Method for manufacturing semiconductor devices

By employing controlled heat treatments and specific concentration management in semiconductor and insulating layers, the manufacturing process addresses the lack of optimization in oxide semiconductor devices, resulting in improved performance and reliability.

JP2026086485APending Publication Date: 2026-05-26SEMICON ENERGY LAB CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Filing Date
2026-01-26
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

The properties of oxide semiconductor materials have not been fully elucidated, and the fabrication conditions for semiconductor devices using these materials have not been optimized, leading to suboptimal device performance.

Method used

A manufacturing process involving multiple heat treatments and specific concentration controls for hydrogen and nitrogen in semiconductor and insulating layers, using indium, gallium, and zinc oxide semiconductors, is employed to enhance the characteristics of semiconductor devices.

Benefits of technology

The process results in semiconductor devices with improved performance by optimizing the properties of oxide semiconductor layers, reducing hydrogen and nitrogen diffusion, and enhancing the reliability and stability of the semiconductor elements.

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Abstract

One of the objectives is to provide a semiconductor device having semiconductor elements with good characteristics. [Solution] A step of forming a first conductive layer on a substrate that functions as a gate electrode, and A step of forming a first insulating layer so as to cover the conductive layer, and a step of partially overlapping the first conductive layer The process involves forming a semiconductor layer on a first insulating layer, and electrically connecting the semiconductor layer to it. The process involves forming a second conductive layer on top of the semiconductor layer and forming a second insulating layer that covers the semiconductor layer and the second conductive layer. The process involves forming a third conductive layer that is electrically connected to the second conductive layer, and semiconductor The first heat treatment step is performed after the step of forming the body layer and before the step of forming the second insulating layer, and the second The process includes a second heat treatment step following the step of forming an insulating layer.
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