Extreme ultraviolet light generation device and method for manufacturing electronic devices

Abstract

Extreme ultraviolet light generators can experience problems as debris accumulates, potentially obstructing the pulsed laser beam path or altering the gas flow within the septum, thus hindering smooth exhaust. [Solution] The system comprises a chamber 2a surrounding a first space 20a, a partition wall surrounding a second space 20b and having a first opening that connects the first space and the second space, a target supply unit 26 that supplies a target 27 containing a target material to a plasma generation region 25 inside the second space, an EUV focusing mirror that focuses extreme ultraviolet light generated in the plasma generation region, a target recovery unit 28 that recovers the target that has passed through the plasma generation region and the target material debris 27a attached to the inner surface of the partition wall, a temperature controller that heats the partition wall, and a first switch that switches the opening and closing of the first opening.

Description

Technical Field

[0001] The present disclosure relates to an extreme ultraviolet light generating device and a method for manufacturing an electronic device.

Background Art

[0002] In recent years, with the miniaturization of semiconductor processes, the miniaturization of transfer patterns in photolithography of semiconductor processes has been rapidly progressing. In the next generation, microfabrication of 10 nm or less will be required. For this reason, the development of a semiconductor exposure apparatus that combines a device for generating extreme ultraviolet (EUV) light having a wavelength of about 13 nm and a reduction projection reflective optical system is expected.

[0003] As an EUV light generating device, the development of an LPP (Laser Produced Plasma) type device that uses plasma generated by irradiating a target material with pulsed laser light is progressing.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

[0005] An extreme ultraviolet light generating device according to one aspect of the present disclosure includes a chamber surrounding a first space, a partition wall surrounding a second space and having a first opening that communicates the first space and the second space, a target supply unit that supplies a target containing a target material to a plasma generation region inside the second space, an EUV condenser mirror that condenses extreme ultraviolet light generated in the plasma generation region, a target recovery unit that recovers attachment debris of the target that has passed through the plasma generation region and the target material attached to the inner surface of the partition wall, a temperature adjuster that heats the partition wall, and a first switch that switches the opening and closing of the first opening.

[0006] A method for manufacturing an electronic device according to one aspect of the present disclosure includes generating extreme ultraviolet light using an extreme ultraviolet light generation apparatus comprising: a chamber surrounding a first space; a partition wall surrounding a second space and having a first opening that connects the first space and the second space; a target supply unit that supplies a target containing a target material to a plasma generation region inside the second space; an EUV focusing mirror that focuses extreme ultraviolet light generated in the plasma generation region; a target recovery unit that recovers the target that has passed through the plasma generation region and the target material attached to the inner surface of the partition wall; a temperature controller that heats the partition wall; and a first switch that switches the opening and closing of the first opening. The extreme ultraviolet light is output to an exposure apparatus, and the extreme ultraviolet light is exposed onto a photosensitive substrate in the exposure apparatus in order to manufacture an electronic device.

[0007] A method for manufacturing an electronic device according to one aspect of the present disclosure includes irradiating a mask with extreme ultraviolet light generated by an extreme ultraviolet light generation device, which comprises an extreme ultraviolet light generation device comprising: [Brief explanation of the drawing]

[0008] Some embodiments of this disclosure are described below, merely as examples, with reference to the accompanying drawings. [Figure 1] Figure 1 shows the configuration of an LPP-type EUV light generation system. [Figure 2] Figure 2 shows the configuration of the EUV light generation system for the comparative example. [Figure 3] Figure 3 shows the configuration of the EUV light generation apparatus shown in Figure 2. [Figure 4] Figure 4 shows the configuration of the EUV light generation system according to the first embodiment. [Figure 5] Figure 5 shows the configuration of the EUV light generation apparatus shown in Figure 4. [Figure 6] Figure 6 shows the configuration of an EUV light generation system according to a first modification of the first embodiment. [Figure 7] Figure 7 shows the configuration of the EUV light generation apparatus shown in Figure 6. [Figure 8] Figure 8 shows the configuration of an EUV light generation system according to a second modification of the first embodiment. [Figure 9] Figure 9 shows the configuration of the EUV light generation apparatus shown in Figure 8. [Figure 10] Figure 10 shows the configuration of the EUV light generation apparatus according to the second embodiment. [Figure 11] Figure 11 shows the configuration of the EUV light generation apparatus according to the third embodiment. [Figure 12] Figure 12 shows the configuration of the exposure apparatus connected to the EUV light generation system. [Figure 13] Figure 13 shows the configuration of the inspection device connected to the EUV light generation system. Embodiment

[0009] <Contents> 1. Overall description of the EUV light generation system 11 1.1 Configuration 1.2 Operation 2. Comparative Example 2.1 Configuration 2.2 Operation 2.3 Challenges of the Comparative Example 3. Partition 37b is an EUV light generator 1b including a heater. 3.1 Configuration 3.2 Operation 3.3 Effect 4. EUV light generator 1c including shutter 35c instead of gate valve 35b. 4.1 Configuration and Operation 4.2 Effect 5. EUV light generation device 1d in which the gate valve 35d includes a heater 5.1 Structure and operation 5.2 Function 6. EUV light generation device 1e in which the gate valve 36e is arranged at the target passage port 373 6.1 Structure and operation 6.2 Function 7. EUV light generation device 1f in which the gate valve 36e is arranged at the target passage port 373 and the gate valve 35f is arranged at the EUV passage port 372 7.1 Structure and operation 7.2 Function 8. Others 8.1 Examples of the EUV light utilization device 6 8.2 Supplementary remarks

[0010] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments described below show some examples of the present disclosure and do not limit the content of the present disclosure. Also, not all of the structures and operations described in each embodiment are essential as the structures and operations of the present disclosure. In addition, the same reference numerals are assigned to the same components, and duplicate explanations are omitted.

[0011] 1. Overall description of the EUV light generation system 11 1.1 Structure Fig. 1 shows the structure of an LPP-type EUV light generation system 11. The EUV light generation device 1 is used together with a laser device 3. In the present disclosure, a system including the EUV light generation device 1 and the laser device 3 is referred to as an EUV light generation system 11. The EUV light generation device 1 includes a chamber 2 and a target supply unit 26. The chamber 2 is a hermetically sealable container. The target supply unit 26 supplies a target substance-containing target 27 into the chamber 2. The material of the target substance may include tin, terbium, gadolinium, lithium, xenon, or any combination of two or more of them.

[0012] The wall of chamber 2 is provided with a through-hole. This through-hole is covered by a window 21, through which pulsed laser light 32 output from the laser device 3 passes. Inside chamber 2, an EUV focusing mirror 23 with a spheroidal reflective surface is positioned. The EUV focusing mirror 23 has a first and a second focal point. A multilayer reflective film is formed on the surface of the EUV focusing mirror 23, in which molybdenum and silicon are alternately layered. The EUV focusing mirror 23 is positioned such that its first focal point is located in the plasma generation region 25 and its second focal point is located in the intermediate focal point 292. A through-hole 24 is provided in the center of the EUV focusing mirror 23, through which pulsed laser light 33 passes.

[0013] The EUV light generator 1 includes a processor 5, a target sensor 4, and the like. The target sensor 4 detects at least one of the following: the presence, trajectory, position, and velocity of the target 27. The target sensor 4 may also have an imaging function.

[0014] Furthermore, the EUV light generation device 1 includes a connecting section 29 that connects the inside of the chamber 2 to the inside of the EUV light utilization device 6. The EUV light utilization device 6 may be the exposure device 6a shown in Figure 12 or the inspection device 6b shown in Figure 13. Inside the connecting section 29, there is a wall 291 with an aperture formed therein. The wall 291 is positioned such that its aperture is located at the second focal point of the EUV focusing mirror 23.

[0015] Furthermore, the EUV light generation device 1 includes a laser light transmission device 34, a laser light focusing mirror 22, a target retrieval unit 28 for retrieving the target 27, and the like. The laser light transmission device 34 includes an optical element for defining the transmission state of the pulsed laser light 32, and an actuator for adjusting the position, orientation, etc., of this optical element.

[0016] 1.2 Operation Referring to Figure 1, the operation of the EUV light generation system 11 will be explained. The pulsed laser light 31 output from the laser device 3 passes through the laser light transmission device 34 and enters the chamber 2 as pulsed laser light 32, passing through the window 21. The pulsed laser light 32 travels through the chamber 2 along the laser light path, is reflected by the laser light focusing mirror 22, and is irradiated onto the target 27 as pulsed laser light 33.

[0017] The target supply unit 26 outputs the target 27 toward the plasma generation region 25 inside the chamber 2. The target 27 is irradiated with pulsed laser light 33. The target 27, irradiated with pulsed laser light 33, becomes plasma, and synchrotron radiation 251 is emitted from the plasma. The EUV light contained in the synchrotron radiation 251 is reflected by the EUV focusing mirror 23 with a higher reflectivity than light in other wavelength ranges. The reflected light 252, which includes the EUV light reflected by the EUV focusing mirror 23, is focused at an intermediate focusing point 292 and output to the EUV light utilization device 6.

[0018] Multiple pulses contained in the pulsed laser light 33 may be irradiated onto a single target 27. In this case, for example, the laser device 3 includes a pre-pulse laser and a main-pulse laser (not shown). The pre-pulse laser light output from the pre-pulse laser has lower energy than the main-pulse laser light output from the main-pulse laser. The target 27 is diffused by irradiation with the pre-pulse laser light. The diffused target 27 is then turned into plasma by irradiation with the main-pulse laser light.

[0019] The processor 5 controls the entire EUV light generation system 11. The processor 5 processes the detection results from the target sensor 4. Based on the detection results from the target sensor 4, the processor 5 controls the timing of the output of the target 27, the output direction of the target 27, etc. Furthermore, the processor 5 controls the oscillation timing of the laser device 3, the direction of propagation of the pulsed laser light 32, the focusing position of the pulsed laser light 33, etc. The various controls described above are merely examples, and other controls may be added as needed.

[0020] 2. Comparative Example 2.1 Configuration Figure 2 shows the configuration of an EUV light generation system 11a according to a comparative example, and Figure 3 shows the configuration of an EUV light generation apparatus 1a shown in Figure 2. The comparative examples in this disclosure are forms that the applicant recognizes as being known only to the applicant, and are not known examples acknowledged by the applicant. Figures 2 and 3 show the X, Y, and Z directions perpendicular to each other. Figure 2 is a view of the EUV light generation system 11a in the Y direction, and Figure 3 is a view of the EUV light generation apparatus 1a in the Z direction. The Y direction is the direction of gravity, and the Z direction is the direction of incidence of pulsed laser light 33 to the plasma generation region 25. The EUV light generation apparatus 1a includes a chamber 2a and a partition wall 37.

[0021] Chamber 2a has a substantially cylindrical shape that surrounds the first space 20a. The central axis of the cylinder is parallel to the Y direction, and the target supply unit 26 and the target retrieval unit 28 are positioned at the location of this central axis. The target retrieval unit 28 has a substantially cylindrical shape, and the central axis of the cylinder is parallel to the Y direction. The plasma generation region 25 is located between the target supply unit 26 and the target retrieval unit 28.

[0022] The partition wall 37 includes a roughly cylindrical portion that surrounds the second space 20b and penetrates the side of the chamber 2a. The central axis of the cylinder is parallel to the X direction, and the plasma generation region 25 is located at the position of this central axis. Part of the partition wall 37 is located inside the chamber 2a, covering the plasma generation region 25 and connected to the target recovery unit 28. The other part of the partition wall 37 is located outside the chamber 2a and connected to the exhaust device 30. Stainless steel or molybdenum is used as the material for the partition wall 37.

[0023] Inside the chamber 2a, the partition wall 37 has a plurality of through-holes connecting the first space 20a and the second space 20b. The plurality of through-holes include an EUV through-hole 371, a target through-hole 374, a laser through-hole 375, and an through-hole for a sensor (not shown). The EUV through-hole 371 is an example of a first opening in this disclosure.

[0024] Chamber 2a is connected to a gas supply device (not shown) that supplies gas to the first space 20a. The supplied gas is, for example, hydrogen gas.

[0025] The EUV focusing mirror 23a is located inside the first space 20a and outside the second space 20b. The EUV port 371 is located in the optical path of the synchrotron radiation 251 that is generated in the plasma generation region 25 and heads toward the EUV focusing mirror 23a. The EUV focusing mirror 23a is positioned such that the central axis of the optical path of the reflected light 252 is inclined with respect to the central axis of the optical path of the synchrotron radiation 251.

[0026] 2.2 Operation The pulsed laser light 33 output from the laser device 3 is guided to the plasma generation region 25 by passing through the window 21 and the laser passage opening 375.

[0027] The targets 27 output from the target supply unit 26 located outside the second space 20b pass through the target passage port 374 and are supplied to the plasma generation region 25. Of the multiple targets 27, those that were not irradiated with pulsed laser light 33 and did not become plasma pass through the plasma generation region 25 and reach the target retrieval unit 28.

[0028] The target 27, irradiated with pulsed laser light 33, becomes plasma, and synchrotron radiation 251 is emitted from the plasma. The EUV focusing mirror 23a reflects the synchrotron radiation 251 that has passed through the EUV port 371, and focuses the reflected light 252, which includes EUV light, at an intermediate focusing point 292.

[0029] The exhaust device 30 exhausts the gas from the second space 20b to the outside of the partition wall 37 and the outside of the chamber 2a. This maintains a pressure in the second space 20b lower than the pressure in the first space 20a. As a result, gas flows from the first space 20a to the second space 20b at the EUV passage port 371, the target passage port 374, and the laser passage port 375. This suppresses the movement of target material from the second space 20b to the first space 20a, and prevents target material debris from adhering to components such as the EUV focusing mirror 23a, the target supply unit 26, and the window 21.

[0030] 2.3 Challenges of the Comparative Example Inside the partition wall 37, there are many ions, gases, and particles of the target material emitted from the plasma generation region 25. Some of these ions, gases, and particles accumulate on the inner surface of the partition wall 37 as target material debris 27a. As the accumulation of debris 27a progresses, it can obstruct the optical path of the pulsed laser beam 33 or alter the gas flow inside the partition wall 37, hindering smooth exhaust.

[0031] The embodiments described below relate to melting and removing target material debris 27a deposited on the inner surface of the partition wall 37.

[0032] 3. Partition 37b is an EUV light generator 1b including a heater. 3.1 Configuration Figure 4 shows the configuration of the EUV light generation system 11b according to the first embodiment, and Figure 5 shows the configuration of the EUV light generation device 1b shown in Figure 4. Figure 4 is a view of the EUV light generation system 11b in the Y direction, and Figure 5 is a view of the EUV light generation device 1b in the Z direction.

[0033] Instead of the partition wall 37 in the comparative example, the first embodiment has a partition wall 37b that includes a heater. A heater power supply 39 is connected to the partition wall 37b. A temperature sensor (not shown) is placed in the partition wall 37b, and the processor 5 (see Figure 1) controls the heater power supply 39 based on the output of the temperature sensor. The combination of the heater included in the partition wall 37b and the heater power supply 39 is an example of a temperature controller in this disclosure. The heater may be an electric heating wire or an induction heating coil.

[0034] A gate valve 35b is positioned at the EUV passage 371 of the partition wall 37b. The gate valve 35b is configured to be switchable between a first state in which the EUV passage 371 is open and a second state in which the EUV passage 371 is sealed, and this switching operation is controlled by the processor 5. The gate valve 35b is an example of a first switch in this disclosure.

[0035] In the comparative example, the partition wall 37 is a substantially cylindrical shape with a central axis parallel to the X direction, whereas it is preferable that the central axis of the partition wall 37b is inclined downward from the connection point with the exhaust device 30 toward the connection point with the target recovery unit 28. The partition wall 37b may be a tapered cylindrical shape, or for example, part of a cone. This creates a liquid flow path 38 that is inclined downward toward the connection point with the target recovery unit 28.

[0036] 3.2 Operation During the period when the target 27 is supplied from the target supply unit 26 and pulsed laser light 33 output from the laser device 3 is irradiated onto the target 27 to generate EUV light, the gate valve 35b is kept open, with the EUV passage opening 371 open.

[0037] After EUV light is generated for a predetermined period of time, or after a predetermined number of EUV pulses have been generated, or after a failure in EUV light generation, a failure in pulsed laser light 33 irradiation, or a failure in gas flow within the partition wall 37b is detected, or after the accumulation of attached debris 27a is detected by some sensor, the supply of target 27 and irradiation of pulsed laser light 33 are stopped, and the EUV passage opening 371 is sealed with gate valve 35b. Subsequently, the heater power supply 39 supplies current to the heater, heating the partition wall 37b to a temperature above the melting point of the target material and melting the attached debris 27a. The molten attached debris 27a is collected in the target recovery unit 28 by falling due to gravity or by flowing along the inner surface of the partition wall 37b.

[0038] The heating time for partition wall 37b is preferably between 1 and 5 hours, for example, around 3 hours. If the target material contains tin, the melting point of tin is approximately 232°C, so it is desirable that partition wall 37b be heated to a range of 250°C to 350°C. If the target material contains lithium, the melting point of lithium is approximately 180°C, so it is desirable that partition wall 37b be heated to a range of 200°C to 300°C.

[0039] Subsequently, the supply of current from the heater power supply 39 is stopped, and after the temperature of the partition wall 37b falls below the melting point of the target material, the gate valve 35b is opened to restart the generation of EUV light. In this way, the partition wall 37b is heated when the generation of EUV light is stopped.

[0040] 3.3 Effect (1) According to the first embodiment, the EUV light generator 1b comprises a chamber 2a, a partition wall 37b, a target supply unit 26, an EUV focusing mirror 23a, a target recovery unit 28, a heater and heater power supply 39, and a first switch such as a gate valve 35b. The chamber 2a surrounds the first space 20a. The partition wall 37b surrounds the second space 20b and has an EUV passage 371 that connects the first space 20a and the second space 20b. The target supply unit 26 supplies a target 27 containing target material to a plasma generation region 25 inside the second space 20b. The EUV focusing mirror 23a focuses the EUV light generated in the plasma generation region 25. The target recovery unit 28 recovers the target 27 that has passed through the plasma generation region 25 and the target material debris 27a attached to the inner surface of the partition wall 37b. The heater and heater power supply 39 heat the partition wall 37b. The first switch switches the opening and closing of the EUV passage opening 371.

[0041] According to this method, the debris 27a attached to the inner surface of the partition wall 37b can be melted by heating the partition wall 37b, and the molten debris 27a can be moved to the target recovery unit 28 by gravity. This can prevent the debris 27a attached to the inner surface of the partition wall 37b from obstructing the progress of the pulsed laser beam 33 or the gas flow. In addition, although droplets of the target material may scatter when the molten debris 27a falls, the contamination of components placed in the first space 20a can be prevented by closing the EUV passage opening 371. Furthermore, this method requires less work than disassembling the EUV light generator 1b and manually removing the debris 27a.

[0042] (2) According to the first embodiment, the target retrieval unit 28 is connected to a partition wall 37b, and the partition wall 37b is cylindrical in shape with its central axis inclined in the direction of gravity toward the connection part to which it is connected to the target retrieval unit 28.

[0043] According to this, since the partition wall 37b is inclined overall, the molten attached debris 27a can be efficiently guided to the target recovery section 28.

[0044] (3) According to the first embodiment, the target recovery unit 28 is connected to a partition wall 37b, and the partition wall 37b includes a liquid flow path 38 that is inclined in the direction of gravity toward the connection part connected to the target recovery unit 28.

[0045] According to this, the molten attached debris 27a can be smoothly guided to the target recovery section 28 via the liquid flow path 38.

[0046] (4) According to the first embodiment, the heater and heater power supply 39 heat the partition wall 37b for a period of 1 hour or more and 5 hours or less.

[0047] According to this, even if the molten, attached debris 27a has high viscosity, it can be removed from the inner surface of the partition wall 37b over a sufficient period of time.

[0048] (5) According to the first embodiment, the target material contains tin, and the heater and heater power supply 39 heat the partition wall 37b to a range of 250°C to 350°C.

[0049] According to this, the attached debris 27a can be removed by heating it to a temperature above the melting point of tin.

[0050] (6) According to the first embodiment, the target material contains lithium, and the heater and heater power supply 39 heat the partition wall 37b to a range of 200°C to 300°C.

[0051] According to this, the attached debris 27a can be removed by heating it to a temperature above the melting point of lithium.

[0052] (7) According to the first embodiment, the heater and heater power supply 39 heat the partition wall 37b after the EUV passage opening 371 is closed.

[0053] According to this, since the attached debris 27a is melted after the EUV passage opening 371 is closed, contamination of the components placed in the first space 20a can be suppressed.

[0054] (8) According to the first embodiment, the EUV port 371 is opened after heating of the partition wall 37b by the heater and heater power supply 39 has stopped and the partition wall 37b has reached a temperature below the melting point of the target material.

[0055] According to this, even if some of the attached debris 27a remains on the inner surface of the partition wall 37b after heating, the generation of droplets can be suppressed by opening the EUV passage port 371 after the temperature has fallen below the melting point of the target material.

[0056] (9) According to the first embodiment, the heater and heater power supply 39 heat the partition wall 37b when the generation of EUV light is stopped.

[0057] According to this, even if there are constraints on the operation of the heater power supply 39 and the first switch during the generation of EUV light, these constraints can be alleviated by stopping the generation of EUV light, and the removal of the attached debris 27a can be carried out smoothly.

[0058] (10) According to the first embodiment, the EUV focusing mirror 23a is located inside the first space 20a and outside the second space 20b, and focuses the EUV light that has passed through the EUV opening 371.

[0059] According to this, when the EUV opening 371 is closed, the adhesion of the target material to the EUV focusing mirror 23a is suppressed, and the decrease in the reflectivity of the EUV focusing mirror 23a is suppressed.

[0060] (11) According to the first embodiment, the first switch includes a gate valve 35b that seals the EUV passage 371.

[0061] According to this, even if a portion of the molten target substance vaporizes, it is possible to suppress the flow of the target substance into the first space 20a.

[0062] In all other respects, the first embodiment is the same as the comparative example.

[0063] 4. EUV light generator 1c including shutter 35c instead of gate valve 35b. 4.1 Configuration and Operation Figure 6 shows the configuration of the EUV light generation system 11c according to the first modification of the first embodiment, and Figure 7 shows the configuration of the EUV light generation device 1c shown in Figure 6. Figure 6 is a view of the EUV light generation system 11c in the Y direction, and Figure 7 is a view of the EUV light generation device 1c in the Z direction.

[0064] In the first modification, instead of the gate valve 35b in the first embodiment, a shutter 35c is provided. The shutter 35c does not provide a seal like the gate valve 35b, but rather closes the EUV passage opening 371 by being positioned near the EUV passage opening 371, and opens the EUV passage opening 371 by moving away from the optical path of the synchrotron radiation 251 passing through the EUV passage opening 371. The opening and closing mechanism of the shutter 35c can be a simple configuration using a motor or solenoid (not shown), and the shutter 35c may be opened and closed by translating in a direction intersecting the central axis of the optical path of the synchrotron radiation 251, or by rotating around a rotation axis.

[0065] 4.2 Effect (12) According to the first modification, the first switch includes a shutter 35c located near the EUV passage 371.

[0066] According to this, even if the first switch does not have a complex structure, the EUV passage opening 371 can be closed, and contamination of components in the first space 20a can be suppressed.

[0067] In all other respects, the first modification is the same as that of the first embodiment.

[0068] 5. Gate valve 35d is included in the EUV light generator 1d, which includes a heater. 5.1 Configuration and Operation Figure 8 shows the configuration of the EUV light generation system 11d according to a second modification of the first embodiment, and Figure 9 shows the configuration of the EUV light generation device 1d shown in Figure 8. Figure 8 is a view of the EUV light generation system 11d in the Y direction, and Figure 9 is a view of the EUV light generation device 1d in the Z direction.

[0069] In the second modification, instead of the gate valve 35b in the first embodiment, a gate valve 35d including a heater is provided. The gate valve 35d is a heat-resistant gate valve that can withstand temperatures above the melting point of the target material. The heater power supply 39 is connected not only to the partition wall 37b but also to the gate valve 35d. The heater included in the partition wall 37b corresponds to the first heater in this disclosure, and the heater included in the gate valve 35d corresponds to the second heater in this disclosure. The combination of the first and second heaters and the heater power supply 39 is an example of a temperature controller in this disclosure. The timing of the start and end of heating of the gate valve 35d may be simultaneous with that of the partition wall 37b.

[0070] 5.2 Effect (13) According to the second modification, the heater includes a first heater for heating the partition wall 37b and a second heater for heating a first switch such as a gate valve 35d.

[0071] According to this, by heating not only the partition wall 37b but also the first switch, it is possible to suppress the adhesion of the target substance to the first switch, which would otherwise prevent it from opening and closing.

[0072] In other respects, the second modification is the same as the first embodiment. Alternatively, the shutter 35c in the first modification may include a heater.

[0073] 6. EUV light generator 1e with gate valve 36e positioned at target passage opening 373 6.1 Configuration and Operation Figure 10 shows the configuration of the EUV photogenerator 1e according to the second embodiment. Figure 10 is a view of the EUV photogenerator 1e in the Z direction. In the first embodiment, a gate valve 35b is located at the EUV passage 371, whereas in the second embodiment, a gate valve 36e is located at the target passage 373. The gate valve 36e is configured to be switchable between a first state in which the target passage 373 is open and a second state in which the target passage 373 is sealed, and this switching operation is controlled by the processor 5. The target passage 373 is an example of the first opening in this disclosure, and its configuration is the same as that of the target passage 374. The gate valve 36e is an example of the first switch in this disclosure. The timing of opening and closing of the gate valve 36e may be the same as that of the gate valve 35b. The EUV passage 372 corresponds to the second opening in this disclosure, and its configuration is the same as that of the EUV passage 371. A gate valve 35b does not necessarily need to be placed in the EUV passage 372.

[0074] 6.2 Effect (14) According to the second embodiment, the target supply unit 26 is located outside the second space 20b and supplies the target 27 to the plasma generation region 25 through the target passage port 373.

[0075] According to this, when the target passage opening 373 is closed, the adhesion of the target material to the target supply unit 26 is suppressed, and changes in the trajectory of the target 27 are suppressed.

[0076] (15) According to the second embodiment, the first switch includes a gate valve 36e that seals the target passage opening 373.

[0077] According to this, even if a portion of the molten target substance vaporizes, it is possible to suppress the flow of the target substance into the first space 20a.

[0078] (16) According to the second embodiment, the first switch, as described below, includes a shutter located near the target passage opening 373.

[0079] According to this, the target passage opening 373 can be closed even if the first switch does not have a complex structure, and contamination of the components in the first space 20a can be suppressed.

[0080] (17) According to the second embodiment, as described below, the heater includes a first heater for heating the partition wall 37b and a second heater for heating a first switch such as a gate valve 36e or a shutter.

[0081] According to this, by heating not only the partition wall 37b but also the first switch, it is possible to suppress the adhesion of the target substance to the first switch, which would otherwise prevent it from opening and closing.

[0082] In other respects, the second embodiment is the same as the first embodiment. Alternatively, as with the first modification, a shutter may be placed near the target passage opening 373 instead of the gate valve 36e, or as with the second modification, the gate valve 36e may include a heater, or the shutter may include a heater.

[0083] 7. EUV light generator 1f, in which gate valve 36e is positioned at target passage port 373 and gate valve 35f is positioned at EUV passage port 372. 7.1 Configuration and Operation Figure 11 shows the configuration of the EUV light generator 1f according to the third embodiment. Figure 11 is a view of the EUV light generator 1f in the Z direction. In the third embodiment, a gate valve 35f is also provided at the EUV port 372. The gate valve 35f is configured to be switchable between a first state in which the EUV port 372 is open and a second state in which the EUV port 372 is sealed, and this switching operation is controlled by the processor 5. The gate valve 35f corresponds to the second switch in this disclosure. The timing of opening and closing the gate valve 35f may be the same as that of the gate valve 36e.

[0084] 7.2 Effect (18) According to the third embodiment, the partition wall 37b has an EUV passage opening 372 that connects the first space 20a and the second space 20b. The EUV focusing mirror 23a is located inside the first space 20a and outside the second space 20b, and focuses the EUV light that has passed through the EUV passage opening 372. The EUV light generating device 1f includes a second switch, such as a gate valve 35f, which switches the opening and closing of the EUV passage opening 372.

[0085] According to this, contamination of both the target supply unit 26 and the EUV focusing mirror 23a can be suppressed.

[0086] In other respects, the third embodiment is the same as the second embodiment. Alternatively, as with the first modification, a shutter may be used instead of the gate valve 36e or gate valve 35f, or as with the second modification, the gate valve 36e or gate valve 35f may include a heater, or the shutter may include a heater.

[0087] In any of the first to third embodiments and the first and second modifications, a gate valve or shutter may be placed in the laser passage 375 or the through-hole for the sensor, and the gate valve or shutter may include a heater.

[0088] 8. Other 8.1 Example of EUV light utilization device 6 Figure 12 shows the configuration of the exposure apparatus 6a connected to the EUV light generation system 11b. In Figure 12, the exposure apparatus 6a, as the EUV light utilization apparatus 6 (see Figure 1), includes a mask irradiation unit 608 and a workpiece irradiation unit 609. The mask irradiation unit 608 illuminates the mask pattern on the mask table MT via a reflective optical system using EUV light incident from the EUV light generation system 11b. The workpiece irradiation unit 609 images the EUV light reflected by the mask table MT onto a workpiece (not shown) placed on the workpiece table WT via a reflective optical system. The workpiece is a photosensitive substrate such as a semiconductor wafer coated with photoresist. The exposure apparatus 6a exposes the workpiece to EUV light reflecting the mask pattern by synchronously moving the mask table MT and the workpiece table WT in parallel. By transferring a device pattern onto a semiconductor wafer through this exposure process, an electronic device can be manufactured.

[0089] Figure 13 shows the configuration of the inspection device 6b connected to the EUV light generation system 11b. In Figure 13, the inspection device 6b, as the EUV light utilization device 6 (see Figure 1), includes an illumination optical system 603 and a detection optical system 606. The illumination optical system 603 reflects the EUV light incident from the EUV light generation system 11b and irradiates the mask 605 placed on the mask stage 604. The mask 605 here includes mask blanks before a pattern is formed. The detection optical system 606 reflects the EUV light from the illuminated mask 605 and forms an image on the light-receiving surface of the detector 607. The detector 607, having received the EUV light, acquires an image of the mask 605. The detector 607 is, for example, a TDI (time delay integration) camera. Based on the image of the mask 605 acquired through the above process, defects in the mask 605 are inspected, and the results of the inspection are used to select a mask suitable for the manufacture of electronic devices. Then, the pattern formed on the selected mask can be exposed and transferred onto a photosensitive substrate using the exposure apparatus 6a to manufacture an electronic device.

[0090] Figures 12 and 13 show the EUV light generation system 11b according to the first embodiment, but an EUV light generation system 11c or 11d according to the first or second modification may be used, or an EUV light generation system including an EUV light generation device 1e or 1f according to the second or third embodiment may be used.

[0091] 8.2 Supplement The above description is intended to be illustrative, not restrictive. Therefore, it will be apparent to those skilled in the art that modifications can be made to the embodiments of this disclosure without departing from the claims. It will also be apparent to those skilled in the art that the embodiments of this disclosure can be used in combination.

[0092] Terms used throughout this specification and the claims should be interpreted as "non-limiting" unless otherwise specified. For example, terms such as "includes," "have," "equip," and "possess" should be interpreted as "not excluding the existence of components other than those described." Also, the modifier "one" should be interpreted as "at least one" or "one or more." Furthermore, the term "at least one of A, B, and C" should be interpreted as "A," "B," "C," "A+B," "A+C," "B+C," or "A+B+C," and should also be interpreted as including combinations of these with anything other than "A," "B," and "C."

Claims

1. The chamber surrounding the first space, A partition wall enclosing the second space and having a first opening that connects the first space and the second space, A target supply unit that supplies a target containing a target material to a plasma generation region inside the second space, An EUV focusing mirror that focuses the extreme ultraviolet light generated in the plasma generation region, A target recovery unit for recovering the target material debris that has adhered to the inner surface of the target and the partition wall after passing through the plasma generation region, A temperature controller for heating the aforementioned partition wall, A first switch for switching the opening and closing of the first opening, An extreme ultraviolet light generating device equipped with [a specific feature].

2. An extreme ultraviolet light generating apparatus according to claim 1, The target retrieval unit is connected to the partition wall, The partition wall is cylindrical in shape, with its central axis inclined in the direction of gravity toward the connection part connected to the target retrieval unit. Extreme ultraviolet light generator.

3. An extreme ultraviolet light generating apparatus according to claim 1, The target retrieval unit is connected to the partition wall, The partition wall includes a liquid channel that is inclined in the direction of gravity toward the connection part connected to the target recovery unit. Extreme ultraviolet light generator.

4. An extreme ultraviolet light generating apparatus according to claim 1, The temperature controller heats the partition wall for a period of time of 1 hour or more and 5 hours or less. Extreme ultraviolet light generator.

5. An extreme ultraviolet light generating apparatus according to claim 1, The target material contains tin, and the temperature controller heats the partition wall to a range of 250°C to 350°C. Extreme ultraviolet light generator.

6. An extreme ultraviolet light generating apparatus according to claim 1, The target material contains lithium, and the temperature controller heats the partition wall to a range of 200°C to 300°C. Extreme ultraviolet light generator.

7. An extreme ultraviolet light generating apparatus according to claim 1, The temperature controller heats the partition wall after the first opening is closed. Extreme ultraviolet light generator.

8. An extreme ultraviolet light generating apparatus according to claim 1, The first opening is opened after the heating of the partition wall by the temperature controller has stopped and the partition wall has reached a temperature below the melting point of the target substance. Extreme ultraviolet light generator.

9. An extreme ultraviolet light generating apparatus according to claim 1, The temperature controller heats the partition when the generation of extreme ultraviolet light is stopped. Extreme ultraviolet light generator.

10. An extreme ultraviolet light generating apparatus according to claim 1, The EUV focusing mirror is located inside the first space and outside the second space, and focuses the extreme ultraviolet light that has passed through the first aperture. Extreme ultraviolet light generator.

11. An extreme ultraviolet light generating apparatus according to claim 10, The first switch includes a gate valve that seals the first opening. Extreme ultraviolet light generator.

12. An extreme ultraviolet light generating apparatus according to claim 10, The first switch includes a shutter positioned near the first opening. Extreme ultraviolet light generator.

13. An extreme ultraviolet light generating apparatus according to claim 10, The temperature controller includes a first heater for heating the partition wall and a second heater for heating the first switch. Extreme ultraviolet light generator.

14. An extreme ultraviolet light generating apparatus according to claim 1, The target supply unit is located outside the second space and supplies the target to the plasma generation region through the first opening. Extreme ultraviolet light generator.

15. An extreme ultraviolet light generating apparatus according to claim 14, The first switch includes a gate valve that seals the first opening. Extreme ultraviolet light generator.

16. An extreme ultraviolet light generating apparatus according to claim 14, The first switch includes a shutter positioned near the first opening. Extreme ultraviolet light generator.

17. An extreme ultraviolet light generating apparatus according to claim 14, The temperature controller includes a first heater for heating the partition wall and a second heater for heating the first switch. Extreme ultraviolet light generator.

18. An extreme ultraviolet light generating apparatus according to claim 14, The partition wall further has a second opening that connects the first space and the second space, The EUV focusing mirror is located inside the first space and outside the second space, and focuses the extreme ultraviolet light that has passed through the second aperture. The extreme ultraviolet light generating device further comprises a second switch for switching the opening and closing of the second aperture. Extreme ultraviolet light generator.

19. A method for manufacturing electronic devices, The chamber surrounding the first space, A partition wall enclosing the second space and having a first opening that connects the first space and the second space, A target supply unit that supplies a target containing a target material to a plasma generation region inside the second space, An EUV focusing mirror that focuses the extreme ultraviolet light generated in the plasma generation region, A target recovery unit for recovering the target material debris that has adhered to the inner surface of the target and the partition wall after passing through the plasma generation region, A temperature controller for heating the aforementioned partition wall, A first switch for switching the opening and closing of the first opening, The extreme ultraviolet light is generated by an extreme ultraviolet light generating device equipped with the following: The aforementioned extreme ultraviolet light is output to the exposure device, In order to manufacture an electronic device, the photosensitive substrate is exposed to the extreme ultraviolet light in the exposure apparatus. A method for manufacturing electronic devices, including the following.

20. A method for manufacturing electronic devices, The chamber surrounding the first space, A partition wall enclosing the second space and having a first opening that connects the first space and the second space, A target supply unit that supplies a target containing a target material to a plasma generation region inside the second space, An EUV focusing mirror that focuses the extreme ultraviolet light generated in the plasma generation region, A target recovery unit for recovering the target material debris that has adhered to the inner surface of the target and the partition wall after passing through the plasma generation region, A temperature controller for heating the aforementioned partition wall, A first switch for switching the opening and closing of the first opening, The extreme ultraviolet light generated by the extreme ultraviolet light generator is irradiated onto the mask in the inspection device to inspect for defects in the mask. Using the results of the above inspection, select a mask. The pattern formed on the selected mask is then exposed and transferred onto a photosensitive substrate. A method for manufacturing electronic devices, including the following.

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