Substrate processing apparatus, article manufacturing method

Abstract

A technology was expected to reduce the unevenness in the drying rate of the solvent contained in the solution film placed on the substrate compared to conventional methods. [Solution] A substrate processing apparatus comprising a container, a depressurization mechanism capable of reducing the pressure inside the container, a substrate holding part capable of holding a substrate having a film and positioned inside the container, a cover unit positioned inside the container so as to surround the upper part of the substrate held by the substrate holding part, and a connecting part connected to the cover unit and including a conduit that connects a second space surrounded by the cover unit and the substrate holding part to a gas analyzer, wherein the cover unit has an opening, and the first space and the second space outside the cover unit inside the container are in communication through the opening, and the connecting part is equipped with a suppression means to suppress gas from flowing out of the conduit into the second space.

Description

Technical Field

[0001] The present invention relates to a drying technique for a solution film disposed on a substrate.

Background Art

[0002] When manufacturing an article such as a display panel having an organic EL element (Organic Light Emitting Diode), a method of applying a solution film to a desired location on a substrate using an inkjet device or the like is known. The solution film is a film composed of a solution containing a solute and a solvent. By drying the solution film applied on the substrate, a film (layer) is formed on the substrate. For drying the solution film, a vacuum drying device, which is a substrate processing device, is used (for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] There has been an expectation for a technique that can reduce unevenness in the drying rate of the solvent contained in the solution film disposed on the substrate more than before.

Means for Solving the Problems

[0005] A first aspect of the present invention is a substrate processing apparatus comprising: a container; a depressurization mechanism capable of reducing the pressure inside the container; a substrate holding portion capable of holding a substrate having a film and disposed inside the container; a cover unit disposed inside the container so as to surround the upper part of the substrate held by the substrate holding portion; and a gas introduction portion connected to the cover unit and capable of supplying gas to a second space surrounded by the cover unit and the substrate holding portion, wherein the cover unit has an opening, and the first space outside the cover unit inside the container and the second space are in communication through the opening, and the gas introduction portion comprises a pipeline for supplying gas to the second space and a suppression means for suppressing gas from flowing out of the pipeline into the second space.

[0006] A second aspect of the present invention is a substrate processing apparatus comprising: a container; a depressurization mechanism capable of reducing the pressure inside the container; a substrate holding portion capable of holding a substrate having a membrane and disposed inside the container; a cover unit disposed inside the container so as to surround the upper part of the substrate held by the substrate holding portion; and a connecting portion connected to the cover unit and including a conduit for connecting a second space surrounded by the cover unit and the substrate holding portion to a gas analyzer, wherein the cover unit has an opening, and a first space outside the cover unit inside the container and the second space are in communication through the opening, and the connecting portion includes a suppression means for suppressing gas from flowing out of the conduit into the second space. [Effects of the Invention]

[0007] According to the present invention, the unevenness in the drying rate of the solvent contained in the solution film placed on the substrate is reduced. [Brief explanation of the drawing]

[0008] [Figure 1] A schematic cross-sectional view showing the configuration of a vacuum drying apparatus according to Embodiment 1. [Figure 2] (a) A top view of a part of the vacuum drying apparatus according to Embodiment 1. (b) A cross-sectional view of the cover unit of the vacuum drying apparatus according to Embodiment 1. [Figure 3] Flowchart of the method for manufacturing an article according to Embodiment 1. [Figure 4] A schematic partial cross-sectional view showing the connection between space SP2 and the gas inlet. [Figure 5] A partial cross-sectional view showing space SP2 and the connection point. [Figure 6] A graph showing an example of pressure control in the drying process according to Embodiment 1. [Figure 7] A schematic cross-sectional view showing the configuration of a vacuum drying apparatus according to Embodiment 2. [Figure 8] A graph showing an example of pressure control in the drying process according to Embodiment 2. [Figure 9] A schematic top view showing a portion of the vacuum drying apparatus according to Embodiment 3. [Figure 10] A schematic cross-sectional view showing the configuration of a conventional vacuum drying apparatus. [Figure 11] A graph showing an example of pressure control in a conventional vacuum drying apparatus. [Modes for carrying out the invention]

[0009] With reference to the drawings, a substrate processing apparatus, etc., according to an embodiment of the present invention will be described. The embodiments shown below are illustrative, and for example, those skilled in the art can modify the detailed configuration as appropriate without departing from the spirit of the present invention.

[0010] In the drawings referenced in the following description of embodiments, elements indicated by the same reference numeral have the same function unless otherwise specified. If multiple identical elements are shown in a drawing, the assignment of reference numerals and their descriptions may be omitted.

[0011] Furthermore, since drawings may be schematically represented for the convenience of illustration and explanation, the shape, size, and arrangement of elements shown in the drawings may not strictly correspond to those of actual objects. In addition, notations such as "XX or greater and YY or less" or "XX~YY" that indicate a numerical range mean a numerical range that includes the endpoints XX (lower limit) and YY (upper limit). When numerical ranges are described in steps, the upper and lower limits of each numerical range can be combined in any way.

[0012] Furthermore, unless otherwise specified, in the Cartesian coordinate system XYZ, the XY plane is the horizontal plane, and the negative Z-axis direction is the vertical direction (direction of gravity). In the following explanation, for example, when we write "X-plus direction," it refers to the same direction as the X-axis arrow in the illustrated Cartesian coordinate system, and when we write "X-minus direction," it refers to the direction 180 degrees opposite to the direction the X-axis arrow in the illustrated Cartesian coordinate system points to. Also, when we simply write "X direction," it refers to the direction parallel to the X-axis, regardless of whether it is the same as or different from the direction the X-axis arrow points to in the illustrated Cartesian coordinate system. The same applies to directions other than X.

[0013] Furthermore, the view of the substrate processing apparatus and substrate drying apparatus from a direction perpendicular to the main surface of the substrate S placed inside the apparatus (Z direction) is also referred to as a plan view.

[0014] Patent Document 1 discloses a vacuum drying apparatus, as shown in Figure 10, comprising a substrate holding section 20X inside an airtight container 10X, a cover unit 40X surrounding the sides and top of the substrate S held by the substrate holding section 20X, and a vacuum mechanism X for reducing the pressure inside the airtight container 10X. This apparatus includes a connection section 56X that connects the space SP2X enclosed by the cover unit 40X to a gas analyzer 55X. It also includes a gas introduction section 52X that introduces an inert gas into the space SP2X enclosed by the cover unit 40X via a valve 54X. Inside the airtight container 10X, the inner space and the outer space of the cover unit 40X are in communication through an opening 43X. Furthermore, in the process of vacuum drying a solution film applied to a substrate, the pressure inside the airtight container 10X is controlled as shown in the graph in Figure 11. In the apparatus described in Patent Document 1, in the period D1 in the graph of FIG. 11, the inside of the airtight container 10X is rapidly decompressed from atmospheric pressure to the first pressure P1. At this time, although the space inside the cover unit 40X is also decompressed through the opening 43X, since the valve 54X is closed, an inert gas is not actively introduced into the space SP2X. Further, since the gas analyzer 55X is not a device for supplying gas, gas is not actively introduced from the gas analyzer 55X into the space SP2X.

[0015] However, since the inside of the airtight container 10X was open to atmospheric pressure before the period D1, gas remains inside the pipes of the connection part 56X and the gas introduction part 52X at the start of the period D1. When decompression starts in the period D1, this residual gas flows into the cover unit 40X and passes near the solution film on the substrate. Then, it was found that in the solution film near the outlet of the pipe of the connection part 56X or the gas introduction part 52X, the way the solvent evaporates changes under the influence of the gas flow passing through, and unevenness in the drying rate may occur between the solution film far from the outlet.

[0016] Therefore, a technique that can reduce the unevenness in the drying rate of the solvent contained in the solution film disposed on the substrate more than before has been expected.

[0017] (Embodiment 1) FIG. 1 is a schematic cross-sectional view showing the configuration of a vacuum drying apparatus 100 as a substrate processing apparatus according to Embodiment 1. The vacuum drying apparatus 100 is used in a part of the process of manufacturing an organic EL panel including an OLED which is an organic EL element. That is, the vacuum drying apparatus 100 can form a thin film constituting an organic EL element on the substrate S by performing a drying process for drying the solution film F applied to the substrate S.

[0018] The solution film F is composed of, for example, a solution containing a solute and a solvent for forming an organic film. The solvent contained in the solution film F preferably has the property that evaporation is promoted in a reduced-pressure environment lower than atmospheric pressure. The evaporation of the solvent is preferably promoted, for example, at a temperature higher than normal temperature (25°C).

[0019] The solvent is preferably an organic solvent. The solvent contains at least one organic solvent. Examples of organic solvents include N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, diethylene glycol monomethyl ether, cyclohexanone, N,N-dimethylisobutylamide, N-methylformamide, N-methylacetamide, N-diethylformamide, cyclohexanol, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, 1,3-butanediol, and 1,4-butanediol. Examples include propylene glycol, hexylene glycol, propylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diacetone alcohol, γ-butyrolactone, ethyl lactate, N-hexyl acetate, and ethyl cellosolve acetate.

[0020] The organic film is an organic layer and may be, for example, a hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer of an OLED. The method for manufacturing an organic EL element includes the step of forming each of the organic films, the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer, on a substrate S. The solution film F is applied to the required locations on the substrate S by a coating device (not shown), such as an inkjet device, before the substrate S is brought into the vacuum drying device 100.

[0021] (Configuration of a vacuum drying apparatus) The vacuum drying apparatus 100 comprises an airtight container 10, a vacuum mechanism 30 capable of reducing the pressure inside the airtight container 10, and a substrate holding section 20 disposed inside the airtight container 10 and capable of holding a substrate S. The substrate holding section 20 has a planar region 21 on which the substrate S is placed. The region 21 is, for example, a horizontal plane, i.e., a plane parallel to the XY plane. The vacuum drying apparatus 100 also includes a cover unit 40 disposed inside the airtight container 10 so as to surround the substrate S held by the substrate holding section 20. The cover unit 40 is positioned so as not to come into contact with the solution film F on the substrate S held by the substrate holding section 20.

[0022] The pressure of the external environment of the airtight container 10 may be atmospheric pressure. The airtight container 10 is a member (chamber) that defines the internal space SP0. The internal space SP0 includes space SP2 surrounded by the cover unit 40 and space SP1 other than space SP2. In Embodiment 1, space SP2 is the space surrounded by the substrate holding part 20 and the cover unit 40. Space SP2 and space SP1 outside the cover unit 40 are in communication with each other through an opening 43. By surrounding the space above the substrate S with the cover unit 40, the uniformity of the pressure distribution within space SP2 is improved.

[0023] Furthermore, the vacuum drying apparatus 100 is equipped with an openable and closable gate valve 12 provided in the airtight container 10. Substrates S coated with the solution film F to be dried are transported from the external space of the airtight container 10 to the internal space SP0 through the gate valve 12. After the drying process, the substrates S are transported from the internal space SP0 to the external space through the gate valve 12. The transport of substrates S is carried out by a transport device RB located outside the airtight container 10.

[0024] The pressure reduction mechanism 30 includes one or more pumps. The pumps may be, for example, a dry pump, a diaphragm vacuum pump, a turbomolecular pump, a cryopump, a sorption pump, an oil diffusion pump, a mechanical booster pump, an ejector pump, or an oil rotary vacuum pump. The pressure reduction mechanism 30 is connected to an exhaust port 3001 provided in the airtight container 10 via a conduit 3002. The inside of the airtight container 10 is depressurized by the pressure reduction mechanism 30 via the exhaust port 3001 and the conduit 3002. A control valve (not shown) may also be placed in the conduit 3002.

[0025] Furthermore, the vacuum drying apparatus 100 is equipped with a pressure gauge 57 that detects the pressure in the internal space SP0 of the airtight container 10, and the detection result is transmitted to the control device 90.

[0026] The vacuum drying apparatus 100 further includes a temperature control unit 70 that controls the temperature of the substrate holding unit 20. The temperature control unit 70 controls the temperature of the substrate S or the solution film F on the substrate S via the substrate holding unit 20. The temperature control unit 70 may include a heater for heating the substrate holding unit 20. The temperature control unit 70 may also include a cooler for cooling the substrate holding unit 20. The temperature control unit 70 controls the temperature of the substrate holding unit 20 by heating and / or cooling the substrate holding unit 20.

[0027] The temperature control unit 70 can control multiple regions of the substrate holding unit 20 to the same temperature or different temperatures from each other so that the substrate S has a uniform temperature distribution. Preferably, the temperature control unit 70 controls the temperature so that the temperature difference between multiple regions of the substrate S held by the substrate holding unit 20 is within 10 degrees. More preferably, the temperature control unit 70 controls the temperature so that the temperature difference between multiple regions of the substrate S held by the substrate holding unit 20 is within 5 degrees. The temperature control unit 70 controls the temperature of the substrate holding unit 20 so that the temperature of the substrate S is within a predetermined range of 0 to 100 degrees. By setting the temperature of the substrate holding unit 20 higher, the drying rate of the solution film F applied on the substrate S can be improved.

[0028] The cover unit 40 is positioned on the substrate holding portion 20. The cover unit 40 comprises a base unit 400 which is the main body and an inner surface 401 of the base unit 400, and a liquid-repellent member 402, which is a liquid-repellent film, may be placed on at least a part of the inner surface 401. The liquid-repellent member 402 is a member that has the property of repelling the organic solvents described above.

[0029] The main material for the base unit 400 is preferably metal, such as stainless steel. Preferably, the stainless steel is an austenitic stainless steel containing 0.045% or less phosphorus and 0.030% or less sulfur (i.e., stainless steel specified as SUS304 in the Japanese Industrial Standards: JIS).

[0030] Figure 2(a) is a top view of a part of the vacuum drying apparatus 100 according to Embodiment 1. Figure 2(a) shows a top view of the cover unit 40 as viewed along the Z-minus direction. Figure 2(b) is a cross-sectional view showing a cross-section of the cover unit 40 of the vacuum drying apparatus 100 according to Embodiment 1, cut along the Y direction. The cover unit 40 includes an enclosure wall 41 (wall member) and a cover member 42. The enclosure wall 41 faces and surrounds the side surface SS of the substrate S placed on the substrate holding section 20. The cover member 42 may be integrated with the enclosure wall 41 or may be separate from the enclosure wall 41. If the cover member 42 is separate from the enclosure wall 41, the cover member 42 may be movable in the Z direction, which is vertical relative to the enclosure wall 41, i.e., the substrate holding section 20.

[0031] Furthermore, as shown in Figure 1, the vacuum drying apparatus 100 includes a gas introduction section 51 for introducing an inert gas into space SP1, and a gas introduction section 52 capable of supplying an inert gas to space SP2. The gas introduction sections 51 and 52 are preferably made of flexible tubes, for example. A valve 53 is provided in the gas introduction section 51. A valve 54 is provided in the gas introduction section 52.

[0032] The gas inlet 51 is provided through the airtight container 10 and can supply, for example, an inert gas to the space SP1. The gas inlet 52 is provided through the airtight container 10 and the enclosure wall 41 of the cover unit 40 and is configured to supply an inert gas to the space SP2.

[0033] An inert gas is, for example, nitrogen. In Embodiment 1, it is preferable that the gas supplied to the inside of the airtight container 10 from the gas inlet 51 and gas inlet 52 is an inert gas. However, any gas with a different composition from the solvent of the solution film F may be used, such as clean dry air.

[0034] By supplying gas to space SP1 via the gas inlet 51, the pressure in the internal space SP0 of the airtight container 10, and more directly, the pressure in space SP1, is adjusted. Similarly, by supplying gas to space SP2 via the gas inlet 52, the pressure in the internal space PS0 of the airtight container 10, and more directly, the pressure in space SP2, is adjusted.

[0035] The vacuum drying apparatus 100 may also further include a gas analyzer 55 for detecting gases present in the space SP2. The gases in space SP2 are introduced into the gas analyzer 55 via a connection 56. The gas analyzer 55 is, for example, a residual gas analyzer (RGA), such as a mass spectrometer, and the detection results are transmitted to the control device 90. The gas analyzer 55 can detect specific gases, namely the solvent gases evaporating from the solution film F of the substrate S. The connection 56 may be a flexible tube, such as a fiberglass tube, or a bellows.

[0036] Preferably, at least a portion of the inner and outer walls of the connecting portion 56 is liquid-repellent. For example, it is preferable to provide a liquid-repellent film on at least a portion of the surface of the inner and outer walls of the connecting portion 56. This is because if at least a portion of the surface of the inner and outer walls of the connecting portion 56 is liquid-repellent, the solvent gas evaporating from the solution film F will be less likely to adsorb onto the surface of the connecting portion 56, thereby improving the detection accuracy of the gas in the space SP2 by the gas analyzer 55. More preferably, the entire surface of the inner and outer walls of the connecting portion 56 is given liquid-repellent properties. In that case, the connecting portion 56 can be formed from a liquid-repellent material, such as a fluororesin, which has the property of repelling organic solvents. The method for providing a liquid-repellent film on the surface of the inner and outer walls of the connecting portion 56 is not particularly limited, and examples include the dip method and the spray coating method.

[0037] The enclosure wall 41, which constitutes part of the cover unit 40, is a wall member extending in the Z direction. When the vacuum drying apparatus 100 is viewed from above, the enclosure wall 41 is positioned around the substrate S placed on the region 21, that is, to the side of the region 21. The enclosure wall 41 has an opening 47 for loading and unloading the substrate S. The opening 47 is opened and closed by a shutter 48. The shutter 48 is a mechanical shutter and opens and closes the opening 47 by being driven up and down. In the drying process described later, the shutter 48 is moved to a position that closes the opening 47. The enclosure wall 41 is erected on the substrate holding part 20, but is not limited to this, and may be erected on another member. In some cases, the enclosure wall 41 may be formed in a shape that surrounds the area on the main surface MS of the substrate S where a solution film F is formed and in contact with the substrate S.

[0038] Furthermore, as a method to prevent interference with the cover unit 40 when loading and unloading the substrate S, instead of providing an opening 47 and a shutter 48, a cover unit movement mechanism (not shown) that retracts the entire cover unit 40 in the Z direction may be provided.

[0039] The enclosure wall 41 has an inner wall surface 414 as the wall surface on the substrate S side, and an outer wall surface 415 on the back side of the inner wall surface 414. The enclosure wall 41 may have a liquid-repellent member 412 on part or all of the inner wall surface 414. In other words, the enclosure wall 41 has a base member 411 which is the wall body, and a liquid-repellent member 412 disposed on the inner surface 4110 of the base member 411. That is, the liquid-repellent member 412 is a liquid-repellent film coated on the inner surface 4110.

[0040] The cover member 42, which constitutes part of the cover unit 40, is positioned opposite the main surface (substrate main surface) MS of the substrate S placed on the region 21. Specifically, the cover member 42 is positioned opposite the solution film F coated on the main surface MS of the substrate S placed on the region 21 in the Z direction.

[0041] The cover member 42 has a plurality of openings 43. Each opening 43 is a through-hole that penetrates the top plate of the cover member 42, connecting space SP2 and space SP1. The shape of the openings 43 may be circular or linear, such as a slit. The arrangement and dimensions of the openings 43 are determined to improve the uniformity of the drying of the solution film F applied on the substrate S. For example, by making the area of ​​the opening 43 facing a part of the solution film F on the substrate S that has a high drying rate smaller than the area of ​​the other openings 43, the drying rate of the solution film F can be adjusted and uneven drying rates can be eliminated.

[0042] The opening area per unit area in the cover member 42 is called the opening ratio. In the cover unit 40, the area of ​​each opening 43 is adjusted so that the opening ratio near the outer periphery of the area coated with the solution film F is smaller than the opening ratio near the center of the area coated with the solution film F. For example, in the cover unit 40, the opening ratio of the part facing the center of the area coated with the solution film F may be set to 40% to 70%, and the opening ratio of the part facing the outer periphery of the area coated with the solution film F may be set to 20% to 50%. Note that the cover unit 40 only needs to have a configuration that can connect space SP2 and space SP1, and it is not necessary for the cover member 42 to have openings 43. Also, the enclosure wall 41 may have openings not shown.

[0043] The vacuum drying apparatus 100 is equipped with a control device 90 that controls various parts of the apparatus. The control device 90 is composed of, for example, a computer. The control device 90 includes a CPU, which is an example of a processor, RAM, which is a temporary storage device, ROM and SSD, which are non-temporary storage devices (recording media), and I / O, which is an interface. The non-temporary storage device stores a control program that causes the CPU of the control device 90 to execute the control of various parts of the entire apparatus in the manufacturing process described later. The control device 90 controls the pressure inside the airtight container 10 by controlling the vacuum mechanism 30. The control device 90 also controls the supply and cessation of gas and the flow rate of gas by controlling valves 53 and 54. Furthermore, as will be described later, the control device 90 controls the internal pressure of the gas introduction section 52 and connection section 56 by controlling the openable and closable valves 5202 and 5602, thereby reducing unevenness in the drying rate of the solution film F. It is preferable that the opening degree of valves 5202 and 5602 can be controlled independently.

[0044] (Mechanism to reduce uneven drying speed) As already mentioned, in the apparatus described in Patent Document 1, when the pressure inside the container is reduced, residual gas may flow into the space inside the cover unit from the connection part connected to the gas analyzer and the gas inlet part into which inert gas is introduced, potentially causing unevenness in the drying rate of the solution film.

[0045] This specification discloses at least two techniques for suppressing uneven drying rates of the solution film. The first technique is to suppress the flow conductance from the connection or gas inlet to the cover unit in order to prevent residual gas from flowing into the space inside the cover unit from the connection or gas inlet. The second technique is to control the pressure inside the connection or gas inlet so that it is lower than the pressure inside the cover unit in order to prevent residual gas from flowing into the space inside the cover unit from the connection or gas inlet. In the substrate processing apparatus according to the embodiment, both the first and second techniques may be implemented, or only one of them may be implemented.

[0046] First, the first technology will be explained with reference to Figures 4 and 5. Figure 4 is a schematic partial cross-sectional view showing the space SP2 enclosed by the enclosure wall 41 of the cover unit 40 and the connection part of the gas introduction section 52. Figure 5 is a partial cross-sectional view showing the space SP2 enclosed by the enclosure wall 41 of the cover unit 40 and the connection part of the connection section 56.

[0047] The gas introduction section 52 and the connection section 56 are in communication with the space SP2, but each tip is provided with a conductance limiting section 5000 to reduce the flow conductance in order to suppress residual gas from flowing into the space SP2. The conductance limiting section 5000 may be, for example, a lid-shaped member with at least one pinhole formed therein. Alternatively, it may be a porous lid-shaped member with a communication passage formed by a number of holes. As the porous member, for example, a ceramic filter, porous glass, ceramic honeycomb, or porous metal can be used. As the porous material, a material that generates little gas under reduced pressure is preferred. The tips of the gas introduction section 52 and the connection section 56 are preferably flush with the inner surface 401 (Figure 1) of the base unit.

[0048] Furthermore, it is preferable that the surfaces of the tip portions of the gas introduction section 52 and the connection section 56, and the surface of the conductance limiting section 5000, have the same wettability as the inner surface 401 (Figure 1) of the cover unit 40. If the inner surface 401 is provided with a liquid-repellent member 402, it is preferable to form a member having similar liquid-repellent properties on these surfaces as well. If liquid-repellent members are formed on the gas introduction section 52 and the connection section 56, it is preferable that the tip portions of the gas introduction section 52 and the connection section 56 are flush with the liquid-repellent member 402.

[0049] According to the first technology, when the pressure in space SP2 is reduced, it is possible to suppress the rapid inflow of gas remaining in the pipes of the gas introduction section 52 and the connection section 56 into space SP2.

[0050] Next, the second technology will be described. As shown in Figure 1, a pressure regulating unit 5201 is connected to the gas introduction section 52 via an openable / closable valve 5202 between the inner wall of the airtight container 10 and the cover unit 40. Also, a pressure regulating unit 5601 is connected to the connection section 56 via an openable / closable valve 5602 between the inner wall of the airtight container 10 and the cover unit 40. The pressure regulating units 5201 and 5601 are tubular members, and the main material is preferably metal, such as stainless steel. The stainless steel is preferably austenitic stainless steel containing 0.045% or less phosphorus and 0.030% or less sulfur (i.e., stainless steel specified as SUS304 in the Japanese Industrial Standards: JIS).

[0051] First, let's describe the pressure regulating section 5201. The pressure regulating section 5201 has a pipe structure and is connected to the internal space SP0 through an opening at one end of the pipe. The other end of the pipe is connected to the gas inlet section 52 via a valve 5202 located in the middle of the pipe. When the valve 5202 is opened, the pipe space of the gas inlet section 52 communicates with the internal space SP0 via the pressure regulating section 5201. The flow conductance of the pressure regulating section 5201, i.e., the length and inner diameter of the pipe, is set so that residual gas in the pipe space of the gas inlet section 52 flows more easily into the internal space SP0 than into the space SP2 inside the cover unit 40. For example, it is preferable that the inner diameter of the pressure regulating section 5201 be less than or equal to the inner diameter of the gas inlet section 52.

[0052] When the pressure is reduced by the pressure reduction mechanism 30 via the exhaust port 3001, the internal space SP0 is first exhausted, causing a decrease in pressure. Then, the space SP2 inside the cover unit 40 is exhausted via the opening 43, causing a decrease in pressure. Therefore, the pressure in the internal space SP0 near the exhaust port 3001 becomes lower than the pressure in space SP2 inside the cover unit 40 more quickly. At this time, one end of the gas inlet 52 is connected to space SP2, but when the valve 5202 is open, the inside of the gas inlet 52 is connected to the lower-pressure internal space SP0 via the pressure adjustment unit 5201. For this reason, the pressure inside the gas inlet 52 is controlled so as not to exceed the pressure inside the cover unit 40. The remaining gas in the gas inlet 52 is suppressed from flowing into the space inside the cover unit and flows towards the lower-pressure internal space SP0 via the pressure adjustment unit 5201.

[0053] Preferably, the valve 5202 is configured to use a differential pressure valve or the like so that when the internal pressure in the gas inlet 52 becomes greater than that in the space SP2, the valve 5202 opens to reduce the internal pressure. Preferably, the operating point of the valve 5202 can be adjusted within a range of 1 Pa to 300 Pa for the internal pressure difference. This is because if the internal pressure difference is less than 1 Pa, there is a possibility of gas backflow from the space SP2 into the gas inlet 52, and if it is greater than 300 Pa, there is a possibility of residual gas leaking from the gas inlet 52 into the space SP2. In Figure 1, a configuration is shown in which the valve 5202 with an opening and closing mechanism is placed in the middle of the pressure adjustment section 5201, but in some cases, a configuration without the valve 5202 may be used.

[0054] The position where the pressure adjustment unit 5201 is connected to the gas inlet 52 is preferably such that the distance to the cover unit 40 is shorter than the distance to the inner wall of the airtight container 10. This is because reducing the distance from the connection point to the cover unit increases the effectiveness of reducing the amount of residual gas remaining in the gas inlet 52 that flows into the cover unit.

[0055] The position of one end (opening) of the pressure adjustment section 5201 connected to the internal space SP0 is preferably such that the distance to the exhaust port 3001 is shorter than the distance to the cover unit 40. This is because reducing the distance to the exhaust port 3001 allows the pressure adjustment within the gas introduction section 52 to quickly follow the operation of the pressure reduction mechanism 30.

[0056] Next, the pressure regulating section 5601 will be described. The pressure regulating section 5601 has the same configuration as the pressure regulating section 5201 and produces the same effect. The pressure regulating section 5601 has a pipe structure and is connected to the internal space SP0 through an opening at one end of the pipe. The other end of the pipe is connected to the connection section 56 via a valve 5602 located in the middle of the pipe. When the valve 5602 is opened, the pipe space of the connection section 56 communicates with the internal space SP0 via the pressure regulating section 5601. The flow conductance of the pressure regulating section 5601, i.e., the length and inner diameter of the pipe, is set so that residual gas in the pipe space of the connection section 56 flows more easily to the internal space SP0 than to the space SP2 inside the cover unit 40. For example, it is preferable that the inner diameter of the pressure regulating section 5601 be less than or equal to the inner diameter of the connection section 56.

[0057] When the pressure is reduced by the pressure reduction mechanism 30 via the exhaust port 3001, the internal space SP0 is first exhausted, causing a decrease in pressure. Then, the space SP2 inside the cover unit 40 is exhausted via the opening 43, causing a decrease in pressure. Therefore, the pressure in the internal space SP0 near the exhaust port 3001 becomes lower than the pressure in space SP2 inside the cover unit 40 more quickly. At this time, one end of the connection part 56 is connected to space SP2, but when the valve 5602 is open, the inside of the connection part 56 is connected to the lower-pressure internal space SP0 via the pressure adjustment part 5601. As a result, the pressure inside the connection part 56 is controlled so as not to exceed the pressure inside the cover unit 40. The residual gas in the connection part 56 is suppressed from flowing into the space inside the cover unit and flows towards the lower-pressure internal space SP0 via the pressure adjustment part 5601.

[0058] Preferably, the valve 5602 is configured to use a differential pressure valve or the like so that when the internal pressure in the connection part 56 becomes greater than that in the space SP2, the valve 5602 opens to reduce the internal pressure. Preferably, the operating point of the valve 5602 can be adjusted within the range of an internal pressure difference of 1 Pa to 300 Pa. This is because if the internal pressure difference is less than 1 Pa, there is a possibility of gas backflow from the space SP2 into the connection part 56, and if it is greater than 300 Pa, there is a possibility of residual gas leaking from the connection part 56 into the space SP2. In Figure 1, a configuration is shown in which the valve 5602 with an opening and closing mechanism is placed in the middle of the pressure adjustment part 5601, but in some cases, a configuration without the valve 5602 may be used.

[0059] The position where the pressure adjustment unit 5601 is connected to the connection unit 56 is preferably such that the distance to the cover unit 40 is shorter than the distance to the inner wall of the airtight container 10. This is because reducing the distance from the connection position to the cover unit increases the effectiveness of reducing residual gas remaining in the connection unit 56 from flowing into the cover unit.

[0060] The position of one end (opening) of the pressure adjustment section 5601 connected to the internal space SP0 is preferably such that the distance to the exhaust port 3001 is shorter than the distance to the cover unit 40. This is because reducing the distance to the exhaust port 3001 allows the pressure adjustment within the connection section 56 to quickly follow the operation of the pressure reduction mechanism 30.

[0061] By implementing either or both of the first and second technologies described above, it is possible to suppress the rapid inflow of gas remaining in the pipes of the gas introduction section 52 and the connection section 56 into the space SP2 when the pressure in the space SP2 is reduced.

[0062] (Method of manufacturing articles) Next, a method for manufacturing articles using the vacuum drying apparatus 100 according to the above-described embodiment will be explained. The method for manufacturing articles according to this embodiment is suitably applied, for example, when manufacturing articles such as organic EL panels using an inkjet device. The method for manufacturing articles according to this embodiment may include a coating step of placing or coating a solution film on a substrate by a printing method using an inkjet device. It also includes a drying step of drying the solution film coated on the substrate with the vacuum drying apparatus to obtain a substrate on which a dried film has been formed. Furthermore, such a manufacturing method may include other steps, such as firing, cooling, dehumidification, dry cleaning, electrode formation, or sealing film formation. The method for manufacturing articles according to this embodiment provides advantageous effects in at least one of the performance, quality, productivity, and production cost of the article.

[0063] The following describes some steps in the manufacturing method of an organic EL panel, which is an example of an item, including the drying process. A solution film F is applied to the necessary areas on the main surface MS of the substrate S by a coating device such as an inkjet device. The substrate S with the solution film F applied is then transported by a transport device RB into the space SP2 inside the cover unit 40. Then, under the control of the control device 90, a drying process (drying step) is performed to dry (evaporate) the solvent of the solution film F on the substrate S.

[0064] Figure 3 is a flowchart of the method for manufacturing an article according to the first embodiment. In step S1, the control device 90 controls the transport device RB to place the substrate S coated with the solution film F onto the substrate holding section 20. As a result, the substrate S is placed on the area 21 of the substrate holding section 20.

[0065] Next, in step S2, the control device 90 moves the shutter 48 to the closed position, making the container 10 airtight.

[0066] Next, in step S3, the control device 90 performs a drying process. The drying process in step S3 will be described in detail below. Figure 6 is a graph showing an example of pressure control in the drying process according to Embodiment 1. In the graph of Figure 6, the horizontal axis represents time, and the vertical axis represents the pressure in the internal space SP0. The control device 90 controls the pressure reduction mechanism 30 so that the pressure value detected by the pressure gauge 57 approaches the pressure command value set for performing the drying process. Below the pressure graph, the timing of the opening and closing operations of valves 5202 and 5602 is shown.

[0067] First, the control device 90 controls the depressurization mechanism 30 so that the pressure in the internal space SP0 of the airtight container 10, i.e., the pressure indicated by the pressure gauge 57, decreases from atmospheric pressure to a first pressure P1 (period D1). As a result, the pressure inside the airtight container 10 is reduced to a first pressure P1. Period D1 is the process of reducing the pressure from atmospheric pressure to a first pressure P1. The first pressure P1 is a pressure lower than atmospheric pressure and higher than the vapor pressure of the solvent. The first pressure P1 depends on the vapor pressure of the solvent, but for example, it is 10 Pa.

[0068] Then, after the pressure indicated by the pressure gauge 57 reaches the first pressure P1, the control device 90 controls the pressure reduction mechanism 30 so that the pressure in the internal space SP0, i.e., the pressure indicated by the pressure gauge 57, is maintained at the first pressure P1 (period D2).

[0069] As shown in Figure 6, it is preferable for the control device 90 to keep valves 5202 and 5602 open for at least a portion of the periods D1 and D2. By keeping them open, residual gas inside the gas introduction section 52 and connection section 56 is discharged into space SP1 through the openings on the open end sides of the pressure adjustment section 5201 and pressure adjustment section 5601, thereby preventing it from flowing out into space SP2.

[0070] Furthermore, the control device 90 supplies inert gas from the gas introduction section 52 to the space SP2 for at least a portion of the period from period D2 to period D4, and by closing the valve 5202 during that time, the inert gas can be efficiently supplied into the space SP2.

[0071] During period D2, the control device 90 operates the depressurization mechanism 30 and controls the supply of inert gas from the gas inlet 51 to the space SP1 so that the pressure indicated by the pressure gauge 57 exceeds the vapor pressure of the solvent, i.e., to maintain the first pressure P1. Note that the supply of inert gas from the gas inlet 51 to the space SP1 may be limited to period D2, or any of the other periods D1, D3, or D4, for example, during period D4.

[0072] During period D2, the pressure in space SP2 is maintained at the first pressure P1, so that the solvent does not evaporate rapidly from the solution film F, but rather dries uniformly at an appropriate rate. That is, the solution film F can be dried so that its thickness becomes uniform. Thus, the surface of the solution film F can be made flat. In addition, the cover unit 40 has multiple openings 43 formed therein. During period D2, the size of the openings 43 is adjusted so that the pressure distribution in space SP2 becomes uniform while maintaining the pressure in space SP2 at a predetermined pressure. As a result, the pressure in space SP2 is finely adjusted, and the solution film F can be dried uniformly more effectively. The shape and quality of the solution film F are generally stable by the end of period D2.

[0073] After period D2 has elapsed, the control device 90 controls the depressurization mechanism 30 so that the pressure in the internal space SP0 of the airtight container 10, i.e., the pressure indicated by the pressure gauge 57, decreases from the first pressure P1 to the second pressure P2 (period D3). As a result, the pressure inside the airtight container 10 is reduced to the second pressure P2. Period D3 is the process of reducing the pressure from the first pressure P1 to the second pressure P2. The second pressure P2 is a pressure lower than the first pressure P1 and is a pressure lower than the vapor pressure of the solvent. The second pressure P2 depends on the vapor pressure of the solvent, but for example, 10 -3 The pressure is Pa. Then, after the pressure indicated by the pressure gauge 57 reaches the second pressure P2, the control device 90 controls the pressure reduction mechanism 30 so that the pressure in the internal space SP0, i.e., the pressure indicated by the pressure gauge 57, is maintained at the second pressure P2 for a period of two hours (period D4).

[0074] From period D3 onward, the solution film F on the substrate S is further dried while the pressure inside the airtight container 10 is reduced to the second pressure P2. In particular, during period D4, the solution film F on the substrate S is further dried while maintaining the pressure in the internal space SP0 at the second pressure P2. Since a certain degree of drying has occurred during period D2 and the shape of the film has already stabilized, the pressure is reduced during period D4 compared to period D2 to accelerate drying and shorten the processing time.

[0075] The control device 90 analyzes the gas in space SP2 using the gas analyzer 55 during at least a portion of the period from period D3 to period D4, and monitors the drying state of the solution film. During this time, the accuracy of gas detection can be improved by closing the valve 5602.

[0076] Furthermore, it is preferable to open valves 5202 and 5602 after the end of period D4, and in particular, to open them during the process of returning the inside of the container to atmospheric pressure. It is also preferable to keep valves 5202 and 5602 open until the next substrate to be processed is brought into the container. By reducing the pressure difference between the space SP2 and the inside of the gas inlet 52 and connection 56, it is possible to suppress the suction of solvent vapors remaining in the space SP2 into the gas inlet 52 and connection 56. In other words, it is possible to prevent solvent vapors from adhering to the inner surfaces of the gas inlet 52 and connection 56 as contaminants.

[0077] Returning to Figure 3, if it is determined in step S4 that the drying process is complete (step S4: YES), the shutter is opened in step S5, the substrate is removed from the airtight container in step S6, and the drying process is completed.

[0078] According to this embodiment, when drying a solution film F formed on a substrate S by a solution coating apparatus (not shown), the unevenness of the drying speed can be reduced compared to conventional methods, making it possible to manufacture high-quality substrates for organic EL panels with a high yield.

[0079] For comparison, a conventional vacuum drying apparatus shown in Figure 10 will be described in which the conductance limiting section 5000, the pressure adjustment section 5201, and the pressure adjustment section 5601 are not provided. During period D1, as the pressure inside the airtight container 10X decreases, residual gas remaining inside the gas inlet section 52X and connection section 56X flows into the cover unit 40X and passes near the solution film on the substrate. As a result, the way the solvent evaporates changes in the solution film near the outlet of the connection section 56X or the gas inlet section 52X due to the influence of the passing gas flow, causing uneven drying rates between the solution film near the outlet and the solution film farther away from the outlet. Therefore, the thickness, quality, and shape of the solid film formed after drying become non-uniform within the substrate.

[0080] (Embodiment 2) In Embodiment 1, a second technique for suppressing the rapid inflow of gas remaining in the pipes of the gas introduction section 52 and connection section 56 into the space SP2 was shown, in which the opening at one end of the pressure adjustment section is connected to the internal space SP0. However, the embodiments of the present invention are not limited to this. Embodiment 2 will be described below, but matters common to Embodiment 1 will be omitted or simplified in the explanation.

[0081] Figure 7 is a schematic cross-sectional view showing the configuration of a vacuum drying apparatus 101 as a substrate processing apparatus according to Embodiment 2. In this embodiment, a pressure adjustment unit 5203 is connected to a gas inlet 52 via a valve 5204. A pressure adjustment unit 5603 is also connected to a connection 56 via a valve 5604. The connection between the pressure adjustment unit 5203 and the gas inlet 52, and the connection between the pressure adjustment unit 5603 and the connection 56 are made within space SP1. The vacuum drying apparatus 101 according to this embodiment has the same configuration as the vacuum drying apparatus 101 according to Embodiment 1, except for the valve 5204, the pressure adjustment unit 5203, the valve 5604, and the pressure adjustment unit 5603.

[0082] Valve 5204 is positioned in the same location as valve 5202 in Embodiment 1, and valve 5604 is positioned in the same location as valve 5602 in Embodiment 1. Although the opening degree of valves 5204 and 5604 can be adjusted independently, the timing of their opening and closing operations differs from that of Embodiment 1, as will be described later.

[0083] In this embodiment, the pressure adjustment section 5203 has a tubular structure, but one end opposite to the gas introduction section 52 is connected to a pipeline 3002 leading to the pressure reduction mechanism 30, rather than opening to the internal space SP0 as in Embodiment 1. Similarly, the pressure adjustment section 5603 has a tubular structure, but one end opposite to the connection section 56 is connected to a pipeline 3002 leading to the pressure reduction mechanism 30, rather than opening to the internal space SP0 as in Embodiment 1. The pressure adjustment sections 5203 and 5603 are tubular members, and the main material is preferably metal, such as stainless steel. Preferably, the stainless steel is an austenitic stainless steel containing 0.045% or less phosphorus and 0.030% or less sulfur (i.e., stainless steel specified as SUS304 in the Japanese Industrial Standards: JIS).

[0084] First, the pressure regulating section 5203 will be described. The pressure regulating section 5203 has a pipe structure, with one end of the pipe connected to the pipeline 3002. The other end of the pipe is connected to the gas inlet section 52 via a valve 5204 located in the middle of the pipe. When the valve 5204 is opened, the internal space of the gas inlet section 52 communicates with the pressure reducing mechanism 30 via the pressure regulating section 5203 and the pipeline 3002. The flow conductance of the pressure regulating section 5203, i.e., the length and inner diameter of the pipe, is set so that residual gas in the internal space of the gas inlet section 52 flows more easily into the pipeline 3002 than into the space SP2 inside the cover unit 40. For example, it is preferable that the inner diameter of the pressure regulating section 5203 be less than or equal to the inner diameter of the gas inlet section 52.

[0085] When the pressure inside the airtight container 10 is reduced by the pressure reduction mechanism 30 via the exhaust port 3001, the internal space SP0 is first exhausted and the pressure decreases. Then, the space SP2 inside the cover unit 40 is exhausted via the opening 43 and the pressure decreases. At this time, one end of the gas inlet 52 is connected to space SP2, but when the valve 5204 is open, the inside of the gas inlet 52 is connected to the lower-pressure pipeline 3002 via the pressure adjustment unit 5203. As a result, the pressure inside the gas inlet 52 is controlled so as not to exceed the pressure inside the cover unit 40, and the flow of residual gas from the gas inlet 52 into the space inside the cover unit is suppressed.

[0086] Preferably, the valve 5204 is configured to use a differential pressure valve or the like so that when the internal pressure in the gas inlet 52 becomes greater than that in the space SP2, the valve 5204 opens to reduce the internal pressure. Preferably, the operating point of the valve 5204 can be adjusted within the range of an internal pressure difference of 1 Pa to 300 Pa. This is because if the internal pressure difference is less than 1 Pa, there is a possibility of gas backflow from the space SP2 into the gas inlet 52, and if it is greater than 300 Pa, there is a possibility of residual gas leaking from the gas inlet 52 into the space SP2.

[0087] The position where the pressure adjustment unit 5203 is connected to the gas inlet 52 is preferably such that the distance to the cover unit 40 is shorter than the distance to the inner wall of the airtight container 10. This is because reducing the distance from the connection point to the cover unit increases the effectiveness of reducing the amount of residual gas remaining in the gas inlet 52 that flows into the cover unit.

[0088] In this embodiment, since one end of the pressure adjustment unit 5203 is directly connected to the pipeline 3002, which is the exhaust path of the pressure reduction mechanism 30, the pressure inside the gas introduction unit 52 can be adjusted even more quickly than in Embodiment 1.

[0089] Next, the pressure regulating section 5603 will be described. The pressure regulating section 5603 has the same configuration as the pressure regulating section 5203 and produces the same effect. The pressure regulating section 5603 has a pipe structure and is connected to the pipeline 3002 through an opening at one end of the pipe. The other end of the pipe is connected to the connection section 56 via a valve 5604 located in the middle of the pipe. When the valve 5604 is opened, the internal space of the connection section 56 communicates with the pressure reducing mechanism 30 via the pressure regulating section 5603 and the pipeline 3002. The flow conductance of the pressure regulating section 5603, i.e., the length and inner diameter of the pipe, is set so that residual gas in the internal space of the connection section 56 flows more easily into the pipeline 3002 than into the space SP2 inside the cover unit 40. For example, it is preferable that the inner and outer diameters of the pressure regulating section 5603 be less than or equal to the inner diameter of the connection section 56.

[0090] When the pressure is reduced by the pressure reduction mechanism 30 via the exhaust port 3001, the internal space SP0 is first exhausted, causing the pressure to drop. Then, the space SP2 inside the cover unit 40 is exhausted via the opening 43, causing the pressure to drop. At this time, one end of the connection part 56 is connected to space SP2, but when the valve 5604 is open, the inside of the connection part 56 is connected to the lower-pressure pipeline 3002 via the pressure adjustment part 5603. As a result, the pressure inside the connection part 56 is controlled so as not to exceed the pressure inside the cover unit 40, and the inflow of residual gas from the connection part 56 into the space inside the cover unit is suppressed.

[0091] Preferably, the valve 5604 is configured to use a differential pressure valve or the like so that when the internal pressure in the connection part 56 becomes greater than that in the space SP2, the valve 5604 opens to reduce the internal pressure. Preferably, the operating point of the valve 5604 can be adjusted within the range of an internal pressure difference of 1 Pa to 300 Pa. This is because if the internal pressure difference is less than 1 Pa, there is a possibility of gas backflow from the space SP2 into the connection part 56, and if it is greater than 300 Pa, there is a possibility of residual gas leaking from the connection part 56 into the space SP2.

[0092] The position where the pressure adjustment unit 5603 is connected to the connection unit 56 is preferably such that the distance to the cover unit 40 is shorter than the distance to the inner wall of the airtight container 10. This is because reducing the distance from the connection position to the cover unit increases the effectiveness of reducing the amount of residual gas remaining in the connection unit 56 that flows into the cover unit.

[0093] In this embodiment, since one end of the pressure adjustment unit 5603 is directly connected to the pipeline 3002, which is the exhaust path of the pressure reduction mechanism 30, the pressure in the connection unit 56 can be adjusted even more quickly than in Embodiment 1.

[0094] The vacuum drying apparatus 101 of this embodiment also operates according to the flowchart shown in Figure 3, but the valve operation timing differs from that of Embodiment 1. Figure 8 is a graph showing an example of pressure control in the drying process according to Embodiment 2. In the graph of Figure 8, the horizontal axis represents time, and the vertical axis represents the pressure in the internal space SP0, i.e., the pressure in space SP2. The control device 90 controls the pressure reduction mechanism 30 so that the pressure value detected by the pressure gauge 57 approaches the pressure command value set for performing the drying process. Below the pressure graph, the timing of the opening and closing operations of valves 5204 and 5604 of this embodiment is shown.

[0095] It is preferable for the control device 90 to keep valves 5204 and 5604 open during period D1 and at least a portion of period D2. By keeping them open, residual gas inside the gas introduction section 52 and connection section 56 flows towards the depressurization mechanism 30 via the pressure adjustment section 5203 and pressure adjustment section 5603, thereby suppressing outflow into space SP2.

[0096] Furthermore, it is preferable that the control device 90 closes the valve 5204 before supplying inert gas from the gas introduction section 52 to the space SP2 during any of the periods D2 to D4. This is to ensure that the inert gas is efficiently supplied into the space SP2.

[0097] The control device 90 analyzes the gas in space SP2 using the gas analyzer 55 for at least a portion of the period from period D3 to period D4, but the accuracy of gas detection can be improved by closing valve 5604 during that time. Furthermore, the control device 90 controls valves 5204 and 5604 to close during the period when the airtight container 10 is at atmospheric pressure.

[0098] (Embodiment 3) In the descriptions of Embodiments 1 and 2, a vacuum drying apparatus in which a single cover unit 40 is installed inside an airtight container 10 was used as an example, but the embodiments of the present invention are not limited thereto. Embodiment 3 will be described below, but matters common to Embodiments 1 or 2 will be omitted or simplified in the description.

[0099] Figure 9 is a schematic top view showing a part of the vacuum drying apparatus according to Embodiment 3. Depending on the application of the substrate S, the areas to which the solution film F is applied may be formed at multiple locations on the substrate S, spaced apart from each other. For example, when manufacturing a display panel substrate using a so-called multi-chamfering process, multiple display panel films are formed simultaneously on multiple areas of a large-area substrate S, and then the substrate S is diced to separate it into multiple display panel substrates.

[0100] In such cases, if the space above the substrate S, where multiple regions coated with the solution film F are spaced apart, is covered with a single cover unit 40, the pressure distribution of solvent vapor in the atmosphere above each region will differ, potentially causing variations in the drying rate of the solution film F within the substrate S. Therefore, in this embodiment, cover units are individually arranged to correspond to each of the multiple regions coated with the solution film F.

[0101] For example, as shown in Figure 9, three cover units 40A, 40B, and 40C are arranged inside the airtight container 10. The size of each cover unit may be the same or different.

[0102] A gas introduction section 52 is provided for supplying an inert gas to the space within each cover unit. The gas introduction section 52 branches and connects to each cover unit. A conductance limiting section 5000 (first technology), as described with reference to Figure 4, is provided at the connection point between the gas introduction section 52 and each cover unit.

[0103] A pressure regulating unit 5201 (second technology) is connected to the gas inlet 52 via a valve 5202. As shown in Figure 9, the valve 5202 and pressure regulating unit 5201 may be provided at one location before the gas inlet 52 branches out toward each cover unit. Alternatively, the valve 5202 and pressure regulating unit 5201 may be individually provided near each cover unit.

[0104] Although not shown in the diagram, the gas in the space within each cover unit may also be introduced to the gas analyzer 55 via the connection part 56. In that case, the pressure adjustment unit 5601 is connected to the connection part 56 via the valve 5602.

[0105] One end of these pressure adjustment units may be connected to the internal space SP0 inside the container, as in Embodiment 1, or to the pipeline 3002, as in Embodiment 2. According to this embodiment, even in a substrate drying apparatus equipped with multiple cover units, unevenness in drying speed can be reduced compared to conventional methods.

[0106] [Other embodiments] The present invention is not limited to the embodiments described above, and many modifications are possible within the technical concept of the present invention. For example, all or part of the different embodiments described above may be combined and implemented.

[0107] In the embodiments described above, an example was shown in which the substrate drying apparatus includes both a gas introduction section and a connection section, and both the first and second techniques are applied, but it is not limited to this. The substrate drying apparatus may include only one of the gas introduction section and the connection section, or it may be an apparatus to which only one of the first and second techniques is applied.

[0108] Methods for manufacturing articles using the substrate processing apparatus described above are also included in embodiments of the present invention. Manufacturing apparatuses and systems for manufacturing articles equipped with the substrate processing apparatus described above are also included in embodiments of the present invention.

[0109] For example, an article can be manufactured by forming a solution film on a substrate using a coating device such as an inkjet coating device or a printing device (solution film formation step), and then drying the solution film using the substrate processing device or substrate processing method described above (drying step). The solution film may be formed from a liquid containing a functional material for forming functional thin films such as electrodes or optical filters or functional elements such as organic EL elements, or from a liquid containing insoluble solid components.

[0110] The substrate processing apparatus according to the embodiment may be, for example, an apparatus for manufacturing a substrate used in a display device. The substrate processing apparatus may be configured, for example, as part of a film forming apparatus for forming an organic film on a substrate. The organic film may be, for example, a hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer of an organic light-emitting diode (OLED). The process for manufacturing an organic EL element carried out by the substrate processing apparatus according to the embodiment may include a step of applying a solution containing a functional material to a substrate and drying it to form an organic film such as a hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer. The method for manufacturing an organic EL element (OLED) may include processes such as firing, cooling, dehumidification, dry cleaning, electrode formation, and sealing film formation, in addition to the vacuum drying process according to the embodiment.

[0111] The present invention is not limited to manufacturing apparatus for display device substrates; for example, it may be applied to a manufacturing apparatus for producing energy storage elements by coating a substrate with a liquid containing an electrical material and drying it. Alternatively, it may be applied to a manufacturing apparatus for producing optical elements by coating a substrate with a liquid containing an optical material such as a reflective material or an antistatic material and drying it.

[0112] The method for manufacturing articles and the manufacturing apparatus according to the embodiment provide advantageous effects in at least one of the performance, quality, productivity, and production cost of the articles.

[0113] The present invention can also be realized by supplying a program that implements one or more of the functions of the embodiments to a system or device via a network or storage medium, and by having one or more processors in the computer of that system or device read and execute the program. It can also be realized by a circuit (e.g., an ASIC) that implements one or more functions.

[0114] This specification discloses at least the following: [Matter 1] Container and A vacuum mechanism capable of reducing the pressure inside the container, A substrate holding part, which is capable of holding a substrate having a film and is located inside the container, A cover unit is positioned inside the container so as to surround the upper part of the substrate held by the substrate holding portion, It includes a gas introduction unit connected to the cover unit and capable of supplying gas to a second space surrounded by the cover unit and the substrate holding unit, The cover unit has an opening, and the first space and the second space inside the container, which are outside the cover unit, are in communication through the opening. The aforementioned gas introduction section is During the period in which the depressurization mechanism depressurizes the inside of the container, at least during the first period, a pipeline for supplying gas to the second space, The system includes a suppression means that, during the period in which the depressurization mechanism is reducing the pressure inside the container, suppresses the outflow of gas from the pipeline into the second space during a second period different from the first period. A substrate processing apparatus characterized by the following: [Matter 2] The suppression means includes a conductance limiting unit that limits the flow conductance between the pipeline and the second space. A substrate processing apparatus as described in item 1, characterized by the features described above. [Matter 3] The conductance limiting portion comprises a lid-shaped member with pinholes formed therein, or a porous lid-shaped member with multiple holes forming communication passages. A substrate processing apparatus according to item 2, characterized in that [Matter 4] The porous lid-like member comprises one of the following: a ceramic filter, porous glass, ceramic honeycomb, or a porous metal body. A substrate processing apparatus as described in item 3, characterized by the features described herein. [Matter 5] The suppression means includes a mechanism that reduces the pressure in the pipeline to less than the pressure in the second space during the second period. A substrate processing apparatus according to any one of items 1 to 4, characterized by the features described herein. [Matter 6] The mechanism includes a pressure adjustment unit that connects the first space and the pipeline via an openable and closable valve, and during the second period, the valve is opened to connect the pipeline and the first space. A substrate processing apparatus according to item 5, characterized by the features described herein. [Matter 7] The mechanism includes a pressure adjustment unit that connects the pressure reducing mechanism and the pipeline via an openable and closable valve, and during the second period, the valve is opened to connect the pipeline and the pressure reducing mechanism. A substrate processing apparatus according to item 5, characterized by the features described herein. [Matter 8] The suppression means closes the valve during the first period. A substrate processing apparatus according to item 6 or 7, characterized by the features described therein. [Matter 9] The inner diameter of the pressure adjustment section is less than or equal to the inner diameter of the pipeline. A substrate processing apparatus according to any one of items 6 to 8, characterized by the features described herein. [Matter 10] Container and A vacuum mechanism capable of reducing the pressure inside the container, A substrate holding part, which is capable of holding a substrate having a film and is located inside the container, A cover unit is positioned inside the container so as to surround the upper part of the substrate held by the substrate holding portion, The gas analyzer is connected to the cover unit and includes a connection part that includes a conduit for connecting the second space surrounded by the cover unit and the substrate holding part, The cover unit has an opening, and the first space and the second space inside the container, which are outside the cover unit, are in communication through the opening. The aforementioned connection part is The pressure reduction mechanism includes a suppression means that prevents gas from flowing out of the pipeline into the second space for at least a portion of the period during which the pressure reduction mechanism is reducing the pressure inside the container, A substrate processing apparatus characterized by the following: [Matter 11] The suppression means includes a conductance limiting unit that limits the flow conductance between the pipeline and the second space. A substrate processing apparatus according to item 10, characterized by the features described above. [Matter 12] The conductance limiting portion comprises a lid-shaped member with pinholes formed therein, or a porous lid-shaped member with multiple holes forming communication passages. A substrate processing apparatus as described in item 11. [Matter 13] The porous lid-like member comprises one of the following: a ceramic filter, porous glass, ceramic honeycomb, or a porous metal body. A substrate processing apparatus according to item 12, characterized by the features described herein. [Matter 14] The suppression means includes a mechanism for reducing the pressure in the pipeline to be less than the pressure in the second space for at least a portion of the period. A substrate processing apparatus according to any one of items 10 to 13, characterized by the features described herein. [Matter 15] The mechanism includes a pressure regulating unit that connects the first space and the pipeline via an openable and closable valve, and opens the valve to connect the pipeline and the first space for at least a portion of the period. A substrate processing apparatus as described in item 14, characterized by the features described herein. [Matter 16] The mechanism includes a pressure adjustment unit that connects the pressure reducing mechanism and the pipeline via an openable and closable valve, and opens the valve for at least a portion of the period to connect the pipeline and the pressure reducing mechanism. A substrate processing apparatus as described in item 14, characterized by the features described herein. [Matter 17] The inner diameter of the pressure adjustment section is less than or equal to the inner diameter of the pipeline. A substrate processing apparatus according to item 15 or 16, characterized by the features described herein. [Matter 18] The process includes a step of drying the film applied to the substrate using a substrate processing apparatus described in any one of items 1 to 17. A method for manufacturing an article, characterized by the following: [Matter 19] The aforementioned film is a liquid film containing a functional material. A method for manufacturing an article as described in item 18, characterized by the following: [Matter 20] The aforementioned film is a liquid film for forming one of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer of an organic EL element. A method for manufacturing an article as described in item 18 or 19, characterized by the features described herein. [Explanation of symbols]

[0115] 10. Airtight container / 20. Substrate holder / 30. Pressure reduction mechanism / 40. Cover unit / 41. Enclosure wall / 42. Cover component / 43. Opening / 47. Opening / 48. Shutter / 51. Gas inlet / 52. Gas inlet / 53. Valve / 54. Valve / 55. Gas analyzer / 56. Connection part / 57. Pressure gauge / 90. Control Equipment / 100···Vacuum Drying Equipment / 101···Vacuum Drying Equipment / 3001···Exhaust Port / 5000···Conductance Limiting Unit / 5201···Pressure Regulating Unit / 5202···Valve / 5203···Pressure Regulating Unit / 5204···Valve / 5601···Pressure Regulating Unit / 5602···Valve / 5603···Pressure Regulating Unit / 5604···Valve / F···Solution Film / S···Substrate

Claims

1. Container and A vacuum mechanism capable of reducing the pressure inside the container, A substrate holding part, which is capable of holding a substrate having a film and is located inside the container, A cover unit is positioned inside the container so as to surround the upper part of the substrate held by the substrate holding portion, It includes a gas introduction unit connected to the cover unit and capable of supplying gas to a second space surrounded by the cover unit and the substrate holding unit, The cover unit has an opening, and the first space and the second space inside the container, which are outside the cover unit, are in communication through the opening. The aforementioned gas introduction section is A pipeline for supplying gas to the second space, The system includes a suppression means for preventing gas from flowing out of the pipeline into the second space. A substrate processing apparatus characterized by the following:

2. The suppression means includes a conductance limiting unit that limits the flow conductance between the pipeline and the second space. The substrate processing apparatus according to claim 1.

3. The conductance limiting portion comprises a lid-shaped member with pinholes formed therein, or a porous lid-shaped member with multiple holes forming communication passages. The substrate processing apparatus according to feature 2.

4. The porous lid-like member comprises one of the following: a ceramic filter, porous glass, ceramic honeycomb, or a porous metal body. The substrate processing apparatus according to claim 3.

5. The pipeline supplies gas to the second space during at least a first period of the time during which the depressurization mechanism is reducing the pressure inside the container. The suppression means includes a mechanism that reduces the pressure in the pipeline to less than the pressure in the second space during at least a second period, different from the first period, within the period during which the depressurization mechanism is reducing the pressure inside the container. The substrate processing apparatus according to claim 1.

6. The mechanism includes a pressure adjustment unit that connects the first space and the pipeline via an openable and closable valve, and during the second period, the valve is opened to connect the pipeline and the first space. The substrate processing apparatus according to claim 5.

7. The mechanism includes a pressure adjustment unit that connects the pressure reducing mechanism and the pipeline via an openable and closable valve, and in the second period, the valve is opened to connect the pipeline and the pressure reducing mechanism. The substrate processing apparatus according to claim 5.

8. The pipeline supplies gas to the second space during at least a first period of the time during which the depressurization mechanism is reducing the pressure inside the container. The suppression means closes the valve during the first period. The substrate processing apparatus according to claim 6 or 7.

9. The inner diameter of the pressure adjustment section is less than or equal to the inner diameter of the pipeline. The substrate processing apparatus according to claim 6 or 7.

10. Container and A vacuum mechanism capable of reducing the pressure inside the container, A substrate holding part, which is capable of holding a substrate having a film and is located inside the container, A cover unit is positioned inside the container so as to surround the upper part of the substrate held by the substrate holding portion, The gas analyzer is connected to the cover unit and includes a connection part that includes a conduit for connecting the second space, which is surrounded by the cover unit and the substrate holding part, The cover unit has an opening, and the first space and the second space inside the container, which are outside the cover unit, are in communication through the opening. The aforementioned connection part is The system includes a suppression means to prevent gas from flowing out of the pipeline into the second space. A substrate processing apparatus characterized by the following:

11. The suppression means includes a conductance limiting unit that limits the flow conductance between the pipeline and the second space. The substrate processing apparatus according to feature 10.

12. The conductance limiting portion comprises a lid-shaped member with pinholes formed therein, or a porous lid-shaped member with multiple holes forming communication passages. The substrate processing apparatus according to feature 11.

13. The porous lid-like member comprises one of the following: a ceramic filter, porous glass, ceramic honeycomb, or a porous metal body. The substrate processing apparatus according to feature 12.

14. The suppression means includes a mechanism that reduces the pressure in the pipeline to less than the pressure in the second space for at least a portion of the period during which the depressurization mechanism is reducing the pressure inside the container. The substrate processing apparatus according to feature 10.

15. The mechanism includes a pressure regulating unit that connects the first space and the pipeline via an openable and closable valve, and opens the valve to connect the pipeline and the first space for at least a portion of the period. The substrate processing apparatus according to feature 14.

16. The mechanism includes a pressure adjustment unit that connects the pressure reducing mechanism and the pipeline via an openable and closable valve, and opens the valve for at least a portion of the period to connect the pipeline and the pressure reducing mechanism. The substrate processing apparatus according to feature 14.

17. The inner diameter of the pressure adjustment section is less than or equal to the inner diameter of the pipeline. The substrate processing apparatus according to claim 15 or 16.

18. The process includes a step of drying the film applied to the substrate using a substrate processing apparatus according to any one of claims 1 to 7, or any one of claims 10 to 16. A method for manufacturing an article, characterized by the following:

19. The aforementioned film is a liquid film containing a functional material. A method for manufacturing an article according to claim 18.

20. The aforementioned film is a liquid film for forming one of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer of an organic EL element. A method for manufacturing an article according to claim 18.

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