Manufacturing method for array sensor elements

Abstract

This technology provides a solution that enables both lower resistance in the lower electrode layer and improved crystal orientation in the metal compound layer. [Solution] The method for manufacturing an array sensor element comprises: a first step of forming a first layer of the lower electrode layer on a substrate using a first metal with low resistance; a second step of oxidizing or nitriding the surface of the first layer; a third step, after the second step, of forming a second layer of the lower electrode layer on the first layer using a second metal different from the first metal by vapor phase growth; a fourth step of forming a crystalline metal compound layer on the second layer; and a fifth step of forming an upper electrode layer on the metal compound layer.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing an array sensor element.

Background Art

[0002] As a detection device in which elements having a structure in which a plurality of thin films including electrodes are laminated are arranged in an array, for example, an imaging device of Patent Document 1, an ultrasonic device of Patent Document 2, etc. are known. For the elements used in these detection devices, the technology of flat panel displays is utilized. Patent Document 3 discloses a technology for forming a wiring layer composed of a plurality of layers on a substrate, which is a technology of flat panel displays.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] For an array sensor element having the above-described element, the lower the resistance of the lower electrode layer and the better the crystal orientation of the metal compound layer laminated on the lower electrode layer, the better the performance. The reduction of the resistance of the lower electrode layer can be achieved by forming the lower electrode layer with a low-resistance metal. However, when a metal compound layer is laminated on a lower electrode layer composed of a low-resistance metal, the crystal orientation of the metal compound layer is affected by the crystal orientation of the lower electrode layer, which may cause a decrease in the performance of the array sensor element. Therefore, a technology capable of achieving both a reduction in the resistance of the lower electrode layer and an improvement in the crystal orientation of the metal compound layer is desired.

Means for Solving the Problems

[0005] A first embodiment of the present disclosure provides a method for manufacturing an array sensor element. This method for manufacturing an array sensor element comprises: a first step of forming a first layer of a lower electrode layer on a substrate using a first low-resistance metal; a second step of oxidizing or nitriding the surface of the first layer; a third step, after the second step, of forming a second layer of the lower electrode layer on the first layer using a second metal different from the first metal by vapor phase growth; a fourth step of forming a crystalline metal compound layer on the second layer; and a fifth step of forming an upper electrode layer on the metal compound layer. [Brief explanation of the drawing]

[0006] [Figure 1] This is a top view showing the schematic configuration of the array sensor element. [Figure 2] This is an explanatory diagram showing an enlarged view of a portion of the AR range in Figure 1. [Figure 3] This is a cross-sectional view showing the position III-III in Figure 2. [Figure 4] This is a cross-sectional view showing the IV-IV position in Figure 2. [Figure 5] This is a flowchart showing the manufacturing method for array sensor elements. [Figure 6] This figure shows a schematic configuration of the film deposition apparatus used in the lower electrode layer formation process. [Figure 7] This is a flowchart of the lower electrode layer formation process. [Figure 8] This is a cross-sectional view showing the structure of an array sensor element. [Figure 9] This is a cross-sectional view showing the structure of an array sensor element. [Figure 10] This is a cross-sectional view showing the structure of an array sensor element. [Figure 11] This is a cross-sectional view showing the structure of an array sensor element. [Figure 12] This figure shows an example of a thin film with an oxidized surface. [Figure 13] This figure shows the results of measuring the second layer using X-ray diffraction. [Figure 14] This figure shows the X-ray diffraction profiles of the metal compound layer and the second layer. [Figure 15] This figure shows the X-ray diffraction profiles of multiple molybdenum thin films. [Figure 16] This figure shows the X-ray diffraction profiles of multiple titanium nitride thin films. [Figure 17] This is a flowchart of the lower electrode layer formation process in the sixth embodiment. [Figure 18] This is a cross-sectional view showing the structure of the array sensor element in the sixth embodiment. [Modes for carrying out the invention]

[0007] A. First Embodiment: Figure 1 is a top view showing the schematic configuration of the array sensor element 100. Figure 1 shows arrows representing the mutually orthogonal X, Y, and Z directions. The X and Y directions are parallel to the horizontal plane. The Z direction is parallel to the vertical direction. The X, Y, and Z directions in Figure 1 and the X, Y, and Z directions in other figures point to the same directions. When specifying the direction, the positive direction indicated by the arrow is denoted as "+", and the negative direction opposite to the direction indicated by the arrow is denoted as "-", using both positive and negative signs in the direction notation. The +Z direction is also referred to as "up", and the -Z direction as "down".

[0008] The array sensor element 100 consists of a substrate 10 and a plurality of elements 20 arranged in an array on the substrate 10. Figure 1 shows an example of an array sensor element 100 having 16 elements 20. In the example shown in Figure 1, each element 20 is arranged in a 4x4 array along the X and Y directions. Alternatively, each element 20 may be arranged in a staggered pattern, alternating in the X or Y direction. Furthermore, the number of elements 20 in the array sensor element 100 is not limited to 16. The array sensor element 100 is used in flat panel displays, imaging devices for vein authentication, ultrasound devices, and the like.

[0009] The substrate 10 is formed of a material having heat resistance such as glass or silicon. The shape of the substrate 10 is a rectangular plate shape. Note that the shape of the substrate 10 may not be a rectangular plate shape, but may be a circular, elliptical, or polygonal plate shape.

[0010] The element 20 has a structure in which a plurality of thin films including electrodes are stacked. The element 20 includes a lower electrode layer 21, a metal compound layer 22, and an upper electrode layer 23, which will be described later. The lower electrode layer 21, the metal compound layer 22, and the upper electrode layer 23 are stacked in this order from the -Z direction to the +Z direction. Hereinafter, the +Z direction is also referred to as the stacking direction.

[0011] FIG. 2 is an explanatory diagram showing an enlarged view of a partial range AR in FIG. 1. FIG. 3 is a cross-sectional view showing the position III-III in FIG. 2. FIG. 4 is a cross-sectional view showing the position IV-IV in FIG. 2. Hereinafter, the detailed configuration of the array sensor element 100 will be described with reference to FIGS. 2 to 4. Note that in FIG. 2, the second insulating film 40 shown in FIGS. 3 and 4 is omitted.

[0012] A first insulating film 30 is formed on the +Z direction side of the substrate 10. The first insulating film 30 is formed of an insulating material such as silicon oxide (SiO2) or silicon nitride (SiN).

[0013] A lower electrode layer 21 is formed on the +Z side of the first insulating film 30. The lower electrode layer 21 has an element formation portion 26 for forming the element 20, a connection portion 27, and a wiring portion 28. The element formation portion 26 is formed at the position where the element 20 is placed. The shape of the element formation portion 26 when viewed in the -Z direction is circular. The connection portion 27 connects element formation portions 26 that are adjacent to each other in the X direction. The wiring portion 28 is formed on the +X side of the element formation portion 26 at the +X side end and is connected to the element formation portion 26 at the +X side end. Electricity is supplied to the wiring portion 28 from the outside. That is, electricity is supplied to each element formation portion 26 via the wiring portion 28 and the connection portion 27. The lower electrode layer 21 consists of a first layer and a second layer stacked on the first layer. Details of the stacked structure of the lower electrode layer 21 will be described later.

[0014] A crystalline metal compound layer 22 is formed on the +Z side of the first insulating film 30 and the lower electrode layer 21. The metal compound layer 22 is formed on the +Z side of the element formation section 26. The metal compound layer 22 is also formed on the +Z side of the connection section 27 and on the portion of the first insulating film 30 on the +Z side where the lower electrode layer 21 is not laminated. The metal compound layer 22 laminated on the +Z side of the element formation section 26 forms the element 20. The shape of the metal compound layer 22 forming the element 20 is a circular shape with a smaller diameter than the element formation section 26 when viewed in the -Z direction. In this embodiment, the metal compound layer 22 is formed from aluminum nitride (AlN).

[0015] An upper electrode layer 23 is formed on the +Z direction side of the metal compound layer 22 stacked in the element formation section 26. The shape of the upper electrode layer 23, as viewed in the -Z direction, is circular in diameter, smaller than that of the metal compound layer 22 that constitutes the element 20.

[0016] A second insulating film 40 is formed on the +Z direction side of the first insulating film 30, the lower electrode layer 21, the metal compound layer 22, and the upper electrode layer 23. The second insulating film 40 is formed to cover the portion of the above-described components excluding the central part of the upper electrode layer 23 and the wiring portion 28. The second insulating film 40 is made of an insulating material such as SiO2 or SiN.

[0017] A second electrode wiring 51 is formed on the +Z direction side of the upper electrode layer 23 and the second insulating film 40. The second electrode wiring 51 connects the upper electrode layer 23 of each element 20, which is arranged along the Y direction, to the second electrode drive wiring 52 provided at the +Y direction end of each row. Here, the second electrode drive wiring 52 is a wiring formed in the same layer as the lower electrode layer 21 using the same material, on the +Y direction side of the element 20 located at the +Y direction end. Electricity is supplied to the second electrode drive wiring 52 from the outside. That is, electricity is supplied to the upper electrode layer 23 of each element 20 via the second electrode drive wiring 52 and the second electrode wiring 51. The second electrode wiring 51 is laminated on the upper electrode layer 23 so as to cover the outer periphery of the upper electrode layer 23. The shape of the second electrode wiring 51 laminated on the upper electrode layer 23 is annular when viewed from the Z direction. The second electrode wiring 51 is formed from a metallic material such as titanium or molybdenum.

[0018] Figure 5 is a flowchart showing the manufacturing method of the array sensor element 100. First, in step S10, a first insulating film 30 is deposited on the +Z side of the substrate 10 by sputtering. Note that the first insulating film 30 is not limited to sputtering and may be deposited by any known film deposition technique.

[0019] In step S20, a lower electrode layer formation process is performed. The lower electrode layer formation process is a process of forming a lower electrode layer 21 on the +Z direction side of the first insulating film 30.

[0020] Figure 6 shows a schematic configuration of the film deposition apparatus 200 used in the lower electrode layer formation process. The film deposition apparatus 200 is a multi-chamber type sputtering apparatus. The film deposition apparatus 200 comprises a first chamber 210, a second chamber 220, a third chamber 230, a heat chamber 240, and a transport chamber 250.

[0021] The first chamber 210 has a first target 211 made of a first metal, which is a low-resistance metal, inside it. The film deposition apparatus 200 deposits a film containing the first metal on the substrate 10 by magnetron sputtering in the first chamber 210. The film deposition apparatus 200 may also deposit a film containing the first metal by a sputtering method other than magnetron sputtering.

[0022] The second chamber 220 is provided to allow oxygen-containing gas or air to flow into it. The flow time or flow rate of the oxygen-containing gas or air flowing into the second chamber 220 can be set. The film deposition apparatus 200 first evacuates the second chamber 220 by driving a vacuum pump (not shown), and then fills the second chamber 220 with oxygen-containing gas or air by introducing oxygen-containing gas or air into the second chamber 220.

[0023] The third chamber 230 contains a second target 231 made of a second metal, which is a different metal from the first metal. The deposition apparatus 200 deposits a film containing the second metal onto the substrate 10 by magnetron sputtering in the third chamber 230. The deposition apparatus 200 may also deposit a film containing the second metal by a sputtering method other than magnetron sputtering.

[0024] The heat chamber 240 has a heating unit 241 inside it. The heating unit 241 is, for example, an oven-type or hot plate-type heating device.

[0025] The transport chamber 250 is connected to each chamber. A transport robot 251 is installed inside the transport chamber 250. The transport robot 251 transports the substrate 10 to each chamber.

[0026] Figure 7 is a flowchart of the lower electrode layer formation process. Figures 8 to 11 are cross-sectional views showing the structure of the array sensor element 100 at each step of the lower electrode layer formation process. The lower electrode layer formation process will be described below with reference to Figures 7 to 11.

[0027] First, in step S110, the array sensor element 100, with the first insulating film 30 deposited on the substrate 10, is heated in the heat chamber 240. Preferably, the heating unit 241 in the heat chamber 240 heats the array sensor element 100 so that its temperature reaches 150°C. After the array sensor element 100 is heated, the transport robot 251 transports the array sensor element 100 from the heat chamber 240 to the first chamber 210.

[0028] In step S120, the first layer 110 of the lower electrode layer 21 is deposited on the +Z side of the first insulating film 30 using the first metal. The first layer 110 of the lower electrode layer 21 is deposited by magnetron sputtering in the first chamber 210. That is, step S120 is performed in the first chamber 210. The first metal is an aluminum alloy. In this embodiment, the first metal is Al-Cu. The first metal may also be Al-Cu-Si or Al-Pd, etc. The first layer 110 is deposited so that the sheet resistance is 0.5 Ω / □ or less. Figure 8 shows the state in which the first layer 110 has been deposited on the +Z side of the first insulating film 30. After the first layer 110 has been deposited, the transport robot 251 transports the array sensor element 100 from the first chamber 210 to the second chamber 220. Step S120 is also called the first step.

[0029] In step S130, the first layer 110 is oxidized to a depth of 3 nm or more and 10 nm or less from the surface of the first layer 110. The surface of the first layer 110 is oxidized when an oxygen-containing gas or atmosphere is introduced into the second chamber 220 while the array sensor element 100 is transported into the second chamber 220. That is, step S130 is performed inside the second chamber 220. The array sensor element 100 is preferably left inside the second chamber 220 for about 1 to 3 hours with an oxygen-containing gas or atmosphere introduced into the second chamber 220. At this time, the temperature inside the second chamber 220 is preferably 20°C or higher and 30°C or lower. The humidity inside the second chamber 220 is preferably 40% or higher and 60% or lower. Figure 9 shows the state in which the surface of the first layer 110 has been oxidized and an oxide film 111 has been formed. After the surface of the first layer 110 is oxidized, the transport robot 251 transports the array sensor element 100 from the second chamber 220 to the heat chamber 240. Step S130 is also called the second step.

[0030] Figure 12 shows an example of a thin film with an oxidized surface. Figure 12 shows an image of a molybdenum thin film with an oxidized surface, captured from the side using a scanning transmission electron microscope. Figure 12 shows two transmission electron images and two scattered electron images. The black area in the center of the transmission electron image, and the white area in the center of the scattered electron image, correspond to the molybdenum thin film. A carbon vapor-deposited film is deposited on the molybdenum thin film to make the location of the oxide film formed on its surface clearer. The white area on top of the molybdenum thin film in the transmission electron image, and the black area on top of the molybdenum thin film in the scattered electron image, correspond to the molybdenum thin film. In the example shown in Figure 12, it can be confirmed that an oxide film with a thickness of 10 nm or less is formed between the molybdenum thin film and the carbon vapor-deposited film.

[0031] In step S140 of Figure 7, the array sensor element 100 is heated in the heat chamber 240. Preferably, the heating unit 241 in the heat chamber 240 heats the array sensor element 100 so that its temperature reaches 150°C. After the array sensor element 100 is heated, the transport robot 251 transports the array sensor element 100 from the heat chamber 240 to the third chamber 230.

[0032] In step S150, the second layer 120 of the lower electrode layer 21 is deposited on the +Z side of the first layer 110 using the second metal. The second layer 120 of the lower electrode layer 21 is deposited by magnetron sputtering in the third chamber 230. That is, step S150 is performed in the third chamber 230. In this embodiment, the second metal is metallic titanium (Ti). Figure 10 shows the state in which the second layer 120 has been deposited on the +Z side of the first layer 110. The second layer 120 is deposited so as to cover the entire +Z side of the first layer 110. Step S150 is also called the third step. The second layer 120 may be deposited by a vapor phase growth method other than sputtering. For example, the second layer 120 may be deposited by vacuum deposition, ion plating, plasma CVD, atomic layer deposition, etc.

[0033] In step S160, the lower electrode layer 21 is patterned. Specifically, a resist mask is formed on the second layer 120 of the lower electrode layer 21, and the lower electrode layer 21 is patterned by dry etching. In step S160, the first layer 110 and the second layer 120 are patterned together. Figure 11 shows the lower electrode layer 21 after patterning. Note that the first layer 110 and the second layer 120 of the lower electrode layer 21 may be patterned separately rather than together in step S160. For example, the first layer 110 may be patterned immediately after being deposited in step S120, and the second layer 120 may be patterned in step S160. The lower electrode layer formation process is performed as described above.

[0034] The second electrode drive wiring 52 shown in Figure 4 is formed simultaneously with the lower electrode layer 21 during the lower electrode layer formation process. However, the second electrode drive wiring 52 may be formed separately from the lower electrode layer 21.

[0035] In step S30 of Figure 5, a crystalline metal compound layer 22 is deposited on the +Z side of the lower electrode layer 21. Specifically, after the metal compound layer 22 is deposited by sputtering, a resist mask is formed on the metal compound layer 22, and the metal compound layer 22 is patterned by dry etching. Note that the metal compound layer 22 may be formed by any known deposition technique, not limited to the method described above. Step S30 is also called the fourth step.

[0036] In step S40, the upper electrode layer 23 is deposited on the +Z direction side of the metal compound layer 22 stacked on the element formation portion 26 of the lower electrode layer 21. Specifically, after the upper electrode layer 23 is deposited by sputtering, a resist mask is formed on the upper electrode layer 23, and the upper electrode layer 23 is patterned by dry etching. Note that the upper electrode layer 23 may be deposited by any known deposition technique, not limited to the method described above. Step S40 is also called the fifth step.

[0037] In step S50, the second insulating film 40 is deposited on the +Z side of the first insulating film 30, the lower electrode layer 21, the metal compound layer 22, and the upper electrode layer 23. Specifically, after the second insulating film 40 is deposited by sputtering, a resist mask is formed on the second insulating film 40, and the second insulating film 40 is patterned by dry etching. Note that the second insulating film 40 is not limited to the method described above, but may be deposited by any known film deposition technique.

[0038] In step S60, the second electrode wiring 51 is formed on the upper electrode layer 23, the second insulating film 40, and the +Z direction side of the second electrode drive wiring 52. Specifically, after the second electrode wiring 51 is deposited by sputtering, a resist mask is formed on the second electrode wiring 51, and the second electrode wiring 51 is patterned by dry etching. Note that the second electrode wiring 51 may be formed by any known film deposition technique, not limited to the method described above. The array sensor element 100 is manufactured as described above.

[0039] The first layer 110 and the second layer 120 of the lower electrode layer 21, and the metal compound layer 22 are crystalline thin films. The crystal structure and crystal orientation of the first layer 110, the second layer 120, and the metal compound layer 22 will be described below. In the following, crystal orientation will also be simply referred to as orientation.

[0040] The first layer 110 is formed from Al-Cu, which is the first metal. The crystal structure of Al-Cu is a face-centered cubic lattice structure. The surface of the first layer 110 is oxidized in step S130 of the lower electrode layer formation treatment. As a result, the crystal structure of the surface of the first layer 110 is broken down and becomes amorphous.

[0041] The second layer 120 is formed from the second metal, titanium (Ti). The crystal structure of Ti is a hexagonal close-packed structure. Therefore, the dominant crystal structure of the second layer 120 is a hexagonal close-packed structure. Here, "dominant crystal structure" means the crystal structure that is most abundant when a thin film contains multiple types of crystal structures. The second layer 120 is deposited on the +Z side of the first layer 110. Generally, the orientation of a crystal is influenced by the orientation of the crystal of the layer below it. Therefore, the orientation of the second layer 120 is influenced by the orientation of the first layer 110. However, in this embodiment, the surface of the first layer 110 is amorphous due to oxidation, so the second layer 120 is not influenced by the orientation of the first layer 110 and grows with its own orientation. Specifically, the Ti of the second layer 120 grows with a (002) orientation. Therefore, the dominant crystal orientation of the second layer 120 is (002). Here, "dominant crystal orientation" refers to the crystal orientation that is most abundant when multiple crystals with different crystal orientations are contained in the thin film. Note that the dominant crystal structure of the surface of the second layer 120 may be a hexagonal close-packed structure, rather than the entire layer. Also, the dominant crystal orientation of the surface of the second layer 120 may be (002), rather than the entire layer.

[0042] Figure 13 shows the results of measuring the second layer 120 by X-ray diffraction. Figure 13 shows the X-ray diffraction profile created with the diffraction angle 2θ on the horizontal axis and the detection intensity on the vertical axis. In Figure 13, the measurement results of the second layer 120 in this embodiment are shown by a dashed line, and the measurement results of the second layer 120 deposited on the first layer 110, which has an unoxidized surface, are shown by a solid line. The peak around the diffraction angle 2θ of 35° corresponds to the diffraction peak due to the (100) plane of Ti, and the peak around the diffraction angle 2θ of 39° corresponds to the diffraction peak due to the (002) plane of Ti. As shown in Figure 13, the intensity of the diffraction peak due to the (002) plane of Ti in this embodiment is higher than the intensity of the diffraction peak due to the (002) plane of Ti in the second layer 120 deposited on the first layer 110, which has an unoxidized surface. In other words, the second layer 120 of this embodiment has a higher degree of (002) orientation than the second layer 120 that is deposited on the first layer 110 whose surface has not been oxidized.

[0043] The metal compound layer 22 is formed from aluminum nitride (AlN). The crystal structure of AlN is a hexagonal wurtzite structure. Therefore, the metal compound layer 22 has a crystal structure predominantly of the hexagonal wurtzite structure. As described above, in this embodiment, the metal compound layer 22 and the second layer 120 have a hexagonal crystal structure. In other words, the crystal structure of the metal compound layer 22 and the crystal structure of the second layer 120 are similar. The metal compound layer 22 is deposited on the +Z side of the second layer 120. The orientation of the metal compound layer 22 is influenced by the orientation of the underlying second layer 120, so the AlN in the metal compound layer 22 is predominantly (002) oriented. In other words, the dominant crystal orientation of the metal compound layer 22 is (002). That is, the dominant crystal orientation of the metal compound layer 22 coincides with the dominant crystal orientation of the second layer 120.

[0044] Figure 14 shows the X-ray diffraction profiles of the metal compound layer 22 and the second layer 120 measured by X-ray diffraction. The peak at diffraction angle 2θ around 36° corresponds to the diffraction peak due to the (002) plane of AlN in the metal compound layer 22, and the peak at diffraction angle 2θ around 39° corresponds to the diffraction peak due to the (002) plane of Ti in the second layer 120. The difference between the diffraction peak due to the (002) plane of AlN and the diffraction peak due to the (002) plane of Ti is approximately 3° in the horizontal direction. In other words, the difference between the diffraction angle 2θ peak of the second layer 120 and the diffraction angle 2θ peak of the metal compound layer 22 is within 5° in the horizontal direction.

[0045] The manufacturing method for the array sensor element 100 in the first embodiment described above comprises: a first step of forming a first layer 110 of the lower electrode layer 21 using a low-resistance first metal; a second step of oxidizing the surface of the first layer 110; a third step of forming a second layer 120 of the lower electrode layer 21 on the first layer 110 using a second metal different from the first metal, after the second step; and a fourth step of forming a crystalline metal compound layer 22 on the second layer 120. Because the surface of the first layer 110 is oxidized in the second step, the orientation of the second layer 120 laminated on the first layer 110 is no longer affected by the orientation of the first layer 110, and the crystals of the second layer 120 grow with their own orientation. The orientation of the metal compound layer 22 laminated on the second layer 120 is affected by the orientation of the second layer 120, not by the orientation of the first layer 110 which is composed of a low-resistance metal. Therefore, the orientation of the metal compound layer 22 can be improved. Consequently, both the lower electrode layer 21's resistance and the metal compound layer 22's orientation can be improved, thereby enhancing the performance of the array sensor element 100.

[0046] Furthermore, in this embodiment, the dominant crystal structure of at least the surface layer of the second layer 120 is similar to the dominant crystal structure of the metal compound layer 22. Since the orientation of the metal compound layer 22 is influenced by the orientation of the second layer 120, if the dominant crystal structure of at least the surface layer of the second layer 120 is not similar to the dominant crystal structure of the metal compound layer 22, it becomes difficult to form a metal compound layer 22 with the desired orientation. In this embodiment, the orientation of the metal compound layer 22 can be further improved compared to the case described above, and the performance of the array sensor element 100 can be further improved.

[0047] Furthermore, in this embodiment, the dominant crystal orientation of at least the surface layer of the second layer 120 coincides with the dominant crystal orientation of the metal compound layer 22. Since the orientation of the metal compound layer 22 is influenced by the orientation of the second layer 120, if the dominant crystal orientation of at least the surface layer of the second layer 120 does not coincide with the dominant crystal orientation of the metal compound layer 22, it becomes difficult to form a metal compound layer 22 with the desired orientation. In this embodiment, the orientation of the metal compound layer 22 can be further improved compared to the case described above, and the performance of the array sensor element 100 can be further improved.

[0048] Furthermore, in this embodiment, the second layer 120 and the metal compound layer 22 are measured by X-ray diffraction, and in the X-ray diffraction profile created with the diffraction angle 2θ on the horizontal axis and the detection intensity on the vertical axis, the difference between the diffraction angle 2θ peak of the second layer 120 and the diffraction angle 2θ peak of the metal compound layer 22 is within 5° in the horizontal direction. Since the orientation of the metal compound layer 22 is affected by the orientation of the second layer 120, if the difference between the diffraction angle 2θ peak of the second layer 120 and the diffraction angle 2θ peak of the metal compound layer 22 is greater than 5° in the horizontal direction, it becomes difficult to form a metal compound layer 22 with the desired orientation. In this embodiment, the orientation of the metal compound layer 22 can be further improved compared to the case described above, and the performance of the array sensor element 100 can be further improved.

[0049] Furthermore, in this embodiment, the sheet resistance of the first layer 110 is 0.5Ω / □ or less. Therefore, the resistance of the lower electrode layer 21 can be reduced, and the performance of the array sensor element 100 can be further improved.

[0050] Furthermore, in this embodiment, in the second step, the first layer 110 is oxidized to a depth of 3 nm to 10 nm from the surface of the first layer 110. Therefore, compared to the case where the first layer 110 is oxidized to a depth of less than 3 nm from the surface of the first layer 110, the second layer 120 can be made less susceptible to the influence of the orientation of the first layer 110. Also, compared to the case where the first layer 110 is oxidized to a depth greater than 10 nm from the surface of the first layer 110, the increase in electrical resistance between the first layer 110 and the second layer 120 can be suppressed.

[0051] Furthermore, in this embodiment, the first step is performed in a first chamber 210 having a first target 211 made of a first metal, the second step is performed in a second chamber 220, and the third step is performed in a third chamber 230 having a second target 231 made of a second metal. Therefore, compared to the case where the first to third steps are performed in a single chamber, the deterioration of the first target 211 and the second target 231 can be suppressed.

[0052] Furthermore, in this embodiment, the second chamber 220 is capable of receiving oxygen-containing gas or air, and in the second step, the surface of the first layer 110 is oxidized by oxygen or air. Since the second step is performed inside the second chamber 220, degradation of the first target 211 and the second target 231 by oxygen or air can be suppressed.

[0053] Furthermore, in this embodiment, the second chamber 220 allows setting the inflow time or flow rate of oxygen-containing gas or air flowing into the second chamber 220. Therefore, the user can set the inflow time or flow rate of oxygen-containing gas or air to an optimal value for the array sensor element 100 in the first chamber 210.

[0054] B. Second Embodiment: In the second embodiment, the type of second metal differs from that in the first embodiment. In the second embodiment, the second metal is metallic molybdenum (Mo). The structure of the array sensor element 100 and the method of manufacturing the array sensor element 100 in the second embodiment are the same as in the first embodiment.

[0055] The crystal structure of Mo is a body-centered cubic lattice structure. Therefore, the dominant crystal structure of the second layer 120 is a body-centered cubic lattice structure. In addition, (110) orientation is dominant for Mo. Therefore, the dominant crystal orientation of the second layer 120 is (110).

[0056] Figure 15 shows the X-ray diffraction profiles of multiple molybdenum thin films deposited at different target-substrate distances, measured by X-ray diffraction. As shown in Figure 15, the X-ray diffraction profile of the molybdenum thin film has a peak at a diffraction angle 2θ of approximately 40°. This peak corresponds to the diffraction peak due to the (110) plane of Mo. As mentioned above, the diffraction peak due to the (002) plane of AlN is located at a diffraction angle 2θ of approximately 36°. Therefore, the difference between the diffraction peak due to the (002) plane of AlN and the diffraction peak due to the (110) plane of Mo is approximately 4° in the horizontal direction.

[0057] According to the second embodiment described above, in the X-ray diffraction profile, the difference between the diffraction angle 2θ peak of the second layer 120 and the diffraction angle 2θ peak of the metal compound layer 22 is within 5° in the horizontal direction. Therefore, similar to the first embodiment, the orientation of the metal compound layer 22 can be further improved compared to the case where the difference between the diffraction angle 2θ peak of the second layer 120 and the diffraction angle 2θ peak of the metal compound layer 22 is greater than 5° in the horizontal direction, and the performance of the array sensor element 100 can be further improved.

[0058] C. Third Embodiment: In the third embodiment, the type of second metal differs from that of the first embodiment. In the second embodiment, the second metal is titanium nitride (TiN). The structure of the array sensor element 100 and the method for manufacturing the array sensor element 100 in the third embodiment are the same as in the first embodiment.

[0059] The crystal structure of TiN is a face-centered cubic lattice structure. Therefore, the dominant crystal structure of the second layer 120 is a face-centered cubic lattice structure. In addition, the (111) orientation is dominant in TiN. Therefore, the dominant crystal orientation of the second layer 120 is (111).

[0060] Figure 16 shows the X-ray diffraction profiles of multiple titanium nitride thin films deposited at different temperatures, measured by X-ray diffraction. As shown in Figure 16, the X-ray diffraction profile of the titanium nitride thin film has a peak at a diffraction angle 2θ of approximately 35°. This peak corresponds to the diffraction peak due to the (111) plane of TiN. As mentioned above, the diffraction peak due to the (002) plane of AlN is located at a diffraction angle 2θ of approximately 36°. Therefore, the difference between the diffraction peak due to the (002) plane of AlN and the diffraction peak due to the (111) plane of TiN is approximately 1° in the horizontal direction.

[0061] According to the third embodiment described above, in the X-ray diffraction profile, the difference between the diffraction angle 2θ peak of the second layer 120 and the diffraction angle 2θ peak of the metal compound layer 22 is within 5° in the horizontal direction. Therefore, similar to the first embodiment, the orientation of the metal compound layer 22 can be further improved compared to the case where the difference between the diffraction angle 2θ peak of the second layer 120 and the diffraction angle 2θ peak of the metal compound layer 22 is greater than 5° in the horizontal direction, and the performance of the array sensor element 100 can be further improved.

[0062] D. Fourth Embodiment: In the fourth embodiment, the lower electrode layer formation process shown in Figure 7 differs from that of the first embodiment. The manufacturing method of the array sensor element 100 and the structure of the array sensor element 100, other than the lower electrode layer formation process, are the same as in the first embodiment.

[0063] In the fourth embodiment, the first chamber 210 is provided to allow oxygen-containing gas or air to flow into it. The flow time or flow rate of the oxygen-containing gas or air flowing into the first chamber 210 can be set. The film deposition apparatus 200 fills the first chamber 210 with oxygen-containing gas or air by first evacuating the first chamber 210 using a vacuum pump (not shown) and then allowing oxygen-containing gas or air to flow into the first chamber 210. In the fourth embodiment, the film deposition apparatus 200 does not need to include a second chamber 220.

[0064] In the fourth embodiment, the second step, step S130, is performed in the first chamber 210 immediately after the first step, step S120, has been performed in the first chamber 210. After the first layer 110 is formed in step S120, the transport robot 251 does not transport the array sensor element 100 from the first chamber 210 to the second chamber 220. In step S130, the surface of the first layer 110 is oxidized by introducing an oxygen-containing gas or air into the first chamber 210. After the surface of the first layer 110 is oxidized, the transport robot 251 transports the array sensor element 100 from the first chamber 210 to the heat chamber 240.

[0065] According to the fourth embodiment described above, the first step is performed in the first chamber 210, and the second step is performed in the first chamber 210 after the first step has been performed. Therefore, compared to the case where the first and second steps are performed in separate chambers, there is no need to move the array sensor element 100, and the lower electrode layer 21 can be formed in a shorter time.

[0066] Furthermore, in this embodiment, the first chamber 210 allows setting the inflow time or flow rate of the oxygen-containing gas or atmosphere flowing into the first chamber 210. Therefore, the user can set the inflow time or flow rate of the oxygen-containing gas or atmosphere to an optimal value for the array sensor element 100 in the first chamber 210.

[0067] E. Fifth Embodiment: In the fifth embodiment, the lower electrode layer formation process shown in Figure 7 differs from that of the first embodiment. The manufacturing method of the array sensor element 100 and the structure of the array sensor element 100, other than the lower electrode layer formation process, are the same as in the first embodiment.

[0068] In the fifth embodiment, the third chamber 230 is provided to allow oxygen-containing gas or air to flow into it. The flow time or flow rate of the oxygen-containing gas or air flowing into the third chamber 230 can be set. The film deposition apparatus 200 fills the third chamber 230 with oxygen-containing gas or air by first evacuating the third chamber 230 using a vacuum pump (not shown) and then allowing oxygen-containing gas or air to flow into the third chamber 230. In the fifth embodiment, the film deposition apparatus 200 does not need to include the second chamber 220.

[0069] In the fifth embodiment, the second step, step S130, is performed in the third chamber 230. After the first layer 110 is formed in step S120, the transport robot 251 transports the array sensor element 100 from the first chamber 210 to the third chamber 230. In step S130, the surface of the first layer 110 is oxidized by introducing an oxygen-containing gas or air into the third chamber 230 while the array sensor element 100 is transported into the third chamber 230. The third step, step S150, is performed in the third chamber 230 after the second step has been performed.

[0070] According to the fifth embodiment described above, the second step is performed in the third chamber 230, and the third step is performed in the third chamber 230 after the second step has been performed. Therefore, the number of chambers used for forming the lower electrode layer 21 can be reduced.

[0071] Furthermore, in this embodiment, the third chamber 230 allows setting the inflow time or flow rate of the oxygen-containing gas or atmosphere flowing into the third chamber 230. Therefore, the user can set the inflow time or flow rate of the oxygen-containing gas or atmosphere to an optimal value for the array sensor element 100 in the third chamber 230.

[0072] F. Sixth Embodiment: In the sixth embodiment, the lower electrode layer 21f is composed of a base layer 101, a first layer 110 laminated on the base layer 101, and a second layer 120 laminated on the first layer 110. In the sixth embodiment, the content of the lower electrode layer formation process differs from that of the first embodiment. The manufacturing method of the array sensor element 100, other than the lower electrode layer formation process, is the same as in the first embodiment.

[0073] Figure 17 is a flowchart of the lower electrode layer formation process in the sixth embodiment. Parts that perform the same processes as in the lower electrode layer formation process in the first embodiment are denoted by the same reference numerals and their descriptions are omitted.

[0074] In step S115, a base layer 101 of the lower electrode layer 21f is deposited on the +Z side of the first insulating film 30 using the second metal. The base layer 101 of the lower electrode layer 21f is deposited by magnetron sputtering in the third chamber 230. That is, step S115 is performed in the third chamber 230. After the base layer 101 is deposited, the transport robot 251 transports the substrate 10 from the third chamber 230 to the first chamber 210. Then, in step S120, the first layer 110 of the lower electrode layer 21f is deposited on the +Z side of the base layer 101 using the first metal. Figure 18 shows the state after the lower electrode layer formation process has been performed and the lower electrode layer 21f including the base layer 101 has been formed. Note that the base layer 101 may be formed from a metal different from the first metal and the second metal.

[0075] According to the sixth embodiment described above, the orientation of the metal compound layer 22 can be improved, similar to the first embodiment.

[0076] G. Other embodiments: (G-1) In the above embodiment, in step S130 of the lower electrode layer formation process, the surface of the first layer 110 is oxidized. Alternatively, in step S130 of the lower electrode layer formation process, the surface of the first layer 110 may be nitrided.

[0077] (G-2) In the first embodiment, the second layer 120 is formed from Ti and the metal compound layer 22 is formed from AlN. In the first embodiment, the dominant crystal structure of at least the surface layer of the second layer 120 is similar to that of the metal compound layer 22, and the dominant crystal orientation of at least the surface layer of the second layer 120 is the same as that of the metal compound layer 22. In contrast, the second layer 120 and the metal compound layer 22 may be formed from materials in which the dominant crystal structure of at least the surface layer of the second layer 120 is similar to that of the metal compound layer 22, and the dominant crystal orientation of at least the surface layer of the second layer 120 is the same as that of the metal compound layer 22. Furthermore, the second layer 120 and the metal compound layer 22 may be formed from materials such that the dominant crystal structure of at least the surface layer of the second layer 120 is not similar to the dominant crystal structure of the metal compound layer 22, and the dominant crystal orientation of at least the surface layer of the second layer 120 is the same as the dominant crystal orientation of the metal compound layer 22.

[0078] (G-3) In the above embodiment, the sheet resistance of the first layer 110 is 0.5Ω / □ or less. However, the sheet resistance of the first layer 110 may be higher than 0.5Ω / □.

[0079] (G-4) In the above embodiment, the first layer 110 is formed of an aluminum alloy such that the sheet resistance is 0.5 Ω / □ or less. In contrast, the first layer 110 may be formed of a metal other than an aluminum alloy such that the sheet resistance is 0.5 Ω / □ or less.

[0080] (G-5) In the above embodiment, the first metal is an aluminum alloy. However, the first metal may be a metal other than an aluminum alloy.

[0081] (G-6) In the above embodiment, the second metal is metallic titanium, metallic molybdenum, or titanium nitride. In contrast, the second metal may be a metal other than metallic titanium, metallic molybdenum, or titanium nitride.

[0082] (G-7) In the above embodiment, in step S130, which is the second step of the lower electrode layer formation process, the first layer 110 is oxidized to a depth of 3 nm or more and 10 nm or less from the surface of the first layer 110. Alternatively, in step S130, the first layer 110 may be oxidized to a depth of less than 3 nm from the surface of the first layer 110, or to a depth greater than 10 nm from the surface of the first layer 110.

[0083] (G-8) In the above embodiment, the array sensor element 100 is heated in the heat chamber 240 during steps S110 and S140 of the lower electrode layer formation process. In contrast, the array sensor element 100 does not need to be heated during the lower electrode layer formation process. That is, steps S110 and S140 of the lower electrode layer formation process do not need to be performed.

[0084] (G-9) In the above embodiment, the metal compound layer 22 is formed from AlN. However, the metal compound layer 22 may be formed from a crystalline metal compound other than AlN.

[0085] (G-10) In the above embodiment, a first insulating film 30 is formed on the +Z side of the substrate 10. In contrast, instead of the first insulating film 30, a TFT layer, a planarization layer, and a passivation layer may be formed on the +Z side of the substrate 10 in this order from the -Z direction to the +Z direction. The TFT layer is a layer that forms a thin film transistor. The planarization layer is formed from, for example, a photosensitive resin. The passivation layer is formed from, for example, SiN.

[0086] (G-11) In the above embodiment, the shape of the element formation portion 26 of the lower electrode layer 21, the metal compound layer 22 constituting the element 20, and the upper electrode layer 23 as viewed in the -Z direction is circular. In contrast, the shape of the element formation portion 26 of the lower electrode layer 21, the metal compound layer 22 constituting the element 20, and the upper electrode layer 23 as viewed in the -Z direction is not limited to a circular shape, but may be an ellipse or a rounded rectangle, etc.

[0087] H. Other forms: This disclosure is not limited to the embodiments described above, and can be implemented in various forms without departing from its spirit. For example, this disclosure can also be implemented in the following forms. The technical features in the embodiments described below that correspond to the technical features in each of the forms described below can be replaced or combined as appropriate in order to solve some or all of the problems of this disclosure, or to achieve some or all of the effects of this disclosure. Furthermore, if such technical features are not described as essential in this specification, they can be deleted as appropriate.

[0088] (1) According to a first embodiment of the present disclosure, a method for manufacturing an array sensor element is provided. This method for manufacturing an array sensor element comprises: a first step of forming a first layer of a lower electrode layer on a substrate using a first low-resistance metal; a second step of oxidizing or nitriding the surface of the first layer; a third step, after the second step, of forming a second layer of the lower electrode layer on the first layer using a second metal different from the first metal by vapor phase growth; a fourth step of forming a crystalline metal compound layer on the second layer; and a fifth step of forming an upper electrode layer on the metal compound layer. In this configuration, the surface of the first layer is oxidized or nitrided, so the orientation of the second layer stacked on top of the first layer is no longer affected by the orientation of the first layer, and the crystal of the second layer grows with its own orientation. The orientation of the metal compound layer stacked on top of the second layer is affected by the orientation of the second layer, not by the orientation of the first layer which is composed of a low-resistance first metal. Therefore, both low resistance of the lower electrode layer and improved orientation of the metal compound layer can be achieved. Consequently, the performance of the array sensor element can be improved.

[0089] (2) In the above embodiment, the dominant crystal structure of at least the surface layer of the second layer and the dominant crystal structure of the metal compound layer may be similar. Since the orientation of the metal compound layer is influenced by the orientation of the second layer, if the dominant crystal structure of at least the surface layer of the second layer is not similar to the dominant crystal structure of the metal compound layer, it becomes difficult to form a metal compound layer with the desired orientation. With this configuration, the orientation of the metal compound layer can be further improved compared to the case described above, and the performance of the array sensor element can be further improved.

[0090] (3) In the above embodiment, the dominant crystal orientation of at least the surface of the second layer may coincide with the dominant crystal orientation of the metal compound layer. Since the orientation of the metal compound layer is influenced by the orientation of the second layer, if the dominant crystal orientation of at least the surface of the second layer does not match the dominant crystal orientation of the metal compound layer, it becomes difficult to form a metal compound layer with the desired orientation. With this configuration, the orientation of the metal compound layer can be further improved compared to the case described above, and the performance of the array sensor element can be further improved.

[0091] (4) In the above embodiment, the second layer and the metal compound layer are measured by X-ray diffraction, and in the X-ray diffraction profile created with the diffraction angle 2θ on the horizontal axis and the detection intensity on the vertical axis, the difference between the peak of the diffraction angle 2θ of the second layer and the peak of the diffraction angle 2θ of the metal compound layer may be within 5° in the horizontal direction. Since the orientation of the metal compound layer is affected by the orientation of the second layer, if the difference between the diffraction angle 2θ peak of the second layer and the diffraction angle 2θ peak of the metal compound layer is greater than 5° in the transverse direction, it becomes difficult to form a metal compound layer with the desired orientation. With this configuration, the orientation of the metal compound layer can be further improved compared to the case described above, and the performance of the array sensor element can be further improved.

[0092] (5) In the above embodiment, the sheet resistance of the first layer may be 0.5Ω / □ or less. This configuration allows for lower resistance in the lower electrode layer, further improving the performance of the array sensor element.

[0093] (6) In the above embodiment, the first metal may be an aluminum alloy.

[0094] (7) In the above embodiment, the second metal may be metallic titanium or metallic molybdenum.

[0095] (8) In the above embodiment, in the second step, the first layer may be oxidized or nitrided to a depth of 3 nm or more and 10 nm or less from the surface of the first layer. With this configuration, the second layer can be made less susceptible to the orientation of the first layer compared to the case where the first layer is oxidized to a depth of less than 3 nm from the surface of the first layer. Furthermore, compared to the case where the first layer is oxidized to a depth of more than 10 nm from the surface of the first layer, the increase in electrical resistance between the first and second layers can be suppressed.

[0096] (9) In the above embodiment, the first step may be performed in a first chamber having a first target made of the first metal, the second step may be performed in a second chamber, and the third step may be performed in a third chamber having a second target made of the second metal. This configuration allows for suppression of the degradation of the first and second targets compared to the case where the first to third steps are performed in a single chamber.

[0097] (10) In the above embodiment, the second chamber is capable of receiving oxygen-containing gas or air, and in the second step, the surface of the first layer may be oxidized by the air or gas. Since the second step is performed in a second chamber, this configuration makes it possible to suppress the degradation of the first and second targets by oxygen or air.

[0098] (11) In the above configuration, the second chamber may be capable of setting the inflow time or flow rate of the air or gas flowing into the second chamber. In this configuration, the user can set the inflow time or flow rate of oxygen-containing gas or air to an optimal value for the array sensor elements in the first chamber.

[0099] (12) In the above embodiment, the first step may be performed in the first chamber, and the second step may be performed in the first chamber after the first step has been performed. With this configuration, compared to the case where the first and second steps are performed in separate chambers, there is no need to move the array sensor elements, so the lower electrode layer can be formed in a shorter time.

[0100] (13) In the above embodiment, the first chamber is capable of receiving oxygen-containing gas or air, and in the second step, the surface of the first layer may be oxidized by the air or gas.

[0101] (14) In the above configuration, the first chamber may be capable of setting the inflow time or flow rate of the air or gas flowing into the first chamber. In this configuration, the user can set the inflow time or flow rate of oxygen-containing gas or air to an optimal value for the array sensor elements in the first chamber.

[0102] (15) In the above embodiment, the second step may be performed in the third chamber, or the third step may be performed in the third chamber after the second step has been performed. This configuration allows for a reduction in the number of chambers used to form the lower electrode layer.

[0103] (16) In the above embodiment, the third chamber is capable of receiving oxygen-containing gas or air, and in the second step, the surface of the first layer may be oxidized by the air or gas.

[0104] (17) In the above embodiment, the third chamber may be capable of setting the inflow time or flow rate of the air or gas flowing into the third chamber. In this configuration, the user can set the inflow time or flow rate of oxygen-containing gas or air to an optimal value for the array sensor elements in the third chamber. [Explanation of Symbols]

[0105] 10...Substrate, 20...Element, 21,21f...Lower electrode layer, 22...Metal compound layer, 23...Upper electrode layer, 26...Element formation section, 27...Connection section, 28...Wiring section, 30...First insulating film, 40...Second insulating film, 51...Second electrode wiring, 52...Second electrode drive wiring, 100...Array sensor element, 101...Base layer, 110...First layer, 111...Oxide film, 120...Second layer, 200...Film deposition apparatus, 210...First chamber, 211...First target, 220...Second chamber, 230...Third chamber, 231...Second target, 240...Heat chamber, 241...Heating section, 250...Transportation chamber, 251...Transportation robot

Claims

1. A method for manufacturing an array sensor element, A first step involves forming a first layer of the lower electrode layer on a substrate using a first low-resistance metal, A second step of oxidizing or nitriding the surface of the first layer, A third step is performed after the second step, in which a second layer of the lower electrode layer is formed on the first layer using a second metal different from the first metal by vapor phase growth, A fourth step involves forming a crystalline metal compound layer on the second layer, The process includes a fifth step of forming an upper electrode layer on the metal compound layer. A method for manufacturing array sensor elements.

2. A method for manufacturing an array sensor element according to claim 1, The dominant crystal structure of at least the surface layer of the second layer and the dominant crystal structure of the metal compound layer are similar. A method for manufacturing array sensor elements.

3. A method for manufacturing an array sensor element according to claim 1, The dominant crystal orientation of at least the surface of the second layer coincides with the dominant crystal orientation of the metal compound layer. A method for manufacturing array sensor elements.

4. A method for manufacturing an array sensor element according to claim 1, The second layer and the metal compound layer are measured by X-ray diffraction, and in the X-ray diffraction profile created with the diffraction angle 2θ on the horizontal axis and the detection intensity on the vertical axis, the difference between the peak of the diffraction angle 2θ of the second layer and the peak of the diffraction angle 2θ of the metal compound layer is within 5° in the horizontal direction. A method for manufacturing array sensor elements.

5. A method for manufacturing an array sensor element according to claim 1, The sheet resistance of the first layer is 0.5Ω / □ or less. A method for manufacturing array sensor elements.

6. A method for manufacturing an array sensor element according to claim 5, The first metal is an aluminum alloy. A method for manufacturing array sensor elements.

7. A method for manufacturing an array sensor element according to claim 1, The second metal is metallic titanium or metallic molybdenum. A method for manufacturing array sensor elements.

8. A method for manufacturing an array sensor element according to claim 1, In the second step, the first layer is oxidized or nitrided to a depth of 3 nm or more and 10 nm or less from the surface of the first layer. A method for manufacturing array sensor elements.

9. A method for manufacturing an array sensor element according to claim 1, The first step is performed in a first chamber having a first target made of the first metal, The second step is performed in the second chamber, The third step is performed in a third chamber having a second target made of the second metal, A method for manufacturing array sensor elements.

10. A method for manufacturing an array sensor element according to claim 9, The second chamber is capable of allowing oxygen-containing gas or air to flow into it. In the second step, the surface of the first layer is oxidized by the atmosphere or the gas. A method for manufacturing array sensor elements.

11. A method for manufacturing an array sensor element according to claim 10, The second chamber is capable of setting the inflow time or flow rate of the air or gas flowing into the second chamber. A method for manufacturing array sensor elements.

12. A method for manufacturing an array sensor element according to claim 1, The first step is performed in the first chamber, The second step is performed in the first chamber after the first step has been performed. A method for manufacturing array sensor elements.

13. A method for manufacturing an array sensor element according to claim 12, The first chamber is capable of allowing oxygen-containing gas or air to flow into it. In the second step, the surface of the first layer is oxidized by the atmosphere or the gas. A method for manufacturing array sensor elements.

14. A method for manufacturing an array sensor element according to claim 13, The first chamber is capable of setting the inflow time or flow rate of the air or gas flowing into the first chamber. A method for manufacturing array sensor elements.

15. A method for manufacturing an array sensor element according to claim 1, The second step is performed in the third chamber, The third step is performed in the third chamber after the second step has been performed. A method for manufacturing array sensor elements.

16. A method for manufacturing an array sensor element according to claim 15, The third chamber is capable of allowing oxygen-containing gas or air to flow into it. In the second step, the surface of the first layer is oxidized by the atmosphere or the gas. A method for manufacturing array sensor elements.

17. A method for manufacturing an array sensor element according to claim 16, The third chamber is capable of setting the inflow time or flow rate of the air or gas flowing into the third chamber. A method for manufacturing array sensor elements.

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