Light-emitting device and method for manufacturing the same

Abstract

To provide a light-emitting device that can achieve high efficiency. [Solution] According to the embodiment, the light-emitting device includes a first electrode, a second electrode, and a first structure. At least a portion of the first structure is provided between the first electrode and the second electrode. The first structure includes a light-emitting layer along a first plane, an optical member, and a laminate. The light-emitting layer is located between the first electrode and the second electrode in a first direction intersecting the first plane. The optical member is provided between the light-emitting layer and the second electrode. The laminate is provided between the optical member and the second electrode. The optical member includes a plurality of first regions aligned along the first plane and a second region including a first partial region between the plurality of first regions. The refractive indices of the plurality of first regions are different from those of the second regions. The laminate includes a plurality of first layers and a plurality of second layers. The materials of the plurality of second layers are different from those of the plurality of first layers.

Description

[Technical Field]

[0001] Embodiments of the present invention relate to a light-emitting device and a method for manufacturing the same. [Background technology]

[0002] For example, in light-emitting devices such as lasers, improved efficiency is desired. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-141014 [Overview of the project] [Problems that the invention aims to solve]

[0004] The embodiment provides a light-emitting device that can achieve high efficiency and a method for manufacturing the same. [Means for solving the problem]

[0005] According to one embodiment, the light-emitting device includes a first electrode, a second electrode, and a first structure. At least a portion of the first structure is provided between the first electrode and the second electrode. The first structure includes a light-emitting layer along a first plane, an optical member, and a laminate. The light-emitting layer is located between the first electrode and the second electrode in a first direction intersecting the first plane. The optical member is provided between the light-emitting layer and the second electrode. The laminate is provided between the optical member and the second electrode. The optical member includes a plurality of first regions aligned along the first plane and a second region including a first partial region between the plurality of first regions. The refractive index of the plurality of first regions is different from the refractive index of the second region of the second region. The laminate includes a plurality of first layers and a plurality of second layers. One of the plurality of first layers is located between one of the plurality of second layers and another of the plurality of second layers. One of the plurality of second layers lies between one of the plurality of first layers and another of the plurality of first layers. The second material of the plurality of second layers is different from the first material of the plurality of first layers. [Brief explanation of the drawing]

[0006] [Figure 1] Figure 1 is a schematic cross-sectional view illustrating a light-emitting device according to the first embodiment. [Figure 2] Figure 2 is a schematic cross-sectional view illustrating a part of the light-emitting device according to the first embodiment. [Figure 3] Figure 3 is a schematic cross-sectional view illustrating a part of the light-emitting device according to the first embodiment. [Figure 4] Figures 4(a) to 4(c) are schematic cross-sectional views illustrating a method for manufacturing a light-emitting device according to the second embodiment. [Figure 5] Figures 5(a) to 5(c) are schematic cross-sectional views illustrating a method for manufacturing a light-emitting device according to the second embodiment. [Modes for carrying out the invention]

[0007] The embodiments of the present invention will be described below with reference to the drawings. The drawings are schematic or conceptual, and the relationships between the thickness and width of each part, the size ratios between parts, etc. are not necessarily the same as those in reality. Even when representing the same part, the dimensions and ratios may be shown differently in the drawings. In this specification and each figure, the same reference numerals are assigned to elements similar to those described above with respect to the previously shown figures, and detailed descriptions are omitted as appropriate.

[0008] (First Embodiment) FIG. 1 is a schematic cross-sectional view illustrating a light-emitting device according to the first embodiment. FIG. 2 is a schematic cross-sectional view illustrating a part of the light-emitting device according to the first embodiment. As shown in FIG. 1, the light-emitting device 110 according to the embodiment includes a first electrode 51, a second electrode 52, and a first structure 15.

[0009] At least a part of the first structure 15 is provided between the first electrode 51 and the second electrode 52. It includes a light-emitting layer 10 along the first plane PL1, an optical member 20, and a laminate 40. The light-emitting layer 10 is between the first electrode 51 and the second electrode 52 in a first direction D1 that intersects the first plane PL1.

[0010] The first direction D1 is taken as the Z-axis direction. One direction perpendicular to the Z-axis direction is taken as the X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is taken as the Y-axis direction. The first plane PL1 is along, for example, the X-Y plane.

[0011] The optical member 20 is provided between the light-emitting layer 10 and the second electrode 52. The laminate 40 is provided between the optical member 20 and the second electrode 52.

[0012] The optical element 20 includes a plurality of first regions 21 and a second region 22. The plurality of first regions 21 are arranged along a first plane PL1. For example, the direction from one of the plurality of first regions 21 to another may be along a second direction D2 along the first plane PL1. For example, the direction from one of the plurality of first regions 21 to another may be along a third direction D3 along the first plane PL1. The third direction D3 intersects the plane containing the first direction D1 and the second direction D2. The plurality of first regions 21 may be arranged two-dimensionally along the first plane PL1.

[0013] As shown in Figure 2, the second region 22 includes the first subregion 22a. The first subregion 22a lies between a plurality of first regions 21. In the example in Figure 2, the second region 22 further includes the second subregion 22b. The plurality of first regions 21 are located between the light-emitting layer 10 and the second subregion 22b.

[0014] The refractive indices of multiple first regions 21 (first region refractive indices) differ from the refractive indices of the second region 22 (second region refractive indices). The difference in refraction changes the direction of light propagation. In one embodiment, the second region 22 may be a region containing at least one selected from the group consisting of gases, semiconductors, and dielectrics. The gas may include, for example, at least one selected from the group consisting of air and hydrogen. The second region 22 may include a reduced pressure region.

[0015] The laminate 40 includes a plurality of first layers 41 and a plurality of second layers 42. One of the plurality of first layers 41 lies between one of the plurality of second layers 42 and another of the plurality of second layers 42. One of the plurality of second layers 42 lies between one of the plurality of first layers 41 and another of the plurality of first layers 41. For example, the first layers 41 and second layers 42 may be arranged alternately along a first direction D1. The material of the plurality of second layers 42 (second material) is different from the material of the plurality of first layers 41 (first material).

[0016] At least a portion of the light emitted from the light-emitting layer 10 is spread along the first plane PL1 by the optical member 20. The light passes through the laminate 40 and is reflected by the second electrode 52. The light reflected by the second electrode 52 passes through the laminate 40, the optical member 20 and the light-emitting layer 10. The light 81 is emitted to the outside (see Figure 1).

[0017] Light 81 travels back and forth between the optical member 20 and the laminate 40. If the back and forth optical path length is inappropriate, the light reflected by the second electrode 52 is attenuated. If the optical path length is appropriate, attenuation is suppressed. For example, the light 81 reinforces each other. The laminate 40 has a function to appropriately control the optical path length. Since the laminate 40 includes a plurality of first layers 41 and a plurality of second layers 42, the thickness of the laminate 40 can be controlled with high precision in units of the thickness of one of these layers. According to the embodiment, an appropriate optical path length can be obtained. According to the embodiment, a light-emitting device that can achieve high efficiency can be provided.

[0018] As described later, a laminated film consisting of multiple first layers 41 and multiple second layers 42 may be formed, and a laminated body 40 may be obtained by removing a portion of the laminated film. The removal may be performed on a unit of either the first layer 41 or the second layer 42. High-precision thickness control is achieved. By using a material for the second layer 42 (second material) that is different from the material for the first layer 41 (first material), the first layer 41 or the second layer 42 can be removed with high efficiency. High-precision thickness control is achieved.

[0019] As shown in Figure 1, the light-emitting device 110 may further include a first semiconductor layer 31. The first semiconductor layer 31 includes a first surface F1 and a first intermediate surface Fm1. The first surface F1 is located between the first electrode 51 and the light-emitting layer 10. The first intermediate surface Fm1 is located between the first surface F1 and the light-emitting layer 10. In the example in Figure 1, the first surface F1 is the bottom surface.

[0020] Light 81 emitted from the light-emitting layer 10 passes through the optical member 20 and the laminate 40 and is reflected by the second electrode 52. The reflected light 81 is configured to pass through the laminate 40, the optical member 20 and the light-emitting layer 10 and be emitted from the first surface F1. Light 81 passes through the first semiconductor layer 31 and is emitted from the first surface F1.

[0021] In this example, the first semiconductor layer 31 includes a substrate 31s and a first semiconductor region 31c. The first semiconductor region 31c is located between the substrate 31s and the light-emitting layer 10. The first semiconductor region 31c may function, for example, as a first cladding layer.

[0022] As already explained, the optical component 20 may include a second partial region 22b (see Figure 2). The second partial region 22b may be in contact with the laminate 40. At least a portion of the second partial region 22b may function as a second cladding layer.

[0023] In this embodiment, the first structure 15 is a laser. The light 81 has substantially one peak wavelength. For example, the light 81 has a first peak wavelength and no second peak wavelength. Or, the light 81 has a first peak wavelength and a second peak wavelength, and the intensity at the second peak wavelength is 1 / 10 or less of the intensity at the first peak wavelength. The phases of the light 81 are aligned.

[0024] The first structure 15 may be, for example, a quantum cascade laser. High-efficiency light 81 can be obtained. The light-emitting layer 10 may be configured to emit light by, for example, inter-subband transitions.

[0025] The optical member 20, which includes multiple first regions 21, functions, for example, as a photonic crystal. The first structure 15 may be, for example, a surface-emitting quantum cascade laser.

[0026] As shown in Figure 1, the first semiconductor layer 31 may include a first portion 31p and a second portion 31q. The direction from the first portion 31p to the second portion 31q intersects with the first direction D1. The light-emitting layer 10 is located between the first portion 31p and the optical member 20 in the first direction D1. The light-emitting layer 10 does not overlap with the second portion 31q in the first direction D1. The first structure 15 includes a mesa region. The light-emitting layer 10 and the optical member 20 may be included in the mesa region. At least a portion of the first portion 31p may be included in the mesa region.

[0027] As shown in FIG. 1, the first structure 15 may include a second semiconductor layer 32. The second semiconductor layer 32 is between the first semiconductor layer 31 and the light-emitting layer 10.

[0028] As shown in FIG. 2, the optical member 20 may further include a third region 23. The third region 23 is between the light-emitting layer 10 and the first partial region 22a. The refractive index of the third region 23 is different from the refractive index of the second region 22. The refractive index of the third region 23 may be substantially the same as the refractive indices of the plurality of first regions 21. The material of the third region 23 may be substantially the same as the materials of the plurality of first regions 21. The plurality of first regions 21 may be continuous with the third region 23.

[0029] As shown in FIG. 1, the light-emitting layer 10 includes a plurality of first compound layers 11 and a plurality of second compound layers 12. One of the plurality of first compound layers 11 is between one of the plurality of second compound layers 12 and another one of the plurality of second compound layers 12. One of the plurality of second compound layers 12 is between one of the plurality of first compound layers 11 and another one of the plurality of first compound layers 11. The first compound layer 11 and the second compound layer 12 may be arranged alternately along the first direction D1.

[0030] In one example, the plurality of first compound layers 11 include In z1 Ga 1-z1 As (0 < z1 < 1). The plurality of second compound layers 12 include In z2 Al 1-z2 As (0 < z2 < 1). In one example, the wavelength of the light 81 emitted from the light-emitting layer 10 may be 2 μm or more and 20 μm or less. The light-emitting device 110 may be applied to, for example, the analysis or detection of a gas or the like. For example, when the detection target is carbon dioxide gas, the wavelength may be, for example, 3 μm or more and 5 μm or less. For example, when the detection target is methane gas, the wavelength may be, for example, 2 μm or more and 4 μm or less. The wavelength may be set to match the detection target.

[0031] In one example, the plurality of first regions 21 include In x1 Ga 1-x1It includes As(0 < x1 < 1). The second region 22 includes InP. For example, a large refractive index difference can be obtained.

[0032] The substrate 31s may include, for example, InP. The first semiconductor region 31c may include InP. The second semiconductor layer 32 may include, for example, InGaAs.

[0033] In the laminate 40, the plurality of first layers 41 include, for example, In y1 Ga 1-y1 As(0 < y1 < 1). The plurality of second layers 42 include, for example, InP. A highly homogeneous film is easily obtained. In these layers, a large difference in etching rate is easily obtained. The target layer can be removed with high efficiency.

[0034] As shown in FIG. 2, one first thickness t1 of the plurality of first layers 41 may be, for example, 2 nm or more and less than 30 nm. One second thickness t2 of the plurality of second layers 42 may be 2 nm or more and less than 30 nm. By each of these thicknesses being less than 30 nm, for example, the optical path length of the laminate 40 can be easily controlled with an accuracy of 1 / 10 or less of the wavelength. Thereby, the optical path length can be controlled with high accuracy compared to the wavelength. High-efficiency light 81 is obtained. These thicknesses are lengths along the first direction D1. The optical path length corresponds to the product of the thickness of the laminate 40 (laminate thickness t4) and the refractive index in the laminate 40.

[0035] One of the plurality of first layers 41 or one of the plurality of second layers 42 may function as an etching stopper. By these thicknesses being 2 nm or more, good in-plane uniformity is easily obtained. For example, the function of the etching stopper can be stably obtained. By each of these thicknesses being less than 30 nm, lattice distortion is easily suppressed. For example, dislocations are suppressed.

[0036] As shown in FIG. 2, let the distance along the first direction D1 between the light-emitting layer 10 and the second electrode 52 be the first distance d1. The average refractive index in the region between the light-emitting layer 10 and the second electrode 52 is the average refractive index n aLet the wavelength of the light emitted from the light-emitting layer 10 be wavelength λ. The first distance d1 is λ / (4n a It can be an odd multiple of ) for example, the average refractive index n a The wavelength λ and the first distance d1 may satisfy the first condition. In the first condition, the first distance d1 is λ / (4n a The first distance d1 is at least (2m-1.1) times and less than or equal to (2m-0.9) times the average refractive index n, where "m" is an integer greater than or equal to 1. Such a first distance d1 can effectively suppress losses due to interference, for example. In one example, the average refractive index n a For example, it is acceptable for it to be between 2.5 and 3.6. In one example, the average refractive index n a For example, it is between 2.8 and 3.4. Average refractive index n a For example, a value between 3.1 and 3.4 is also acceptable.

[0037] As shown in Figure 2, the optical element 20 includes a second surface F2 that faces the laminate 40. In the example in Figure 2, the second surface F2 is in contact with the laminate 40.

[0038] As shown in Figure 1, the light-emitting device 110 may further include a reflective member 55. The light-emitting layer 10 includes a light-emitting layer side surface 10s that intersects with the first plane PL1. At least a portion of the reflective member 55 faces the light-emitting layer side surface 10s. The optical member 20 includes an optical member side surface 20s that intersects with the first plane PL1. A portion of the reflective member 55 faces the optical member side surface 20s. The reflective member 55 extracts the light 81 emitted from the light-emitting layer 10 to the outside with high efficiency. The reflective member 55 may be continuous with the second electrode 52.

[0039] The light-emitting device 110 may further include an insulating member 30i. At least a portion of the insulating member 30i is provided between the light-emitting layer 10 and the reflective member 55. A portion of the insulating member 30i is provided between the optical member 20 and the reflective member 55.

[0040] Figure 3 is a schematic cross-sectional view illustrating a part of the light-emitting device according to the first embodiment. As shown in Figure 3, in the light-emitting device 111 according to this embodiment, the configuration of the optical member 20 is different from that of the light-emitting device 110. The rest of the configuration of the light-emitting device 111 may be the same as that of the light-emitting device 111.

[0041] In the light-emitting device 111, the optical member 20 includes a second surface F2 facing the laminate 40. The second surface F2 includes a recess 20d. The second surface F2 includes irregularities. At least a portion of the laminate 40 lies between a portion of the optical member 20 and another portion of the optical member 20 in a second direction D2 along the first plane PL1. At least a portion of the laminate 40 may be provided in the recess 20d.

[0042] For example, the irregularities of the second surface F2 may be based on a plurality of first regions 21. The irregularities of the second surface F2 may correspond to a plurality of first regions 21. The recesses 20d of the second surface F2 may correspond to the first partial region 22a of the second region 22. The position of the recess 20d in the second direction D2 may reflect the position of the first partial region 22a in the second direction D2. For example, the recess 20d overlaps with the first partial region 22a in the first direction D1. Even when such a recess 20d exists, a part of the laminate 40 may be filled into the recess 20d. A homogeneous film is obtained.

[0043] The laminate 40 may include a third surface F3 facing the second electrode 52. The third surface F3 may include a third surface recess 40d. The third surface recess 40d may overlap with the recess 20d of the second surface F2 in the first direction D1.

[0044] (Second Embodiment) Figures 4(a) to 4(c) and 5(a) to 5(c) are schematic cross-sectional views illustrating a method for manufacturing a light-emitting device according to the second embodiment. As shown in Figure 4(a), the processed body 15f includes a first semiconductor layer 31, an emissive layer 10, and a first processed layer 21f. The first processed layer 21f is at least a part of a plurality of first regions 21. The emissive layer 10 is provided between the first semiconductor layer 31 and the first processed layer 21f. In this example, a second semiconductor layer 32 is provided between the first semiconductor layer 31 and the emissive layer 10.

[0045] As shown in Figure 4(b), a portion of the first processed layer 21f is removed. This forms multiple first regions 21. For example, dry etching may be performed during the processing.

[0046] As shown in Figure 4(c), a second region 22 is formed between a plurality of first regions 21. The second region 22 may cover the plurality of first regions 21. This gives an optical member 20. A laminated body 40f is formed on the optical member 20. The laminated body 40f includes a plurality of first layers 41 and a plurality of second layers 42.

[0047] Thus, the manufacturing method according to the embodiment includes forming a laminated processed body 40f on a processed body 15f. The processed body 15f includes an emissive layer 10 along a first plane PL1 and an optical member 20 provided on the emissive layer 10. The laminated processed body 40f includes a plurality of first layers 41 and a plurality of second layers 42. One of the plurality of first layers 41 lies between one of the plurality of second layers 42 and another of the plurality of second layers 42. One of the plurality of second layers 42 lies between one of the plurality of first layers 41 and another of the plurality of first layers 41. The first layers 41 and the second layers 42 may be arranged alternately. The second material of the second layer 42 is different from the first material of the first layer 41.

[0048] As shown in Figure 5(a), at least a portion of the laminated body 40f is removed. Removing at least a portion of the laminated body 40f includes removing at least one of the plurality of first layers 41 and at least one of the plurality of second layers 42. By removing at least one of these layers, the thickness of the laminated body 40f can be controlled with high precision. By removing at least a portion of the laminated body 40f, a laminate 40 is obtained.

[0049] As shown in Figure 5(b), in this example, a portion of the processed body 15f is removed, forming a mesa region. Insulating members 30i are formed on the side and top surfaces of the mesa region.

[0050] As shown in Figure 5(c), a portion of the insulating member 30i is removed. This exposes at least a portion of the laminate 40 (laminated processed body 40f). An electrode 50E is formed on the laminate 40f (laminated body 40) that remains after the removal. Substantially all of the laminate 40f may be removed. In this case, the optical member 20 is exposed by the removal. An electrode 50E may be formed on the optical member 20 that is exposed by the removal. The electrode 50E corresponds to, for example, a second electrode 52. A first electrode 51 may be formed on the first surface F1 of the first semiconductor layer 31.

[0051] Thus, the electrode 50E may be formed on the laminated body 40f remaining after the removal of at least a portion of the laminated body 40f, or on the optical member 20 exposed by the removal.

[0052] In this embodiment, the etching rate of the multiple second layers 42 to the first etchant may be higher than the etching rate of the multiple first layers 41 to the first etchant. For example, the first layer 41 can be removed with high efficiency. The etching rate of the multiple first layers 41 to the second etchant may be higher than the etching rate of the multiple second layers 42 to the second etchant. For example, the second layer 42 can be removed with high efficiency. The ratio of etching rates may be, for example, 10 or more. The ratio may be 50 or more.

[0053] In one embodiment, for example, the removal of at least a portion of the laminated body 40f is performed to reduce the average refractive index n between the light-emitting layer 10 and the electrode 50E. a The first condition may include that the first distance d1 between the light-emitting layer 10 and the electrode 50E (see Figure 5(c)) and the wavelength λ of the light emitted from the light-emitting layer 10 satisfy the first condition. In the first condition, the first distance d1 is λ / (4n a The value is at least (2m-1.1) times and at least (2m-0.9) times the value, where "m" is an integer greater than or equal to 1.

[0054] In the embodiment, the first thickness t1 of one of the multiple first layers 41 may be, for example, 2 nm or more and less than 30 nm. The second thickness t2 of one of the multiple second layers 42 may be, for example, 2 nm or more and less than 30 nm.

[0055] The embodiments may include the following technical proposals. (Technical proposal 1) First electrode and, The second electrode and, A first structure, wherein at least a part of the first structure is provided between the first electrode and the second electrode, Equipped with, The first structure is, A light-emitting layer along the first plane, Optical components and Laminate and Includes, The light-emitting layer is located between the first electrode and the second electrode in a first direction intersecting the first plane, The optical member is provided between the light-emitting layer and the second electrode, The laminate is provided between the optical member and the second electrode, The optical component is A plurality of first regions arranged along the first plane, A second region including a first subregion between the plurality of first regions, Includes, The refractive index of the first region of the plurality of first regions differs from the refractive index of the second region of the second region. The laminate includes a plurality of first layers and a plurality of second layers. One of the plurality of first layers is located between one of the plurality of second layers and another of the plurality of second layers. One of the plurality of second layers is located between one of the plurality of first layers and another of the plurality of first layers. A light-emitting device wherein the second material of the plurality of second layers is different from the first material of the plurality of first layers.

[0056] (Technical proposal 2) The thickness of one of the plurality of first layers is 2 nm or more and less than 30 nm. The light-emitting device according to Technical Proposal 1, wherein the thickness of one of the plurality of second layers is 2 nm or more and less than 30 nm.

[0057] (Technical proposal 3) The average refractive index n between the light-emitting layer and the second electrode a The wavelength λ of the light emitted from the light-emitting layer and the first distance between the light-emitting layer and the second electrode satisfy the first condition. In the first condition above, the first distance is λ / (4n a ) is more than (2m-1.1) times and less than or equal to (2m-0.9) times, The light-emitting device according to Technical Proposal 1 or 2, wherein m is an integer of 1 or more.

[0058] (Technical proposal 4) The aforementioned second region further includes a second subregion, The plurality of first regions are located between the light-emitting layer and the second partial region, as described in any one of Technical Proposals 1 to 3.

[0059] (Technical proposal 5) The second partial region is in contact with the laminate, and is the light-emitting device according to Technical Proposal 4.

[0060] (Technical proposal 6) The first semiconductor layer further comprises a first surface and a first intermediate surface, The aforementioned first surface is located between the aforementioned first electrode and the light-emitting layer. The first intermediate surface is located between the first surface and the light-emitting layer. A light-emitting device according to Technical Proposal 1 or 2, wherein light emitted from the light-emitting layer passes through the optical member and the laminate and is reflected by the second electrode, and the reflected light passes through the laminate, the optical member and the light-emitting layer and is emitted from the first surface.

[0061] (Technical proposal 7) The first semiconductor layer includes a substrate and a first semiconductor region. The first semiconductor region is located between the substrate and the light-emitting layer, and is the light-emitting device according to Technical Proposal 6.

[0062] (Technical Proposal 8) The first semiconductor layer includes a first portion and a second portion. The direction from the first portion to the second portion intersects the first direction. The light-emitting layer is located between the first portion and the optical member in the first direction. The light-emitting layer does not overlap with the second portion in the first direction, and is the light-emitting device according to Technical Proposal 6 or 7.

[0063] (Technical Proposal 9) The light-emitting layer is configured to emit light by intersubband transitions, and is the light-emitting device according to any one of Technical Proposals 1 to 8.

[0064] (Technical Proposal 10) The plurality of first layers contain In y1 Ga 1-y1 As (0 < y1 < 1). The plurality of second layers contain InP, and is the light-emitting device according to any one of Technical Proposals 1 to 9.

[0065] (Technical Proposal 11) The light-emitting layer includes a plurality of first compound layers and a plurality of second compound layers. One of the plurality of first compound layers is located between one of the plurality of second compound layers and another one of the plurality of second compound layers. The one of the plurality of second compound layers is located between the one of the plurality of first compound layers and another one of the plurality of first compound layers. The plurality of first compound layers contain In z1 Ga 1-z1 As (0 < z1 < 1). The plurality of second compound layers contain In z2 Al 1-z2 As (0 < z2 < 1), and is the light-emitting device according to any one of Technical Proposals 1 to 10.

[0066] (Technical Proposal 12) The plurality of first regions contain In x1 Ga 1-x1 As (0 < x1 < 1), and the second region contains InP, a light-emitting device according to any one of Technical Solutions 1 to 11.

[0067] (Technical Solution 13) The optical member includes a second surface facing the laminate, the second surface includes a recess, at least a part of the laminate is between a part of the optical member and another part of the optical member in a second direction along the first plane, a light-emitting device according to any one of Technical Solutions 1 to 12.

[0068] (Technical Solution 14) The recess overlaps with the first partial region in the first direction, a light-emitting device according to Technical Solution 13.

[0069] (Technical Solution 15) Further comprising a reflective member, the light-emitting layer includes a light-emitting layer side surface intersecting the first plane, at least a part of the reflective member faces the light-emitting layer side surface, a light-emitting device according to any one of Technical Solutions 1 to 14.

[0070] (Technical Solution 16) The first structure is a surface-emitting quantum cascade laser, a light-emitting device according to any one of Technical Solutions 1 to 15. <​​​​​A laminated processed body is formed on a processed body including a light-emitting layer along a first plane and an optical member provided on the light-emitting layer, the laminated processed body includes a plurality of first layers and a plurality of second layers, one of the plurality of first layers is between one of the plurality of second layers and another of the plurality of second layers, one of the plurality of second layers is between one of the plurality of first layers and another of the plurality of first layers, and the second material of the second layer is different from the first material of the first layer, Remove at least a portion of the laminated body, A method for manufacturing a light-emitting device, comprising forming electrodes on the laminated body remaining after the removal, or on the optical member exposed by the removal.

[0072] (Technical proposal 18) The removal of at least a portion of the laminated body is due to the average refractive index n between the light-emitting layer and the electrode. a This includes the first distance between the light-emitting layer and the electrode, and the wavelength λ of the light emitted from the light-emitting layer, satisfying the first condition. In the first condition above, the first distance is λ / (4n a ) is more than (2m-1.1) times and less than or equal to (2m-0.9) times, The method for manufacturing a light-emitting device according to Technical Proposal 17, wherein m is an integer of 1 or more.

[0073] (Technical proposal 19) A method for manufacturing a light-emitting device according to proposal 17 or 18, wherein the removal of at least a portion of the laminated workpiece includes removing at least one of the plurality of first layers and at least one of the plurality of second layers.

[0074] (Technical proposal 20) The thickness of one of the plurality of first layers is 2 nm or more and less than 30 nm. A method for manufacturing a light-emitting device according to any one of Technical Proposals 17 to 19, wherein the thickness of one of the plurality of second layers is 2 nm or more and less than 30 nm.

[0075] According to the embodiment, a light-emitting device that can achieve high efficiency and a method for manufacturing the same are provided.

[0076] In this specification, "perpendicular" and "parallel" do not mean strictly perpendicular and strictly parallel, but also include variations in the manufacturing process, for example, and it is sufficient if they are substantially perpendicular and substantially parallel.

[0077] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element included in the light-emitting device, such as electrodes, laminates, light-emitting layers, optical members, and semiconductor layers, is included within the scope of the present invention as long as it can be implemented in the same way and similar effects can be obtained by appropriately selecting from the range known to those skilled in the art.

[0078] Furthermore, combinations of two or more elements from any of the specific examples, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the invention.

[0079] Furthermore, all light-emitting devices that can be implemented by those skilled in the art by appropriately modifying the design based on the light-emitting device described above as an embodiment of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.

[0080] Furthermore, within the scope of the concept of the present invention, a person skilled in the art could conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of the present invention.

[0081] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of symbols]

[0082] 10: Light-emitting layer, 10s: Side surface of light-emitting layer, 11, 12: First and second compound layers, 15: First structure, 15f: Processed body, 20: Optical component, 20d: Recess, 20s: Side surface of optical component, 21-23: First to third regions, 21f: First processed layer, 22a, 22b: First and second partial regions, 30i: Insulating component, 31, 32: First and second semiconductor layers, 31c: First semiconductor region, 31p, 31q: First and second parts, 31s: Substrate, 40: Laminate, 40d: Third surface recess, 40f: Laminate processed body, 41, 42: First and second layers, 50E: Electrode, 51, 52: First and second electrodes, 55: Reflective component, 81: Light, 110, 111: Light-emitting device, D1~D3: 1st~3rd directions, F1~F3: 1st~3rd surfaces, Fm1: 1st intermediate surface, PL1: 1st plane, d1: 1st distance, t1, t2: 1st and 2nd thicknesses, t4: Laminate thickness

Claims

1. First electrode and, The second electrode and A first structure, wherein at least a part of the first structure is provided between the first electrode and the second electrode, Equipped with, The first structure is, A light-emitting layer along the first plane, Optical components and Laminate and Includes, The light-emitting layer is located between the first electrode and the second electrode in a first direction intersecting the first plane, The optical member is provided between the light-emitting layer and the second electrode, The laminate is provided between the optical member and the second electrode, The optical component is A plurality of first regions arranged along the first plane, A second region including a first subregion between the plurality of first regions, Includes, The refractive index of the first region of the plurality of first regions differs from the refractive index of the second region of the second region. The laminate includes a plurality of first layers and a plurality of second layers. One of the plurality of first layers is located between one of the plurality of second layers and another of the plurality of second layers. One of the plurality of second layers is located between one of the plurality of first layers and another of the plurality of first layers. A light-emitting device wherein the second material of the plurality of second layers is different from the first material of the plurality of first layers.

2. The thickness of one of the plurality of first layers is 2 nm or more and less than 30 nm. The light-emitting apparatus according to claim 1, wherein the thickness of one of the plurality of second layers is 2 nm or more and less than 30 nm.

3. The average refractive index n between the light-emitting layer and the second electrode ａ The wavelength λ of the light emitted from the light-emitting layer and the first distance between the light-emitting layer and the second electrode satisfy the first condition. In the first condition, the first distance is λ / (4n ａ ) is more than (2m - 1.1) times and less than or equal to (2m - 0.9) times, The light-emitting device according to claim 1 or 2, wherein m is an integer of 1 or more.

4. The first semiconductor layer further comprises a first surface and a first intermediate surface, The first surface described above is located between the first electrode described above and the light-emitting layer. The first intermediate surface is located between the first surface and the light-emitting layer. The light-emitting device according to claim 1 or 2, wherein the light emitted from the light-emitting layer passes through the optical member and the laminate and is reflected by the second electrode, and the reflected light passes through the laminate, the optical member and the light-emitting layer and is emitted from the first surface.

5. The light-emitting device according to claim 1 or 2, wherein the light-emitting layer is configured to emit light by inter-subband transitions.

6. The optical member includes a second surface facing the laminate, The second surface includes a recess, The light-emitting device according to claim 1 or 2, wherein at least a portion of the laminate is located between a portion of the optical member and another portion of the optical member in a second direction along the first plane.

7. A method for manufacturing a light-emitting device, A laminated processed body is formed on a processed body including a light-emitting layer along a first plane and an optical member provided on the light-emitting layer, the laminated processed body includes a plurality of first layers and a plurality of second layers, one of the plurality of first layers is between one of the plurality of second layers and another of the plurality of second layers, one of the plurality of second layers is between one of the plurality of first layers and another of the plurality of first layers, and the second material of the second layer is different from the first material of the first layer, Remove at least a portion of the laminated body, A method for manufacturing a light-emitting device, comprising forming electrodes on the laminated body remaining after the removal, or on the optical member exposed by the removal.

8. The removal of at least a portion of the laminated body is due to the average refractive index n between the light-emitting layer and the electrode. ａ This includes the first distance between the light-emitting layer and the electrode, and the wavelength λ of the light emitted from the light-emitting layer, satisfying the first condition. In the first condition, the first distance is λ / (4n ａ ) is greater than or equal to (2m - 1.1 times) and less than or equal to (2m - 0.9 times), The method for manufacturing a light-emitting device according to claim 7, wherein m is an integer of 1 or more.

9. The method for manufacturing a light-emitting device according to claim 7 or 8, wherein the removal of at least a portion of the laminated body includes removing at least one of the plurality of first layers and at least one of the plurality of second layers.

10. The thickness of one of the plurality of first layers is 2 nm or more and less than 30 nm. The method for manufacturing a light-emitting device according to claim 7 or 8, wherein the thickness of one of the plurality of second layers is 2 nm or more and less than 30 nm.

Images