Substrate processing method

Abstract

This invention provides a substrate processing method for properly processing substrates. [Solution] The substrate processing method processes the substrate W in a processing space 5. The processing space 5 is defined by a heat plate 3 and a lid 4. The lid 4 is positioned above the heat plate 3. The substrate processing method comprises a first heat treatment step. In the first heat treatment step, the lid 4 is positioned at a first position D1. The lid 4 is in contact with or close to the heat plate 3. The substrate W is placed on the heat plate 3. Heat treatment is performed on the substrate W placed on the heat plate 3. The substrate processing method comprises a second heat treatment step. In the second heat treatment step, the lid 4 is positioned at a second position D2. The second position D2 is higher than the first position D1. A first gap 7a is formed. The first gap 7a is located between the heat plate 3 and the lid 4. The lid 4 has an exhaust port 29. Gas from the processing space 5 is discharged from the exhaust port 29. Heat treatment is performed on the substrate W placed on the heat plate 3.

Description

Technical Field

[0001] This invention relates to a substrate processing method for processing a substrate. The substrate is, for example, any one of a semiconductor wafer, a substrate for a liquid crystal display, a substrate for an organic EL (Electroluminescence), a substrate for an FPD (Flat Panel Display), a substrate for an optical display, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a magneto-optical disk, a substrate for a photomask, and a substrate for a solar cell.

Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus. Hereinafter, the reference numerals described in Patent Document 1 will be represented in parentheses. Refer to FIG. 4 of Patent Document 1. The substrate processing apparatus of Patent Document 1 heat-treats a substrate (S). The substrate processing apparatus of Patent Document 1 includes a heat treatment plate (1) and a lid (91). The substrate (S) is placed on the heat treatment plate (1). The heat treatment plate (1) and the lid (9) define a processing chamber (3). The lid (9) moves up and down. For example, when the lid (9) is in contact with the heat treatment plate (1), the processing chamber (3) is sealed. For example, when the lid (9) is close to the heat treatment plate (1), the processing chamber (3) is substantially sealed. When the lid (9) rises, the processing chamber (3) is opened. The lid (9) has an exhaust port (95). The exhaust port (95) discharges the gas in the processing chamber (3).

[0003] The substrate processing apparatus of Patent Document 1 performs heat treatment on the substrate (S) over a first period of time. The first period of time is long enough to complete the heat treatment of the substrate (S) in the processing chamber (3). When performing heat treatment on the substrate (S), the substrate (S) is placed on the heat treatment plate (1). The lid (9) seals the processing chamber (3). The exhaust port (95) does not exhaust the processing chamber (3). Therefore, in the heat treatment, no air flow is formed in the processing chamber (3).

[0004] After the first hour has elapsed, the substrate processing apparatus of Patent Document 1 completes the heat treatment of the substrate (S). After the heat treatment of the substrate (S) is completed, the substrate processing apparatus of Patent Document 1 ventilates the processing chamber (3) for a second hour. The second hour is long enough to complete the ventilation of the processing chamber (3). Specifically, the lid (9) rises slightly, creating a small gap (D2) between the lid (9) and the heat treatment plate (1). The exhaust port (95) exhausts the processing chamber (3) and introduces outside air into the processing chamber (3) from outside through the gap (D2). Therefore, when ventilating the processing chamber (3), the gas inside the processing chamber (3) does not leak to the outside of the processing chamber (3).

[0005] After two hours have elapsed, ventilation of the processing chamber (3) is terminated. After ventilation of the processing chamber (3) is terminated, the lid (9) rises further to open the processing chamber (3). Subsequently, the substrate (S) is removed from the processing chamber (3) by a substrate transport robot. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Application Publication No. 11-317339 [Overview of the project] [Problems that the invention aims to solve]

[0007] Even in the conventional examples described above, it can be difficult to properly process the substrate. For example, it can be difficult to process the substrate uniformly across its entire surface. It can be difficult to process the substrate at a uniform temperature across its entire surface. After processing the substrate, the coating film on the substrate may have an uneven thickness.

[0008] This invention has been made in view of these circumstances, and aims to provide a substrate processing method for appropriately processing substrates. [Means for solving the problem]

[0009] We diligently researched the means to achieve the above objective. As a result, the first point was discovered. Point 1: When processing substrates in a processing space while exhausting the processing space, the uniformity of the thickness of the coating film on the substrate may improve.

[0010] However, a second finding was discovered. Second point: When processing substrates in a processing space while simultaneously exhausting the space, a new problem arises. The new problem is that it is difficult to process the substrate at a uniform temperature across its entire surface.

[0011] Therefore, we further diligently researched means to achieve the above objectives. Specifically, we considered means to solve new problems.

[0012] The present invention is based on these considerations. The present invention has the following configuration. The present invention is a substrate processing method, which processes a substrate in a processing space defined by a heat plate and a lid above the heat plate, comprising: a first heat treatment step of arranging the lid in a first position so that the lid is in contact with or close to the heat plate and performing heat treatment on the substrate placed on the heat plate; and a second heat treatment step of arranging the lid in a second position higher than the first position so that a first gap is formed between the lid and the heat plate, the gas in the processing space is discharged from the exhaust port of the lid and performing heat treatment on the substrate placed on the heat plate.

[0013] The substrate processing method involves processing the substrate in a processing space. The processing space is defined by a heat plate and a lid. The lid is positioned above the heat plate.

[0014] The substrate processing method comprises a first heat treatment step. In the first heat treatment step, the lid is positioned in a first position. In the first heat treatment step, the lid is in contact with the heat plate, or is in close proximity to the heat plate. In the first heat treatment step, the substrate is placed on the heat plate. In the first heat treatment step, heat treatment is performed on the substrate placed on the heat plate. Therefore, it is easy to retain gas near the substrate on the heat plate in the first heat treatment step. Thus, it is easy to make the temperature of the substrate uniform in the first heat treatment step.

[0015] The substrate processing method comprises a second heat treatment step. In the second heat treatment step, the lid is positioned in a second position, which is higher than the first position. In the second heat treatment step, a first gap is formed, located between the heat plate and the lid. The lid has an exhaust port. In the second heat treatment step, gas from the processing space is discharged through the exhaust port. In the second heat treatment step, heat treatment is performed on the substrate placed on the heat plate. Therefore, it is easy to form an airflow near the substrate on the heat plate in the second heat treatment step. Thus, it is easy to make the thickness of the coating film on the substrate uniform in the second heat treatment step.

[0016] In summary, this substrate processing method includes a first heat treatment step and a second heat treatment step. It is easy to make the substrate temperature uniform in the first heat treatment step. It is also easy to make the thickness of the coating film on the substrate uniform in the second heat treatment step. Therefore, this substrate processing method ensures proper processing of the substrate.

[0017] In this substrate processing method, it is preferable that the second heat treatment step is performed after the first heat treatment step. Therefore, it is easy to perform both the first and second heat treatment steps.

[0018] In this substrate processing method, it is preferable that the first heat treatment step is performed after the second heat treatment step. Therefore, it is easy to perform both the first and second heat treatment steps.

[0019] In this substrate processing method, it is preferable that the heat treatment in the first heat treatment step is for making the temperature of the substrate uniform. Therefore, it is easy to make the temperature of the substrate uniform in the first heat treatment step.

[0020] In this substrate processing method, it is preferable that the heat treatment in the second heat treatment step is for making the thickness of the coating film on the substrate uniform. Therefore, it is easy to make the thickness of the coating film on the substrate uniform in the second heat treatment step.

[0021] In this substrate processing method, in the second heat treatment step, it is preferable that an air flow is formed in the vicinity of the substrate on the heat plate. Therefore, it is easy to make the thickness of the coating film on the substrate uniform in the second heat treatment step.

[0022] In this substrate processing method, in the second heat treatment step, it is preferable that the first gap is located at the same height position as the substrate on the heat plate. Therefore, it is easy to form an air flow in the vicinity of the substrate on the heat plate.

[0023] In this substrate processing method, in the second heat treatment step, it is preferable that the first gap is small enough that the substrate cannot pass through the first gap. Therefore, it is easy to form an air flow in the vicinity of the substrate on the heat plate.

[0024] In this substrate processing method, it is preferable that the exhaust port is located at a position higher than the substrate on the heat plate. Therefore, it is easy to form an air flow in the vicinity of the substrate on the heat plate in the second heat treatment step.

[0025] In this substrate processing method, in the first heat treatment step, it is preferable to exhaust the gas in the processing space from the exhaust port. Therefore, in the first heat treatment step, the substrate is processed more appropriately.

[0026] In this substrate processing method, it is preferable that the lid has an inlet. Therefore, in the first heat treatment step, it is easy to discharge the gas in the processing space from the exhaust port.

[0027] In this substrate processing method, in the first heat treatment step, it is preferable that the inlet is disposed at a position higher than the substrate on the heat plate. Therefore, in the first heat treatment step, it is difficult for the gas to flow in the vicinity of the substrate on the heat plate. That is, in the first heat treatment step, it is easy to retain the gas in the vicinity of the substrate on the heat plate. Thus, it is easy to make the temperature of the substrate uniform in the first heat treatment step.

[0028] In this substrate processing method, it is preferable to include a transport step of disposing the lid at a third position higher than the second position to form a second gap between the heat plate and the lid, and passing the substrate through the second gap to transport the substrate between the processing space and the space outside the processing space. In the transport step, the lid is disposed at the third position. The third position is higher than the second position. In the transport step, the second gap is formed. The second gap is located between the heat plate and the lid. In the transport step, the substrate is transported between the processing space and the space outside the processing space. In the transport step, the substrate passes through the second gap. Therefore, it is easy to transport the substrate between the processing space and the space outside the processing space.

[0029] In this substrate processing method, in the transport step, it is preferable that the second gap is as large as the substrate can pass through the second gap. Therefore, it is easy for the substrate to pass through the second gap.

Effect of the Invention

[0030] According to this substrate processing method, the substrate is appropriately processed.

Brief Description of the Drawings

[0031] [Figure 1] It is a plan view of the substrate [Figure 2] It is a side view of the substrate. [Figure 3] This is a side view of the substrate processing apparatus according to the embodiment. [Figure 4] This is a side view of the substrate processing apparatus according to the embodiment. [Figure 5] This is a side view of the substrate processing apparatus according to the embodiment. [Figure 6] This is a plan view of the heat plate. [Figure 7] This is a control block diagram of a substrate processing unit. [Figure 8] This is a flowchart showing the procedure for the substrate processing method of the embodiment. [Figure 9] This flowchart shows the procedure for the substrate processing method of the modified embodiment. [Modes for carrying out the invention]

[0032] The substrate processing method of the present invention will be described below with reference to the drawings.

[0033] <1. Substrate> Figure 1 is a plan view of a substrate W. Examples of substrates W include semiconductor wafers, liquid crystal display substrates, organic electroluminescence (EL) substrates, flat panel display (FPD) substrates, optical display substrates, magnetic disk substrates, optical disk substrates, magneto-optical disk substrates, photomask substrates, and solar cell substrates. The substrate W has a thin, flat shape. In plan view, the substrate W has a roughly circular shape.

[0034] The substrate W includes a central portion Wa and a peripheral portion Wb. Figure 1 illustrates the boundary A1 between the central portion Wa and the peripheral portion Wb. The peripheral portion Wb is located outside the central portion Wa.

[0035] Figure 2 is a side view of the substrate W. For example, a coating film B is formed on the substrate W. The coating film B includes, for example, at least one of a photosensitive film, a resist film, an anti-reflective film, an insulating film, and a protective film. The coating film B includes, for example, an organic solvent.

[0036] The coated film B has a central portion Ba and a peripheral portion Bb. The central portion Ba is located on the central portion Wa. The peripheral portion Bb is located outside the central portion Ba. The peripheral portion Bb is located on the peripheral portion Wb.

[0037] Figure 2 shows the thicknesses Ca and Cb. Thickness Ca is the thickness of the central part Ba. Thickness Cb is the thickness of the peripheral part Bb. Preferably, thickness Cb is equal to thickness Ca.

[0038] When thicknesses Ca and Cb are not distinguished, they are appropriately referred to as "thickness C of coating film B".

[0039] <2. Overview of Substrate Processing Equipment> Figures 3, 4, and 5 are side views of the substrate processing apparatus 1 according to the embodiment. The substrate processing apparatus 1 performs processing on the substrate W. The processing performed by the substrate processing apparatus 1 on the substrate W is, for example, heat treatment. The substrate W has, for example, a coated film B.

[0040] The substrate processing apparatus 1 comprises a heat plate 3 and a lid 4. The heat plate 3 and lid 4 define a processing space 5. The substrate processing apparatus 1 processes the substrate W in the processing space 5.

[0041] The heat plate 3 extends horizontally in the X direction. The lid 4 is positioned above the heat plate 3. The lid 4 has a bowl shape. The heat plate 3 defines the bottom of the processing space 5. The lid 4 defines the top and sides of the processing space 5.

[0042] The lid 4 is configured to move in the vertical direction Z relative to the heat plate 3. The lid 4 is configured to move to a first position D1, a second position D2, and a third position D3.

[0043] Figure 3 shows the lid 4 in the first position D1. For example, when the lid 4 is in the first position D1, the lid 4 is in contact with the heat plate 3.

[0044] Figure 4 shows the lid 4 in the second position D2. The second position D2 is higher than the first position D1. The second position D2 is located above the first position D1. When the lid 4 is in the second position D2, the lid 4 does not come into contact with the heat plate 3. The lid 4 is separated from the heat plate 3. When the lid 4 is in the second position D2, a gap 7 is formed.

[0045] Gap 7 is located between the heat plate 3 and the lid 4. Gap 7 connects the processing space 5 with the space outside the processing space. Hereafter, the "space outside the processing space 5" will be referred to as the "external space 6" as appropriate.

[0046] The first position D1 is lower than the second position D2. As described above, when the lid 4 is in the first position D1, the lid 4 may be in contact with the heat plate 3. When the lid 4 is in contact with the heat plate 3, no gap 7 is formed. For example, when the lid 4 is in the first position D1, no gap 7 is formed.

[0047] Figure 5 shows the lid 4 in the third position D3. The third position D3 is higher than the first position D1. The third position D3 is located above the first position D1. When the lid 4 is in the third position D3, the lid 4 does not come into contact with the heat plate 3. When the lid 4 is in the third position D3, a gap 7 is formed.

[0048] The third position D3 is higher than the second position D2. The third position D3 is located above the second position D2. The gap 7 when the lid 4 is in the third position D3 is larger than the gap 7 when the lid 4 is in the second position D2.

[0049] In the following, the gap 7 when the lid 4 is in the second position D2 will be referred to as the "first gap 7a". The gap 7 when the lid 4 is in the third position D3 will be referred to as the "second gap 7b". The second gap 7b is larger than the first gap 7a. The second gap 7b is longer in the vertical direction Z than the first gap 7a.

[0050] <3. Heat Plate 3> Refer to Figure 3-5. One substrate W is placed on the heat plate 3. The heat plate 3 supports the substrate W in a nearly horizontal position.

[0051] Figure 6 is a plan view of the heat plate 3. The heat plate 3 has a circular shape, for example, in a plan view.

[0052] Figure 6 shows the substrate W as a dashed line. In a plan view, the heat plate 3 is larger than the substrate W.

[0053] The heat plate 3 has an upper surface 11. The substrate W is placed on the upper surface 11.

[0054] More specifically, the upper surface 11 has a substrate mounting surface 11a and a lid mounting surface 11b. Figure 6 illustrates the boundary A2 between the substrate mounting surface 11a and the lid mounting surface 11b. The substrate mounting surface 11a has a circular shape in plan view. The substrate W is placed on the substrate mounting surface 11a. In plan view, the substrate W overlaps with the substrate mounting surface 11a. The lid mounting surface 11b is located outside the substrate mounting surface 11a. The lid mounting surface 11b has an annular shape in plan view. In plan view, the lid mounting surface 11b does not overlap with the substrate W.

[0055] Refer to Figure 3-5. The top surface 11 defines the bottom of the processing space 5.

[0056] The top surface 11 is approximately horizontal. The substrate mounting surface 11a is approximately horizontal. The lid mounting surface 11b is approximately horizontal.

[0057] The lid mounting surface 11b is positioned at the same height as the substrate mounting surface 11a.

[0058] For example, the lid mounting surface 11b is molded integrally with the substrate mounting surface 11a.

[0059] The lid mounting surface 11b does not release gas. For example, the lid mounting surface 11b does not have an opening for releasing gas.

[0060] The lid mounting surface 11b does not discharge gas. The lid mounting surface 11b does not draw in gas. For example, the lid mounting surface 11b does not have an opening for discharging gas. The lid mounting surface 11b does not have an opening for drawing in gas.

[0061] The heat plate 3 comprises a plurality of support members 13. When the substrate W is placed on the heat plate 3, the support members 13 support the substrate W. The support members 13 are attached to the heat plate 3. The support members 13 are positioned on the upper surface 11. The support members 13 are positioned on the substrate mounting surface 11a. The support members 13 protrude upward from the upper surface 11. The support members 13 are in contact with the back surface of the substrate W. The support members 13 are, for example, called promixity balls.

[0062] The heat plate 3 includes a plurality of guide members 14. When a substrate W is placed on the heat plate 3, the guide members 14 adjust the position of the substrate W in the horizontal direction X. The guide members 14 are attached to the heat plate 3. The guide members 14 are positioned on the upper surface 11. The guide members 14 are positioned on the substrate mounting surface 11a. The guide members 14 are positioned on the periphery of the substrate mounting surface 11a. The guide members 14 protrude upward from the upper surface 11. The guide members 14 have an inclined surface 14a. The guide members 14 contact the periphery of the substrate W. Specifically, the inclined surface 14a contacts the periphery of the substrate W. The inclined surface 14a allows the periphery of the substrate W to slide downward along the inclined surface 14a. This guides the substrate W to the appropriate position.

[0063] The heat plate 3 includes a temperature control unit 15. The temperature control unit 15 adjusts the temperature of the substrate W on the heat plate 3. The temperature of the substrate W on the heat plate 3 is adjusted to a value in the range of, for example, 100 degrees to 400 degrees.

[0064] The temperature control unit 15 generates heat, for example. The temperature control unit 15 absorbs heat, for example. The temperature control unit 15 is attached to the heat plate 3, for example. The temperature control unit 15 is located inside the heat plate 3, for example. Alternatively, the temperature control unit 15 may be located on the surface of the heat plate 3. For example, heat is transferred between the temperature control unit 15 and the substrate W on the heat plate 3 via the heat plate 3. Alternatively, heat is transferred between the temperature control unit 15 and the substrate W on the heat plate 3 without going through the heat plate 3. The temperature control unit 15 includes, for example, at least one of a heater and a heat exchanger. The heater includes at least one of an electric heating wire, a resistance heater, an electric heater and a lamp heater. The heat exchanger includes, for example, conduits for flowing a heat transfer medium.

[0065] The substrate processing apparatus 1 includes a substrate lifting mechanism 16. The substrate lifting mechanism 16 moves the substrate W in the vertical direction Z relative to the heat plate 3. The substrate lifting mechanism 16 moves the substrate W to the processing position E1 and the transfer position E2.

[0066] Figures 3 and 4 show the substrate W located at processing position E1. Processing position E1 is the position of the substrate W placed on the heat plate 3. When the substrate W is at processing position E1, the substrate W is in contact with the support member 13 and the guide member 14. When the substrate W is at processing position E1, the substrate processing apparatus 1 performs heat treatment on the substrate W.

[0067] Figure 5 shows the substrate W located at the handover position E2. The handover position E2 is higher than the processing position E1. The handover position E2 is located above the processing position E1. When the substrate W is located at the handover position E2, the substrate W does not come into contact with the support member 13 and the guide member 14. When the substrate W is located at the handover position E2, the substrate W is supported by the substrate lifting mechanism 16. Even when the substrate W is located at the handover position E2, the substrate W is in a horizontal position.

[0068] The substrate lifting mechanism 16 comprises a plurality of lifting pins 17. The lifting pins 17 extend in the vertical direction Z. The lifting pins 17 have upper ends. The upper ends of the lifting pins 17 are capable of protruding above the heat plate 3. The upper ends of the lifting pins 17 are capable of contacting the substrate W. The lifting pins 17 penetrate through the heat plate 3. Specifically, the heat plate 3 has a plurality of through holes 12. The lifting pins 17 are inserted into the through holes 12. The lifting pins 17 extend to a position below the heat plate 3.

[0069] The substrate lifting mechanism 16 includes a lifting pin drive unit 18. The lifting pin drive unit 18 includes, for example, at least one of an air cylinder and an electric motor. The lifting pin drive unit 18 supports the lifting pin 17. The lifting pin 17 and the lifting pin drive unit 18 are connected at a position below the heat plate 3. The lifting pin drive unit 18 moves the lifting pin 17 in the vertical direction Z relative to the heat plate 3. The lifting pin drive unit 18 moves the lifting pin 17 to a lower position F1 and an upper position F2.

[0070] Figures 3 and 4 show the lift-up pin 17 located at the lower position F1. When the lift-up pin 17 is at the lower position F1, the substrate W is located at the processing position E1.

[0071] When the lifting pin 17 is in the lower position F1, the upper end of the lifting pin 17 is positioned lower than the upper surface 11 of the heat plate 3. When the lifting pin 17 is in the lower position F1, the lifting pin 17 does not come into contact with the substrate W.

[0072] Figure 5 shows the lifting pin 17 located in the upper position F2. When the lifting pin 17 is in the upper position F2, the substrate W is in the transfer position E2.

[0073] The upper position F2 is higher than the lower position F1. The upper position F2 is located above the lower position F1. When the lift-up pin 17 is in the upper position F2, the upper end of the lift-up pin 17 is positioned higher than the upper surface 11 of the heat plate 3. When the lift-up pin 17 is in the upper position F2, the upper end of the lift-up pin 17 is in contact with the back surface of the circuit board W.

[0074] <4. Lid 4> Refer to Figure 3-5. The lid 4 is equipped with a top plate 21. The top plate 21 defines the upper part of the processing space 5. The top plate 21 extends, for example, in a substantially horizontal direction X.

[0075] The top plate 21 is positioned above the heat plate 3. The top plate 21 is positioned above the substrate W on the heat plate 3.

[0076] Although not shown in the diagram, the top plate 21 has a circular shape in plan view, for example. In plan view, the top plate 21 overlaps with the heat plate 3. In plan view, the top plate 21 has substantially the same area as the heat plate 3.

[0077] In a plan view, the top plate 21 overlaps with the substrate W on the heat plate 3. In a plan view, the top plate 21 is wider than the substrate W on the heat plate 3. The top plate 21 extends outward beyond the substrate W on the heat plate 3.

[0078] The top plate 21 has a central portion 21a and a peripheral portion 21b. The central portion 21a is located above the central portion Wa of the substrate W on the heat plate 3. The peripheral portion 21b is located outside the central portion 21a. The peripheral portion 21b is located above the lid mounting surface 11b.

[0079] The top plate 21 has, for example, a cone shape. The peripheral portion 21b is positioned lower than the central portion 21a. The top plate 21 slopes downward from the central portion 21a towards the peripheral portion 21b. The top plate 21 extends radially outward and downward.

[0080] The lid 4 is provided with a peripheral wall 22. The peripheral wall 22 defines the side of the processing space 5. The peripheral wall 22 extends downward from the peripheral edge 21b. The peripheral wall 22 has a cylindrical shape.

[0081] The peripheral wall 22 is positioned above the heat plate 3. The peripheral wall 22 is configured to contact the heat plate 3. The peripheral wall 22 is positioned outside the substrate W on the heat plate 3. The peripheral wall 22 is positioned above the lid mounting surface 11b. The peripheral wall 22 is configured to contact the lid mounting surface 11b.

[0082] Although not shown in the diagram, the peripheral wall 22 has an annular shape in plan view. The peripheral wall 22 overlaps with the heat plate 3 in plan view. The peripheral wall 22 does not overlap with the substrate W on the heat plate 3 in plan view. The peripheral wall 22 is positioned outside the substrate mounting surface 11a in plan view. The peripheral wall 22 does not overlap with the substrate mounting surface 11a in plan view. The peripheral wall 22 overlaps with the lid mounting surface 11b in plan view.

[0083] The peripheral wall 22 includes an outer wall 23. The outer wall 23 extends downward from the peripheral edge 21b. The outer wall 23 has a cylindrical shape.

[0084] The outer wall 23 has an upper end 23T and a lower end 23B. The upper end 23T is in contact with, for example, the top plate 21. The upper end 23T is in contact with the peripheral edge 21b. The lower end 23B is located below the upper end 23T.

[0085] The peripheral wall 22 includes an inner wall 24. The inner wall 24 is located inside the outer wall 23. The inner wall 24 has a cylindrical shape. The diameter of the inner wall 24 is smaller than the diameter of the outer wall 23. The inner wall 24 does not contact the outer wall 23. The inner wall 24 is separated from the outer wall 23.

[0086] The inner wall 24 has an upper end 24T and a lower end 24B. The upper end 24T does not, for example, contact the top plate 21. The upper end 24T is located below the top plate 21. The upper end 24T does not contact the peripheral edge 21b. The upper end 24T is located below the peripheral edge 21b. The lower end 24B is located below the upper end 24T.

[0087] The upper limit 24T is lower than the upper limit 23T. The upper limit 24T is higher than the lower limit 23B.

[0088] For example, the lower end 24B is lower than the lower end 23B. Alternatively, the lower end 24B may be equal to or higher than the lower end 23B.

[0089] The inner wall 24 is supported, for example, by the outer wall 23. The inner wall 24 is supported by the outer wall 23 via a connecting member (not shown).

[0090] The peripheral wall 22 is provided with a contact member 25. The contact member 25 contacts the heat plate 3. The contact member 25 contacts the upper surface 11. The contact member 25 contacts the lid mounting surface 11b.

[0091] The contact member 25 is positioned below the outer wall 23. The contact member 25 is positioned below the inner wall 24.

[0092] The contact member 25 is supported, for example, by the inner wall 24. The contact member 25 is connected, for example, to the lower end 24B. The contact member 25 may be supported by the outer wall 23. The contact member 25 may be connected to the lower end 23B.

[0093] The contact member 25 is made of, for example, resin. The contact member 25 is made of, for example, synthetic resin.

[0094] For example, when the lid 4 is in the first position D1, the contact member 25 is in contact with the heat plate 3. When the lid 4 is in the second position D2, the contact member 25 is not in contact with the heat plate 3. When the lid 4 is in the third position D3, the contact member 25 is not in contact with the heat plate 3.

[0095] The gap 7 is located between the contact member 25 and the heat plate 3. The gap 7 is located below the contact member 25 and above the heat plate 3. Therefore, when the contact member 25 is in contact with the heat plate 3, the gap 7 is not formed.

[0096] The gap 7 is located between the contact member 25 and the upper surface 11. The gap 7 is located below the contact member 25 and above the upper surface 11.

[0097] The gap 7 is located between the contact member 25 and the lid mounting surface 11b. The gap 7 is located below the contact member 25 and above the lid mounting surface 11b.

[0098] Figure 6 shows the contact member 25 clearly indicated by hatching. The contact member 25 has an annular shape in plan view. The contact member 25 overlaps with the heat plate 3 in plan view. The contact member 25 is positioned outside the substrate W on the heat plate 3. The contact member 25 does not overlap with the substrate W on the heat plate 3 in plan view. The contact member 25 is positioned outside the substrate mounting surface 11a in plan view. The contact member 25 does not overlap with the substrate mounting surface 11a in plan view. The contact member 25 overlaps with the lid mounting surface 11b in plan view.

[0099] In a plan view, the gap 7 is located at the same position as the contact member 25. In a plan view, the gap 7 has an annular shape. The gap 7 is located outside the substrate W on the heat plate 3. The gap 7 surrounds the substrate W on the heat plate 3.

[0100] Refer to Figure 4. The first gap 7a is positioned at the same height as the substrate W on the heat plate 3. For example, in a side view, the substrate W on the heat plate 3 is visible through the first gap 7a.

[0101] Figure 4 shows height positions G0 and G1. Height position G0 is the height of the lower end of the first gap 7a. Height position G1 is the height of the upper end of the first gap 7a.

[0102] Height position G0 is, for example, the height position of the top surface 11. Height position G0 is, for example, the height position of the lid mounting surface 11b. Height position G0 is, for example, equal to the height position of the substrate mounting surface 11a. Height position G1 is the height position of the lower end of the contact member 25 when the lid 4 is in the second position D2. Height position G1 is higher than height position G0.

[0103] When the substrate W is located at the processing position E1, the entire substrate W is positioned at a height equal to or higher than the height position G0. When the substrate W is located at the processing position E1, the entire substrate W is positioned at a height equal to or lower than the height position G1.

[0104] Figure 5 shows height positions G0 and G2. Height position G0 is the height of the lower end of the second gap 7b. Height position G2 is the height of the upper end of the second gap 7b.

[0105] Height position G2 is the height of the lower end of the contact member 25 when the lid 4 is in the third position D3. Height position G2 is higher than height position G0.

[0106] When the substrate W is located at the delivery position E2, the entire substrate W is positioned higher than the height position G0. When the substrate W is located at the delivery position E2, the entire substrate W is positioned at the same height as or lower than the height position G2.

[0107] When the lifting pin 17 is in the upper position F2, the upper end of the lifting pin 17 is positioned higher than the height position G0. When the lifting pin 17 is in the upper position F2, the upper end of the lifting pin 17 is positioned lower than the height position G2.

[0108] Figure 5 shows height position G1 for convenience. Height position G1 is lower than height position G2.

[0109] When the substrate W is located at the handover position E2, the entire substrate W is positioned higher than the height position G1.

[0110] When the lifting pin 17 is in the upper position F2, the upper end of the lifting pin 17 is positioned higher than the height position G1.

[0111] The lid 4 has an inlet 26. The inlet 26 connects the processing space 5 and the external space 6. The inlet 26 is for introducing gas from the external space 6 into the processing space 5. The inlet 26 is open to the external space 6.

[0112] The inlet 26 is located in the surrounding wall 22. The inlet 26 is open to the space outside the surrounding wall 22.

[0113] The inlet 26 is formed in the outer wall 23. For example, the inlet 26 is the gap between the lower end 23B and the lower end 24B.

[0114] The lid 4 has an inlet channel 27 and an outlet channel 28. The inlet channel 27 extends from the inlet 26 to the outlet channel 28. The inlet channel 27 connects the inlet 26 and the outlet channel 28. The outlet channel 28 is open to the processing space 5.

[0115] The introduction channel 27 is, for example, located in the peripheral wall 22. The introduction channel 27 is located between the outer wall 23 and the inner wall 24. The introduction channel 27 is located inside the outer wall 23 and outside the inner wall 24.

[0116] The intake channel 27 extends in the vertical direction Z. The intake channel 27 extends upward from the inlet 26.

[0117] The air outlet 28 is positioned higher than the inlet 26. The air outlet 28 is positioned above the inlet 26.

[0118] The air outlet 28 is located, for example, near the top plate 21. The air outlet 28 is located, for example, near the peripheral edge 21b.

[0119] The air outlet 28 is, for example, the gap between the peripheral edge 21b and the inner wall 24. The air outlet 28 is, for example, the gap between the peripheral edge 21b and the upper end 24T.

[0120] The inlet 26 is positioned lower than the top plate 21. The inlet 26 is positioned higher than the contact member 25.

[0121] The inlet 26 is positioned higher than the heat plate 3. The inlet 26 is positioned higher than the upper surface 11 of the heat plate 3. The inlet 26 is positioned higher than the substrate W on the heat plate 3.

[0122] The air outlet 28 is positioned lower than the top plate 21. The air outlet 28 is positioned higher than the contact member 25.

[0123] The air outlet 28 is positioned higher than the heat plate 3. The air outlet 28 is positioned higher than the upper surface 11 of the heat plate 3. The air outlet 28 is positioned higher than the substrate W on the heat plate 3.

[0124] Although not shown in the diagram, the inlet 26 has a ring shape in plan view. The inlet 26 overlaps with the heat plate 3 in plan view. The inlet 26 is positioned outside the substrate W on the heat plate 3. The inlet 26 does not overlap with the substrate W on the heat plate 3 in plan view.

[0125] The introduction channel 27 has a ring shape in a plan view. The introduction channel 27 overlaps with the heat plate 3 in a plan view. The introduction channel 27 is positioned outside the substrate W on the heat plate 3. The introduction channel 27 does not overlap with the substrate W on the heat plate 3 in a plan view.

[0126] The air outlet 28 has an annular shape in a plan view. The air outlet 28 overlaps with the heat plate 3 in a plan view. The air outlet 28 is positioned outside the substrate W on the heat plate 3. The air outlet 28 does not overlap with the substrate W on the heat plate 3 in a plan view.

[0127] Furthermore, the peripheral wall 22 does not release gas. For example, the peripheral wall 22 does not have an opening for releasing gas.

[0128] The peripheral wall 22 does not discharge gas. For example, the peripheral wall 22 does not have an opening for discharging gas. For example, the peripheral wall 22 does not include an exhaust pipe.

[0129] The lid 4 has an exhaust port 29. The exhaust port 29 discharges the gas from the processing space 5.

[0130] The exhaust port 29 is located on the top plate 21. The exhaust port 29 is located in the central part 21a of the top plate 21. The exhaust port 29 is not located on the peripheral edge 21b of the top plate 21.

[0131] The exhaust port 29 is open to the processing space 5. The exhaust port 29 is open to the top of the processing space 5.

[0132] The exhaust port 29 is positioned higher than the heat plate 3. The exhaust port 29 is positioned above the heat plate 3.

[0133] The exhaust port 29 is positioned higher than the upper surface 11 of the heat plate 3. The exhaust port 29 is positioned above the upper surface 11.

[0134] The exhaust port 29 is positioned higher than the substrate W on the heat plate 3. The exhaust port 29 is positioned above the substrate W on the heat plate 3.

[0135] The exhaust port 29 is positioned higher than the peripheral edge 21b of the top plate 21. The exhaust port 29 is positioned inward from the peripheral edge 21b of the top plate 21.

[0136] The exhaust port 29 is positioned higher than the peripheral wall 22. The exhaust port 29 is positioned inside the peripheral wall 22.

[0137] The exhaust port 29 is positioned higher than the contact member 25. The exhaust port 29 is positioned inside the contact member 25.

[0138] The exhaust port 29 is positioned higher than the gap 7. The exhaust port 29 is positioned inside the gap 7.

[0139] The exhaust port 29 is positioned higher than the inlet 26. The exhaust port 29 is positioned inside the inlet 26.

[0140] The exhaust port 29 is positioned higher than the intake passage 27. The exhaust port 29 is positioned inside the intake passage 27.

[0141] The exhaust port 29 is positioned higher than the air outlet 28. The exhaust port 29 is positioned inside the air outlet 28.

[0142] Refer to Figure 6. In Figure 6, the exhaust port 29 is shown by a dashed line. In a plan view, the exhaust port 29 overlaps with the heat plate 3. In a plan view, the exhaust port 29 overlaps with the top surface 11. In a plan view, the exhaust port 29 overlaps with the substrate mounting surface 11a. In a plan view, the exhaust port 29 does not overlap with the lid mounting surface 11b.

[0143] In a plan view, the exhaust port 29 overlaps with the substrate W on the heat plate 3. In a plan view, the exhaust port 29 overlaps with the central part Wa of the substrate W on the heat plate 3. In a plan view, the exhaust port 29 does not overlap with the peripheral part Wb of the substrate W on the heat plate 3.

[0144] Refer to Figure 3-5. The substrate processing apparatus 1 is equipped with an exhaust pipe 31. The exhaust pipe 31 is connected to the lid 4. The exhaust pipe 31 is connected to the top plate 21. The exhaust pipe 31 is connected to the central part 21a of the top plate 21. The exhaust pipe 31 communicates with the exhaust port 29. The exhaust pipe 31 communicates with the processing space 5. The exhaust pipe 31 discharges gas from the processing space 5.

[0145] The exhaust pipe 31 is installed in the external space 6. The exhaust pipe 31 extends outside the processing space 5. The exhaust pipe 31 is connected to an exhaust treatment facility (not shown). The exhaust treatment facility is equipment for treating exhaust gas. The exhaust treatment facility is, for example, installed outside the substrate processing device 1. The exhaust pipe 31 sends the gas from the processing space 5 to the exhaust treatment facility.

[0146] The substrate processing apparatus 1 is equipped with a valve 32. The valve 32 is located on the exhaust pipe 31. The valve 32 opens and closes the exhaust pipe 31. When the valve 32 opens the exhaust pipe 31, the exhaust pipe 31 discharges gas from the processing space 5. When the valve 32 closes the exhaust pipe 31, the exhaust pipe 31 does not discharge gas from the processing space 5.

[0147] The substrate processing apparatus 1 includes a lid lifting mechanism 33. The lid lifting mechanism 33 moves the lid 4 vertically in the Z direction relative to the heat plate 3. The lid lifting mechanism 33 moves the lid 4 to a first position D1, a second position D2, and a third position D3.

[0148] The lid lifting mechanism 33 comprises an arm 34 and a lid drive unit 35. The arm 34 is connected to the lid 4. The lid drive unit 35 is connected to the arm 34. The lid drive unit 35 moves the arm 34. The lid drive unit 35 raises and lowers the lid 4 via the arm 34. The lid drive unit 35 fine-tunes the position of the lid 4. The lid drive unit 35 fine-tunes the size of the gap 7. The lid drive unit 35 fine-tunes the dimension of the gap 7 in the vertical direction Z. The lid drive unit 35 includes, for example, an electric motor.

[0149] <5. Substrate transport mechanism> Refer to Figure 5. The substrate processing apparatus 1 includes a substrate transport mechanism 36. The substrate transport mechanism 36 transports the substrate W. The substrate transport mechanism 36 transports the substrate W in the processing space 5 and the external space 6.

[0150] The substrate transport mechanism 36 and the substrate lifting mechanism 16 transfer the substrate W to each other. For example, when the lifting pin 17 is in the upper position F2, the substrate transport mechanism 36 places the substrate W on the lifting pin 17. That is, the substrate transport mechanism 36 places the substrate W at the transfer position E2. For example, when the lifting pin 17 is in the upper position F2, the substrate transport mechanism 36 takes the substrate W that is on the lifting pin 17. That is, the substrate transport mechanism 36 takes the substrate W that is located at the transfer position E2.

[0151] The substrate transport mechanism 36 includes a hand 37. The hand 37 supports a single substrate W. The hand 37 supports the substrate W in a horizontal position.

[0152] The substrate transport mechanism 36 includes a hand drive unit (not shown). The hand drive unit is connected to the hand 37. The hand drive unit moves the hand 37. The hand drive unit includes, for example, an electric motor.

[0153] When the substrate transport mechanism 36 transports the substrate W in the processing space 5 and the external space 6, the hand 37 moves between the processing space 5 and the external space 6. When the hand 37 moves between the processing space 5 and the external space 6, the hand 37 passes through the gap 7. Therefore, when the lid 4 is in the first position D1, the lid 4 prevents the substrate transport mechanism 36 from transporting the substrate W in the processing space 5 and the external space 6.

[0154] When the lid 4 is in the third position D3, the lid 4 allows the substrate transport mechanism 36 to transport the substrate W in the processing space 5 and the external space 6. The hand 37 can pass through the second gap 7b. The larger the second gap 7b is, the more the hand 37 can pass through the second gap 7b. In other words, the substrate W can pass through the second gap 7b. The larger the second gap 7b is, the more the substrate W can pass through the second gap 7b.

[0155] When the lid 4 is in the second position D2, the lid 4 prevents the substrate transport mechanism 36 from transporting the substrate W in the processing space 5 and the external space 6. The hand 37 cannot pass through the first gap 7a. The smaller the first gap 7a is, the more the hand 37 cannot pass through the first gap 7a. In other words, the substrate W cannot pass through the first gap 7a. The smaller the first gap 7a is, the more the substrate W cannot pass through the first gap 7a.

[0156] Figure 5 shows the height position H. Height position H is the height position of the hand 37 when it moves between the processing space 5 and the external space 6. Height position H is equal to or higher than height position G0. Height position H is equal to or lower than height position G2. Therefore, the hand 37 can pass through the second gap 7b.

[0157] Height position H is higher than height position G1. Therefore, hand 37 cannot pass through the first gap 7a.

[0158] <6. Control Unit> Figure 7 is a control block diagram of the substrate processing apparatus 1. The substrate processing apparatus 1 includes a control unit 39. The control unit 39 controls the heat plate 3. The control unit 39 controls the temperature control unit 15. The control unit 39 controls the substrate lifting mechanism 16. The control unit 39 controls the lifting pin drive unit 18. The control unit 39 controls the valve 32. The control unit 39 controls the lid lifting mechanism 33. The control unit 39 controls the lid drive unit 35. The control unit 39 controls the substrate transport mechanism 36.

[0159] The control unit 39 is implemented, for example, by a central processing unit (CPU), random access memory (RAM), and a storage medium. The central processing unit performs arithmetic processing. The random access memory functions as a workspace for arithmetic processing. The storage medium is, for example, a hard disk. The control unit 39 has various types of information pre-stored in the storage medium. The information held by the control unit 39 includes, for example, transport information and processing information. The transport information defines the procedure for transporting the substrate W. The processing information defines the procedure for processing the substrate W. The processing information is also called a processing recipe.

[0160] <7. Substrate Processing Method> Figure 8 is a flowchart showing the procedure of the substrate processing method according to the embodiment. The substrate processing apparatus 1 executes the substrate processing method. The substrate processing method is for processing the substrate W. The substrate processing method comprises a loading step, a first heat treatment step, a second heat treatment step, and an unloading step. First, the loading step is performed. After the loading step, the first heat treatment step is performed. After the first heat treatment step, the second heat treatment step is performed. After the second heat treatment step, the unloading step is performed.

[0161] The loading process is an example of the conveying process of the present invention. The unloading process is also an example of the conveying process of the present invention.

[0162] The steps of the substrate processing method will be described below. In the following description, each element of the substrate processing apparatus 1 operates according to the control of the control unit 39.

[0163] Step S1: Loading Process Refer to Figure 5. The lid 4 is located in the third position D3. A second gap 7b is formed. The second gap 7b is formed between the heat plate 3 and the lid 4. The substrate W passes through the second gap 7b. The substrate W is transported from the external space 6 to the processing space 5.

[0164] The lid lifting mechanism 33 positions the lid 4 at the third position D3. The substrate transport mechanism 36 transports the substrate W from the external space 6 to the processing space 5. The substrate lifting mechanism 16 receives the substrate W from the substrate transport mechanism 36.

[0165] Specifically, the lid drive unit 35 positions the lid 4 to the third position. The hand 37 supports the substrate W. The hand drive unit passes the hand 37 and the substrate W on the hand 37 through the second gap 7b. The hand drive unit inserts the hand 37 and the substrate W on the hand 37 from the external space 6 into the processing space 5. The lifting pin drive unit 18 positions the lifting pin 17 to the upper position F2. The hand 37 places the substrate W on the lifting pin 17. The hand 37 moves away from the substrate W. The hand 37 passes through the second gap 7b. The hand 37 exits the processing space 5 into the external space 6.

[0166] The lifting pins 17 support the substrate W at the transfer position E2. The lifting pin drive unit 18 moves the lifting pins 17 from the upper position F2 to the lower position F1. The substrate lifting mechanism 16 moves the substrate W from the transfer position E2 to the processing position E1. The substrate W is placed on the heat plate 3. The lifting pins 17 move away from the substrate W.

[0167] Step S2: First heat treatment process Refer to Figure 3. The lid lifting mechanism 33 moves the lid 4 from the third position D3 to the first position D1. The lid 4 is positioned at the first position D1. The lid 4 is in contact with the heat plate 3. No gap 7 is formed. The substrate W is placed on the heat plate 3. The temperature control unit 15 adjusts the temperature of the substrate W on the heat plate 3. Heat treatment is performed on the substrate W on the heat plate 3. For example, the temperature control unit 15 applies heat to the substrate W on the heat plate 3. The substrate W on the heat plate 3 is heated.

[0168] The gas in the processing space 5 is discharged from the exhaust port 29. Specifically, the valve 32 opens. The exhaust pipe 31 discharges the gas from the processing space 5 through the exhaust port 29.

[0169] The gas from the external space 6 enters the processing space 5 through the inlet 26. The gas then flows from the processing space 5 to the exhaust port 29.

[0170] Figure 3 shows the airflow J1. Airflow J1 is the flow of gas entering the processing space 5 from the external space 6 through the inlet 26.

[0171] The inlet 26 is located at the top of the processing space 5. The outlet 28 is located at the top of the processing space 5. The exhaust port 29 is located at the top of the processing space 5. Therefore, the airflow J1 is formed at the top of the processing space 5.

[0172] The airflow J1 is formed near the lid 4. The airflow J1 runs along the lid 4.

[0173] The airflow J1 is formed near the top plate 21. The airflow J1 follows the top plate 21. The airflow J1 flows from the peripheral part 21b to the central part 21a.

[0174] The inlet 26 is positioned higher than the heat plate 3. The outlet 28 is positioned higher than the heat plate 3. The exhaust port 29 is positioned higher than the heat plate 3. Therefore, the airflow J1 is less likely to form at the bottom of the processing space 5, as it is positioned higher than the bottom of the processing space 5.

[0175] The inlet 26 is positioned higher than the substrate W on the heat plate 3. The outlet 28 is positioned higher than the substrate W on the heat plate 3. The exhaust port 29 is positioned higher than the substrate W on the heat plate 3. Therefore, the airflow J1 is formed higher than the substrate W on the heat plate 3. The airflow J1 is unlikely to form near the substrate W on the heat plate 3. The airflow J1 is formed higher than the coated film B on the substrate W. The airflow J1 is unlikely to form near the coated film B on the substrate W.

[0176] Therefore, the gas does not easily flow near the substrate W on the heat plate 3. The gas does not easily flow along the substrate W on the heat plate 3. The gas accumulates near the substrate W on the heat plate 3. For example, the gas accumulates near the peripheral Wb of the substrate W on the heat plate 3.

[0177] The gas does not flow easily near the coated film B on the substrate W. The gas does not flow easily along the coated film B on the substrate W. The gas accumulates near the coated film B on the substrate W. For example, the gas accumulates near the peripheral Bb of the coated film B on the substrate W.

[0178] Therefore, the heat treatment in the first heat treatment step makes the temperature of the substrate W uniform throughout the entire substrate W. The heat treatment in the first heat treatment step improves the temperature uniformity of the substrate W. For example, the peripheral portion Wb has the same temperature as the central portion Wa.

[0179] The first heat treatment step makes the temperature of the coating film B uniform throughout the entire film. The first heat treatment step improves the temperature uniformity of the coating film B. For example, the peripheral portion Bb has the same temperature as the central portion Ba.

[0180] For example, the heat treatment in the first heat treatment step makes the density of the coating film B uniform throughout the entire coating film B. The heat treatment in the first heat treatment step improves the uniformity of the density of the coating film B. The peripheral portion Bb has the same density as the central portion Ba. After the substrate W is processed by the substrate processing method, the peripheral portion Bb has the same density as the central portion Ba.

[0181] Step S2: Second heat treatment process Refer to Figure 4. The lid lifting mechanism 33 moves the lid 4 from the first position D1 to the second position D2. The lid 4 moves away from the heat plate 3. The lid 4 is positioned at the second position D2. A first gap 7a is formed. The first gap 7a is located between the heat plate 3 and the lid 4. The substrate W is placed on the heat plate 3. The temperature control unit 15 adjusts the temperature of the substrate W on the heat plate 3. Heat treatment is performed on the substrate W on the heat plate 3. The temperature control unit 15 applies heat to the substrate W on the heat plate 3. For example, the substrate W on the heat plate 3 is heated.

[0182] Furthermore, the second heat treatment step is also a step for performing heat treatment on the substrate W. The second heat treatment step is not a step for ventilating the processing space 5.

[0183] The gas in the processing space 5 is discharged from the exhaust port 29. Specifically, the valve 32 opens. The exhaust pipe 31 discharges the gas from the processing space 5 through the exhaust port 29.

[0184] The gas in the external space 6 enters the processing space 5 through the first gap 7a. The gas flows from the first gap 7a to the exhaust port 29.

[0185] Figure 4 shows the airflow J2. Airflow J2 is the flow of gas entering the processing space 5 from the external space 6 through the first gap 7a.

[0186] The first gap 7a is positioned at the same height as the upper surface 11 of the heat plate 3. Therefore, the airflow J2 is formed at the bottom of the processing space 5. The airflow J2 flows at the bottom of the processing space 5.

[0187] The first gap 7a is positioned at the same height as the substrate W on the heat plate 3. Therefore, the airflow J2 is formed at the same height as the substrate W on the heat plate 3. The airflow J2 is formed in the vicinity of the substrate W on the heat plate 3. The airflow J2 runs along the substrate W on the heat plate 3. The gas does not linger in the vicinity of the substrate W on the heat plate 3. For example, the gas does not linger in the vicinity of the peripheral Wb of the substrate W on the heat plate 3.

[0188] The airflow J2 is formed near the coated film B on the substrate W. The airflow J2 follows the coated film B on the substrate W. The gas does not linger near the coated film B on the substrate W. For example, the gas does not linger near the peripheral Bb of the coated film B on the substrate W.

[0189] Subsequently, the airflow J2 rises. The airflow J2 moves towards the exhaust port 29. The airflow J2 enters the exhaust port 29. Therefore, the gas does not accumulate at the bottom of the processing space 5. The gas does not accumulate near the substrate W on the heat plate 3. The gas does not accumulate near the coated film B on the substrate W.

[0190] Refer to Figure 6. The first gap 7a is located outside the substrate W on the heat plate 3. Therefore, the airflow J2 flows from the area outside the substrate W on the heat plate 3 towards the substrate W on the heat plate 3. The airflow J2 flows from the peripheral Wb to the central Wa. The airflow J2 flows from the peripheral Bb to the central Ba.

[0191] In the second heat treatment process, an airflow J1 is also formed in the processing space 5. Specifically, the gas from the external space 6 enters the processing space 5 through the inlet 26.

[0192] As described above, the gas does not accumulate near the coating film B on the substrate W. Therefore, the heat treatment in the second heat treatment step makes the thickness C of the coating film B on the substrate W uniform. The heat treatment in the second heat treatment step improves the uniformity of the thickness C of the coating film B on the substrate W. For example, the thickness Cb of the peripheral portion Bb is the same as the thickness Ca of the central portion Ba.

[0193] As described above, the gas does not linger near the coating film B on the substrate W. Therefore, even if the organic solvent evaporates from the coating film B, the concentration of the organic solvent in the gas near the substrate W is not excessively high. For this reason, the organic solvent evaporates easily from the coating film B. The organic solvent continues to evaporate easily from the coating film B. Even when a large amount of organic solvent evaporates from the coating film B, the organic solvent evaporates smoothly from the coating film B. Therefore, the heat treatment in the second heat treatment step promotes the evaporation of the organic solvent from the coating film B.

[0194] For example, it is easy for organic solvents to volatilize from the central part Ba. Similarly, it is easy for organic solvents to volatilize from the peripheral part Bb. Therefore, it is easy to make the amount of organic solvent volatilizing from the peripheral part Bb equal to the amount of organic solvent volatilizing from the central part Ba. The thickness C of the coating film B depends on the amount of organic solvent contained in the coating film B. For this reason, it is easy to make the thickness Cb of the peripheral part Bb equal to the thickness Ca of the central part Ba. After the substrate W is processed by the substrate processing method, it is easy to make the thickness Cb of the peripheral part Bb equal to the thickness Ca of the central part Ba.

[0195] Step S1: Unloading Process Refer to Figure 5. The lid 4 moves from the second position D2 to the third position D3. The lid 4 is positioned at the third position D3. A second gap 7b is formed. The substrate W passes through the second gap 7b. The substrate W is transported from the processing space 5 to the external space 6.

[0196] The lid lifting mechanism 33 moves the lid 4 from the second position D2 to the third position D3. The substrate lifting mechanism 16 passes the substrate W to the substrate transport mechanism 36. The substrate transport mechanism 36 transports the substrate W from the processing space 5 to the external space 6.

[0197] Specifically, the substrate lifting mechanism 16 moves the substrate W from the processing position E1 to the handover position E2. The substrate lifting mechanism 16 supports the substrate W at the handover position E2. The hand 37 passes through the second gap 7b. The hand 37 enters the processing space 5 from the external space 6. The hand 37 takes the substrate W located at the handover position E2. The hand 37 supports the substrate W. The hand 37 and the substrate W on the hand 37 pass through the second gap 7b. The hand 37 and the substrate W on the hand 37 exit the processing space 5 into the external space 6.

[0198] <8. Effects of the Embodiment> The substrate processing method involves processing the substrate W in a processing space 5. The processing space 5 is defined by a heat plate 3 and a lid 4. The lid 4 is positioned above the heat plate 3.

[0199] The substrate processing method comprises a first heat treatment step. In the first heat treatment step, the lid 4 is positioned at a first position D1. In the first heat treatment step, the lid 4 is in contact with the heat plate 3. In the first heat treatment step, the substrate W is placed on the heat plate 3. In the first heat treatment step, heat treatment is performed on the substrate W placed on the heat plate 3. Therefore, it is easy to retain gas near the substrate W on the heat plate 3 in the first heat treatment step. Thus, it is easy to make the temperature of the substrate W uniform in the first heat treatment step.

[0200] The substrate processing method comprises a second heat treatment step. In the second heat treatment step, the lid 4 is positioned at a second position D2. The second position D2 is higher than the first position D1. In the second heat treatment step, a first gap 7a is formed. The first gap 7a is located between the heat plate 3 and the lid 4. The lid 4 has an exhaust port 29. In the second heat treatment step, the gas in the processing space 5 is discharged from the exhaust port 29. In the second heat treatment step, heat treatment is performed on the substrate W placed on the heat plate 3. Therefore, it is easy to form an airflow J2 near the substrate W in the second heat treatment step. In other words, it is easy for the airflow J2 to flow near the substrate W on the heat plate 3 in the second heat treatment step. Therefore, it is easy to make the thickness C of the coating film B on the substrate W uniform in the second heat treatment step.

[0201] In summary, this substrate processing method includes a first heat treatment step and a second heat treatment step. In the first heat treatment step, it is easy to make the temperature of the substrate W uniform. In the second heat treatment step, it is easy to make the thickness C of the coating film B on the substrate W uniform. Therefore, this substrate processing method allows for proper processing of the substrate W.

[0202] As described above, in the first heat treatment step, the lid 4 is positioned at the first position D1. Therefore, it is easy to retain gas near the coated film B on the substrate W during the first heat treatment step. Thus, it is easy to make the temperature of the coated film B on the substrate W uniform during the first heat treatment step.

[0203] As described above, in the second heat treatment step, the lid 4 is positioned at the second position D2. Therefore, it is easy to form an airflow J2 near the coated film B on the substrate W during the second heat treatment step. In other words, it is easy for the airflow J2 to flow near the coated film B during the second heat treatment step. Thus, it is easy to make the thickness C of the coated film B on the substrate W uniform during the second heat treatment step.

[0204] The second heat treatment process is performed after the first heat treatment process. Therefore, it is easy to perform both the first and second heat treatment processes.

[0205] The purpose of the first heat treatment step is to make the temperature of the substrate W uniform. Therefore, it is easy to make the temperature of the substrate W uniform in the first heat treatment step.

[0206] The heat treatment in the first heat treatment step is intended to equalize the temperature of the coated film B on the substrate W. Therefore, it is easy to equalize the temperature of the coated film B on the substrate W in the first heat treatment step.

[0207] The purpose of the second heat treatment step is to make the thickness C of the coating film B on the substrate W uniform. Therefore, it is easy to make the thickness C of the coating film B on the substrate W uniform in the second heat treatment step.

[0208] In the second heat treatment step, an airflow J2 is formed near the substrate W on the heat plate 3. Therefore, it is easy to make the thickness C of the coating film B on the substrate W uniform in the second heat treatment step.

[0209] In the second heat treatment step, an airflow J2 is formed near the coated film B on the substrate W. Therefore, it is easy to make the thickness C of the coated film B on the substrate W uniform in the second heat treatment step.

[0210] In the second heat treatment step, the first gap 7a is located at the same height as the substrate W on the heat plate 3. Therefore, it is easy to form an airflow J2 near the substrate W on the heat plate 3. It is easy for the airflow J2 to flow near the substrate W on the heat plate 3.

[0211] As described above, in the second heat treatment step, the first gap 7a is located at the same height as the substrate W on the heat plate 3. Therefore, it is easy to form an airflow J2 near the coated film B on the substrate W.

[0212] In the second heat treatment step, the first gap 7a is small enough that the substrate W cannot pass through it. Therefore, it is easy to form an airflow J2 near the substrate W on the heat plate 3.

[0213] As described above, in the second heat treatment step, the first gap 7a is small enough that the substrate W cannot pass through it. Therefore, it is easy to form an airflow J2 near the coated film B on the substrate W.

[0214] The exhaust port 29 is located higher than the substrate W on the heat plate 3. Therefore, it is easy to form an airflow J2 near the substrate W on the heat plate 3 during the second heat treatment process.

[0215] As described above, the exhaust port 29 is located higher than the substrate W on the heat plate 3. Therefore, in the second heat treatment process, gas is less likely to accumulate near the substrate W on the heat plate 3.

[0216] As described above, the exhaust port 29 is located higher than the substrate W on the heat plate 3. Therefore, it is easy to form an airflow J2 near the coated film B on the substrate W during the second heat treatment process.

[0217] As described above, the exhaust port 29 is located higher than the substrate W on the heat plate 3. Therefore, in the second heat treatment process, gas is less likely to accumulate near the coated film B on the substrate W.

[0218] In the first heat treatment process, the gas in the processing space 5 is discharged from the exhaust port 29. Therefore, in the first heat treatment process, the substrate W is processed more effectively.

[0219] The lid 4 has an inlet 26. Therefore, in the first heat treatment step, it is easy to discharge the gas from the treatment space 5 through the exhaust port 29.

[0220] In the first heat treatment step, the inlet 26 is positioned higher than the substrate W on the heat plate 3. Therefore, in the first heat treatment step, the gas does not easily flow near the substrate W on the heat plate 3. In the first heat treatment step, the airflow J1 does not easily flow near the substrate W on the heat plate 3. In other words, in the first heat treatment step, it is easy to cause the gas to accumulate near the substrate W on the heat plate 3. Therefore, it is easy to make the temperature of the substrate W uniform in the first heat treatment step.

[0221] As described above, in the first heat treatment step, the inlet 26 is positioned higher than the substrate W on the heat plate 3. Therefore, in the first heat treatment step, the gas does not easily flow near the coated film B on the substrate W. In the first heat treatment step, the airflow J1 does not easily flow near the coated film B on the substrate W. In other words, in the first heat treatment step, it is easy to cause the gas to accumulate near the coated film B on the substrate W. Therefore, it is easy to make the temperature of the coated film B on the substrate W uniform in the first heat treatment step.

[0222] In the first heat treatment step, the outlet 28 is positioned higher than the substrate W on the heat plate 3. Therefore, in the first heat treatment step, the gas does not easily flow near the substrate W on the heat plate 3. In the first heat treatment step, the airflow J1 does not easily flow near the substrate W on the heat plate 3. In other words, in the first heat treatment step, it is easy to cause the gas to accumulate near the substrate W on the heat plate 3. Therefore, it is easy to make the temperature of the substrate W uniform in the first heat treatment step.

[0223] As described above, in the first heat treatment step, the outlet 28 is positioned higher than the substrate W on the heat plate 3. Therefore, in the first heat treatment step, the gas does not easily flow near the coated film B on the substrate W. In the first heat treatment step, the airflow J1 does not easily flow near the coated film B on the substrate W. In other words, in the first heat treatment step, it is easy to cause the gas to accumulate near the coated film B on the substrate W. Therefore, it is easy to make the temperature of the coated film B on the substrate W uniform in the first heat treatment step.

[0224] When the loading and unloading processes are not distinguished, they are simply called the "transport process." In the transport process, the lid 43 is positioned at the third position D3. The third position D3 is higher than the second position D2. In the transport process, a second gap 7b is formed. The second gap 7b is located between the heat plate 3 and the lid 4. In the transport process, the substrate W is transported between the processing space 5 and the external space 6. In the transport process, the substrate W passes through the second gap 7b. Therefore, transporting the substrate W between the processing space 5 and the external space 6 is easy.

[0225] In the transport process, the second gap 7b is large enough for the substrate W to pass through. Therefore, it is easy for the substrate W to pass through the second gap 7b.

[0226] <9. Modified Embodiments> This invention is not limited to the embodiments described below and can be modified and implemented as follows.

[0227] (1) The first heat treatment step may be performed after the second heat treatment step.

[0228] Figure 9 is a flowchart showing the procedure for the substrate processing method of a modified embodiment. Note that components identical to those in the embodiment are denoted by the same reference numerals, and detailed explanations are omitted.

[0229] The substrate processing method according to the modified embodiment comprises a first heat treatment step and a second heat treatment step. The first heat treatment step is performed after the second heat treatment step.

[0230] Even with the modified embodiment described in (1) above, it is easy to perform both the first heat treatment step and the second heat treatment step.

[0231] (2) When the lid 4 is in the first position D1, the lid 4 may be close to the heat plate 3. When the lid 4 is in the first position D1, the lid 4 may be positioned close to the heat plate 3. When the lid 4 is in the first position D1, the lid 4 does not have to be in contact with the heat plate 3. When the lid 4 is in the first position D1, a gap 7 may be created between the lid 4 and the heat plate 3.

[0232] For example, when the lid 4 is in the first position D1, the contact member 25 may be close to the heat plate 3. For example, when the lid 4 is in the first position D1, the contact member 25 may be positioned close to the heat plate 3. For example, when the lid 4 is in the first position D1, the contact member 25 does not have to be in contact with the heat plate 3. For example, when the lid 4 is in the first position D1, a gap 7 may occur between the contact member 25 and the heat plate 3.

[0233] As described above, the first position D1 is lower than the second position D2. Therefore, even if a gap 7 is created when the lid 4 is in the first position D1, the gap 7 when the lid 4 is in the first position D1 is smaller than the first gap 7a. For example, the gap 7 when the lid 4 is in the first position D1 is located lower than the substrate W on the heat plate 3. For example, at least a portion of the substrate W on the heat plate 3 is located higher than the gap 7 when the lid 4 is in the first position D1. For example, at least a portion of the substrate W on the heat plate 3 is located higher than the entirety of the gap 7 when the lid 4 is in the first position D1.

[0234] As described above, the gap 7 when the lid 4 is in the first position D1 is, for example, sufficiently small. Therefore, even in the modified embodiment of (2) above, it is easy to retain gas near the substrate W in the first heat treatment step. Therefore, even in the modified embodiment of (2) above, it is easy to make the temperature of the substrate W uniform in the first heat treatment step.

[0235] (3) The lid 4 may be moved to a position other than the first position D1, the second position D2, and the third position D3.

[0236] Although not shown in the diagram, for example, the substrate processing method includes a third heat treatment step. In the third heat treatment step, the lid 4 is positioned at a fourth position. The fourth position is higher than the first position D1. The fourth position is different from the second position D2. In the third heat treatment step, a third gap is formed. The third gap is located between the heat plate 3 and the lid 4. In the third heat treatment step, the gas in the processing space 5 is discharged from the exhaust port 29. In the third heat treatment step, heat treatment is performed on the substrate W placed on the heat plate 3.

[0237] (4) In the first heat treatment step, the gas in the processing space 5 does not need to be discharged. In the first heat treatment step, the gas in the processing space 5 does not need to be discharged from the exhaust port 29. In the first heat treatment step, the valve 32 may close the exhaust pipe 31.

[0238] According to the modified embodiment of (4) above, it is even easier to retain gas near the substrate W in the first heat treatment step. Therefore, it is even easier to make the temperature of the substrate W uniform in the first heat treatment step.

[0239] (5) The lid mounting surface 11b does not have to be integral with the substrate mounting surface 11a. The lid mounting surface 11b may be separable from the substrate mounting surface 11a.

[0240] (6) The guide member 14 may be omitted.

[0241] (7) The outlet 28 may be in the same position as the inlet 26. In other words, the inlet 26 may be open to the processing space 5. The outlet 28 may be omitted. The inlet flow path 27 may be omitted.

[0242] (8) The inlet 26 may be omitted. The inlet 26, the inlet flow path 27, and the outlet 28 may all be omitted.

[0243] (9) When the lid 4 is in the first position D1, the processing space 5 may communicate with the external space 6 via the inlet 26. Alternatively, when the lid 4 is in the first position D1, the processing space 5 does not need to communicate with the external space 6. When the lid 4 is in the first position D1, the processing space 5 may be sealed.

[0244] (10) The embodiments and each modified embodiment described in (1) to (9) above may be further modified as appropriate by substituting or combining each component with the components of other modified embodiments. [Explanation of Symbols]

[0245] 1 ... Substrate processing equipment 3… Heat plate 4 … Lid 5 ... Processing space 6. The space outside the processing space (external space) 7… Gap 7a ... First gap 7b ... Second gap 11… Top surface of the heat plate 15 … Temperature control section 16 ... Circuit board lifting mechanism 21… Tabletop 22 … Peripheral wall 25 ... Contact member 26 ... Inlet 28 … Air outlet 29… Exhaust vent 31… Exhaust pipe 32… valve 33... Lid lifting mechanism 36… Substrate transport mechanism 37… Hand 39 ... Control Unit B... Coating film Ba... Central part of the coated film Ba... Peripheral edge of the coated film C... Thickness of the coating film Ca… Thickness of the central part of the coated film Cb… Thickness of the peripheral edge of the coated film D1 … 1st position D2 … 2nd position D3… 3rd position E1 ... Processing position E2 ... Delivery location G0 ... Height position of the lower end of the first gap, height position of the lower end of the second gap G1... Height position of the upper end of the first gap G2... Height position of the upper end of the second gap H... The height position of the hand as it moves between the processing space and the external space. J1… Airflow (the flow of gas entering the processing space from the external space through the inlet) J2… Airflow (the flow of gas entering the processing space from the external space through the first gap) W… Circuit board Wa... Center of the circuit board Wb ... Peripheral edge of the substrate X…Horizontal direction Z ... Vertical direction

Claims

1. A substrate processing method in which a substrate is processed in a processing space defined by a heat plate and a lid above the heat plate, A first heat treatment step involves positioning the lid in a first position, bringing the lid into contact with or close to the heat plate, and performing heat treatment on the substrate placed on the heat plate. A second heat treatment step involves positioning the lid at a second position higher than the first position to form a first gap between the heat plate and the lid, discharging the gas from the processing space through the exhaust port of the lid, and performing heat treatment on the substrate placed on the heat plate. Equipped with Substrate processing method.

2. In the substrate processing method described in claim 1, The second heat treatment step is performed after the first heat treatment step. Substrate processing method.

3. In the substrate processing method described in claim 1, The first heat treatment step is performed after the second heat treatment step. Substrate processing method.

4. In the substrate processing method described in claim 1, The heat treatment in the first heat treatment step is for the purpose of making the temperature of the substrate uniform. Substrate processing method.

5. In the substrate processing method described in claim 1, The heat treatment in the second heat treatment step is for the purpose of making the thickness of the coating film on the substrate uniform. Substrate processing method.

6. In the substrate processing method described in claim 1, In the second heat treatment step, an airflow is formed near the substrate on the heat plate. Substrate processing method.

7. In the substrate processing method described in claim 1, In the second heat treatment step, the first gap is located at the same height as the substrate on the heat plate. Substrate processing method.

8. In the substrate processing method described in claim 1, In the second heat treatment step, the first gap is small enough that the substrate cannot pass through it. Substrate processing method.

9. In the substrate processing method described in claim 1, The exhaust port is located at a higher position than the substrate on the heat plate. Substrate processing method.

10. In the substrate processing method described in claim 1, In the first heat treatment step, the gas in the treatment space is discharged from the exhaust port. Substrate processing method.

11. In the substrate processing method described in claim 1, The lid has an inlet Substrate processing method.

12. In the substrate processing method according to claim 11, In the first heat treatment step, the inlet is positioned higher than the substrate on the heat plate. Substrate processing method.

13. In the substrate processing method described in claim 1, The process includes a transport step in which the lid is positioned at a third position higher than the second position to form a second gap between the heat plate and the lid, and the substrate is transported between the processing space and the space outside the processing space by passing the substrate through the second gap. Substrate processing method.

14. In the substrate processing method described in claim 13, In the transport process, the second gap is large enough for the substrate to pass through. Substrate processing method.

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