Indication device

Abstract

Reduces color mixing between adjacent subpixels. [Solution] According to one embodiment of the present disclosure, a display device is provided having a display area and a non-display area surrounding the display area, comprising a substrate, a first thin-film transistor and a second thin-film transistor disposed on the substrate, a light-emitting element disposed on the first thin-film transistor and the second thin-film transistor and including a first electrode, a light-emitting layer and a second electrode, and a sealing layer disposed on the light-emitting element, wherein the first electrode, the light-emitting layer and the second electrode are formed to have an uneven structure in at least a part of the light-emitting area.

Description

Technical Field

[0001] The present disclosure relates to a display device.

Background Art

[0002] As the information society develops, various requirements for display devices that display images are increasing, and various types of display devices such as liquid crystal displays (LCDs) and organic light emitting diode displays (OLEDs) are being utilized. In particular, organic light emitting diode displays do not require a separate light source and are in high demand due to their advantages in weight reduction and thinning.

[0003] However, although an organic light emitting display panel includes a light emitting layer that emits light, the light emitted from the light emitting layer cannot exit outside the organic light emitting display panel, and there is light trapped inside the organic light emitting display panel, resulting in a problem that the light extraction efficiency of the organic light emitting display panel decreases and the light emission efficiency decreases.

Summary of the Invention

Problems to be Solved by the Invention

[0004] An embodiment of this specification aims to provide a display device with improved color viewing angle and light extraction efficiency as a technical problem.

[0005] An embodiment of this specification aims to form a protrusion under an organic light emitting element and easily form an uneven structure shape of an organic insulating layer as a technical problem.

[0006] An embodiment of this specification aims to provide a display device having a structure that can prevent color mixing between adjacent sub-pixels as a technical problem.

[0007] An embodiment of this specification aims to provide a low-power display device as a technical problem.

[0008] However, the problems described herein are not limited to those described above, and further problems not described will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0009] A display device according to one embodiment is a display device having a display area and a non-display area surrounding the display area, comprising a substrate, a first thin-film transistor and a second thin-film transistor disposed on the substrate, a light-emitting element disposed on the first thin-film transistor and the second thin-film transistor and including a first electrode, a light-emitting layer and a second electrode, and a sealing layer disposed on the light-emitting element, wherein the first electrode, the light-emitting layer and the second electrode are formed to have an uneven structure in at least a part of the light-emitting area.

[0010] A display device according to another embodiment is a display device having a display area and a non-display area surrounding the display area, comprising a substrate, a first thin-film transistor and a second thin-film transistor disposed on the substrate, a light-emitting element disposed on the first thin-film transistor and the second thin-film transistor and including a first electrode, a light-emitting layer and a second electrode, and a sealing layer disposed on the light-emitting element, wherein the first electrode, the light-emitting layer and the second electrode are formed to have one or more protrusions projecting toward the front surface of the display device opposite to the substrate in at least a part of the light-emitting area. [Effects of the Invention]

[0011] According to embodiments of the present invention, a display device with improved color viewing angle and light extraction efficiency can be provided.

[0012] According to embodiments of the present invention, the embodiments described herein allow for the formation of a protruding portion at the lower part of the organic light-emitting element, and facilitate the formation of an uneven structure shape for the organic insulating layer.

[0013] According to embodiments of the present invention, a display device having a structure that can prevent color mixing between adjacent subpixels can be provided.

[0014] According to an embodiment of the present invention, a low-power display device can be provided.

[0015] The effects according to this specification are not limited to the above effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

Brief Description of the Drawings

[0016] [Figure 1] It is a plan view of a display device according to an embodiment. [Figure 2] It is a cross-sectional view showing the state where the display panel according to FIG. 1 is bent. [Figure 3] It is a plan layout view of sub-pixels in the display area of FIG. 1. [Figure 4] It is another embodiment of FIG. 3. [Figure 5] It is a cross-sectional view taken along the line A1 - A1' of FIG. 3 or FIG. 4. [Figure 6] It is another embodiment of FIG. 5. [Figure 7] It is a cross-sectional view of the touch portion according to FIGS. 5 and 6. [Figure 8] It is a cross-sectional view taken along the line B - B' of FIG. 1. [Figure 9] It is a cross-sectional view taken along the line C - C' of FIG. 1. [Figure 10] It is another embodiment of FIG. 3. [Figure 11] It is another embodiment of FIG. 12. [Figure 12] It is a cross-sectional view taken along the line A2 - A2' of FIG. 10 or FIG. 11. [Figure 13] It is another embodiment of FIG. 12.

Modes for Carrying Out the Invention

[0017] The advantages and features of this specification, and the ways to achieve them, will become clear by referring to the embodiments described in detail below together with the attached drawings. However, this specification is not limited to the embodiments disclosed below, but is embodied in various different forms, and these embodiments are provided so that the disclosure of this specification can be complete, and to fully inform those with ordinary knowledge in the technical field to which this specification belongs of the scope of this specification.

[0018] The shapes, areas, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of this specification are exemplary, so this specification is not limited to the matters illustrated. The same reference numerals throughout the specification refer to the same components. Also, in explaining this specification, when it is determined that a specific description of related publicly known technology makes the gist of this specification unnecessarily unclear, the detailed description thereof will be omitted. When terms such as "including", "having", "constituting", etc. mentioned in this specification are used, unless "only" is used, other parts may be added. When a component is expressed in the singular, it includes the case of including a plurality unless there is a particularly explicit description.

[0019] In interpreting components, even without a separate explicit description, it is interpreted as including an error range.

[0020] In the case of an explanation about the positional relationship, for example, when the positional relationship between both parts is explained such as "on", "above", "below", "beside", etc., unless "immediately" or "directly" is used, there may be one or more different parts located between both parts.

[0021] An element or layer being called "on" a different element or layer includes all cases where there is another layer or another element directly above or intervening between other elements.

[0022] Furthermore, while terms such as "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are simply used to distinguish one component from others. Therefore, the first component mentioned below may also be the second component within the technical concept of this specification.

[0023] Throughout the specification, the same reference numeral refers to the same component.

[0024] The area and thickness of each component shown in the drawings are illustrated for illustrative purposes only, and this specification is not necessarily limited to the area and thickness of the components shown.

[0025] The features of each of the multiple embodiments described herein can be combined or combined in part or in whole, enabling a variety of technical interdependencies and drives, and each embodiment may be implemented independently of the others, or together in relation to one another.

[0026] This specification will be described below with reference to the drawings.

[0027] Figure 1 is a plan view of a display device according to one embodiment.

[0028] Referring to Figure 1, a display device 1 according to one embodiment may include a display panel 100. The display panel 100 may include a display area DA containing a plurality of pixels PX, and a non-display area NDA surrounding the display area DA. The planar shape of the display area DA may be rectangular. However, it is not limited to this, and the planar shape of the display area DA may be square, circular, elliptical, or other polygonal. For example, the display area DA may be a rectangle with rounded corners, but is not limited to this, and may also be a rectangle with sharp corners.

[0029] In the embodiment, the first direction DR1 and the second direction DR2 are different directions and intersect each other, for example, perpendicularly in a plan view. From Figure 1, the first direction DR1 may generally be the same as the extension direction of the short side of the display panel 100, and the second direction DR2 may be the same as the extension direction of the long side of the display panel 100. However, the directions shown in the embodiment should be understood as referring to relative directions, and the embodiment is not limited to the directions shown.

[0030] The display area DA may include a short side extended along the first direction DR1 and a long side extended along the second direction DR2. The non-display area NDA may surround the display area DA. The non-display area NDA may be located on one side of the display area DA in the first direction DR1, the other side of the first direction DR1, one side of the second direction DR2, and the other side of the second direction DR2.

[0031] The display panel 100 may further include a sensor non-display area NDA_S and a sensor hole SH surrounded by the sensor non-display area NDA_S. The sensor holes SH1 and SH2 may be surrounded by a planar display area DA. There may be two sensor holes SH1 and SH2, for example, as shown in Figure 1, but the embodiments of this specification are not limited thereto. For example, there may be only one sensor hole. The two sensor holes SH1 and SH2 may each include a sensor hole in which an infrared sensor is placed and a sensor hole in which a camera sensor is placed, but the embodiments of this specification are not limited thereto. A sensor non-display area NDA_S may be placed between the sensor holes SH1 and SH2 and the display area DA. The sensor non-display area NDA_S may completely surround the sensor holes SH1 and SH2. Pixels PX do not need to be placed in the sensor non-display area NDA_S.

[0032] Gate drive units (GIPs) may be placed in the non-display area NDA located on one side of the first direction DR1 of the display area DA and on the other side of the first direction DR1. A low-voltage line (VSSL) may be placed outside the gate drive unit (GIP) on the non-display area NDA. For example, as shown in Figure 1, the low-voltage line VSSL may extend from the printed circuit board (FPCB), pass through the sub-area SR and the bending area BR, be located outside the gate drive unit (GIP) on the non-display area NDA, and surround the display area DA.

[0033] A non-display area NDA located on the other side of the display area DA in the second direction DR2 may be further extended in the direction of the other side of the second direction DR2 from the central part of the other side of the display area DA in the second direction DR2. At the central part of the other side of the display area DA in the second direction DR2, the width of the non-display area NDA further extended in the direction of the other side of the second direction DR2 may be even smaller than the width of the non-display area NDA adjacent to the other side of the display area DA in the second direction DR2.

[0034] The display device 1 may include a main area MR, a sub-area SR, and a bending area BR between the main area MR and the sub-area SR. The display area DA and the non-display area NDA surrounding the display area DA on all four sides constitute the main area MR, and the portion of the display area DA that extends further in the direction of the second direction DR2, at the other side of the central part of the second direction DR2, may constitute the bending area BR and the sub-area. The bending area BR may be located between the sub-area SR and the main area MR. The sub-area SR may include a first pad area PA1 and a second pad area PA2 located at the other end of the sub-area SR in the second direction DR2. The display device 1 may further include a data drive unit DIC and a printed circuit board FPCB. The data drive unit DIC may be located in the first pad area PA1, and the printed circuit board FPCB may be attached to the second pad area PA2. The first pad area PA1 and the second pad area PA2 may each contain a number of pads connected to the data drive unit DIC and the printed circuit board FPCB, respectively. The data drive unit DIC may be formed, for example, in the form of a drive chip DIC, but is not limited thereto. In one embodiment, the data drive unit DIC is shown as being arranged in a chip-on-plastic manner, directly mounted on the display panel 100, but is not limited thereto, and may also be arranged in a chip-on-glass manner or a chip-on-film manner.

[0035] A display panel 100 according to one embodiment may further include a crack detection pattern CSP surrounding a low-potential voltage line VSSL. The crack detection pattern CSP may be arranged to completely enclose the display area DA, as shown in Figure 1. For example, the crack detection pattern CSP may be located outside the low-potential voltage line VSSL. However, the embodiments herein are not limited to this, and the crack detection pattern CSP may not be partially located in the non-display area NDA on the other side of the second direction DR2 of the display area DA.

[0036] Figure 2 is a cross-sectional view showing the display panel shown in Figure 1 in a bent state.

[0037] Referring to Figure 2, in one embodiment, the bending region BR of the display panel 100 of the display device 1 can be bent in the thickness direction or in a third direction DR3. As a result, the main region MR and the sub-region SR can be superimposed in the thickness direction. The display panel 100 can be bent in such a way that the lower surface of the main region MR and the upper surface of the sub-region SR face each other. A printed circuit board FPCB may be attached to the edge of the sub-region SR.

[0038] Figure 3 is a planar arrangement diagram of the subpixels of the display area in Figure 1. Multiple first to third subpixels SP1, SP2, SP3 may be arranged. The emitted colors of the first to third subpixels SP1, SP2, SP3 may differ from each other. For example, the first subpixel SP1 may emit blue light, the second subpixel SP2 may emit green light, and the third subpixel SP3 may emit red light. However, this specification is not limited to this.

[0039] The light-emitting areas of the first to third subpixels SP1, SP2, and SP3 may differ from each other. For example, the light-emitting areas of the first subpixel SP1 and the second subpixel SP2 may differ from each other. The light-emitting areas of the first subpixel SP1 and the third subpixel SP3 may differ from each other. The light-emitting areas of the second subpixel SP2 and the third subpixel SP3 may differ from each other.

[0040] The first to third subpixels SP1, SP2, and SP3 may each include multiple protrusions 124. The planar shape of the protrusions 124 may be circular. However, it is not limited to this, and the planar shape of the protrusions 124 may be square, circular, elliptical, or other polygonal. Since the protrusions 124 can be realized in various shapes, a flexible configuration of the uneven structure can be realized. The number of protrusions 124 included in the first to third subpixels SP1, SP2, and SP3 may differ. For example, the first subpixel SP1 and the second subpixel SP2, which have different light-emitting areas, may each include different numbers of protrusions 124. Specifically, the first subpixel SP1, which has a larger light-emitting area than the second subpixel SP2 or the third subpixel SP3, may have even more protrusions 124. In other words, the number of protrusions 124 may differ for each subpixel.

[0041] Figure 4 shows another embodiment of Figure 3. Explanations that overlap with Figure 3 are omitted. Referring to Figure 4, the planar shape of the protrusion 124 can be a long cylindrical shape.

[0042] Figure 5 is a cross-sectional view taken along the line A1-A1' in Figure 3 or Figure 4. Figure 5 may be a diagram showing only some components and some areas located in a single subpixel SP, or it may be a diagram showing only some components and some areas located in a pad area.

[0043] Referring to Figure 5, the PX reference in Figure 1 of the display panel 100 may include multiple subpixels. Each subpixel may be a red, green, blue, or white subpixel, but the embodiments herein are not limited to these.

[0044] The display panel 100 may include a substrate 101, a first thin-film transistor 200, a second thin-film transistor 300, an organic light-emitting element OLED, a sealing portion 400, a touch portion 500, a black matrix 147, a color filter CF, and a planarization layer 149.

[0045] The display panel 100 may include at least one panel insulating layer between the substrate 101 and the organic light-emitting element OLED. The at least one panel insulating layer may include at least one of the multi-buffer layer 103, the first insulating layer 107, the second insulating layer 109, the third insulating layer 111, the fourth insulating layer 113, the fifth insulating layer 115, the sixth insulating layer 117, the fifth insulating layer 119, the first organic protective film 1121, the second protective film 123, and the third protective film. At least one touch layer may be placed on top of the organic light-emitting element OLED. The at least one touch insulating layer may include at least one of the touch buffer layer 501, the first touch insulating layer 503, and the second touch insulating layer 505. Hereinafter, the at least one panel insulating layer 103, 107, 109, 111, 113, 115, 117, and 119 may also be referred to as at least one panel inorganic layer.

[0046] The substrate 101 may contain one or more plastic materials. For example, the substrate 101 may be a multi-substrate containing multiple plastic materials such as polyimide. For example, the substrate 101 may include a first substrate portion 101a and a second substrate portion 101c, each containing a plastic material, and a third substrate portion 101b containing an inorganic insulating material between the first substrate portion 101a and the second substrate portion 101b, but the embodiments herein are not limited thereto.

[0047] A multi-buffer layer 103 may be placed on the substrate 101. The multi-buffer layer 103 can minimize or delay the diffusion of moisture or oxygen that penetrates the substrate 101. The multi-buffer layer 103 can be made by laminating silicon nitride (SiNx) and silicon oxide (SiOx) in at least one alternating layer, and the examples herein are not limited thereto.

[0048] A first light-shielding layer 105 may be placed on the multi-buffer layer 103. The first light-shielding layer 105 can prevent light from being transmitted to the first semiconductor layer 203 of the first thin-film transistor 200. For example, the first semiconductor layer 203 may be placed superimposed on the first light-shielding layer 105. The first light-shielding layer 105 may be a single layer or a multilayer made of molybdenum (Mo), aluminum (Al), chromium (Cr), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, but the embodiments herein are not limited thereto.

[0049] A first insulating layer 107 may be disposed on the multi-buffer layer 103 and the first light-shielding layer 105. The first insulating layer 107 can prevent short circuits between the configuration of the first thin-film transistor 200 and the first light-shielding layer 105. The first insulating layer 107 can be formed from the same material as the multi-buffer layer 103, but the embodiments herein are not limited thereto. For example, the first insulating layer 107 can be made of an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), but the embodiments herein are not limited thereto.

[0050] A first thin-film transistor 200 is arranged on the first insulating layer 107. The first thin-film transistor 200 may include a first source electrode 201, a first semiconductor layer 203, a first drain electrode 205, and a first gate electrode 207.

[0051] The first semiconductor layer 203 may be disposed on the first insulating layer 107. The first semiconductor layer 203 may include, but is not limited to, a silicon-based semiconductor material such as amorphous silicon or polycrystalline silicon. The first semiconductor layer 203 may be formed from a metal oxide semiconductor such as IGZO (Indium-Gallium-Zinc Oxide). The first semiconductor layer 203 may include a channel region, a source region, and a drain region.

[0052] Because polycrystalline semiconductor layers have higher mobility than amorphous and oxide semiconductor layers, they consume less power and have superior reliability. Therefore, drive transistors can be constructed using polycrystalline semiconductor layers.

[0053] A second insulating layer 109 may be placed on the first semiconductor layer 203. The second insulating layer 109 can be made of the same material as the first insulating layer 107, and can prevent short circuits between the first semiconductor layer 203 and other components of the first thin-film transistor 200.

[0054] A first gate electrode 207 may be disposed on the second insulating layer 109. The first gate electrode 207 can be disposed on the second insulating layer 109 so as to overlap with the channel region of the first semiconductor layer 203. The first gate electrode 207 may consist of a single layer or multiple layers comprising molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), or compounds thereof, but the examples herein are not limited thereto. The first gate electrode 207 may be disposed together with a gate line.

[0055] A third insulating layer 111 may be disposed on the first gate electrode 207. The third insulating layer 111 can be made by alternately laminating silicon nitride (SiNx) and silicon oxide (SiOx) at least once, and the examples herein are not limited thereto.

[0056] A first source electrode 201 and a first drain electrode 205 may be placed on the third insulating layer 111.

[0057] The first source electrode 201 and the first drain electrode 205 are electrically connected to the first semiconductor layer 203 through contact holes. The first source electrode 201 and the first drain electrode 205 may be formed of a metallic material. For example, the first source electrode 201 and the first drain electrode 205 may consist of a single or multiple layer made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper, or an alloy thereof, but the examples herein are not limited thereto.

[0058] The first source electrode 201 and the first drain electrode 205 may be arranged together with a data line. For example, the data line may be formed in the same material and layer as the first source electrode 201 and the first drain electrode 205, but the examples herein are not limited to this.

[0059] A storage electrode 220 may be positioned at a distance from the first thin-film transistor 200. The storage electrode 220 may include a first storage electrode 221 and a second storage electrode 223.

[0060] The first storage electrode 221 can be made of the same material and placed in the same layer as the first gate electrode 207, but the examples herein are not limited to this.

[0061] A second storage electrode 223 may be placed on the first storage electrode 221. The second storage electrode 223 may be placed on a third insulating layer 111, and capacitance may be formed between the first storage electrode 221 and the second storage electrode 223 with the third insulating layer 111 acting as a dielectric. The second storage electrode 223 can be made of the same material as the first storage electrode 221, but the embodiments herein are not limited to this.

[0062] A second thin-film transistor 300 may be positioned at a distance from the first thin-film transistor 200 and the storage electrode 220. The second thin-film transistor 300 may include a second source electrode 301, a second semiconductor layer 303, a second drain electrode 305, and a second gate electrode 307.

[0063] The second source electrode 301 may be made of the same material as the first source electrode 201. The second drain electrode 305 may be made of the same material as the first drain electrode 205.

[0064] A fourth insulating layer 113 may be placed on the storage electrode 220. A second light-shielding layer 114 may be placed on the fourth insulating layer 113.

[0065] The second light-shielding layer 114, like the first light-shielding layer 105, can prevent light from reaching the second semiconductor layer 303, thus potentially extending the lifespan of the second thin-film transistor 300. For example, the second semiconductor layer 303 can be arranged superimposed on the second light-shielding layer 114.

[0066] A fifth insulating layer 115 may be placed on the second light-shielding layer 114. The fifth insulating layer 115 may be the same material as the first insulating layer 107, the second insulating layer 109, the third insulating layer 111, and the fourth insulating layer 113, but the examples herein are not limited thereto.

[0067] A second semiconductor layer 303 may be placed on the fifth insulating layer 115. The second semiconductor layer 303 may include a source region, a drain region, and a channel region between the source region and the drain region.

[0068] The second semiconductor layer 303 may include a metal oxide semiconductor such as IGZO (Indium-Gallium-Zinc Oxide), a silicon substrate semiconductor material such as amorphous silicon, or polycrystalline silicon, but the examples herein are not limited thereto.

[0069] A sixth insulating layer 117 may be disposed on the second semiconductor layer 303. The sixth insulating layer 117 may be the same material as the first insulating layer 107, the second insulating layer 109, the third insulating layer 111, the fourth insulating layer 113, or the fifth insulating layer 115, but the examples herein are not limited thereto.

[0070] A second gate electrode 307 may be positioned on the sixth insulating layer 117. The second gate electrode 307 can be made of the same material as the first gate electrode 207. For example, the second gate electrode 307 may be formed of a single layer or multiple layers containing molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium-Nd, or compounds thereof, but the examples herein are not limited thereto.

[0071] A seventh insulating layer 119 may be disposed on the second gate electrode 307. The seventh insulating layer 119 may be the same material as the first insulating layer 107, the second insulating layer 109, the third insulating layer 111, the fourth insulating layer 113, the fifth insulating layer 115, or the sixth insulating layer 117, but the examples herein are not limited thereto.

[0072] A first source electrode 201, a first drain electrode 205, a second source electrode 301, and a second drain electrode 305 may be arranged on the seventh insulating layer 119.

[0073] The second source electrode 301 and the second drain electrode 305 may be made of the same material as the first source electrode 201 and the first drain electrode 205 and be arranged in the same layer, but the embodiments herein are not limited thereto. For example, the second source electrode 301 and the second drain electrode 305 may be a single layer or multiple layers made of one of the following materials or alloys thereof: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper, but the embodiments herein are not limited thereto. For example, the second source electrode 301 may be electrically connected to the second storage electrode 223. The second source electrode 301 may be electrically connected to the second storage electrode 223 by penetrating the seventh insulating layer 119, the sixth insulating layer 117, the fifth insulating layer 115, and the fourth insulating layer 113.

[0074] The first thin-film transistor 200 may be a switching transistor and the second thin-film transistor 300 may be a driving transistor, but the embodiments herein are not limited thereto.

[0075] A first organic insulating layer 121 may be disposed on the second thin-film transistor 300. The first organic insulating layer 121 can flatten and protect the tops of the first thin-film transistor 200 and the second thin-film transistor 300. The first organic insulating layer 121 may be composed of an organic material. For example, the first organic insulating layer 121 may be formed of an organic material including acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin, but the examples herein are not limited to these.

[0076] A second organic insulating layer 123 may be disposed on the first organic insulating layer 121. The second organic insulating layer 123 can be formed from the same material as the first organic insulating layer 121, but the examples herein are not limited thereto.

[0077] A third organic insulating layer 125 may be disposed on the second organic insulating layer 123. The third organic insulating layer 125 may be formed from the same material as the second organic insulating layer 123 or the first organic insulating layer 121, but the examples herein are not limited thereto.

[0078] A fourth organic insulating layer (not disclosed) may be further disposed on the third organic insulating layer 125, but the examples herein are not limited thereto.

[0079] A connecting electrode 122 may be placed between the first organic insulating layer 121 and the second organic insulating layer 123.

[0080] The connecting electrode 122 can electrically connect the second thin-film transistor 300 and the organic light-emitting element OLED. The connecting electrode 122 may be a single or multilayer made of one of the following materials: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper, or an alloy thereof, but the examples herein are not limited thereto.

[0081] Organic light-emitting elements (OLEDs) may be arranged on the third organic insulating layer 125 and the second organic insulating layer 123. The organic light-emitting elements (OLEDs) include a first electrode E1, an emissive layer EL, and a second electrode E2. The first electrode E1 may be an anode electrode and the second electrode E2 may be a cathode electrode, but the present invention is not limited thereto.

[0082] The third organic insulating layer 125 may be positioned below the first electrode E1 in a round, lens-like shape. For example, the third organic insulating layer 125 may have a concave-convex structure and have at least one or more protruding structures (e.g., protrusions 124). As shown in Figure 5, each of the one or more protruding elements is covered with the third organic insulating layer 125. The cross-sectional shape of the third organic insulating layer 125 may be semicircular. However, it is not limited to this, and the cross-sectional shape of the third organic insulating layer 125 may be square, semi-elliptical, or other polygonal. Because the third organic insulating layer 125 can be realized in various shapes, a flexible arrangement of concave and convex structures is possible.

[0083] The uneven structure of the third organic insulating layer 125 is not connected to each other and can be separated. The first electrode E1, positioned between multiple third organic insulating layers 125, can come into contact with the second organic insulating layer 123.

[0084] A protrusion 124 may be positioned below each uneven structure of the third organic insulating layer 125. The protrusion 124 may be positioned on the flat upper surface of the second organic insulating layer 123. The protrusion 124 can act as a structure that causes the third organic insulating layer 125 positioned on top to have a structure that bends and protrudes toward the front, so that the organic light-emitting element OLED positioned on top of the third organic insulating layer 125 may be provided with a bent uneven structure. Since the first electrode E1, the light-emitting layer EL, and the second electrode E2 are formed on the third organic insulating layer 125 in the light-emitting region, the uneven structure formed by the first electrode E1, the light-emitting layer EL, and the second electrode E2 of the organic light-emitting diode (OLED) may correspond to the uneven structure of the third organic insulating layer 125. As shown in Figure 5, the uneven structure formed by the first electrode E1, the light-emitting layer EL, and the second electrode E2 may be formed in at least a portion of the light-emitting region. Therefore, the organic light-emitting device OLED (first electrode E1, light-emitting layer EL, and second electrode E2) has one or more protrusions in the light-emitting region, and these protrusions protrude (e.g., bend) toward the front (in the direction opposite to the substrate 101), and one or more protrusions may correspond to a third organic insulating layer 125 having a protruding structure. As shown in Figure 5, when multiple protrusions 124 are provided within the light-emitting region, the multiple protrusions 124 may be spaced apart from each other.

[0085] The protrusion 124 may be formed of a metallic material. For example, the protrusion 124 may be a single or multiple layer made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper, or an alloy thereof, but the embodiments herein are not limited thereto. By arranging the protrusion 124, it is possible to easily form the taper and thickness adjustment of the third organic insulating layer 125. For example, the taper of the third organic insulating layer 125 may be formed higher on the upper part of the protrusion 124. For example, the taper of the third organic insulating layer 125 may be formed in a shape that is higher on the protrusion of the protrusion 124 compared to the side surface of the protrusion 124. For example, the thickness of the third organic insulating layer 125 may be formed thicker on the upper part of the protrusion 124. For example, the thickness of the third organic insulating layer 125 may be formed thicker on the protruding part of the protrusion 124 compared to the side surface of the protrusion 124. Therefore, this has the effect of easily forming the uneven structure of the third organic insulating layer 125.

[0086] The protruding portion 124 may have a rectangular cross-sectional shape. However, it is not limited to this, and the cross-sectional shape of the protruding portion 124 may be a square, semicircular, semielliptical, or other polygon. Since the protruding portion 124 can be realized in various shapes, a flexible configuration of the uneven structure can be achieved.

[0087] The uneven structure of the protruding portion 124 and the third organic insulating layer 125 is formed along the curved surface of the organic light-emitting element OLED, scattering a large amount of light and potentially improving the color viewing angle and light extraction efficiency.

[0088] The second organic insulating layer 123 may have at least one recess in a single subpixel region. The at least one recess may be located in the portion of the second organic insulating layer 123 that overlaps with the first bank 127. The first organic insulating layer 121 may be exposed by the at least one recess, and the second organic insulating layer 123 may have a step equal to the thickness of the second organic insulating layer 123 in the portion where the at least one recess is formed.

[0089] As a result, the first bank 127 laminated on the upper surface of the second organic insulating layer 123 can also have a step, and the length of the common layer including the light-emitting layer EL provided on top of the first bank 127 can be made relatively longer by the step of the first bank 127, which can reduce the lateral current flowing through the common layer from any one subpixel to an adjacent subpixel. As a result, at least one recess of the present invention can reduce the lateral current flowing through the common layer including the light-emitting layer EL to an adjacent subpixel, and can prevent crosstalk between adjacent subpixels.

[0090] The first electrode E1 can be connected to the connecting electrode 122 through a contact hole formed in the second organic insulating layer. The first electrode E1 can also be electrically connected to the second thin-film transistor 300 via the connecting electrode 122. The first electrode E1 may be a reflective electrode that reflects light, but the embodiments herein are not limited thereto. The first electrode E1 may contain a highly reflective metallic material such as a Ti / Al / Ti laminated structure of aluminum (Al) and titanium (Ti), an ITO / Al / ITO laminated structure of aluminum (Al) and ITO, or an APC alloy, and may consist of a single layer or multiple layers, but the embodiments herein are not limited thereto.

[0091] A light-emitting layer EL may be disposed on the first electrode E1. The light-emitting layer EL may include one or more light-emitting structures or light-emitting elements or devices stacked on the first electrode E1 in the order of a hole transfer layer and an electron transfer layer, or in reverse order. For example, the hole transfer layer may include a hole transport layer, a hole injection layer, an electron blocking layer, or a P-type charge generation layer, but the embodiments herein are not limited thereto. For example, the electron transfer layer may include an electron transport layer, an electron injection layer, a hole blocking layer, or an N-type charge generation layer, but the embodiments herein are not limited thereto.

[0092] The light-emitting layer EL may be an organic light-emitting layer, an inorganic light-emitting layer, a quantum dot light-emitting layer, a micro light-emitting diode, or a micro mini light-emitting diode, but the embodiments herein are not limited thereto. For example, the light-emitting layer EL of the display panel 100 according to one embodiment herein may include an organic light-emitting layer. The light-emitting layer EL may include a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer. The light-emitting layer EL may further include a white light-emitting layer, but the embodiments herein are not limited thereto.

[0093] A second electrode E2 may be placed on the light-emitting layer EL. The second electrode E2 may be a transparent electrode that transmits light, but the embodiments herein are not limited thereto. For example, the second electrode E2 may include a transparent conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) or a metal that transmits visible light, but the embodiments herein are not limited thereto.

[0094] The first bank 127 may be positioned to expose the first electrode E1. The first bank 127 may define the light-emitting region of the subpixel and may be positioned to cover the edge portion, frame portion, or peripheral portion of the first electrode E1.

[0095] The first bank 127 may contain a black substance. For example, the first bank 127 can be composed of a substance containing a black pigment, or an organic substance such as benzocyclobutene resin, polyimide resin, acrylic resin, or photosensitive polymer, but the examples herein are not limited to these. When the first bank 127 is composed of a substance containing a black pigment or black dye, it can be a black bank. When the first bank 127 is composed of a substance containing a black pigment or black dye, it can block light from the outside or light reflected from the outside, thereby improving the brightness of the display device. The first bank 127 can play a role in absorbing light that is incident from the outside and reflected again at the bottom of the first bank 127.

[0096] A second bank 129 may be arranged on the first bank 127. The second bank 129 may contain a transparent material. The second bank 129 may be a transparent bank, but the examples herein are not limited thereto.

[0097] Specifically, the second bank 129 may be located on the top or side surface of the first bank 127. Alternatively, the second bank 129 may be located on at least a portion of the first electrode E1 where the first bank 127 is not located. For example, the second bank 129 may be located on the side or top surface of the first electrode E1 located in a recess of the third organic insulating layer 125.

[0098] A spacer 131 may be further positioned on the second bank 129. The spacer 131 may be made of the same material as the second bank 129, but the embodiments herein are not limited thereto. For example, the spacer 131 may be a transparent bank. The spacer 131 may be formed of the same material as the second bank 129 and may be formed simultaneously with the second bank 129 through a halftone mask, but the embodiments herein are not limited thereto.

[0099] The first bank 127 and the second bank 129 may include trenches TR. The first bank 127 may penetrate the second organic insulating layer 123 to form a trench TR, and the first bank 127 may fill the trench TR. The spacer 131 on the second bank 129 may be isolated by the trench TR. The light-emitting layer EL positioned above the second bank 129 and spacer 131 may have reduced thickness in the trench TR region (e.g., the trench TR formed by spacer 131 and the second bank 129). The reduced thickness of the light-emitting layer EL increases resistance and may improve leakage current between adjacent subpixels. This reduction in the thickness of the light-emitting layer EL is not necessarily shown in all drawings.

[0100] The light-emitting layer EL may be placed on the first electrode E1, the first bank 127, the second bank 129, and the spacer 131. A second electrode E2 may be placed on the light-emitting layer EL.

[0101] A sealing portion 400 may be disposed on the second electrode E2. The sealing portion 400 may include one or more insulating layers. For example, the sealing portion 400 may include a first sealing layer 401, a second sealing layer 403 on the first sealing layer 401, and a third sealing layer 405 on the second sealing layer 403. The sealing portion 400 may include one or more inorganic insulating material layers and one or more organic material layers. For example, the first sealing layer 401 and the third sealing layer 405 may contain inorganic insulating materials, and the second sealing layer 403 may contain organic materials, but the embodiments herein are not limited thereto.

[0102] A touch portion 500 may be disposed on the sealing portion 400. The touch portion 500 may include a touch buffer layer 501, a first touch conductive layer, a first touch insulating layer 503, a second touch insulating layer 505, and a second touch conductive layer. A third touch insulating layer may be disposed on the second touch conductive layer, but the embodiments herein are not limited thereto.

[0103] A first touch conductive layer may be placed on the touch buffer layer 501. The first touch conductive layer may include a bridge electrode 507. A second touch conductive layer, which may include the bridge electrode and a sensor electrode 509 (described later), may be placed at the boundary between adjacent subpixels. For example, the bridge electrode 507 and the sensor electrode 509 may be placed in a non-emissive region. The bridge electrode 507 and the sensor electrode 509 may be superimposed perpendicularly to the black matrix 147 (described later) and the substrate 101. The black matrix 147 may cover the bridge electrode 507 and the sensor electrode 509. This prevents the bridge electrode 507 and the sensor electrode 509 from being visible from the outside.

[0104] A first touch insulating layer 503 may be disposed on the first touch conductive layer, and a second touch insulating layer 505 may be disposed on the first touch insulating layer 503. The first touch insulating layer 503 and the second touch insulating layer 505 can prevent a short circuit between the first touch conductive layer and the second touch conductive layer. The first touch insulating layer 503 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof, but the examples herein are not limited thereto. The second touch insulating layer 505 may contain an organic insulating material or an inorganic insulating material, but the examples herein are not limited thereto, and may contain the same material as the first touch insulating layer 503.

[0105] A second touch conductive layer may be disposed on the second touch insulating layer 505. The second touch conductive layer may include a sensor electrode 509.

[0106] The sensor electrode 509 can be electrically connected to the bridge electrode 507 through contact holes formed in the first touch insulating layer 503 and the second touch insulating layer 505.

[0107] The sensor electrode 509 and the bridge electrode 507 may contain a metallic material. For example, they may be composed of titanium (Ti), nickel (Ni), aluminum (Al), or alloys thereof, and may consist of three layers such as titanium (Ti) / aluminum (Al) / titanium (Ti), but the examples herein are not limited to these.

[0108] The detailed configuration of the touch unit 500 will be described later in Figure 7.

[0109] A cover buffer layer 139 may be placed on the second touch conductive layer. The cover buffer layer 139 can be made of an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), but the examples herein are not limited to these.

[0110] A black matrix 147 may be placed on the cover buffer layer 139. The black matrix 147 may contain black-based materials. For example, the black matrix 147 may contain light-blocking or light-absorbing materials. For example, the black matrix 147 may be composed of materials containing black pigments or black dyes. The black matrix 147 can cover the bridge electrode 507 and the sensor electrode 509. This prevents the bridge electrode 507 and the sensor electrode 509 from being visible from the outside.

[0111] A color filter CF can be placed on the black matrix 147.

[0112] A color filter CF can be placed in each subpixel to block a specific color from the light emitted in the light-emitting region of each subpixel. For example, a color filter placed in a subpixel that emits red light can be provided to block light of the remaining colors except red light. However, the embodiments herein are not limited thereto.

[0113] The color filters CF may be in direct contact with the side and top surfaces of the black matrix 147, respectively. For example, multiple color filters CF may be spaced apart from the boundaries of adjacent subpixels, but the embodiments herein are not limited to this, and may also be superimposed perpendicular to the substrate.

[0114] A planarization layer 149 may be placed on the color filter CF. The planarization layer 149 may serve to flatten the step formed by the color filter CF. The planarization layer 149 may contain an organic insulating material.

[0115] Figure 6 is another embodiment of Figure 5. Explanations that overlap with Figure 5 will be omitted.

[0116] Referring to Figure 6, the third organic insulating layer 125 may be positioned above the second organic insulating layer 123. The third organic insulating layer 125 may be positioned below the first electrode E1 and below the first bank 127. The first electrode E1 may be positioned between the third organic insulating layer 125 and the first bank 127. The first electrode E1 may be positioned on the top and side surfaces of the third organic insulating layer 125. Specifically, the first electrode E1 may be positioned in a slanted region of the third organic insulating layer 125. Therefore, some of the light emitted from the light-emitting layer EL may be reflected by the first electrode E1 in the slanted region and extracted to the outside of the panel 100, potentially improving light extraction. Furthermore, by positioning the first electrode E1 in the slanted region, some of the side light emitted from the light-emitting layer EL may be blocked, potentially preventing color mixing in adjacent subpixels.

[0117] A light-emitting layer EL may be placed on the first electrode E1. A second electrode E2 may be placed on the light-emitting layer EL. The first electrode E1 can be electrically connected to the second thin-film transistor 300 through a protrusion 124 (e.g., a second protrusion 124) and a connecting electrode 122. The protrusion 124 may penetrate the second organic insulating layer 123 to form a contact hole. The connecting electrode 122 may penetrate the first organic insulating layer 121 to form a contact hole. Since the second protrusion 124 is formed by the same process as the protrusion 124 placed under each of the above-described uneven structures, a decrease in process efficiency can be prevented.

[0118] Figure 7 is a cross-sectional view of the touch area according to Figures 5 and 6. Components that overlap with those in Figure 5 are omitted.

[0119] Referring to Figure 7, a second touch conductive layer may be disposed on the second touch insulating layer 505. The second touch conductive layer may include a first sensor electrode 509a and a second sensor electrode 509b. The sensor electrode 507 may include a first sensor electrode 509a extending in a first direction (see DR1 in Figure 1) and a second sensor electrode 509b extending in a second direction perpendicular to the first direction DR1 (see DR2 in Figure 1).

[0120] The bridge electrode 507 can be electrically connected to the first sensor electrode 509a through contact holes formed in the first touch insulating layer 503 and the second touch insulating layer 505. For example, the first sensor electrode 509a and the bridge electrode 507 may extend in the direction of DR1 in Figure 1.

[0121] Figure 8 is a cross-sectional view taken along the line B-B' in Figure 1.

[0122] Referring to Figure 8, at least one panel inorganic layer 103, 107, 109, 111, 113, 115, 117, 119 does not have to extend to the edge of the substrate 101. That is, at least one panel inorganic layer 103, 107, 109, 111, 113, 115, 117, 119 may expose the edge of the substrate 101, but the embodiments herein are not limited thereto.

[0123] A display panel 100 according to one embodiment may further include a crack detection pattern CSP, a low-voltage line VSSL, and a gate drive unit GIP. As described above in Figure 1, the low-voltage line VSSL may be located between the crack detection pattern CSP and the display area DA, and the gate drive unit GIP may be located between the low-voltage line VSSL and the display area DA.

[0124] For example, the gate drive unit GIP may consist of a conductive layer located in the same layer as the first gate electrode (see 207 in Figure 5), a conductive layer located in the same layer as the second light-shielding layer (see 114 in Figure 5), or a conductive layer located in the same layer as the first source electrode 201, as shown in Figure 8, but the embodiments of this specification are not limited thereto.

[0125] For example, the crack sensing pattern CSP may be positioned between the first dam D1 and the second dam D2. The crack sensing pattern CSP may consist of a conductive layer located in the same layer as the first gate electrode (see 207 in Figure 5) or a conductive layer located in the same layer as the second light-shielding layer (see 114 in Figure 5), but the embodiments herein are not limited thereto. For example, the crack sensing pattern CSP may include a conductive layer located in the same layer as the first source electrode 201, but the embodiments herein are not limited thereto.

[0126] The low-voltage line VSSL may be positioned between the crack sensing pattern CSP and the gate drive unit GIP. The low-voltage line VSSL may consist of a conductive layer located on the same layer as the first source electrode 201, but the embodiments herein are not limited thereto.

[0127] The first organic insulating layer 121 covers the gate drive unit GIP, partially covers one end of the low-potential voltage line VSSL, and may expose the other part of the low-potential voltage line VSSL. In this specification, one end may mean a region located in the direction from the non-display area NDA to the display area DA of a certain configuration, and the other end may mean a region located in the direction from the display area DA to the non-display area NDA of a certain configuration.

[0128] A first connecting electrode CNE1 may be placed on the first organic insulating layer 121, on the same layer as the connecting electrode 122. The first connecting electrode CNE1 can be directly connected to the region of the low-potential voltage line VSSL where the first organic insulating layer 121 is exposed. The first connecting electrode CNE1 can cover the other end of the low-potential voltage line VSSL, but the embodiments herein are not limited thereto.

[0129] A second organic insulating layer 123 may be placed on the first connecting electrode CNE1. The second organic insulating layer 123 can be in direct contact with and cover one end of the first connecting electrode CNE1, while exposing the other portion of the first connecting electrode CNE1.

[0130] A third organic insulating layer 125 may be placed on the second organic insulating layer 123.

[0131] The third organic insulating layer 125 may constitute the first layer of the first dam D1 and the first layer of the second dam D2. The first dam D1 may, for example, be superimposed on a low-potential voltage line VSSL and cover the other end of the low-potential voltage line VSSL. The first dam D1 may be in direct contact with the first connecting electrode CNE1 and cover the other end of the first connecting electrode CNE1. The third organic insulating layer 125 constituting the first layer of the second dam D2 may be in direct contact with the exposed side surface of at least one panel inorganic layer 103, 107, 109, 111, 113, 115, 117, 119 and may be in direct contact with the top surface of the substrate 101, but the embodiments herein are not limited thereto. The third organic insulating layer 125 may be superimposed on the gate drive unit GIP. Although the dam is exemplified herein as being composed of two dams, there may be three or more dams or just one dam.

[0132] A protrusion 124 may be positioned on the second organic insulating layer 123. The protrusion 124 may be a signal trace in the gate drive unit (GIP). For example, it may be a signal trace for the transistor's power supply voltage VGL, VGH, or clock CLK. That is, the gate drive unit (GIP) is provided with a signal trace on the same second organic insulating layer 123 as the protrusion 124 (e.g., the third protrusion 124) provided in the light-emitting region, and containing the same material as the protrusion 124 provided in the light-emitting region. As shown in Figure 8, for example, the third protrusion 124 may be connected to a connecting electrode 122 via a contact hole in the second organic insulating layer 123. Since the third protrusion 124 is formed by the same process as the protrusions 124 and / or the second protrusions 124 described above, which are positioned under each of the uneven structures described above, a decrease in process efficiency can be prevented.

[0133] The first connecting electrode CNE1 is exposed by the third organic insulating layer 125, and a low-potential connecting electrode E1a may be placed on the third organic insulating layer 125, on the same layer as the first electrode (see E1 in Figure 5). The low-potential connecting electrode E1a may be electrically connected to the first connecting electrode CNE1 exposed by the third organic insulating layer 125. The low-potential connecting electrode E1a may be electrically connected to the second electrode (see E2 in Figure 5) described above in Figure 4.

[0134] A first bank 127 and a second bank 129 may be arranged on the low-potential connection electrode E1a and the third organic insulating layer 125. The first bank 127 and the second bank 129 may overlap with the gate drive unit GIP, overlap with the low-potential connection electrode E1a, and cover the other end of the low-potential connection electrode E1a. The first bank 127 and the second bank 129 may completely cover the low-potential connection electrode E1a, but the embodiments herein are not limited thereto. The first bank 127 and the second bank 129 may expose the central portion and the other end of the first connection electrode CNE1, but the embodiments herein are not limited thereto. The first bank 127 may constitute the second layer of the first dam D1 and the second layer of the second dam D2. In each dam D1 and D2, the first bank 127 may overlap with the third organic insulating layer 125 that constitutes the first layer, and may completely cover the third organic insulating layer 125, but the embodiments herein are not limited thereto. In the second dam D2, the first bank 127 may be in contact with the side surface of the third organic insulating layer 125 and the upper surface of the substrate 101, but the embodiments herein are not limited thereto. The second bank 129 may constitute the third layer of dams D1 and D2. The second bank 129, which forms the third layer of each dam D1 and D2, may overlap with the first bank 127, which forms the second layer, and completely cover the first bank 127, but the embodiments herein are not limited thereto. In the second dam D2, the second bank 129 may be in contact with the side surface of the first bank 127 and the upper surface of the substrate 101, but the embodiments herein are not limited thereto.

[0135] Spacer 131 can constitute the fourth layer of the first dam D1 and the fourth layer of the second dam D2. In each dam D1 and D2, spacer 131 can overlap with the second bank 129 which constitutes the third layer. In the second dam D2, spacer 131 can overlap with the second bank 129 which constitutes the third layer.

[0136] A sealing portion 400 may be placed on the spacer 131. The first sealing layer 401 may extend to the gate drive unit GIP, the low-voltage line VSSL, the first dam D1, and the second dam D2, and may cover the outer surface of the second dam D2. The second sealing layer 403 may terminate from the first dam D1. The second sealing layer 403 may overlap the gate drive unit GIP and the low-voltage line VSSL. The third sealing layer 405 may extend to the gate drive unit GIP, the low-voltage line VSSL, the first dam D1, and the second dam D2, and may be in direct contact with the first sealing layer on the first dam D1, the crack sensing pattern CSP, and the second dam D2.

[0137] The touch buffer layer 501 and the first touch insulating layer 503 extend to the gate drive unit GIP, the low-voltage line VSSL, the first dam D1 and the second dam D2, and may cover the outer surface of the second dam D2. The second touch insulating layer 505 extends to the gate drive unit GIP, the low-voltage line VSSL, the first dam D1, and the crack sensing pattern CSP, and may stop on the second dam D2, but the embodiments herein are not limited thereto.

[0138] The cover buffer layer 139 extends to the gate drive unit GIP, the low-voltage line VSSL, the first dam D1, and the second dam D2, and may be in direct contact with the outer surface of the second touch insulating layer 505, but the embodiments herein are not limited thereto.

[0139] Figure 9 is a cross-sectional view taken along the line C-C' in Figure 1.

[0140] Referring to Figures 5, 8, and 9, a bending region BR may be positioned between the sub-region SR and the crack sensing pattern CSP. In the bending region BR, the panel inorganic layers 103, 107, 109, 111, 113, 115, 117, and 119 may be removed to expose the upper surface of the substrate 101.

[0141] A pad electrode PAD is placed in the first pad region PA1, arranged on the same layer as the first source electrode (see reference 201 in Figure 5), and a third connecting electrode CNE3 may be placed on the crack sensing pattern CSP, also arranged on the same layer as the first source electrode (see reference 201 in Figure 5).

[0142] A first organic insulating layer 121 may be placed on the pad electrode PAD and the third connecting electrode CNE3. A first organic insulating layer 111 is placed in the bending region BR, and the first organic insulating layer 121 is in direct contact with the upper surface of the substrate 101 and can be in direct contact with the sides of the panel inorganic layers 103, 107, 109, 111, 113, 115, 117, and 119 in the bending region BR.

[0143] A second connecting electrode CNE2 is placed on the first organic insulating layer 211, and the second connecting electrode CNE2 may be placed on the same layer as the connecting electrode (see 122 in Figure 5). The second connecting electrode CNE2 can electrically connect the pad electrode PAD and the third connecting electrode CNE3. The second connecting electrode CNE2 is placed on the bending region BR, and may also be placed on the first pad region PA1 and the crack sensing pattern CSP.

[0144] A data drive unit (DIC) may be placed on the pad electrode (PAD). The data drive unit (DIC) includes a bump (BUMP), and an anisotropic conductive film (ACF) is placed between the pad electrode (PAD) and the bump (BUMP), and the anisotropic conductive film (ACF) can electrically connect the pad electrode (PAD) and the bump (BUMP). The anisotropic conductive film (ACF) may include a resin (RS) and a plurality of conductive balls (CB) dispersed within the resin (RS). The pad electrode (PAD) and the bump (BUMP) can be electrically connected through the conductive balls (CB).

[0145] A second organic insulating layer 123 may be placed on the second connecting electrode CNE2. The second organic insulating layer 123 may expose the pad electrode PAD.

[0146] A third organic insulating layer 125 may be placed on the second organic insulating layer 123. The third organic insulating layer 125 may expose the pad electrode PAD.

[0147] The first and third sealing layers 401 and 405 of the sealing portion 400 may extend to the front of the bending region BR. For example, the first and third sealing layers 401 and 405 may extend to the front of the crack sensing pattern CSP, but the embodiments herein are not limited to this and may also overlap with the crack sensing pattern CSP. The first and third sealing layers 401 and 405 do not have to be placed in the bending region BR.

[0148] The touch buffer layer 501 and the first touch insulating layer 503 can be extended to the bending region BR. For example, the touch buffer layer 501 and the first touch insulating layer 503 can be extended to the crack sensing pattern CSP, but the embodiments herein are not limited thereto, and they may also overlap with the crack sensing pattern CSP. The touch buffer layer 501 and the first touch insulating layer 503 do not have to be placed in the bending region BR.

[0149] The second touch insulating layer 505 may be superimposed on the first dam D1 and the second dam D2. The second touch insulating layer 505 does not have to be located outside the second dam D2, but the embodiments herein are not limited thereto.

[0150] The touch connection wiring 510 can be electrically connected to the second connection electrode CNE2. The touch connection wiring 510 may serve to provide signals applied from the pad electrode PAD and the second connection electrode CNE2 to the first sensor electrode 509a or the second sensor electrode 509b as described in Figure 6. The touch connection wiring 510 may be located on the same layer as the second touch conductive layer (the first sensor electrode 509a in Figure 4), but the embodiments herein are not limited thereto, and may be located on the same layer as the first touch conductive layer (the bridge electrode 507 in Figure 7), or may consist of two touch connection wirings 510. For example, the first touch connection wiring and the second touch connection wiring may be located on the same layer as the first touch conductive layer and the second touch conductive layer, respectively. However, the embodiments herein are not limited thereto.

[0151] A flattening layer 149 is placed on the touch connection wiring 510, and the flattening layer 149 does not necessarily have to be placed in the bending region BR.

[0152] Figure 10 shows another embodiment of Figure 3. The configurations that overlap with Figure 3 are not explained.

[0153] Referring to Figure 10, the first to third subpixels SP1, SP2, and SP3 may each include a plurality of protrusions 124. Auxiliary protrusions 126 are further provided superimposed on the protrusions 124. As shown, the auxiliary protrusions 126 are arranged superimposed on each protrusion 124, which can further improve the light scattering characteristics within the light-emitting region. As shown, the width of the auxiliary protrusions 126 in the planar direction B-B' may be smaller than the width of the protrusions 124 in the planar direction.

[0154] The auxiliary protrusion 126 may be formed from the same material as the third organic insulating layer 125, but the examples herein are not limited thereto.

[0155] The planar shape of the protrusion 124 may be circular. However, it is not limited to this, and the planar shape of the protrusion 124 may be square, circular, elliptical, or other polygonal. The number of protrusions 124 containing the first to third subpixels SP1, SP2, and SP3 may differ. For example, the first subpixel SP1 and the second subpixel SP2, which have different light-emitting areas, may contain different numbers of protrusions 124. Specifically, the first subpixel SP1, which has a larger light-emitting area than the second subpixel SP2 or the third subpixel SP3, may have even more protrusions 124. In other words, the number of protrusions 124 may differ for each subpixel.

[0156] The planar shape of the auxiliary protrusion 126 may be circular. However, it is not limited to this, and the planar shape of the auxiliary protrusion 126 may be square, circular, elliptical, or other polygonal. Since the auxiliary protrusion 126 can be realized in various shapes, a flexible configuration of the concave and convex structure can be realized. The number of auxiliary protrusions 126 that include the first to third subpixels SP1, SP2, and SP3 may differ. For example, the first subpixel SP1 and the second subpixel SP2, which have different light-emitting areas, may contain different numbers of auxiliary protrusions 126. Specifically, the first subpixel SP1, which has a larger light-emitting area than the second subpixel SP2 or the third subpixel SP3, may have even more auxiliary protrusions 126. In other words, the number of auxiliary protrusions 126 may differ for each subpixel.

[0157] The number of protrusions 124 and auxiliary protrusions 126 within a single subpixel may be the same, but the embodiments described herein are not limited to this.

[0158] Figure 11 shows another embodiment of Figure 10. Explanations that overlap with Figure 10 are omitted.

[0159] Referring to Figure 11, the protruding portion 124 and the auxiliary protruding portion 126 may have a long cylindrical shape in their planar form.

[0160] Figure 12 is a cross-sectional view taken along the line A2-A2' in Figure 10 or Figure 11. Explanations that overlap with Figure 5 are omitted.

[0161] Referring to Figure 12, auxiliary protrusions 126 can be arranged on the third organic insulating layer 125. The auxiliary protrusions 126 are arranged superimposed on the top of each protrusion 124, but can be located between the third organic insulating layer 125 and the first electrode E1, and the radius of curvature of the auxiliary protrusions 126 in the thickness direction can be smaller than the radius of curvature of the third organic insulating layer 125 in the thickness direction. In this way, by relatively reducing the radius of curvature of the auxiliary protrusions 126 in the thickness direction, the organic light-emitting element OLED can be provided with a more bent uneven structure, and the light scattering characteristics within the light-emitting region can be further improved.

[0162] The cross-sectional shape of the auxiliary protrusion 126 may be semicircular. However, it is not limited to this, and the cross-sectional shape of the auxiliary protrusion 126 may be square, rectangular, semi-elliptical, or other polygonal. Since the auxiliary protrusion 126 can be realized in various shapes, a flexible configuration of the uneven structure can be realized. The auxiliary protrusion 126 may have an area even smaller than the area of ​​the protrusion 124 and the third organic insulating layer 125 corresponding to the auxiliary protrusion 126.

[0163] In the organic light-emitting element OLED formed along the auxiliary protrusion 126 and the curved surface of the third organic insulating layer 125, a large amount of light is scattered, which can improve the color viewing angle and light extraction efficiency. Compared to Figure 5, the auxiliary protrusion 126 is additionally configured and may have an even more curved surface. Therefore, the improvement in color viewing angle and light extraction efficiency can be further improved compared to Figure 5.

[0164] Figure 13 is another embodiment of Figure 12. Explanations that overlap with Figures 5, 6, and 12 are omitted.

[0165] Referring to Figure 13, an auxiliary projection 126 may be arranged on the third organic insulating layer 125. The cross-sectional shape of the auxiliary projection 126 may be semicircular. However, it is not limited to this, and the cross-sectional shape of the auxiliary projection 126 may be square, rectangular, semi-elliptical, or other polygonal. The auxiliary projection 126 may have an area even smaller than the area of ​​the projection 124 and the third organic insulating layer 125 corresponding to the auxiliary projection 126.

[0166] In the organic light-emitting element OLED formed along the auxiliary protrusion 126 and the curved surface of the third organic insulating layer 125, a large amount of light is scattered, which can improve the color viewing angle and light extraction efficiency. Compared to Figure 6, the auxiliary protrusion 126 is additionally configured and may have an even more curved surface. Therefore, the improvement in color viewing angle and light extraction efficiency can be further improved compared to Figure 6.

[0167] This disclosure is not limited to the embodiments described above. For example, a bumpy structure may be provided in a part of the light-emitting region, while a bumpy structure may not be provided in another part. For example, in a part of a protruding portion of an organic light-emitting device OLED, a protruding structure comprising only the third organic insulating layer 125 may be provided, and neither the third organic insulating layer 125 nor the protruding portion 124 may be provided. In this case, the protruding structure of the third organic insulating layer 125 is formed independently without the assistance of the protruding portion 124. For example, an auxiliary protruding portion 126 may be provided on top of some of the protruding structures of the third organic insulating layer 125, while an auxiliary protruding portion 126 may not be provided on top of some of the protruding structures of the third organic insulating layer 125. For example, the size (e.g., cross-sectional area and planar area) and shape (e.g., cross-sectional shape and planar shape) of the protruding structure of the third organic insulating layer 125 or the auxiliary protruding portion 126 may differ from each other in at least part.

[0168] The display devices described in the various embodiments of this specification can be described as follows.

[0169] According to one embodiment of the present disclosure, a display device is provided having a display area and a non-display area surrounding the display area, comprising a substrate, a first thin-film transistor and a second thin-film transistor disposed on the substrate, a light-emitting element disposed on the first thin-film transistor and the second thin-film transistor and including a first electrode, a light-emitting layer and a second electrode, and a sealing layer disposed on the light-emitting element, wherein the first electrode, the light-emitting layer and the second electrode are formed to have an uneven structure in at least a part of the light-emitting area.

[0170] According to one embodiment of the present disclosure, a first insulating layer is provided located below the first electrode, and the first insulating layer has an uneven structure corresponding to the uneven structure.

[0171] According to one embodiment of the present disclosure, the present invention further includes one or more protrusions disposed beneath the uneven structure of the first insulating layer.

[0172] According to one embodiment of the present disclosure, the taper of the first insulating layer is formed higher on the protrusion, and / or the thickness of the first insulating layer is formed thicker on the protrusion.

[0173] According to one embodiment of the present disclosure, the present invention further comprises an auxiliary protrusion, the auxiliary protrusion being located in the light-emitting region on the first insulating layer and below the first electrode, and overlapping with the protrusion.

[0174] According to one embodiment of the present disclosure, the radius of curvature in the thickness direction of the auxiliary protrusion is smaller than the radius of curvature in the thickness direction of the first insulating layer.

[0175] According to one embodiment of the present disclosure, the protrusion, the first insulating layer, and the first electrode are arranged on a second insulating layer, the display device further includes a first bank defining the light-emitting region, the first bank being arranged to cover the end of the first electrode and having a step relative to the second insulating layer, and the light-emitting layer being arranged on the first electrode and the first bank.

[0176] According to one embodiment of the present disclosure, the light-emitting layer is disposed on the first electrode, and the first bank, the second bank, and the spacer are disposed within a trench formed by the spacer and the second bank.

[0177] According to one embodiment of the present disclosure, the first bank is a black bank, and the second bank is a transparent bank.

[0178] According to one embodiment of the present disclosure, the first insulating layer is located beneath the first electrode and the first bank in a non-luminescent region and further includes a gradient region, the first electrode being located in the gradient region of the first insulating layer.

[0179] According to one embodiment of the present disclosure, the present invention further includes a connecting electrode disposed between the second insulating layer and a third insulating layer located beneath the second insulating layer.

[0180] According to one embodiment of the present disclosure, in a non-luminescent region, the first electrode and the second thin-film transistor are electrically connected via the second protrusion and the second protrusion, which is located below the first insulating layer and above the second insulating layer and penetrates the second insulating layer.

[0181] According to one embodiment of the present disclosure, the display device includes a third projection which is arranged in a non-display area and used as a signal line, wherein the third projection is provided in the same layer as one or more projections, is made of the same material as the one or more projections, and is connected to the connecting electrode.

[0182] According to one embodiment of the present disclosure, the multiple subpixels of the display device have different light-emitting areas, and the larger the light-emitting area of ​​the subpixel, the more protruding portions it contains.

[0183] According to one embodiment of the present disclosure, the planar shape of the projection is a square, circular, elliptical, cylindrical, or other polygon, and the cross-sectional shape of the projection is a rectangle, square, semicircular, semielliptical, or other polygon.

[0184] According to one embodiment of the present disclosure, the cross-sectional shape of the first insulating layer is semicircular, square, semielliptical, or other polygonal.

[0185] According to one embodiment of the present disclosure, the planar shape of the auxiliary projection is a square, circular, elliptical, cylindrical, or other polygon, and the cross-sectional shape of the auxiliary projection is a rectangle, square, semicircular, semielliptical, or other polygon.

[0186] According to one embodiment of the present disclosure, the present invention further includes a touch portion disposed on the sealing layer and a color filter disposed on the touch portion.

[0187] According to one embodiment of the present disclosure, a display device is provided having a display area and a non-display area surrounding the display area, comprising a substrate, a first thin-film transistor and a second thin-film transistor disposed on the substrate, a light-emitting element disposed on the first thin-film transistor and the second thin-film transistor and including a first electrode, a light-emitting layer and a second electrode, and a sealing layer disposed on the light-emitting element, wherein the first electrode, the light-emitting layer and the second electrode are formed to have one or more protrusions projecting toward the front surface of the display device opposite to the substrate in at least a part of the light-emitting area.

[0188] According to one embodiment of the present disclosure, the protruding structure formed by the first insulating layer and the protruding element covered by the first insulating layer are arranged below each of the one or more protruding portions.

[0189] According to one embodiment of the present disclosure, when a plurality of the protrusions are provided in the light-emitting region, the plurality of protruding structures are spaced apart from each other, and the plurality of protruding elements are spaced apart from each other.

[0190] According to one embodiment of the present disclosure, the present invention further comprises an auxiliary projection, the auxiliary projection being located in the light-emitting region on the first insulating layer and below the first electrode, and overlapping with the projection element.

[0191] According to one embodiment of the present disclosure, the area of ​​the auxiliary protrusion is smaller than the area of ​​the protruding structure and the protruding element, respectively.

[0192] According to one embodiment of the present disclosure, the first insulating layer is positioned beneath the first electrode in a non-luminescent region and further includes a gradient region, the first electrode being positioned in the gradient region of the first insulating layer.

[0193] According to one embodiment of the present disclosure, a connecting electrode is further provided, which is disposed between a second insulating layer on which a protruding element is formed and a third insulating layer below the second insulating layer.

[0194] According to one embodiment of the present disclosure, the display device further includes a third projection disposed in the non-display area and used as a signal line, wherein the third projection is provided in the same layer as the projection element, is made of the same material as the projection element, and is connected to the connecting electrode.

[0195] According to one embodiment of the present disclosure, the present invention further includes a touch portion disposed on the sealing layer and a color filter disposed on the touch portion.

[0196] While this disclosure has been shown and described, particularly with reference to its embodiments, those skilled in the art will understand that various modifications in form and detail are possible without departing from the spirit and scope of this disclosure as defined in the following claims. [Explanation of Symbols]

[0197] 1 Display device 100 Display Panels DA display area NDA Hidden Area PX pixels

Claims

1. A display device having a display area and a non-display area surrounding the display area, circuit board and A first thin-film transistor and a second thin-film transistor are arranged on the substrate, A light-emitting element, comprising a first electrode, a light-emitting layer, and a second electrode, is disposed on the first thin-film transistor and the second thin-film transistor. The light-emitting element comprises a sealing layer disposed on the light-emitting element, A display device in which the first electrode, the light-emitting layer, and the second electrode are formed to have an uneven structure in at least a portion of the light-emitting region.

2. The display device according to claim 1, further comprising a first insulating layer disposed below the first electrode, wherein the first insulating layer has an uneven structure corresponding to the uneven structure.

3. The display device according to claim 2, further comprising one or more protrusions disposed beneath the uneven structure of the first insulating layer.

4. The display device according to claim 3, wherein the taper of the first insulating layer is formed higher on the protrusion, and / or the thickness of the first insulating layer is formed thicker on the protrusion.

5. The display device according to claim 3, further comprising an auxiliary protrusion, wherein the auxiliary protrusion is positioned in the light-emitting region on the first insulating layer and below the first electrode, and overlaps with the protrusion.

6. The display device according to claim 5, wherein the radius of curvature in the thickness direction of the auxiliary protrusion is smaller than the radius of curvature in the thickness direction of the first insulating layer.

7. The protruding portion, the first insulating layer, and the first electrode are arranged on the second insulating layer. The display device further includes a first bank defining the light-emitting region, the first bank being arranged to cover the end of the first electrode and having a step relative to the second insulating layer. The display device according to claim 3 or 5, wherein the light-emitting layer is arranged on the first electrode and the first bank.

8. The system comprises a second bank positioned on the first bank and a spacer positioned on the second bank, The display device according to claim 7, wherein the light-emitting layer is disposed on the first electrode, and the first bank, the second bank, and the spacer are disposed in a trench formed by the spacer and the second bank.

9. The display device according to claim 8, wherein the first bank is a black bank and the second bank is a transparent bank.

10. The display device according to claim 7, wherein the first insulating layer is disposed below the first electrode and the first bank in a non-emitting region and further includes a sloped region, and the first electrode is disposed in the sloped region of the first insulating layer.

11. The display device according to claim 7, further comprising a connecting electrode disposed between the second insulating layer and a third insulating layer below the second insulating layer.

12. In the non-luminescent region, the second projection is located below the first insulating layer and above the second insulating layer, and penetrates the second insulating layer. The display device according to claim 11, wherein the first electrode and the second thin-film transistor are electrically connected via the second protrusion and the connecting electrode.

13. The display device according to claim 11, comprising a third projection disposed in a non-display area of ​​the display device and used as a signal line, wherein the third projection is provided in the same layer as one or more projections, is made of the same material as one or more projections, and is connected to the connecting electrode.

14. The display device according to claim 3, wherein the plurality of subpixels of the display device have different light-emitting areas, and the subpixels with larger light-emitting areas include more of the protruding portions.

15. The planar shape of the aforementioned protrusion is a square, circle, ellipse, cylinder, or other polygon. The display device according to claim 3, wherein the cross-sectional shape of the protruding portion is rectangular, square, semicircular, semielliptical, or other polygonal.

16. The display device according to claim 2, wherein the cross-sectional shape of the first insulating layer is a semicircle, a square, a semiellipse, or another polygon.

17. The planar shape of the auxiliary projection is a square, circle, ellipse, cylinder, or other polygon. The display device according to claim 5, wherein the cross-sectional shape of the auxiliary projection is rectangular, square, semicircular, semielliptical, or other polygonal.

18. The display device according to claim 1, further comprising a touch portion disposed on the sealing layer and a color filter disposed on the touch portion.

19. A display device having a display area and a non-display area surrounding the display area, circuit board and A first thin-film transistor and a second thin-film transistor are arranged on the substrate, A light-emitting element, comprising a first electrode, a light-emitting layer, and a second electrode, is disposed on the first thin-film transistor and the second thin-film transistor. The light-emitting element comprises a sealing layer disposed on the light-emitting element, A display device in which the first electrode, the light-emitting layer, and the second electrode are formed to have one or more protrusions projecting toward the front surface of the display device opposite to the substrate in at least a portion of the light-emitting region.

20. The display device according to claim 19, wherein the protruding structure formed by the first insulating layer and the protruding element covered by the first insulating layer are arranged below each of the one or more protruding portions.

21. The display device according to claim 20, wherein when a plurality of the protrusions are provided in the light-emitting region, the plurality of the protruding structures are spaced apart from each other, and the plurality of the protruding elements are spaced apart from each other.

22. The display device according to claim 20, further comprising an auxiliary protrusion, wherein the auxiliary protrusion is positioned in the light-emitting region on the first insulating layer and below the first electrode, and overlaps with the protruding element.

23. The display device according to claim 22, wherein the area of ​​the auxiliary protrusion is smaller than the area of ​​the protruding structure and the protruding element, respectively.

24. The display device according to claim 20, wherein the first insulating layer is disposed beneath the first electrode in a non-emitting region and further includes a sloped region, and the first electrode is disposed in the sloped region of the first insulating layer.

25. The display device according to claim 20, further comprising a connecting electrode disposed between a second insulating layer on which a protruding element is formed and a third insulating layer below the second insulating layer.

26. The display device according to claim 25, further comprising a third projection disposed in the non-display area of ​​the display device and used as a signal line, wherein the third projection is provided in the same layer as the projection element, is made of the same material as the projection element, and is connected to the connecting electrode.

27. The display device according to claim 19, further comprising a touch portion disposed on the sealing layer and a color filter disposed on the touch portion.

Images