Reference voltage output circuit

Abstract

The present invention provides a reference voltage output circuit 10 that suppresses changes in the reference voltage due to temperature changes in the Zener diode 30 and also suppresses changes in the reference voltage due to stress changes in the Zener diode 30. [Solution] Transistor 40 generates a voltage VA at the first PN junction between the collector terminal 41 and the emitter terminal 42 when a branch current Ic flows between the collector terminal 41 and the emitter terminal 42. Transistor 60 generates a voltage VB at the second PN junction between the emitter terminal 61 and the collector terminal 62 when a branch current Ic flows between the emitter terminal 61 and the collector terminal 62. The resistive voltage divider circuit 50 adds the first weighted voltage of voltage VZ-VA and the second weighted voltage of voltage VB to output a reference voltage Vref. The temperature dependence of Zener voltage VZ is canceled out by the temperature dependence of voltage VA and voltage VB, and the stress dependence of Zener voltage VZ is canceled out by the stress dependence of voltage VA and voltage VB.

Description

Technical Field

[0001] The present disclosure relates to a reference voltage output circuit.

Background Art

[0002] Conventionally, a reference voltage output circuit has been proposed that is arranged between a current source and ground to output a reference voltage (see, for example, Patent Document 1). The reference voltage output circuit includes a Zener diode and a voltage dividing circuit. The Zener diode and the voltage dividing circuit are arranged in parallel between the current source and ground. The Zener diode has a cathode terminal connected to the current source and an anode terminal connected to ground. The Zener diode generates a Zener voltage between the current source and ground by the Zener effect when a first branch current, which is a part of the main current flowing from the current source, flows. The Zener voltage has a positive temperature dependence such that the Zener voltage increases as the temperature of the Zener diode increases.

[0003] The voltage dividing circuit includes a first resistor element, a second resistor element, a first diode, and a second diode connected in series between the current source and ground. Hereinafter, the first diode and the second diode are collectively referred to as the first and second diodes, and the first resistor element and the second resistor element are collectively referred to as the first and second resistor elements. The first and second diodes are connected in series between the first and second resistor elements and ground. The first diode has its anode terminal connected to the first and second resistor element side and its cathode terminal connected to the second diode. The second diode has its anode terminal connected to the first diode and its cathode terminal connected to ground. The first and second diodes each have a P-type semiconductor and an N-type semiconductor disposed on the ground side with respect to the P-type semiconductor and joined to the P-type semiconductor to form a PN junction. A second branch current, which is the remaining current excluding the first branch current of the main current, flows through the first and second resistor elements and the first and second diodes to ground.

[0004] The first terminal voltage between the anode and cathode terminals of the first diode is a voltage due to the PN junction and has a negative temperature dependence, decreasing as the temperature of the first diode increases. The second terminal voltage between the anode and cathode terminals of the second diode is a voltage due to the PN junction and also has a negative temperature dependence, decreasing as the temperature of the second diode increases. The voltage divider circuit adds the voltage obtained by multiplying the Zener voltage by a first weight, the voltage obtained by multiplying the first terminal voltage by a second weight, and the voltage obtained by multiplying the second terminal voltage by a third weight, and outputs this added voltage as the reference voltage. The first, second, and third weights are set by voltage division using first and second resistor elements, respectively. As a result, the temperature dependence of the Zener voltage is canceled out by the temperature dependence of the first terminal voltage and the temperature dependence of the second terminal voltage. Therefore, it is possible to suppress changes in the reference voltage output from the voltage divider circuit due to temperature changes in the Zener diode. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] U.S. Patent No. 3916508 [Overview of the project] [Problems that the invention aims to solve]

[0006] In the above reference voltage output circuit, the temperature dependence of the Zener voltage is canceled out by the temperature dependence of the voltage between the first terminal and the voltage between the second terminal. Therefore, it is possible to suppress changes in the reference voltage due to temperature changes in the Zener diode. However, when the Zener diode, the first and second diodes constitute an integrated circuit device, the following problem may occur. That is, the integrated circuit device is configured such that the Zener diode, the first and second diodes are covered by a package component. For example, due to thermal expansion of the package component, stress may be applied from the package component to the Zener diode, the first and second diodes.

[0007] The Zener voltage exhibits a positive stress dependence: when tensile stress is applied to the Zener diode from the package components, the Zener voltage increases; and when compressive stress is applied to the Zener diode from the package components, the Zener voltage decreases. Similarly, the voltage across the first terminal exhibits a positive stress dependence: when tensile stress is applied to the first diode from the package components, the voltage across the first terminal increases; and when compressive stress is applied to the first diode from the package components, the voltage across the first terminal decreases. The voltage across the second terminal exhibits a positive stress dependence: when tensile stress is applied to the second diode from the package components, the voltage across the second terminal increases; and when compressive stress is applied to the second diode from the package components, the voltage across the second terminal decreases. Therefore, the reference voltage output from the voltage divider circuit changes depending on the stress applied to the Zener diode from the package components.

[0008] In view of the above points, this disclosure aims to provide a reference voltage output circuit that suppresses changes in the reference voltage caused by stress changes while suppressing changes in the reference voltage caused by temperature changes. [Means for solving the problem]

[0009] According to one aspect of this disclosure, in a reference voltage output circuit, A current source (20) is positioned between the positive electrode (1) and the negative electrode (2) of a DC power supply, and a constant DC current, the main current (Ia), flows from the positive electrode to the negative electrode based on the power supply voltage between the positive electrode and the negative electrode. A Zener diode (30) is placed between the current source and the negative electrode, and generates a Zener voltage between the current source and the negative electrode due to the Zener effect when a first branch current (Ib), which is a part of the main current, flows through it. A first semiconductor section (40, 40X, 40Z, 40f, 40A) is provided between the current source and the negative electrode and has first input terminals (41, 41x, 41z, 41f, 41g), first output terminals (42, 42x, 42z, 42f, 42g) provided between the first input terminal and the negative electrode, a first P-type semiconductor provided between the first input terminal and the first output terminal and having a first N-type semiconductor that contacts the first P-type semiconductor to form a first PN junction, and a second branch current (Ic) obtained by excluding the first branch current from the main current flows from the first input terminal through the first PN junction to the first output terminal, thereby generating a first voltage (VA) between the first input terminal and the first output terminal due to the first PN junction, The semiconductor comprises a second input terminal (61, 61a, 61x, 61z) positioned between the first semiconductor section and the negative electrode, a second output terminal (62, 62a, 62x, 62z) positioned between the second input terminal and the negative electrode, a second P-type semiconductor positioned between the second input terminal and the second output terminal, and a second N-type semiconductor provided between the second P-type semiconductor and the second output terminal, which contacts the second P-type semiconductor to form a second PN junction, and a second branch current flows from the second input terminal to the second output terminal through the second PN junction, thereby generating a second voltage (VB) between the second input terminal and the second output terminal due to the second PN junction, It includes a reference voltage generation unit (50) provided between the first semiconductor unit and the second semiconductor unit, which outputs a reference voltage (Vref), The Zener diode, the first semiconductor section, and the second semiconductor section are configured to be covered by a package component (76). The Zener voltage has a temperature dependence in which the Zener voltage changes with the temperature of the Zener diode, the first voltage has a temperature dependence in which the first voltage changes with the temperature of the first semiconductor part and a stress dependence in which the first voltage changes due to the stress applied from the package component to the first semiconductor part, the second voltage has a temperature dependence in which the second voltage changes with the temperature of the second semiconductor part and a stress dependence in which the second voltage changes due to the stress applied from the package component to the second semiconductor part, and when the voltage obtained by dropping the Zener voltage by the amount of the first voltage is taken as the third voltage (VZ-VA), The reference voltage generation unit outputs a reference voltage obtained by adding a voltage obtained by multiplying the third voltage by a first weight and a voltage obtained by multiplying the second voltage by a second weight, so as to cancel out the stress dependence of the first voltage and the stress dependence of the second voltage, while canceling out the temperature dependence of the Zener voltage with the temperature dependence of the first voltage and the temperature dependence of the second voltage. Therefore, it is possible to provide a reference voltage output circuit that suppresses changes in the reference voltage caused by stress changes while suppressing changes in the reference voltage caused by temperature changes.

[0010] According to another aspect of this disclosure, in a reference voltage output circuit, A current source (20) is positioned between the positive electrode (1) and the negative electrode (2) of a DC power supply, and a constant DC current, the main current (Ia), flows from the positive electrode to the negative electrode based on the power supply voltage between the positive electrode and the negative electrode. A Zener diode (30) is placed between the current source and the negative electrode, and generates a Zener voltage between the current source and the negative electrode due to the Zener effect when a first branch current (Ib), which is a part of the main current, flows through it. A first semiconductor section (40, 40X, 40Z, 40f, 40A) is provided between the current source and the negative electrode and has first input terminals (41, 41x, 41z, 41f, 41g), first output terminals (42, 42x, 42z, 42f, 42g) provided between the first input terminal and the negative electrode, a first P-type semiconductor provided between the first input terminal and the first output terminal and having a first N-type semiconductor that contacts the first P-type semiconductor to form a first PN junction, and a second branch current (Ic) obtained by excluding the first branch current from the main current flows from the first input terminal through the first PN junction to the first output terminal, thereby generating a first voltage (VA) between the first input terminal and the first output terminal due to the first PN junction, The semiconductor comprises a second input terminal (61, 61a, 61x, 61z) positioned between the first semiconductor section and the negative electrode, a second output terminal (62, 62a, 62x, 62z) positioned between the second input terminal and the negative electrode, a second P-type semiconductor positioned between the second input terminal and the second output terminal, and a second N-type semiconductor provided between the second P-type semiconductor and the second output terminal, which contacts the second P-type semiconductor to form a second PN junction, and a second branch current flows from the second input terminal to the second output terminal through the second PN junction, thereby generating a second voltage (VB) between the second input terminal and the second output terminal due to the second PN junction, It includes a reference voltage generation unit (50) provided between the first semiconductor unit and the second semiconductor unit, which outputs a reference voltage (Vref), The Zener diode, the first semiconductor section, and the second semiconductor section are configured to be covered by a package component (76). The Zener voltage has a temperature dependence in which the Zener voltage changes with the temperature of the Zener diode, and a stress dependence in which the Zener voltage changes due to the stress applied from the package components to the Zener diode; the first voltage has a temperature dependence in which the first voltage changes with the temperature of the first semiconductor part, and a stress dependence in which the first voltage changes due to the stress applied from the package components to the first semiconductor part; the second voltage has a temperature dependence in which the second voltage changes with the temperature of the second semiconductor part, and a stress dependence in which the second voltage changes due to the stress applied from the package components to the second semiconductor part; and when the voltage obtained by dropping the Zener voltage by the amount of the first voltage is taken as the third voltage (VZ-VA), The reference voltage generation unit outputs a reference voltage obtained by adding a voltage obtained by multiplying the third voltage by a first weight and a voltage obtained by multiplying the second voltage by a second weight, so as to cancel out the temperature dependence of the Zener voltage with the temperature dependence of the first voltage and the temperature dependence of the second voltage, cancel out the stress dependence of the first voltage and the stress dependence of the second voltage, and cancel out the stress dependence of the Zener voltage with the stress dependence of the first voltage. Therefore, it is possible to provide a reference voltage output circuit that suppresses changes in the reference voltage caused by stress changes while suppressing changes in the reference voltage caused by temperature changes. The reference numerals in parentheses attached to each component indicate an example of the correspondence between that component and the specific components described in the embodiments described later. [Brief explanation of the drawing]

[0011] [Figure 1] This is an electrical circuit diagram showing the overall configuration of the reference voltage output circuit in the first embodiment of this disclosure, illustrating the connection relationships between the current source, Zener diode, two transistors, and resistor voltage divider circuit. [Figure 2] Figure 1 is a cross-sectional view of an integrated circuit device containing an IC chip that constitutes the reference voltage output circuit in the first embodiment, and is a diagram for explaining the temperature dependence and stress dependence of the Zener voltage, first voltage, and second voltage. [Figure 3]It is an electrical circuit diagram showing the overall configuration of the reference voltage output circuit in the comparative example of the first embodiment, and is a diagram showing the connection relationship of a current source, a Zener diode, two diodes, and a resistor voltage dividing circuit. [Figure 4] It is an electrical circuit diagram showing the overall configuration of the reference voltage output circuit in the second embodiment of the present disclosure, and is a diagram showing the connection relationship of a current source, a Zener diode, two transistors, and a resistor voltage dividing circuit. [Figure 5] It is an electrical circuit diagram showing the details of the electrical circuit configuration of the resistor voltage dividing circuit of the reference voltage output circuit in the second embodiment of FIG. 4, and is a diagram showing the connection relationship of a plurality of resistor elements and a plurality of switches. [Figure 6] It is an electrical circuit diagram showing the overall configuration of the reference voltage output circuit in the third embodiment of the present disclosure, and is a diagram showing the connection relationship of a current source, a Zener diode, a diode, a transistor, and a resistor voltage dividing circuit. [Figure 7] It is an electrical circuit diagram showing the overall configuration of the reference voltage output circuit in the fourth embodiment of the present disclosure, and is a diagram showing the connection relationship of a current source, a Zener diode, two diodes, a transistor, and a resistor voltage dividing circuit. [Figure 8] It is an electrical circuit diagram showing the overall configuration of the reference voltage output circuit in the fifth embodiment of the present disclosure, and is a diagram showing the connection relationship of a current source, two diodes, two Zener diodes, and a resistor voltage dividing circuit. [Figure 9] It is an electrical circuit diagram showing the overall configuration of the reference voltage output circuit in the sixth embodiment of the present disclosure, and is a diagram showing the connection relationship of a current source, two Zener diodes, two diodes, and a resistor voltage dividing circuit. [Figure 10] It is an electrical circuit diagram showing the overall configuration of the reference voltage output circuit in the seventh embodiment of the present disclosure, and is a diagram showing the connection relationship of a current source, two Zener diodes, two diodes, and a resistor voltage dividing circuit. [Figure 11] It is an electrical circuit diagram showing the overall configuration of the reference voltage output circuit in the eighth embodiment of the present disclosure, and is a diagram showing the connection relationship of a current source, one Zener diode, two transistors, and a resistor voltage dividing circuit.

Mode for Carrying Out the Invention

[0012] Hereinafter, embodiments of the present disclosure will be described based on the drawings. In the following embodiments, parts that are the same or equivalent to each other are denoted by the same reference numerals in the drawings for the sake of simplicity of explanation. (First Embodiment) As shown in FIG. 1, the reference voltage output circuit 10 includes a current source 20, a Zener diode 30, a transistor 40, a resistor voltage dividing circuit 50, and a transistor 60. The current source 20 is disposed between the positive electrode 1 and the negative electrode 2 of the DC power supply. The current source 20 is a constant current source that flows a main current Ia, which is a constant DC current, from the positive electrode 1 to the negative electrode 2 based on the power supply voltage (i.e., DC voltage) between the positive electrode 1 and the negative electrode 2.

[0013] In this embodiment, the Zener diode 30 is disposed between the current source 20 and the negative electrode 2. The transistors 40, 60, and the resistor voltage dividing circuit 50 are disposed between the current source 20 and the negative electrode 2. Therefore, the transistors 40, 60, the resistor voltage dividing circuit 50, and the Zener diode 30 are disposed in parallel between the current source 20 and the negative electrode 2. A branch current Ib as a first branch current flows through the Zener diode 30. The branch current Ib is a part of the main current Ia. A branch current Ic as a second branch current flows through the transistors 40, 60, and the resistor voltage dividing circuit 50. The branch current Ic is the remaining current of the main current Ia other than the branch current Ib.

[0014] The Zener diode 30 has a cathode terminal 31 connected to the current source 20 and an anode terminal 32 connected to the negative electrode 2. The Zener diode 30 generates a Zener voltage caused by the Zener effect between the cathode terminal 31 and the anode terminal 32 when the branch current Ib flows from the current source 20. That is, the Zener diode 30 generates a Zener voltage caused by the Zener effect between the current source 20 and the negative electrode 2.

[0015] Transistor 40 has a collector terminal 41 as a first input terminal connected to the current source 20 and an emitter terminal 42 as a first output terminal connected to the resistive voltage divider circuit 50. Transistor 40 is a first semiconductor part having a base terminal 43 connected to the collector terminal 41. Thus, transistor 40 is diode-connected. In this embodiment, a bipolar junction transistor (i.e., BJT) is used as transistor 40. BJT is an abbreviation for Bipolar junction transistor. Hereafter, bipolar junction transistor will also be referred to as BJT. An NPN type transistor is used as transistor 40. Transistor 40 comprises an N-type semiconductor placed between the current source 20 and the resistive voltage divider circuit 50, a P-type semiconductor placed between the N-type semiconductor and the resistive voltage divider circuit 50, and an N-type semiconductor placed between the P-type semiconductor and the resistive voltage divider circuit 50.

[0016] For the sake of clarity in this explanation, the two N-type semiconductors constituting transistor 40 will be described as follows to distinguish them: The N-type semiconductor located between the current source 20 and the P-type semiconductor will be referred to as the positive N-type semiconductor, and the N-type semiconductor located between the P-type semiconductor and the resistive voltage divider circuit 50 will be referred to as the negative N-type semiconductor. The collector terminal 41 is connected to the positive N-type semiconductor. The base terminal 43 is connected to the P-type semiconductor. The P-type semiconductor is the first P-type semiconductor that contacts the negative N-type semiconductor to form the first PN junction. The negative N-type semiconductor is the first N-type semiconductor to which the emitter terminal 42 is connected. Hereinafter, transistors 40 and 60 will be collectively referred to as transistors 40 and 60.

[0017] The resistive voltage divider circuit 50 in Figure 1 is a reference voltage generation unit positioned between transistors 40 and 60. The resistive voltage divider circuit 50 comprises a resistive element 50a and a resistive element 50b. The resistive elements 50a and 50b are collectively referred to as resistive elements 50a and 50b. The resistive elements 50a and 50b are connected in series between transistors 40 and 60. Furthermore, resistive element 50a is positioned on the transistor 40 side relative to resistive element 50b. The resistive elements 50a and 50b constitute a common connection terminal 51 that is commonly connected to each other. In this embodiment, the common connection terminal 51 is connected to an output unit 52. The output unit 52 outputs a reference voltage Vref, as will be described later.

[0018] Transistor 60 is positioned between the resistive voltage divider circuit 50 and the negative electrode 2. Transistor 60 has an emitter terminal 61 as a second input terminal connected to the resistive voltage divider circuit 50 and a collector terminal 62 as a second output terminal connected to the negative electrode 2. Transistor 60 is a second semiconductor part having a base terminal 63 connected to the collector terminal 62. As a result, transistor 60 is diode-connected. In this embodiment, a BJT is used as transistor 60, similar to transistor 40.

[0019] A PNP type transistor is used as transistor 60. Transistor 60 comprises a P-type semiconductor placed between the resistive voltage divider circuit 50 and the negative electrode 2, an N-type semiconductor placed between this P-type semiconductor and the negative electrode 2, and a P-type semiconductor placed between the N-type semiconductor and the negative electrode 2. For the sake of explanation, the two P-type semiconductors constituting transistor 60 will be distinguished as follows: The P-type semiconductor placed between the resistive voltage divider circuit 50 and the N-type semiconductor will be referred to as the positive P-type semiconductor, and the P-type semiconductor placed between the N-type semiconductor and the negative electrode 2 will be referred to as the negative P-type semiconductor. The emitter terminal 61 is connected to the positive P-type semiconductor. The positive P-type semiconductor is a second P-type semiconductor that contacts the N-type semiconductor to form a second PN junction. The N-type semiconductor is a second N-type semiconductor to which the base terminal 63 is connected. The collector terminal 62 is connected to the negative P-type semiconductor.

[0020] The current source 20, Zener diode 30, transistors 40 and 60, and resistor voltage divider circuit 50 of this embodiment constitute the IC chip 71 shown in Figure 2. That is, the IC chip 71 includes the current source 20, Zener diode 30, transistors 40 and 60, and resistor voltage divider circuit 50. Figure 2 is a cross-sectional view of the integrated circuit device 70 including the IC chip 71 of this embodiment. The IC chip 71, together with a base 72, adhesive layer 73, multiple lead frames 74, multiple bonding wires 75, and resin components 76, constitute the integrated circuit device 70. The IC chip 71 is located on one side of the base 72 in the thickness direction Ya.

[0021] The IC chip 71 is fixed to one side of the base 72 in the thickness direction Ya by an adhesive layer 73. Multiple lead frames 74 electrically connect the circuit board outside the integrated circuit device 70 to the IC chip 71. Multiple bonding wires 75 each electrically connect one end 74a of the multiple lead frames 74 to the IC chip 71. Each of the multiple bonding wires 75 is connected to the multiple lead frames 74 via pads 77. Each of the multiple lead frames 74 has one end 74a positioned inside the resin part 76.

[0022] The other end 74b of each of the multiple lead frames 74 is positioned outside the resin component 76. The IC chip 71, base 72, adhesive layer 73, multiple lead frames 74, and multiple bonding wires 75 are covered by the resin component 76 from one side and the other side in the thickness direction Ya. The resin component 76 is a component made of an electrically insulating resin material. The integrated circuit device 70 of this embodiment is used, for example, as an in-vehicle electronic component. The resin component 76, together with the base 72, constitutes a package component formed to cover the IC chip 71. Next, the operation of the reference voltage output circuit 10 of this embodiment will be described with reference to Figures 1, 2, and 3.

[0023] First, the current source 20 supplies a main current Ia from the positive electrode 1 to the negative electrode 2 based on the power supply voltage between the positive electrode 1 and the negative electrode 2. A portion of the main current Ia, the branch current Ib, flows from the current source 20 to the negative electrode 2 through the Zener diode 30. Consequently, the Zener diode 30 generates a Zener voltage VZ between the current source 20 and the negative electrode 2 due to the Zener effect. Meanwhile, the branch current Ic, which is the main current Ia other than the branch current Ib, flows from the current source 20 to the negative electrode 2 through transistors 40 and 60 and resistors 50a and 50b.

[0024] A portion of the branch current Ic flows as the base current from the base terminal 43 of transistor 40 through the first PN junction to the emitter terminal 42. As a result, transistor 40 turns on. Consequently, in transistor 40, the remaining current of the branch current Ic, excluding the base current, flows from the collector terminal 41 through the first PN junction to the emitter terminal 42. Therefore, the branch current Ic flows from the collector terminal 41 through the first PN junction to the emitter terminal 42. Consequently, a voltage VA caused by the first PN junction is generated between the collector terminal (i.e., the first input terminal) 41 and the emitter terminal 42 (i.e., the second output terminal).

[0025] Furthermore, the branch current Ic flows from the emitter terminal 61 of transistor 60 through the second PN junction to the N-type semiconductor. Of this incoming branch current Ic, the base current flows out from the N-type semiconductor to the base terminal 63. This outflowing base current bypasses the negative P-type semiconductor and flows to the collector terminal 62. As a result, transistor 60 turns on. Therefore, the remaining current of the branch current Ic, excluding the base current, flows from the N-type semiconductor through the negative P-type semiconductor and the collector terminal 62 to the negative electrode 2.

[0026] Therefore, the branch current Ic flows from the emitter terminal 61 through the second P-type semiconductor and the collector terminal 62 to the negative electrode 2. As a result, a second voltage VB, which is caused by the second PN junction, is generated between the emitter terminal 61 and the collector terminal 62. Furthermore, as shown in equation 1, the resistive voltage divider circuit 50 outputs a voltage Vref as the reference voltage Vref from the common connection terminal 51. This voltage is obtained by adding the voltage VZ-VA (a voltage obtained by stepping down the Zener voltage VZ by a voltage VA) to a first weight, and the voltage VB to a second weight.

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[0027] Let R1 be the resistance of resistor element 50a, and R2 be the resistance of resistor element 50b. In equation 1, the first weight is the division value obtained by dividing R2 by R1+R2, which is the sum of R1 and R2. The second weight is the division value obtained by dividing R1 by R1+R2. Therefore, the reference voltage Vref is the voltage obtained by superimposing the divided voltage obtained by dividing the voltage VZ-VA by resistor elements 50a and 50b, and the divided voltage obtained by dividing the voltage VB by resistor elements 50a and 50b.

[0028] For example, when the integrated circuit device 70 is mounted in an automobile, the ambient temperature around the integrated circuit device 70 may rise, and heat may be transferred from the surrounding area of ​​the integrated circuit device 70 to the IC chip 71 through the resin component 76. In this case, the temperature of both the resin component 76 and the IC chip 71 will rise. The Zener voltage VZ has a temperature dependence. This temperature dependence is positive, meaning that as the temperature of the Zener diode 30 rises, the Zener voltage VZ increases, while as the temperature of the Zener diode 30 decreases, the Zener voltage VZ decreases. The voltage VA also has a temperature dependence. This temperature dependence is negative, meaning that as the temperature of the transistor 40 rises, the voltage VA decreases, while as the temperature of the transistor 40 decreases, the voltage VA increases.

[0029] Therefore, the voltage VZ-VA has a positive temperature dependence. As a result, when the temperature of the Zener diode 30 and the temperature of the transistor 60 rise, the voltage VZ-VA increases. When the temperature of the Zener diode 30 and the temperature of the transistor 60 decrease, the voltage VZ-VA decreases. In addition, the voltage VB has a temperature dependence. This temperature dependence is negative; as the temperature of the transistor 60 rises, the voltage VB decreases, while as the temperature of the transistor 60 decreases, the voltage VB increases.

[0030] For example, in the packaging process of an integrated circuit device 70, when the IC chip 71 is fixed to the base 72 with adhesive, stress is applied to the IC chip 71 from the adhesive as the adhesive hardens and shrinks. For example, after the die bonding process, when the area around the IC chip 71 is covered with resin material to form a resin component 76, stress is applied to the IC chip 71 from the resin component 76 as the resin material hardens and shrinks.

[0031] Furthermore, the resin material expands or contracts due to heat and humidity, and as a result, stress is applied to the IC chip 71 from the resin component 76. For example, when a packaged integrated circuit device 70 is soldered onto a circuit board, the molten solder hardens and shrinks, generating stress in the solder. This stress is applied to the IC chip 71 through the multiple lead frames 74 and the resin component 76. Such stress caused by temperature changes, humidity, soldering, etc., is applied to the IC chip 71 from the resin component 76, i.e., the package component.

[0032] Therefore, in this embodiment, stress is applied from the resin component 76 to the Zener diode 30, transistors 40 and 60. The Zener voltage VZ has a stress dependence due to the piezoelectric junction effect. The stress dependence is positive, meaning that when tensile stress is applied to the Zener diode 30, the Zener voltage VZ increases, and when compressive stress is applied to the Zener diode 30, the Zener voltage VZ decreases.

[0033] Voltage VA has a stress dependence due to the piezoelectric junction effect. The stress dependence is positive, meaning that when tensile stress is applied to transistor 40, voltage VA increases, while when compressive stress is applied to transistor 40, voltage VA decreases as the tensile stress decreases. Voltage VB also has a positive stress dependence due to the piezoelectric junction effect. The stress dependence is positive, meaning that when tensile stress is applied to transistor 60, voltage VB increases, while when compressive stress is applied to transistor 60, voltage VB decreases as the tensile stress decreases.

[0034] Here, let σ be the stress exerted by the resin component 76 on the Zener diode 30, transistors 40 and 60. Furthermore, the partial derivative of the reference voltage Vref with respect to stress is taken as the stress coefficient of the reference voltage Vref. The partial derivative of the Zener voltage VZ with respect to stress is taken as the stress coefficient of the Zener voltage VZ. The stress coefficient of the Zener voltage VZ is the value obtained by dividing ∂VZ by ∂σ. The partial derivative of the voltage VA with respect to stress is taken as the stress coefficient of the voltage VA. The partial derivative of the voltage VB with respect to stress is taken as the stress coefficient of the voltage VB.

[0035] The stress coefficient of the reference voltage Vref can be expressed by the stress coefficient of the Zener voltage VZ, the stress coefficient of voltage VA, and the stress coefficient of voltage VB, as shown in equation 2.

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[0036] In this embodiment, the resistive voltage divider circuit 50 uses a reference voltage Vref obtained by adding the voltage obtained by multiplying the voltage VZ-VA by a first weight and the voltage obtained by multiplying the voltage VB by a second weight, as described above. As a result, the temperature dependence of the Zener voltage VZ is canceled out by the temperature dependence of the voltage VA and the temperature dependence of the voltage VB. In addition, the stress dependence of the voltage VA and the stress dependence of the voltage VB cancel each other out. Furthermore, the stress dependence of the Zener voltage VZ is canceled out by the stress dependence of the voltage VA.

[0037] According to the embodiment described above, the reference voltage output circuit 10 comprises a current source 20, a Zener diode 30, transistors 40 and 60, and a resistive voltage divider circuit 50. The current source 20 is positioned between the positive electrode 1 and the negative electrode 2 of a DC power supply and flows a main current Ia from the positive electrode 1 to the negative electrode 2 based on the power supply voltage between the positive electrode 1 and the negative electrode 2. The Zener diode 30 is positioned between the current source 20 and the negative electrode 2 and has a cathode terminal 31 connected to the current source 20 and an anode terminal 32 connected to the negative electrode 2.

[0038] The Zener diode 30 generates a Zener voltage between the current source 20 and the negative electrode 2 due to the Zener effect, as a portion of the main current Ia, specifically branch current Ib, flows between the cathode terminal 31 and the anode terminal 32 of the Zener diode 30. The transistor 40 includes a collector terminal 41 connected to the current source 20 and an emitter terminal 42 connected to the negative electrode 2. The transistor 40 has a first P-type semiconductor positioned between the collector terminal 41 and the emitter terminal 42, and a first N-type semiconductor provided between the first P-type semiconductor and the emitter terminal 42, which contacts the first P-type semiconductor to form a first PN junction.

[0039] The branch current Ic, which is the main current Ia excluding a portion of the branch current Ib, flows between the collector terminal 41 and the emitter terminal 42 through the first PN junction of transistor 40. As a result, a voltage VA originating from the first PN junction is generated between the collector terminal 41 and the emitter terminal 42. Transistor 60 is positioned between the resistive voltage divider circuit 50 and the negative electrode 2. Transistor 60 has an emitter terminal 61 connected to the resistive voltage divider circuit 50 and a collector terminal 62 connected to the negative electrode 2.

[0040] Transistor 60 has a second P-type semiconductor positioned between the emitter terminal 61 and the collector terminal 62, and a second N-type semiconductor provided between the second P-type semiconductor and the collector terminal 62, and in contact with the second P-type semiconductor to form a second PN junction. A branch current Ic flows through the second PN junction of transistor 60 between the emitter terminal 61 and the collector terminal 62. As a result, a voltage VB caused by the second PN junction is generated between the emitter terminal 61 and the collector terminal 62. A resistive voltage divider circuit 50 is provided between transistors 40 and 60 and outputs a reference voltage Vref from the output unit 52. The Zener diode 30, transistors 40 and 60 are covered by a resin component 76.

[0041] The Zener voltage VZ has a temperature dependence, where the Zener voltage VZ increases with increasing temperature of the Zener diode 30. The Zener voltage VZ also has a stress dependence, where the Zener voltage VZ increases when tensile stress is applied to the Zener diode 30 from the resin component 76, and decreases when compressive stress is applied to the Zener diode 30 from the resin component 76. The voltage VA has a temperature dependence, where the voltage VA decreases with increasing temperature of the transistor 40. The voltage VA increases when tensile stress is applied to the transistor 40 from the resin component 76, and decreases when compressive stress is applied to the transistor 40 from the resin component 76. The voltage VB has a temperature dependence, where the voltage VB decreases with increasing temperature of the transistor 60. The voltage VB increases when tensile stress is applied to the transistor 60 from the resin component 76, and decreases when compressive stress is applied to the transistor 60 from the resin component 76.

[0042] Here, the voltage obtained by dropping the Zener voltage VZ by a voltage component VA (i.e., the first voltage component) is defined as voltage VZ-VA, and voltage VZ-VA corresponds to the third voltage. The resistive voltage divider circuit 50 outputs a reference voltage Vref, which is the sum of the voltage VZ-VA multiplied by the first weight and the voltage VB multiplied by the second weight. As a result, the temperature dependence of the Zener voltage VZ is canceled out by the temperature dependence of voltage VA and voltage VB. In addition, the stress dependence of voltage VA and the stress dependence of voltage VB are canceled out. Furthermore, the stress-dependent voltage of the Zener voltage VZ is canceled out by the stress dependence of voltage VA. Thus, a reference voltage output circuit 10 is provided that suppresses changes in the reference voltage Vref caused by temperature changes while suppressing changes in the reference voltage Vref caused by stress changes.

[0043] In contrast, as shown in Figure 3, a reference voltage output circuit 10A can be considered in which diodes 3a and 3b are connected in series between the resistive voltage divider circuit 50 and the negative electrode 2. Diode 3a has its anode terminal connected to the resistive element 50b and its cathode terminal connected to the anode terminal of diode 3b. Diode 3b has its anode terminal connected to the cathode terminal of diode 3a and its cathode terminal connected to the negative electrode 2. In this case, a branch current Ic flows from the current source 20 through the resistive elements 50a and 50b and diodes 3a and 3b to the negative electrode 2. At this time, a voltage VD1 is generated between the anode and cathode terminals of diode 3a due to the PN junction of diode 3a. A voltage VD2 is generated between the anode and cathode terminals of diode 3b due to the PN junction of diode 3b. In Zener diode 30, the Zener voltage generated between the cathode terminal 31 and the anode terminal 32 due to the Zener effect is denoted as VZ. Let the sum of voltages VD1 and VD2 be defined as voltage VD1+VD2.

[0044] As shown in equation 3, the resistive voltage divider circuit 50 outputs a reference voltage Vref from the common connection terminal 51, which is obtained by adding the voltage obtained by multiplying the Zener voltage VZ by the first weight and the voltage obtained by multiplying the voltage VD1 + VD2 by the second weight.

number

[0045] Therefore, the resistive voltage divider circuit 50 can suppress changes in the reference voltage Vref due to temperature changes. Also, when the reference voltage output circuit 10A is configured as an integrated circuit device in the same way as the reference voltage output circuit 10A of the first embodiment, stress may be applied to the Zener diode 30, diodes 3a and 3b from the package components. In this case, the stress coefficient of the reference voltage Vref obtained by partially differentiating the reference voltage Vref with respect to stress can be expressed by the formula in Equation 4.

number

[0046] Here, tensile stress is represented by a positive value, and compressive stress by a negative value. In equation 4, the stress coefficient of the Zener voltage VZ is a positive value. That is, when tensile stress is applied to the Zener diode 30 from the package component, the Zener voltage VZ increases. When compressive stress is applied to the Zener diode 30 from the package component, the Zener voltage VZ decreases. The stress coefficient of the voltage VD1 obtained by partially differentiating the voltage VD1 with respect to stress is a positive value. Therefore, when tensile stress is applied to the diode 3a from the package component, the voltage VD1 increases, and when compressive stress is applied to the diode 3a from the package component, the voltage VD1 decreases. The stress coefficient of the voltage VD2 obtained by partially differentiating the voltage VD2 with respect to stress is a positive value. Therefore, when tensile stress is applied to the diode 3b from the package component, the voltage VD2 increases, and when compressive stress is applied to the diode 3b from the package component, the voltage VD2 decreases. Therefore, the stress coefficient of the reference voltage Vref is positive. As a result, the reference voltage Vref changes due to the stress applied by package components, etc.

[0047] In contrast, in the reference voltage output circuit 10 of this embodiment, as described above, the stress dependence of voltage VA and the stress dependence of voltage VB cancel each other out, and the stress dependence of Zener voltage VZ is canceled out by the stress dependence of voltage VA. Therefore, as described above, it is possible to suppress changes in the reference voltage Vref due to stress changes supplied by package components, etc. In this embodiment, the following effects (a), (b), and (c) can be obtained.

[0048] (a) Transistor 40 is diode-connected by connecting its base terminal 43 to its collector terminal 41. This allows transistor 40 to generate a voltage VA due to the PN junction with a simple configuration. (b) Similarly, transistor 60 is diode-connected by connecting its base terminal 63 to its collector terminal 62. This allows transistor 60 to generate a voltage VB due to the second PN junction with a simple configuration.

[0049] (c) The resistive voltage divider circuit 50 has resistive elements 50a and 50b connected in series between transistor 40 and transistor 60. The resistive voltage divider circuit 50 determines the voltage obtained by dividing the voltage VZ-VA by resistive elements 50a and 50b as the voltage obtained by multiplying the voltage VZ-VA by a weight. The resistive voltage divider circuit 50 determines the voltage obtained by dividing the voltage VB by resistive elements 50a and 50b as the voltage VB multiplied by a weight. Therefore, the voltage obtained by multiplying the voltage VZ-VA by a first weight and the voltage obtained by multiplying the voltage VB by a second weight can be easily determined.

[0050] (Second Embodiment) In the first embodiment described above, an example was described in which a reference voltage Vref is output from the common connection terminal 51 of two resistor elements 50a and 50b of the resistor voltage divider circuit 50. However, instead, this second embodiment, in which a reference voltage Vref of an appropriate voltage value is output using three or more resistor elements, will be described with reference to Figures 4 and 5. Figure 4 is a circuit diagram showing the overall electrical circuit configuration of the reference voltage output circuit 10. Figure 5 is a circuit diagram showing the details of the electrical circuit configuration of the resistor voltage divider circuit 50 in Figure 4. The reference voltage output circuit 10 of this embodiment and the reference voltage output circuit 10 of the first embodiment differ in the circuit configuration of the resistive voltage divider circuit 50. The resistive voltage divider circuit 50 of the reference voltage output circuit 10 of this embodiment will be described below. In Figure 4, the same reference numerals as in Figure 1 indicate the same components, and their descriptions are omitted.

[0051] As shown in Figure 4, the resistive voltage divider circuit 50 of this embodiment comprises resistive elements 50a and 50f and a switch circuit 50A. The resistive elements 50a and 50f and the switch circuit 50A are connected in series between transistors 40 and 60. Resistive element 50a is located between transistor 40 and switch circuit 50A. Switch circuit 50A is located between resistive elements 50a and 50f. Resistive element 50f is located between switch circuit 50A and transistor 60.

[0052] As shown in Figure 5, the switch circuit 50A comprises resistors 50b, 50c, 50d, and 50e, switches SW1, SW2, SW3, SW4, and SW5, an output unit 52, and a control circuit 53. The resistors 50b, 50c, 50d, and 50e are connected in series between resistors 50a and 50f. Therefore, the resistors 50a, 50b, 50c, 50d, 50e, and 50f are arranged in the order of resistor 50a, resistor 50b, resistor 50c, resistor 50d, resistor 50e, and resistor 50f from transistor 40 to transistor 60. For the sake of convenience in this explanation, the resistors 50a, 50b, 50c, 50d, 50e, and 50f will be collectively referred to as resistors 50a to 50f. Switches SW1, SW2, SW3, SW4, and SW5 are collectively referred to as switches SW1-SW5.

[0053] Resistor elements 50a to 50f form common connection terminals 51a, 51b, 51c, 51d, and 51e, where two adjacent resistor elements from among 50a to 50f are connected in common. Hereinafter, common connection terminals 51a, 51b, 51c, 51d, and 51e will be collectively referred to as common connection terminals 51a to 51e. Common connection terminal 51a is the terminal to which resistor elements 50a and 50b are connected in common. Common connection terminal 51b is the terminal to which resistor elements 50b and 50c are connected in common. Common connection terminal 51c is the terminal to which resistor elements 50c and 50d are connected in common. Common connection terminal 51d is the terminal to which resistor elements 50d and 50e are connected in common. Common connection terminal 51e is the terminal to which resistor elements 50e and 50f are connected in common.

[0054] Switch SW1 is located between the common connection terminal 51a and the output unit 52. Switch SW1 connects or disconnects the common connection terminal 51a and the output unit 52. Switch SW2 is located between the common connection terminal 51b and the output unit 52. Switch SW2 connects or disconnects the common connection terminal 51b and the output unit 52. Switch SW3 is located between the common connection terminal 51c and the output unit 52. Switch SW3 connects or disconnects the common connection terminal 51c and the output unit 52. Switch SW4 is located between the common connection terminal 51d and the output unit 52. Switch SW4 connects or disconnects the common connection terminal 51d and the output unit 52. Switch SW5 is located between the common connection terminal 51e and the output unit 52. Switch SW5 connects or disconnects the common connection terminal 51e and the output unit 52.

[0055] The output unit 52 outputs the voltage between one of the common connection terminals 51a to 51e and the negative electrode 2 as the reference voltage Vref. The control circuit 53 turns on one of the switches SW1, SW2, SW3, SW4, and SW5, and turns off the remaining four switches. As a result, the output voltage of one of the common connection terminals 51a to 51e is output from the output unit 52 as the reference voltage Vref. Next, the operation of the reference voltage output circuit 10 of this embodiment will be described with reference to Figures 4 and 5.

[0056] First, the current source 20 supplies a main current Ia from the positive electrode 1 to the negative electrode 2 based on the power supply voltage between the positive electrode 1 and the negative electrode 2. Of the main current Ia, a branch current Ib flows from the current source 20 through the Zener diode 30 to the negative electrode 2. Consequently, the Zener diode 30 generates a Zener voltage VZ due to the Zener effect between the current source 20 and the negative electrode 2. Meanwhile, the branch current Ic, which is the main current Ia other than the branch current Ib, flows to the negative electrode 2 through the transistor 40, the resistors 50a to 50f, and the transistor 60.

[0057] The control circuit 53 turns on one of the switches SW1 to SW5 and turns off the remaining four switches. This connects the common connection terminal 51a to 51e corresponding to one of the switches to the output unit 52. Consequently, the voltage between the common connection terminal 51a to 51e corresponding to one of the switches and the negative electrode 2 is output from the output unit 52 as the reference voltage Vref.

[0058] For example, the control circuit 53 turns on switch SW3 and turns off switches SW1, SW2, SW4, and SW5. As a result, the common connection terminal 51c is connected to the negative electrode 2, and the common connection terminals 51a, 51b, 51d, and 51e are opened to the negative electrode 2. Therefore, the voltage between the common connection terminal 51c and the negative electrode 2 is output from the output unit 52 as the reference voltage Vref. The resistive voltage divider circuit 50 outputs a reference voltage Vref from the common connection terminal 51c, which is obtained by adding the voltage obtained by multiplying the voltage VZ-VA (a voltage stepped down by a voltage VA) from the Zener voltage VZ by a first weight, and the voltage obtained by multiplying the voltage VB by a second weight, as shown in equation 5.

[0059]

number

[0060] The second weight is the division value obtained by dividing R1+R2+R3 by R1+R2+R3+R4+R5+R6. R1+R2+R3 is the sum of the resistance values ​​of R1, R2, and R3. The reference voltage Vref is the superposition of the divided voltage obtained by dividing the voltage VZ-VA through the resistors 50a, 50b, 50c, 50d, 50e, and 50f, and the divided voltage obtained by dividing the voltage VB through the resistors 50a, 50b, 50c, 50d, 50e, and 50f. Furthermore, the stress coefficient of the reference voltage Vref can be expressed by the stress coefficient of the Zener voltage VZ, the stress coefficient of the voltage VA, and the stress coefficient of the voltage VB, as shown in equation 6.

[0061]

number

[0062] In this embodiment, the resistive voltage divider circuit 50 uses a reference voltage Vref obtained by adding the voltage obtained by multiplying the voltage VZ-VA by a first weight and the voltage obtained by multiplying the voltage VB by a second weight, as described above. As a result, the temperature dependence of the Zener voltage VZ is canceled out by the temperature dependence of the voltage VA and the temperature dependence of the voltage VB. In addition, the stress dependence of the voltage VA and the stress dependence of the voltage VB are canceled out, and the stress dependence of the Zener voltage VZ is canceled out by the stress dependence of the voltage VA.

[0063] According to the embodiment described above, the resistive voltage divider circuit 50 comprises resistive elements 50a to 50f, an output unit 52 that outputs a reference voltage Vref, and switches SW1 to SW5. The resistive elements 50a to 50f constitute common connection terminals 51a to 51f, where two adjacent resistive elements from among the resistive elements 50a to 50f are commonly connected. Switches SW1 to SW5 connect one of the common connection terminals 51a to 51f to the output unit 52, and open the connection between the output unit 52 and the remaining common connection terminals 51a to 51f other than the one common connection terminal.

[0064] As a result, the reference voltage output circuit 10 outputs the voltage between one of the common connection terminals 51a to 51f and the negative electrode 2 as the reference voltage Vref from the output unit 52. Therefore, by outputting the output voltage of one of the common connection terminals 51a to 51f as the reference voltage Vref from the output unit 52, the output unit 52 can output a reference voltage Vref with an appropriate voltage value.

[0065] (Third embodiment) In the first embodiment described above, an example was described in which a transistor 60 is placed as a second semiconductor component between the resistive voltage divider circuit 50 and the negative electrode 2 in the reference voltage output circuit 10. However, instead, this third embodiment will be described with reference to Figure 6 in which a Zener diode 60a is placed as a second semiconductor component between the resistive voltage divider circuit 50 and the negative electrode 2 in the reference voltage output circuit 10.

[0066] Figure 6 is a circuit diagram showing the circuit configuration of the reference voltage output circuit 10 of this embodiment. In Figure 6, the same reference numerals as in Figure 1 indicate the same components, and their descriptions are omitted. As shown in Figure 6, the reference voltage output circuit 10 of this embodiment includes a Zener diode 60a instead of a transistor 60. The Zener diode 60a includes an anode terminal 61a as a second input terminal connected to the resistive voltage divider circuit 50, and a cathode terminal 62a as a second output terminal connected to the negative electrode 2.

[0067] The Zener diode 60a is a second semiconductor component comprising a P-type semiconductor and an N-type semiconductor. The P-type semiconductor is a second P-type semiconductor positioned between the resistive voltage divider circuit 50 and the negative electrode 2. The anode terminal 61a is connected to the P-type semiconductor. The N-type semiconductor is a second N-type semiconductor positioned between the P-type semiconductor and the negative electrode 2. The N-type semiconductor contacts the P-type semiconductor to form a second PN junction. The cathode terminal is connected to the N-type semiconductor. Note that, in this embodiment, the electrical circuit configuration of the reference voltage output circuit 10, excluding the Zener diode 60a, is the same as that of the reference voltage output circuit 10 in the first embodiment described above.

[0068] Next, the operation of the reference voltage output circuit 10 of this embodiment will be described with reference to Figure 6. First, the current source 20 flows a main current Ia from the positive electrode 1 to the negative electrode 2 based on the power supply voltage between the positive electrode 1 and the negative electrode 2. In addition, a branch current Ib of the main current Ia flows from the current source 20 to the negative electrode 2 through the Zener diode 30. Consequently, the Zener diode 30 generates a Zener voltage VZ due to the Zener effect between the current source 20 and the negative electrode 2. Meanwhile, a branch current Ic flows from the current source 20 to the negative electrode 2 through the transistor 40, resistors 50a and 50b, and Zener diode 60a.

[0069] The branch current Ic flows from the collector terminal 41 of the transistor 40 through the first PN junction to the emitter terminal 42, similar to the first embodiment described above. Therefore, a voltage VA is generated between the collector terminal 41 and the emitter terminal 42 due to the first PN junction. The branch current Ic flows between the anode terminal 61a and the cathode terminal 62a through the second PN junction of the Zener diode 60a. As a result, a voltage VB is generated between the anode terminal 61a and the cathode terminal 62a due to the second PN junction.

[0070] The voltage VB has a temperature dependence. The temperature dependence is negative, meaning that as the temperature of the Zener diode 60a rises, the voltage VB decreases, while as the temperature of the Zener diode 60a decreases, the voltage VB increases. The voltage VB also has a stress dependence. The stress dependence is positive, meaning that when tensile stress is applied from the resin component 76 to the Zener diode 60a, the voltage VB increases, and when compressive stress is applied from the resin component 76 to the Zener diode 60a, the voltage VB decreases. In other words, the voltage VB of this embodiment has the same temperature dependence and stress dependence as the voltage VB of the first embodiment described above.

[0071] Similar to the first embodiment described above, the resistive voltage divider circuit 50 outputs a reference voltage Vref from the common connection terminal 51, which is obtained by adding a voltage obtained by multiplying the voltage VZ-VA (a voltage stepped down by a voltage VA) and a first weight, and a voltage obtained by multiplying the voltage VB by a second weight. As a result, the temperature dependence of the Zener voltage VZ is canceled out by the temperature dependence of voltage VA and voltage VB. In addition, the stress dependence of voltage VA and voltage VB are canceled out, and the stress dependence of the Zener voltage VZ is canceled out by the stress dependence of voltage VA.

[0072] According to the embodiment described above, the reference voltage output circuit 10 includes a Zener diode 60a that replaces the transistor 60 of the first embodiment. The Zener diode 60a has a P-type semiconductor positioned between the anode terminal 61a and the cathode terminal 62a. The Zener diode 60a also has an N-type semiconductor provided between the P-type semiconductor and the cathode terminal 62a, and in contact with the P-type semiconductor to form a second PN junction. A branch current Ic flows between the emitter terminal 61 and the collector terminal 62 of the transistor 60 through the second PN junction, causing a voltage VB at the second PN junction to be generated between the emitter terminal 61 and the collector terminal 62. The Zener diode 30, the transistor 40, and the Zener diode 60a are each covered by a resin component 76.

[0073] The Zener voltage VZ has the same temperature and stress dependence as in the first embodiment. The voltage VA has the same temperature and stress dependence as in the first embodiment. The voltage VB has the same temperature and stress dependence as in the first embodiment. The resistive voltage divider circuit 50 outputs a voltage as the reference voltage Vref, which is the sum of the voltage VZ-VA multiplied by a first weight and the voltage VB multiplied by a second weight. As a result, the temperature dependence of voltage VA and the temperature dependence of voltage VB cancel each other out, and the stress-dependent voltage of Zener voltage VZ is canceled out by the stress dependence of voltage VA. Thus, a reference voltage output circuit 10 is provided that suppresses changes in the reference voltage Vref caused by temperature changes while suppressing changes in the reference voltage Vref caused by stress changes.

[0074] (Fourth Embodiment) In the first embodiment described above, an example was described in which a transistor 60 is placed between the resistive voltage divider circuit 50 and the negative electrode 2 in the reference voltage output circuit 10. However, instead, this fourth embodiment, in which diodes 60b and 60c are placed in parallel between the resistive voltage divider circuit 50 and the negative electrode 2 in the reference voltage output circuit 10, will be described with reference to Figure 7.

[0075] Figure 7 is a circuit diagram showing the circuit configuration of the reference voltage output circuit 10 of this embodiment. In Figure 7, the same reference numerals as in Figure 1 indicate the same components, and their descriptions are omitted. As shown in Figure 7, the reference voltage output circuit 10 of this embodiment includes diodes 60b and 60c instead of transistor 60. Diode 60b includes an anode terminal as a second input terminal connected to the resistive voltage divider circuit 50 and a cathode terminal as a second output terminal connected to the negative electrode 2. Diode 60c includes an anode terminal as a second input terminal connected to the resistive voltage divider circuit 50 and a cathode terminal as a second output terminal connected to the negative electrode 2.

[0076] Diodes 60b and 60c are semiconductor elements connected in parallel between the resistive voltage divider circuit 50 and the negative electrode 2. Diodes 60b and 60c constitute the second semiconductor section 60X. The anode terminal of diode 60b and the anode terminal of diode 60c are connected in common to form the input terminal 61x of the second semiconductor section 60X. The cathode terminal of diode 60b and the cathode terminal of diode 60c are connected in common to form the output terminal 62x of the second semiconductor section 60X.

[0077] Diode 60b comprises a P-type semiconductor and an N-type semiconductor. The P-type semiconductor is placed between the resistive voltage divider circuit 50 and the negative electrode 2. The anode terminal is connected to the P-type semiconductor. The N-type semiconductor is placed between the P-type semiconductor and the negative electrode 2. The N-type semiconductor is in contact with the P-type semiconductor to form a second PN junction. The cathode terminal is connected to the N-type semiconductor. Diode 60c comprises a P-type semiconductor and an N-type semiconductor. The P-type semiconductor is placed between the resistive voltage divider circuit 50 and the negative electrode 2. The anode terminal is connected to the P-type semiconductor. The N-type semiconductor is placed between the P-type semiconductor and the negative electrode 2. The N-type semiconductor is in contact with the P-type semiconductor to form a second PN junction. The cathode terminal is connected to the N-type semiconductor.

[0078] Furthermore, the P-type semiconductor of diode 60b and the P-type semiconductor of diode 60c each constitute a second P-type semiconductor. The N-type semiconductor of diode 60b and the N-type semiconductor of diode 60c each constitute a second N-type semiconductor. In this embodiment, the electrical circuit configuration of the reference voltage output circuit 10, other than diodes 60b and 60c, is the same as that of the reference voltage output circuit 10 in the first embodiment described above. Next, the operation of the reference voltage output circuit 10 of this embodiment will be described with reference to Figure 7.

[0079] First, the current source 20 supplies a main current Ia from the positive electrode 1 to the negative electrode 2 based on the power supply voltage between the positive electrode 1 and the negative electrode 2. Of the main current Ia, a branch current Ib flows from the current source 20 to the negative electrode 2 through the Zener diode 30. Consequently, the Zener diode 30 generates a Zener voltage VZ between the current source 20 and the negative electrode 2 due to the Zener effect. Meanwhile, a branch current Ic flows from the current source 20 to the negative electrode 2 through the transistor 40, resistors 50a and 50b, and diodes 60b and 60c.

[0080] Specifically, a portion of the branch current Ic flows through diode 60b. The remaining current, excluding a portion of the branch current Ic, flows through diode 60c. In other words, current flows from the resistive voltage divider circuit 50 to diodes 60b and 60c, respectively. Consequently, a voltage VB is generated between the input terminal 61x and output terminal 62x of the second semiconductor unit 60X, due to the first PN junction and the second PN junction. In the reference voltage output circuit 10 of Figure 7, the voltage VB1 is the voltage generated between the terminals due to the second PN junction of diode 60b. "Between terminals" refers to the combined distance between the anode and cathode terminals of diode 60b.

[0081] In the reference voltage output circuit 10 of Figure 7, the voltage generated between the terminals due to the second PN junction of diode 60c is denoted as voltage VB2. The term "between the terminals" refers collectively to the anode and cathode terminals of diode 60c. In this embodiment, current flows from the resistive voltage divider circuit 50 to diodes 60b and 60c according to the current-voltage characteristics of the second PN junctions of diodes 60b and 60c, so that voltages VB1 and VB2 become the same voltage (i.e., voltage VB).

[0082] Voltage VB1 has a temperature dependence. This temperature dependence is negative, meaning that as the temperature of diode 60b rises, voltage VB1 decreases, while as the temperature of diode 60b decreases, voltage VB1 increases. Voltage VB2 also has a temperature dependence. This temperature dependence is negative, meaning that as the temperature of diode 60c rises, voltage VB2 decreases, while as the temperature of diode 60c decreases, voltage VB2 increases. Therefore, voltage VB has a negative temperature dependence, meaning that as the temperatures of diodes 60b and 60c rise, voltage VB decreases, while voltage VB increases as the temperatures of diodes 60b and 60c decrease. In other words, voltage VB in this embodiment has the same temperature dependence as voltage VB in the first embodiment described above.

[0083] Voltage VB1 exhibits stress dependence. This stress dependence is positive, meaning that when tensile stress is applied from the resin component 76 to the diode 60b, voltage VB1 increases, while when compressive stress is applied from the resin component 76 to the diode 60b, voltage VB1 decreases. Voltage VB2 exhibits stress dependence. This stress dependence is positive, meaning that when tensile stress is applied from the resin component 76 to the diode 60c, voltage VB2 increases, while when compressive stress is applied from the resin component 76 to the diode 60c, voltage VB2 decreases. Voltage VB exhibits positive stress dependence, meaning that when tensile stress is applied from the resin component 76 to the diodes 60b and 60c, voltage VB increases, while when compressive stress is applied from the resin component 76 to the diodes 60b and 60c, voltage VB decreases. In other words, the voltage VB of this embodiment has the same stress dependence as the voltage VB of the first embodiment described above.

[0084] The resistive voltage divider circuit 50 of this embodiment outputs a reference voltage Vref from the common connection terminal 51, which is obtained by adding a voltage obtained by multiplying the voltage VZ-VA by a first weight and a voltage obtained by multiplying the voltage VB by a second weight, similar to the first embodiment described above. As a result, the temperature dependence of the Zener voltage VZ is canceled out by the temperature dependence of the voltage VA and the temperature dependence of the voltage VB. In addition, the stress dependence of the voltage VA and the stress dependence of the voltage VB are canceled out, and the stress dependence of the Zener voltage VZ is canceled out by the stress dependence of the voltage VA.

[0085] The reference voltage output circuit 10 of this embodiment described above includes diodes 60b and 60c, which replace the transistor 60 of the first embodiment. The diodes 60b and 60c constitute a second semiconductor section 60X connected in parallel between the resistive voltage divider circuit 50 and the negative electrode 2. A voltage VB, which is the average of voltages VB1 and VB2, is generated between the input terminal 61x and output terminal 62x of the second semiconductor section 60X.

[0086] The voltage VA in this embodiment has the same temperature and stress dependence as the voltage VA in the first embodiment described above. The voltage VB in this embodiment has a negative temperature dependence, where the voltage VB decreases as the temperature of diodes 60b and 60c rises, and increases as the temperature of diodes 60b and 60c decreases. The voltage VB has a stress dependence, where the voltage VB increases when tensile stress is applied from the resin component 76 to diodes 60b and 60c, and decreases when compressive stress is applied from the resin component 76 to diodes 60b and 60c. In this embodiment, as in the above embodiment, the resistive voltage divider circuit 50 outputs a reference voltage Vref from the output unit 52, which is obtained by adding the voltage VZ-VA multiplied by a first weight and the voltage VB multiplied by a second weight.

[0087] Therefore, similar to the first embodiment described above, the temperature dependence of the Zener voltage VZ is canceled out by the temperature dependence of voltage VA and voltage VB. In addition, the stress dependence of voltage VA and voltage VB are canceled out, and the stress dependence of Zener voltage VZ is canceled out by the stress dependence of voltage VA. As a result, a reference voltage output circuit 10 is provided that suppresses changes in the reference voltage caused by temperature changes and changes in the reference voltage caused by stress changes.

[0088] (Fifth embodiment) In the third embodiment described above, an example was described in which a transistor 40 is placed between the current source 20 and the resistive voltage divider circuit 50 in the reference voltage output circuit 10. However, instead, this fifth embodiment, in which diodes 40a and 40b are connected in parallel between the current source 20 and the resistive voltage divider circuit 50 in the reference voltage output circuit 10, will be described with reference to Figure 8. Figure 8 is a circuit diagram showing the circuit configuration of the reference voltage output circuit 10 of this embodiment. In Figure 8, the same reference numerals as in Figure 6 indicate the same components, and their descriptions are omitted.

[0089] As shown in Figure 8, the reference voltage output circuit 10 of this embodiment includes diodes 40a and 40b instead of transistor 40. Diode 40a has an anode terminal as a first input terminal connected to the current source 20 and a cathode terminal as a first output terminal connected to the resistive voltage divider circuit 50. Diode 40b also has an anode terminal as a first input terminal connected to the current source 20 and a cathode terminal as a first output terminal connected to the resistive voltage divider circuit 50. Diodes 40a and 40b are semiconductor elements connected in parallel between the current source 20 and the negative electrode 2. Diodes 40a and 40b constitute the first semiconductor section 40X.

[0090] The anode terminal of diode 40a and the anode terminal of diode 40b are connected in common to form the input terminal 41x of the first semiconductor unit 40X. The cathode terminal of diode 40a and the cathode terminal of diode 40b are connected in common to form the output terminal 42x of the first semiconductor unit 40X. Diode 40a comprises a P-type semiconductor and an N-type semiconductor. The P-type semiconductor is placed between the current source 20 and the resistive voltage divider circuit 50. The anode terminal is connected to the P-type semiconductor. The N-type semiconductor is placed between the P-type semiconductor and the resistive voltage divider circuit 50. The N-type semiconductor is in contact with the P-type semiconductor to form a first PN junction. The cathode terminal is connected to the N-type semiconductor.

[0091] Diode 40b comprises a P-type semiconductor and an N-type semiconductor. The P-type semiconductor is placed between the current source 20 and the resistive voltage divider circuit 50. The anode terminal is connected to the P-type semiconductor. The N-type semiconductor is placed between the P-type semiconductor and the resistive voltage divider circuit 50. The N-type semiconductor contacts the P-type semiconductor to form a first PN junction. The cathode terminal is connected to the N-type semiconductor. The P-type semiconductor of diode 40a and the P-type semiconductor of diode 40b each constitute a first P-type semiconductor. The N-type semiconductor of diode 40a and the N-type semiconductor of diode 40b each constitute a first N-type semiconductor. In this embodiment, the electrical circuit configuration of the reference voltage output circuit 10, other than diodes 40a and 40b, is the same as that of the reference voltage output circuit 10 in the third embodiment described above.

[0092] Next, the operation of the reference voltage output circuit 10 of this embodiment will be described with reference to Figure 8. First, based on the power supply voltage between the positive electrode 1 and the negative electrode 2, a main current Ia flows from the positive electrode 1 to the negative electrode 2 from the current source 20. A branch current Ib flows from the current source 20 to the negative electrode 2 through the Zener diode 30. Consequently, a Zener voltage VZ due to the Zener effect is generated between the current source 20 and the negative electrode 2 in the Zener diode 30. Meanwhile, a branch current Ic flows from the current source 20 to the negative electrode 2 through diodes 40a, 40b, resistors 50a, 50b, diodes 60b, and 60c. Specifically, a portion of the branch current Ic flows through diode 40a. The remaining current, excluding a portion of the branch current Ic, flows through diode 40b.

[0093] Accordingly, a voltage VA is generated between the input terminal 41x and output terminal 42x of the first semiconductor unit 40X, due to the first PN junctions of diodes 40a and 40b, respectively. In the reference voltage output circuit 10 of Figure 8, the voltage generated between the terminals due to the first PN junction of diode 40a is denoted as voltage VA1. "Between terminals" refers to the combined distance between the anode and cathode terminals of diode 40a. In the reference voltage output circuit 10 of Figure 8, the voltage generated between the terminals due to the first PN junction of diode 40b is denoted as voltage VA2. "Between terminals" refers to the combined distance between the anode and cathode terminals of diode 40b. In this embodiment, current flows from the current source 20 to diodes 40a and 40b according to the current-voltage characteristics of the first PN junctions of diodes 40a and 40b, so that voltage VA1 and voltage VA2 become the same voltage (i.e., voltage VA).

[0094] Voltage VA1 has a temperature dependence. This temperature dependence is negative, meaning that as the temperature of diode 40a rises, voltage VA1 decreases, while as the temperature of diode 40a decreases, voltage VA1 increases. Voltage VA2 has a temperature dependence. This temperature dependence is negative, meaning that as the temperature of diode 40b rises, voltage VA2 decreases, while as the temperature of diode 40b decreases, voltage VA2 increases. Voltage VA has a negative temperature dependence, meaning that as the temperatures of diodes 40a and 40b rise, voltage VA decreases, while as the temperatures of diodes 40a and 40b decrease, voltage VA increases. In other words, the voltage VA of this embodiment has the same temperature dependence as the voltage VA of the first embodiment described above. Voltage VA1 has a stress dependence. This stress dependence is positive, meaning that when tensile stress is applied from the resin part 76 to the diode 40a, voltage VA1 increases, while when compressive stress is applied from the resin part 76 to the diode 40a, voltage VA1 decreases. Voltage VA2 has a stress dependence. The stress dependence is positive, meaning that when tensile stress is applied from the resin component 76 to the diode 40b, the voltage VA2 increases, while when compressive stress is applied from the resin component 76 to the diode 40b, the voltage VA2 decreases. The voltage VA has a positive stress dependence, meaning that when tensile stress is applied from the resin component 76 to the diodes 40a and 40b, the voltage VA increases, while when compressive stress is applied from the resin component 76 to the diodes 40a and 40b, the voltage VA decreases. In other words, the voltage VA of this embodiment has the same stress dependence as the voltage VA of the third embodiment described above.

[0095] Similar to the first embodiment described above, the resistive voltage divider circuit 50 outputs a reference voltage Vref from the output unit 52, which is the sum of the voltage VZ-VA multiplied by a first weight and the voltage VB multiplied by a second weight. As a result, the temperature dependence of the Zener voltage VZ is canceled out by the temperature dependence of the voltage VA and the temperature dependence of the voltage VB. In addition, the stress dependence of the voltage VA and the stress dependence of the voltage VB are canceled out, and the stress dependence of the Zener voltage VZ is canceled out by the stress dependence of the voltage VA.

[0096] The reference voltage output circuit 10 of this embodiment described above includes diodes 40a and 40b instead of the transistor 40 of the third embodiment. Diodes 40a and 40b constitute a first semiconductor section 40X connected in parallel between the current source 20 and the resistive voltage divider circuit 50. A voltage VA is generated between the input terminal 41x and output terminal 42x of the first semiconductor section 40X due to the first PN junctions of diodes 40a and 40b. Voltage VA has a negative temperature dependence, decreasing as the temperature of diodes 40a and 40b rises, while increasing as the temperature of diodes 40a and 40b decreases. Voltage VA has a positive stress dependence, increasing when tensile stress is applied to diodes 40a and 40b from the resin component 76, while decreasing when compressive stress is applied to diodes 40a and 40b from the resin component 76. Voltage VA of this embodiment has the same temperature and stress dependence as voltage VA of the third embodiment.

[0097] The resistive voltage divider circuit 50 of this embodiment outputs a reference voltage Vref from the output unit 52, which is the sum of a voltage obtained by multiplying the voltage VZ-VA by a first weight and a voltage obtained by multiplying the voltage VB by a second weight, similar to the third embodiment described above. Therefore, similar to the third embodiment described above, the temperature dependence of the Zener voltage VZ is canceled out by the temperature dependence of the voltage VA and the temperature dependence of the voltage VB. The stress dependence of the voltage VA and the stress dependence of the voltage VB are canceled out, and the stress dependence of the Zener voltage VZ is canceled out by the stress dependence of the voltage VA. As a result, a reference voltage output circuit 10 is provided that suppresses changes in the reference voltage caused by temperature changes and changes in the reference voltage caused by stress changes.

[0098] (Sixth Embodiment) In the third embodiment described above, an example was described in which a transistor 40 is placed between the current source 20 and the resistive voltage divider circuit 50 in the reference voltage output circuit 10. However, instead, the sixth embodiment, in which diodes 40c and 40d are connected in series between the current source 20 and the resistive voltage divider circuit 50 in the reference voltage output circuit 10, will be described with reference to Figure 9. Figure 9 is a circuit diagram showing the circuit configuration of the reference voltage output circuit 10 of this embodiment. In Figure 9, the same reference numerals as in Figure 6 indicate the same components, and their descriptions are omitted. As shown in Figure 9, the reference voltage output circuit 10 of this embodiment includes diodes 40c and 40d instead of the transistor 40.

[0099] Diode 40c has an anode terminal connected to the current source 20 and a cathode terminal connected to the anode terminal of diode 40d. Diode 40d has an anode terminal 41b connected to the cathode terminal of diode 40c and a cathode terminal connected to the resistive voltage divider circuit 50. Diodes 40c and 40d are semiconductor elements connected in series between the current source 20 and the resistive voltage divider circuit 50. Diodes 40c and 40d constitute the first semiconductor section 40Z. The anode terminal of diode 40c constitutes the input terminal 41z of the first semiconductor section 40Z. The cathode terminal of diode 40d constitutes the output terminal 42z of the first semiconductor section 40X.

[0100] Diode 40c comprises a P-type semiconductor and an N-type semiconductor. The P-type semiconductor is placed between the current source 20 and diode 40d. The anode terminal is connected to the P-type semiconductor. The N-type semiconductor is placed between the P-type semiconductor and diode 40d. The N-type semiconductor contacts the P-type semiconductor to form a first PN junction. The cathode terminal is connected to the N-type semiconductor. Diode 40d comprises a P-type semiconductor and an N-type semiconductor. The P-type semiconductor is placed between diode 40c and the resistive voltage divider circuit 50. The anode terminal is connected to the P-type semiconductor. The N-type semiconductor is placed between the P-type semiconductor and the resistive voltage divider circuit 50. Furthermore, the N-type semiconductor contacts the P-type semiconductor to form a first PN junction. The cathode terminal is connected to the N-type semiconductor. In this embodiment, the electrical circuit configuration of the reference voltage output circuit 10, other than diodes 40c and 40d, is the same as that of the reference voltage output circuit 10 in the third embodiment described above.

[0101] Next, the operation of the reference voltage output circuit 10 of this embodiment will be described with reference to Figure 9. First, the current source 20 flows a main current Ia from the positive electrode 1 to the negative electrode 2 based on the power supply voltage between the positive electrode 1 and the negative electrode 2. A branch current Ib flows from the current source 20 to the negative electrode 2 through the Zener diode 30. Consequently, the Zener diode 30 generates a Zener voltage VZ due to the Zener effect between the current source 20 and the negative electrode 2. Meanwhile, a branch current Ic flows from the current source 20 to the negative electrode 2 through diodes 40c and 40d, resistors 50a and 50b, and Zener diode 60a.

[0102] At this time, a voltage VA1a is generated between the anode terminal 41d and cathode terminal 42c of diode 40c due to the first PN junction of diode 40c. A voltage VA2a is generated between the anode terminal 41d and cathode terminal of diode 40d due to the first PN junction of diode 40d. In this embodiment, a voltage VA is generated between the input terminal 41x and output terminal 42x of the first semiconductor unit 40X, which is the sum of voltages VA1a and VA2a.

[0103] Voltage VA1a has a temperature dependence. This temperature dependence is negative, meaning that as the temperature of diode 40c rises, voltage VA1a decreases, while as the temperature of diode 40c decreases, voltage VA1a increases. Voltage VA2a also has a temperature dependence. This temperature dependence is negative, meaning that as the temperature of diode 40d rises, voltage VA2a decreases, while as the temperature of diode 40d decreases, voltage VA2a increases. The temperature dependence of voltage VA is negative, meaning that as the temperatures of diodes 40c and 40d rise, voltage VA decreases, while as the temperatures of diodes 40c and 40d decrease, voltage VA increases. In other words, the voltage VA of this embodiment has the same temperature dependence as the voltage VA of the first embodiment described above.

[0104] Voltage VA1a has stress dependence. This stress dependence is positive, meaning that when tensile stress is applied from the resin component 76 to the diode 40c, voltage VA1a increases, while when compressive stress is applied from the resin component 76 to the diode 40c, voltage VA1a decreases. Voltage VA2a also has stress dependence. This stress dependence is positive, meaning that when tensile stress is applied from the resin component 76 to the diode 40d, voltage VA2a increases, while when compressive stress is applied from the resin component 76 to the diode 40d, voltage VA2a decreases. Voltage VA has positive stress dependence, meaning that when tensile stress is applied from the resin component 76 to the diodes 40c and 40d, voltage VA increases, while when compressive stress is applied from the resin component 76 to the diodes 40c and 40d, voltage VA decreases. In other words, the voltage VA of this embodiment has the same stress dependence as the voltage VA of the first embodiment described above.

[0105] The resistive voltage divider circuit 50 of this embodiment outputs a voltage obtained by adding the voltage VZ-VA multiplied by a first weight and the voltage VB multiplied by a second weight as a reference voltage Vref from the common connection terminal 51, similar to the third embodiment described above. As a result, the temperature dependence of the Zener voltage VZ is canceled out by the temperature dependence of the voltage VA and the temperature dependence of the voltage VB. In addition, the stress dependence of the voltage VA and the stress dependence of the voltage VB are canceled out, and the stress dependence of the Zener voltage VZ is canceled out by the stress dependence of the voltage VA.

[0106] The reference voltage output circuit 10 of this embodiment described above includes diodes 40c and 40d instead of transistor 40. Diode 40c has an anode terminal connected to the current source 20 and a cathode terminal connected to diode 40d. Diode 40d has an anode terminal connected to diode 40c and a cathode terminal connected to the resistive voltage divider circuit 50. Diodes 40c and 40d are connected in series between the current source 20 and the resistive voltage divider circuit 50 to constitute the first semiconductor section 40Z. A voltage VA is generated between the input terminal 41z and the output terminal 42z of the first semiconductor section 40Z, which is the sum of voltages VA1 and VA2.

[0107] The voltage VA has a negative temperature dependence, decreasing as the temperature of diodes 40c and 40d rises, while increasing as the temperature of diodes 40c and 40d decreases. The voltage VA has a positive stress dependence, increasing as tensile stress is applied from the resin component 76 to diodes 40c and 40d, while decreasing as compressive stress is applied from the resin component 76 to diodes 40c and 40d. The voltage VB in this embodiment has the same temperature and stress dependence as the voltage VB in the third embodiment described above. The resistive voltage divider circuit 50 in this embodiment outputs a reference voltage Vref from the output unit 52, which is the sum of the voltage VZ-VA multiplied by a first weight and the voltage VB multiplied by a second weight, similar to the third embodiment described above.

[0108] Therefore, similar to the third embodiment described above, the temperature dependence of the Zener voltage VZ is canceled out by the temperature dependence of voltage VA and the temperature dependence of voltage VB. The stress dependence of voltage VA and the stress dependence of voltage VB are canceled out, and the stress dependence of Zener voltage VZ is canceled out by the stress dependence of voltage VA. As a result, a reference voltage output circuit 10 is provided that suppresses changes in the reference voltage caused by temperature changes and changes in the reference voltage caused by stress changes.

[0109] (Seventh Embodiment) In the fourth embodiment described above, an example was described in which diodes 60b and 60c are connected in parallel between the resistive voltage divider circuit 50 and the negative electrode 2 in the reference voltage output circuit 10. However, instead, this seventh embodiment, in which diodes 60e and 60f are connected in series between the resistive voltage divider circuit 50 and the negative electrode 2 in the reference voltage output circuit 10, will be described with reference to Figure 10.

[0110] Figure 10 is a circuit diagram showing the circuit configuration of the reference voltage output circuit 10 of this embodiment. In Figure 10, the same reference numerals as in Figure 7 indicate the same components, and their descriptions are omitted. As shown in Figure 10, the reference voltage output circuit 10 of this embodiment includes diodes 60e and 60f instead of diodes 60b and 60c. Diodes 60e and 60f are semiconductor elements connected in series between the resistive voltage divider circuit 50 and the negative electrode 2. Diodes 60e and 60f constitute the second semiconductor section 60Z.

[0111] Diode 60e has an anode terminal connected to the resistive voltage divider circuit 50 and a cathode terminal connected to the anode terminal of diode 60f. The anode terminal of diode 60e constitutes the input terminal 61z of the second semiconductor unit 60Z. Diode 60f has an anode terminal connected to the cathode terminal of diode 60e and a cathode terminal connected to the negative electrode 2. The cathode terminal of diode 60f constitutes the output terminal 62z of the second semiconductor unit 60Z.

[0112] As shown in Figure 10, diode 60e comprises a P-type semiconductor and an N-type semiconductor. The P-type semiconductor is placed between the resistive voltage divider circuit 50 and diode 60f. The anode terminal is connected to the P-type semiconductor. The N-type semiconductor is placed between the P-type semiconductor and the negative electrode 2. The N-type semiconductor is in contact with the P-type semiconductor to form a second PN junction. The cathode terminal is connected to the N-type semiconductor. Diode 60f comprises a P-type semiconductor and an N-type semiconductor. The P-type semiconductor is placed between diode 60e and the negative electrode 2. The anode terminal is connected to the P-type semiconductor. The N-type semiconductor is placed between the P-type semiconductor and the negative electrode 2. The N-type semiconductor is in contact with the P-type semiconductor to form a second PN junction. The cathode terminal is connected to the N-type semiconductor. The P-type semiconductor of diode 60f and the P-type semiconductor of diode 60e each constitute a second P-type semiconductor. The N-type semiconductor of diode 60f and the N-type semiconductor of diode 60e each constitute a second N-type semiconductor.

[0113] As shown in Figure 10, the reference voltage output circuit 10 of this embodiment includes a Zener diode 40f instead of a transistor 40. The Zener diode 40f includes an anode terminal 41f as a first input terminal connected to the current source 20 and a cathode terminal 42f as a first output terminal connected to the resistive voltage divider circuit 50. The Zener diode 40f includes a P-type semiconductor and an N-type semiconductor. The P-type semiconductor is a first P-type semiconductor placed between the resistive voltage divider circuit 50 and the negative electrode 2. The anode terminal 41f is connected to the P-type semiconductor. The N-type semiconductor is placed between the P-type semiconductor and the negative electrode 2. The N-type semiconductor is in contact with the P-type semiconductor to form a first PN junction. The N-type semiconductor is a first N-type semiconductor to which the cathode terminal 42f is connected. In the reference voltage output circuit 10 of this embodiment, the electrical circuit configuration other than the Zener diode 40f, diodes 60e and 60f is the same as the reference voltage output circuit 10 of the fourth embodiment described above.

[0114] Next, the operation of the reference voltage output circuit 10 of this embodiment will be described with reference to Figure 10. First, the current source 20 supplies a main current Ia from the positive electrode 1 to the negative electrode 2 based on the power supply voltage between the positive electrode 1 and the negative electrode 2. Consequently, a branch current Ib flows from the current source 20 through the Zener diode 30 to the negative electrode 2. As a result, the Zener diode 30 generates a Zener voltage VZ between the current source 20 and the negative electrode 2 due to the Zener effect. Meanwhile, a branch current Ic flows from the current source 20 through the Zener diode 40f, the resistors 50a and 50b, and the diodes 60e and 60f to the negative electrode 2.

[0115] A voltage VA is generated between the anode terminal 41f and cathode terminal 42f of the Zener diode 40f due to the first PN junction. A voltage VB1a is generated between the anode terminal and cathode terminal of diode 60e due to the second PN junction of diode 60e. A voltage VB2a is generated between the anode terminal and cathode terminal of diode 60f due to the second PN junction of diode 60f. Consequently, a voltage VB, which is the sum of voltages VB1a and VB2a, is generated between the input terminal 61z and output terminal 62z of the second semiconductor unit 60Z.

[0116] The voltage VA has a temperature dependence. This temperature dependence is negative, meaning that the voltage VA decreases as the temperature of the Zener diode 40f rises, while the voltage VA increases as the temperature of the Zener diode 40f decreases. In other words, the voltage VA in this embodiment has the same temperature dependence as the voltage VA in the fourth embodiment described above. The voltage VA also has a stress dependence. This stress dependence is positive, meaning that the voltage VA increases when tensile stress is applied from the resin component 76 to the Zener diode 40f, while the voltage VA decreases when compressive stress is applied from the resin component 76 to the Zener diode 40f. In other words, the voltage VA in this embodiment has the same stress dependence as the voltage VA in the fourth embodiment described above.

[0117] Voltage VB1a has a temperature dependence. This temperature dependence is negative, meaning that as the temperature of diode 60e rises, voltage VB1a decreases, while as the temperature of diode 60e decreases, voltage VB1a increases. Voltage VB2a also has a temperature dependence. This temperature dependence is negative, meaning that as the temperature of diode 60f rises, voltage VB2a decreases, while as the temperature of diode 60f decreases, voltage VB2a increases. Therefore, voltage VB has a negative temperature dependence, meaning that as the temperatures of diodes 60e and 60f rise, voltage VB decreases, while voltage VB increases as the temperatures of diodes 60e and 60f decrease. In other words, voltage VB in this embodiment has the same temperature dependence as voltage VB in the fourth embodiment described above.

[0118] Voltage VB1a has stress dependence. This stress dependence is positive, meaning that when tensile stress is applied from the resin component 76 to the diode 60e, voltage VB1a increases, while when compressive stress is applied from the resin component 76 to the diode 60e, voltage VB1a decreases. Voltage VB2a also has stress dependence. This stress dependence is positive, meaning that when tensile stress is applied from the resin component 76 to the diode 60f, voltage VB2a increases, while when compressive stress is applied from the resin component 76 to the diode 60f, voltage VB2a decreases. Therefore, voltage VB has stress dependence, meaning that when tensile stress is applied from the resin component 76 to the diodes 60e and 60f, voltage VB increases, while when compressive stress is applied from the resin component 76 to the diodes 60e and 60f, voltage VB decreases. In other words, voltage VB in this embodiment has the same stress dependence as voltage VB in the fourth embodiment described above.

[0119] The resistive voltage divider circuit 50 of this embodiment outputs a voltage obtained by adding the voltage obtained by multiplying the voltage VZ-VA by a first weight and the voltage obtained by multiplying the voltage VB by a second weight as a reference voltage Vref from the common connection terminal 51, similar to the fourth embodiment described above. As a result, the temperature dependence of the Zener voltage VZ is canceled out by the temperature dependence of the voltage VA and the temperature dependence of the voltage VB. In addition, the stress dependence of the voltage VA and the stress dependence of the voltage VB are canceled out, and the stress dependence of the Zener voltage VZ is canceled out by the stress dependence of the voltage VA.

[0120] The reference voltage output circuit 10 of this embodiment described above includes a Zener diode 40f instead of the transistor 40. The Zener diode 40f has an anode terminal 41f connected to the current source 20 and a cathode terminal 42f connected to the resistive voltage divider circuit 50. A voltage VA is generated between the anode terminal 41d and the cathode terminal 42f of the Zener diode 40f due to the first PN junction of the Zener diode 40f. The voltage VA has a negative temperature dependence, where the voltage VA decreases as the temperature of the Zener diode 40f rises, and increases as the temperature of the Zener diode 40f decreases. The voltage VA has a positive stress dependence, where the voltage VA increases when tensile stress is applied to the Zener diode 40f from the resin component 76, and decreases when compressive stress is applied to the Zener diode 40f from the resin component 76.

[0121] The reference voltage output circuit 10 includes diodes 60e and 60f, which replace diodes 60b and 60c. Diode 60e has an anode terminal connected to the resistive voltage divider circuit 50 and a cathode terminal connected to the anode terminal of diode 60f. Diode 60f has an anode terminal connected to the cathode terminal of diode 60e and a cathode terminal connected to the negative electrode 2. Diodes 60e and 60f are connected in series between the resistive voltage divider circuit 50 and the negative electrode 2 to form a second semiconductor section 60Z. A voltage VB is generated between the input terminal 61z and the output terminal 62z of the second semiconductor section 60Z, which is the sum of voltages VB1a and VB2a.

[0122] The voltage VB has a negative temperature dependence, decreasing as the temperature of diodes 60e and 60f rises, while increasing as the temperature of diodes 60e and 60f decreases. The voltage VB has a positive stress dependence, increasing as tensile stress is applied to diodes 60e and 60f from the resin component 76, while decreasing as compressive stress is applied to diodes 60e and 60f from the resin component 76. Similar to the fourth embodiment described above, the resistive voltage divider circuit 50 of this embodiment outputs a reference voltage Vref from the output unit 52, which is the sum of a voltage obtained by multiplying the voltage VZ-VA by a first weight and a voltage obtained by multiplying the voltage VB by a second weight.

[0123] Therefore, similar to the fourth embodiment described above, the temperature dependence of the Zener voltage VZ is canceled out by the temperature dependence of voltage VA and the temperature dependence of voltage VB. The stress dependence of voltage VA and the stress dependence of voltage VB are canceled out, and the stress dependence of Zener voltage VZ is canceled out by the stress dependence of voltage VA. As a result, a reference voltage output circuit 10 is provided that suppresses changes in the reference voltage caused by temperature changes and changes in the reference voltage caused by stress changes.

[0124] (Eighth embodiment) In the first embodiment described above, an example was described in which an NPN type transistor was used as the transistor 40 placed between the current source 20 and the resistor voltage divider circuit 50 in the reference voltage output circuit 10. However, instead, the eighth embodiment in which a PNP type transistor 40A is placed between the current source 20 and the resistor voltage divider circuit 50 in the reference voltage output circuit 10 will be described with reference to Figure 11.

[0125] Figure 11 is a circuit diagram showing the circuit configuration of the reference voltage output circuit 10 of this embodiment. In Figure 11, the same reference numerals as in Figure 1 indicate the same components, and their descriptions are omitted. As shown in Figure 11, the reference voltage output circuit 10 of this embodiment includes a transistor 40A as the first semiconductor section, replacing the transistor 40. The transistor 40A comprises a P-type semiconductor placed between the current source 20 and the resistive voltage divider circuit 50, an N-type semiconductor placed between the P-type semiconductor and the resistive voltage divider circuit 50, and a P-type semiconductor placed between the N-type semiconductor and the resistive voltage divider circuit 50.

[0126] For the sake of clarity in this explanation, the two P-type semiconductors constituting transistor 40A will be described as follows to distinguish them: The P-type semiconductor located between the current source 20 and the N-type semiconductor will be referred to as the positive P-type semiconductor, and the P-type semiconductor located between the N-type semiconductor and the resistive voltage divider circuit 50 will be referred to as the negative P-type semiconductor. The emitter terminal 41g is connected to the positive P-type semiconductor. The base terminal 43g is connected to the N-type semiconductor. The positive P-type semiconductor is the first P-type semiconductor that contacts the N-type semiconductor to form the first PN junction. The collector terminal 42g is connected to the negative P-type semiconductor. Note that the configuration of the reference voltage output circuit 10 in this embodiment, excluding the transistor 40A, is the same as that of the reference voltage output circuit 10 in this embodiment. Next, the operation of the reference voltage output circuit 10 of this embodiment will be described with reference to Figures 1, 2, and 3.

[0127] First, the current source 20 supplies a main current Ia from the positive electrode 1 to the negative electrode 2 based on the power supply voltage between the positive electrode 1 and the negative electrode 2. A portion of the main current Ia, the branch current Ib, flows from the current source 20 to the negative electrode 2 through the Zener diode 30. Consequently, the Zener diode 30 generates a Zener voltage VZ between the current source 20 and the negative electrode 2 due to the Zener effect. Meanwhile, the branch current Ic, which is the main current Ia other than the branch current Ib, flows from the current source 20 to the negative electrode 2 through transistors 40A and 60 and resistors 50a and 50b.

[0128] The branch current Ic flows from the emitter terminal 41g of transistor 40A through the first PN junction to the N-type semiconductor. A portion of the branch current Ic, the base current, flows from the N-type semiconductor to the base terminal 43g, bypassing the negative P-type semiconductor and flowing to the collector terminal 42g. As a result, transistor 40A turns on. Consequently, in transistor 40A, the remaining current of the branch current Ic, excluding the base current, flows through the N-type semiconductor and the negative P-type semiconductor to the collector terminal 42g. Therefore, the branch current Ic flows from the collector terminal 41 through the first PN junction to the emitter terminal 42. Consequently, a voltage VA caused by the first PN junction is generated between the collector terminal (i.e., the first input terminal) 41 and the emitter terminal 42 (i.e., the second output terminal).

[0129] Furthermore, the branch current Ic flows through the transistor 60, similar to the first embodiment described above. Therefore, the branch current Ic flows from the emitter terminal 61 through the second P-type semiconductor and the collector terminal 62 to the negative electrode 2. As a result, a voltage VB, which is a second voltage caused by the second PN junction, is generated between the emitter terminal 61 and the collector terminal 62. Furthermore, as shown in equation 1 above, the resistive voltage divider circuit 50 outputs a voltage Vref as the reference voltage Vref from the common connection terminal 51, which is the sum of the voltage obtained by multiplying the voltage VZ-VA (a voltage stepped down by VA from the Zener voltage VZ) by a first weight and the voltage obtained by multiplying the voltage VB by a second weight.

[0130] The Zener voltage VZ has the same temperature dependence as in the first embodiment. The voltage VA has the same temperature dependence as in the first embodiment. Therefore, the voltage VZ-VA has a positive temperature dependence. The voltage VB has the same temperature dependence as in the first embodiment. The Zener voltage VZ has the same stress dependence as in the first embodiment. The voltage VA has the same stress dependence as in the first embodiment. The voltage VB has the same stress dependence as in the first embodiment. The stress coefficient of the reference voltage Vref can be expressed by the stress coefficient of the Zener voltage VZ, the stress coefficient of the voltage VA, and the stress coefficient of the voltage VB, as shown in equation 2 above.

[0131] Furthermore, in this embodiment, the resistive voltage divider circuit 50 uses a reference voltage Vref obtained by adding the voltage obtained by multiplying the voltage VZ-VA by a first weight and the voltage obtained by multiplying the voltage VB by a second weight, as described above. This cancels out the stress dependence of voltage VA and the stress dependence of voltage VB. In this embodiment, by using a PNP type transistor as transistor 40A, the stress coefficient of voltage VA in this embodiment is smaller than that of voltage VA in the first embodiment.

[0132] According to the embodiment described above, the reference voltage output circuit 10 comprises a current source 20, a Zener diode 30, transistors 40A and 60, and a resistive voltage divider circuit 50. Transistors 40A and 60 are PNP type transistors, respectively. The resistive voltage divider circuit 50 outputs a voltage obtained by adding a voltage obtained by multiplying the voltage VZ-VA by a first weight and a voltage obtained by multiplying the voltage VB by a second weight, as the reference voltage Vref. As a result, the temperature dependence of the Zener voltage VZ is canceled out by the temperature dependence of the voltage VA and the voltage VB. In addition, the stress dependence of the voltage VA and the stress dependence of the voltage VB are canceled out. Therefore, the reference voltage output circuit 10 can suppress changes in the reference voltage Vref caused by stress changes compared to the reference voltage output circuit 10A in Figure 3. Thus, it is possible to provide a reference voltage output circuit 10 that suppresses changes in the reference voltage Vref caused by stress changes while suppressing changes in the reference voltage Vref caused by temperature changes. (Other embodiments)

[0133] (1) In the first embodiment described above, an example was given in which the first semiconductor part is composed of one transistor 40. However, the first semiconductor part may be composed of two or more transistors 40. Similarly, the second semiconductor part is not limited to the case in which it is composed of one transistor 60, but may also be composed of two or more transistors 60. (2) In the second embodiment described above, an example was given in which a resistive voltage divider circuit 50 was constructed using six resistive elements 50a to 50f. However, if three or more resistive elements are used instead, the number of resistive elements that constitute the resistive voltage divider circuit 50 is not limited to six.

[0134] (3) In the third embodiment described above, an example was described in which the second semiconductor part is composed of one Zener diode 60a. However, the invention is not limited to this, and the second semiconductor part may be composed of two or more Zener diodes 60a. (4) In the fourth embodiment described above, an example was given in which the second semiconductor section was composed of two diodes 60b and 60c connected in parallel. However, the second semiconductor section may be composed of three or more diodes connected in parallel. Similarly, the second semiconductor section may be composed of a plurality of Zener diodes connected in parallel. Similarly, the second semiconductor section may be composed of a plurality of transistors connected in parallel. Furthermore, the second semiconductor section may be composed of a plurality of semiconductor elements connected in parallel and a plurality of semiconductor elements connected in series. Here, a semiconductor element refers to any of BJT, diode, or Zener diode.

[0135] (5) In the fifth embodiment described above, an example was given in which the first semiconductor part was composed of two diodes 40a and 40b connected in parallel. However, the first semiconductor part may be composed of three or more diodes connected in parallel. Similarly, the first semiconductor part may be composed of a plurality of Zener diodes connected in parallel. Similarly, the first semiconductor part may be composed of a plurality of transistors connected in parallel. Furthermore, the first semiconductor part may be composed of a plurality of semiconductor elements connected in parallel and a plurality of semiconductor elements connected in series. Here, a semiconductor element refers to any of BJT, diode, or Zener diode.

[0136] (6) In the sixth embodiment described above, an example was given in which the first semiconductor part was composed of two diodes 40c and 40d connected in series. However, the first semiconductor part may be composed of three or more diodes connected in series. Similarly, the first semiconductor part may be composed of a plurality of Zener diodes connected in series. Similarly, the first semiconductor part may be composed of a plurality of transistors connected in series.

[0137] (7) In the seventh embodiment described above, an example was given in which the second semiconductor part was composed of two diodes 60e and 60f connected in series. However, the second semiconductor part may be composed of three or more diodes connected in series. Similarly, the second semiconductor part may be composed of a plurality of Zener diodes connected in series. Similarly, the second semiconductor part may be composed of a plurality of transistors connected in series.

[0138] (8) In the first embodiment described above, an example was described in which a Zener voltage is generated between the current source 20 and the negative electrode 2 by a single Zener diode 30 placed between the current source 20 and the negative electrode 2. However, instead, a Zener voltage may be generated between the current source 20 and the negative electrode 2 by placing two or more Zener diodes 30 between the current source 20 and the negative electrode 2. Similarly, in the second to seventh embodiments described above, a Zener voltage may be generated between the current source 20 and the negative electrode 2 by placing two or more Zener diodes 30 between the current source 20 and the negative electrode 2. (9) In the first embodiment described above, an example was given in which a resin component 76 made of an electrically insulating resin material was used. However, the resin component 76 may be made of a ceramic component. Similarly, in the second to seventh embodiments described above, the resin component 76 may be made of a ceramic component. Furthermore, in the first to seventh embodiments described above, the resin component 76 may be made of a material other than resin or ceramic.

[0139] (10) This disclosure is not limited to the embodiments described above, and modifications can be made as appropriate within the scope of the claims. Furthermore, the embodiments described above are not unrelated to each other, and can be combined as appropriate, except in cases where the combination is clearly impossible. In addition, it goes without saying that the elements constituting the embodiments are not necessarily essential, except in cases where they are explicitly stated to be particularly essential or where they are clearly considered essential in principle. Furthermore, in the embodiments described above, when numerical values ​​such as the number, numerical values, quantities, or ranges of the components of the embodiments are mentioned, the embodiments are not limited to those specific numbers, except in cases where they are explicitly stated to be particularly essential or where they are clearly limited to a specific number in principle. Furthermore, in the embodiments described above, when the shapes, positional relationships, etc., of the components are mentioned, the embodiments are not limited to those shapes, positional relationships, etc., except in cases where they are explicitly stated to be particularly essential or where they are clearly limited to a specific shape, positional relationship, etc.

[0140] (Perspective of this disclosure) The above disclosure can be understood from the following perspectives, for example. [First point of view] In a reference voltage output circuit, A current source (20) is positioned between the positive electrode (1) and the negative electrode (2) of a DC power supply, and a main current (Ia), which is a constant DC current, flows from the positive electrode to the negative electrode based on the power supply voltage between the positive electrode and the negative electrode. A Zener diode (30) is placed between the current source and the negative electrode, and generates a Zener voltage between the current source and the negative electrode due to the Zener effect when a first branch current (Ib), which is a part of the main current, flows through it. A first semiconductor section (40, 40X, 40Z, 40f, 40A) comprises: first input terminals (41, 41x, 41z, 41f, 41g) positioned between the current source and the negative electrode; first output terminals (42, 42x, 42z, 42f, 42g) positioned between the first input terminal and the negative electrode; a first P-type semiconductor positioned between the first input terminal and the first output terminal; and a first N-type semiconductor provided between the first P-type semiconductor and the first output terminal, in contact with the first P-type semiconductor to form a first PN junction, wherein a second branch current (Ic), which is the main current excluding the first branch current, flows from the first input terminal through the first PN junction to the first output terminal, thereby generating a first voltage (VA) between the first input terminal and the first output terminal due to the first PN junction. The second semiconductor section (60, 60a, 60X, 60Z) includes a second input terminal (61, 61a, 61x, 61z) positioned between the first semiconductor section and the negative electrode, a second output terminal (62, 62a, 62x, 62z) positioned between the second input terminal and the negative electrode, a second P-type semiconductor positioned between the second input terminal and the second output terminal, and a second N-type semiconductor provided between the second P-type semiconductor and the second output terminal, which contacts the second P-type semiconductor to form a second PN junction, and the second branch current flows from the second input terminal through the second PN junction to the second output terminal, generating a second voltage (VB) between the second input terminal and the second output terminal due to the second PN junction, The device includes a reference voltage generation unit (50) provided between the first semiconductor unit and the second semiconductor unit, which outputs a reference voltage (Vref), The Zener diode, the first semiconductor section, and the second semiconductor section are configured to be covered by a package component (76). The Zener voltage has a temperature dependence such that the Zener voltage changes with the temperature of the Zener diode, the first voltage has a temperature dependence such that the first voltage changes with the temperature of the first semiconductor part and a stress dependence such that the first voltage changes due to the stress applied to the first semiconductor part from the package component, the second voltage has a temperature dependence such that the second voltage changes with the temperature of the second semiconductor part and a stress dependence such that the second voltage changes due to the stress applied to the second semiconductor part from the package component, and when the voltage obtained by dropping the Zener voltage by the amount of the first voltage is taken as the third voltage (VZ-VA), The reference voltage generation unit outputs a reference voltage output circuit as the reference voltage, which is obtained by adding a voltage obtained by multiplying the third voltage by a first weight and a voltage obtained by multiplying the second voltage by a second weight, so as to cancel out the stress dependence of the first voltage and the stress dependence of the second voltage, while canceling out the temperature dependence of the Zener voltage with the temperature dependence of the first voltage and the temperature dependence of the second voltage. [Second perspective] In a reference voltage output circuit, A current source (20) is positioned between the positive electrode (1) and the negative electrode (2) of a DC power supply, and a main current (Ia), which is a constant DC current, flows from the positive electrode to the negative electrode based on the power supply voltage between the positive electrode and the negative electrode. A Zener diode (30) is placed between the current source and the negative electrode, and generates a Zener voltage between the current source and the negative electrode due to the Zener effect when a first branch current (Ib), which is a part of the main current, flows through it. A first semiconductor section (40, 40X, 40Z, 40f, 40A) comprises: first input terminals (41, 41x, 41z, 41f, 41g) positioned between the current source and the negative electrode; first output terminals (42, 42x, 42z, 42f, 42g) positioned between the first input terminal and the negative electrode; a first P-type semiconductor positioned between the first input terminal and the first output terminal; and a first N-type semiconductor provided between the first P-type semiconductor and the first output terminal, in contact with the first P-type semiconductor to form a first PN junction, wherein a second branch current (Ic), which is the main current excluding the first branch current, flows from the first input terminal through the first PN junction to the first output terminal, thereby generating a first voltage (VA) between the first input terminal and the first output terminal due to the first PN junction. The second semiconductor section (60, 60a, 60X, 60Z) includes a second input terminal (61, 61a, 61x, 61z) positioned between the first semiconductor section and the negative electrode, a second output terminal (62, 62a, 62x, 62z) positioned between the second input terminal and the negative electrode, a second P-type semiconductor positioned between the second input terminal and the second output terminal, and a second N-type semiconductor provided between the second P-type semiconductor and the second output terminal, which contacts the second P-type semiconductor to form a second PN junction, and the second branch current flows from the second input terminal through the second PN junction to the second output terminal, generating a second voltage (VB) between the second input terminal and the second output terminal due to the second PN junction, The device includes a reference voltage generation unit (50) provided between the first semiconductor unit and the second semiconductor unit, which outputs a reference voltage (Vref), The Zener diode, the first semiconductor section, and the second semiconductor section are configured to be covered by a package component (76). The Zener voltage has a temperature dependence in which the Zener voltage changes with the temperature change of the Zener diode, and a stress dependence in which the Zener voltage changes due to the stress applied to the Zener diode from the package component, the first voltage has a temperature dependence in which the first voltage changes with the temperature change of the first semiconductor part, and a stress dependence in which the first voltage changes due to the stress applied to the first semiconductor part from the package component, the second voltage has a temperature dependence in which the second voltage changes with the temperature change of the second semiconductor part, and a stress dependence in which the second voltage changes due to the stress applied to the second semiconductor part from the package component, and when the voltage obtained by dropping the Zener voltage by the amount of the first voltage is taken as the third voltage (VZ-VA), The reference voltage generation unit outputs a reference voltage output circuit as the reference voltage, which is obtained by adding a voltage obtained by multiplying the third voltage by a first weight and a voltage obtained by multiplying the second voltage by a second weight, so as to cancel out the temperature dependence of the Zener voltage with the temperature dependence of the first voltage and the temperature dependence of the second voltage, cancel out the stress dependence of the first voltage and the stress dependence of the second voltage, and cancel out the stress dependence of the Zener voltage with the stress dependence of the first voltage. [Third perspective] The first semiconductor component comprises a reference voltage output circuit according to the first or second aspect, wherein the first semiconductor component comprises a semiconductor element which is a bipolar junction transistor, a diode, or a Zener diode. [Fourth perspective] The reference voltage output circuit according to the third aspect, wherein the first semiconductor unit comprises a plurality of semiconductor elements connected in series between the current source and the reference voltage generation unit. [Fifth perspective] The reference voltage output circuit according to the third aspect, wherein the first semiconductor unit comprises a plurality of semiconductor elements connected in parallel between the current source and the reference voltage generation unit. [Sixth perspective] The reference voltage output circuit according to the third aspect, wherein the bipolar junction transistor is diode-connected by connecting its base terminal (43) to its collector terminal (41) which serves as the first input terminal. [Seventh perspective] A reference voltage output circuit according to a third aspect, wherein the first input terminal of the diode is the anode terminal and the first output terminal of the diode is the cathode terminal. [Perspective 8] A reference voltage output circuit according to a third aspect, wherein the first input terminal of the Zener diode is the anode terminal and the first output terminal of the Zener diode is the cathode terminal. [Perspective 9] The reference voltage output circuit according to any one of the first to eighth views, wherein the second semiconductor section comprises a semiconductor element which is a bipolar junction transistor, a diode, or a Zener diode. [Perspective 10] The reference voltage output circuit according to the ninth aspect, wherein the second semiconductor section comprises a plurality of semiconductor elements connected in series between the reference voltage generation section and the negative electrode. [Perspective 11] The reference voltage output circuit according to the ninth aspect, wherein the second semiconductor section comprises a plurality of semiconductor elements connected in parallel between the reference voltage generation section and the negative electrode. [Perspective 12] The reference voltage output circuit according to the ninth aspect, wherein the bipolar junction transistor is diode-connected by connecting its base terminal (63) to its collector terminal (61), which serves as the second input terminal. [Perspective 13] The reference voltage output circuit according to the ninth aspect, wherein the diode's second input terminal is the anode terminal and the diode's second output terminal is the cathode terminal. [Perspective 14] The reference voltage output circuit according to the ninth aspect, wherein the second input terminal of the Zener diode is the anode terminal and the second output terminal of the Zener diode is the cathode terminal. [Perspective 15] The reference voltage generation unit has a plurality of resistive elements (50a, 50b, 50c, 50d, 50e, 50f) connected in series between the first semiconductor unit and the second semiconductor unit. The reference voltage generation unit is a reference voltage output circuit according to any one of the first to fourteenth views, wherein the voltage obtained by dividing the third voltage by the plurality of resistors is the voltage obtained by multiplying the third voltage by the first weight, and the voltage obtained by further dividing the second voltage by the plurality of resistors is the voltage obtained by multiplying the second voltage by the second weight. [Perspective 16] The plurality of resistive elements constitute a plurality of common connection terminals (51a, 51b, 51c, 51d, 51e) to which two adjacent resistive elements are commonly connected. The aforementioned reference voltage generation unit is Output unit (52) that outputs the aforementioned reference voltage and It comprises a plurality of switches (SW1, SW2, SW3, SW4, SW5) for connecting or disconnecting the plurality of common connection terminals and the output unit, A reference voltage output circuit according to any one of the first to fifteen views, wherein a common connection of any one of the plurality of common connection terminals is connected to the output unit by a corresponding switch from the plurality of switches, thereby causing the voltage between any one of the common connection terminals and the negative electrode to be output from the output unit as the reference voltage. [Explanation of Symbols]

[0141] 1. Positive electrode 2 Negative electrodes 10. Reference voltage output circuit 20 Current source 30 Zener diodes 40 transistors 50 Resistive voltage divider circuit 50a Resistor 50b Resistor element 60 transistors

Claims

1. In a reference voltage output circuit, A current source (20) is positioned between the positive electrode (1) and the negative electrode (2) of a DC power supply, and based on the power supply voltage between the positive electrode and the negative electrode, a constant DC current, which is a main current (Ia), flows from the positive electrode to the negative electrode. A Zener diode (30) is placed between the current source and the negative electrode, and generates a Zener voltage between the current source and the negative electrode due to the Zener effect when a first branch current (Ib), which is a part of the main current, flows through it. A first semiconductor unit (40, 40X, 40Z, 40f, 40A) comprises: first input terminals (41, 41x, 41z, 41f, 41g) positioned between the current source and the negative electrode; first output terminals (42, 42x, 42z, 42f, 42g) positioned between the first input terminal and the negative electrode; a first P-type semiconductor positioned between the first input terminal and the first output terminal; and a first N-type semiconductor provided between the first P-type semiconductor and the first output terminal, in contact with the first P-type semiconductor to form a first PN junction, wherein a second branch current (Ic), which is the main current excluding the first branch current, flows from the first input terminal through the first PN junction to the first output terminal, thereby generating a first voltage (VA) between the first input terminal and the first output terminal due to the first PN junction. The second semiconductor section (60, 60a, 60X, 60Z) includes a second input terminal (61, 61a, 61x, 61z) positioned between the first semiconductor section and the negative electrode, a second output terminal (62, 62a, 62x, 62z) positioned between the second input terminal and the negative electrode, a second P-type semiconductor positioned between the second input terminal and the second output terminal, and a second N-type semiconductor provided between the second P-type semiconductor and the second output terminal, which contacts the second P-type semiconductor to form a second PN junction, and the second branch current flows from the second input terminal through the second PN junction to the second output terminal, thereby generating a second voltage (VB) between the second input terminal and the second output terminal due to the second PN junction, The device includes a reference voltage generation unit (50) provided between the first semiconductor unit and the second semiconductor unit, which outputs a reference voltage (Vref), The Zener diode, the first semiconductor section, and the second semiconductor section are configured to be covered by a package component (76). The Zener voltage has a temperature dependence such that the Zener voltage changes with the temperature of the Zener diode, the first voltage has a temperature dependence such that the first voltage changes with the temperature of the first semiconductor part and a stress dependence such that the first voltage changes due to the stress applied to the first semiconductor part from the package component, the second voltage has a temperature dependence such that the second voltage changes with the temperature of the second semiconductor part and a stress dependence such that the second voltage changes due to the stress applied to the second semiconductor part from the package component, and when the voltage obtained by dropping the Zener voltage by the amount of the first voltage is taken as the third voltage (VZ-VA), The reference voltage generation unit outputs a reference voltage output circuit as the reference voltage, which is obtained by adding a voltage obtained by multiplying the third voltage by a first weight and a voltage obtained by multiplying the second voltage by a second weight, so as to cancel out the stress dependence of the first voltage and the stress dependence of the second voltage, while canceling out the temperature dependence of the Zener voltage with the temperature dependence of the first voltage and the temperature dependence of the second voltage.

2. In a reference voltage output circuit, A current source (20) is positioned between the positive electrode (1) and the negative electrode (2) of a DC power supply, and based on the power supply voltage between the positive electrode and the negative electrode, a constant DC current, which is a main current (Ia), flows from the positive electrode to the negative electrode. A Zener diode (30) is placed between the current source and the negative electrode, and generates a Zener voltage between the current source and the negative electrode due to the Zener effect when a first branch current (Ib), which is a part of the main current, flows through it. A first semiconductor unit (40, 40X, 40Z, 40f, 40A) comprises: first input terminals (41, 41x, 41z, 41f, 41g) positioned between the current source and the negative electrode; first output terminals (42, 42x, 42z, 42f, 42g) positioned between the first input terminal and the negative electrode; a first P-type semiconductor positioned between the first input terminal and the first output terminal; and a first N-type semiconductor provided between the first P-type semiconductor and the first output terminal, in contact with the first P-type semiconductor to form a first PN junction, wherein a second branch current (Ic), which is the main current excluding the first branch current, flows from the first input terminal through the first PN junction to the first output terminal, thereby generating a first voltage (VA) between the first input terminal and the first output terminal due to the first PN junction. The second semiconductor section (60, 60a, 60X, 60Z) includes a second input terminal (61, 61a, 61x, 61z) positioned between the first semiconductor section and the negative electrode, a second output terminal (62, 62a, 62x, 62z) positioned between the second input terminal and the negative electrode, a second P-type semiconductor positioned between the second input terminal and the second output terminal, and a second N-type semiconductor provided between the second P-type semiconductor and the second output terminal, which contacts the second P-type semiconductor to form a second PN junction, and the second branch current flows from the second input terminal through the second PN junction to the second output terminal, thereby generating a second voltage (VB) between the second input terminal and the second output terminal due to the second PN junction, The device includes a reference voltage generation unit (50) provided between the first semiconductor unit and the second semiconductor unit, which outputs a reference voltage (Vref), The Zener diode, the first semiconductor section, and the second semiconductor section are configured to be covered by a package component (76). The Zener voltage has a temperature dependence in which the Zener voltage changes with the temperature of the Zener diode, and a stress dependence in which the Zener voltage changes due to the stress applied to the Zener diode from the package component, the first voltage has a temperature dependence in which the first voltage changes with the temperature of the first semiconductor part, and a stress dependence in which the first voltage changes due to the stress applied to the first semiconductor part from the package component, the second voltage has a temperature dependence in which the second voltage changes with the temperature of the second semiconductor part, and a stress dependence in which the second voltage changes due to the stress applied to the second semiconductor part from the package component, and when the voltage obtained by dropping the Zener voltage by the amount of the first voltage is taken as the third voltage (VZ-VA), The reference voltage generation unit outputs a reference voltage output circuit as the reference voltage, which is obtained by adding a voltage obtained by multiplying the third voltage by a first weight and a voltage obtained by multiplying the second voltage by a second weight, so as to cancel out the temperature dependence of the Zener voltage with the temperature dependence of the first voltage and the temperature dependence of the second voltage, cancel out the stress dependence of the first voltage and the stress dependence of the second voltage, and cancel out the stress dependence of the Zener voltage with the stress dependence of the first voltage.

3. The reference voltage output circuit according to claim 1 or 2, wherein the first semiconductor section comprises a semiconductor element which is a bipolar junction transistor, a diode, or a Zener diode.

4. The reference voltage output circuit according to claim 3, wherein the first semiconductor unit comprises a plurality of semiconductor elements connected in series between the current source and the reference voltage generation unit.

5. The reference voltage output circuit according to claim 3, wherein the first semiconductor unit comprises a plurality of semiconductor elements connected in parallel between the current source and the reference voltage generation unit.

6. The reference voltage output circuit according to claim 3, wherein the bipolar junction transistor is diode-connected by connecting its base terminal (43) to its collector terminal (41) which serves as the first input terminal.

7. The reference voltage output circuit according to claim 3, wherein the first input terminal of the diode is the anode terminal and the first output terminal of the diode is the cathode terminal.

8. The reference voltage output circuit according to claim 3, wherein the first input terminal of the Zener diode is the anode terminal and the first output terminal of the Zener diode is the cathode terminal.

9. The reference voltage output circuit according to claim 1 or 2, wherein the second semiconductor section comprises a semiconductor element which is a bipolar junction transistor, a diode, or a Zener diode.

10. The reference voltage output circuit according to claim 9, wherein the second semiconductor section comprises a plurality of semiconductor elements connected in series between the reference voltage generation section and the negative electrode.

11. The reference voltage output circuit according to claim 9, wherein the second semiconductor section comprises a plurality of semiconductor elements connected in parallel between the reference voltage generation section and the negative electrode.

12. The reference voltage output circuit according to claim 9, wherein the bipolar junction transistor is diode-connected by connecting its base terminal (63) to its collector terminal (61) which serves as the second input terminal.

13. The reference voltage output circuit according to claim 9, wherein the diode's second input terminal is the anode terminal and the diode's second output terminal is the cathode terminal.

14. The reference voltage output circuit according to claim 9, wherein the second input terminal of the Zener diode is the anode terminal and the second output terminal of the Zener diode is the cathode terminal.

15. The reference voltage generation unit has a plurality of resistive elements (50a, 50b, 50c, 50d, 50e, 50f) connected in series between the first semiconductor unit and the second semiconductor unit. The reference voltage output circuit according to claim 1 or 2, wherein the reference voltage generation unit obtains a voltage obtained by dividing the third voltage by the plurality of resistors as a voltage obtained by multiplying the third voltage by the first weight, and further obtains a voltage obtained by dividing the second voltage by the plurality of resistors as a voltage obtained by multiplying the second voltage by the second weight.

16. The plurality of resistive elements constitute a plurality of common connection terminals (51a, 51b, 51c, 51d, 51e) to which two adjacent resistive elements are commonly connected. The aforementioned reference voltage generation unit is The output unit (52) that outputs the aforementioned reference voltage and The system includes a plurality of switches (SW1, SW2, SW3, SW4, SW5) for connecting or disconnecting the plurality of common connection terminals and the output unit, A reference voltage output circuit according to claim 1 or 2, wherein a common connection of any one of the plurality of common connection terminals is connected to the output unit by a corresponding switch from the plurality of switches, thereby causing the voltage between any one of the common connection terminals and the negative electrode to be output from the output unit as the reference voltage.

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