Solid-state imaging device

Abstract

To improve the characteristics of solid-state imaging devices. [Solution] The solid-state imaging device of the embodiment comprises a plurality of pixels provided on a substrate and arranged in a first direction and a second direction parallel to and intersecting with respect to the surface of the substrate, and a plurality of microlenses provided above the plurality of pixels, each of the plurality of microlenses having a semi-cylindrical or semi-elliptical columnar structure extending in the first direction.

Description

Technical Field

[0001] Embodiments of the present invention relate to a solid-state imaging device.

Background Art

[0002] In a solid-state imaging device, a microlens may be used to prevent a decrease in the sensitivity of pixels.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Summary of the Invention

Problems to be Solved by the Invention

[0004] Improve the characteristics of the solid-state imaging device.

Means for Solving the Problems

[0005] The solid-state imaging device according to the embodiment is provided on a substrate, and includes a plurality of pixels arranged in a first direction and a second direction that are parallel to the surface of the substrate and intersect each other, and a plurality of microlenses provided above the substrate. Each of the plurality of microlenses has a semi-cylindrical or semi-elliptical columnar structure extending in the first direction.

Brief Description of the Drawings

[0006] [Figure 1] A block diagram showing a configuration example of the solid-state imaging device according to the first embodiment. [Figure 2]A bird's-eye view showing an example of the structure of a solid-state imaging device according to the first embodiment. [Figure 3] A plan view showing an example of the structure of a solid-state imaging device according to the first embodiment. [Figure 4] A cross-sectional view showing an example of the structure of a solid-state imaging device according to the first embodiment. [Figure 5] A cross-sectional view showing an example of the structure of a solid-state imaging device according to the first embodiment. [Figure 6] A plan view showing an example of the structure of a solid-state imaging device according to the second embodiment. [Figure 7] A cross-sectional view showing an example of the structure of a solid-state imaging device according to the second embodiment. [Figure 8] A plan view showing an example of the structure of a solid-state imaging device according to the third embodiment. [Figure 9] A cross-sectional view showing an example of the structure of a solid-state imaging device according to the third embodiment. [Figure 10] A cross-sectional view showing an example of the structure of a solid-state imaging device according to the third embodiment. [Modes for carrying out the invention]

[0007] (Embodiment) An embodiment of the solid-state imaging apparatus will be described with reference to Figures 1 to 10. In the following description, elements having the same function and configuration will be denoted by the same reference numeral. In addition, in each of the following embodiments, if components that are denoted by reference numerals with distinguishing numbers / letters at the end (e.g., circuits, wiring, various voltages and signals, etc.) do not need to be distinguished from one another, the numbers / letters at the end will be omitted (reference numeral).

[0008] (1) First Embodiment The first embodiment of the solid-state imaging apparatus will be described with reference to Figures 1 to 5.

[0009] <Example Configuration> Figure 1 is a block diagram illustrating an example of the configuration of the solid-state imaging device according to this embodiment.

[0010] The solid-state imaging device 1 of this embodiment includes a pixel array 10 and a control circuit 20.

[0011] The pixel array 10 receives light from a subject. The pixel array 10 converts the received light into an electrical signal.

[0012] The control circuit 20 controls the operation of the pixel array 10. The control circuit 20 controls the sampling timing of light in the pixel array 10. The control circuit 20 performs various signal processes on the electrical signal acquired by the pixel array 10.

[0013] The solid-state imaging device 1 of this embodiment shown in FIG. 1 is, for example, a linear image sensor. The linear image sensor is composed of, for example, a surface-illuminated CMOS image sensor or a surface-illuminated CCD image sensor.

[0014] FIG. 2 is a bird's-eye view showing a structural example of the pixel array 10 in the solid-state imaging device 1 of this embodiment.

[0015] As shown in FIG. 2, the pixel array 10 includes a semiconductor substrate 90, an insulating layer 91, a plurality of pixels 100, wirings 50, a color filter 120, and a microlens array 150.

[0016] The plurality of pixels 100 are provided in the semiconductor substrate 90. The plurality of pixels 100 are arranged in an array in a plane parallel to the surface of the semiconductor substrate 90.

[0017] The insulating layer 91 is provided on the semiconductor substrate 90. The insulating layer 91 covers the surface of the semiconductor substrate 90.

[0018] The wirings 50 are provided in the insulating layer 91. The wirings 50 have a plurality of openings OP. The openings OP overlap the pixels 100 in a direction perpendicular to the surface of the semiconductor substrate 90.

[0019] The color filter 120 is provided above the semiconductor substrate 90 via the insulating layer 91.

[0020] The microlens array 150 is positioned above the multiple pixels 100 via an insulating layer 91 and a color filter 120. The microlens array 150 includes multiple microlenses ML.

[0021] In this embodiment, the microlens ML has a semi-cylindrical or semi-elliptical structure. The microlens ML extends along the arrangement direction of the multiple pixels 100. The longitudinal direction of the microlens ML (the axial direction of the semicylinder) is along the arrangement direction of the pixels 100. In the direction of adjacent multiple microlenses ML, the microlens ML has a curved surface (a surface with curvature). In the direction of adjacent microlenses ML, the curved surfaces of adjacent microlenses ML face each other. The microlens ML covers the X-direction edge (outer edge) and the Y-direction edge (outer edge) of the pixel 100.

[0022] The structure of the solid-state imaging device 1 of this embodiment will be described in more detail with reference to Figures 3, 4, and 5.

[0023] Figure 3 is a plan view showing a more specific structural example of the pixel array 10 in the solid-state imaging device 1 of this embodiment. Figures 4 and 5 are cross-sectional views showing a more specific structural example of the pixel array 10 in the solid-state imaging device 1 of this embodiment. Figure 4 shows the cross-sectional structure of the pixel array 10 along line AA in Figure 3. Figure 5 shows the cross-sectional structure of the pixel array 10 along line BB in Figure 3.

[0024] As shown in Figures 3 to 5, the multiple pixels 100 are arranged in the X direction (column direction of the pixel array 10) and the Y direction (row direction of the pixel array 10) parallel to the surface of the semiconductor substrate 90. A group PG of multiple pixels 100 arranged in the X direction forms a pixel array PG. The pixels 100 are formed from one or more semiconductor layers (diffusion layers) provided in the semiconductor substrate 90. The pixels 100 include, for example, one or more n-type semiconductor layers and / or one or more p-type semiconductor layers. The pixels 100 include, for example, a photodiode 100.

[0025] The dimension of pixel (photodiode) 100 in the X direction is set to "Px". The dimension of pixel (photodiode) 100 in the Y direction is set to "Py". For example, dimension Px is equal to dimension Py. However, depending on the specifications or design of the linear image sensor, dimension Px may differ from dimension Py.

[0026] The insulating layer 91 is provided on the surface of the semiconductor substrate 90.

[0027] The color filter 120 is provided on the insulating layer 91 in the Z direction perpendicular to the surface of the semiconductor substrate 90. The color filter 120 includes a plurality of filter layers 121, 122, and 123. Each of the filter layers 121, 122, and 123 transmits light of a different wavelength band. The color filter 120 includes a red filter layer 121, a green filter layer 122, and a blue filter layer 123. Each of the filter layers 121, 122, and 123 extends in the X direction. The red filter layer 121 is provided above a plurality of pixels 100 that form a pixel row PG, so as to span a plurality of pixels 100 aligned in the X direction. The plurality of green filter layers 122 are provided above a plurality of pixels 100 that form a pixel row PG, so as to span a plurality of pixels 100 aligned in the X direction. The plurality of blue filter layers 123 are provided above a plurality of pixels 100 that form a pixel row PG, so as to span a plurality of pixels 100 aligned in the X direction. For example, in the Y direction, the green filter layer 122 is located between the red filter layer 121 and the blue filter layer 123.

[0028] The wiring 50 is provided within the insulating layer 91. The wiring 50 is provided in the layer between the surface of the color filter 120 and the semiconductor substrate 90. The wiring 50 is used, for example, as a signal line for the pixel array 10 or as a power line for the pixel array 10. The wiring 50 functions as a light-shielding film to prevent light crosstalk between adjacent pixels 100. The wiring 50 is a metal layer containing copper (Cu) or aluminum (Al). The wiring 50 may also be a conductive layer in an electrically floating state.

[0029] The wiring 50 includes multiple apertures OP. The apertures OP have a rectangular shape when viewed from the Z direction. The apertures OP overlap with pixels 100 in the Z direction.

[0030] The wiring 50 includes a wiring section 501 extending in the X direction and a wiring section 502 extending in the Y direction. The wiring section 501 is continuous with the wiring section 502. Multiple wiring sections 501 are aligned in the Y direction. Multiple wiring sections 502 are aligned in the X direction. The wiring section 501 is located in the region between two openings OP aligned in the Y direction when viewed from the Z direction. The wiring section 502 is located in the region between two openings OP aligned in the X direction when viewed from the Z direction. In the Z direction, the wiring section 502 covers the X-direction end of the pixel 100. The wiring sections 501 and 502 surround the openings OP. In some cases, the wiring section 501 may also cover the Y-direction end of the pixel 100 when viewed from the Z direction.

[0031] The dimension Dy of the aperture OP along the Y direction (the spacing between the wiring sections 501 aligned in the Y direction) is less than or equal to the dimension Py of the pixel 100 along the Y direction. However, depending on the specifications or design of the linear image sensor, dimension Dy may be greater than dimension Py. The dimension Dx of the aperture OP along the X direction (the spacing between the wiring sections 502 aligned in the X direction) is smaller than the dimension Px of the pixel 100 along the X direction. Also, dimension Dx is smaller than the dimension Dy of the pixel 100 along the Y direction.

[0032] Light focusing in the Y direction of pixel 100 is ensured according to the dimension Dy of the aperture OP. Light focusing in the X direction of pixel 100 is ensured according to the size of the area focused by the microlens ML (e.g., the lens width of the microlens ML).

[0033] The area that pixel 100 can receive light from depends on the dimensions of the aperture OP. For example, if dimension Dy is less than or equal to dimension Py, the area that pixel 100 can receive light from will be set to approximately "Dy × Dx".

[0034] The microlens array 150 is provided on the color filter 120 in the Z direction. The microlens array 150 includes a plurality of microlenses ML. The microlenses ML have a semi-cylindrical (or semi-elliptical) structure.

[0035] Each microlens ML is located on a corresponding filter layer among multiple filter layers 121, 122, and 123. One microlens ML overlaps with one pixel 100 in the Z direction.

[0036] Generally, as the length or width of a microlens increases relative to its height, the edges of the microlens become spherical, depending on the material or processing conditions. However, the surface of the microlens becomes flatter as you move away from the edges towards the center.

[0037] The microlens ML has a semicircular or semi-elliptical cross-sectional shape (dome-shaped cross-section) when viewed from the Y direction. The microlens ML has curvature in its cross-sectional shape when viewed from the Y direction, from the top end toward the X end (side).

[0038] Furthermore, if the cross-sectional shape of the microlens ML as viewed from the Y direction has a predetermined curvature around its axis (a dome-shaped shape), the cross-sectional shape of the microlens ML as viewed from the Y direction is not limited to a semicircle or a semiellipse.

[0039] The X-direction end of the microlens ML has a curved (spherical) structure. The curved shape of the X-direction end of the microlens ML is designed so that light is refracted toward the aperture OP. As a result, light from the X direction is incident on pixel 100 due to the lens effect of the microlens ML. Therefore, the curved shape of the X-direction end of the microlens ML contributes to the focusing of light from the X direction due to the lens effect.

[0040] The boundaries between adjacent microlenses ML in the X direction are characterized by adjacent curved surfaces that contribute to light focusing, resulting in a continuous surface arrangement.

[0041] The microlens ML has a rectangular cross-sectional shape when viewed from the X direction. The microlens ML has a flat upper end (top surface) in its cross-sectional shape when viewed from the Y direction.

[0042] The Y-direction end (hereinafter also referred to as the curved surface) 111 of the microlens ML has, for example, a curved structure. The curved surface 111 is located away from the aperture OP. The curved surface 111 is spaced away from the edge of the pixel 100 by a distance that does not contribute to the focusing of light. Wiring 50 is interposed on a straight line connecting the curved surface 111 and the pixel 100. Even if light is refracted by the curved shape of the Y-direction end 111 of the microlens ML, the incidence of light on the pixel 100 is blocked by the wiring 501. Therefore, the curved shape of the Y-direction end 111 of the microlens ML does not contribute to the focusing of light from the Y direction. As a result, light from the Y direction is incident on the pixel 100 without the influence of the lens effect.

[0043] Since the semi-cylindrical microlenses ML do not contribute to the focusing of light from the Y direction due to the lens effect, adjacent microlenses ML in the Y direction do not need to have adjacent curved surfaces.

[0044] For example, a region 99 not covered by the microlenses ML (hereinafter referred to as the non-focusing region) is created in the area between diagonally adjacent microlenses ML. The non-focusing region 99 is located above the part of the pixel 100 that does not contribute to light detection.

[0045] As described above, in the state without the light-gathering effect of the microlens ML, the dimension along the Y direction of the region through which light passes from the microlens ML toward the pixel 100 (the dimension that affects light detection) is determined based on the dimension Dy between the wiring sections 501 (the dimension Py along the Y direction of the pixel 100), and the dimension along the X direction of the region through which light passes from the microlens ML toward the pixel 100 is determined based on the spacing Dx between the wiring sections 502.

[0046] Therefore, the light from the X direction is focused by the spherical side of the semi-cylindrical microlens ML in the X direction. This ensures a sufficient amount of light from the X direction.

[0047] The solid-state imaging device 1 of this embodiment includes a semi-cylindrical (or semi-elliptical) microlens ML. This allows the solid-state imaging device 1 of this embodiment to suppress a decrease in pixel sensitivity within the pixel array 10.

[0048] <Summary> Image reading devices such as photocopiers or scanners include solid-state imaging devices for reading data such as images. While image reading devices are becoming faster year by year, this increased speed tends to reduce the accumulation time of incident light. From the perspective of cost and development efficiency, if the same light source as existing devices is used, the reduced accumulation time of incident light will decrease the output level of light incident on the pixels. This may result in a deterioration of the image quality of the acquired images.

[0049] Therefore, solid-state imaging devices are required to be both high-speed and highly sensitive.

[0050] In typical solid-state imaging devices, when island-type microlenses are used in a microlens array, non-focusing regions occur at the boundaries between microlenses that cannot be covered by the microlenses. As a result, in typical solid-state imaging devices, the light-gathering efficiency of the incident light decreases, leading to a decrease in pixel sensitivity.

[0051] The solid-state imaging device 1 of this embodiment includes a microlens ML having a semi-cylindrical (or semi-elliptical) structure. The semi-cylindrical microlens ML has a curved surface (lens-shaped curved surface) that has a lens effect at its end in the X direction.

[0052] In this embodiment, the dimension along the Y direction of the region through which light passes to the pixel 100 corresponds to the dimension Dy between the wiring sections 501 (or the dimension Py along the Y direction of the pixel 100), and the dimension along the X direction of the region through which light passes to the pixel 100 corresponds to the dimension Dx between the wiring sections 502 aligned in the X direction. Dimension Dx is smaller than dimension Px.

[0053] Therefore, in this embodiment, the microlens ML can improve the collection of light from the X direction, where the effective area size of the pixel 100 is small.

[0054] Furthermore, as in this embodiment, when multiple semi-cylindrical microlenses ML are arranged in an array within the pixel array 10, the non-light-collecting region 99 that affects the sensitivity of the pixels can be reduced.

[0055] For example, the solid-state imaging device 1 of this embodiment can improve the sensitivity of pixels 100 by about 5% compared to a general solid-state imaging device. The effect of the solid-state imaging device 1 of this embodiment increases as the pixel size decreases.

[0056] In this embodiment, the microlens ML has a semi-cylindrical structure extending in the Y direction, which reduces the effect of misalignment between the microlens ML and the aperture OP in the Y direction. Therefore, the solid-state imaging device 1 of this embodiment can improve manufacturing yield and throughput.

[0057] As described above, the solid-state imaging device 1 of this embodiment can receive light from the Y direction (row direction of the pixel array 10) in a region corresponding to the pixel 100 via the aperture OP, and can collect light from the X direction (column direction of the pixel array 10), whose size is limited by the wiring 50, by utilizing the lens effect of the microlens ML.

[0058] As a result, the solid-state imaging device 1 of this embodiment can improve the sensitivity of pixels without degrading the resolution in the column direction.

[0059] Therefore, the solid-state imaging device 1 of this embodiment can improve the characteristics of the solid-state imaging device.

[0060] (2) Second embodiment The solid-state imaging device of the second embodiment will be described with reference to Figures 6 and 7.

[0061] Figure 6 is a plan view showing an example of the structure of the pixel array 10 in the solid-state imaging device 1 of this embodiment. Figure 7 is a cross-sectional view showing an example of the structure of the pixel array 10 in the solid-state imaging device 1 of this embodiment. Figure 7 shows the cross-sectional structure of the pixel array 10 along line AA in Figure 6. Note that the cross-sectional structure of the pixel array 10 along line BB in Figure 6 is substantially the same as the structure shown in Figure 5.

[0062] As shown in Figures 6 and 7, a single semi-cylindrical (semi-elliptical) microlens ML may be provided above a plurality of pixels 100 aligned in the Y direction. The microlens ML extends in the Y direction from one end of the pixel array 10 to the other. A single microlens ML spans a plurality of pixel rows PG aligned in the Y direction.

[0063] A single microlens ML is positioned on the color filter 120 so as to span the red filter layer 121, the green filter layer 122, and the blue filter layer 123. Therefore, the microlens ML overlaps with multiple pixels 100 corresponding to different wavelength bands in the Z direction.

[0064] At the boundary between 100 pixels aligned in the Y direction, one microlens ML extends in the Y direction. The Y-direction end of the lens shape of the microlens ML is not located within the region between the 100 pixels aligned in the Y direction.

[0065] As a result, no non-light-collecting region 99 occurs in the area above the array-like arrangement of pixels 100.

[0066] Therefore, in this embodiment, adverse effects caused by the focusing of light from the microlens ML in the Y direction on each pixel 100 can be suppressed.

[0067] As described above, the solid-state imaging device 1 of this embodiment can improve the characteristics of the solid-state imaging device.

[0068] (3) Third Embodiment A third embodiment of the solid-state imaging apparatus will be described with reference to Figures 8 to 10.

[0069] Figure 8 is a plan view showing an example of the structure of the pixel array 10 in the solid-state imaging device 1 of this embodiment. Figures 9 and 10 are cross-sectional views showing an example of the structure of the pixel array 10 in the solid-state imaging device 1 of this embodiment. Figure 9 shows the cross-sectional structure of the pixel array 10 along line AA in Figure 8. Figure 10 shows the cross-sectional structure of the pixel array 10 along line BB in Figure 8.

[0070] As shown in Figures 8 to 10, in the microlens array 150, each microlens ML may have a semi-cylindrical or semi-elliptical columnar structure extending in the X direction.

[0071] Each microlens ML extends in the X direction. Each microlens ML spans multiple pixels 100 aligned in the X direction. Each microlens ML is located on a filter layer 121, 122, or 123 corresponding to a single wavelength band (color). Therefore, each microlens ML overlaps in the Z direction with a pixel row PG containing multiple pixels 100 corresponding to a single wavelength band. For example, one microlens ML overlaps in the Z direction with a pixel row PG below the red filter layer 121. Another microlens ML overlaps in the Z direction with a pixel row PG below the green filter layer 122. Yet another microlens ML overlaps in the Z direction with a pixel row PG below the blue filter layer 123.

[0072] Multiple microlenses (ML) are adjacent to each other in the Y direction.

[0073] When the microlens ML extends in the X direction, the aperture OPx is provided within the wiring 50 so as to span multiple pixels 100 aligned in the X direction. The aperture OPx extends in the X direction. No wiring 502 is provided in the region between the multiple pixels 100 aligned in the X direction. The multiple pixels 100 aligned in the X direction are not optically separated. In the X direction, the aperture OPx has a dimension Db. The dimension Db is greater than or equal to the sum of the dimensions Px of the multiple pixels aligned in the X direction in the X direction (here, 4 × Px).

[0074] In the Y direction, the aperture OPx has dimension Da. Dimension Da is smaller than the dimension Py of pixel 100.

[0075] A microlens ML has a semicircular or semi-elliptical cross-sectional shape (dome-shaped) when viewed from the X direction. The curved surface that provides the lens effect of the microlens ML is provided at the Y-direction end of the microlens ML. The curved surfaces face each other between adjacent microlenses ML in the Y direction.

[0076] The microlens ML has a rectangular cross-sectional shape when viewed from the Y direction. The microlens ML has a flat top surface when viewed from the Y direction. When the microlens ML extends in the X direction, a curved portion 111 is provided at the X-direction end of the microlens ML. The curved portion 111 is positioned so as not to contribute to light focusing, overlapping with the wiring portion 501 in the Z direction.

[0077] Thus, in the solid-state imaging device 1 of this embodiment, a semi-cylindrical (or semi-elliptical) microlens ML is provided so as to span multiple pixels 100 (pixel array PG) that detect light in the same wavelength band.

[0078] In this case as well, the solid-state imaging device 1 of this embodiment can obtain substantially the same effects as the solid-state imaging device of the other embodiments described above.

[0079] Therefore, the solid-state imaging device 1 of this embodiment can improve the characteristics of the solid-state imaging device.

[0080] (4) Others While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of symbols]

[0081] 1: Solid-state imaging device, 10: Pixel array, 100: Pixel, 50: Wiring, OP: Aperture, 120: Color filter, 150: Microlens array, ML: Microlens.

Claims

1. A plurality of pixels are provided on a substrate and are arranged in a first direction and a second direction that are parallel to the surface of the substrate and intersect each other, A plurality of microlenses provided above the substrate, It is equipped with, Each of the plurality of microlenses has a semi-cylindrical or semi-elliptical structure extending in the first direction. Solid-state imaging device.

2. Each of the plurality of microlenses has a curved surface in the second direction. The solid-state imaging apparatus according to claim 1.

3. A wiring having multiple openings is provided between the plurality of pixels and the plurality of microlenses in a third direction perpendicular to the surface of the substrate, Furthermore, it is equipped with, The first of the plurality of openings overlaps with the first of the plurality of pixels in the third direction. The dimension of the first opening along the first direction is less than or equal to the dimension of the pixel along the first direction. The dimension of the first aperture along the second direction is smaller than the dimension of the pixel along the second direction. The solid-state imaging apparatus according to claim 1.

4. Each of the plurality of microlenses has a first end having a curved surface in the first direction, The first end overlaps with the wiring in the third direction and is spaced apart from the ends of the plurality of pixels. The solid-state imaging apparatus according to claim 3.

5. Each of the plurality of microlenses is arranged in the second direction, The plurality of microlenses include a first microlens and a second microlens that are adjacent in the second direction, The curved surface of the first microlens faces the curved surface of the second microlens in the second direction. The solid-state imaging apparatus according to claim 1.

6. Each of the plurality of microlenses overlaps with a plurality of first pixels arranged in the first direction among the plurality of pixels in a third direction perpendicular to the surface of the substrate. The solid-state imaging apparatus according to claim 1.

7. A color filter is provided between the plurality of microlenses and the plurality of pixels in a third direction perpendicular to the surface of the substrate, and includes a first filter corresponding to a first wavelength band, a second filter corresponding to a second wavelength band, and a third filter corresponding to a third wavelength band. Furthermore, it is equipped with, The first filter, the second filter, and the third filter extend in the second direction, The first filter, the second filter, and the third filter are arranged in the first direction, The first microlens among the plurality of microlenses is provided above a plurality of first pixels arranged in the first direction, via the first filter, the second filter, and the third filter. The solid-state imaging apparatus according to claim 1.

8. A color filter is provided between the plurality of microlenses and the plurality of pixels in a third direction perpendicular to the surface of the substrate, and includes a first filter corresponding to a first wavelength band, a second filter corresponding to a second wavelength band, and a third filter corresponding to a third wavelength band. Furthermore, it is equipped with, The first filter, the second filter, and the third filter extend in the first direction, The first filter, the second filter, and the third filter are arranged in the second direction, The first microlens among the plurality of microlenses is provided above a plurality of first pixels arranged in the first direction, via the first filter. The solid-state imaging apparatus according to claim 1.

9. In the third direction, a wiring is provided between the plurality of pixels and the color filter, having a plurality of openings, Furthermore, it is equipped with, Of the plurality of openings, the first opening extends in the first direction, The first opening is provided above the plurality of first pixels in the third direction, The dimension of the first opening along the first direction is greater than or equal to the sum of the dimensions of each of the plurality of first pixels along the first direction. The solid-state imaging apparatus according to claim 8.

Images