Semiconductor device and method for manufacturing a semiconductor device

Abstract

The present invention provides a semiconductor device that exhibits excellent characteristics, and a method for manufacturing a semiconductor device. [Solution] According to the embodiment, the semiconductor device includes a silicon carbide member including a first region, a first member including silicon and oxygen, and a first layer and a second layer. The first layer is provided between the first region and the first member. The first layer includes bonding between silicon and nitrogen. The second layer is provided between the first layer and the first member. The second layer includes bonding between silicon and oxygen, and bonding between silicon and nitrogen.

Description

[Technical Field]

[0001] Embodiments of the present invention relate to a semiconductor device and a method for manufacturing a semiconductor device. [Background technology]

[0002] There are semiconductor devices such as transistors that use silicon carbide (SiC). Good performance is required in semiconductor devices. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-41725 [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] Embodiments of the present invention provide a semiconductor device that exhibits good characteristics, and a method for manufacturing a semiconductor device. [Means for solving the problem]

[0005] According to an embodiment of the present invention, the semiconductor device includes a silicon carbide member including a first region, a first member including silicon and oxygen, and a first layer and a second layer. The first layer is provided between the first region and the first member. The first layer includes bonding between silicon and nitrogen. The second layer is provided between the first layer and the first member. The second layer includes bonding between silicon and oxygen, and bonding between silicon and nitrogen. [Brief explanation of the drawing]

[0006] [Figure 1] Figure 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 2] Figure 2 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 3]Figure 3 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 4] Figure 4 is a schematic cross-sectional view illustrating a method for manufacturing a semiconductor device according to the second embodiment. [Figure 5] Figure 5 is a schematic cross-sectional view illustrating a method for manufacturing a semiconductor device according to the second embodiment. [Figure 6] Figure 6 is a schematic cross-sectional view illustrating a method for manufacturing a semiconductor device according to the second embodiment. [Figure 7] Figure 7 is a schematic cross-sectional view illustrating a method for manufacturing a semiconductor device according to the second embodiment. [Figure 8] Figure 8 is a schematic cross-sectional view illustrating a method for manufacturing a semiconductor device according to the second embodiment. [Modes for carrying out the invention]

[0007] The embodiments of the present invention will be described below with reference to the drawings. Please note that the drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of the parts, may not necessarily be identical to those of reality. Furthermore, even when representing the same part, the dimensions and ratios may differ between drawings. In this specification and in each figure, elements similar to those described above are denoted by the same reference numerals, and detailed explanations are omitted as appropriate.

[0008] (First Embodiment) Figure 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in Figure 1, the semiconductor device 110 according to this embodiment includes a silicon carbide member 30, a first member 10, a first layer 11, and a second layer 12.

[0009] The silicon carbide member 30 includes a first region 31. The silicon carbide member 30 may include, for example, 4H-SiC, 6H-SiC, or 3C-SiC.

[0010] The first member 10 contains silicon and oxygen. The first member 10 contains, for example, SiO2. The first layer 11 is provided between the first region 31 and the first member 10. As will be described later, the first layer 11 contains a bond of silicon and nitrogen. The first layer 11 contains SiN. The first layer 11 may further contain a bond of silicon and carbon. For example, the first layer 11 may contain SiCN.

[0011] The second layer 12 is provided between the first layer 11 and the first member 10. As will be described later, the second layer 12 contains a bond of silicon and oxygen and a bond of silicon and nitrogen. The second layer 12 contains, for example, SiON.

[0012] As shown in FIG. 1, the semiconductor device 110 may include a first conductive member 51. The first member 10 is provided between the first region 31 and the first conductive member 51. The first conductive member 51 is, for example, a gate electrode. In this case, the first member 10 functions as a gate insulating film.

[0013] As shown in FIG. 1, the direction from the first region 31 to the first member 10 is defined as the first direction D1. The thickness of the first layer 11 in the first direction D1 is defined as the first thickness t1. The first thickness t1 is, for example, 0.5 nm or less. The first thickness t1 may be, for example, 0.3 nm or less.

[0014] The thickness of the second layer 12 in the first direction D1 is defined as the second thickness t2. The second thickness t2 is, for example, 1 nm or less. The second thickness t2 may be, for example, 0.7 nm or less. For example, the first thickness t1 is 1 / 2 or less of the second thickness t2 of the second layer.

[0015] The thickness t0 of the first member 10 in the first direction D1 is, for example, 3 nm or more and 100 nm or less. Appropriate characteristics can be obtained when the first member 10 functions as an insulating film.

[0016] FIG. 2 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in Figure 2, in one example, the first layer 11 is a layer containing a silicon-nitrogen bond. This layer includes one Si layer and one C layer. The Si layer and the C layer overlap in the first direction D1. The first layer 11 is, for example, a terminal layer. As already described, the first layer 11 may further contain a silicon-carbon bond.

[0017] As shown in Figure 2, the second layer 12 contains first oxygen 81O, second silicon 81b, and first nitrogen 81N. The first oxygen 81O is bonded to the first silicon 81a. The first silicon 81a may be contained in either the first layer 11 or the second layer 12.

[0018] The second silicon 81b bonds with the first oxygen 81O. The first nitrogen 81N bonds with the second silicon 81b and the third silicon 81c. The third silicon 81c may be included in the second layer 12 or the first member 10.

[0019] The orientation from the first silicon 81a to the second silicon 81b includes a component in the first orientation from the first region 31 (silicon carbide member 30) to the first member 10. The orientation from the second silicon 81b to the third silicon 81c includes a component in the first orientation. The orientation from the first oxygen 81O to the first nitrogen includes a component in the first orientation. The second layer 12 is, for example, a transition layer.

[0020] By providing the first layer 11 and the second layer 12, the interface state density between the first region 31 and the first member 10 can be reduced.

[0021] For example, the nitrogen termination rate can be improved at the interface between the first region 31 and the first member 10. For example, a good interface can be obtained. For example, oxygen is replaced with nitrogen on the surface of SiC. A first bond is formed on the surface. A second unbonded bond contained in the first member 10 is connected to the first bond. This suppresses the presence of unbonded bonds.

[0022] For example, oxidation is suppressed in the first region 31. The introduction of unwanted nitrogen is suppressed in the first region 31. In the embodiment, for example, the termination rate by unbonded nitrogen can be improved at the interface between the gate insulating film and the semiconductor. The interface state density is reduced. For example, the reliability of the insulating film is improved.

[0023] In this embodiment, the first layer 11 is, for example, a terminal layer containing a high concentration of nitrogen. The second layer 12 is, for example, a transition layer containing silicon, nitrogen, and oxygen. In this embodiment, oxidation in the first region is suppressed. A stable nitrogen termination is obtained. The presence of unbonded bonds between the first member 10 and the second layer is suppressed.

[0024] For example, there is a first reference example in which a silicon oxide film is formed on a SiC layer, and then heat-treated in an atmosphere containing NO. In the first reference example, nitrogen is introduced at the interface between the SiC layer and the silicon oxide film via the silicon oxide film. In this case, oxidation of the SiC layer, which should be avoided, occurs. Unwanted nitrogen is introduced into the SiC layer. As a result, it is difficult to obtain the desired properties.

[0025] In this embodiment, unwanted oxidation of the first region 31 of SiC is suppressed. The introduction of unwanted nitrogen into the first region 31 of SiC is suppressed. The desired properties are easier to obtain. In this embodiment, the introduction of unwanted nitrogen into the first member 10 is suppressed. Traps are suppressed in the first member 10.

[0026] In this embodiment, for example, the first region 31 does not contain nitrogen. Alternatively, the concentration of nitrogen in the first region 31 is 1 / 10 of the concentration of nitrogen in the first layer 11. 5 It is less than . In one example, the nitrogen concentration in the first region 31 is 5 × 10 16 cm -3 The following is true: The concentration of nitrogen in the first region 31 is 1 × 10⁻⁶. 16 cm -3 The following is also acceptable.

[0027] In an embodiment, for example, the first member 10 does not contain nitrogen. Or, the concentration of nitrogen contained in the first member 10 is 1 / 10 of the concentration of nitrogen contained in the first layer 11. 2 Less than. In one example, the concentration of nitrogen contained in the first member 10 is 5×10 19 cm -3 Or less. The concentration of nitrogen contained in the first member 10 may be 1×10 19 cm -3 Or less. The concentration of nitrogen contained in the first member 10 may be 5×10 18 cm -3 Or less. The concentration of nitrogen contained in the first member 10 may be 1×10 18 cm -3 Or less.

[0028] FIG. 3 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in FIG. 3, the semiconductor device 111 according to the embodiment includes a first conductive member 51, a second conductive member 52, and a third conductive member 53. The configuration of the semiconductor device 111 excluding this may be the same as the configuration of the semiconductor device 110.

[0029] As shown in FIG. 3, the first member 10 is provided between the first region 31 and the first conductive member 51. The silicon carbide member 30 further includes a second region 32 and a third region 33. The first region 31 is of the first conductivity type. The second region 32 is of the second conductivity type. The third region 33 is of the first conductivity type. The first conductivity type is one of n-type and p-type. The second conductivity type is the other of n-type and p-type. Hereinafter, the first conductivity type is n-type and the second conductivity type is p-type.

[0030] The first region 31 and the third region 33 contain, for example, N as an impurity of the first conductivity type. The second region 32 contains Al as an impurity of the second conductivity type. The concentration of the impurity of the first conductivity type (for example, carrier concentration) in the third region 33 is higher than the concentration of the impurity of the first conductivity type (for example, carrier concentration) in the first region 31.

[0031] At least a portion of the second region 32 lies between the first region 31 and the third region 33. The second conductive member 52 is electrically connected to the third region 33. The third conductive member 53 is electrically connected to the first region 31. An insulating member 40 may be provided between the first conductive member 51 and the second conductive member 52.

[0032] The current flowing between the third conductive member 53 and the second conductive member 52 can be controlled by the potential of the first conductive member 51. The potential of the first conductive member 51 is, for example, a potential referenced to the potential of the second conductive member 52. The second conductive member 52 functions, for example, as a source electrode. The third conductive member 53 functions, for example, as a drain electrode. The first conductive member 51 functions, for example, as a gate electrode. The first member 10 functions, for example, as a gate insulating film. The semiconductor device 111 is, for example, a MOS transistor.

[0033] The direction from the third conductive member 53 to the first conductive member 51 is along the first direction D1. The first direction D1 is, for example, the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to both the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

[0034] As shown in Figure 3, the first region 31 includes a first subregion 31a and a second subregion 31b. In the first direction D1, the first subregion 31a lies between the third conductive member 53 and the first conductive member. The direction from the first subregion 31a to the second subregion 31b follows the second direction D2. The second direction D2 is, for example, the X-axis direction. In the first direction D1, the second subregion 31b lies between a part of the third conductive member 53 and a part of the first conductive member 51.

[0035] In the second direction D2, a portion of the second region 32 lies between a portion of the first region 31 (first partial region 31a) and the third region 33. In the first direction D1, another portion of the second region 32 lies between the second partial region 31b and the second conductive member 52.

[0036] As shown in Figure 3, the silicon carbide member 30 may include a fourth region 34. The fourth region 34 is p-shaped. In the second direction D2, a part of the second region 32 lies between a part of the first region 31 (first partial region 31a) and the fourth region 34. In the second direction D2, a third region 33 lies between the aforementioned part of the second region 32 and the fourth region 34.

[0037] As shown in Figure 3, the silicon carbide member 30 may include a fifth region 35. The fifth region 35 is a first conductivity type. The fifth region 35 is located between the third conductivity type member 53 and the first region 31 in the first direction D1. The concentration of impurities of the first conductivity type (e.g., carrier concentration) in the fifth region 35 is higher than the concentration of impurities of the first conductivity type (e.g., carrier concentration) in the first region 31. By providing the fifth region 35, a low resistance is obtained in the electrical connection between the first region 31 and the third conductivity type member 53.

[0038] (Second Embodiment) The second embodiment relates to a method for manufacturing a semiconductor device. An example of a method for manufacturing the semiconductor device 110 described above will be explained below.

[0039] Figures 4 to 7 are schematic cross-sectional views illustrating a method for manufacturing a semiconductor device according to the second embodiment. As shown in Figure 4, a first treatment T1 is performed in which the silicon carbide member 30 is heat-treated in a first atmosphere. Before the first treatment T1, treatment with high-temperature hydrogen may be performed. Treatment with high-temperature hydrogen etches the surface of the silicon carbide member 30 and removes surface portions containing impurities. After this, the first treatment T1 is performed.

[0040] The first treatment T1 forms a first layer 11 and a second film 12f on the surface portion of the silicon carbide member 30. The first layer 11 contains bonds between silicon and nitrogen. In this example, the first layer 11 further contains bonds between silicon and carbon. The second film 12f contains bonds between silicon and oxygen. The first layer 11 is located between the silicon carbide member 30 and the second film 12f.

[0041] The first atmosphere contains nitrogen. The first treatment T1 is, for example, annealing in a nitrogen-containing atmosphere. The first treatment T1 suppresses the formation of an oxide film on the surface of, for example, the silicon carbide member 30. The first atmosphere may contain a small amount of oxygen for chamber protection. The oxygen concentration in the first atmosphere is, for example, 1000 ppm or less. The formation of an oxide film is suppressed by having an oxygen concentration of 1000 ppm or less.

[0042] The first treatment T1 may be carried out, for example, in a chamber for epitaxial growth. The temperature of the first treatment T1 is, for example, between 1000°C and 1500°C. The duration of the first treatment T1 is, for example, between 1 minute and 1 hour.

[0043] As shown in Figure 5, a second treatment T2 is performed after the first treatment T1. The second treatment T2 includes heat treatment of the silicon carbide member 30 in a second atmosphere containing nitrogen and oxygen. For example, the second atmosphere includes at least one selected from the group consisting of NO and N2O. The second treatment T2 replaces, for example, the oxygen on the surface of the second film 12f with nitrogen.

[0044] The second process T2 may be carried out, for example, in a heat diffusion chamber. The temperature of the second process T2 is, for example, between 1000°C and 1400°C. The duration of the second process T2 is, for example, between 1 minute and 1 hour. The temperature of the second process T2 may also be, for example, between 1100°C and 1300°C.

[0045] As shown in Figure 6, the first member 10 is formed on the silicon carbide member 30 (second film 12f) after the second treatment T2. The first member 10 contains silicon and oxygen. The first member 10 contains, for example, SiO2. The first member 10 is formed, for example, by chemical vapor deposition (CVD). Chemical vapor deposition may include PE-CVD (Plasma Enhanced Chemical Vapor Deposition). Chemical vapor deposition may include atomic layer deposition (ALD).

[0046] As shown in Figure 7, a third treatment T3 is performed in which the laminate SB1 containing the silicon carbide member 30 and the first member 10 is heat-treated in a third atmosphere. The third atmosphere contains nitrogen and oxygen. Through the third treatment T3, the nitrogen on the surface of the second film 12f bonds with the silicon contained in the first member 10. This forms the second layer 12. A good interface is formed.

[0047] The third atmosphere includes, for example, at least one selected from the group consisting of NO and N2O. The third treatment T3 may be carried out, for example, in a thermal diffusion chamber. The temperature of the third treatment T3 is, for example, 1000°C to 1400°C. The duration of the third treatment T3 is, for example, 1 minute to 1 hour. The temperature of the third treatment T3 may also be, for example, 1100°C to 1300°C.

[0048] As described above, the second treatment T2 replaces the oxygen on the surface of the second film 12f with nitrogen. As a result, in the third treatment T3, the nitrogen on the surface of the second film 12f bonds with the silicon contained in the first member 10. On the other hand, a second reference example can be considered in which the second treatment T2 is not performed. In the second reference example, oxygen is present on the surface of the second film 12f. In the second reference example, in the third treatment T3, this oxygen does not bond with the silicon contained in the first member 10. Therefore, unbonded bonds remain. An interface rank is formed by these unbonded bonds. In the second reference example, it is difficult to obtain the desired properties.

[0049] Figure 8 is a schematic cross-sectional view illustrating a method for manufacturing a semiconductor device according to the second embodiment. Figure 8 corresponds to another example of the process illustrated in Figure 4. As shown in Figure 8, the first layer 11 includes a bond between silicon and nitrogen. In at least a portion of the first layer 11, a bond between silicon and carbon may not be substantially provided. In this case as well, a good interface is formed by the second layer 12 provided on such a first layer 11.

[0050] In embodiments, information regarding the silicon carbide component, the elemental composition in the component and layer, etc., is obtained by electron microscope images, etc. The electron microscope images may include, for example, STEM-EDS (Scanning transmission electron microscopy-Energy dispersive spectroscopy) elemental mapping. The electron microscope images may also include, for example, HAADF (High-Angle Annular Dark Field) STEM images.

[0051] The embodiment may include the following configuration (e.g., proposed technical details). (Composition 1) A silicon carbide member including the first region, A first component containing silicon and oxygen, A first layer provided between the first region and the first member, wherein the first layer includes a bond between silicon and nitrogen, A second layer provided between the first layer and the first member, the second layer includes a bond between silicon and oxygen, and a bond between silicon and nitrogen, A semiconductor device equipped with the following features.

[0052] (Configuration 2) The semiconductor device according to configuration 1, wherein the first thickness of the first layer in the first direction from the first region to the first member is 0.5 nm or less.

[0053] (Composition 3) The semiconductor device according to configuration 2, wherein the first thickness is 0.3 nm or less.

[0054] (Composition 4) The semiconductor device according to configuration 2 or 3, wherein the second thickness of the second layer in the first direction is 1 nm or less.

[0055] (Composition 5) The semiconductor device according to configuration 4, wherein the second thickness is 0.7 nm or less.

[0056] (Composition 6) The semiconductor device according to any one of configurations 1 to 5, wherein the first layer is a two-atom layer containing the bond between silicon and nitrogen.

[0057] (Composition 7) The above second layer is, The first oxygen bonded to the first silicon, The second silicon bonded with the first oxygen, The first nitrogen bonded to the second silicon and the third silicon and Includes, The orientation from the first silicon to the second silicon includes a component of the first orientation from the first region to the first member, The semiconductor device according to any one of configurations 1 to 6, wherein the orientation from the second silicon to the third silicon includes the component of the first orientation.

[0058] (Composition 8) The semiconductor device according to configuration 1, wherein the first thickness of the first layer in the first direction from the first region to the first member is 1 / 2 or less of the second thickness of the second layer in the first direction.

[0059] (Composition 9) The previous 1 region does not contain nitrogen, or The nitrogen concentration in the first region is 1 / 10 of the nitrogen concentration in the first layer. 5 A semiconductor device described in any one of configurations 1 to 8, which is less than [a certain value].

[0060] (Composition 10) The concentration of nitrogen contained in the first region is 5 × 10 16 cm -3 The semiconductor device described in Configuration 9 is as follows:

[0061] (Composition 11) The first member does not contain nitrogen, or The nitrogen concentration in the first member is 1 / 10 of the nitrogen concentration in the first layer. 2 A semiconductor device described in any one of configurations 1 to 10, which is less than [a certain value].

[0062] (Composition 12) The concentration of nitrogen contained in the first member is 5 × 10 19 cm -3 The following is a semiconductor device as described in configuration 11.

[0063] (Composition 13) Further comprising a first conductive member, The first member is a semiconductor device according to any one of configurations 1 to 12, provided between the first region and the first conductive member.

[0064] (Composition 14) The present invention further comprises a first conductive member, a second conductive member, and a third conductive member. The first member is provided between the first region and the first conductive member, The silicon carbide member further includes a second region and a third region, The first region is a first conductivity type, The aforementioned second region is of the second conductivity type, The third region is the first conductivity type, At least a portion of the second region lies between the first region and the third region, The second conductive member is electrically connected to the third region, The semiconductor device according to any one of configurations 1 to 8, wherein the third conductive member is electrically connected to the first region.

[0065] (Composition 15) A first treatment is performed in which the silicon carbide component is heat-treated in a first atmosphere. After the first treatment, a second treatment is performed in which the silicon carbide member is heat-treated in a second atmosphere containing nitrogen and oxygen. A first member containing silicon and oxygen is formed on the silicon carbide member after the second treatment. A method for manufacturing a semiconductor device, comprising performing a third treatment in which a laminate including the silicon carbide member and the first member is heat-treated in a third atmosphere containing nitrogen and oxygen.

[0066] (Composition 16) The method for manufacturing a semiconductor device according to configuration 15, wherein the second atmosphere includes at least one selected from the group consisting of NO and N2O.

[0067] (Composition 17) The method for manufacturing a semiconductor device according to configuration 15 or 16, wherein the third atmosphere includes at least one selected from the group consisting of NO and N2O.

[0068] (Composition 18) The previous atmosphere contains nitrogen, A method for manufacturing a semiconductor device according to any one of configurations 15 to 17, wherein the oxygen concentration in the first atmosphere is 1000 ppm or less.

[0069] (Composition 19) A method for manufacturing a semiconductor device according to any one of configurations 15 to 18, wherein a first conductive member is further formed on the first member after the third process.

[0070] (Composition 20) The laminated body is A first layer provided between the silicon carbide member and the first member, wherein the first layer includes a bond between silicon and nitrogen, A second layer provided between the first layer and the first member, the second layer includes a bond between silicon and oxygen, and a bond between silicon and nitrogen, A method for manufacturing a semiconductor device as described in any one of configurations 15 to 19, including the configuration described above.

[0071] According to the embodiment, a semiconductor device that can obtain good characteristics and a method for manufacturing a semiconductor device are provided.

[0072] In this specification, "perpendicular" and "parallel" do not mean strictly perpendicular and strictly parallel, but also include variations in the manufacturing process, for example, and it is sufficient if they are substantially perpendicular and substantially parallel.

[0073] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element included in a semiconductor device, such as silicon carbide members, components, layers, and conductive members, is included within the scope of the present invention as long as those skilled in the art can appropriately select from the known range to implement the present invention and obtain similar effects.

[0074] Furthermore, combinations of two or more elements from any of the specific examples, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the invention.

[0075] Furthermore, all semiconductor devices and methods for manufacturing semiconductor devices that can be implemented by those skilled in the art by appropriately modifying the design based on the semiconductor device and method for manufacturing a semiconductor device described above as embodiments of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.

[0076] Furthermore, within the scope of the concept of the present invention, a person skilled in the art could conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of the present invention.

[0077] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0078] 10…First component, 11, 12…First and second layers, 12f…Film, 30…Silicon carbide component, 31~35…First to fifth regions, 31a, 31b…First and second partial regions, 40…Insulating component, 51~53…First to third conductive components, 81N…First nitrogen, 81O…First oxygen, 81a~81c…First to third silicon, 110, 111…Semiconductor device, D1, D2…First and second directions, SB1…Laminate, T1~T3…First to third processing, t0…Thickness, t1, t2…Thickness

Claims

1. A first treatment is performed in which the silicon carbide member is heat-treated in a first atmosphere. After the first treatment, a second treatment is performed in which the silicon carbide member is heat-treated in a second atmosphere containing nitrogen and oxygen. A first member containing silicon and oxygen is formed on the silicon carbide member after the second treatment. A third treatment is performed in which the laminate including the silicon carbide member and the first member is heat-treated in a third atmosphere containing nitrogen and oxygen. The first atmosphere contains nitrogen and oxygen, A method for manufacturing a semiconductor device, wherein the oxygen concentration in the first atmosphere is 1000 ppm or less.

2. A method for manufacturing a semiconductor device according to claim 1, wherein the first treatment is performed after treating the silicon carbide member with hydrogen.

3. The temperature of the first treatment is between 1000°C and 1500°C. The method for manufacturing a semiconductor device according to claim 2, wherein the time for the first processing is one minute or more and one hour or less.

4. The second atmosphere is composed of NO and N ２ A method for manufacturing a semiconductor device according to claim 2, comprising at least one selected from the group consisting of O.

5. The third atmosphere is NO and N ２ A method for manufacturing a semiconductor device according to claim 2, comprising at least one selected from the group consisting of O.

6. The method for manufacturing a semiconductor device according to claim 2, wherein a first conductive member is further formed on the first member after the third process.

7. The laminated body is A first layer provided between the silicon carbide member and the first member, wherein the first layer includes a bond between silicon and nitrogen, A second layer provided between the first layer and the first member, the second layer includes a bond between silicon and oxygen, and a bond between silicon and nitrogen, A method for manufacturing a semiconductor device according to claim 2, including the following:

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