Semiconductor equipment

Abstract

To provide a semiconductor device with improved characteristics. [Solution] According to the embodiment, the semiconductor device includes first to third electrodes, a first conductive member, a semiconductor member, and a first insulating member. The first conductive member includes a first conductive portion and a second conductive portion. The second conductive portion includes a first portion. The first distance between the first electrode and the first conductive portion is shorter than the second distance between the first electrode and the first portion. The semiconductor member is provided between the first electrode and the second electrode. The semiconductor member includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a first conductivity type. The first semiconductor layer includes a first partial region and a second partial region. The first partial region is located between the first electrode and the third electrode. The second partial region is located between the first electrode and the first conductive member. At least a portion of the second semiconductor layer is located between the third electrode and the first conductive portion. The second semiconductor layer is not provided between the third electrode and the second conductive portion in the second direction.

Description

Technical Field

[0001] Embodiments of the present invention relate to semiconductor devices.

Background Art

[0002] For example, in semiconductor devices, improvement in characteristics is desired.

Prior Art Documents

Patent Documents

[0003]

Patent Document ①

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present invention provide a semiconductor device capable of improving characteristics.

Means for Solving the Problems

[0005] According to embodiments of the present invention, the semiconductor device includes a first electrode, a second electrode, a third electrode, a first conductive member, a semiconductor member, and a first insulating member. The direction from the first electrode to the second electrode is along the first direction. The first conductive member is electrically connected to the second electrode. The second direction from the third electrode to at least a portion of the first conductive member intersects the first direction. The first conductive member extends along a third direction that intersects a plane including the first and second directions. The first conductive member includes a first conductive portion and a second conductive portion. The direction from the first conductive portion to the second conductive portion is along the third direction. The second conductive portion includes the first portion. The first distance along the first direction between the first electrode and the first conductive portion is shorter than the second distance along the first direction between the first electrode and the first portion. The semiconductor member is provided between the first electrode and the second electrode. The semiconductor member includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of the first conductivity type. The first semiconductor layer includes a first partial region and a second partial region. The first partial region is located between the first electrode and the third electrode in the first direction. The second partial region is located between the first electrode and the first conductive member in the first direction. The second partial region is in contact with the first conductive portion. At least a portion of the second semiconductor layer is located between the third electrode and the first conductive portion in the second direction. The second semiconductor layer is not provided between the third electrode and the second conductive portion in the second direction. The second impurity concentration of the first conductivity type in the second semiconductor layer is higher than the first impurity concentration of the first conductivity type in the first semiconductor layer. The first insulating member is provided between the third electrode and the semiconductor member. [Brief explanation of the drawing]

[0006] [Figure 1] Figures 1(a) and 1(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. [Figure 2] Figure 2 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 3] Figure 3 is a schematic plan view illustrating a semiconductor device according to the first embodiment. [Figure 4] Figures 4(a) and 4(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. [Figure 5] Figure 5 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 6] Figures 6(a) and 6(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. [Figure 7] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 8] Figures 8(a) and 8(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. [Figure 9] Figure 9 is a graph illustrating the characteristics of a semiconductor device. [Modes for carrying out the invention]

[0007] Embodiments of the present invention will be described below with reference to the drawings. Drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may be depicted differently in different drawings. In this specification and in each figure, elements similar to those described above are denoted by the same reference numerals with respect to previously shown figures, and detailed explanations are omitted as appropriate.

[0008] (First Embodiment) Figures 1(a) and 1(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. Figure 2 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. Figure 3 is a schematic plan view illustrating a semiconductor device according to the first embodiment. Figure 1(a) is a cross-sectional view taken along line A1-A2 in Figure 3. Figure 1(b) is a cross-sectional view taken along line A3-A4 in Figure 3. Figure 2 is a cross-sectional view taken along line B1-B2 in Figure 3.

[0009] As shown in FIGS. 1(a), 1(b), 2, and 3, the semiconductor device 110 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first conductive member 31, a semiconductor member 10M, and a first insulating member 41. The direction from the first electrode 51 to the second electrode 52 is along the first direction D1.

[0010] The first direction D1 is the Z-axis direction. One direction perpendicular to the Z-axis direction is the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is the Y-axis direction.

[0011] The first conductive member 31 is electrically connected to the second electrode 52. The second direction D2 from the third electrode 53 to at least a part of the first conductive member 31 intersects the first direction D1. The second direction D2 may be, for example, the X-axis direction.

[0012] As shown in FIG. 2, the first conductive member 31 extends along the third direction D3. The third direction D3 intersects the plane including the first direction D1 and the second direction D2. The third direction D3 may be, for example, the Y-axis direction.

[0013] The first conductive member 31 includes a first conductive portion 31p and a second conductive portion 31q. The direction from the first conductive portion 31p to the second conductive portion 31q is along the third direction D3.

[0014] As shown in FIG. 2, the second conductive portion 31q includes a first portion p1. Let the distance along the first direction D1 between the first electrode 51 and the first conductive portion 31p be the first distance d1. Let the distance along the first direction D1 between the first electrode 51 and the first portion p1 be the second distance d2. The first distance d1 is shorter than the second distance d_{2}.

[0015] As shown in FIGS. 1(a) and 1(b), the semiconductor member 10M is provided between a first electrode 51 and a second electrode 52. The semiconductor member 10M includes a first semiconductor layer 10 of a first conductivity type and a second semiconductor layer 20 of the first conductivity type. The first semiconductor layer 10 includes a first partial region 11 and a second partial region 12. The first partial region 11 is between the first electrode 51 and a third electrode 53 in a first direction D1. The second partial region 12 is between the first electrode 51 and a first conductive member 31 in the first direction D1. The second partial region 12 contacts a first conductive portion 31p.

[0016] At least a part of the second semiconductor layer 20 is between the third electrode 53 and the first conductive portion 31p in a second direction D2. The second semiconductor layer 20 is not provided between the third electrode 53 and a second conductive portion 31q in the second direction D2. The second impurity concentration of the first conductivity type in the second semiconductor layer 20 is higher than the first impurity concentration of the first conductivity type in the first semiconductor layer 10.

[0017] A first insulating member 41 is provided between the third electrode 53 and the semiconductor member 10M. The first insulating member 41 electrically insulates between the third electrode 53 and the semiconductor member 10M. A part of the first insulating member 41 may be provided between the third electrode 53 and the second electrode 52. The first insulating member 41 electrically insulates the third electrode 53 from the second electrode 52.

[0018] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be a potential based on the potential of the second electrode 52. The first electrode 51 functions as, for example, a drain electrode. The second electrode 52 functions as, for example, a source electrode. The third electrode 53 functions as, for example, a gate electrode. The semiconductor device 110 is, for example, a transistor.

[0019] The current flowing between the first electrode 51 and the second electrode 52 may flow through the first conductive member 31. For example, the thickness of the barrier between the semiconductor member 10M and the first conductive member 31 can be controlled by the potential of the third electrode 53. The control of the current by the potential of the third electrode 53 may be based on the control of the thickness of the barrier.

[0020] As described above, a region in which the second semiconductor layer 20 is provided and a region in which the second semiconductor layer 20 is not provided are provided. The current control described above is performed in the region in which the second semiconductor layer 20 is provided. The region in which the second semiconductor layer 20 is provided corresponds to, for example, a switching region. The region in which the second semiconductor layer 20 is not provided corresponds to, for example, a non-switching region.

[0021] In this embodiment, the second distance d2 between the second conductive portion 31q corresponding to the non-switching region and the first electrode 51 is longer than the first distance d1 between the first conductive portion 31p corresponding to the switching region and the first electrode 51. This suppresses, for example, leakage current in the non-switching region. This reduces power consumption. According to this embodiment, a semiconductor device with improved characteristics can be provided.

[0022] In one example of the embodiment, the first distance d1 in the switching region can be appropriately set to obtain good characteristics in the ON region. On the other hand, the second distance d2 in the non-switching region is appropriately set to obtain good characteristics (e.g., low leakage current) in the OFF region. In the embodiment, good OFF characteristics are obtained while maintaining good ON characteristics.

[0023] For example, in a reference example where the first distance d1 is the same as the second distance d2, it is difficult to obtain good off-characteristics while maintaining good on-characteristics. In the embodiment, a longer second distance d2 corresponding to the non-switching region makes it difficult, for example, for current leakage paths to form.

[0024] As shown in Figure 3, the semiconductor member 10M includes a cell region 18A, a termination region 18B, and an outer edge 18R. The termination region 18B is located between the cell region 18A and the outer edge 18R in a direction intersecting the first direction D1. The first conductive portion 31p is provided in the cell region 18A. The second conductive portion 31q is provided in the termination region 18B. According to this embodiment, for example, leakage current in the termination region 18B can be reduced.

[0025] As shown in Figure 2, in this example, the second thickness t2 of the first portion p1 in the first direction D1 is thinner than the first thickness t1 of the first conductive portion 31p in the first direction D1.

[0026] As shown in Figure 2, the second thickness t2 may be substantially constant. For example, the second conductive portion 31q may further include a second portion p2. The first portion p1 is located between the first conductive portion 31p and the second portion p2 in the third direction D3. In the second portion p2, the thickness of the second portion p2 may vary. The first rate of change of the second thickness t2 with respect to the change in position along the third direction D3 may be lower than the second rate of change of the second portion thickness of the second portion p2 along the first direction D1 with respect to the change in position along the third direction D3. The first distance d1 may be shorter than the second distance d2 because the second thickness t2 of the first portion p1 is thin.

[0027] For example, the ratio of the absolute value of the difference between the first thickness t1 and the second thickness t2 to the first thickness t1 can be between 0.05 and 0.8. Leakage current can be effectively reduced. The ratio can also be between 0.05 and 0.5.

[0028] In this embodiment, the first thickness t1 may be, for example, 500 nm or more and 1000 nm or less. The second thickness t2 may be, for example, 25 nm or more and 800 nm or less. The first distance d1 may be, for example, 50 μm or more and 500 μm or less. The second distance d2 may be, for example, 49 μm or more and 499 μm or less.

[0029] As shown in Figure 2, the first portion p1 has a first portion length Lp1 along the third direction D3. The second conductive portion 31q has a second conductive portion length L2 along the third direction D3. The first portion length Lp1 may be 0.5 times or more the second conductive portion length L2. Leakage current can be effectively reduced. The first portion length Lp1 may also be 0.8 times or more the second conductive portion length L2.

[0030] As shown in Figure 3, the length L1 of the first conductive portion L1 in the third direction D3 of the first conductive portion L1 is longer than the length L2 of the second conductive portion L2.

[0031] As shown in Figure 2, in this example, the first portion p1 is continuous with the first conductive portion 31p. The distance Dx1 of the first conductive member along the first direction D1 between the first electrode 51 and the first conductive member 31 may change in a stepwise manner between the first conductive portion 31p and the first portion p1.

[0032] The first distance d1 and the second distance d2 described above can be obtained, for example, by processing using an appropriate mask (e.g., etching).

[0033] As shown in Figure 1(a), a portion of the first conductive portion 31p overlaps with the third electrode 53 in the second direction D2. As shown in Figure 1(b), the second conductive portion 31q does not need to overlap with the third electrode 53 in the second direction D2.

[0034] The second conductive portion 31q is located between a part of the first semiconductor layer 10 and another part of the first semiconductor layer 10 in the second direction D2. The second conductive portion 31q may be part of a trench-type contact region.

[0035] As shown in Figure 1(a), the first semiconductor layer 10 may further include a third partial region 13. The third partial region 13 is located between the third electrode 53 and the first conductive member 31 in the second direction D2.

[0036] The second partial region 12 forms a Schottky contact with the first conductive portion 31p. For example, the thickness of the Schottky barrier may be controlled by the potential of the third electrode 53. The third partial region 13 may form a Schottky contact with the first conductive portion 31p.

[0037] The semiconductor material 10M includes, for example, at least one selected from the group consisting of silicon, SiC, GaN, GaO, and GaAs.

[0038] As shown in Figures 1(a) and 1(b), the first conductive member 31 includes a contact region 31a. The contact region 31a is in contact with the second partial region 12. The contact region 31a includes at least one selected from the group consisting of W, Ni, Co, Pt, Ir, and Au. Schottky contact is effectively obtained. The contact region 31a may be in contact with the third partial region 13.

[0039] The first conductive member 31 may include a non-contact region 31b. The contact region 31a is located between the second partial region 12 and the non-contact region 31b. The contact region 31a is located between the third partial region 13 and the non-contact region 31b. The non-contact region 31b includes at least one selected from the group consisting of Al, Cu, W, Ti, Ni, and Au. The non-contact region 31b may include, for example, at least one selected from the group consisting of AlCu and TiN. The non-contact region 31b provides, for example, low electrical resistance.

[0040] As shown in Figures 1(a) and 1(b), the semiconductor device 110 may further include a first conductive portion 61. The first conductive portion 61 is electrically connected to the second electrode 52. The first conductive portion 61 may be electrically connected to the second electrode 52 by, for example, wiring 61L.

[0041] The position of at least a portion of the first conductive portion 61 in a first direction D1 (first conductive portion position) lies between the position of the first electrode 51 in a first direction D1 (first electrode position) and the position of the third electrode 53 in a first direction D1 (third electrode position). A portion of the first insulating member 41 lies between the first conductive portion 61 and the semiconductor member 10M, and between the first conductive portion 61 and the third electrode 53. The first conductive portion 61 suppresses the concentration of the electric field. The first conductive portion 61 functions, for example, as a field plate.

[0042] For example, the first conductive portion 61 is located between the first partial region 11 and the third electrode 53 in the first direction D1.

[0043] As shown in Figures 1(a), 1(b), and 3, the semiconductor device 110 may further include a fourth electrode 54. The fourth electrode 54 is provided in the terminal region 18B. The direction from the fourth electrode 54 to the third electrode 53 intersects with the first direction D1.

[0044] For example, multiple third electrodes 53 may be provided. Multiple third electrodes 53 are arranged along the second direction D2. Multiple third electrodes 53 extend along the third direction D3. Multiple first conductive members 31 may be provided. Multiple first conductive members 31 are arranged along the second direction D2. Multiple first conductive members 31 extend along the third direction D3.

[0045] In the semiconductor device 110, one of the plurality of third electrodes 53 is located between one of the plurality of first conductive members 31 and another of the plurality of first conductive members 31. One of the plurality of first conductive members 31 is located between one of the plurality of third electrodes 53 and another of the plurality of third electrodes 53.

[0046] Figures 4(a) and 4(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. Figure 5 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. Figure 4(a) is a cross-sectional view corresponding to line A1-A2 in Figure 3. Figure 4(b) is a cross-sectional view corresponding to line A3-A4 in Figure 3. Figure 5 is a cross-sectional view corresponding to line B1-B2 in Figure 3.

[0047] As shown in Figures 4(a), 4(b), and 5, in the semiconductor device 111 according to the embodiment, the second conductive portion 31q does not overlap with the first semiconductor layer 10 in the second direction D2. The configuration of the semiconductor device 111, excluding this portion, may be the same as that of the semiconductor device 110. In the semiconductor device 111 as well, the first distance d1 is shorter than the second distance d2. For example, leakage current is suppressed. A semiconductor device with improved characteristics can be provided.

[0048] Figures 6(a) and 6(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. Figure 6(a) is a cross-sectional view corresponding to the line A1-A2 in Figure 3. Figure 6(b) is a cross-sectional view corresponding to the line A3-A4 in Figure 3. As shown in Figures 6(a) and 6(b), in the semiconductor device 112 according to the embodiment, a part of the second conductive portion 31q overlaps with the third electrode 53 in the second direction D2. The configuration of the semiconductor device 112, excluding this overlap, can be the same as that of the semiconductor device 110. In the semiconductor device 112 as well, the first distance d1 is shorter than the second distance d2. For example, leakage current is suppressed. A semiconductor device with improved characteristics can be provided.

[0049] As shown in Figure 6(a), the length of the portion of the first conductive portion 31p that overlaps with the third electrode 53 in the second direction D2 along the first direction D1 is defined as the first length Lz1. As shown in Figure 6(b), the length of the portion of the second conductive portion 31q that overlaps with the third electrode 53 in the second direction D2 along the first direction D1 is defined as the second length Lz2. The first length Lz1 is longer than the second length Lz2.

[0050] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. Figure 7 is a cross-sectional view corresponding to the line B1-B2 in Figure 3. As shown in Figure 7, in the semiconductor device 113 according to the embodiment, the second thickness t2 of the first portion p1 in the first direction D1 decreases along the direction from the first conductive portion 31p to the second conductive portion 31q. The configuration of the semiconductor device 113, excluding this, may be the same as that of the semiconductor device 110.

[0051] In at least a portion of the first portion p1, the ratio of the absolute value of the difference between the first thickness t1 and the second thickness t2 to the first thickness t1 is 0.1 or greater. This at least portion of the first portion p1 has a first portion length Lp1 along the third direction D3. The second conductive portion 31q has a second conductive portion length L2 along the third direction D3. The first portion length Lp1 is 0.5 times or greater than the second conductive portion length L2.

[0052] In a semiconductor device 113 having such a first thickness t1 and second thickness t2, the first distance d1 is shorter than the second distance d2. For example, leakage current is suppressed. A semiconductor device with improved characteristics can be provided.

[0053] Figures 8(a) and 8(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. Figure 8(a) is a cross-sectional view corresponding to line A1-A2 in Figure 3. Figure 8(b) is a cross-sectional view corresponding to line A3-A4 in Figure 3.

[0054] As shown in Figures 8(a) and 8(b), the semiconductor device 114 according to this embodiment further includes another third electrode 53A. The configuration of the semiconductor device 114, excluding this electrode, may be the same as that of the semiconductor device 110.

[0055] For example, the third electrode 53 is located between the other third electrode 53A and the first conductive member 31 in the second direction D2. In the semiconductor device 114, the first distance d1 is shorter than the second distance d2. For example, leakage current is suppressed. A semiconductor device with improved characteristics can be provided.

[0056] Figure 9 is a graph illustrating the characteristics of a semiconductor device. Figure 9 illustrates the simulation results of the characteristics of the semiconductor device 112 described above when the second length Lz2 is changed. The vertical axis in Figure 9 is the length ratio R1. The length ratio R1 is the ratio of the second length Lz2 to the first length Lz1 (Lz2 / Lz1) (see Figures 6(a) and 6(b)). When the length ratio R1 is 1, the depth of the second conductive portion 31q is the same as the depth of the first conductive portion 31p. The vertical axis is the leakage current parameter P1. The leakage current parameter P1 is normalized by the leakage current when the length ratio R1 is 1. It is preferable that the leakage current parameter P1 is small.

[0057] As shown in Figure 9, a small leakage current parameter P1 is obtained when the length ratio R1 is 0.8 or less. This change is critical. In the embodiment, the length ratio R1 is preferably 0.625 or less. The length ratio R1 is more preferably 0.6 or less. The length ratio R1 may be 0 or greater.

[0058] In this embodiment, the first conductivity type is either n-type or p-type. The first conductivity type may be, for example, n-type. The impurity concentration of the first conductivity type in the first semiconductor layer 10 is, for example, 1 × 10⁻⁶ 15 cm -3 The above is 1 x 10 17 cm -3 The following is acceptable. The impurity concentration of the first conductivity type in the second semiconductor layer 20 is, for example, 1 × 10 18 cm -3 The above is 1 x 10 21 cm -3 The following is fine.

[0059] In the embodiment, at least one of the first electrode 51 and the second electrode 52 may contain a metal. The metal may include, for example, at least one selected from the group consisting of Al, Ti, Ni, Au, Ag, and Cu. At least one of the third electrode 53 and the fourth electrode 54 may contain polysilicon.

[0060] In the embodiment, information regarding the shape of the nitride region can be obtained, for example, by electron microscope images. Information regarding composition and elemental concentration can be obtained, for example, by EDX (Energy Dispersive X-ray Spectroscopy) or SIMS (Secondary Ion Mass Spectrometry). Information regarding composition may also be obtained, for example, by reciprocal lattice space mapping.

[0061] The embodiments may include the following technical proposals. (Technical proposal 1) First electrode and, The second electrode is such that the direction from the first electrode to the second electrode is along the first direction, The third electrode and A first conductive member electrically connected to the second electrode, wherein a second direction from the third electrode to at least a portion of the first conductive member intersects the first direction, the first conductive member extends along a third direction intersecting a plane including the first and second directions, the first conductive member includes a first conductive portion and a second conductive portion, the direction from the first conductive portion to the second conductive portion is along the third direction, the second conductive portion includes a first portion, and the first distance along the first direction between the first electrode and the first conductive portion is shorter than the second distance along the first direction between the first electrode and the first portion, A semiconductor member provided between the first electrode and the second electrode, wherein the semiconductor member includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of the first conductivity type, the first semiconductor layer includes a first partial region and a second partial region, the first partial region is located between the first electrode and the third electrode in the first direction, the second partial region is located between the first electrode and the first conductive member in the first direction, the second partial region is in contact with the first conductive portion, at least a part of the second semiconductor layer is located between the third electrode and the first conductive portion in the second direction, the second semiconductor layer is not provided between the third electrode and the second conductive portion in the second direction, and the second impurity concentration of the first conductivity type in the second semiconductor layer is higher than the first impurity concentration of the first conductivity type in the first semiconductor layer, A first insulating member is provided between the third electrode and the semiconductor member, A semiconductor device equipped with [the necessary components].

[0062] (Technical proposal 2) The semiconductor member includes a cell region, a terminal region, and an outer edge. The terminal region is located between the cell region and the outer edge in a direction intersecting the first direction. The first conductive portion is provided in the cell region, The semiconductor device according to Technical Proposal 1, wherein the second conductive portion is provided in the terminal region.

[0063] (Technical proposal 3) The semiconductor device according to Technical Proposal 1 or 2, wherein the second thickness of the first portion in the first direction is thinner than the first thickness of the first conductive portion in the first direction.

[0064] (Technical proposal 4) The second conductive portion further includes the second portion, The first portion is located between the first conductive portion and the second portion in the third direction. The semiconductor device according to Technical Proposal 3, wherein the first rate of change with respect to the change in position of the second thickness along the third direction is lower than the second rate of change with respect to the change in position of the second portion thickness along the first direction along the third direction.

[0065] (Technical proposal 5) The semiconductor device according to Technical Proposal 3, wherein the second thickness is substantially constant.

[0066] (Technical proposal 6) A semiconductor device according to any one of Technical Proposals 3 to 5, wherein the ratio of the absolute value of the difference between the first thickness and the second thickness to the first thickness is 0.05 or more and 0.8 or less.

[0067] (Technical proposal 7) The first portion has a first portion length along the third direction, The second conductive portion has a second conductive portion length along the third direction, A semiconductor device according to any one of Technical Proposals 3 to 6, wherein the length of the first portion is 0.5 times or more the length of the second conductive portion.

[0068] (Technical proposal 8) The semiconductor device according to Technical Proposal 7, wherein the length of the first conductive portion in the third direction of the first conductive portion is longer than the length of the second conductive portion.

[0069] (Technical proposal 9) The second thickness decreases along the direction from the first conductive portion to the second conductive portion. In at least a portion of the first part, the ratio of the absolute value of the difference between the first thickness and the second thickness to the first thickness is 0.1 or greater. At least a portion of the first portion has a first portion length along the third direction, The second conductive portion has a second conductive portion length along the third direction, The semiconductor device according to Technical Proposal 3, wherein the length of the first portion is 0.5 times or more the length of the second conductive portion.

[0070] (Technical proposal 10) The first portion is continuous with the first conductive portion, The semiconductor device according to any one of Technical Proposals 3 to 9, wherein the distance between the first electrode and the first conductive member along the first direction varies in a step-like manner between the first conductive portion and the first portion.

[0071] (Technical proposal 11) The semiconductor device according to any one of the technical proposals 1 to 10, wherein the second conductive portion does not overlap with the third electrode in the second direction.

[0072] (Technical proposal 12) The semiconductor device according to any one of the technical proposals 1 to 10, wherein the second conductive portion is located between a part of the first semiconductor layer and another part of the first semiconductor layer in the second direction.

[0073] (Technical proposal 13) The semiconductor device according to any one of the technical proposals 1 to 10, wherein the second conductive portion does not overlap with the first semiconductor layer in the second direction.

[0074] (Technical proposal 14) The semiconductor device according to any one of the technical proposals 1 to 13, wherein the second sub-region forms a Schottky contact with the first conductive portion.

[0075] (Technical proposal 15) The semiconductor device according to any one of the technical proposals 1 to 14, wherein the semiconductor material includes at least one selected from the group consisting of silicon, SiC, GaN, GaO, and GaAs.

[0076] (Technical proposal 16) The first conductive member includes a contact area, The semiconductor device according to Technical Proposal 15, wherein the contact region is in contact with the second partial region, and the contact region includes at least one selected from the group consisting of W, Ni, Co, Pt, Ir, and Au.

[0077] (Technical proposal 17) The first conductive member includes a non-contact area, The contact region is located between the second partial region and the non-contact region. The semiconductor device according to Technical Proposal 16, wherein the non-contact region includes at least one selected from the group consisting of Al, Cu, W, Ti, Ni, and Au.

[0078] (Technical proposal 18) The third electrode extends along the third direction, as described in any one of the Technical Examples 1 to 17.

[0079] (Technical proposal 19) The first conductive part is further electrically connected to the second electrode, The position of the first conductive portion in the first direction of at least a portion of the first conductive portion is between the first electrode position of the first electrode in the first direction and the third electrode position of the third electrode in the first direction. A semiconductor device according to any one of Technical Proposals 1 to 18, wherein a part of the first insulating member is located between the first conductive portion and the semiconductor member, and between the first conductive portion and the third electrode.

[0080] (Technical proposal 20) The ratio of the second length to the first length is 0.625 or less. The first length is the length of the portion of the first conductive portion that overlaps with the third electrode in the second direction, along the first direction. The semiconductor device according to any one of Technical Proposals 1 to 19, wherein the second length is the length of the portion of the second conductive portion that overlaps with the third electrode in the second direction along the first direction.

[0081] According to the embodiment, a semiconductor device capable of improving characteristics is provided.

[0082] Embodiments of the present invention have been described above with reference to examples. However, the present invention is not limited to these examples. For example, the specific configuration of each element included in a semiconductor device, such as electrodes, conductive parts, semiconductor members, semiconductor regions, conductive members, and insulating members, is included within the scope of the present invention as long as those skilled in the art can appropriately select from the known range to implement the present invention and obtain similar effects.

[0083] Combinations of two or more elements from each example, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the invention.

[0084] All semiconductor devices that a person skilled in the art can implement by appropriately modifying the design based on the semiconductor device described above as an embodiment of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.

[0085] Within the scope of the concept of this invention, a person skilled in the art would be able to conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of this invention.

[0086] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0087] 10, 20: First and second semiconductor layers, 10M: Semiconductor material, 11-13: First to third partial regions, 18A: Cell region, 18B: Termination region, 18R: Outer edge, 20: Second semiconductor layer, 31: First conductive material, 31a: Contact region, 31b: Non-contact region, 31p, 31q: First and second conductive portions, 41: First insulating material, 51-54: First to fourth electrodes, 53A: Other third electrode, 61: First conductive portion, 61L: Wiring, 110-114: Semiconductor device, D1-D3: First to third directions, Dx1: Distance between first conductive materials, L1, L2: Lengths of first and second conductive portions, Lp1: Length of first portion, Lz1, Lz2: Lengths of first and second lengths, P1: Leakage current parameter, R1: length ratio, d1, d2: first and second distances, p1, p2: first and second parts, t1, t2: first and second thicknesses

Claims

1. First electrode and The second electrode is such that the direction from the first electrode to the second electrode is along the first direction, The third electrode and A first conductive member electrically connected to the second electrode, wherein a second direction from the third electrode to at least a portion of the first conductive member intersects the first direction, the first conductive member extends along a third direction intersecting a plane including the first and second directions, the first conductive member includes a first conductive portion and a second conductive portion, the direction from the first conductive portion to the second conductive portion is along the third direction, the second conductive portion includes a first portion, and the first distance along the first direction between the first electrode and the first conductive portion is shorter than the second distance along the first direction between the first electrode and the first portion, A semiconductor member provided between the first electrode and the second electrode, wherein the semiconductor member includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of the first conductivity type, the first semiconductor layer includes a first partial region and a second partial region, the first partial region is located between the first electrode and the third electrode in the first direction, the second partial region is located between the first electrode and the first conductive member in the first direction, the second partial region is in contact with the first conductive portion, at least a part of the second semiconductor layer is located between the third electrode and the first conductive portion in the second direction, the second semiconductor layer is not provided between the third electrode and the second conductive portion in the second direction, and the second impurity concentration of the first conductivity type in the second semiconductor layer is higher than the first impurity concentration of the first conductivity type in the first semiconductor layer, A first insulating member is provided between the third electrode and the semiconductor member, A semiconductor device equipped with [the necessary components].

2. The semiconductor member includes a cell region, a terminal region, and an outer edge. The terminal region is located between the cell region and the outer edge in a direction intersecting the first direction. The first conductive portion is provided in the cell region, The semiconductor device according to claim 1, wherein the second conductive portion is provided in the terminal region.

3. The semiconductor device according to claim 1, wherein the second thickness of the first portion in the first direction is thinner than the first thickness of the first conductive portion in the first direction.

4. The second conductive portion further includes the second portion, The first portion is located between the first conductive portion and the second portion in the third direction. The semiconductor device according to claim 3, wherein the first rate of change with respect to the change in position of the second thickness along the third direction is lower than the second rate of change with respect to the change in position of the second portion thickness along the first direction along the third direction.

5. The semiconductor device according to claim 3, wherein the second thickness is substantially constant.

6. The semiconductor device according to claim 3, wherein the ratio of the absolute value of the difference between the first thickness and the second thickness to the first thickness is 0.05 or more and 0.8 or less.

7. The first portion has a first portion length along the third direction, The second conductive portion has a second conductive portion length along the third direction, The semiconductor device according to claim 3, wherein the length of the first portion is 0.5 times or more the length of the second conductive portion.

8. The semiconductor device according to claim 7, wherein the length of the first conductive portion in the third direction of the first conductive portion is longer than the length of the second conductive portion.

9. The second thickness decreases along the direction from the first conductive portion to the second conductive portion. In at least a portion of the first part, the ratio of the absolute value of the difference between the first thickness and the second thickness to the first thickness is 0.1 or greater. At least a portion of the first portion has a first portion length along the third direction, The second conductive portion has a second conductive portion length along the third direction, The semiconductor device according to claim 3, wherein the length of the first portion is 0.5 times or more the length of the second conductive portion.

10. The first portion is continuous with the first conductive portion, The semiconductor device according to claim 3, wherein the distance of the first conductive member along the first direction between the first electrode and the first conductive member changes in a step-like manner between the first conductive portion and the first portion.

11. The semiconductor device according to any one of claims 1 to 3, wherein the second conductive portion does not overlap with the third electrode in the second direction.

12. The semiconductor device according to any one of claims 1 to 3, wherein the second conductive portion is located between a part of the first semiconductor layer and another part of the first semiconductor layer in the second direction.

13. The semiconductor device according to any one of claims 1 to 3, wherein the second conductive portion does not overlap with the first semiconductor layer in the second direction.

14. The semiconductor device according to any one of claims 1 to 3, wherein the second partial region forms a Schottky contact with the first conductive portion.

15. The semiconductor device according to any one of claims 1 to 3, wherein the semiconductor material comprises at least one selected from the group consisting of silicon, SiC, GaN, GaO, and GaAs.

16. The first conductive member includes a contact area, The semiconductor device according to claim 15, wherein the contact region is in contact with the second partial region, and the contact region includes at least one selected from the group consisting of W, Ni, Co, Pt, Ir, and Au.

17. The first conductive member includes a non-contact area, The contact region is located between the second partial region and the non-contact region. The semiconductor device according to claim 16, wherein the non-contact region includes at least one selected from the group consisting of Al, Cu, W, Ti, Ni, and Au.

18. The semiconductor device according to any one of claims 1 to 3, wherein the third electrode extends along the third direction.

19. The first conductive part is further electrically connected to the second electrode, The position of the first conductive portion in the first direction of at least a portion of the first conductive portion is between the first electrode position of the first electrode in the first direction and the third electrode position of the third electrode in the first direction. A semiconductor device according to any one of claims 1 to 3, wherein a part of the first insulating member is located between the first conductive portion and the semiconductor member, and between the first conductive portion and the third electrode.

20. The ratio of the second length to the first length is 0.625 or less. The first length is the length of the portion of the first conductive portion that overlaps with the third electrode in the second direction, along the first direction. The semiconductor device according to any one of claims 1 to 3, wherein the second length is the length of the portion of the second conductive portion that overlaps with the third electrode in the second direction along the first direction.

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