semiconductor components
The semiconductor component with a thin ceramic insulating layer and bonded particles addresses heat dissipation challenges, achieving efficient heat conduction and miniaturization while maintaining mechanical strength.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- DENKA CO LTD
- Filing Date
- 2024-11-20
- Publication Date
- 2026-06-01
AI Technical Summary
Semiconductor devices face challenges in effectively dissipating heat generated by large current flow, necessitating improved heat dissipation capabilities.
A semiconductor component comprising a metal substrate with a thin insulating layer of ceramics, a circuit layer on the insulating layer, and a metal layer for forming circuits, where the insulating layer is less than 100 μm thick with a surface roughness of 1.5 μm or less, and the ceramic particles are bonded at their interfaces, enhancing thermal conductivity.
The solution provides a semiconductor device with excellent heat dissipation performance by efficiently conducting heat away from the semiconductor element, allowing for miniaturization and maintaining mechanical strength.
Smart Images
Figure 2026089293000001_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to components for semiconductors.
Background Art
[0002] In recent years, in fields such as power modules, a large current may flow through semiconductor elements. When a large current flows through a semiconductor element, the amount of heat generated by the semiconductor element also increases. Therefore, a semiconductor device including the semiconductor element is required to have excellent heat dissipation. For example, Patent Document 1 describes a semiconductor cooling device that cools a substrate on which a semiconductor element is mounted.
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] An example of the problem to be solved by the present invention is to provide a semiconductor device having excellent heat dissipation.
Means for Solving the Problems
[0005] According to the present invention, the following components for semiconductors are provided. [1] A component for a semiconductor for mounting a semiconductor element, a base material containing a metal, an insulating layer joined to one surface of the base material, and the insulating layer has a thickness of less than 100 μm, contains ceramics, and a circuit layer is formed on the surface of the insulating layer opposite to the base material. A component for a semiconductor. [2] The ceramics include at least one of aluminum nitride, silicon nitride, boron nitride, aluminum oxynitride, and aluminum oxide. [1] Semiconductor components as described above. [3] The thickness of the insulating layer is 15 μm or more. Semiconductor components as described in [1] or [2]. [4] The insulating layer has a surface roughness Ra of 1.5 μm or less on the side opposite to the substrate. A semiconductor component as described in any of [1] to [3]. [5] When the thickness of the insulating layer is D, Ra / D is 0.1 or less. [4] Semiconductor components as described above. [6] The insulating layer has a structure in which a plurality of ceramic-containing particles are deposited, and adjacent ceramic-containing particles are bonded to each other at least a portion of the interface. A semiconductor component as described in any of [1] to [5]. [7] In cross-section, the insulating layer has an area of 0.02 μm per ceramic-containing particle. 2 More than 0.2μm 2 The following is: [6] Semiconductor components as described above. [8] The insulating layer is formed by the Aerosol Deposition method or the thermal spraying method. A semiconductor component as described in any of [1] to [7]. [9] The circuit layer comprises a metal layer for forming the circuit layer, A semiconductor component as described in any of [1] to [8].
[10] The aforementioned metal layer contains copper. [9] Semiconductor components as described above.
[11] The aforementioned metal layer is rolled copper.
[10] Semiconductor components as described above.
[12] The metal layer has a structure in which a plurality of copper-containing particles are deposited, and adjacent copper-containing particles are bonded to each other at at least a part of the interface. The semiconductor component according to any one of [1] to
[11] .
[13] The base material is a heat dissipation member. The semiconductor component according to any one of [1] to
[12] .
[14] The base material is a base plate. The semiconductor component according to any one of [1] to
[12] .
Advantages of the Invention
[0006] According to the present invention, a semiconductor device with excellent heat dissipation performance is provided.
Brief Description of the Drawings
[0007] [Figure 1] It is a schematic diagram of a semiconductor component according to the first embodiment. [Figure 2] It is a schematic diagram of a semiconductor component according to the first embodiment including a circuit layer. [Figure 3] It is a diagram showing a manufacturing method of a semiconductor component according to the first embodiment. [Figure 4] It is a schematic diagram of a semiconductor device according to the first embodiment. [Figure 5] It is a schematic diagram of a semiconductor component according to the second embodiment.
Modes for Carrying Out the Invention
[0008] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same components are denoted by the same reference numerals, and the description will be omitted as appropriate. Also, the drawings are schematic and do not match the actual dimensional ratios.
[0009] [First Embodiment] Figure 1 is a schematic diagram of a semiconductor component 10 according to this embodiment. The semiconductor component 10 according to this embodiment is a semiconductor component for mounting a semiconductor element, and as shown in Figure 1, comprises a metal-containing substrate 100 and an insulating layer 200 bonded to one surface of the substrate 100. Here, the insulating layer 200 is in direct contact with the substrate 100, and no other layers are interposed between them. Furthermore, a circuit layer, which will be described later, is formed on the surface of the insulating layer 200 opposite to the substrate 100.
[0010] Figure 2 shows a semiconductor component 10 in which a circuit layer 300 is formed on an insulating layer 200. A semiconductor device can be manufactured by mounting a semiconductor element on the circuit layer 300 of the semiconductor component 10. In the semiconductor device manufactured in this way, the heat generated by the semiconductor element is conducted to the substrate 100 via the circuit layer 300 and the insulating layer 200, and the heat can be dissipated from the substrate 100 to the outside. Because the insulating layer 200 of the semiconductor component 10 according to this embodiment is thin, the efficiency of the heat conduction is good, and a semiconductor device with excellent heat dissipation can be realized. Details of the semiconductor device will be described later.
[0011] The details of each component of the semiconductor component 10 according to this embodiment will be described below.
[0012] [Base material 100] An insulating layer 200 is formed on the substrate 100. A circuit layer 300 is formed on the side of the insulating layer 200 opposite to the substrate 100, and a semiconductor element is mounted on the circuit layer 300 to manufacture a semiconductor device. The substrate 100 supports the insulating layer 200, the circuit layer 300, and the semiconductor element.
[0013] The base material 100 preferably contains a metal from the viewpoint of mechanical strength and thermal conductivity. As the metal, for example, copper, aluminum, or alloys containing these can be used.
[0014] As an example of the substrate 100, a general-purpose base plate used for semiconductor device manufacturing can be used.
[0015] Furthermore, the base material 100 may include a heat dissipation member with an uneven structure. When a heat dissipation member is included, the heat dissipation performance of the semiconductor component 10 and the semiconductor device can be improved. For example, the base material 100 may be a heat sink integrated with the heat dissipation member, or it may be a component such as a base plate with heat dissipation fins or other components attached externally.
[0016] Furthermore, if the base material 100 is the base plate described above, the thickness T1 of the base material 100 is preferably 0.15 mm or more, more preferably 0.25 mm or more, and even more preferably 0.3 mm or more. By having a thickness T1 greater than or equal to the lower limit, the base material 100 can obtain sufficient mechanical strength. Furthermore, if the base material 100 is the base plate described above, the thickness T1 of the base material 100 is preferably 3 mm or less, more preferably 2.5 mm or less, and even more preferably 2 mm or less. By having a thickness T1 less than or equal to the upper limit, the semiconductor component 10 can be miniaturized. Furthermore, if the base material 100 is the heat sink described above, the thickness T1 of the base material 100 is preferably 0.5 mm or more, more preferably 0.8 mm or more, and even more preferably 1 mm or more. By having a thickness T1 greater than or equal to the lower limit, the base material 100 can obtain sufficient mechanical strength. Furthermore, if the base material 100 is the heat sink described above, the thickness T1 of the base material 100 is preferably 5 mm or less, more preferably 4 mm or less, and even more preferably 3 mm or less. By keeping the thickness T1 below the above upper limit, the semiconductor component 10 can be miniaturized.
[0017] [Insulating layer 200] The insulating layer 200 is bonded to one surface of the substrate 100. The circuit layer 300 is formed on the surface opposite to the substrate 100. The insulating layer 200 electrically insulates the substrate 100 from the circuit layer 300. It also transfers heat generated by the semiconductor element to the substrate 100.
[0018] The insulating layer 200 preferably contains ceramics from the viewpoint of thermal conductivity and insulation. For example, it is preferable to contain 95 parts by mass or more and 100 parts by mass of ceramics per 100 parts by mass of the entire insulating layer 200. The ceramics include, for example, at least one of aluminum nitride, silicon nitride such as Si3N4, boron nitride, aluminum oxynitride, and aluminum oxide.
[0019] Furthermore, the thickness T2 of the insulating layer 200 is preferably less than 100 μm, more preferably 50 μm or less, and even more preferably 40 μm or less. By having a thickness T2 below the above upper limit, the thermal conductivity of the insulating layer 200 from the circuit layer 300 to the substrate 100 is improved. Also, the thickness T2 is preferably, for example, 15 μm or more, more preferably 18 μm or more, and even more preferably 20 μm or more. By having a thickness T2 above the above lower limit, the insulating layer 200 can obtain sufficient insulating properties.
[0020] Preferably, the surface roughness Ra of the insulating layer 200 on the side opposite to the substrate 100 is 1.5 μm or less. The effects of having a surface roughness Ra below the above upper limit will be described later. Furthermore, it is preferable that the ratio of surface roughness Ra to the thickness T2 of the insulating layer 200, Ra / T2, is 0.1 or less. By having the surface roughness Ra and Ra / T2 of the side of the insulating layer 200 opposite to the substrate 100 within the above range, it becomes easier to form a metal layer such as the circuit layer 300, which will be described later, on the side of the insulating layer 200 opposite to the substrate 100 by sputtering.
[0021] The method for forming the insulating layer 200 is, for example, the Aerosol Deposition method (hereinafter referred to as the AD method) or the thermal spraying method, but is not limited thereto. As a method for forming the insulating layer 200, the AD method is preferred from the viewpoint of achieving the thickness T2 and surface roughness Ra of the insulating layer 200 as described above. When the insulating layer 200 is formed by the above method, the insulating layer 200 is deposited directly onto the substrate 100.
[0022] When the insulating layer 200 is formed by the AD method, the average particle size D50 of the sprayed powder material is, for example, 0.05 μm to 10 μm. The average particle size D50 is the particle size at which the cumulative frequency reaches 50% in the volume-based cumulative frequency distribution curve measured using a laser diffraction particle size distribution analyzer. Furthermore, when the insulating layer 200 is formed by the AD method, it has a structure in which multiple ceramic-containing particles are deposited, and adjacent ceramic-containing particles may be bonded to each other at least a portion of the interface. Also, in cross-section, the area per ceramic-containing particle of the insulating layer 200 is, for example, 0.02 μm. 2 More than 0.2μm 2 The following applies.
[0023] [Circuit layer 300] The circuit layer 300 has semiconductor elements mounted on one surface. The circuit layer 300 becomes part of the circuit including the semiconductor elements and also supports the semiconductor elements. It also conducts heat generated by the semiconductor elements to the insulating layer 200 and the substrate 100.
[0024] The circuit layer 300 preferably contains a metal from the viewpoint of electrical conductivity and thermal conductivity. As the metal, for example, copper, aluminum, or alloys containing these can be used.
[0025] Furthermore, the thickness T3 of the circuit layer 300 is preferably, for example, 1 μm or less, more preferably 0.9 μm or less, and even more preferably 0.8 μm or less. By keeping the thickness T3 below the upper limit, the overall thickness of the semiconductor component 10 can be reduced. Also, the thickness T3 is preferably, for example, 0.1 μm or more, more preferably 0.15 μm or more, and even more preferably 0.2 μm or more. By keeping the thickness T2 above the lower limit, the circuit layer 300 can obtain sufficient conductivity.
[0026] The circuit layer 300 can be formed, for example, by depositing a metal layer on the insulating layer 200 using electrolytic copper plating or sputtering, or by applying an ink containing metal particles to the insulating layer 200 using an inkjet method or a printing method using a mask, and then sintering the metal particles in the ink. When the circuit layer 300 is formed by the above methods, the circuit layer 300 is deposited directly on the insulating layer 200.
[0027] When a circuit layer 300 is formed by sintering metal particles, the circuit layer 300 has a structure in which multiple metal particles (for example, copper-containing particles) are deposited, and adjacent metal particles are bonded to each other at least a portion of their interface.
[0028] [Manufacturing method for semiconductor component 10] Next, a method for manufacturing the semiconductor component 10 will be described. Figure 3 is a cross-sectional view showing an example of a method for manufacturing the semiconductor component 10 according to this embodiment. First, a first step (step S110) is performed to prepare the substrate 100. As an example, a base plate for general semiconductor device manufacturing is prepared.
[0029] Next, a second step (step S120) is performed to form an insulating layer 200 on one surface of the substrate 100. In the second step, for example, the insulating layer 200 is formed by depositing ceramic material by the AD method or the thermal spraying method. The semiconductor component 10 shown in Figure 1 can be manufactured by the first and second steps.
[0030] Furthermore, a third step (step S130) may be performed to form a circuit layer 300 on the insulating layer 200. Methods for forming the circuit layer 300 include depositing a metal layer on the insulating layer 200 by electrolytic copper plating or sputtering, and then shaping the metal layer into an arbitrary shape by etching or the like, or joining rolled copper, which has been processed from a metal plate by press working or the like, onto the insulating layer 200. A specific method for joining rolled copper onto the insulating layer 200 is, for example, joining with an adhesive containing a thermosetting resin. By further performing the third step, the semiconductor component 10 shown in Figure 2 can be manufactured.
[0031] [Semiconductor device 20] Next, a semiconductor device 20 using the semiconductor component 10 according to this embodiment will be described. Figure 4 is a schematic diagram of the semiconductor device 20. The semiconductor element 400 is provided on the side of the insulating layer 200 opposite to the substrate 100 and is bonded to the terminal region of the circuit layer 300. For example, the semiconductor element 400 is bonded to the circuit layer 300 by fixing it with a conductive die bond adhesive containing a thermosetting resin and metal particles. In this case, a conductive layer 1 is formed between the circuit layer 300 and the semiconductor element 400. The semiconductor element 400 is also electrically connected to other parts of the circuit layer 300, for example, by wire 2. The semiconductor device 20 is also connected to an external power supply by wire 3.
[0032] Furthermore, the semiconductor device 20 is covered by a cover portion 500, at least in the portion including the semiconductor element 400. Preferably, the inside of the cover portion 500 is sealed with a sealing material. The sealing material includes, for example, a thermosetting resin.
[0033] [Manufacturing method for semiconductor device 20] Next, a method for manufacturing the semiconductor device 20 will be described. As an example, the method for manufacturing the semiconductor device 20 according to this embodiment includes the steps of mounting a semiconductor element 400 on a circuit layer 300 of a semiconductor component 10, electrically connecting the semiconductor element 400 and the circuit layer 300 by wire bonding or the like, and covering the semiconductor element with a cover portion 500 and sealing it with a sealing material.
[0034] As described above, by using the semiconductor component 10 according to this embodiment, a semiconductor device 20 having a thin insulating layer 200 can be obtained. Furthermore, because the insulating layer 200 of the semiconductor device 20 according to this embodiment is thin, the heat generated by the semiconductor element 400 can be efficiently conducted to the substrate 100, thus providing excellent heat dissipation.
[0035] [Second Embodiment] Next, a semiconductor component 10 according to the second embodiment will be described. This embodiment is the same as the other embodiments, except as described below.
[0036] Figure 5 is a schematic diagram of the semiconductor component 10 according to this embodiment. The semiconductor component 10 according to this embodiment has a metal layer 310 on an insulating layer 200.
[0037] Furthermore, in the semiconductor component 10 according to this embodiment, any circuit layer 300 can be formed by processing the metal layer 310, for example, by etching. The thickness of the metal layer 310 is, for example, 0.1 μm or more and 1 μm or less.
[0038] The metal layer 310 preferably contains a metal from the viewpoint of electrical conductivity and thermal conductivity. As the metal, for example, copper, aluminum, or alloys containing these can be used.
[0039] The metal layer 310 is formed, for example, by depositing metal on the insulating layer 200 by electrolytic copper plating or sputtering, or by applying an ink containing metal particles onto the insulating layer 200 using an inkjet method or printing method, and then sintering the metal particles in the ink. When the metal layer 310 is formed by the above methods, the metal layer 310 is deposited directly onto the insulating layer 200.
[0040] When a metal layer 310 is formed by sintering metal particles, the metal layer 310 has a structure in which multiple metal particles (for example, copper-containing particles) are deposited, and adjacent metal particles are bonded to each other at least a portion of their interface.
[0041] Furthermore, the metal layer 310 may be a seed layer for depositing metal by electrolytic copper plating. The seed layer can be formed, for example, by sputtering. If the metal layer 310 is a seed layer, any circuit layer 300 can be formed by depositing metal on the metal layer 310 by electrolytic copper plating and then processing it with an etching treatment or the like.
[0042] Furthermore, the metal layer 310 may be formed by bonding rolled copper, processed by press working or the like, onto the insulating layer 200. Specific methods for bonding the rolled copper onto the insulating layer 200 include, for example, bonding with an adhesive containing a thermosetting resin.
[0043] As described above, a semiconductor device 20 with excellent heat dissipation can be realized using the semiconductor component 10 according to this embodiment. Furthermore, any circuit layer 300 can be formed in the semiconductor component 10 according to this embodiment by processing the metal layer 310.
[0044] Although embodiments of the present invention have been described above, these are merely examples, and various other configurations can be adopted. Furthermore, the present invention is not limited to the embodiments described above, and modifications, improvements, etc., within the scope of achieving the objectives of the present invention are included. [Explanation of symbols]
[0045] 10 Semiconductor components 20 Semiconductor equipment 100 Base material 200 Insulating layer 300 circuit layers 310 metal layer 400 semiconductor elements 500 Cover section
Claims
1. A semiconductor component for mounting semiconductor devices, A base material containing metal, An insulating layer bonded to one surface of the substrate, Equipped with, The insulating layer has a thickness of less than 100 μm and contains ceramics. A semiconductor component in which a circuit layer is formed on the surface of the insulating layer opposite to the substrate.
2. The ceramics include at least one of aluminum nitride, silicon nitride, boron nitride, aluminum oxynitride, and aluminum oxide. The semiconductor component according to claim 1.
3. The thickness of the insulating layer is 15 μm or more. A semiconductor component according to claim 1 or 2.
4. The insulating layer has a surface roughness Ra of 1.5 μm or less on the side opposite to the substrate. A semiconductor component according to claim 1 or 2.
5. When the thickness of the insulating layer is D, Ra / D is 0.1 or less. The semiconductor component according to claim 4.
6. The insulating layer has a structure in which a plurality of ceramic-containing particles are deposited, and adjacent ceramic-containing particles are bonded to each other at least a portion of the interface. A semiconductor component according to claim 1 or 2.
7. In cross-section, the insulating layer has an area of 0.02 μm per ceramic-containing particle. ２ 0.2 μm or more ２ The following is: The semiconductor component according to claim 6.
8. The insulating layer is formed by the Aerosol Deposition method or by thermal spraying. A semiconductor component according to claim 1 or 2.
9. The circuit layer comprises a metal layer for forming the circuit layer, A semiconductor component according to claim 1 or 2.
10. The aforementioned metal layer contains copper. The semiconductor component according to claim 9.
11. The aforementioned metal layer is rolled copper. The semiconductor component according to claim 10.
12. The metal layer has a structure in which multiple copper-containing particles are deposited, and adjacent copper-containing particles are bonded to each other at least a portion of the interface. The semiconductor component according to claim 1 or 2.
13. The aforementioned substrate is a heat dissipation member. A semiconductor component according to claim 1 or 2.
14. The substrate is a base plate. A semiconductor component according to claim 1 or 2.