Ferroelectric structure and method for manufacturing the same, intrinsic random number generator applying the same, solar cell applying the same, and non-volatile RF switch applying the same.

Abstract

The present invention provides a ferroelectric structure containing a two-dimensional ferroelectric material that can realize an intrinsic random number generator using a single element, and a method for manufacturing the same. [Solution] The method for operating a ferroelectric structure includes the steps of: preparing a ferroelectric structure including a substrate 100, a lower electrode 200 placed on the substrate, a ferroelectric layer 300 placed on the lower electrode and containing a two-dimensional ferroelectric material, and an upper electrode 400 placed on the ferroelectric layer; applying an operating voltage to the ferroelectric structure so that polarization occurs in the ferroelectric layer; applying a readout voltage to the ferroelectric structure to obtain a current value that reflects the polarization state of the ferroelectric layer; and applying a removal voltage to the ferroelectric structure so that the ferroelectric layer returns to the state before polarization occurs.

Description

[Technical Field]

[0001] The present invention relates to a ferroelectric structure and a method for manufacturing the same, and more specifically, to an upper electrode and a lower electrode. This invention relates to a ferroelectric structure having a structure in which a ferroelectric layer is arranged between electrodes, and to a method for manufacturing the same.

[0002] The ferroelectric structure and method for manufacturing the same according to the present invention are true random number generators. It is applicable to generators, solar cells, and non-volatile RF switches. [Background technology]

[0003] The rapid growth of the Internet of Things (IoT) has led to a massive amount of data Data is generated and exchanged. This ensures data security, especially confidentiality. The risks to integrity and authentication are also increasing. However, due to the proliferation of IoT devices, there is no unified security standard. IoT devices like these are vulnerable to attacks, raising serious security concerns.

[0004] Encryption keys have traditionally been used to protect data, but machine learning (machine l Earning (ML) and physical attacks are becoming increasingly vulnerable. To solve these problems, Random number generators (RNGs) are attracting attention.

[0005] More specifically, regarding random number generators, a pseudo-random number generator based on CMOS elements (Pseudo Random Number Generator) It uses an NDOM Number Generator (PRNG) model. However, it is based on existing CMOS. Random number generator models have complex circuit structures and are not perfect random numbers, but rather complex in order to mimic randomness. It has limitations because it is a system implemented by algorithms. This is because of the enormous amount of data There are limitations to directly applying this to the IoT industry where problems occur, and the complex algorithmic structure If it's even possible to analyze it, it has a critical flaw that allows for hacking of the encryption. It is.

[0006] As mentioned earlier, we extended the initial seed to a bit sequence using a mathematical algorithm. Unlike software-based RNGs (Pseudo Random Number Generators, PRNGs), A True Random Number Generator (TRNG) is a generator that produces random and unpredictable numbers. By utilizing the physical attributes of the software system, statistically independent bits are generated. True random number generators are currently a major candidate for application in data encryption technologies, which involve generating data on a massive scale. This is a complementary group and requires in-depth research.

[0007] For example, Z. Wei; Y. Katoh; S. Ogasahara; Y. Yoshimoto; K. Kawai; Y. Ikeda; K. E riguchi; K. Ohmori; S. Yoneda, “True random number generator using current diff erence based on a fractional stochastic model in 40-nm embedded ReRAM”, 2016 I At the EEE International Electron Devices Meeting (IEDM) in 2016, resistive switching materials were presented. An intrinsic random number generator using tantalum oxide (Ta2O5) has been disclosed.

[0008] Also, for example, Bo Liu; Jing Ma; Han Hsiang Tai; Dharmendra Verma; Mamina Sahoo; Ying-Feng Chang; Hanyuan Liang; Shiwei Feng; Lain-Jong Li; Tuo-Hung Hou; Cha o-Sung Lai, “Memristive True Random Number Generator with Intrinsic Two-Dimen sional Physical Unclonable Function”, ACS Appl. Electron. Mater., 2023, 5, 2, 714 - 720 discloses a true random number generator using aluminum oxide (AlO x ) as a resistive change material. is disclosed.

Prior Art Documents

Non-Patent Documents

[0009]

Non-Patent Document 1

Non-Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0010] An object of the present invention is to provide a ferroelectric structure including a two-dimensional ferroelectric material and a method for manufacturing the same. That is what it is.

[0011] Another object of the present invention is to provide a ferroelectric structure and a method for manufacturing the same, in which a current value of random intensity can be obtained for the same applied voltage. That is what it is.

[0012] Still another object of the present invention is to provide a ferroelectric structure and a method for manufacturing the same, which embody a true random number generator (TRNG) with a single element. That is what it is.

[0013] Still another object of the present invention is to provide a method for deriving an ideal operating voltage and a readout voltage so that the ferroelectric structure has ideal random number generation performance. That is what it is.

[0014] Still another object of the present invention is to provide a ferroelectric structure that is easily applicable to data encryption and encryption key generation for data security. That is what it is.

[0015] Another object of the present invention is a simulation using random sampling of repeated data. The objective is to provide a ferroelectric structure that can be easily applied to data generation.

[0016] Another object of the present invention is to provide a solar cell to which the aforementioned ferroelectric material is applied. ru.

[0017] Another object of the present invention is to provide a non-volatile RF switch to which the aforementioned ferroelectric material is applied. It is about doing it.

[0018] The object of the present invention is not limited to what has been stated above. [Means for solving the problem]

[0019] To achieve the above objective, the present invention provides a ferroelectric structure. The ferroelectric structure is A substrate, a lower electrode placed on the substrate, and a molybdenum disulfide placed on the lower electrode. It includes a ferroelectric layer containing s(MoS2) and an upper electrode disposed on the ferroelectric layer, and is applied A key feature is that, for the same voltage, current values ​​of random intensity can be obtained.

[0020] When the same voltage is applied multiple times to the ferroelectric structure, each applied voltage For each of these, current values ​​of different intensities are generated.

[0021] When a voltage is applied to the ferroelectric structure, polarization occurs in the ferroelectric layer. To grow.

[0022] The ferroelectric structure, due to the polarization generated in the ferroelectric layer, responds to the same applied voltage. Then, random current values ​​are obtained.

[0023] The aforementioned ferroelectric structure is applied to a true random number generator.

[0024] According to another embodiment, the ferroelectric structure comprises a substrate and a lower electric field disposed on the substrate. An electrode, a ferroelectric layer disposed on the lower electrode and containing a two-dimensional ferroelectric material, and the ferroelectric layer Including an upper electrode positioned above, the current values ​​of random intensity are applied to the same voltage. It is characterized by the fact that it can be obtained.

[0025] When the same voltage is applied multiple times to the ferroelectric structure, each applied voltage For each of these, current values ​​of different intensities are generated.

[0026] When a voltage is applied to the ferroelectric structure, polarization occurs in the ferroelectric layer.

[0027] When a voltage is applied to the ferroelectric structure, the ferroelectric layer is in the vertical direction (Out-of-plan Polarization occurs towards e, OOP.

[0028] The two-dimensional ferroelectric material contains compounds of different elements, and when a voltage is applied... , one elemental ion of any of the different elements contained in the two-dimensional ferroelectric material, The position changes within the ferroelectric layer.

[0029] The ferroelectric structure is affected by elemental ions whose positions change within the ferroelectric layer. The crystal structure changes.

[0030] The ferroelectric layer changes from a symmetric crystal structure to an anti-symmetric structure. It changes to a crystalline structure.

[0031] The ferroelectric structure described above is applied to an intrinsic random number generator.

[0032] To achieve the aforementioned objectives, the present invention provides a method for manufacturing a ferroelectric structure.

[0033] The method for manufacturing the ferroelectric structure includes the steps of preparing a substrate and placing a lower electrode on the substrate. The steps are to form and to form a ferroelectric layer containing a two-dimensional ferroelectric material on the lower electrode. The method is characterized by including the step of forming an upper electrode on the ferroelectric layer.

[0034] Furthermore, in order to achieve the aforementioned objectives, the present invention provides a method for operating a ferroelectric structure. .

[0035] The operation method of the ferroelectric structure includes a substrate, a lower electrode placed on the substrate, and the lower electrode A ferroelectric layer containing a two-dimensional ferroelectric material is arranged on top of the ferroelectric layer, and is disposed on the ferroelectric layer. The steps include preparing a ferroelectric structure including an upper electrode, and ensuring that polarization occurs in the ferroelectric layer. The steps include applying an operating voltage to the ferroelectric structure and reading the voltage to the ferroelectric structure. The steps include applying a current to obtain a current value that reflects the polarization state of the ferroelectric layer, and the ferroelectric layer The steps include applying a removal voltage to the ferroelectric structure so that the layer returns to its state before polarization occurs, and It is characterized by including.

[0036] The steps of applying the operating voltage, obtaining the current value, and marking the removal voltage The steps are repeated sequentially, and the same operating voltage is applied repeatedly. [Effects of the Invention]

[0037] The ferroelectric structure according to the present invention comprises a substrate, a lower electrode disposed on the substrate, and the lower electrode A ferroelectric layer containing a two-dimensional ferroelectric material is placed on top of the ferroelectric layer, and a It includes a sub-electrode and provides random current values ​​for the same applied voltage.

[0038] As a result, when using the ferroelectric structure according to the present invention, an intrinsic random number generator can be provided as a single element. It can be expressed. Furthermore, the ferroelectric structure can be used for data encryption and encryption for data security. Key generation and simulation data generation using random sampling of iterative data. It can be easily applied to things like this. [Brief explanation of the drawing]

[0039] [Figure 1] Figure 1 is a flowchart illustrating a method for manufacturing a ferroelectric structure according to an embodiment of the present invention. [Figure 2] Figure 2 is a schematic diagram illustrating step S110 of the manufacturing method for a ferroelectric structure according to an embodiment of the present invention. [Figure 3] Figure 3 is a schematic diagram illustrating step S120 of the manufacturing method for a ferroelectric structure according to an embodiment of the present invention. [Figure 4] Figure 4 is a schematic diagram illustrating step S130 of the manufacturing method for a ferroelectric structure according to an embodiment of the present invention. [Figure 5] Figure 5 is a schematic diagram illustrating step S140 of the manufacturing method for a ferroelectric structure according to an embodiment of the present invention. [Figure 6] Figure 6 is a flowchart illustrating the operation method of a ferroelectric structure according to an embodiment of the present invention. [Figure 7] Figure 7 is a diagram illustrating a ferroelectric structure according to a first modified example of the present invention. [Figure 8] Figure 8 is a diagram illustrating a ferroelectric structure according to a second modified example of the present invention. [Figure 9]Figure 9 is a schematic cross-sectional view illustrating a ferroelectric structure according to a third modified example of the present invention. [Figure 10] Figure 10 is a schematic plan view illustrating a ferroelectric structure according to a third modified example of the present invention. [Figure 11] Figure 11 shows a schematic diagram and optical image of a ferroelectric structure based on an experimental example of the present invention. [Figure 12] Figure 12 is a schematic diagram of AFM measurement of the ferroelectric layer of a ferroelectric structure according to an experimental example of the present invention. [Figure 13] Figure 13 is an image showing the thickness and surface roughness of the ferroelectric layer as measured by AFM. [Figure 14] Figure 14 is a schematic diagram of the LGD double well model for the CIPS material used in the ferroelectric layer in an experimental example of the present invention. [Figure 15] Figure 15 is a schematic diagram of the PV relationship of a ferroelectric layer according to an experimental example of the present invention. [Figure 16] Figure 16 illustrates the PFM analysis results of a ferroelectric structure in an experimental example of the present invention when no voltage is applied. [Figure 17] Figure 17 illustrates the PFM analysis results when a voltage of 3V is applied to a ferroelectric structure according to an experimental example of the present invention. [Figure 18] Figure 18 illustrates the PFM analysis results when a voltage of 4V is applied to a ferroelectric structure according to an experimental example of the present invention. [Figure 19] Figure 19 illustrates the PFM analysis results when a voltage of 5V is applied to a ferroelectric structure according to an experimental example of the present invention. [Figure 20] Figure 20 illustrates the PFM analysis results when a voltage of 10V is applied to a ferroelectric structure according to an experimental example of the present invention. [Figure 21] Figure 21 shows the current-voltage characteristics of a ferroelectric structure according to an experimental example of the present invention. [Figure 22] Figure 22 is a diagram illustrating the voltage application process for acquiring a random current signal using a ferroelectric structure according to an experimental example of the present invention. [Figure 23] Figure 23 shows the current values ​​measured over 784 cycles with an operating voltage of 3V and a read voltage of 0.5V applied. [Figure 24] Figure 24 shows a current distribution histogram based on the results in Figure 23. [Figure 25] Figure 25 shows the current values ​​measured over 784 cycles with an operating voltage of 3V and a read voltage of 1.0V applied. [Figure 26] Figure 26 shows a current distribution histogram based on the results in Figure 25. [Figure 27] Figure 27 shows the current values ​​measured over 784 cycles with an operating voltage of 3V and a read voltage of 1.5V applied. [Figure 28] Figure 28 shows a current distribution histogram based on the results in Figure 27. [Figure 29] Figure 29 shows the current values ​​measured over 784 cycles with an operating voltage of 4V and a read voltage of 0.5V applied. [Figure 30] Figure 30 shows a current distribution histogram based on the results in Figure 29. [Figure 31] Figure 31 shows the current values ​​measured over 784 cycles with an operating voltage of 4V and a read voltage of 1.0V applied. [Figure 32] Figure 32 shows a current distribution histogram based on the results in Figure 31. [Figure 33] Figure 33 shows the current values ​​measured over 784 cycles with an operating voltage of 4V and a read voltage of 1.5V applied. [Figure 34] Figure 34 shows a current distribution histogram based on the results in Figure 33. [Figure 35] Figure 35 shows the current values ​​measured over 784 cycles with an operating voltage of 5V and a read voltage of 0.5V applied. [Figure 36]Figure 36 shows a current distribution histogram based on the results in Figure 35. [Figure 37] Figure 37 shows the current values ​​measured over 784 cycles with an operating voltage of 5V and a read voltage of 1.0V applied. [Figure 38] Figure 38 shows a current distribution histogram based on the results in Figure 37. [Figure 39] Figure 39 shows the current values ​​measured over 784 cycles with an operating voltage of 5V and a read voltage of 1.5V applied. [Figure 40] Figure 40 shows a current distribution histogram based on the results in Figure 39. [Figure 41] Figure 41 is a diagram illustrating the binarization and key classification process for random current values ​​obtained using a ferroelectric structure according to an experimental example of the present invention. [Figure 42] Figure 42 is an image showing the binarization and key classification results when an operating voltage of 3V is applied. [Figure 43] Figure 43 is an image showing the binarization and key classification results when an operating voltage of 4V is applied. [Figure 44] Figure 44 is an image showing the binarization and key classification results when an operating voltage of 5V is applied. [Figure 45] Figure 45 shows a histogram of current values ​​obtained at different readout voltages. [Figure 46] Figure 46 shows a time-difference plot of current fluctuations with respect to a readout voltage of 0.5V. [Figure 47] Figure 47 shows a time-difference plot of current fluctuations with respect to a readout voltage of 1.0V. [Figure 48] Figure 48 shows a time-difference plot of current fluctuations with respect to a read voltage of 1.5V. [Figure 49] Figure 49 shows the magnitude of current fluctuations due to read voltage intensity. [Figure 50]Figure 50 shows the uniformity and entropy values ​​derived when an operating voltage of 3V and a readout voltage of 0.5V are applied. [Figure 51] Figure 51 shows the uniformity and entropy values ​​derived when an operating voltage of 3V and a readout voltage of 1.0V are applied. [Figure 52] Figure 52 shows the uniformity and entropy values ​​derived when an operating voltage of 3V and a readout voltage of 1.5V are applied. [Figure 53] Figure 53 shows the uniformity and entropy values ​​derived when an operating voltage of 4V and a readout voltage of 0.5V are applied. [Figure 54] Figure 54 shows the uniformity and entropy values ​​derived when an operating voltage of 4V and a readout voltage of 1.0V are applied. [Figure 55] Figure 55 shows the uniformity and entropy values ​​derived when an operating voltage of 4V and a readout voltage of 1.5V are applied. [Figure 56] Figure 56 shows the uniformity and entropy values ​​derived when an operating voltage of 5V and a readout voltage of 0.5V are applied. [Figure 57] Figure 57 shows the uniformity and entropy values ​​derived when an operating voltage of 5V and a readout voltage of 1.0V are applied. [Figure 58] Figure 58 shows the uniformity and entropy values ​​derived when an operating voltage of 5V and a readout voltage of 1.5V are applied. [Figure 59] Figure 59 visualizes the uniformity values ​​at different operating and read voltages. [Figure 60] Figure 60 visualizes the entropy values ​​at different operating and readout voltages. [Figure 61] Figure 61 shows a Hamming distance histogram of a ferroelectric structure based on an experimental example of the present invention. [Figure 62]Figure 62 visualizes the average Hamming distance values ​​at different operating and readout voltages. [Figure 63] Figure 63 shows an image obtained by estimating the π value using the Monte-Carlo simulation. [Figure 64] Figure 64 shows autocorrelation images of ferroelectric structures with different keys, based on experimental examples of the present invention. [Figure 65] Figure 65 shows a histogram of the correlation coefficients of ferroelectric structures based on experimental examples of the present invention. [Figure 66] Figure 66 visualizes the average correlation coefficient values ​​at different operating and read voltages. [Figure 67] Figure 67 is a diagram illustrating the results of the international standard encryption performance evaluation using Experimental Example 6. [Figure 68] Figure 68 shows a histogram of Hamming distances between 28 keys obtained from 10 pairs of different ferroelectric structures. [Figure 69] Figure 69 visualizes the average Hamming distance values ​​for 10 pairs of different ferroelectric structures. [Figure 70] Figure 70 shows a histogram of correlation coefficients between 28 keys obtained from 10 pairs of different ferroelectric structures. [Figure 71] Figure 71 visualizes the average correlation coefficient values ​​of 10 different pairs of ferroelectric structures. [Modes for carrying out the invention]

[0040] Preferred embodiments of the present invention will be described in detail below with reference to the attached drawings. However, The technical concept of the invention is not limited to the embodiments described herein, but may also be expressed in other forms. It can also be embodyed. The embodiments described here are thorough and complete in their disclosure. To that end, and to ensure that the concept of the present invention is fully communicated to those skilled in the art, It is.

[0041] In this specification, when one component is said to be on another component, it means that the other component It can be formed directly on the constituent elements, or a third constituent element can be sandwiched between them. This also means that it is possible. Furthermore, in drawings, the shape and size are effective in conveying the technical content. It is exaggerated for the sake of explanation.

[0042] Furthermore, in various embodiments of this specification, terms such as first, second, third, etc. may be used in various contexts. While used to describe the constituent elements, these constituent elements are not limited by such terminology. It should not be done. These terms are simply used to distinguish one component from another. It is only used for that purpose. Therefore, in one embodiment, as the first component, What has been referred to may also be referred to as a second component in other embodiments. Each embodiment described and illustrated herein also includes complementary embodiments. In this context, "and / or" means that at least one of the constituent elements listed before or after it is included. It is used as such.

[0043] In the specification, singular expressions mean plural unless the context clearly indicates otherwise. This also includes the expression. Furthermore, terms such as "includes" or "possesses" are subject to change as described in the specification. Specify that there are symbols, numbers, steps, components, or combinations thereof. It is an attempt to include one or more other features, numbers, steps, components, or This should not be understood as excluding the existence or possibility of adding combinations of these elements. Furthermore, in this specification, "connection" means indirectly connecting multiple components, and directly connecting them. It is used to mean both tactically connecting or linking things together.

[0044] Furthermore, in explaining the present invention, we will provide specific explanations of related known functions or configurations. If it is determined that the explanation unnecessarily obscures the gist of the present invention, then the detailed explanation shall be omitted. Omitted.

[0045] (Ferroelectric structure, method for manufacturing the same, and method of operation) Figure 1 is a flowchart illustrating the manufacturing method of a ferroelectric structure according to an embodiment of the present invention. Figure 2 shows a step in the method for manufacturing a ferroelectric structure according to an embodiment of the present invention. Figure 3 is a schematic diagram illustrating S110, and shows a ferroelectric structure according to an embodiment of the present invention. Figure 4 is a schematic diagram illustrating step S120 of the manufacturing method, and it shows the present invention. A schematic diagram illustrating step S130 in the method for manufacturing a ferroelectric structure according to the embodiment. Figure 5 shows a method for manufacturing a ferroelectric structure according to an embodiment of the present invention, specifically step S Figure 6 is a schematic diagram illustrating 140, and shows a ferroelectric structure according to an embodiment of the present invention. This is a flowchart to explain how it works.

[0046] As shown in Figures 1 and 2, the substrate 100 is prepared (S110). In one embodiment According to this, the substrate 100 is a silicon semiconductor substrate. More specifically, the substrate 100 This is a substrate in which a silicon oxide (SiO2) layer 120 is formed on a silicon (Si) substrate 110. In other embodiments, the substrate 100 is a compound semiconductor substrate. According to this, the substrate 100 is a glass substrate. Furthermore, according to another embodiment, the substrate 100 is a plastic substrate. The type of substrate 100 is not limited to this. .

[0047] As shown in Figures 1 and 3, the lower electrode 200 is formed on the substrate 100. (S120). According to one embodiment, the lower electrode 200 contains a metal. For example, the lower The lower electrode 200 contains gold (Au). According to one embodiment, the lower electrode 200 is an electron beam Using murisography (E-beam lithography) and electron beam deposition methods The lower electrode 200 is formed. The method and material for forming the lower electrode 200 described above are merely examples, and the lower The method and type of material used to form the electrode 200 are not limited.

[0048] As shown in Figures 1 and 4, a ferroelectric layer 300 is formed on the lower electrode 200. (S130). According to one embodiment, the ferroelectric layer 300 is a two-dimensional ferroelectric (two dim It contains a two-dimensional ferroelectric material. Furthermore, the two-dimensional ferroelectric materials are different from each other. It contains elemental compounds. For example, the ferroelectric layer may contain molybdenum disulfide (MoS2), hafnium acid It contains either HfO2 or CuInP2S6 (CIPS).

[0049] According to one embodiment, the ferroelectric layer 300 is mechanically peeled off from the bulk. A dimensional ferroelectric material is formed on the lower electrode 200 by a dry transfer method. The method for forming the ferroelectric layer 300 is not limited to this.

[0050] As shown in Figures 1 and 5, the upper electrode 400 is formed on the ferroelectric layer 300. (S140). This allows the ferroelectric structure according to the above embodiment to be manufactured. According to the description, the upper electrode 400 contains a metal. For example, the upper electrode 400 contains gold (A Includes u). According to one embodiment, the upper electrode 400 is used for electron beam lithography and electron beam lithography. It is formed by a sub-beam deposition method. The method and material for forming the upper electrode 400 described above are, for example, This is merely an illustration, and the method and type of material used to form the upper electrode 400 are not limited. .

[0051] When a voltage is applied to the ferroelectric structure, the two-dimensional ferroelectricity of the ferroelectric layer 300 One elemental ion of any of the different elements contained in the material is located within the ferroelectric layer 300. The position changes. For example, the ferroelectric layer 300 is the two-dimensional ferroelectric material, CuInP2S6(C If it includes IPS, the ferroelectric layer 30 is subjected to a voltage applied to the ferroelectric structure. The position of the copper ions (Cu+) within the O changes.

[0052] Furthermore, due to elemental ions whose positions change within the ferroelectric layer 300, the ferroelectric layer 300 The crystal structure changes. For example, when the position of copper ions (Cu+) within the ferroelectric layer 300 changes. The crystal structure of the ferroelectric layer 300 changes from a symmetric crystal structure to an asymmetric crystal structure. The crystal structure changes to a symmetrical one.

[0053] Furthermore, as the crystal structure of the ferroelectric layer 300 changes, the ferroelectric layer 300 will change. Polarization occurs. For example, in the ferroelectric layer 300 containing CuInP2S6 (CIPS) This results in polarization in the vertical direction (Out of Plane, OOP).

[0054] In other words, when a voltage is applied to the ferroelectric structure, the secondary of the ferroelectric layer 300 The elemental ions of any one of the different elements contained in the original ferroelectric material (e.g., CIPS) (For example, Cu+ ions) change position within the ferroelectric layer 300 The crystal structure changes (for example, from a symmetric crystal structure to an asymmetric crystal structure), and this results in In the ferroelectric layer 300, polarization occurs (for example, polarization occurs in the vertical direction).

[0055] In explaining the present invention, "polarization" refers to the separation of the positions of negative and positive charges in an electric field. This refers to a phenomenon in which a dipole moment is present. Also, "in the horizontal direction (In plane) "IP) Polarization" is a negative charge along a direction parallel to the upper or lower surface of the ferroelectric layer 300. This refers to the phenomenon where the positions of the positive charge and the positive charge separate, resulting in the presence of a dipole moment. "Out-of-Plane (OOP) polarization" refers to the upper or lower surface of the ferroelectric layer 300. The positions of negative and positive charges in a perpendicular direction, that is, along the thickness direction of the ferroelectric layer 300. This refers to the phenomenon where two elements separate and acquire a dipole moment.

[0056] As mentioned above, the positional change of specific elemental ions within the ferroelectric layer 300 Then, in the process in which the crystal structure of the ferroelectric layer 300 changes and polarization occurs, the ferroelectric Random domain changes occur in the electrochemical layer 300. More specifically, As a result of partial polarization occurring in the ferroelectric layer 300, random A domain change occurs.

[0057] In the description of the present invention, "partial polarization" refers to a state in which dipoles with different orientations are mixed together. This means a state. For example, if polarization occurs in the ferroelectric layer 300 in the direction perpendicular to the polarity (OOP), the upper side ( Arranged in the upward direction (for example, arranged so that positive charges face the upper surface and negative charges face the lower surface). A dipole is formed and arranged in the bottom direction (for example, negative charge faces the top surface and positive charge faces the top surface). A partially polarized state is defined as a state in which dipoles (arranged to face downwards) are mixed with other elements. As a result, random partial polarization occurs, which is arranged in the upward direction within the ferroelectric layer 300. The dipole that was placed and the positional distribution of the dipoles arranged in the downward direction were randomized, and the Dipoles arranged in the upward direction and dipoles arranged in the downward direction within the ferroelectric layer 300 This means that the proportions of each change randomly.

[0058] In other words, even if the same voltage is repeatedly applied to the ferroelectric structure, the applied voltage will not In response to this voltage, the ferroelectric layer 300 has different domain states and different domain states A polarized state is formed (formation of random domain state and formation of random polarized state). The ferroelectric structure can obtain current values ​​of random intensity for the same applied voltage. In other words, even if the same voltage is applied to the ferroelectric structure multiple times, each applied voltage A voltage can generate current values ​​of different intensities. Due to this characteristic... Furthermore, the ferroelectric structure can be applied to an intrinsic random number generator.

[0059] According to one embodiment, power is applied to the input terminal and output terminal of the ferroelectric structure. A unit (not shown) and a random number generation unit (not shown) are connected. For example, the lower electrode 200 is connected When used as the force terminal and the upper electrode 400 is used as the output terminal, the lower electrode 200 The power supply unit is connected to the upper electrode 400, and the random number generation unit is connected to the upper electrode 400. In contrast, the upper electrode 200 is used as the input terminal and the lower electrode 400 is used as the output terminal. When used as an end, the power supply unit is connected to the upper electrode 200, and the lower electrode The random number generation unit is connected to pole 400. The power supply application unit receives an input voltage below the critical voltage. When pressure is applied, the random number generation unit generates intrinsic random numbers based on the magnitude of the output current corresponding to the input voltage. It can generate numbers.

[0060] According to one embodiment, the ferroelectric structure is used to obtain random current data. The dielectric structure operates according to the procedure shown in Figure 6.

[0061] Specifically, referring to Figure 6, a ferroelectric structure is prepared (S10). Step S1 The ferroelectric structure prepared in 0 is manufactured by the method described in Figures 1 to 5. It is similar to an electrical structure.

[0062] In order to generate polarization in the ferroelectric layer 300, the ferroelectric structure is subjected to an operating voltage (V progra m A step-down voltage (coercive vo) is applied (S20). According to one embodiment, the operating voltage is a step-down voltage (coercive vo) It can be selected within the range of (above) and below the saturation voltage. In this configuration, the step-down voltage (coercive voltage) is determined by a specific ion within the ferroelectric layer 300. This is defined as the voltage at the moment when the movement of ions (e.g., Cu+ ions) begins. According to one embodiment The saturation voltage is determined by the specific ions (for example) within the ferroelectric layer 300. Then, after the movement of Cu+ ions occurs, the complete movement takes place, and further movement of specific ions (for example) occurs. This is defined as the voltage at the moment when no movement of Cu+ ions occurs.

[0063] For example, the operating voltage is selected within a range of the step-down voltage and the saturation voltage, A voltage can be selected to move a certain ion (for example, Cu+ ions) by 50%. For example, the operating voltage is selected within a range of the step-down voltage and the saturation voltage. Furthermore, the voltage is selected to form 50% of the domains within the ferroelectric layer 300. can.

[0064] After step (S20) in which an operating voltage is applied to the ferroelectric structure, Readout voltage (V read By applying ) a current value that reflects the polarization state of the ferroelectric layer 300, (S30). Thereafter, the ferroelectric layer 300 is returned to its state before polarization occurred, and the ferroelectric structure Removal voltage (V) for the structure erase Apply (S40).

[0065] Steps include applying the operating voltage (S20), acquiring the current value (S30), The step of applying the removal voltage (S40) is performed sequentially and repeatedly, and the same operating voltage The voltage is repeatedly applied, and a current value is obtained for each applied operating voltage, A ferroelectric structure can be used to acquire random current data.

[0066] Furthermore, according to one embodiment, the present invention provides a ferroelectric structure that has ideal random number generation performance. In this way, ideal operating voltages and readout voltages can be derived.

[0067] More specifically, among the operating methods of the ferroelectric structure, the compound obtained in step S30 For a given number of current values, the average current value is derived, and based on the derived average current value, the above step Each of the multiple current values ​​obtained in S30 is binarized, and bitwise Generates data. For example, current values ​​above the average current value are binarized to the state "1", and the average current value Current values ​​below the specified value are binarized to a "0" state to generate bit data.

[0068] After generating bit data through binarization, the generated bit data is divided into multiple keys. They are similar. For example, the 784 bits generated consist of 28 bits each that form a key. These are classified into a total of 28 keys.

[0069] After the keys have been classified, an evaluation is performed on the classified keys, and the corresponding evaluation is then evaluated. Derive the operating voltage and read voltage that satisfy the following. For example, for a classified key, The uniformity value calculated by the following equation 1 is 0.5, and the result obtained by the following equation 2 is Derive the operating voltage and readout voltage that have an entropy value of 1. In the case of a random number generator, the probability of the state 0 occurring and the probability of the state 1 occurring are equivalent at 50%, therefore The operating voltage and readout voltage have a uniformity value of 0.5 and an entropy value of 1. It can be derived as an ideal value.

[0070]

number

[0071]

number

[0072] By the method described above, an ideal ferroelectric structure containing a CuInP2S6(CIPS) ferroelectric layer is obtained. As a result of deriving the operating voltage and read voltage, the operating voltage was derived to be 4V, and the read voltage was , which is derived to 1.5V. That is, in a ferroelectric structure containing a CuInP2S6(CIPS) ferroelectric layer, 4 By applying an operating voltage of V and a read voltage of 1.5V, it achieves ideal random number generation performance. This makes it possible to realize a true random number generator.

[0073] As a result, the ferroelectric structure according to the embodiment of the present invention comprises a substrate 100 and the substrate 100 A lower electrode 200 positioned above, and a two-dimensional ferroelectric material positioned on the lower electrode 200 It includes a ferroelectric layer 300 containing a certain material and an upper electrode 400 disposed on the ferroelectric layer 300. This includes obtaining random current values ​​for the same applied voltage.

[0074] As a result, when using the ferroelectric structure according to the above embodiment, the intrinsic random number generator is single element It is embodied in the child. Furthermore, the ferroelectric structure is used for data encryption for data security, encryption Key generation, simulation data generation using random sampling of repeated data, etc. It can be easily applied to.

[0075] The above describes the ferroelectric structure, its manufacturing method, and its operating method according to embodiments of the present invention. This was explained. Below, other fields of the ferroelectric structure (metal / CIPS / metal) according to the embodiment of the present invention Let's explain some application examples.

[0076] According to one embodiment, the ferroelectric structure (metal / CIPS / metal) according to the embodiment of the present invention is thick It is used as the semiconductor layer of a solar cell. More specifically, CuIn is placed between the upper electrode and the lower electrode. As a solar cell having a structure in which a P2S6 (CIPS) semiconductor layer is arranged, the photovoltaic effect (photovoltaic effect) This method uses the c effect to convert light energy into electrical energy and is applied to solar cells. This is possible. As mentioned above, solar cells using CuInP2S6 (CIPS) as the semiconductor layer are Compared to solar cells using different materials as semiconductor layers than CIPS, when the same applied power is applied... This results in a high current output (JSC / Power).

[0077] According to other embodiments, the ferroelectric structure (metal / CIPS / metal) according to the present invention is This applies to non-volatile RF switches. More specifically, it applies to the non-volatile resistance change of the capacitor structure. Using memory, when ON, the RF signal passes through easily with low resistance, and when OFF, high This can be applied to non-volatile RF switches that effectively shield RF signals using resistance and capacitance. Cut.

[0078] The above describes various application examples of the ferroelectric structure according to the embodiment of the present invention. Various modifications of the ferroelectric structure according to the embodiment will be described.

[0079] (First variation: Ferroelectric layer stacked structure) Figure 7 is a diagram illustrating a ferroelectric structure according to a first modified example of the present invention.

[0080] As shown in Figure 7, the ferroelectric structure according to the first modified example of the present invention comprises a substrate 100 and A lower electrode 200 is placed on the substrate 100, and a lower electrode 200 is placed on the lower electrode 200. A ferroelectric layer 310, an intermediate electrode 400 disposed on the first ferroelectric layer 310, and A second ferroelectric layer 320 is placed on the intermediate electrode 400, and on the second ferroelectric layer 320 It includes an upper electrode 500 positioned thereon. That is, the ferroelectric structure according to the first modification is The structure has a second ferroelectric layer 320 laminated on the first ferroelectric layer 310. .

[0081] As described above, the second ferroelectric layer 320 is laminated on the first ferroelectric layer 310. If it has a structure, the operating voltage (V) once program ) and reading voltage (V read ) input, 2 This allows us to obtain random number currents. This improves the throughput of random number generation. To rise.

[0082] According to one embodiment, the first ferroelectric layer 310 and the second ferroelectric layer 320 are It includes a two-dimensional ferroelectric material. For example, the first ferroelectric layer 310 and the second ferroelectric The electrode layer 320 contains CuInP2S6 (CIPS).

[0083] According to other embodiments, the first ferroelectric layer 310 and the second ferroelectric layer 320 are It contains two-dimensional ferroelectric materials that are different from each other. For example, the first ferroelectric layer 310 is CuInP2 In contrast to containing S6(CIPS), the second ferroelectric layer 320 contains CuCrP2S6 or CuInP2Se6. include.

[0084] Furthermore, according to one embodiment, the first ferroelectric layer 310 and the second ferroelectric layer 320 Operating voltage scaling is performed using thickness control. More specifically, The thicker the first ferroelectric layer 310 and the second ferroelectric layer 320, the greater the polarization generation. The voltage required for this increases. This leads to HPC (High-Performance Computing) In encryption situations requiring high operating voltage, the thickness is increased, and edge computing In encryption situations where routing (edge ​​computing) is required, a low operating voltage is necessary. By reducing the thickness, operating voltage scaling is performed.

[0085] (Second variation: Ferroelectric layer split structure) Figure 8 is a diagram illustrating a ferroelectric structure according to a second modified example of the present invention.

[0086] As shown in Figure 8, the ferroelectric structure according to the second modified example of the present invention comprises a substrate 100 and A lower electrode 200 is placed on the substrate 100, and a lower electrode 200 is placed on the lower electrode 200. The first ferroelectric layer 310 and the second ferroelectric layer 320, and the first ferroelectric layer 310 and the It includes an upper electrode 400 positioned on a ferroelectric layer 320.

[0087] According to one embodiment, the first ferroelectric layer 310 and the second ferroelectric layer 320 are, Arranged on the lower electrode 200 and aligned along a direction parallel to the upper surface of the lower electrode 200 They are arranged as follows. Also, the lower surface of the first ferroelectric layer 310 and the second ferroelectric layer 320 Both lower surfaces are arranged to be in contact with the lower electrode 200, and the first ferroelectric The upper surface of layer 310 and the upper surface of the second ferroelectric layer 320 are in contact with the upper electrode 400. They are arranged in such a manner. That is, the ferroelectric structure according to the second modified example is in the embodiment Compared to the ferroelectric structure described above, the ferroelectric layer 300 is different from the first ferroelectric layer 310 and the previous It has a structure separated into a second ferroelectric layer 320.

[0088] As described above, the ferroelectric layer 300 is the first ferroelectric layer 310 and the second ferroelectric layer In the case where the dielectric layer 320 is separated, the first ferroelectric layer 310 and the second ferroelectric layer Domain randomness is generated from each of the dielectric layers 320. This results in the first induction Random numbers are generated from the electric layer 310 and the second ferroelectric layer 320, respectively, The efficiency of random number generation improves.

[0089] According to one embodiment, the first ferroelectric layer 310 and the second ferroelectric layer 320 are It includes a two-dimensional ferroelectric material. For example, the first ferroelectric layer 310 and the second ferroelectric The electrode layer 320 contains CuInP2S6 (CIPS).

[0090] According to other embodiments, the first ferroelectric layer 310 and the second ferroelectric layer 320 are It contains two-dimensional ferroelectric materials that are different from each other. For example, the first ferroelectric layer 310 is CuInP2 The second ferroelectric layer 320 contains S6(CIPS) and CuCrP2S6 or CuInP2Se6. As described above, the first ferroelectric layer 310 and the second ferroelectric layer 320 are different secondary When a ferroelectric material is included, it becomes difficult to expect the same results with an element of the same structure, The problems with duplication are resolved, and randomness is also strengthened.

[0091] (Third variation: Upper electrode split structure) Figure 9 is a schematic cross-sectional diagram illustrating a ferroelectric structure according to a third modified example of the present invention. Figure 10 is a schematic plan view illustrating a ferroelectric structure according to a third modified example of the present invention.

[0092] As shown in Figures 9 and 10, the ferroelectric structure according to the third modified example of the present invention is a substrate 100, a lower electrode 200 disposed on the substrate 100, and a lower electrode 200 disposed on the lower electrode 200 A ferroelectric layer 300 is placed on top of the ferroelectric layer 300, and a first upper electrode 410 is placed on top of the ferroelectric layer 300. It includes a second upper electrode 420, a third upper electrode 430, and a fourth upper electrode 440.

[0093] According to one embodiment, the first upper electrode 410, the second upper electrode 420, and The upper electrode 430 of the third electrode and the upper electrode 440 of the fourth electrode are arranged on the ferroelectric layer 300. They are arranged at a distance from each other. That is, the ferroelectric structure according to the third modified example is Compared to the ferroelectric structure according to the embodiment, the upper electrode 400 is the first upper electrode 4 10. The second upper electrode 420, the third upper electrode 430, and the fourth upper electrode It has a structure separated into 440 parts.

[0094] As mentioned above, the upper electrode 400 is the first upper electrode 410, the second upper A structure separated into electrode 420, the third upper electrode 430, and the fourth upper electrode 440. If the first upper electrode to the fourth upper electrode 410, 420, 430, 440 are The efficiency of random number generation is improved by selective randomization and domain randomization of the ferroelectric layer 300. .

[0095] According to one embodiment, the first upper electrode to the fourth upper electrode 410, 420, 43 0 and 440 contain the same metal. For example, the first upper electrode to the fourth upper electrode 4 10, 420, 430, and 440 contain gold (Au).

[0096] According to one embodiment, the first upper electrode to the fourth upper electrode 410, 420, 43 The area sizes of 0 and 440 (the area size in contact with the ferroelectric layer) are different from each other. This increases the number of cases for electrode selection, thus reinforcing randomness and the same input signal. In contrast, the process of generating encryption allows for efficient adjustment of the area of ​​material used, The lifespan of the components will be improved.

[0097] The above describes various modifications of the ferroelectric structure according to the embodiment of the present invention. Specific experimental examples and characteristic evaluation results of the ferroelectric structure according to the embodiment of this invention will be described.

[0098] (Experimental Example 1: Manufacturing and structural verification of ferroelectric structures) Gold (Au) electrodes were deposited on an SiO2 / Si substrate using electron beam lithography and electron beam deposition. It was deposited onto the electrode. Subsequently, CuInP2S6 (CIPS) was secured by a physical exfoliation method, and the secured CuIn P2S6 (CIPS) was transferred onto the lower electrode using a dry transfer method to form a ferroelectric layer. Finally, Gold (Au) electrodes are deposited on the dielectric layer using electron beam lithography and electron beam deposition to form the upper electrode. Ta.

[0099] Figure 11 shows a schematic diagram and optical image of a ferroelectric structure based on an experimental example of the present invention.

[0100] Figure 11 shows a schematic diagram (right) and an optical image (left) of the ferroelectric structure based on the experimental example described above. From 11, it was found that a CuInP2S6(CIPS) ferroelectric layer was formed between the upper and lower electrodes. Light.

[0101] Figure 12 is a schematic diagram of AFM measurement of the ferroelectric layer of a ferroelectric structure according to an experimental example of the present invention. Figure 13 is an image showing the thickness and surface roughness of the ferroelectric layer as measured by AFM.

[0102] As shown in Figures 12 and 13, the ferroelectric layer of the ferroelectric structure in the experimental example is Then, the thickness and surface roughness are measured using an atomic force microscope (AFM). Confirmed. More specifically, a scan was performed within a 30 × 30 μm² region of the ferroelectric layer. Figure 1 As shown in 3, perform a scan along the red line and determine the height (hei) confirmed by the scan. From the ght, nm) profile, it was confirmed that the ferroelectric layer has a thickness of approximately 80 nm.

[0103] (Experimental Example 2: Evaluation of Electrical Polarization Characteristics of Ferroelectric Structures) Figure 14 shows the LGD2 ratio of the CIPS material used in the ferroelectric layer in an experimental example of the present invention. This is a schematic diagram of a heavy well model.

[0104] Figure 14 shows stable, perfectly polarized states in opposite directions due to changes in the position of copper ions (Cu+). A schematic diagram of the LGD double well model is shown.

[0105] CIPS material is capable of spontaneous polarization, which changes in response to an external electric field. It is a crystalline material. The lattice structure of CIPS material consists of the anion [P2S6]4- and the cations Cu+ and In2+. It contains ON ionic bonds. In each single layer, the positional deviation of Cu+ ions is related to the lattice structure. This breaks the symmetry and exhibits a ferroelectric effect, where the polarization state is maintained even when the external electric field disappears.

[0106] As can be seen from Figure 14, the LGD double well model represents the two thermodynamics of CIPS material It exhibits equivalent polarization states (a state in which all dipoles are aligned downwards, or all dipoles are aligned downwards). (Poles are aligned upwards). Therefore, by changing the position of the copper ions (Cu+), LGD To reach other polarization states in the double-well model, an external energy supply in the form of an electric field is required. It becomes clear that it is necessary.

[0107] Figure 15 is a schematic diagram of the PV relationship of a ferroelectric layer according to an experimental example of the present invention.

[0108] Figure 15 shows that the voltage (Voltage, V) applied to the ferroelectric structure in the experimental example results in ferroelectricity. Degree of polarization generated in the electrochemical layer (P, μC / cm²) 2 A schematic diagram illustrating the PV relationship is shown.

[0109] Figure 15 shows that when external voltages of 10V and -10V are applied, saturation polarization occurs. It was confirmed that ated polarization (Ps) occurs, and this is mutual in the LGD double well model. This refers to the moment when a different, stable polarization state is reached. It also refers to the residual state when no further electric field is applied. The two results under ramnant polarization (Pr) conditions were lower than the saturated polarization intensity. It can be confirmed that it has a value.

[0110] On the other hand, the programmed electric field causes a step-down voltage (c) at which the dipole alignment inside the ferroelectric layer begins. Regarding the occupy voltage (Vc), it was confirmed that the corresponding step-down voltages differ slightly in both directions. Yes, it is possible. This is caused by various external factors (electrodes, thermal fluctuations, etc.), which will be explained later. This acts as a cause of the asymmetrical manifestation of the IV characteristics of the ferroelectric layer.

[0111] Figure 16 shows the PFM analysis of a ferroelectric structure without voltage applied, according to an experimental example of the present invention. Figure 17 is a diagram to illustrate the results, and it shows a ferroelectric structure with 3V applied to it according to an experimental example of the present invention. Figure 18 is a diagram illustrating the PFM analysis results under a voltage applied state, and it represents the present invention. This explains the PFM analysis results when a 4V voltage is applied to a ferroelectric structure in an experimental example. Figure 19 shows a ferroelectric structure according to an experimental example of the present invention, to which a voltage of 5V is applied. This figure illustrates the PFM analysis results of the state, and Figure 20 shows a strong induction using an experimental example of the present invention. This diagram illustrates the PFM analysis results when a voltage of 10V is applied to an electrical structure.

[0112] As shown in Figures 16 to 20, an external electric field (voltage application) generates in the ferroelectric layer. To confirm the partial polarization phenomenon, a PFM (Piezoelectric Focus) was performed within a 30 × 30 μm² region of the ferroelectric layer. Polarization analysis was performed using response force microscopy. Specifically, Figures 16 to 20 (a ) shows a schematic diagram of the state in which domains grow in the ferroelectric layer due to the applied voltage. Figures 16 to 20 (b) show the phase (Phase, de) of the ferroelectric layer at its position (Length, nm) along the length. g) shows the profile, and Figures 16 to 20 (c) show the ferroelectric layer under voltage application. The PFM images shown are from Figures 16 to 20 (d), where the intensity (deg) is determined by the phase (deg). .) Shows the profile.

[0113] Figures 16 to 20 show that the domain formation rate increases as the applied voltage increases. This can be seen. Here, the hue contrast of light and dark that appears in the PFM image shows a phase difference of 180 degrees. This signifies an upward-direction, downward-direction dipole arrangement, or domain formation.

[0114] As shown in Figure 16, the ferroelectric layer (CIPS) is completely transparent under the condition that no external voltage is applied. It can be seen that the dipoles are aligned upwards with 100% probability. In contrast to this, Figure 1 From 7, when a voltage greater than the step-down voltage of 3V is applied, dipole distribution occurs within the ferroelectric layer (CIPS). As the alignment changes, dipoles aligned upwards have a 64% probability of being present, and dipoles aligned downwards. It can be seen that dipoles arranged in the opposite direction exist with a probability of 36%. In contrast to this, Figure 1 As shown in 8, when the applied voltage was increased to 4V, the arrangement on the upper side It was found that dipoles are present in 52% of the samples, and dipoles aligned downwards are present in 48% of the samples. Unlike this, as shown in Figure 19, when the applied voltage was increased to 5V, the upward direction Aligned dipoles are present in 37% of cases, and dipoles aligned downwards are present in 63% of cases. It can be seen that, in contrast to this, Figure 20 shows the result when the applied voltage was increased to 10V. It can be confirmed that all dipoles are aligned downwards with 100% probability.

[0115] As a result, the results confirmed in Figures 16 to 20 are the polarization-voltage (P) confirmed in Figure 15. -E) Similar to the result, the saturation voltage at which all dipoles are completely polarized in the same direction is 10V. It can be seen that this indicates a (saturation voltage) state. Also, such results are instantaneous (one time) This suggests that all domains remain unchanged upon voltage application.

[0116] (Experimental Example 3: Evaluation of current characteristics of ferroelectric structures and binarization and key classification based on these characteristics) FIG. 21 is a diagram showing the current-voltage characteristics of the ferroelectric structure according to the experimental example of the present invention.

[0117] As shown in FIG. 21, voltages in different ranges (±3V, ±4V, ±5V) are applied to the ferroelectric structure according to the experimental example, and the measurement results of the current values (I, A) for each case are shown. That is.

[0118] From FIG. 21, a clear polarization state inversion can be confirmed under the positive (+) voltage condition. From this, it can be inferred that the position change of copper ions (Cu+) in the ferroelectric layer (CIPS) occurs due to the external electric field applied to the ferroelectric structure, and thus the dipole array changes. According to this, it can be inferred that the position change of copper ions (Cu+) in the ferroelectric layer (CIPS) occurs due to the external electric field applied to the ferroelectric structure, and thus the dipole array changes. From this, it can be inferred that the position change of copper ions (Cu+) in the ferroelectric layer (CIPS) occurs due to the external electric field applied to the ferroelectric structure, and thus the dipole array changes. That is.

[0119] Also, it can be confirmed that a rapid increase in current intensity begins to occur at a point of about +2V. From this, it can be seen that a conversion from a high resistance state (High Resistance State) due to the generation of polarization to a low resistance state (Low Resistance State) occurs from about +2V. According to this, it can be seen that a conversion from a high resistance state (High Resistance State) due to the generation of polarization to a low resistance state (Low Resistance State) occurs from about +2V. [[ID=二十六]]

[0120] FIG. 22 is a diagram for explaining the voltage application process for obtaining a random current signal by the ferroelectric structure according to the experimental example of the present invention. That is.

[0121] In FIG. 22, the operating voltage (V ) for forming a random polarization state in the ferroelectric structure according to the experimental example, the read voltage (V program ) for reading the current signal corresponding thereto, and thereafter, the removal voltage (V read ) for returning to the initial conditions are applied. Each voltage is applied in a pulse shape, and the time interval between pulses is set to 150 ms. The removal voltage is repeatedly applied. The process of applying the removal voltage (V erase ) for returning to the initial conditions is shown. Each voltage is applied in a pulse shape, and the time interval between pulses is set to 150 ms. The removal voltage is repeatedly applied. That is. Pressure application and operating voltage application are the main sources of entropy for realizing an intrinsic random number generator. Therefore, in order to quantitatively evaluate the random current signal due to dipole polarization, apply the operating voltage → read out the voltage. The process of applying voltage, obtaining current value, and applying removal voltage was repeated a total of 784 times.

[0122] Figure 23 shows the operation voltage of 3V and the read voltage of 0.5V applied for 784 cycles. Figure 24 shows the current values ​​measured under the conditions shown in Figure 23. This is a diagram showing a fabric histogram.

[0123] Figure 23 shows a constant operating voltage (V prog =3V) and a constant read voltage (V read (=0.5V) was used 784 times Figure 24 shows the change in current value measured during the input process, and the current value obtained in Figure 23. The current (nA) is classified into the number of occurrences (Count), and approximated by a Gaussian function. The current distribution histogram is shown below.

[0124] From Figures 23 and 24, a constant operating voltage (3V) and a constant read voltage (0.5V) are 78 During the four input cycles, it was confirmed that random current values ​​were obtained, and the obtained current The average value was confirmed to be 0.434 nA.

[0125] Figure 25 shows the operation voltage of 3V and the read voltage of 1.0V applied for 784 cycles. Figure 26 shows the current values ​​measured under the conditions shown in Figure 25. This is a diagram showing a fabric histogram.

[0126] Figure 25 shows a constant operating voltage (V prog =3V) and a constant read voltage (V read (=1.0V) was used 784 times It shows the change in the measured current value during the process of intermittent input. In FIG. 26, the current value obtained in FIG. 25 (Current, nA) is classified by the number of occurrences (Count), and a current distribution histogram approximated by a Gaussian function is shown.

[0127] From FIGS. 25 and 26, it can be confirmed that random current values are obtained during the process of intermittent input 78 4 times, and the average value of the obtained current value is confirmed to be 0.612 nA.

[0128] FIG. 27 is a diagram showing the current values measured in the state where an operating voltage of 3V and a read voltage of 1.5V are applied during 784 cycles. FIG. 28 is a diagram showing the current distribution histogram based on the results of FIG. 27.

[0129] In FIG. 27, a constant operating voltage (V prog = 3V) and a constant read voltage (V read = 1.5V) are applied during 784 times of intermittent input, and the change in the measured current value is shown. In FIG. 28, the current value (C urrent, nA) obtained in FIG. 27 is classified by the number of occurrences (Count), and a current distribution histogram approximated by a Gaussian function is shown.

[0130] From FIGS. 27 and 28, it can be confirmed that random current values are obtained during the process of intermittent input 78 4 times, and the average value of the obtained current value is confirmed to be 0.746 nA.

[0131] FIG. 29 is a diagram showing the current values measured in the state where an operating voltage of 4V and a read voltage of 0.5V are applied during 784 cycles. FIG. 30 is a diagram showing the current distribution This is a diagram showing a fabric histogram.

[0132] Figure 29 shows a constant operating voltage (V prog =4V) and a constant read voltage (V read (=0.5V) was used 784 times Figure 30 shows the change in current value measured during the input process, and the current value obtained in Figure 29. The current (nA) is classified into the number of occurrences (Count), and a current distribution histogram approximated by a Gaussian function is created. It indicates "mu".

[0133] From Figures 29 and 30, a constant operating voltage (4V) and a constant read voltage (0.5V) are 78 It was found that random current values ​​were obtained during the process of inputting data four times, and the obtained current values The average value was confirmed to be 0.953 nA.

[0134] Figure 31 shows the operation voltage of 4V and the read voltage of 1.0V applied for 784 cycles. This figure shows the current values ​​measured under the conditions described, and Figure 32 shows the current values ​​based on the results in Figure 31. This is a diagram showing a fabric histogram.

[0135] Figure 31 shows a constant operating voltage (V prog =4V) and a constant read voltage (V read (=1.0V) was used 784 times Figure 32 shows the change in current value measured during the input process, and the current value obtained in Figure 31. The current (nA) is classified into the number of occurrences (Count), and a current distribution histogram approximated by a Gaussian function is created. It indicates "mu".

[0136] From Figures 31 and 32, a constant operating voltage (4V) and a constant read voltage (1.0V) are 78 It was found that random current values ​​are obtained during the process of inputting data four times, and the average of the obtained current values The average value was confirmed to be 0.993 nA.

[0137] Figure 33 shows the operation voltage of 4V and the read voltage of 1.5V applied for 784 cycles. Figure 34 shows the current values ​​measured under the conditions shown in Figure 33. This is a diagram showing a fabric histogram.

[0138] Figure 33 shows a constant operating voltage (V prog =4V) and a constant read voltage (V read (=1.5V) was used 784 times Figure 34 shows the change in current value measured during the input process, and the current value obtained in Figure 33. The current (nA) is classified into the number of occurrences (Count), and a current distribution histogram approximated by a Gaussian function is created. It indicates "mu".

[0139] From Figures 33 and 34, a constant operating voltage (4V) and a constant read voltage (1.5V) are found to be 78 During the process of inputting four times, it was confirmed that random current values ​​were obtained, and the obtained current values The average value was confirmed to be 1.007 nA.

[0140] Figure 35 shows the operation voltage of 5V and the read voltage of 0.5V applied for 784 cycles. This figure shows the current values ​​measured under the conditions described, and Figure 36 shows the current values ​​based on the results in Figure 35. This is a diagram showing a fabric histogram.

[0141] Figure 35 shows a constant operating voltage (V prog =5V) and a constant read voltage (V read (=0.5V) for 784 times Figure 36 shows the change in current value measured during the input process, and the current value (C) obtained in Figure 35 is shown in Figure 35. The current (nA) is classified into the number of occurrences (Count), and a current distribution histogram approximated by a Gaussian function is created. It indicates "mu".

[0142] From Figures 35 and 36, a constant operating voltage (5V) and a constant read voltage (0.5V) are 78 It was found that random current values ​​were obtained during the process of inputting data four times, and the obtained current values The average value was confirmed to be 0.831 nA.

[0143] Figure 37 shows the operation voltage of 5V and the read voltage of 1.0V applied for 784 cycles. This figure shows the current values ​​measured under the conditions described, and Figure 38 shows the current values ​​based on the results in Figure 37. This is a diagram showing a fabric histogram.

[0144] Figure 37 shows a constant operating voltage (V prog =5V) and a constant read voltage (V read (=1.0V) was used 784 times Figure 38 shows the change in current value measured during the input process, and the current value obtained in Figure 37. The current (nA) is classified into the number of occurrences (Count), and a current distribution histogram approximated by a Gaussian function is created. It indicates "mu".

[0145] From Figures 37 and 38, a constant operating voltage (5V) and a constant read voltage (1.0V) are found to be 78 It was found that random current values ​​were obtained during the process of inputting data four times, and the obtained current values The average value was confirmed to be 1.011 nA.

[0146] Figure 39 shows the operation voltage of 5V and the read voltage of 1.5V applied for 784 cycles. This figure shows the current values ​​measured under the specified conditions, and Figure 40 shows the current values ​​based on the results in Figure 39. This is a diagram showing a fabric histogram.

[0147] Figure 39 shows a constant operating voltage (V prog =5V) and a constant read voltage (V read (=1.5V) was used 784 times Figure 40 shows the change in current value measured during the input process, and the current value obtained in Figure 39. The current (nA) is classified into the number of occurrences (Count), and a current distribution histogram approximated by a Gaussian function is created. It indicates "mu".

[0148] From Figures 39 and 40, a constant operating voltage (5V) and a constant read voltage (1.5V) are 78 It was found that random current values ​​are obtained during the process of inputting over four periods, and the obtained current values The average value was confirmed to be 1.401 nA.

[0149] The average current values ​​confirmed in Figures 23 to 40 are shown in Table 1 below.

[0150] [Table 1]

[0151] Figure 41 shows the binary values ​​for random current values ​​obtained from a ferroelectric structure according to experimental examples of the present invention. This is a diagram illustrating the classification and key classification processes.

[0152] Figure 41 shows that a constant operating voltage and a constant read voltage were applied for 784 cycles. This shows the process of binarization and key classification for the current value measured under these conditions.

[0153] More specifically, a constant operating voltage and a constant read voltage are applied for 784 cycles. The current value was measured under these conditions, and the average of the measured current value was calculated over 784 cycles. The current value was calculated. Furthermore, based on the calculated average current value, current values ​​above the average current value were treated as follows: For current values ​​below the average current value, the value is binarized to a state of "1" and then set to a state of "0". The image was binarized. Through the process described above, 784 bits were generated, and the generated 784 bits For each set, 28 items were grouped together using a single key, resulting in a total of 28 keys for classification.

[0154] Figure 42 shows the binarization and key classification results when an operating voltage of 3V is applied, as an image. The diagram shows the binarization and key classification when an operating voltage of 4V is applied, and Figure 43 shows the results. The results are shown in images, and Figure 44 shows the binarization when a 5V operating voltage is applied. This is a diagram showing the key classification results in images.

[0155] Figures 42 to 44 show the results after binarization and key classification using the method described in Figure 41, with a 28x2 The results are shown in an 8-pixel color image. Figures 42 to 44 show the applied operating voltage. It can be seen that different random images are represented depending on the pressure applied.

[0156] Figure 45 shows a histogram of current values ​​obtained at different readout voltages. .

[0157] Figure 45 shows the reading voltages of 0.5V, 1.0V, and 1.5V after applying an operating voltage of 4V. The number of occurrences (Counts) based on the current value (I, nA) obtained when a pressure (Vread, V) is applied. The histogram is shown. From Figure 45, it can be seen that the fluctuations in the histogram depend greatly on the readout voltage conditions. The probability (sto) exists that the current signal can be observed under readout voltage conditions lower than the step-down voltage. You can check the (chasticity).

[0158] Figure 46 shows a time-difference plot of current fluctuations with respect to a readout voltage of 0.5V. Figure 47 shows a time-difference plot of current fluctuations with respect to a read voltage of 1.0V, as shown in Figure 48. This figure shows a time-difference plot of current fluctuations with respect to a read voltage of 1.5V.

[0159] Figures 46 to 48 show the current fluctuations for readout voltages of 0.5V, 1.0V, and 1.5V. The degree (time lag plot, TLP) is shown. From Figures 46 to 48, the intensity (In, nA) of the nth current signal is shown. An independent correlation can be observed between the (n+1)th current signal intensity (In+1, nA).

[0160] Figure 49 shows the magnitude of current fluctuations due to read voltage intensity.

[0161] As shown in Figure 49, the read voltages (Vread, V) are 0.5V, 1.0V, and 1.5V. This shows the magnitude (I, nA) of the current fluctuation relative to the given value. Variability or uniformity is ideal. It acts as an important parameter for identifying operating conditions.

[0162] From Figure 49, when the operating voltage is 4V and the read voltage is 0.5V, the variability (σ) is , calculated as 7.5%, with an operating voltage of 4V and a read voltage of 1.0V, variability (σ) is calculated to be 6.3%, and when the operating voltage is 4V and the read voltage is 1.5V, The variability (σ) is calculated to be 5.5%.

[0163] (Experimental Example 4: Ideal operating voltage and for a ferroelectric structure to have ideal random number generation performance) (and reading voltage derivation) The uniformity value was derived using equation 1 below, and the entropy value was derived using equation 2. Ideal In the case of a random number generator, the probability of the state 0 occurring and the probability of the state 1 occurring are equivalent at 50%, therefore The uniformity value is 0.5, and the entropy value is 1. Also, experimental examples... In explaining point 4, binarization and key classification are performed as explained in Figure 41. It was done.

[0164]

number

[0165]

number

[0166] Figure 50 shows the average value derived with an operating voltage of 3V and a readout voltage of 0.5V applied. This figure shows the uniformity value and entropy value.

[0167] As shown in Figure 50, the operating voltage of 3V and the read voltage of 0.5V are applied. For each of the 28 keys classified by state, a uniformity value and an environment were assigned. The tropy value (entropy) is measured and shown.

[0168] From Figure 50, when an operating voltage of 3V and a read voltage of 0.5V are applied, the uniformity value It shows a large difference of 0.5, and the entropy value is a large difference of 1. The 3V operating voltage and 0.5V read voltage are not ideal operating and read voltages. It becomes clear that...

[0169] Figure 51 shows the average value derived with an operating voltage of 3V and a readout voltage of 1.0V applied. This figure shows the uniformity value and entropy value.

[0170] As shown in Figure 51, the operating voltage of 3V and the read voltage of 1.0V are applied. For each of the 28 keys classified by state, a uniformity value and an environment were assigned. The tropy value (entropy) is measured and shown.

[0171] From Figure 51, when an operating voltage of 3V and a read voltage of 1.0V are applied, the uniformity value It can be confirmed that there is a large difference of 0.5, and the entropy value shows a small difference of 1. However, the operating voltage of 3V and the read voltage of 1.0V are ideal operating and read voltages. It can be seen that there is none.

[0172] Figure 52 shows the average value derived with an operating voltage of 3V and a read voltage of 1.5V applied. This figure shows the uniformity value and entropy value.

[0173] Figure 52 shows the two classifications with an operating voltage of 3V and a read voltage of 1.5V applied. For each of the eight keys, a uniformity value and an entropy value are assigned. Measure and show y).

[0174] From Figure 52, when an operating voltage of 3V and a read voltage of 1.5V are applied, the uniformity value It shows a large difference of 0.5, and the entropy value is a large difference of 1. The 3V operating voltage and 1.5V read voltage are not ideal operating and read voltages. It becomes clear that...

[0175] Figure 53 shows the average value derived with an operating voltage of 4V and a readout voltage of 0.5V applied. This figure shows the uniformity value and entropy value.

[0176] Figure 53 shows the two classifications with an operating voltage of 4V and a read voltage of 0.5V applied. For each of the eight keys, a uniformity value and an entropy value are assigned. Measure and show y).

[0177] From Figure 53, when an operating voltage of 4V and a read voltage of 0.5V are applied, the uniformity value It can be seen that the difference is large at 0.5, and the entropy value is small at 1. The operating voltage of 4V and the read voltage of 0.5V are not ideal operating and read voltages. It becomes clear that...

[0178] Figure 54 shows the average value derived with an operating voltage of 4V and a readout voltage of 1.0V applied. This figure shows the uniformity value and entropy value.

[0179] Figure 54 shows the two classifications with an operating voltage of 4V and a read voltage of 1.0V applied. For each of the eight keys, a uniformity value and an entropy value are assigned. Measure and show y).

[0180] From Figure 54, when an operating voltage of 4V and a read voltage of 1.0V are applied, the uniformity value It can be seen that the difference is large at 0.5, and the entropy value is small at 1. The operating voltage of 4V and the read voltage of 1.0V are not ideal operating and read voltages. It becomes clear that...

[0181] Figure 55 shows the average value derived with an operating voltage of 4V and a readout voltage of 1.5V applied. This figure shows the uniformity value and entropy value.

[0182] Figure 55 shows the two classifications with an operating voltage of 4V and a read voltage of 1.5V applied. For each of the eight keys, a uniformity value and an entropy value are assigned. Measure and show y).

[0183] From Figure 55, when an operating voltage of 4V and a read voltage of 1.5V are applied, all keys ( The uniformity value for keys 0-28 appears close to 0.5, and the uniformity for all keys (0-28 keys) It can be seen that the tropy value appears close to 1. That is, with an operating voltage of 4V and 1.5 It can be seen that the read voltage of V is the ideal operating voltage and read voltage.

[0184] Figure 56 shows the average value derived with an operating voltage of 5V and a readout voltage of 0.5V applied. This figure shows the uniformity value and entropy value.

[0185] Figure 56 shows the two classifications with an operating voltage of 5V and a read voltage of 0.5V applied. For each of the eight keys, a uniformity value and an entropy value are assigned. Measure and show y).

[0186] From Figure 56, when an operating voltage of 5V and a readout voltage of 0.5V are applied, the uniformity value It shows a large difference of 0.5, and the entropy value is a large difference of 1. The 5V operating voltage and 0.5V read voltage are not ideal operating and read voltages. It becomes clear that...

[0187] Figure 57 shows the average value derived with an operating voltage of 5V and a readout voltage of 1.0V applied. This figure shows the uniformity value and entropy value.

[0188] Figure 57 shows the two classifications with an operating voltage of 5V and a read voltage of 1.0V applied. For each of the eight keys, a uniformity value and an entropy value are assigned. Measure and show y).

[0189] From Figure 57, when an operating voltage of 5V and a read voltage of 1.0V are applied, the uniformity value It shows a large difference of 0.5, and the entropy value is a large difference of 1. The 5V operating voltage and 1.0V read voltage are not ideal operating and read voltages. It becomes clear that...

[0190] Figure 58 shows the average value derived with an operating voltage of 5V and a readout voltage of 1.5V applied. This figure shows the uniformity value and entropy value.

[0191] Figure 58 shows the two classifications with an operating voltage of 5V and a read voltage of 1.5V applied. For each of the eight keys, a uniformity value and an entropy value are assigned. Measure and show y).

[0192] From Figure 58, when an operating voltage of 5V and a read voltage of 1.5V are applied, the uniformity value It can be seen that the difference is large at 0.5, and the entropy value is small at 1. The 5V operating voltage and 1.5V read voltage are not ideal operating and read voltages. It becomes clear that...

[0193] Figure 59 visually shows the uniformity values ​​at different operating and read voltages. Figure 60 is a diagram showing the entropy at different operating voltages and readout voltages. This is a diagram that visualizes the value (Entropy).

[0194] Figures 59 and 60 show different operating voltages (3V, 4V, 5V) and different readings. Average uniformity value at output voltage (0.5V, 1.0V, 1.5V) (measured with 28 keys) (Average value of uniformity) and average entropy value (Entropy value measured with 28 keys) The average value is shown in a color map image.

[0195] Figure 59 shows that the average uniformity value measured at an operating voltage of 4V and a readout voltage of 1.5V is 0. Closer to 5, from Figure 60, the average E measured with an operating voltage of 4V and a readout voltage of 1.5V It can be seen that the tropy value is close to 1.

[0196] As a result, the reason why the ferroelectric structure in the above experimental example has ideal random number generation performance is It can be confirmed once again that the intended operating voltage is 4V and the read voltage is 1.5V.

[0197] (Experimental Example 5: Additional parametric calculations for verifying the randomness of ferroelectric structures) Based on the ideal operating voltage of 4V and read voltage of 1.5V derived from Experimental Example 4, The Hamming distance (HDi) can be used to determine the randomness of the output results of ferroelectric structures based on experimental examples. The correlation coefficient (CCintra) was calculated.

[0198] To assess the randomness between the binarized keys, we used the Hamming distance (HDintra). This is the number of bit substitutions required to convert one key to another. This was defined and used to compare keys generated by the same device.

[0199] To form a cryptographically secure key, the Hamming distance must be 5. It must be 0% or greater. For example, in the case of a key composed of 28 bits, The humming distance should be 14. If it is too low or too high, Keys with distance values ​​are relatively easy to exploit in Brute Force Testing, a hacking method. It is known that it can be deciphered using the I Ching.

[0200] Figure 61 shows the Hamming distance histogram of a ferroelectric structure according to an experimental example of the present invention. Yes, Figure 62 shows the average Hamming distance values ​​at different operating and read voltages. This is a diagram that has been memorized.

[0201] Figure 61 shows the 28-bit data measured under the operating voltage of 4V and the read voltage of 1.5V. Figure 61 shows the Hamming distance histogram images for 378 of the configured keys. Therefore, the average Hamming distance value of the ferroelectric structure in the above experimental example is close to the ideal value. It can be seen that it is 4.01, which indicates the encryption capability of the ferroelectric structure in the above experimental example. It can be seen that it excels in this area.

[0202] Figure 62 shows the average Hamming distance values ​​(Int) under different operating voltage and read voltage conditions. The color map image for ra-HD is shown. From Figure 62, the operating voltage of 4V and the readout of 1.5V are shown. Under the given voltage conditions, it can be seen that the average Hamming distance value appears to be close to 14.

[0203] Figure 63 shows an image of the estimated π value using the Monte-Carlo simulation. ru.

[0204] Figure 63 shows the estimated π value using the Monte-Carlo simulation. More specifically, The method described above involves dividing the area of ​​a circle with radius r by the area of ​​a square with length 2r. This method utilizes the fact that the value is π / 4. This is illustrated in Figure 63. As described above, using the binarized key obtained from the ferroelectric structure in the experimental example, 28 A binarized colormap image composed of 28 pixels was created. Here, dark A pixel of a light color represents a bit of "1", and a pixel of a bright color represents a bit of " This represents "0". Next, in order to estimate the π value, the number of bright colored pixels inside the largest circle and The ratio of bright colored pixels inside a square was calculated. The calculation results showed that the strength of the experimental example described above was In the case of dielectric structures, it can be seen that the π value is 3.1, which is close to the actual value.

[0205] Figure 64 shows autocorrelation images of ferroelectric structures with different keys based on experimental examples of the present invention. This is a diagram.

[0206] As shown in Figure 64, the results obtained under the operating voltage of 4V and readout voltage of 1.5V are as follows: Autocorrelation as a function of bit delay for each of the 28 keys, each 8 bits long. It represents a relationship (autocolation).

[0207] Figure 64 shows that no high-size spikes were observed, and therefore the key (keY) does not exhibit periodicity. It can be seen that it is virtually nonexistent. In other words, it is generated by the ferroelectric structure according to the experimental example described above. It can be seen that the bitstream is essentially a random point.

[0208] Figure 65 shows a histogram of the correlation coefficients of ferroelectric structures based on experimental examples of the present invention. Figure 66 visualizes the average correlation coefficient values ​​at different operating and readout voltages. This is a diagram.

[0209] As shown in Figures 65 and 66, the periodicity between different bits was verified. Then, a correlation coefficient (CCintra) was used to determine the degree of correlation. The autocorrelation function (ACF) was [-1 The values ​​are located in the interval [1], where -1 indicates a semi-correlation, 1 indicates a correlation, and 0 indicates a correlation between the values. This means that it has not been done. Also, the results in Figures 65 and 66 are for an operating voltage of 4V and For each of the 28-bit keys measured under a read voltage condition of 1.5V This result demonstrates autocorrelation.

[0210] Figure 65 confirms that the correlation coefficient is approximately -0.02. Examples show that ferroelectric structures exhibit superior random number generation capabilities as intrinsic random number generators (TRNGs). This can be seen. Also, from Figure 62, the average correlation under the conditions of a 4V operating voltage and a 1.5V readout voltage can be seen. It can be confirmed that the coefficient value appears close to -0.02.

[0211] (Experimental Example 6: Evaluation of International Standard Encryption Performance of Ferroelectric Structures) Standard statistical test package developed by the National Institute of Standards and Technology (NIST sp 800-22 rev.) Using 1a), the randomness of the ferroelectric structure in the experimental example as an intrinsic random number generator (TRNG) An evaluation was conducted.

[0212] The purpose of the aforementioned experimental example 6 is to induce strong induction using the experimental example having a metal-CIPS-metal structure. To determine whether a random number generator based on an electrical structure exhibits suitable performance for generating random numbers for safety purposes Therefore, a total of 15,680 bits of random current data are extracted, This evaluates the null hypothesis regarding randomness and returns a p-value at a 99% confidence level. The relevant data was evaluated using Rotol. Here, bit represents a P-value of 0.00. It is considered truly random only if it is greater than 1.

[0213] Figure 67 is a diagram illustrating the results of the international standard encryption performance evaluation using Experimental Example 6.

[0214] As shown in Figure 67, all NIST tests were successfully passed without any post-processing steps. This shows that the intrinsic random number generator based on the ferroelectric structure in the above experimental example It is clear that it has high suitability for the field of cryptography.

[0215] (Experimental Example 7: Verification of random number generation parameters between different ferroelectric structures) Physical non-replicability is a fundamental requirement for true random number generators. Specifically, one The random number generated by one random number generator cannot be replicated by other random number generators. Therefore, this is to prevent anyone from paradoxically debunking the random number generator.

[0216] Experimental Example 7 demonstrates the non-replicability of the intrinsic random number generator based on the ferroelectric structure described in the aforementioned experimental example. To evaluate this, ten ferroelectric structures were prepared according to the experimental example described above, and an operating voltage of 4V and 1. For each read voltage condition of 5V, 28 bit keys were generated.

[0217] Figure 68 shows the hammer between 28 keys obtained from 10 pairs of different ferroelectric structures. Figure 69 shows a histogram of the ferroelectric distance between 10 different ferroelectric structures. This is a diagram visualizing the average Hamming distance values.

[0218] As shown in Figure 68, obtained from 10 different pairs of ferroelectric structures. Figure 69 shows a histogram of the Hamming distance (HDinter) between the 28 keys. For example, the mean Hamming distance (Mean inter-) of 10 pairs of different ferroelectric structures. The HD) value color map image is shown. In Figure 68, the inters use different structures. This refers to the distance between the generated key pairs. From Figures 68 and 69, the mean hammin It was confirmed that the distance value approached the ideal value of 14, which indicates that they have different structures. This result proves that the random number generated by the field is unique.

[0219] Figure 70 shows the correlation between 28 keys obtained from 10 pairs of different ferroelectric structures. Figure 71 shows a coefficient histogram, and the plane of 10 different pairs of ferroelectric structures is shown. This is a diagram visualizing the mean correlation coefficient values.

[0220] Figure 70 shows 28 keys obtained from 10 different pairs of ferroelectric structures. The correlation coefficient (CCinter) histogram between the 10 different ferroelectric structures is shown in Figure 71. A color map image of the mean inter-CC values ​​of pairs of objects is shown. Figure 70 and From Figure 71, it can be confirmed that the average correlation coefficient value approached the ideal value of 0, which means The results demonstrate that there is no correlation between random number results generated by different structures. be.

[0221] Although the present invention has been described in detail above using preferred embodiments, the scope of the present invention is limited to specific embodiments. The analysis should not be limited to the form of application, but should be conducted according to the attached claims. A person with ordinary skill in the art would understand this without departing from the scope of the present invention. You will then understand that many modifications and transformations are possible. [Explanation of symbols]

[0222] 100 circuit boards 110 Si substrate 120 SiO2 layer 200 Lower electrode 300 Ferroelectric layer 310, 320 First ferroelectric layer, second ferroelectric layer 400 Upper electrode, middle electrode 410, 420, 430, 440 Upper electrodes 1 to 4 500 Upper electrode

Claims

1. The steps include preparing the circuit board and The steps include forming a lower electrode on the substrate, On the lower electrode, CIPS (CuInP 2 S 6 The steps include forming a first ferroelectric layer containing ) The steps include forming an intermediate electrode on the first ferroelectric layer, CuCrP 2 S 6 The steps include forming a second ferroelectric layer containing, The step of forming an upper electrode on the second ferroelectric layer to manufacture a ferroelectric structure includes, When a voltage of 4V or more is applied to the ferroelectric structure, the positions of copper ions in the first ferroelectric layer and the second ferroelectric layer change, the crystal structure of the first ferroelectric layer and the second ferroelectric layer changes from a symmetric crystal structure to an asymmetric crystal structure, and polarization occurs in the first ferroelectric layer and the second ferroelectric layer. In the process in which the crystal structure of the first ferroelectric layer and the second ferroelectric layer changes and polarization occurs, random domain changes occur in the first ferroelectric layer and the second ferroelectric layer, and random current values ​​of random intensity are obtained for the same applied voltage, and A method for manufacturing a ferroelectric structure, characterized in that the lower electrode, the intermediate electrode, and the upper electrode all contain gold (Au).

2. The method for manufacturing a ferroelectric structure according to claim 1, characterized in that when the same voltage is applied multiple times, different current values ​​of intensity are generated for each applied voltage.

3. The method for manufacturing a ferroelectric structure according to claim 1, characterized in that the first ferroelectric layer is formed by a dry transfer method of the CIPS mechanically peeled from the bulk onto the lower electrode.

4. A method for manufacturing a ferroelectric structure according to claim 1, characterized in that when a voltage is applied, polarization in the first ferroelectric layer occurs in the vertical direction (out-of-plane, OOP).

5. The lower electrode is formed by either electron beam lithography or electron beam deposition. The method for manufacturing a ferroelectric structure according to claim 1, characterized in that the upper electrode is formed by either electron beam lithography or electron beam deposition.

6. The method for manufacturing a ferroelectric structure according to claim 1, characterized in that, when a voltage is applied, the first ferroelectric layer has a state in which dipoles arranged such that positive charges face the upper surface of the first ferroelectric layer and negative charges face the lower surface of the first ferroelectric layer are mixed with dipoles arranged such that negative charges face the upper surface of the first ferroelectric layer and positive charges face the lower surface of the first ferroelectric layer.

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