Laminated film for temporary fixing and method for manufacturing the same, laminate for temporary fixing, and method for manufacturing a semiconductor device.

Abstract

To provide a temporary fixing laminated film and a method for manufacturing the same, which can form a temporary fixing material layer that exhibits excellent separability between the temporarily fixed semiconductor component and the support component. [Solution] A temporary fixing laminated film 10 is provided, which is used to temporarily fix a semiconductor member and a support member, and to separate the semiconductor member from the support member by irradiating it with light from the support member side. The temporary fixing laminated film 10 comprises a first curable resin layer 14, a metal foil 12, and a second curable resin layer 16 in this order.

Description

Technical Field

[0001] The present disclosure relates to a temporary fixing laminated film, a method for manufacturing the same, a temporary fixing laminate, and a method for manufacturing a semiconductor device.

Background Art

[0002] In the field of semiconductor devices, in recent years, technologies related to packages called System in Package (SIP) in which a plurality of semiconductor elements are laminated have been growing remarkably. In an SIP-type package, since a large number of semiconductor elements are laminated, the semiconductor elements are required to be thinned. In response to this requirement, the semiconductor elements are subjected to processing such as thinning by grinding the back surface of the semiconductor member (for example, a semiconductor wafer) after incorporating an integrated circuit into the semiconductor member, and singulation by dicing the semiconductor wafer. These processing of the semiconductor members are usually performed by temporarily fixing the semiconductor members to a support member with a temporary fixing material layer (see, for example, Patent Documents 1 to 3).

[0003] The processed semiconductor member is firmly fixed to the support member via the temporary fixing material layer. Therefore, in the method for manufacturing a semiconductor device, it is required to be able to separate the processed semiconductor member from the support member while preventing damage to the semiconductor member. Patent Document 1 discloses a method of physically separating the temporary fixing material layer while heating it as a method of separating such a semiconductor member. Further, Patent Documents 2 and 3 disclose methods of separating a semiconductor member by irradiating a laser beam (coherent light) to the temporary fixing material layer.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

[0005] However, the method disclosed in Patent Document 1 has the problem that thermal damage occurs to the semiconductor wafer, resulting in a decrease in yield. On the other hand, the methods disclosed in Patent Documents 2 and 3 have the following problems: (i) the irradiation area of ​​the laser light is small and it is necessary to irradiate the entire semiconductor material many times, (ii) the process becomes complicated because it is necessary to control the focus of the laser light and perform scanning irradiation, and (iii) expensive equipment is required.

[0006] The primary objective of this disclosure is to provide a temporary fixing laminate film capable of forming a temporary fixing material layer that exhibits excellent separability between the temporarily fixed semiconductor component and the support component, and a method for manufacturing the same. [Means for solving the problem]

[0007] Through diligent research, the present inventors discovered that by using a laminated film comprising a metal foil and two curable resin layers sandwiching the metal foil as a temporary fixing material layer, the temporarily fixed semiconductor member and the support member can be separated with lower light irradiation energy, thus completing the present invention.

[0008] One aspect of this disclosure relates to a method for manufacturing a temporary fixing laminated film used to temporarily fix a semiconductor member and a support member. The method for manufacturing the temporary fixing laminated film comprises the steps of providing a first curable resin layer on one side of a metal foil and a second curable resin layer on the other side of the metal foil to obtain a temporary fixing laminated film. The temporary fixing laminated film obtained by such a manufacturing method makes it possible to form a temporary fixing material layer that has excellent separation properties between the temporarily fixed semiconductor member and the support member. The reason why the temporary fixing material layer formed from the temporary fixing laminated film exhibits such effects is not entirely clear, but the inventors believe that it is because the diffusion of heat generated in the metal foil in the temporary fixing material layer to the support member can be suppressed by light irradiation, and the temperature rise of the temporary fixing material layer can be promoted with lower light irradiation energy.

[0009] The metal constituting the metal foil may be at least one selected from the group consisting of silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum, from the viewpoint of high coefficient of thermal expansion, high thermal conductivity, etc.

[0010] Another aspect of this disclosure relates to a temporary fixing laminated film used for temporarily fixing a semiconductor member and a support member. The temporary fixing laminated film comprises, in this order, a first curable resin layer, a metal foil, and a second curable resin layer. The metal constituting the metal foil may be at least one selected from the group consisting of, for example, silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum.

[0011] Another aspect of this disclosure relates to a temporary fixing laminate. The temporary fixing laminate comprises a support member and a temporary fixing material layer provided on the support member. The temporary fixing material layer comprises a first curable resin layer, a metal foil, and a second curable resin layer in that order from the support member. With such a temporary fixing laminate, since the temporary fixing material layer comprises a first curable resin layer, a metal foil, and a second curable resin layer in that order, it becomes possible to separate the temporarily fixed semiconductor member from the support member with lower light irradiation energy. This is thought to be because, similar to the above, the diffusion of heat generated in the metal foil in the temporary fixing material layer to the support member can be suppressed by light irradiation, and the temperature rise of the temporary fixing material layer can be promoted with lower light irradiation energy.

[0012] Another aspect of this disclosure relates to a method for manufacturing a semiconductor device. This method for manufacturing a semiconductor device comprises the steps of: preparing the temporary fixing laminate; temporarily fixing a semiconductor member to a support member via a temporary fixing layer; processing the semiconductor member temporarily fixed to the support member; and irradiating the temporary fixing laminate with light from the support member side to separate the semiconductor member from the support member. With this method for manufacturing a semiconductor device, since the temporary fixing laminate is used, it is possible to separate the temporarily fixed semiconductor member from the support member with lower light irradiation energy.

[0013] The light may be incoherent light. Incoherent light may include at least infrared light.

[0014] The light source may be a xenon lamp. [Effects of the Invention]

[0015] This disclosure provides a temporary fixing laminate film capable of forming a temporary fixing material layer that exhibits excellent separability between a temporarily fixed semiconductor member and a support member, and a method for manufacturing the same. Furthermore, this disclosure provides a temporary fixing laminate comprising such a temporary fixing material layer, and a method for manufacturing a semiconductor device using the temporary fixing laminate. [Brief explanation of the drawing]

[0016] [Figure 1] FIG. 1 is a schematic cross-sectional view showing an embodiment of a temporary fixing laminated film. [Figure 2] FIG. 2 is a schematic cross-sectional view showing an embodiment of a temporary fixing laminate. [Figure 3] FIGS. 3(a) and 3(b) are schematic cross-sectional views showing an embodiment of a method of manufacturing a semiconductor device. [Figure 4] FIGS. 4(a), 4(b) and 4(c) are schematic cross-sectional views showing an embodiment of a method of manufacturing a semiconductor device. [Figure 5] FIGS. 5(a) and 5(b) are schematic cross-sectional views showing an embodiment of a method of manufacturing a semiconductor device.

MODE FOR CARRYING OUT THE INVENTION

[0017] Hereinafter, embodiments of the present disclosure will be described with appropriate reference to the drawings. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the constituent elements (including steps and the like) are not essential unless otherwise specified. The sizes of the constituent elements in each figure are conceptual, and the relative size relationships between the constituent elements are not limited to those shown in each figure.

[0018] The same applies to the numerical values and ranges thereof in this specification, and they do not limit the present disclosure. The numerical range indicated by "~" in this specification indicates a range including the numerical values described before and after "~" as the minimum value and the maximum value, respectively. In the numerical ranges described stepwise in this specification, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerically described range. Also, in the numerical ranges described in this specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.

[0019] In this specification, (meth)acrylic acid means acrylic acid or the corresponding methacrylic acid. The same applies to other similar expressions such as (meth)acrylate and (meth)acryloyl group.

[0020] [Laminated film for temporary fixing] Figure 1 is a schematic cross-sectional view showing one embodiment of a temporary fixing laminated film. The temporary fixing laminated film 10 shown in Figure 1 is used to temporarily fix a semiconductor member and a support member. More specifically, the temporary fixing laminated film 10 is used in the manufacturing of semiconductor devices to form a layer (temporary fixing material layer) for temporarily fixing a semiconductor member to a support member while the semiconductor member is being processed. The temporary fixing laminated film 10 comprises a first curable resin layer 14, a metal foil 12, and a second curable resin layer 16 in this order. In other words, the temporary fixing laminated film 10 comprises a metal foil 12, a first curable resin layer 14 provided on a first surface 12a of the metal foil 12, and a second curable resin layer 16 provided on a second surface 12b, which is the surface opposite to the first surface 12a of the metal foil 12. With such a temporary fixing laminated film, it is possible to form a temporary fixing material layer that has excellent separability between the temporarily fixed semiconductor member and the support member.

[0021] The metal foil 12 may be a metal foil made of a metal that absorbs light and generates heat. The metal foil 12 may be a metal foil made of a metal that absorbs light including infrared light and generates heat. Examples of metals that make up such a metal foil include single metals such as silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum; and alloys such as SUS, nichrome, duralumin, bronze, cupronickel, brass, and steel. The metal that makes up the metal foil 12 may be at least one selected from the group consisting of silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum, from the viewpoint of high coefficient of thermal expansion and high thermal conductivity, and may also be copper. The metal foil may include, for example, a glossy surface and a matte surface that does not have gloss. When the first curable resin layer 14 of the temporary fixing laminated film 10 is attached to the support member to form a temporary fixing material layer, it is preferable that the first surface 12a of the metal foil 12 in the temporary fixing laminated film 10 is a matte surface in order to suppress light reflection during light irradiation.

[0022] The thickness of the metal foil 12 may be, for example, greater than 5 μm, 6 μm or more, or 8 μm or more, from the viewpoint of handling during the manufacture of the temporary fixing laminated film. The thickness of the metal foil 12 may be, for example, 100 μm or less, 80 μm or less, 60 μm or less, 50 μm or less, 40 μm or less, 30 μm or less, or 20 μm or less, from the viewpoint of promoting temperature rise by suppressing heat dissipation.

[0023] The first curable resin layer 14 and the second curable resin layer 16 are layers containing a curable resin component that hardens with heat or light, and may be layers composed of a curable resin component. The curable resin component may be a curable resin component that hardens with heat or light. The components constituting the curable resin component in the first curable resin layer 14 and the components constituting the curable resin component in the second curable resin layer 16 may be the same as or different from each other. From the viewpoint of manufacturing a temporary fixing laminated film, it is preferable that the curable resin component (each component constituting the curable resin component) in the first curable resin layer 14 and the curable resin component (each component constituting the curable resin component) in the second curable resin layer 16 are the same as each other.

[0024] The curable resin component may be, for example, a curable resin component containing a thermoplastic resin and a thermosetting resin.

[0025] The thermoplastic resin may be a resin that is thermoplastic, or a resin that is thermoplastic at least in its uncured state and forms a crosslinked structure after heating. Examples of thermoplastic resins include hydrocarbon resins, polycarbonates, polyphenylene sulfides, polyethersulfones, polyetherimides, polyimides, petroleum resins, and novolac resins. These may be used individually or in combination of two or more. Among these, the thermoplastic resin may be a hydrocarbon resin.

[0026] Hydrocarbon resins are resins whose main skeleton is composed of hydrocarbons. Examples of such hydrocarbon resins include ethylene-propylene copolymer, ethylene-1-butene copolymer, ethylene-propylene-1-butene copolymer elastomer, ethylene-1-hexene copolymer, ethylene-1-octene copolymer, ethylene-styrene copolymer, ethylene-norbornene copolymer, propylene-1-butene copolymer, ethylene-propylene-unconjugated diene copolymer, ethylene-1-butene-unconjugated diene copolymer, ethylene-propylene-1-butene-unconjugated diene copolymer, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene block copolymer (SEBS), and styrene-ethylene-propylene-styrene block copolymer (SEPS). These hydrocarbon resins may be subjected to hydrogenation treatment. Furthermore, these hydrocarbon resins may be carboxylated with maleic anhydride or the like. Of these, the hydrocarbon resin may include a hydrocarbon resin containing monomer units derived from styrene (styrene-based resin), or it may include styrene-ethylene-butylene-styrene block copolymer (SEBS).

[0027] The Tg of the thermoplastic resin may be -100 to 500°C, -50 to 300°C, or -50 to 50°C. When the Tg of the thermoplastic resin is 500°C or lower, it tends to be easier to ensure flexibility when forming a film-like temporary fixing material, and low-temperature adhesion can be improved. When the Tg of the thermoplastic resin is -100°C or higher, it tends to suppress the decrease in handling and peelability due to excessive flexibility when forming a film-like temporary fixing material.

[0028] The Tg of a thermoplastic resin is the intermediate glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of a thermoplastic resin is the intermediate glass transition temperature calculated by measuring the change in heat quantity under conditions of a heating rate of 10°C / min and a measurement temperature of -80 to 80°C, using a method compliant with JIS K 7121.

[0029] The weight-average molecular weight (Mw) of the thermoplastic resin may be between 10,000 and 5 million or between 100,000 and 2 million. A weight-average molecular weight of 10,000 or more tends to facilitate ensuring the heat resistance of the formed temporary fixing layer. A weight-average molecular weight of 5 million or less tends to suppress the reduction in flow and adhesion when forming a film-like temporary fixing layer or resin layer. Note that the weight-average molecular weight is a polystyrene equivalent value obtained using a calibration curve with standard polystyrene by gel permeation chromatography (GPC).

[0030] The thermoplastic resin content may be, for example, 40 to 90 parts by mass per 100 parts by mass of the total amount of curable resin components. The thermoplastic resin content may be, for example, 50 parts by mass or more, or 60 parts by mass or more, and 85 parts by mass or less, or 80 parts by mass or less, per 100 parts by mass of the total amount of curable resin components. When the thermoplastic resin content is within the above range, the thin film formation and flatness of the temporary fixing layer tend to be superior.

[0031] Thermosetting resins refer to resins that harden with heat, and are a concept that does not include the thermoplastic resins (hydrocarbon resins) mentioned above. Examples of thermosetting resins include epoxy resins, acrylic resins, silicone resins, phenolic resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins. These may be used individually or in combination of two or more. Of these, epoxy resins may be used as thermosetting resins because they offer superior heat resistance, workability, and reliability. Thermosetting resins may also be used in combination with thermosetting resin curing agents (epoxy resin curing agents when epoxy resin is used as the thermosetting resin).

[0032] The epoxy resin is not particularly limited as long as it has heat resistance after curing. Examples of epoxy resins include difunctional epoxy resins such as bisphenol A type epoxy, novolac type epoxy resins such as phenol novolac type epoxy resin and cresol novolac type epoxy resin, and alicyclic epoxy resins such as dicyclopentadiene type epoxy resin. The epoxy resin may also be, for example, a polyfunctional epoxy resin, a glycidylamine type epoxy resin, or a heterocyclic epoxy resin. Among these, the epoxy resin may include alicyclic epoxy resins from the viewpoint of heat resistance and weather resistance.

[0033] When epoxy resin is used as the thermosetting resin, the curable resin component may include an epoxy resin curing agent. A commonly used and known curing agent can be used for the epoxy resin curing agent. Examples of epoxy resin curing agents include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, and phenolic resins such as bisphenol A, bisphenol F, bisphenol S, bisphenol novolac resins, bisphenol A novolac resins, cresol novolac resins, and phenol aralkyl resins, which have two or more phenolic hydroxyl groups per molecule.

[0034] The total content of thermosetting resin and thermosetting resin curing agent may be 10 to 60 parts by mass per 100 parts by mass of the total amount of curable resin components. The total content of thermosetting resin and thermosetting resin curing agent may be 15 parts by mass or more, or 20 parts by mass or more, or 50 parts by mass or less, or 40 parts by mass or less, per 100 parts by mass of the total amount of curable resin components. When the total content of thermosetting resin and thermosetting resin curing agent is within the above range, the thin film formation properties, flatness, heat resistance, etc. of the temporary fixing layer tend to be superior.

[0035] The curable resin component may further contain a curing accelerator. Examples of curing accelerators include imidazole derivatives, dicyandiamide derivatives, dicarboxylic acid dihydrazides, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate. These may be used individually or in combination of two or more.

[0036] The content of the curing accelerator may be 0.01 to 5 parts by mass per 100 parts by mass of the total amount of thermosetting resin and thermosetting resin curing agent. When the content of the curing accelerator is within the above range, the curing performance tends to improve and the heat resistance tends to be better.

[0037] The curable resin component may further contain a polymerizable monomer and a polymerization initiator. The polymerizable monomer is not particularly limited as long as it polymerizes by heating or irradiation with ultraviolet light or the like. From the viewpoint of material selectivity and availability, the polymerizable monomer may be a compound having a polymerizable functional group such as an ethylenically unsaturated group. Examples of polymerizable monomers include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinylpyridine, vinyl amide, aryl vinyl, etc. Of these, the polymerizable monomer may be (meth)acrylate. The (meth)acrylate may be monofunctional (1-functional), difunctional, or trifunctional or more, but from the viewpoint of obtaining sufficient curability, it may be a (meth)acrylate with two or more functions.

[0038] Examples of monofunctional (meth)acrylates include (meth)acrylic acid; methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, and decyl (meth)acrylate. (meth)acrylate 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, mono(2-(meth)acryloyloxyethyl) Aliphatic (meth)acrylates such as succinate; benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxy polyethylene glyco Examples include aromatic (meth)acrylates such as methyl(meth)acrylate, nonylphenoxypolyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, and 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate.

[0039] Examples of difunctional (meth)acrylates include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, tetrapropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 1,3-butanediol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, and 2-butyl-2-ethyl-1,3-propanediol Aliphatic (meth)acrylates such as 1,9-nonanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, glycerin di(meth)acrylate, tricyclodecanedimethanol (meth)acrylate, ethoxylated 2-methyl-1,3-propanediol di(meth)acrylate; ethoxylated bisphenol A type di(meth)acrylate, propoxylated bisphenol A type di(meth)acrylate, ethoxy Examples include aromatic (meth)acrylates such as cylated propoxylated bisphenol A type di(meth)acrylate, ethoxylated bisphenol F type di(meth)acrylate, propoxylated bisphenol F type di(meth)acrylate, ethoxylated propoxylated bisphenol F type di(meth)acrylate, ethoxylated fluorene type di(meth)acrylate, propoxylated fluorene type di(meth)acrylate, and ethoxylated propoxylated fluorene type di(meth)acrylate.

[0040] Examples of polyfunctional (meth)acrylates with three or more functions include trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, and ethoxylated propoxylated pentaerythritol tri(meth)acrylate. Examples include aliphatic (meth)acrylates such as pentaerythritol tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, propoxylated pentaerythritol tetra(meth)acrylate, ethoxylated propoxylated pentaerythritol tetra(meth)acrylate, ditrimethylolpropane tetraacrylate, and dipentaerythritol hexa(meth)acrylate; and aromatic epoxy (meth)acrylates such as phenol novolac type epoxy (meth)acrylate and cresol novolac type epoxy (meth)acrylate.

[0041] These (meth)acrylates may be used individually or in combination of two or more. Furthermore, these (meth)acrylates may be used in combination with other polymerizable monomers.

[0042] If the curable resin component further contains polymerizable monomers, the amount of polymerizable monomers may be 10 to 60 parts by mass per 100 parts by mass of the total amount of curable resin components.

[0043] The polymerization initiator is not particularly limited as long as it initiates polymerization by heating or irradiation with ultraviolet light or the like. For example, when a compound having an ethylenically unsaturated group is used as the polymerizable monomer, the polymerization initiator may be a thermal radical polymerization initiator or a photoradical polymerization initiator.

[0044] Examples of thermal radical polymerization initiators include diacyl peroxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide, and benzoyl peroxide; t-butyl peroxypivalate, t-hexyl peroxypivalate, 1,1,3,3-tetramethylbutyl peroxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, t-hexyl peroxy-2-ethylhexanoate, t-butyl peroxy-2-ethylhexanoate, t-butyl peroxyisobutyrate, t-hexyl peroxyisopropyl monocarbonate, and t-butyl peroxyisopropyl monocarbonate. Examples include peroxyesters such as peroxy-3,5,5-trimethylhexanoate, t-butyl peroxylaurylate, t-butyl peroxyisopropyl monocarbonate, t-butyl peroxy-2-ethylhexyl monocarbonate, t-butyl peroxybenzoate, t-hexyl peroxybenzoate, 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, and t-butyl peroxyacetate; and azo compounds such as 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), and 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile).

[0045] Examples of photoradical polymerization initiators include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; α-hydroxyketones such as 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; and phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

[0046] These thermal and photoradical polymerization initiators may be used individually or in combination of two or more.

[0047] If the curable resin component further contains polymerizable monomers and polymerization initiators, the amount of polymerization initiator may be 0.01 to 5 parts by mass per 100 parts by mass of the total amount of polymerizable monomers.

[0048] The curable resin component may further contain other components such as insulating fillers, sensitizers, and antioxidants.

[0049] Insulating fillers may be added to the resin layer to impart low thermal expansion and low hygroscopicity. Examples of insulating fillers include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramics. These insulating fillers may be used individually or in combination of two or more. From the viewpoint of dispersibility with solvents, the insulating fillers may be particles whose surfaces have been treated with a surface treatment agent. The surface treatment agent may be, for example, a silane coupling agent.

[0050] If the curable resin component further contains an insulating filler, the amount of insulating filler may be 5 to 20 parts by mass per 100 parts by mass of the total amount of the curable resin component. When the amount of insulating filler is within the above range, it tends to be possible to further improve heat resistance without hindering light transmission. In addition, when the amount of insulating filler is within the above range, it may also contribute to easy peelability.

[0051] Examples of sensitizers include anthracene, phenanthrene, chrysene, benzopyrene, fluorantene, rubrene, pyrene, xanthon, indanthrene, thioxanthene-9-one, 2-isopropyl-9H-thioxanthene-9-one, 4-isopropyl-9H-thioxanthene-9-one, and 1-chloro-4-propoxythioxanthone.

[0052] If the curable resin component further contains a sensitizer, the sensitizer content may be 0.01 to 10 parts by mass per 100 parts by mass of the total amount of the curable resin component. When the sensitizer content is within the above range, there tends to be little effect on the properties and thin-film properties of the curable resin component.

[0053] Examples of antioxidants include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives (hindered phenol derivatives) such as 4-methoxyphenol and 4-t-butylcatechol, aminooxyl derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate.

[0054] If the curable resin component further contains an antioxidant, the antioxidant content may be 0.1 to 10 parts by mass per 100 parts by mass of the total amount of the curable resin component. When the antioxidant content is within the above range, it tends to suppress the decomposition of the curable resin component and prevent contamination.

[0055] The thickness of the first curable resin layer 14 may be, for example, 200 μm or less, from the viewpoint of light transmittance. The thickness of the first curable resin layer 14 may also be 0.1 to 150 μm or 1 to 100 μm.

[0056] The thickness of the second curable resin layer 16 may be, for example, 200 μm or less, from the viewpoint of stress relaxation. The thickness of the first curable resin layer 14 may be 1 to 150 μm or 10 to 100 μm.

[0057] The thickness of the first curable resin layer 14 and the thickness of the second curable resin layer 16 may be the same or different. The thickness of the first curable resin layer 14 may be, for example, less than the thickness of the second curable resin layer 16. From the viewpoint of manufacturing a temporary fixing laminated film, it is preferable that the thickness of the first curable resin layer 14 and the thickness of the second curable resin layer 16 are the same.

[0058] The thickness of the temporary fixing laminated film 10 (total of the first curable resin layer 14, the metal foil 12, and the second curable resin layer 16) may be 10 μm or more, 30 μm or more, or 50 μm or more from the viewpoint of handling the temporary fixing laminated film, and may be 400 μm or less, 300 μm or less, or 200 μm or less from the viewpoint of easy peeling by light irradiation.

[0059] [Manufacturing method for laminated film for temporary fixing] One embodiment of the method for manufacturing a temporary fixing laminated film 10 includes the step of providing a first curable resin layer 14 on one side of a metal foil 12 and a second curable resin layer 16 on the other side of the metal foil 12 to obtain a temporary fixing laminated film 10. In other words, the method for manufacturing a temporary fixing laminated film 10 includes the step of providing a first curable resin layer 14 on the first side 12a of the metal foil 12 and a second curable resin layer 16 on the second side 12b, which is the side opposite to the first side 12a of the metal foil 12, to obtain a temporary fixing laminated film 10.

[0060] The manufacturing method for the temporary fixing laminated film 10 may include, for example, a step of providing a first curable resin layer 14 on one side (first side 12a) of the metal foil 12 (first step), and a step of providing a second curable resin layer 16 on the other side (second side 12b) of the metal foil 12 (second step). The manufacturing method for the temporary fixing laminated film 10 is not particularly limited in order of the first and second steps, as long as curable resin layers (first curable resin layer 14 and second curable resin layer 16) can be provided on both sides of the metal foil 12.

[0061] In the first step, for example, the curable resin component is first dissolved or dispersed by stirring, mixing, kneading, etc., in a solvent to prepare a varnish of the curable resin component. Then, the varnish of the curable resin component is applied to a support film that has been treated with a release agent using a knife coater, roll coater, applicator, comma coater, die coater, etc., and the solvent is evaporated by heating to form a first curable resin film made of the curable resin component on the support film. At this time, the thickness of the first curable resin film (and furthermore, the first curable resin layer 14) can be adjusted by adjusting the amount of varnish of the curable resin component applied. Next, the first curable resin layer 14 can be provided by attaching the first curable resin film to one side of the metal foil 12.

[0062] The solvent used in the preparation of varnishes for curable resin components is not particularly limited as long as it has the property of uniformly dissolving or dispersing each component. Examples of such solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonate esters such as ethylene carbonate and propylene carbonate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These solvents may be used individually or in combination of two or more. Of these, the solvent may be toluene, xylene, heptane, or cyclohexanone, from the viewpoint of solubility and boiling point. The concentration of solid components in the varnish may be 10 to 80% by mass, based on the total mass of the varnish.

[0063] The stirring, mixing, or kneading during the preparation of varnishes containing curable resin components can be carried out using, for example, a stirrer, a 3-roll mill, a ball mill, a bead mill, a homodisper, or the like.

[0064] Examples of support films include polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; and films of polycarbonate, polyamide, polyimide, polyamide-imide, polyetherimide, polyether sulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, poly(meth)acrylate, polysulfone, and liquid crystal polymers. The thickness of the support film may be, for example, 1 to 250 μm.

[0065] The heating conditions for evaporating the solvent from the curable resin varnish applied to the support film can be appropriately set according to the solvent used. For example, the heating conditions may be 40 to 120°C for 0.1 to 30 minutes.

[0066] Methods for attaching the first curable resin film to one side of the metal foil 12 include, for example, heat pressing, roll lamination, and vacuum lamination. Lamination can be carried out, for example, under temperature conditions of 0 to 120°C.

[0067] The thickness of the first curable resin film may be, for example, 200 μm or less, from the viewpoint of light transmittance. The thickness of the first curable resin film may also be 0.1 to 150 μm or 1 to 100 μm.

[0068] The first curable resin layer 14 can also be formed by directly coating the curable resin component onto one side of the metal foil 12. When using a varnish made of the curable resin component, the layer can also be formed by coating the varnish made of the curable resin component onto one side of the metal foil 12 and volatilizing the solvent by heating.

[0069] In the second step, a second curable resin film is prepared in the same manner as in the first step, and a second curable resin layer 16 can be provided by attaching the second curable resin film to the other side of the metal foil 12. The second curable resin layer 16 can also be formed by directly coating the curable resin component to the other side of the metal foil 12. When using a varnish of the curable resin component, the varnish of the curable resin component can also be applied to the other side of the metal foil 12, and the solvent can be evaporated by heating to form the layer. In this way, a temporary fixing laminated film 10 can be obtained.

[0070] The thickness of the second curable resin film may be, for example, 200 μm or less, from the viewpoint of stress relaxation. The thickness of the second curable resin film may also be 1 to 150 μm or 10 to 100 μm.

[0071] The thickness of the first curable resin film and the thickness of the second curable resin film may be the same or different. The thickness of the first curable resin film may be, for example, less than the thickness of the second curable resin film. From the viewpoint of manufacturing a temporary fixing laminate film, it is preferable that the thickness of the first curable resin film and the thickness of the second curable resin film are the same.

[0072] The manufacturing method for the temporary fixing laminated film 10 may include, for example, the steps of: preparing a laminate by laminating a first curable resin film, a metal foil, and a second curable resin film in that order; and attaching the first curable resin film and the second curable resin film in the laminate to both sides of the metal foil. With such a manufacturing method, the curable resin film attachment process is performed only once, making it possible to manufacture the temporary fixing laminated film 10 more efficiently. The method for attaching the first curable resin film and the second curable resin film to both sides of the metal foil may be the same as in the first step.

[0073] [Laminate for temporary fixing] Figure 2 is a schematic cross-sectional view showing one embodiment of a temporary fixing laminate. The temporary fixing laminate 20 shown in Figure 2 comprises a support member 22 and a temporary fixing material layer 10A provided on the support member 22. The temporary fixing material layer 10A comprises a first curable resin layer 14, a metal foil 12, and a second curable resin layer 16, in this order from the support member 22. That is, the temporary fixing material layer 10A comprises a metal foil 12, a first curable resin layer 14 provided on the first surface 12a of the metal foil 12, and a second curable resin layer 16 provided on the second surface 12b, which is the surface opposite to the first surface 12a of the metal foil 12. The second curable resin layer 16 includes the outermost surface S of the temporary fixing material layer 10A opposite to the support member 22. With this type of temporary fixing laminate 20, since it includes a temporary fixing material layer 10A comprising a first curable resin layer 14, a metal foil 12, and a second curable resin layer 16 in that order, it becomes possible to separate the temporarily fixed semiconductor member from the support member with lower light irradiation energy.

[0074] The metal foil 12 may include, for example, a glossy surface and a matte surface that does not have a glossy finish. In this case, the first surface 12a of the metal foil 12 may be a matte surface because it can suppress light reflection during light irradiation.

[0075] The method for manufacturing the temporary fixing laminate 20 is not particularly limited as long as a laminate having a predetermined configuration can be obtained. The temporary fixing laminate 20 can also be obtained, for example, by a method that includes the step of attaching the temporary fixing laminate film 10 onto a support member 22. In this case, the temporary fixing material layer 10A may be a layer made of the temporary fixing laminate film 10. When attaching the first curable resin layer 14 of the temporary fixing laminate film 10 onto the support member 22, the first surface 12a of the metal foil 12 in the temporary fixing laminate film 10 may be a non-glossy surface.

[0076] The support member 22 is a plate-like body with high transmittance that can withstand the loads applied during the processing of semiconductor components. Examples of the support member 22 include inorganic glass substrates and transparent resin substrates.

[0077] The thickness of the support member 22 may be, for example, 0.1 to 2.0 mm. If the thickness of the support member 22 is 0.1 mm or more, handling tends to be easier. If the thickness of the support member 22 is 2.0 mm or less, material costs tend to be reduced.

[0078] Methods for attaching the temporary fixing laminated film 10 onto the support member 22 include, for example, heat pressing, roll lamination, and vacuum lamination. Lamination can be carried out, for example, under temperature conditions of 0 to 120°C.

[0079] The temporary fixing laminate 20 can also be obtained by methods other than those that include the step of attaching the temporary fixing laminate film 10 on the support member 22. For example, the temporary fixing laminate 20 can also be obtained by a method that includes the steps of preparing a support member 22 and laminating and bonding a first curable resin layer 14, a metal foil 12, and a second curable resin layer 16 on the support member 22; or by a method that includes the steps of preparing a first laminate comprising a support member and a first curable resin layer provided on the support member, and a second laminate comprising a metal foil and a second curable resin layer provided on the metal foil, and bonding the first curable resin layer 14 of the first laminate and the metal foil 12 of the second laminate.

[0080] [Manufacturing method for semiconductor devices] A semiconductor device manufacturing method according to one embodiment comprises the steps of: preparing the above-mentioned temporary fixing laminate (preparation step); temporarily fixing a semiconductor member to a support member via a temporary fixing material layer (temporary fixing step); processing the semiconductor member temporarily fixed to the support member (processing step); and separating the semiconductor member from the support member by irradiating the temporary fixing laminate with light from the support member side (separation step). With this semiconductor device manufacturing method, since the above-mentioned temporary fixing laminate is used, it becomes possible to separate the temporarily fixed semiconductor member from the support member with lower light irradiation energy.

[0081] (preparation process) In the preparation process, the above-mentioned temporary fixing laminate 20 is prepared to temporarily fix the semiconductor components to the support member while the semiconductor components are being processed for the manufacture of a semiconductor device.

[0082] (Temporary fixing process) Figures 3(a) and 3(b) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. In the temporary fixing step, the semiconductor member 40 is temporarily fixed to the support member 22 via a temporary fixing material layer 10A. The outermost surface S of the temporary fixing material layer 10A on the side to which the semiconductor member is temporarily fixed is the surface of the second curable resin layer 16. For example, the semiconductor member 40 can be temporarily fixed to the support member 22 by curing the second curable resin layer 16 (and the first curable resin layer 14) with the semiconductor member 40 placed on the second curable resin layer 16 (see Figure 3(a)) (see Figure 3(b)). In other words, the semiconductor member 40 can be temporarily bonded to the support member 22 via the temporary fixing material layer 10Ac having a cured second curable resin layer 16c (and a cured first curable resin layer 14c). In this way, a temporary fixing laminate 20c is formed.

[0083] The semiconductor component 40 may have a semiconductor substrate 42 and a redistribution layer 44. If the semiconductor component 40 has a semiconductor substrate 42 and a redistribution layer 44, the semiconductor component 40 is temporarily fixed to the support member 22 via a temporary fixing material layer 10A with the redistribution layer facing the second curable resin layer 16. The semiconductor component 40 may further have external connection terminals. The semiconductor substrate 42 may be a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. In the example of Figure 3(a), multiple semiconductor components 40 are arranged on the second curable resin layer 16, but the number of semiconductor components 40 may be one. The thickness of the semiconductor component 40 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm, in order to miniaturize and thin the semiconductor device, as well as to suppress cracking during transport, processing, etc.

[0084] The semiconductor member 40, placed on the second curable resin layer 16, is pressed against the second curable resin layer 16, for example, using a vacuum press or a vacuum laminator. When using a vacuum press, the pressing conditions may be an atmospheric pressure of 1 hPa or less, a pressing pressure of 1 MPa, a pressing temperature of 120 to 200°C, and a holding time of 100 to 300 seconds. When using a vacuum laminator, the pressing conditions may be, for example, an atmospheric pressure of 1 hPa or less, a pressing temperature of 60 to 180°C or 80 to 150°C, a laminating pressure of 0.01 to 1.0 MPa or 0.1 to 0.7 MPa, and a holding time of 1 to 600 seconds or 30 to 300 seconds.

[0085] After the semiconductor member 40 is placed on the second curable resin layer 16, the semiconductor member 40 is temporarily fixed to the support member 22 via a temporary fixing material layer 10Ac having a cured second curable resin layer 16c (and a cured first curable resin layer 14c) by thermal curing or photocuring the second curable resin layer 16 (and the first curable resin layer 14). The thermal curing conditions may be, for example, 300°C or less or 100 to 250°C for 1 to 180 minutes or 1 to 120 minutes.

[0086] (Processing process) Figures 4(a), 4(b), and 4(c) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. In the processing step, a semiconductor component 40, which is temporarily fixed to a support member 22, is processed. Figure 4(a) shows an example of processing including thinning of a semiconductor substrate. Processing of the semiconductor component is not limited to this and may include, for example, thinning of the semiconductor substrate, dicing of the semiconductor component, formation of through electrodes, etching, reflow plating, sputtering, or a combination thereof.

[0087] After processing the semiconductor component 40, a sealing layer 50 is formed to seal the processed semiconductor component 40, as shown in Figure 4(b). The sealing layer 50 can be formed using a sealing material commonly used for the manufacture of semiconductor devices. For example, the sealing layer 50 may be formed using a thermosetting resin composition. Examples of thermosetting resin compositions used for the sealing layer 50 include epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin. The sealing layer 50 and the thermosetting resin composition for forming the sealing layer 50 may contain additives such as fillers and / or flame retardants.

[0088] The sealing layer 50 is formed using, for example, a solid material, a liquid material, a fine-grained material, or a sealing film. When a sealing film is used, a compression sealing molding machine, a vacuum laminating device, etc., are used. For example, the sealing layer 50 can be formed by covering the semiconductor member 40 with a sealing film that has been heat-melted using these devices at a temperature of 40 to 180°C (or 60 to 150°C), a pressure of 0.1 to 10 MPa (or 0.5 to 8 MPa), and for 0.5 to 10 minutes. The thickness of the sealing film is adjusted so that the sealing layer 50 is greater than or equal to the thickness of the semiconductor member 40 after processing. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

[0089] After forming the sealing layer 50, the sealing layer 50 and the cured second curable resin layer 16c may be divided into multiple parts, each containing one semiconductor member 40, as shown in Figure 4(c).

[0090] (separation process) Figures 5(a) and 5(b) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. In the separation step, light is irradiated onto the temporary fixing laminate from the support member side, and the semiconductor member is separated from the support member.

[0091] As shown in Figure 5(a), the semiconductor member 40 is separated from the support member 22 by irradiating the temporary fixing laminate 20c with light A from the support member 22 side. Upon irradiation with light A, the metal foil 12 absorbs the light and instantaneously generates heat. This generated heat can cause, for example, melting of the hardened first curable resin layer 14c and / or the hardened second curable resin layer 16c, thermal stress between the support member 22 and the semiconductor member 40, and scattering of the metal foil 12. One or more of these phenomena are the main causes of cohesive delamination, interfacial delamination, etc., which can easily separate the semiconductor member 40 from the support member 22. In order to separate the semiconductor member 40 from the support member 22, a small amount of stress may be applied to the semiconductor member 40 along with the irradiation with light A.

[0092] Light A in the separation process may be coherent light. Coherent light is an electromagnetic wave that has properties such as high coherence, high directivity, and high monochromaticity. Coherent light tends to have high intensity because light of the same wavelength and phase reinforces and combines with each other. Laser light is generally coherent light. Examples of laser light include YAG lasers, fiber lasers, semiconductor lasers, helium-neon lasers, argon lasers, and excimer lasers. The wavelength of the laser light may be 1300 nm or less. By having a wavelength of 1300 nm or less, the light absorption of the support member 22 is suppressed and the light absorption of the metal foil 12 is increased, making it possible to peel off with lower light irradiation energy. Coherent light may also be pulsed light.

[0093] Light A in the separation process may be incoherent light. Incoherent light is non-coherent light, and is an electromagnetic wave that has properties such as not generating interference fringes, low coherence, and low directivity. Incoherent light tends to attenuate as the optical path length increases. Light such as sunlight and fluorescent light is incoherent light. Incoherent light can also be defined as light excluding laser light. The irradiation area of ​​incoherent light is generally overwhelmingly larger than that of coherent light (i.e., laser light), so it is possible to reduce the number of irradiations. For example, separation of multiple semiconductor components 40 can be achieved with a single irradiation. Incoherent light may include infrared light. Incoherent light may also be pulsed light.

[0094] The light source is not particularly limited, but it may be a xenon lamp. A xenon lamp is a lamp that utilizes light emission by applying and discharging a discharge in a discharge tube filled with xenon gas. Because a xenon lamp discharges while repeatedly ionizing and exciting, it stably has a continuous wavelength range from the ultraviolet to the infrared region. Compared to lamps such as metal halide lamps, xenon lamps have a shorter start-up time, so the time required for the process can be greatly reduced. In addition, although high heat is instantaneously generated because a high voltage is applied for light emission, xenon lamps are advantageous because the cooling time is short and continuous operation is possible.

[0095] The irradiation conditions for the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (distance between the light source and the temporary fixing material layer), and irradiation energy, and these can be arbitrarily set according to the number of irradiations, etc. From the viewpoint of reducing damage to the semiconductor member 40, irradiation conditions that can separate the semiconductor member 40 in a single irradiation may be set.

[0096] A portion of the cured second curable resin layer 16c may adhere to the separated semiconductor member 40 as a residue. The adhered residue is removed as shown in Figure 5(b). The adhered residue may be removed, for example, by washing with a solvent or by peeling. The solvent is not particularly limited, but examples include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, hexane, etc. These may be used individually or in combination of two or more. To remove the adhered residue, the semiconductor member 40 may be immersed in the solvent or ultrasonic cleaning may be performed. The semiconductor member 40 may also be heated at a low temperature of about 100°C or below.

[0097] By the methods illustrated above, a semiconductor element 60 comprising the processed semiconductor member 40 can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor element or a substrate for mounting semiconductor elements. [Examples]

[0098] The present disclosure will be described in more detail below with reference to examples. However, the present disclosure is not limited to these examples.

[0099] (Example 1) [Preparation of test laminates] <Preparation of curable resin film> As a thermoplastic resin, maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1901GT, Kraton Polymer Japan Co., Ltd.) was dissolved in toluene to prepare a thermoplastic resin solution with a concentration of 25% by mass. As a thermosetting resin, dicyclopentadiene-type epoxy resin (product name: HP-7200H, DIC Corporation) was dissolved in toluene to prepare a thermosetting resin solution with a concentration of 25% by mass. An antioxidant (hindered phenol derivative, product name: AO-60, ADEKA Corporation) was dissolved in toluene to prepare an antioxidant solution with a concentration of 10% by mass. A curing accelerator (imidazole derivative, product name: 2PZ-CN, Shikoku Chemicals, Inc.) was dissolved in cyclohexanone solvent to prepare a curing accelerator solution with a concentration of 10% by mass. Next, a thermoplastic resin solution containing 70 parts by mass of the copolymer, a thermosetting resin solution containing 30 parts by mass of the epoxy resin, an antioxidant solution containing 0.8 parts by mass of the antioxidant, and a curing accelerator solution containing 2 parts by mass of the curing accelerator were mixed to obtain a varnish of the curable resin component.

[0100] The resulting curable resin component varnish was applied to the release surface of a polyethylene terephthalate (PET) film (Purex A31, Teijin DuPont Films Ltd., thickness: 38 μm) using a precision coating machine. The coating was dried by heating at 100°C for 10 minutes to produce a curable resin film with a thickness of approximately 80 μm. This curable resin film was used to form the curable resin layers (first curable resin layer and second curable resin layer).

[0101] <Preparation of laminated film for temporary fixing> A curable resin film was placed on both sides of a 12 μm thick electrolytic copper foil (product name: F3-WS-12, Furukawa Electric Co., Ltd.) having a roughened surface. At this time, the electrolytic copper foil and the curable resin film were positioned so that the sides opposite to the PET film were in contact. Next, a temporary fixing laminate film was obtained by laminating using a vacuum pressure laminator (V130, Nikko Materials Co., Ltd.) under the conditions of a pressure of 0.5 MPa, a temperature of 100 °C, and a pressurizing time of 60 seconds.

[0102] <Preparation of a laminate for temporary fixation> A rectangular glass slide measuring 20 mm x 20 mm (thickness: 1.1 mm) was prepared as a support member. A temporary fixing laminate film cut to a size of 20 mm x 20 mm was placed on the prepared glass slide so that the roughened copper foil side (non-glossy side) faced the glass. Then, using a vacuum pressure laminator (V130, Nikko Materials Co., Ltd.), a temporary fixing laminate was obtained by laminating under the conditions of a pressure of 0.5 MPa, a temperature of 100 °C, and a pressurizing time of 60 seconds, thereby obtaining a support member / temporary fixing layer structure (support member / first curable resin layer / metal foil / second curable resin layer).

[0103] <Preparation of test laminates> A semiconductor chip (size: 20 mm x 20 mm, thickness: 150 μm) was placed on the second curable resin layer of the temporary fixing material layer of the temporary fixing laminate. Then, lamination was performed using a vacuum pressure laminator (V130, Nikko Materials Co., Ltd.) under the conditions of a pressure of 0.5 MPa, a temperature of 100 °C, and a pressurizing time of 60 seconds. The first and second curable resin layers of the temporary fixing material layer were cured by heating at 200 °C for 1 hour to obtain a test laminate of Example 1 having a semiconductor component temporarily fixed to a support member.

[0104] (Comparative Example 1) [Preparation of test laminates] <Fabrication of support members with metal layers> A rectangular glass slide measuring 20 mm x 20 mm (thickness: 1.1 mm) was prepared as a support member. A copper layer (thickness: 200 nm) was formed on the prepared glass slide by sputtering. In the sputtering process, the copper layer was formed by RF sputtering after pretreatment by reverse sputtering. The conditions for reverse sputtering (pretreatment) and RF sputtering are as follows. (1) Reverse sputtering (pretreatment) ·Ar flow rate: 1.2×10 -2 Pa·m 3 / s(70sccm) ·RF power: 300W • Duration: 300 seconds (2) RF sputtering ·Ar flow rate: 1.2×10 -2 Pa·m 3 / s(70sccm) ·RF power: 2000W

[0105] <Preparation of temporary fixing laminates and preparation of test laminates> A 20mm x 20mm piece of the curable resin film was placed on a copper layer formed by sputtering a glass slide. Then, using a vacuum pressure laminator (V130, Nikko Materials Co., Ltd.), the layers were laminated under the conditions of a pressure of 0.5 MPa, a temperature of 100°C, and a pressurizing time of 60 seconds to obtain a temporary fixing laminate having the structure of a support member / metal layer (copper layer) / curable resin layer. Next, a semiconductor chip (size: 20mm x 20mm, thickness: 150μm) was placed on the curable resin layer, and the curable resin layer was cured under the same conditions as in Example 1 to obtain a test laminate of Comparative Example 1 having a semiconductor member temporarily fixed to the support member.

[0106] <Peelability Test> For the test laminates of Example 1 and Comparative Example 1, the test laminates were irradiated with a xenon lamp under two irradiation conditions: a weak irradiation condition with an applied voltage of 640V, an irradiation distance of 5mm, one irradiation, and an irradiation time of 1000μs, and a strong irradiation condition with an applied voltage of 670V, an irradiation distance of 5mm, one irradiation, and an irradiation time of 1000μs. The separation between the temporarily fixed semiconductor chip and the slide glass was evaluated. The xenon lamp used was a NovaCentrix PulseForge® 1300 (wavelength range: 200nm~1500nm, irradiation energy per unit area: 8.4J / cm²). 2 (Predicted value, low irradiation conditions), 9.6 J / cm 2Using (predicted values, strong irradiation conditions), xenon lamp irradiation was performed from the side of the laminate's support member (slide glass). The irradiation distance was the distance between the light source and the stage on which the slide glass was placed. In the peelability test, if the semiconductor chip peeled off from the slide glass spontaneously without applying external force after xenon lamp irradiation, it was evaluated as "A," and if the semiconductor chip did not peel off from the slide glass without applying external force, it was evaluated as "B." Note that the test laminate of Example 1 was evaluated as "A" under weak irradiation conditions, so testing under strong irradiation conditions was not performed. The results are shown in Table 1.

[0107] [Table 1]

[0108] As shown in Table 1, the test laminate of Example 1, which had a temporary fixing layer with a specific configuration (first curable resin layer / metal foil / second curable resin layer), exhibited superior peelability (separability between the temporarily fixed semiconductor chip and the slide glass) even under weaker irradiation conditions (lower light irradiation energy) compared to the test laminate of Comparative Example 1, which did not have a temporary fixing layer with a specific configuration. These results confirm that the temporary fixing laminate film of this disclosure can form a temporary fixing layer that exhibits excellent separability between the temporarily fixed semiconductor component and the support component (separation is possible with lower light irradiation energy). [Explanation of Symbols]

[0109] 10... Laminated film for temporary fixing, 10A, 10Ac... Temporary fixing material layer, 12... Metal foil, 12a... First surface, 12b... Second surface, 14... First curable resin layer, 14c... Cured first curable resin layer, 16... Second curable resin layer, 16c... Cured second curable resin layer, 20, 20c... Laminate for temporary fixing, 22... Support member, 40... Semiconductor member, 42... Semiconductor substrate, 44... Redistribution layer, 50... Encapsulation layer, 60... Semiconductor element.

Claims

1. A temporary fixing laminated film used to temporarily fix a semiconductor member and a support member, and to separate the semiconductor member from the support member by irradiating it with light from the support member side, A temporary fixing laminated film comprising a first curable resin layer, a metal foil, and a second curable resin layer in that order.

2. The temporary fixing laminated film according to claim 1, wherein the metal constituting the metal foil is at least one selected from the group consisting of silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum.

3. The temporary fixing laminated film according to claim 1 or 2, wherein the light is incoherent light.

4. The temporary fixing laminated film according to claim 3, wherein the incoherent light is light that includes at least infrared light.

5. The temporary fixing laminated film according to any one of claims 1 to 4, wherein the light source is a xenon lamp.

6. A method for manufacturing a temporary fixing laminated film used to temporarily fix a semiconductor member and a support member, and to separate the semiconductor member from the support member by irradiating it with light from the support member side, A manufacturing method comprising the step of providing a first curable resin layer on one side of a metal foil and a second curable resin layer on the other side of the metal foil to obtain a laminated film for temporary fixing.

7. The manufacturing method according to claim 6, wherein the metal constituting the metal foil is at least one selected from the group consisting of silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum.

8. The manufacturing method according to claim 6 or 7, wherein the light is incoherent light.

9. The manufacturing method according to claim 8, wherein the incoherent light is light that includes at least infrared light.

10. The manufacturing method according to any one of claims 6 to 9, wherein the light source is a xenon lamp.

11. A temporary fixing laminate used to temporarily fix a semiconductor member and a support member, and to separate the semiconductor member from the support member by irradiating it with light from the support member side, The temporary fixing laminate comprises the support member and a temporary fixing material layer provided on the support member. The temporary fixing laminate comprises a first curable resin layer, a metal foil, and a second curable resin layer in that order from the support member.

12. A step of preparing a temporary fixing laminate comprising a support member and a temporary fixing material layer provided on the support member, wherein the temporary fixing material layer comprises a first curable resin layer, a metal foil, and a second curable resin layer in that order from the support member, A step of temporarily fixing the semiconductor member to the support member via the temporary fixing material layer, A step of processing the semiconductor member that has been temporarily fixed to the support member, A step of irradiating the temporary fixing laminate with light from the support member side to separate the semiconductor member from the support member, A method for manufacturing a semiconductor device, comprising:

13. The method for manufacturing a semiconductor device according to claim 12, wherein the metal constituting the metal foil is at least one selected from the group consisting of silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum.

14. The manufacturing method according to claim 12 or 13, wherein the light is incoherent light.

15. The manufacturing method according to claim 14, wherein the incoherent light is light that includes at least infrared light.

16. The manufacturing method according to any one of claims 12 to 15, wherein the light source is a xenon lamp.

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