Substrate processing apparatus and control method for substrate processing apparatus

Abstract

The concentration of the solvent in the solvent vapor supplied to the chamber is stabilized. [Solution] The controller of the substrate processing apparatus controls a pressure control regulator (62) based on the pressure measured by a pressure sensor that measures the pressure in the vapor generation tank (30), thereby adjusting the flow rate of inert gas supplied to the vapor generation tank (30) storing the solvent via a first inert gas supply pipe (61). When the pressure measured by the pressure sensor reaches a target value, the controller performs a gas supply process (S12) to stop the supply of the inert gas, and a steam supply process (S14) to supply the solvent vapor from the vapor generation tank (30) to the chamber (1) via the gas supply pipe (31) after stopping the supply of the inert gas.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a control method thereof for drying a substrate with solvent vapor after performing processing on various substrates such as semiconductor wafers, glass substrates for liquid crystal display devices (LCDs), glass substrates for plasma display panels (PDPs), glass / ceramic substrates for magnetic / optical disks, and substrates for electronic devices using a processing liquid.

Background Art

[0002] Patent Document 1 describes a substrate processing apparatus that vaporizes a liquid raw material by supplying an inert gas to the liquid raw material filled in a tank, supplies the vaporized gas into a processing chamber, and forms a film on a wafer in a processing chamber for processing a wafer. In Patent Document 1, a controller of the substrate processing apparatus constantly monitors the absolute pressure in the tank using a pressure sensor. Based on the monitored pressure value, the controller adjusts the flow rate of the inert gas supplied to the tank so that the absolute pressure in the tank becomes the target value.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] By the way, in a substrate processing apparatus for drying a substrate processed with a processing liquid with solvent vapor in a chamber, there may be variations in the solvent concentration of the solvent vapor supplied into the chamber. As a cause of this, it is considered that the pressure in the vapor generation tank that generates the vapor of the solvent is easily affected by atmospheric pressure. When the pressure in the vapor generation tank fluctuates under the influence of atmospheric pressure, a pressure difference occurs between the pressure in the chamber and the pressure in the vapor generation tank. It is considered that this pressure difference causes variations in the solvent concentration of the solvent vapor supplied into the chamber.

[0005] The substrate processing apparatus described in Patent Document 1 supplies vaporized gas, obtained by vaporizing liquid raw materials in a tank, to the processing chamber while controlling the absolute pressure inside the tank. Therefore, if the absolute pressure inside the tank is adjusted while supplying vaporized gas to the processing chamber, it is possible that the absolute pressure inside the tank may temporarily deviate significantly from the target value. In this case, it is likely that variations will occur in the solvent concentration of the solvent vapor supplied into the chamber.

[0006] One aspect of the present invention aims to stabilize the concentration of the solvent in the solvent vapor supplied to the chamber. [Means for solving the problem]

[0007] To solve the above problems, a substrate processing apparatus according to one aspect of the present invention is a substrate processing apparatus for drying a substrate processed with a processing liquid using solvent vapor, comprising: a processing tank for storing the processing liquid; a chamber surrounding the processing tank; a pressure reducing device for reducing the pressure inside the chamber by discharging the gas inside the chamber; a vapor generation tank for storing a solvent and generating solvent vapor as the solvent vapor; a first supply pipe connecting the chamber and the vapor generation tank; a gas supply source for supplying inert gas to the vapor generation tank; a second supply pipe connecting the vapor generation tank and the first supply pipe; and a pressure sensor for measuring the pressure inside the vapor generation tank. The system includes a regulator for adjusting the flow rate of the inert gas supplied to the vapor generation tank, and a controller. The controller controls the regulator based on the pressure measured by the pressure sensor to adjust the flow rate of the inert gas supplied to the vapor generation tank storing the solvent via the second supply pipe, and performs a gas supply process to stop the supply of the inert gas when the pressure measured by the pressure sensor reaches a target value, and a vapor supply process to supply the solvent vapor from the vapor generation tank to the chamber via the first supply pipe after stopping the supply of the inert gas.

[0008] To solve the above problems, a control method for a substrate processing apparatus according to one aspect of the present invention is a substrate processing apparatus for drying a substrate processed with a processing liquid using solvent vapor, comprising: a processing tank for storing the processing liquid; a chamber surrounding the processing tank; a pressure reducing device for reducing the pressure inside the chamber by discharging the gas inside the chamber; a vapor generation tank for storing a solvent and generating solvent vapor as the solvent vapor; a first supply pipe connecting the chamber and the vapor generation tank; a gas supply source for supplying inert gas to the vapor generation tank; a second supply pipe connecting the vapor generation tank and the first supply pipe; and a pressure measuring device for measuring the pressure inside the vapor generation tank. A control method for a substrate processing apparatus comprising a force sensor and a regulator for adjusting the flow rate of the inert gas supplied to the vapor generation tank, the method comprising: a gas supply process for adjusting the flow rate of the inert gas supplied to the vapor generation tank storing the solvent via a second supply pipe by controlling the regulator based on the pressure measured by the pressure sensor, and stopping the supply of the inert gas when the pressure measured by the pressure sensor reaches a target value; and a vapor supply process for supplying the solvent vapor from the vapor generation tank to the chamber via a first supply pipe after stopping the supply of the inert gas. [Effects of the Invention]

[0009] According to one aspect of the present invention, the concentration of the solvent in the solvent vapor supplied to the chamber can be stabilized. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic diagram showing the general configuration of a substrate processing device. [Figure 2] This is a diagram showing the configuration of a circuit board processing unit. [Figure 3] This is a diagram illustrating the operation of a substrate processing device. [Figure 4] This is a diagram illustrating the operation of a substrate processing device. [Figure 5] This graph shows the experimental results when the pressure inside the steam generation tank was adjusted. [Figure 6]This graph shows the experimental results when the pressure inside the steam generation tank was adjusted. [Figure 7] This graph shows the pressure changes inside the steam generation tank. [Figure 8] This graph shows the pressure changes inside the steam generation tank. [Modes for carrying out the invention]

[0011] [Embodiment 1] One embodiment of this disclosure will be described in detail below.

[0012] [Overview of substrate processing equipment] The schematic configuration of the substrate processing apparatus 100 will be described with reference to Figures 1 and 2. Figure 1 is a schematic diagram showing the schematic configuration of the substrate processing apparatus 100. Figure 2 is a block diagram showing the configuration of the substrate processing apparatus 100. The substrate processing apparatus 100 is a device that dries a substrate W that has been processed with a processing liquid using solvent vapor. The substrate W is a semiconductor substrate such as a silicon wafer.

[0013] As shown in Figure 1, the substrate processing apparatus 100 comprises a chamber 1, a processing tank 3, and a lifter 5. The chamber 1 surrounds the processing tank 3 for storing the processing liquid. Above the chamber 1 is an opening / closing lid 2 that opens and closes an opening formed in the upper part of the chamber 1. The opening / closing lid 2 is movable between a closed position 2A that closes the opening formed in the upper part of the chamber 1 and an open position 2B that opens the opening.

[0014] The processing tank 3 is provided with a nozzle 11. The nozzle 11 is connected to a processing liquid supply pipe 21 provided with an on-off valve 72. The processing liquid is supplied to the nozzle 11 from a processing liquid supply unit 20 through the processing liquid supply pipe 21. When a driving unit (not shown) of the processing liquid supply unit 20 is driven, the processing liquid is supplied from a tank (not shown) that stores the processing liquid to the processing liquid supply pipe 21. When the on-off valve 72 is in an open state, the processing liquid can be supplied to the nozzle 11 through the processing liquid supply pipe 21. When the on-off valve 72 is in a closed state, the processing liquid cannot be supplied to the nozzle 11 through the processing liquid supply pipe 21. A substrate W that moves up and down by a lifter 5 is immersed in the processing liquid stored in the processing tank 3.

[0015] At the lower part of the processing tank 3, a discharge port 4 for discharging the processing liquid inside the processing tank 3 to the outside of the processing tank 3 is formed. The discharge port 4 is connected to a discharge pipe 41 provided with an on-off valve 70. The processing liquid inside the processing tank 3 is discharged to the bottom of the chamber 1 through the discharge pipe 41 when the on-off valve 70 is in an open state, and is not discharged to the bottom of the chamber 1 through the discharge pipe 41 when the on-off valve 70 is in a closed state. At the bottom of the chamber 1, a drain pipe 42 provided with an on-off valve 71 is connected. The liquid stored at the bottom of the chamber 1 is discharged to the outside of the chamber 1 through the drain pipe 42 when the on-off valve 71 is in an open state, and is not discharged to the outside of the chamber 1 through the drain pipe 42 when the on-off valve 71 is in a closed state.

[0016] The lifter 5 is a mechanism for moving the substrate W up and down with respect to the chamber 1. The lifter 5 includes a back plate 6 and a substrate support portion 7. The back plate 6 is a member that extends in the vertical direction, and the substrate support portion 7 is attached to the lower portion of the back plate 6. The substrate support portion 7 is a member that supports the substrate W from below. By fitting the substrate W into one or more grooves formed in the substrate support portion 7, the substrate support portion 7 supports the substrate W from below. The substrate support portion 7 supports one or more substrates W.

[0017] The lifter 5 moves the back plate 6 vertically by the driving force from a driving unit (not shown). As the back plate 6 moves vertically, the substrate W supported by the substrate support portion 7 moves up and down in the chamber 1. The lifter 5 is movable to a dipping position 5A, a drying position 5B, and a take-out position 5C. The dipping position 5A is a position where the substrate W supported by the substrate support portion 7 is immersed in the processing liquid stored in the processing tank 3. The drying position 5B is a position where the substrate W supported by the substrate support portion 7 is positioned inside the chamber 1 and outside the processing tank 3. The drying position 5B is positioned above the dipping position 5A inside the chamber 1. The take-out position 5C is a position where the substrate W supported by the substrate support portion 7 is positioned outside the chamber 1.

[0018] The chamber 1 is provided with a chamber pressure sensor 8 for detecting the pressure inside the chamber 1. Based on the pressure detected by the chamber pressure sensor 8, the pressure inside the chamber 1 is controlled.

[0019] The chamber 1 is provided with nozzles 12 and 13. The nozzles 12 and 13 are nozzles for discharging solvent vapor or inert gas into the chamber 1. The nozzles 12 and 13 are provided at the upper part of the chamber 1, respectively. The nozzle 13 is positioned above the nozzle 12. The nozzles 12 and 13 are each connected to a gas supply pipe 31.

[0020] The gas supply pipe 31 is equipped with a heater 85, an on-off valve 79, and an on-off valve 80. The heater 85 heats the inside of the gas supply pipe 31 and controls the temperature of the solvent vapor or inert gas discharged from the nozzles 12 and 13. The on-off valve 79 is located in the gas supply pipe 31 between the heater 85 and the nozzle 13. When the on-off valve 79 is open, solvent vapor or inert gas is discharged from the nozzle 13, and when the on-off valve 79 is closed, solvent vapor or inert gas is not discharged from the nozzle 13. The on-off valve 80 is located in the gas supply pipe 31 between the heater 85 and the nozzle 12. When the on-off valve 80 is open, solvent vapor or inert gas is discharged from the nozzle 12, and when the on-off valve 80 is closed, solvent vapor or inert gas is not discharged from the nozzle 12.

[0021] Chamber 1 is connected to a chamber exhaust pipe 25, which is equipped with an exhaust pump 26 and an on-off valve 73. The exhaust pump 26 reduces the pressure inside Chamber 1 by discharging the gas inside Chamber 1 through the chamber exhaust pipe 25. The exhaust pump 26 is an example of a pressure reducing device. When the on-off valve 73 is open, the exhaust pump 26 can discharge the gas inside Chamber 1. When the on-off valve 73 is closed, the exhaust pump 26 cannot discharge the gas inside Chamber 1.

[0022] The substrate processing apparatus 100 includes a steam generation tank 30 and a gas supply pipe 31. The steam generation tank 30 is a tank that stores solvent and generates solvent vapor as solvent vapor. The gas supply pipe 31 connects the chamber 1 and the steam generation tank 30. The gas supply pipe 31 is an example of a first supply pipe. The gas supply pipe 31 is provided with an on-off valve 77. The on-off valve 77 is located upstream of the connection point in the gas supply pipe 31 where the gas supply pipe 31 connects to the second inert gas supply pipe 65, which will be described later. When the on-off valve 77 is open, solvent vapor generated in the steam generation tank 30 can be supplied to the chamber 1 via the gas supply pipe 31. When the on-off valve 77 is closed, solvent vapor generated in the steam generation tank 30 cannot be supplied to the chamber 1 via the gas supply pipe 31.

[0023] The steam generation tank 30 is equipped with a vacuum gauge 32. The vacuum gauge 32 measures the pressure inside the steam generation tank 30. More specifically, the vacuum gauge 32 measures the difference between the pressure inside the steam generation tank 30 detected by the device itself and the absolute pressure inside the steam generation tank 30 measured by the pressure sensor 63, which will be described later. As shown in Figure 2, the steam generation tank 30 is equipped with a heater 34. The heater 34 heats the inside of the steam generation tank 30. The heater 34 is an example of a heating device. The temperature inside the steam generation tank 30 is controlled by the heater 34.

[0024] Returning to Figure 1, the substrate processing apparatus 100 is equipped with a solvent supply pipe 51. The solvent supply pipe 51 is an example of a third supply pipe. The solvent supply pipe 51 connects the solvent supply unit 50, which is a solvent supply source that supplies solvent to the vapor generation tank 30, to the vapor generation tank 30. When a drive unit (not shown) is driven, the solvent supply unit 50 supplies solvent from a tank (not shown) that stores solvent to the solvent supply pipe 51. When the on-off valve 74 provided on the solvent supply pipe 51 is in the open state, the solvent supplied from the solvent supply unit 50 is supplied to the vapor generation tank 30 via the solvent supply pipe 51. When the on-off valve 74 is in the closed state, solvent cannot be supplied from the solvent supply unit 50 to the vapor generation tank 30 via the solvent supply pipe 51. Examples of solvents supplied from the solvent supply unit 50 include isopropyl alcohol (IPA) and hydrofluoroether (HFE).

[0025] The substrate processing apparatus 100 is equipped with a first inert gas supply pipe 61, which is an example of a second supply pipe. The first inert gas supply pipe 61 connects the steam generation tank 30 to an inert gas supply unit 60, which is a gas supply source that supplies inert gas to the steam generation tank 30. When a drive unit (not shown) is driven, inert gas is supplied to the first inert gas supply pipe 61 from a tank (not shown) that contains inert gas. When the on-off valve 76 provided on the first inert gas supply pipe 61 is in the open state, the inert gas supplied from the inert gas supply unit 60 is supplied to the steam generation tank 30 via the first inert gas supply pipe 61. When the on-off valve 76 is in the closed state, inert gas cannot be supplied from the inert gas supply unit 60 to the steam generation tank 30 via the first inert gas supply pipe 61. Examples of inert gases supplied by the inert gas supply unit 60 include nitrogen gas (N2) and argon gas (Ar).

[0026] A pressure control regulator 62 is provided in the first inert gas supply pipe 61. The pressure control regulator 62 adjusts the flow rate of inert gas supplied to the steam generation tank 30 via the first inert gas supply pipe 61. The pressure control regulator 62 is an example of a regulator. The pressure control regulator 62 is, for example, an electro-pneumatic regulator. The pressure control regulator 62 is located downstream of the on-off valve 76 in the first inert gas supply pipe 61. That is, the pressure control regulator 62 is located between the on-off valve 76 and the steam generation tank 30 in the first inert gas supply pipe 61.

[0027] As shown in Figure 2, the pressure control regulator 62 is equipped with a pressure sensor 63. The pressure sensor 63 measures the pressure inside the steam generation tank 30. The pressure sensor 63 measures the absolute pressure inside the steam generation tank 30. In this embodiment, the pressure inside the steam generation tank 30 is calculated based on the pressure detected by the pressure sensor 63. In this embodiment, the pressure sensor 63 detects the pressure inside the first inert gas supply pipe 61. More specifically, the pressure sensor 63 detects the pressure inside the pipe through which the inert gas in the pressure control regulator 62 passes. Note that the pressure sensor 63 is not limited to measuring the absolute pressure inside the steam generation tank 30.

[0028] The pressure control regulator 62 adjusts the flow rate of inert gas supplied to the steam generation tank 30 based on the pressure in the steam generation tank 30 measured by the pressure sensor 63. More specifically, the pressure control regulator 62 adjusts the flow rate of inert gas supplied to the steam generation tank 30 so that the pressure measured by the pressure sensor 63 reaches a target value. The pressure control regulator 62 is feedback controlled based on the detection results of the pressure sensor 63.

[0029] The pressure sensor 63 is not limited to being provided on the pressure control regulator 62. The pressure sensor 63 may be a separate device from the pressure control regulator 62. In this case, the pressure sensor 63 may be provided on the steam generation tank 30, and the pressure control regulator 62 may be provided on the first inert gas supply pipe 61.

[0030] Returning to Figure 1, the substrate processing apparatus 100 may also include a second inert gas supply pipe 65. The second inert gas supply pipe 65 connects the inert gas supply unit 60 and the gas supply pipe 31. When the on-off valve 78 provided on the second inert gas supply pipe 65 is in the open state, inert gas can be supplied from the inert gas supply unit 60 to the gas supply pipe 31 via the second inert gas supply pipe 65. When the on-off valve 78 is in the open state, inert gas cannot be supplied from the inert gas supply unit 60 to the gas supply pipe 31 via the second inert gas supply pipe 65.

[0031] The heater 86 is installed in the second inert gas supply pipe 65 and heats the inside of the second inert gas supply pipe 65. The heater 86 controls the temperature of the inert gas flowing through the second inert gas supply pipe 65. In the second inert gas supply pipe 65, the heater 86 is located between the on-off valve 78 and the connection portion where the second inert gas supply pipe 65 connects to the gas supply pipe 31.

[0032] The substrate processing apparatus 100 is equipped with a tank exhaust pipe 35 and an on-off valve 75. The tank exhaust pipe 35, which is connected to the steam generation tank 30, is provided with an on-off valve 75. The tank exhaust pipe 35 is an example of an exhaust pipe, and the on-off valve 75 is an example of an exhaust device. The tank exhaust pipe 35 has a first exhaust port 351 (see Figure 4) and a second exhaust port 352 (see Figure 4) for discharging gas from inside the steam generation tank 30 to the outside. When the on-off valve 75 is open, it is possible to discharge gas from inside the steam generation tank 30 to the outside through the first exhaust port 351. When the on-off valve 75 is closed, it is not possible to discharge gas from inside the steam generation tank 30 to the outside through the first exhaust port 351. The second exhaust port 352 can discharge gas from inside the steam generation tank 30 to the outside regardless of whether the on-off valve 75 is open or closed.

[0033] The second exhaust port 352 has a smaller opening diameter than the first exhaust port 351. The opening diameter of the second exhaust port 352 is set to a size that allows for adjustment of the pressure inside the steam generation tank 30. The opening diameter of the first exhaust port 351 is set to a size that does not allow for adjustment of the pressure inside the steam generation tank 30. For example, the opening diameter of the first exhaust port 351 is about 6 mm to 8 mm, and the opening diameter of the second exhaust port 352 is about 3 mm.

[0034] As shown in Figure 2, the substrate processing apparatus 100 further includes a controller 90. The controller 90 includes a processor 91 that performs various calculations according to a program, and a memory 92 that stores various information such as programs. The processor 91 executes various processes according to a program pre-stored in the memory 92. Examples of the processor 91 include a CPU (Central Processing Unit), a DSP (Digital Signal Processor), a GPU (Graphic Processing Unit), and an MPU (Micro Processing Unit). Examples of the memory 92 include a ROM (Read Only Memory), RAM (Random Access Memory), flash memory, and an HDD (Hard Disk Drive).

[0035] The controller 90 controls various parts of the substrate processing apparatus 100. The controller 90 controls the lifter 5, chamber pressure sensor 8, processing liquid supply unit 20, exhaust pump 26, heater 34, vacuum gauge 32, solvent supply unit 50, inert gas supply unit 60, pressure control regulator 62, on / off valves 70-80, and heaters 85, 86.

[0036] [Operation of the circuit board processing unit] Next, referring to Figure 3, the operation of the substrate processing apparatus 100, which is controlled by the controller 90 when processing the substrate W, will be described. Figure 3 is a diagram illustrating the operation of the substrate processing apparatus 100. In Figure 3, for the sake of readability, only the essential parts of the configuration of the substrate processing apparatus 100 are shown, and other components are omitted from the illustration. Also, in Figure 3, for the sake of readability, reference numerals attached to the parts shown may be omitted in some cases.

[0037] As shown in Figure 3, in step S1, the substrate W is immersed in the processing liquid. In step S1, the processor 91 moves the lifter 5 to the immersion position 5A to immerse the substrate W in the processing liquid of the processing tank 3. In step S1, after immersing the substrate W in the processing liquid, the processor 91 fills the chamber 1 with inert gas. More specifically, the processor 91 controls the on-off valves 78 and 79 to the open state and the on-off valves 77 and 80 to the closed state. In step S1, the processor 91 drives the inert gas supply unit 60 for a predetermined time. As a result, inert gas is supplied from the nozzle 13 into the chamber 1, and the chamber 1 is filled with inert gas. In step S1, after filling the chamber 1 with inert gas, the processor 91 reduces the pressure inside the chamber 1. More specifically, the processor 91 drives the exhaust pump 26 for a predetermined time to discharge the gas inside the chamber 1 to the outside.

[0038] In step S2, the process of supplying solvent vapor into chamber 1 while reducing the pressure inside chamber 1 is performed. In step S2, the processor 91 controls the on-off valves 77 and 79 to the open state and the on-off valves 78 and 80 to the closed state. As a result, the solvent vapor contained in the vapor generation tank 30 is sent to the nozzle 13 via the gas supply pipe 31 and supplied from the nozzle 13 into chamber 1. In step S2, the processor 91 drives the exhaust pump 26 for a predetermined time to discharge the gas inside chamber 1 to the outside. In step S2, the processor 91 may also drive the heater 85. It is preferable that the solvent vapor passing through the gas supply pipe 31 is temperature-controlled by driving the heater 85.

[0039] In step S3, the pressure reduction in chamber 1 is stopped, and the supply of solvent vapor to chamber 1 by nozzle 13 is continued. In step S3, processor 91 stops driving exhaust pump 26 to stop the discharge of gas from chamber 1. In step S3, processor 91 continues to control valves 77 and 79 to the open state, and continues to control valves 78 and 80 to the closed state. In step S3, processor 91 may also continue driving heater 85.

[0040] In step S4, the process of moving the substrate W to the outside of the processing tank 3 is carried out while continuing to supply solvent vapor into the chamber 1 by the nozzle 13. In step S4, the processor 91 moves the lifter 5 to the drying position 5B. This positions the substrate W outside the processing tank 3. In step S4, the supply of solvent vapor into the chamber 1 by the nozzle 13 is continued. That is, the processor 91 continues to control the on-off valves 77 and 79 to the open state and continues to control the on-off valves 78 and 80 to the closed state. In addition, in step S4, the processor 91 may continue to drive the heater 85.

[0041] In step S5, the substrate W is dried. In step S5, the processor 91 dries the substrate W while supplying inert gas into the chamber 1. More specifically, in step S5, the processor 91 controls the on-off valves 78 and 79 to the open state and the on-off valves 77 and 80 to the closed state. In step S5, the processor 91 drives the inert gas supply unit 60. This supplies inert gas into the chamber 1 from the nozzle 13. In step S5, the processor 91 drives the exhaust pump 26 for a predetermined time to discharge the gas in the chamber 1 to the outside. In step S5, the processor 91 maintains the state in which the lifter 5 has been moved to the drying position 5B. Also in step S5, the processor 91 stops driving the heater 85.

[0042] In step S6, the pressure inside chamber 1 is reduced to atmospheric pressure. In step S6, the processor 91 controls the on-off valves 78, 79, and 80 to the open state and the on-off valve 77 to the closed state. As a result, inert gas is supplied into chamber 1 from nozzles 12 and 13. In step S6, the processor 91 stops the operation of the exhaust pump 26. As a result, the pressure inside chamber 1 is reduced to atmospheric pressure.

[0043] In step S7, the substrate W is removed from the chamber 1. In step S7, the processor 91 moves the lifter 5 to the removal position 5C. In step S7, the processor 91 controls the on-off valves 78 and 79 to the open state and the on-off valves 77 and 80 to the closed state. As a result, the substrate W is removed while an inert gas is supplied into the chamber 1 from the nozzle 13.

[0044] Next, referring to Figure 4, the operation of the substrate processing apparatus 100 controlled by the controller 90 during the supply of solvent vapor into the chamber 1 in steps S2 to S4 described above will be explained. Figure 4 is a diagram illustrating the operation of the substrate processing apparatus 100. Note that in Figure 4, for the sake of readability, only the essential components of the substrate processing apparatus 100 are shown, and other components are omitted from the illustration.

[0045] As shown in Figure 4, in step S11, a solvent supply process is performed in which solvent is supplied to the vapor generation tank 30 via the solvent supply pipe 51. In step S11, the processor 91 controls the on / off valve 74 to the open state and drives the solvent supply unit 50. As a result, solvent is supplied from the solvent supply unit 50 to the vapor generation tank 30 via the solvent supply pipe 51, and the solvent is stored in the vapor generation tank 30. In step S11, after a predetermined time has elapsed, the processor 91 stops driving the solvent supply unit 50.

[0046] In step S11, the processor 91 controls the on-off valve 75 to the open state. As a result, when solvent is supplied into the steam generation tank 30, the gas inside the steam generation tank 30 is discharged to the outside from the first exhaust port 351 of the tank exhaust pipe 35. In step S1, the pressure inside the steam generation tank 30 is easily affected by atmospheric pressure. In step S11, the processor 91 controls the on-off valves 76 and 77 to the closed state.

[0047] In step S12, a gas supply process is performed to supply inert gas to the steam generation tank 30 via the first inert gas supply pipe 61. In step S12, the processor 91 controls the on / off valve 76 to the open state and drives the inert gas supply unit 60. As a result, inert gas is supplied from the inert gas supply unit 60 to the steam generation tank 30 via the first inert gas supply pipe 61, and the inert gas is contained within the steam generation tank 30.

[0048] In step S12, when the pressure measured by the pressure sensor 63 reaches the target value, the processor 91 stops driving the inert gas supply unit 60 and stops supplying inert gas to the vapor generation tank 30. In step S12, the processor 91 provides feedback control to the pressure control regulator 62 based on the detection result of the pressure sensor 63. This adjusts the flow rate of the inert gas supplied to the vapor generation tank 30 containing the solvent via the first inert gas supply pipe 61.

[0049] In step S12, the processor 91 controls the on-off valve 75 to the open state. As a result, when inert gas is supplied to the steam generation tank 30, the gas inside the steam generation tank 30 is discharged to the outside from the first exhaust port 351 of the tank exhaust pipe 35. In step S11, the processor 91 controls the on-off valves 74 and 77 to the closed state.

[0050] In step S13, a temperature control process is performed in which the heater 34 controls the temperature inside the steam generation tank 30. Step S13 is performed after the supply of inert gas is stopped, that is, after the operation of the inert gas supply unit 60 is stopped. In step S13, the processor 91 drives the heater 34 to heat the inside of the steam generation tank 30 for a predetermined time. In step S13, the processor 91 controls the on-off valve 75 to a closed state. As a result, when the temperature inside the steam generation tank 30 is being controlled, the gas inside the steam generation tank 30 is not discharged to the outside from the first exhaust port 351 of the tank exhaust pipe 35. Also in step S13, the processor 91 controls the on-off valves 74 to 77 to a closed state.

[0051] In step S14, a steam supply process is performed in which solvent vapor is supplied from the steam generation tank 30 to the chamber 1 via the gas supply pipe 31. Step S14 is performed after the supply of inert gas is stopped, that is, after the operation of the inert gas supply unit 60 is stopped. Also in step S14, temperature-controlled solvent vapor is supplied from the steam generation tank 30 to the chamber 1.

[0052] In step S14, the processor 91 controls the on-off valve 77 to the open state. As a result, the pressure inside the chamber 1 has been reduced in step S1 described above, and solvent vapor is supplied from the vapor generation tank 30 to the chamber 1. In step S14, the processor 91 controls the on-off valves 74 to 76 to the closed state.

[0053] Step S12 is performed after the exhaust pump 26 is driven to reduce the pressure inside the chamber 1 in step S1 described above. Furthermore, each step S12 and S13 is executed at a timing determined by calculating backward from the scheduled stop time for stopping the operation of the exhaust pump 26 in step S1.

[0054] Next, with reference to Figures 5 to 8, the experimental results regarding pressure regulation in the steam generation tank 30 and pressure changes in the steam generation tank 30 will be explained. In the experiments shown in Figures 5 to 8, IPA was used as the solvent stored in the steam generation tank 30, and N2 gas was used as the inert gas supplied to the steam generation tank 30.

[0055] First, the experimental results regarding pressure regulation in the steam generation tank 30 will be explained. Figures 5 and 6 are graphs showing the results of an experiment in which the pressure inside the steam generation tank 30 and the pressure inside the first inert gas supply pipe 61 detected by the pressure sensor 63 of the pressure control regulator 62 were measured. In the experiment shown in Figures 5 and 6, the pressure inside the steam generation tank 30 was measured by a sensor other than the pressure sensor 63. The vertical axis of the graphs shown in Figures 5 and 6 represents the pressure value (kPa) inside the steam generation tank 30. The horizontal axis of the graphs shown in Figures 5 and 6 represents the pressure value inside the first inert gas supply pipe 61 detected by the pressure sensor 63 of the pressure control regulator 62, and indicates the target value (kPa) of the pressure inside the first inert gas supply pipe 61. The pressure values ​​in the graphs shown in Figures 5 and 6 are all absolute pressures.

[0056] In the experiment shown in Figure 5, the pressure control regulator 62 was feedback controlled for 37 seconds so that the pressure value detected by the pressure sensor 63 reached the target value, and then the pressure inside the steam generation tank 30 was measured. The solid line L1 in the graph of Figure 5 shows the relationship between the pressure value inside the steam generation tank 30 immediately after the pressure control regulator 62 was feedback controlled for 37 seconds and the target pressure value inside the first inert gas supply pipe 61. The solid line L2 in the graph of Figure 5 shows the relationship between the pressure value inside the steam generation tank 30 immediately after the temperature inside the steam generation tank 30 was controlled for 5 seconds after the pressure control regulator 62 was feedback controlled for 37 seconds and the target pressure value inside the first inert gas supply pipe 61. As shown by solid lines L1 and L2, the pressure inside the steam generation tank 30 increased linearly in proportion to the increase in the pressure inside the first inert gas supply pipe 61.

[0057] In the experiment shown in Figure 6, the pressure control regulator 62 was feedback controlled for 22 seconds so that the pressure value detected by the pressure sensor 63 reached the target value, and then the pressure inside the steam generation tank 30 was measured. The solid line L3 in the graph of Figure 6 shows the relationship between the pressure value inside the steam generation tank 30 immediately after the pressure control regulator 62 was feedback controlled for 22 seconds and the target pressure value inside the first inert gas supply pipe 61. The solid line L4 in the graph of Figure 6 shows the relationship between the pressure value inside the steam generation tank 30 immediately after the temperature control of the steam generation tank 30 was adjusted for 20 seconds after the pressure control regulator 62 was feedback controlled for 22 seconds, and the target pressure value inside the first inert gas supply pipe 61. As shown by solid lines L3 and L4, even when the feedback control time was shortened and the temperature control time inside the steam generation tank 30 was increased, the pressure inside the steam generation tank 30 increased linearly in proportion to the increase in the pressure inside the first inert gas supply pipe 61.

[0058] From the experimental results shown in Figures 5 and 6, it was found that the pressure inside the steam generation tank 30 changes linearly in proportion to the change in pressure inside the first inert gas supply pipe 61. These experimental results show that the pressure inside the steam generation tank 30 can be measured based on the pressure inside the first inert gas supply pipe 61.

[0059] Next, we will explain the experimental results regarding the pressure change in the steam generation tank 30. Figures 7 and 8 are graphs showing the pressure change in the steam generation tank 30. The vertical axis of the graphs in Figures 7 and 8 represents the pressure value (kPa) in the steam generation tank 30. The horizontal axis of the graphs in Figures 7 and 8 represents the time (S) elapsed since the start of supplying IPA to the steam generation tank 30. The pressure values ​​in the steam generation tank 30 shown in Figures 7 and 8 are absolute pressures. In Figures 7 and 8, the timing at which the depressurization in chamber 1 started is shown as timing T1, and the timing at which the supply of IPA steam to chamber 1 started is shown as timing T2, both represented by solid lines.

[0060] The graph in Figure 7 shows the pressure change inside the steam generation tank 30 when no pressure adjustment is performed. Samples A1 to A3 shown in the graph in Figure 7 represent the results of experiments conducted under different atmospheric pressure conditions. Sample A1 is the data from the experiment conducted under the lowest atmospheric pressure among the experimental conditions of Samples A1 to A3. Sample A2 is the data from the experiment conducted under the highest atmospheric pressure among the experimental conditions of Samples A1 to A3.

[0061] As shown in the graph in Figure 7, at the start of supplying IPA to the steam generation tank 30, the pressure values ​​inside the steam generation tank 30 for each sample A1 to A3 are affected by the atmospheric pressure in the experimental environment and are therefore approximately the same as the atmospheric pressure in that experimental environment. Consequently, there is variation in the pressure values ​​inside the steam generation tank 30 for each sample A1 to A3 at the start of supplying IPA to the steam generation tank 30. In particular, the pressure difference between sample A1, which has the lowest pressure value inside the steam generation tank 30, and sample A2, which has the highest pressure value inside the steam generation tank 30, is large.

[0062] In each of the samples A1 to A3, the pressure value inside the steam generation tank 30 fluctuated slightly from the start of IPA supply to the steam generation tank 30 until timing T2, but it was found that it did not fluctuate significantly between the start of IPA supply to the steam generation tank 30 and timing T2. In other words, it was found that there was variation in the pressure value inside the steam generation tank 30 in each of the samples A1 to A3 at timing T2.

[0063] The graph in Figure 8 shows the pressure change inside the steam generation tank 30 when the pressure inside the steam generation tank 30 is regulated. Samples B1 to B5 shown in the graph in Figure 8 represent the results of experiments conducted under various experimental conditions. Samples B1, B3, and B4 each represent the results of experiments conducted under experimental conditions where the atmospheric pressure was approximately the same. Sample B5 is the data from an experiment conducted under the experimental conditions with the highest atmospheric pressure among the experimental conditions of Samples B1 to B4. Sample B2 represents the results of an experiment conducted under experimental conditions with atmospheric pressure different from that of Samples B1 and Samples B3 to B5.

[0064] As shown in the graph in Figure 8, at the start of supplying IPA to the steam generation tank 30, the pressure values ​​inside the steam generation tank 30 for each sample B1 to B5 are affected by the atmospheric pressure in the experimental environment and are therefore approximately the same as the atmospheric pressure in that environment. Consequently, there is variation in the pressure values ​​inside the steam generation tank 30 for each sample B1 to B5 at the start of supplying IPA to the steam generation tank 30. In particular, the pressure difference is large between samples B1, B3, and B4, which have the lowest pressure values ​​inside the steam generation tank 30, and sample B5, which has the highest pressure value inside the steam generation tank 30.

[0065] As shown in the graph in Figure 8, after timing T1, the pressure inside the steam generation tank 30 is regulated by adjusting the amount of N2 gas supplied to the steam generation tank 30. As a result, at timing T3, when the supply of N2 gas is stopped after the pressure regulation inside the steam generation tank 30 is completed, the variation in the pressure values ​​inside the steam generation tank 30 for each sample B1 to B5 is reduced. In particular, the pressure difference between samples B1, B3, and B4 and sample B5 is reduced. Between timing T3 and timing T2, the temperature inside the steam generation tank 30 is regulated, so the pressure values ​​inside the steam generation tank 30 for each sample B1 to B5 increase. At timing T2, the variation in the pressure values ​​inside the steam generation tank 30 for each sample B1 to B5 is less than the variation in the pressure values ​​inside the steam generation tank 30 for each sample B1 to B5 at the start of IPA supply.

[0066] As shown in the experimental results in Figure 7, at timing T2, the pressure inside the steam generation tank 30 fluctuated due to the influence of atmospheric pressure. Therefore, it is conceivable that fluctuations in the pressure inside the steam generation tank 30 would cause fluctuations in the IPA concentration of the IPA vapor generated inside the steam generation tank 30. In other words, fluctuations would also occur in the IPA concentration of the IPA vapor supplied to chamber 1. As shown in the experimental results in Figure 8, by temporarily stopping the supply of inert gas after regulating the pressure inside the steam generation tank 30, it was possible to reduce the pressure fluctuations inside the steam generation tank 30 under various atmospheric pressure conditions. Therefore, it is suggested that it is possible to make it difficult for fluctuations to occur in the IPA concentration of the IPA vapor generated inside the steam generation tank 30. In other words, it is suggested that it is possible to make it difficult for fluctuations to occur in the IPA concentration of the IPA vapor supplied to chamber 1.

[0067] As described above, the substrate processing apparatus 100 temporarily stops the supply of inert gas after the pressure in the vapor generation tank 30 reaches the target value. Subsequently, solvent vapor is supplied from the vapor generation tank 30 to the chamber 1. Even if there is a change in atmospheric pressure, the vapor generation tank 30 is pressure-regulated, so variations in the solvent concentration of the solvent vapor supplied from the vapor generation tank 30 to the chamber 1 can be reduced. This makes it possible to stabilize the solvent concentration of the solvent vapor supplied to the chamber 1.

[0068] Furthermore, according to the substrate processing apparatus 100 described above, after the temperature inside the steam generation tank 30 is controlled, the controlled solvent vapor is supplied from the steam generation tank 30 to the chamber 1. Therefore, it is possible to prevent the temperature inside the chamber 1 from decreasing due to the solvent vapor supplied from the steam generation tank 30 to the chamber 1.

[0069] Furthermore, the substrate processing apparatus 100 prevents the pressure inside the steam generation tank 30 from rising when supplying a solvent or inert gas to the steam generation tank 30 by discharging the gas inside the steam generation tank 30 using the on / off valve 75. This makes it possible to appropriately adjust the pressure inside the steam generation tank 30.

[0070] Furthermore, when the substrate processing apparatus 100 is controlling the temperature inside the steam generation tank 30, it keeps the on-off valve 75 closed, thereby preventing the gas inside the steam generation tank 30 from being discharged to the outside. This prevents the pressure inside the steam generation tank 30 from becoming equal to the ambient pressure. As a result, it becomes possible to control the temperature while maintaining the pressure inside the steam generation tank 30.

[0071] Furthermore, according to the substrate processing apparatus 100, since a second exhaust port 352 is provided in the tank exhaust pipe 35, the gas inside the steam generation tank 30 can be discharged through the second exhaust port 352. Also, the opening diameter of the second exhaust port 352 is smaller than that of the first exhaust port 351. Therefore, even when the gas inside the steam generation tank 30 is not exhausted through the first exhaust port 351 by the on-off valve 75, the gas inside the steam generation tank 30 can be discharged through the second exhaust port 352 while regulating the pressure inside the steam generation tank 30. This makes it possible to regulate the pressure inside the steam generation tank 30 while also controlling the temperature inside the steam generation tank 30.

[0072] Furthermore, in the substrate processing apparatus 100, the pressure sensor 63 is provided in the first inert gas supply pipe 61. Therefore, the pressure sensor 63 can be easily installed in the substrate processing apparatus 100. For example, the pressure sensor 63 can be retrofitted to an existing substrate processing apparatus 100. [Explanation of Symbols]

[0073] 1 Chamber 3. Treatment tank 26. Exhaust pump (pressure reducing device) 30 Steam generating tank 31. Gas supply pipe (first supply pipe) 34. Heater (heating device) 35 Tank exhaust pipe 51 Solvent supply pipe (third supply pipe) 61. First inert gas supply pipe (second supply pipe) 62 Pressure control regulator (regulator) 63 Pressure Sensor 90 Controllers 100 Substrate Processing Equipment 351 First exhaust port 352 Second exhaust port

Claims

1. A substrate processing apparatus for drying a substrate that has been treated with a processing solution using solvent vapor, A treatment tank for storing the treated liquid, A chamber surrounding the aforementioned processing tank, A pressure reducing device that reduces the pressure inside the chamber by discharging the gas inside the chamber, A vapor generating tank for storing a solvent and generating the solvent vapor as the solvent vapor, A first supply pipe connecting the chamber and the steam generation tank, A gas supply source that supplies inert gas to the steam generation tank, and a second supply pipe connecting the steam generation tank, A pressure sensor for measuring the pressure inside the steam generation tank, A regulator that adjusts the flow rate of the inert gas supplied to the steam generation tank, Equipped with a controller, The aforementioned controller, A gas supply process that controls the regulator based on the pressure measured by the pressure sensor to adjust the flow rate of the inert gas supplied to the vapor generation tank storing the solvent via the second supply pipe, and stops the supply of the inert gas when the pressure measured by the pressure sensor reaches a target value, After stopping the supply of the inert gas, a steam supply process is performed in which the solvent vapor is supplied from the steam generation tank to the chamber via the first supply pipe. Circuit board processing equipment.

2. The steam generation tank is further equipped with a heating device for heating the inside of the tank. The aforementioned controller, After stopping the supply of the inert gas, a temperature control process is further performed using the heating device to control the temperature inside the steam generation tank. In the steam supply process, the temperature-controlled solvent vapor is supplied from the steam generation tank to the chamber. The substrate processing apparatus according to claim 1.

3. A solvent supply source that supplies the solvent to the steam generation tank, and a third supply pipe connecting the steam generation tank, The steam generation tank is further equipped with an exhaust device for discharging the gas inside the tank to the outside, The aforementioned controller, Further solvent supply processing is performed to supply the solvent to the steam generation tank via the third supply pipe, In the solvent supply process and the gas supply process, the exhaust device is controlled to discharge the gas inside the steam generation tank to the outside. The substrate processing apparatus according to claim 2.

4. The substrate processing apparatus according to claim 3, wherein the controller, in the temperature control process, controls the exhaust device so as not to discharge the gas inside the steam generation tank to the outside.

5. The exhaust device is provided in the exhaust pipe connected to the steam generating tank, The exhaust pipe has a first exhaust port for discharging gas from inside the steam generation tank to the outside, and a second exhaust port for discharging gas from inside the steam generation tank to the outside, and having a smaller opening diameter than the first exhaust port. The substrate processing apparatus according to claim 3 or 4.

6. The substrate processing apparatus according to claim 1, wherein the pressure sensor is provided in the second supply pipe.

7. A substrate processing apparatus for drying a substrate processed with a processing liquid using solvent vapor, comprising: a processing tank for storing the processing liquid; a chamber surrounding the processing tank; a pressure reducing device for reducing the pressure inside the chamber by discharging the gas inside the chamber; a vapor generation tank for storing a solvent and generating solvent vapor as the solvent vapor; a first supply pipe connecting the chamber and the vapor generation tank; a gas supply source for supplying inert gas to the vapor generation tank; a second supply pipe connecting the vapor generation tank and the gas supply source; a pressure sensor for measuring the pressure inside the vapor generation tank; and a regulator for adjusting the flow rate of the inert gas supplied to the vapor generation tank, wherein the substrate processing apparatus comprises: a processing tank for storing the processing liquid; a chamber surrounding the processing tank; a pressure reducing device for reducing the pressure inside the chamber by discharging the gas inside the chamber; and a control method for the substrate processing apparatus, wherein the control method comprises: a substrate processing apparatus for drying a substrate processed with a processing liquid using solvent vapor; A gas supply process that controls the regulator based on the pressure measured by the pressure sensor to adjust the flow rate of the inert gas supplied to the vapor generation tank storing the solvent via the second supply pipe, and stops the supply of the inert gas when the pressure measured by the pressure sensor reaches a target value, The process includes, after stopping the supply of the inert gas, supplying the solvent vapor from the vapor generation tank to the chamber via the first supply pipe. A control method for a substrate processing device.

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