Indication device

Abstract

To provide a display device with a simplified touch panel structure. [Solution] An example of a display device includes a plurality of subpixels arranged on a substrate and a plurality of touch portions arranged on the substrate. Each subpixel may include a driving transistor, a light-emitting element, and a pixel electrode connecting the driving transistor and the light-emitting element. Each touch portion may include a touch-sensing transistor and a touch electrode connected to the touch-sensing transistor, and the pixel electrode and the touch electrode are arranged on the same layer. Therefore, touch can be sensed using a self-capacitance method by arranging the touch electrode together with the pixel electrode on the substrate.

Description

Technical Field

[0001] [Cross - reference to Related Applications] This application claims priority to Korean Patent Application No. 10 - 2022 - 0111928, filed with the Korean Intellectual Property Office on September 5, 2022, the disclosure of which is hereby expressly incorporated by reference into this application.

[0002] This specification relates to a display device, and more particularly, to a display device capable of touch - sensing and using LEDs (Light Emitting Diodes).

Background Art

[0003] Display devices used in computer monitors, TVs, mobile phones, etc. include organic light - emitting display devices (OLEDs) that emit light by themselves, and liquid crystal display devices (LCDs) that require a separate light source.

[0004] The application range of display devices can be diversified and extended not only to computer monitors and TVs but also to personal mobile devices. As a result, research on display devices with a reduced volume and weight while having a large display area is underway.

[0005] In recent years, display devices including LEDs have attracted attention as next - generation display devices. Since LEDs are made of inorganic materials rather than organic materials, they are highly reliable and have a longer lifespan compared to liquid crystal display devices and organic light - emitting display devices.

[0006] In addition, LEDs not only have a fast lighting speed but also excellent luminous efficiency, strong impact resistance, excellent stability, and can display high - brightness images.

Summary of the Invention

Problems to be Solved by the Invention

[0007] The problem that this specification aims to solve is to provide a display device capable of improved touch sensing.

[0008] Another problem that this specification seeks to solve is to provide a display device that simplifies the structure of the touch section by using assembly wiring as touch sensing wiring.

[0009] Another problem that this specification seeks to solve is to provide a display device that simplifies the structure of the touch area by using one of the multiple wirings for driving subpixels as a touch sensing wiring.

[0010] Another problem that this specification seeks to solve is to provide a display device that can drive subpixels and touch areas simultaneously.

[0011] Another problem that this specification seeks to solve is to provide a display device capable of time-division driving subpixels and touch areas.

[0012] The problems described herein are not limited to those mentioned above, and other problems not mentioned can be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0013] A display device according to one embodiment of this specification includes a plurality of subpixels arranged on a substrate, each including a drive transistor, a light-emitting element, and a pixel electrode connecting the drive transistor and the light-emitting element, and a plurality of touch portions arranged on the substrate, each including a touch-sensing transistor and a touch electrode connected to the touch-sensing transistor, wherein the pixel electrode and the touch electrode are arranged on the same layer. Therefore, touch sensing can be performed using a self-capacitance method by arranging the touch electrode together with the pixel electrode on the substrate.

[0014] Other embodiments of this specification include a display panel on which a plurality of subpixels and a plurality of touch units are arranged, and a touch drive unit that provides touch drive signals to the plurality of touch units, wherein the plurality of subpixels and the plurality of touch units are arranged in different rows from each other. Therefore, a plurality of touch units can be arranged inside the display panel to sense touch in an in-cell manner.

[0015] Specific details of other embodiments are included in the detailed description and drawings.

[0016] According to one embodiment of the present disclosure, a touch section can be formed inside the display panel to sense touch input.

[0017] According to one embodiment of the present disclosure, the structure of the touch unit can be simplified by using one of the assembly wirings for self-assembling the light-emitting element as a touch sensing wiring.

[0018] According to one embodiment of the present disclosure, the structure of the touch section can be simplified by using one of the wirings for driving the subpixels as a touch sensing wiring.

[0019] According to one embodiment of the present disclosure, subpixels and touch areas can be driven simultaneously.

[0020] According to one embodiment of the present disclosure, subpixels and touch areas can be driven in a time-division manner.

[0021] The effects of one or more embodiments of this disclosure are not limited to those exemplified above, and a wider range of effects are included herein. [Brief explanation of the drawing]

[0022] [Figure 1] This is a schematic diagram of a display device according to one embodiment of this specification. [Figure 2] This is a circuit diagram of the subpixels and touch section of a display device according to one embodiment of this specification. [Figure 3]It is an enlarged plan view of a display panel of a display device according to an embodiment of the present specification. [Figure 4] It is a cross-sectional view taken along A-A' and B-B' of FIG. 3. [Figure 5] It is a cross-sectional view taken along A-A' and C-C' of FIG. 3. [Figure 6] It is a cross-sectional view taken along D-D' of FIG. 3. [Figure 7] It is a timing diagram showing an example of signals input to sub-pixels and a touch part of a display device according to an embodiment of the present specification. [Figure 8] It is an exemplary graph showing the amount of voltage change of a touch part according to the presence or absence of an external input in a display device according to an embodiment of the present specification. [Figure 9] It is a circuit diagram of sub-pixels and a touch part of a display device according to another embodiment of the present specification. [Figure 10] It is an enlarged plan view of a display panel of a display device according to another embodiment of the present specification. [Figure 11] It is a cross-sectional view taken along D-D' of FIG. 10. [Figure 12] It is a timing diagram showing an example of signals input to sub-pixels and a touch part of a display device according to another embodiment of the present specification.

Mode for Carrying Out the Invention

[0023] The advantages, features, and methods for achieving them of the present specification will become clear by referring to the embodiments described in detail below together with the accompanying drawings. However, the present specification is not limited to the embodiments disclosed below, and is embodied in various different forms. Merely, these embodiments are provided so that the disclosure of the present specification becomes complete and so that those having ordinary knowledge in the technical field to which the present specification pertains can fully know the scope of the invention. The present specification is only defined by the scope of the claims.

[0024] The shapes, areas, proportions, angles, numbers, etc. disclosed in the drawings illustrating the embodiments of this specification are illustrative and the specification is not limited to those illustrated. Throughout the specification, the same reference numerals refer to the same components. In addition, if a detailed explanation of related prior art is deemed likely to unnecessarily obscure the gist of this specification, such detailed explanation may be omitted. When "includes," "has," "contains," etc., are used in this specification, other parts may be added unless "only" is used. When a component is expressed singularly, it may include multiple components unless otherwise explicitly stated.

[0025] When interpreting the constituent elements, they shall be interpreted as including a margin of error, even if not explicitly stated otherwise.

[0026] When describing spatial relationships, for example, when describing the relationship between two parts using phrases like "on top," "above," "below," or "next to," unless "immediately" or "directly" is used, it is possible that one or more other parts are located between the two parts.

[0027] When an element or layer is referred to as "on" another element or layer, this can include cases where another layer or other element is interposed immediately above or between the other element.

[0028] Furthermore, while terms such as "first," "second," etc., are used to describe a variety of components, these components are not limited by these terms. These terms are used simply to distinguish one component from another and do not prescribe any order or sequence. Accordingly, the first component referred to below may be the second component within the technical concept of this specification.

[0029] Throughout the specification, the same reference numeral refers to the same component.

[0030] The area and thickness of each component shown in the drawings are provided for illustrative purposes only, and this specification is not necessarily limited to the area and thickness of the components shown.

[0031] The features of each of the various embodiments described herein are partially or entirely combinable or combined with one another, enabling a variety of technically diverse interdependencies and drives, and each embodiment may be implemented independently of the others or together in relation to one another. The term “exemplary” may be used interchangeably with the term “example,” and may have the same or similar meaning as “example.”

[0032] In the following, this specification will be described with reference to the drawings. All components of each display device according to all embodiments of this disclosure are operably coupled and configured.

[0033] Figure 1 is a schematic diagram of a display device according to one embodiment of this specification. In Figure 1, for the sake of explanation, the display panel PN, gate drive unit GD, data drive unit DD, touch drive unit TD, and timing controller TC are shown among the various components of the display device 100.

[0034] Referring to Figure 1, the display device 100 includes a display panel PN containing a plurality of subpixels SP, a gate drive unit GD and a data drive unit DD that supply various signals to the display panel PN, a timing controller TC that controls the gate drive unit GD and the data drive unit DD, and a touch drive unit TD for sensing touch input.

[0035] The display panel PN is a configuration for displaying images to the user and includes multiple sub-pixels SP. Multiple scan lines SL and multiple data lines DL intersect with each other in the display panel PN, and each of the multiple sub-pixels SP is connected to the scan lines SL and data lines DL. In addition, each of the multiple sub-pixels SP may be connected to high-potential power lines, low-potential power lines, reference lines, etc.

[0036] Multiple subpixels SP are the smallest units that make up a screen, and each of the multiple subpixels SP may include a light-emitting element and a pixel circuit for driving it. Multiple light-emitting elements can be defined differently depending on the type of display panel PN. For example, if the display panel PN is an inorganic light-emitting display panel, the light-emitting elements may be LEDs (Light-emitting Diodes) or micro-LEDs (Micro Light-emitting Diodes).

[0037] The gate drive unit GD supplies multiple scan signals SCAN to multiple scan wirings SL using multiple gate control signals GCS provided by the timing controller TC. In Figure 1, one gate drive unit GD is shown spaced apart on one side of the display panel PN, but the number and arrangement of gate drive units GD are not limited to this.

[0038] The data drive unit DD converts the video data RGB input from the timing controller TC into a data voltage Vdata using a reference gamma voltage, based on multiple data control signals DCS provided by the timing controller TC. The data drive unit DD can then supply the converted data voltage Vdata to multiple data lines DL.

[0039] The timing controller TC aligns the externally input video data RGB and supplies it to the data drive unit DD. The timing controller TC can generate a gate control signal GCS and a data control signal DCS using externally input synchronization signals, such as a dot clock signal, a data enable signal, and horizontal / vertical synchronization signals. The timing controller TC can then control the gate drive unit GD and the data drive unit DD by supplying the generated gate control signal GCS and data control signal DCS to them, respectively.

[0040] The touch drive unit TD drives the touch area during the touch sensing period based on a touch enable signal input from the timing controller TC or an external configuration. During the touch sensing period, the touch drive unit TD can sense touch input by supplying touch drive signals to multiple touch electrodes of the touch area through the touch sensing wiring Sen.

[0041] The touch unit has a configuration that includes multiple touch electrodes for detecting touch input. The touch unit is placed on the display panel PN and can detect touch input on the display panel PN. The multiple touch electrodes are connected to a touch sensing wiring Sen and a touch drive unit TD to sense touch input. In this case, the arrangement of the touch electrodes can be done in an add-on type where a separate touch unit is fabricated and attached to the display panel PN, an on-cell type where the touch unit is directly formed on the display panel PN, or an in-cell type where the touch unit is built inside the display panel PN.

[0042] Furthermore, the touch unit can sense touch using either a mutual-capacitance or self-capacitance method. For example, in the case of a mutual-capacitance method, the touch unit may consist of a drive touch electrode to which a touch drive signal is applied, and a sensing touch electrode that detects a touch sensing signal and forms a capacitance with the drive touch electrode. Touch can then be sensed based on the change in capacitance between the drive touch electrode and the sensing touch electrode. In the case of a self-capacitance method, the touch unit may consist of multiple touch electrodes, each functioning as both a drive touch electrode and a sensing touch electrode. Touch input can then be sensed based on the change in capacitance of the touch electrode due to the presence or absence of touch by applying a touch drive signal to the touch electrode.

[0043] In the following description, the touch portion of the display device 100 according to one embodiment of this specification is described as an in-cell type in which a touch electrode is built into the display panel PN, and is a self-capacitance type that senses a touch by measuring the change in capacitance with a single touch electrode.

[0044] In the following, the multiple subpixels SP and touch portion of the display panel PN of the display device 100 according to one embodiment of this specification will be described in more detail.

[0045] Figure 2 is a circuit diagram of the subpixels and touch portion of a display device according to one embodiment of this specification. The subpixels and touch portion of Figure 2 may be used in the display device of Figure 1 or any other display device of this disclosure.

[0046] Referring to Figure 2, each of the multiple subpixels SP includes a first transistor T1, a second transistor T2, a third transistor T3, a storage capacitor Cst, and one or more light-emitting elements LEDs, while the touch section TU includes a touch sensing transistor ST, a touch electrode TE, and a touch capacitor Cf.

[0047] Referring to Figure 2, each of the multiple sub-pixels SP includes a first transistor T1, a second transistor T2, and a third transistor T3, each containing a gate electrode, a source electrode, and a drain electrode. The first transistor T1, the second transistor T2, and the third transistor T3 can be P-type or N-type thin-film transistors. For example, in a P-type thin-film transistor, a hole moves from the source electrode to the drain electrode, so current can flow from the source electrode to the drain electrode. In an N-type thin-film transistor, an electron moves from the source electrode to the drain electrode, so current can flow from the drain electrode to the source electrode. In the following explanation, we will assume, but are not limited to, that the first transistor T1, the second transistor T2, and the third transistor T3 are N-type thin-film transistors in which current flows from the drain electrode to the source electrode.

[0048] The first transistor T1 is a transistor that transmits a data voltage Vdata to the gate electrode of the second transistor T2. The first transistor T1 includes a gate electrode connected to the first scan trace SL1, a drain electrode connected to the data trace DL, and a source electrode connected to the gate electrode of the second transistor T2. The first transistor T1 can be turned on by a signal from the first scan trace SL1, and the data voltage Vdata can be transmitted from the data trace DL to the gate electrode of the second transistor T2 through the turned-on first transistor T1. Thus, the first transistor T1 can be referred to as a switching transistor.

[0049] The second transistor T2 is a transistor that supplies drive current to the light-emitting element LED. The second transistor T2 includes a gate electrode connected to the first transistor T1, a drain electrode connected to the high-potential power supply wiring VDD, and a source electrode connected to the light-emitting element LED. The second transistor T2 can control the drive current that flows to the light-emitting element LED when it is turned on. Therefore, the second transistor T2 that controls the drive current can be called a drive transistor.

[0050] The third transistor T3 is a transistor for compensating the threshold voltage of the second transistor T2. The third transistor T3 is connected between the source electrode of the second transistor T2 and the reference wiring RL. The third transistor T3 includes a gate electrode connected to the first scan wiring SL1, and source and drain electrodes connected to the source electrode of the second transistor T2 and the reference wiring RL, respectively. One of the source and drain electrodes of the third transistor T3 is connected to the node between the second drive transistor T2 and the light-emitting element LED, and the other of the source and drain electrodes of the third transistor T3 is connected to the reference wiring RL. The third transistor T3 can be turned on and transmit a reference voltage to the source electrode of the second transistor T2 to sense the threshold voltage of the second transistor T2. Thus, the third transistor T3, which senses the characteristics of the second transistor T2, can be called a sensing transistor.

[0051] A storage capacitor Cst can store the potential difference between the gate electrode and source electrode of the second transistor T2 while the light-emitting element LED is emitting light, thereby supplying a constant current to the light-emitting element LED. The storage capacitor Cst includes multiple capacitor electrodes. Some electrodes of the storage capacitor Cst may be connected to the gate electrode of the second transistor T2, and the remaining electrodes may be connected to the source electrode of the second transistor T2.

[0052] One or more light-emitting elements (LEDs) are arranged in each sub-pixel SP. Multiple light-emitting elements (LEDs) are elements that emit light in response to electric current. The light-emitting elements (LEDs) can include those that emit red light, green light, blue light, etc., and a variety of hues of light, including white, can be realized by combining these elements. Furthermore, a variety of hues of light can also be realized by using light-emitting elements that emit light of a specific hue and a light conversion member that converts the light from the light-emitting elements (LEDs) into light of other hues. The light-emitting elements (LEDs) are connected between the second transistor T2 and the low-potential power supply wiring VSS, and can emit light by receiving a drive current from the second transistor T2.

[0053] On the other hand, multiple light-emitting LEDs arranged in a single subpixel SP can be connected in parallel. For example, one electrode of each of the multiple light-emitting LEDs can be connected to the source electrode of the same second transistor T2, while the other electrodes can be connected to the same low-potential power supply wiring VSS.

[0054] A touch unit TU may be arranged on the display panel PN together with multiple subpixels SP. The touch unit TU may be arranged adjacent to the multiple subpixels SP. As described above, the touch unit TU is configured as an in-cell type built into the display panel PN, thereby allowing the multiple subpixels SP inside the display panel PN and the touch unit TU to be arranged adjacent to each other. The touch unit TU includes a touch sensing transistor ST and a touch capacitor Cf.

[0055] The touch sensing transistor ST can be turned on to transmit the voltage of the touch electrode TE to the touch sensing wiring Sen. The touch sensing transistor ST can be connected between the touch sensing wiring Sen and the touch electrode TE. Furthermore, the touch sensing transistor ST can be connected to a scan wiring SL that is different from the transistors T1 and T3 of the sub-pixel SP, and can be turned on independently. The touch sensing transistor ST includes a gate electrode connected to the second scan wiring SL2, a source electrode connected to the touch sensing wiring Sen, and a drain electrode connected between the touch electrode TE. The touch sensing transistor ST can be turned on by the scan signal SCAN of the second scan wiring SL2 and transmit a touch drive signal to the touch electrode TE. The touch drive unit TD can then sense the voltage fluctuated by the touch capacitor Cf formed between the touch electrode TE and the external input FNG through the touch sensing transistor ST and the touch sensing wiring Sen. Therefore, the touch drive unit TD can sense touch input by detecting a change in capacitance of the touch electrode TE, for example, a change in voltage, through the touch sensing wiring Sen, and can sense touch coordinates based on the touch sensing wiring Sen and the second scan wiring SL2.

[0056] The touch capacitor Cf is a capacitor formed between the touch electrode TE and the external input FNG. The voltage between the touch electrode TE and the external input FNG changes according to the external input FNG and can be stored in the touch capacitor Cf. The charge stored in the touch capacitor Cf can vary depending on the presence or absence of the external input FNG and the distance between the external input FNG and the touch electrode TE, and the touch drive unit TD can detect the charge change to sense the touch input and touch coordinates.

[0057] On the other hand, while Figure 2 shows a configuration where one touch area TU is adjacent to one subpixel SP, the configuration is not limited to one touch area TU being adjacent to multiple subpixel SPs.

[0058] In the following, an example of the structure of the display panel PN of the display device 100 according to one embodiment of this specification will be described in detail with reference to Figures 3 to 6.

[0059] Figure 3 is an enlarged plan view of the display panel of a display device according to one embodiment of this specification. Figure 4 is a cross-sectional view along lines A-A' and B-B' in Figure 3. Figure 5 is a cross-sectional view along lines A-A' and C-C' in Figure 3. Figure 6 is a cross-sectional view along line D-D' in Figure 3. Specifically, Figures 4 and 5 are cross-sectional views of a plurality of subpixels SP. Figure 6 is a cross-sectional view of the touch area TU.

[0060] Referring to Figure 3, multiple subpixels SP are arranged on the display panel PN, and a touch area TU is arranged adjacent to the multiple subpixels SP. The multiple subpixels SP may be arranged in multiple rows and multiple columns, and the touch area TU may also be arranged in multiple rows and multiple columns. The row on which the touch area TU is located may be located between rows on which multiple subpixels SP are located. For example, the multiple subpixels SP and the touch area TU may be arranged alternately in the column direction. A single touch area TU may have a width corresponding to one or more subpixels SP. For example, a single touch area TU may be located in one side region of the first subpixel SP1, the second subpixel SP2, and the third subpixel SP3 in the column direction. A single touch area TU may have a width corresponding to three subpixels SP. However, the design of the touch area TU and subpixels SP shown in Figure 3 is illustrative, and the arrangement and area of ​​the touch area TU and subpixels SP can be designed in a variety of ways and are not limited thereto.

[0061] Referring to Figures 3 to 5, the multiple subpixels SP include a first subpixel SP1, a second subpixel SP2, and a third subpixel SP3. Each of the first subpixel SP1, second subpixel SP2, and third subpixel SP3 includes a light-emitting element LED and circuitry and can emit light independently. For example, the first subpixel SP1 may be a red subpixel SP, the second subpixel SP2 may be a green subpixel SP, and the third subpixel SP3 may be a blue subpixel SP, but is not limited to these.

[0062] The display panel PN includes a substrate 110, a buffer layer 111, a gate insulating layer 112, an interlayer insulating layer 113, a first passivation layer 114, a first planarization layer 115, a second passivation layer 116, a third passivation layer 117, an adhesive layer 119, and a second planarization layer 118.

[0063] First, the substrate 110 is a structure for supporting the various components included in the display device 100, and may be made of an insulating material. For example, the substrate 110 may be made of glass or resin. Furthermore, the substrate 110 may contain polymers or plastics, and may be made of a flexible material.

[0064] A high-potential power supply wiring VDD, multiple data wirings DL, a reference wiring RL, a light-shielding layer LS, and a first capacitor electrode SC1 are arranged on the substrate 110.

[0065] The high-potential power supply wiring VDD is wiring that transmits a high-potential power supply voltage to each of the multiple sub-pixels SP. Multiple high-potential power supply wirings VDD can transmit the high-potential power supply voltage to the second transistor T2 of each of the multiple sub-pixels SP. The high-potential power supply wiring VDD can extend along the column direction between the multiple sub-pixels SP. For example, the high-potential power supply wiring VDD can be arranged along the column direction between the first sub-pixel SP1 and the third sub-pixel SP3. The high-potential power supply wiring VDD can then be electrically connected to the drain electrode of the second transistor T2 of each of the multiple sub-pixels SP arranged in the row direction via an auxiliary high-potential power supply wiring VDDA, which will be described later.

[0066] Multiple data paths DL are paths that transmit a data voltage Vdata to each of multiple sub-pixels SP. Multiple data paths DL can be connected to the first transistor T1 of each of the multiple sub-pixels SP. Multiple data paths DL can extend along the column direction between the multiple sub-pixels SP. For example, a data path DL extending along the column direction between the first sub-pixel SP1 and the high-potential power supply path VDD can transmit the data voltage Vdata to the first sub-pixel SP1, a data path DL placed between the first sub-pixel SP1 and the second sub-pixel SP2 can transmit the data voltage Vdata to the second sub-pixel SP2, and a data path DL placed between the third sub-pixel SP3 and the high-potential power supply path VDD can transmit the data voltage Vdata to the third sub-pixel SP3.

[0067] The reference wiring RL is a wiring that transmits a reference voltage to each of the multiple subpixels SP. The reference wiring RL can be connected to the third transistor T3 of each of the multiple subpixels SP. The reference wiring RL can extend along the column direction between the multiple subpixels SP. For example, the reference wiring RL can extend along the column direction between the second subpixel SP2 and the third subpixel SP3. The third drain electrode DE3 of the third transistor T3 of the first subpixel SP1, second subpixel SP2, and third subpixel SP3 adjacent to the reference wiring RL can extend along the row direction and be electrically connected to the reference wiring RL.

[0068] A light-shielding layer LS is placed on the substrate 110 for each of the multiple subpixels SP. The light-shielding layer LS can block light incident on the transistor below the substrate 110, thereby minimizing leakage current. For example, the light-shielding layer LS can block light incident on the second active layer ACT2 of the second transistor T2, which is a driving transistor.

[0069] A first capacitor electrode SC1 is placed on the substrate 110 for each of the multiple subpixels SP. The first capacitor electrode SC1 can form a storage capacitor Cst together with other capacitor electrodes. The first capacitor electrode SC1 can be formed integrally with the light-shielding layer LS.

[0070] A buffer layer 111 is placed on the high-potential power supply wiring VDD, multiple data wiring DL, reference wiring RL, light-shielding layer LS, and first capacitor electrode SC1. The buffer layer 111 can reduce the penetration of moisture or impurities through the substrate 110. The buffer layer 111 may, but is not limited to, a single or multi-layer structure of silicon oxide (SiOx) or silicon nitride (SiNx). However, the buffer layer 111 may, but is not limited to, be omitted depending on the type of substrate 110 or the type of transistor.

[0071] For each of the multiple subpixels SP, a first transistor T1, a second transistor T2, and a third transistor T3 are arranged on the buffer layer 111.

[0072] First, a first transistor T1 is placed in each of the multiple subpixels SP. The first transistor T1 includes a first active layer ACT1, a first gate electrode GE1, a first source electrode SE1, and a first drain electrode DE1.

[0073] A first active layer ACT1 is placed on the buffer layer 111. The first active layer ACT1 may, but is not limited to, a semiconductor material such as an oxide semiconductor, amorphous silicon, or polysilicon.

[0074] A gate insulating layer 112 is disposed on the first active layer ACT1. The gate insulating layer 112 is an insulating layer for insulating the first active layer ACT1 from the first gate electrode GE1, and may, but is not limited to, a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx).

[0075] A first gate electrode GE1 is positioned on the gate insulating layer 112. The first gate electrode GE1 can be electrically connected to the first scan wiring SL1. The first gate electrode GE1 may be, but is not limited to, a conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0076] An interlayer insulating layer 113 is placed on the first gate electrode GE1. Contact holes are formed in the interlayer insulating layer 113 for the first source electrode SE1 and the first drain electrode DE1 to connect to the first active layer ACT1, respectively. The interlayer insulating layer 113 is an insulating layer for protecting the structure below the interlayer insulating layer 113 and may, but is not limited to, a single or multiple layer of silicon oxide (SiOx) or silicon nitride (SiNx).

[0077] A first source electrode SE1 and a first drain electrode DE1 are arranged on the interlayer insulating layer 113, electrically connected to the first active layer ACT1. The first drain electrode DE1 may be connected to the data wiring DL and the first active layer ACT1, and the first source electrode SE1 may be connected to the first active layer ACT1 and the second gate electrode GE2 of the second transistor T2. The first source electrode SE1 and the first drain electrode DE1 may be composed of a conductive material, such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but are not limited thereto.

[0078] A second transistor T2 is placed in each of the multiple subpixels SP. The second transistor T2 includes a second active layer ACT2, a second gate electrode GE2, a second source electrode SE2, and a second drain electrode DE2.

[0079] A second active layer ACT2 is placed on the buffer layer 111. The second active layer ACT2 may, but is not limited to, a semiconductor material such as an oxide semiconductor, amorphous silicon, or polysilicon.

[0080] A gate insulating layer 112 is placed on the second active layer ACT2, and a second gate electrode GE2 is placed on the gate insulating layer 112. The second gate electrode GE2 can be electrically connected to the first source electrode SE1 of the first transistor T1. The second gate electrode GE2 may be composed of a conductive material, such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0081] An interlayer insulating layer 113 is disposed on the second gate electrode GE2, and a second source electrode SE2 and a second drain electrode DE2 are disposed on the interlayer insulating layer 113, which are electrically connected to the second active layer ACT2. The second drain electrode DE2 may be electrically connected to the second active layer ACT2 and the high-potential power supply wiring VDD, and the second source electrode SE2 may be electrically connected to the second active layer ACT2 and the light-emitting element LED. The second source electrode SE2 and the second drain electrode DE2 may be composed of a conductive material, such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but are not limited thereto.

[0082] A third transistor T3 is placed in each of the multiple subpixels SP. The third transistor T3 includes a third active layer ACT3, a third gate electrode GE3, a third source electrode SE3, and a third drain electrode DE3.

[0083] A third active layer ACT3 is placed on the buffer layer 111. The third active layer ACT3 may, but is not limited to, a semiconductor material such as an oxide semiconductor, amorphous silicon, or polysilicon.

[0084] A gate insulating layer 112 is placed on the third active layer ACT3, and a third gate electrode GE3 is placed on the gate insulating layer 112. The third gate electrode GE3 can be electrically connected to the first scan wiring SL1. The third gate electrode GE3 may be composed of a conductive material, such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0085] An interlayer insulating layer 113 is disposed on the third gate electrode GE3, and a third source electrode SE3 and a third drain electrode DE3 are disposed on the interlayer insulating layer 113, which are electrically connected to the third active layer ACT3. The third drain electrode DE3 may be electrically connected to the third active layer ACT3 and the reference wiring RL, and the third source electrode SE3 may be electrically connected to the third active layer ACT3 and the second source electrode SE2 of the second transistor T2. The third source electrode SE3 and the third drain electrode DE3 may be composed of a conductive material, such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but are not limited thereto.

[0086] A second capacitor electrode SC2 is placed on the gate insulating layer 112. The second capacitor electrode SC2 is one of the electrodes forming the storage capacitor Cst and may be placed superimposed on the first capacitor electrode SC1. The second capacitor electrode SC2 may be formed integrally with the second gate electrode GE2 of the second transistor T2 and may be electrically connected to the second gate electrode GE2. The first capacitor electrode SC1 and the second capacitor electrode SC2 may be placed separated from each other by the buffer layer 111 and the gate insulating layer 112.

[0087] Next, a plurality of scan wirings SL, including the first scan wiring SL1 and the second scan wiring SL2, an auxiliary high-potential power supply wiring VDDA, and a third capacitor electrode SC3 are arranged on the interlayer insulating layer 113.

[0088] The first scan wiring SL1 and the second scan wiring SL2 are wirings that transmit a scan signal SCAN to each of the multiple sub-pixels SP. The first scan wiring SL1 may extend in the row direction across the multiple sub-pixels SP. The second scan wiring SL2 may extend in the row direction across the touch area TU. The first scan wiring SL1 may be electrically connected to the first gate electrode GE1 of the first transistor T1 and the third gate electrode GE3 of the third transistor T3 of each of the multiple sub-pixels SP. The second scan wiring SL2 may be electrically connected to the sensing gate electrode GES of the touch sensing transistor ST of the touch area TU.

[0089] An auxiliary high-potential power supply wiring VDDA is placed on the interlayer insulating layer 113. The auxiliary high-potential power supply wiring VDDA may extend in the row direction and be arranged across multiple sub-pixels SP. The auxiliary high-potential power supply wiring VDDA can electrically connect the high-potential power supply wiring VDD extending in the column direction to the second drain electrode DE2 of the second transistor T2 of each of the multiple sub-pixels SP arranged along the row direction.

[0090] A third capacitor electrode SC3 is placed on the interlayer insulating layer 113. The third capacitor electrode SC3 is an electrode that forms a storage capacitor Cst and can be placed superimposed on the first capacitor electrode SC1 and the second capacitor. The third capacitor electrode SC3 is formed integrally with the second source electrode SE2 of the second transistor T2 and can be electrically connected to the second source electrode SE2. The second source electrode SE2 can also be electrically connected to the first capacitor electrode SC1 through contact holes formed in the interlayer insulating layer 113 and the buffer layer 111. Thus, the first capacitor electrode SC1 and the third capacitor electrode SC3 can be electrically connected to the second source electrode SE2 of the second transistor T2.

[0091] Accordingly, the storage capacitor Cst includes a first capacitor electrode SC1 formed on the substrate 110 and connected to the second source electrode SE2, a second capacitor electrode SC2 formed on the buffer layer 111 and gate insulating layer 112 and connected to the second gate electrode GE2, and a third capacitor electrode SC3 formed on the interlayer insulating layer 113 and connected to the second source electrode SE2, and can store the voltage between the second gate electrode GE2 and the second source electrode SE2 of the second transistor T2.

[0092] A first passivation layer 114 is placed on the first transistor T1, the second transistor T2, the third transistor T3, and the storage capacitor Cst. The first passivation layer 114 is an insulating layer for protecting the underlying structure and may, but is not limited to, a single or multiple layer of silicon oxide (SiOx) or silicon nitride (SiNx).

[0093] A first planarization layer 115 is placed on a first passivation layer 114. The first planarization layer 115 can planarize the upper part of the substrate 110 on which multiple transistors T1, T2, T3, ST and storage capacitor Cst are arranged. The first planarization layer 115 may consist of a single layer or multiple layers, and may, for example, be made of a photoresist or an acrylic-based organic material, but is not limited thereto.

[0094] A second passivation layer 116 is placed on the first planarization layer 115. The second passivation layer 116 is an insulating layer for protecting the structure below the second passivation layer 116 and may consist of a single or multiple layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0095] Connecting electrodes 120, multiple low-potential power supply wirings VSS, and touch sensing wirings Sen are arranged on the second passivation layer 116.

[0096] First, a connecting electrode 120 is placed on each of the multiple subpixels SP. The connecting electrode 120 is an electrode that electrically connects the second transistor T2 and the pixel electrode PE. The connecting electrode 120 can be electrically connected to the second source electrode SE2, which is the third capacitor electrode SC3, through contact holes formed in the second passivation layer 116, the first planarization layer 115, and the first passivation layer 114.

[0097] The connecting electrode 120 may have a multilayer structure consisting of a first connecting layer 120a and a second connecting layer 120b. The first connecting layer 120a is placed on the second passivation layer 116, and the second connecting layer 120b is placed over the first connecting layer 120a. The second connecting layer 120b may be placed so as to completely surround the top and sides of the first connecting layer 120a. The second connecting layer 120b is made of a material that is more corrosion-resistant than the first connecting layer 120a, so that short-circuit failures due to migration between the first connecting layer 120a and adjacent wiring can be minimized during the manufacture of the display device 100. For example, the first connecting layer 120a may be made of a conductive material such as copper (Cu) and chromium (Cr), and the second connecting layer 120b may be made of molybdenum (Mo), molybdenum titanium (MoTi), etc., but is not limited thereto.

[0098] Multiple low-potential power supply wirings (VSS) are arranged on the second passivation layer 116. These multiple low-potential power supply wirings (VSS) are wirings that transmit a low-potential power supply voltage to the light-emitting element (LED). The multiple low-potential power supply wirings (VSS) may extend in the column direction at each of the multiple sub-pixels (SP). For example, one low-potential power supply wiring (VSS) may be arranged at the first sub-pixel SP1, and a pair of low-potential power supply wirings (VSS) may be arranged at the second sub-pixel SP2 and the third sub-pixel SP3, spaced apart from each other at a certain interval.

[0099] Each of the multiple low-potential power supply wirings VSS includes a first conductive layer VSSa and a first cladding layer VSSb. The first conductive layer VSSa is placed on a second passivation layer 116, and the first cladding layer VSSb is placed on the first conductive layer VSSa, covering the entire top and sides of the first conductive layer VSSa. For example, the first conductive layer VSSa may consist of conductive materials such as copper (Cu) and chromium (Cr). The first cladding layer VSSb may consist of a material that is more corrosion-resistant than the first conductive layer VSSa, such as molybdenum (Mo) or molybdenum titanium (MoTi), but is not limited to these.

[0100] A touch sensing trace Sen is placed on the second passivation layer 116. The touch sensing trace Sen is a trace that is connected to a touch sensing transistor ST to transmit a touch drive signal and to detect changes in the capacitance of a touch capacitor Cf. The touch sensing trace Sen may extend in the column direction in any one of several subpixels SP. For example, the touch sensing trace Sen may extend in the column direction in the first subpixel SP1 at a constant distance from the low-potential power supply trace VSS.

[0101] The touch sensing wiring Sen includes a second conductive layer Sena and a second cladding layer Senb. The second conductive layer Sena is placed on a second passivation layer 116, and the second cladding layer Senb is placed on the second conductive layer Sena, covering the entire top and sides of the second conductive layer Sena. For example, the second conductive layer Sena may consist of conductive materials such as copper (Cu) and chromium (Cr). The second cladding layer Senb may consist of a material that is more corrosion-resistant than the second conductive layer Sena, such as molybdenum (Mo) or titanium molybdenum (MoTi), but is not limited to these.

[0102] A third passivation layer 117 is placed on the connecting electrode 120, the low-potential power supply wiring VSS, and the touch sensing wiring Sen. The third passivation layer 117 is an insulating layer for protecting the underlying structure and may, but is not limited to, a single or multiple layer of silicon oxide (SiOx) or silicon nitride (SiNx).

[0103] Next, light-emitting element LEDs are placed on the third passivation layer 117. The light-emitting element LEDs include a first light-emitting element 130 and a second light-emitting element 140. For example, the first light-emitting element 130 may be placed on the first subpixel SP1 among a plurality of subpixels SP, and the second light-emitting element 140 may be placed on the second subpixel SP2 and the third subpixel SP3 among a plurality of subpixels SP. However, the type of light-emitting element LED is illustrative, and only one of the first light-emitting element 130 or the second light-emitting element 140 may be used as the light-emitting element LED, or other types of light-emitting element LEDs may be used, and are not limited thereto. Also, in Figures 4 and 5, for the sake of explanation, it is shown that one light-emitting element LED is placed on each of the plurality of subpixels SP, but multiple light-emitting element LEDs may be placed on each of the plurality of subpixels SP, and are not limited thereto.

[0104] Referring to Figure 4, among the multiple light-emitting LEDs, the first light-emitting element 130 includes a first semiconductor layer 131, a light-emitting layer 132, a second semiconductor layer 133, a first electrode 134, a second electrode 135, and a sealing layer 136.

[0105] A first semiconductor layer 131 is placed on a third passivation layer 117, and a second semiconductor layer 133 is placed on the first semiconductor layer 131. The first semiconductor layer 131 and the second semiconductor layer 133 may be layers formed by doping specific materials with n-type and p-type impurities. For example, the first semiconductor layer 131 and the second semiconductor layer 133 may be layers doped with p-type or n-type impurities in materials such as gallium nitride (GaN), indium aluminum phosphide (InAlP), gallium arsenide (GaAs), etc. The p-type impurity material used here may be any of magnesium (Mg), zinc (Zn), beryllium (Be), etc., and the n-type impurity material used here may be any of silicon (Si), germanium (Ge), tin (Sn), etc., but is not limited to these.

[0106] A portion of the first semiconductor layer 131 may be positioned to protrude outside the second semiconductor layer 133. The upper surface of the first semiconductor layer 131 may consist of a portion that overlaps with the lower surface of the second semiconductor layer 133 and a portion positioned outside the lower surface of the second semiconductor layer 133. However, the size and shape of the first semiconductor layer 131 and the second semiconductor layer 133 can be varied and are not limited thereto.

[0107] A light-emitting layer 132 is disposed between a first semiconductor layer 131 and a second semiconductor layer 133. The light-emitting layer 132 can emit light by receiving holes and electrons from the first semiconductor layer 131 and the second semiconductor layer 133. The light-emitting layer 132 can be a single layer or a multi-quantum well (MQW) structure, and may be made of, for example, indium gallium nitride (InGaN) or gallium nitride (GaN), but is not limited thereto.

[0108] A first electrode 134 is positioned to surround the bottom and sides of the first semiconductor layer 131. The first electrode 134 is an electrode for electrically connecting the first light-emitting element 130 and the low-potential power supply wiring VSS. The first electrode 134 may be made of a conductive material, such as a transparent conductive material like ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), or an opaque conductive material like titanium (Ti), gold (Au), silver (Ag), copper (Cu), or alloys thereof, but is not limited thereto.

[0109] A second electrode 135 is placed on the upper surface of the second semiconductor layer 133. The second electrode 135 is an electrode that electrically connects the pixel electrode PE (described later) and the second semiconductor layer 133. The second electrode 135 may be made of a conductive material, such as a transparent conductive material like ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), but is not limited thereto.

[0110] A sealing layer 136 is provided that surrounds at least a portion of the first semiconductor layer 131, the light-emitting layer 132, the second semiconductor layer 133, the first electrode 134, and the second electrode 135. The sealing layer 136 is made of an insulating material and can protect the first semiconductor layer 131, the light-emitting layer 132, and the second semiconductor layer 133. The sealing layer 136 may be provided to cover the light-emitting layer 132, a portion of the side surface of the first semiconductor layer 131 adjacent to the light-emitting layer 132, and a portion of the side surface of the second semiconductor layer 133 adjacent to the light-emitting layer 132. The first electrode 134 and the second electrode 135 may be exposed from the sealing layer 136, and the contact electrode CE and pixel electrode PE that are formed thereafter can be electrically connected to the first electrode 134 and the second electrode 135.

[0111] Referring to Figure 5, the second light-emitting element 140 includes a first semiconductor layer 141, an emissive layer 142, a second semiconductor layer 143, a first electrode 144, a second electrode 145, and a sealing layer 146. The first semiconductor layer 141, emissive layer 142, second semiconductor layer 143, second electrode 145, and sealing layer 146 of the second light-emitting element 140 may be substantially identical to the first semiconductor layer 131, emissive layer 132, second semiconductor layer 133, second electrode 135, and sealing layer 136 of the first light-emitting element 130. However, the second light-emitting element 140 differs from the first light-emitting element 130 only in the structure of the first electrode 144; the other components are substantially identical.

[0112] The first electrode 144 of the second light-emitting element 140 is positioned to contact only the lower surface of the first semiconductor layer 141. Compared to the first light-emitting element 130, where the first electrode 134 covers both the lower and side surfaces of the first semiconductor layer 131, in the second light-emitting element 140, the first electrode 144 is positioned only on the lower surface of the first semiconductor layer 141, so the side surface of the first semiconductor layer 141 of the second light-emitting element 140 can be exposed from the first electrode 144. Therefore, the contact electrode CE can be electrically connected to the second light-emitting element 140 by contacting the side surface of the first semiconductor layer 141 and the side surface of the first electrode 144.

[0113] On the other hand, the light-emitting element LED can be transferred onto the substrate 110 in various ways. For example, the light-emitting element LED can be directly self-assembled on the substrate 110 by arranging multiple assembly wirings that form an electric field on the substrate 110. In this case, when manufacturing the display device 100, in the first subpixel SP1, a low-potential power supply wiring VSS and a touch sensing wiring Sen, spaced apart from each other at a certain interval, may be used as assembly wiring, and in the second subpixel SP2 and third subpixel SP3, a pair of low-potential power supply wiring VSS, spaced apart from each other at a certain interval, may be used as assembly wiring.

[0114] Specifically, during the manufacturing of the display device 100, the light-emitting element LED can be self-assembled with the low-potential power supply wiring VSS and touch-sensing wiring Sen, which function as multiple assembly wirings, and a third passivation layer 117 covering the top of them already formed. The substrate 110 with the third passivation layer 117 formed and the light-emitting element LED can be placed in a chamber where a fluid is formed, and an AC voltage can be applied to the assembly wiring to form an electric field. Such an electric field can dielectrically polarize the light-emitting element LED and give it polarity. The dielectrically polarized light-emitting element LED can be moved by dielectrophoresis (DEP) to a predetermined position (i.e., a predetermined position within each subpixel) that is fixed by an electric field formed, for example, by an AC voltage. Therefore, multiple light-emitting element LEDs can be fixed in the region between a pair of assembly wirings using dielectrophoresis. For example, in the first subpixel SP1, the light-emitting element LED can be self-assembled in the region between the touch-sensing wiring Sen and the low-potential power supply wiring VSS, and in the second subpixel SP2 and third subpixel SP3, the light-emitting element LED can be self-assembled in the region between a pair of low-potential power supply wiring VSS. Therefore, when using the self-assembly method as described above, the process of precisely aligning the light-emitting LEDs can be omitted, making it easier to transfer the light-emitting LEDs onto the substrate 110.

[0115] On the other hand, during the manufacturing process of the display device 100, the light-emitting element LEDs can be self-assembled with an organic layer having openings formed on the third passivation layer 117. The openings in the organic layer can correspond to the areas where the light-emitting element LEDs are to be self-assembled. Therefore, within the region between the multiple low-potential power supply wirings VSS and touch sensing wirings Sen arranged along the column direction, the light-emitting element LEDs can be self-assembled only in the openings of the organic layer. Once the self-assembly of the light-emitting element LEDs is complete, such organic layer can be removed, and other components such as the second planarization layer 118 and pixel electrodes PE can be formed.

[0116] On the other hand, although this specification has described that the touch sensing wiring Sen can be used as assembly wiring together with the low-potential power supply wiring VSS, separate assembly wiring may be placed and the touch sensing wiring Sen may be placed on other layers. For example, separate assembly wiring may be placed instead of the touch sensing wiring Sen, and the touch sensing wiring Sen may be placed on any one of the upper layers of the substrate 110, buffer layer 111, gate insulation layer 112, interlayer insulation layer 113, first passivation layer 114, first planarization layer 115, or second passivation layer 116. For example, the touch sensing wiring Sen may extend in the column direction on the gate insulation layer 112 and be electrically connected to the touch sensing transistors ST of multiple touch portions TU.

[0117] Furthermore, the light-emitting LED may be placed on the substrate 110 using a transfer method that utilizes a temporary substrate with multiple assembly wirings formed on it, in addition to the self-assembly method described above. For example, after self-assembling the light-emitting LED on a temporary substrate 110 with multiple assembly wirings formed on it, the temporary substrate can be positioned above the substrate 110 to transfer the self-assembled light-emitting LED from the temporary substrate to the substrate 110. Multiple assembly wirings that form an electric field may be formed on the temporary substrate, and the light-emitting LED can be self-assembled on the temporary substrate by the electric field of the assembly wiring. Then, with the temporary substrate positioned facing the substrate 110, the light-emitting LED can be transferred from the temporary substrate to the substrate 110 by irradiating the temporary substrate with a laser or the like.

[0118] Next, referring to Figures 4 and 5, an adhesive layer 119 is placed between the light-emitting element LED and the third passivation layer 117. The adhesive layer 119 may be an organic film that temporarily fixes the light-emitting element LED during the self-assembly process of the light-emitting element LED. When the display device 100 is manufactured, if an organic film is formed to cover the light-emitting element LED, a portion of the organic film fills the space between the light-emitting element LED and the third passivation layer 117, temporarily fixing the light-emitting element LED on the third passivation layer 117. Subsequently, even if the organic film is removed, a portion of the organic film that has seeped into the bottom of the light-emitting element LED remains and can become the adhesive layer 119. The adhesive layer 119 may be made of an organic material, such as a photoresist or an acrylic-based organic material, but is not limited to these.

[0119] A contact electrode CE is positioned on the side surface of the light-emitting element LED. The contact electrode CE is an electrode for electrically connecting the light-emitting element LED to the low-potential power supply wiring VSS. The contact electrode CE can be electrically connected to the low-potential power supply wiring VSS through a contact hole formed in the third passivation layer 117. The contact electrode CE is positioned to surround at least a portion of the side surfaces of the first semiconductor layers 131, 141 and the first electrodes 134, 144 of the light-emitting element LED, thereby electrically connecting the first semiconductor layers 131, 141 and the first electrodes 134, 144 to the low-potential power supply wiring VSS.

[0120] In this case, referring to Figure 4, no contact holes are formed in the third passivation layer 117 covering the touch sensing wiring Sen, thus preventing the light-emitting element LED and the touch sensing wiring Sen from being connected.

[0121] On the other hand, Figure 4 shows that the contact electrode CE is formed on the contact hole of the third passivation layer 117 where the low-potential power supply wiring VSS is exposed, and is positioned to cover only a portion of the first light-emitting element 130 adjacent to the contact hole. However, the contact electrode CE may also be positioned to surround the entire lower side surface of the first light-emitting element 130, and is not limited to this.

[0122] Next, a second planarization layer 118 is placed on the light-emitting element LED and the contact electrode CE. The second planarization layer 118 can planarize the upper part of the substrate 110 on which the light-emitting element LED is placed, and together with the adhesive layer 119, can fix the light-emitting element LED on the substrate 110. The second planarization layer 118 may be a single layer or multiple layers, and may, for example, be made of a photoresist or an acrylic-based organic material, but is not limited thereto.

[0123] A pixel electrode PE is placed on the second planarization layer 118. The pixel electrode PE is an electrode for electrically connecting a plurality of light-emitting elements (LEDs) and a connecting electrode 120. The pixel electrode PE can be electrically connected to the light-emitting elements (LEDs), the connecting electrode 120, and the second transistor T2 through contact holes formed in the second planarization layer 118. Therefore, the second electrodes 135 and 145 of the light-emitting elements (LEDs), the connecting electrode 120, and the second source electrode SE2 of the second transistor T2 can be electrically connected to each other through the pixel electrode PE. The pixel electrode PE may be composed of a conductive material, such as a transparent conductive material like ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), but is not limited thereto.

[0124] Referring to both Figures 3 and 6, the touch section TU includes a touch sensing transistor ST, an auxiliary drain electrode DESA, a touch sensing wiring Sen, and a touch electrode TE.

[0125] A touch sensing transistor ST is arranged on the substrate 110 and the buffer layer 111. The touch sensing transistor ST includes a sensing active layer ACTS, a sensing gate electrode GES, a sensing source electrode SES, and a sensing drain electrode DES.

[0126] A sensing active layer ACTS is placed on the buffer layer 111. The sensing active layer ACTS may, but is not limited to, a semiconductor material such as an oxide semiconductor, amorphous silicon, or polysilicon.

[0127] A gate insulating layer 112 is placed on the sensing active layer ACTS, and a sensing gate electrode GES is placed on the gate insulating layer 112. The sensing gate electrode GES can be electrically connected to the second scan wiring SL2. The sensing gate electrode GES may be composed of a conductive material, such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0128] An interlayer insulating layer 113 is disposed on the sensing gate electrode GES, and a sensing source electrode SES and a sensing drain electrode DES are disposed on the interlayer insulating layer 113, which are electrically connected to the sensing active layer ACTS. The sensing drain electrode DES may be electrically connected to the sensing active layer ACTS and the touch electrode TE, and the sensing source electrode SES may be electrically connected to the sensing active layer ACTS and the touch sensing wiring Sen. The sensing source electrode SES and the sensing drain electrode DES may be composed of a conductive material, such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but are not limited thereto.

[0129] On the other hand, an auxiliary drain electrode DESA may be further arranged to electrically connect the sensing drain electrode DES and the touch electrode TE. The auxiliary drain electrode DESA includes a first auxiliary drain electrode DESA1, a second auxiliary drain electrode DESA2, and a third auxiliary drain electrode DESA3.

[0130] A first auxiliary drain electrode DESA1 is placed on the buffer layer 111 and the gate insulating layer 112. The first auxiliary drain electrode DESA1 can be electrically connected to the sensing drain electrode DES through a contact hole formed in the interlayer insulating layer 113.

[0131] A second auxiliary drain electrode DESA2 is placed on the interlayer insulating layer 113. The second auxiliary drain electrode DESA2 can be electrically connected to the first auxiliary drain electrode DESA1 through a contact hole formed in the interlayer insulating layer 113.

[0132] A third auxiliary drain electrode DESA3 is placed on the second passivation layer 116. The third auxiliary drain electrode DESA3 can be electrically connected to the second auxiliary drain electrode DESA2 through contact holes formed in the second passivation layer 116, the first planarization layer 115, and the first passivation layer 114. The third auxiliary drain electrode DESA3 includes a first drain electrode layer DESA3a and a second drain electrode layer DESA3b. The first drain electrode layer DESA3a is placed on the second passivation layer 116, and the second drain electrode layer DESA3b is placed on the first drain electrode layer DESA3a, covering the first drain electrode layer DESA3a. For example, the first drain electrode layer DESA3a may be made of a conductive material such as copper (Cu) and chromium (Cr). Furthermore, the second drain electrode layer DESA3b may be made of a material that is more resistant to corrosion than the first drain electrode layer DESA3a, such as molybdenum (Mo) or titanium molybdenum (MoTi), but is not limited to these materials.

[0133] A touch sensing trace Sen is placed on the second passivation layer 116. The touch sensing trace Sen may extend in the column direction at any one of several subpixels SP. For example, the touch sensing trace Sen may extend in the column direction at the first subpixel SP1 at a constant distance from the low-voltage power supply trace VSS.

[0134] The touch sensing wiring Sen includes a second conductive layer Sena and a second cladding layer Senb. The second conductive layer Sena is disposed on a second passivation layer 116, and the second cladding layer Senb is disposed on top of the second conductive layer Sena, covering the sides and top surface of the second conductive layer Sena. The second conductive layer Sena can be electrically connected to the sensing source electrode SES of the touch sensing transistor ST through contact holes formed in the second passivation layer 116, the first planarization layer 115, and the first passivation layer 114. For example, the second conductive layer Sena may consist of a conductive material such as copper (Cu) and chromium (Cr). The second cladding layer Senb may consist of a material more resistant to corrosion than the second conductive layer Sena, such as molybdenum (Mo) or titanium molybdenum (MoTi), but is not limited to these.

[0135] A touch electrode TE is placed on the second planarization layer 118. The touch electrode TE can be electrically connected to an auxiliary drain electrode DESA through contact holes formed in the second planarization layer 118 and the third passivation layer 117. Thus, the touch electrode TE can be electrically connected to a touch sensing transistor ST through the auxiliary drain electrode DESA. The touch electrode TE may be made of the same material and placed on the same layer as the pixel electrode PE. The touch electrode TE may be made of a conductive material, such as a transparent conductive material like ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), but is not limited thereto.

[0136] When an external input FNG is detected at the location of the touch electrode TE, the external input FNG and the touch electrode TE can form a touch capacitor Cf, and the capacitance of the touch electrode TE can be determined. Therefore, the touch drive unit TD can detect the presence or absence of the external input FNG and its coordinates based on the change in capacitance of the touch electrode TE of the touch unit TU.

[0137] On the other hand, since the touch unit TU and the sub-pixel SP are connected to and driven by different wiring, the touch unit TU and the sub-pixel SP can be driven independently. Therefore, the touch unit TU can be driven freely without separating the driving periods of the touch unit TU and the sub-pixel SP during a single frame period.

[0138] In the following sections, the display period and touch sensing period will be explained with reference to Figures 7 and 8.

[0139] In particular, Figure 7 is a timing diagram showing an example of signals input to the subpixels and touch area of ​​a display device according to one embodiment of this specification. Figure 8 is a graph showing an example of the voltage change amount of the touch area with and without external input in a display device according to one embodiment of this specification.

[0140] Referring to Figure 7, in the display device 100 according to one embodiment of this specification, since multiple sub-pixels SP and touch units TU are driven by different wiring, the sub-pixels SP and touch units TU can be driven simultaneously for the duration of one frame. For example, the sub-pixels SP are connected to the first scan wiring SL1, data wiring DL, reference wiring RL, high-potential power wiring VDD, and low-potential power wiring VSS, and the touch units TU are connected to the second scan wiring SL2 and touch sensing wiring Sen, so that the sub-pixels SP and touch units TU can be driven simultaneously. During the duration of one frame, the display period and the touch sensing period are not separately separated, and the touch units TU can be driven freely when the sub-pixels SP are driven.

[0141] During one frame, at the first time point t1, a scan signal SCAN is output to the first scan wiring SL1, allowing a data voltage Vdata to be input to the sub-pixel SP. At the first time point t1, the first transistor T1 is turned on by the high-level scan signal SCAN and can transmit the data voltage Vdata to the second gate electrode GE2. The second transistor T2 can then supply a drive current to the light-emitting element LED based on the data voltage Vdata input to the second gate electrode GE2.

[0142] Simultaneously with driving the sub-pixel SP, a touch drive signal can be continuously output to the touch sensing wiring Sen. During one frame period, the touch drive signal output to the touch sensing wiring Sen is supplied to the touch sensing transistor ST and the touch electrode TE, enabling them to sense the external input FNG. For example, the touch drive signal from the touch sensing wiring Sen can be transmitted to the touch electrode TE through the touch sensing transistor ST, which is turned on at the second time point t2.

[0143] Specifically, referring to Figure 8, the touch drive unit TD can sense the external input FNG based on the voltage change of the touch electrode TE sensed through the touch sensing wiring Sen. The touch drive signal can be transmitted to the touch electrode TE by the touch sensing transistor ST which is turned on at the second time point t2, and a touch capacitor Cf can be formed between the external input FNG and the touch electrode TE. The voltage change of the touch electrode TE sensed by the touch drive unit TD through the touch sensing wiring Sen can change depending on the capacitance of the touch capacitor Cf. For example, the amplitude of the voltage at the touch electrode TE may increase when the external input FNG is present compared to when it is not. Therefore, the peak voltage may change depending on the presence or absence of the external input FNG, and the external input FNG can be sensed based on the voltage change ΔV of such a peak voltage.

[0144] On the other hand, the touch units TU on the display panel PN are arranged in multiple rows, and these multiple rows can be divided into several groups, allowing touch sensing to be performed by sequentially driving each group. For example, during a certain period, touch units TU from row 1 to row n can be driven simultaneously to sense touches, and during the next period, touch units TU from row n+1 to row 2n can be driven simultaneously to sense touches. Therefore, by simultaneously driving the touch units TU on multiple rows, the touch sensing sensitivity can be improved.

[0145] Therefore, in the display device 100 according to one embodiment of this specification, a touch-sensing display device 100 can be provided by forming the touch portion TU at the same time as the sub-pixel SP. When forming the sub-pixel SP on the display panel PN, the touch portion TU can be realized by forming the configuration of the touch portion TU on the same layer as the configuration of the sub-pixel SP. Specifically, at least a portion of the touch sensing transistor ST can be formed together with the first transistor T1, second transistor T2, and third transistor T3 of the sub-pixel SP using the same material and on the same layer. The touch sensing wiring Sen can be formed together with the low-potential power supply wiring VSS using the same material and on the same layer. And in the case of the touch electrode TE, it can be formed on the same layer and on the same material as the pixel electrode PE. Therefore, in the display device 100 according to one embodiment of this specification, the touch portion TU can be formed inside the display panel PN without any additional steps, and a touch-sensing display device 100 can be easily realized.

[0146] In one embodiment of the display device 100 according to this specification, one of the assembly wirings for self-assembling the light-emitting element LEDs can be used as the touch sensing wiring Sen for the touch area TU, thereby realizing the touch area TU without adding any additional wiring. The light-emitting element LEDs can be transferred onto the substrate 110 in various ways, and among these, the self-assembly method using assembly wiring allows for easy self-assembly and alignment of the light-emitting element LEDs. The electric field formed by a pair of assembly wirings allows the light-emitting element LEDs to be self-assembled at a specific position, and after the manufacturing of the display device 100 is completed, the assembly wirings can be used as low-potential power supply wiring VSS to drive the display device 100. Then, one of the pair of assembly wirings arranged for each sub-pixel SP can be used as the low-potential power supply wiring VSS, and the other can be used as the touch sensing wiring Sen to drive both the sub-pixel SPs and the touch area TU. Therefore, in one embodiment of the display device 100 according to this specification, both the sub-pixel SPs and the touch area TU can be easily formed using assembly wirings.

[0147] In one embodiment of the display device 100 described herein, the touch unit TU and the sub-pixel SP can be driven independently. The touch unit TU is driven by being connected to a touch sensing wire Sen and a second scan wire SL2, while the sub-pixel SP can be driven by being connected to a first scan wire SL1, a data wire DL, a reference wire RL, a low-potential power supply wire VSS, and a high-potential power supply wire VDD. For example, the touch sensing transistor ST and touch capacitor Cf of the touch unit TU, and the first transistor T1, second transistor T2, third transistor T3, storage capacitor Cst, and light-emitting element LED of the sub-pixel SP can be driven by being connected to different wires. Therefore, the sub-pixel SP and the touch unit TU can be driven independently, or both can be driven simultaneously. For example, both the sub-pixel SP and the touch unit TU can be driven within a single frame period to display an image and simultaneously sense a touch. Accordingly, in one embodiment of the display device 100 described herein, the touch unit TU and the sub-pixel SP can be driven simultaneously by being connected to different wires.

[0148] Figure 9 is a circuit diagram of the subpixels and touch area of ​​a display device according to another embodiment of this specification. Figure 10 is an enlarged plan view of the display panel of a display device according to another embodiment of this specification. Figure 11 is a cross-sectional view along line D-D' in Figure 10. Figure 12 is a timing diagram showing an example of signals input to the subpixels and touch area of ​​a display device according to another embodiment of this specification. The display devices 900 in Figures 9 to 12 are substantially identical in configuration to the display devices 100 in Figures 1 to 10, except that they use a reference wiring RL instead of a touch sensing wiring Sen, so redundant explanations can be omitted or made concise.

[0149] Referring to Figure 9, the touch sensing transistor ST of the touch unit TU is connected to the reference wiring RL. The sensing source electrode SES and sensing drain electrode DES of the touch sensing transistor ST can be connected between the reference wiring RL and the touch electrode TE. Therefore, the reference wiring RL can be used when driving either the sub-pixel SP or the touch unit TU.

[0150] Referring to both Figure 10 and Figure 11, a reference wiring RL is placed on the substrate 110, and a buffer layer 111 is placed on the reference wiring RL. The sensing active layer ACTS of the touch sensing transistor ST is placed on the buffer layer 111, and the gate insulating layer 112 and the sensing gate electrode GES are placed on the sensing active layer ACTS and the buffer layer 111.

[0151] Then, an interlayer insulating layer 113 is placed on the sensing gate GES electrode, and the sensing source electrode SES and sensing drain electrode DES, and the auxiliary source electrode SESA and auxiliary drain electrode DESA of the touch sensing transistor ST are placed on the interlayer insulating layer 113.

[0152] The sensing source electrode SES can be electrically connected to the reference wiring RL through the auxiliary source electrode SESA. Specifically, the auxiliary source electrode SESA includes a first auxiliary source electrode SESA1 and a second auxiliary source electrode SESA2. The first auxiliary source electrode SESA1 is positioned between the gate insulating layer 112 and the interlayer insulating layer 113 and can be connected to the sensing source electrode SES through a contact hole formed in the interlayer insulating layer 113. The second auxiliary source electrode SESA2 is positioned on the interlayer insulating layer 113 and can be electrically connected to the first auxiliary source electrode SESA1 below the interlayer insulating layer 113 and to the reference wiring RL below the interlayer insulating layer 113 and the buffer layer 111. Thus, the sensing source electrode SES and the reference wiring RL can be electrically connected through the auxiliary source electrode SESA.

[0153] The sensing drain electrode DES can be electrically connected to the touch electrode TE through the auxiliary drain electrode DESA. The auxiliary drain electrode DESA is located on the second passivation layer 116 and includes a first drain electrode layer DESAa and a second drain electrode layer DESAb. The first drain electrode layer DESAa is located on the second passivation layer 116 and can be connected to the sensing drain electrode DES through contact holes formed in the second passivation layer 116, the first planarization layer 115, and the first passivation layer 114. The second drain electrode layer DESAb is located so as to cover the entire top and side surfaces of the first drain electrode layer DESAa and can be connected to the touch electrode TE through contact holes formed in the third passivation layer 117 and the second planarization layer 118. Thus, the sensing drain electrode DES and the touch electrode TE can be electrically connected through the auxiliary drain electrode DESA.

[0154] On the other hand, by having the third transistor T3 of the sub-pixel SP and the touch sensing transistor ST of the touch unit TU share a single reference wiring RL, the sub-pixel SP and the touch unit TU can be driven for different periods. For example, the display period during which the sub-pixel SP is driven and the touch sensing period during which the touch unit TU is driven can be time-division driven.

[0155] Specifically, referring to Figure 12, at the first time point t1 during the display period, a turn-on level scan signal SCAN is applied to the first scan wiring SL1. The scan signal SCAN on the first scan wiring SL1 turns on the first transistor T1, and a data voltage Vdata is applied to the sub-pixel SP, which can then be driven. During this time, a reference voltage is supplied to the reference wiring RL for the duration of the display period in which the sub-pixel SP is driven, allowing the third transistor T3 to be driven normally.

[0156] Then, at the second time point t2 during the touch sensing period, a turn-on level scan signal SCAN is applied to the second scan wiring SL2. The scan signal SCAN from the second scan wiring SL2 turns on the touch sensing transistor ST, and a touch drive signal is applied to the touch electrode TE, which can drive the touch unit TU. Therefore, during the touch sensing period in which the touch unit TU is driven, a touch drive signal is supplied to the reference wiring RL, allowing the touch unit TU to be driven normally.

[0157] Therefore, a reference voltage may be applied to the reference wiring RL during the display period when the third transistor T3 is turned on, and a touch drive signal may be applied to the reference wiring RL during the touch sensing period when the touch sensing transistor ST is turned on.

[0158] In the display device 900 according to other embodiments of this specification, the structure of the touch unit TU can be simplified by using the reference wiring RL of the sub-pixel SP as the touch sensing wiring Sen. To drive the touch unit TU, a touch driving signal is required to the touch sensing transistor ST and the touch electrode TE, and a touch sensing wiring Sen is required to detect the change in capacitance of the touch electrode TE. However, if the touch sensing wiring Sen is to be placed separately, additional design area is required, which may reduce the aperture ratio or make the structure of the display device more complex. However, in the display device 900 according to other embodiments of this specification, the sub-pixel SP and the touch unit TU are driven by sharing a single reference wiring RL, so the touch sensing wiring Sen can be eliminated and the structure of the display device can be simplified.

[0159] Furthermore, in the display device 900 according to other embodiments of this specification, the display period and the touch sensing period are time-division driven so that the sub-pixel SP and the touch unit TU can share a single reference wiring RL. During the display period, the third transistor T3 can be turned on and a reference voltage applied to the reference wiring RL to drive the sub-pixel SP. Then, during the touch sensing period, the touch sensing transistor ST can be turned on and a touch drive signal applied to the reference wiring RL to drive the touch unit TU. Therefore, in the display device 900 according to other embodiments of this specification, even if the sub-pixel SP and the touch unit TU share a single reference wiring RL, the display period and the touch sensing period are driven for different periods, so that touch can be sensed while displaying an image.

[0160] The various embodiments of this specification may be described as follows.

[0161] A display device according to one embodiment of this specification includes a plurality of subpixels arranged on a substrate, each including a drive transistor, a light-emitting element, and a pixel electrode connecting the drive transistor and the light-emitting element, and a plurality of touch portions arranged on the substrate, each including a touch-sensing transistor and a touch electrode connected to the touch-sensing transistor, wherein the pixel electrode and the touch electrode are arranged on the same layer.

[0162] Other features of this specification may further include low-potential power supply wiring located in each of a plurality of subpixels, and touch-sensing wiring located in any one of the plurality of subpixels and connected to a touch-sensing transistor, wherein in a first subpixel of the plurality of subpixels, the touch-sensing wiring and the low-potential power supply wiring may be located spaced apart from each other with a certain interval between them, and in a second subpixel of the plurality of subpixels, a pair of low-potential power supply wiring may be located spaced apart from each other with a certain interval between them.

[0163] According to other features of this specification, in a first subpixel of a plurality of subpixels, the light-emitting element may be positioned between a touch sensing wire and a low-potential power supply wire, and in a second subpixel of a plurality of subpixels, the light-emitting element may be positioned between a pair of low-potential power supply wires.

[0164] According to other features of this specification, touch sensing wiring and low-voltage power wiring may extend in one direction, and multiple subpixels and multiple touch areas may be arranged alternately in one direction.

[0165] According to other features of this specification, each of the multiple subpixels may further include a pair of low-potential power supply lines arranged apart from each other at a certain interval, and a reference line arranged between the multiple subpixels, and a touch sensing transistor may be connected between the reference line and the touch electrode.

[0166] According to other features of this specification, each of the multiple subpixels may further include a sensing transistor in which either a source electrode or a drain electrode is connected to a node between a driving transistor and a light-emitting element, and the other of the source electrode and drain electrode of the sensing transistor may be connected to a reference wiring.

[0167] According to other features of this specification, a touch drive signal may be applied to the reference wiring while the touch sensing transistor is turned on, and a reference voltage may be applied to the reference wiring while the sensing transistor is turned on.

[0168] According to other features of this specification, at least a portion of the touch sensing transistor may be placed on the same layer as the drive transistor.

[0169] Other embodiments of this specification include a display panel having a plurality of subpixels and a plurality of touch units, and a touch drive unit that provides touch drive signals to the plurality of touch units, wherein the plurality of subpixels and the plurality of touch units are arranged in different rows.

[0170] According to other features of this specification, each of the subpixels may include a first transistor connected to a data trace, a second transistor with a gate electrode connected to the source electrode of the first transistor, a third transistor connected between the source electrode of the second transistor and a reference trace, and a light-emitting element connected to the source electrode of the second transistor.

[0171] According to other features of this specification, each of the multiple touch areas may include a touch electrode that forms a touch capacitor with an external input, and a touch sensing transistor connected to the touch electrode, the touch sensing transistor and the first and third transistors may be connected to different scan lines.

[0172] According to other features of this specification, touch sensing wiring connected between the touch sensing transistor and the touch driver may be further included, and during one frame period, the display period for driving the subpixels and the touch sensing period for driving the touch area may overlap with each other in at least part.

[0173] According to other features of this specification, a touch sensing transistor may be coupled between a reference wiring and a touch electrode, and during one frame period, the display period for driving subpixels and the touch sensing period for driving touch areas may be different periods from each other.

[0174] Although embodiments of this specification have been described in more detail above with reference to the attached drawings, this specification is not necessarily limited to such embodiments and can be modified and implemented in various ways without deviating from the technical concept of this specification. Accordingly, the embodiments disclosed herein are for illustrative purposes only, not to limit the technical concept of this specification, and the scope of the technical concept of this specification is not limited by such embodiments. Therefore, the embodiments described above should be understood in all respects as illustrative and non-limiting. The scope of protection of this specification should be interpreted in accordance with the following claims, and all technical concepts within an equivalent scope should be interpreted as being included in the scope of rights of this specification.

Claims

1. A display device, said display device is A plurality of subpixels arranged on a substrate, each of which includes a driving transistor, a light-emitting element, and a pixel electrode connecting the driving transistor and the light-emitting element; and A plurality of touch portions arranged on the substrate, each of which includes a touch sensing transistor and a touch electrode connected to the touch sensing transistor, Includes, A display device in which the pixel electrode and the touch electrode are arranged on the same layer.

2. Low-voltage power supply wiring arranged in each of the plurality of subpixels; and The system further includes a touch sensing wire located on one of the plurality of subpixels and connected to the touch sensing transistor, In the first subpixel among the plurality of subpixels, the touch sensing wiring and the low-potential power supply wiring are arranged with a certain distance between them, and are separated from each other. The display device according to claim 1, wherein in the second subpixel among the plurality of subpixels, a pair of low-potential power supply wirings are arranged spaced apart from each other at a certain interval.

3. In the first subpixel among the plurality of subpixels, the light-emitting element is positioned between the touch sensing wiring and the low-potential power supply wiring. The display device according to claim 2, wherein in the second subpixel among the plurality of subpixels, the light-emitting element is positioned between the pair of low-potential power supply wirings.

4. The touch sensing wiring and the low-potential power supply wiring extend in one direction, The display device according to claim 2, wherein the plurality of subpixels and the plurality of touch portions are arranged alternately in the one direction.

5. In each of the plurality of subpixels, a pair of low-potential power supply wires are arranged spaced apart from each other at a certain interval; and The further includes a reference wiring positioned between the plurality of subpixels, The display device according to claim 1, wherein the touch sensing transistor is connected between the reference wiring and the touch electrode.

6. Each of the plurality of subpixels further includes a sensing transistor having a source electrode and a drain electrode, One of the source electrode and drain electrode of the sensing transistor is connected to a node between the drive transistor and the light-emitting element. The display device according to claim 5, wherein the source electrode and the other drain electrode of the sensing transistor are connected to the reference wiring.

7. While the touch sensing transistor is turned on, a touch drive signal is applied to the reference wiring. The display device according to claim 6, wherein a reference voltage is applied to the reference wiring while the sensing transistor is turned on.

8. The display device according to claim 1, wherein at least a portion of the touch sensing transistor is arranged in the same layer as the drive transistor.

9. A display device, said display device is A display panel including multiple subpixels and multiple touch areas; and Touch drive unit configured to provide touch drive signals to the plurality of touch units Includes, A display device in which the plurality of subpixels and the plurality of touch areas are arranged in different rows from each other.

10. Each of the aforementioned subpixels is, First transistor connected to data wiring; A second transistor in which the gate electrode is connected to the source electrode of the first transistor; A third transistor connected between the source electrode of the second transistor and the reference wiring; and The display device according to claim 9, further comprising a light-emitting element connected to the source electrode of the second transistor.

11. Each of the aforementioned multiple touch areas is Touch electrodes that form a touch capacitor with an external input; and Includes a touch sensing transistor connected to the touch electrode, The display device according to claim 10, wherein the touch sensing transistor is connected to the first transistor and the third transistor on different scan lines.

12. The system further includes touch sensing wiring connected between the touch sensing transistor and the touch drive unit, The display device according to claim 11, wherein, during a single frame period, the display period for driving any of the plurality of subpixels and the touch sensing period for driving any of the plurality of touch portions overlap each other at least partially.

13. The touch sensing transistor is connected between the reference wiring and the touch electrode. The display device according to claim 11, wherein, during a single frame period, the display period for driving any of the plurality of subpixels and the touch sensing period for driving any of the plurality of touch portions are different periods from each other.

14. A display device, said display device is A plurality of subpixels arranged on a substrate, each of which includes a driving transistor, a light-emitting element, and a pixel electrode connecting the driving transistor and the light-emitting element; and A plurality of touch portions arranged on the substrate, each of which includes a touch sensing transistor and a touch sensing wire connected to the touch sensing transistor, Includes, A display device in which, when transferring the light-emitting element to the plurality of subpixels, the touch sensing wiring is used as assembly wiring.

15. The present invention further includes low-potential power supply wiring arranged in each of the plurality of subpixels, wherein the touch sensing wiring and the low-potential power supply wiring are arranged at a certain distance apart from each other. When transferring the light-emitting element to the plurality of sub-pixels, the touch sensing wiring and the low-potential power supply wiring are used as assembly wiring. The display device according to claim 14.

16. The present invention further includes a touch capacitor having a first touch electrode and a second touch electrode, The display device according to claim 14, wherein the first touch electrode is connected to the touch sensing transistor, and the second touch electrode is connected to an external input.

17. Each of the plurality of subpixels further includes a sensing transistor having a source electrode and a drain electrode, One of the source electrode and drain electrode of the sensing transistor is connected to a node between the drive transistor and the light-emitting element. The display device according to claim 14, wherein the source electrode and the other drain electrode of the sensing transistor are connected to a reference wiring.

18. While the touch sensing transistor is turned on, a touch drive signal is applied to the reference wiring. The display device according to claim 17, wherein a reference voltage is applied to the reference wiring while the sensing transistor is turned on.

19. A display device, said display device is A plurality of subpixels arranged on a substrate, each of which includes a drive transistor, a pair of low-potential power supply wiring, a light-emitting element, and a pixel electrode connecting the drive transistor and the light-emitting element. Includes, The pair of low-potential power supply wires are arranged at a certain distance from each other, A display device in which, when transferring the light-emitting element onto a substrate, the pair of low-potential power supply wires are used as assembly wiring.

20. The display device according to claim 19, wherein the light-emitting element is dielectrically polarized, an alternating voltage is applied to the assembly wiring to form an electric field, and the light-emitting elements are aligned to the plurality of subpixels.

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