Bond head unit, die bonding apparatus, die bonding method, and method for manufacturing semiconductor device

Abstract

The objective is to provide a technology that can stabilize the load applied to the die. [Solution] The bond head unit comprises a bond head, a load cell mounted on the bond head and on the central axis of the bond head, and a cylinder mounted on the load cell and on the central axis of the load cell.

Description

Technical Field

[0001] The present disclosure relates to a die bonding apparatus and is applicable, for example, to a bond head having a load cell.

Background Art

[0002] As one step in the manufacturing process of a semiconductor device, in a die bonder, a die picked up by a bond head is bonded to a substrate. The bond head is lowered to land the die on the substrate, and then the bond head is further pushed in to apply a load to the die to bond the die to the substrate (for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the present disclosure is to provide a technique capable of stabilizing the load received by a die. Other problems and novel features will become apparent from the description of this specification and the accompanying drawings.

Means for Solving the Problems

[0005] The outline of a typical aspect of the present disclosure is as follows. The bond head unit has a bond head, a load cell provided on the central axis of the bond head and above the bond head, and a cylinder provided on the central axis of the load cell and above the load cell.

Effects of the Invention

[0006] According to the present disclosure, it is possible to stabilize the load received by a die. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a diagram illustrating the configuration of a die bonding apparatus. [Figure 2] Figure 2 is a diagram illustrating the configuration of a die bonding apparatus. [Figure 3] Figure 3 is a diagram illustrating a method for manufacturing a semiconductor device. [Figure 4] Figure 4 is a diagram illustrating the configuration of the bond head unit. [Figure 5] Figure 5 illustrates the evaluation results when a load cell is mounted on a bond head unit. [Figure 6] Figure 6 illustrates the evaluation results when a load cell is mounted on a bond head unit. [Modes for carrying out the invention]

[0008] The embodiments will be described below with reference to the drawings. However, for the sake of clarity, the following descriptions and drawings have been omitted and simplified as appropriate. Also, the same reference numerals are used for the same components, and repeated explanations may be omitted. Furthermore, in order to make the explanation clearer, the width, thickness, shape, etc. of each part may be represented schematically in the drawings, compared to the actual embodiment. In addition, the dimensional relationships of each element and the ratios of each element do not necessarily match between multiple drawings.

[0009] [Configuration of the die bonding apparatus] Figure 1 is a schematic top view showing an example of the configuration of a die bonder, which is an example of a die bonding apparatus. Figure 2 is a diagram illustrating the schematic configuration as seen from the direction of arrow A in Figure 1.

[0010] As shown in Figures 1 and 2, the die bonder 1 broadly comprises a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate output unit 70, and a control unit 80. The Y2-Y1 direction (Y direction) is the front-to-back direction of the die bonder 1, the X2-X1 direction (X direction) is the left-to-right direction, and the Z1-Z2 direction (Z direction) is the up-and-down direction. The wafer supply unit 10 is located on the front side of the die bonder 1, and the bonding unit 40 is located on the rear side. Here, the X, Y, and Z directions are orthogonal to each other.

[0011] As shown in Figure 1, the wafer supply unit 10 includes a wafer cassette lifter 11, a wafer holding base 12, and a peeling unit 13.

[0012] The wafer cassette lifter 11 moves a wafer cassette (not shown) containing multiple wafer ring WRs up and down to the wafer transport height. The wafer correction chute (not shown) aligns the wafer ring WRs supplied from the wafer cassette lifter 11. The wafer extractor (not shown) removes wafer ring WRs from the wafer cassette and supplies them to the wafer holder 12, or removes them from the wafer holder 12 and stores them in the wafer cassette.

[0013] A wafer W is attached to a dicing tape DT, and the wafer W is divided into multiple dies D. The dicing tape DT is held in a wafer ring WR. The wafer W is, for example, a semiconductor wafer, and the dies D are semiconductor chips. A film-like adhesive material called a die attach film (DAF) is attached between the wafer W and the dicing tape DT. The adhesive material hardens when heated.

[0014] The wafer holder 12 moves in the X and Y directions. This moves the wafer ring WR so that the die D to be picked up is in a predetermined position on the peeling unit 13. The wafer holder 12 also rotates the wafer ring WR in the XY plane. The peeling unit 13 moves in the vertical direction. The peeling unit 13 peels the die D from the dicing tape DT.

[0015] As shown in Figures 1 and 2, the pickup unit 20 includes a pickup head 21, a pickup head table 23, and a wafer recognition camera 24. The pickup head 21 is provided with a collet 22 that adsorbs and holds the peeled die D at its tip. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The pickup head table 23 moves the pickup head 21 in the Y direction. The pickup head table 23 is provided with drive units (not shown) that raise, lower, rotate, and move the pickup head 21 in the X direction. The wafer recognition camera 24 recognizes the pickup position of the die D to be picked up from the wafer W and performs visual inspection of the die D.

[0016] As shown in Figures 1 and 2, the intermediate stage section 30 includes an intermediate stage 31 on which the die D is placed, and a stage recognition camera 34 for photographing and recognizing the die D on the intermediate stage 31. The intermediate stage 31 is equipped with suction holes for adsorbing the placed die D. The placed die D is temporarily held on the intermediate stage 31. The intermediate stage 31 is both a placement stage on which the die D is placed and a pickup stage on which the die D is picked up.

[0017] As shown in FIGS. 1 and 2, the bonding unit 40 includes a bond head unit 41, a bond head table 43, a substrate recognition camera 44, and a bond stage 46. A collet portion 42 for sucking and holding the die D at its tip is provided in the bond head unit 41. The bond head table 43 moves the bond head unit 41 in the Y direction. Each drive unit (not shown) for moving the bond head unit 41 up and down, rotating it, and moving it in the X direction is provided on the bond head table 43. The substrate recognition camera 44 photographs the substrate S and recognizes the bonding position. The bond stage 46 is raised when the die D is placed on the substrate S and supports the substrate S from below. The bond stage 46 has a suction port (not shown) for vacuum-sucking the substrate S and can fix the substrate S. The bond stage 46 has a heating unit (not shown) for heating the substrate S.

[0018] Here, the substrate S includes, for example, a wiring board, a lead frame, a glass substrate, etc. A plurality of product areas are formed on the substrate S. The product area finally becomes one package. The product area is hereinafter referred to as a package area P. Further, a position recognition mark (not shown) of the package area P is formed on the substrate S.

[0019] With such a configuration, the bond head unit 41 corrects the pickup position and orientation based on the photographed data of the stage recognition camera 34 and picks up the die D from the intermediate stage 31. Then, the bond head unit 41 bonds onto the package area P of the substrate S based on the photographed data of the substrate recognition camera 44, or bonds in a form of laminating on the die that has already been bonded on the package area P of the substrate S.

[0020] As shown in FIG. 1, the conveying unit 50 includes a conveying claw 51 that grips and conveys the substrate S, and a conveying lane 52 along which the substrate S moves. The substrate S is moved in the X1 direction, for example, by driving a nut (not shown) of the conveying claw 51 provided in the conveying lane 52 with a ball screw (not shown) provided along the conveying lane 52. With such a configuration, the substrate S moves from the substrate supply unit 60 along the conveying lane 52 to the bonding position, and after the die D is bonded, it moves to the substrate discharge unit 70 and is delivered to the substrate discharge unit 70.

[0021] The substrate supply unit 60 takes out the substrate S stored in a conveying jig (not shown) and supplies it to the conveying unit 50. The substrate discharge unit 70 stores the substrate S conveyed by the conveying unit 50 in a conveying jig.

[0022] As shown in FIG. 1, the control unit 80 is configured as a computer having a CPU (Central Processing Unit) 81, a storage device 82, and an input / output device 83. The control unit 80 is also referred to as a control device or a controller. The storage device 82 includes a main storage device 82a and an auxiliary storage device 82b. The main storage device 82a is composed of a RAM (Random Access Memory) that stores processing programs and the like. The auxiliary storage device 82b is composed of an HDD (Hard Disk Drive), an SSD (Solid State Drive), or the like that stores control data, image data, and the like necessary for control. The processing program is a process recipe in which processing procedures, conditions, and the like are described.

[0023] The input / output device 83 includes an image acquisition device 83a, a motor control device 83b, and an I / O signal control device 83c. The image acquisition device 83a acquires image data from an optical system such as a substrate recognition camera 44. The motor control device 83b controls the drive units of the wafer supply unit 10, such as the XY table (not shown), the pickup head table 23, and the bond head table 43. The I / O signal control device 83c acquires signals from various sensors and outputs electrical signals to control devices (for example, regulators and solenoid valves described later).

[0024] [Die bonding method] Figure 3 is a flowchart illustrating a method for manufacturing a semiconductor device using the die bonder shown in Figure 1.

[0025] As shown in Figure 3, a die bonding method (method of manufacturing a semiconductor device), which is one step in the manufacturing process of a semiconductor device, is performed using a die bonder 1. In the following description, the control unit 80 controls the operation of each part that makes up the die bonder 1.

[0026] (Wafer loading: Process S1) A wafer cassette (not shown) containing wafer ring WRs is loaded into the wafer cassette lifter 11. The wafer ring WRs are removed from the wafer cassette filled with wafer ring WRs and supplied (transported) to the wafer holder 12.

[0027] (Substrate loading: Process S2) A transport jig (not shown) containing the substrate S is fed into the substrate supply unit 60. In the substrate supply unit 60, the substrate S stored in the transport jig is removed from the transport jig. Then, the substrate S is supplied (transported) to the bonding unit 40 via the transport unit 50.

[0028] (Pickup: Process S3) After step S1, the wafer holder 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 24 and image data is acquired. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder 1 is calculated. The die position reference point is a predetermined position of the wafer holder 12 that is held as the initial setting of the device. By processing the image data, a visual inspection of the die D is performed.

[0029] The die D is peeled off from the dicing tape DT by the peeling unit 13 and the pickup head 21. The die D, peeled off from the dicing tape DT, is attracted and held by a collet 22 provided on the pickup head 21, and is transported to and placed on the intermediate stage 31.

[0030] The die D on the intermediate stage 31 is photographed by the stage recognition camera 34, and image data is acquired. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder 1 is calculated. The die position reference point is a predetermined position on the intermediate stage 31, which is stored as the initial setting of the device. Visual inspection of the die D is performed by processing the image data.

[0031] The pickup head 21, which has transported die D to the intermediate stage 31, is returned to the wafer supply unit 10. Following the procedure described above, the next die D is peeled off from the dicing tape DT, and thereafter, die D is peeled off one by one from the dicing tape DT following the same procedure.

[0032] (Bonding: Process S4) The transport unit 50 transports the substrate S to the bond stage 46. The substrate S placed on the bond stage 46 is photographed by the substrate recognition camera 44, and image data is acquired. By processing the image data, the amount of displacement of the substrate S from the substrate position reference point of the die bonder 1 (in the X, Y, and θ directions) is calculated. The substrate position reference point is a predetermined position of the bonding unit 40, which is held as the initial setting of the device. By processing the image data, the appearance of the substrate S is inspected.

[0033] In step S3, the suction position of the bond head unit 41 is corrected based on the amount of displacement of the die D on the intermediate stage 31 calculated, and the die D is picked up by the collet part 42. The bond head unit 41, which has picked up the die D from the intermediate stage 31, bonds the die D to a predetermined location on the substrate S supported by the bond stage 46. Here, the predetermined location on the substrate S is the package area P of the substrate S, or the area where the die D is already placed and the die D is to be bonded in addition to it, or the bond area of ​​the die D to be laminated bonded. The die D bonded to the substrate S is photographed by the substrate recognition camera 44 and image data is acquired. By image processing the image data, an inspection is performed to check whether the die D is bonded to the desired position (relative position inspection of the die D and the substrate S) and an appearance inspection is performed.

[0034] The bond head unit 41, having bonded die D to the substrate S, is returned to the intermediate stage 31. Following the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This process is repeated until die D is bonded to all package areas P on the substrate S.

[0035] (Substrate unloading: Process S5) The transport unit 50 transports the substrate S to which the die D has been bonded from the bonding unit 40 to the substrate unloading unit 70. In the substrate unloading unit 70, the substrate S is removed and stored in the transport jig. The transport jig containing the substrate S is unloaded from the die bonder 1.

[0036] As described above, die D is mounted on substrate S and discharged from die bonder 1. Subsequently, for example, the transport jig containing substrate S with die D mounted on it is transported to the wire bonding process, where the electrodes of die D are electrically connected to the electrodes of substrate S via Au wire or the like. Then, substrate S is transported to the molding process, where die D and Au wire are sealed with molding resin (not shown), thereby completing the semiconductor package.

[0037] [Bond head unit configuration] Figure 4 is a schematic diagram showing the configuration of the bond head unit and its surroundings.

[0038] As shown in Figure 4, the bond head unit 41 is connected to the Z drive unit 47 mounted on the bond head table 43. The bond head unit 41 is provided with a collet section 42 having a collet made of an elastic material such as rubber at its tip and a collet holder for attaching the collet (see Figure 2).

[0039] As shown in Figure 4, the bond head unit 41 includes a bond head 411, a shaft 412, a support portion 413, a housing portion 414, a first fixing portion 415, a second fixing portion 416, a spring 417, a cylinder 418, and a load cell 419. Furthermore, the bond head unit 41 may also have a displacement meter 421. The central axis of the rod 418a of the cylinder 418, the load point of the load cell 419, the central axis of the bond head 411, and the central axis of the shaft 412 are coaxially located.

[0040] The Z drive unit 47 includes a lifting unit 471, a nut 472 connected to the lifting unit 471, a screw shaft 473 screwed into the nut 472, and a motor 474 having a rotating shaft connected to the screw shaft 473. The lifting unit 471 is mounted on a frame (not shown) so as to be able to move up and down. The motor 474 is disposed on top of the frame. The lifting unit 471 moves up and down as the motor 474 rotates in forward and reverse directions.

[0041] The bond head 411 is mounted inside the housing 414 so as to be able to move up and down. A load cell 419 is mounted in the center of the top surface of the bond head 411. A shaft 412 is connected to the center of the bottom of the bond head 411.

[0042] The shaft 412 extends downward from the bond head 411, passing through the floor of the housing 414 and the second fixing part 416, and down to below the second fixing part 416. The shaft 412 is tubular, with its upper part connected to the bond head 411 and its lower part connected to the collet part 42. The central part of the shaft 412 is guided by the support part 413.

[0043] The support portion 413 is fitted to the inner surface of the housing portion 414 so as to be able to move up and down. A spring 417 is provided between the upper surface of the support portion 413 and the bottom surface of the first fixing portion 415, with one end of the spring 417 fixed to the support portion 413 and the other end of the spring 417 fixed to the first fixing portion 415.

[0044] The outer surface of the housing 414 is fixed to the side of the lifting section 471. The cylinder 418 is fixed to the lower ceiling surface and the inner surface of the housing 414. The first fixing part 415 is fixed to the inner surface of the housing 414. The second fixing part 416 is fixed to the lower floor surface of the housing 414. The bottom surface of the first fixing part 415 has a recess, and a load cell 419 is fitted into the recess so as to be able to move up and down.

[0045] The collet section 42 is in communication with the vacuum suction system via the shaft 412 and the bond head 411.

[0046] The cylinder 418 is, for example, an air bearing cylinder. An air bearing cylinder is an air cylinder that uses an air bearing in the rod guide section. By using an air bearing, disturbances such as sliding resistance and moment can be reduced when a load is applied. The rod 418a of the cylinder 418 is in contact with the upper surface of the load cell 419.

[0047] The load cell 419 is also called a load transducer. The load point (load button) of the load cell 419 is in contact with the lower surface of the rod 418a of the cylinder 418. The pressing force of the cylinder 418 acts on the load point of the load cell 419. The load signal (LD) detected by the load cell 419 is sent to the control unit 80, and the control unit 80 controls the regulators 425a and 425b, which will be described later, based on this load signal (LD).

[0048] A collet portion 42 is attached to the lower end of the shaft 412. The collet portion 42 holds the die D and presses against the substrate S with a predetermined load, thereby pressing it against the substrate S.

[0049] The displacement sensor 421 consists of, for example, a displacement sensor 421a provided on the side of the bond head 411 and a displacement sensor 421b provided on the inner surface of the housing 414. The displacement sensor 421 is, for example, a magnetic displacement sensor. The displacement signal (DS) detected by the displacement sensor 421 is sent to the control unit 80, and the control unit 80 controls the regulators 425a and 425b, which will be described later, based on this displacement signal (DS).

[0050] [Functions of the pressing section and load detection section] As shown in Figure 4, the cylinder 418, which acts as a pressing unit, is connected to regulators 425a and 425b via piping 422, a solenoid valve 423, and piping 424a and 424b. The cylinder 418 is supplied with a predetermined air pressure from an air source (not shown) and regulators 425a and 425b, and the cylinder 418 presses the load cell 419, which acts as a load detection unit, downward with a predetermined pressing force (F). Regulators 425a and 425b are composed of, for example, electro-pneumatic regulators. Electro-pneumatic regulators are classified as proportional control valves and are devices that continuously control air pressure proportional to an input, which is an electrical signal. Regulator 425b, for example, supplies a pressure lower than the pressure supplied by regulator 425a. Regulator 425b is also called a low-pressure regulator.

[0051] In the bond head unit 41, the bond load is controlled by combining the cylinder 418 and regulators 425a and 425b. The regulators 425a and 425b each supply a predetermined pressure to the cylinder 418, controlling the applied load, and the bond operation is repeated by controlling the position from a certain reference height. Since the response time of the regulators 425a and 425b is long compared to the bond operation time, the load is switched between two regulators 425a and 425b, one for high load during bonding and the other for low load during pickup, using the solenoid valve 423. High pressure is supplied to the cylinder 418 when the load is high, and low pressure is supplied to the cylinder 418 when the load is low. When the pressure is switched from high to low, air is exhausted from the cylinder 418. When air is exhausted from the cylinder 418, the pressure from the load cell 419 disappears, and the bond head 411 rises due to the spring 417.

[0052] Furthermore, if feedback control is not performed during pickup, the solenoid valve 423, piping 424b, and regulator 425b may not be provided.

[0053] [Operation of the Bond Head Unit] The control unit 80 gradually lowers the bond head unit 41 using the Z drive unit 47 to place the die D on the substrate S. The control unit 80 then applies a load to the die D by pushing down the bond head 411 with the cylinder 418. Furthermore, it controls the pressing force of the cylinder 418 on the bond head 411 based on the bond load detected by the load cell 419.

[0054] The control unit 80 measures the actual load during bonding (loading) using the load cell 419. Based on the measured bonding load, the control unit 80 adjusts the pressure of regulators 425a and 425b using electrical signals. In other words, the control unit 80 provides feedback control of the bonding load based on the output from the load cell 419. The control unit 80 manages the amount of indentation (minute stroke) of the bonding head 411.

[0055] The control unit 80 may manage the amount of indentation (minute stroke) of the bond head 411 using the displacement meter 421. The control unit 80 may also display the bond load F in load equivalent form using a pressure gauge (not shown) on the piping 422.

[0056] Furthermore, the control unit 80 may enable mode selection between indentation control at a predetermined pressure using the displacement meter 421 and control based on actual load recognition using the load cell 419.

[0057] [Evaluation results with load cell] Figure 5 shows the output of the load cell and displacement meter when a bond load equivalent to 1 N is applied. Figure 6 shows the output of the load cell and displacement meter when a bond load equivalent to 10 N is applied.

[0058] In Figures 5 and 6, the left vertical axis represents the output of load cell 419 (load [N]), the right vertical axis represents the output of displacement gauges 421a and 421b (stroke [V]), and the horizontal axis represents time [sec]. Pressure is applied to the pressure-receiving surface of cylinder 418, and the load output from load cell 419 and the stroke during compression are measured by displacement gauge 421.

[0059] As shown in Figures 5 and 6, even when applying pressures equivalent to 1N and 10N bond loads and varying the indentation stroke, the load during indentation remains constant. Furthermore, using only the theoretical pressure calculated inversely from the bond load yielded results slightly different from the output results of load cell 419.

[0060] Since the pressure-receiving area of ​​cylinder 418 also varies, it is difficult to control the indentation load using only pressure control with a displacement meter, and the installation of a load cell 419 is effective for measuring the actual load. Here, pressure control using a displacement meter refers to a control method in which the relationship between pressure and displacement is investigated in advance using a load cell, and pressure is applied to cylinder 418 so that the desired bond load is achieved at the time of bonding.

[0061] This embodiment has at least one of the following effects.

[0062] (a) A load cell 419 is installed coaxially with the cylinder 418, and the actual bond load is measured and load control is performed, so even if there is warping of the substrate S or variation in the thickness of the die D, the load is stable and die mounting with a predetermined bond load is possible.

[0063] (b) Even if the collet material is different, it is possible to control the bond load at the desired load.

[0064] (c) Calibration, such as load adjustment and calibration, can also be performed on the device.

[0065] The disclosures made by the Disclosers have been described in detail based on embodiments, but the disclosures are not limited to the embodiments described above and can be modified in various ways.

[0066] For example, in one embodiment, a cylinder is described in which it is pressed by air pressure. The cylinder may also be pressed by hydraulic pressure or a linear motor instead of air pressure.

[0067] In the embodiments, an example using a die attach film has been described. This disclosure is not limited to this example. A preform section for applying adhesive to the substrate may be provided, and a die attach film may not be used. The preform section comprises a preform head for applying a paste-like adhesive and a preform table for driving the preform head in the vertical and horizontal directions.

[0068] In the embodiments, an example of a die bonder was described in which a die is picked up from a wafer supply unit by a pickup head and placed on an intermediate stage, and the die placed on the intermediate stage is bonded to a substrate by a bond head unit. The disclosure is not limited to this example. The disclosure also applies to die bonders that pick up dies from a wafer supply unit.

[0069] For example, this disclosure also applies to die bonders that lack an intermediate stage and a pickup head, and bond the die of the wafer supply unit to the substrate using a bond head unit.

[0070] Furthermore, this disclosure also applies to flip-chip bonders that lack an intermediate stage, pick up dies from a wafer supply unit, rotate a pickup head up and down to transfer the dies to a bond head unit, and bond them to a substrate using the bond head unit. [Explanation of Symbols]

[0071] 41. Bond head unit 411... Bondhead 418... Cylinder 419... Load cell

Claims

1. A bond head unit comprising a bond head, a load cell mounted on the bond head and on the central axis of the bond head, and a cylinder mounted on the load cell and on the central axis of the load cell.

2. In the bond head unit of claim 1, The bond head unit is such that the bond head is movable downward by the pressing force of the cylinder, and is movable upward when the pressing force of the cylinder is released.

3. The bond head unit according to claim 1, A Z-axis drive that drives the bond head unit up and down, A control unit configured to control the pressing force of the cylinder against the bond head based on the bond load detected by the load cell, A die bonding apparatus equipped with [a specific feature].

4. In the die bonding apparatus of claim 3, Furthermore, it is equipped with a regulator, The control unit is configured to control the pressure supplied by the regulator to the cylinder based on the bond load detected by the load cell in the die bonding apparatus.

5. In the die bonding apparatus of claim 4, further, A low-pressure regulator that generates a pressure lower than that of the aforementioned regulator, A solenoid valve that switches the output of the regulator and the low-voltage regulator, A die bonding apparatus equipped with [a specific feature].

6. In the die bonding apparatus of claim 4, Furthermore, a die bonding apparatus equipped with a displacement sensor on which the bond head is provided.

7. In the die bonding apparatus of claim 6, The control unit is configured to allow selection of modes between indentation control at a predetermined pressure using the displacement meter and control based on actual load recognition using the load cell.

8. In the die bonding apparatus of claim 3, A die bonding apparatus is provided with a collet for holding a die at the tip of the bond head.

9. A die bonding method using the bond head unit of claim 1, The bond head unit descends and places the die held by the bond head onto the substrate. The steps include pressing the bond head with the cylinder to load the die, The steps include controlling the pressing force of the cylinder against the bond head based on the bond load detected by the load cell, A die bonding method including

10. A method for manufacturing a semiconductor device, comprising the die bonding method of claim 9.

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