Semiconductor device and method for manufacturing a semiconductor device

Abstract

To provide semiconductor devices suitable for improving performance and miniaturization. [Solution] The semiconductor device has at least one control terminal 45. The control terminal includes a conductive cylindrical holder 451 and a metal pin 452 inserted into the holder. The semiconductor device also includes a terminal support 48 that supports the holder and a sealing resin 8 that covers part of the holder and the terminal support. The sealing resin has a resin main surface 81 facing one side in the thickness direction z. The holder has a first surface 454a located at one end in the thickness direction and a first outer surface 453a extending in the thickness direction. The first surface is located at a different position from the resin main surface in the thickness direction. The first outer surface is in contact with the sealing resin. The metal pin protrudes one side z1 in the thickness direction from the resin main surface.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] Conventionally, semiconductor devices including power switching elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are known. Such semiconductor devices are mounted in all electronic devices from industrial equipment to home appliances, information terminals, and automotive equipment. Patent Document 1 discloses a conventional semiconductor device (power module). The semiconductor device described in Patent Document 1 includes a semiconductor element and a support substrate (ceramic substrate). The semiconductor element is, for example, an IGBT made of Si (silicon). The support substrate supports the semiconductor element. The support substrate includes an insulating base material and conductor layers laminated on both surfaces of the base material. The base material is made of, for example, ceramic. Each conductor layer is made of, for example, Cu (copper), and the semiconductor element is joined to one of the conductor layers.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In recent years, energy saving, high performance, and miniaturization of electronic devices have been demanded. For this purpose, improvement in performance and miniaturization of power modules mounted in electronic devices are required.

[0005] One objective of this disclosure is to provide a semiconductor device that is improved compared to conventional devices. In particular, in view of the circumstances described above, one objective of this disclosure is to provide a semiconductor device that is suitable for improving performance and miniaturizing.

[0006] A semiconductor device provided by a first aspect of the present disclosure comprises a conductive cylindrical holder and at least one terminal including a metal pin inserted into the holder, a terminal support supporting the holder, and a sealing resin covering a portion of the holder and the terminal support, wherein the sealing resin has a resin main surface facing one side in the thickness direction, the holder has a first surface located at one end in the thickness direction and a first outer surface extending in the thickness direction, the first surface being at a different position from the resin main surface in the thickness direction, the first outer surface being in contact with the sealing resin, and the metal pin protruding from the resin main surface to one side in the thickness direction.

[0007] A semiconductor device provided by a second aspect of the present disclosure comprises a support substrate having a main surface facing one side in the thickness direction; at least one terminal including a conductive holder and a metal pin inserted into the holder; and a sealing resin having a resin main surface facing one side in the thickness direction and covering at least a portion of the support substrate, wherein at least one of the at least one terminals is exposed from the sealing resin by the entirety of the holder, and the metal pin protrudes beyond the resin main surface to one side in the thickness direction. [Effects of the Invention]

[0008] According to the above configuration, a desirable structure can be provided for semiconductor devices in order to improve performance and reduce size.

[0009] Other features and advantages of this disclosure will become more apparent from the detailed description below, with reference to the accompanying drawings. [Brief explanation of the drawing]

[0010] [Figure 1]Figure 1 is a perspective view showing a semiconductor device according to the first embodiment of this disclosure. [Figure 2] Figure 2 is a perspective view of a main component of a semiconductor device according to the first embodiment of this disclosure. [Figure 3] Figure 3 is a perspective view of a main component of a semiconductor device according to the first embodiment of this disclosure. [Figure 4] Figure 4 is a plan view showing a semiconductor device according to the first embodiment of this disclosure. [Figure 5] Figure 5 is a plan view of a main part of a semiconductor device according to the first embodiment of this disclosure. [Figure 6] Figure 6 is a side view of a main part of a semiconductor device according to the first embodiment of this disclosure. [Figure 7] Figure 7 is an enlarged plan view of a main part of a semiconductor device according to the first embodiment of this disclosure. [Figure 8] Figure 8 is a plan view of a main part of a semiconductor device according to the first embodiment of this disclosure. [Figure 9] Figure 9 is a plan view of a main part of a semiconductor device according to the first embodiment of this disclosure. [Figure 10] Figure 10 is a side view showing a semiconductor device according to the first embodiment of this disclosure. [Figure 11] Figure 11 is a bottom view showing a semiconductor device according to the first embodiment of this disclosure. [Figure 12] Figure 12 is a cross-sectional view along the line XII-XII in Figure 5. [Figure 13] Figure 13 is a cross-sectional view along the line XIII-XIII in Figure 5. [Figure 14] Figure 14 is an enlarged cross-sectional view of a main part of a semiconductor device according to the first embodiment of this disclosure. [Figure 15] Figure 15 is an enlarged cross-sectional view of a main part of a semiconductor device according to the first embodiment of this disclosure. [Figure 16] Figure 16 is a magnified view of a portion of Figure 13. [Figure 17] Figure 17 is a magnified view of a portion of Figure 4. [Figure 18]Figure 18 is a cross-sectional view taken along line XVIII-XVIII of FIG. 5. [Figure 19] Figure 19 is a cross-sectional view taken along line XIX-XIX of FIG. 5. [Figure 20] Figure 20 is a cross-sectional view taken along line XX-XX of FIG. 5. [Figure 21] Figure 21 is a cross-sectional view taken along line XXI-XXI of FIG. 5. [Figure 22] Figure 22 is a cross-sectional view taken along line XXII-XXII of FIG. 5. [Figure 23] Figure 23 is an enlarged cross-sectional view similar to FIG. 16 showing a semiconductor device according to the first modification of the first embodiment. [Figure 24] Figure 24 is an enlarged cross-sectional view similar to FIG. 16 showing a semiconductor device according to the second modification of the first embodiment. [Figure 25] Figure 25 is an enlarged cross-sectional view similar to FIG. 16 showing a semiconductor device according to the third modification of the first embodiment. [Figure 26] Figure 26 is an enlarged cross-sectional view similar to FIG. 16 showing a semiconductor device according to the fourth modification of the first embodiment. [Figure 27] Figure 27 is an enlarged cross-sectional view similar to FIG. 16 showing a semiconductor device according to the fifth modification of the first embodiment. [Figure 28] Figure 28 is a perspective view showing a semiconductor device according to the second embodiment of the present disclosure. [Figure 29] Figure 29 is an enlarged cross-sectional view similar to FIG. 16 showing a semiconductor device according to the second embodiment of the present disclosure. [Figure 30] Figure 30 is a perspective view showing a semiconductor device according to the first embodiment based on the second side of the present disclosure. [Figure 31] Figure 31 is a plan view showing a semiconductor device according to the first embodiment based on the second side of the present disclosure. [Figure 32] Figure 32 is a view showing the sealing resin by an imaginary line in the plan view of FIG. 31. [Figure 33] Figure 33 is a view in the plan view of FIG. 32 with the sealing resin and the second conductive member omitted. [Figure 34] Figure 34 is a plan view of Figure 33 with the first conductive member omitted. [Figure 35] Figure 35 is a bottom view showing a semiconductor device according to a first embodiment based on a second aspect of the present disclosure. [Figure 36] Figure 36 is a cross-sectional view along the line XXXVI-XXXVI in Figure 32. [Figure 37] Figure 37 is a partially enlarged cross-sectional view of a portion of Figure 36 (near the first element). [Figure 38] Figure 38 is a partially enlarged cross-sectional view of a portion of Figure 36 (near the second element). [Figure 39] Figure 39 is a cross-sectional view along the line XXXIX-XXXIX in Figure 32. [Figure 40] Figure 40 is a cross-sectional view along the XL-XL line in Figure 32. [Figure 41] Figure 41 is a cross-sectional view along the XLI-XLI line in Figure 32. [Figure 42] Figure 42 is a cross-sectional view along the line XLII-XLII in Figure 32. [Figure 43] Figure 43 is a cross-sectional view along the line XLIII-XLIII in Figure 32. [Figure 44] Figure 44 is a partially enlarged cross-sectional view, which is an enlarged portion of Figure 40. [Figure 45] Figure 45 is a cross-sectional view showing one step in the manufacturing method of a semiconductor device according to a first embodiment based on a second aspect of the present disclosure. [Figure 46] Figure 46 is a plan view showing a semiconductor device according to a first modification of the first embodiment from a second side view. [Figure 47] Figure 47 is a cross-sectional view along the line XLVII-XLVII in Figure 46. [Figure 48] Figure 48 is a cross-sectional view along the line XLVIII-XLVIII in Figure 46. [Figure 49] Figure 49 is a cross-sectional view similar to Figure 40, showing a semiconductor device according to a second modified example of the first embodiment from a second side view. [Figure 50]Figure 50 is a cross-sectional view similar to Figure 47, showing a semiconductor device according to a third modified example of the first embodiment from a second side view. [Figure 51] Figure 51 is a cross-sectional view similar to Figure 40, showing a semiconductor device according to a fourth modified example of the first embodiment from a second side view. [Figure 52] Figure 52 is a plan view showing a semiconductor device according to a fifth modified example of the first embodiment from a second side view. [Figure 53] Figure 53 is a cross-sectional view along the line LIII-LIII in Figure 52. [Modes for carrying out the invention]

[0011] Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings. First, a semiconductor device based on the first aspect of the present disclosure will be described with reference to Figures 1 to 29. Then, a semiconductor device based on the second aspect of the present disclosure will be described with reference to Figures 30 to 53. Note that the reference numerals used in Figures 1 to 29 (first aspect) and the reference numerals used in Figures 30 to 53 (second aspect) are independent of each other. Therefore, for example, the same reference numeral may indicate different components in the first aspect and the second aspect, or different reference numerals may indicate the same (or similar) components in the first aspect and the second aspect.

[0012] The terms "first," "second," "third," etc., used in this disclosure are for identification purposes only and are not necessarily intended to assign a sequence to those objects.

[0013] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is located on object B in contact with object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, unless otherwise specified, "object A overlaps with object B when viewed in a certain direction" includes "object A overlapping all of object B" and "object A overlapping a part of object B." Also, in this disclosure, "a surface A facing direction B (one or the other side of it)" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is inclined with respect to direction B.

[0014] First embodiment (first aspect): Figures 1 to 22 show a semiconductor device according to a first embodiment based on a first aspect of the present disclosure. The semiconductor device A1 of this embodiment comprises a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a support substrate 3, a first terminal 41, a second terminal 42, a plurality of third terminals 43, a fourth terminal 44, a plurality of control terminals 45, a control terminal support 48, a first conductive member 5, a second conductive member 6, and a sealing resin 8.

[0015] Figure 1 is a perspective view showing semiconductor device A1. Figures 2 and 3 are perspective views of the main parts of semiconductor device A1. Figure 4 is a plan view showing semiconductor device A1. Figure 5 is a plan view of the main parts of semiconductor device A1. Figure 6 is a side view of the main parts of semiconductor device A1. Figure 7 is an enlarged plan view of the main parts of semiconductor device A1. Figures 8 and 9 are plan views of the main parts of semiconductor device A1. Figure 10 is a side view showing semiconductor device A1. Figure 11 is a bottom view showing semiconductor device A1. Figure 12 is a cross-sectional view along the line XII-XII in Figure 5. Figure 13 is a cross-sectional view along the line XIII-XIII in Figure 5. Figures 14 and 15 are enlarged cross-sectional views of the main parts of semiconductor device A1. Figure 16 is a partially enlarged view of a part of Figure 13. Figure 17 is a partially enlarged view of a part of Figure 4. Figure 18 is a cross-sectional view along the line XVIII-XVIII in Figure 5. Figure 19 is a cross-sectional view along the line XIX-XIX in Figure 5. Figure 20 is a cross-sectional view along the line XX-XX in Figure 5. Figure 21 is a cross-sectional view along the line XXI-XXI in Figure 5. Figure 22 is a cross-sectional view along the line XXII-XXII in Figure 5.

[0016] For the sake of explanation, we will refer to the three mutually orthogonal directions as the x, y, and z directions. The z direction is an example of the thickness direction, and the x direction is an example of the first direction. Furthermore, one side of the x direction will be called the x1 side of the x direction, and the other side of the x direction will be called the x2 side of the x direction. Similarly, one side of the y direction will be called the y1 side of the y direction, and the other side will be called the y2 side of the y direction. Furthermore, one side of the z direction will be called the z1 side of the z direction, and the other side will be called the z2 side of the z direction.

[0017] Each of the multiple first semiconductor elements 10A and each of the multiple second semiconductor elements 10B are electronic components that form the functional core of the semiconductor device A1. The constituent material of each first semiconductor element 10A and each second semiconductor element 10B is a semiconductor material mainly composed of, for example, SiC (silicon carbide). This semiconductor material is not limited to SiC, but may also be Si (silicon), GaN (gallium nitride), or C (diamond), etc. Each first semiconductor element 10A and each second semiconductor element 10B are power semiconductor chips having a switching function, such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). In this embodiment, the case where the first semiconductor elements 10A and each second semiconductor element 10B are MOSFETs is shown, but it is not limited to this, and other transistors such as IGBTs (Insulated Gate Bipolar Transistors) may also be used. Each first semiconductor element 10A and each second semiconductor element 10B are all identical elements. Each first semiconductor element 10A and each second semiconductor element 10B are, for example, n-channel type MOSFETs, but may also be p-channel type MOSFETs.

[0018] As shown in Figures 14 and 15, the first semiconductor element 10A and the second semiconductor element 10B each have a main surface 101 and a back surface 102. In each first semiconductor element 10A and each second semiconductor element 10B, the main surface 101 and the back surface 102 are spaced apart in the z direction. The main surface 101 faces the z1 side in the z direction, and the back surface 102 faces the z2 side in the z direction.

[0019] In this embodiment, the semiconductor device A1 comprises four first semiconductor elements 10A and four second semiconductor elements 10B. However, the number of first semiconductor elements 10A and the number of second semiconductor elements 10B are not limited to this configuration and can be appropriately changed according to the performance required of the semiconductor device A1. In the example shown in Figures 8 and 9, four first semiconductor elements 10A and four second semiconductor elements 10B are arranged. The number of first semiconductor elements 10A and two second semiconductor elements 10B may be two or three, or five or more. The number of first semiconductor elements 10A and two second semiconductor elements 10B may be equal or different. The number of first semiconductor elements 10A and two second semiconductor elements 10B is determined by the current capacity handled by the semiconductor device A1.

[0020] The semiconductor device A1 is configured, for example, as a half-bridge type switching circuit. In this case, a plurality of first semiconductor elements 10A constitute the upper arm circuit of the semiconductor device A1, and a plurality of second semiconductor elements 10B constitute the lower arm circuit. In the upper arm circuit, the plurality of first semiconductor elements 10A are connected in parallel with each other, in the lower arm circuit, the first semiconductor elements 10A are connected in parallel with each other, and in the lower arm circuit, the plurality of second semiconductor elements 10B are connected in parallel with each other. Each first semiconductor element 10A and each second semiconductor element 10B are connected in series to form a bridge layer.

[0021] Each of the multiple first semiconductor elements 10A is mounted on a first conductive portion 32A of a support substrate 3, as shown in Figures 8, 9, and 21, etc. In the example shown in Figures 8 and 9, the multiple first semiconductor elements 10A are arranged, for example, in the y-direction and spaced apart from each other. Each first semiconductor element 10A is electrically bonded to the first conductive portion 32A via a conductive bonding material 19. When each first semiconductor element 10A is bonded to the first conductive portion 32A, the back surface 102 of the element faces the first conductive portion 32A. In contrast to this embodiment, the multiple first semiconductor elements 10A may be mounted on a metal member different from a part of the DBC substrate, etc. In this case, the metal member corresponds to the first conductive portion in this disclosure. This metal member may be supported, for example, by the DBC substrate, etc.

[0022] Each of the multiple second semiconductor elements 10B is mounted on a second conductive portion 32B of a support substrate 3, as shown in Figures 8, 9, and 20. In the example shown in Figures 8 and 9, the multiple second semiconductor elements 10B are arranged, for example, in the y-direction and spaced apart from one another. Each second semiconductor element 10B is electrically bonded to the second conductive portion 32B via a conductive bonding material 19. When each second semiconductor element 10B is bonded to the second conductive portion 32B, the back surface 102 of the element faces the second conductive portion 32B. As can be seen from Figure 9, when viewed in the x-direction, the multiple first semiconductor elements 10A and the multiple second semiconductor elements 10B overlap, but do not necessarily overlap. Unlike this embodiment, the multiple second semiconductor elements 10B may be mounted on a metal member different from a part of the DBC substrate, etc. In this case, the metal member corresponds to the second conductive portion in this disclosure. This metal member may be supported, for example, by the DBC substrate, etc.

[0023] Each of the multiple first semiconductor elements 10A and the multiple second semiconductor elements 10B has a first main surface electrode 11, a second main surface electrode 12, a third main surface electrode 13, and a back surface electrode 15. The configurations of the first main surface electrode 11, the second main surface electrode 12, the third main surface electrode 13, and the back surface electrode 15, as described below, are common to each of the first semiconductor elements 10A and each of the second semiconductor elements 10B. The first main surface electrode 11, the second main surface electrode 12, and the third main surface electrode 13 are provided on the main surface 101 of the element. The first main surface electrode 11, the second main surface electrode 12, and the third main surface electrode 13 are insulated by an insulating film (not shown). The back surface electrode 15 is provided on the back surface 102 of the element.

[0024] The first main surface electrode 11 is, for example, a gate electrode, to which a drive signal (for example, a gate voltage) for driving the first semiconductor element 10A (second semiconductor element 10B) is input. In the first semiconductor element 10A (second semiconductor element 10B), the second main surface electrode 12 is, for example, a source electrode, through which a source current flows. The second main surface electrode 12 in this embodiment has a gate finger 121. The gate finger 121 is, for example, made of a linear insulator extending in the x direction, and divides the second main surface electrode 12 into two in the y direction. The third main surface electrode 13 is, for example, a source sense electrode, through which a source current flows. The back surface electrode 15 is, for example, a drain electrode, through which a drain current flows. The back surface electrode 15 covers the entire (or substantially the entire) area of ​​the back surface 102 of the element. The back surface electrode 15 is, for example, made of Ag (silver) plating.

[0025] Each first semiconductor element 10A (each second semiconductor element 10B) switches between a conduction state and an interrupted state in response to a drive signal (gate voltage) input to the first main surface electrode 11 (gate electrode). In the conduction state, current flows from the back surface electrode 15 (drain electrode) to the second main surface electrode 12 (source electrode), and in the interrupted state, this current does not flow. In other words, each first semiconductor element 10A (each second semiconductor element 10B) performs a switching operation. The semiconductor device A1 converts the DC voltage input between one fourth terminal 44 and two first terminals 41 and second terminals 42 into, for example, an AC voltage, through the switching function of the plurality of first semiconductor elements 10A and plurality of second semiconductor elements 10B, and outputs the AC voltage from the third terminal 43. Each of the plurality of first semiconductor elements 10A corresponds to a first switching element in this disclosure. Each of the plurality of second semiconductor elements 10B corresponds to a second switching element in this disclosure.

[0026] As shown in Figures 5, 8, and 9, semiconductor device A1 includes a thermistor 17. The thermistor 17 is used as a temperature detection sensor. In addition to the thermistor 17, the device may also include, for example, a temperature-sensitive diode, or it may not include the thermistor 17 at all.

[0027] The support substrate 3 supports a plurality of first semiconductor elements 10A and a plurality of second semiconductor elements 10B. The specific configuration of the support substrate 3 is not limited in any way and may consist of, for example, a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. The support substrate 3 includes an insulating layer 31, a support conductor 32, and a back metal layer 33. The support conductor 32 includes a first conductive portion 32A and a second conductive portion 32B. The z-direction dimension of the support substrate 3 is, for example, 0.4 mm or more and 3.0 mm or less.

[0028] The insulating layer 31 is, for example, a ceramic with excellent thermal conductivity. Such a ceramic is, for example, SiN (silicon nitride). The insulating layer 31 is not limited to ceramics; it may also be an insulating resin sheet or the like. The insulating layer 31 is, for example, rectangular in plan view. The z-direction dimension of the insulating layer 31 is, for example, 0.05 mm to 1.0 mm.

[0029] The first conductive portion 32A supports a plurality of first semiconductor elements 10A, and the second conductive portion 32B supports a plurality of second semiconductor elements 10B. The first conductive portion 32A and the second conductive portion 32B are formed on the upper surface (the surface facing the z1 side in the z direction) of the insulating layer 31. The constituent material of the first conductive portion 32A and the second conductive portion 32B includes, for example, Cu (copper). The constituent material may also include, for example, Al (aluminum) other than Cu (copper). The first conductive portion 32A and the second conductive portion 32B are separated in the x direction. The first conductive portion 32A is located on the x1 side in the x direction relative to the second conductive portion 32B. The first conductive portion 32A and the second conductive portion 32B are each, for example, rectangular in plan view. The first conductive portion 32A and the second conductive portion 32B, together with the first conductive member 5 and the second conductive member 6, constitute a path for the main circuit current that is switched by a plurality of first semiconductor elements 10A and a plurality of second semiconductor elements 10B.

[0030] The first conductive portion 32A has a first main surface 301A. The first main surface 301A is a plane facing the z1 side in the z direction. Multiple first semiconductor elements 10A are bonded to the first main surface 301A of the first conductive portion 32A via a conductive bonding material 19. The second conductive portion 32B has a second main surface 301B. The second main surface 301B is a plane facing the z1 side in the z direction. Multiple second semiconductor elements 10B are bonded to the second main surface 301B of the second conductive portion 32B via a conductive bonding material 19. The constituent material of the conductive bonding material 19 is not particularly limited and may be solder, metal paste, or sintered metal. The z-direction dimensions of the first conductive portion 32A and the second conductive portion 32B are, for example, 0.1 mm or more and 1.5 mm or less.

[0031] The back metal layer 33 is formed on the lower surface (the surface facing z2 in the z direction) of the insulating layer 31. The constituent material of the back metal layer 33 is the same as the constituent material of the support conductor 32. The back metal layer 33 has a back surface 302. The back surface 302 is a plane facing z2 in the z direction. In the example shown in Figure 11, the back surface 302 is exposed from the sealing resin 8, for example. A heat dissipation member (e.g., a heat sink) not shown can be attached to the back surface 302. The back surface 302 may not be exposed from the sealing resin 8, but may be covered by the sealing resin 8. In a plan view, the back metal layer 33 overlaps both the first conductive portion 32A and the second conductive portion 32B.

[0032] The first terminal 41, the second terminal 42, the multiple third terminals 43, and the fourth terminal 44 are each made of a plate-shaped metal plate. This metal plate may include, for example, Cu (copper) or a Cu (copper) alloy. In the examples shown in Figures 1 to 5, 8, 9, and 11, the semiconductor device A1 has one first terminal 41, one second terminal 42, one fourth terminal 44, and two third terminals 43, but the number of each terminal is not limited in any way.

[0033] The first terminal 41, the second terminal 42, and the fourth terminal 44 receive a DC voltage to be converted. The fourth terminal 44 is the positive terminal (P terminal), while the first terminal 41 and the second terminal 42 are negative terminals (N terminals). Multiple third terminals 43 output AC voltages converted by the first semiconductor element 10A and the second semiconductor element 10B. The first terminal 41, the second terminal 42, the multiple third terminals 43, and the fourth terminal 44 each include a portion covered by the sealing resin 8 and a portion exposed from the sealing resin 8.

[0034] As shown in Figure 13, the fourth terminal 44 is electrically connected to the first conductive part 32A. The method of electrical connection is not limited in any way, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, silver sintered body, etc., can be used as appropriate. As shown in Figures 8 and 9, the fourth terminal 44 is located on the x1 side in the x direction with respect to the plurality of first semiconductor elements 10A and the first conductive part 32A. The fourth terminal 44 is electrically connected to the first conductive part 32A and is electrically connected to the back electrode 15 (drain electrode) of each first semiconductor element 10A via the first conductive part 32A.

[0035] The first terminal 41 and the second terminal 42 are electrically connected to the second conductive member 6. In this embodiment, the first terminal 41 and the second conductive member 6 are integrally formed. Integral formation of the first terminal 41 and the second conductive member 6 means that they are formed, for example, by cutting and bending a single metal plate material, and do not include any joining materials for joining them together. Also in this embodiment, the second terminal 42 and the second conductive member 6 are integrally formed. Note that the first terminal 41 and the second terminal 42 only need to be configured to be electrically connected to the second conductive member 6, and unlike this embodiment, they may have a configuration in which they are joined together. As shown in Figures 5 and 8, the first terminal 41 and the second terminal 42 are located on the x1 side in the x direction with respect to the plurality of first semiconductor elements 10A and the first conductive part 32A. The first terminal 41 and the second terminal 42 are electrically connected to the second conductive member 6, and are electrically connected to the second main surface electrode 12 (source electrode) of each second semiconductor element 10B via the second conductive member 6.

[0036] As shown in Figures 1 to 5 and Figure 11, the first terminal 41, the second terminal 42, and the fourth terminal 44 each protrude from the sealing resin 8 towards the x1 side in the x direction in the semiconductor device A1. The first terminal 41, the second terminal 42, and the fourth terminal 44 are spaced apart from each other. The first terminal 41 and the second terminal 42 are located on opposite sides of the fourth terminal 44 in the y direction. The first terminal 41 is located on the y1 side in the y direction of the fourth terminal 44, and the second terminal 42 is located on the y2 side in the y direction of the fourth terminal 44. The first terminal 41, the second terminal 42, and the fourth terminal 44 overlap each other when viewed in the y direction.

[0037] The two third terminals 43 are electrically connected to the second conductive portion 32B, as can be seen from Figures 8, 9, and 12. The method of electrical connection is not limited, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, silver sintered body, etc., can be used as appropriate. The two third terminals 43 are located on the x2 side in the x direction with respect to the plurality of second semiconductor elements 10B and second conductive portion 32B, as shown in Figure 8 and other figures. Each third terminal 43 is electrically connected to the second conductive portion 32B and, via the second conductive portion 32B, is electrically connected to the back electrode 15 (drain electrode) of each second semiconductor element 10B. The number of third terminals 43 is not limited to two; for example, there may be one or three or more. For example, if there is only one third terminal 43, it is desirable that it is connected to the central part in the y direction of the second conductive portion 32B.

[0038] Each of the control terminals 45 is a pin-shaped terminal for controlling the drive of each first semiconductor element 10A and each second semiconductor element 10B. Each of the control terminals 45 is, for example, a press-fit terminal. The control terminals 45 include multiple first control terminals 46A to 46E and multiple second control terminals 47A to 47D. The multiple first control terminals 46A to 46E are used for controlling each first semiconductor element 10A, etc. The multiple second control terminals 47A to 47D are used for controlling each second semiconductor element 10B, etc.

[0039] Multiple first control terminals 46A to 46E are arranged at intervals in the y-direction. Each first control terminal 46A to 46E is supported by the first conductive part 32A via a control terminal support 48 (first support part 48A, described later), as shown in Figures 8, 13, and 22. Each first control terminal 46A to 46E is located in the x-direction between multiple first semiconductor elements 10A and the first terminal 41, second terminal 42, and fourth terminal 44, as shown in Figures 5 and 8.

[0040] The first control terminal 46A is a terminal (gate terminal) for inputting drive signals to multiple first semiconductor elements 10A. Drive signals for driving multiple first semiconductor elements 10A are input to the first control terminal 46A (for example, a gate voltage is applied).

[0041] The first control terminal 46B is a source sense terminal for detecting the source signals of multiple first semiconductor elements 10A. The voltage applied to each second main surface electrode 12 (source electrode) of multiple first semiconductor elements 10A (voltage corresponding to the source current) is detected from the first control terminal 46B.

[0042] The first control terminals 46C and 46D are terminals that conduct to the thermistor 17.

[0043] The first control terminal 46E is a drain sense terminal for detecting the drain signals of multiple first semiconductor elements 10A. The voltage applied to each back electrode 15 (drain electrode) of the multiple first semiconductor elements 10A (voltage corresponding to the drain current) is detected from the first control terminal 46E.

[0044] Multiple second control terminals 47A to 47D are arranged at intervals in the y-direction. Each second control terminal 47A to 47D is supported by the second conductive part 32B via a control terminal support 48 (second support part 48B described later), as shown in Figures 8 and 13. Each second control terminal 47A to 47D is located in the x-direction between multiple second semiconductor elements 10B and two third terminals 43, as shown in Figures 5 and 8.

[0045] The second control terminal 47A is a terminal (gate terminal) for inputting drive signals to multiple second semiconductor elements 10B. Drive signals for driving multiple second semiconductor elements 10B are input to the second control terminal 47A (for example, a gate voltage is applied). The second control terminal 47B is a terminal (source sense terminal) for detecting the source signals of multiple second semiconductor elements 10B. The voltage applied to each second main surface electrode 12 (source electrode) of multiple second semiconductor elements 10B (voltage corresponding to the source current) is detected from the second control terminal 47B. The second control terminals 47C and 47D are terminals that conduct to the thermistor 17.

[0046] Each of the control terminals 45 (multiple first control terminals 46A to 46E and multiple second control terminals 47A to 47D) includes a holder 451 and a metal pin 452.

[0047] The holder 451 is made of a conductive material. As shown in Figures 14 and 15, the holder 451 is bonded to the control terminal support 48 (the first metal layer 482 described later) via a conductive bonding material 459. As shown in Figure 16, the holder 451 includes a cylindrical portion 453, a first flange portion 454, and a second flange portion 455.

[0048] The cylindrical portion 453 extends in the z-direction and is, for example, cylindrical. The cylindrical portion 453 has a first outer surface 453a and a first inner surface 453b. The first outer surface 453a is a surface that faces radially outward from the cylindrical portion 453 when viewed in the z-direction and extends in the z-direction. The first inner surface 453b faces the opposite side from the first outer surface 453a and is a surface that faces radially inward from the cylindrical portion 453 when viewed in the z-direction and extends in the z-direction.

[0049] The first flange portion 454 connects to the z1 end of the cylindrical portion 453 in the z-direction. The first flange portion 454 has a first surface 454a and a second surface 454b. The first surface 454a is the surface facing the z1 side in the z-direction. The first surface 454a is located at the z1 end in the z-direction in the holder 451. The first surface 454a forms an annular shape (circular or rectangular annular) when viewed in the z-direction. The second surface 454b is located further towards the z2 side in the z-direction than the first surface 454a and is the surface facing the z2 side in the z-direction.

[0050] The second flange portion 455 is connected to the z2 end of the cylindrical portion 453 in the z direction. In this embodiment, the second flange portion 455 is joined to the control terminal support 48 (the first metal layer 482 described later) via a conductive bonding material 459.

[0051] A metal pin 452 is inserted through at least the first flange portion 454 and the cylindrical portion 453 of the holder 451. Part of the holder 451 is covered with sealing resin 8. At least the first outer surface 453a (cylindrical portion 453) is in contact with the sealing resin 8. In the example shown in Figure 16, the entirety of the first outer surface 453a of the cylindrical portion 453 and the second surface 454b of the first flange portion 454 are in contact with the sealing resin 8.

[0052] The metal pin 452 is a rod-shaped member extending in the z direction. The metal pin 452 is supported by being press-fitted into the holder 451. The metal pin 452 is electrically connected to the control terminal support 48 (the first metal layer 482 described later) at least via the holder 451. In the examples shown in Figures 14 to 16, the metal pin 452 is not inserted to the lower end of the holder 451 (the end on the z2 side in the z direction), and the lower end of the metal pin 452 is away from the conductive bonding material 459. In this case, the metal pin 452 is electrically connected to the control terminal support 48 (the first metal layer 482) via the holder 451. Unlike the illustrated examples, if the lower end of the metal pin 452 (the end on the z2 side in the z direction) is in contact with the conductive bonding material 459 within the insertion hole of the holder 451, the metal pin 452 is electrically connected to the control terminal support 48 via the conductive bonding material 459. The metal pin 452 protrudes from the upper surface of the sealing resin 8 (the main resin surface 81, described later) towards the z1 side in the z direction.

[0053] The control terminal support 48 supports a plurality of control terminals 45. In the z-direction, the control terminal support 48 is interposed between the first main surface 301A and the second main surface 301B and the plurality of control terminals 45.

[0054] The control terminal support 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is positioned on the first conductive portion 32A and supports multiple first control terminals 46A to 46E of the multiple control terminals 45. As shown in Figure 14, the first support portion 48A is joined to the first conductive portion 32A via a bonding material 49. The bonding material 49 may be conductive or insulating, but solder, for example, is used. The second support portion 48B is positioned on the second conductive portion 32B and supports multiple second control terminals 47A to 47D of the multiple control terminals 45. As shown in Figure 15, the second support portion 48B is joined to the second conductive portion 32B via a bonding material 49.

[0055] The control terminal support 48 (each of the first support portion 48A and the second support portion 48B) is made of, for example, a DBC (Direct Bonded Copper) substrate. The control terminal support 48 has an insulating layer 481, a first metal layer 482, and a second metal layer 483 that are stacked on top of each other.

[0056] The insulating layer 481 is made of, for example, ceramics. The insulating layer 481 is, for example, rectangular in plan view.

[0057] The first metal layer 482 is formed on the upper surface of the insulating layer 481, as shown in Figures 14 and 15. Each control terminal 45 is erected on the first metal layer 482. The first metal layer 482 includes, for example, Cu (copper) or a Cu (copper) alloy. As shown in Figure 8, the first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, a fifth portion 482E, and a sixth portion 482F. The first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, the fifth portion 482E, and the sixth portion 482F are separated from each other and insulated.

[0058] The first section 482A has multiple wires 71 joined to it, and each wire 71 provides electrical conductivity to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B). The first section 482A and the sixth section 482F are connected by multiple wires 73. As a result, the sixth section 482F provides electrical conductivity to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via wires 73 and wires 71. As shown in Figure 8, the first control terminal 46A is joined to the sixth section 482F of the first support section 48A, and the second control terminal 47A is joined to the sixth section 482F of the second support section 48B.

[0059] The second part 482B has multiple wires 72 joined to it, and each wire 72 provides electrical conductivity to the third main surface electrode 13 (source sense electrode) of each first semiconductor element 10A (each second semiconductor element 10B). As shown in Figure 8, the first control terminal 46B is joined to the second part 482B of the first support part 48A, and the second control terminal 47B is joined to the second part 482B of the second support part 48B.

[0060] The third section 482C and the fourth section 482D are connected to the thermistor 17. As shown in Figure 8, the first control terminals 46C and 46D are connected to the third section 482C and the fourth section 482D of the first support section 48A, and the second control terminals 47C and 47D are connected to the third section 482C and the fourth section 482D of the second support section 48B.

[0061] The fifth portion 482E of the first support portion 48A is joined to a wire 74, and is electrically connected to the first conductive portion 32A via the wire 74. As shown in Figure 8, the first control terminal 46E is joined to the fifth portion 482E of the first support portion 48A. The fifth portion 482E of the second support portion 48B is not electrically connected to other components. Each of the above wires 71 to 74 is, for example, a bonding wire. The constituent material of each wire 71 to 74 includes, for example, Au (gold), Al (aluminum), or Cu (copper).

[0062] The second metal layer 483 is formed on the lower surface of the insulating layer 481, as shown in Figures 14 and 15. The second metal layer 483 of the first support portion 48A is joined to the first conductive portion 32A via a bonding material 49, as shown in Figure 14. The second metal layer 483 of the second support portion 48B is joined to the second conductive portion 32B via a bonding material 49, as shown in Figure 15.

[0063] The first conductive member 5 and the second conductive member 6, together with the first conductive portion 32A and the second conductive portion 32B, constitute a path for the main circuit current switched by a plurality of first semiconductor elements 10A and a plurality of second semiconductor elements 10B. The first conductive member 5 and the second conductive member 6 are spaced apart from the first main surface 301A and the second main surface 301B on the z1 side in the z direction, and overlap the first main surface 301A and the second main surface 301B in a plan view. In this embodiment, the first conductive member 5 and the second conductive member 6 are each made of a metal plate. The metal includes, for example, Cu (copper) or a Cu (copper) alloy. Specifically, the first conductive member 5 and the second conductive member 6 are metal plates that have been appropriately bent.

[0064] The first conductive member 5 is connected to the second main surface electrode 12 (source electrode) of each first semiconductor element 10A and the second conductive portion 32B, thereby creating electrical conductivity between the second main surface electrode 12 of each first semiconductor element 10A and the second conductive portion 32B. The first conductive member 5 constitutes a path for the main circuit current switched by the plurality of first semiconductor elements 10A. As shown in Figures 7 and 8, the first conductive member 5 includes a main portion 51, a plurality of first junctions 52, and a plurality of second junctions 53.

[0065] The main portion 51 is located between the multiple first semiconductor elements 10A and the second conductive portion 32B in the x-direction, and is a band-shaped portion that extends in the y-direction in a plan view. In a plan view, the main portion 51 overlaps both the first conductive portion 32A and the second conductive portion 32B, and is spaced away from the first main surface 301A and the second main surface 301B on the z1 side in the z-direction. As shown in Figure 18 and other figures, the main portion 51 is located on the z2 side in the z-direction relative to the third path portion 66 and the fourth path portion 67 of the second conductive member 6, which will be described later, and is in a position closer to the first main surface 301A and the second main surface 301B than the third path portion 66 and the fourth path portion 67.

[0066] In this embodiment, the main portion 51 is arranged parallel to the first main surface 301A and the second main surface 301B.

[0067] As shown in Figure 8 and other figures, the main portion 51 extends in a series in the y-direction corresponding to the region in which the multiple first semiconductor elements 10A are arranged. In this embodiment, as shown in Figures 7, 8, and 13, multiple first openings 514 are formed in the main portion 51. Each of the multiple first openings 514 is a through hole that penetrates, for example, in the z-direction (the thickness direction of the main portion 51). The multiple first openings 514 are arranged at intervals in the y-direction. The multiple first openings 514 are provided corresponding to each of the multiple first semiconductor elements 10A. In this embodiment, the main portion 51 is provided with four first openings 514, and the positions of these first openings 514 and the multiple (four) first semiconductor elements 10A in the y-direction are equal to each other.

[0068] In this embodiment, as shown in Figures 8 and 13, each first opening 514 overlaps the gap between the first conductive portion 32A and the second conductive portion 32B in a plan view. The multiple first openings 514 are formed to facilitate the flow of the resin material between the upper side (z1 side in the z direction) and the lower side (z2 side in the z direction) near the main portion 51 (first conductive member 5) when injecting the fluid resin material to form the sealing resin 8.

[0069] As shown in Figure 8 and other figures, the multiple first joints 52 and the multiple second joints 53 are each connected to the main part 51 and are arranged corresponding to the multiple first semiconductor elements 10A. Specifically, each first joint 52 is located on the x1 side in the x direction relative to the main part 51. Each second joint 53 is located on the x2 side in the x direction relative to the main part 51. As shown in Figure 14, each first joint 52 and the second main surface electrode 12 of any of the corresponding first semiconductor elements 10A are joined via a conductive bonding material 59. Each second joint 53 and the second conductive part 32B are joined via a conductive bonding material 59. The constituent material of the conductive bonding material 59 is not particularly limited and may be solder, metal paste, or sintered metal, for example. In this embodiment, the first joint 52 has two parts separated in the y direction. These two parts are joined to the second main surface electrode 12 of the first semiconductor element 10A on both sides in the y-direction, with the gate finger 121 of the second main surface electrode 12 in between.

[0070] The second conductive member 6 connects the second main surface electrode 12 (source electrode) of each second semiconductor element 10B with the first terminal 41 and the second terminal 42. The second conductive member 6 is integrally formed with the first terminal 41 and the second terminal 42. The second conductive member 6 constitutes a path for the main circuit current switched by the plurality of second semiconductor elements 10B. As shown in Figures 5 to 7, 12, 13, and 18 to 22, the second conductive member 6 includes a plurality of third junctions 61, a first path portion 64, a second path portion 65, a plurality of third path portions 66 and a fourth path portion 67. In the illustrated example, the second conductive member 6 also includes a first stepped portion 602 and a second stepped portion 603.

[0071] The multiple third junctions 61 are portions that are individually joined to the multiple second semiconductor elements 10B. Each third junction 61 and the second main surface electrode 12 of each second semiconductor element 10B are joined via a conductive bonding material 69. The constituent material of the conductive bonding material 69 is not particularly limited and may be solder, metal paste, or sintered metal, for example. In this embodiment, the third junction 61 has two flat portions 611 and two first inclined portions 612.

[0072] The two flat portions 611 are aligned in the y-direction. The two flat portions 611 are spaced apart from each other in the y-direction. The shape of the flat portions 611 is not limited in any way, and in the illustrated example, it is rectangular. The two flat portions are joined to the second main surface electrode 12 of the second semiconductor element 10B on both sides in the y-direction, with the gate finger 121 of the second main surface electrode 12 in between.

[0073] The two first inclined portions 612 connect to the outside of the two flat portions 611 in the y-direction. That is, the first inclined portion 612 located on the y1 side in the y-direction connects to the y1 side of the flat portion 611 located on the y1 side in the y-direction. Similarly, the first inclined portion 612 located on the y2 side in the y-direction connects to the y2 side of the flat portion 611 located on the y2 side in the y-direction. The first inclined portions 612 are inclined such that the further they are from the flat portion 611 in the y-direction, the further they are located towards the z1 side in the z-direction.

[0074] The first path portion 64 is interposed between the multiple third joint portions 61 and the first terminal 41. In the illustrated example, the first path portion 64 is connected to the first terminal 41 via the first stepped portion 602. In plan view, the first path portion 64 overlaps the first conductive portion 32A. The first path portion 64 has a shape that extends in the x direction as a whole.

[0075] The first path portion 64 includes a first strip portion 641 and a first extension portion 643. The first strip portion 641 is located on the x2 side in the x direction with respect to the first terminal 41 and is substantially parallel to the first main surface 301A. The first strip portion 641 as a whole has a shape that extends in the x direction. In the illustrated example, the first strip portion 641 has a recess 649. The recess 649 is a portion of the first strip portion 641 that is recessed on the y1 side in the y direction. In Figures 5 and 7, the first conductive portion 32A is visible through the recess 649.

[0076] The first extension portion 643 extends from the y1 side end of the first strip portion 641 in the y direction to the z2 side in the z direction. The first extension portion 643 is separated from the first conductive portion 32A. In the illustrated example, the first extension portion 643 has a shape along the z direction and is a long rectangle with the x direction as its longitudinal direction. Note that the first path portion 64 may be configured without the first extension portion 643.

[0077] The second path portion 65 is interposed between the multiple third joint portions 61 and the second terminal 42. In the illustrated example, the second path portion 65 is connected to the second terminal 42 via the second stepped portion 603. In plan view, the second path portion 65 overlaps the first conductive portion 32A. The second path portion 65 has a shape that extends in the x direction as a whole.

[0078] The second path portion 65 includes a second strip portion 651 and a second extension portion 653. The second strip portion 651 is located on the x2 side in the x-direction with respect to the second terminal 42 and is substantially parallel to the first main surface 301A. The second strip portion 651 as a whole has a shape that extends in the x-direction. In the illustrated example, the second strip portion 651 has a recess 659. The recess 659 is a portion of the second strip portion 651 that is recessed on the y2 side in the y-direction. In Figures 5 and 7, the first conductive portion 32A is visible through the recess 659.

[0079] The second extension portion 653 extends from the y2 side end of the second strip portion 651 in the y direction to the z2 side in the z direction. The second extension portion 653 is separated from the first conductive portion 32A. The second extension portion 653 has a shape along the z direction, similar to the first extension portion 643, and is a long rectangle with the x direction as its longitudinal direction. Note that the second path portion 65 may be configured without the second extension portion 653.

[0080] Multiple third path portions 66 are individually connected to multiple third junction portions 61. Each third path portion 66 has a shape that extends in the x direction and is arranged spaced apart from each other in the y direction. The number of multiple third path portions 66 is not limited in any way, and in the illustrated example, five third path portions 66 are arranged. Each third path portion 66 is arranged in the y direction to be located between multiple second semiconductor elements 10B, or to be located outside the multiple second semiconductor elements 10B in the y direction.

[0081] Recesses 669 are formed in the two third path portions 66 located on both outer sides in the y-direction. The recesses 669 are recessed from the inside outward in the y-direction. In the illustrated example, one recess 669 is formed in each of the two third path portions 66. In Figures 5 and 7, the second conductive portion 32B is visible through these recesses 669.

[0082] In this embodiment, one third joint 61 is positioned between two adjacent third path sections 66 in the y direction. In one third joint 61, the first inclined portion 612 located on the y1 side in the y direction is connected to the third path section 66 located on the y1 side in the y direction of the two adjacent third path sections 66 in the y direction. In one third joint 61, the first inclined portion 612 located on the y2 side in the y direction is connected to the third path section 66 located on the y2 side in the y direction of the two adjacent third path sections 66 in the y direction.

[0083] The fourth path section 67 is connected to the x1 end in the x-direction of the multiple third path sections 66. The fourth path section 67 has a shape that extends long in the y-direction. The fourth path section 67 is connected to the x2 end in the x-direction of the first strip-shaped section 641 of the first path section 64 and the second strip-shaped section 651 of the second path section 65. In the illustrated example, the first path section 64 is connected to the y1 end in the y-direction of the fourth path section 67. Also, the second path section 65 is connected to the y2 end in the y-direction of the fourth path section 67.

[0084] The sealing resin 8 covers a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a support substrate 3 (excluding the back surface 302), a portion of the first terminal 41, a second terminal 42, a plurality of third terminals 43, and a portion of the fourth terminal 44, a portion of a plurality of control terminals 45, a control terminal support 48, a first conductive member 5, a second conductive member 6, and a plurality of wires 71 to 74. The sealing resin 8 is made of, for example, black epoxy resin. The sealing resin 8 is formed, for example, by mold molding. The sealing resin 8 has dimensions of approximately 35 mm to 60 mm in the x-direction, approximately 35 mm to 50 mm in the y-direction, and approximately 4 mm to 15 mm in the z-direction. These dimensions are the size of the largest portion along each direction. The sealing resin 8 has a resin main surface 81, a resin back surface 82, and a plurality of resin side surfaces 831 to 834.

[0085] As shown in Figures 10, 12, and 20, the resin main surface 81 and the resin back surface 82 are separated in the z direction. The resin main surface 81 faces the z1 side in the z direction, and the resin back surface 82 faces the z2 side in the z direction. Multiple metal pins 452 of the control terminals 45 (multiple first control terminals 46A to 46E and multiple second control terminals 47A to 47D) protrude from the resin main surface 81. As shown in Figure 11, the resin back surface 82 is frame-shaped in plan view, surrounding the back surface 302 of the support substrate 3 (the lower surface of the back metal layer 33). The back surface 302 of the support substrate 3 is exposed from the resin back surface 82 and is, for example, flush with the resin back surface 82. Multiple resin side surfaces 831 to 834 are each connected to both the resin main surface 81 and the resin back surface 82, and are sandwiched between them in the z direction. As shown in Figure 4, resin side 831 and resin side 832 are separated in the x direction. Resin side 831 faces the x2 side in the x direction, and resin side 832 faces the x1 side in the x direction. Two third terminals 43 protrude from resin side 831, and the first terminal 41, second terminal 42, and fourth terminal 44 protrude from resin side 832. As shown in Figure 4, resin side 833 and resin side 834 are separated in the y direction. Resin side 833 faces the y2 side in the y direction, and resin side 834 faces the y1 side in the y direction.

[0086] In this embodiment, as shown in Figures 1, 4, 13, and 22, a plurality of first recesses 810 are formed on the resin main surface 81. Each of the plurality of first recesses 810 is recessed toward the z2 side in the z direction from the resin main surface 81. The plurality of first recesses 810 are provided corresponding to each of the plurality of control terminals 45.

[0087] As shown in Figures 16 and 17, the first recess 810 overlaps the entire cylindrical portion 453 of the holder 451 in a plan view. In the illustrated example, the first recess 810 has an inner recess surface 811 and a bottom recess surface 812. The inner recess surface 811 connects to the resin main surface 81 and extends towards the z2 side in the z direction. In the illustrated example, the cross-section of the inner recess surface 811 perpendicular to the z direction is circular. The bottom recess surface 812 connects to the z2 side end of the inner recess surface 811 in the z direction and is a plane facing towards the z1 side in the z direction.

[0088] The bottom surface 812 of the recess surrounds the first surface 454a of the holder 451 (first flange portion 454) in a plan view. Also, the first surface 454a and the bottom surface 812 of the recess are flush. Such a first recess 810 is a trace of the sealing resin 8 formed by molding while pressing, for example, the upper end (first flange portion 454) of the holder 451 with a pin of a shape corresponding to the first recess 810. This fact that the first recess 810 is a trace of the molding process is also true for the first recess 810 in the various modifications described later. The first flange portion 454 is located on the z2 side in the z direction with respect to the resin main surface 81. As shown in Figure 16, both the first outer surface 453a of the cylindrical portion 453 and the second surface 454b of the first flange portion 454 are in contact with the sealing resin 8. On the other hand, the first inner surface 453b of the cylindrical portion 453 and the first surface 454a of the first flange portion 454 are exposed from the sealing resin 8. In the example shown in Figures 16 and 17, the first recess 810 overlaps with the entirety of the first flange portion 454 when viewed in the z direction. As a result, the diameter (maximum inner diameter) of the first recess 810 is larger than the outer diameter of the first flange portion 454.

[0089] The first surface 454a, which is flush with the bottom surface 812 of the recess, is located at a different position from the resin main surface 81 in the z direction. Specifically, the first surface 454a is located on the z2 side of the z direction relative to the resin main surface 81. In this embodiment, the first dimension L1, which is the distance in the z direction between the resin main surface 81 and the first surface 454a, is smaller than the second dimension L2, which is the length of the holder 451 in the z direction. Preferably, the ratio of the distance in the z direction between the resin main surface 81 and the first surface 454a (first dimension L1) to the length of the holder 451 in the z direction (second dimension L2) is 1 / 3 or more.

[0090] In the examples shown in Figures 16 and 17, the inner surface 811 of the recess is cylindrical, but a draft angle may be provided during mold forming. When a draft angle is provided on the inner surface 811 of the recess, the inner surface 811 is made into a conical shape that slopes so that the inner diameter decreases as it approaches the z2 side in the z direction. The angle of the draft angle of the inner surface 811 of the recess is set appropriately, for example, in the range of 0 to 30°. Also, when the inner surface 811 of the recess slopes into a cone shape, if the angle of inclination is relatively large, the inner diameter of the lower end of the inner surface 811 of the recess (the end on the z2 side in the z direction) may become smaller than the outer diameter of the first flange 454. In such a case, the recess bottom surface 812 described above is not formed. The lower end of the inner surface 811 of the recess is in contact with the first surface 454a and becomes the edge of the recess.

[0091] As shown in Figure 4, a plurality of recesses 832a are formed on the resin side surface 832. Each recess 832a is a recessed area in the x-direction in a plan view. The plurality of recesses 832a are formed between the first terminal 41 and the fourth terminal 44 in a plan view, and between the second terminal 42 and the fourth terminal 44. The plurality of recesses 832a are provided to increase the creepage distance along the resin side surface 832 between the first terminal 41 and the fourth terminal 44, and between the second terminal 42 and the fourth terminal 44.

[0092] As shown in Figures 1, 12, and 13, the sealing resin 8 has a plurality of protrusions 851. Each of the plurality of protrusions 851 projects from the main resin surface 81 toward the z1 side in the z direction. The plurality of protrusions 851 are arranged near the four corners of the sealing resin 8 in a plan view. A protruding end face 851a is formed at the tip of each protrusion 851 (the end on the z1 side in the z direction). Each protruding end face 851a of the plurality of protrusions 851 is parallel (or substantially parallel) to the main resin surface 81 and lies on the same plane (xy plane). Each protrusion 851 is, for example, a frustoconical shape with a bottom and hollow. The plurality of protrusions 851 are used as spacers when the semiconductor device A1 is mounted on a control circuit board or the like in equipment that utilizes a power supply generated by the semiconductor device A1. Each of the plurality of protrusions 851 has a recess 851b and an inner wall surface 851c formed in the recess 851b. The shape of each protrusion 851 may be columnar, but is preferably cylindrical. The shape of the recess 851b is cylindrical, and in plan view, the inner wall surface 851c is preferably a single perfect circle.

[0093] The semiconductor device A1 may be mechanically fixed to a control circuit board or the like by methods such as screw fastening. In this case, internal threads can be formed on the inner wall surface 851c of the recesses 851b in the multiple protrusions 851. Insert nuts may also be embedded in the recesses 851b of the multiple protrusions 851.

[0094] Next, the operation of this embodiment will be described.

[0095] Each control terminal 45 is formed by a holder 451 which has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the z1 end in the z direction of the holder 451. The first surface 454a is in a different position from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pins 452 forming each control terminal 45 protrude from the resin main surface 81 towards the z1 side in the z direction. With this configuration, the multiple control terminals 45 are arranged in a region surrounded by the resin main surface 81 (sealing resin 8) in a plan view. Such a semiconductor device A1 can be miniaturized in a plan view. In addition, the first surface 454a is in a different position from the resin main surface 81 in the z direction. With this configuration, the creepage distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased for adjacent control terminals 45. Therefore, semiconductor device A1 is suitable for miniaturizing in a plan view while increasing the withstand voltage of the adjacent control terminal 45.

[0096] The holder 451 includes a cylindrical portion 453 extending in the z direction and a first flange portion 454 connected to the z1 end of the cylindrical portion 453 in the z direction. The first flange portion 454 has a first surface 454a facing the z1 side in the z direction. The sealing resin 8 has a first recess 810. The first recess 810 is recessed from the resin main surface 81 toward the z1 side in the z direction. The first flange portion 454 is located toward the z2 side in the z direction with respect to the resin main surface 81. With the sealing resin 8 having the above-described first recess 810, the first surface 454a (first flange portion 454) can be appropriately positioned in a position different from the resin main surface 81 in the z direction.

[0097] Furthermore, the first recess 810 overlaps the entire cylindrical portion 453 in a plan view (viewed in the z direction). This makes it possible to insert the lower end of the metal pin 452 into the holder 451 (cylindrical portion 453) while the lower end of the metal pin 452 enters the first recess 810, resulting in excellent workability during the press-fitting process.

[0098] The first recess 810 has an inner recess surface 811 and a recess bottom surface 812. The recess bottom surface 812 faces the z1 side in the z direction and surrounds the first surface 454a when viewed in the z direction. Furthermore, the entire first surface 454a is exposed from the sealing resin 8. With this configuration, the visibility of the first surface 454a (first flange portion 454) surrounded by the recess bottom surface 812 is excellent in a plan view. This improves the workability when press-fitting the metal pin 452 into the holder 451. In addition, with the configuration in which the recess bottom surface 812 of the first recess 810 surrounds the first surface 454a (first flange portion 454) in a plan view, the creepage distance along the surface of the sealing resin 8 can be increased for adjacent control terminals 45. This is more preferable for increasing the withstand voltage of adjacent control terminals 45.

[0099] The distance in the z-direction between the resin main surface 81 and the first surface 454a (first dimension L1) is smaller than the length of the holder 451 in the z-direction (second dimension L2). The ratio of the distance in the z-direction between the resin main surface 81 and the first surface 454a (first dimension L1) to the length of the holder 451 in the z-direction (second dimension L2) is, for example, 50% or more. With this configuration, it is possible to increase the creepage distance along the surface of the sealing resin 8 at adjacent control terminals 45 while avoiding an increase in the z-direction dimension of the sealing resin 8.

[0100] First modified example of the first embodiment (first side view): Figure 23 shows a semiconductor device according to a first modified example of the first embodiment. Figure 23 is an enlarged cross-sectional view of the main part of the semiconductor device A11 of this modified example, and is a cross-sectional view similar to that of Figure 16. In Figures 23 to 29, elements that are the same as or similar to those of the semiconductor device A1 of the above embodiment are denoted by the same reference numerals as in the above embodiment, and their descriptions are omitted as appropriate. Furthermore, the configurations of each part in each modified example and each embodiment in Figures 23 to 29 can be appropriately combined with each other to the extent that no technical inconsistencies arise.

[0101] In the semiconductor device A11 of this modified example, the configuration of the first recess 810 differs from that of the semiconductor device A1 of the above embodiment. In the semiconductor device A11, the first recess 810 has a recess edge 813 and a cylindrical inner surface 814. The cylindrical inner surface 814 is cylindrical and extends from the resin main surface 81 toward the z2 side in the z direction. The recess edge 813 is located at the lower end (the z2 side end in the z direction) of the cylindrical inner surface 814. The recess edge 813 is in contact with the first surface 454a. In this modified example, the recess edge 813 is in contact with the first surface 454a at an intermediate position in the radial direction. A portion of the first surface 454a toward the radially outward side is covered by the sealing resin 8, and the remaining portion toward the radially inward side is exposed from the sealing resin 8. The outer peripheral edge of the first flange 454 surrounds the first recess 810 in a plan view. As a result, the diameter of the first recess 810 (the maximum value of the inner diameter dimension) is smaller than the outer diameter dimension of the first flange 454. In the example shown in Figure 23, the cylindrical inner surface 814 is cylindrical, but a draft angle may be provided on the cylindrical inner surface 814. If a draft angle is provided on the cylindrical inner surface 814, the cylindrical inner surface 814 is made into a conical shape that slopes so that the inner diameter dimension decreases as it approaches the z2 side in the z direction.

[0102] In the semiconductor device A11 of this modified example, the holder 451 constituting each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the z1 end in the z direction of the holder 451. The first surface 454a is in a different position from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pins 452 constituting each control terminal 45 protrude from the resin main surface 81 towards the z1 side in the z direction. With this configuration, the multiple control terminals 45 are arranged in a region surrounded by the resin main surface 81 (sealing resin 8) in a plan view. Such a semiconductor device A11 can be miniaturized in a plan view. In addition, the first surface 454a is in a different position from the resin main surface 81 in the z direction. With this configuration, the creepage distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased for adjacent control terminals 45. Therefore, semiconductor device A11 is suitable for miniaturizing in a plan view while increasing the withstand voltage of the adjacent control terminal 45. In addition, within the same configuration range as semiconductor device A1 of the above embodiment, it provides the same effects and advantages as the above embodiment.

[0103] A second modified example of the first embodiment (first aspect): Figure 24 shows a semiconductor device according to a second modification of the first embodiment. Figure 24 is an enlarged cross-sectional view of the main part of the semiconductor device A12 of this modification, and is a cross-sectional view similar to that of Figure 16. In the semiconductor device A12 of this modification, the configuration of the first recess 810 differs from that of the semiconductor device A1 of the above embodiment.

[0104] The first recess 810 has a recess edge 813, a cylindrical inner surface 814, and a tapered inner surface 815. The cylindrical inner surface 814 is cylindrical and extends from the resin main surface 81 toward the z2 side in the z direction. The tapered inner surface 815 connects to the lower end of the cylindrical inner surface 814 (the end toward the z2 side in the z direction). The recess edge 813 is located at the lower end of the tapered inner surface 815 (the end toward the z2 side in the z direction). The tapered inner surface 815 is inclined such that its inner diameter increases toward the z1 side in the z direction. The recess edge 813 is in contact with the first surface 454a. In this modified example, the recess edge 813 is in contact with the first surface 454a at an intermediate position in the radial direction. A portion of the first surface 454a toward the radially outward side is covered by the sealing resin 8, and the remaining portion toward the radially inward side is exposed from the sealing resin 8. The outer edge of the first flange portion 454 surrounds the first recess 810 in a plan view.

[0105] In the semiconductor device A12 of this modified example, the holder 451 constituting each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the z1 side end of the holder 451 in the z direction. The first surface 454a is in a different position from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pins 452 constituting each control terminal 45 protrude from the resin main surface 81 towards the z1 side in the z direction. With this configuration, the multiple control terminals 45 are arranged in a region surrounded by the resin main surface 81 (sealing resin 8) in a plan view. Such a semiconductor device A12 can be miniaturized in a plan view. In addition, the first surface 454a is in a different position from the resin main surface 81 in the z direction. With this configuration, the creepage distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased for adjacent control terminals 45. Therefore, semiconductor device A12 is suitable for miniaturizing in a plan view while increasing the withstand voltage of the adjacent control terminal 45.

[0106] The recess edge 813 located on the z2 side in the z direction of the first recess 810 is in contact with the first surface 454a of the first flange portion 454. The first recess 810 also has a tapered inner surface 815 connected to the recess edge 813, and the inner diameter of this tapered inner surface 815 increases towards the z1 side in the z direction. With this configuration, when press-fitting the metal pin 452 into the holder 451, the metal pin 452 that has entered the first recess 810 can be guided by the tapered inner surface 815 toward the holder 451 (cylindrical portion 453). Therefore, the workability when press-fitting the metal pin 452 into the holder 451 is improved. In addition, within the same range of configuration as the semiconductor device A1 of the above embodiment, the same effects and advantages as in the above embodiment are achieved.

[0107] Third modified example of the first embodiment (first aspect): Figure 25 shows a semiconductor device according to a third modification of the first embodiment. Figure 25 is an enlarged cross-sectional view of the main part of the semiconductor device A13 of this modification, and is a cross-sectional view similar to that of Figure 16. In the semiconductor device A13 of this modification, the configuration of the first recess 810 differs from that of the semiconductor device A1 of the above embodiment.

[0108] The first recess 810 has a recess edge 813, a cylindrical inner surface 814, and a tapered inner surface 815. In this modified example, the longitudinal cross-sectional shapes of the cylindrical inner surface 814 and the tapered inner surface 815 are the same as those of the semiconductor device A12 shown in Figure 24. On the other hand, in this modified example, the recess edge 813 is in contact with the radially inward end of the first surface 454a. As a result, all (or almost all) of the first surface 454a is covered with the sealing resin 8. The outer peripheral edge of the first flange 454 surrounds the first recess 810 in a plan view.

[0109] In the semiconductor device A13 of this modified example, the holder 451 constituting each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the z1 end in the z direction of the holder 451. The first surface 454a is in a different position from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pins 452 constituting each control terminal 45 protrude from the resin main surface 81 towards the z1 side in the z direction. With this configuration, the multiple control terminals 45 are arranged in a region surrounded by the resin main surface 81 (sealing resin 8) in a plan view. Such a semiconductor device A13 can be miniaturized in a plan view. In addition, the first surface 454a is in a different position from the resin main surface 81 in the z direction. With this configuration, the creepage distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased for adjacent control terminals 45. Therefore, semiconductor device A13 is suitable for miniaturizing in a plan view while increasing the withstand voltage of the adjacent control terminal 45.

[0110] The recess edge 813 located on the z2 side in the z direction of the first recess 810 is in contact with the first surface 454a of the first flange 454. The first recess 810 has a tapered inner surface 815 connected to the recess edge 813, and the inner diameter of the tapered inner surface 815 increases towards the z1 side in the z direction. With this configuration, when the metal pin 452 is press-fitted into the holder 451, the metal pin 452 that has entered the first recess 810 can be guided by the tapered inner surface 815 toward the holder 451 (cylindrical portion 453). In this modified example, the recess edge 813 is in contact with the radially inward end of the first surface 454a. This ensures that when the metal pin 452 is press-fitted into the holder 451, the metal pin 452 that has entered the first recess 810 can be reliably directed toward the holder 451 (cylindrical portion 453). Therefore, the workability when press-fitting the metal pin 452 into the holder 451 is further improved. In addition, within the same range of configuration as the semiconductor device A1 of the above embodiment, the same effects and advantages as in the above embodiment are achieved.

[0111] A fourth modified example of the first embodiment (first side view): Figure 26 shows a semiconductor device according to a fourth modification of the first embodiment. Figure 26 is an enlarged cross-sectional view of the main part of the semiconductor device A14 of this modification, and is a cross-sectional view similar to that of Figure 16. In the semiconductor device A14 of this modification, the configuration of the first recess 810 differs from that of the semiconductor device A1 of the above embodiment.

[0112] The first recess 810 has an inner recess surface 811 and a bottom recess surface 812. In the example shown in Figure 26, the inner recess surface 811 is a conical shape that slopes so that the inner diameter decreases towards the z2 side in the z direction. The bottom recess surface 812 is connected to the z2 side end of the inner recess surface 811 in the z direction and is a plane facing the z1 side in the z direction. In plan view, the bottom recess surface 812 surrounds the first surface 454a of the holder 451 (first flange portion 454). In this modified example, the bottom recess surface 812 is located closer to the z2 side in the z direction than the first surface 454a. Therefore, the first surface 454a and the bottom recess surface 812 are not flush and are located at different positions in the z direction. Also, in the example shown in Figure 26, the outer peripheral edge of the first flange portion 454 is exposed from the sealing resin 8.

[0113] In the semiconductor device A14 of this modified example, the holder 451 constituting each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the z1 end in the z direction of the holder 451. The first surface 454a is in a different position from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pins 452 constituting each control terminal 45 protrude from the resin main surface 81 towards the z1 side in the z direction. With this configuration, the multiple control terminals 45 are arranged in a region surrounded by the resin main surface 81 (sealing resin 8) in a plan view. Such a semiconductor device A14 can be miniaturized in a plan view. In addition, the first surface 454a is in a different position from the resin main surface 81 in the z direction. With this configuration, the creepage distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased for adjacent control terminals 45. Therefore, semiconductor device A14 is suitable for miniaturizing in a plan view while increasing the withstand voltage of the adjacent control terminal 45. In addition, within the same configuration range as semiconductor device A1 of the above embodiment, it provides the same effects and advantages as the above embodiment.

[0114] Fifth modified example of the first embodiment (first aspect): Figure 27 shows a semiconductor device according to a fifth modification of the first embodiment. Figure 27 is an enlarged cross-sectional view of the main part of the semiconductor device A15 of this modification, and is a cross-sectional view similar to that of Figure 16. The semiconductor device A15 of this modification further includes a first resin-filled portion 89.

[0115] In this modified example, the first resin-filled portion 89 is filled into the first recess 810 so as to fill the first recess 810. The first resin-filled portion 89 is made of epoxy resin, for example, similar to the sealing resin 8, but it may be made of a different material than the sealing resin 8. According to this modified example, it is possible to prevent foreign matter (including moisture) from entering the first recess 810 that is exposed from the sealing resin 8. The semiconductor device A15 with the above configuration is preferable in terms of durability and reliability. In addition, the semiconductor device A15 has the same effects as the semiconductor device A1 of the above embodiment.

[0116] Second embodiment (first aspect): Figures 28 and 29 show a semiconductor device according to a second embodiment of the present disclosure. Figure 28 is a perspective view showing semiconductor device A2 of this embodiment. Figure 29 is an enlarged cross-sectional view of a key part of semiconductor device A2, and is a cross-sectional view similar to that of Figure 16. In semiconductor device A2 of this embodiment, the sealing resin 8 does not have the first recess 810 described above. On the other hand, semiconductor device A2 has a plurality of first protrusions 852.

[0117] Each of the multiple first protrusions 852 projects from the resin main surface 81 toward the z1 side in the z direction. The multiple protrusions 851 are provided corresponding to each of the multiple control terminals 45 and overlap the multiple control terminals 45 in a plan view. Each metal pin 452 of the multiple control terminals 45 protrudes from the first protrusion 852. The first protrusions 852 are cylindrical in shape. The first protrusions 852 cover a portion of the holder 451 at each control terminal 45. As shown in Figure 29, the entirety of the first outer surface 453a of the cylindrical portion 453 and the second surface 454b of the first flange portion 454 of the holder 451 are in contact with the sealing resin 8. Specifically, a portion of the first outer surface 453a and the entirety of the second surface 454b are in contact with the first protrusion 852. On the other hand, the first surface 454a of the first flange portion 454 is exposed from the sealing resin 8.

[0118] The first projection 852 has a projection top surface 852a. In a plan view, the projection top surface 852a surrounds the first surface 454a of the holder 451 (first flange portion 454). Furthermore, the first surface 454a and the projection top surface 852a are flush. The first surface 454a, which is flush with the projection top surface 852a, is located at a different position from the resin main surface 81 in the z direction. Specifically, the first surface 454a is located on the z1 side in the z direction relative to the resin main surface 81.

[0119] Next, the operation of this embodiment will be described.

[0120] In the semiconductor device A2 of this modified example, the holder 451 constituting each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the z1 end in the z direction of the holder 451. The first surface 454a is in a different position from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pins 452 constituting each control terminal 45 protrude from the resin main surface 81 towards the z1 side in the z direction. With this configuration, the multiple control terminals 45 are arranged in a region surrounded by the resin main surface 81 (sealing resin 8) in a plan view. Such a semiconductor device A2 can be miniaturized in a plan view. In addition, the first surface 454a is in a different position from the resin main surface 81 in the z direction. With this configuration, the creepage distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased for adjacent control terminals 45. Therefore, semiconductor device A2 is suitable for miniaturizing in a plan view while increasing the withstand voltage of the adjacent control terminal 45.

[0121] The sealing resin 8 has a first projection 852. The first projection 852 protrudes from the main resin surface 81 toward the z1 side in the z direction. The first flange 454 is located toward the z1 side in the z direction relative to the main resin surface 81. With the sealing resin 8 having the above-described first projection 852, the first surface 454a (first flange 454) can be appropriately positioned at a different location from the main resin surface 81 in the z direction.

[0122] The semiconductor device relating to the first aspect of this disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device can be modified in various ways.

[0123] The first aspect of this disclosure includes the embodiments described in the following appendices 1 to 16.

[0124] Note 1. A conductive cylindrical holder, and at least one terminal including a metal pin inserted into the holder, A terminal support that supports the holder, The holder comprises a part of the holder and a sealing resin covering the terminal support, The sealing resin has a resin main surface facing one side in the thickness direction, The holder has a first surface located at one end in the thickness direction and a first outer surface extending in the thickness direction, The first surface is located at a different position from the main resin surface in the thickness direction, The first outer surface is in contact with the sealing resin, A semiconductor device wherein the metal pin protrudes from the main resin surface on one side in the thickness direction. Note 2. The holder includes a cylindrical portion extending in the thickness direction and a first flange portion connected to one end of the cylindrical portion in the thickness direction. The first flange portion has a first surface facing one side in the thickness direction, and a second surface located on the other side in the thickness direction from the first surface and facing the other side in the thickness direction. The cylindrical portion has the first outer surface, The semiconductor device according to Appendix 1, wherein the entirety of the first outer surface and the second surface are in contact with the sealing resin. Note 3. The sealing resin has a first recess that is recessed from the main surface of the resin to the other side in the thickness direction, The first flange portion is located on the other side in the thickness direction with respect to the main resin surface, The semiconductor device described in Appendix 2, wherein the first recess overlaps the entire cylindrical portion when viewed in the thickness direction. Note 4. The semiconductor device according to Appendix 3, wherein at least a portion of the first surface is exposed from the sealing resin. Note 5. The entirety of the first surface is exposed from the sealing resin, The first recess has an inner surface of the recess connected to the main resin surface, and a bottom surface of the recess connected to the other end of the inner surface of the recess in the thickness direction and facing one side in the thickness direction. The semiconductor device described in Appendix 4, wherein the bottom surface of the recess surrounds the first surface when viewed in the thickness direction. Note 6. The semiconductor device according to Appendix 3, wherein the first recess is located on the other side in the thickness direction and has a recess edge that is in contact with the first surface. Note 7. The first recess has a tapered inner surface that connects to the edge of the recess, The semiconductor device according to Appendix 6, wherein the tapered inner surface is inclined such that the inner diameter increases towards one side in the thickness direction. Note 8. The semiconductor device according to Appendix 6, wherein the outer peripheral edge of the first flange surrounds the first recess when viewed in the thickness direction. Note 9. The semiconductor device according to any one of appendices 3 to 8, wherein the first dimension, which is the distance in the thickness direction between the resin main surface and the first surface, is smaller than the second dimension, which is the length of the holder in the thickness direction. Note 10. The semiconductor device according to Appendix 9, wherein the ratio of the first dimension to the second dimension is 1 / 3 or more. Note 11. The semiconductor device according to Appendix 3, further comprising a first resin-filled portion filled in the first recess. Note 12. The sealing resin includes a first projection that protrudes from the main surface of the resin to one side in the thickness direction, The semiconductor device according to Appendix 2, wherein a portion of the first outer surface and the entirety of the second surface are in contact with the first protrusion. Note 13. The first projection has a projection top surface facing one side in the thickness direction, The top surface of the protruding portion surrounds the first surface when viewed in the thickness direction, The semiconductor device described in Appendix 12, wherein the first surface and the top surface of the protrusion are flush with each other. Note 14. The terminal support further comprises a support conductor that supports the terminal support and at least one semiconductor element electrically connected to at least one terminal, The semiconductor device according to Appendix 1 or 2, wherein the at least one semiconductor element is supported by the support conductor. Note 15. The semiconductor device according to Appendix 14, wherein the at least one terminal is a control terminal for controlling the at least one semiconductor element. Note 16. The support conductor includes a first conductive portion and a second conductive portion that are separated in a first direction perpendicular to the thickness direction, The at least one semiconductor element includes a first switching element joined to the first conductive portion and a second switching element joined to the second conductive portion. The control terminal includes a first control terminal for controlling the first switching element and a second control terminal for controlling the second switching element. The semiconductor device according to Appendix 15, wherein the terminal support includes a first support portion for supporting the first control terminal and a second support portion for supporting the second control terminal.

[0125] Next, a semiconductor device according to a first embodiment based on a second aspect of the present disclosure will be described with reference to Figures 30 to 44. The semiconductor device B1 of this embodiment comprises a support substrate 11, a plurality of power terminals 13, a plurality of semiconductor elements 21, a thermistor 22, a first conductive member 31, a second conductive member 32, a plurality of wires, a plurality of control terminals 45, a control terminal support 48, and a sealing resin 50. The plurality of power terminals 13 include a first power terminal 14, two second power terminals 15, and two third power terminals 16. The plurality of wires include a plurality of first wires 41, a plurality of second wires 42, a plurality of third wires 43, and a fourth wire 44.

[0126] Figure 30 is a perspective view showing semiconductor device B1. Figure 31 is a plan view showing semiconductor device B1. Figure 32 is a plan view showing semiconductor device B1, with the sealing resin 50 indicated by dashed lines. Figure 33 is a plan view showing semiconductor device B1, with the sealing resin 50 and the second conductive member 32 omitted from the plan view of Figure 32. Figure 34 is a plan view of Figure 33 with the first conductive member 31 omitted. Figure 35 is a bottom view showing semiconductor device B1. Figure 36 is a cross-sectional view along the line XXXVI-XXXVI in Figure 32. Figures 37 and 38 are enlarged partial cross-sectional views of parts of Figure 36. Figure 39 is a cross-sectional view along the line XXXIX-XXXIX in Figure 32. Figure 40 is a cross-sectional view along the line XL-XL in Figure 32. Figure 41 is a cross-sectional view along the line XLI-XLI in Figure 32. Figure 42 is a cross-sectional view along the line XLII-XLII in Figure 32. Figure 43 is a cross-sectional view along the line XLIII-XLIII in Figure 32. Figure 44 is a partially enlarged cross-sectional view, which is an enlarged portion of Figure 40.

[0127] In the following explanation, we refer to the thickness direction z, the first direction x, and the second direction y, which are all orthogonal to each other. The thickness direction z corresponds to the thickness direction of semiconductor device B1. Also, "plan view" means the view as seen in the thickness direction z. The first direction x is orthogonal to the thickness direction z. The second direction y is orthogonal to both the thickness direction z and the first direction x.

[0128] The semiconductor device B1 converts the DC power supply voltage applied to the first power terminal 14 and the two second power terminals 15 into AC power using multiple semiconductor elements 21. The converted AC power is input to a power supply target such as a motor through the two third power terminals 16.

[0129] As shown in Figures 34, 36-39, 41, and 42, the support substrate 11 supports a plurality of semiconductor elements 21 in the thickness direction z. The support substrate 11 is made of, for example, a DBC (Direct Bonded Copper) substrate. As shown in Figures 33-43, the support substrate 11 includes an insulating layer 111, a support conductor 112, and a back metal layer 113. As shown in Figures 35-43, the support substrate 11 is covered with sealing resin 50 except for a portion of the back metal layer 113.

[0130] As shown in Figures 36 to 43, the insulating layer 111 includes a portion interposed between the support conductor 112 and the back metal layer 113 in the thickness direction z. The insulating layer 111 is made of a material with relatively high thermal conductivity. The insulating layer 111 is made of ceramics, for example, aluminum nitride (AlN). In addition to ceramics, the insulating layer 111 may also be made of an insulating resin sheet.

[0131] As shown in Figures 33, 34, and 36-43, the support conductor 112 is located above (on the z1 side of) the insulating layer 111 in the thickness direction z. The composition of the support conductor 112 includes copper (Cu). As shown in Figures 42 and 43, the support conductor 112 is surrounded by the periphery of the insulating layer 111 in plan view. As shown in Figures 36-43, the support conductor 112 has a main surface 1120. The main surface 1120 is a plane facing the z1 side in the thickness direction z. As shown in Figures 33, 34, and 36-43, the support conductor 112 includes a first conductive portion 1121 and a second conductive portion 1122. The first conductive portion 1121 and the second conductive portion 1122 are rectangular in plan view. The first conductive portion 1121 and the second conductive portion 1122 are separated from each other in the first direction x. The first conductive portion 1121 is located on the x1 side of the first direction x relative to the second conductive portion 1122. Each of the multiple semiconductor elements 21 is joined to either the first conductive portion 1121 or the second conductive portion 1122.

[0132] As shown in Figures 36 to 43, the back metal layer 113 is located below the insulating layer 111 (on the z2 side) in the thickness direction z. As shown in Figure 35, the back metal layer 113 is exposed from the sealing resin 50. A heat dissipation member (e.g., a heat sink) not shown can be attached to the lower surface (the surface facing the z2 side) of the back metal layer 113. The composition of the back metal layer 113 includes copper. The back metal layer 113 is rectangular in shape in plan view. In plan view, the back metal layer 113 is surrounded by the periphery of the insulating layer 111.

[0133] Each of the multiple semiconductor elements 21 is mounted on either the first conductive part 1121 or the second conductive part 1122, as shown in Figures 34 and 36-39. Each semiconductor element 21 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In addition, each semiconductor element 21 may be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode. In the description of semiconductor device B1, the semiconductor element 21 is an n-channel type MOSFET with a vertical structure. The semiconductor element 21 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon carbide (SiC) or silicon (Si).

[0134] As shown in Figures 34 and 36-39, in the semiconductor device B1, the plurality of semiconductor elements 21 include a plurality of first elements 21A and a plurality of second elements 21B. The structure of each of the plurality of second elements 21B is the same as the structure of each of the plurality of first elements 21A. The plurality of first elements 21A are mounted on the first conductive part 1121. The plurality of first elements 21A are arranged along the second direction y. The plurality of second elements 21B are mounted on the second conductive part 1122. The plurality of second elements 21B are arranged along the second direction y. Each of the plurality of first elements 21A corresponds to the first switching element in this disclosure. Each of the plurality of second elements 21B corresponds to the second switching element in this disclosure.

[0135] As shown in Figures 34, 37, and 38, the multiple semiconductor elements 21 have a first electrode 211, a second electrode 212, a third electrode 213, and two fourth electrodes 214.

[0136] As shown in Figures 37 and 38, the first electrode 211 faces either the first conductive portion 1121 or the second conductive portion 1122. A current corresponding to the power before it is converted by the semiconductor element 21 flows through the first electrode 211. In other words, the first electrode 211 corresponds to the drain electrode of the semiconductor element 21.

[0137] As shown in Figures 34, 37, and 38, the second electrode 212 is located on the opposite side from the first electrode 211 in the thickness direction z. A current corresponding to the power converted by the semiconductor element 21 flows through the second electrode 212. In other words, the second electrode 212 corresponds to the source electrode of the semiconductor element 21.

[0138] As shown in Figure 34, the third electrode 213 is located on the same side as the second electrode 212 in the thickness direction z. A gate voltage for driving the semiconductor element 21 is applied to the third electrode 213. In other words, the third electrode 213 corresponds to the gate electrode of the semiconductor element 21. As shown in Figure 34, in a plan view, the area of ​​the third electrode 213 is smaller than the area of ​​the second electrode 212.

[0139] As shown in Figures 34, 37, and 38, the two fourth electrodes 214 are each located on the same side as the second electrode 212 in the thickness direction z, and next to the third electrode 213 in the first direction x. In the illustrated example, the two fourth electrodes 214 are positioned on either side of the third electrode 213 in the second direction y. The potential of each fourth electrode 214 is equal to the potential of the second electrode 212. The fourth electrodes 214 correspond to source sense electrodes. Unlike the illustrated example, each semiconductor element 21 may contain only one of the two fourth electrodes 214, or it may contain neither of the two fourth electrodes 214.

[0140] As shown in Figures 37 and 38, the conductive bonding layer 23 is interposed between either of the first conductive parts 1121 and 1122 and the first electrode 211 of any of the plurality of semiconductor elements 21. The conductive bonding layer 23 is, for example, solder. Alternatively, the conductive bonding layer 23 may contain a sintered body of metal particles. The first electrodes 211 of the plurality of first elements 21A are conductively bonded to the first conductive part 1121 via the conductive bonding layer 23. As a result, the first electrodes 211 of the plurality of first elements 21A are electrically connected to the first conductive part 1121. The first electrodes 211 of the plurality of second elements 21B are conductively bonded to the second conductive part 1122 via the conductive bonding layer 23. As a result, the first electrodes 211 of the plurality of second elements 21B are electrically connected to the second conductive part 1122. Unlike this embodiment, the multiple first elements 21A and the multiple second elements 21B may be mounted on a metal member different from a part of the DBC substrate or the like. In this case, the metal member corresponds to the first conductive part and the second conductive part in this disclosure. This metal member may be supported, for example, on the DBC substrate or the like.

[0141] Each of the multiple power terminals 13 conducts to the multiple semiconductor elements 21. A current corresponding to the power before it is converted by the multiple semiconductor elements 21 or a current corresponding to the power after it has been converted by the multiple semiconductor elements 21 flows through the multiple power terminals 13. The multiple power terminals 13 include a first power terminal 14, two second power terminals 15, and two third power terminals 16.

[0142] The first power terminal 14 is joined to the first conductive part 1121, as shown in Figures 33 and 39. This joining is not limited in any way and may be done by a conductive joining material (for example, solder) not shown, by laser welding, or by crimping. The first power terminal 14 is electrically connected to the first electrode 211 of the plurality of first elements 21A via the first conductive part 1121. The first power terminal 14 is the P terminal (positive electrode) to which the DC power supply voltage to be converted is applied. As shown in Figure 33, the first power terminal 14 is located on the opposite side of the second conductive part 1122 in the first direction x, with the first conductive part 1121 in between. The first power terminal 14 extends from the first conductive part 1121 to the x1 side in the first direction x and protrudes from the sealing resin 50 to the x1 side in the first direction x. As shown in Figure 32, the first power terminal 14 includes a portion covered by the sealing resin 50 and a portion exposed from 40. In the first power terminal 14, the portion covered by the sealing resin 50 is joined to the first conductive portion 1121. In addition, the portion of the first power terminal 14 exposed from the sealing resin 50 is used as the aforementioned P terminal of the semiconductor device B1.

[0143] A second conductive member 32 is joined to the two second power terminals 15. The two second power terminals 15 conduct to the second electrodes 212 of the multiple second elements 21B via the second conductive member 32. The two second power terminals 15 are N terminals (negative electrodes) to which the DC power supply voltage to be converted is applied. The two second power terminals 15 are separated from each other in the second direction y. A first power terminal 14 is located between the two second power terminals 15. As shown in Figure 33, the two second power terminals 15 are located on the same side as the first power terminal 14 with respect to the first conductive part 1121 and the second conductive part 1122 in the first direction x. The two second power terminals 15 are separated from the first conductive part 1121 and the second conductive part 1122. Each of the two second power terminals 15 extends in a first direction x and protrudes from the sealing resin 50 towards the x1 side of the first direction x. As shown in Figure 32, each of the two second power terminals 15 includes a portion covered by the sealing resin 50 and a portion exposed from the sealing resin 50. At each second power terminal 15, the second conductive member 32 is joined to the portion covered by the sealing resin 50. Furthermore, at each second power terminal 15, the portion exposed from the sealing resin 50 is used as the aforementioned N terminal of the semiconductor device B1.

[0144] The two third power terminals 16 are each joined to the second conductive part 1122, as shown in Figures 33 and 36. This joining is not limited to any particular type of conductive joining material (e.g., solder), laser welding, or crimping. The two third power terminals 16 are each electrically connected to the first electrode 211 of the plurality of second elements 21B via the second conductive part 1122. In addition, the two third power terminals 16 are each electrically connected to the second electrode 212 of the plurality of first elements 21A via the second conductive part 1122 and the first conductive member 31. AC power converted by the plurality of semiconductor elements 21 (a plurality of first elements 21A and a plurality of second elements 21B) is output from the two third power terminals 16. In other words, the two third power terminals 16 are each output terminals for the said AC power. The two third power terminals 16 are separated from each other in the second direction y. As shown in Figure 33, the two third power terminals 16 are located opposite the first conductive portion 1121 in the first direction x, with the second conductive portion 1122 in between. Each of the two third power terminals 16 extends from the second conductive portion 1122 towards the x2 side of the first direction x, and protrudes from the sealing resin 50 towards the x2 side of the first direction x. As shown in Figure 32, each of the two third power terminals 16 includes a portion covered by the sealing resin 50 and a portion exposed from the sealing resin 50. In each third power terminal 16, the portion covered by the sealing resin 50 is joined to the second conductive portion 1122. In addition, in each third power terminal 16, the portion exposed from the sealing resin 50 is used as the output terminal of the semiconductor device B1 as described above.

[0145] In this embodiment, the semiconductor device B1 comprises four first elements 21A and four second elements 21B. However, the number of first elements 21A and second elements 21B is not limited to this configuration and can be appropriately changed according to the performance required of the semiconductor device B1. In the example shown in Figure 34, four first elements 21A and four second elements 21B are arranged. The number of first elements 21A and second elements 21B may be two or three, or five or more. The number of first elements 21A and second elements 21B may be equal or different. The number of first elements 21A and second elements 21B is determined by the current capacity handled by the semiconductor device B1.

[0146] The semiconductor device B1 is configured, for example, as a half-bridge type switching circuit. In this case, a plurality of first elements 21A constitute the upper arm circuit of the semiconductor device B1, and a plurality of second elements 21B constitute the lower arm circuit. In the upper arm circuit, the plurality of first elements 21A are connected in parallel with each other, and in the lower arm circuit, the plurality of second elements 21B are connected in parallel with each other. Each first element 21A and each second element 21B are connected in series to form a bridge layer.

[0147] Each of the control terminals 45 is a pin-shaped terminal for controlling the drive of each first element 21A and each second element 21B. Each of the control terminals 45 is, for example, a press-fit terminal. The control terminals 45 include multiple first control terminals 46A to 46C and multiple second control terminals 47A to 47D. The multiple first control terminals 46A to 46C are used for controlling each first element 21A, etc. The multiple second control terminals 47A to 47D are used for controlling each second element 21B, etc.

[0148] Multiple first control terminals 46A to 46C are arranged at intervals in the second direction y. Each first control terminal 46A to 46C is supported by the first conductive part 1121 via a control terminal support 48 (first support part 48A described later), as shown in Figures 34, 39, and 40. Each first control terminal 46A to 46C is located in the first direction x between multiple first elements 21A and the first power terminal 14 and the two second power terminals 15, as shown in Figures 33 and 34.

[0149] The first control terminal 46A is a terminal (gate terminal) for inputting drive signals to multiple first elements 21A. Drive signals for driving multiple first elements 21A are input to the first control terminal 46A (for example, a gate voltage is applied).

[0150] The first control terminal 46B is a source sense terminal for detecting the source signals of multiple first elements 21A. The voltage applied to each second electrode 212 (source electrode) of multiple first elements 21A (voltage corresponding to the source current) is detected from the first control terminal 46B.

[0151] The first control terminal 46C is a terminal (drain sense terminal) for detecting the drain voltage of multiple first elements 21A. The voltage applied to each first electrode 211 (drain electrode) of multiple first elements 21A (voltage corresponding to the drain current) is detected from the first control terminal 46C.

[0152] Multiple second control terminals 47A to 47D are arranged at intervals in the second direction y. Each second control terminal 47A to 47D is supported by the second conductive part 1122 via a control terminal support 48 (second support part 48B described later), as shown in Figures 34, 39, and 43. Each second control terminal 47A to 47D is located between multiple second elements 21B and two third power terminals 16 in the first direction x, as shown in Figures 33 and 34.

[0153] The second control terminal 47A is a terminal (gate terminal) for inputting drive signals to the multiple second elements 21B. Drive signals for driving the multiple second elements 21B are input to the second control terminal 47A (for example, a gate voltage is applied). The second control terminal 47B is a terminal (source sense terminal) for detecting the source signals of the multiple second elements 21B. The voltage applied to each second electrode 212 (source electrode) of the multiple second elements 21B (voltage corresponding to the source current) is detected from the second control terminal 47B. The second control terminals 47C and 47D do not conduct to any of the multiple second elements 21B. The second control terminals 47C and 47D are terminals that conduct to the thermistor 22.

[0154] Each of the control terminals 45 (multiple first control terminals 46A to 46C and multiple second control terminals 47A to 47D) includes a holder 451 and a metal pin 452.

[0155] The holder 451 is made of a conductive material. The holder 451 is positioned on the main surface 1120 of the support conductor 112 (support substrate 11). In this embodiment, as shown in Figure 44, the holder 451 is bonded to the control terminal support 48 (the first metal layer 482 described later) via a conductive bonding layer 459. As shown in Figure 44, the holder 451 includes a cylindrical portion 453, a first flange portion 454, and a second flange portion 455.

[0156] The cylindrical portion 453 extends in the thickness direction z and is, for example, cylindrical.

[0157] The first flange portion 454 connects to the z1 end of the cylindrical portion 453 in the thickness direction z. The first flange portion 454 has a first surface 454a. The first surface 454a is a surface facing the z1 side in the thickness direction z. The first surface 454a is located at the z1 end in the thickness direction z of the holder 451. The first surface 454a forms an annular shape (a circular annular shape in the illustrated example) when viewed in the thickness direction z.

[0158] The second flange portion 455 is connected to the z2 end of the cylindrical portion 453 in the thickness direction z. In this embodiment, the second flange portion 455 is bonded to the control terminal support 48 (the first metal layer 482 described later) via a conductive bonding layer 459.

[0159] A metal pin 452 is inserted through the first flange portion 454 and a part of the cylindrical portion 453 of the holder 451. The entire holder 451 is exposed from the sealing resin 50.

[0160] The metal pin 452 is a rod-shaped member extending in the thickness direction z. The metal pin 452 is supported by the holder 451 by being press-fitted into the holder 451. The metal pin 452 is electrically connected to the control terminal support 48 (the first metal layer 482 described later) via the holder 451 and the conductive bonding layer 459. The metal pin 452 protrudes from the upper surface of the sealing resin 50 (the main resin surface 51 described later) on the z1 side in the thickness direction z.

[0161] The control terminal support 48 supports a plurality of control terminals 45. In the thickness direction z, the control terminal support 48 is interposed between the main surface 1120 of the first conductive portion 1121 and the main surface 1120 of the second conductive portion 1122 and the plurality of control terminals 45.

[0162] The control terminal support 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is positioned on the first conductive portion 1121 and supports multiple first control terminals 46A to 46C of the multiple control terminals 45. As shown in Figure 44, the first support portion 48A is bonded to the first conductive portion 1121 via a bonding layer 49. The bonding layer 49 may be conductive or insulating, but solder, for example, is used. The second support portion 48B is positioned on the second conductive portion 1122 and supports multiple second control terminals 47A to 47D of the multiple control terminals 45. The second support portion 48B is bonded to the second conductive portion 1122 via a bonding layer (not shown), similar to the first support portion 48A.

[0163] The control terminal support 48 (the first support portion 48A and the second support portion 48B, respectively) is made of, for example, a DBC (Direct Bonded Copper) substrate. The control terminal support 48 has an insulating layer 481, a first metal layer 482, and a second metal layer 483 that are laminated together.

[0164] The insulating layer 481 is made of, for example, ceramics. The insulating layer 481 is, for example, rectangular in plan view.

[0165] The first metal layer 482 is formed on the upper surface of the insulating layer 481, as shown in Figure 44 and other figures. Each control terminal 45 is erected on the first metal layer 482. The first metal layer 482 contains, for example, Cu (copper) or a Cu (copper) alloy. As shown in Figure 34 and other figures, the first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, and a fifth portion 482E. The first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, and the fifth portion 482E are separated from each other and insulated from each other.

[0166] The fourth section 482D has multiple first wires 41 joined to it, and is electrically connected to the third electrode 213 (gate electrode) of each first element 21A (each second element 21B) via each first wire 41. The fourth section 482D and the first section 482A are connected by multiple third wires 43. As a result, the first section 482A is electrically connected to the third electrode 213 (gate electrode) of each first element 21A (each second element 21B) via the third wires 43 and the first wires 41. As shown in Figure 34, the first control terminal 46A is joined to the first section 482A of the first support section 48A, and the second control terminal 47A is joined to the first section 482A of the second support section 48B.

[0167] The second portion 482B has multiple second wires 42 joined to it, and each second wire 42 provides electrical conductivity to the fourth electrode 214 (source sense electrode) of each first element 21A (each second element 21B). As shown in Figure 34, the first control terminal 46B is joined to the second portion 482B of the first support portion 48A, and the second control terminal 47B is joined to the second portion 482B of the second support portion 48B.

[0168] The second control terminal 47C is connected to the third part 482C. As shown in Figure 34, the second control terminal 47C is connected to the third part 482C of the second support part 48B. The first control terminal 46C and the second control terminal 47D are connected to the fifth part 482E. The first control terminal 46C is connected to the fifth part 482E of the first support part 48A. The fourth wire 44 is connected to the fifth part 482E of the first support part 48A, and conduction is made to the first electrode 211 (drain electrode) of each first element 21A via the fourth wire 44. The second control terminal 47D is connected to the fifth part 482E of the second support part 48B.

[0169] The thermistor 22 is electrically connected across the third portion 482C and the fifth portion 482E of the second support portion 48B. Thermistor 22 is, for example, an NTC (Negative Temperature Coefficient) thermistor. An NTC thermistor has the characteristic of its resistance decreasing gradually with increasing temperature. Thermistor 22 is used as a temperature detection sensor for the semiconductor device B1.

[0170] Each of the above-mentioned multiple first wires 41, multiple second wires 42, multiple third wires 43, and fourth wires 44 is, for example, a bonding wire. The constituent material of each first wire 41, each second wire 42, each third wire 43, and fourth wire 44 is not particularly limited and may include, for example, Au (gold), Al (aluminum), or Cu (copper). Note that in Figures 32, 36 to 40, and 43, the multiple first wires 41, multiple second wires 42, multiple third wires 43, and fourth wires 44 are omitted.

[0171] As shown in Figure 44, the second metal layer 483 is formed on the lower surface of the insulating layer 481 (the surface facing the z2 side in the thickness direction z). The second metal layer 483 of the first support portion 48A is joined to the first conductive portion 1121 via a bonding layer 49, as shown in Figure 44. The second metal layer 483 of the second support portion 48B is joined to the second conductive portion 1122 via a bonding layer (not shown), similar to the second metal layer 483 of the first support portion 48A.

[0172] As shown in Figures 33 and 36, the first conductive member 31 is electrically joined to the second electrodes 212 of a plurality of first elements 21A and to the second conductive portion 1122. As a result, the second electrodes 212 of the plurality of first elements 21A are electrically connected to the second conductive portion 1122. The composition of the first conductive member 31 is not particularly limited and includes, for example, copper. The first conductive member 31 is a metal clip. As shown in Figures 33 and 36, the first conductive member 31 has a main body portion 311, a plurality of first joint portions 312 and a plurality of second joint portions 313.

[0173] The main body portion 311 constitutes the main part of the first conductive member 31. As shown in Figure 33, the main body portion 311 extends in the second direction y. As shown in Figures 33 and 36, the main body portion 311 straddles the space between the first conductive portion 1121 and the second conductive portion 1122. As shown in Figure 33, the main body portion 311 has a plurality of through holes 310 formed therein. Each of the plurality of through holes 310 penetrates the main body portion 311 in the thickness direction z. In a plan view, the plurality of through holes 310 overlap the space between the first conductive portion 1121 and the second conductive portion 1122. This allows for good inflow of the sealing resin 50 into the main body portion 311 downward in the thickness direction z (towards the z2 side of the thickness direction z) when the sealing resin 50 is formed.

[0174] As shown in Figures 33 and 36, the multiple first joints 312 are individually joined to the second electrodes 212 of the multiple first elements 21A. Each of the multiple first joints 312 faces the second electrode 212 of any of the multiple first elements 21A. In plan view, each first joint 312 extends from the main body 311 toward the x1 side in the first direction x. In the illustrated example, the multiple first joints 312 are bifurcated from the main body 311, but they do not have to be bifurcated. The base end of each first joint 312 (the end that connects to the main body 311) is bent downward in the thickness direction z (towards the z2 side of the thickness direction z). Therefore, the tip of each first joint 312 (the end opposite to the side that connects to the main body 311) is located below the main body 311 in the thickness direction z (towards the z2 side of the thickness direction z).

[0175] As shown in Figures 33 and 36, the multiple second joints 313 are joined to the second conductive portion 1122. Each of the multiple second joints 313 faces the second conductive portion 1122. In plan view, each second joint 313 extends from the main body 311 towards the x1 side in the first direction x. The base end of each second joint 313 (the end that connects to the main body 311) is bent downward in the thickness direction z (towards the z2 side of the thickness direction z). Therefore, the tip of each second joint 313 (the end opposite to the side that connects to the main body 311) is located below the main body 311 in the thickness direction z (towards the z2 side of the thickness direction z).

[0176] As shown in Figure 37, the semiconductor device B1 further comprises a first conductive bonding layer 33. The first conductive bonding layer 33 is interposed between the second electrodes 212 of the plurality of first elements 21A and the plurality of first bonding portions 312. The first conductive bonding layer 33 conductively bonds the second electrodes 212 of the plurality of first elements 21A and the plurality of first bonding portions 312. The first conductive bonding layer 33 is, for example, solder. Alternatively, the first conductive bonding layer 33 may contain a sintered body of metal particles.

[0177] As shown in Figure 36, the semiconductor device B1 further comprises a second conductive bonding layer 34. The second conductive bonding layer 34 is interposed between the second conductive portion 1122 and the second bonding portion 313. The second conductive bonding layer 34 conductively bonds the second conductive portion 1122 and the second bonding portion 313. The second conductive bonding layer 34 is, for example, solder. Alternatively, the second conductive bonding layer 34 may contain a sintered body of metal particles.

[0178] As shown in Figure 32, the second conductive member 32 is electrically connected to the second electrodes 212 of the plurality of second elements 21B and to the two second power terminals 15. As a result, the second electrodes 212 of the plurality of second elements 21B are electrically connected to the two second power terminals 15. The composition of the second conductive member 32 is not particularly limited and includes, for example, copper. The second conductive member 32 is a metal clip. As shown in Figures 32, 36 and 39 to 42, the second conductive member 32 has a pair of main body portions 321, a plurality of third joint portions 322, a pair of fourth joint portions 324, a plurality of intermediate portions 326, a plurality of crossbeam portions 327, and a pair of hanging portions 328.

[0179] As shown in Figure 32, the pair of main body portions 321 are located apart from each other in the second direction y. The pair of main body portions 321 extend in the first direction x. As shown in Figures 36 and 40, the pair of main body portions 321 are arranged parallel to the upper surface of the first conductive portion 1121 and the upper surface of the second conductive portion 1122. The pair of main body portions 321 are located further away from the first conductive portion 1121 and the second conductive portion 1122 than the main body portion 311 of the first conductive member 31.

[0180] As shown in Figures 32, 41, and 42, the multiple intermediate sections 326 are located apart from each other in the second direction y and between the pair of main body sections 321 in the second direction y. The multiple intermediate sections 326 extend in the first direction x.

[0181] As shown in Figures 32 and 42, the multiple third joints 322 are individually joined to the second electrodes 212 of the multiple second elements 21B. Each of the multiple third joints 322 faces one of the second electrodes 212 of the multiple second elements 21B. In plan view, the multiple third joints 322 extend from the multiple intermediate sections 326 in the second direction y. The base end of each third joint 322 (the end that connects to the intermediate section 326) is bent downward in the thickness direction z (towards the z2 side of the thickness direction z). Therefore, the tip of each third joint 322 (the end opposite to the side that connects to the intermediate section 326) is located below the intermediate section 326 in the thickness direction z (towards the z2 side of the thickness direction z).

[0182] As shown in Figures 32 and 36, the pair of fourth junctions 324 are individually connected to the two second power terminals 15. Each of the pair of fourth junctions 324 faces the corresponding one of the two second power terminals 15.

[0183] As shown in Figure 32, the multiple crossbeam sections 327 are arranged along the second direction y. In plan view, the multiple crossbeam sections 327 include regions that individually overlap with the multiple first joints 312 of the first conductive member 31. As shown in Figures 32 and 41, the crossbeam section 327 located in the center of the multiple crossbeam sections 327 in the second direction y has both sides in the second direction y connected to the multiple intermediate sections 326. The remaining two crossbeam sections 327 have both sides in the second direction y connected to either of the pair of main body sections 321 and either of the multiple intermediate sections 326.

[0184] As shown in Figures 32 and 41, the pair of hanging sections 328 are individually connected to the pair of main body sections 321. As shown in Figure 41, each of the pair of hanging sections 328 extends downward in the thickness direction z (towards the z2 side of the thickness direction z) from the corresponding one of the pair of main body sections 321. Each of the pair of hanging sections 328 is connected to the outer edge in the second direction y with respect to the corresponding one of the pair of main body sections 321. In the illustrated example, the lower ends of the pair of hanging sections 328 (the edges on the z2 side of the thickness direction z) overlap the first conductive section 1121 when viewed along the second direction y.

[0185] As shown in Figure 38, the semiconductor device B1 further comprises a third conductive bonding layer 35. The third conductive bonding layer 35 is interposed between the second electrodes 212 of the plurality of second elements 21B and the plurality of third bonding portions 322. The third conductive bonding layer 35 conductively bonds the second electrodes 212 of the plurality of second elements 21B and the plurality of third bonding portions 322. The third conductive bonding layer 35 is, for example, solder. Alternatively, the third conductive bonding layer 35 may contain a sintered body of metal particles.

[0186] As shown in Figure 36, the semiconductor device B1 further comprises a fourth conductive bonding layer 36. The fourth conductive bonding layer 36 is interposed between the two second power terminals 15 and the pair of fourth bonding portions 324. The fourth conductive bonding layer 36 conductively bonds the two second power terminals 15 and the pair of fourth bonding portions 324. The fourth conductive bonding layer 36 is, for example, solder. Alternatively, the fourth conductive bonding layer 36 may contain a sintered body of metal particles.

[0187] As shown in Figures 30 to 43, the encapsulating resin 50 covers a plurality of semiconductor elements 21, a first conductive member 31, a second conductive member 32, a plurality of first wires 41, a plurality of second wires 42, and a plurality of third wires 43. Furthermore, the encapsulating resin 50 covers a portion of each of the support substrate 11, a plurality of power terminals 13, and a control terminal support 48. The encapsulating resin 50 has electrical insulating properties. The encapsulating resin 50 includes, for example, a black epoxy resin. The encapsulating resin 50 is formed, for example, by molding. As shown in Figures 30 to 32 and Figures 35 to 43, the encapsulating resin 50 has a resin main surface 51, a resin back surface 52, a plurality of resin side surfaces 531 to 534, a plurality of first recesses 511, and a pair of recesses 531a.

[0188] As shown in Figures 36 and 39-43, the resin main surface 51 faces the same direction in the thickness direction z as the upper surface (main surface 1120) of the first conductive part 1121 and the upper surface (main surface 1120) of the second conductive part 1122. Multiple metal pins 452 of the control terminals 45 (multiple first control terminals 46A-46C and multiple second control terminals 47A-47D) protrude from the resin main surface 51. As shown in Figures 36 and 39-43, the resin back surface 52 faces the opposite side from the resin main surface 51 in the thickness direction z. As shown in Figure 35, the resin back surface 52 is frame-shaped in plan view, surrounding the lower surface (the surface facing z2 in the thickness direction z) of the back metal layer 113 of the support substrate 3. The back metal layer 113 of the support substrate 11 is exposed from this resin back surface 52. The lower surface of the back metal layer 113 (the surface facing the z2 side in the thickness direction z) is flush with, for example, the resin back surface 52.

[0189] As shown in Figures 31, 32, 36, and 39, the resin side surfaces 531 and 532 are separated from each other in a first direction x. The resin side surfaces 531 and 532 face opposite each other in the first direction x and extend in a second direction y. The resin side surfaces 531 and 532 are connected to the resin main surface 51. The resin side surface 531 faces the x1 side in the first direction x, and the resin side surface 532 faces the x2 side in the first direction x. The first power terminal 14 and the two second power terminals 15 protrude from the resin side surface 531, respectively. The two third power terminals 16 protrude from the resin side surface 532, respectively.

[0190] As shown in Figures 31, 32 and 40-43, resin side surfaces 533 and 534 are separated from each other in the second direction y. Resin side surfaces 533 and 534 face opposite each other in the second direction y and extend in the first direction x. Resin side surfaces 533 and 534 are connected to the resin main surface 51 and the resin back surface 52. Resin side surface 533 faces the y1 side in the second direction y, and resin side surface 534 faces the y2 side in the second direction y.

[0191] As shown in Figures 30, 39, 40, 43, and 44, each of the multiple first recesses 511 is recessed from the resin main surface 51 toward the z2 side in the thickness direction z. In this embodiment, the multiple first recesses 511 are individually provided corresponding to each of the multiple control terminals 45. The multiple control terminals 45 are individually arranged corresponding to each of the multiple first recesses 511.

[0192] As shown in Figures 31, 39, 40, 43, and 44, the first recess 511 overlaps all of the holders 451 on the corresponding control terminals 45 in a plan view. In this embodiment, as shown in Figure 44, the first recess 511 has an inner surface 512 and a chamfered portion 515. The inner surface 512 of the first recess extends in the thickness direction z and has a conical shape that slopes so that the inner diameter dimension decreases towards the z2 side in the thickness direction z.

[0193] As shown in Figure 44, the inner surface 512 of the first recess has a first edge 513 and a second edge 514. The first edge 513 is located at the z2 side of the thickness direction z on the inner surface 512 of the first recess and is in contact with the control terminal support 48 (first metal layer 482). The second edge 514 is located at the z1 side of the thickness direction z on the inner surface 512 of the first recess. In plan view, the second edge 514 surrounds the first edge 513.

[0194] The chamfered portion 515 is connected to the main resin surface 51 and is interposed between the main resin surface 51 and the inner surface 512 of the first recess. The specific shape of the chamfered portion 515 is not particularly limited and can be, for example, a curved R-chamfered shape or a C-chamfered shape. In the illustrated example, the chamfered portion 515 has an R-chamfered shape.

[0195] Such a first recess 511 is the trace of forming the sealing resin 50 by molding while pressing the control terminal support 48 with, for example, a pin having a shape corresponding to the first recess 511. Figure 45 shows one step in the manufacturing process of the semiconductor device B1 and is a cross-sectional view similar to that of Figure 44. As shown in Figure 45, for example, a cylindrical pin 911 is provided in the mold 91 for molding. A holder 451 is placed in the inner space of the cylindrical pin 911, and a fluid resin material is injected into the cavity space 919 of the mold 91 while pressing the lower end of the cylindrical pin 911 (the end on the z2 side in the thickness direction z) against the control terminal support 48 (first metal layer 482). As can be seen from Figures 44 and 45, the inner surface 512 of the first recess 511 is a draft angle corresponding to the outer surface of the cylindrical pin 911. Also, as shown in Figure 45, a rounded corner portion 915 is provided at the base of the cylindrical pin 911 in the mold 91. The chamfered portion 515 of the first recess 511 has a shape corresponding to the rounded corner portion 915 of the mold 91. After the sealing resin 50 is formed by mold molding using the mold 91, the holder 451, which is positioned in the inner space of the cylindrical pin 911, is completely exposed from the sealing resin 50.

[0196] Depending on the arrangement of the holder 451 of the control terminal 45, during mold molding, the lower end of the cylindrical pin 911 shown in Figure 45 may be pressed so as to straddle the first metal layer 482 and the insulating layer 481. On the insulating layer 481, there is a step in the thickness direction z at the boundary between the area where the first metal layer 482 is formed and the area where the first metal layer 482 is not formed. Therefore, when the lower end of the cylindrical pin 911 is pressed so as to straddle the first metal layer 482 and the insulating layer 481, a gap may be created between the lower end of the cylindrical pin 911 and the control terminal support 48 (insulating layer 481). Considering such cases, a method can be adopted in which, for example, a resist layer is formed on the upper surface of the insulating layer 481 in the area where the first metal layer 482 is not formed, thereby eliminating the above-mentioned step between the area where the first metal layer 482 is formed and the area where it is not formed on the insulating layer 481. Alternatively, the lower end of the cylindrical pin 911 may be made of a cushioning material. In this case, when the cylindrical pin 911 is pressed against the control terminal support 48, the step difference is absorbed by the cushioning material, preventing a gap from forming between the lower end of the cylindrical pin 911 and the control terminal support 48 (insulating layer 481).

[0197] The method for forming the first recess 511 is not limited to the method described above with reference to Figure 45. For example, the sealing resin 50 may be formed by molding while pressing the control terminal support 48 with a columnar solid pin corresponding to the first recess 511. In this case, the holder 451 is not placed on the control terminal support 48 during molding. After molding, the holder 451 is placed in the first recess 511 on the control terminal support 48.

[0198] In the illustrated example, the first surface 454a of the holder 451 (first flange portion 454) is located on the z2 side in the thickness direction z relative to the resin main surface 51. As a result, the entire holder 451 is housed in the first recess 511.

[0199] As shown in Figure 31, the pair of recesses 531a are recessed from the resin side surface 531 toward the x2 side in the first direction x. The pair of recesses 531a extend from the resin main surface 51 to the resin back surface 52 in the thickness direction z. The pair of recesses 531a are located on both sides of the first power terminal 14 in the second direction y.

[0200] Next, the operation of this embodiment will be described.

[0201] Each control terminal 45 is composed of a holder 451, which is positioned on the main surface 1120 of the support conductor 112 (support substrate 11). Each control terminal 45 is composed of a metal pin 452 which protrudes from the resin main surface 51 towards the z1 side in the thickness direction z. With this configuration, the multiple control terminals 45 are arranged in a region surrounded by the resin main surface 51 (sealing resin 50) in a plan view. Such a semiconductor device B1 can be miniaturized in a plan view.

[0202] The holders 451 of each control terminal 45 are all exposed from the sealing resin 50. With this configuration, it is possible to prevent the sealing resin 50 from flowing into the inside of the holder 451 into which the metal pins 452 are inserted. Therefore, in the semiconductor device B1, the conductivity of the holders 451 and the metal pins 452 can be properly maintained, and the control terminals 45, which are composed of the holders 451 and the metal pins 452, can be made to function properly.

[0203] Multiple control terminals 45 are arranged in first recesses 511 of the sealing resin 50. In this embodiment, the sealing resin 50 has multiple first recesses 511, and the multiple control terminals 45 are individually arranged corresponding to each of the multiple first recesses 511. The first recess 511 (inner surface 512 of the first recess) has a first edge 513 that is in contact with the control terminal support 48 (first metal layer 482). With this configuration, the creepage distance along the surface of the sealing resin 50 (main resin surface 51, inner surface 512 of the first recess 511, etc.) can be increased for adjacent control terminals 45. Therefore, the semiconductor device B1 is suitable for increasing the withstand voltage of adjacent control terminals 45 while achieving miniaturization in plan view.

[0204] The first recess 511 overlaps all of the holder 451 on the corresponding control terminal 45 in a plan view. With this configuration, the holder 451 surrounded by the first recess 511 is easily visible in a plan view. This improves the workability when pressing the metal pin 452 into the holder 451.

[0205] The following describes modifications of the semiconductor device based on the second aspect of this disclosure. The configurations of the parts in each modification are interchangeable to the extent that no technical inconsistencies arise.

[0206] Figures 46 to 48 show a semiconductor device according to a first modification of the first embodiment from a second side view. Figure 46 is a plan view showing the semiconductor device B11 of this modification. Figure 47 is a cross-sectional view along the line XLVII-XLVII in Figure 46. Figure 48 is a cross-sectional view along the line XLVIII-XLVIII in Figure 46. In the drawings from Figure 46 onward, elements that are the same as or similar to those in the semiconductor device B1 of the above embodiment are denoted by the same reference numerals as in the above embodiment, and their descriptions are omitted as appropriate.

[0207] In the semiconductor device B11 of this modified example, the configuration of the first recess 511 in the sealing resin 50 differs from that of the semiconductor device B1 of the above embodiment. As shown in Figures 46 to 48, in the semiconductor device B11, the sealing resin 50 has two first recesses 511. One of the two first recesses 511 corresponds to a plurality of control terminals 45 (first control terminals 46A to 46C), and the plurality of control terminals 45 (first control terminals 46A to 46C) are arranged in this one first recess 511. In a plan view, one of the first recesses 511 overlaps with all of the holders 451 for each of the plurality of control terminals 45 (first control terminals 46A to 46C). Of the two first recesses 511, the other first recess 511 corresponds to a plurality of control terminals 45 (second control terminals 47A to 47D), and the plurality of control terminals 45 (second control terminals 47A to 47D) are arranged in the other first recess 511. In a plan view, the other first recess 511 overlaps with all of the holders 451 for each of the plurality of control terminals 45 (second control terminals 47A to 47D).

[0208] In the semiconductor device B11 of this modified example, the holders 451 constituting each control terminal 45 are arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pins 452 constituting each control terminal 45 protrude from the resin main surface 51 towards the z1 side in the thickness direction z. With this configuration, the multiple control terminals 45 are arranged in a region surrounded by the resin main surface 51 (sealing resin 50) in a plan view. Such a semiconductor device B11 can be miniaturized in a plan view.

[0209] The holders 451 of each control terminal 45 are all exposed from the sealing resin 50. With this configuration, it is possible to prevent the sealing resin 50 from flowing into the inside of the holder 451 into which the metal pins 452 are inserted. Therefore, in the semiconductor device B11, the conductivity of the holders 451 and the metal pins 452 can be properly maintained, and the control terminals 45, which are composed of the holders 451 and the metal pins 452, can be made to function properly.

[0210] Multiple control terminals 45 are arranged in the first recesses 511 of the sealing resin 50. In the semiconductor device B11, the sealing resin 50 has two first recesses 511. Multiple control terminals 45 (first control terminals 46A to 46C) are arranged in one of the first recesses 511, and multiple control terminals 45 (second control terminals 47A to 47D) are arranged in the other first recess 511. With this configuration in which multiple control terminals 45 are arranged together in one first recess 511, the sealing resin 50 can be formed relatively easily by mold molding.

[0211] Figure 49 shows a semiconductor device according to a second modification of the first embodiment from a second side view. Figure 49 is a cross-sectional view of the semiconductor device B12 of this modification, and is a cross-sectional view similar to that of Figure 40. The semiconductor device B12 of this modification further comprises a first resin part 55, and differs from the semiconductor device B1 of the above embodiment in that it comprises the first resin part 55.

[0212] The first resin part 55 fills at least a portion of the first recess 511 and is in contact with at least a portion of the holder 451. In the semiconductor device B12, the first resin part 55 is filled into each of the first recesses 511 so as to fill each of the first recesses 511. The first resin part 55 covers the entire holder 451 which is placed in the first recess 511. The constituent material of the first resin part 55 is not particularly limited. The first resin part 55 may be made of the same material as the sealing resin 50, or it may be made of a different material. In the semiconductor device B12, for example, the constituent material of the first resin part 55 is different from the constituent material of the sealing resin 50. In the semiconductor device B12, for example, the elastic modulus of the first resin part 55 is smaller than the elastic modulus of the sealing resin 50. In this case, where the elastic modulus of the first resin part 55 is smaller than the elastic modulus of the sealing resin 50, the constituent material of the first resin part 55 is not particularly limited and examples include silicone resin and silicone gel.

[0213] In the semiconductor device B12 of this modified example, the holders 451 constituting each control terminal 45 are arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pins 452 constituting each control terminal 45 protrude from the resin main surface 51 towards the z1 side in the thickness direction z. With this configuration, the multiple control terminals 45 are arranged in a region surrounded by the resin main surface 51 (sealing resin 50) in a plan view. Such a semiconductor device B12 can be miniaturized in a plan view.

[0214] The holders 451 of each control terminal 45 are all exposed from the sealing resin 50. With this configuration, it is possible to prevent the sealing resin 50 from flowing into the inside of the holder 451 into which the metal pins 452 are inserted. Therefore, in the semiconductor device B12, the conductivity of the holders 451 and the metal pins 452 can be properly maintained, and the control terminals 45, which are composed of the holders 451 and the metal pins 452, can be made to function properly.

[0215] In the semiconductor device B12, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers a holder 451 positioned in each first recess 511. The elastic modulus of the first resin portion 55 is less than that of the sealing resin 50. With this configuration, the stress around the holder 451 covered by the first resin portion 55 can be reduced. Furthermore, by providing the first resin portion 55 in the semiconductor device B12, it is possible to prevent foreign matter (including moisture) from entering the first recess 511 exposed from the sealing resin 50. The semiconductor device B12 with the above configuration is preferable for improving durability and reliability. In addition, the semiconductor device B12 has the same effects and advantages as the above embodiment within the same range of configuration as the semiconductor device B1 of the above embodiment.

[0216] Figure 50 shows a semiconductor device according to a third modification of the first embodiment. Figure 50 is a cross-sectional view of the semiconductor device B13 of this modification, and is a cross-sectional view similar to that of Figure 47. The semiconductor device B13 of this modification further comprises a first resin part 55, and differs from the semiconductor device B11 of the above modification in that it comprises the first resin part 55.

[0217] The first resin part 55 fills at least a portion of the first recess 511 and is in contact with at least a portion of the holder 451. In the semiconductor device B13, the first resin part 55 fills a portion of the first recess 511. The first resin part 55 covers a portion of each of the plurality of holders 451 arranged in the first recess 511. The constituent material of the first resin part 55 is not particularly limited. The first resin part 55 may be made of the same material as the sealing resin 50, or it may be made of a different material. In the semiconductor device B13, for example, the constituent material of the first resin part 55 is different from the constituent material of the sealing resin 50. In the semiconductor device B13, for example, the elastic modulus of the first resin part 55 is greater than the elastic modulus of the sealing resin 50. In this case, the constituent material of the first resin part 55 is not particularly limited, and examples include epoxy potting material.

[0218] In the semiconductor device B13 of this modified example, the holders 451 constituting each control terminal 45 are arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pins 452 constituting each control terminal 45 protrude from the resin main surface 51 towards the z1 side in the thickness direction z. With this configuration, the multiple control terminals 45 are arranged in a region surrounded by the resin main surface 51 (sealing resin 50) in a plan view. Such a semiconductor device B13 can be miniaturized in a plan view.

[0219] The holders 451 of each control terminal 45 are all exposed from the sealing resin 50. With this configuration, it is possible to prevent the sealing resin 50 from flowing into the inside of the holder 451 into which the metal pins 452 are inserted. Therefore, in the semiconductor device B13, the conductivity of the holders 451 and the metal pins 452 can be properly maintained, and the control terminals 45, which are composed of the holders 451 and the metal pins 452, can be made to function properly.

[0220] In the semiconductor device B13, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers at least a part of the holder 451 placed in each first recess 511. The elastic modulus of the first resin portion 55 is greater than that of the sealing resin 50. With this configuration, the seismic resistance performance of the holder 451 covered by the first resin portion 55 is improved. The semiconductor device B13 with the above configuration is preferable for improving performance. In addition, the semiconductor device B13 has the same effects as the semiconductor device B11 of the above modification.

[0221] Figure 51 shows a semiconductor device according to a fourth modification of the first embodiment from a second side view. Figure 51 is a cross-sectional view of the semiconductor device B14 of this modification, and is a cross-sectional view similar to that of Figure 40. The semiconductor device B14 of this modification further comprises a first resin portion 55. In addition, in the semiconductor device B14, the dimension of the sealing resin 50 in the thickness direction z is smaller than that of the semiconductor device B1 of the above embodiment, and accordingly, the dimension of each first recess 511 in the thickness direction z is also smaller than that of the above semiconductor device B1. The holder 451 of each control terminal 45 protrudes from the main resin surface 51 of the sealing resin 50 towards the z1 side in the thickness direction z. The first surface 454a of the holder 451 (first flange portion 454) is located on the z1 side in the thickness direction z relative to the main resin surface 51. As a result, a part of the holder 451 is housed in the first recess 511.

[0222] The first resin part 55 fills at least a portion of the first recess 511 and contacts at least a portion of the holder 451. In the semiconductor device B14, the first resin part 55 is filled into each of the first recesses 511 so as to fill each of the first recesses 511. The constituent material of the first resin part 55 is not particularly limited. The first resin part 55 may be made of the same material as the sealing resin 50, or it may be made of a different material. In the semiconductor device B14, for example, the constituent material of the first resin part 55 is different from the constituent material of the sealing resin 50. In the semiconductor device B14, for example, the elastic modulus of the first resin part 55 is smaller than the elastic modulus of the sealing resin 50. In this case, the constituent material of the first resin part 55 is not particularly limited and examples include silicone resin and silicone gel.

[0223] In the semiconductor device B14, the first resin portion 55 has a portion located on the z1 side in the thickness direction z relative to the main resin surface 51. The portion of the first resin portion 55 located on the z1 side in the thickness direction z relative to the main resin surface 51 is, for example, a portion that has risen on the z1 side in the thickness direction z relative to the outer circumferential surface of the holder 451 (cylindrical portion 453) due to the surface tension of the first resin portion 55. In the illustrated example, the first surface 454a of the holder 451 (first flange portion 454) is exposed from the first resin portion 55.

[0224] In the semiconductor device B14 of this modified example, the holders 451 constituting each control terminal 45 are arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pins 452 constituting each control terminal 45 protrude from the resin main surface 51 toward the z1 side in the thickness direction z. With this configuration, the multiple control terminals 45 are arranged in a region surrounded by the resin main surface 51 (sealing resin 50) in a plan view. Such a semiconductor device B14 can be miniaturized in a plan view.

[0225] The holders 451 of each control terminal 45 are all exposed from the sealing resin 50. With this configuration, it is possible to prevent the sealing resin 50 from flowing into the inside of the holder 451 into which the metal pins 452 are inserted. Therefore, in the semiconductor device B14, the conductivity of the holders 451 and the metal pins 452 can be properly maintained, and the control terminals 45, which are composed of the holders 451 and the metal pins 452, can be made to function properly.

[0226] In semiconductor device B14, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers the holder 451 positioned in each first recess 511. The elastic modulus of the first resin portion 55 is smaller than that of the sealing resin 50. With this configuration, the stress around the holder 451 covered by the first resin portion 55 can be reduced. In addition, in semiconductor device B14, the first surface 454a of each holder 451 is exposed from the first resin portion 55. This allows the metal pin 452 to be press-fitted into the holder 451 after the first resin portion 55 has been filled into the first recess 511. The process of press-fitting the metal pin 452 into the holder 451 is made more stable. Furthermore, semiconductor device B14 exhibits the same effects and advantages as semiconductor device B1 in the above embodiment, within the same range of configuration as semiconductor device B1 in the above embodiment.

[0227] Figures 52 and 53 show a semiconductor device according to a fifth modification of the first embodiment from a second side view. Figure 52 is a plan view showing the semiconductor device B15 of this modification. Figure 53 is a cross-sectional view along the line LIII-LIII in Figure 52. In the semiconductor device B15 of this modification, the sealing resin 50 has a plurality of second recesses 517. The fact that the sealing resin 50 has second recesses 517 is different from the semiconductor device B1 of the above embodiment.

[0228] The second recess 517 is recessed from the resin main surface 51 towards the z2 side in the thickness direction z. In the semiconductor device B15, the sealing resin 50 has a plurality of second recesses 517. Each of the plurality of second recesses 517 is provided corresponding to one of the plurality of first recesses 511. As shown in Figure 52, in plan view, the second recess 517 surrounds the corresponding first recess 511. In the illustrated example, the second recess 517 is annular in plan view.

[0229] As shown in Figure 53, the second recess 517 has a second recess bottom surface 518. The second recess bottom surface 518 is located at the z2 side end of the second recess 517 in the thickness direction z. The second recess bottom surface 518 is spaced away from the control terminal support 48 on the z1 side in the thickness direction z.

[0230] In the semiconductor device B15 of this modified example, the holders 451 constituting each control terminal 45 are arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pins 452 constituting each control terminal 45 protrude from the resin main surface 51 towards the z1 side in the thickness direction z. With this configuration, the multiple control terminals 45 are arranged in a region surrounded by the resin main surface 51 (sealing resin 50) in a plan view. Such a semiconductor device B15 can be miniaturized in a plan view.

[0231] The holders 451 of each control terminal 45 are all exposed from the sealing resin 50. With this configuration, it is possible to prevent the sealing resin 50 from flowing into the inside of the holder 451 into which the metal pins 452 are inserted. Therefore, in the semiconductor device B15, the conductivity of the holders 451 and the metal pins 452 can be properly maintained, and the control terminals 45, which are composed of the holders 451 and the metal pins 452, can be made to function properly.

[0232] In semiconductor device B15, the sealing resin 50 has a second recess 517. The second recess 517 surrounds the first recess 511 in a plan view. The z2 side end of the second recess 517 in the thickness direction z (the bottom surface 518 of the second recess) is spaced apart from the control terminal support 48 on the z1 side in the thickness direction z. With this configuration, the creepage distance along the surface of the sealing resin 50 (resin main surface 51, the inner surface 512 of the first recess 511, the second recess 517, etc.) can be increased for the control terminal 45 surrounded by the second recess 517 in a plan view and for the control terminal 45 adjacent to it. Semiconductor device B15 can be miniaturized in a plan view while increasing the withstand voltage of adjacent control terminals 45. In addition, semiconductor device B15 has the same effects as the above embodiment within the same configuration range as semiconductor device B1 of the above embodiment.

[0233] The semiconductor device relating to this disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device relating to this disclosure can be modified in various ways.

[0234] In the embodiments and modifications described above, the case in which all of the holders 451 are exposed from the sealing resin 50 for each of the multiple control terminals 45 has been described, but the disclosure is not limited thereto. For example, the holders 451 may be covered by the sealing resin 50 for some of the multiple control terminals 45.

[0235] A second aspect of this disclosure includes the configurations described in the following appendices 1B to 17B. Note 1B. A support substrate having a main surface facing one side in the thickness direction, A holder disposed on the main surface and having conductivity, and at least one terminal including a metal pin inserted into the holder, A sealing resin having a resin main surface facing one side in the thickness direction and covering at least a portion of the support substrate, At least one of the aforementioned terminals is exposed from the sealing resin, the entire holder is exposed. The semiconductor device, wherein the metal pin protrudes on one side in the thickness direction from the resin main surface. Appended Note 2B. The semiconductor device further includes a terminal support body interposed between the support substrate and the at least one terminal in the thickness direction. The semiconductor device according to Appended Note 1B, wherein the holder is supported by the terminal support body. Appended Note 3B. The semiconductor device according to Appended Note 2B, wherein the encapsulation resin covers a part of the terminal support body. Appended Note 4B. The semiconductor device includes a plurality of the terminals. The encapsulation resin has at least one first recess recessed on the other side in the thickness direction from the resin main surface. The at least one first recess has a first edge contacting the terminal support body. The semiconductor device according to Appended Note 3B, wherein the plurality of terminals are arranged in the at least one first recess. Appended Note 5B. The semiconductor device includes a plurality of the first recesses. The plurality of terminals are individually arranged corresponding to the plurality of the first recesses respectively. The semiconductor device according to Appended Note 4B, wherein each of the plurality of the first recesses overlaps all of the holders in the corresponding terminal when viewed in the thickness direction. Appended Note 6B. The semiconductor device according to Appended Note 4B, wherein the first recess overlaps all of the holders in the plurality of the terminals when viewed in the thickness direction. Appended Note 7B. The semiconductor device further includes a first resin portion filling at least a part of the first recess. The semiconductor device according to Appended Note 5B or 6B, wherein the first resin portion contacts at least a part of the holder. Appended Note 8B. The constituent material of the first resin portion is different from the constituent material of the encapsulation resin. The semiconductor device according to Appended Note 7B, wherein the elastic modulus of the first resin portion is smaller than the elastic modulus of the encapsulation resin. Appended Note 9B. The constituent material of the first resin portion is different from the constituent material of the encapsulation resin. The semiconductor device according to Appendix 7B, wherein the elastic modulus of the first resin portion is greater than the elastic modulus of the sealing resin. Note 10B. The sealing resin has a second recess that is recessed from the main surface of the resin to the other side in the thickness direction, The semiconductor device according to any one of appendices 4B to 9B, wherein the second recess surrounds the first recess when viewed in the thickness direction. Note 11B. The second recess has a bottom surface located at the other end in the thickness direction, The semiconductor device according to Appendix 10B, wherein the bottom surface of the second recess is spaced apart from the terminal support on one side in the thickness direction. Note 12B. The at least one first recess includes the inner surface of the first recess, The inner surface of the first recess has a first edge located at the other end in the thickness direction and a second edge located at one end in the thickness direction. The semiconductor device described in any of appendices 4B to 11B (or any of appendices 4B to 6B), wherein the second edge surrounds the first edge when viewed in the thickness direction. Note 13B. The semiconductor device according to Appendix 12B, wherein the at least one first recess has a chamfered portion interposed between the resin main surface and the inner surface of the first recess. Note 14B. The holder has a first surface located at one end in the thickness direction, The first surface is located on the other side in the thickness direction relative to the resin main surface, and is a semiconductor device according to any of appendices 1B to 13B (or any of appendices 1B to 6B). Note 15B. A semiconductor device according to any one of appendices 2B to 13B (or any one of appendices 2B to 6B), further comprising at least one semiconductor element disposed on the main surface and electrically connected to at least one terminal. Note 16B. The semiconductor device according to Appendix 15B, wherein the at least one terminal is a control terminal for controlling the at least one semiconductor element. Note 17B. The support substrate includes a first conductive portion and a second conductive portion that are separated in a first direction perpendicular to the thickness direction, The at least one semiconductor element includes a first switching element joined to the first conductive portion and a second switching element joined to the second conductive portion. The control terminal includes a first control terminal for controlling the first switching element and a second control terminal for controlling the second switching element. The semiconductor device according to Appendix 16B, wherein the terminal support includes a first support portion for supporting the first control terminal and a second support portion for supporting the second control terminal. [Explanation of Symbols]

[0236] (Explanation of symbols related to the first aspect) A1, A11, A12, A13, A14, A15, A2: Semiconductor equipment 10A: First semiconductor element 10B: Second semiconductor element 101: Main surface of the element 102: Back surface of the element 11: First main surface electrode 12: Second main surface electrode 121: Gate finger 13: Third main surface electrode 15: Back electrode 17: Thermistor 19: Conductive bonding material 3: Support substrate 301: Support surface 302: Bottom surface 31: Insulating layer 32: Support conductor 32A: First conductive part 32B: Second conductive part 321: First bonding layer 33: Back metal layer 41: 1st terminal 42: 2nd terminal 43: 3rd terminal 44: 4th terminal 45: Control terminal 451: Holder 452: Metal pin 453: Cylindrical part 453a: First outer surface 453b: First inner surface 454: First flange part 454a: First surface 454b: Second surface 455: Second flange part 459: Conductive bonding material 46A, 46B, 46C, 46D, 46E: First control terminal 47A, 47B, 47C, 47D: Second control terminal 48: Control terminal support (terminal support) 48A: First support part 48B: Second support part 481: Insulation layer 482: First metal layer 482A: First part 482B: Second part 482C: Third part 482D: Fourth part 482E: Fifth part 482F: Sixth part 483: Second metal layer 49: Bonding material 5: First conduction member 51: Main part 51 514: First opening 52: First joint part 53: Second joint part 59: Conductive bonding material [[ID=,30]]6: Second conduction member 602: First step part 603: Second step part 61: Third joint part 611: Flat part 612: First inclined part 64: First path part 641: First strip part 643: First extending part 649: Concave part 65: Second path part 651: Second strip part 653: Second extending part 659: Concave part 66: Third path part 669: Concave part 67: Fourth path part 69: Conductive bonding material 71, 72, 73, 74: Wire 8: Encapsulating resin 81: Main resin surface 810: First concave part 811: Inner surface of concave part 812: Bottom surface of concave part 813: Edge of concave part 814: Cylindrical inner surface 815: Tapered inner surface 82: Back surface of resin 831, 832: Side surfaces of resin 832a: Concave part 833, 834: Side surfaces of resin 851: Protrusion 851a: Protrusion end face 851b: Concave part 851c: Inner wall surface 852: First protrusion 852a: Top surface of protrusion 89: First resin filling part L1: First dimension L2: Second dimension (Explanation of symbols related to the second aspect) B1, B11, B12, B13, B14, B15: Semiconductor equipment 11: Support substrate 111: Insulating layer 112: Support conductor 1120: Main surface 1121: First conductive part 1122: Second conductive part 113: Metal layer on the back 13: Power terminals 14: 1st power terminal 15: 2nd power terminal 16: Third power terminal 21: Semiconductor element 21A: First element (first switching element) 21B: Second element (second switching element) 211: 1st electrode 212: 2nd electrode 213: Third electrode 214: Fourth electrode 22: Thermistor 23: Conductive bonding layer 31: First conductive member 310: Through hole 311: Main body 312: First joint 313: Second joint 32: Second conductive member 321: Main body 322: Third joint 324: Fourth joint 326: Middle part 327: Horizontal beam part 328: Drooping part 33: First conductive bonding layer 34: Second conductive bonding layer 35: Third conductive bonding layer 36: Fourth conductive bonding layer 41: First wire 42: Second wire 43: Third wire 44: Fourth wire 45: Control terminal (terminal) 451: Holder 452: Metal pin 453: Cylindrical part 454: 1st collar 454a: 1st side 455: Second flange 459: Conductive bonding layer 46A, 46B, 46C: First control terminal 47A, 47B, 47C, 47D: Second control terminal 48: Control terminal support (terminal support) 48A: First support part 48B: Second support part 481: Insulating layer 482: First metal layer 482A: 1st part 482B: 2nd part 482C: 3rd part 482D: 4th part 482E: 5th part 483: 2nd metal layer 49: Bonding layer 50: Sealing resin 51: Main resin surface 511: First recess 512: First recess inner surface 513: First edge 514: Second edge 515: Chamfered part 517: Second recess 518: Bottom surface of the second recess 52: Resin back 531, 532, 533, 534: Resin side 531a: recess 55: first resin part 91: Mold 911: Cylindrical pin 915: Rounded corners 919: Cavity space

Claims

1. A support substrate comprising a first insulating layer, a support conductor, and a back metal layer, wherein the support conductor has a main surface facing one side in the thickness direction, A plurality of semiconductor elements bonded to the main surface of the support conductor, A wiring board having a second insulating layer, a first metal layer, and a second metal layer stacked on top of each other, and positioned on one side in the thickness direction with respect to the main surface of the support conductor, A sealing resin having a resin main surface facing one side in the thickness direction and covering at least a portion of the support substrate and the wiring substrate, The sealing resin has at least one first recess that is recessed from the main surface of the resin to the other side in the thickness direction, The at least one first recess has an inner surface of the first recess having a first edge that contacts the wiring board, The first metal layer of the wiring board includes a plurality of wiring portions that are separated from and insulated from each other. The plurality of wiring sections are electrically connected to the plurality of semiconductor elements. A semiconductor device in which at least a portion of the plurality of wiring portions is arranged in the at least one first recess and is exposed from the sealing resin.

2. The semiconductor device according to claim 1, wherein the at least one first recess surrounds a plurality of exposed portions of the wiring portions that are spaced apart from each other.

3. The semiconductor device according to claim 1, wherein the at least one first recess overlaps the wiring substrate when viewed in the thickness direction.

4. The semiconductor device according to claim 1, wherein the inner surface of the first recess extends in the thickness direction and is inclined such that the inner diameter dimension decreases toward the other side in the thickness direction.

5. The inner surface of the first recess has a first edge located at the other end in the thickness direction and a second edge located at one end in the thickness direction. The semiconductor device according to claim 1, wherein the second edge surrounds the first edge when viewed in the thickness direction.

6. The semiconductor device according to claim 1, wherein the at least one first recess has a chamfered portion interposed between the resin main surface and the inner surface of the first recess.

7. The facility comprises a plurality of the first recesses, The semiconductor device according to claim 1, wherein the plurality of wiring portions are individually arranged corresponding to each of the plurality of first recesses.

8. The semiconductor device according to claim 1, wherein at least a portion of the plurality of wiring portions is electrically connected to the control electrodes of the plurality of semiconductor elements.

9. The support substrate includes a first conductive portion and a second conductive portion that are separated in a first direction perpendicular to the thickness direction, The plurality of semiconductor elements include a first switching element mounted on the first conductive portion and a second switching element mounted on the second conductive portion. The semiconductor device according to any one of claims 1 to 8, wherein the wiring board includes a first support portion disposed on the first conductive portion and a second support portion disposed on the second conductive portion.

10. The first switching element and the second switching element further comprise a first power terminal, a second power terminal, and a third power terminal electrically connected to the first switching element and the second switching element, The first power terminal and the second power terminal are located on one side in the first direction with respect to the first conductive portion and the second conductive portion. The semiconductor device according to claim 9, wherein the third power terminal is located on the other side in the first direction relative to the second conductive portion.

11. A support substrate comprising a first insulating layer, a support conductor, and a back metal layer, wherein the support conductor has a main surface facing one side in the thickness direction, A plurality of semiconductor elements bonded to the main surface of the support conductor, A wiring board having a second insulating layer, a first metal layer, and a second metal layer stacked on top of each other, and positioned on one side in the thickness direction with respect to the main surface of the support conductor, A method for manufacturing a semiconductor device, comprising: a sealing resin having a resin main surface facing one side in the thickness direction and covering at least a portion of the support substrate and the wiring substrate; The first metal layer of the wiring board includes a plurality of wiring portions that are separated from and insulated from each other. The process includes a step of forming a sealing resin that covers at least a portion of the support substrate and a portion of the wiring substrate by molding, A method for manufacturing a semiconductor device, comprising the step of forming the sealing resin, wherein, with no control terminals arranged on the wiring board, a mold is pressed against the wiring board to form the sealing resin having a first recess that exposes at least a portion of the wiring board.

12. In the process of forming the sealing resin, the resin main surface and the first recess, which is recessed from the resin main surface on the other side in the thickness direction and has a shape corresponding to the mold, are formed. The first recess includes an inner surface of the first recess extending in the thickness direction, The method for manufacturing a semiconductor device according to claim 11, wherein the inner surface of the first recess is inclined such that the inner diameter dimension decreases as it moves toward the other side in the thickness direction.

13. The method for manufacturing a semiconductor device according to claim 12, wherein in the step of forming the sealing resin, the first recess is molded such that it has a chamfered portion interposed between the main surface of the resin and the inner surface of the first recess.

14. The method for manufacturing a semiconductor device according to claim 13, wherein in the step of forming the sealing resin, each of the first recesses is molded so as to overlap the corresponding wiring portion when viewed in the thickness direction.

15. The method for manufacturing a semiconductor device according to any one of claims 11 to 13, wherein in the step of forming the sealing resin, the first recess is molded so as to overlap a part of the plurality of wiring portions when viewed in the thickness direction.

16. The method for manufacturing a semiconductor device according to claim 11, further comprising the step of forming a resist layer on the upper surface of the second insulating layer of the wiring substrate in a portion where the first metal layer is not formed, prior to the step of forming the sealing resin.

17. The method for manufacturing a semiconductor device according to claim 11, wherein the lower end of the mold is made of a cushioning material.

18. A method for manufacturing a semiconductor device according to claim 11, wherein, after the step of forming the sealing resin, the control terminal is arranged in the first recess on the wiring board.

19. The aforementioned multiple wiring sections are electrically connected to the aforementioned multiple semiconductor elements. The method for manufacturing a semiconductor device according to claim 11, wherein at least a portion of the plurality of wiring portions is arranged in the first recess and is exposed from the sealing resin.

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