Method for manufacturing a semiconductor device, and film-like adhesive

Abstract

The present invention discloses a method for producing a semiconductor device, wherein a circuit member with an adhesive is prepared by a process in which a multilayer body that comprises a semiconductor chip or a semiconductor wafer and a film adhesive is pressurized for 30 seconds to 10 minutes, while being heated at 60°C to 100°C, thereby being bonded to a main surface. If the film adhesive is subjected to a heat treatment at 80°C for 5 minutes, the melt viscosity of the film adhesive at 80°C is from 4,000 Pa·s to 10,000 Pa·s before the heat treatment, while the melt viscosity of the film adhesive at 80°C is 11,000 Pa·s or less after the heat treatment.

Description

[Technical Field]

[0001] This disclosure relates to a method for manufacturing a semiconductor device and a film-like adhesive. [Background technology]

[0002] In some cases, a flip-chip connection method (FC connection method) is used, in which conductive protrusions called bumps are formed on the semiconductor chip or wiring circuit board to directly connect the semiconductor chip and the wiring circuit board. For example, in the connection between a semiconductor chip and a wiring circuit board, the COB (Chip On Board) type connection method, which is widely used in BGA (Ball Grid Array) and CSP (Chip Size Package), is an FC connection method. The FC connection method is also widely used in COC (Chip On Chip) type connection methods, in which bumps or wiring are formed on the semiconductor chip to connect semiconductor chips. From the perspective of improving productivity, COW (Chip On Wafer), in which semiconductor chips are connected on a wafer and then separated into individual pieces to create a semiconductor package, and WOW (Wafer On Wafer), in which wafers are pressed together and then separated into individual pieces to create a semiconductor package, are also attracting attention. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2008-294382 [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] This disclosure relates to a method for suppressing the retention of voids in an adhesive layer formed from a film-like adhesive when manufacturing a semiconductor device by a method that includes attaching a film-like adhesive to a semiconductor chip or semiconductor wafer, which is interposed between a semiconductor chip having a connection portion and another circuit component having a connection portion to seal the connection portion. [Means for solving the problem]

[0005] One aspect of this disclosure provides a method for manufacturing a semiconductor device, comprising the steps of: preparing an adhesive-attached circuit member having a first main body and a first connection portion provided on one main surface of the first main body, and a film-like adhesive attached to the main surface of the first main body on the side of the first connection portion; and superimposing the adhesive-attached circuit member onto a second main body and a second connection portion provided on the main surface of the second main body, with the film-like adhesive facing toward the second circuit member; and heating and pressurizing the laminate having the first circuit member, the film-like adhesive, and the second circuit member to form a bonded body having the first circuit member, the adhesive layer which is the cured film-like adhesive, and the second circuit member, wherein the first connection portion and the second connection portion are joined together, and the first connection portion and the second connection portion are sealed by the adhesive layer. The first circuit member is a semiconductor chip or semiconductor wafer, and the second circuit member is a wiring circuit board, a semiconductor chip, or a semiconductor wafer. The adhesive-attached circuit member is prepared by a method that includes applying the film-like adhesive to the main surface of the main body where the first connection portion is provided by applying pressure to the main surface of the main body where the first connection portion is provided by heating a laminate having a main body and the semiconductor chip or semiconductor wafer having the main body and the first connection portion provided on one main surface of the main body and the film-like adhesive laminated on the main surface of the main body where the first connection portion is provided, while heating to 60 to 100°C for 30 seconds to 10 minutes.

[0006] The film-like adhesive contains an epoxy resin, a curing agent, and a fluxing agent. When the film-like adhesive is subjected to heat treatment at 80°C for 5 minutes, the melt viscosity of the film-like adhesive at 80°C is 4000 Pa·s or more and 10000 Pa·s or less before the heat treatment, and 11000 Pa·s or less after the heat treatment.

[0007] Another aspect of the present disclosure provides a film-like adhesive used in a method for manufacturing a semiconductor device, comprising the steps of: preparing an adhesive-attached circuit member having a first main body and a first connection portion provided on one main surface of the first main body, and a film-like adhesive attached to the main surface of the first main body on the side of the first connection portion; and superimposing the adhesive-attached circuit member onto a second main body and a second connection portion provided on the main surface of the second main body, with the film-like adhesive oriented toward the side of the second circuit member; and heating and pressurizing a laminate having the first circuit member, the film-like adhesive, and the second circuit member to form a laminate having the first circuit member, the adhesive layer which is the cured film-like adhesive, and the second circuit member, wherein the first connection portion and the second connection portion are joined together, and the first connection portion and the second connection portion are sealed by the adhesive layer. The method provides a film-like adhesive used in a method for manufacturing a semiconductor device, wherein the first circuit member is a semiconductor chip or semiconductor wafer, and the second circuit member is a wiring circuit board, a semiconductor chip, or a semiconductor wafer. In other words, another aspect of this disclosure provides an application or use of the film-like adhesive for manufacturing semiconductor devices by the method described above.

[0008] The film-like adhesive contains an epoxy resin, a curing agent, and a fluxing agent. When the film-like adhesive is heat-treated at 80°C for 5 minutes, its melt viscosity at 80°C is 4000 Pa·s or more and 10000 Pa·s or less before the heat treatment, and 11000 Pa·s or less after the heat treatment. [Effects of the Invention]

[0009] According to one aspect of this disclosure, a method is provided for manufacturing a semiconductor device by a method that includes attaching a film-like adhesive to a semiconductor chip or semiconductor wafer, which is interposed between a semiconductor chip having a connection portion and another circuit member having a connection portion to seal the connection portion, and for suppressing the retention of voids in the adhesive layer formed from the film-like adhesive. [Brief explanation of the drawing]

[0010] [Figure 1] It is a schematic cross-sectional view showing an example of a method for manufacturing a semiconductor device. [Figure 2] It is a schematic cross-sectional view showing an example of a semiconductor device. [Figure 3] It is a schematic cross-sectional view showing an example of a semiconductor device. [Figure 4] It is a schematic cross-sectional view showing an example of a semiconductor device.

Embodiments for Carrying Out the Invention

[0011] The present invention is not limited to the examples described below. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant descriptions may be omitted. The positional relationships such as up, down, left, and right are based on the positional relationships shown in the drawings unless otherwise specified. The dimensional ratios in the drawings are not limited to the illustrated ratios.

[0012] Method for Manufacturing a Semiconductor Device FIG. 1 is a process cross-sectional view schematically showing an example of a method for manufacturing a semiconductor device.

[0013] First, as shown in (a) of FIG. 1, a first circuit member 10 having a substrate 1 and a first main body portion 10A provided with a wiring 3 on the substrate 1, and a first connection portion 10B provided on a main surface 10S of the first main body portion 10A is prepared. The first circuit member 10 can be a semiconductor chip or a semiconductor wafer. In the example of FIG. 1, the first connection portion 10B is a solder ball bump.

[0014] The substrate 1 is a semiconductor substrate and can be a substrate including an elemental semiconductor composed of the same kind of elements such as silicon and germanium, or a compound semiconductor such as gallium arsenide and indium phosphide.

[0015] As shown in (b) of FIG. 1, an adhesive circuit member 15 is formed by attaching a film-shaped adhesive 40 onto the main surface 10S on the first connection portion 10B side of the first main body portion 10A. The film-shaped adhesive 40 is, for example, a laminate having a first circuit member 10 which is a semiconductor chip or a semiconductor wafer having the first connection portion 10B provided on one of the main surfaces 10S of the first main body portion 10A and the film-shaped adhesive 40 laminated on the main surface 10S. The laminate is pressed for 30 seconds to 10 minutes while being heated to 60 to 100°C, so as to be attached to the main surface 10S on the first connection portion 10B side of the first main body portion 10A. The film-shaped adhesive 40 can be attached to the main surface 10S by, for example, heat pressing, roll lamination, or vacuum lamination. The area and thickness of the supplied film-shaped adhesive 40 are appropriately set according to the size of the first circuit member 10 and the height of the first connection portion 10B, etc.

[0016] The heating temperature for attaching the film-shaped adhesive 40 to the first main body portion 10A may be 60 to 90°C. The pressing time for attaching the film-shaped adhesive 40 to the first main body portion 10A may be 1 minute or more, and may also be 9 minutes or less, 8 minutes or less, 7 minutes or less, 6 minutes or less, or 5 minutes or less. According to the attachment conditions including these heating temperature and pressing time, when using the film-shaped adhesive 40 showing the melt viscosity described later, it is difficult for voids to occur during attachment, and the progress of the curing reaction of the film-shaped adhesive 40 can be suppressed. The pressure for pressing the film-shaped adhesive 40 to the first main body portion 10A may be, for example, 0.01 to 1.0 MPa.

[0017] If the first circuit member 10 is a semiconductor chip, a semiconductor chip (first circuit member 10) having a fragmented first body portion 10A and an adhesive-coated circuit member 15 equipped with the film adhesive 40 may be formed by a method that includes heating a laminate having a main body portion and a first connection portion 10B provided on one main surface of the main body portion, and a film-like adhesive 40 laminated on the main surface on which the first connection portion 10B of the main body portion is provided, to 60 to 100°C and pressurizing for 30 seconds to 10 minutes, thereby attaching the film-like adhesive 40 to the main surface on which the first connection portion 10B of the main body portion is provided, and dicing the main body portion of the semiconductor wafer together with the film-like adhesive 40. Alternatively, the film adhesive 40 may be attached to a semiconductor chip fragmented by dicing.

[0018] Next, the adhesive-coated circuit member 15 is superimposed on the second circuit member 20, which has a second main body 20A and a second connecting portion 20B provided on the main surface of the second main body 20A, with the film-like adhesive 40 facing the second circuit member 20. By heating and pressurizing the laminate having the first circuit member 10, the film-like adhesive 40, and the second circuit member 20, a semiconductor device 101 is formed, which is a joint having the first circuit member 10, the adhesive layer 40a, and the second circuit member 20. The adhesive layer 40a is a cured film-like adhesive. In the semiconductor device 101, the first connecting portion 10B and the second connecting portion 20B are metal-bonded so as to be electrically connected. The first connecting portion 10B and the second connecting portion 20B are sealed by the adhesive layer 40a. In other words, the gap between the first circuit member 10 and the second circuit member 20 is filled by the adhesive layer 40a, which is a cured film-like adhesive.

[0019] The second circuit component 20 may be a wiring circuit board, a semiconductor chip, or a semiconductor wafer.

[0020] If the second circuit component 20 is a wiring circuit board, the second main body portion 20A may be an insulating substrate mainly composed of, for example, glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimidotriazine, etc. The second connection portion 20B may be wiring formed by removing a part of a metal film by etching.

[0021] The connecting parts, such as the first connecting part 10B and the second connecting part 20B, may be metal layers containing one or more metals selected from, for example, gold, silver, copper, solder, nickel, tin, and lead. The main component of the solder may be, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, or tin-silver-copper. The metal constituting the connecting part may be gold, silver, copper, or solder, or silver, copper, or solder, or solder. The connecting part may be a metal layer formed by plating. The connecting part may be a single layer or may contain multiple metal layers.

[0022] The pressure applied to form the joint is set considering the variation in the number and height of the first connection parts 10B and the amount of deformation of the first connection parts 10B and the second connection parts 20B due to the pressure. The heating temperature for forming the joint is set to a temperature at which a metallic joint is formed between the first connection parts 10B and the second connection parts 20B, and this temperature is usually above the melting point of the first connection part 10B. For example, if the first connection part 10B is a solder ball bump, the heating temperature may be 230°C or higher, or 240°C or higher, or 300°C or lower.

[0023] The heating and pressing time for forming the joint may be 20 seconds or less, 10 seconds or less, or 5 seconds or less, for example, if the surface of the first connection part 10B is formed by solder. If the connection between the first connection part 10B and the second connection part 20B is a copper-copper or copper-gold metal connection, the heating and pressing time may be 60 seconds or less. The heating and pressing time is usually 1 second or more.

[0024] The heating temperature for forming the joint may be higher than the reaction initiation temperature of the film adhesive. By accelerating the curing of the film adhesive during the heating and pressurizing process for joint formation, even better effects in terms of void suppression and connectivity can be obtained.

[0025] The formed joint may be further heated in an oven or the like. This heating can further improve connection reliability and insulation reliability. The heating temperature and time should be set so that the film adhesive hardens sufficiently.

[0026] The laminate may be pressurized by atmospheric pressure to form a joint. When forming a joint using a crimping machine, the heat from the crimping machine does not easily transfer to the adhesive (fillet) that protrudes from the sides of the connection, so it may be necessary to further heat the joint to allow the adhesive to harden sufficiently. By heating the joint while pressurizing it with atmospheric pressure, the retention of voids can be suppressed more effectively. Pressurizing with atmospheric pressure is also advantageous because, as described later, when forming a joint via a temporary crimp, multiple temporary crimps can be heated and pressurized at once. Pressurizing with atmospheric pressure is also superior from the viewpoint of fillet suppression. Fillet suppression is important in response to the trend towards miniaturization and high density of semiconductor devices. The atmospheric pressure for pressurization may be, for example, above atmospheric pressure but 1 MPa or less, or 0.05 to 0.5 MPa.

[0027] Examples of equipment for pressurizing by atmospheric pressure include pressurized reflow furnaces and pressurized ovens. The atmosphere for pressurization is not particularly limited, but may include, for example, air, nitrogen, formic acid, etc.

[0028] The joint formed by the crimping machine may be further heated while being pressurized by air pressure. The heating temperature for this purpose may be higher than at least one of the melting points of the first joint 10B or the second joint 20B.

[0029] The process of forming the joint may include forming a temporary bond by heating and pressurizing a laminate having a first circuit member 10, a film-like adhesive 40, and a second circuit member 20 to a temperature lower than the melting point of the first connection portion 10B and the melting point of the second connection portion 20B, and forming a joint by heating and pressurizing the temporary bond to a temperature higher than at least one of the melting points of the first connection portion 10B or the second connection portion 20B.

[0030] In the temporary crimping process, for example, an adhesive-coated circuit member having a semiconductor chip separated on a dicing tape is picked up, attached to the crimping tool of a crimping machine, and temporarily crimped to a second circuit member. In the temporarily crimped body, the opposing first connection part 10B and the second connection part 20B may be in contact. If the connection parts are in contact with each other after temporary crimping, a metallic bond between the connection parts is more easily formed during crimping to form a joint, and there is a tendency for less biting of the film-like adhesive 40. The load for temporary crimping may be, for example, 0.009 to 0.2 N per first connection part 10B. When the pressure is in this range, the retention of voids is particularly easily suppressed. The pressurizing time for temporary crimping may be, for example, 5 seconds or less, 3 seconds or less, or 2 seconds or less.

[0031] A crimping machine such as a flip-chip bonder may be used for heating and pressurizing to form the joint following the formation of the temporary crimp. A different crimping machine may be used than the one used to form the temporary crimp. The pressurizing load for forming the joint may be, for example, 0.009 to 0.2 N per first connection part 10B.

[0032] In semiconductor devices with a TSV structure, where multiple semiconductor chips are stacked three-dimensionally, the multiple semiconductor chips may be stacked one by one and temporarily compressed, and then the stacked multiple semiconductor chips may be heated and pressurized together to form a bond.

[0033] <Semiconductor device> Figures 2, 3, and 4 are schematic cross-sectional views showing other examples of semiconductor devices that can be manufactured by the illustrated methods described above.

[0034] The semiconductor device 102 (joint) shown in Figure 2 differs from the semiconductor device 101 in Figure 1 in that the first connection portion 10B is a printed bump. The semiconductor device 103 shown in Figure 3 differs from the semiconductor device 101 in Figure 1 in that the second circuit member 20 is a wiring circuit board, and its second main body portion 20A has a solder resist 7 provided on the substrate 1.

[0035] The semiconductor device 200 shown in Figure 4 is an example of a semiconductor device employing TSV (Through-Silicon Via) technology. The semiconductor device 200 comprises a circuit member 21 having an interposer and wiring formed on one of its main surfaces, and a first-layer circuit member 11, a second-layer circuit member 12, and a third-layer circuit member 13 stacked sequentially on the circuit member 21. The second main body 21A is the interposer, and the second connection part 21B is the wiring provided on the interposer. Circuit members 11, 12, and 13 are semiconductor chips each having a main body 10A having a substrate 1, through-electrodes 5 penetrating the substrate 1, and wiring 3 provided on the through-electrodes 5, and a connection part 10B provided on one of the main surfaces of the main body 10A. The connection part 21B (wiring) of the circuit member 21 is connected to the connection part of the circuit member 11, which is the first-layer semiconductor chip, thereby creating a flip-chip connection between the first-layer semiconductor chip (circuit member 11) and the circuit member 21. A hardened film-like adhesive layer 40a is filled in the gap between the first semiconductor chip (circuit member 11) and the interposer (main body 21A). The first semiconductor chip (circuit member 11) is connected to the second semiconductor chip (circuit member 12) via a connector. The second semiconductor chip (circuit member 12) is connected to the third semiconductor chip (circuit member 13) via a connector. The wiring 3 provided on the front and back of each semiconductor chip is connected to each other by through-electrodes 5 that penetrate the substrate 1. The material of the through-electrodes 5 may be, for example, copper or aluminum. A hardened film-like adhesive layer 40a is filled in the gap between the semiconductor chips. Such a semiconductor device in which multiple semiconductor chips are stacked can be manufactured by, for example, a method that includes forming a bond using the first layer of semiconductor chips as a first circuit member and a circuit member having an interposer as a second circuit member in the manner described in the above example, and forming a bond using the two semiconductor chips as either a first or second circuit member in the manner described in the above example.

[0036] <Film-type adhesive> An example of a film-like adhesive contains an epoxy resin, a curing agent, and a fluxing agent. This film-like adhesive can be used as the film-like adhesive 40 according to the above example.

[0037] When a film-like adhesive is subjected to heat treatment at 80°C for 5 minutes, the melt viscosity of the film-like adhesive at 80°C is between 4,000 Pa·s and 10,000 Pa·s before heat treatment, and 11,000 Pa·s or less after heat treatment.

[0038] The melt viscosity here is measured by placing a test specimen of a film-like adhesive with a thickness of 400 ± 50 μm between parallel circular plates with a diameter of 8 mm, and measuring the melt viscosity (complex viscosity ratio) while heating from 35°C to 150°C at a heating rate of 10°C / min while applying a 1% strain at a frequency of 10 Hz. The melt viscosity at 80°C is then read from the graph showing the relationship between the obtained melt viscosity and temperature. The test specimen may be a laminate formed from two or more film-like adhesives.

[0039] If the melt viscosity of the film-like adhesive at 80°C before heat treatment at 80°C for 5 minutes is between 4,000 Pa·s and 10,000 Pa·s, then during the application process of the film-like adhesive, the adhesive can fill in the uneven surface, including the connection points, thereby suppressing the retention of voids.

[0040] If the melt viscosity at 80°C of the film-like adhesive after heat treatment at 80°C for 5 minutes is 11,000 Pa·s or less, the film-like adhesive maintains appropriate fluidity after undergoing the heat history for bonding, thereby suppressing the retention of voids during the heating and pressurizing process for forming the bonded body. From a similar viewpoint, the melt viscosity at 80°C of the film-like adhesive after heat treatment at 80°C for 5 minutes may be 10,500 Pa·s or less, 4,000 Pa·s or more, or 5,000 Pa·s or more.

[0041] The increase in the melt viscosity of the film-like adhesive at 80°C after a 5-minute heat treatment at 80°C, compared to the melt viscosity at 80°C before the heat treatment at 80°C for 5 minutes, may be 50% or less. A small increase in melt viscosity due to heat treatment can more significantly suppress the retention of voids during the heating and pressurizing process for forming the bond. The increase in melt viscosity at 80°C may be 1% or more, or 5% or more. When the melt viscosity of the film-like adhesive at 80°C is η0 before heat treatment and η1 after heat treatment, the increase in melt viscosity at 80°C is calculated by the following formula. Increase rate of melt viscosity = {(η1-η0) / η0} × 100

[0042] The curing reaction rate of the film-like adhesive after heat treatment at 80°C for 5 minutes may be 1% or less. This further significantly suppresses the retention of voids during the heating and pressurizing process for forming the bond. When the curing reaction rate is 1% or less, the increase in melt viscosity at 80°C tends to be 50% or less. The curing reaction rate may be 0% or more, or 0.1% or more.

[0043] The curing reaction rate here is given by the following formula, where ΔH1 (J / g) is the amount of heat generated by the curing reaction in the film adhesive before heat treatment, and ΔH2 (J / g) is the amount of heat generated by the curing reaction in the film adhesive after heat treatment: Curing reaction rate (%) = {(ΔH1 - ΔH2) / ΔH1} × 100 These are values ​​calculated by the following method. ΔH1 and ΔH2 are determined by differential scanning calorimetry under conditions of a heating rate of 20°C / min and a temperature range of 30 to 300°C. The measurement atmosphere can be air or nitrogen. ΔH2 is measured using a sample of film-like adhesive that has been heat-treated with a vacuum laminator at 80°C for 5 minutes under a pressure of 0.5 MPa. The amount of the sample may be, for example, about 10 mg.

[0044] The epoxy resins contained in film-type adhesives are selected from, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type epoxy resin, triphenylmethane type epoxy resin, dicyclopentadiene type epoxy resin, and various polyfunctional epoxy resins. These can be used individually or in combination of two or more types. The weight-average molecular weight of the epoxy resin is usually less than 10,000.

[0045] The epoxy resin content may be, for example, 5 to 75% by mass, 10 to 50% by mass, or 15 to 35% by mass, based on the total mass of the film-like adhesive.

[0046] The curing agent contained in the film-like adhesive includes, for example, at least one selected from imidazole-based curing agents, phenolic resin-based curing agents, acid anhydride-based curing agents, amine-based curing agents, and phosphine-based curing agents. Imidazole-based curing agents, phenolic resin-based curing agents, acid anhydride-based curing agents, and amine-based curing agents exhibit flux activity that suppresses the formation of oxide films at the connection site, which can contribute to improving connection reliability and insulation reliability. Based on the type and content of the curing agent, the melt viscosity and curing reaction rate at 80°C and the rate of increase in melt viscosity due to heat treatment of the film-like adhesive after heat treatment at 80°C for 5 minutes can be controlled.

[0047] Examples of imidazole-based curing agents include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2 Examples include '-undecylimidazolyl-(1')'-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanurate adduct, 2-phenylimidazole isocyanurate adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and adducts of epoxy resins with imidazole compounds. When the imidazole-based curing agent is 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid, 2-phenyl-4,5-dihydroxymethylimidazole, or a combination thereof, the increase in melt viscosity of the film-like adhesive due to heat treatment is moderately suppressed. The imidazole-based curing agent may also be a microencapsulated latent curing agent.

[0048] When the imidazole-based curing agent content is low, the increase in melt viscosity of the film-like adhesive due to heat treatment is moderately suppressed. For example, the imidazole-based curing agent content may be 5 parts by mass or less, or 4 parts by mass or less, or 1 part by mass or more, per 100 parts by mass of epoxy resin. The imidazole-based curing agent may be combined with a phenol resin-based curing agent, an acid anhydride-based curing agent, or an amine-based curing agent.

[0049] Phenolic resin curing agents are compounds having two or more phenolic hydroxyl groups. Examples include phenol novolac resins, cresol novolac resins, phenol aralkyl resins, cresol naphthol formaldehyde polycondensates, triphenylmethane-type polyfunctional phenolic resins, and various polyfunctional phenolic resins. These can be used individually or in combination of two or more.

[0050] The equivalent ratio (phenolic hydroxyl group / epoxy group, molar ratio) of the phenolic resin-based curing agent to the epoxy resin may be 0.3 to 1.5, 0.4 to 1.0, or 0.5 to 1.0 from the viewpoint of good curability, adhesion, and storage stability. When the equivalent ratio is 0.3 or higher, curability and adhesion tend to improve. When the equivalent ratio is 1.5 or lower, excessive unreacted phenolic hydroxyl groups do not remain, water absorption is kept low, and insulation reliability tends to improve.

[0051] Examples of acid anhydride-based curing agents include methylcyclohexanetetracarboxylic acid dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic acid dianhydride, and ethylene glycol bis-anhydrotrimellitate. These can be used individually or in combination of two or more.

[0052] The equivalent ratio (acid anhydride group / epoxy group, molar ratio) of the acid anhydride-based curing agent to the epoxy resin may be 0.3 to 1.5, 0.4 to 1.0, or 0.5 to 1.0, from the viewpoint of good curability, adhesion, and storage stability. When the equivalent ratio is 0.3 or higher, curability and adhesion tend to improve. When the equivalent ratio is 1.5 or lower, excessive unreacted acid anhydride does not remain, water absorption is kept low, and insulation reliability tends to improve.

[0053] As an amine-based curing agent, for example, dicyandiamide can be used.

[0054] The equivalent ratio (amine / epoxy group, molar ratio) of the amine-based curing agent to the epoxy resin is 0.3 to 1.5, but may also be 0.4 to 1.0 or 0.5 to 1.0, from the viewpoint of good curability, adhesion, and storage stability. When the equivalent ratio is 0.3 or higher, curability and adhesion tend to improve. When the equivalent ratio is 1.5 or lower, there is no excess unreacted amine remaining, and insulation reliability tends to improve.

[0055] Examples of phosphine-based curing agents include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra(4-methylphenyl)borate, and tetraphenylphosphonium (4-fluorophenyl)borate.

[0056] The content of the phosphine-based curing agent may be 0.1 to 10 parts by mass, or 0.1 to 5 parts by mass, per 100 parts by mass of epoxy resin. When the content of the phosphine-based curing agent is 0.1 parts by mass or more, curing performance tends to improve. When the content of the phosphine-based curing agent is 10 parts by mass or less, the adhesive tends not to harden before the metal bond is formed, and connection failures tend not to occur. The phosphine-based curing agent may be combined with a phenol resin-based curing agent, an acid anhydride-based curing agent, or an amine-based curing agent.

[0057] The fluxing agent contained in the film-like adhesive can be, for example, one compound having a group represented by formula (1), or a combination of two or more compounds.

[0058] [ka]

[0059] In formula (1), R 1 This indicates an electron-donating group. Examples of electron-donating groups include alkyl groups, hydroxyl groups, amino groups, alkoxy groups, and alkylamino groups. The electron-donating group may be an alkyl group, a hydroxyl group, or an alkoxyl group, or it may be an alkyl group.

[0060] The alkyl group may be an alkyl group having 1 to 10 carbon atoms, or an alkyl group having 1 to 5 carbon atoms. The alkyl group may be linear or branched, or it may be linear. If the alkyl group is linear, from the viewpoint of steric hindrance, the number of carbon atoms in the alkyl group may be less than or equal to the number of carbon atoms in the main chain containing the carboxylic acid.

[0061] The alkoxy group may be an alkoxy group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 5 carbon atoms. The alkyl group portion of the alkoxy group may be linear or branched, or it may be linear. If the alkyl group portion of the alkoxy group is linear, from the viewpoint of steric hindrance, its number of carbon atoms may be less than or equal to the number of carbon atoms in the main chain containing the carboxylic acid.

[0062] The alkylamino group may be a monoalkylamino group or a dialkylamino group. The monoalkylamino group may be a monoalkylamino group having 1 to 10 carbon atoms or a monoalkylamino group having 1 to 5 carbon atoms. The alkyl portion of the monoalkylamino group may be linear or branched, or it may be linear. The dialkylamino group may be a dialkylamino group having 1 to 20 carbon atoms or a dialkylamino group having 1 to 10 carbon atoms. The alkyl portion of the dialkylamino group may be linear or branched, or it may be linear.

[0063] The fluxing agent may be a dicarboxylic acid compound having two carboxyl groups. Compared to monocarboxylic acids having one carboxyl group, dicarboxylic acid compounds are less likely to volatilize even at high temperatures during connection, further suppressing void formation. When using dicarboxylic acid compounds, the increase in viscosity of the adhesive during storage and connection work can be further suppressed compared to when using compounds having three or more carboxyl groups. As a result, the connection reliability of semiconductor devices can be further improved.

[0064] The flux agent may contain a dicarboxylic acid compound represented by the following formula (2). According to the flux agent containing the dicarboxylic acid compound represented by the following formula (2), the reflow resistance and connection reliability of the semiconductor device can be further improved.

[0065] [Chemical formula]

[0066] In formula (2), R 1 represents an electron-donating group, R 2 represents a hydrogen atom or an electron-donating group, and n represents an integer from 0 to 10.

[0067] n in formula (2) may be an integer from 2 to 10 or an integer from 0 to 8. When n is 10 or less, the flux activity is expressed in a shorter time, and particularly when the connection time is short, better connection reliability can be obtained. When n is 2 or more, it is difficult to volatilize even due to the high temperature during connection, and the generation of voids can be further suppressed.

[0068] R 2 may be a hydrogen atom or an electron-donating group. When R 2 is a hydrogen atom, the melting point tends to be low, and the connection reliability (solder wetting property) may be improved. For example, the melting point of a flux agent in which R 1 and R 2 are methyl groups tends to be higher than the melting point of a flux agent in which one of R 1 or R 2 is a methyl group.

[0069] The melting point of the flux may be 150°C or lower, 140°C or lower, or 130°C or lower. A lower melting point of the flux allows the flux activity to be sufficiently expressed before the curing reaction between the epoxy resin and the curing agent occurs, thereby enabling the production of a semiconductor device with even greater connection reliability. The melting point of the flux may be 25°C or higher, or 50°C or higher. The melting point of the flux compound can be measured, for example, by attaching a capillary tube filled with the sample to a double-tube thermometer and heating it in a warm bath.

[0070] The fluxing agent may include, for example, at least one compound selected from the group consisting of succinic acid, 2-methylglutaric acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanediic acid, and dodecanediic acid.

[0071] The flux content may be 0.5 to 10% by mass, or 0.5 to 5% by mass, based on the total mass of the film-like adhesive.

[0072] The film-like adhesive may further contain polymer components as needed. Film-like adhesives containing polymer components exhibit even better heat resistance and film-forming properties.

[0073] Examples of polymer components include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, polyetherimide resin, polyvinyl acetal resin, urethane resin, and acrylic rubber. Among these, from the viewpoint of excellent heat resistance and film formation, the high molecular weight component may be phenoxy resin, polyimide resin, acrylic rubber, cyanate ester resin, or polycarbodiimide resin, or it may be phenoxy resin, polyimide resin, or acrylic rubber. These polymer components can be used individually or in combination of two or more. In this specification, the polymer component does not include the epoxy resin mentioned above.

[0074] The glass transition temperature (Tg) of the polymer component may be 200°C or lower, 180°C or lower, or 150°C or lower, or 50°C or higher, from the viewpoint of the adhesiveability of the film-like adhesive to circuit components. If the Tg of the polymer component exceeds 200°C, it becomes difficult to fill in irregularities such as bumps on semiconductor chips, electrodes and wiring patterns formed on the substrate with the adhesive, which may relatively reduce the effect of void suppression. The Tg here is the Tg measured using a DSC (PerkinElmer DSC-7) under the conditions of a sample amount of 10 mg, a heating rate of 10°C / min, and a measurement atmosphere of air.

[0075] The weight-average molecular weight of the polymer component is usually 10,000 or higher. To exhibit good film-forming properties on its own, the weight-average molecular weight of the polymer component may be 30,000 or higher, 40,000 or higher, or 50,000 or higher. In this specification, weight-average molecular weight refers to the value on a standard polystyrene basis, measured by gel permeation chromatography (GPC).

[0076] When a film-like adhesive contains a polymer component, the content C of the polymer component d The epoxy resin content relative to C a ratio C a / C d The (mass ratio) may be 0.01 to 5, or 0.05 to 3, or 0.1 to 2. Ratio C a / C d A ratio of 0.01 or higher yields better curing properties and adhesive strength. a / C d When the value is 5 or less, better film formation properties can be obtained.

[0077] The film-type adhesive may contain fillers as needed. Fillers can, for example, further suppress void formation during connection and reduce the moisture absorption rate of the cured adhesive.

[0078] The filler may be, for example, an insulating inorganic filler, a whisker, a resin filler, or a combination thereof. Examples of insulating inorganic fillers include glass, silica, alumina, titanium oxide, carbon black, mica, and boron nitride. The insulating inorganic filler may be at least one selected from silica, alumina, titanium oxide, and boron nitride, or at least one selected from silica, alumina, and boron nitride. Examples of whiskers include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, magnesium sulfate, and boron nitride. Examples of resin fillers include, for example, fillers made of resins such as polyurethane and polyimide.

[0079] The shape, particle size, and content of the filler are not particularly limited. The filler may have its physical properties adjusted as appropriate by surface treatment.

[0080] The filler content may be 10 to 80% by mass, or 15 to 60% by mass, based on the total mass of the film-like adhesive.

[0081] In addition to the components exemplified above, the film-type adhesive may also contain additives such as antioxidants, silane coupling agents, titanium coupling agents, leveling agents, and ion trapping agents. These can be used individually or in combination of two or more.

[0082] A film-like adhesive can be obtained, for example, by a method that includes applying a resin varnish containing an epoxy resin, a curing agent, a fluxing agent, and other components added as needed, along with an organic solvent, onto a release-treated substrate film, and then removing the organic solvent from the coating by heating to form a film-like adhesive on the substrate film.

[0083] Examples of organic solvents used in the preparation of resin varnishes include dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether, toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, and ethyl acetate. These organic solvents can be used individually or in combination of two or more. Stirring, mixing, and kneading during the preparation of resin varnishes can be carried out using, for example, a stirrer, a 3-roll mill, a ball mill, a bead mill, or a homodisper.

[0084] The base film is not particularly limited as long as it has heat resistance that can withstand the heating conditions when volatilizing organic solvents. For example, it may be a polyolefin film such as polypropylene film and polymethylpentene film, a polyester film such as polyethylene terephthalate film and polyethylene naphthalate film, a polyimide film, or a polyetherimide film. The base film may be a single layer made of these films, or a multilayer film made of two or more films.

[0085] The drying conditions for volatilizing the organic solvent from the resin varnish coating can be, for example, heating at a temperature of 50 to 200°C for 0.1 to 90 minutes. The organic solvent may be removed to a level of 1.5% by mass or less based on the total mass of the film-like adhesive. [Examples]

[0086] The present invention is not limited to the embodiments illustrated below.

[0087] 1. Raw materials The raw materials used to produce the film-like adhesive are as follows: (a) epoxy resin • A polyfunctional solid epoxy resin containing a triphenolmethane skeleton (manufactured by Japan Epoxy Resin Co., Ltd., product name "EP1032H60") • Bisphenol F type liquid epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., product name "YL983U") • Flexible epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., product name "YL7175") (b) Hardener • 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanurate adduct (manufactured by Shikoku Chemicals Co., Ltd., trade name "2MAOK-PW") • 2-Phenyl-4,5-dihydroxymethylimidazole (manufactured by Shikoku Chemicals Co., Ltd., product name "2PHZ-PW") (c) Fluxant • Glutaric acid (manufactured by Tokyo Chemical Industry Co., Ltd., melting point: approximately 98°C) (d) High molecular weight components with a weight-average molecular weight Mw of 10,000 or more • Phenoxy resin (manufactured by Toto Kasei Co., Ltd., product name "ZX1356", Tg: approx. 71℃, Mw: approx. 63000) • Phenoxy resin (manufactured by Toto Kasei Co., Ltd., product name "FX-293", Tg: approx. 163℃, Mw: approx. 43700) (e) Filler (e-1) Inorganic filler • Silica filler (manufactured by Admatex Co., Ltd., product name "SE2050", average particle size 0.5 μm) • Epoxysilane-treated silica filler (manufactured by Admatex Co., Ltd., product name "SE2050-SEJ", average particle size 0.5 μm) • Acrylic surface treatment nanosilica filler (manufactured by Admatex Co., Ltd., product name "YA050C-SM", average particle size approximately 50 nm) (e-2) Resin filler • Organic filler (manufactured by Rohm & Haas Japan Co., Ltd., product name "EXL-2655", core-shell type organic microparticles)

[0088] 2. Preparation of film-like adhesive (Example 1) A mixture consisting of solids made up of 3g epoxy resin (2.4g of "EP1032", 0.45g of "YL983", and 0.15g of "YL7175"), 0.1g of the hardener "2PHZ", 0.1g of glutaric acid (0.76 mmol), 1.9g of inorganic filler (0.38g of "SE2050", 0.38g of "SE2050-SEJ", and 1.14g of "YA050C-SM"), and 0.25g of resin filler (EXL-2655), along with an amount of methyl ethyl ketone such that the solids concentration is 63% by mass, and beads of the same weight as the solids (beads with a diameter of 0.8 mm and beads with a diameter of 2.0 mm), was stirred for 30 minutes in a bead mill (Fritsch Japan Co., Ltd., planetary type fine grinder P-7). 1.7 g of phenoxy resin (ZX1356) was added to the stirred mixture, and the mixture was stirred again in a bead mill for 30 minutes. The beads used for stirring were then removed by filtration to obtain a resin varnish. The obtained resin varnish was applied to a base film (manufactured by Teijin DuPont Films Ltd., product name "Purex A53") using a small precision coating device (Ken'i Seiki), and the coating film was dried by heating at 70°C for 10 minutes in a clean oven (manufactured by ESPEC) to obtain a film-like adhesive.

[0089] (Examples 2-4 and Comparative Examples 1-3) Except for changing the types and amounts of raw materials used as shown in Table 1 below, the film-like adhesives of Examples 2-4 and Comparative Examples 1-3 were prepared in the same manner as in Example 1.

[0090] 4. Melt viscosity melt viscosity before heat treatment A 400 μm thick test specimen was prepared by laminating a film-like adhesive while heating it to 80°C. This test specimen was sandwiched between two parallel plates with a diameter of 8 cm, and the melt viscosity (complex viscosity) of the test specimen was measured using a rotary viscoelasticity measuring device (ARES, manufactured by T.A. Instruments Co., Ltd.). The melt viscosity was measured in Dynamic Temperature Ramp mode, with a frequency of 10 Hz and a 1% strain applied, while increasing the temperature from 35°C to 150°C at a heating rate of 10°C / min. From the graph showing the relationship between the obtained melt viscosity and temperature, the melt viscosity at 80°C was determined. melt viscosity after heat treatment A 400 μm thick test specimen was prepared by laminating a film-like adhesive while heating it to 80°C. The test specimen was heat-treated using a vacuum laminator (manufactured by Nikko Materials) at 80°C for 5 minutes under a pressure of 0.5 MPa. The melt viscosity of the heat-treated test specimen at 80°C was measured using the same method as the melt viscosity before heat treatment.

[0091] 5. Curing reaction rate after heat treatment A 10 mg sample of the film-like adhesive was placed in an aluminum pan, and differential scanning calorimetry was performed using a differential scanning calorimeter (PerkinElmer DSC-7) under the conditions of a heating rate of 20 °C / min and a temperature range of 30 to 300 °C. From the obtained DSC thermogram, the amount of heat generated by the curing reaction in the film-like adhesive before heat treatment, ΔH1 (J / g), was determined. The film-like adhesive was heat-treated using a vacuum laminator (Nikko Materials) at 80 °C for 5 minutes under a pressure of 0.5 MPa. Differential scanning calorimetry was performed on the heat-treated film-like adhesive sample under the same conditions to determine the amount of heat generated by the curing reaction in the film-like adhesive after heat treatment, ΔH2 (J / g). The curing reaction rate was calculated using the following formula. Curing reaction rate (%) = {(ΔH1 - ΔH2) / ΔH1} × 100

[0092] 3. Fabrication of the joint A film-like adhesive cut to a size of 8 mm square and 0.045 mm thick was applied to a semiconductor chip (chip size: 7.3 mm x 7.3 mm, thickness 0.05 mm, bump (connection part) height: approximately 45 μm (total of copper pillar and solder), number of bumps: 1048 pins, pitch 80 μm, product name: WALTS-TEG CC80, manufactured by WALTS) with solder bumps as connection points, using a vacuum laminator CV130 (manufactured by Nikko Materials) under conditions of 80°C for 5 minutes while applying a pressure of 0.5 MPa. A semiconductor chip with a film-like adhesive attached was placed on top of another semiconductor chip (chip size: 10mm x 10mm, thickness: 0.1mm, connecting metal: Au, product name: WALTS-TEG IP80, manufactured by WALTS) using a flip-chip bonder, with the film-like adhesive sandwiched between the two semiconductor chips. The two semiconductor chips were then temporarily bonded together by heating on an 80°C stage and applying pressure of 25N for 3 seconds, obtaining a temporary bonded body. The temporary bonded body was then heated to 260°C on an 80°C stage using a flip-chip bonder and applied pressure of 25N for 5 seconds, obtaining a bonded body with the connecting parts joined together.

[0093] External images of the joint were captured using an ultrasound imaging device (Insight-300, manufactured by Insight). From the obtained images, images of the adhesive layer (cured film-like adhesive) between semiconductor chips were captured using a scanner GT-9300UF (manufactured by Epson). In the captured images, void areas were identified by color correction and binarization using image processing software (Adobe Photoshop), and the percentage occupied by the void areas was calculated using a histogram. The total area of ​​the adhesive layer including the void areas was set to 100% area. Areas with a void area percentage of 5% or less were designated as "A," and areas with a void area percentage greater than 5% were designated as "B."

[0094] [Table 1]

[0095] In the joints formed using the film-like adhesives of Examples 1 to 4, it was confirmed that virtually no voids remained. In Comparative Examples 1 and 2, it was confirmed that many voids remained because the melt viscosity was high after being subjected to a thermal history of 80°C for 5 minutes following application. In Comparative Example 3, it was confirmed that many voids remained because the melt viscosity at 80°C before the thermal history was high. [Explanation of Symbols]

[0096] 10, 11, 12... (first) circuit components, 20, 21... (second) circuit components, 10A... (first) main body, 10B... (first) connection part, 10S... main surface, 15... circuit component with adhesive, 20B, 21B... (second) connection part (wiring), 40... film adhesive, 40a... adhesive layer, 101, 102, 103, 200... semiconductor device (joint).

Claims

1. A step of preparing an adhesive-coated circuit member having a first main body and a first connecting portion provided on one main surface of the first main body, and a film-like adhesive attached to the main surface of the first main body on the side of the first connecting portion, The process of forming a joint, wherein the adhesive-coated circuit member is superimposed on a second circuit member having a second main body and a second connecting portion provided on the main surface of the second main body, with the film-like adhesive facing the second circuit member, and the laminate having the first circuit member, the film-like adhesive and the second circuit member is heated and pressurized, thereby forming a joint having the first circuit member, the adhesive layer which is the cured film-like adhesive and the second circuit member, the first connecting portion and the second connecting portion being joined together and the first connecting portion and the second connecting portion being sealed by the adhesive layer, Equipped with, The first circuit component is a semiconductor chip or semiconductor wafer, and the second circuit component is a wiring circuit board, a semiconductor chip, or a semiconductor wafer. The adhesive-bonded circuit member is prepared by a method that includes heating a laminate having a main body and the first connection portion provided on one of the main surfaces of the main body, and the film-like adhesive laminated on the main surface of the main body where the first connection portion is provided, to 60 to 100°C and applying pressure for 30 seconds to 10 minutes, thereby attaching the film-like adhesive to the main surface of the main body where the first connection portion is provided. The aforementioned film-like adhesive contains epoxy resin, a curing agent, a fluxing agent, and a filler, wherein the filler contains silica filler, and the filler content is 15 to 60% by mass based on the total mass of the film-like adhesive. When the film-like adhesive is subjected to heat treatment at 80°C for 5 minutes, the melt viscosity of the film-like adhesive at 80°C is 4000 Pa·s or more and 10000 Pa·s or less before the heat treatment, and 11000 Pa·s or less after the heat treatment. A method for manufacturing semiconductor devices.

2. The first circuit component is a semiconductor chip, The method for preparing the aforementioned adhesive-bonded circuit member is, A laminate comprising a semiconductor wafer having a main body and the first connecting portion provided on one of the main surfaces of the main body, and the film-like adhesive laminated on the main surface of the main body on which the first connecting portion is provided, is subjected to pressure for 30 seconds to 10 minutes while being heated to 60 to 100°C, thereby attaching the film-like adhesive to the main surface of the main body on which the first connecting portion is provided. This includes dicing the main body together with the film-like adhesive to form a semiconductor chip having the individualized first main body and the adhesive-coated circuit member having the film-like adhesive. The method according to claim 1.

3. The method according to claim 1 or 2, wherein the curing reaction rate of the film-like adhesive is 1% or less after the heat treatment.

4. The method according to any one of claims 1 to 3, wherein the increase rate of the melt viscosity of the film-like adhesive at 80°C after the heat treatment relative to the melt viscosity of the film-like adhesive at 80°C before the heat treatment is 50% or less.

5. A step of preparing an adhesive-coated circuit member having a first main body and a first connecting portion provided on one main surface of the first main body, and a film-like adhesive attached to the main surface of the first main body on the side of the first connecting portion, The process of forming a joint, wherein the adhesive-coated circuit member is superimposed on a second circuit member having a second main body and a second connecting portion provided on the main surface of the second main body, with the film-like adhesive facing the second circuit member, and the laminate having the first circuit member, the film-like adhesive and the second circuit member is heated and pressurized, thereby forming a joint having the first circuit member, the adhesive layer which is the cured film-like adhesive and the second circuit member, the first connecting portion and the second connecting portion being joined together and the first connecting portion and the second connecting portion being sealed by the adhesive layer, Equipped with, A film-like adhesive used in a method for manufacturing a semiconductor device, wherein the first circuit component is a semiconductor chip or semiconductor wafer, and the second circuit component is a wiring circuit board, a semiconductor chip, or a semiconductor wafer, The film-like adhesive contains epoxy resin, a curing agent, a fluxing agent, and a filler, wherein the filler contains silica filler, and the filler content is 15 to 60% by mass based on the total mass of the film-like adhesive. When the film-like adhesive is subjected to heat treatment at 80°C for 5 minutes, the melt viscosity of the film-like adhesive at 80°C is 4,000 Pa·s or more and 10,000 Pa·s or less before the heat treatment, and 11,000 Pa·s or less after the heat treatment. Film-type adhesive.

6. The film-like adhesive according to claim 5, wherein the curing reaction rate of the film-like adhesive after the heat treatment is 1% or less.

7. The film-like adhesive according to claim 5 or 6, wherein the rate of increase in the melt viscosity of the film-like adhesive at 80°C after heat treatment relative to the melt viscosity of the film-like adhesive at 80°C before heat treatment is 50% or less.

8. The film-like adhesive according to any one of claims 5 to 7, wherein the epoxy resin comprises an epoxy resin having a weight-average molecular weight of less than 10,000.

9. A film-like adhesive according to any one of claims 5 to 8, further comprising a polymer component having a weight-average molecular weight of 10,000 or more.

10. The film-like adhesive according to claim 9, wherein the weight-average molecular weight of the polymer component is 30,000 or more, and the glass transition temperature of the polymer component is 200°C or less.

11. The film-like adhesive according to any one of claims 5 to 10, wherein the curing agent comprises an imidazole-based curing agent.

12. The film-like adhesive according to claim 11, wherein the content of the imidazole-based curing agent is 5 parts by mass or less per 100 parts by mass of the epoxy resin.

Images