CVD film formation equipment

Abstract

To provide a CVD film deposition apparatus that can promote film deposition on inner surfaces, which are difficult to deposit films on. [Solution] A CVD film deposition apparatus comprising a vacuum chamber containing an object to be film-deposited, a gas introduction unit for introducing a raw material gas into an inner space formed by the wall portion of the object to be film-deposited, a cathode electrode positioned outside the wall portion to which high-frequency power is supplied, and an anode electrode positioned in the inner space, wherein a film is deposited on the inner surface of the wall portion in contact with the inner space by plasma CVD under predetermined vacuum conditions by introducing the raw material gas into the inner space and supplying the high-frequency power, wherein a magnet is placed on a part of the outside of the wall portion corresponding to a part of the inner space to generate a stronger magnetic field in a part of the inner space than in other parts, and the inner surface is film-deposited in that state.

Description

Technical Field

[0001] The present invention relates to a CVD film forming apparatus.

Background Art

[0002] There are many known techniques for forming a film on a resin member using the plasma CVD method. For example, in Patent Document 1 below, when forming a DLC film on the inner surface of a resin container such as a plastic bottle, a CVD film forming apparatus capable of controlling the flow rate of a source gas introduced into the container at a constant rate in a short time has been proposed. In this document, an external electrode is arranged so as to surround the outside of the container, an internal electrode is arranged inside the container, and a source gas is flowed into the container and high-frequency power is supplied to form a film on the inner surface of the container.

[0003] Also, in Patent Document 2 below, a CVD film forming apparatus for forming a DLC film or a SiO2 film having light shielding properties against ultraviolet rays and transparency has been proposed. In this document, an outer peripheral electrode is arranged so as to surround the outer surface of the container, and a DLC film or a SiO2 film is formed on the outer surface of the container by the plasma CVD method while supplying a starting material to the outer surface of the container.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, in a conventional CVD film forming apparatus, there may be a portion on the container wall where it is difficult to form a film. In particular, in the CVD film deposition apparatus shown in Patent Document 1, the object to be deposited has a hollow main body with an open top and a hollow handle portion provided by connecting both ends of the main body, with both ends opening into the main body. The apparatus includes a vacuum chamber in which the object to be deposited is placed, a cathode electrode located at the bottom of the object to be deposited and an anode electrode inserted into the main body, connected to a high-frequency power supply, and a gas introduction unit for introducing raw material gas into the inside of the object to be deposited.

[0006] To deposit a thin film such as a DLC film on the inner surface of an object using plasma CVD with such a conventional CVD deposition apparatus, first, a gas introduction unit is inserted into the main body of the object to be deposited and set in a vacuum chamber. Then, under predetermined vacuum conditions, a raw material gas is introduced and high-frequency power is supplied to the cathode electrode to generate plasma inside the object to be deposited and deposit the film.

[0007] When a thin film is deposited on the inner surface of the object to be coated in this manner, it became clear that the thin film is less likely to form on the inner surface of the hollow handle compared to the inner surface of the main body, and that it is impossible to deposit a film on the inner surface of the handle. This phenomenon occurs with various objects to be coated, and it was found that some inner surfaces of the object to be coated were more difficult to coat than other inner surfaces.

[0008] Therefore, the object of the present invention is to provide a CVD film deposition apparatus that can promote film deposition on the inner surface of a wall portion, which is difficult to deposit film on. [Means for solving the problem]

[0009] The present invention, which solves the above problems, comprises a vacuum chamber in which a film to be deposited is contained, a gas introduction unit for introducing a raw material gas into an inner space formed by the wall portion of the film to be deposited, a cathode electrode arranged outside the wall portion to which high-frequency power is supplied, and an anode electrode arranged in the inner space. In a CVD film deposition apparatus that deposits a film on the inner surface in contact with the inner space of the wall portion by plasma CVD by introducing a raw material gas into the inner space and supplying high-frequency power under predetermined vacuum conditions, the present invention is characterized in that a magnet is placed on a part of the outside of the wall portion corresponding to a part of the inner space to generate a stronger magnetic field in a part of the inner space than in other parts, thereby depositing a film on the inner surface.

[0010] According to the CVD deposition apparatus of the present invention, by placing a magnet on a part of the outer surface of the wall corresponding to a part of the inner space, a stronger magnetic field can be formed in a part of the inner space than in other parts, thereby enabling film deposition. This promotes film deposition on the inner surface of the wall corresponding to a part of the inner space, for example, by attracting electrons in the plasma to a part of the inner space due to the magnetic force, causing the raw material gas to ionize, and the ionized raw material to be attracted to the inner surface of the wall and deposited. As a result, even if there is an inner surface of a part of the wall that is difficult to deposit film on, the CVD deposition apparatus can be provided that can promote film deposition in that area.

[0011] In the CVD film deposition apparatus of the present invention, the wall portion is provided to surround the inner space, and magnets may be arranged around the outer perimeter of the wall portion. In this way, film formation can be promoted even on the inner surface of a portion of the inner space surrounded by walls.

[0012] In that case, it is preferable that the magnets be arranged at multiple positions on either side of a portion of the inner space around the outer perimeter of the wall. In this way, even within the inner space surrounded by walls, a strong magnetic field can be concentrated and generated in a specific area, thereby more reliably promoting film deposition on the inner surface of the walls.

[0013] Furthermore, the wall portion may include a first wall portion surrounding a first inner space where the gas introduction portion is located, and a second wall portion surrounding a second inner space that has a smaller cross-sectional shape than the first inner space and is continuous with the first inner space, and the magnet may be arranged around the outer perimeter of the second wall portion. In this way, even if the second inner space is narrower than the first inner space, a film can be reliably formed inside the second wall surrounding the second inner space.

[0014] For example, the object to be film-deposited is a container, which has a container body formed by a first wall and a handle formed by a second wall and connected to the container body at both ends, and the second inner space of the handle may be continuous with the first inner space at both ends. This allows for reliable film formation even on the inner surface of the handle portion, which is significantly thinner than the container body. [Effects of the Invention]

[0015] The present invention provides a CVD film deposition apparatus that can promote film deposition on the inner surface of a wall portion, which is difficult to deposit film on. [Brief explanation of the drawing]

[0016] [Figure 1] Figure 1(a) is a side view of a container with a handle, which is the object to be coated in an embodiment of the present invention, and Figure 1(b) is a longitudinal cross-sectional view of the container with a handle, which is the object to be coated in an embodiment of the present invention. [Figure 2] This is a schematic diagram showing the configuration of a CVD film deposition apparatus in an embodiment of the present invention. [Figure 3] This is a front view showing the spatial electrode attached to the handle. [Figure 4] This is a side view showing the spatial electrode attached to the handle. [Figure 5] This is a side view showing the installation state of the magnets placed on the handle. [Figure 6] This diagram illustrates how electrons are attracted into the handle by magnetic force. [Figure 7]It is a schematic diagram showing the configuration of the CDV film forming apparatus used in the embodiment.

Mode for Carrying Out the Invention

[0017] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, the film formation target that can be formed by the CVD film forming apparatus of the present embodiment is a member in which an inner space is formed by a concave wall portion, and may be various containers in which the inner space is surrounded by the wall portion.

[0018] In the present embodiment, an example of the container 100 with a handle shown in FIGS. 1(a) and 1(b) is used. The container 100 with a handle has a container main body portion 101 and a handle portion 102 provided at a position where a part of the upper portion of the container main body portion 101 is recessed. This container 100 with a handle is a resin container such as polyethylene, polypropylene, polystyrene, PET resin, etc., and the whole including the container main body portion 101 and the handle portion 102 is integrally formed of resin. The container main body portion 101 is formed by the continuous formation of the bottom and the side periphery by the first wall portion 103, and an opening portion 104 is provided at the upper portion. The first inner space 105 is formed by being surrounded by the first wall portion 103 on the inside.

[0019] The handle portion 102 is formed in a hollow shape with a substantially constant thickness by the second wall portion 106 connected to the first wall portion 103 of the container main body portion 101 at both the upper and lower ends and the second wall portion 106a facing each other. A through opening portion 107 for inserting a finger when a user grips is provided between the handle portion 102 and the container main body portion 101. The second inner space 108 is formed by being surrounded by the second wall portion 106 over the entire length on the inside. The second inner space 108 opens to the first inner space 105 of the container main body portion 101 at both the upper and lower ends and is continuous with the first inner space 105 at both the upper and lower ends. In the container 100 with a handle of the present embodiment, the first inner space 105 and the second inner space 108 are continuously formed to form one inner space.

[0020] The cross-sectional shape of the second inner space 108 of the handle portion 7b is smaller than the cross-sectional shape of the first inner space 105 of the container body portion 101, but the size of the cross-sectional shape is not particularly limited.

[0021] The CVD deposition apparatus of this embodiment is an apparatus that deposits a film on the inner surface of the wall portion in contact with the inner space of the object to be deposited using the plasma CVD method. This embodiment is an example of an apparatus that deposits DLC (diamond-like carbon), silicon oxide film, etc., on the inner surface of a container 100 with a handle, which is the object to be deposited. In this embodiment, the object to be coated is a container with a handle molded from synthetic resin, but the object to be coated is not limited to this; the container material may also be metal or ceramic, and if a magnet is used as described later, a non-magnetic or weakly magnetic material is preferable. Furthermore, regarding the shape of the container, it is not limited to containers with handles; any container with a shape in which one part is narrower than the rest of the interior space can be used for film deposition.

[0022] Figure 2 shows the configuration of the CVD film deposition apparatus according to this embodiment. As shown in Figure 2, the CVD film deposition apparatus includes a vacuum chamber 200 in which the handle container 100 is housed, a gas introduction unit 201 for introducing raw material gas into the first and second inner spaces 105 and 108 of the handle container 100, a cathode electrode 203 positioned on the outside of the handle container 100, and an anode electrode 204 inserted into the inside of the handle container 200.

[0023] The vacuum chamber 200 in this embodiment is airtightly constructed with a conductive lid 205, an insulating member 206, and a cathode electrode 203. The lid 205, insulating member 204, and cathode electrode 203, which are formed as separate components from the vacuum chamber 200, may be housed within the airtight vacuum chamber 200, but in this embodiment, the configuration of these components is simplified.

[0024] The cathode electrode 203 consists of an upper electrode 207 and a lower electrode 208, and is detachably attached between the upper electrode 207 and the lower electrode 208 with an O-ring 209 sealing the inside. The cathode electrode 203 is made of, for example, aluminum.

[0025] The upper electrode 207 is shaped to cover the outer shape of the container body 101, and around the handle portion 102, a separate space electrode 300 is attached, which covers the entire outer shape of the container body 101.

[0026] Next, the configuration of the spatial electrode 300 will be described. Figure 3 is a front view showing the spatial electrode attached to the container body, and Figure 4 is a side view showing the spatial electrode attached to the container body. The spatial electrode 300 is shaped to cover the entire handle portion 102 and a part of the container body portion 101 that is connected to the handle portion 102, by being attached to the handle portion 102 formed on the container body portion 101. As shown in the figure, the spatial electrode 300 is configured to be attachable to the handle portion 102 by combining two separate parts 301 and 302, which are divided into left and right sections, to match the shape of the handle portion 102. The divided parts 301 and 302 each have shapes corresponding to a part of the first wall of the container body 101, the outer circumference of the handle 102, and the through opening 107, and are mounted with a certain distance between their opposing surfaces. The spatial electrode 300 can be attached to the container body 101 by combining a pair of divided parts 301 and 302 so as to sandwich the handle portion 102 from both the left and right sides, and fastening them with fasteners (not shown). In this embodiment, since the object to be film-deposited is a container with a handle 100, the spatial electrode 300 is configured to match the shape of the handle portion 102 of the container with a handle 100. However, the shape of the spatial electrode 300 can be appropriately changed depending on the shape of the object to be film-deposited.

[0027] On the other hand, except for the area around the handle portion 102 and the through-opening 107 of the container 100 with the upper electrode 207, an upper storage space is provided that has a shape roughly corresponding to the outer circumference shape of the first wall portion 103 of the container body portion 101. When attaching the divided parts 301 and 302 to the handle portion 102, magnets, as described later, are placed on the opposing parts of the divided parts 301 and 302.

[0028] In this type of upper electrode 207, the space electrode 300 is fixed to the through-opening 107 of the container with a handle by inserting a pair of divided parts 301 and 302 into the through-opening 107 of the container with a handle and fastening them together. The upper side of the container with a handle 100 is then inserted into the upper storage space formed by the upper electrode 207, thereby allowing the upper electrode 207 to be attached to the container with a handle 100. At this time, the spatial electrode 300 attached to the container 100 with a handle is positioned in contact with the upper electrode 207 on its outer surface and is electrically connected to it.

[0029] The lower electrode 208 is provided with a lower storage space for accommodating the lower part of the container 100 with a handle, specifically the lower part that is not accommodated in the upper storage space formed by the upper electrode 207. The lower electrode 208 is configured to be openable and closable relative to the upper electrode 207. The lower electrode 208 is configured to open and close relative to the upper electrode 207. With the lower electrode 208 open, the upper part of the container 100 with a handle is housed in the upper housing space of the upper electrode 207, and by combining and fixing the lower electrode 208 to the upper electrode 207, the entire container 100 with a handle can be housed in the housing space of the cathode electrode 203, and the outer perimeter of the container 100 with a handle can be surrounded by the cathode electrode 203.

[0030] A high-frequency power supply (RF power supply) 211 is connected to the cathode electrode 203 via a matching box 210, and this RF power supply 211 is grounded. In this embodiment, the RF power supply 211 is connected to the lower electrode 208, and the lower electrode 208 and the upper electrode 207 are electrically connected.

[0031] Next, we will explain the magnets installed on the handles of containers with handles. Figure 5 is a side view showing the installation of the magnets on the handle. Note that the spatial electrodes have been omitted in Figure 5 to make the magnet installation easier to understand.

[0032] In the CVD film deposition apparatus of this embodiment, as shown in Figure 5, in order to generate a stronger magnetic field in the second inner space 108 than in the first inner space 105 near the handle portion 102, a first magnet 400 is placed outside the second wall 106 corresponding to the second inner space 108, and a second magnet 401 is placed inside the through-opening 107. In this embodiment, the first magnet 400 and the second magnet 401 are arranged in combination with the upper electrode 207 and the space electrode 300.

[0033] The first magnet 400 and the second magnet 401 can be in various shapes, such as cylindrical, rod-shaped, or prismatic. The first magnet 400 is positioned vertically along the longitudinal direction of the handle portion 102, around the outer circumference of the second wall portion 106 of the upper electrode 207, and both magnetic poles of the second magnet 401 are positioned along the longitudinal direction of the handle portion 102. By directing the magnetic flux along the longitudinal direction of the handle portion 102, it becomes possible to obtain a wide-area effect of attracting electrons into the second inner space 108. On the other hand, the second magnet 401 is fixed in the position of the through-opening 107 by being sandwiched between the divided parts 301 and 302 when the spatial electrode 300 is attached to the handle portion 102.

[0034] In this embodiment, the first magnet 400 and the second magnet 401 are arranged around the outer circumference of the handle portion 102. As shown in Figure 5, there is one magnet 400 and one magnet 401 on the upper electrode 207 side and one on the space electrode 300 side, but multiple magnets may be placed on each side, and the number of magnets placed on each side may differ. Furthermore, the lengths of the first magnet 400 and the second magnet 401 may be the same or different, and if multiple magnets 400 and 401 are arranged, they may all be of the same length or a combination of magnets of different lengths.

[0035] Furthermore, the orientation of the magnetic poles of the first magnet 400 and the second magnet 401 may be the same direction or opposite directions. Also, when multiple magnets 400 and 401 are arranged, the orientation of the magnetic poles of the multiple magnets may be aligned in the same direction or alternate.

[0036] Next, returning to Figure 2, the anode electrode 204 is provided together with the gas introduction section 201 and the lid 205 that constitutes the vacuum chamber 200. The lid portion 205 is made of a conductive metal and has a space inside. The lid portion 205 is airtightly joined to the upper electrode 207 with an insulating member 206 in between, and the lid portion 205 is grounded. An opening is provided in the end face of the lid portion 205 on the side of the insulating member 206, and in the insulating member 206. The space inside the lid portion 205 is continuous with the housing space inside the anode electrode 203 through this opening.

[0037] A tubular anode electrode 204 is fixedly mounted on the lid portion 205. The tubular anode electrode 204 is made of a conductive metal and is electrically connected to the lid portion 205. The anode electrode 204 is provided so as to protrude from the top of the lid 205, through the space inside the lid 205, and through the opening between the lid 205 and the insulating member 206, to the space where the anode electrode 204 is housed. When attached to the container with handle 100, the tip of the anode electrode 204 is positioned in the first inner space 105 surrounded by the first wall portion 103 of the container with handle 100. The anode electrode 204 is also grounded via the lid 205.

[0038] As shown in Figure 2, the gas introduction section 201 is composed of a tubular anode electrode 204. A gas outlet 201a is provided at the tip of the tubular anode electrode 204. The gas introduction section 201 is configured to introduce the raw material gas supplied from the raw material gas supply section 210 into the first inner space 105 and the second inner space 108 of the container with handle 100.

[0039] A raw material gas supply unit 210 is connected to the gas inlet 201. A raw material gas source 210a and a mass flow controller 210b of the raw material gas supply unit 210 are connected to the base end of the gas inlet 210 via a three-way valve 211. The raw material gas source 210a generates the raw material gas. The raw material gas has, for example, at least one hydrocarbon of a chain hydrocarbon and a cyclic hydrocarbon. In the case of a chain hydrocarbon, it may be one or more hydrocarbons selected from the group of methane, ethane, acetylene, propane, and butane. In the case of a cyclic hydrocarbon, it may be at least one hydrocarbon of benzene and toluene. Furthermore, the three-way valve 211 is connected to a venting vacuum pump 213 via a vacuum valve 212. The venting vacuum pump 213 can reduce the pressure inside the vacuum chamber 200, including the inside of the container body 100, to achieve predetermined vacuum conditions.

[0040] The raw material gas supply unit 210 can supply raw material gas from the gas introduction unit 210 into the first inner space 105 of the container 11 with a handle by flowing the raw material gas in the direction of arrow A and exhausting it when the inner surface of the container 100 with a handle is not being coated, and by flowing the raw material gas in the direction of arrow B when the inner surface of the container 100 with a handle is being coated.

[0041] A flow vacuum pump 215 is connected to the space inside the lid 205 via a vacuum valve 214. The vacuum chamber 200 is maintained under predetermined vacuum conditions by introducing raw material gas from the gas inlet 201 and exhausting it with the flow vacuum pump 215. Furthermore, the space inside the lid 205 is configured to be vented to the atmosphere via a vacuum valve 216.

[0042] Next, we will describe a method for depositing a film inside a container with a handle using a CVD deposition apparatus. To deposit a film on the inner surface of the container 100 with a handle using the CVD deposition apparatus described above, first, the container 100 with a handle is placed in the vacuum chamber 200. With the space electrode 300 attached to the through-opening 107 of the container with handle 100, the container is housed in the upper housing space of the upper electrode 207 and the lower housing space of the lower electrode 208, and then closed, thereby housing the entire structure in the housing space of the cathode electrode 203. This surrounds the outer perimeter of the first wall portion 1031 and the second wall portion 106 of the container with handle 100 with the cathode electrode 203. Furthermore, by fixing the lid portion 205 to the cathode electrode 203 via an insulating member 206, the gas outlet 201a at the tip of the tubular anode electrode 204 is positioned in the first inner space 105 of the container with handle 100.

[0043] After setting the container with handle 100 in the vacuum chamber 200 in this manner, the vacuum chamber 200 is depressurized by exhausting gas from the gas introduction section 201, which consists of the anode electrode 204, using the vacuum pump 213. Then, the three-way valve 211 is switched, and while exhausting with the vacuum pump 213, raw material gas is introduced from the raw material gas supply section 210 into the first inner space 105 and the second inner space 108 of the container with handle 100 under predetermined vacuum conditions. At the same time, high-frequency power is supplied from the RF power supply to the cathode electrode 203. The output of the high-frequency power at this time is 100kHz to 27MHz.

[0044] This allows a film to be formed on the inner surface of the container 100 with a handle using plasma CVD. As shown in Figure 6, the first magnet 400 is positioned outside the second wall portion 106 corresponding to the second inner space 108 of the handle portion 102, and the second magnet 401 is positioned outside the second wall 106a. As a result, a stronger magnetic field is generated in the second inner space 108 than in the first inner space 105, and electrons are attracted to the second inner space 108. Consequently, sufficient plasma is generated in the second inner space 108, and a uniform DLC film is formed on the second wall portions 106 and 106a using the raw material gas. Note that the orientation of the magnetic poles of magnets 400 and 401 shown in Figure 6 is just one example; the magnetic poles may be in the same direction or opposite directions, and when installing multiple magnets, the orientation of the magnetic poles of all of them may be aligned in the same direction or alternated.

[0045] With the CVD film deposition apparatus described above, by placing a magnet on a part of the outer wall corresponding to a part of the inner space of the container body 101, a stronger magnetic field can be formed in a part of the inner space than in other parts, allowing for film deposition. As a result, for example, electrons in the plasma are attracted by the magnetic force into the second inner space 108 of the handle portion 102, the raw material gas in the second inner space 108 of the handle portion 102 is ionized, and the ionized raw material is attracted to the inner surface of the second wall portions 106 and 106a of the handle portion 102, thereby promoting film deposition on the inner surface of the handle portion 102. As a result, even if there is an inner surface of the container body 101 that is difficult to deposit film on, it is possible to promote film deposition in that area.

[0046] The above embodiments can be modified as appropriate within the scope of the present invention. For example, although the above embodiments described an example in which a thin film was formed on the inner surface of the wall portion of a container, it is not necessarily required to be a container, and the scope of the present invention can be applied even if the arrangement of the wall portions forming the container is narrower in some parts than in other parts. Furthermore, although the above embodiment described an example in which multiple magnets are arranged, it is also possible to arrange a single magnet along the handle portion 102. Furthermore, in the above embodiment, multiple magnets were arranged on the inside and outside of the handle portion 102, but they may also be arranged on the left and right sides of the handle portion 102. [Examples]

[0047] Next, we will describe some examples. Examples 1-4 and the comparative examples are examples in which a DLC film is deposited on the object to be coated. [Example 1] The object to be coated is a container 100 with a handle, molded from PET resin as shown in Figure 1. First, as a preliminary step, 10mm x 10mm Si wafers were fixed with tape to multiple locations inside the container 100 with a handle to check the film deposition results. Here, the container 100 with a handle was cut in the middle vertically, and the wafers were fixed to a total of five inner surfaces: the bottom, the side circumference of the first wall 71 of the container body 7a (body), the shoulder, and the outer and inner sides (container body side) of the second wall 106 of the handle 102. After that, the top and bottom of the cut container 100 with a handle were joined with tape to be used as the container for film deposition.

[0048] In the prepared container 100 with a handle, aluminum foil was wrapped around the entire circumference, excluding the opening 104, to serve as a cathode electrode. At this time, the aluminum foil was wrapped so as to be continuous without any gaps around the entire circumference of the first wall 103 of the container body 101 and the entire circumference of the second wall 106 of the handle 102. Then, the first magnet 400 and the second magnet 401 were fixed to the outside of the aluminum foil along the second wall portion 106 of the handle portion 102. In Embodiment 1, two magnets 400 and 401 were fixed to the inside and outside of the handle portion 102, respectively. At this time, the magnetic poles of each magnet 400 and 401 were positioned so that they faced opposite directions on the outside and inside of the handle portion 102.

[0049] Furthermore, the handle portion 102 was covered with aluminum foil from the outside of the fixed magnets 400, 401, and the through-opening 107 and the recess around it that exist between the handle portion 102 and the container body portion 101 were filled with aluminum foil. This ensures that the entire side circumference of each magnet 400, 401 is surrounded by the upper electrode.

[0050] Next, using a CVD film deposition apparatus as shown in Figure 7, the container 100 with a handle, to which the upper electrode was attached as described above, was set up, and the film deposition process was performed on the inner surface of the container 100 with a handle. A container 100 with a handle, surrounded by an upper electrode made of aluminum foil and with a first magnet 400 and a second magnet 401 positioned in predetermined locations, was placed on the cathode electrode. The gas introduction section was inserted into the first inner space of the container 100 with a handle and grounded, and the container was set inside the vacuum chamber.

[0051] In this state, the vacuum chamber was depressurized, and under predetermined vacuum conditions, the raw material gas was introduced from the gas inlet and high-frequency power was supplied to the cathode electrode to generate plasma inside the container 100 with a handle and deposit a DLC film.

[0052] After the film deposition was complete, the vacuum chamber was opened to allow the container 100 with a handle to be removed, and the thickness of the thin film deposited on each part was measured. The results are shown in Table 1.

[0053] [Examples 2-4] Except for the positions and number of the first magnets 400 and second magnets 401 placed in the handle portion 100, all other aspects were the same as in Example 1, and a film was formed inside the container with a handle 100. In Example 2, one second magnet 401 was fixed to the inside of the handle portion 102. In Example 3, two first magnets 400 and two second magnets 401 were fixed in parallel to the inside and outside of the handle portion 102. In Example 4, one first magnet 400 was fixed to the outside of the handle portion 102. The results are shown in Table 1.

[0054] [Comparative Example 1] Except for not placing the first magnet 400 and the second magnet 401 in the handle portion 102, the container with a handle was constructed in the same manner as in Example 1, and a film was formed inside the container 7 with a handle. The results are shown in Table 1.

[0055] [Table 1]

[0056] As is clear from the results in Table 1, when magnets were not placed on the handle portion 102 as in Comparative Example 1, it was not possible to form a DLC film on the inner surface of the second wall portions 106 and 106a of the handle portion 102. In contrast, in Examples 1 to 4, where magnets were placed on the handle portion 102, DLC could be deposited on the inner surface of the second wall portions 106 and 106a of the handle portion 102. In particular, as in Examples 1 and 3, by placing magnets on both the inside and outside of the handle portion 102, it was possible to deposit a DLC film with sufficient thickness.

[0057] Furthermore, it is possible to deposit a SiOx film on the target object by adding multiple film deposition conditions to the above-described examples. The additional film deposition conditions include increasing the output of the high-frequency power supply (for example, from 300W to 500W), adding oxygen, adjusting the pressure, and adjusting the flow rate of the raw material gas. Furthermore, in all embodiments, the magnets are arranged in one row on the outside and one row on the inside of the handle. While HMDS-O (HexaMethylDisiloxiane) is used as the raw material gas, other raw materials such as TMS (TriMethoxySilane) or TEOS (TetraEthoxySilane) can also be used.

[0058] [Table 2]

[0059] As is clear from Table 2, when the film deposition process was carried out under the basic film deposition conditions shown in Example 6, it became possible to deposit a SiOx film with sufficient thickness inside the container of the object to be deposited.

[0060] It should be noted that the present invention is not limited to the embodiments described above and can be implemented with various modifications. For example, the object to be film-deposited is not limited to a container with a handle, but may be a container of various shapes, and the shape of the electrodes and the arrangement of the magnets can be changed to suit the shape of the container. [Explanation of Symbols]

[0061] 100 containers with handles 101 Container body 102 Handle section 103 1st wall section 104 Opening 105 First Inner Space 106,106a Second wall section 107 Through-opening 108 Second Inner Space 200 Vacuum Chamber 201 Gas Inlet 203 Cathode electrode 204 Anode electrode 205 Lid 206 Insulating material 207 Upper electrode 208 Lower electrode 209 O-ring 210 Raw Gas Supply Department 210a Source of raw material gas 210b Mass Flow Controller 211 Three-way valve 212, 214, 216 Vacuum valves 213 Vacuum pump (for venting) 214 Vacuum pump (for flow) 300 Spatial electrode 301,302 split field 301a,302a Inside surface 301b,301b outer surface

Claims

1. A CVD deposition apparatus comprising a vacuum chamber containing an object to be deposited, a gas introduction unit for introducing a raw material gas into an inner space formed by the wall of the object to be deposited, a cathode electrode positioned outside the wall and supplied with high-frequency power, and an anode electrode positioned in the inner space, wherein a film is deposited on the inner surface of the wall that is in contact with the inner space by plasma CVD under predetermined vacuum conditions by introducing the raw material gas into the inner space and supplying the high-frequency power, A CVD deposition apparatus that deposits a film on the inner surface while generating a stronger magnetic field in a part of the inner space than in other parts by placing a magnet on a part of the outer side of the wall corresponding to a part of the inner space.

2. The CVD film deposition apparatus according to claim 1, wherein the wall portion is provided to surround the inner space, and the magnet is arranged around the outer perimeter of the wall portion.

3. The CVD film deposition apparatus according to claim 2, wherein the magnets are arranged at multiple positions on the outer perimeter of the wall portion, sandwiching a part of the inner space.

4. The CVD film deposition apparatus according to claim 2, wherein the wall portion comprises a first wall portion surrounding a first inner space in which the gas introduction portion is located, and a second wall portion having a smaller cross-sectional shape than the first inner space and surrounding a second inner space continuous with the first inner space, and the magnet is arranged around the outer periphery of the second wall portion.

5. The CVD film deposition apparatus according to claim 4, wherein the object to be film-deposited is a container, having a container body formed by the first wall portion and a handle portion formed by the second wall portion and connected to the container body portion at both ends, and the second inner space of the handle portion is continuous with the first inner space at both ends.

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