Substrate processing apparatus, article manufacturing method

Abstract

This technology was expected to be advantageous in terms of product quality and manufacturing yield because it allows for uniform drying of the surface of a substrate to which the solution has been applied. [Solution] A substrate processing apparatus comprising a container, a depressurization mechanism, a substrate holding part for holding a substrate having a film, and a cover unit surrounding the upper part of the substrate, wherein the inside of the container is defined as a space surrounded by the cover unit and the substrate, and a third space outside the cover unit, the space surrounded by the cover unit and the substrate comprises a first space which is the space above the first region on which the film is formed, and a second space which is the space above the second region, the first space is surrounded by the first region, a first side wall and a first top plate, the first top plate has an opening that connects the first space and the third space, the second space is surrounded by the second region, a first side wall and a second top plate, the first space and the second space are in communication through a gap between the first side wall and the substrate, and a gas supply mechanism for supplying gas to the second space.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus for drying a substrate to which a liquid is applied, and the like.

Background Art

[0002] As a method for manufacturing an article such as an organic EL panel provided with an OLED (Organic Light Emitting Diode), a method of applying a solution onto a substrate using a liquid coating apparatus to dispose a solution film and drying the solution film to form a solid film is known. The solution film is a film composed of a solution (ink) containing a solute and a solvent, and a vacuum drying apparatus can be used for drying the solution film. In order to form a solid film with stable characteristics on the substrate with high uniformity, it is important to appropriately perform the drying process of the substrate after applying the solution.

[0003] Patent Document 1 describes a method of applying a solution (ink) to each of a plurality of regions on a substrate according to an individual pattern and then drying the entire substrate using a vacuum drying apparatus. In Patent Document 1, in order to suppress the occurrence of uneven drying between the plurality of regions in which individual patterns are formed, the upper space above each individual pattern is partitioned by a partitioning member and then depressurized to make the vapor flow in the vicinity of each individual pattern uniform. In order to reliably partition and separate the upper space above each individual pattern after applying the solution (ink), a configuration in which a partitioning member is adhered to the substrate is used.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] As described in Patent Document 1, in a configuration in which the partition member is in close contact with the substrate, the partition member may come into direct contact with the area where the functional components (organic EL elements, wiring, electrodes, transistors, optical films, etc.) are formed, potentially damaging the functional components. Furthermore, even if the partition member does not directly contact the area where the functional components are formed, if it comes into contact with the vicinity and compresses the substrate, stress may be applied to the area where the functional components are formed, potentially causing abnormalities in the properties of the functional components. In addition, foreign matter adhering to the partition member may be transferred when the partition member comes into contact with the substrate, potentially contaminating the substrate. Thus, in a method in which the partition member is in close contact with the area where the functional components are formed and the drying process is carried out, there are concerns that the quality of the product may deteriorate or the manufacturing yield may decrease.

[0006] Therefore, there was a need for a technology that could uniformly dry the surface of a substrate to which the solution had been applied, thereby offering advantages in terms of product quality and manufacturing yield. [Means for solving the problem]

[0007] A first aspect of the present invention comprises a container, a depressurization mechanism capable of reducing the pressure inside the container, a substrate holding portion disposed inside the container for holding a substrate having a film, and a cover unit disposed inside the container for surrounding the upper part of the substrate held by the substrate holding portion, wherein the inside of the container is defined as a space surrounded by the cover unit and the substrate, and a third space outside the cover unit, and the substrate comprises a first region on which the film is formed, and a second region surrounding the periphery of the first region, and the space surrounded by the cover unit and the substrate comprises a first space which is the space above the first region, and a second space which is the space above the second region A substrate processing apparatus comprising a cover unit comprising a first side wall, a second side wall, a first top plate, and a second top plate, wherein the first space is surrounded by the first region, the first side wall, and the first top plate, the first top plate has an opening that connects the first space and the third space, the second space is surrounded by the second region, the first side wall, the second side wall, and the second top plate, the first space and the second space are in communication through the gap between the first side wall and the substrate, and the apparatus comprises a gas supply mechanism that supplies gas to the second space for at least a portion of the period during which the depressurization mechanism depressurizes the inside of the container. [Effects of the Invention]

[0008] According to the present invention, it is possible to uniformly dry the surface of a substrate to which a solution has been applied, and this technology offers advantages in terms of product quality and manufacturing yield. [Brief explanation of the drawing]

[0009] [Figure 1] A schematic cross-sectional view showing the internal structure of an example of a substrate processing apparatus according to the embodiment. [Figure 2] A schematic diagram illustrating the operation of a transport mechanism. [Figure 3] A schematic diagram illustrating the behavior of solvent vapor in the case where the first space SP1 is directly connected to the third space SP3 via a gap G1. [Figure 4]A schematic diagram showing a portion of the left side inside container 10 to illustrate the behavior of solvent vapor in the embodiment. [Figure 5] A schematic diagram illustrating the configuration of the gas supply mechanism (GU). [Figure 6] A schematic diagram illustrating the configuration of a gas supply mechanism capable of supplying multiple types of solvent vapors. [Figure 7] A flowchart illustrating the drying process. [Figure 8] A graph illustrating how to control the pressure inside container 10. [Figure 9] A graph illustrating how pressure was controlled during the periods before and after period D2. [Figure 10] (a) A diagram illustrating an example of a structure that realizes a magnitude relationship of conductances. (b) A diagram illustrating another example of a structure that realizes a magnitude relationship of conductances. [Figure 11] A diagram illustrating yet another example of a structure that realizes the relationship between the magnitudes of conductance. [Figure 12] A diagram illustrating the surface treatment of the components defining the second space SP2. [Figure 13] A schematic diagram illustrating an example of a cover unit of a vacuum drying apparatus according to Embodiment 2. [Figure 14] A schematic diagram illustrating another example of the cover unit of the vacuum drying apparatus according to Embodiment 2. [Modes for carrying out the invention]

[0010] With reference to the drawings, a substrate processing apparatus, a substrate processing method, and the like according to an embodiment of the present invention will be described. The embodiments shown below are illustrative, and for example, those skilled in the art can modify the detailed configuration as appropriate without departing from the spirit of the present invention.

[0011] In the following description of the embodiments, in the drawings referred to, unless otherwise specified, elements denoted with the same reference numerals have the same functions. In the drawings, when there are a plurality of identical elements, the assignment of reference numerals and their description may be omitted.

[0012] In addition, for the convenience of illustration and description, the drawings may be represented schematically. Therefore, the shape, size, arrangement, etc. of the elements shown in the drawings may not necessarily exactly match the actual objects. Also, the description of "XX or more and YY or less" or "XX to YY" representing a numerical range means a numerical range including the endpoints XX (lower limit) and YY (upper limit) unless otherwise specified. When a numerical range is described stepwise, the upper and lower limits of each numerical range can be arbitrarily combined.

[0013] In the drawings described below, the direction may be indicated by the XYZ coordinate system. In the XYZ coordinate system, the in-plane direction along the XY plane is the horizontal direction, and the negative direction of the Z axis may be the vertical direction (gravity direction). Also, in the following description, for example, when referring to the +X direction, it refers to the same direction as that indicated by the X-axis arrow in the illustrated orthogonal coordinate system, and when referring to the -X direction, it refers to the direction opposite by 180 degrees to the direction indicated by the X-axis arrow in the illustrated orthogonal coordinate system. Also, when simply referring to the X direction, it refers to a direction parallel to the X axis regardless of the difference from the direction indicated by the X-axis arrow in the illustration. The same applies to directions other than X.

[0014] [Embodiment 1] (Overall Configuration of Substrate Processing Apparatus) FIG. 1 is a schematic cross-sectional view showing the internal structure of a vacuum drying apparatus DU, which is an example of a substrate processing apparatus according to an embodiment. The vacuum drying apparatus DU is used, for example, when manufacturing an organic EL panel provided with a large number of organic EL elements. Specifically, it is used in the step of drying a substrate S on which a solution film F made of a functional ink is disposed on a main surface MS to form a solid film. The vacuum drying apparatus DU includes a container 10 as a chamber, a vacuum mechanism 30 capable of evacuating the inside of the container 10, and a control unit 90.

[0015] The control unit 90 is a computer for controlling the operations of each part of the vacuum drying device DU. Inside the control unit 90, there are provided a CPU, a ROM, a RAM, an I / O port, etc. not shown in the figure. The ROM stores an operation program of the vacuum drying device DU (substrate processing device).

[0016] The program for executing various processes according to the substrate processing method of the present embodiment may be stored in the ROM in the same manner as other operation programs, or may be loaded into the RAM from the outside via a network. Alternatively, it may be loaded into the RAM via a computer-readable recording medium on which the program is recorded. The program may be recorded on any recording medium as long as it is a computer-readable recording medium. For example, as the recording medium for supplying the program, a ROM, a disk, an external storage device, etc. may be used.

[0017] Taking a specific example for explanation, as the recording medium, a flexible disk, an optical disk, a magneto-optical disk, a magnetic tape, a USB memory, an SSD, etc. can be used.

[0018] The I / O port is connected to an external device or a network, and can perform input / output of data necessary for, for example, performing a drying process on a substrate, between it and an external computer. Further, the I / O port is connected to a monitor and an input device not shown in the figure, and can display the operation state information of the vacuum drying device DU to the operator and receive commands from the operator.

[0019] In addition to the above-described configuration, the control unit 90 may be constituted by, for example, a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), a general-purpose or dedicated computer in which a program is incorporated, or a combination of all or part of these.

[0020] The pressure reduction mechanism 30 may include, for example, at least one of a dry pump, diaphragm vacuum pump, turbomolecular pump, cryopump, sorption pump, oil diffusion pump, mechanical booster pump, ejector pump, or oil rotary vacuum pump. The pressure reduction mechanism 30 may also include piping connecting the aforementioned pumps to the container 10, and a control valve for controlling the exhaust speed.

[0021] The container 10, which serves as a chamber, can be an airtight container. A gate valve 12 that can be opened and closed is provided on the side of the container 10. Opening the gate valve 12 opens an inlet for loading the substrate S into or out of the container 10. Closing the gate valve 12 closes the inlet and outlet for the substrate S, and the inside of the container 10 is isolated from the outside air.

[0022] The container 10 is provided with a substrate holding section 20, which serves as a stage on which the delivered substrate S is placed. The substrate holding section 20 includes a temperature control unit 70 for controlling the temperature of the placed substrate S to a temperature suitable for uniform drying. The temperature control unit 70 controls the temperature of the substrate S or the solution film F on the substrate S by controlling the temperature of the substrate holding section 20. The temperature control unit 70 may typically include a heater for heating the substrate holding section 20. The temperature control unit 70 may also include a cooler for cooling the substrate holding section 20. The temperature control unit 70 controls the temperature of the substrate holding section 20 by heating and / or cooling it.

[0023] The temperature control unit 70 controls multiple regions of the substrate holding unit 20 to the same temperature or different temperatures from each other so that the substrate S has a uniform temperature distribution. Preferably, the temperature control unit 70 controls the temperature so that the temperature difference between multiple regions of the substrate S held by the substrate holding unit 20 is within 10°C. More preferably, the temperature control unit 70 controls the temperature so that the temperature difference between multiple regions of the substrate S held by the substrate holding unit 20 is within 5°C. The temperature control unit 70 controls the temperature of the substrate holding unit 20 so that the temperature of the substrate S is within a predetermined range of 0°C to 100°C. For example, heating the substrate holding unit 20 can speed up the drying rate of the solution film F applied on the substrate S, and cooling the substrate holding unit 20 can decrease the drying rate of the solution film F.

[0024] Inside the container 10, the cover unit 40 is positioned so as to face the substrate holding portion 20 in the Z direction. That is, the cover unit 40 is positioned to face the main surface MS of the substrate S placed on the substrate holding portion 20. The main material of the cover unit 40 is metal, and for example, stainless steel or aluminum is preferably used. As for stainless steel, for example, austenitic stainless steel containing 0.045% or less phosphorus and 0.030% or less sulfur (i.e., stainless steel specified as SUS304 in the Japanese Industrial Standards: JIS) is preferred.

[0025] The cover unit 40 is supported by a support mechanism (not shown) that allows it to move up and down in the Z direction within the container 10. When loading the substrate S into the container 10 and placing it on the substrate holding section 20, or when moving the substrate S away from the substrate holding section 20 and transporting it out of the container 10, the cover unit 40 can move in the Z-plus direction to prevent interference with the substrate S or the substrate transport mechanism. When reducing the pressure inside the container 10 to dry the solution film F, the cover unit 40 is positioned in a predetermined location close to the substrate S in the Z direction.

[0026] In this embodiment, when drying the solution film F by reducing the pressure inside the container 10, the space above the area where the solution film F is placed is covered with a cover unit 40 to control the flow of steam, in order to prevent uneven drying of the solution film F depending on its location on the substrate S.

[0027] Unlike the partition member described in Patent Document 1, the cover unit 40 is positioned at a predetermined distance from the substrate S, rather than being in close contact with the substrate S in the vicinity of the area where the solution film F is formed. In the method described in Patent Document 1, there were concerns about a decrease in product quality and manufacturing yield due to the partition member being in close contact with the substrate. However, according to this embodiment, since the cover unit 40 and the substrate S are positioned at a distance from each other during the drying process, such problems are prevented.

[0028] The cover unit 40 divides the space above the substrate S into a first space SP1, which is above the region where the solution film F is formed (first region), and a second space SP2, which is above the region outside the region where the solution film F is formed (second region). The space outside the cover unit 40 within the container 10, that is, the space surrounding the first space SP1 and the second space SP2, is called the third space SP3. The inside of the container 10 is divided into the first space SP1, the second space SP2, and the third space SP3 by the cover unit 40.

[0029] The first space SP1 is the space surrounded by the substrate S, the top plate 43A, and the side wall 44, and the second space SP2 is the space surrounded by the substrate S, the top plate 43B, the side wall 44, and the side wall 45. In the following description, the part of the cover unit 40 composed of the top plate 43A and the side wall 44, that is, the part that defines the first space SP1, may be conveniently referred to as the rectifier box SB. The second space SP2 can also be referred to as the peripheral space arranged around the rectifier box SB.

[0030] As will be described later, the second space SP2 is controlled to have a higher pressure than the first space SP1. In other words, the second space SP2 functions as a pressure adjustment chamber within the container 10, but in order to improve the controllability of pressure adjustment, the cover unit 40 is configured such that the volume of the second space SP2 is smaller than the volume of the first space SP1.

[0031] The top plate 43A of the rectifier box SB is positioned parallel to the upper surface of the substrate holding section 20 or the main surface MS of the substrate S, and the top plate 43A is provided with a plurality of openings 42. The openings 42 connect the third space SP3, located outside the cover unit 40 inside the container 10, with the first space SP1. When the cover unit 40 covers the substrate S and dries the solution film F, the first space SP1 communicates with the third space SP3 through the plurality of openings 42. Therefore, the solvent gas evaporated from the solution film F moves from the first space SP1 to the third space SP3 and can be exhausted to the outside of the container 10 by the decompression mechanism 30. The arrangement pattern and density of the openings 42 on the top plate 43A, as well as the shape of each opening 42, can be set to improve the uniformity of the drying rate of the solution film F at each position on the substrate S.

[0032] The first space SP1 and the second space SP2 are connected via a gap G1 between the side wall 44 and the substrate S, and the second space SP2 and the third space SP3 are connected via a gap G2 between the side wall 45 and the substrate S.

[0033] The container 10 is equipped with a gas inlet 52 capable of supplying an inert gas, solvent vapor, or a mixture thereof to the second space SP2, and a gas inlet 51 capable of introducing an inert gas to the third space SP3. The gas inlet 51 and gas inlet 52 are examples of pressure adjustment means. The pressure in the third space SP3 can be adjusted by exhausting by the pressure reduction mechanism 30 and supplying gas from the gas inlet 51, and the pressure in the second space SP2 can be adjusted by supplying gas from the gas inlet 52. The gas inlet 51 and gas inlet 52 may be flexible tubes, such as fiberglass tubes, or bellows. Valves (not shown) are provided in the gas inlet 51 and gas inlet 52.

[0034] Furthermore, a gas analyzer 60 for analyzing the atmosphere of the third space SP3 is connected to the container 10 via a connecting member 62. The gas from the third space SP3 is introduced into the gas inlet of the gas analyzer 60 via the connecting member 62. The gas analyzer 60 is, for example, a residual gas analyzer (RGA), such as a mass spectrometer. The specific gas detected by the gas analyzer 60 is the vapor (gas) of the solvent evaporating from the solution film F of the substrate S. The connecting member 62 may be a flexible tube, such as a fiberglass tube, or a bellows. The connecting member 62 has a first end and a second end, the first end being connected to the gas inlet of the gas analyzer 60, and the second end being positioned to protrude into the third space SP3 of the container 10. In some cases, the second end may be positioned to protrude into the first space SP1 of the cover unit 40, and the gas analyzer 60 may be configured to analyze the gas in the first space SP1.

[0035] (Circuit board transport mechanism) Next, a transport mechanism for loading substrates S into or out of container 10 will be described. The external pressure of container 10 is, for example, atmospheric pressure, i.e., 1 atmosphere, but when loading / unloading substrates S, the pressure inside container 10 is made the same as the external pressure.

[0036] Figure 2 is a schematic diagram illustrating the operation of the transport mechanism when loading a substrate S into the container 10. Loading and unloading the substrate S into and out of the container 10 is performed by a transport robot RB located outside the container 10. The transport robot RB loads the substrate S onto the substrate holding section 20 or unloads the substrate S from the substrate holding section 20, for example, in response to a command from the control unit 90. The substrate S can be transported through an opening 13 in the container 10 that is located along the transport route. The opening 13 for transporting the substrate can be closed by a gate valve 12 when not transporting the substrate S. The gate valve 12 is a mechanical shutter and may be part of the container 10 that defines the third space SP3.

[0037] The gate valve 12 and the opening 13 are positioned on the movement path of the substrate S being loaded into / unloaded from the container 10. The substrate S coated with the solution film F to be dried is loaded into the container 10 through the gate valve 12. The substrate S that has undergone the drying process is then unloaded from the container 10 through the gate valve 12.

[0038] When the robot hand RH of the transport robot RB holds the substrate S and loads / unloads it, if the cover unit 40 is positioned in the location where the drying process is performed (shown by a dotted line in Figure 2), there is a possibility that the robot hand RH and the substrate S may interfere with the cover unit 40. Therefore, when loading / unloading the substrate S, the cover unit 40 can be raised using a lifting mechanism (not shown) and retracted to a height where interference does not occur, as shown by a solid line in Figure 2.

[0039] Furthermore, at times other than during loading / unloading, the cover unit 40 can be lowered to a position close to the substrate S or the substrate holding part 20, and the cover unit 40 can be set to a height that defines the first space SP1 and the second space SP2.

[0040] The substrate holding section 20 is equipped with a lifting pin PI configured to extend and retract relative to the holding surface of the substrate holding section 20. By making the lifting pin PI protrude relative to the holding surface, the transport robot RB can place the substrate S on the lifting pin PI, making it easy to receive the substrate S. By lowering the lifting pin PI on which the substrate S is placed from above the upper surface of the substrate holding section 20, the substrate S placed on the lifting pin PI can be placed onto the substrate holding section 20.

[0041] (Pressure control mechanism) When the substrate S is subjected to vacuum drying, the control unit 90 drives the vacuum mechanism 30 to reduce the pressure inside the container 10. When the vacuum mechanism 30 starts to evacuate, the pressure in the third space SP3 inside the container 10 decreases. As a result, the rectifier box SB is also evacuated through the opening 42, and the pressure decreases. Solvent vapor evaporated from the solution film F of the substrate S moves from the first space SB1 to the third space SP3 through the opening 42 and is evacuated by the vacuum mechanism 30.

[0042] In this embodiment, the rectifier box SB is positioned so as to be separated from the substrate S by a gap G1 of a predetermined distance. If the second space SP2 were not provided, and space SP1 within the rectifier box SB were directly connected to the third space SP3 via gap G1, then the solvent vapor in space SP1 would be exhausted not only from the opening 42 but also from gap G1. In that case, the drying conditions of the solution film F positioned close to gap G1 would be different from the drying conditions of the solution film F positioned in the center of the substrate S.

[0043] Figure 3 is a schematic diagram showing a portion of the left side of the container 10 to explain the behavior of solvent vapor in the case where the first space SP1 is directly connected to the third space SP3 via a gap G1. Figure 4 is also a schematic diagram showing a portion of the left side of the container 10 to explain the behavior of solvent vapor in this embodiment. In Figures 3 and 4, the pressure distribution along line AA, which represents a horizontal plane at a close distance from the substrate S in the Z direction, is illustrated as a graph.

[0044] When the depressurization mechanism 30 starts evacuating and the pressure in the third space SP3 inside the container 10 decreases, the pressure in the first space SP1 inside the rectifier box SB also decreases, and the solvent begins to evaporate from the solution film F. In the space above the region where the solution film F is located, solvent vapor fills the area where the distance from the substrate S is small and the opening 42 is far, as shown by line AA. Therefore, the pressure directly above any solution film F can be approximately equal to the vapor pressure of the solvent.

[0045] However, as shown in Figure 3, if the first space SP1 is directly connected to the third space SP3 via the gap G1, solvent vapor flows out from the gap G1 towards the third space SP3, as indicated by the arrow in the figure. Therefore, the pressure directly above the solution film F located near the gap G1 is lower than the pressure directly above the solution film F located closer to the center of the substrate S, resulting in uneven drying speed.

[0046] On the other hand, in this embodiment, as shown in Figure 4, a partitioned second space SP2 is positioned between the first space SP1 and the third space SP3, and the second space SP2 is configured to be supplied with an inert gas, solvent vapor, or a mixture thereof from the gas introduction unit 52. That is, when performing vacuum drying, gas can be supplied to the second space SP2 from the gas introduction unit 52 at an appropriate flow rate, making the pressure in the second space SP2 higher than the pressure in the first space SP1 and the pressure in the third space SP3. This reduces the difference in pressure directly above the solution film F located near the gap G1 and the pressure directly above the solution film F located closer to the center of the substrate S, thereby making the drying speed more uniform. Since the pressures are in the order of second space SP2, first space SP1, and third space SP3 from highest to lowest, some of the gas supplied to the second space SP2 from the gas introduction unit 52 can flow to the third space SP3 through the gap G2. In this embodiment, since neither the side wall 44 nor the side wall 45 comes into contact with the substrate S, there is no risk of reduced product quality or decreased manufacturing yield due to contact.

[0047] The gas supplied from the gas inlet 52 to the second space SP2 is preferably an inert gas, solvent vapor, or a mixture thereof, but clean dry air may also be used. As the inert gas, at least one gas selected from, for example, nitrogen, helium, neon, krypton, argon, and xenon is preferred.

[0048] Furthermore, as the solvent vapor supplied from the gas introduction section 52 to the second space SP2, a solvent vapor whose saturated vapor pressure is equal to or greater than the saturated vapor pressure of the solution film F coated on the substrate S is preferably used. For example, one or more materials selected from the following group of solvents can be used, including cyclohexanol, cyclohexanone, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, tripylene glycol, 1,3-butanediol, 2,3-butanediol, 1,4-butanediol, propylene glycol, hexylene glycol, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diacetone alcohol, γ-butyrolactone, ethyl lactate, n-hexyl acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, and the like.

[0049] For example, if the solvent of the solution film F coated on the substrate S is cyclohexanone (saturated vapor pressure 0.45 kPa (20°C)), the solvent vapor supplied to the second space SP2 may be selected from a solvent species with a higher saturated vapor pressure than cyclohexanone. For example, vapor of cyclohexanone (saturated vapor pressure 0.45 kPa (20°C)), which is the same type as the solvent of the solution film F, or vapor of propylene glycol monomethyl ether acetate (saturated vapor pressure 0.46 kPa (20°C)) are preferably selected.

[0050] Next, an example of a gas supply mechanism that supplies gas to the second space SP2 via the gas introduction section 52 will be described. Figure 5 is a schematic diagram illustrating the configuration of the gas supply mechanism GU, which supplies solvent vapor 25 and / or inert gas 34. Each element constituting the gas supply mechanism is controlled by the control unit 90.

[0051] In the gas supply mechanism GU, a carrier gas CG is introduced from the outside via piping 26. An inert gas such as nitrogen or argon is used as the carrier gas CG. The flow rate of the carrier gas CG is adjusted by a flow regulator 21, and its temperature is adjusted by a temperature regulator 29 before it is introduced into a bubbling container 22. The bubbling container 22 stores solvent A (liquid), which is the source of the solvent vapor supplied to the second space SP2. Solvent A is adjusted to an appropriate temperature by a temperature regulator 23. The carrier gas CG is ejected from the end of the pipe into the liquid solvent A. The bubbles 28 of the carrier gas CG, containing the solvent A vapor, reach the flow control valve 27 via a check valve 24 from the bubbling container 22. The amount of solvent vapor per unit volume contained in the bubbles 28 can be adjusted by the temperature regulators 29 and 23. Furthermore, the amount of carrier gas (bubbles 28) containing solvent vapor can be adjusted by the carrier gas flow regulator 21. Furthermore, the check valve 24 has the function of preventing the purge gas PG, described below, from flowing back into the bubbling container 22.

[0052] In the gas supply mechanism GU, purge gas PG is introduced from the outside via piping 33 as an inert gas. While nitrogen gas or argon gas are used as purge gas PG, any gas with a different composition from the solvent of the solution film F may be used, such as clean dry air. The flow rate of the purge gas PG is adjusted by the flow regulator 31, and its temperature is adjusted by the temperature regulator 32 before it reaches the flow control valve 27.

[0053] The flow path control valve 27 may be a three-way valve capable of selecting either the vapor of solvent A or the purge gas PG to flow to the gas inlet 52, or not flowing either to the gas inlet 52. Alternatively, the flow path control valve 27 may also have a function to mix the vapor of solvent A and the purge gas PG, control the mixing ratio, and flow the mixture to the gas inlet 52.

[0054] Furthermore, if, for example, the solution film F applied to the substrate S contains multiple types of solvents with different saturated vapor pressures, it is preferable to be able to supply vapors of multiple types of solvents with different saturated vapor pressures to the second space SP2. Figure 6 is a schematic diagram illustrating a suitable gas supply mechanism configuration in that case, in which a gas supply mechanism GUA that supplies vapor of solvent A and a gas supply mechanism GUB that supplies vapor of solvent B are connected to a flow path control valve 53. The flow path control valve 53 may be a three-way valve that can allow either the vapor of solvent A or the vapor of solvent B to flow to the gas inlet 52, or it may also be able to prevent either solvent vapor from flowing to the gas inlet 52. The flow path control valve 53 may also have a function to mix the vapor of solvent A and the vapor of solvent B, control the mixing ratio, and flow the mixture to the gas inlet 52.

[0055] (Drying method) This document describes a drying process (substrate processing method) for drying substrates using a vacuum drying apparatus DU. The drying process is performed in the manufacturing process of, for example, organic EL panels, along with processes such as coating the substrate with a solution and transporting the substrate. Figure 7 is a flowchart illustrating the procedure for the drying process. For example, after a solution is applied to the substrate by an inkjet device, the drying process is performed.

[0056] First, in step S1, the vacuum drying apparatus DU prepares to receive the substrate. For example, the control unit 90 controls the temperature control unit 70 to adjust the temperature of the substrate holding unit 20 to a temperature suitable for starting the drying process.

[0057] Next, in step S2, the control unit 90 retracts the cover unit 40 upward and operates the transport mechanism described with reference to Figure 2 to set the substrate S in a predetermined position on the substrate holding unit 20. The lifting pin PI waits in a position where it protrudes above the upper surface of the substrate holding unit 20 in order to receive the substrate S. The control unit 90 moves the robot hand RH, which is holding the substrate S, into the inside of the container 10. After the substrate S arrives directly above the substrate holding unit 20, the control unit 90 lowers the robot hand RH, places the substrate S on the lifting pin PI, lowers the robot hand RH further, and then retracts the robot hand RH from the container 10.

[0058] Subsequently, the control unit 90 lowers the lifting pin PI to place the substrate S on the substrate holder 20. This completes the setting of the substrate S on the substrate holder 20. Once the substrate S is set on the substrate holder 20, the control unit 90 lowers the cover unit 40, positioning the cover unit 40 so that the side walls 44 and 45 are on the substrate S separated by predetermined gaps G1 and G2. The control unit 90 then moves the gate valve 12 to the closed position to seal the internal space of the container 10.

[0059] Next, in step S3, the control unit 90 executes a reduced-pressure drying process. The control unit 90 monitors the measured values ​​from the gas analyzer 60 and controls the pressure reduction mechanism 30 to reduce the pressure inside the container 10. The control unit 90 controls the pressure inside the container 10 according to the profile shown in Figure 8, for example. In this example, the drying process is explained by dividing it into four processes from period D1 to period D4, but in actual drying processes, the process may be divided into even more detailed steps for control.

[0060] Figure 8 shows a graph illustrating the temporal change in pressure in the third space SP3 within the container 10 when the solution film F contains only one type of solvent. The pressure can be measured using a gas analyzer 60. When the decompression mechanism 30 starts evacuating the container 10 at time T1, the pressure inside the container 10 decreases from atmospheric pressure over time. Period D1 is the process of reducing the pressure in the third space SP3 from atmospheric pressure to a predetermined pressure P1.

[0061] At time T2, when the pressure inside the container 10 drops to a pressure P1 slightly higher than the saturated vapor pressure of the solvent contained in the solution film F, the control unit 90 controls the pressure inside the container 10 to maintain pressure P1. This is because if the rate at which the solvent evaporates from the solution film F is too fast in the initial stage of the drying process, the shape and quality of the solid film formed after drying will deteriorate. Therefore, the evaporation rate is limited by maintaining the first space SP1 at a pressure slightly higher than the saturated vapor pressure. Period D2 is the process of maintaining the pressure in the third space SP3 at a predetermined pressure P1, and the control unit 90 controls the depressurization mechanism 30 and the gas introduction unit 51 to maintain pressure P1.

[0062] Here, referring to Figure 9, the pressure control during the period before and after the region PCNT enclosed by the dotted line in Figure 8, i.e., period D2, will be explained in detail. As mentioned above, when the pressure inside the container 10 is reduced by the pressure reduction mechanism 30 and the pressure in the third space SP3 decreases to P1 at time T2, the control unit 90 controls the pressure reduction mechanism 30 and the gas introduction unit 51 to maintain the pressure in the third space SP3 at P1. The first space SP1 in the rectifier box SB is in communication with the third space SP3 via the opening 42 and is therefore reduced in pressure, but the solution film F acts as a gas source and generates solvent vapor, so solvent vapor is supplied to the first space SP1. For this reason, as shown in Figure 9, the pressure in the first space SP1 does not perfectly follow the pressure in the third space SP3, but becomes higher than the pressure in the third space SP3.

[0063] At that time, as explained with reference to Figure 4, the control unit 90 supplies gas from the gas supply mechanism U to the second space SP2 via the gas introduction unit 52 so that the pressure in the second space SP2 becomes greater than the pressure in the first space SP1. That is, as shown in Figure 9, until time T3 when drying has progressed to a certain extent and the shape of the solution film F has stabilized, the pressure in the second space SP2 is controlled to be greater than the pressure in the first space SP1. As a result, the solution film F on the substrate S dries uniformly regardless of location.

[0064] In the initial stages of period D2, the solvent evaporates actively from the solution film F, resulting in a higher pressure in the first space SP1. However, as time progresses, the evaporation rate from the solution film F decreases, causing the pressure in the first space SP1 to gradually approach the pressure P1 of the third space SP3. To prevent significant changes in the gas flow from the second space SP2 to the first space SP1 during period D2, it is preferable to control the pressure in the second space SP2 in two or more stages, for example, so that the pressure difference between the second space SP2 and the first space SP1 remains constant.

[0065] As a method for controlling the pressure in the second space SP2, for example, during period D1 when the pressure in the third space SP3 is reduced, gas is supplied to the second space SP2 from the gas introduction section 52, and during period D2, as shown in Figure 9, the pressure difference with the first space SP1 is controlled to be as constant as possible. For example, when supplying an inert gas to the second space SP2, the flow rate can be adjusted with the flow rate regulator 31 of the purge gas PG in the gas supply mechanism GU shown in Figure 5 to control the pressure in the second space SP2. Alternatively, for example, when supplying solvent vapor to the second space SP2 together with a carrier gas, the flow rate and solvent vapor content can be adjusted with the temperature regulator 29, temperature regulator 23 and the carrier gas flow rate regulator 21 in the gas supply mechanism GU shown in Figure 5 to control the pressure in the second space SP2. Furthermore, when supplying gas to the second space SP2 from the gas supply mechanism shown in Figure 6, an appropriate type of solvent vapor can be supplied together with the carrier gas in accordance with the saturated vapor pressure of the solvent to be evaporated from the solution film F.

[0066] After period D2 has elapsed and a certain amount of solvent has evaporated from the solution film F, the shape of the solution film F stabilizes, and thereafter, even if the evaporation rate of the solvent is increased, deterioration of the shape and quality of the solid film will not occur. Therefore, as shown in Figure 8, after time T3, the control unit 90 controls the depressurization mechanism 30 to reduce the pressure inside the container 10 to a pressure P2 that is less than the saturated vapor pressure of the solvent, thereby shortening the time required for the drying process. Period D3 is the process of reducing the pressure in the third space SP3 from pressure P1 to a predetermined pressure P2. After time T3, the supply of gas from the gas introduction unit 52 to the second space SP2 can be stopped.

[0067] Furthermore, period D4 is the process of maintaining the pressure in the third space SP3 at pressure P2. During period D4, the control unit 90 controls the pressure reduction mechanism 30 and the gas introduction unit 51 to maintain pressure P2.

[0068] In step S4, it is determined whether a sufficient period D4 has elapsed at pressure P2, or whether the solvent has dried sufficiently based on the measurement from the gas analyzer 60. If drying is not sufficiently complete (step S4: No), the pressure P2 is maintained and vacuum drying is continued. If the solution film F contains two or more solvents, vacuum drying is performed near the saturated vapor pressure of each solvent, starting with those with the highest saturated vapor pressures. In this case, in step S4, it is determined whether drying is complete for the solvent with the lowest saturated vapor pressure.

[0069] If a sufficient period D4 has elapsed at pressure P2, or if the measurement from the gas analyzer 60 indicates that the solvent is sufficiently dry (step S4: Yes), the vacuum drying is terminated. Specifically, the control unit 90 closes the valve connecting the vacuum mechanism 30 and the container 10, introduces gas from the gas inlet 51 to return the inside of the container 10 to atmospheric pressure, and in step S5, the substrate S, for which the drying process is complete, is removed from the vacuum drying apparatus DU.

[0070] (Regarding the connecting section) The gap G1 connecting the second space SP2 and the first space SP1, and the gap G2 connecting the second space SP2 and the third space SP3 will be described. As already explained, during the drying of the solution film F, the side walls 44 and 45 are not in contact with the substrate S, so the gas supplied from the gas introduction section 52 to the second space SP2 is divided into the first space SP1 side and the third space SP3 side, as shown in Figure 4. Given the purpose of providing the second space SP2, a structure in which the gas pressure supplied from the gas introduction section 52 to the second space SP2 is effectively transmitted to the first space SP1 is preferable. That is, it is preferable that the conductance of the gap G1 connecting the second space SP2 and the first space SP1 is greater than the conductance of the gap G2 connecting the second space SP2 and the third space SP3.

[0071] Figure 10(a) is a diagram illustrating an example of a structure that realizes the relationship of magnitude of conductance, and is a schematic diagram showing a part of the left side inside the container 10. As shown in the figure, the distance between the side wall 44 and the substrate S is greater than the distance between the side wall 45 and the substrate S, so that the relationship gap G2 < gap G1 is satisfied. In other words, in the direction perpendicular to the main surface of the substrate S, the distance between the side wall 44 and the substrate S is greater than the distance between the side wall 45 and the substrate S. It is preferable that the gap G2 is 50% or less of the gap G1, for example, if the gap G1 is 1.0 mm, it is preferable that the gap G2 be 0.5 mm or less.

[0072] Furthermore, Figure 10(b) is a diagram illustrating another example of a structure that realizes the relationship of magnitude of conductance, and is a schematic diagram showing a part of the left side inside the container 10. As shown in the figure, in the direction parallel to the main surface of the substrate S, the length L2 of the part connecting the second space SP2 and the third space SP3 is made larger than the length L1 of the part connecting the second space SP2 and the first space SP1. That is, the structure is such that the relationship L2 > L1 holds. It is preferable that the length L2 is 200% or more of the length L1, for example, if the length L1 is 1.0 mm, it is preferable that the length L2 be 2.0 mm or more.

[0073] Alternatively, Figures 10(a) and 10(b) can be combined to set the distances perpendicular to the main surface of the substrate and parallel to the main surface of the substrate, respectively, and adjust the conductance.

[0074] Furthermore, Figure 11 is a diagram illustrating yet another example of a structure that realizes the relationship of magnitude of conductance, and is a schematic diagram showing a portion of the left side inside the container 10. As shown in the figure, the side wall 45 may be in contact with the upper surface of the substrate holding part 20, and there may be no connecting passage directly linking the second space SP2 and the third space SP3. Even with this configuration, the cover unit 40 does not come into contact with the substrate S, and the drying rate of the solution film is made uniform, so there is no decrease in product quality or manufacturing yield.

[0075] (Surface treatment of the components defining the second space SP2) As mentioned above, solvent vapor may be supplied to the second space SP2 from the gas inlet 52. The second space SP2 is defined by the side walls 44, 45, and top plate 43B surrounding the substrate S above it. It is desirable that at least a portion of the surface of these three components on the second space SP2 side is a surface that is difficult for solvent molecules to adhere to (or adsorb). When solvent vapor is supplied from the gas inlet 52, if solvent molecules adhere to (or adsorb) the side walls 44, 45, and top plate 43B, the attached (or adsorbed) solvent molecules will detach and be released into the second space SP2 after the supply from the gas inlet 52 is stopped. This can reduce the accuracy of pressure control in the second space SP2 by the control unit 90.

[0076] The inventors, through diligent research, have found a correlation between the adhesion of solvent molecules to the surface of a component in a reduced-pressure atmosphere and the receding contact angle of the component surface. In particular, it was found that adhesion of solvent molecules to the component surface can be suppressed when the receding contact angle of the component surface is high. The receding contact angle evaluates the adhesive force and the force that pulls away solvent molecules, and is therefore considered to be related to the adhesion of solvent molecules in a reduced-pressure atmosphere.

[0077] Figure 12 is a diagram illustrating an example of a surface-treated component configuration, and is a schematic diagram showing a portion of the left side inside the container 10. As shown in the figure, at least the surfaces of the side walls 44, 45, and top plate 43B facing the second space SP2 are coated with a liquid-repellent material 46, creating a structure that makes it difficult for solvent molecules to adhere. To ensure controllability of the pressure in the second space SP2, it is preferable to use a material as the liquid-repellent material 46 that has a receding contact angle of 90 degrees or more, as evaluated with pure water.

[0078] Examples of liquid-repellent materials 46 may include fluorine-containing resins such as tetrafluoroethylene resin (PTFE), perfluoroalkoxy resin (PFA), fluoroethylene propylene resin (FEP), ethylene tetrafluoroethylene resin, and polychlorotrifluoroethylene resin, as well as fluorine-containing silane coupling agents.

[0079] [Embodiment 2] Embodiment 1 shows a vacuum drying apparatus (substrate processing apparatus) in which the space above the substrate S is covered with a cover unit 40, dividing it into a single second space SP2 and a third space SP3 at its periphery. However, the embodiments of the present invention are not limited to this.

[0080] Depending on the application of the substrate S, the areas to which the solution film F is applied may be spaced apart at multiple locations on the substrate S. For example, when manufacturing display panel substrates using a so-called multi-chamfering process, multiple display panel films are formed on a large-area substrate S at once, and then the substrate S is diced to separate it into multiple display panel substrates.

[0081] In such cases, if the space above the substrate S, where the regions coated with the solution film F are spaced apart, is covered with a single rectifier box SB, the pressure distribution of solvent vapor in the atmosphere above each region will differ, potentially causing variations in the drying rate of the solution film F within the substrate S. Therefore, in this embodiment, a first space SP1 is defined for each region coated with the solution film F, and the cover unit 40 is configured such that a second space SP2 with a higher pressure than the first space SP1 is placed around each first space SP1.

[0082] Regarding the vacuum drying apparatus DU according to Embodiment 2 described below, the explanation of matters common to Embodiment 1 will be simplified or omitted. In this embodiment, the configuration of the cover unit 40 differs from that of Embodiment 1.

[0083] As an example of Embodiment 2, with reference to Figure 13, a cover unit 40 of a vacuum drying apparatus DU, which is suitably used when forming films for two display panels on a substrate S in one go, will be described. As shown in the figure, on the substrate S, a solution film F corresponding to a large number of display elements is arranged and coated on each of the first coating area FA1 and the second coating area FA2, which are spaced apart, using, for example, an inkjet coating apparatus (not shown). After the drying process using the vacuum drying apparatus DU is completed, the substrate S is cut and used as a display substrate including the first coating area FA1 and a display substrate including the second coating area FA2.

[0084] In Figure 13, to facilitate understanding of the structure of the cover unit 40, the parts defining the two first spaces SP1 corresponding to the two regions and the parts defining the connected second space SP2 surrounding the two first spaces SP1 are shown separately, one above the other. In reality, these are connected as a single unit to constitute the cover unit 40.

[0085] The two first spaces SP1 are defined by side walls 44 and a top plate 43A with an opening 42. The connected second space SP2, which surrounds the two first spaces SP1, is defined by side walls 45 and a top plate 43B.

[0086] In this embodiment as well, the cover unit 40 is positioned so that the side walls 44 and 45 do not come into contact with the substrate S, so that contact does not cause a decrease in product quality or manufacturing yield. Also, similar to Embodiment 1, the pressure in the second space SP2 is controlled to be higher than the pressure in the first space SP1, so that the drying rate of the solution film F is made uniform within each spaced-apart region on the substrate S and between each region, and a highly uniform solid film can be formed.

[0087] Figure 13 shows an example of a cover unit 40 in which a solution film F is formed in two spaced-apart coating regions on a substrate S. However, the number of coating regions on the substrate in which the solution film F is formed is not limited to two, but can be arbitrary. For example, as shown in Figure 14, a solution film may be formed in six spaced-apart coating regions FA1 to FA6 on the substrate S, and films for six display panels may be formed at once.

[0088] [Other embodiments] Furthermore, the present invention is not limited to the embodiments described above, and many modifications are possible within the technical concept of the present invention. For example, all or part of the different embodiments described above may be combined and implemented.

[0089] Methods for manufacturing articles using the substrate processing apparatus described above are also included in embodiments of the present invention. Manufacturing apparatuses and systems for manufacturing articles equipped with the substrate processing apparatus described above are also included in embodiments of the present invention.

[0090] For example, an article can be manufactured by forming a solution film on a substrate using a coating device such as an inkjet coating device or a printing device (solution film formation step), and then drying the solution film using the substrate processing device or substrate processing method described above (drying step). The solution film may be formed from a liquid containing a functional material for forming functional thin films such as electrodes or optical filters or functional elements such as organic EL elements, or from a liquid containing insoluble solid components.

[0091] The substrate processing apparatus according to the embodiment may be, for example, an apparatus for manufacturing a substrate used in a display device. The substrate processing apparatus may be configured, for example, as part of a film forming apparatus for forming an organic film on a substrate. The organic film may be, for example, a hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer of an organic light-emitting diode (OLED). The process for manufacturing an organic EL element carried out by the substrate processing apparatus according to the embodiment may include a step of applying a solution containing a functional material to a substrate and drying it to form an organic film such as a hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer. The method for manufacturing an organic EL element (OLED) may include processes such as firing, cooling, dehumidification, dry cleaning, electrode formation, and sealing film formation, in addition to the vacuum drying process according to the embodiment.

[0092] The present invention is not limited to manufacturing apparatus for display device substrates; for example, it may be applied to a manufacturing apparatus for producing energy storage elements by coating a substrate with a liquid containing an electrical material and drying it. Alternatively, it may be applied to a manufacturing apparatus for producing optical elements by coating a substrate with a liquid containing an optical material such as a reflective material or an antistatic material and drying it.

[0093] The method for manufacturing articles and the manufacturing apparatus according to the embodiment provide advantageous effects in at least one of the performance, quality, productivity, and production cost of the articles.

[0094] The present invention can also be realized by supplying a program that implements one or more of the functions of the embodiments to a system or device via a network or storage medium, and by having one or more processors in the computer of that system or device read and execute the program. It can also be realized by a circuit (e.g., an ASIC) that implements one or more functions.

[0095] This specification discloses at least the following: [Matter 1] Container and A vacuum mechanism capable of reducing the pressure inside the container, The container includes a substrate holding section that holds a substrate having a film, The container comprises a cover unit that is positioned inside the container and surrounds the upper part of the substrate held by the substrate holding portion, Inside the container, a space enclosed by the cover unit and the substrate, and a third space outside the cover unit are defined. The substrate comprises a first region on which the film is formed, and a second region surrounding the first region. The space enclosed by the cover unit and the substrate comprises a first space which is the space above the first region and a second space which is the space above the second region. The cover unit comprises a first side wall, a second side wall, a first top plate, and a second top plate. The first space is enclosed by the first region, the first side wall, and the first top plate, and the first top plate has an opening that connects the first space and the third space. The second space is enclosed by the second region, the first side wall, the second side wall, and the second top plate. The first space and the second space are in communication through the gap between the first side wall and the substrate. The gas supply mechanism provides gas to the second space for at least a portion of the period during which the depressurization mechanism depressurizes the inside of the container. A substrate processing apparatus characterized by the following: [Matter 2] The gas supply mechanism supplies gas to the second space such that the pressure in the second space is greater than the pressure in the first space. A substrate processing apparatus as described in item 1, characterized by the features described above. [Matter 3] The gas supply mechanism supplies a carrier gas containing a purge gas or solvent vapor to the second space. A substrate processing apparatus according to item 1 or 2, characterized by the above. [Matter 4] The gas supply mechanism can select either a carrier gas containing a first type of solvent vapor or a carrier gas containing a second type of solvent vapor and supply it to the second space. A substrate processing apparatus according to any one of items 1 to 3, characterized by the features described herein. [Matter 5] The gas supply mechanism supplies a carrier gas containing solvent vapor of a solvent with a saturation vapor pressure higher than that of the solvent contained in the film on the substrate to the second space. A substrate processing apparatus according to any one of items 1 to 4, characterized by the features described herein. [Matter 6] The gas supply mechanism supplies gas to the second space by changing the supply amount in at least two stages. A substrate processing apparatus according to any one of items 1 to 5, characterized by the features described herein. [Matter 7] The pressure in the third space is reduced by the pressure reduction mechanism to a first pressure, then maintained at the first pressure for a first period, and thereafter reduced to a second pressure smaller than the first pressure. A substrate processing apparatus according to any one of items 1 to 6, characterized by the features described herein. [Matter 8] The conductance between the first space and the second space is greater than the conductance between the second space and the third space. A substrate processing apparatus according to any one of items 1 to 7, characterized by the features described herein. [Matter 9] In a direction perpendicular to the main surface of the substrate, the distance between the first side wall and the substrate is greater than the distance between the second side wall and the substrate. A substrate processing apparatus according to any one of items 1 to 8, characterized by the above. [Matter 10] In the direction along the main surface of the substrate, the length of the portion where the second side wall and the substrate face each other is greater than the length of the portion where the first side wall and the substrate face each other. A substrate processing apparatus according to any one of items 1 to 9, characterized by the features described herein. [Matter 11] The volume of the second space is smaller than the volume of the first space. A substrate processing apparatus according to any one of items 1 to 10, characterized by the features described herein. [Matter 12] The first side wall, the second side wall, and the second top plate are each coated with a liquid-repellent material on at least a portion of the surface facing the second space. A substrate processing apparatus according to any one of items 1 to 11, characterized by the features described herein. [Matter 13] The substrate further comprises a third region in which a film is formed at a position separated from the first region, The cover unit further comprises a third side wall and a third top plate. The space enclosed by the cover unit and the substrate further comprises a fourth space which is the space above the third region. The fourth space is enclosed by the third region, the third side wall, and the third top plate, and the third top plate has an opening that connects the fourth space and the third space. The fourth space and the second space are in communication through the gap between the third side wall and the substrate. A substrate processing apparatus according to any one of items 1 to 12, characterized by the features described herein. [Matter 14] The aforementioned film is a liquid film containing a functional material. A substrate processing apparatus according to any one of items 1 to 13, characterized by the features described herein. [Matter 15] The aforementioned film is a liquid film for forming one of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer of an organic EL element. A substrate processing apparatus according to any one of items 1 to 14, characterized by the features described herein. [Matter 16] The process includes a step of drying the film applied to the substrate using a substrate processing apparatus described in any one of items 1 to 15. A method for manufacturing an article, characterized by the following: [Matter 17] The aforementioned film is a liquid film containing a functional material. A method for manufacturing an article as described in item 16, characterized by the following: [Matter 18] The aforementioned film is a liquid film for forming one of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer of an organic EL element. A method for manufacturing an article as described in item 16 or 17, characterized by the features described herein. [Explanation of Symbols]

[0096] 10...Container / 12...Gate valve / 13...Opening / 20...Substrate holder / 21...Flow regulator / 22...Bubbling container / 23...Temperature regulator / 24...Check valve / 25...Solvent vapor / 26...Piping / 27...Flow control valve / 28...Bubbles / 29...Temperature regulator / 30...Depressurization mechanism / 31...Flow regulator / 32...Temperature regulator / 33...Piping / 40...Cover unit / 42...Opening / 43A...Top plate / 43B...Top plate / 44... ...Side wall / 45...Side wall / 46...Liquid repellent / 51...Gas inlet / 52...Gas inlet / 53...Flow control valve / 60...Gas analyzer / 62...Connecting component / 70...Temperature control unit / 90...Control unit / F...Solution film / G1...Gap / G2...Gap / GU, GUA, GUB...Gas supply mechanism / PI...Lifting pin / SP1...First space / SP2...Second space / SP3...Third space / MS...Main surface / RB...Transport robot / RH...Robot hand

Claims

1. Container and A vacuum mechanism capable of reducing the pressure inside the container, The container includes a substrate holding section that holds a substrate having a film, The container comprises a cover unit that is positioned inside the container and surrounds the upper part of the substrate held by the substrate holding portion, Inside the container, a space enclosed by the cover unit and the substrate, and a third space outside the cover unit are defined. The substrate comprises a first region on which the film is formed, and a second region surrounding the first region. The space enclosed by the cover unit and the substrate comprises a first space which is the space above the first region and a second space which is the space above the second region. The cover unit comprises a first side wall, a second side wall, a first top plate, and a second top plate. The first space is enclosed by the first region, the first side wall, and the first top plate, and the first top plate has an opening that connects the first space and the third space. The second space is enclosed by the second region, the first side wall, the second side wall, and the second top plate. The first space and the second space are in communication through the gap between the first side wall and the substrate. The gas supply mechanism provides gas to the second space for at least a portion of the period during which the depressurization mechanism depressurizes the inside of the container. A substrate processing apparatus characterized by the following:

2. The gas supply mechanism supplies gas to the second space such that the pressure in the second space is greater than the pressure in the first space. The substrate processing apparatus according to claim 1.

3. The gas supply mechanism supplies a carrier gas containing a purge gas or solvent vapor to the second space. The substrate processing apparatus according to claim 1 or 2.

4. The gas supply mechanism can select and supply to the second space either a carrier gas containing a first type of solvent vapor or a carrier gas containing a second type of solvent vapor. The substrate processing apparatus according to claim 1 or 2.

5. The gas supply mechanism supplies a carrier gas containing solvent vapor of a solvent with a saturation vapor pressure higher than that of the solvent contained in the film on the substrate to the second space. The substrate processing apparatus according to claim 1 or 2.

6. The gas supply mechanism supplies gas to the second space by changing the supply amount in at least two stages. The substrate processing apparatus according to claim 1 or 2.

7. The pressure in the third space is reduced by the pressure reduction mechanism to a first pressure, then maintained at the first pressure for a first period, and thereafter reduced to a second pressure smaller than the first pressure. The substrate processing apparatus according to claim 1 or 2.

8. The conductance between the first space and the second space is greater than the conductance between the second space and the third space. The substrate processing apparatus according to claim 1 or 2.

9. In a direction perpendicular to the main surface of the substrate, the distance between the first side wall and the substrate is greater than the distance between the second side wall and the substrate. The substrate processing apparatus according to claim 1 or 2.

10. In the direction along the main surface of the substrate, the length of the portion where the second side wall and the substrate face each other is greater than the length of the portion where the first side wall and the substrate face each other. The substrate processing apparatus according to claim 1 or 2.

11. The volume of the second space is smaller than the volume of the first space. The substrate processing apparatus according to claim 1 or 2.

12. The first side wall, the second side wall, and the second top plate are each coated with a liquid-repellent material on at least a portion of the surface facing the second space. The substrate processing apparatus according to claim 1 or 2.

13. The substrate further comprises a third region in which a film is formed at a position separated from the first region, The cover unit further comprises a third side wall and a third top plate. The space enclosed by the cover unit and the substrate further comprises a fourth space which is the space above the third region. The fourth space is enclosed by the third region, the third side wall, and the third top plate, and the third top plate has an opening that connects the fourth space and the third space. The fourth space and the second space are in communication through the gap between the third side wall and the substrate. The substrate processing apparatus according to claim 1 or 2.

14. The aforementioned film is a liquid film containing a functional material. The substrate processing apparatus according to claim 1 or 2.

15. The aforementioned film is a liquid film for forming one of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer of an organic EL element. The substrate processing apparatus according to claim 1 or 2.

16. The process includes a step of drying the film applied to the substrate using the substrate processing apparatus described in claim 1 or 2. A method for manufacturing an article, characterized by the following:

17. The aforementioned film is a liquid film containing a functional material. A method for manufacturing an article according to claim 16.

18. The aforementioned film is a liquid film for forming one of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer of an organic EL element. A method for manufacturing an article according to claim 16.

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