Processing method and method for manufacturing a semiconductor device

Abstract

This technology is advantageous for reducing defects caused by a decrease in flatness in or near the outer periphery of a substrate. [Solution] A processing method for processing a substrate having a first surface in which the outer peripheral portion is lower than the central portion, and for forming a second surface that is flatter than the first surface, includes a film forming step of forming a planarization film on at least the outer peripheral portion by placing a curable composition on the substrate, bringing a SuperStraight into contact with the curable composition, and curing the curable composition, and a CMP step performed before or after the film forming step, wherein the second surface is formed through the film forming step and the CMP step.

Description

Technical Field

[0001] The present invention relates to a processing method and a method for manufacturing a semiconductor device.

Background Art

[0002] In the manufacture of semiconductor devices, a damascene process may be used to form wiring patterns with metals such as copper. In the damascene process, after a metal film is formed so that a trench formed in an interlayer insulating film is filled with metal, in a CMP (Chemical Mechanical Polishing) process, a portion of the metal film covering the interlayer insulating film is removed. At this time, the outer portion of the interlayer insulating film is more easily polished than the central portion, and the flatness of the upper surface of the interlayer insulating film may be reduced.

[0003] Alternatively, in the manufacture of semiconductor devices, after a photoresist film is formed on a substrate for a photolithography process, in order to prevent contamination of the substrate cassette or the like, the photoresist film and the film under it on the outer peripheral portion of the substrate may be removed by etching. Such a process is called an EBR (Edge Bead Removal) process. When the EBR process is performed, the portion removed by the EBR process or the region inside thereof may be inclined in a subsequent planarization process or the like, and the flatness may be reduced. This may cause defective pattern formation in a subsequent process or, when joined to another substrate, a joining defect.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present invention provides an advantageous technique for reducing problems caused by a decrease in flatness in the outer periphery or near the surface of a substrate. [Means for solving the problem]

[0006] One aspect of the present invention relates to a processing method for processing a substrate having a first surface in which the outer peripheral portion is lower than the central portion, and for forming a second surface that is flatter than the first surface, the processing method comprising: a film forming step of forming a planarization film on at least the outer peripheral portion by placing a curable composition on the substrate, contacting the curable composition with Superstraight, and curing the curable composition; and a CMP step performed before or after the film forming step, wherein the second surface is formed through the film forming step and the CMP step. [Effects of the Invention]

[0007] According to the present invention, an advantageous technique is provided for reducing problems caused by a decrease in flatness in the outer peripheral portion or near the outer peripheral portion of the substrate. [Brief explanation of the drawing]

[0008] [Figure 1] A diagram showing one example configuration of a planarization device. [Figure 2] A diagram showing an example of the circuit board configuration. [Figure 3] A schematic cross-sectional view illustrating the processing methods of the first and second embodiments. [Figure 4] A schematic cross-sectional view illustrating the processing method of the first embodiment. [Figure 5] A schematic cross-sectional view illustrating the processing method of the second embodiment. [Figure 6] A schematic cross-sectional view illustrating the processing method of the third embodiment. [Figure 7] A schematic cross-sectional view illustrating the processing method of the third embodiment. [Figure 8] A schematic cross-sectional view illustrating the processing methods of the fourth and fifth embodiments. [Figure 9] A schematic cross-sectional view illustrating the processing method of the fourth embodiment. [Figure 10] Schematic cross-sectional view illustrating the processing method of the fifth embodiment. [Figure 11] Schematic cross-sectional view illustrating the processing methods of the sixth and seventh embodiments. [Figure 12] Schematic cross-sectional view illustrating the processing method of the sixth embodiment. [Figure 13] Schematic cross-sectional view illustrating the processing method of the seventh embodiment. [Figure 14] Schematic cross-sectional view illustrating the processing methods of the eighth and ninth embodiments. [Figure 15] Schematic cross-sectional view illustrating the processing method of the eighth embodiment. [Figure 16] Schematic cross-sectional view illustrating the processing method of the ninth embodiment. [Figure 17] Schematic cross-sectional view illustrating the processing methods of the tenth and eleventh embodiments. [Figure 18] Schematic cross-sectional view illustrating the processing method of the tenth embodiment. [Figure 19] Schematic cross-sectional view illustrating the processing method of the eleventh embodiment. [Figure 20] Schematic cross-sectional view illustrating the processing method of the twelfth embodiment. [Figure 21] Schematic cross-sectional view illustrating the processing method of the twelfth embodiment. [Figure 22] Schematic cross-sectional view illustrating the processing method of the thirteenth embodiment. [Figure 23] Schematic cross-sectional view illustrating the processing method of the thirteenth embodiment. [Figure 24] Schematic cross-sectional view illustrating the processing method of the fourteenth embodiment. [Figure 25] Schematic cross-sectional view illustrating the processing method of the fourteenth embodiment. [Figure 26] Figure illustrating the height distribution of the surface of the substrate after the CMP process. [Figure 27] Illustrating the arrangement of a plurality of shot regions on the substrate. [Figure 28] Schematic cross-sectional view illustrating the processing method of a modified example of the seventh embodiment. [Modes for carrying out the invention]

[0009] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Note that the following embodiments do not limit the invention as defined in the claims. While multiple features are described in the embodiments, not all of these features are essential to the invention, and the features may be combined in any way. Furthermore, in the accompanying drawings, the same or similar configurations are given the same reference numerals, and redundant descriptions are omitted.

[0010] The processing method described below includes a film formation step in which a planarization film is formed by placing a curable composition on a substrate, bringing Superstraight into contact with the curable composition, and curing the curable composition. First, an example of the configuration of a film formation apparatus IAP for forming a planarization film will be described. Figure 1 schematically shows an example of the configuration of a planarization apparatus IAP that can be used to form a planarization film in the film formation step. The planarization apparatus IAP forms a planarization film by IAP (Inkjet Adaptive Planarization) technology. Specifically, the planarization apparatus IAP forms a planarization film on a substrate S using Superstraight SS as a mold having a flat surface. The planarization apparatus IAP can form a planarization film by placing a curable composition CM on the substrate S, bringing Superstraight SS into contact with the curable composition CM, and curing the curable composition SS.

[0011] As the curable composition CM, a composition that hardens when curing energy is applied (sometimes called an uncured resin) is used. The curing energy can be electromagnetic waves, heat, etc. Electromagnetic waves are, for example, infrared, visible light, ultraviolet light, etc., with wavelengths selected from the range of 10 nm to 1 mm. The curable composition CM may also be understood as a composition that hardens by light irradiation or heating. Among these, a photocurable composition that hardens by light contains at least a polymerizable compound and a photopolymerization initiator, and may optionally contain a non-polymerizable compound or a solvent. The non-polymerizable compound is at least one selected from the group consisting of sensitizers, hydrogen donors, internal release agents, surfactants, antioxidants, polymer components, etc. The curable composition CM can be placed on a substrate in droplet form, or as islands or films formed by multiple connected droplets, using a liquid spray head. Alternatively, the curable composition CM may be placed on a substrate as a film using a spin coater or slit coater. The viscosity (viscosity at 25°C) of the curable composition CM is, for example, 1 mPa·s or more and 100 mPa·s or less.

[0012] The planarizing apparatus (IAP) may include a substrate stage WS, which includes a substrate chuck WC for holding a substrate S, and a substrate drive mechanism WSD for driving the substrate stage WS. The planarizing apparatus (IAP) may also include a superstraight drive mechanism SSD for holding and driving a superstraight SS. The substrate drive mechanism WSD and the superstraight drive mechanism SSD constitute a relative drive mechanism that drives at least one of the substrate S and the superstraight SS so that the relative positions of the substrate S and the superstraight SS are adjusted. The adjustment of the relative positions by the relative drive mechanism includes driving for contact of the superstraight SS with the curable composition CM on the substrate S, and for separation of the superstraight SS from the cured product of the curable composition CM. The adjustment of the relative positions by the relative drive mechanism may also include alignment of the substrate S and the superstraight SS. The substrate drive mechanism WSD may be configured to drive the substrate S around a plurality of axes (e.g., three axes: X, Y, and θZ; preferably six axes: X, Y, Z, θX, θY, and θZ). The Super Straight Drive Mechanism SSD can be configured to drive the Super Straight SS along multiple axes (for example, three axes: Z-axis, θX-axis, and θY-axis; preferably six axes: X-axis, Y-axis, Z-axis, θX-axis, θY-axis, and θZ-axis). The Flattening Apparatus (IAP) may include a pressure controller CPC that controls the three-dimensional shape of the Super Straight SS by adjusting the pressure in a sealed space SP formed on the back of the Super Straight SS. By adjusting the pressure in the sealed space SP, the pressure controller CPC can deform the Super Straight into a downward convex shape or flatten it.

[0013] The planarization apparatus IAP may include one or more alignment scopes AS for measuring the alignment error between the substrate S and the superstraight SS. The planarization apparatus IAP may include a curing section CU for curing a curable composition CM to form a planarized film by irradiating the curable composition IM with curing energy through the superstraight SS. The curing section CU may include a light source LS that generates light as curing energy, and an optical system OP that irradiates the curable composition CM on the substrate S with light from the light source LS. The curing section CU may also include an adjustment section BM for adjusting the light irradiation area so that light (curing energy) is irradiated to a predetermined portion of the curable composition CM on the substrate S (a portion located in the peripheral part of the substrate). The adjustment section BM may include, for example, a light-blocking member positioned offset from the image plane (or a plane conjugate to the image plane) of the optical system OP. The distance between the image plane (or a plane conjugate to the image plane) of the optical system OP and the light-blocking member may be determined to adjust the intensity distribution of the light irradiated onto the curable composition CM on the substrate S by the curing section CU. Increasing this distance can increase the width of the transition region between the maximum and minimum light intensity regions on the image plane of the optical system OP, while decreasing this distance can decrease the width of the transition region between the maximum and minimum light intensity regions. The adjustment unit BM may include, for example, a DMD (Digital Mirror Device) that controls the irradiation area or irradiation intensity distribution of light (curing energy). Adjustment of the irradiation intensity distribution can be achieved by time-division control of each mirror constituting the DMD. The DMD may be positioned on a plane conjugate to the image plane of the optical system OP.

[0014] The planarization apparatus IAP may include a dispenser DP for applying or placing a curable composition CM onto a substrate S. The planarization apparatus IAP may include an off-axis scope OAS for detecting the position of alignment marks on the substrate S. The planarization apparatus IAP may include a control unit CNT for controlling each component of the planarization apparatus IAP. The control unit CNT may be an information processing device composed of, for example, a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), a computer with a program installed, or a combination of all or part thereof.

[0015] Figures 2(a) and 2(b) schematically show the structure of the substrate S. Here, Figure 2(a) is a schematic plan view of the surface of the substrate S as seen from the direction normal to it, and Figure 2(b) is a schematic cross-sectional view along the line A-A' in Figure 2(a). The substrate S may have a first surface US1 in which the outer peripheral portion PP is lower than the central portion CP. The outer peripheral portion PP may be an EBR-treated portion, or may include an EBR-treated portion. Alternatively, the outer peripheral portion PP may be a beveled portion. The distance between the boundary BDR between the outer peripheral portion PP and the central portion CP and the outer edge OE of the substrate S may be, for example, in the range of 3 mm to 5 mm. In the example shown in Figure 2(b), there is a clear step between the central portion PP and the outer peripheral portion PP, but the outer peripheral portion PP may be a portion in which the height gradually decreases from the boundary BDR toward the outer edge OE. The first surface US1 may be formed of, for example, an insulator, an interlayer insulating film, or a semiconductor substrate. Note that the cross-sectional views shown in Figures 3 to 19 are schematic cross-sectional views along the line A-A' in Figure 2(a).

[0016] The processing method of this embodiment can process a substrate S having a first surface in which the outer peripheral portion PP is lower than the central portion CP, thereby forming a second surface US2 that is flatter than the first surface US1. The processing method of this embodiment may include a film formation step of forming a planarization film on at least the outer peripheral portion PP by placing a curable composition on the substrate S, contacting the curable composition with Superstraight, and curing the curable composition. The processing method of this embodiment may also include a CMP step performed before or after the film formation step. The second surface US2 can be formed on the substrate S through the film formation step and the CMP step. A second surface US2 that is flatter than the first surface US1 means, for example, that the maximum height difference of the second surface is smaller than the maximum height difference of the first surface.

[0017] The processing method of the first embodiment will be described illustratively below with reference to Figures 3 and 4. First, the preparation step for preparing a substrate S having a first surface US1 in which the outer peripheral portion PP is lower than the central portion CP will be described with reference to Figures 3(a) and 3(b). Unless otherwise specified, the preparation step is not an essential step in the processing method according to the present invention, and the substrate S having a first surface US1 in which the outer peripheral portion PP is lower than the central portion CP may be provided as an object for carrying out the processing method according to the present invention.

[0018] In the process shown in Figure 3(a), a semiconductor substrate S' having an initial first surface US' in which the initial peripheral portion PP' is lower than the initial central portion CP' may be prepared. The semiconductor substrate S' may have one or more trenches TR1 in the central portion CP'. In the process shown in Figure 3(b), an insulating film IF may be formed on the surface US' of the semiconductor substrate S'. The insulating film IF may be formed such that the trenches TR1 are filled with an insulator. The insulating film IF may be formed of, for example, silicon oxide, silicon nitride, or silicon oxynitride. The processes shown in Figures 3(a) and 3(b) prepare a substrate S having a first surface US1 in which the peripheral portion PP is lower than the central portion CP. In this example, the first surface US1 consists of the insulating film IF disposed in the trenches TR1 provided in the semiconductor substrate S' and on the surface of the semiconductor substrate S'.

[0019] The film formation process and the CMP process will be described below. In the first embodiment, the CMP process is performed before the film formation process. Figure 3(c) schematically shows the CMP process. In the CMP process, the insulating film IF is polished. In the CMP process, the surface of the insulating film IF can be well flattened in the central part CP of the substrate S, but in the outer peripheral part PP of the substrate S, the surface of the insulating film IF is not flattened, and an inclined surface that slopes toward the outer edge of the substrate S may be formed. Figure 26 illustrates the height distribution of the surface of the substrate S after the CMP process has been performed on the insulating film IF. PA indicates the center of the substrate S, PB indicates the inner edge position of the inclined surface, and PC indicates the outer edge position of the substrate S. In a substrate S with a diameter of 300 mm, PC-PB may be, for example, about 3 mm to 5 mm. ΔH is the height difference of the inclined surface, and may be, for example, about 3 to 5 μm. When an inclined surface is formed on the outer peripheral portion of the PP, as the subsequent lamination process proceeds, the starting position of the inclination in the layer forming the outermost surface gradually moves inward towards the substrate S, which can cause defects in the lithography process (patterning process). Therefore, in the first embodiment, a film formation process may be performed after the CMP process.

[0020] The film formation process performed after the CMP process will be described below with reference to Figures 3(d), 3(e), 4(a), and 4(b). The aforementioned film formation apparatus IAP may be applied to the film formation process. In the film formation process, a curable composition CM is placed on the surface of the substrate S after the CMP process, and Super Straight SS is brought into contact with the curable composition CM to cure the curable composition CM, thereby forming a planar film PF on at least the outer peripheral portion PP. Specifically, first, in the process shown in Figure 3(d), the curable composition CM may be placed on the surface of the substrate S using a dispenser DP in the film formation apparatus IAP. At this time, the curable composition CM may be placed on the surface of the substrate S in the form of droplets. Next, in the process shown in Figure 3(e), Super Straight SS is brought into contact with the curable composition CM placed on the surface of the substrate S, and the curable composition CM fills the space between the surface of the substrate S and the Super Straight SS.

[0021] Next, in the curing process shown in Figure 4(a), the curable composition CM is cured by irradiating it with curing energy CE using the curing unit CU. At this time, the irradiation area can be adjusted by the adjustment unit BM so that the curing energy CE is irradiated to a portion (a predetermined portion) of the curable composition CM located in the peripheral portion PP on the surface of the substrate S. The adjustment unit BM can adjust the intensity distribution of the curing energy CE irradiated to the curable composition CM. Specifically, for example, the adjustment unit BM irradiates the portion of the curable composition CM on the surface of the substrate S with curing energy CE from the outer edge OE of the substrate S to a predetermined distance D. The predetermined distance D may be greater than the width of the outer peripheral portion PP in the diametrical direction of the substrate S. Alternatively, the predetermined distance D may be less than the width of the outer peripheral portion PP in the diametrical direction of the substrate S. The predetermined distance D may be determined according to the surface shape of the substrate S.

[0022] In other words, the adjustment unit BM can adjust the intensity distribution so that a first intensity of curing energy CE is irradiated onto a first portion P1 of the curable composition CM on the surface of the substrate S, which extends from the outer edge OE of the substrate S to a first distance D1. The adjustment unit BM can also adjust the intensity distribution of the curing energy CE so that the intensity of the second portion P2 of the curable composition CM on the surface of the substrate S, which is located adjacent to the inside of the first portion P1, gradually decreases from the first intensity to the second intensity toward the center of the substrate S. The second intensity is, for example, 0 or an intensity that does not substantially cure the curable composition (the same applies hereafter). After the curing process, the first portion P1 of the curable composition CM on the surface of the substrate S is cured, and the second portion P2 is in a state where the degree of curing gradually decreases toward the center of the substrate S. As a result, a planarization film PF consisting of the cured product of the curable composition CM can be formed on at least the outer peripheral portion PP of the substrate S.

[0023] Next, in the process shown in Figure 4(b), the superstraight SS is separated from the planarization film PF and the uncured curable composition CM. Subsequently, a removal process may be performed to remove the curable composition CM remaining after the curing process. The removal process may include, for example, a wet treatment to dissolve the curable composition CM. Through the above film formation process, the planarization film PF is formed on at least the outer peripheral portion PP of the substrate S. As a result, the second surface US2 is formed by the planarization film PF and the exposed portion of the insulating film IF. The second surface US2 is a flatter surface than the first surface US1.

[0024] Next, in the process shown in Figure 4(c), unwanted insulating film IF (insulator INS) on the surface of the semiconductor substrate S' is removed while leaving the insulating film IF (insulator INS) in the trench TR1. This process may include, for example, a second CMP process. This results in an STI structure in which the trench TR1 is filled with insulator INS.

[0025] Next, the processing method of the second embodiment will be described illustratively with reference to Figures 3 and 5. The second embodiment is a modification of the first embodiment, and in the film formation process of the second embodiment, a planarization film PF is formed on the central portion CP and the outer peripheral portion PP of the substrate S. In other respects, the second embodiment differs from the first embodiment in that the irradiation area of ​​the curing energy to the curable composition CM is such that the curing energy CE can be irradiated onto the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S.

[0026] In the second embodiment, the steps shown in Figures 3(a) to 3(e) may be the same as in the first embodiment. In the second embodiment, after the step shown in Figure 3(e), in the curing step shown in Figure 5(a), the curable composition CM is cured by irradiating the curing energy CE onto the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S with the curing unit CU. In other words, in the second embodiment, in the curing step shown in Figure 5(a), the entire curable composition CM on the substrate S is cured by irradiating the entire curing energy CE onto the curable composition CM on the substrate S with the curing unit CU. As a result, the entire curable composition CM on the substrate S is transformed into a planarization film PF.

[0027] Next, in the step shown in Figure 5(b), the superstraight SS is separated from the planarization film PF. This forms a second surface US2 by the planarization film PF. The second surface US2 is flatter than the first surface US1. Next, in the step shown in Figure 5(c), the unwanted insulating film IF (insulator INS) on the surface of the semiconductor substrate S' is removed while leaving the insulating film IF (insulator INS) in the trench TR1. This step may include, for example, a second CMP step. This results in an STI structure in which the trench TR1 is filled with insulator INS.

[0028] The processing method of the third embodiment will be described illustratively below with reference to Figures 6 and 7. First, with reference to Figure 6(a), a substrate S having a first surface US1 in which the outer peripheral portion PP is lower than the central portion CP will be described. The substrate S may have one or more trenches TR1 in the central portion CP. The substrate S may be composed of a semiconductor substrate S'. Also, the first surface US1 may be composed of a semiconductor substrate S'. In other words, the first surface US1 may be the surface of the semiconductor substrate S'.

[0029] The film formation process and the CMP process will be described below. In the third embodiment, the CMP process is performed after the film formation process. First, the film formation process performed before the CMP process will be described with reference to Figures 6(b), 6(c), 7(a), and 7(b). The aforementioned film formation apparatus IAP may be used for the film formation process. In the film formation process, a curable composition CM is placed on the first surface US1 of the substrate S, and a Super Straight SS is brought into contact with the curable composition CM to cure the curable composition CM, thereby forming a planarized film PF on at least the outer peripheral portion PP. Specifically, first, in the process shown in Figure 6(b), the curable composition CM may be placed on the first surface US1 of the substrate S using a dispenser DP in the film formation apparatus IAP. At this time, the curable composition CM may be placed on the first surface US1 of the substrate S in droplet form. Next, in the process shown in Figure 6(c), the curable composition CM is brought into contact with the curable composition SS placed on the first surface US1 of the substrate S, and the curable composition CM fills the space between the first surface US1 of the substrate S and the superstraight SS.

[0030] Next, in the curing process shown in Figure 7(a), the curable composition CM is cured by irradiating it with curing energy CE using the curing unit CU. At this time, the irradiation area can be adjusted by the adjustment unit BM so that the curing energy CE is irradiated to a portion (a predetermined portion) of the curable composition CM located in the peripheral portion PP on the first surface US1 of the substrate S. The adjustment unit BM can adjust the intensity distribution of the curing energy CE irradiated to the curable composition CM. Specifically, for example, the adjustment unit BM irradiates the portion of the curable composition CM on the first surface US1 of the substrate S with curing energy CE from the outer edge OE of the substrate S to a predetermined distance D. The predetermined distance D may be greater than the width of the outer peripheral portion PP in the diametrical direction of the substrate S. Alternatively, the predetermined distance D may be less than the width of the outer peripheral portion PP in the diametrical direction of the substrate S. The predetermined distance D may be determined according to the surface shape of the first surface US1 of the substrate S.

[0031] In other respects, the adjustment unit BM can adjust the intensity distribution so that a first intensity of curing energy CE is irradiated onto a first portion P1 of the curable composition CM on the first surface US1 of the substrate S, from the outer edge OE to a first distance D1. The adjustment unit BM can also adjust the intensity distribution of curing energy CE so that the intensity of the second portion P2 of the curable composition CM on the first surface US1 of the substrate S, which is located adjacent to the inside of the first portion P1, gradually decreases from the first intensity to the second intensity toward the center of the substrate S. After the curing process, the first portion P1 of the curable composition CM on the first surface US1 of the substrate S is cured, and the second portion P2 is in a state where the degree of curing gradually decreases toward the center of the substrate S. As a result, a planarization film PF made of the cured product of the curable composition CM can be formed on at least the outer peripheral portion PP of the substrate S.

[0032] Next, in the process shown in Figure 7(b), the superstraight SS is separated from the planarization film PF and the uncured curable composition CM. Subsequently, a removal process may be performed to remove the curable composition CM remaining after the curing process. The removal process may include, for example, a wet treatment to dissolve the curable composition CM. The removal process is performed so that the trench TR1 located in the central portion CP is exposed. Through the above film formation process, the planarization film PF is formed on at least the outer peripheral portion PP of the substrate S.

[0033] Next, in the filling process shown in Figure 7(c), an insulating film IF may be formed on the surface US of the substrate S. The insulating film IF may be formed such that the trenches TR1 are filled with an insulator. The insulating film IF may be formed from, for example, silicon oxide, silicon nitride, or silicon oxynitride. Next, in the CMP process shown in Figure 7(d), the insulating film IF (insulator INS) in the trenches TR1 is left intact while the unwanted insulating film IF on the surface of the substrate S (semiconductor substrate S') is polished away. This results in an STI structure in which the trenches TR1 are filled with insulator INS. This forms a second surface US2 between the surface of the planarization film PF and the surface of the substrate S. The second surface US2 is a flatter surface than the first surface US1.

[0034] The processing method of the fourth embodiment will be described illustratively below with reference to Figures 8 and 9. First, the preparation step for preparing a substrate S having a first surface US1 in which the outer peripheral portion PP is lower than the central portion CP will be described with reference to Figures 8(a) and 8(b). Unless otherwise specified, the preparation step is not an essential step in the processing method according to the present invention, and the substrate S having a first surface US1 in which the outer peripheral portion PP is lower than the central portion CP may be provided as an object for carrying out the processing method according to the present invention.

[0035] In the process shown in Figure 8(a), a semiconductor substrate S' having an initial first surface US' in which the initial peripheral portion PP' is lower than the initial central portion CP' may be prepared. The substrate S' may have one or more trenches TR1 in the central portion CP'. In the filling process shown in Figure 8(b), an insulating film IF may be formed on the surface US' of the semiconductor substrate S'. The insulating film IF may be formed such that the trenches TR1 are filled with an insulator. The insulating film IF may be formed of, for example, silicon oxide, silicon nitride, or silicon oxynitride. The processes shown in Figures 8(a) and 8(b) prepare a substrate S having a first surface US1 in which the peripheral portion PP is lower than the central portion CP. In this example, the first surface US1 consists of the insulating film IF placed in the trenches TR1 provided in the semiconductor substrate S' and on the surface of the semiconductor substrate S'.

[0036] The following describes the film formation process performed before the CMP process, with reference to Figures 8(c), 8(d), 9(a), and 9(b). The aforementioned film formation apparatus IAP may be used for the film formation process. In the film formation process, a curable composition CM is placed on the first surface US1 of the substrate S, and Super Straight SS is brought into contact with the curable composition CM to cure the curable composition CM, thereby forming a planar film PF on at least the outer peripheral portion PP. Specifically, first, in the process shown in Figure 8(c), the curable composition CM may be placed on the first surface US1 of the substrate S using a dispenser DP in the film formation apparatus IAP. At this time, the curable composition CM may be placed on the first surface US1 of the substrate S in droplet form. Next, in the process shown in Figure 8(c), Super Straight SS is brought into contact with the curable composition CM placed on the first surface US1 of the substrate S, and the curable composition CM fills the space between the first surface US1 of the substrate S and Super Straight SS.

[0037] Next, in the curing process shown in Figure 9(a), the curable composition CM is cured by irradiating it with curing energy CE using the curing unit CU. At this time, the irradiation area can be adjusted by the adjustment unit BM so that the curing energy CE is irradiated to a portion (a predetermined portion) of the curable composition CM located in the peripheral portion PP on the first surface US1 of the substrate S. The adjustment unit BM can adjust the intensity distribution of the curing energy CE irradiated to the curable composition CM. Specifically, for example, the adjustment unit BM irradiates the portion of the curable composition CM on the first surface US1 of the substrate S with curing energy CE from the outer edge OE of the substrate S to a predetermined distance D. The predetermined distance D may be greater than the width of the outer peripheral portion PP in the diametrical direction of the substrate S. Alternatively, the predetermined distance D may be less than the width of the outer peripheral portion PP in the diametrical direction of the substrate S. The predetermined distance D may be determined according to the surface shape of the first surface US1 of the substrate S.

[0038] In other respects, the adjustment unit BM can adjust the intensity distribution so that a first intensity of curing energy CE is irradiated onto a first portion P1 of the curable composition CM on the first surface US1 of the substrate S, from the outer edge OE to a first distance D1. The adjustment unit BM can also adjust the intensity distribution of curing energy CE so that the intensity of the second portion P2 of the curable composition CM on the first surface US1 of the substrate S, which is located adjacent to the inside of the first portion P1, gradually decreases from the first intensity to the second intensity toward the center of the substrate S. After the curing process, the first portion P1 of the curable composition CM on the first surface US1 of the substrate S is cured, and the second portion P2 is in a state where the degree of curing gradually decreases toward the center of the substrate S. As a result, a planarization film PF made of the cured product of the curable composition CM can be formed on at least the outer peripheral portion PP of the substrate S.

[0039] Next, in the process shown in Figure 9(b), the superstraight SS is separated from the planarization film PF and the uncured curable composition CM. Subsequently, a removal process may be performed to remove the curable composition CM remaining after the curing process. The removal process may include, for example, a wet treatment to dissolve the curable composition CM. Through the above film formation process, the planarization film PF is formed on at least the outer peripheral portion PP of the substrate S.

[0040] Following the film formation process described above, a CMP (Chemical Polishing) process is carried out. Specifically, as shown in Figure 9(c), in the CMP process, the insulating film IF (insulator INS) in the trench TR1 is left intact while any unwanted insulating film IF on the surface of the substrate S (semiconductor substrate S') is polished away. This results in an STI structure in which the trench TR1 is filled with insulator INS. As a result, a second surface US2 is formed by the surface of the planarized film PF and the surface of the substrate S (semiconductor substrate S'). The second surface US2 is a flatter surface than the first surface US1.

[0041] Next, the processing method of the fifth embodiment will be described illustratively with reference to Figures 8 and 10. The fifth embodiment is a modification of the fourth embodiment, and in the film formation process of the fifth embodiment, a planarization film PF is formed on the central portion CP and the outer peripheral portion PP of the substrate S. In other respects, the fifth embodiment differs from the fourth embodiment in that the irradiation area of ​​the curing energy to the curable composition CM is such that the curing energy CE can be irradiated onto the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S.

[0042] In the fifth embodiment, the steps shown in Figures 8(a) to 8(d) may be the same as in the fourth embodiment. In the fifth embodiment, after the step shown in Figure 8(d), in the curing step shown in Figure 10(a), the curable composition CM is cured by irradiating the curing energy CE onto the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S with the curing unit CU. In other words, in the fifth embodiment, in the curing step shown in Figure 10(a), the entire curable composition CM on the substrate S is cured by irradiating the entire curing energy CE onto the curable composition CM on the substrate S with the curing unit CU. As a result, the entire curable composition CM on the substrate S is transformed into a planarization film PF.

[0043] Next, in the process shown in Figure 10(b), the superstraight SS is separated from the planarization film PF. This forms the second surface US2 by the planarization film PF. Through the above film formation process, the planarization film PF is formed on both the central portion CP and the outer peripheral portion PP of the substrate S.

[0044] Following the film formation process described above, a CMP (Chemical Polishing) process is carried out. Specifically, as shown in Figure 10(c), in the CMP process, the insulating film IF (insulator INS) in the trench TR1 is left intact while any unwanted insulating film IF on the surface of the substrate S (semiconductor substrate S') is polished away. This results in an STI structure in which the trench TR1 is filled with insulator INS. As a result, a second surface US2 is formed by the surface of the planarized film PF and the surface of the substrate S. The second surface US2 is a flatter surface than the first surface US1.

[0045] The processing method of the sixth embodiment will be described illustratively below with reference to Figures 11 and 12. First, with reference to Figure 11(a), a substrate S having a first surface US1 in which the outer peripheral portion PP is lower than the central portion CP will be described. The substrate S may be, for example, a substrate that has undergone any of the processing methods of the first to fifth embodiments. The substrate S may have a gate electrode GE disposed on the semiconductor substrate S' via a gate oxide film (not shown). The substrate S may also have an interlayer insulating film IL on the semiconductor substrate S'. The substrate S may have one or more other interlayer insulating films between the semiconductor substrate S' and the interlayer insulating film IL.

[0046] The film formation process and the CMP process will be described below. In the sixth embodiment, the CMP process is performed before the film formation process. Figure 11(b) schematically shows the CMP process. In the CMP process, the interlayer insulating film IL is polished. In the CMP process, the surface of the interlayer insulating film IL can be well planarized in the central portion CP of the substrate S, but in the outer peripheral portion PP of the substrate S, the surface of the interlayer insulating film IL is not planarized, and an inclined surface that slopes toward the outer edge of the substrate S may be formed. In this state, as the subsequent lamination process proceeds, the starting position of the inclination in the layer forming the outermost surface gradually moves toward the inside of the substrate S, which can cause defects in the lithography process (patterning process). Therefore, in the sixth embodiment, the film formation process may be performed after the CMP process.

[0047] The film formation process performed after the CMP process will be described below with reference to Figures 11(c), 11(d), 12(a), 12(b), and 12(c). The aforementioned film formation apparatus IAP may be applied to the film formation process. In the film formation process, a curable composition CM is placed on the surface of the substrate S after the CMP process, and Super Straight SS is brought into contact with the curable composition CM to cure the curable composition CM, thereby forming a planarized film PF on at least the outer peripheral portion PP. Specifically, first, in the process shown in Figure 11(c), the curable composition CM may be placed on the surface of the substrate S using a dispenser DP in the film formation apparatus IAP. At this time, the curable composition CM may be placed on the surface of the substrate S in the form of droplets. Next, in the process shown in Figure 11(d), Super Straight SS is brought into contact with the curable composition CM placed on the surface of the substrate S, and the curable composition CM fills the space between the surface of the substrate S and the Super Straight SS.

[0048] Next, in the curing process shown in Figure 12(a), the curable composition CM is cured by irradiating it with curing energy CE using the curing unit CU. At this time, the irradiation area can be adjusted by the adjustment unit BM so that the curing energy CE is irradiated to a portion (a predetermined portion) of the curable composition CM located in the peripheral portion PP on the surface of the substrate S. The adjustment unit BM can adjust the intensity distribution of the curing energy CE irradiated to the curable composition CM. Specifically, for example, the adjustment unit BM irradiates the portion of the curable composition CM on the surface of the substrate S with curing energy CE from the outer edge OE of the substrate S to a predetermined distance D. The predetermined distance D may be greater than the width of the outer peripheral portion PP in the diametrical direction of the substrate S. Alternatively, the predetermined distance D may be less than the width of the outer peripheral portion PP in the diametrical direction of the substrate S. The predetermined distance D may be determined according to the surface shape of the substrate S.

[0049] In other words, the adjustment unit BM can adjust the intensity distribution so that a first intensity curing energy CE is irradiated onto a first portion P1 of the curable composition CM on the surface of the substrate S, which extends from the outer edge OE of the substrate S to a first distance D1. The adjustment unit BM can also adjust the intensity distribution of the curing energy CE so that the intensity of a second portion P2 of the curable composition CM on the surface of the substrate S, which is located adjacent to the inside of the first portion P1, gradually decreases from the first intensity to the second intensity toward the center of the substrate S. After the curing process, the first portion P1 of the curable composition CM on the surface of the substrate S is cured, and the second portion P2 is in a state where the degree of curing gradually decreases toward the center of the substrate S. As a result, a planarization film PF made of the cured product of the curable composition CM can be formed on at least the outer peripheral portion PP of the substrate S.

[0050] Next, in the process shown in Figure 12(b), the superstraight SS is separated from the planarization film PF and the uncured curable composition CM. Subsequently, a removal process may be performed to remove the curable composition CM remaining after the curing process. The removal process may include, for example, a wet treatment to dissolve the curable composition CM. Through the above film formation process, the planarization film PF is formed on at least the outer peripheral portion PP of the substrate S. As a result, the second surface US2 is formed by the planarization film PF and the exposed portion of the interlayer insulating film IL. The second surface US2 is a flatter surface than the first surface US1.

[0051] Next, a second CMP process may be performed, as shown in Figure 12(c). This yields a new surface that is flatter than the second surface US2. Then, a resist pattern may be formed on the surface of the substrate S by a lithography process. The resist pattern may have openings, for example, for forming contact holes.

[0052] Next, the processing method of the seventh embodiment will be described illustratively with reference to Figures 11 and 13. The seventh embodiment is a modification of the sixth embodiment, and in the film formation process of the seventh embodiment, a planarization film PF is formed on the central portion CP and the outer peripheral portion PP of the substrate S. In other respects, the seventh embodiment differs from the sixth embodiment in that the irradiation area of ​​the curing energy to the curable composition CM is such that the curing energy CE can be irradiated onto the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S.

[0053] In the seventh embodiment, the steps shown in Figures 11(a) to 11(d) may be the same as in the sixth embodiment. In the seventh embodiment, after the step shown in Figure 11(d), in the curing step shown in Figure 13(a), the curable composition CM is cured by irradiating the curing energy CE onto the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S with the curing unit CU. In other words, in the seventh embodiment, in the curing step shown in Figure 13(a), the entire curable composition CM on the substrate S is cured by irradiating the entire curable composition CM with curing energy CE with the curing unit CU. As a result, the entire curable composition CM on the substrate S is transformed into a planarization film PF.

[0054] Next, in the process shown in Figure 13(b), the superstraight SS is separated from the planarization film PF. This forms the second surface US2 by the planarization film PF. Through the above film formation process, the planarization film PF is formed on both the central portion CP and the outer peripheral portion PP of the substrate S.

[0055] A second CMP (Chemical Modulation) step may be performed after the above film formation steps. This will yield a new surface that is flatter than the second surface US2. Next, a resist pattern may be formed on the surface of the substrate S by a lithography step. The resist pattern may have openings for forming contact holes, for example.

[0056] It should be noted that the super-straight SS does not necessarily have to be flat. The super-straight SS may have a shape that slopes away from the substrate S as it approaches the outer edge of the substrate S, for example, as shown in Figure 28. The angle θ of this slope can be in the range of 1 to 10° with respect to the plane to which the central part of the super-straight SS belongs. In this case, the curable composition CM may be more (thicker) in the position overlapping with the outer peripheral portion PP than in the position overlapping with the central part of the substrate S. By irradiating with curing energy CE, the planarization film PF will be formed thicker in the position overlapping with the outer peripheral portion PP than in the position overlapping with the central part of the substrate S. In the subsequent CMP process, the planarization film PF may be removed more in the position overlapping with the outer peripheral portion PP than in the position overlapping with the central part of the substrate S. In such a case, as shown in Figure 28(c), the planarization film PF in the position overlapping with the outer peripheral portion PP is removed more by the CMP process than the planarization film PF overlapping with the central part of the substrate S, thereby obtaining a structure with high flatness. In this way, by giving the super straight SS a tapered shape, it is possible to improve the flatness of the substrate S after the CMP process.

[0057] The processing method of the eighth embodiment will be described illustratively below with reference to Figures 14 and 15. First, with reference to Figure 14(a), a substrate S having a first surface US1 in which the outer peripheral portion PP is lower than the central portion CP will be described. The substrate S may be, for example, a substrate that has undergone the processing methods of the first to fifth embodiments. The substrate S may have a gate electrode (not shown) disposed on the semiconductor substrate S' via a gate oxide film (not shown). The substrate S may also have a plurality of interlayer insulating films such as interlayer insulating films IL-1, IL-2, etc. on the semiconductor substrate S'. The substrate S may have one or more other interlayer insulating films between the semiconductor substrate S and the interlayer insulating film IL-1. The substrate S may also have wiring patterns WP, contact plugs, and via plugs between the plurality of interlayer insulating films. In the example shown in Figure 14, the first surface US1 of the substrate S has irregularities due to the presence of the wiring patterns WP.

[0058] The film formation process and the CMP process will be described below. In the eighth embodiment, the CMP process is performed before the film formation process. Figure 14(b) schematically shows the CMP process. In the CMP process, the interlayer insulating film IL-2 is polished. In the CMP process, the surface of the interlayer insulating film IL-2 can be well planarized in the central portion CP of the substrate S, but in the outer peripheral portion PP of the substrate S, the surface of the interlayer insulating film IL-2 is not planarized, and an inclined surface that slopes toward the outer edge of the substrate S may be formed. In this state, as the subsequent lamination process proceeds, the starting position of the inclination in the layer forming the outermost surface gradually moves toward the inside of the substrate S, which can cause defects in the lithography process (patterning process). Therefore, in the eighth embodiment, the film formation process may be performed after the CMP process.

[0059] The film formation process performed after the CMP process will be described below with reference to Figures 14(c), 14(d), 15(a), and 15(b). The aforementioned film formation apparatus IAP may be applied to the film formation process. In the film formation process, a curable composition CM is placed on the surface of the substrate S after the CMP process, and Super Straight SS is brought into contact with the curable composition CM to cure the curable composition CM, thereby forming a planarized film PF on at least the outer peripheral portion PP. Specifically, first, in the process shown in Figure 14(c), the curable composition CM may be placed on the surface of the substrate S using a dispenser DP in the film formation apparatus IAP. At this time, the curable composition CM may be placed on the surface of the substrate S in the form of droplets. Next, in the process shown in Figure 14(d), Super Straight SS is brought into contact with the curable composition CM placed on the surface of the substrate S, and the curable composition CM fills the space between the surface of the substrate S and the Super Straight SS.

[0060] Next, in the curing process shown in Figure 15(a), the curable composition CM is cured by irradiating it with curing energy CE using the curing unit CU. At this time, the irradiation area can be adjusted by the adjustment unit BM so that the curing energy CE is irradiated to a portion (a predetermined portion) of the curable composition CM located in the peripheral portion PP on the surface of the substrate S. The adjustment unit BM can adjust the intensity distribution of the curing energy CE irradiated to the curable composition CM. Specifically, for example, the adjustment unit BM irradiates the portion of the curable composition CM on the surface of the substrate S with curing energy CE from the outer edge OE of the substrate S to a predetermined distance D. The predetermined distance D may be greater than the width of the outer peripheral portion PP in the diametrical direction of the substrate S. Alternatively, the predetermined distance D may be less than the width of the outer peripheral portion PP in the diametrical direction of the substrate S. The predetermined distance D may be determined according to the surface shape of the substrate S.

[0061] In other words, the adjustment unit BM can adjust the intensity distribution so that a first intensity curing energy CE is irradiated onto a first portion P1 of the curable composition CM on the surface of the substrate S, which extends from the outer edge OE of the substrate S to a first distance D1. The adjustment unit BM can also adjust the intensity distribution of the curing energy CE so that the intensity of a second portion P2 of the curable composition CM on the surface of the substrate S, which is located adjacent to the inside of the first portion P1, gradually decreases from the first intensity to the second intensity toward the center of the substrate S. After the curing process, the first portion P1 of the curable composition CM on the surface of the substrate S is cured, and the second portion P2 is in a state where the degree of curing gradually decreases toward the center of the substrate S. As a result, a planarization film PF made of the cured product of the curable composition CM can be formed on at least the outer peripheral portion PP of the substrate S.

[0062] Next, in the process shown in Figure 15(b), the superstraight SS is separated from the planarization film PF and the uncured curable composition CM. Subsequently, a removal process may be performed to remove the curable composition CM remaining after the curing process. The removal process may include, for example, a wet treatment to dissolve the curable composition CM. Through the above film formation process, the planarization film PF is formed on at least the outer peripheral portion PP of the substrate S. As a result, the second surface US2 is formed by the planarization film PF and the exposed portion of the interlayer insulating film IL-2. The second surface US2 is a flatter surface than the first surface US1.

[0063] Next, a second CMP process may be performed, as shown in Figure 15(c). This yields a new surface that is flatter than the second surface US2. Then, a resist pattern may be formed on the substrate S by a photolithography process. The resist pattern may have openings for forming contact holes, for example. Alternatively, the resist pattern may have openings for forming trenches for embedding a metal pattern in the interlayer insulating film IL-2.

[0064] Next, the processing method of the ninth embodiment will be described illustratively with reference to Figures 14 and 16. The ninth embodiment is a modification of the eighth embodiment, and in the film formation process of the ninth embodiment, a planarization film PF is formed on the central portion CP and the outer peripheral portion PP of the substrate S. In another respect, the ninth embodiment differs from the eighth embodiment in that the irradiation area of ​​the curing energy to the curable composition CM is such that the curing energy CE can be irradiated onto the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S.

[0065] In the ninth embodiment, the steps shown in Figures 14(a) to 14(d) may be the same as in the eighth embodiment. In the ninth embodiment, after the step shown in Figure 14(d), in the curing step shown in Figure 16(a), the curable composition CM is cured by irradiating the curing energy CE onto the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S with the curing unit CU. In other words, in the ninth embodiment, in the curing step shown in Figure 16(a), the entire curable composition CM on the substrate S is cured by irradiating the entire curable composition CM with curing energy CE with the curing unit CU. As a result, the entire curable composition CM on the substrate S is transformed into a planarization film PF.

[0066] Next, in the process shown in Figure 16(b), the superstraight SS is separated from the planarization film PF. This forms the second surface US2 by the planarization film PF. Through the above film formation process, the planarization film PF is formed on both the central portion CP and the outer peripheral portion PP of the substrate S.

[0067] A second CMP (Chemical Modulation) step may be performed after the above film formation steps. This will yield a new surface that is flatter than the second surface US2. Next, a resist pattern may be formed on the surface of the substrate S by a lithography step. The resist pattern may have openings for forming contact holes, for example.

[0068] The processing method of the tenth embodiment will be described illustratively below with reference to Figures 17 and 18. First, with reference to Figure 17(a), a substrate S having a first surface US1 in which the outer peripheral portion PP is lower than the central portion CP will be described. The substrate S may be, for example, a substrate that has undergone any of the processing methods of the first to fifth embodiments. The substrate S may have a gate electrode (not shown) disposed on the semiconductor substrate S' via a gate oxide film (not shown). The substrate S may also have a plurality of interlayer insulating films such as interlayer insulating films IL-1, IL-2, etc. on the semiconductor substrate S'. The substrate S may have one or more other interlayer insulating films between the semiconductor substrate S and the interlayer insulating film IL-1. The substrate S may also have wiring patterns WP, contact plugs, and via plugs between the plurality of interlayer insulating films. In the example shown in Figure 17, the first surface US1 of the substrate S has irregularities due to the presence of the wiring patterns WP, and may also have a slope in the outer peripheral portion PP.

[0069] The film formation process and the CMP process will be described below. In the tenth embodiment, the CMP process is performed after the film formation process. First, the film formation process performed before the CMP process will be described with reference to Figures 17(b), 17(c), 18(a), and 18(b). The aforementioned film formation apparatus IAP may be used for the film formation process. In the film formation process, a curable composition CM is placed on the first surface US1 of the substrate S, and a Super Straight SS is brought into contact with the curable composition CM to cure the curable composition CM, thereby forming a planarized film PF on at least the outer peripheral portion PP. Specifically, first, in the process shown in Figure 17(b), the curable composition CM may be placed on the first surface US1 of the substrate S using a dispenser DP in the film formation apparatus IAP. At this time, the curable composition CM may be placed on the first surface US1 of the substrate S in droplet form. Next, in the step shown in Figure 17(c), the curable composition CM is brought into contact with the curable composition SS placed on the first surface US1 of the substrate S, and the curable composition CM fills the space between the first surface US1 of the substrate S and the superstraight SS.

[0070] Next, in the curing process shown in Figure 18(a), the curable composition CM is cured by irradiating it with curing energy CE using the curing unit CU. At this time, the irradiation area can be adjusted by the adjustment unit BM so that the curing energy CE is irradiated to a portion (a predetermined portion) of the curable composition CM located in the peripheral portion PP on the first surface US1 of the substrate S. The adjustment unit BM can adjust the intensity distribution of the curing energy CE irradiated to the curable composition CM. Specifically, for example, the adjustment unit BM irradiates the portion of the curable composition CM on the first surface US1 of the substrate S with curing energy CE from the outer edge OE of the substrate S to a predetermined distance D. The predetermined distance D may be greater than the width of the outer peripheral portion PP in the diametrical direction of the substrate S. Alternatively, the predetermined distance D may be less than the width of the outer peripheral portion PP in the diametrical direction of the substrate S. The predetermined distance D may be determined according to the surface shape of the first surface US1 of the substrate S.

[0071] In other respects, the adjustment unit BM can adjust the intensity distribution so that a first intensity of curing energy CE is irradiated onto a first portion P1 of the curable composition CM on the first surface US1 of the substrate S, from the outer edge OE to a first distance D1. The adjustment unit BM can also adjust the intensity distribution of curing energy CE so that the intensity of the second portion P2 of the curable composition CM on the first surface US1 of the substrate S, which is located adjacent to the inside of the first portion P1, gradually decreases from the first intensity to the second intensity toward the center of the substrate S. After the curing process, the first portion P1 of the curable composition CM on the first surface US1 of the substrate S is cured, and the second portion P2 is in a state where the degree of curing gradually decreases toward the center of the substrate S. As a result, a planarization film PF made of the cured product of the curable composition CM can be formed on at least the outer peripheral portion PP of the substrate S.

[0072] Next, in the process shown in Figure 18(b), the superstraight SS is separated from the planarization film PF and the uncured curable composition CM. Subsequently, a removal process may be performed to remove the curable composition CM remaining after the curing process. The removal process may include, for example, a wet treatment to dissolve the curable composition CM. The removal process is performed so as to expose the interlayer insulating film IL-2. Through the above film formation process, the planarization film PF is formed on at least the outer peripheral portion PP of the substrate S.

[0073] Next, as shown in Figure 18(c), a CMP process is carried out so that the surface composed of the interlayer insulating film IL-2 and the planarization film PF is planarized. A second surface US2 is formed by the surface of the interlayer insulating film IL-2 and the planarization film PF. The second surface US2 is a flatter surface than the first surface US1.

[0074] Next, the processing method of the 11th embodiment will be described illustratively with reference to Figures 17 and 19. The 11th embodiment is a modification of the 10th embodiment, and in the film formation step of the 11th embodiment, a planarization film PF is formed on the central portion CP and the outer peripheral portion PP of the substrate S. In another respect, the 11th embodiment differs from the 4th embodiment in that the irradiation area of ​​the curing energy to the curable composition CM is such that the curing energy CE can be irradiated onto the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S.

[0075] In the 11th embodiment, the steps shown in Figures 17(a) to 17(c) may be the same as in the 10th embodiment. In the 11th embodiment, after the step shown in Figure 17(c), in the curing step shown in Figure 19(a), the curable composition CM is cured by irradiating the curing energy CE onto the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S with the curing unit CU. In other words, in the 11th embodiment, in the curing step shown in Figure 19(a), the entire curable composition CM on the substrate S is cured by irradiating the entire curable composition CM with curing energy CE with the curing unit CU. As a result, the entire curable composition CM on the substrate S is transformed into a planarization film PF. Next, in the step shown in Figure 11(b), the superstraight SS is separated from the planarization film PF. Through the above film formation steps, a planarization film PF is formed on both the central portion CP and the outer peripheral portion PP of the substrate S.

[0076] Following the film formation process described above, a CMP (Chemical Polishing) process is carried out. Specifically, as shown in Figure 19(c), in the CMP process, the planarization film PF is first polished, and then the interlayer insulating film IL-2 is polished together with the planarization film PF. As a result, a second surface US2 is formed by the surface of the planarization film PF and the surface of the interlayer insulating film IL-2. The second surface US2 is a flatter surface than the first surface US1.

[0077] The twelfth embodiment will be described illustratively below. First, the arrangement of multiple shot regions on the substrate S will be described illustratively with reference to Figure 27. Unpatterned rectangles represent shot regions called full-field FFs, and diagonally lined rectangles represent shot regions called partial-field PFs. A full-field FF is a shot region whose entirety is contained within the inner edge of the outer peripheral portion PP. A partial-field PF is a shot region whose outer edge is defined by the outer peripheral portion PP. In a process in which one shot region includes multiple chip regions, even partial fields can be used for device (chip) manufacturing if they are not defined by the outer peripheral portion PP. On the other hand, in a process in which one shot region consists of one chip region, for example, in a process for manufacturing a full-size (full-frame) image sensor, partial fields are not used. Hereinafter, partial fields that are not used for device manufacturing will be referred to as unused partial fields.

[0078] In the exposure process of lithography, if unused partial fields are not exposed, for example, when using a negative-type photoresist, no resist film remains on the unused partial fields after the development process. Consequently, in the subsequent etching process, the entire area of ​​the layer to be processed is etched in the partial fields, which can reduce the flatness of the substrate surface. Therefore, normally, unused partial fields are also exposed in the exposure process, and a resist pattern is formed after the development process.

[0079] In damascene processes, there is a concern that filling trenches formed in the interlayer insulating film of such partial fields with metal will contaminate the FOUP (Front Opening Unified Pod) and downstream equipment with metal. Therefore, it is desirable not to form a metal film in the partial field in damascene processes. Figures 20 to 25, referenced below, are schematic cross-sectional views along the line B-B' in Figure 27.

[0080] The processing method of the twelfth embodiment will be described illustratively below with reference to Figures 20 and 21. First, with reference to Figure 20(a), a substrate S having a first surface US1 in which the outer peripheral portion PP is lower than the central portion CP will be described. The substrate S may be, for example, a substrate that has undergone any of the processing methods of the first to fifth embodiments. The substrate S may have a gate electrode (not shown) disposed on a semiconductor substrate (not shown) via a gate oxide film (not shown). The substrate S may also have a plurality of interlayer insulating films such as interlayer insulating films IL-1, IL-2, IL-3 disposed on the semiconductor substrate (not shown). The substrate S may have one or more other interlayer insulating films between the semiconductor substrate (not shown) and the interlayer insulating film IL-1. In this example, the substrate S has a central portion CP and a peripheral portion PP, and the central portion CP has a full-field FF and a partial-field PF. The interlayer insulating film IL-3 has one or more trenches TR2 disposed on the full-field FF. The trenches TR2 are used to form wiring patterns. The interlayer film IL-3 also has one or more dummy trenches TRD located in the partial field PF. The dummy trenches TRD may be formed by a lithography process using a reticle (master plate) for forming trenches TR2 in the full field FF. In other words, the interlayer film IL-3 may include one or more trenches TR2 located in the central portion CP (of the full field FF), as well as dummy trenches TRD located in the outer region (partial field PF) of the central portion CP. In a single damascene process, the interlayer films IL-1 and IL-2 may have via plugs VP facing the trenches TR2 in the full field FF. In a dual damascene process, the interlayer films IL-1 and IL-2 may have via holes for forming via plugs VP so as to communicate with the trenches TR2 in the full field FF.

[0081] The film formation process and the CMP process will be described below. In the 12th embodiment, the CMP process is performed after the film formation process, or more specifically, after the film formation process and the metal film formation process. First, the film formation process will be described with reference to Figures 20(b), 20(c), 20(d), and 21(a). The aforementioned film formation apparatus IAP may be applied to the film formation process. In the film formation process, a curable composition CM is placed on the first surface US1 of the substrate S, and a Super Straight SS is brought into contact with the curable composition CM to cure the curable composition CM. As a result, a planarization film PF is formed on the partial field PF of the central portion CP, in addition to the outer peripheral portion PP. Specifically, first, in the process shown in Figure 20(b), the curable composition CM may be placed on the first surface US1 of the substrate S using a dispenser DP in the film formation apparatus IAP. At this time, the curable composition CM may be placed on the first surface US1 of the substrate S in the form of a liquid droplet. Next, in the step shown in Figure 20(c), the curable composition CM is brought into contact with the curable composition SS placed on the first surface US1 of the substrate S, and the curable composition CM fills the space between the first surface US1 of the substrate S and the superstraight SS.

[0082] Next, in the curing process shown in Figure 20(d), the curable composition CM is cured by irradiating it with curing energy CE using the curing unit CU. At this time, the irradiation area can be adjusted by the adjustment unit BM so that the curing energy CE is irradiated to the portion of the curable composition CM located in the partial field PF of the peripheral portion PP and the central portion CP on the first surface US1 of the substrate S.

[0083] Next, in the process shown in Figure 21(a), the superstraight SS is separated from the planarization film PF and the uncured curable composition CM. Subsequently, a removal process may be performed to remove the curable composition CM remaining after the curing process. The removal process may include, for example, a wet treatment to dissolve the curable composition CM. The removal process is performed so that the bottom of the trench TR1 is exposed. Through the above film formation process, the planarization film PF is formed on the partial field PF of the central portion CP as well as the outer peripheral portion PP of the substrate S.

[0084] Next, as shown in Figure 21(b), a metal film MF is formed on the interlayer insulating film IL-3 so that the trench TR2 is filled with metal.

[0085] Next, as shown in Figure 21(c), a CMP process is carried out so that the upper surface of the interlayer insulating film IL-3 is exposed. The second surface US2 is formed by the surface of the interlayer insulating film IL-3, the surface of the metal film MF, and the surface of the planarization film PF. The second surface US2 is a flatter surface than the first surface US1. The metal film MF (metal) filled in the trench TR2 constitutes the wiring pattern.

[0086] The processing method of the 13th embodiment will be described illustratively below with reference to Figures 22 and 23. The 13th embodiment provides an advantageous processing method for forming a trench TR2 in the full field FF without forming a dummy trench TRD in the partial field PF.

[0087] In the process shown in Figure 22(a), a resist pattern RP can be formed by a lithography process on a substrate S on which multiple interlayer insulating films such as interlayer insulating films IL-1, IL-2, and IL-3 are arranged on a semiconductor substrate (not shown). The resist pattern RP may have an opening OPT for forming a trench TR2 in the interlayer insulating film IL-3, and a dummy opening OPD for forming a dummy trench TRD.

[0088] Next, a film formation process can be carried out as shown in Figures 22(b), 22(c), 23(a), and 23(b). First, in the process shown in Figure 22(b), the curable composition CM can be placed on the resist pattern RP and the exposed portion of the substrate S using a dispenser DP in the film formation apparatus IAP. Next, in the process shown in Figure 22(c), the curable composition CM is brought into contact with the superstraight SS, and the curable composition CM fills the space between the resist pattern RP and the exposed portion of the substrate S and the superstraight SS.

[0089] Next, in the curing process shown in Figure 23(a), the curable composition CM is cured by irradiating it with curing energy CE using the curing unit CU. At this time, the irradiation area can be adjusted by the adjustment unit BM so that the curing energy CE is irradiated to the portion of the curable composition CM located in the partial field PF of the peripheral portion PP and the central portion CP.

[0090] Next, in the process shown in Figure 23(b), the superstraight SS is separated from the planarization film PF and the uncured curable composition CM. Subsequently, a removal process may be performed to remove the curable composition CM remaining after the curing process. The removal process may include, for example, a wet treatment to dissolve the curable composition CM. The removal process is performed so that the bottom of the opening OPT is exposed. Through the above film formation process, the dummy opening OPD and the outer peripheral portion PP of the substrate S are covered with the planarization film PF. In this state, by etching the interlayer insulating film IL-3 through the opening OPT, a trench TR2 can be formed in the full field FF without forming a dummy trench TRD in the partial field PF.

[0091] The processing method of the 14th embodiment will be described illustratively below with reference to Figures 24 and 25. The 14th embodiment provides an advantageous processing method for forming a protective film that protects the outer peripheral portion PP of a substrate S on which a resist pattern RP has been formed and which has undergone EBR processing.

[0092] In the process shown in Figure 24(a), a resist pattern RP is formed on the substrate S, and the substrate S is prepared after EBR treatment. A film formation process can be carried out as shown in Figures 24(b), 24(c), 25(a), 25(b), and 25(c). First, in the process shown in Figure 24(b), a curable composition CM may be placed on the resist pattern RP and the exposed portion of the substrate S using a dispenser DP in a film formation apparatus IAP. Next, in the process shown in Figure 24(c), a superstraight SS is brought into contact with the curable composition CM, and the curable composition CM fills the space between the resist pattern RP and the exposed portion of the substrate S and the superstraight SS.

[0093] Next, in the curing process shown in Figure 25(a), the curable composition CM is cured by irradiating it with curing energy CE using the curing unit CU, thereby forming a protective film PRF. At this time, the irradiation area can be adjusted by the adjustment unit BM so that the curing energy CE is irradiated to the peripheral portion PP of the curable composition CM.

[0094] Next, in the step shown in Figure 25(b), the superstraight SS is separated from the planarized film PF and the uncured curable composition CM. Subsequently, a removal step may be performed to remove the curable composition CM remaining after the curing step. The removal step may include, for example, a wet treatment to dissolve the curable composition CM. Through the above film formation steps, a protective film PRF is formed to protect the outer peripheral portion PP.

[0095] Furthermore, EBR treatment is performed to prevent particle generation caused by the resist pattern RP coming into contact with FOUP, etc. Therefore, the protective film PRF is formed from a curable composition that generates fewer particles than the constituent materials of the resist pattern PR.

[0096] The following describes another embodiment of a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device may include a first processing step of processing a substrate by any processing method of the first to fourteenth embodiments, or any combination thereof, and a second processing step of further processing the substrate after the first processing step to obtain a semiconductor device. The second processing step may include, for example, at least one of a dicing step, a sealing step, and a bonding step with another substrate. If the first processing step includes a step of forming an STI, the second processing step may include, for example, a step of forming a transistor, a step of forming an interlayer insulating film, a step of forming a wiring pattern, and so on.

[0097] Furthermore, in each of the embodiments described above, in the step of irradiating the curable composition CM with curing energy CE using Super Straight SS, a first gas may be supplied to the outer periphery of the substrate S and a second gas to the central part of the substrate S. In this case, the oxygen concentration of the first gas may be higher than that of the second gas. When the curable composition CM hardens, radicals generated by irradiation with exposure light photopolymerize the curable composition CM, leading to hardening. However, since the generated radicals have the property of being trapped by oxygen, the progress of the photopolymerization reaction can be suppressed in an oxygen atmosphere. By utilizing this property and supplying the first gas to the outer periphery of the substrate S, the hardening of the curable composition CM that has leaked outside of the Super Straight SS can be reduced. This allows the unhardened curable composition CM remaining after separating the Super Straight SS from the planarization film PF to be volatilized. As a result, even if there is curable composition CM that has leaked outside of the Super Straight SS, it can be suitably removed by subsequent volatilization. In particular, as described in the 14th embodiment, contamination of the FOUP can be reduced by allowing the uncured curable composition CM to volatilize sufficiently before storing it in the FOUP or the like.

[0098] For information on how to control the curing of the curable composition CM using a first gas and a second gas, and for specific methods of supplying the first gas and the second gas, please refer to Japanese Patent Publication No. 2024-29829. Furthermore, the materials used for the curable composition CM can be those described in, for example, Japanese Patent Publication No. 2022-188736.

[0099] This specification and accompanying drawings include the following disclosures: (Item 1) A processing method for a substrate having a first surface in which the outer periphery is lower than the central portion, and for forming a second surface that is flatter than the first surface, A film formation step comprising: placing a curable composition on the substrate; contacting the curable composition with SuperStraight; and curing the curable composition to form a planar film on at least the outer peripheral portion; The process includes a CMP process performed before or after the film formation process, A processing method characterized in that the second surface is formed through the aforementioned film formation step and the aforementioned CMP step. (Item 2) The film formation step includes a curing step of irradiating curing energy onto a portion of the curable composition on the first surface from the outer edge of the substrate to a predetermined distance. The processing method described in item 1, characterized by the following: (Item 3) The predetermined distance is greater than the width of the outer peripheral portion in the diametrical direction of the substrate. The processing method described in item 2, characterized by the following: (Item 4) The film formation step includes a curing step in which a first portion of the curable composition on the first surface, extending from the outer edge of the substrate to a first distance, is irradiated with curing energy of a first intensity, and a second portion, positioned adjacent to the inside of the first portion, is irradiated with curing energy such that the intensity gradually decreases from the first intensity to the second intensity toward the center of the substrate. The processing method described in item 1, characterized by the following: (Item 5) The film formation step includes a removal step to remove the curable composition remaining after the curing step. The processing method according to any one of items 2 to 4, characterized by the following: (Item 6) The CMP process is performed before the film formation process. The processing method according to any one of items 1 to 5, characterized by the following: (Item 7) The first surface is made of an insulator. The processing method described in item 6, characterized by the following: (Item 8) The substrate includes a semiconductor substrate, The first surface is composed of an insulator placed in a trench provided in the semiconductor substrate and on the surface of the semiconductor substrate. The processing method described in item 6, characterized by the following: (Item 9) The substrate includes a semiconductor substrate, The first surface is composed of an interlayer insulating film disposed on the semiconductor substrate. The processing method described in item 6, characterized by the following: (Item 10) In the film formation step, the planarized film is formed on the central portion and the outer peripheral portion. The processing method described in item 1, characterized by the following: (Item 11) The process further includes a second CMP step performed after the film formation step, The processing method according to item 10, characterized by the following: (Item 12) The CMP process is performed after the film formation process. The processing method according to any one of items 1 to 5, characterized by the following: (Item 13) The substrate includes a semiconductor substrate, The aforementioned first surface is made up of the semiconductor substrate. The processing method described in item 12, characterized by the following: (Item 14) The substrate includes a semiconductor substrate, The first surface includes a trench provided in the semiconductor substrate. After the film formation step and before the CMP step, the trench is filled with an insulator. The processing method described in item 12, characterized by the following: (Item 15) The substrate includes a semiconductor substrate, The first surface is composed of an insulator placed in a trench provided in the semiconductor substrate and on the surface of the semiconductor substrate. The processing method described in item 12, characterized by the following: (Item 16) The substrate includes a semiconductor substrate, The first surface is composed of an interlayer insulating film disposed on the semiconductor substrate. The processing method described in item 12, characterized by the following: (Item 17) The substrate includes a semiconductor substrate, The first surface is composed of an interlayer insulating film disposed on the semiconductor substrate, and the interlayer insulating film has a trench located in the central portion. After the film formation step and before the CMP step, a metal film is formed on the interlayer insulating film such that the trench is filled with metal. The processing method described in item 12, characterized by the following: (Item 18) The interlayer insulating film includes, in addition to the trench, a dummy trench located in the outer region of the central portion. In the film formation step, the planarization film is formed not only on the outer peripheral portion but also on the dummy trench. The processing method described in item 17, characterized by the following: (Item 19) The process of forming a resist pattern on a substrate, A film formation step is to form a protective film on at least the outer periphery of the substrate by placing a curable composition on the substrate, bringing SuperStraight into contact with the curable composition, and curing the curable composition. An etching step for etching the substrate that has undergone the film formation step, A processing method characterized by including the following. (Item 20) The substrate has an interlayer insulating film, The resist pattern has openings for forming trenches in the interlayer insulating film. In the etching process, the trench is formed in the interlayer insulating film. The processing method described in item 19, characterized by the following: (Item 21) The resist pattern includes a dummy opening. In the film formation step, the protective film is formed on the outer peripheral portion of the substrate as well as on the dummy opening. The processing method described in item 20, characterized by the following: (Item 22) A first processing step in which the substrate is processed by the processing method described in any one of items 1 to 21, A second processing step involves further processing the substrate that has undergone the first processing step to obtain a semiconductor device, A method for manufacturing a semiconductor device, characterized by including [the necessary components]. (others) The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention. [Explanation of symbols]

[0100] PP: Peripheral part, CP: Central part, US1: First surface, US2: Second surface, S: Substrate, CM: Curable composition, PF: Flattening film

Claims

1. A processing method for a substrate having a first surface in which the outer periphery is lower than the central portion, and for forming a second surface that is flatter than the first surface, A film formation step comprising: placing a curable composition on the substrate; contacting the curable composition with SuperStraight; and curing the curable composition to form a planar film on at least the outer peripheral portion; The process includes a CMP step performed before or after the film formation step, A processing method characterized in that the second surface is formed through the film formation step and the CMP step.

2. The film formation step includes a curing step of irradiating curing energy onto a portion of the curable composition on the first surface from the outer edge of the substrate to a predetermined distance. The processing method according to feature 1.

3. The predetermined distance is greater than the width of the outer peripheral portion in the diametrical direction of the substrate. The processing method according to feature 2.

4. The film formation step includes a curing step in which a first portion of the curable composition on the first surface, extending from the outer edge of the substrate to a first distance, is irradiated with curing energy of a first intensity, and a second portion, positioned adjacent to the inside of the first portion, is irradiated with curing energy such that the intensity gradually decreases from the first intensity to the second intensity toward the center of the substrate. The processing method according to feature 1.

5. The film formation step includes a removal step to remove the curable composition remaining after the curing step. The processing method according to feature 2.

6. The CMP process is performed before the film formation process. The processing method according to feature 1.

7. The first surface is made of an insulator. The processing method according to feature 6.

8. The substrate includes a semiconductor substrate, The first surface is composed of an insulator placed in a trench provided in the semiconductor substrate and on the surface of the semiconductor substrate. The processing method according to feature 6.

9. The substrate includes a semiconductor substrate, The first surface is composed of an interlayer insulating film disposed on the semiconductor substrate. The processing method according to feature 6.

10. In the film formation step, the planarized film is formed on the central portion and the outer peripheral portion. The processing method according to feature 1.

11. The process further includes a second CMP step performed after the film formation step, The processing method according to feature 10.

12. The CMP process is performed after the film formation process. The processing method according to feature 1.

13. The substrate includes a semiconductor substrate, The first surface is made of the semiconductor substrate. The processing method according to feature 12.

14. The substrate includes a semiconductor substrate, The first surface includes a trench provided in the semiconductor substrate. After the film formation step and before the CMP step, the trench is filled with an insulator. The processing method according to feature 12.

15. The substrate includes a semiconductor substrate, The first surface is composed of an insulator placed in a trench provided in the semiconductor substrate and on the surface of the semiconductor substrate. The processing method according to feature 12.

16. The substrate includes a semiconductor substrate, The first surface is composed of an interlayer insulating film disposed on the semiconductor substrate. The processing method according to feature 12.

17. The substrate includes a semiconductor substrate, The first surface is composed of an interlayer insulating film disposed on the semiconductor substrate, and the interlayer insulating film has a trench located in the central portion. After the film formation step and before the CMP step, a metal film is formed on the interlayer insulating film such that the trench is filled with metal. The processing method according to feature 12.

18. The interlayer insulating film includes, in addition to the trench, a dummy trench located in the outer region of the central portion. In the film formation step, the planarization film is formed not only on the outer peripheral portion but also on the dummy trench. The processing method according to feature 17.

19. The process of forming a resist pattern on a substrate, A film formation step is to form a protective film on at least the outer periphery of the substrate by placing a curable composition on the substrate, bringing SuperStraight into contact with the curable composition, and curing the curable composition. An etching step for etching the substrate that has undergone the film formation step, A processing method characterized by including the following.

20. The substrate has an interlayer insulating film, The resist pattern has openings for forming trenches in the interlayer insulating film. In the etching process, the trench is formed in the interlayer insulating film. The processing method according to feature 19.

21. The resist pattern includes a dummy opening. In the film formation step, the protective film is formed on the outer peripheral portion of the substrate as well as on the dummy opening. The processing method according to feature 20.

22. A first processing step of processing a substrate by the processing method described in any one of claims 1 to 21, A second processing step involves further processing the substrate that has undergone the first processing step to obtain a semiconductor device, A method for manufacturing a semiconductor device, characterized by including [the necessary components].

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