X-ray measurement system and integrated semiconductor inspection system

Abstract

This disclosure provides information on an X-ray measurement system and a combined semiconductor inspection system. [Solution] The X-ray measurement system comprises a multi-axis sample stage, an X-ray generator, an X-ray optical element group, an X-ray detector, and a processing unit. The X-ray generator includes an electron beam generator, an electromagnetic lens group, an X-ray target material, and a vacuum chamber. The X-ray target material receives a focused incident electron beam and generates a measurement X-ray beam. The X-ray target material comprises a heat dissipation substrate and a plurality of excitation target materials dispersed and embedded in the heat dissipation substrate. The X-ray optical element group guides the measurement X-ray beam to the sample under test. The X-ray detector receives the X-ray measurement signal and generates X-ray spectral information. The processing unit performs a fitting analysis process based on the X-ray spectral information and obtains the structural parameters of the sample under test.

Description

Technical Field

[0001] The present disclosure relates to measurement systems and inspection systems, and particularly to X-ray measurement systems and compound semiconductor inspection systems.

Background Art

[0002] The generation of X-rays starts from an X-ray tube of the prior art, and its basic combination requires a cathode and an anode target material. The cathode generates a high-voltage electron beam that collides with the anode. Depending on the different elemental compositions, the internal atoms of the anode are excited by energy and transition from a high energy level to a low energy level, and the released energy is radiated in the form of X-rays.

[0003] The most significant drawback of the prior art X-ray tube is the design and development of the solid anode. The reason is that a general solid anode is formed by thin film deposition and then collided with a high-voltage electron beam for a long time, so the anode target material is easily damaged from local damage to a wide range of damage, which clearly affects the generated X-ray flux.

[0004] To address this technical problem, a rotating anode target material and a liquid-metal jet target material have been developed in the current technology, but they still have corresponding drawbacks. The rotating anode target material utilizes the change in the position where the electron beam collides with the target material to extend the life of the target material and improve the X-ray flux, but it is necessary to recalibrate the X-ray optical path when the position of the target material is changed, and at the same time, the design of the mechanism becomes complicated. On the other hand, the liquid-metal jet target material utilizes the flow characteristics of liquid metal to improve the X-ray flux, but it has the drawback of high consumption of consumables and costs because the liquid metal needs to be replaced or replenished regularly.

Summary of the Invention

Problems to be Solved by the Invention

[0005] The technical problem that this disclosure aims to solve is to provide an X-ray measurement system and a combined semiconductor inspection system that can effectively solve the problem of anode damage by the electron beam affecting the X-ray flux, in response to the shortcomings of prior art. [Means for solving the problem]

[0006] To solve the aforementioned technical problems, one of the technical solutions adopted by this disclosure is to provide an X-ray measurement system comprising a multi-axis sample stage, an X-ray generator, an X-ray optical element group, an X-ray detector, and a processing device. The multi-axis sample stage is on which the sample to be examined is placed. The X-ray generator comprises an electron beam generator, an electromagnetic lens group, an X-ray target material, and a vacuum chamber. The electron beam generator generates an incident electron beam. The electromagnetic lens group focuses the incident electron beam. The X-ray target material is placed on a target material actuator. The X-ray target material receives the focused incident electron beam at the incident angle and generates a measurement X-ray beam. Here, the X-ray target material comprises a heat dissipation substrate and a plurality of excitation target materials dispersed and embedded in the heat dissipation substrate. The vacuum chamber houses the electron beam generator, the electromagnetic lens group, the target material actuator, and the X-ray target material. The vacuum chamber has a window through which the measurement X-ray beam passes. The X-ray optical elements guide the measurement X-ray beam to the sample under test. The X-ray detector receives the X-ray measurement signal generated when the measurement X-ray beam irradiates the sample under test, and generates X-ray spectral information corresponding to the X-ray measurement signal. The processing unit is configured to output the measurement result of the sample under test based on the X-ray spectral information.

[0007] To solve the aforementioned technical problems, another technical solution employed by this disclosure is to provide a composite semiconductor inspection system comprising a multi-axis sample stage, at least two X-ray measurement subsystems, and a processing unit. The multi-axis sample stage places the sample to be inspected. At least two X-ray measurement subsystems each include an X-ray generator, an X-ray optical element group, and an X-ray detector. The X-ray generator comprises an electron beam generator, an electromagnetic lens group, an X-ray target material, and a vacuum chamber. The electron beam generator generates an incident electron beam. The electromagnetic lens group focuses the incident electron beam and simultaneously controls the focus position of the incident electron beam. The X-ray target material is placed on a target material actuator. The X-ray target material receives the focused incident electron beam at the incident angle and generates a measurement X-ray beam. Here, the X-ray target material comprises a heat dissipation substrate and a plurality of excitation target materials dispersed and embedded in the heat dissipation substrate. The vacuum chamber houses the electron beam generator, the electromagnetic lens group, the target material actuator, and the X-ray target material. The vacuum chamber has a window through which the measurement X-ray beam passes. The X-ray optical elements guide the measurement X-ray beam to the sample under test. The X-ray detector receives the X-ray measurement signal generated when the measurement X-ray beam irradiates the sample under test and generates X-ray spectral information corresponding to the X-ray measurement signal. The processing unit is configured to output the measurement result of the sample under test based on the X-ray spectral information generated by at least two X-ray measurement subsystems.

[0008] To solve the aforementioned technical problems, another technical solution employed by this disclosure is to provide a composite semiconductor inspection system comprising a multi-axis sample stage, an optical measurement subsystem, an X-ray measurement subsystem, and a processing unit. The multi-axis sample stage holds the sample to be inspected. The optical measurement subsystem comprises a light source generator, an incident end optical element group, a light receiving end optical element group, and an optical photodetector. The light source generator generates a measurement light beam having a wavelength within an optical wavelength range covering at least the ultraviolet band to the near-infrared band. The incident end optical element group guides the measurement light beam to the sample to be inspected. The light receiving end optical element group receives an optical inspection signal generated by the irradiation of the sample to be inspected with the measurement light beam and generates optical spectral information corresponding to the optical inspection signal. The X-ray measurement subsystem comprises an X-ray generator, an X-ray optical element group, and an X-ray detector. The X-ray generator comprises an electron beam generator, an electromagnetic lens group, an X-ray target material, and a vacuum chamber. The electron beam generator generates an incident electron beam. The electromagnetic lens group focuses the incident electron beam and simultaneously controls the focus position of the incident electron beam. The X-ray target material is placed on the target material actuator. The X-ray target material receives the focused incident electron beam at the incident angle and generates a measurement X-ray beam. Here, the X-ray target material comprises a heat dissipation substrate and a plurality of excitation target materials dispersed and embedded in the heat dissipation substrate. The vacuum chamber houses the electron beam generator, the electromagnetic lens group, the target material actuator, and the X-ray target material. The vacuum chamber has a window through which the measurement X-ray beam passes. The X-ray optical element group guides the measurement X-ray beam to the sample under test. The X-ray detector receives the X-ray detection signal generated when the measurement X-ray beam is irradiated onto the sample under test and generates X-ray spectral information corresponding to the X-ray detection signal. The X-ray optical element group guides the measurement X-ray beam to the sample under test. The processing device is configured to output the measurement result of the sample under test based on the optical spectral information and the X-ray spectral information.

[0009] To further understand the features and technical content of this disclosure, please refer to the following detailed description and drawings of this disclosure, however, the drawings provided are for reference and illustrative purposes only and are not intended to limit this disclosure. [Brief explanation of the drawing]

[0010] [Figure 1] This is a functional block diagram of an X-ray measurement system according to the first embodiment of this disclosure. [Figure 2] This is a schematic diagram of the system configuration of an X-ray measurement system according to the first embodiment of this disclosure. [Figure 3] This is a schematic diagram of the configuration of an X-ray generator according to the first embodiment of this disclosure. [Figure 4] This is a first plan view of an X-ray target material according to a first embodiment of the present disclosure. [Figure 5] This is a first cross-sectional view taken along the cross-sectional line II of the X-ray target material according to the first embodiment of the present disclosure. [Figure 6] This is a second plan view of an X-ray target material according to the first embodiment of the present disclosure. [Figure 7] This is a second cross-sectional view taken along the cross-sectional line II-II of the X-ray target material according to the first embodiment of the present disclosure. [Figure 8] This is a third plan view of an X-ray target material according to the first embodiment of the present disclosure. [Figure 9] This is a third cross-sectional view taken along the cross-sectional line III-III of the X-ray target material according to the first embodiment of this disclosure. [Figure 10] This is a fourth plan view of an X-ray target material according to the first embodiment of this disclosure. [Figure 11] This is a fourth cross-sectional view taken along the cross-sectional line IV-IV of the X-ray target material according to the first embodiment of the present disclosure. [Figure 12] This is a functional block diagram of a composite semiconductor inspection system according to a second embodiment of the present disclosure. [Figure 13] This is a schematic diagram of the first operating mode of a composite semiconductor inspection system according to a second embodiment of the present disclosure. [Figure 14]This is a schematic diagram of the second operating mode of a composite semiconductor inspection system according to a second embodiment of the present disclosure. [Figure 15] This is a schematic diagram of the third operating mode of a composite semiconductor inspection system according to a second embodiment of the present disclosure. [Figure 16] This is a functional block diagram of a composite semiconductor inspection system according to a third embodiment of the present disclosure. [Figure 17] This is a plan view of the measurement structure of a composite semiconductor inspection system according to a third embodiment of the present disclosure. [Modes for carrying out the invention]

[0011] Embodiments of the "X-ray measurement system and combined semiconductor inspection system" disclosed herein will be described below with reference to specific examples. Those skilled in the art will be able to understand the advantages and effects of this disclosure from the disclosed content. This disclosure can be implemented or applied through other different specific embodiments, and various detailed descriptions herein can be modified and changed in various ways based on different perspectives and applications without departing from the spirit of this disclosure. It should also be noted in advance that the drawings herein are for illustrative purposes only and are not based on actual dimensions. The following embodiments will be used to further describe the technical content relating to this disclosure, but the disclosed content is not intended to limit the scope of protection of this disclosure. Furthermore, the term "or" herein should be understood to include any one or more of the items listed in relation to the actual situation. (First embodiment)

[0012] Figure 1 is a functional block diagram of an X-ray measurement system according to the first embodiment of this disclosure. Figure 2 is a schematic diagram of the system configuration of an X-ray measurement system according to the first embodiment of this disclosure.

[0013] As shown in Figures 1 and 2, the first embodiment of this disclosure provides an X-ray measurement system 1 comprising a multi-axis sample stage 10, an X-ray generator 12, an X-ray optical element group 14, an X-ray detector 16, and a processing device 18.

[0014] The multi-axis sample stage 10 is a multi-axis movable stage for placing the test sample SP, and examples thereof include a three-axis tilt stage or a ball socket type tilt stage. The multi-axis sample stage 10 may have a stage movement mechanism and a stage rotation mechanism. The stage movement mechanism may include, for example, stepping motors corresponding to three axes in order to move the test sample SP along one or more of the X-axis, Y-axis, and Z-axis. By controlling the stepping motors of each axis, the test sample SP can be accurately moved to various positions. When taking the ball socket type tilt stage as an example, the stage rotation mechanism may be, for example, a ball socket joint connected to the stage portion, and the test sample SP can be rotated around one or more of the X-axis, Y-axis, and Z-axis. Specifically, the rotation mechanism of the multi-axis sample stage 10 includes controlling the azimuth angle θ rotating around the Y-axis and the azimuth angle Ф rotating around the Z-axis, whereby the test sample SP can be scanned in all directions.

[0015] In an embodiment of the present disclosure, the test sample SP may be a wafer, a photomask, a photomask film, or a semiconductor element having a multilayer film. Examples thereof include a metal oxide semiconductor field effect transistor (MOSFET), a planar MOSFET, a complementary field effect transistor (CFET), a fin type field effect transistor (FinFET), a gate all around field effect transistor (GAAFET), a high electron mobility transistor (HEMT), a heterojunction field effect transistor (HFET), a dual gate MOSFET (DG-MOSFET), a fast recovery epitaxial diode field effect transistor (FREDFET), and the like.

[0016] FIG. 3 is a schematic configuration diagram of an X-ray generator according to a first embodiment of the present disclosure. As shown in FIG. 3, the X-ray generator 12 includes an electron beam generator 120, an electromagnetic lens group 122, an X-ray target material 124, and a vacuum chamber 126.

[0017] The vacuum chamber 126 has a housing space for accommodating the electron beam generator 120, electromagnetic lens group 122, target material actuator 123, and X-ray target material 124. The vacuum chamber 126 has a window 1260 through which the measurement X-ray beam passes. The vacuum chamber 126 is a chamber that can withstand high vacuum, provides a sealed space isolated from the outside, and is equipped with a vacuum pump 1262 (e.g., one or more), and the vacuum chamber 126 is 10 -7 The vacuum level can be maintained above torr, providing an environment suitable for the presence of an electron beam. The X-ray exit window is used to allow X-rays to pass through the chamber without being absorbed by the vacuum chamber. The electron beam generator 120 may include, for example, one or more cathode electron guns for generating an incident electron beam EB and impacting the X-ray target material 124 to excite the X-rays. The electromagnetic lens group 122 may include one or more electromagnetic lenses for focusing the incident electron beam EB onto the X-ray target material 124 and controlling the shape and focus position when the incident electron beam EB irradiates the X-ray target material 124.

[0018] Alternatively, the X-ray target material 124 may be placed on a target material actuator 123. The X-ray target material 124 receives a focused incident electron beam EB at a specific incident angle θi to generate a measurement X-ray beam Lx. The target material actuator 123 is a device similar to the multi-axis sample stage 10 and can rotate the X-ray target material 124 around one or more specific reference axes among the X, Y, and Z axes. The X-ray target material 124 may be made of copper, molybdenum, cobalt, or high-entropy alloy materials (HEAM). High-entropy alloy materials may include one or more of the following, for example, CuZnMnAl, AlCrTiTaZr, AlCoCrFeNiTi, AlCoCrFeNi, AlFeCrNiMo, etc. By selecting different target materials, measurement X-ray beams Lx having different energies or different wavelengths (or frequencies) may be generated.

[0019] Figure 4 is a first plan view of an X-ray target material according to a first embodiment of the present disclosure. Figure 5 is a first cross-sectional view of the X-ray target material according to a first embodiment of the present disclosure, cut along the cross-sectional line II. As shown in Figures 4 and 5, in this embodiment, the X-ray target material 124 functions as an anode and comprises a heat dissipation substrate 1240 and a plurality of excitation target materials 1242 dispersed and embedded in the heat dissipation substrate 1240. The heat dissipation substrate 1240 may be, for example, a plate-shaped body, or, for example, a circular plate-shaped body as seen from the plan view. These excitation target materials 1242 are a plurality of ring-shaped bodies arranged sequentially from the inside to the outside around the center C1 of the plate-shaped body.

[0020] More specifically, the heat dissipation substrate 1240 may be, for example, a plate-like body having a plurality of grooves, and these excitation target materials 1242 may be arranged concentrically in these grooves, that is, they may be embedded in the heat dissipation substrate 1240. As can be seen from the cross-sectional view (Figure 5), the ring body formed by each excitation target material 1242 has a rectangular cross-section, and each ring body has a light-receiving surface Sr that is not in contact with the plate-like body (heat dissipation substrate 1240). Therefore, compared to conventional X-ray target material structures, the contact area between the excitation target material 1242 and the heat dissipation substrate 1240 can be increased, allowing the X-ray target material 124 to withstand an incident electron beam EB with a higher flux, and as a result, the intensity of the generated incident X-rays Lx is improved. In some embodiments, the heat dissipation substrate 1240 may be made of a material having high thermal conductivity, such as diamond, graphite, graphene, silicon carbide, or boron nitride.

[0021] Alternatively, the X-ray target material 124 may be excited using the incident electron beam EB in various ways. For example, as shown in Figure 5, by adjusting the incident angle θi so that the X-ray target material 124 is tilted with respect to the incident electron beam EB, the line focus principle can be realized, while at the same time, repeated absorption of X-rays can be reduced, a heat dissipation effect can be achieved, and the size of the X-ray radiation can be controlled to a desired size.

[0022] In another embodiment, as shown in Figure 4, when the X-ray target material 124 receives a focused incident electron beam EB and generates a measurement X-ray beam Lx, the target material actuator 123 may rotate the X-ray target material 124 so that the incident position of the incident electron beam EB irradiating the X-ray target material 124 changes over time. For example, the target material actuator 123 may rotate the X-ray target material 124 clockwise or counterclockwise along the rotation direction Dr around the center C1, and simultaneously cause the incident electron beam EB to collide with the same point, thereby generating a stable measurement X-ray beam Lx and dissipating heat from the excitation target material 1242 and heat dissipation substrate 1240 that are not irradiated by the incident electron beam EB.

[0023] Furthermore, each ring body formed by each excitation target material 1242 has a width W1 in the radial direction of the circular plate-like body, and this width W1 may be the same or different. Here, if each width W1 is the same, there is the advantage that the manufacturing process is simpler. On the other hand, in order to equalize the lifespan of the excitation target material, by designing the width W1 of each ring body according to the electron beam shape at the time of incidence of the incident electron beam EB, the inner ring body and the outer ring body have the same irradiation area when irradiated with the incident electron beam EB, and the situation in which the lifespan of the inner ring body or the outer ring body is shortened and the entire X-ray target material 124 must be replaced does not occur.

[0024] Figure 6 is a second plan view of an X-ray target material according to a first embodiment of the present disclosure. Figure 7 is a second cross-sectional view of the X-ray target material according to a first embodiment of the present disclosure, cut along the cross-sectional line II-II. As shown in Figures 6 and 7, a first embodiment of the present disclosure provides another X-ray target material 124'. Similar to Figures 4 and 5, the excitation target material 1242' is dispersed and embedded in a heat dissipation substrate 1240'. The heat dissipation substrate 1240' may be, for example, a circular plate. These excitation target materials 1242' are a plurality of ring bodies arranged sequentially from the inside outwards around the center C2 of the plate body. Unlike Figures 4 and 5, each ring body has a triangular cross-section. The triangular cross-section is, for example, a right triangle and has a hypotenuse corresponding to the photoreceiving surface Sr. The hypotenuse is inclined at a predetermined angle θ1 with respect to the first surface S1 of the plate body, and the predetermined angles θ1 of these ring bodies are different from each other. For example, the predetermined angles θ1 of these ring bodies gradually increase outwards from the center C2 of the plate body. In some embodiments, the stepwise range of the predetermined angle θ1 may be from 30 degrees to 45 degrees, but the disclosure is not limited thereto.

[0025] In detail, the predetermined angle θ1 is the inclination angle caused by the shape of the excitation target material 1242'. This design reduces the intensity attenuation of the measurement X-ray Lx generated by multiple excitation target materials 1242' at a specific incident angle θi, and controls the intensity of the measurement X-ray Lx to be high at a specific angle. Since the photoreceiving surface Sr of the ring body formed by each excitation target material 1242' has a different angle with respect to the first surface S1, the maximum intensity of the measurement X-ray Lx that can be generated by each excitation target material 1242' corresponds to different angles. The design allows the strong measurement X-ray Lx generated by each excitation target material 1242' to be focused to the same point. Furthermore, in addition to the predetermined angle θ1 gradually changing from the center outward, it is necessary that the angular range of the predetermined angle θ1 is greater than 0 degrees.

[0026] Therefore, since multiple excitation target materials 1242' are dispersed and embedded in the heat dissipation substrate 1240', the contact area between the excitation target materials 1242' and the heat dissipation substrate 1240' can be increased, thereby enhancing the heat dissipation effect. Furthermore, by designing the angle in a specific way, strong measurement X-rays Lx can be focused to the same point, resulting in an effect similar to focusing. The X-ray target material 124', similar to those in Figures 4, 6, and 7, can also be rotated by the target material actuator 123, causing the incident position of the incident electron beam EB irradiated onto the X-ray target material 124' to change over time, further enhancing the heat dissipation effect.

[0027] Figure 8 is a third plan view of an X-ray target material according to a first embodiment of the present disclosure. Figure 9 is a third cross-sectional view of the X-ray target material according to a first embodiment of the present disclosure, cut along the cross-sectional line III-III. As shown in Figures 8 and 9, a first embodiment of the present disclosure provides another X-ray target material 124”. Similar to Figures 4 and 5, the excitation target material 1242” is dispersed and embedded in a heat dissipation substrate 1240”. These excitation target materials 1242” are a plurality of ring bodies arranged sequentially from the inside outwards around the center of a plate-like body. Viewed from a plan view, the heat dissipation substrate 1240” may be, for example, a circular plate-like body, but viewed from a side view, unlike Figures 4 and 5, the circular plate-like body is substantially a bowl-shaped plate-like body, and each ring body formed by the excitation target material 1242” is arranged around the bottom center C3 of the bowl-shaped plate-like body, and each ring body has a light-receiving surface Sr” that is not in contact with the bowl-shaped plate-like body.

[0028] Since the heat dissipation substrate 1240" is a bowl-shaped plate, the photodetector surface Sr" of the excitation target material 1242" can be changed by the shape of the heat dissipation substrate 1240", resulting in different angles of the photodetector surface Sr" relative to the incident electron beam EB. This arrangement method is similar to the design in which the angle is changed in steps, as shown in Figures 6 and 7. Therefore, similarly, the arrangement position of the excitation target material 1242" is designed to adjust the angle of each photodetector surface Sr" relative to the incident electron beam EB, thereby achieving control so that the measurement X-ray Lx has a high intensity in a specific direction.

[0029] Figure 10 is a fourth plan view of an X-ray target material according to a first embodiment of the present disclosure. Figure 11 is a fourth cross-sectional view of the X-ray target material according to a first embodiment of the present disclosure, cut along the cross-sectional line IV-IV. The heat dissipation substrate 1240''' is a plate-like body (e.g., a rectangular plate-like body), and these excitation target materials 1242''' are a plurality of block bodies arranged in an array on a first surface S1 of the plate-like body, each block body having a light-receiving surface Sr''' that is not in contact with the plate-like body.

[0030] In this example, the cross-sectional area of ​​the electron beam formed by the incident electron beam EB irradiating the X-ray target material 124''' is smaller than the area of ​​the first surface of the plate-like body. For example, the size of the incident electron beam EB colliding with the X-ray target material 124''' may be less than 50 microns × 50 microns, resulting in the formation of a smaller X-ray spot size. By dividing the excitation target material 1242''' into extremely fine pieces and dispersing and embedding them in the heat dissipation substrate 1240''', the contact area between the excitation target material 1242''' and the heat dissipation substrate 1240''' can be effectively increased.

[0031] As shown in Figures 10 and 11, each block formed by each excitation target material 1242''' is hexagonal (e.g., cube), spaced apart from each other by a vertical distance Sv and a horizontal distance Sh in a plan view, and each block has a width Wv and a width Wh in the vertical and horizontal directions, respectively. In a particular embodiment, each block is a rectangle of the same length and width in a plan view, i.e., Wv = Wh. The vertical distance Sv and the horizontal distance Sh may be, for example, half the length and width of the target material, i.e., Sv = 1 / 2Wv and Sh = 1 / 2Wh. Under this condition, the cumulative total contact area between all of the excitation target material 1242''' and the heat dissipation substrate 1240''' can be increased by more than 1x compared to the non-dispersive arrangement of excitation target material 1242''', thereby effectively enhancing the heat dissipation effect, and the X-ray target material 124''' can withstand a higher flux of the incident electron beam EB. Similarly, by adjusting the incidence angle θi so that the X-ray target material 124 is tilted with respect to the incident electron beam EB, the line focus principle can be realized, while at the same time reducing repeated absorption of X-rays, achieving a heat dissipation effect, and controlling the size of the X-ray radiation to a desired size.

[0032] It should be noted that the diameter of the incident electron beam EB is preferably greater than the side lengths (i.e., widths Wv and Wh) of the block bodies formed by each excitation target material 1242'''. For example, it may be 10, 20, 30, or 50 times the widths Wv and Wh. On the other hand, the widths Wv and Wh may be greater than or equal to the vertical distance Sv and the horizontal distance Sh, respectively. For example, the ratio of vertical distance Sv / horizontal distance Sh to width Wv / width Wh is 1:1, 1:0.5, 1:0.2, or 1:0.1.

[0033] Returning to Figures 1 and 2, the X-ray optical element group 14 guides the measurement X-ray beam Lx to the sample SP. The X-ray optical element group 14 may comprise one or more X-ray optical elements. For example, the X-ray optical element group 14 may comprise a group of X-ray mirrors, an X-ray slit, and an X-ray optical collimator, arranged in sequence between the X-ray generator 12 and the sample SP. The group of X-ray mirrors may have a multilayer structure for focusing the measurement X-ray beam Lx in the horizontal and vertical directions. The X-ray slit can be used to control the flux of the measurement X-ray beam Lx incident on the sample SP, and can also be used to control the vertical divergence angle. The measurement X-ray beam Lx is mainly used in X-ray analysis techniques and is, for example, a radiation beam with a wavelength range greater than 0.1 nanometer, such as a hard X-ray beam, a soft X-ray beam, or a gamma-ray beam.

[0034] When a measurement X-ray beam Lx is irradiated onto a sample SP, an X-ray detection signal Lx' is generated by reflection, diffraction, scattering, or transmission depending on the angle of incidence. By positioning the X-ray detector 16 appropriately, the X-ray detection signal Lx' generated by reflection, diffraction, scattering, or transmission can be received, and corresponding X-ray spectral information can be generated. The X-ray detector 16 may be a high spatial resolution detector of one dimension or more, and can receive signals for X-ray detection signals Lx' with energies exceeding 1 keV.

[0035] In the measurement process, the processing unit 18 may control the multi-axis sample stage 10 to move and / or rotate so that the X-ray detector 16 receives multiple X-ray detection signals Lx' generated at multiple X-ray measurement angles and generates multiple X-ray spectral information corresponding to these X-ray detection signals Lx'.

[0036] Furthermore, the X-ray generator 12 and the X-ray detector 16 (the X-ray generator 12 together with the X-ray detector 16) are arranged in an X-ray rotation mechanism 11. The X-ray rotation mechanism 11 may include one or more robotic arms connected to the X-ray generator 12 and the X-ray detector 16. Each robotic arm may have degrees of freedom in multiple directions. Thus, the X-ray generator 12 and the X-ray detector 16 can rotate around the sample SP simultaneously or separately. In this configuration, the processing unit 18 can control the movement and / or rotation of the multi-axis sample stage 10, while simultaneously controlling the rotation of the X-ray rotation mechanism 11. As a result, the X-ray generator 12 incidents a measurement X-ray beam Lx in multiple directions, and the X-ray detector 16 receives the generated multiple X-ray measurement signals Lx' from multiple X-ray measurement angles to generate corresponding multiple X-ray spectral information.

[0037] The processing unit 18 may be, for example, a computer system comprising a processor and memory, and may be configured to control the multi-axis sample stage 10 and the controllable elements of the X-ray measurement system 1 by executing a stored instruction set or program code. Furthermore, the processing unit 18 may be configured to output X-ray spectral information as the measurement result of the sample SP under test, or it may be configured to further fit the X-ray spectral information to obtain structural parameters of the sample SP under test as the measurement result. Structural parameters include one or more of thickness, roughness, density, critical dimension, line edge roughness, refractive index, and absorption coefficient.

[0038] For example, the processing unit 18 may perform fitting on the X-ray spectral information. The X-ray spectral information may include, for example, the reflection spectra obtained by irradiating the sample SP under test with a measurement X-ray beam Lx at multiple different incidence angles. The fitting results may include structural parameters of the sample SP under test (e.g., semiconductor devices such as MOSFETs, planar MOSFETs, CFETs, FinFETs, HEMTs, HFETs, DG-MOSFETs, FREDFETs, etc.).

[0039] In detail, the processing unit 18 may perform fitting on the X-ray spectral information to inversely reconstruct important structural parameters of the sample SP under test. The X-ray spectral information may be generated by different interaction mechanisms between the measurement X-ray beam Lx and the sample SP under test. For example, the X-ray spectral information may include X-ray reflection spectral information, X-ray scattering spectral information, X-ray diffraction spectral information, and X-ray fluorescence spectral information. Optical reflection spectral information is obtained by appropriately controlling the azimuth angles θ and Φ and collecting the X-ray sample signal Lx' generated by reflection with the X-ray detector 16. Similarly, X-ray scattering spectral information, X-ray diffraction spectral information, and X-ray fluorescence spectral information are obtained by collecting the X-ray sample signals Lx' generated by scattering, diffraction, and fluorescence excitation, respectively, with the X-ray detector 16. Therefore, in the fitting analysis process, the processing unit 18 may perform various X-ray analyses, including X-ray reflectivity (XRR) analysis, X-ray diffraction (XRD) analysis, small-angle X-ray scattering (SAX) analysis, and X-ray fluorescence (XRF) analysis, on the X-ray reflectivity spectrum information, X-ray scattering spectrum information, X-ray diffraction spectrum information, and X-ray fluorescence spectrum information, and reverse-reconstruct important structural parameters of the sample SP.

[0040] Taking XRR analysis as an example, when a measurement X-ray beam Lx is incident on a sample SP under test, and spectral signals within a certain angular range are received by an X-ray detector, an XRR spectrum is obtained, and the structural parameters of the sample SP under test can be determined by XRR analysis. For example, if the sample SP under test has a multilayer structure, the density, thickness, roughness, etc. of each layer can be determined by XRR analysis based on the collected X-ray reflection spectral information. On the other hand, if the sample SP under test has a micro-element, the orientation and size of the micro-element can be determined by XRR analysis based on the X-ray reflection spectrum. However, this disclosure is not limited thereto. The above-described X-ray analysis may be used to analyze the structural parameters of various types of sample SP under test, such as MOSFETs, planar MOSFETs, CFETs, FinFETs, GAAFETs, HEMTs, HFETs, DG-MOSFETs, and FREDFETs. (Second example)

[0041] Figure 12 is a functional block diagram of a combined semiconductor inspection system according to a second embodiment of the present disclosure. Figure 13 is a schematic diagram of the first operating mode of the combined semiconductor inspection system according to a second embodiment of the present disclosure. As shown in Figure 12, the second embodiment of the present disclosure further provides a combined semiconductor inspection system 2 comprising a multi-axis sample stage 20, X-ray measurement subsystems 22 and 24, and a processing unit 26. In this embodiment, elements identical or similar to those in the first embodiment are denoted by the same element reference numerals, and redundant descriptions are omitted.

[0042] The multi-axis sample stage 20 is similar to the multi-axis sample stage 10 of the first embodiment. The X-ray measurement subsystems 22 and 24 are basically similar to the X-ray measurement system 1. The X-ray measurement subsystem 22 comprises an X-ray generator 220, an X-ray optical element group 222, and an X-ray detector 224. The X-ray measurement subsystem 24 comprises an X-ray generator 240, an X-ray optical element group 242, and an X-ray detector 244. The X-ray generators 220 and 240 are used to generate measurement X-ray beams Lx1 and Lx2, respectively. The measurement X-ray beams Lx1 and Lx2 are, for example, radiation beams having a wavelength range greater than 0.1 nanometer, such as hard X-ray beams, soft X-ray beams, or gamma-ray beams.

[0043] It should be explained that X-ray generators 220 and 240 employ the same configuration as X-ray generator 12 in the first embodiment, and similarly use an X-ray target material embedded in a heat dissipation substrate by dispersing multiple excitation target materials as the anode, thereby improving heat dissipation efficiency. Details and advantages of X-ray generators 220 and 240 can be found in the first embodiment, so they will not be repeated here.

[0044] When the measurement X-ray beams Lx1 and Lx2 are irradiated onto the sample SP, X-ray detection signals Lx1' and Lx2' are generated by reflection, diffraction, scattering, or transmission, respectively, depending on the angle of incidence. By positioning the X-ray detectors 224 and 244 appropriately, the above-mentioned X-ray detection signals Lx1' and Lx2' generated by reflection, diffraction, scattering, or transmission can be received, respectively, and corresponding X-ray spectral information can be generated.

[0045] In the first operating mode, the X-ray detectors 224 and 244 may be positioned in the X-ray rotation mechanisms 226 and 246, respectively. The X-ray rotation mechanisms 226 and 246 may each include one or more robotic arms. Each robotic arm may have degrees of freedom in multiple directions. Thus, the X-ray detectors 224 and 244 can rotate around the sample SP simultaneously or independently.

[0046] In the first operating mode, the X-ray measurement subsystems 22 and 24 may be arranged on the same plane, and in this mode, the X-ray generators 220 and 240 may be fixed. It should be noted that the X-ray detectors 224 and 244 may be changed according to the position of the X-ray detection signals Lx1' and Lx2' generated when the measurement X-ray beams Lx1 and Lx2 are incident on the sample SP under test.

[0047] In some embodiments, the X-ray measurement paths formed by the X-ray measurement subsystems 22 and 24 may be perpendicular to each other in order to achieve anisotropic measurement requirements. For example, when the X-ray measurement subsystem 22 is taking measurements, the X-ray measurement subsystem 24 can simultaneously take measurements at a specific azimuth angle Φ, achieving simultaneous measurements in different directions. In this way, the throughput of measurement data can be greatly improved and the time required to generate X-ray spectral information can be reduced. It is also conceivable that isotropic measurement requirements can be achieved by controlling the X-ray measurement subsystems 22 and 24 to ensure consistency in the measurement conditions.

[0048] In addition to being able to control the positions of the X-ray detectors 224 and 244, the multi-axis sample stage 20 can also be changed according to the angular range to be measured. If the angular range to be measured is from θA to θB, the X-ray measurement subsystem 22 may cover measurement of the angular range from θA to (θA+θB) / 2, while the X-ray measurement subsystem 24 may cover measurement of the angular range from (θA+θB) / 2 to θB. To achieve this objective, the multi-axis sample stage 20 needs to rotate within the angular range from θA to (θA+θB) / 2. By performing measurements using the X-ray measurement subsystems 22 and 24 simultaneously and also operating the multi-axis sample stage 20, the angular range from θA to (θA+θB) / 2 and the angular range from (θA+θB) / 2 to θB can be measured simultaneously. Therefore, in the first operating mode, data for the angular range from θA to θB can be acquired in half the time. Furthermore, by fixing the X-ray generators 220 and 240, changes in the optical path due to the operation of the X-ray generators 220 and 240 can be reduced, and the time required for recalibration of the optical path can be shortened.

[0049] Figure 14 is a schematic diagram of a second operating mode of a combined semiconductor inspection system according to a second embodiment of the present disclosure. As shown in Figure 14, in the second operating mode, the X-ray generator 220 and the X-ray detector 244 may be arranged in X-ray rotation mechanisms 226 and 246, respectively. The X-ray rotation mechanisms 226 and 246 may each include one or more robotic arms. Each robotic arm may have degrees of freedom in multiple directions. Thus, the X-ray generator 220 and the X-ray detector 224 can rotate around the sample SP to be inspected simultaneously or separately.

[0050] In the second operating mode, the X-ray measurement subsystems 22 and 24 may be arranged on the same plane, but differ from Figure 13 in that the X-ray generator 240 and X-ray detector 224 located on one side of the sample SP are immovable, while the X-ray generator 220 and X-ray detector 244 located on the other side of the sample SP are movable. In other embodiments, the X-ray generator 240 and X-ray detector 224 may be located on the X-ray rotation mechanisms 226 and 246, respectively, and the X-ray generator 220 and X-ray detector 244 located on the other side of the sample SP may be arranged to be immovable.

[0051] It should be noted that the X-ray generator 220 and X-ray detector 244 may be changed according to the position of the X-ray measurement signals Lx1' and Lx2' generated when the measurement X-ray beams Lx1 and Lx2 are incident on the sample SP. If the angular range to be measured is from θA to θB, the X-ray measurement subsystem 22 may cover measurement in the angular range from θA to (θA+θB) / 2, while the X-ray measurement subsystem 24 may cover measurement in the angular range from (θA+θB) / 2 to θB. To achieve this objective, the multi-axis sample stage 20 needs to rotate in the angular range from θA to (θA+θB) / 2. By performing measurements using the X-ray measurement subsystems 22 and 24 simultaneously, and further operating the multi-axis sample stage 20, the angular range from θA to (θA+θB) / 2 and the angular range from (θA+θB) / 2 to θB can be measured simultaneously. Therefore, in the second operating mode, data from the angular range θA to θB can be acquired in half the time. Furthermore, since only the X-ray generator and X-ray detector mounted on the same side need to be operated, the operation of the mechanism can also be simplified.

[0052] Figure 15 is a schematic diagram of a third operating mode of a combined semiconductor inspection system according to a second embodiment of the present disclosure. As shown in Figure 15, in the third operating mode, the X-ray generators 220, 240 and X-ray detectors 224, 244 may be arranged in X-ray rotation mechanisms 226, 227, 246, and 247, respectively. Each of the X-ray rotation mechanisms 226, 227, 246, and 247 may comprise one or more robotic arms. Each robotic arm may have degrees of freedom in multiple directions. Thus, the X-ray generator 220 and the X-ray detector 224 can rotate around the sample SP to be inspected simultaneously or separately.

[0053] In the third operating mode, the X-ray measurement subsystems 22 and 24 are not limited to being on the same plane. On the other hand, the multi-axis sample stage 20 may be fixed, but the X-ray generators 220 and 240 are moved to specific relative positions according to the desired measurement angle range. The X-ray measurement subsystems 22 and 24 may have different measurement angle ranges. For example, if the angle range to be measured is from θA to θB, the X-ray measurement subsystem 22 may cover measurement of the angle range from θA to (θA+θB) / 2, while the X-ray measurement subsystem 24 may cover measurement of the angle range from (θA+θB) / 2 to θB. If the X-ray measurement subsystems 22 and 24 are on the same plane, the angle range from θA to (θA+θB) / 2 and the angle range from (θA+θB) / 2 to θB can be measured simultaneously, so that data from the measurement angle θA to θB can be collected in half the time in this mode. When X-ray measurement subsystems 22 and 24 are located in different spatial planes, the effect of simultaneous measurement in different directions can be obtained, and the measurement time can be reduced by half.

[0054] Furthermore, although two sets of X-ray measurement subsystems 22 and 24 are employed in this embodiment, the disclosure is not limited thereto. The number of X-ray measurement subsystems can be designed according to the user's needs. Moreover, the number of X-ray generators, X-ray optical elements, and X-ray detectors is not limited to the numbers shown in Figures 12 to 15.

[0055] Similar to the first embodiment, the processing unit 26 may output the X-ray spectral information generated by the X-ray measurement subsystems 22 and 24 as the measurement result of the sample SP under test, or it may further fit the X-ray spectral information to obtain the structural parameters of the sample SP under test as the measurement result. (Third embodiment)

[0056] Figure 16 is a functional block diagram of a combined semiconductor inspection system according to a third embodiment of the present disclosure. Figure 17 is a plan view of the measurement structure of a combined semiconductor inspection system according to a third embodiment of the present disclosure.

[0057] As shown in Figures 16 and 17, a third embodiment of the present disclosure provides a combined semiconductor inspection system 3 comprising a multi-axis sample stage 30, an optical measurement subsystem 32, an X-ray measurement subsystem 34, and a processing unit 36.

[0058] The multi-axis sample stage 30 is similar to the multi-axis sample stage 10 of the first embodiment, so its description is omitted here. The optical measurement subsystem 32 comprises a light source generator 320, an incident end optical element group 322, a light receiving end optical element group 324, and an optical photodetector 326. The light source generator 320 generates a measurement light beam Lm having a wavelength within an optical wavelength range that covers at least from the ultraviolet band to the near-infrared band. More precisely, the light source generator 320 can generate a measurement light beam Lm having a wavelength of 200 nm to 3000 nm. In some embodiments, the light source generator 320 may include elements such as a titanium-tantalum crystal laser, a mercury arc lamp, or a halogen lamp, thereby enabling the generation of measurement light beams Lm of various wavelengths.

[0059] The incident end optical element group 322 guides the measurement light beam Lm to the sample SP under test. The incident end optical element group 322 may include one or more optical elements. In this embodiment, the incident end optical element group 322 may include, for example, an optical filter, an optical collimator, an optical polarizer, and an optical compensator arranged in order between the light source generator 320 and the sample SP under test, but the disclosure is not limited thereto, and appropriate optical elements may be selected according to the user's needs. Here, the optical filter may be used to filter the measurement light beam Lm generated by the light source generator 320 to absorb stray light other than the target detection wavelength. The optical collimator may collimate the divergent light generated by the light source generator 320 into a symmetrical and orderly measurement light beam Lm. The optical polarizer filters the measurement light beam Lm to allow light in a specific direction to pass through, thereby imparting polarization characteristics to the measurement light beam Lm. The optical compensator may convert the light source that has passed through the optical polarizer into circularly polarized or elliptically polarized light.

[0060] Similarly, the light-receiving end optical element group 324 may include one or more optical elements for receiving the optical measurement signal Lm' generated when the measurement light beam Lm is irradiated onto the sample SP under test. The light-receiving end optical element group 324 may include optical elements such as an optical filter, an optical collimator, an optical polarizer, and an optical compensator, in that order. The uses of the optical filter and optical collimator will not be repeated here. The optical polarizer located at the light-receiving end may be a rotating polarizer for converting the measurement light beam Lm that has passed through the optical compensator of the incident end optical element group 322 into a light source with polarization characteristics. Similarly, the optical compensator of the light-receiving end optical element group 324 may be a rotating compensator, and its rotation improves the accuracy during measurement.

[0061] The optical receiver 326 receives the optical test signal Lm' guided via the light-receiving end optical element group 324 and generates optical spectral information corresponding to the optical test signal Lm'. The optical receiver 326 may be, for example, a spectrometer that receives the optical test signal Lm' after it has been reflected or scattered by the test sample SP.

[0062] In the measurement process, the processing unit 36 ​​may control the multi-axis sample stage 30 to move and / or rotate so that the optical receiver 326 of the optical measurement subsystem 32 receives multiple optical test signals Lm' generated at multiple optical measurement positions and / or multiple optical measurement angles, and generates multiple X-ray spectral information corresponding to these optical test signals Lm'.

[0063] Furthermore, the light source generator 320 and the optical receiver 326 are arranged in an optical rotation mechanism 328. The optical rotation mechanism 328 may include one or more robotic arms connected to the light source generator 320 and the optical receiver 326. Each robotic arm may have degrees of freedom in multiple directions. Thus, the light source generator 320 and the optical receiver 326 can rotate around the sample SP simultaneously or separately. In this configuration, the processing unit 36 ​​can control the movement and / or rotation of the multi-axis sample stage 30, while simultaneously controlling the rotation of the optical rotation mechanism 328. As a result, the light source generator 320 incidents a measurement light beam Lm in multiple directions, and the optical receiver 326 receives the generated multiple optical measurement signals Lm' from multiple optical measurement angles to generate corresponding multiple optical spectral information.

[0064] The X-ray measurement subsystem 34 is fundamentally similar to the X-ray measurement system 1. The X-ray measurement subsystem 34 comprises an X-ray generator 340, an X-ray optical element group 342, and an X-ray detector 344. It should be explained that the X-ray generator 340 employs the same configuration as the X-ray generator 12 of the first embodiment, and similarly employs an X-ray target material, in which multiple excitation target materials are dispersed and embedded in a heat dissipation substrate, as the anode, thereby improving heat dissipation efficiency. Details and advantages of the X-ray generator 340 can be found in the first embodiment, so they will not be repeated here.

[0065] The X-ray optical element group 342 guides the measurement X-ray beam Lx to the sample SP. The measurement X-ray beam Lx is mainly used in X-ray analysis techniques and is a radiation beam having a wavelength range larger than 0.1 nanometer, such as a hard X-ray beam, a soft X-ray beam, or a gamma-ray beam.

[0066] When a measurement X-ray beam Lx is irradiated onto a sample SP, an X-ray detection signal Lx' is generated by reflection, diffraction, scattering, or transmission depending on the angle of incidence. By positioning the X-ray detector 344 appropriately, the above-mentioned X-ray detection signal Lx' generated by reflection, diffraction, scattering, or transmission can be received, and corresponding X-ray spectral information can be generated. The X-ray detector 344 may be a high spatial resolution detector of one dimension or more, and can receive signals for X-ray detection signals Lx' with energies exceeding 1 keV.

[0067] In the measurement process, the processing unit 36 ​​may control the multi-axis sample stage 30 to move and / or rotate so that the X-ray detector 344 receives multiple X-ray detection signals Lx' generated at multiple optical measurement positions and / or multiple X-ray measurement angles, and generates multiple X-ray spectral information corresponding to these X-ray detection signals Lx'.

[0068] Furthermore, the X-ray generator 340 and the X-ray detector 344 are arranged in an X-ray rotation mechanism 346. The X-ray rotation mechanism 346 may include one or more robotic arms connected to the X-ray generator 340 and the X-ray detector 344. Each robotic arm may have degrees of freedom in multiple directions. Thus, the X-ray generator 340 and the X-ray detector 344 can rotate around the sample SP simultaneously or separately. In this configuration, the processing unit 36 ​​can control the movement and / or rotation of the multi-axis sample stage 30, while simultaneously controlling the rotation of the X-ray rotation mechanism 346. As a result, the X-ray generator 340 incidents a measurement X-ray beam Lx in multiple directions, and the X-ray detector 344 receives the generated multiple X-ray measurement signals Lx' from multiple X-ray measurement angles to generate corresponding multiple X-ray spectral information.

[0069] Furthermore, the combined semiconductor inspection system 3 provided in this disclosure can satisfy the requirements for anisotropic and isotropic measurements. For example, when the X-ray measurement subsystem 34 is taking measurements, the optical measurement subsystem 32 can simultaneously take measurements at a specific azimuth angle Φ, achieving simultaneous measurements in different directions. To satisfy the requirement for measurements in the same direction, after the X-ray measurement subsystem 34 has completed its measurement, the sample SP under test is rotated by rotating the multi-axis sample stage 30 along the Z-axis to the corresponding azimuth angle Φ, thereby allowing the X-ray measurement subsystem 34 and the optical measurement subsystem 32 to take measurements with the same position and spatial characteristics. This enables accurate measurement of the X-ray inspection signal Lx' and the optical inspection signal Lm' from the same azimuth and position within the same system.

[0070] The processing unit 36 ​​may be, for example, a computer system equipped with a processor and memory, and may be configured to control controllable elements of the multi-axis sample stage 30, the optical measurement subsystem 32, and the X-ray measurement subsystem 34 by executing a stored instruction set or program code. Furthermore, the processing unit 36 ​​may be configured to output optical spectral information and X-ray spectral information as measurement results of the sample SP under test, or it may be configured to further fit the optical spectral information and X-ray spectral information to obtain structural parameters of the sample SP under test as measurement results. Structural parameters include one or more of thickness, roughness, density, critical dimension, line edge roughness, refractive index, and absorption coefficient.

[0071] For example, the processing device 36 may fit optical spectral information and X-ray spectral information. The optical spectral information may include, for example, the reflection spectrum obtained by incidenting a measurement light beam Lm on the sample SP at multiple different incidence angles, and the X-ray spectral information may include, for example, the reflection spectrum obtained by incidenting a measurement X-ray beam Lx on the sample SP at multiple different incidence angles. The fitting results may also include structural parameters of the sample SP.

[0072] In more detail, the processing device 36 may perform fitting on the optical spectral information and X-ray spectral information to reverse-reconstruct important structural parameters of the sample SP.

[0073] In this embodiment, the optical spectral information may be generated by different interaction mechanisms between the measurement light beam Lm and the sample SP under test. For example, the optical spectral information may include optical reflection spectral information and optical scattering spectral information. By appropriately controlling the azimuth angles θ and Φ, the light source generator 320 incidents the measurement light beam Lm at multiple wavelengths and multiple incident angles, and the optical receiver 326 collects the optical test signal Lm' generated by reflection, thereby acquiring optical reflection spectral information. Similarly, the optical receiver 326 collects the optical test signal Lm' generated by scattering, thereby acquiring optical scattering spectral information. Therefore, in the fitting analysis process, the processing unit 36 ​​may statistically fit the optical reflection spectral information and the optical scattering spectral information to inversely reconstruct important structural parameters of the sample SP under test.

[0074] Similarly, X-ray spectral information may be generated by different interaction mechanisms between the measurement X-ray beam Lx and the sample SP under test. For example, the X-ray spectral information may include X-ray reflection spectral information, X-ray scattering spectral information, X-ray diffraction spectral information, and X-ray fluorescence spectral information. Optical reflection spectral information is obtained by appropriately controlling the azimuth angles θ and Φ and collecting the X-ray sample signal Lx' generated by reflection with the X-ray detector 344. Similarly, X-ray scattering spectral information, X-ray diffraction spectral information, and X-ray fluorescence spectral information are obtained by collecting the X-ray sample signals Lx' generated by scattering, diffraction, and fluorescence excitation, respectively, with the X-ray detector 344. Therefore, in the fitting analysis process, the processing unit 36 ​​may perform fitting analysis on the X-ray reflectance spectrum information, X-ray scattering spectrum information, X-ray diffraction spectrum information, and X-ray fluorescence spectrum information, including X-ray reflectance (XRR) analysis, X-ray diffraction (XRD) analysis, small-angle X-ray scattering (SAX) analysis, and X-ray fluorescence (XRF) analysis, to reverse-reconstruct important structural parameters of the test sample SP.

[0075] Taking XRR analysis as an example, when a measurement X-ray beam Lx is incident on the surface of a sample SP, the structural parameters of the sample SP can be determined by XRR analysis. For example, if the sample SP has a multilayer structure, the density, thickness, roughness, etc. of each layer can be determined by XRR analysis based on the collected X-ray reflection spectrum information. On the other hand, if the sample SP has a micro-element (e.g., a gate-all-around field-effect transistor (GAAFET)), the orientation and critical dimensions of the GAAFET can be determined by XRR analysis based on the X-ray reflection spectrum. (Beneficial effects of the examples)

[0076] One of the beneficial effects of this disclosure is that, in the X-ray measurement system and composite semiconductor inspection system provided herein, by using an X-ray target material doped with high-entropy alloy materials (HEAMs) as the anode and designing it to disperse and embed multiple excitation target materials in a heat dissipation substrate, the contact area between the excitation target material and the heat dissipation substrate can be increased, thereby improving heat dissipation capacity. Furthermore, by controlling the X-ray radiation size to a desired size based on the line focus principle, the problem of the anode being damaged by the electron beam and affecting the X-ray flux can be effectively solved.

[0077] Furthermore, by providing three or more relative operating modes in the composite semiconductor inspection system provided in this disclosure, the mechanical design can be simplified, the time required for optical path calibration can be reduced, and the measurement efficiency can be effectively improved by more than double.

[0078] The information disclosed herein is merely a preferred embodiment of the present disclosure and does not limit the scope of the claims herein. Accordingly, all equivalent technical modifications made using the specification and drawings of the present disclosure are included within the scope of the claims herein. [Explanation of symbols]

[0079] 1: X-ray measurement system 2, 3: Integrated semiconductor inspection system 10, 20, 30: Multi-axis sample stage 12, 220, 240, 340: X-ray generators 120: Electron beam generator 122: Electromagnetic lens group 123: Target material actuator 124, 124', 124”, 124'' X-ray target material 1240, 1240', 1240”, 1240''': Heat dissipation substrate 1242, 1242', 1242”, 1242''' Excitation target material Sr, Sr'', Sr''' light-receiving surface W1: Width 126: Vacuum Chamber 1262: Vacuum pump EB: Incident electron beam 14, 222, 242, 342: X-ray optical element group 16, 224, 244, 344: X-ray detectors 11, 226, 227, 246, 247, 346: X-ray rotation mechanism 18, 26, 36: Processing equipment 22, 24, 34: X-ray measurement subsystem 32: Optical Measurement Subsystem 320: Light source generator 322:Incidence end optical element group 324: Photodetector optical element group 326: Optical receiver SP: Test sample X, Y, Z: Axes θ,:Azimuth θ1: Predetermined angle θi: angle of incidence Lm: Measuring light beam Lx1, Lx2: X-ray beams for measurement Lm': Optically measured signal 328: Optical Rotation Mechanism Lx, Lx1, Lx2: X-ray beams for measurement Lx', Lx1', Lx2': X-ray detection signals OP: Optical measurement path II, II-II, III-III, IV-IV: Section line Sv: Vertical distance Sh: Horizontal distance Wv, Wh: width S1: 1st page Dr: Direction of rotation C1, C2: Center C3: Bottom center

Claims

1. It comprises a multi-axis sample stage, an X-ray generator, an X-ray optical element group, an X-ray detector, and a processing unit. The aforementioned multi-axis sample stage is used to place the sample to be examined, The aforementioned X-ray generator comprises an electron beam generator, an electromagnetic lens group, an X-ray target material, and a vacuum chamber. The electron beam generator generates an incident electron beam, The electromagnetic lens group focuses the incident electron beam and simultaneously controls the focusing position of the incident electron beam. The aforementioned X-ray target material is arranged in a target material actuator and comprises a heat dissipation substrate and a plurality of excitation target materials dispersed and embedded in the heat dissipation substrate, and receives the focused incident electron beam at the incident angle and generates a measurement X-ray beam. The vacuum chamber houses the electron beam generator, the electromagnetic lens group, the target material actuator, and the X-ray target material, and has a window through which the measuring X-ray beam passes. The aforementioned group of X-ray optical elements guides the measurement X-ray beam to the sample under test, The X-ray detector receives an X-ray detection signal generated when the sample under test is irradiated with the measurement X-ray beam, and generates X-ray spectral information corresponding to the X-ray detection signal. The processing device is configured to output the measurement results of the sample under test based on the X-ray spectral information. An X-ray measurement system characterized by the following features.

2. When the X-ray target material receives the focused incident electron beam and generates the measurement X-ray beam, the target material actuator operates the X-ray target material so that the incident position of the incident electron beam irradiating the X-ray target material changes over time. The X-ray measurement system according to claim 1.

3. The heat dissipation substrate is a plate-shaped body, and the plurality of excitation target materials are a plurality of ring-shaped bodies arranged sequentially from the inside outwards around the center of the plate-shaped body. The X-ray measurement system according to claim 2.

4. Each of the ring bodies has a rectangular cross-section, and each of the ring bodies has a light-receiving surface that is not in contact with the plate-shaped body. The X-ray measurement system according to claim 3.

5. Each of the ring bodies has a triangular cross-section, and the triangular cross-section has a hypotenuse that is inclined at a predetermined angle with respect to the first surface of the plate-like body, and the multiple predetermined angles of the multiple ring bodies are different from each other. The X-ray measurement system according to claim 3.

6. The multiple predetermined angles of the multiple ring bodies gradually increase from the center outward of the plate-like body. The X-ray measurement system according to claim 5.

7. The plate-like body is a bowl-shaped plate-like body, each of the ring-shaped bodies is arranged around the center of the bottom of the bowl-shaped plate-like body, and each of the ring-shaped bodies has a light-receiving surface that is not in contact with the bowl-shaped plate-like body. The X-ray measurement system according to claim 3.

8. The heat dissipation substrate is a plate-shaped body, and the plurality of excitation target materials are a plurality of block bodies arranged in an array on the first surface of the plate-shaped body, and each of the block bodies has a light-receiving surface that is not in contact with the plate-shaped body. The X-ray measurement system according to claim 2.

9. The cross-sectional area of ​​the electron beam formed on the X-ray target material when the incident electron beam irradiates the X-ray target material is smaller than the area of ​​the first surface of the plate-like body. The X-ray measurement system according to claim 3.

10. The system comprises a multi-axis sample stage, at least two X-ray measurement subsystems, and a processing unit. The aforementioned multi-axis sample stage is used to place the sample to be examined, Each of the aforementioned X-ray measurement subsystems comprises an X-ray generator, an X-ray optical element group, and an X-ray detector. The aforementioned X-ray generator comprises an electron beam generator, an electromagnetic lens group, an X-ray target material, and a vacuum chamber. The electron beam generator generates an incident electron beam, The electromagnetic lens group focuses the incident electron beam and simultaneously controls the focusing position of the incident electron beam. The aforementioned X-ray target material is arranged in a target material actuator and comprises a heat dissipation substrate and a plurality of excitation target materials dispersed and embedded in the heat dissipation substrate, and receives the focused incident electron beam at the incident angle and generates a measurement X-ray beam. The vacuum chamber houses the electron beam generator, the electromagnetic lens group, the target material actuator, and the X-ray target material, and has a window through which the measuring X-ray beam passes. The aforementioned group of X-ray optical elements guides the measurement X-ray beam to the sample under test, The X-ray detector receives an X-ray detection signal generated when the sample under test is irradiated with the measurement X-ray beam, and generates X-ray spectral information corresponding to the X-ray detection signal. The processing device is configured to output the measurement results of the sample under test based on the X-ray spectral information generated by at least two of the X-ray measurement subsystems. A composite semiconductor inspection system characterized by the following features.

11. When the X-ray target material receives the focused incident electron beam and generates the measurement X-ray beam, the target material actuator operates the X-ray target material so that the incident position of the incident electron beam irradiating the X-ray target material changes over time. The composite semiconductor inspection system according to claim 10.

12. The heat dissipation substrate is a plate-shaped body, and the plurality of excitation target materials are a plurality of ring-shaped bodies arranged sequentially from the inside outwards around the center of the plate-shaped body. The composite semiconductor inspection system according to claim 11.

13. Each of the ring bodies has a rectangular cross-section, and each of the ring bodies has a light-receiving surface that is not in contact with the plate-shaped body. The composite semiconductor inspection system according to claim 12.

14. Each of the ring bodies has a triangular cross-section, and the triangular cross-section has a hypotenuse that is inclined at a predetermined angle with respect to the first surface of the plate-like body, and the multiple predetermined angles of the multiple ring bodies are different from each other. The composite semiconductor inspection system according to claim 12.

15. The multiple predetermined angles of the multiple ring bodies gradually increase from the center outward of the plate-like body. The composite semiconductor inspection system according to claim 14.

16. The plate-like body is a bowl-shaped plate-like body, each of the ring-shaped bodies is arranged around the center of the bottom of the bowl-shaped plate-like body, and each of the ring-shaped bodies has a light-receiving surface that is not in contact with the bowl-shaped plate-like body. The composite semiconductor inspection system according to claim 12.

17. The heat dissipation substrate is a plate-shaped body, and the plurality of excitation target materials are a plurality of block bodies arranged in an array on the first surface of the plate-shaped body, and each of the block bodies has a light-receiving surface that is not in contact with the plate-shaped body. The composite semiconductor inspection system according to claim 11.

18. The cross-sectional area of ​​the electron beam formed on the X-ray target material when the incident electron beam irradiates the X-ray target material is smaller than the area of ​​the first surface of the plate-like body. The composite semiconductor inspection system according to claim 12.

19. The multi-axis sample stage includes a stage moving mechanism and a stage rotating mechanism, the stage moving mechanism moves the sample along one or more of the first axis, second axis, and third axis, the stage rotating mechanism rotates the sample along one or more of the first axis, second axis, and third axis, and the X-ray detector of each X-ray measurement subsystem is arranged in the X-ray rotating mechanism so as to rotate simultaneously or separately around the sample. The processing apparatus controls the movement and / or rotation of the multi-axis sample stage and the rotation of each X-ray rotation mechanism so that the X-ray detector of each X-ray measurement subsystem receives a plurality of X-ray detection signals and generates a plurality of X-ray spectral information corresponding to the plurality of X-ray detection signals. A composite semiconductor inspection system according to any one of claims 10 to 18.

20. The multi-axis sample stage has a stage moving mechanism and a stage rotating mechanism, the stage moving mechanism moves the sample along one or more of the first axis, second axis and third axis, the stage rotating mechanism rotates the sample along one or more of the first axis, second axis and third axis, and the X-ray generator of each X-ray measurement subsystem is arranged in the X-ray rotating mechanism so as to rotate simultaneously or separately around the sample. The processing apparatus controls the movement and / or rotation of the multi-axis sample stage and the rotation of each X-ray rotation mechanism so that the X-ray detector of each X-ray measurement subsystem receives a plurality of X-ray detection signals and generates a plurality of X-ray spectral information corresponding to the plurality of X-ray detection signals. A composite semiconductor inspection system according to any one of claims 10 to 18.

21. The X-ray generator and X-ray detector of each X-ray measurement subsystem are arranged in an X-ray rotation mechanism so as to rotate simultaneously or separately around the sample under test. The processing apparatus controls the rotation of each X-ray rotation mechanism so that the X-ray detector of each X-ray measurement subsystem receives a plurality of X-ray detection signals and generates a plurality of X-ray spectral information corresponding to the plurality of X-ray detection signals. A composite semiconductor inspection system according to any one of claims 10 to 18.

22. It comprises a multi-axis sample stage, an optical measurement subsystem, an X-ray measurement subsystem, and a processing unit. The aforementioned multi-axis sample stage is used to place the sample to be examined, The optical measurement subsystem comprises a light source generator, an incident end optical element group, a light receiving end optical element group, and an optical photodetector. The light source generator generates a measurement light beam having a wavelength within an optical wavelength range that covers at least the ultraviolet band to the near-infrared band. The group of incident end optical elements guides the measurement light beam to the sample under test. The light-receiving end optical element group receives the optical test signal generated when the measurement light beam is irradiated onto the test sample, The optical receiver receives the optically detected signal guided by the optical element group, and generates optical spectral information corresponding to the optically detected signal. The X-ray measurement subsystem comprises an X-ray generator, an X-ray optical element group, and an X-ray detector according to any one of claims 1 to 9. The aforementioned group of X-ray optical elements guides the measurement X-ray beam to the sample under test, The X-ray detector receives an X-ray detection signal generated when the sample under test is irradiated with the measurement X-ray beam, and generates X-ray spectral information corresponding to the X-ray detection signal. The processing device is configured to output the measurement results of the sample under test based on the optical spectral information and the X-ray spectral information. A composite semiconductor inspection system characterized by the following features.

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