Semiconductor equipment
The semiconductor device structure with controlled oxygen and nitrogen content in insulating layers enhances electrical stability and reliability, addressing the challenges faced by existing semiconductor devices for high-performance applications.
JP2026086509APending Publication Date: 2026-05-26SEMICON ENERGY LAB CO LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Filing Date
- 2026-01-30
- Publication Date
- 2026-05-26
AI Technical Summary
Technical Problem
Existing semiconductor devices face challenges in achieving stable and reliable electrical characteristics, which are crucial for high-performance applications such as display devices.
Method used
A semiconductor device structure is developed with specific layers, including a first insulating layer, a semiconductor layer containing indium and oxygen, and a second insulating layer with controlled oxygen and nitrogen content, along with a conductive layer, to enhance electrical stability and reliability.
Benefits of technology
The proposed structure results in semiconductor devices with improved electrical characteristics and reliability, suitable for high-performance applications like display devices.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure 2026086509000001_ABST
Abstract
To provide semiconductor devices with good electrical characteristics. To provide highly reliable semiconductor devices. To provide semiconductor devices with stable electrical characteristics. [Solution] The semiconductor device comprises a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. It has a semiconductor layer, a second insulating layer, and a first conductive layer on a first insulating layer, in this order. The layers are stacked. The first insulating layer consists of the first insulating film, the second insulating film, and the third insulating film. It has a layered structure in which layers are stacked in order. The second insulating layer contains an oxide. The third insulating layer is semi- It has a portion that is in contact with the conductive layer. The first insulating film contains silicon and nitrogen. The second insulating film The edge film contains silicon, nitrogen, and oxygen. The third insulating film contains silicon, oxygen, The semiconductor layer contains indium and oxygen.
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