transistor

The semiconductor device with transistor configurations and controlled voltage methods addresses high voltage requirements and transistor threshold variations, enhancing display quality and reducing power consumption in organic EL devices.

JP2026086491APending Publication Date: 2026-05-26SEMICON ENERGY LAB CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Filing Date
2026-01-27
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Existing organic EL display devices require high voltages for operation, and variations in transistor threshold voltages can degrade display quality, necessitating improved driving methods to enhance miniaturization, display quality, color reproducibility, and reduce power consumption.

Method used

A semiconductor device comprising specific transistor configurations with back gates, capacitors, and switches, utilizing metal oxide transistors, and a driving method that controls transistor states to stabilize voltage thresholds, including processes that correct variations in transistor threshold voltages.

Benefits of technology

The solution provides a miniaturized, high-definition, and highly reliable display device with improved display quality and reduced power consumption, achieving high color reproducibility.

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Abstract

The present invention provides a novel semiconductor device and a method for driving such a semiconductor device. [Solution] A semiconductor device and a method for driving a semiconductor device, comprising first and second transistors, first to fifth switches, first to third capacitors, and a display element, wherein the first transistor has a back gate, the gate of the first transistor is electrically connected to the first switch, the gate of the first transistor has a second switch and a first capacitor between the gate of the first transistor and the source of the first transistor, the back gate of the first transistor is electrically connected to the third switch, the back gate of the first transistor has a second capacitor between the back gate of the first transistor and the source of the first transistor, the source of the first transistor is electrically connected to the fourth switch and the drain of the second transistor, the gate of the second transistor is electrically connected to the fifth switch, the gate of the second transistor has a third capacitor between the gate of the second transistor and the source of the second transistor, and the source of the second transistor is electrically connected to a display element.
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