Method for manufacturing an electrostatic chuck

Abstract

To suppress changes in the performance of components made of hard, brittle materials over time. [Solution] The manufacturing method M includes a preparation step S1 for preparing a substrate made of a hard, brittle material, and a textured processing step S2 for applying a textured surface to the substrate. The textured surface forms a protrusion projecting in a first direction and a bottom surface surrounding the protrusion on the substrate. The bottom surface extends in a plane defined by a second direction intersecting the first direction and a third direction intersecting both the first and second directions. The bottom surface and the side surface of the protrusion connected to the bottom surface are defined in a cross-section by the first and second directions, where z is the first direction and x is the second direction, and z = Ax 2 The relationship -Bx is satisfied, where A is between 0.005 and 0.200, and B is between 0.050 and 0.955.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a component made of a hard and brittle material and a component made of a hard and brittle material.

Background Art

[0002] A processing method of applying an uneven shape to the surface of a base material made of a hard and brittle material by blasting is known. For example, in Patent Document 1, an electrostatic chuck used in semiconductor manufacturing is manufactured by the above-described processing method.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In a component made of a hard and brittle material such as an electrostatic chuck, the convex portion may be worn out by repeated use. Since the convex portion formed by the processing method described in Patent Document 1 has a tapered shape that tapers toward the tip, the area of the upper surface of the convex portion changes over time. Therefore, the performance of the component made of a hard and brittle material may change over time. For example, in an electrostatic chuck, when the area of contact between the convex portion and the wafer changes, the heat transfer performance and the like may change, so it may be necessary to change the manufacturing conditions such as during film formation.

[0005] The present disclosure describes a method for manufacturing a component made of a hard and brittle material and a component made of a hard and brittle material capable of suppressing temporal changes in the performance of the component made of a hard and brittle material.

Means for Solving the Problems

[0006] A method for manufacturing a hard brittle material component according to one aspect of this disclosure includes the steps of preparing a base material made of a hard brittle material and applying a textured surface to the base material. The textured surface creates a protrusion projecting in a first direction and a base surface surrounding the protrusion. The base surface extends in a plane defined by a second direction intersecting the first direction and a third direction intersecting both the first and second directions. The base surface and the side surface of the protrusion connected to the base surface are defined in a cross-section by the first and second directions, where z = Ax, if the first direction is z and the second direction is x. 2 The relationship -Bx is satisfied. A is between 0.005 and 0.200, and B is between 0.050 and 0.955.

[0007] The base surface and the side surface of the protrusion formed by the above manufacturing method satisfy the relationship described above. Therefore, a shape is obtained in which the protrusion rises steeply from the base surface in the first direction. In other words, even if the position of the protrusion in the first direction changes, the cross-sectional shape of the protrusion perpendicular to the first direction hardly changes. For this reason, even if the protrusion is worn down, the area of ​​the upper surface of the protrusion hardly changes. As a result, it is possible to suppress changes in the performance of parts made of hard brittle materials over time.

[0008] In some embodiments, the process of creating a textured surface may include the steps of forming a mask pattern on a substrate and blasting the substrate on which the mask pattern has been formed. In this case, the blast material collides with the portion of the substrate not covered by the mask pattern, and that portion is processed by the principle of brittle fracture. This makes it possible to create a textured surface on the substrate.

[0009] In some embodiments, the material used to construct the mask pattern may be acrylic urethane resin. In this case, the mask pattern is less susceptible to wear during blasting, and the shape of the mask pattern can be maintained during blasting. Therefore, the likelihood of the same portion of the substrate remaining covered by the mask pattern during blasting increases, thus improving processing accuracy. As a result, it becomes possible to more reliably obtain a shape in which the convex portion rises steeply from the bottom surface in a first direction.

[0010] In some embodiments, the jetting speed of the material used in blasting may be 100 meters per second or more. A higher jetting speed improves the straight-line movement of the material. When the jetting speed is 100 meters per second or more, the material is more likely to penetrate the corners formed by the base and the protrusions. Therefore, it becomes possible to more reliably obtain a shape in which the protrusions rise steeply from the base in the first direction.

[0011] In some embodiments, the particle size of the abrasive material used in blasting may be 38 μm or less. In this case, the abrasive material is more likely to penetrate the corners formed by the base and the convex portion. Therefore, it becomes possible to more reliably obtain a shape in which the convex portion rises steeply from the base in the first direction.

[0012] A component made of a hard, brittle material relating to another aspect of the present disclosure comprises a base on a plate and a protrusion projecting in a first direction from one face of the base. The one face extends in a plane defined by a second direction intersecting the first direction and a third direction intersecting both the first and second directions. The one face and the side of the protrusion connected to the one face are such that, in the cross-section defined by the first and second directions, z = Ax, where z is the first direction and x is the second direction. 2 The relationship -Bx is satisfied. A is between 0.005 and 0.200, and B is between 0.050 and 0.955.

[0013] In the hard, brittle material component described above, one surface and the side surface of the protrusion satisfy the aforementioned relationship. Therefore, the hard, brittle material component has a shape in which the protrusion rises steeply from one surface in the first direction. In other words, even if the position of the protrusion in the first direction changes, the cross-sectional shape of the protrusion perpendicular to the first direction hardly changes. For this reason, even if the protrusion is worn down, the area of ​​the upper surface of the protrusion hardly changes. As a result, it is possible to suppress changes in the performance of the hard, brittle material component over time. [Effects of the Invention]

[0014] According to each aspect and each embodiment of the present disclosure, it is possible to suppress changes over time in the performance of parts made of hard and brittle materials.

Brief Description of the Drawings

[0015] [Figure 1] FIG. 1 is a process diagram of a method for manufacturing a part made of a hard and brittle material according to an embodiment. [Figure 2] FIG. 2 is a diagram for explaining the lamination process. [Figure 3] FIG. 3 is a diagram for explaining the exposure process. [Figure 4] FIG. 4 is a diagram for explaining the development process. [Figure 5] FIG. 5 is a diagram schematically showing a blasting device. [Figure 6] FIG. 6 is a diagram for explaining the blasting process. [Figure 7] FIG. 7 is a diagram showing an example of the movement trajectory of the nozzle. [Figure 8] FIG. 8 is a perspective view showing an example of a part made of a hard and brittle material produced by the method for manufacturing a part made of a hard and brittle material shown in FIG. 1. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX of FIG. 8. [Figure 10] (a) of FIG. 10 is a diagram showing the processed shape of Example 1. (b) of FIG. 10 is a diagram showing the processed shape of Comparative Example 1. (c) of FIG. 10 is a diagram showing the processed shape of Comparative Example 2.

Modes for Carrying Out the Invention

[0016] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the description of the drawings, the same reference numerals are given to the same elements, and duplicate descriptions are omitted. In each figure, an XYZ coordinate system may be shown. The Y-axis direction (third direction) is a direction that intersects (here, is orthogonal) with the X-axis direction (second direction) and the Z-axis direction (first direction). The Z-axis direction is a direction that intersects (here, is orthogonal) with the X-axis direction and the Y-axis direction.

[0017] Referring to FIGS. 1 to 7, a method for manufacturing a component made of a hard and brittle material according to an embodiment will be described. FIG. 1 is a process diagram of a method for manufacturing a component made of a hard and brittle material according to an embodiment. FIG. 2 is a diagram for explaining a lamination process. FIG. 3 is a diagram for explaining an exposure process. FIG. 4 is a diagram for explaining a development process. FIG. 5 is a diagram schematically showing a blasting device. FIG. 6 is a diagram for explaining a blasting process. FIG. 7 is a diagram showing an example of a movement locus of a nozzle. The manufacturing method M of the component made of a hard and brittle material shown in FIG. 1 is a method for forming an uneven shape on a substrate. The manufacturing method M includes a preparation step S1 and an uneven processing step S2.

[0018] <Preparation Step S1> The preparation step S1 is a step of preparing a substrate 10. As the substrate 10, for example, a substrate having a plate-like shape is prepared. The substrate 10 is made of a hard and brittle material. Examples of the constituent material of the substrate 10 include ceramic materials such as aluminum nitride, alumina, and silicon carbide, glass, silicon, sapphire, and gallium oxide. The substrate 10 has a surface 10a and a surface 10b. The surface 10b is the surface on the opposite side of the surface 10a.

[0019] <Uneven Processing Step S2> Following the preparation step S1, an uneven processing step S2 is performed. The uneven processing step S2 is a step of performing uneven processing on the substrate 10. In the present embodiment, the uneven processing step S2 includes a pattern formation step S11, a blasting step S12, a pattern removal step S13, and a cleaning step S14.

[0020] <Pattern Formation Step S11> The pattern formation step S11 is a step of forming a resist pattern P on the substrate 10. Specifically, the resist pattern P is formed on the surface 10a of the substrate 10. The resist pattern P is a mask pattern that defines a portion to be protected in the blasting process described later. In the present embodiment, the pattern formation step S11 includes a lamination step S21, an exposure step S22, and a development step S23.

[0021] <Laminating process S21> Laminating process S21 is a process of forming a resist film 12 on the surface 10a of the substrate 10. The resist film 12 is a photosensitive photoresist. For example, the resist film 12 is formed using a liquid resist or a dry film resist. The constituent material (material) of the resist film 12 is a material that is resistant to wear during the blasting process described later. Examples of constituent materials for the resist film 12 include urethane resins such as acrylic urethane, polyurethane, and urethane acrylate.

[0022] When a resist film 12 is formed using a liquid resist, the liquid resist is uniformly applied to the surface 10a using a coater. Examples of coaters include spin coaters, roll coaters, die coaters, and bar coaters. Alternatively, the liquid resist may be uniformly applied to the surface 10a by screen printing. Subsequently, the resist film 12 is formed on the surface 10a by drying the applied liquid resist.

[0023] As shown in Figure 2, when a resist film 12 is formed using a dry film resist 25, a laminating apparatus 20 is used. The laminating apparatus 20 includes a supply roller 21, a peeling roller 22, a recovery roller 23, and a crimping roller 24. The supply roller 21 holds the dry film resist 25 and is configured to supply the dry film resist 25. As the dry film resist 25, for example, Mitsubishi Paper Mills dry film resist (model: MS7100) is used. A protective film is provided on one side of the dry film resist 25, and a carrier film is provided on the other side of the dry film resist 25. An example of a constituent material for the protective film is polyethylene. An example of a constituent material for the carrier film is PET (polyethylene terephthalate).

[0024] The peeling roller 22 is a roller for peeling the protective film from the dry film resist 25. The recovery roller 23 is a roller for recovering the protective film peeled off by the peeling roller 22. The pressing roller 24 is a roller for pressing the dry film resist 25 onto the surface 10a of the substrate 10. In this embodiment, a pair of pressing rollers 24 are used.

[0025] The protective film of the dry film resist 25 supplied from the supply roller 21 is peeled off by the peeling roller 22 and collected by the recovery roller 23. Then, the surface of the dry film resist 25 from which the protective film has been peeled off is placed over the surface 10a of the substrate 10 and passed between the pair of pressure rollers 24, thereby adhering the dry film resist 25 to the surface 10a. At this time, the dry film resist 25 is adhered by moving the substrate 10 or the pressure rollers 24 along the surface 10a in one direction at a constant speed. The protective film may be peeled off manually by an operator.

[0026] The crimping roller 24 may be a heating roller that includes a heating element. In this case, the crimping roller 24 presses the dry film resist 25 onto the surface 10a while heating it. The substrate 10 itself may be preheated in a constant temperature bath or the like. The heating temperature is set appropriately within the range of, for example, 30°C to 80°C. If the heating temperature is too high, the adhesion between the substrate 10 and the dry film resist 25 becomes too high. As a result, the dry film resist 25 may not be fully developed during development, potentially leaving a residual film. If the heating temperature is too low, the adhesion between the substrate 10 and the dry film resist 25 becomes too low. As a result, the dry film resist 25 in the area to be protected after development may be lost, making it impossible to form the desired pattern. Therefore, the heating temperature can be appropriately selected considering the material of the substrate 10, the exposure conditions, and the development conditions.

[0027] As described above, the dry film resist 25 is applied to the surface 10a so that no air is trapped between the substrate 10 and the dry film resist 25. Then, any excess dry film resist 25 is removed along the outer shape of the surface 10a. This forms a resist film 12 on the surface 10a of the substrate 10. Alternatively, instead of the pair of pressure rollers 24, a table on which the substrate 10 is placed and the pressure rollers 24 may be used. The dry film resist 25 may also be applied to the substrate 10 manually by an operator without using the laminating device 20.

[0028] The resist material contained in the dry film resist or resist solution may be a positive-type resist material or a negative-type resist material. A positive-type resist material is a resist material in which the exposed region 12a of the resist film 12 dissolves, leaving the unexposed region 12b. A negative-type resist material is a resist material in which the unexposed region 12b of the resist film 12 dissolves, leaving the exposed region 12a.

[0029] <Exposure process S22> Following the lamination process S21, the exposure process S22 is performed. The exposure process S22 is a process of exposing the resist film 12. As shown in Figure 3, in the exposure process S22, a pattern mask 14 is placed on the resist film 12, and energy rays L are irradiated onto the resist film 12 from the light source of the exposure apparatus through the pattern mask 14. Reference positions such as alignment marks provided within the pattern mask 14 are recognized by image processing or the like, and the pattern mask 14 is placed on the resist film 12 at the desired position using the reference positions. If positional accuracy is not required, the pattern mask 14 may be placed by visual inspection.

[0030] As the pattern mask 14, a negative-type mask is used that has a region 14a that transmits energy rays L and a region 14b that does not transmit energy rays L. The pattern mask 14 has a configuration in which a predetermined pattern is formed on a transparent plate material, for example. Examples of transparent plate materials include glass and film. The pattern has, for example, black. Of the transparent plate material, the region where the pattern is not formed corresponds to region 14a, and the region where the pattern is formed corresponds to region 14b.

[0031] For example, visible light or ultraviolet light can be used as the energy ray L. For example, LED (Light Emitting Diode) lamps, mercury lamps, metal halide lamps, excimer lamps, and xenon lamps can be used as light sources for irradiating with energy ray L. If the dry film resist is an ultraviolet curable resin, for example, an ultraviolet light source manufactured by Therma Precision (model: BHG-750) can be used as the light source. A rod-shaped lens may be used to improve the straightness of the energy ray L. In this case, the energy ray L emitted from the light source is straightened by passing through the rod-shaped lens. Furthermore, due to dimensional constraints of the exposure apparatus, a mirror may be provided. In this case, the direction of the energy ray L is changed by the mirror.

[0032] When the resist film 12 is irradiated with energy rays L, the pattern of the pattern mask 14 is transferred to the resist film 12. Specifically, the portion of the resist film 12 covered by region 14a is irradiated with energy rays L, so that portion hardens and becomes the exposed region 12a. On the other hand, the portion of the resist film 12 covered by region 14b is not irradiated with energy rays L, so that portion becomes the unexposed region 12b. The irradiation of the energy rays L is carried out, for example, in a darkroom. If the light intensity is too low, the resist film 12 may not harden sufficiently in the thickness direction of the resist film 12. In this case, the change from the design dimensions may become large during development, and a pattern may be formed in which the width narrows as it approaches the substrate 10 from the surface of the resist film 12. The light intensity is defined as the product of the illuminance of the energy rays L and the irradiation time. The light intensity is set as an exposure condition so that a pattern of uniform width is obtained in the thickness direction of the resist film 12.

[0033] The exposure process S12 may be performed manually or automated by an exposure apparatus.

[0034] <Developing process S23> Following the exposure process S22, the development process S23 is performed. The development process S23 is a process of developing the pattern transferred to the resist film 12. As shown in Figure 4, the developing apparatus 30 sprays the developer onto the resist film 12. An alkaline aqueous solution is used as the developer. The developer can be obtained, for example, by diluting sodium carbonate, an alkaline powder, with water to a desired concentration (for example, 0.3 to 1% by weight). The optimal concentration is appropriately selected depending on the resist film 12. The developer may be heated to about 40°C to improve its developability. The developer is pressurized by a pressure pump or the like and delivered to a nozzle. The developer and compressed air are mixed inside the nozzle, and the developer is atomized and sprayed from the nozzle onto the substrate 10. The temperature of the compressed air is, for example, about 100°C. The developer may also be sprayed onto the substrate 10 by showering.

[0035] The nozzle and the substrate 10 are configured to be relatively movable. The substrate 10 may be fixed and the nozzle may be configured to be movable. The nozzle may be fixed and the substrate 10 may be configured to be movable. The nozzle and the substrate 10 may be configured to be independently movable. By moving the nozzle and the substrate 10 relative to each other at a constant speed, the developer is uniformly sprayed onto the resist film 12. This makes it possible to achieve uniform development across the entire resist film 12. When the developer is sprayed onto the resist film 12, the unexposed areas 12b are selectively removed, leaving the exposed areas 12a. Subsequently, the developed resist film 12 (exposed areas 12a) is washed, for example, with water to stop the reaction of the developer. Then, the resist film 12 is dried by air blowing or the like. As a result, a resist pattern P having a fine and uniform pattern is formed on the substrate 10.

[0036] If the amount of developer sprayed is insufficient, the unexposed region 12b may remain as a residual film. On the other hand, if the amount of developer sprayed is excessive, the resist pattern P may peel off. Development conditions are set that suppress residual film formation while avoiding peeling of the resist pattern P. For example, the relative movement speed between the nozzle and the substrate 10 is a factor that determines the amount of developer sprayed. Therefore, the movement speed may be set as a development condition so that the desired resist pattern P is obtained.

[0037] The developing process S13 may be performed manually or automated by the developing device 30.

[0038] <Blasting process S12> Following the pattern formation process S11, a blasting process S12 is performed. The blasting process S12 is performed, for example, by a blasting apparatus 50 shown in Figure 5. The blasting apparatus 50 is a suction-type blasting apparatus. The blasting apparatus 50 includes a container 51, a table 52, a nozzle 53, a classification mechanism 54, a dust collector 55, a compressor 56, and a supply device 57. The container 51 defines a processing chamber R inside it. The lower part of the container 51 defines a tapered recovery space V that narrows in width towards the bottom. An opening is formed at the bottom of the container 51 for supplying the aerosol MD collected in the recovery space V to the classification mechanism 54. One end of a recovery pipe 61 is connected to the opening. The other end of the recovery pipe 61 is connected to the classification mechanism 54.

[0039] Table 52 is a platform for placing the base material 10. Table 52 is located inside the processing chamber R. Table 52 has a mounting surface 52a. The base material 10 is placed and fixed on the mounting surface 52a. The mounting surface 52a may also be an adhesive surface that adsorbs and fixes the base material 10.

[0040] The nozzle 53 sprays the propellant MD toward the surface 10a of the substrate 10. The nozzle 53 is located inside the processing chamber R and positioned above the table 52. The tip of the nozzle 53 is provided with a nozzle opening 53a. The nozzle 53 is located inside the processing chamber R such that the nozzle opening 53a faces the mounting surface 52a of the table 52. The nozzle 53 is a suction-type nozzle. One end of the hose 62 and the other end of the hose 63 are connected to the nozzle 53. The nozzle 53 sprays the propellant MD supplied from the supply device 57 via the hose 62 as a solid-gas two-phase flow together with compressed air supplied from the compressor 56 via the hose 63.

[0041] At least one of the table 52 and the nozzle 53 is configured to be able to move relative to the table 52 by a moving mechanism (not shown). For example, an XY stage can be used as the moving mechanism.

[0042] The classification mechanism 54 is a mechanism that sucks up the powder material MD, which has been sprayed onto the substrate 10 from the nozzle 53, and separates it into reusable powder material MD and other powder material dust (a general term for cutting dust from the substrate 10 generated by blasting and powder material MD that has become too large to be reused). The classification mechanism 54 is, for example, a cyclone-type classifier. One end of the conduit 64 is connected to the classification mechanism 54. The other end of the conduit 64 is connected to the dust collector 55.

[0043] The dust collector 55 is a device for collecting fragments of the propellant MD and cutting dust from the base material 10. The dust collector 55 draws air through the conduit 64 and generates an airflow that flows from the opening of the container 51 through the recovery pipe 61, the classification mechanism 54, and the conduit 64 towards the dust collector 55. This airflow transports the granular material, including the used propellant MD collected in the recovery space V of the container 51, to the classification mechanism 54. The operation of the dust collector 55 generates a swirling airflow inside the classification mechanism 54, causing heavier granular material (reusable propellant MD) to fall downwards. Meanwhile, lighter granular material (dust) is drawn into the dust collector 55 via the conduit 64. The dust drawn in by the dust collector 55 is captured using a filter.

[0044] The supply device 57 is a device for supplying the propellant MD to the nozzle 53. The supply device 57 is located below the classification mechanism 54. The supply device 57 comprises a hopper 71, a valve body 72, and a conveying mechanism 73. The hopper 71 is a container for storing the propellant MD. The hopper 71 has a shape in which the area of ​​the cross-section decreases as it goes downwards. The cross-sectional shape of the hopper 71 may be circular or polygonal.

[0045] The valve body 72 is provided at the connection between the classification mechanism 54 and the hopper 71, and has the function of connecting or closing the space of the classification mechanism 54 and the space of the hopper 71. The valve body 72 is, for example, a double damper. When a predetermined amount of reusable propellant MD has accumulated at the bottom of the classification mechanism 54, the valve body 72 is opened, causing the predetermined amount of propellant MD to fall into the hopper 71. Subsequently, the valve body 72 is closed, closing the space of the classification mechanism 54 and the space of the hopper 71. The timing of opening and closing the valve body 72 may be controlled by the amount of reusable propellant MD accumulated, or by time. Note that the valve body 72 may be omitted.

[0046] The conveying mechanism 73 takes a fixed amount of propellant MD from the hopper 71 and supplies the taken propellant MD to the nozzle 53 via the hose 62. A fixed amount of propellant MD from the propellant MD stored in the hopper 71 is supplied to the nozzle 53 by the rotation of the conveying screw in the conveying mechanism 73.

[0047] Alternatively, a direct-pressure type blasting device may be used instead of the blasting device 50.

[0048] In the blasting process S12, various processing conditions are combined and set according to the material and shape of the surface of the substrate 10. For example, the following processing conditions are used. As the abrasive material MD, for example, an abrasive material having a hardness equal to or greater than the hardness of the substrate 10 and a particle size (average particle diameter) of 5 to 70 μm is used. The abrasive speed is set to, for example, 80 to 300 m / sec. The abrasive distance is set to, for example, 5 to 20 times the diameter of the nozzle 53. The abrasive angle is set to, for example, 75 to 105 degrees.

[0049] In the blasting process S12, first, the door of the container 51 is opened, and the substrate 10 on which the resist pattern P has been formed is placed on the mounting surface 52a of the table 52 by a transport robot. Subsequently, after the dust collector 55 is started, compressed air is supplied from the compressor 56 to the nozzle 53 via the hose 63. After that, the supply device 57 is started, and the abrasive material MD is supplied to the nozzle 53 via the hose 62.

[0050] As shown in Figures 6 and 7, the nozzle 53 moves relative to the table 52 (substrate 10) at a constant speed so that the nozzle 53 sprays the propellant MD along the movement trajectory MP. The movement trajectory MP has a zigzag shape and includes multiple scan lines SL and multiple feed lines PL. Specifically, the nozzle 53 moves relative to the substrate 10 in the positive X-axis direction along the first scan line SL (the scan line SL at the left end of Figure 7). Then, the nozzle 53 moves relative to the substrate 10 in the positive Y-axis direction along the first feed line PL. Next, the nozzle 53 moves relative to the substrate 10 in the negative X-axis direction along the second scan line SL. Then, the nozzle 53 moves relative to the substrate 10 in the positive Y-axis direction along the second feed line PL at a constant speed. By repeating this series of operations, the nozzle 53 sprays the propellant MD onto the surface 10a of the substrate 10 along the movement trajectory MP. This ensures that the propellant MD is uniformly sprayed over the entire surface 10a of the substrate 10. Furthermore, the nozzle 53 continues to spray the propellant MD while moving along the movement trajectory MP.

[0051] The propellant MD strikes the portion of surface 10a that is not covered by the resist pattern P, and these portions are processed by the brittle fracture principle, forming a recess 10c. On the other hand, the propellant MD does not reach the portion of surface 10a that is covered by the resist pattern P, so these portions are not processed and remain as a convex portion 10d.

[0052] <Pattern removal process S13> Following the blasting process S12, the pattern removal process S13 is performed. The pattern removal process S13 is a process of removing the resist pattern P from the substrate 10. For example, the resist pattern P is removed from the surface 10a of the substrate 10 by spraying a stripping solution from a spray nozzle toward the surface 10a of the substrate 10.

[0053] <Washing process S14> Following the pattern removal step S13, a cleaning step S14 is performed. The cleaning step S14 is a step to remove any remaining propellant from the substrate 10. By immersing the substrate 10 in the cleaning solution, the propellant is washed away from the substrate 10. Note that the pattern removal step S13 and the cleaning step S14 may be performed in a single step.

[0054] As a result, the base material 10 is given a textured surface, and a part made of a hard, brittle material is manufactured.

[0055] Next, a component made of a hard, brittle material manufactured by manufacturing method M will be described with reference to Figures 8 and 9. The component 100 made of a hard, brittle material shown in Figures 8 and 9 is, for example, an electrostatic chuck. The component 100 comprises a base 101 and a plurality of protrusions 102. The base 101 is a flat plate-shaped portion. The base 101 has a surface 101a (bottom surface, one surface). Surface 101a is a surface substantially parallel to a plane defined by the X-axis and Y-axis directions.

[0056] Each protrusion 102 is a columnar portion that projects from the surface 101a in the Z-axis direction. In other words, the surface 101a surrounds the protrusions 102. In this embodiment, each protrusion 102 has a cylindrical shape. The protrusion 102 has a top surface 102a and a side surface 102b. The top surface 102a is a surface substantially parallel to the surface 101a. If the component 100 is an electrostatic chuck, a semiconductor wafer is placed on the top surface 102a. The side surface 102b is the circumferential surface of the protrusion 102. The side surface 102b is provided between the surface 101a and the top surface 102a and is connected to the surface 101a and the top surface 102a, respectively.

[0057] In the cross-section defined by the X-axis and Z-axis directions, the plane 101a and the side surface 102b are defined by z = Ax 2The relationship -Bx is satisfied. z represents the position in the Z-axis direction, and x represents the position in the X-axis direction. A is between 0.005 and 0.200, and B is between 0.050 and 0.955. In other words, the above relationship is obtained by approximating the position z in the Z-axis direction of the shape formed by surface 101a and top surface 102a in the above cross-section with a quadratic function of the position x in the X-axis direction.

[0058] In the part 100 formed by manufacturing method M, the surface 101a and the side surface 102b of the protrusion 102 are at z=Ax 2 The relationship -Bx is satisfied. Here, A is between 0.005 and 0.200, and B is between 0.050 and 0.955. Therefore, a shape is obtained in which the protrusion 102 rises steeply from the surface 101a in the Z-axis direction. In other words, even if the position of the protrusion 102 in the Z-axis direction changes, the cross-sectional shape of the protrusion 102 perpendicular to the Z-axis direction hardly changes. For this reason, even if the protrusion 102 is worn down, the area of ​​the top surface 102a of the protrusion 102 hardly changes. As a result, it is possible to suppress changes in the performance of the part 100 over time. For example, if the part 100 is an electrostatic chuck, even if the protrusion 102 is worn down, it is not necessary to change the settings of the film deposition conditions.

[0059] In the manufacturing method M described above, the spray material MD collides with the portion of the substrate 10 that is not covered by the resist pattern P, and that portion is processed by the brittle fracture principle. This makes it possible to create a textured surface on the substrate 10.

[0060] For example, acrylic urethane resin can be used as the constituent material of the resist pattern P. Since acrylic urethane resin has high elasticity, it can absorb the impact when the aerosol material MD collides with it. Therefore, the resist pattern P is less susceptible to wear during blasting, and the shape of the resist pattern P can be maintained during blasting. Consequently, the likelihood of the same part of the substrate 10 remaining covered by the resist pattern P during blasting increases, thus improving processing accuracy. As a result, it becomes possible to more reliably obtain a shape in which the protrusion 102 rises steeply from the surface 101a in the Z-axis direction.

[0061] If the injection speed of the propellant MD is low, the straight-line propagation of the propellant MD decreases, and the propellant MD may not reach the corner formed by the surface 101a and the protrusion 102 sufficiently. In this case, the protrusion 102 takes on a tapered shape, widening as it approaches the surface 101a. On the other hand, if the injection speed of the propellant MD is high, the straight-line propagation of the propellant MD improves. For example, if the injection speed is 100 meters per second or more, the propellant MD can easily penetrate the corner formed by the surface 101a and the protrusion 102. Therefore, it becomes possible to more reliably obtain a shape in which the protrusion 102 rises steeply from the surface 101a in the Z-axis direction.

[0062] If the particle size (average particle size) of the propellant MD is large, the propellant MD may not be able to reach the corner formed by the surface 101a and the protrusion 102 sufficiently. In this case, the protrusion 102 will have a tapered shape, widening as it approaches the surface 101a. On the other hand, if the particle size of the propellant MD is, for example, 38 μm or less, the propellant MD will be able to penetrate the corner formed by the surface 101a and the protrusion 102 more easily. Therefore, it becomes possible to more reliably obtain a shape in which the protrusion 102 rises steeply from the surface 101a in the Z-axis direction.

[0063] The method for manufacturing a hard, brittle material component and the hard, brittle material component described herein are not limited to the embodiments described above.

[0064] For example, in the lamination step S21, the resist pattern P may be attached to the surface 10a of the substrate 10. In this case, the pattern formation step S11 does not need to include the exposure step S22 and the development step S23.

[0065] Next, we will explain the evaluation of the processed shape. To evaluate the processed shape, the substrate was subjected to blast processing under several processing conditions.

[0066] [Evaluation of processed shapes based on differences in resist pattern material] To evaluate the effect of the resist pattern P material on the processed shape of the substrate 10, blast processing was performed using resist patterns P made of several materials.

[0067] (Material of the resist pattern) [Example 1] Acrylic urethane resin was used as the material for the resist pattern. [Comparative Example 1] Acrylic resin was used as the material for the resist pattern. [Comparative Example 2] Metal was used as the material for the resist pattern.

[0068] (Common processing conditions) An aluminum nitride substrate was used as the base material. The design value for the diameter of the protrusions was 500 μm. GC#1200 (manufactured by Shinto Kogyo) was used as the abrasive material. The abrasive speed was set to 120 m / sec, and the abrasive angle was set to 90 degrees. The nozzle was repeatedly moved along the movement trajectory MP until the recess formed by the blasting process reached a predetermined depth. In Example 1 and Comparative Examples 1 and 2, the thickness of the resist pattern before blasting was 50 μm in all cases, and the diameter of the resist pattern before blasting was approximately 500 μm.

[0069] Table 1 shows the material of the resist pattern in Example 1 and Comparative Examples 1 and 2, the thickness and diameter of the resist pattern before processing, the thickness of the resist pattern after processing, the diameter of the top surface of the protrusions, and the approximate formula for the processed shape. The processed shape is the shape of the surface 101a and the side surface 102b in the cross-section defined by the X-axis and Z-axis directions. In the approximate formula, z represents the position in the Z-axis direction, and x represents the position in the X-axis direction. The same applies to the following evaluations.

[0070] [Table 1]

[0071] The processed shapes of Example 1 and Comparative Examples 1 and 2 will be described with reference to Figures 10(a) to 10(c) and Table 1. Figure 10(a) shows the processed shape of Example 1. Figure 10(b) shows the processed shape of Comparative Example 1. Figure 10(c) shows the processed shape of Comparative Example 2. As shown in Figure 10(b), in Comparative Example 1, the resist pattern P was worn down by blast processing, and its diameter gradually decreased. Therefore, the processed shape became a tapered shape that increased in diameter from the top surface 102a to the surface 101a, and the diameter of the top surface of the convex portion became smaller than the design value.

[0072] As shown in Figure 10(c), in Comparative Example 2, since the material of the resist pattern P is metal, the resist pattern P is durable against blast processing but also ductile. Therefore, as the impact of the blasting material MD was repeated, the resist pattern P stretched along the surface 10a. As a result, the processed shape became an inverse taper shape, decreasing in diameter from the top surface 102a towards the surface 101a, and the diameter of the top surface of the convex portion became larger than the design value.

[0073] In contrast, as shown in Figure 10(a), in Example 1, the resist pattern P is less susceptible to wear during blasting, so the shape of the resist pattern P was maintained during blasting. Consequently, the processed shape was such that the convex portion 102 rose steeply from the surface 101a in the Z-axis direction, and the diameter of the top surface of the convex portion was approximately as designed.

[0074] [Evaluation of processed shape based on differences in injection speed] To evaluate the effect of the spray velocity on the processed shape of the substrate 10, blast processing was performed at several spray velocity levels. A type of blast processing apparatus was selected to achieve a predetermined spray velocity.

[0075] (Spray speed and blasting equipment) [Example 2] A suction-type blasting device was used, and the blasting speed was set to 100 m / second. [Example 3] A suction-type blasting device was used, and the jet speed was set to 130 m / second. [Example 4] A direct-pressure blasting device was used, and the jet speed was set to 150 m / second. [Example 5] A direct-pressure blasting device was used, and the jet speed was set to 200 m / second. [Comparative Example 3] A suction-type blasting device was used, and the jet speed was set to 70 m / second.

[0076] (Common processing conditions) An aluminum nitride substrate was used as the base material. The design value for the diameter of the protrusions was 500 μm. Acrylic urethane resin was used as the material for the resist pattern. GC#1200 (manufactured by Shinto Kogyo) was used as the blasting material. The blasting angle was set to 90 degrees. The nozzle was repeatedly moved along the movement trajectory MP until the recesses formed by blasting reached a predetermined depth. In Examples 2 to 5 and Comparative Example 3, the thickness of the resist pattern before blasting was 50 μm in all cases, and the diameter of the resist pattern before blasting was approximately 500 μm.

[0077] Table 2 shows the injection speed, number of processing cycles, thickness and diameter of the resist pattern before processing, thickness of the resist pattern after processing, diameter of the top surface of the protrusions, and approximate formula for the processed shape for Examples 2-5 and Comparative Example 3.

[0078] [Table 2]

[0079] In Comparative Example 3, the injection speed of the propellant MD was low, which reduced the straightness of the propellant MD, and it is thought that the propellant MD did not sufficiently reach the corner formed by the surface 101a and the protrusion 102. As a result, the processed shape became a tapered shape that increased in diameter from the top surface 102a towards the surface 101a. On the other hand, in Examples 2 to 5, the injection speed of the propellant MD was high, which improved the straightness of the propellant MD, and it is thought that the propellant MD sufficiently reached the corner formed by the surface 101a and the protrusion 102. As a result, the processed shape became a shape in which the protrusion 102 rises steeply in the Z-axis direction from the surface 101a.

[0080] [Evaluation of processed shapes based on differences in particle size of the propellant] To evaluate the effect of the particle size of the aerosol material on the processed shape of the substrate 10, blast processing was performed using aerosol materials of several particle sizes.

[0081] (Particle size of the propellant) [Example 6] A #400 particle size augmentation material was used. This particle size corresponds to an average particle diameter of 38 μm. [Example 7] A #600 particle size augmentation material was used. This particle size corresponds to an average particle diameter of 25 μm. [Example 8] A #1200 particle size augmentation material was used. This particle size corresponds to an average particle diameter of 13 μm. [Example 9] A #1500 particle size augmentation material was used. This particle size corresponds to an average particle diameter of 10 μm. [Comparative Example 4] A #220 particle size aerosol was used. This particle size corresponds to an average particle diameter of 70 μm.

[0082] (Common processing conditions) An aluminum nitride substrate was used as the base material. The design value for the diameter of the protrusions was 500 μm. Acrylic urethane resin was used as the material for the resist pattern. GC (manufactured by Shinto Kogyo Co., Ltd.) was used as the aerosol. The aerosol speed was set to 120 m / sec and the aerosol angle to 90 degrees. The nozzle was repeatedly moved along the movement trajectory MP until the recesses formed by the blasting process reached a predetermined depth. In Examples 6-9 and Comparative Example 4, the thickness of the resist pattern before blasting was 50 μm in all cases, and the diameter of the resist pattern before blasting was approximately 500 μm.

[0083] Table 3 shows the particle size of the spray material for Examples 6-9 and Comparative Example 4, the number of processing cycles, the thickness and diameter of the resist pattern before processing, the thickness of the resist pattern after processing, the diameter of the top surface of the protrusions, and the approximate formula for the processed shape.

[0084] [Table 3]

[0085] In Comparative Example 4, the average particle size of the propellant MD was large, so it is thought that the propellant MD did not sufficiently reach the corner formed by the surface 101a and the protrusion 102. As a result, the processed shape became a tapered shape that increased in diameter from the top surface 102a towards the surface 101a. On the other hand, in Examples 6 to 9, the average particle size of the propellant MD was small, so it is thought that the propellant MD sufficiently reached the corner formed by the surface 101a and the protrusion 102. As a result, the processed shape became a shape in which the protrusion 102 rose steeply from the surface 101a in the Z-axis direction. [Explanation of Symbols]

[0086] 10...Substrate, 10a...Surface, 100...Part (part made of hard, brittle material), 101...Base, 101a...Surface (bottom surface, one side), 102...Convex part, 102a...Top surface, 102b...Side surface, M...Manufacturing method, MD...Aerosol, P...Resist pattern (mask pattern).

Claims

1. A method for manufacturing parts made of hard, brittle materials, A process of preparing a substrate made of a hard, brittle material, The process of applying a textured finish to the substrate, Includes, As a result of the aforementioned uneven processing, the substrate has protrusions that project in the first direction and a bottom surface that surrounds the protrusions. The bottom surface extends in a plane defined by a second direction intersecting the first direction and a third direction intersecting both the first and second directions. The bottom surface and the side surface of the protrusion connected to the bottom surface are, in a cross-section defined by the first direction and the second direction, where z is the first direction and x is the second direction, z = Ax ２ Satisfying the relationship -Bx, A method for manufacturing a hard, brittle material component, wherein A is 0.005 to 0.200 and B is 0.050 to 0.

955.

2. The method for manufacturing a hard brittle material part according to claim 1, wherein the step of applying the aforementioned uneven surface processing includes the steps of forming a mask pattern on the substrate and blasting the substrate on which the mask pattern has been formed.

3. The method for manufacturing a hard, brittle material part according to claim 2, wherein the constituent material of the mask pattern is acrylic urethane resin.

4. The method for manufacturing a hard brittle material part according to claim 2 or claim 3, wherein the ejection speed of the ejection material used in the blasting process is 100 meters per second or more.

5. The method for manufacturing a hard brittle material part according to any one of claims 2 to 4, wherein the particle size of the aerosol used in the blasting process is 38 μm or less.

6. A base on a flat plate, A convex portion projecting in a first direction from one surface of the base, Equipped with, The aforementioned one surface extends in a plane defined by a second direction intersecting the first direction and a third direction intersecting both the first and second directions. The one surface and the side surface of the protrusion connected to the one surface are, in a cross-section defined by the first direction and the second direction, z = Ax, where z is the first direction and x is the second direction. ２ Satisfying the relationship -Bx, A is a component made of a hard, brittle material, with a coefficient of A ranging from 0.005 to 0.200 and a coefficient of B ranging from 0.050 to 0.955.

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