Substrate processing equipment

Abstract

The present invention provides a substrate processing apparatus that can suppress the inclusion of fine particles in the gas discharged from the processing chamber for processing substrates to the outside of the substrate processing apparatus. [Solution] The substrate processing apparatus according to the embodiment comprises a processing chamber 50 that constitutes a space for processing a substrate W, a rotating holding unit 10 that holds and rotates the substrate W, a processing liquid supply unit 20 that supplies processing liquid to the substrate W held by the rotating holding unit 10, an exhaust unit 70 having an exhaust passage for discharging gas discharged from inside the processing chamber 50 to the outside, and a removal unit 80 arranged inside the exhaust passage and having nozzles 81, 82 that discharge a mist-like cleaning liquid.

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus.

Background Art

[0002] A single wafer type substrate processing apparatus is an apparatus that processes substrates one by one by supplying a processing liquid to the surface of a substrate while rotating the substrate such as a semiconductor wafer. The single wafer type substrate processing apparatus has an advantage that the processing conditions can be finely adjusted according to the differences in film thickness and the like formed on each substrate, as compared with a batch type substrate processing apparatus that immerses a plurality of substrates in a processing liquid at once.

[0003] As the processing liquid supplied to the substrate, for example, SPM (sulfuric acid-hydrogen peroxide mixture), which is a mixture of a sulfuric acid solution and an aqueous hydrogen peroxide solution, is used.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] When SPM is supplied to the substrate, an atmosphere containing a large number of fine particles called fumes may be generated due to the reaction between sulfuric acid and hydrogen peroxide water. In order to keep the inside of the processing chamber for processing the substrate clean, the introduction of clean gas into the inside of the processing chamber and the exhaust of the inside of the processing chamber are performed.

[0006] The exhaust gas from the substrate processing equipment is sent to a pollution control system (exhaust gas treatment system) installed in the factory where the processing equipment is located, after being rendered harmless by the system, before being released into the external environment. However, if the exhaust gas from the substrate processing equipment contains particulate matter, it can put a strain on the pollution control system.

[0007] Embodiments of the present invention have been made to solve the above-mentioned problems, and their objective is to provide a substrate processing apparatus that can suppress the inclusion of fine particles in the gas discharged from the processing chamber for processing substrates to the outside of the substrate processing apparatus. [Means for solving the problem]

[0008] The substrate processing apparatus according to the present invention is A processing chamber that constitutes the space for processing substrates, A rotating holding unit that holds and rotates the substrate, A processing liquid supply unit that supplies processing liquid to the substrate held by the rotating holding unit, An exhaust section having an exhaust passage for discharging gas discharged from inside the processing chamber to the outside, A removal unit is located inside the exhaust passage and has a nozzle that discharges a mist-like cleaning liquid, It is equipped with. [Effects of the Invention]

[0009] According to embodiments of the present invention, it is possible to suppress the inclusion of fine particles in the gas discharged from the processing chamber for processing substrates to the outside of the substrate processing apparatus. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic axial cross-sectional view showing the configuration of a substrate processing apparatus according to the embodiment. [Figure 2] This is a schematic plan view showing the configuration of the substrate processing apparatus as seen from the position of line AA in Figure 1. [Figure 3]This is a partially enlarged view of the axial cross-section of the substrate processing apparatus according to the embodiment. [Figure 4] This is an axial cross-sectional view of the substrate processing apparatus as seen from the position of line BB in Figure 1. [Figure 5] This diagram illustrates the appearance of the mist-like cleaning solution supplied to the exhaust duct. [Figure 6] This is a flowchart showing the operation of the substrate processing apparatus according to the embodiment. [Figure 7] This diagram schematically shows an example of a substrate processing apparatus equipped with a heating unit. [Modes for carrying out the invention]

[0011] Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the specification and claims of this application, "up" indicates the direction that the mounting surface of the substrate processing apparatus (e.g., the factory floor) faces when the substrate processing apparatus is installed in a state where it can be used normally, and "down" indicates the direction opposite to "up". Furthermore, with respect to the center of the substrate processing apparatus in a plan view, the direction away from the center is called "outside", and the direction towards the center is called "inside".

[0012] As an example of a substrate processing apparatus according to the embodiment of the present invention, a substrate processing apparatus is described in which a mixture of sulfuric acid (H2SO4) solution and hydrogen peroxide (H2O2) aqueous solution (SPM, sulfuric acid-hydrogen peroxide mixture) is supplied as a processing solution to a semiconductor wafer on which a resist has been formed on its surface, in order to remove at least a portion of the resist. However, the type of substrate to be processed and the type of processing solution are not limited thereto.

[0013] [overview] As shown in FIG. 1, the substrate processing apparatus 1 of the present embodiment holds and rotates the substrate W carried into the processing chamber 50 by the rotation holding unit 10, and supplies the processing liquid from the processing liquid supply unit 20 to the substrate W to process the substrate W. A clean gas is supplied from the gas supply unit 60 to the inside of the processing chamber 50. Further, the inside of the processing chamber 50 is exhausted by the exhaust unit 70.

[0014] A mist-like cleaning liquid is supplied from the removing unit 80 to the inside of the exhaust paths (the first exhaust path 710 and the second exhaust path 720) of the exhaust unit 70. Fine particles generated and floating due to the supply of the processing liquid and contained in the exhaust from the inside of the processing chamber 50 are captured by the mist-like cleaning liquid and discharged from the discharge port 73a. Thereby, fine particles can be removed from the exhaust, and it is possible to suppress the gas discharged from the substrate processing apparatus 1 to the outside from containing fine particles.

[0015] [Configuration of Substrate Processing Apparatus 1] The configuration of the substrate processing apparatus 1 will be described with reference to FIGS. 1 and 2. FIG. 1 is an axial cross-sectional view schematically showing the configuration of the substrate processing apparatus 1. FIG. 2 is a plan view schematically showing the configuration of the substrate processing apparatus 1 as viewed from the position of the line A-A in FIG. 1.

[0016] The substrate processing apparatus 1 includes a rotation holding unit 10, a processing liquid supply unit 20, a rinse liquid supply unit 30, a recovery unit 40, a processing chamber 50, a gas supply unit 60, an exhaust unit 70, a removing unit 80, and a control device 90.

[0017] (Rotation Holding Unit 19) The rotation holding unit 10 holds the substrate W and rotates it about the axis Z. The rotation holding unit 10 includes a rotation table 11, a holding unit 12, and a rotation driving unit 13. The rotation table 11 is positioned substantially at the center inside the processing chamber 50. The upper surface of the rotation table 11 is formed into a circular surface larger than the substrate W and faces the substrate W with a gap therebetween.

[0018] The holding portion 12 holds the substrate W horizontally on the rotary table 11, with a gap between it and the upper surface of the rotary table 11. Multiple holding portions 12 are provided on the upper surface of the rotary table 11 at predetermined intervals along the outer edge of the substrate W. In this embodiment, six holding portions 12 are provided as shown in Figure 2. The holding portion 12 is provided so as to be movable between a holding position, which holds the substrate W by contacting the outer edge of the substrate W, and a release position, which releases the substrate W by moving away from the outer edge of the substrate W, by an opening and closing mechanism (not shown). The center of the substrate W held by the holding portion 12 in the holding position is positioned to coincide with axis Z.

[0019] The rotary drive unit 13 is a drive mechanism that rotates the rotary table 11. The rotary drive unit 13 has a rotating shaft connected to the center of the rotary table 11 and a motor that rotates the rotating shaft. The rotary drive unit 13 rotates the rotary table 11 around axis Z via the rotating shaft driven by the motor. As the rotary table 11 rotates, the substrate W held by the holding unit 12 rotates around axis Z.

[0020] (Processing liquid supply unit 20) The processing liquid supply unit 20 supplies processing liquid to the substrate W held by the holding unit 12. In this embodiment, the processing liquid supply unit 20 supplies a mixture (SPM) of sulfuric acid (H2SO4) solution and hydrogen peroxide (H2O2) aqueous solution to the substrate W as processing liquid. The processing liquid supply unit 20 includes a nozzle 21, a swinging arm 22, a swinging mechanism 23, a processing liquid supply pipe 24, a sulfuric acid supply pipe 25, and a hydrogen peroxide water supply pipe 26.

[0021] The nozzle 21 (processing liquid nozzle) is attached to the oscillating arm 22 and is positioned by the oscillating mechanism 23 so as to be able to oscillate in a horizontal plane above the rotary table 11. The nozzle 21 is positioned facing the vicinity of the center of the substrate W held by the holding part 12 and discharges the processing liquid toward the substrate W.

[0022] The oscillating arm 22 is a member that holds the nozzle 21. The oscillating arm 22 is formed in a rod shape, with the nozzle 21 attached to one end. The other end of the oscillating arm 22, opposite to the nozzle 21, is connected to the oscillating mechanism 23. The oscillating arm 22 is supported by the oscillating mechanism 23 so as to extend horizontally. The oscillating mechanism 23 supports the oscillating arm 22 and causes the oscillating arm 22 to oscillate in the horizontal plane with the oscillating mechanism 23 as the pivot axis. The nozzle 21 moves by the oscillating mechanism 23 between a discharge position facing the center of the substrate W held by the holding part 12 and a retracted position which is outside the rotary table 11.

[0023] The processing liquid supply pipe 24 is a pipe for supplying processing liquid to the nozzle 21. The tip of the processing liquid supply pipe 24 is connected to the nozzle 21. The rear end of the processing liquid supply pipe 24 is connected to the sulfuric acid supply pipe 25 and the hydrogen peroxide water supply pipe 26 via a connection part 24a.

[0024] The sulfuric acid supply pipe 25 is a pipe for supplying sulfuric acid (H2SO4) solution, which is sent from a sulfuric acid solution supply source (e.g., a tank) located outside the substrate processing apparatus 1 (not shown), to the processing liquid supply pipe 24. The hydrogen peroxide water supply pipe 26 is a pipe for supplying hydrogen peroxide (H2O2) aqueous solution, which is sent from a hydrogen peroxide aqueous solution supply source (e.g., a tank) located outside the substrate processing apparatus 1 (not shown), to the processing liquid supply pipe 24. The sulfuric acid solution supplied by the processing liquid supply pipe 24 and the hydrogen peroxide water supplied by the hydrogen peroxide water supply pipe 26 merge at the connection part 24a to form a mixed liquid (SPM), which is then supplied to the processing liquid supply pipe 24. This mixed liquid then passes through the processing liquid supply pipe 24 and is discharged from the nozzle 21.

[0025] In this embodiment, as shown in Figure 1, the mixing unit 24a, where the sulfuric acid solution and the hydrogen peroxide aqueous solution are mixed, is located inside the processing chamber 50. This shortens the time from when the SPM is generated until it is discharged from the nozzle 21. By shortening the time from when the SPM is generated until it is discharged from the nozzle 21, highly active SPM can be supplied to the substrate W.

[0026] (Rinsing liquid supply unit 30) The rinse liquid supply unit 30 supplies rinse liquid to the substrate W held by the holding unit 12. In this embodiment, the rinse liquid supply unit 30 supplies pure water to the substrate W as rinse liquid. The rinse liquid supply unit 30 includes a nozzle 31, a swinging arm 32, a swinging mechanism 33, and a rinse liquid supply pipe 34.

[0027] The nozzle 31 (rinsing liquid nozzle) is attached to the oscillating arm 32 and is positioned by the oscillating mechanism 33 so as to be able to oscillate in a horizontal plane above the rotary table 11. The nozzle 31 is positioned facing the center of the substrate W held by the holding part 12 and discharges the rinsing liquid toward the substrate W.

[0028] The oscillating arm 32 is a member that holds the nozzle 31. The oscillating arm 32 is formed in a rod shape, with the nozzle 31 attached to one end. The other end of the oscillating arm 32, opposite to the nozzle 31, is connected to the oscillating mechanism 33. The oscillating arm 32 is supported by the oscillating mechanism 33 so as to extend horizontally. The oscillating mechanism 33 supports the oscillating arm 32 and causes the oscillating arm 32 to oscillate in the horizontal plane with the oscillating mechanism 33 as the pivot axis. The nozzle 31 moves by the oscillating mechanism 33 between a discharge position facing the center of the substrate W held by the holding part 12 and a retracted position which is outside the rotary table 11.

[0029] The rinse liquid supply pipe 34 is a pipe for supplying rinse liquid to the nozzle 31. The tip of the rinse liquid supply pipe 34 is connected to the nozzle 31. The rear end of the rinse liquid supply pipe 34 is connected to a pipe extending from a pure water production device installed in the factory where the substrate processing device 1 is installed. The rinse liquid (pure water) supplied from the pure water production device passes through the rinse liquid supply pipe 34 and is discharged from the nozzle 31.

[0030] (Recovery section 40) The recovery unit 40 is supplied to the substrate W and recovers the processing liquid or rinsing liquid that is scattered from the substrate W due to the rotation of the substrate W. The recovery unit 40 has a first cup 41, a second cup 42, a first liquid receiving section 43, a second liquid receiving section 44, a first lifting mechanism 45 (see Figure 2), and a second lifting mechanism 46 (see Figure 1).

[0031] The first cup 41 receives the processing liquid or rinsing liquid scattered from the substrate W and causes it to fall downward. The first cup 41 is a cylindrical body formed so as to narrow in diameter at the top, and is provided so as to surround the rotary table 11 with the axis of rotation Z of the rotary table 11 as its center. The processing liquid or rinsing liquid scattered from the substrate W due to the rotation of the substrate W collides with the inner surface of the first cup 41 and is received, and flows downward along the inner surface.

[0032] The first cup 41 is provided to be movable between an upper position and a lower position by a first lifting mechanism 45. The upper position is a position where the upper end of the first cup 41 is above the height of the substrate W held by the holding part 12, and can receive processing liquid or rinsing liquid splashed from the substrate W. The lower position is a position where the upper end of the first cup 41 is at the same height as or lower than the height of the upper surface of the rotary table 11, and can load or unload the substrate W.

[0033] The second cup 42 receives the processing liquid or rinsing liquid scattered from the substrate W and allows it to fall downward. The second cup 42 is a cylindrical body formed so that its diameter narrows at the top. The second cup 42 is provided between the rotary table 11 and the first cup 41, so as to surround the rotary table 11 with the axis of rotation Z of the rotary table 11 as its center. The processing liquid or rinsing liquid scattered from the substrate W due to the rotation of the substrate W collides with the inner surface of the second cup 42 and is received, and flows downward along the inner surface. Furthermore, a recess 42a is formed on the lower side of the second cup 42. The recess 42a is open at the bottom and forms a space that extends upward from the opening.

[0034] The second cup 42 is provided to be movable between an upper position and a lower position by a second lifting mechanism 46. The upper position is when the upper end of the second cup 42 is above the height of the substrate W held by the holding part 12, and can receive processing liquid or rinsing liquid splashed from the substrate W. The lower position is when the upper end of the second cup 42 is below the height of the upper surface of the rotary table 11, and can load or unload the substrate W. Furthermore, when the first cup 41 is positioned in the upper position, the second cup can be positioned in the lower position to allow the first cup 41 to receive processing liquid or rinsing liquid splashed from the substrate W. In other words, the position of the second cup 42 switches which of the first cup 41 and the second cup 42 receives the processing liquid or rinsing liquid splashed from the substrate W.

[0035] The first liquid receiving section 43 is received by the first cup 41 and collects the processing liquid or rinsing liquid that has fallen downward. The second liquid receiving section 44 is received by the second cup 42 and collects the processing liquid or rinsing liquid that has fallen downward. The first liquid receiving section 43 and the second liquid receiving section 44 are integrally formed and separated by a partition wall 431. The area outside the partition wall 431 is the first liquid receiving section 43, and the area inside the partition wall 431 is the second liquid receiving section 44.

[0036] The partition wall 431 is positioned opposite the recess 42a of the second cup 42. When the second cup 42 moves from the upper position to the lower position, the recess 42a moves downward, causing the partition wall 431 to be inserted into the recess 42a. The partition wall 431 and the recess 42a are provided in a non-contact manner with a gap between them, allowing gas to flow between the partition wall 431 and the recess 42a.

[0037] The first liquid receiving section 43 is an annular container with an open top. An outlet 430 is formed on the bottom surface of the first liquid receiving section 43. The processing liquid or rinsing liquid collected in the first liquid receiving section 43 is discharged through the outlet 430 and collected or disposed of outside the substrate processing apparatus 1.

[0038] The second liquid receiving section 44 is an annular container with an open top. An outlet 440 is formed on the bottom surface of the second liquid receiving section 44. The processing liquid or rinsing liquid collected in the second liquid receiving section 44 is discharged from the outlet 430 and collected or disposed of outside the substrate processing apparatus 1.

[0039] The first lifting mechanism 45 is connected to the first cup 41 and moves the first cup 41 in a direction parallel to axis Z. The second lifting mechanism 46 is connected to the second cup 42 and moves the second cup 42 in a direction parallel to axis Z. For example, a cylinder, a ball screw mechanism, etc., can be used as the first lifting mechanism 45 and the second lifting mechanism 46.

[0040] Now, with reference to Figure 3, the structure of the recovery unit 40 will be described in more detail. Figure 3 is a partially enlarged view of the axial cross-section of the substrate processing apparatus 1. In Figure 3, the first cup 41 and the second cup 42 are positioned in the upper position.

[0041] As shown in Figure 3, the lower end of the first cup 41 has a tapered surface 41a that curves inward as it extends downward. The upper end of the outer side wall of the first liquid receiving portion 43 has a tapered surface 43a that curves outward as it extends upward. In this embodiment, the tapered surface 41a and the tapered surface 43a are arranged to be parallel to each other. Furthermore, when the first cup 41 is in the upper position, the lower end of the tapered surface 41a of the first cup 41 is positioned above the upper end of the tapered surface 43a of the first liquid receiving portion 43.

[0042] As a result, the tapered surface 41a of the first cup 41 and the tapered surface 43a of the first liquid receiving portion 43 form a gas flow path 47 which is inclined upward as it moves outward. The gas flow path 47 has the role of connecting the space inside the first cup 41 to the connecting portion 730, which will be described later.

[0043] Furthermore, as described above, the second cup 42 is provided in a non-contact manner with respect to the partition wall 431 via a gap formed by a recess 42a on its lower side. As a result, the space inside the second cup 42 is also in communication with the communication section 730 via this gap, the interior of the first cup 41, and the gas flow path 47. Since the second cup 42 is provided further inside than the first cup 41, the interior of the second cup 42 is also the interior of the first cup 41. Therefore, in the following description, the space inside the first cup 41 and the space inside the second cup 42 will be collectively referred to as the "space surrounded by the first cup 41".

[0044] (Processing Room 50) The processing chamber 50 is a space into which substrates W are brought in and processed (hereinafter referred to as the "processing space"). The processing chamber 50 has a first side wall 51, a second side wall 52, a third side wall 53, a fourth side wall 54, a middle plate 55, and a top plate 56.

[0045] The first side wall 51, the second side wall 52, the third side wall 53, and the fourth side wall 54 are each substantially rectangular plate-like bodies, with their surfaces arranged parallel to the vertical direction. The vertical lengths of the third side wall 53 and the fourth side wall 54 are longer than the vertical lengths of the first side wall 51 and the second side wall 52.

[0046] The first side wall 51 and the second side wall 52 are positioned opposite each other, separated in the left-right direction in Figure 2. The third side wall 53 and the fourth side wall 54 are positioned opposite each other, separated in the up-down direction in Figure 2. One end of the first side wall 51 extending in the up-down direction is connected to the third side wall 53, and the other end of the first side wall 51 extending in the up-down direction is connected to the fourth side wall 54. Similarly, one end of the second side wall 52 extending in the up-down direction is connected to the third side wall 53, and the other end of the second side wall extending in the up-down direction is connected to the fourth side wall 54. As a result, the processing space is surrounded by the first side wall 51, the second side wall 52, the third side wall 53, and the fourth side wall 54.

[0047] A loading / unloading port 54a is formed in the fourth side wall 54, which is an opening for loading or unloading substrates W into or out of the substrate processing apparatus 1 (see Figure 2). A shutter (not shown) is provided in the loading / unloading port 54a, and the port 54a is made openable and closable by the shutter.

[0048] Here, as shown in Figure 2, the point where the end of the first side wall 51 and the end of the second side wall 52 are connected in the third side wall 53 is located inward from the end of the third side wall 53 in a plan view. Similarly, the point where the end of the first side wall 51 and the end of the second side wall 52 are connected in the fourth side wall 54 is located inward from the end of the fourth side wall 54.

[0049] Furthermore, as shown in Figure 4, the first side wall 51 is connected such that the position of its upper end is the same as the position of the upper ends of the third side wall 53 and the fourth side wall 54. Figure 4 is an axial cross-sectional view of the substrate processing apparatus 1 as seen from the position of line BB in Figure 1. Note that in Figure 4, the first cup 41 is in the upper position. The rotating holding unit 10, the second cup 42, the processing liquid supply unit 20 (oscillating mechanism 23), and the rinsing liquid supply unit 30 (oscillating mechanism 24) are omitted from the illustration. The second side wall 52 is also connected in the same way as the first side wall 51, such that the position of its upper end is the same as the position of the upper ends of the third side wall 53 and the fourth side wall 54.

[0050] Furthermore, the third side wall 53 and the fourth side wall 54 are also part of the exhaust section 70, which will be described later. More specifically, in the third side wall 53 and the fourth side wall 54, the portions outside the point where the first side wall 51 and the second side wall 52 are connected in a plan view (see Figures 1 and 2) are also part of the exhaust section 70, which will be described later. In addition, in the third side wall 53 and the fourth side wall 54, the portions below the lower ends of the first side wall 51 and the second side wall 52 (see Figure 4) are also part of the exhaust section 70, which will be described later. Furthermore, the first side wall 51 and the second side wall are also part of the exhaust section 70, which will be described later.

[0051] Returning to Figures 1 and 2, the intermediate plate 55 is a plate-like body provided to close the bottom of the space enclosed by the first side wall 51, the second side wall 52, the third side wall 53, and the fourth side wall 54. The intermediate plate 55 is connected to the lower ends of the first side wall 51 and the second side wall 52. A mounting hole 55a, which is a through hole with a shape corresponding to the outer shape of the first cup 41, is formed in the center of the intermediate plate 55. The first cup 41 is inserted inside the mounting hole 55a. Furthermore, in addition to the mounting hole 55a, a plurality of through holes 55b are formed in the intermediate plate 55. In this embodiment, as shown in Figure 2, 12 through holes 55b are formed around the mounting hole 55a. The through holes 55b are through holes for connecting the processing space with the exhaust section 70, which will be described later.

[0052] The top plate 56 is a plate-like body provided to cover the upper part of the space enclosed by the first side wall 51, the second side wall 52, the third side wall 53, and the fourth side wall 54. An opening 56a, which is a through hole, is formed in the center of the top plate 56. A gas supply unit 60 is provided on the upper part of the top plate 56. The gas supplied by the gas supply unit 60 is introduced into the processing chamber 50 through the opening 56a.

[0053] (Gas supply unit 60) The gas supply unit 60 supplies clean gas to the inside of the processing chamber 50. The gas supply unit 60 is, for example, a fan filter unit (FFU) that purifies the air inside the factory (cleanroom) where the substrate processing device 1 is installed and supplies it to the processing chamber 50. The FFU is equipped with a fan for taking in air from inside the factory and sending it into the processing chamber 50, and a filter (for example, a HEPA filter (High Efficiency Particulate Air Filter) or a ULPA filter (Ultra Low Penetration Air Filter)) for purifying the taken-in air. The air taken in by the fan is purified by passing through the filter. As the clean gas is supplied to the inside of the processing chamber 50 through the opening 56a by the gas supply unit 60, a downflow occurs inside the processing chamber 50.

[0054] (Exhaust section 70) The exhaust unit 70 exhausts the inside of the processing space. A duct connected to the exhaust unit 70 leads to an exhaust treatment facility (aerosol treatment facility) installed in the factory where the substrate processing device 1 is located. The gas discharged from the processing space by the exhaust unit 70 is sent through the duct to the exhaust treatment facility.

[0055] The exhaust section 70 includes a first exhaust passage 710, a second exhaust passage 720, and a connecting section 730. The first exhaust passage 710 is formed on the outside of the first side wall 51 (left side in Figures 1 and 2). The second exhaust passage 720 is formed on the outside of the second side wall 52 (right side in Figures 1 and 2).

[0056] A bottom plate 73 is provided below the middle plate 55, at a distance from the middle plate 55 and parallel to it. A through hole corresponding to the outer shape of the first liquid receiving section 43 is provided in the center of the bottom plate 73, and the bottom plate 73 is provided so as to be connected to the lower end of the first liquid receiving section 43 by the through hole. In addition, an outlet 73a is formed in the bottom plate 73 for discharging the cleaning liquid discharged from the removal section 80, which will be described later.

[0057] The space below the intermediate plate 55 and outside the recovery section 40 functions as a communication section 730. The communication section 730 connects the processing space with the first exhaust passage 710 and the second exhaust passage 720.

[0058] A portion of the gas (downflow) supplied to the processing space by the gas supply unit 60 flows toward the upper surface of the substrate W held by the holding unit 12 and into the space surrounded by the first cup 41. The space surrounded by the first cup 41 is in communication with the communication unit 730 by the gas flow path 47 described above. As a result, the gas that flows into the space surrounded by the first cup 41 can flow to the communication unit 730 through the gas flow path 47. In addition, a portion of the gas introduced into the processing space by the gas supply unit 60 flows outward from the first cup 41. The gas that flows outward from the first cup 41 can flow to the communication unit 730 through the through hole 55b formed in the middle plate 55. In this way, the processing space and the communication unit 730 are in communication with the gas flow path 47 or the through hole 55b, allowing gas to pass through.

[0059] Outside the first side wall 51, a first outer wall 71 is provided, spaced apart from and parallel to the first side wall 51. The first outer wall 71 is a roughly rectangular plate-like body. The upper end of the first outer wall 71 is connected to the end of the top plate 56, and the lower end is connected to the end of the bottom plate 73. In addition, one end of the first side wall 71 that extends vertically is connected to the end of the third side wall 53, and the other end of the first side wall 71 that extends vertically is connected to the end of the fourth side wall 54.

[0060] A first exhaust port 71a, which is a through-hole, is formed in the first outer wall 71. The first exhaust port 71a connects the first exhaust passage 710 to the outside of the substrate processing apparatus 1. In this embodiment, the first exhaust port 71a is located above the center of the first outer wall 71 in the vertical direction and is formed in the center of the first outer wall 71 in a plan view. A duct connected to an exhaust treatment facility is connected to this first exhaust port 71a.

[0061] With this configuration, the space enclosed by the first side wall 51, the first outer wall 71, the third side wall 53, and the fourth side wall 54 functions as the first exhaust passage 710. The first exhaust passage 710 is a path for discharging gas discharged from the processing space to the outside of the substrate processing apparatus 1. The first exhaust passage 710 communicates with the communication section 730 at its lower part. Gas discharged from inside the processing space flows into the first exhaust passage 710 via the communication section 730, and the incoming gas is discharged from the first exhaust port 71a. In other words, in the first exhaust passage 710, the exhaust gas flowing from the processing space moves from bottom to top. In the first exhaust passage 710, a cover 74 is attached above the position of the first exhaust port 71a to prevent gas from accumulating above the position where the first exhaust port 71a is formed.

[0062] Outside the second side wall 52, a second outer wall 72 is provided, spaced apart from the second side wall 52 and parallel to it. The second outer wall 72 is a roughly rectangular plate-like body. The upper end of the second outer wall 72 is connected to the end of the top plate 56, and the lower end is connected to the end of the bottom plate 73. In addition, one end of the second outer wall 72 that extends vertically is connected to the end of the third side wall 53, and the other end of the second outer wall 72 that extends vertically is connected to the end of the fourth side wall 54. In other words, the external shape of the substrate processing apparatus 1 in plan view is composed of the first outer wall 71, the second outer wall 72, the third side wall 53, and the fourth side wall 54.

[0063] A second exhaust port 72a, which is a through-hole, is formed in the second outer wall 72. The second exhaust port 72a connects the second exhaust passage 720 to the outside of the substrate processing apparatus 1. In this embodiment, the second exhaust port 72a is located above the center of the second outer wall 72 in the vertical direction and is formed in the center of the second outer wall 72 in a plan view. A duct connected to an exhaust treatment facility is connected to this second exhaust port 72a.

[0064] With this configuration, the space enclosed by the second side wall 52, the second outer wall 72, the third side wall 53, and the fourth side wall 54 functions as the second exhaust passage 720. The second exhaust passage 720 is a path for discharging gas discharged from the processing space to the outside of the substrate processing apparatus 1. The second exhaust passage 720 communicates with the communication section 730 at its lower part. Gas discharged from inside the processing space flows into the second exhaust passage 720 via the communication section 730, and the incoming gas is discharged from the second exhaust port 72a. In other words, in the second exhaust passage 720, the exhaust gas flowing inside from the processing space flows from bottom to top. In addition, a cover 75 is attached above the position of the second exhaust port 72a in the second exhaust passage 720 to prevent gas from accumulating above the position where the second exhaust port 72a is formed.

[0065] (Removal section 80) The removal unit 80 supplies a mist-like cleaning solution to the first exhaust passage 710 and the second exhaust passage 720. The removal unit 80 has a first nozzle 81 and a second nozzle 82.

[0066] The first nozzle 81 is a nozzle that discharges a mist-like cleaning liquid into the first exhaust passage 710. The first nozzle 81 is located inside the first exhaust passage 710, below the first exhaust port 71a, and is positioned so that its discharge direction is downward.

[0067] In this embodiment, as shown in Figure 2, the first nozzle 81 is positioned so that, in a plan view, its position in the direction in which the first outer wall 71 extends (vertical direction in Figure 2) is centered inside the first exhaust passage 710. That is, in a plan view, in the direction in which the first outer wall 71 extends, the center of the first exhaust port 71a and the center of the first nozzle 81 are located at the same position. Furthermore, in a plan view, in a direction perpendicular to the direction in which the first outer wall 71 extends (left-right direction in Figure 2), the first nozzle 81 is positioned such that the distance between the first outer wall 71 and the first nozzle 81 is shorter than the distance between the first side wall 51 and the first nozzle 81. In this way, the first nozzle 81 is located near the first exhaust port 71a. Furthermore, the position of the first nozzle 81 in the vertical direction is preferably below the first exhaust port 71a and above the center within the first exhaust passage 710 (the space from the connection part with the communication part 730 to the cover 74).

[0068] The first nozzle 81 is connected to a cleaning fluid supply source (not shown) and discharges cleaning fluid supplied from the cleaning fluid supply source. In this embodiment, the first nozzle 81 is connected to piping extending from a pure water production device installed in the factory where the substrate processing apparatus 1 is installed, and discharges pure water as the cleaning fluid. The cleaning fluid discharged from the first nozzle 81 is in the form of a mist and diffuses in a conical shape, as shown in Figure 5. That is, the first nozzle 81 is a so-called full-cone type spray nozzle. When cleaning fluid is discharged from the first nozzle 81, the mist-like cleaning fluid is supplied to the area below the first exhaust port 71a in the first exhaust passage 710. The temperature of the cleaning fluid discharged from the first nozzle 82 is, for example, room temperature.

[0069] Figure 5 is a diagram illustrating the appearance of the mist-like cleaning liquid supplied to the exhaust passage. In Figure 5, the region M to which the mist-like cleaning liquid is supplied is indicated by a dotted line. As shown in Figure 5, the spray pattern of the cleaning liquid discharged from the first nozzle 81 is arranged to be in contact with at least a part of the first side wall 51 and a part of the first outer wall 71.

[0070] The second nozzle 82 is a nozzle that discharges a mist-like cleaning solution into the second exhaust passage 720. The second nozzle 82 is located inside the second exhaust passage 720, below the second exhaust port 72a, and is positioned so that its discharge direction is downward.

[0071] In this embodiment, as shown in Figure 2, the second nozzle 82 is positioned so that, in a plan view, its position in the direction in which the second outer wall 72 extends (vertical direction in Figure 2) is centered inside the second exhaust passage 720. That is, in a plan view, in the direction in which the second outer wall 72 extends, the center of the second exhaust port 72a and the center of the second nozzle 82 are located at the same position. Furthermore, in a plan view, in a direction perpendicular to the direction in which the second outer wall 72 extends (left-right direction in Figure 2), the second nozzle 82 is positioned such that the distance between the second outer wall 72 and the second nozzle 82 is shorter than the distance between the second side wall 52 and the second nozzle 82. In this way, the second nozzle 82 is located near the second exhaust port 72a. Furthermore, the position of the second nozzle 82 in the vertical direction is preferably below the second exhaust port 72a and above the center within the second exhaust passage 720 (the space from the connection part with the communication part 730 to the cover 75).

[0072] The second nozzle 82 is connected to a cleaning fluid supply source (not shown) and discharges cleaning fluid supplied from the cleaning fluid supply source. In this embodiment, the second nozzle 82 is connected to piping extending from a pure water production device provided in the factory where the substrate processing apparatus 1 is installed and discharges pure water as the cleaning fluid. The cleaning fluid discharged from the second nozzle 82 is in the form of a mist and diffuses in a conical shape. That is, the second nozzle 82 is a so-called full-cone type spray nozzle. The second nozzle 82 can be, for example, a nozzle similar to the first nozzle 81. When cleaning fluid is discharged from the second nozzle 82, the mist-like cleaning fluid is supplied to the area below the second exhaust port 72a in the second exhaust passage 720. The temperature of the cleaning fluid discharged from the second nozzle 82 is, for example, room temperature.

[0073] As shown in Figure 5, the spray pattern of the cleaning liquid discharged from the second nozzle 82 is arranged to be in contact with at least a portion of the second side wall 52 and a portion of the second outer wall 72.

[0074] (Control device 90) The control device 90 controls the operation of the substrate processing apparatus 1. The control device 90 has a processor that executes a program for processing the substrate W, a memory that stores various information such as the program and operating conditions, and a drive circuit that drives each part. In other words, the control device 90 controls the rotation holding unit 10, the processing liquid supply unit 20, the rinsing liquid supply unit 30, the recovery unit 40, the gas supply unit 60, the removal unit 80, and so on.

[0075] [Operation of the substrate processing device 1] The substrate processing performed by the substrate processing apparatus 1 according to this embodiment will be explained using Figure 6 in addition to Figures 1 to 5 above. Figure 6 is a flowchart showing the operation of the substrate processing apparatus 1. Before the start of operation of the substrate processing apparatus 1, the holding unit 12 is in the open position, and the first cup 41 and the second cup 42 are in the lower position. Also, the nozzle 21 of the processing liquid supply unit 20 and the nozzle 31 of the rinsing liquid supply unit 30 are in the retracted position.

[0076] First, when the substrate processing apparatus 1 is started, the control device 90 controls the gas supply unit 60 to supply clean gas into the processing chamber 50 (step S01). As gas is supplied into the processing chamber 50, the inside of the processing chamber 50 is exhausted as if being pushed out. As described above, the gas supplied to the processing space flows through the gas flow path 47 or the through hole 55b formed in the intermediate plate 55 and into the communication section 730. From the communication section 730, it flows into the first gas flow path 710 or the second gas flow path 720 and is discharged outside the substrate processing apparatus 1 from the first outlet 71a or the second outlet 72a.

[0077] Next, the control device 90 controls the removal unit 80 to start discharging mist-like cleaning liquid from the first nozzle 81 and the second nozzle 82 (step S02). When cleaning liquid is discharged from the first nozzle 81, mist is present in the area below the first exhaust port 71a in the exhaust passage 710, and when cleaning liquid is discharged from the second nozzle 82, mist is present in the area below the second exhaust port 72a in the exhaust passage 720. The supplied mist-like processing liquid falls downward due to the force of the discharge and gravity, and is discharged as liquid outside the substrate processing apparatus 1 through the discharge port 73a formed in the bottom plate 73.

[0078] Next, the substrate W to be processed is brought into the processing chamber 50 from the loading / unloading entrance 54a (step S03). The brought-in substrate W is held in place when the holding unit 12 moves to the holding position.

[0079] When the substrate W is held, the control device 90 controls the first lifting mechanism 45 to move the first cup 41 to the upper position and the second lifting mechanism 46 to move the second cup 42 to the upper position (step S04).

[0080] When the first cup 41 and the second cup 42 move to the upper position, the control device 90 controls the rotary drive unit 13 to start the rotation of the rotary table 11. As the rotary table 11 rotates, the substrate W held in the holding unit 12 rotates (step S05).

[0081] Next, the control device 90 controls the processing liquid supply unit 20 to start supplying processing liquid to the substrate W held in the holding unit 12 (step S06). The processing liquid supply unit 20, under the control of the control device 90, operates the oscillating mechanism 23 to oscillate the oscillating arm 22, thereby moving the nozzle 21 to a discharge position facing the center of the substrate W. Then, the processing liquid (SPM) is discharged from the nozzle 21 toward the center of the substrate W. The processing liquid supplied to the substrate W spreads toward the outer edge of the substrate W due to the rotation of the substrate W, so that the entire upper surface of the substrate W is processed. The processing liquid that reaches the outer edge of the substrate W splashes from the substrate W and is received by the inner wall of the second cup 42. The processing liquid received by the inner wall of the second cup 42 flows down into the second liquid receiving unit 44 and is discharged outside the substrate processing device 1 from the discharge port 440.

[0082] At this time, when SPM is discharged from the nozzle 21, fumes are generated inside the processing chamber 50. The fine particles contained in the generated fumes flow through the communication section 730 to the first exhaust passage 710 or the second exhaust passage 720 along with the gas (downflow) supplied from the gas supply section 60. Since a mist-like cleaning liquid is supplied inside the first exhaust passage 710 and the second exhaust passage 720, the suspended fine particles are captured by the mist-like cleaning liquid. Then, while contained in the cleaning liquid, they are discharged from the outlet 73a. This prevents the fine particles generated by the processing liquid from being included in the exhaust gas discharged outside the substrate processing apparatus 1 from the first exhaust port 71a and the second exhaust port 72a.

[0083] Returning to the explanation of Figure 6, after a predetermined time has elapsed since the start of supplying the processing liquid to the substrate W (step S07: YES), the control device 90 controls the processing liquid supply unit 20 to stop supplying the processing liquid to the substrate W (step S08). The processing liquid supply unit 20, under the control of the control device 90, stops discharging the processing liquid from the nozzle 21 and then moves the nozzle 21 to the retracted position.

[0084] Next, the control device 90 moves the second cup 42 to the lower position using the second lifting mechanism 46 while keeping the first cup 41 in the upper position (step S09). With the first cup 41 in the upper position and the second cup 42 in the lower position, the rinsing liquid that is then supplied to the substrate W will be scattered from the substrate W and then received by the first cup 41.

[0085] When the second cup 42 moves to the lower position, the control device 90 controls the rinse liquid supply unit 30 to start supplying rinse liquid to the substrate W held in the holding unit 12 (step S10). The rinse liquid supply unit 30, under the control of the control device 90, operates the oscillating mechanism 33 to oscillate the oscillating arm 32, thereby moving the nozzle 31 to a discharge position facing the center of the substrate W. The rinse liquid is then discharged from the nozzle 31 toward the center of the substrate W. As the substrate W rotates, the rinse liquid supplied to the substrate W spreads toward the outer edge of the substrate W, replacing the processing liquid on the substrate W with the rinse liquid, and the entire upper surface of the substrate W is rinsed. The processing liquid that reaches the outer edge of the substrate W splashes from the substrate W and is received by the inner wall of the first cup 41. The processing liquid received by the inner wall of the first cup 41 flows down into the first liquid receiving unit 43 and is discharged outside the substrate processing device 1 from the discharge port 430.

[0086] After a predetermined time has elapsed since the start of supplying the rinsing liquid to the substrate W (step S11: YES), the control device 90 controls the rinsing liquid supply unit 30 to stop supplying the rinsing liquid to the substrate W (step S12). The rinsing liquid supply unit 30, under the control of the control device 90, stops discharging the rinsing liquid from the nozzle 31 and then moves the nozzle 31 to the retracted position.

[0087] Once the rinsing process for the substrate W is complete, the control device 90 controls the rotary drive unit 13 to stop the rotation of the rotary table 11. This stops the rotation of the substrate held in the holding unit 12 (step S13). Then, the first cup 41 is moved to the lower position (step S14). Finally, the substrate W is discharged from the discharge port 54a (step S15).

[0088] The control device 90 determines whether there is a substrate W to be processed next (step S16). If there is a substrate W to be processed next (step S16: YES), the process returns to step S03 and steps S03 to S15 are repeated.

[0089] On the other hand, if there is no substrate W to be processed next (step S16: NO), the control device 90 controls the removal unit 80 to stop the discharge of mist-like cleaning liquid from the first nozzle 81 and the second nozzle 82 (step S17). Then, the control device 90 controls the gas supply unit 60 to stop the supply of clean gas into the processing chamber 50 (step S18), and the operation of the substrate processing apparatus 1 ends.

[0090] As described above, the substrate processing apparatus 1 according to this embodiment comprises a processing chamber 50 that constitutes a space for processing the substrate W, a rotating holding unit 10 that holds and rotates the substrate W, a processing liquid supply unit 20 that supplies processing liquid to the substrate W held by the rotating holding unit 10, an exhaust unit 70 having exhaust passages (first exhaust passage 710, second exhaust passage 720) for discharging gas discharged from inside the processing chamber 50 to the outside, and a removal unit 80 arranged inside the exhaust passages (first exhaust passage 710, second exhaust passage 720) and having nozzles (first nozzle 81, second nozzle 82) that discharge a mist-like cleaning liquid.

[0091] According to the substrate processing apparatus 1 of this embodiment, suspended particulate matter generated by the supply of processing liquid from the processing liquid supply unit 20 is captured inside the first exhaust passage 710 and the second exhaust passage 720 by the mist-like cleaning liquid discharged from the first nozzle 81 and the second nozzle 82 of the removal unit 80. Therefore, it is possible to suppress the inclusion of particulate matter in the exhaust gas discharged outside the substrate processing apparatus 1 from the first exhaust port 71a and the second exhaust port 72a. As a result, for example, in the exhaust gas treatment equipment into which the exhaust gas discharged from the substrate processing apparatus 1 flows, the energy required to detoxify the exhaust gas can be reduced, the load on the exhaust gas treatment equipment can be reduced, and the frequency of maintenance of the exhaust gas treatment equipment can be reduced.

[0092] Furthermore, the exhaust section 70 includes a first exhaust port 71a (second exhaust port 72a) that connects the first exhaust passage 710 (second exhaust passage 720) to the outside, and the first nozzle 81 (second nozzle 82) is provided below the first exhaust port 71a (second exhaust port 72a).

[0093] The mist-like cleaning liquid discharged from the first nozzle 81 (second nozzle 82) moves downward due to gravity. Therefore, by positioning the first nozzle 81 (second nozzle 82) below the first exhaust port 71a (second exhaust port 72a), it is possible to prevent the cleaning liquid supplied to the exhaust passage from being discharged along with the exhaust from the first exhaust port 71a (second exhaust port 72a).

[0094] Furthermore, the first exhaust passage 710 (second exhaust passage 720) has a section in which the gas flow passing through the inside of the first exhaust passage 710 (second exhaust passage 720) is directed from bottom to top, and the first nozzle 81 (second nozzle 82) is positioned in this section.

[0095] As a result, the direction of gas flow and the direction of gravity acting on the cleaning liquid discharged from the first nozzle 81 (second nozzle 82) are opposite. The cleaning liquid discharged from the first nozzle 81 (second nozzle 82) falls downward due to gravity and comes into contact with the gas containing fine particles generated by the supply of the processing liquid, so that it can capture suspended fine particles, thus efficiently capturing fine particles.

[0096] Furthermore, the first nozzle 81 (second nozzle 82) is positioned so that its discharge direction faces downward, and it discharges the cleaning liquid in a conical diffusion manner.

[0097] This makes it easier for the cleaning fluid discharged from the first nozzle 81 (second nozzle 82) to be supplied to the inner wall constituting the first exhaust passage 710 (second exhaust passage 720). In the embodiment described above, the spray pattern of the cleaning fluid discharged from the first nozzle 81 is provided so as to be in contact with at least a part of the first side wall 51 and a part of the first outer wall 71, and the spray pattern of the cleaning fluid discharged from the second nozzle 82 is provided so as to be in contact with at least a part of the second side wall 52 and a part of the second outer wall 72.

[0098] In processing liquids that generate fumes, fumes may come into contact with the inner wall of the exhaust passage, causing fine particles to adhere to it. When fine particles contained in the fumes adhere to and accumulate on the inner wall of the exhaust passage, the exhaust efficiency is impaired. According to this embodiment, cleaning liquid is more easily supplied to the inner wall of the exhaust passage, so the inner wall of the exhaust passage remains wet, making it difficult for fine particles to accumulate. Furthermore, even if fine particles adhere to the inner wall of the exhaust passage, they are washed away by the cleaning liquid discharged from the first nozzle 81 (second nozzle 82). Therefore, a decrease in exhaust efficiency can be prevented.

[0099] [Differentiation] The above describes one embodiment of the present invention, but it is not limited to this embodiment, and various modifications are possible.

[0100] (1) The processing liquid supplied by the processing liquid supply unit 20 is not limited to SPM. The processing liquid supplied by the processing liquid supply unit 20 to the substrate W may be, for example, hydrofluoric acid (HF), dilute hydrofluoric acid (DHF), buffered hydrofluoric acid (BHF), or a mixture of hydrofluoric acid and nitric acid (HNO3). The substrate processing apparatus 1 of this embodiment is suitable when processing the substrate W using a processing liquid that generates fumes when supplied to the substrate W.

[0101] (2) In the embodiments described above, an example was described in which the first side wall 51, the second side wall 52, the third side wall 53, and the fourth side wall 54 constituting the processing chamber 50 are part of the first exhaust passage 710 and the second exhaust passage 720, but the invention is not limited to this. The first exhaust passage 710 and the second exhaust passage 720 may be composed of independent piping. Also, the number of exhaust passages may be one or three or more.

[0102] (3) In the above-described embodiment, the supply of mist-like cleaning liquid to the exhaust passages (first exhaust passage 710, second exhaust passage 720) was described to start before the substrate W was brought in and continue until the substrate W to be processed was no longer present (step S16:NO). However, the timing of starting and stopping the supply of cleaning liquid is not limited to this. The control device 90 only needs to control the removal unit 80 (first nozzle 81, second nozzle 82) to discharge cleaning liquid at least while the processing liquid is being supplied from the processing liquid supply unit 20 to the substrate W (between step S06 and step S08). A large amount of fume is generated while the processing liquid is being discharged from the nozzle 21 of the processing liquid supply unit 20, so by discharging mist-like cleaning liquid into the exhaust passage at least during that time, it is possible to suppress the inclusion of fine particles in the gas discharged outside the substrate processing apparatus 1.

[0103] However, it takes a certain amount of time for the gas containing fumes generated in the processing space to reach the exhaust passage. Also, even after the supply of processing liquid from the processing liquid supply unit 20 is stopped, new fumes may be generated from the processing liquid adhering to the recovery unit 40. Therefore, it is preferable to stop the discharge of the cleaning liquid from the removal unit 70 after a certain amount of time has elapsed since the supply of processing liquid from the processing liquid supply unit 20 was stopped.

[0104] (4) In the embodiments described above, the temperature of the cleaning liquid discharged from the first nozzle and the second nozzle 82 was assumed to be room temperature, but this is not limited to this. For example, a heater for heating the cleaning liquid flowing through the piping may be provided in the middle of the piping connected to the first nozzle 81 and the second nozzle, and a high-temperature mist-like cleaning liquid may be supplied inside the first exhaust passage 710 and the second exhaust passage 720.

[0105] By heating the cleaning fluid supplied to the inside of the first exhaust passage 710 and the second exhaust passage 720 to a high temperature, the cleaning performance is improved, as the cleaning fluid washes away fine particles adhering to the inner walls of the first exhaust passage 710 and the inner walls of the second exhaust passage 720.

[0106] (5) The removal unit 80 may further include a flow rate adjustment unit that changes the flow rate of the cleaning liquid discharged from the first nozzle 81 and the second nozzle 82. The flow rate adjustment unit may be, for example, an air-operated valve provided in the middle of the path connected to the first nozzle 81 and the second nozzle 82 and controlled by the control device 90. The control device 90 may control the flow rate adjustment unit so that the flow rate of the cleaning liquid discharged from the first nozzle 81 and the second nozzle 82 is greater when the processing liquid supply unit 20 is supplying processing liquid to the substrate W than when the processing liquid supply unit 20 is not supplying processing liquid to the substrate W.

[0107] As described above, a large amount of fumes are generated while the processing liquid is being discharged from the nozzle 21 of the processing liquid supply unit 20. Therefore, by increasing the amount of cleaning liquid supplied to the exhaust passage when the processing liquid supply unit 20 is supplying the processing liquid, it becomes easier to capture airborne fine particles.

[0108] (6) The substrate processing apparatus 1 may include a heating unit that heats the substrate W to which the processing liquid is supplied, or the processing liquid on the substrate W. Figure 7 shows an example of a substrate processing apparatus 100 equipped with a heating unit 200. In plan view, the heating unit 200 has a circular outer shape that is the same as or larger than the substrate W. The heating unit 200 is equipped with a heater that generates heat when energized, and its drive is controlled by the control device 90.

[0109] A through-hole is formed in the center of the heating unit 200 through which the nozzle 21 of the processing liquid supply unit 20 is inserted. The heating unit 200 is supported by an arm 220 and is mounted above the rotary table 11 so as to be able to move up and down. The heating unit 200 is connected to one end of the arm 220, and the other end is connected to a lifting drive unit 230. The lifting drive unit 230 is a drive source that raises and lowers the heating unit 200 by raising and lowering the arm 220. The nozzle 21 moves up and down together with the heating unit 200.

[0110] In Figure 7, the heating unit 200 located at a distance above the substrate W held by the holding unit 12 is shown by a solid line, while the heating unit 200 located at a proximity to the substrate W is shown by a dashed line. When the processing liquid is discharged from the nozzle 21 of the processing liquid supply unit 20, the heating unit 200 is positioned at the proximity location. Then, while supplying the processing liquid to the substrate W, the substrate W or the processing liquid on the substrate W is heated. By heating the substrate W or the processing liquid on the substrate W, the processing rate by the processing liquid is increased, and the processing efficiency of the substrate W can be improved.

[0111] Although several embodiments of the present invention have been described above, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0112] 1. Substrate processing apparatus 10 Rotating holding part 20 Processing liquid supply unit 21 nozzles 30 Rinse liquid supply unit 40. Recovery Section 41 The First Cup 42 The Second Cup 43 First liquid receiving section 44 Second liquid receiving section 50 Processing Rooms 60 Gas supply unit 70 Exhaust section 80 Removal part 81 First nozzle 82 Second nozzle 90 Control Unit 710 First exhaust passage 720 Second exhaust passage 730 Communication section 200 Heating section W board

Claims

1. A processing chamber that constitutes the space for processing substrates, A rotating holding unit that holds and rotates the substrate, A processing liquid supply unit that supplies processing liquid to the substrate held by the rotating holding unit, An exhaust section having an exhaust passage for discharging gas discharged from inside the processing chamber to the outside, A removal unit is located inside the exhaust passage and has a nozzle that discharges a mist-like cleaning liquid, A substrate processing apparatus equipped with the following:

2. The processing liquid supplied to the substrate by the processing liquid supply unit is a mixture of sulfuric acid solution and hydrogen peroxide aqueous solution. The substrate processing apparatus according to claim 1,

3. The system further comprises a control device for controlling the processing liquid supply unit and the removal unit. The control device controls the discharge of the cleaning liquid from the nozzle at least while the processing liquid is being supplied to the substrate by the processing liquid supply unit. A substrate processing apparatus according to claim 1 or claim 2.

4. The exhaust passage has a section in which the flow of gas passing through the inside of the exhaust passage is directed from bottom to top. The nozzle is positioned in the section, A substrate processing apparatus according to claim 1 or claim 2.

5. The exhaust section is provided with an exhaust port that connects the exhaust passage to the outside. The nozzle is provided below the exhaust port. A substrate processing apparatus according to claim 1 or claim 2.

6. The nozzle is provided so that the discharge direction faces downward and discharges the cleaning liquid in a conical diffusion manner. The substrate processing apparatus according to claim 5.

7. The exhaust section is provided with an exhaust port that connects the exhaust passage to the outside. The exhaust passage has a section in which the flow of gas passing through the inside of the exhaust passage is directed from bottom to top. The nozzle is located in the section below the exhaust port. A substrate processing apparatus according to claim 1 or claim 2.

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