Assembled bodies and semiconductor manufacturing equipment

Abstract

The present invention provides a jointed body with improved bonding properties and reduced residual stress caused by differences in thermal expansion coefficients. [Solution] The bonded body comprises a first member made of ceramic, a second member made of ceramic or metal, and a bonding layer disposed between the first member and the second member, the bonding layer mainly composed of either In (indium) or Sn (tin), and containing one of Ti (titanium), Hf (hafnium), or Zr (zirconium). The bonding layer has a compound containing one of Ti, Hf, or Zr, and in a cross-section along the lamination direction in which the first member, the bonding layer, and the second member are stacked, the area ratio occupied by the compound in the first interface region formed between the first member and the bonding layer is 6% or more and 60% or less.

Description

Technical Field

[0001] The present invention relates to a joined body and a semiconductor manufacturing apparatus.

Background Art

[0002] There is known a joined body in which two members are joined by a joining layer containing a joining material (see, for example, Patent Document 1). The joining layer described in Patent Document 1 includes a joining material mainly composed of indium (In) and a metal layer formed of a mesh member and into which the joining material has entered.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] One of the important problems in joining is the reduction of residual stress caused by the difference in the coefficients of thermal expansion of the members to be joined and the joining material. In particular, when a ceramic and a metal material are joined, the difference in thermal expansion between these two materials is large. Also, when different types of ceramics are joined, the difference in thermal expansion remains at the joining interface, and thus the brittle ceramic material is likely to be affected by the residual stress. For example, when alumina and a metal material are joined, 42 alloy having a coefficient of thermal expansion close to that of alumina is used as the joining material, or a thin Cu·Ag foil is used as a soft material.

[0005] As described in Patent Document 1, using In (in), which has a low melting point, as a bonding material enables bonding at low temperatures. Because In is a soft metal, residual stress caused by differences in thermal expansion coefficients is reduced. However, pure metals such as In and Sn (tin) are not easily wetted by ceramics. Therefore, when the members to be bonded using In, etc., are ceramic, some kind of chemical bond or reaction layer is required at the interface between the bonding material and the ceramic to increase the adhesion strength. In this regard, Patent Document 1 increases the adhesion strength by having the bonding layer consist of a metal layer of a mesh member made of metal wires and a bonding material mainly composed of In. However, there was room for improvement in the adhesion strength of bonding layers containing In.

[0006] The present invention has been made to solve at least some of the above-mentioned problems, and aims to provide a jointed body that improves jointability and reduces residual stress caused by differences in thermal expansion coefficients. [Means for solving the problem]

[0007] The present invention was made to solve at least some of the problems described above, and can be realized in the following forms.

[0008] (1) According to one embodiment of the present invention, a bonded body is provided. This bonded body comprises a first member made of ceramic, a second member made of ceramic or metal, and a bonding layer disposed between the first member and the second member, the bonding layer mainly composed of either In (indium) or Sn (tin), and containing one of Ti (titanium), Hf (hafnium), or Zr (zirconium), wherein the bonding layer has a compound containing one of Ti, Hf, or Zr, and in a cross section along the lamination direction in which the first member, the bonding layer, and the second member are laminated, the area ratio occupied by the compound in the first interface region formed between the first member and the bonding layer is 6% or more and 60% or less.

[0009] In this configuration, the first and second members are joined by a bonding layer. The bonding layer contains a compound formed from In or Sn, which have poor wettability with ceramics, and one of the active metals Ti, Hf, or Zr. The area ratio of this compound to the first interface region formed between the first member and the bonding layer is between 6% and 60%. That is, because a certain amount of the compound containing the active metal is present in the first interface region, the wettability of the bonding layer, which is mainly composed of In or Sn, with respect to the first member made of ceramic is improved, and the bonding performance with the first member is enhanced. Furthermore, because In and Sn have low melting points, the first and second members are joined at low temperatures. Since In and Sn are soft metals, residual stress in the joint caused by the difference in thermal expansion coefficients is reduced. This further improves the bonding performance between the first and second members.

[0010] (2) In the above-described form of the joint, the area ratio may be 6% or more and 30% or less. With this configuration, if the content of active metals such as Ti is high, there is a risk of oxidation of the active metals. However, by limiting the upper limit of the area ratio in the first interface region, oxidation of the active metals is suppressed. As a result, the bonding strength between the first component and the bonding layer is improved.

[0011] (3) In the above-described configuration of the bonded body, the second member is made of metal and has a metal coating layer on its surface, the metal coating layer forms an intermetallic compound with In or Sn contained in the bonding layer, and in a cross section along the stacking direction, the sum of the peak intensities of the intermetallic compounds in the X-ray diffraction of the second interface region formed between the second member and the bonding layer is less than 0.7 of the peak intensity of In or Sn. With this configuration, even if the second member is made of an Al alloy or other material with poor wettability to In or Sn, the presence of a metal coating layer on its surface with good wettability to In improves the bonding between the second member and the bonding layer. Furthermore, in the second interface region formed between the second member and the bonding layer, an intermetallic compound is formed between the metal coating layer on the surface of the second member and either In or Sn, which are the main components of the bonding layer. The sum of the peak intensities of the intermetallic compound in X-ray diffraction is less than 0.7 of the peak intensity of In or Sn. In other words, the proportion of intermetallic compounds present in the second interface region is small compared to In or Sn, which are the main components of the bonding layer. By limiting the presence of brittle intermetallic compounds in the second interface region, the strength of the bonding layer is improved.

[0012] Furthermore, the present invention can be realized in various forms, for example, in the form of a bonded body, a holding device, an electrostatic chuck, a semiconductor manufacturing apparatus, and a system equipped therewith, as well as in the form of a method for manufacturing a bonded body, a method for manufacturing a semiconductor manufacturing apparatus, etc. [Brief explanation of the drawing]

[0013] [Figure 1] This is a schematic perspective view showing the appearance of the electrostatic chuck according to the first embodiment. [Figure 2] This is a schematic cross-sectional view of an electrostatic chuck. [Figure 3] This is an explanatory diagram of the first interface region and the second interface region. [Figure 4] This is an explanatory diagram regarding the definition of the first interface region. [Figure 5] This is a flowchart of the manufacturing method for the electrostatic chuck of this embodiment. [Figure 6] This diagram illustrates the relationship between the area ratio of the bonding layer compound in the first interface region and the evaluation results. [Figure 7] This is an explanatory diagram regarding the peak ratio of X-ray diffraction in the second interface region. [Modes for carrying out the invention]

[0014] <Embodiment> Figure 1 is a schematic perspective view showing the external appearance of the electrostatic chuck (bonding body) 1 of the first embodiment. Figure 2 is a schematic cross-sectional view of the electrostatic chuck 1. The electrostatic chuck 1 of this embodiment is, for example, provided in an etching apparatus and is a holding device that holds a wafer W by attracting it with electrostatic force, and can also be described as a semiconductor manufacturing apparatus. As shown in Figure 1, the electrostatic chuck 1 comprises a ceramic member (first member) 10 made of ceramic, a metal member (second member) 20 made of metal, and a bonding layer 30. In the electrostatic chuck 1, the ceramic member 10, the bonding layer 30, and the metal member 20 are stacked in the z-axis direction (vertical direction). In the electrostatic chuck 1, the ceramic member 10 and the metal member 20 are bonded via the bonding layer 30.

[0015] The ceramic member 10 is a roughly circular plate-like member made of alumina (Al2O3). The diameter of the ceramic member 10 is, for example, about 50 mm to 500 mm (usually about 200 mm to 350 mm), and the thickness of the ceramic member 10 is, for example, about 1 mm to 10 mm.

[0016] As shown in Figure 2, the ceramic member 10 is formed by combining two disc-shaped parts, an upper part 11 and a lower part 12, with different areas, along the lamination direction. As shown in Figure 2, the upper part 11 is located on the positive z-axis side of the ceramic member 10. In the planar direction, the area of ​​the upper part 11 is smaller than the area of ​​the lower part 12. The ceramic forming the ceramic member 10 may be aluminum nitride (AlN), zirconia (ZrO2), silicon nitride (Si3N4), silicon carbide (SiC), yttria (Y2O3), etc.

[0017] A disc-shaped chuck electrode 100 is positioned inside the upper part 11. The chuck electrode 100 in this embodiment is made of a conductive material (for example, tungsten or molybdenum). The chuck electrode 100 generates an electrostatic attraction (adsorption force) when power is supplied from a power source (not shown). Due to the electrostatic attraction, the wafer W is adsorbed and fixed to the mounting surface, which is the upper surface of the ceramic member 10.

[0018] The metal member 20 is a substantially circular planar plate-like member formed of stainless steel. The diameter of the metal member 20 is, for example, about 220 mm to 550 mm (usually 220 mm to 350 mm), and the thickness of the metal member 20 is, for example, about 20 mm to 40 mm. Inside the metal member 20, as shown in FIG. 2, a refrigerant flow path 200 is formed. When a refrigerant such as a fluorine-based inert liquid or water flows through the refrigerant flow path 200, the ceramic member 10 is cooled through the bonding layer 30, and the wafer W placed on the ceramic member 10 is cooled. Note that the type of metal forming the metal member 20 may be copper (Cu), aluminum (Al), an aluminum alloy, titanium (Ti), a titanium alloy, or the like.

[0019] The bonding layer 30 is disposed between the ceramic member 10 and the metal member 20 and bonds the ceramic member 10 and the metal member 20. In the present embodiment, the bonding layer 30 contains either indium (In) or tin (Sn) as a main component. Note that the main component in the present embodiment refers to a component containing 85 wt% or more. Further, the bonding layer 30 contains any one of Ti, hafnium (Hf), and zirconium (Zr) and a compound thereof (hereinafter also referred to as a "bonding layer compound"). The bonding layer compound in the present embodiment includes an oxide, a reactant with the ceramic member 10 (first member), and a compound (solid solution, intermetallic compound) with either In or Sn.

[0020] FIG. 3 is an explanatory diagram of a first interface region AR1 formed between the ceramic member 10 and the bonding layer 30, and a second interface region AR2 formed between the metal member 20 and the bonding layer 30. FIG. 3 shows an enlarged cross-sectional view of the region RG in FIG. 2. The ceramic member 10, the metal member 20, and the bonding layer 30 of the present embodiment are each prepared separately and joined by firing. The first interface region AR1 formed by firing is a boundary region where the ceramic forming the ceramic member 10 reacts with the reactive metal contained in the bonding layer 30. The second interface region AR2 is a boundary region where the metal forming the metal member 20 and In or the like forming the bonding layer 30 are mixed together.

[0021] FIG. 4 is an explanatory diagram regarding the definition of the first interface region AR1. FIG. 4 shows an enlarged cross-sectional view of the first interface region AR1. The boundary BD between the ceramic member 10 and the bonding layer 30 may appear as a curved surface (a curve in the cross-section) instead of necessarily being a plane (a straight line in the cross-section) perpendicular to the stacking direction, as shown in FIG. 4. In this case, in the present embodiment, 10 points Pt on the boundary BD are acquired at equal intervals along the direction perpendicular to the stacking direction. The least squares method is used for the 10 acquired points Pt, and a virtual plane PL is calculated. The region formed between the plane spaced apart from the virtual plane PL by a distance L1 on the ceramic member 10 side and the virtual plane PL is determined as the first interface region AR1. Note that the method for determining the second interface region AR2 is also a region formed between a virtual plane and a plane spaced apart from the virtual plane by a predetermined distance on the metal member 20 side, similar to the first interface region ARl.

[0022] In the present embodiment, in the first interface region AR1, the area ratio occupied by the bonding layer compound is 6% or more and 60% or less. In addition, in the first interface region AR1, in addition to the bonding layer compound, simple metals such as In and pores are present. In the first interface region AR1, it is more preferable that the area ratio occupied by the bonding layer compound is 6% or more and 30% or less.

[0023] Figure 5 is a flowchart of the manufacturing method for the electrostatic chuck 1 of this embodiment. In the manufacturing flow shown in Figure 5, first, the ceramic member 10 and the metal member 20 are prepared as separate, unjoined members (step S1). The chuck electrode 100 is placed inside the ceramic member 10 before joining. Also, the refrigerant flow path 200 is formed in the metal member 20 before joining.

[0024] Step S2: A bonding paste, which will form the bonding layer, is printed on one surface of the prepared ceramic member 10. The bonding paste mainly consists of In or Sn, with 0.05 wt% to 12 wt% of Ti, Hf, or Zr. Step S3: The ceramic member 10 with the bonding paste printed on it is dried. The drying process is carried out, for example, in air at 70 degrees Celsius (°C) for 30 minutes. Next, the ceramic member 10 after drying is baked (Step S4). The baking process is carried out, for example, in a vacuum at a temperature of 400°C to 600°C for 30 minutes.

[0025] In step S5, a coating of gold (Au) or the like is applied to one surface of the metal member 20 prepared in step S1. In the coating process, for example, one of the metals or alloys thereof, such as Au, silver (Ag), Cu, platinum (Pt), and palladium (Pd), is deposited in a thickness of 0.5 μm to 1.0 μm. As a method other than deposition, the coating may also be performed by plating or sputtering. The layer of metal or alloy formed on the surface of the metal member 20 by the coating process corresponds to the metal coating layer. Annealing is performed on the metal member 20 after the coating process (step S6). The annealing process is performed, for example, in a vacuum at a temperature of 200°C to 400°C.

[0026] In step S4, the ceramic member 10 that has been baked is joined to the metal member 20 that has been annealed in step S6 (step S7). The joining process is carried out by firing, for example, in a vacuum at a temperature of 200°C to 600°C, with the side of the pair of surfaces of the ceramic member 10 on which the joining paste is printed and the side of the pair of surfaces of the metal member 20 that has been coated in contact. At this time, the joining may be carried out with an In foil interposed between the ceramic member 10 and the metal member 20. The atmosphere during firing may be a nitrogen atmosphere or an argon (Ar) atmosphere. The electrostatic chuck 1 is manufactured by processing the joined body to the dimensions after the joining process.

[0027] Figure 6 is an explanatory diagram illustrating the relationship between the area ratio of the bonding layer compound in the first interface region AR1 and the evaluation results in Examples 1-17 and Comparative Examples 1-6. As shown in Figure 6, each sample was evaluated on a four-point scale from A to D in the "Judgment" column based on three results: "adhesion strength," "fracture surface" which is the fracture mode of the fracture surface, and "appearance" of the bonding paste surface after baking (step S4 in Figure 5). The composition ratio (wt%) of the bonding paste for each sample is as shown in Figure 6.

[0028] The adhesion strength is a value obtained from an adhesion strength test of the first interface region AR1 using a φ10 mm, 10 mm long SUS round bar. In the adhesion strength test, a cantilever bending strength test is performed on a sample in which a paste such as In-Ti is printed, dried, and then baked onto a ceramic. For the evaluation of the fracture surface, the area ratio of the remaining In or Sn on the fracture surface when fractured is calculated by image processing, and the calculated area ratio is evaluated in four stages from A to D as shown below. Note that the strength of intermetallic compounds is lower than the strength of In and Sn, so if the bonding layer 30 contains a lot of intermetallic compounds, the part of the intermetallic compound with the lowest strength will fracture, and the fracture surface will contain a lot of intermetallic compounds. On the other hand, if the content of intermetallic compounds is low, the parts of the softer metals, In and Sn, will fracture. In other words, the higher the proportion of In or Sn contained in the fracture surface, the lower the remaining rate of intermetallic compounds, and the higher the strength of the bonding layer 30. Therefore, a higher area ratio of In or Sn on the fracture surface is preferable. A: Survival rate of 60% or more B: Survival rate between 30% and less than 60% C: Survival rate greater than 0% but less than 30% D: Survival rate is 0%

[0029] The appearance shown is that of the bonding paste after baking, before the ceramic member 10 and the metal member 20 are joined. When the active metal, such as Ti, oxidizes, a cloudiness associated with oxidation occurs in the appearance. Since oxidation of the active metal reduces the bonding strength of the bonding layer 30, it is preferable that the appearance has a metallic luster without oxidation of the active metal. In the appearance evaluation, "metallic luster" or "cloudiness" with some cloudiness was judged as acceptable. Note that the baking treatment of all samples shown in Figure 6 was carried out at 600°C for 30 minutes under a vacuum atmosphere. The area ratio of the bonding layer compound was calculated as the area ratio of the bonding layer compound in the first interface region AR1 when the distance L1 shown in Figure 4 was set to 15 μm.

[0030] In the sample evaluation shown in Figure 6, samples were judged as passing grades A, B, or C if the fracture surface evaluation was B or higher and the appearance was metallic or cloudy. On the other hand, samples were judged as failing grade D if the fracture surface evaluation was C or lower, or if the appearance was unacceptable (oxidized or cloudy).

[0031] As shown in Figure 6, in the samples of Examples 1 to 17, where the area ratio of the bonding layer compound in the first interface region AR1 was 6% or more and 60% or less, the fracture surface evaluation was A or B, indicating a pass. In particular, in the samples of Examples 1 to 12, where the area ratio was 6% or more and 30% or less, the appearance was "metallic luster" and the sample evaluation was A or B. On the other hand, in Comparative Examples 1 to 4, where the area ratio was less than 6%, the fracture surface evaluation was C or D, and the sample evaluation was D. Furthermore, in Comparative Examples 5 and 6, where the area ratio was more than 60%, although the fracture surface evaluation was B, oxidation was confirmed in the appearance, resulting in "oxidation and cloudiness," and the sample evaluation was D. The adhesion strength of the samples of Comparative Examples 1 to 6 was less than 20 MPa, which was lower than the adhesion strength of Examples 1 to 17, which was 20 MPa or more.

[0032] Figure 7 is an explanatory diagram of the X-ray diffraction (XRD) peak ratios of the second interface region AR2 in Examples 18-32 and Comparative Examples 7-9. In Figure 7, the "peak ratio" is shown as the sum of the peak intensities of the intermetallic compounds relative to the XRD peaks of In or Sn in the second interface region AR2. Also in Figure 7, the "bonding layer compound area ratio (%)" is shown as the area ratio of the bonding layer compound in the first interface region AR1, the "coating (μm)" represents the type and thickness of the metal coating layer deposited during the coating treatment (step S5 in Figure 5) when manufacturing the metal member 20, the "preheat treatment (°C)" represents the annealing temperature in the annealing treatment (step S6) after the coating treatment, and the "thermal conductivity test result" is shown as the result of the thermal conductivity test. A small "peak ratio" indicates that there is a small amount of brittle intermetallic compound remaining, which is a desirable condition. For the "thermal conduction test evaluation," each sample of the bonded material was subjected to 1000 cycles of cooling and heating from -40°C to 110°C. The samples were then placed on a hot plate heated to 100°C to evaluate their thermal conduction. In the thermal conduction test, the surface temperature and temperature distribution of the bonded material were measured using an infrared thermometer, and the results were evaluated as follows. A: The temperature distribution across the entire surface reached 100°C within 2 seconds. B: Within 2 seconds, the temperature of a portion of the surface reached 100°C. C: No part of the entire surface reached 100°C within 2 seconds.

[0033] In each of the samples shown in Figure 7, Examples 18-32 and Comparative Examples 7-9, a paste consisting of In or Sn and Ti was printed onto the bonding surface of the ceramic member 10 before bonding (step S2 in Figure 5), dried (step S3), and then baked at 600°C for 30 minutes (step S4). The composition ratio (wt%) of the bonding paste for each sample is as shown in Figure 7, and all samples except Comparative Example 9 contain the same proportion of Ti as the active metal, 2.00 wt%.

[0034] Examples 18-32, where the "peak ratio" in Figure 7 (calculated by dividing the sum of the peak intensities of each intermetallic compound in XRD by the peak intensity of In or Sn) was less than 0.7, received a "thermal conduction test evaluation" of A or B. Of these, Examples 18-21, with a "peak ratio" of less than 0.2, received an excellent "thermal conduction test evaluation" of A. On the other hand, Comparative Examples 7-9, with a "peak ratio" of 0.7 or higher, received a "thermal conduction test evaluation" of C.

[0035] As described above, in the electrostatic chuck 1 of this embodiment, the bonding layer 30 is positioned between the ceramic member 10 and the metal member 20, and bonds the ceramic member 10 and the metal member 20. The bonding layer 30 mainly contains either In or Sn. The bonding layer 30 contains one of Ti, Hf, or Zr and a bonding layer compound formed from these. In the first interface region AR1 formed between the ceramic member 10 and the bonding layer 30, the area ratio occupied by the bonding layer compound is 6% or more and 60% or less. In the bonding layer 30 of this embodiment, the bonding layer 30 contains In or Sn, which have poor wettability with respect to the ceramic member 10, and a bonding layer compound formed from one of the active metals Ti, Hf, or Zr. The area ratio of the bonding layer compound in the first interface region AR1 is 6% or more and 60% or less. In other words, because a certain amount of the bonding layer compound containing the active metal is present in the first interface region, the wettability of the bonding layer 30, which is mainly composed of In or Sn, to the ceramic member 10 is improved, and the bonding performance between the ceramic member 10 and the bonding layer 30 is enhanced. Furthermore, because In and Sn have low melting points, the ceramic member 10 and the metal member 20 are bonded at low temperatures. Since In and Sn are soft metals, residual stress in the bonded body caused by the difference in thermal expansion coefficients is reduced. As a result, the bonding performance between the ceramic member 10 (first member) and the metal member 20 (second member) is enhanced.

[0036] Furthermore, in Examples 1 to 12 shown in Figure 6, the area ratio occupied by the bonding layer compound in the first interface region AR1 is between 6% and 30%. In this embodiment, if the content of active metals such as Ti is high, there is a risk of oxidation of the active metals, but by limiting the upper limit of the area ratio in the first interface region AR1, oxidation of the active metals is suppressed. As a result, the bonding performance between the ceramic member 10 and the bonding layer 30 is improved.

[0037] Furthermore, in Examples 18 to 32 shown in Figure 7, the "peak ratio" in Figure 7, obtained by dividing the sum of the peak intensities of each intermetallic compound in XRD by the peak intensity of In or Sn, was less than 0.7. From this, it can be seen that in this embodiment, the proportion of intermetallic compounds present in the second interface region AR2 is small compared to In or Sn, which are the main components of the bonding layer. By limiting the presence of brittle intermetallic compounds in the second interface region AR2, the strength of the bonding layer 30 is improved.

[0038] <Modified form of this embodiment> The present invention is not limited to the embodiments described above, and can be implemented in various forms without departing from its spirit, for example, the following modifications are also possible.

[0039] In the above embodiment, the bonding layer 30 contains either In or Sn as its main component, and also contains one of Ti, Hf, or Zr and a bonding layer compound formed from these, and is deformable within the range of a bond where the area ratio of the bonding layer compound in the first interface region AR1 is 6% or more and 60% or less. The type of metal and the proportion of metal contained in the bonding layer 30 can be varied, for example, as shown in Examples 1 to 32 in Figures 6 and 7. In the above embodiment, the second member bonded to the ceramic member 10 via the bonding layer 30 was a metal member 20, but it may also be a ceramic member formed from ceramic. In this case, since the bonding layer compound is formed to have an area ratio of 6% or more and 60% or less in the second interface region AR2, the bonding performance between the bonding layer 30 and the metal member 20 (second member) is improved.

[0040] The manufacturing flow of the electrostatic chuck 1 shown in Figure 5 is an example of a manufacturing flow for a bonded body in which the bonding layer compound in the first interface region AR1 is 6% or more and 60% or less. The bonded body may be manufactured by a manufacturing method other than the manufacturing flow shown in Figure 5. For example, the temperature and atmosphere conditions in the drying treatment (step S3), baking treatment (step S4), annealing treatment (step S6), and bonding treatment (step S7) can be modified within the scope of known technology. The component ratio of the bonding paste printed in the printing treatment (step S2) can also be modified within the range in which the area ratio of the bonding layer compound in the first interface region AR1 is 6% or more and 60% or less. The type of metal coated in the coating treatment (step S5) and the thickness of the metal can also be modified within the range in which the sum of the peak intensities of the intermetallic compounds in the X-ray diffraction of the second interface region is less than 0.7 of the peak intensity of In or Sn.

[0041] In the above embodiment, the electrostatic chuck 1 was both a bonding body and a semiconductor manufacturing apparatus, but the relationship between the bonding body and the semiconductor manufacturing apparatus can be modified. For example, the semiconductor manufacturing apparatus may include an electrostatic chuck, a power supply that supplies power to the chuck electrode 100 of the electrostatic chuck, and a refrigerant supply unit that supplies refrigerant to the refrigerant flow path 200 of the electrostatic chuck. In this case, the electrostatic chuck may include a bonding body and an electrode member in which the chuck electrode 100 is disposed. In this case, the bonding body may include a ceramic member (first member) 10, a second member made of ceramic or metal, and a bonding layer 30 disposed between the ceramic member 10 and the second member.

[0042] The embodiments of this specification have been described above based on the embodiments and modifications described above. The embodiments described above are for the purpose of facilitating understanding of this specification and do not limit it. This specification may be modified and improved without departing from its spirit and the scope of the claims, and equivalents thereof are included in this specification. Furthermore, any technical features that are not described as essential in this specification may be deleted as appropriate.

[0043] The present invention can also be realized in the following forms. [Application Example 1] A joint, A first component made of ceramic, A second member made of ceramic or metal, A bonding layer disposed between the first member and the second member, the bonding layer mainly composed of either In (indium) or Sn (tin), and containing one of Ti (titanium), Hf (hafnium), or Zr (zirconium), Equipped with, The bonding layer has a compound containing one of Ti, Hf, and Zr. In a cross-section along the lamination direction in which the first member, the bonding layer, and the second member are laminated, the area ratio occupied by the compound in the first interface region formed between the first member and the bonding layer is 6% or more and 60% or less. A joint characterized by the following features. [Application Example 2] The joint described in Application Example 1, The aforementioned area ratio is between 6% and 30%. A joint characterized by the following features. [Application Example 3] A joint described in Application Example 1 or Application Example 2, The second member is made of metal and has a metal coating layer on its surface. The metal coating layer forms an intermetallic compound with In or Sn contained in the bonding layer. In a cross-section along the stacking direction, the sum of the peak intensities of the intermetallic compounds in the X-ray diffraction of the second interface region formed between the second member and the bonding layer is less than 0.7 of the peak intensity of In or Sn. A joint characterized by the following features. [Application Example 4] Semiconductor manufacturing equipment, The joint comprises one of the examples described in Application Example 1 to Application Example 3, A semiconductor manufacturing apparatus characterized by the following features. [Explanation of symbols]

[0044] 1…Electrostatic chuck (joint) 10…Ceramic component (first component) 11…Top 12...Lower part 20…Metal component (second component) 30...Joining layer 100... Chuck electrode 200... Refrigerant flow path AR1...first interface area AR2…Second interface area BD…boundary L1…distance PL...Virtual plane Pt…point RG…area W...wafer

Claims

1. A joint, A first member made of ceramic, A second member made of ceramic or metal, A bonding layer disposed between the first member and the second member, the bonding layer mainly composed of either In (indium) or Sn (tin), and containing one of Ti (titanium), Hf (hafnium), or Zr (zirconium), Equipped with, The bonding layer has a compound containing one of Ti, Hf, and Zr. In a cross-section along the lamination direction in which the first member, the bonding layer, and the second member are laminated, the area ratio occupied by the compound in the first interface region formed between the first member and the bonding layer is 6% or more and 60% or less. A joint characterized by the following features.

2. The joint according to claim 1, The aforementioned area ratio is 6% or more and 30% or less. A joint characterized by the following features.

3. The joint according to claim 1, The second member is made of metal and has a metal coating layer on its surface. The metal coating layer forms an intermetallic compound with In or Sn contained in the bonding layer. In a cross-section along the stacking direction, the sum of the peak intensities of the intermetallic compounds in the X-ray diffraction of the second interface region formed between the second member and the bonding layer is less than 0.7 of the peak intensity of In or Sn. A joint characterized by the following features.

4. Semiconductor manufacturing equipment, A joint comprising the one described in any one of claims 1 to 3, A semiconductor manufacturing apparatus characterized by the following features.

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