System for controlling plasma density distribution profiles including multi-RF zoned substrate supports

Abstract

This invention provides a substrate processing system for controlling the plasma density distribution profile within a processing chamber. [Solution] The substrate processing system includes a substrate support, N RF sources, and a controller. The substrate support is placed in a processing chamber and supports a substrate on its upper surface, and includes a base plate made of a conductive material and M electrodes provided in the base plate. Each of the N RF sources supplies its respective RF signal to one or more of the M electrodes (where M and N are integers of 2 or more), and each RF signal is supplied to different sets of the M electrodes, each set containing one or more different electrodes from the M electrodes. The controller controls the plasma in the processing chamber by causing one or more coils to strike and maintain plasma in the processing chamber independently of the N RF sources, and by individually controlling the voltage output of the N RF sources.

Description

[Technical Field]

[0001] [Cross-reference of related applications] This application claims the benefit of U.S. Provisional Application No. 63 / 092,948, filed on 16 October 2020. The entire disclosure of the above application is incorporated herein by reference.

[0002] This disclosure relates to a system for controlling the plasma density distribution profile within a processing chamber. [Background technology]

[0003] The background information provided herein is intended to give a general overview of the contents of this disclosure. The research conducted by the inventors named herein, to the extent described in this background information section, is not considered prior art, either explicitly or implicitly, to compete with this disclosure, just as any description that would not be considered prior art at the time of filing is not considered prior art.

[0004] In the manufacturing of semiconductor devices, etching and deposition processes are carried out in a processing chamber. By introducing an ionized gas, or plasma, into the processing chamber, material is etched (or removed) from a substrate such as a semiconductor wafer, and material is sputtered or deposited onto the substrate. The substrate is placed in the processing chamber on a substrate support such as an electrostatic chuck or pedestal. Generating plasma for use in the manufacturing or assembly process typically begins with introducing a process gas into the processing chamber. Next, the gas molecules in the processing chamber are excited to generate plasma.

[0005] The processing chamber may include a transformer-coupled plasma (TCP) reactor coil. A radio frequency (RF) signal generated by the power supply is supplied to the TCP reactor coil. The TCP reactor coil is driven by a transformer-coupled capacitive tuning (TCCT) matching network. The TCCT matching network receives the RF signal supplied from the power supply and enables tuning of the power supplied to the TCP reactor coil. A dielectric window made of a material such as ceramic is built into the top surface of the processing chamber. The dielectric window allows the RF signal to be transmitted from the TCP reactor coil into the interior of the processing chamber. The RF signal excites gas molecules in the processing chamber, generating plasma. [Overview of the Initiative]

[0006] A substrate processing system is provided, comprising a substrate support, N RF sources, and a controller. The substrate support is placed within a processing chamber and configured to support a substrate on its upper surface, and includes a base plate made of a conductive material and M electrodes (where M is an integer greater than or equal to 2) provided within the base plate. Each of the N RF sources is configured to supply its respective RF signal to one or more of the M electrodes (where M and N are integers greater than or equal to 2), and each RF signal is supplied to a different set of the M electrodes, each set comprising one or more different electrodes from the M electrodes. The controller is configured to cause one or more coils to strike and maintain plasma within the processing chamber independently of the N RF sources, and to regulate the plasma within the processing chamber by individually controlling the voltage output of the N RF sources.

[0007] In other characteristics, M is greater than or equal to N. In other characteristics, N is greater than or equal to M.

[0008] In other features, the controller is configured to do at least one of the following: select which one or more of the N RF sources provide one or more of their respective RF signals to one of the M electrodes, or for each set of M electrodes, select which one or more of the N RF sources provide one or more of their respective RF signals to that set of M electrodes. In other features, M is greater than or equal to N.

[0009] In other features, the substrate processing system further includes N cavities located on the upper surface of the base plate, with M electrodes arranged within the N cavities. In other features, the M electrodes are embedded in a dielectric material located within the N cavities.

[0010] In other features, the substrate processing system further includes N cavities located on the upper surface of the base plate, with M electrodes arranged within the N cavities. In other features, the M electrodes are embedded in a dielectric material located within the N cavities.

[0011] In other features, the substrate processing system further includes N cavities located on the upper surface of a base plate, each containing M electrodes, and M dielectric separators (where M is 1 or greater) placed between the M electrodes and the substrate.

[0012] Other features include a substrate processing system further comprising a dielectric layer placed between M electrodes and a base plate. Other features include N RF signals whose frequencies are the same as those used to generate plasma. Other features include N RF signals whose frequencies are different from those used to generate plasma.

[0013] Other features include a substrate processing system further comprising a processing chamber in which one or more coils include an inner coil and an outer coil, the inner coil being located outside the processing chamber adjacent to the window of the processing chamber, and the outer coil being located outside the processing chamber adjacent to the window, radially outward from the inner coil, and an RF source configured to supply power to the inner coil and the outer coil. A controller is further configured to control the RF source to adjust the current supplied to the inner coil relative to the current supplied to the outer coil.

[0014] Other features include a controller configured to control the RF source to either supply more current to the outer coil than to the inner coil, or to supply more current to the inner coil than to the outer coil. Other features further include a substrate processing system that includes an RF source configured to supply a bias voltage to the base plate.

[0015] In other features, at least one of the N RF signals has a different frequency from at least one other of the N RF signals. In other features, the N RF signals have the same frequency. In other features, the substrate processing system further includes N matching networks arranged between the N RF sources and the M electrodes.

[0016] Other features include a substrate processing system comprising a substrate support, N radio frequency (RF) sources, and a controller. The substrate support is located within a processing chamber and is configured to support a substrate on its upper surface, and includes a base plate made of a conductive material and N electrodes (where N is an integer greater than or equal to 2) provided within the base plate. The N RF sources are configured to supply N RF signals to each of the N electrodes. The controller is configured to strike and maintain plasma within the processing chamber independently of the N RF sources and to regulate the plasma within the processing chamber by individually controlling the voltage output of the N RF sources.

[0017] Other features include a substrate processing system comprising a processing chamber, a substrate support, an inner coil, an outer coil, N RF sources, N matching networks, and a controller. The processing chamber includes a window. The substrate support is located inside the processing chamber and is configured to support a substrate on its upper surface, and includes a base plate and M electrodes (where M is an integer greater than or equal to 2) provided within the base plate. The inner coil is located outside the processing chamber, adjacent to the window. The outer coil is located outside the processing chamber, adjacent to the window, radially outward from the inner coil, and spaced apart from the inner coil. Each of the N RF sources (where N is an integer greater than or equal to 2) is configured to supply its respective RF signal to one or more of the M electrodes, each RF signal being supplied to a different set of the M electrodes, each set containing one or more different electrodes. N matching networks are located between the N RF sources and the M electrodes. The controller is configured to strike the plasma by supplying RF power to the inner and outer coils, and to change the plasma density distribution profile within the processing chamber by (i) varying the power supplied to the inner coil with respect to the outer coil, and (ii) varying the power supplied to at least one of the M electrodes with respect to at least one of the M electrodes.

[0018] In other characteristics, M is greater than or equal to N. In other characteristics, N is greater than or equal to M.

[0019] In other features, the controller is configured to do at least one of the following: select which one or more of the N RF sources provide one or more of their respective RF signals to one of the M electrodes, or for each set of M electrodes, select which one or more of the N RF sources provide one or more of their respective RF signals to that set of M electrodes. In other features, M is greater than or equal to N.

[0020] In other features, the substrate processing system further includes N cavities located on the upper surface of the base plate, and M electrodes are disposed within the N cavities. In other features, the M electrodes are embedded in a dielectric material located within the N cavities.

[0021] In other features, the substrate processing system further includes N cavities located on the upper surface of the base plate, and M electrodes are disposed within the N cavities. In other features, the M electrodes are embedded in a dielectric material located within the N cavities.

[0022] In other features, the substrate processing system further includes N cavities located on the upper surface of the base plate where M electrodes are disposed, and M (M is greater than or equal to 1) dielectric separators disposed between the M electrodes and the substrate.

[0023] In other features, the substrate processing system further includes a dielectric layer disposed between the M electrodes and the base plate. In other features, the frequencies of the N RF signals are the same as the frequencies used to generate plasma.

[0024] In other features, the frequencies of the N RF signals are different from the frequencies used to generate plasma. In other features, the substrate processing system further includes a matching network connected between the RF source and the inner coil and the outer coil.

[0025] In other features, the controller is configured to control the RF source to supply more current to the outer coil than to the inner coil. In other features, the substrate processing system further includes an RF source configured to supply a bias voltage to the base plate.

[0026] In other features, at least one of the N RF signals has a different frequency from at least another one of the N RF signals. In other features, the N RF signals have the same frequency.

[0027] In other features, the M electrodes include a first electrode and a second electrode. The controller is configured to control the supply of RF signals such that a first amount of power is supplied to the inner coil and a second amount of power is supplied to the outer coil, such that the first amount of power is different from the second amount of power, and a first RF voltage is supplied to the first electrode and a second RF voltage is supplied to the second electrode, such that the first RF voltage is greater than the second RF voltage.

[0028] In other features, the first electrode is positioned radially inward of the second electrode on the base plate and receives a higher RF voltage than the second electrode. In other features, the first electrode is positioned radially outward of the second electrode on the base plate and receives a higher RF voltage than the second electrode.

[0029] In other features, the M electrodes include a first set of electrodes and a second set of electrodes. The first set of electrodes corresponds to a first RF area. The second set of electrodes corresponds to a second RF area. The second RF area is located radially inward from the first RF area.

[0030] In other features, M electrodes are provided in a plane parallel to and offset from the upper surface of the substrate support. In other features, M electrodes are provided in separate layers of the base plate.

[0031] Other features include a controller that controls N RF signals to adjust the plasma, thereby enhancing plasma uniformity during the transient startup of the N RF sources. Another feature is that one or more of the M electrodes also function as heating elements.

[0032] Other features include a substrate processing system comprising a processing chamber, a substrate support, an inner coil, an outer coil, N RF sources, N matching networks, and a controller. The processing chamber includes a window. The substrate support is located inside the processing chamber and configured to support a substrate on its upper surface, and includes a base plate and N electrodes (where N is an integer greater than or equal to 2) provided within the base plate. The inner coil is located outside the processing chamber, adjacent to the window. The outer coil is located outside the processing chamber, adjacent to the window, and radially outward from the inner coil. The N RF sources are configured to supply N RF signals. The N matching networks are located between the N RF sources and the N electrodes. The controller is configured to strike the plasma by supplying RF power to the inner and outer coils, and to change the plasma density distribution profile within the processing chamber by (i) varying the power supplied to the inner coil with respect to the outer coil, and (ii) varying the power supplied to at least one of the N electrodes with respect to at least one other of the N electrodes.

[0033] Other features include a substrate processing system comprising a processing chamber, a substrate support, an inner coil, an outer coil, N RF sources, N matching networks, and a controller. The processing chamber includes a window. The substrate support is located inside the processing chamber and is configured to support a substrate on its upper surface, and includes a base plate and a dielectric layer located above the base plate, on which M (M is an integer greater than or equal to 2) electrodes are provided. The inner coil is located outside the processing chamber, adjacent to the window. The outer coil is located outside the processing chamber, adjacent to the window, and radially outward from the inner coil. Each of the N (N is an integer greater than or equal to 2) RF sources is configured to supply its respective RF signal to one or more of the M electrodes, each RF signal being supplied to a different set of the M electrodes, each set containing one or more of the M electrodes. N matching networks are located between the N RF sources and the M electrodes. The controller is configured to strike the plasma by supplying RF power to the inner and outer coils, and to change the plasma density distribution profile within the processing chamber by (i) varying the power supplied to the inner coil relative to the outer coil, and (ii) varying the power supplied to at least one of the M electrodes relative to the power supplied to at least one of the M electrodes.

[0034] In other characteristics, M is greater than or equal to N. In other characteristics, N is greater than or equal to M.

[0035] In other features, the controller is configured to do at least one of the following: select which one or more of the N RF sources provide one or more of their respective RF signals to one of the M electrodes, or for each set of M electrodes, select which one or more of the N RF sources provide one or more of their respective RF signals to that set of M electrodes. In other features, M is greater than or equal to N.

[0036] In other features, the substrate processing system further includes N cavities located on the upper surface of the base plate, with M electrodes arranged within the N cavities. In other features, the M electrodes are embedded in a dielectric material located within the N cavities.

[0037] In other characteristics, the frequencies of the N RF signals are the same as the frequencies used to generate the plasma. In other characteristics, the frequencies of the N RF signals are different from the frequencies used to generate the plasma.

[0038] Other features include a substrate processing system further comprising an RF source and a matching network connected between the inner and outer coils. Other features include a controller configured to control the RF source to supply more current to the outer coil than to the inner coil. Other features include a substrate processing system further comprising an RF source configured to supply a bias voltage to the base plate.

[0039] In other features, at least one of the N RF signals has a different frequency from at least one other of the N RF signals. In other features, the N RF signals have the same frequency.

[0040] In other features, the M electrodes include a first electrode and a second electrode. The controller is configured to control the supply of RF signals such that a first amount of power is supplied to the inner coil and a second amount of power is supplied to the outer coil, such that the first amount of power is different from the second amount of power, and a first RF voltage is supplied to the first electrode and a second RF voltage is supplied to the second electrode, such that the first RF voltage is greater than the second RF voltage.

[0041] In other features, the first electrode is positioned radially inward of the second electrode on the base plate and receives a higher RF voltage than the second electrode. In other features, the first electrode is positioned radially outward of the second electrode on the base plate and receives a higher RF voltage than the second electrode.

[0042] In other features, the M electrodes include a first set of electrodes and a second set of electrodes. The first set of electrodes corresponds to a first RF area. The second set of electrodes corresponds to a second RF area. The second RF area is located radially inward from the first RF area.

[0043] In other features, M electrodes are provided in the dielectric layer in a plane parallel to and below the upper surface of the substrate support. In other features, M electrodes are provided in separate layers of the base plate.

[0044] Other features include a controller that controls N RF signals to adjust the plasma, thereby enhancing plasma uniformity during the transient startup of the N RF sources. Another feature is that one or more of the M electrodes also function as heating elements.

[0045] Other features include a substrate processing system comprising a processing chamber, a substrate support, an inner coil, an outer coil, N RF sources, N matching networks, and a controller. The processing chamber includes a window. The substrate support is located inside the processing chamber and configured to support a substrate on its upper surface, and includes a base plate and a dielectric layer located above the base plate, on which N electrodes (N is an integer greater than or equal to 2) are provided. The inner coil is located outside the processing chamber, adjacent to the window. The outer coil is located outside the processing chamber, adjacent to the window, and radially outward from the inner coil. The N radio frequency (RF) sources are configured to supply N RF signals. The N matching networks are located between the N RF sources and the N electrodes. The controller is configured to strike the plasma by supplying RF power to the inner and outer coils, and to change the plasma density distribution profile within the processing chamber by (i) varying the power supplied to the inner coil relative to the outer coil, and (ii) varying the power supplied to at least one of the N electrodes relative to the power supplied to at least one of the N electrodes.

[0046] Further applicable areas of this disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. [Brief explanation of the drawing]

[0047] This disclosure will be better understood from the detailed description and accompanying drawings.

[0048] [Figure 1] Figure 1 shows the ion incidence angle to the plasma sheath above the surface of the substrate.

[0049] [Figure 2] Figure 2 is a functional block diagram of a first part of an exemplary substrate processing system, including a plasma density profile control system according to the present disclosure.

[0050] [Figure 3] Figure 3 is a functional block diagram of the second part of the substrate processing system shown in Figure 2.

[0051] [Figure 4] Figure 4 is a functional block diagram of a portion of another substrate processing system, including the plasma density profile control system according to this disclosure.

[0052] [Figure 5] Figure 5 is a cross-sectional view of an example of a portion of a substrate support containing a radio frequency (RF) circuit having multiple RF regions according to the present disclosure.

[0053] [Figure 6] Figure 6 is a schematic diagram of the RF circuit in a portion of the substrate support shown in Figure 5.

[0054] [Figure 7] Figure 7 is an exemplary plot of ion flux and plasma density against substrate radius for a substrate support without RF electrodes.

[0055] [Figure 8] Figure 8 is an exemplary plot of ion flux versus substrate radius for the substrate support of Figure 5, in accordance with this disclosure, where the radially inner region receives a higher RF voltage than the radially outer region.

[0056] [Figure 9] Figure 9 is an exemplary plot of ion flux versus substrate radius for the substrate support of Figure 5, in accordance with this disclosure, where the radially outer region receives a higher RF voltage than the radially inner region.

[0057] [Figure 10A] Figure 10A is an exemplary plot of energy versus ion diffusion angle for two RF regions in accordance with this disclosure, where the radially inner region receives a higher RF voltage than the radially outer region. [Figure 10B] Figure 10B is an exemplary plot of energy versus ion diffusion angle for two RF regions in accordance with this disclosure, where the radially inner region receives a higher RF voltage than the radially outer region.

[0058] [Figure 11A] Figure 11A is an exemplary plot of energy versus ion diffusion angle for two RF regions in accordance with this disclosure, where the radially outer region receives a higher RF voltage than the radially inner region. [Figure 11B] Figure 11B is an exemplary plot of energy versus ion diffusion angle for two RF regions in accordance with this disclosure, where the radially outer region receives a higher RF voltage than the radially inner region.

[0059] [Figure 12] Figure 12 is a cross-sectional view of an example portion of a substrate support that includes an RF circuit having multiple RF regions, including a bias RF region, in accordance with the present disclosure.

[0060] [Figure 13]Figure 13 is a schematic diagram of the RF circuit in a portion of the substrate support shown in Figure 12.

[0061] [Figure 14] Figure 14 is a cross-sectional view of an example of a portion of a substrate support that includes an RF circuit having a plurality of RF regions, including a bias RF region and a dielectric layer, in accordance with the present disclosure.

[0062] [Figure 15] Figure 15 is a schematic diagram of the RF circuit in a portion of the substrate support shown in Figure 14.

[0063] [Figure 16] Figure 16 is an exemplary plot of ion flux versus substrate radius for the substrate support shown in Figure 14.

[0064] [Figure 17] Figure 17 is a cross-sectional view of an example of a portion of a substrate support that includes an RF circuit having multiple RF regions having a dielectric layer and no bias RF electrode, in accordance with the present disclosure.

[0065] [Figure 18] Figure 18 is a schematic diagram of the RF circuit in a portion of the substrate support shown in Figure 17.

[0066] [Figure 19] Figure 19 is an exemplary plot of ion flux versus substrate radius for the substrate support in Figure 17.

[0067] [Figure 20A] Figure 20A is an exemplary plot of energy versus ion diffusion angles for two RF regions provided by the substrate support of Figure 14, as disclosed herein. [Figure 20B] Figure 20B is an exemplary plot of energy versus ion diffusion angles for two RF regions provided by the substrate support of Figure 14, as disclosed herein.

[0068] [Figure 21A]Figure 21A is an exemplary plot of energy versus ion diffusion angles for two RF regions provided by the substrate support of Figure 17, as disclosed herein. [Figure 21B] Figure 21B is an exemplary plot of energy versus ion diffusion angles for two RF regions provided by the substrate support of Figure 17, as disclosed herein.

[0069] [Figure 22] Figure 22 is a side view of a substrate feature, showing the perpendicular angle incidence of ions and the aspect ratio parameters.

[0070] [Figure 23] Figure 23 is a side view of a feature formed by acute-angle ion incidence.

[0071] [Figure 24A] Figure 24A is an exemplary plot of energy versus ion diffusion angles for two RF regions provided by the substrate support of Figure 17, in accordance with this disclosure, where the central potential is significantly higher than the edge potential. [Figure 24B] Figure 24B is an exemplary plot of energy versus ion diffusion angles for two RF regions provided by the substrate support of Figure 17, in accordance with this disclosure, where the central potential is significantly higher than the edge potential.

[0072] [Figure 25] Figure 25 is an exemplary plot of ion flux versus substrate radius for the substrate support of Figure 17, in accordance with this disclosure, where the central potential is significantly higher than the edge potential.

[0073] [Figure 26] Figure 26 is a top view of the base plate of a substrate support including RF electrodes arranged in multiple RF regions, in accordance with this disclosure.

[0074] [Figure 27]Figure 27 is a cross-sectional view of an example of a portion of a substrate support containing multiple layers of RF electrodes for multiple RF regions, in accordance with this disclosure.

[0075] [Figure 28] Figure 28 shows a method for adjusting etching rate uniformity according to one embodiment of the present disclosure.

[0076] In drawings, reference numbers may be reused to identify similar and / or identical elements. [Modes for carrying out the invention]

[0077] Figure 1 shows the ion incidence angle Φ with respect to a plane 100 extending perpendicularly to the top surface 102 of the substrate 104. The substrate 104 is mounted on a substrate support 106 and may receive a bias voltage represented by a voltage source 108. Plasma 110 is generated above the substrate 104. An electron-deficient region 112 exists between the plasma 110 and the substrate 104 and is called the plasma sheath. The plasma sheath has a thickness s. The plasma density is proportional to the reciprocal of the square root of the thickness s.

[0078] For vertical, untitled, or directional etching of a substrate, the ion flow should be parallel to plane 100 and / or perpendicular to top surface 102, as indicated by arrow 120. However, due to plasma non-uniformity that creates a non-uniform sheath, and because ions collide perpendicularly with the sheath, such a non-uniform sheath or density can cause the ion tilt angle to reach several degrees. This is indicated by arrow 124, which can result in features (e.g., holes, trenches, etc.) being tilted and etched at an acute angle rather than 90° relative to surface 102. Strict requirements may include operation at ion incidence or tilt angles (or tilt angles) less than 0.02°.

[0079] The ion gradient angle (a result of plasma density and sheath heterogeneity) is directly related to the etching rate heterogeneity. The ion heterogeneity is given by Equation 1 (wherein ionnonuni As expressed by (where is ionic heterogeneity), it can be estimated as the difference between the maximum ion flux and the minimum ion flux divided by the maximum ion flux. Ionic heterogeneity is etch rate heterogeneity ER nonuni It is proportional to.

number

[0080] In attempts to improve plasma uniformity and minimize ion tilt angle, various parameters may be adjusted. For example, a transformer-coupled plasma (TCP) system may include an inner and outer reactor coil located above the TCP window. Etching rate and plasma uniformity can be improved by adjusting the size, position, and amount of current supplied to the reactor coils. The size of the chamber in which the inner and outer reactor coils are located may be increased to allow for the implementation of larger reactor coils and / or increased distance between them. Another adjustable parameter is the ratio of the amount of current supplied to the inner reactor coil to the amount of current supplied to the outer reactor coil. Adjusting these parameters can improve etching rate uniformity to a limited extent. For example, adjusting these parameters may improve plasma heterogeneity to a low of 5-10%, but this may not meet the requirement of generating a highly uniform plasma capable of providing a tilt angle of less than 0.02 degrees.

[0081] As the size requirements for substrate features decrease and the resolution and aspect ratio requirements increase, existing processing systems are becoming increasingly difficult to meet. Some feature size requirements can be as small as 10 nanometers.

[0082] Examples described herein include a plasma density profile control system having a substrate support (e.g., an electrostatic chuck) having a plurality of RF electrodes. RF power to the RF electrodes is controlled to provide a plurality of RF regions for improving etching rate uniformity across the substrate. The substrate support includes RF electrodes used to provide each RF region. The RF electrodes are provided in separate arrangements having corresponding patterns. In some embodiments, the RF electrodes are in the same plane and / or layer of the substrate support. In other embodiments, the RF electrodes are in separate planes and / or layers and may overlap horizontally. Some embodiments include one or more dielectric layers and / or dielectric separators separating the RF electrodes from the substrate. The dielectric separators may be provided in a pattern similar to the pattern of the corresponding RF electrodes.

[0083] The disclosed RF electrodes, dielectric layers, and dielectric separators are implemented to improve and minimize ion angle gradient and plasma non-uniformity. This includes controlling the RF voltage supplied to the RF electrodes. Improved plasma uniformity may be provided during the initial transient period when processing is initiated and / or after the transient period when the RF voltage across the entire substrate is not in a steady state. As an example, the initial transient period may last 200–900 milliseconds (ms) after the RF voltage is first supplied to the RF electrodes. In some embodiments, the RF electrode voltage is set to decrease the ion gradient angle, while in other embodiments, the RF electrode voltage is set to maintain or increase the ion gradient angle.

[0084] Figure 2 shows a first portion 200 of an exemplary substrate processing system including a plasma density profile control system 202. An exemplary remaining portion of the substrate processing system is shown in Figure 2. The substrate processing system includes a processing chamber 204. A substrate support 205 is provided at least partially within the processing chamber 204 and configured to hold a substrate 206. The plasma density profile control system 202 includes the substrate support 205, matching networks 207, 208, 210, RF generators 212, 214, 216, and a controller 220. The controller 220 controls the generators 212, 214, 216 to generate RF voltages at RF electrodes 230, 232, 234, 236, 238 via the matching networks 207, 208, 210. The RF electrodes 230, 232, 234, 236, 238 are mounted within the substrate support 205. Figure 2 shows an example of the RF electrode arrangement. Other configurations are shown in Figures 4, 5, 12, 14, 17, 26, and 27.

[0085] The substrate processing system further includes a TCP reactor coil 240 provided on a plenum 242 located above the dielectric window 244. The plenum 242 may include a plurality of circular concave regions (or channels) 246 on which the TCP reactor coil 240 (e.g., an inner coil set and an outer coil set) is provided. A first power supply 248 provides a first RF source signal to a transformer-coupled capacitive tuning (TCCT) matching network 250. The TCCT (or first) matching network 250 is provided between the first power supply 248 and the TCP reactor coil 240. The TCCT matching network 250 enables tuning of the power supplied to the TCP reactor coil 240. An example of a TCP reactor coil and a TCCT matching network is shown in U.S. Patent No. 10,297,422, which is incorporated herein by reference.

[0086] The dielectric window 244 is located adjacent to the plenum 242 and above the pinnacle 252 (Pinnacle is a registered trademark), enabling efficient transmission of a first RF source signal to the processing chamber 204 for plasma generation. The pinnacle may refer to the upper liner of the processing chamber and may be configured to support the dielectric window. A substrate support 205 is provided at the bottom of the processing chamber 204. The substrate support 205 supports the substrate 206. If the substrate support 205 is an electrostatic chuck, the substrate support 205 includes one or more clamp electrodes 254. In one embodiment, the substrate support 205 is formed from a conductive material such as aluminum. In another embodiment, the substrate support is formed from a non-conductive material such as ceramic.

[0087] The substrate support 205 (or a part thereof) may be capacitively coupled to the substrate 206. The clamp voltage may be supplied to the clamp electrode 254 by a power supply 255 controlled by the controller 220. By applying a DC voltage to the clamp electrode 254, electrostatic coupling occurs between the substrate support 205 and the substrate 206. This electrostatic coupling causes the substrate 206 to be attracted to the substrate support 205.

[0088] As an example, one of the RF generators 212, 214, and 216 may also be a bias RF power supply, which may provide a bias voltage to one or more corresponding RF electrodes 230, 232, 234, 236, and 238. Each of the RF generators 212, 214, and 216 may be connected to one or more electrodes to supply a bias voltage. Five electrodes are shown in Figure 2, but a different number of electrodes may be included. One example in which each RF generator supplies a bias voltage to multiple electrodes is shown and explained with respect to Figure 26. A pair of RF generators and a matching network (or RF source) may supply an RF signal to a different set of electrodes than other pairs of RF generators and matching network. In another embodiment, a first pair of RF generators and a matching network supplies a first RF signal to a first set of one or more electrodes, and a second pair of RF generators and a matching network supplies a second RF signal to the same set of one or more electrodes. In one embodiment, the substrate support 205 has the same number of RF generator-matching network pairs (or RF sources) as there are sets of electrodes, with each set of electrodes containing one or more electrodes. In another embodiment, there are different (more or less) sets of RF generator-matching network pairs (or RF sources) than there are sets of electrodes. The controller 220 can control which electrodes and how many electrodes each pair of RF generator-matching network powers. This can be achieved using a switching network included between the matching network and the electrodes.

[0089] As an example, the switching network may be included in the matching, tuning, and distribution network 442 in Figure 4. The RF generator may operate at different frequencies and / or implement separate pulse schemes having different pulse times and / or patterns when generating RF signals. This may be controlled by the controller 220, which may select the RF frequency and / or pulse pattern for each of the generated RF signals.

[0090] Electrodes 230, 232, 234, 236, and 238 may be provided in cavities not shown in Figure 2 but shown, for example, in Figures 5, 12, 14, 17, and 27. Plane 239 may extend laterally through RF electrodes 230, 232, 234, 236, and 238. In one embodiment, RF electrode 234 receives a bias RF voltage from a second matching network 208. Matching networks 207, 208, and 210 match the impedance of generators 212, 214, and 216 (e.g., 50 Ω) to the impedance of the substrate support 205 and plasma 260 in the processing chamber 204 as seen from matching networks 207, 208, and 210. Electrodes 230, 232, 234, 236, and 238 may be encased in dielectric material referred to as covers 262, 264, 266, 268, and 270. In another embodiment, electrodes 230, 232, 234, 236, and 238 are not encased in dielectric material. The controller 220 can control the voltage and / or current outputs of RF generators 212, 214, and 216, as well as the parameter settings of matching networks 207, 208, and 210 (e.g., impedance of circuit elements).

[0091] During operation, an ionizable gas flows into the processing chamber 204 through the gas inlet 271 and exits the processing chamber 204 through the gas outlet 272. A first RF signal is generated by the RF power supply 248 and sent to the TCP reactor coil 240. The first RF signal is radiated from the TCP reactor coil 240 through the dielectric window 244 into the processing chamber 204. This ionizes the gas in the processing chamber 204, forming a plasma 260. The plasma 260 generates a plasma sheath 274 along the walls of the processing chamber 204. The plasma 260 contains electrons and positively charged ions. Electrons, being much lighter than positively charged ions, tend to move more easily, generating a DC bias voltage and DC sheath potential on the inner surface of the processing chamber 204. The average DC bias voltage and DC sheath potential on the substrate 206 affect the energy at which positively charged ions collide with the substrate 206. This energy affects processing characteristics such as the rate at which etching or deposition occurs.

[0092] The controller 220 may change the amount of DC bias and / or DC sheath potential at the substrate 206 by, for example, adjusting the bias RF signal generated by the second RF generator 214. The bias RF voltage may be supplied to an electrode different from the RF electrode 234. The controller 220 may also adjust the RF voltage supplied to the RF electrodes 230, 232, 234, 236, and 238 to control the plasma density distribution profile above the substrate 206, thereby controlling the etching rate uniformity across the substrate. The ion incidence angle may also be adjusted by controlling the RF voltage, as will be further described below. In one embodiment, the controller 220 controls and provides RF signals via the matching networks 207, 208, and 210 when the RF generators 212, 214, and 216 are started. This may be done to improve etching rate uniformity during the initial transient period that occurs at startup, as will be further described below.

[0093] In one embodiment, the controller 220 controls the power and / or current supplied to each of the coils 240 as a coarse adjustment. The radius and / or position of the coils 240 can be adjusted similarly or alternatively. Exemplary radii Ri and Ro are illustrated for the inner coil set 280 and the outer coil set 282, and refer to the inner radius of the innermost winding of the coil 240 windings. The inner coil set 280 may include one or more coils, and the outer coil set 282 may include one or more coils. The distance between the coil set and the coils of each coil set may also be adjusted. The controller 220 also controls the RF signals supplied to the RF electrodes 230, 232, 234, 236, and 238 as a fine adjustment. This may be done to meet stringent requirements for ion incidence angle and / or etching rate uniformity. In one embodiment, the inner coil set 280 is positioned perpendicular to one or more RF electrodes of the substrate support 205, and the outer coil set 282 is positioned perpendicular to one or more other RF electrodes of the substrate support 205. The coils may be positioned perpendicular to the RF electrodes, for example, if the inner radius of the coil, measured from the centerline of the processing chamber 204 (e.g., centerline 290), is the same as the radial distance between the centerline and the RF electrode. The sample radial distance Re between the RF electrode 236 and the centerline 290 is shown.

[0094] Figure 3 shows a second part 300 of the substrate processing system, including a gas delivery system 302 for a gas injector 304. A TCP reactor coil 240 is located in a channel of the plenum 242 and receives RF signals from a power supply 248 via a TCCT matching network 250.

[0095] The gas delivery system 302 includes a controller 220 and a gas delivery assembly 330 including one or more gas sources 332-1, 332-2, ..., and 332-N (collectively referred to as gas sources 332), where N is an integer greater than zero. The gas sources 332 supply one or more gases (e.g., etching gas, carrier gas, purge gas, etc.) and mixtures thereof. The gas sources 332 may also supply purge gas. The gas sources 332 are connected to the manifold 340 by valves 334-1, 334-2, ..., and 334-N (collectively referred to as valves 334) and mass flow controllers 336-1, 336-2, ..., and 336-N (collectively referred to as mass flow controllers 336). The output of the manifold 340 is sent to the processing chamber 204 in Figure 1. This is merely an example, but it shows the output of the manifold 340 injector 304. The controller 220 may control the operation of the valve 334 and the mass flow controller 336.

[0096] In one embodiment, the supply source set is configured to (i) supply compressed dry air to one or more central sections of the plenum 242, and (ii) supply atmospheric air to one or more intermediate sections and / or one or more outer sections of the plenum 242. In one embodiment, the air supplied to one or more intermediate sections and / or one or more outer sections is amplified air supplied via one or more air amplifiers. One or more mass flow controllers may include air amplifiers. The air amplifiers increase the amount of air supplied over a period of time.

[0097] Figure 4 shows a portion of another substrate processing system 400, which includes a plasma density profile control system 402. The substrate processing system 400 includes a processing chamber 403, which includes a substrate support 404 supporting a substrate 406. The plasma density profile control system 402 includes the substrate support 404, an RF generation system 407, a power supply 408, and a controller 410. The plasma density profile control system 402 controls the plasma density distribution profile over and above the substrate 406 by controlling an RF signal sent to an RF electrode 412 provided on the substrate support 404. The example in Figure 4 is provided to illustrate other exemplary substrate supports. Although not shown in Figure 4, a plenum, dielectric window, and coil may be included, as shown in Figure 2.

[0098] The substrate support 404 includes a top plate 420, a base plate 422, and an intermediate bonding layer 424. The top plate 420 is formed from a non-conductive material such as ceramic and may include one or more clamp electrodes 426 and an RF electrode 412. It may include any number of clamp electrodes and RF electrodes. The base plate 422 is formed from a conductive material such as aluminum and may include a coolant channel 428. Coolant may be supplied to the coolant channel 428 via a coolant assembly 430, which may be controlled by a controller 410 based on signals from temperature sensors 432 and 434. The temperature sensor 432 may be located within the substrate support 404. The temperature sensor 434 may be located within the processing chamber 403.

[0099] The RF generation system 407 includes an RF generator 440 and a matching, tuning, and distribution network 442, which may operate similarly to the RF generators 212, 214, 216 and matching networks 207, 208, 210 in Figure 2. The RF generator 440 receives power from a power supply 408 and may be controlled by a controller 410. It may include any number of RF generators, matching, tuning, and distribution networks, and / or RF electrodes. Each RF generator and matching, tuning, and distribution network may be connected to any number of RF electrodes. The RF electrodes may be of different sizes and shapes and may be arranged in various predetermined patterns.

[0100] The inner coil, outer coil, RF electrode, and bias electrode referred to herein may be supplied with RF signals of the same or different voltages and / or the same or different frequencies. For example, the RF signals and bias signals supplied to the RF electrode and bias electrode may be 100 kilohertz (kHz) to 100 megahertz (MHz) signals. The RF signals supplied to the inner coil and outer coil may be 1 to 13 MHz signals. In one embodiment, the RF signals supplied to the RF electrode and bias electrode are of the same frequency. In another embodiment, the RF signals supplied to the RF electrode and bias electrode are of different frequencies. The RF signals supplied to the RF electrode may be of the same frequency, but may be different in frequency from the RF signal supplied to the bias (or bias RF) electrode.

[0101] Figure 5 shows a portion 500 of a substrate support containing an RF circuit having multiple RF regions. The portion 500 supports a substrate 504 and includes a base plate 502 having one or more edge rings 506. The base plate 502 may be called a cathode and includes a first RF electrode 510 and a second RF electrode 512, which may be provided within cavities 514, 516. The cavities 514, 516 may be filled with air (or dielectric) and / or dielectric material. The dielectric material may be called a cover for the electrodes 510, 512. If the cavities 514, 516 are filled with air, the electrodes 510, 512 may be separated from the base plate 502 via the dielectric material. The electrodes 510, 512 are connected to their respective matching networks 518, 520. The electrodes 510, 512 provide their respective RF regions. Each of the RF electrodes 510 and 512 may be provided with different RF voltages, for example, Vb1 and Vb2 for each of the two regions. RF electrode 510 provides a radially inner RF region based on Vb1. RF electrode 512 provides a radially outermost RF region based on Vb2.

[0102] Figure 6 shows a schematic diagram of the RF circuit of part 500 in Figure 5. The RF circuit has each RF voltage V AC1 , V AC2 It includes two RF sources 600 and 602 having an RF voltage V. AC1 and V AC2 These are supplied to the substrate 604 in the same way as the RF electrodes 510 and 512 that supply their respective voltages to the substrate 504. The two RF sources 600 and 602 may be connected to the ground reference 606.

[0103] Figure 7 shows plots of ion flux and plasma density against substrate radius for a substrate support without RF electrodes. Curve 700 is ion flux against substrate radius. Curve 702 is plasma density against substrate radius. For a substrate support without RF electrodes, the flux is typically high near the center of the substrate and low near the radially outer edges of the substrate. The ion heterogeneity in the example in Figure 7 is 32%, which can be estimated using Equation 1 above, with the maximum ion flux at 0 cm and the minimum ion flux at 15 cm. For plasma density, the opposite is true, as shown in the figure. The plasma density curve is typically a mirror image of the ion flux curve. This is also true for other ion flux plots mentioned herein where the plasma density curve is not shown.

[0104] In the example in Figure 5, the RF electrodes are located below the substrate. The RF electrodes may be supplied with an RF voltage such that electrodes with higher Vb are located below high plasma density regions and electrodes with lower Vb are located below low plasma density regions. The electrodes with higher Vb have higher potentials, causing some of the plasma in the high-density regions to move to the low-density regions above the RF regions with lower Vb. This results in a more uniform plasma density distribution across the entire substrate. This is further illustrated by the exemplary plot in Figure 8, in which case the radially inward region provided by RF electrode 510 receives a higher Vb (e.g., 180V) than RF electrode 512, which receives a lower Vb (e.g., 90V).

[0105] Rather than improving plasma density uniformity, plasma density non-uniformity may worsen, potentially leading to increased flux near the center of the substrate (or a heavier center). This is true when a higher Vb RF electrode is placed under a low plasma density and low flux region. In such a configuration, the higher Vb RF electrode causes some of the plasma from the low plasma density region to move to the higher plasma density region, resulting in a more center-heavy plasma distribution profile. Uniformity deteriorates, for example, when the radially inner region provided by RF electrode 510 receives a lower RF voltage (e.g., 90V) than the radially outer region receiving a higher RF voltage (e.g., 180V) provided by RF electrode 512. This is illustrated in Figure 9.

[0106] Providing one RF electrode with a higher Vb than another RF electrode can lead to problems. Different regions of the substrate may have different corresponding ion energies, resulting in different etching rates. Figures 10A and 10B show exemplary plots of energy versus ion diffusion angle for two RF regions where the radially inner region receives a higher RF voltage than the radially outer region. Figures 11A and 11B show exemplary plots of energy versus ion diffusion angle for two RF regions where the radially outer region receives a higher RF voltage than the radially inner region. In Figures 10A-11B, theta (θ) refers to the ion diffusion angle to the entire substrate and is equal to the inverse positive tangent of the square root of the ion temperature Ti with respect to the sheath voltage Vs, as expressed in Equation 2.

number

[0107] FIG. 12 shows an example of a portion 1200 of a substrate support including an RF circuit having a plurality of RF regions including a bias RF region. The portion 1200 includes a base plate 1202 that supports a substrate 1204 and has one or more edge rings 1206. The base plate 1202 may be referred to as a cathode and includes a first RF electrode 1210 and a second RF electrode 1212, which may be provided within cavities 1214, 1216. The cavities 1214, 1216 may be filled with air and / or a dielectric material. When the cavities 1214, 1216 are filled with air, the electrodes 1210, 1212 may be separated from the base plate 1202 via a dielectric material. The dielectric material may enclose the electrodes 1210, 1212 and is called a cover. The electrodes 1210, 1212 are connected to respective matching networks 1218, 1220. Different RF voltages, such as Vb1 and Vb2, may be provided to each of the RF electrodes 1210, 1212. The base plate 1202 may also operate as an RF electrode and may receive an RF voltage from a third RF matching network 1222. The electrodes 1210, 1212 and the base plate 1202 provide corresponding RF regions.

[0108] FIG. 13 shows a schematic diagram of the RF circuit of the portion 1200 of the substrate support of FIG. 12. The RF circuit includes three RF sources 1300, 1302, 1304 having respective RF voltages V AC1 , V AC2 , and V AC3(Bias) . The RF voltage V AC3(Bias) may be referred to as a bias RF voltage. The RF sources 1300, 1302, 1304 are connected to the substrate 1204 and provide respective RF voltages to the substrate 1204. The RF sources 1300, 1302, 1304 may be connected to a ground reference 1306. This arrangement of FIG. 12 has a similar problem to the arrangement of FIG. 5 in that the corresponding ion energy may vary depending on the region of the substrate 1204, and as a result, the associated etching rate may vary.

[0109] To improve etching rate uniformity and plasma uniformity and minimize the ion tilt angle, (i) the radii of the inner and outer coils may be changed, such as the radius of coil 240 in Figure 2; (ii) the power and / or current supplied to the inner and outer coils may be adjusted; (iii) the RF voltage supplied to the RF electrode may be adjusted; and (iv) one or more dielectric layers and / or dielectric separators may be provided above the RF electrode to control the voltage potential supplied to the substrate. This may be done to maintain similarity of ion energy across the substrate and uniformity of the plasma density distribution across the substrate. Examples of the aforementioned ion energies are shown in Figures 20A to 21B. The dielectric layers and / or dielectric separators are provided between the RF electrode and the substrate. The dielectric layers and / or dielectric separators may be integrated within a substrate support and / or provided on the substrate support. These adjustments and encapsulations as described improve etching rate uniformity because the ions across the substrate receive similar energy. Examples including dielectric layers and / or separators are shown in Figures 14, 17, 26, and 27.

[0110] Figure 14 shows an example of a portion 1400 of a substrate support containing an RF circuit having multiple RF regions, including bias RF regions and dielectric layers. The portion 1400 includes a base plate 1402 supporting a substrate 1404 and having one or more edge rings 1406. The base plate 1402 may be called a cathode and includes a first RF electrode 1410 and a second RF electrode 1412, which may be provided within cavities 1414, 1416. The cavities 1414, 1416 may be filled with air and / or dielectric material to encapsulate the electrodes 1410, 1412. If the cavities 1414, 1416 are filled with air, the electrodes 1410, 1412 may be separated from the base plate 1402 via the dielectric material. The dielectric material may be called a cover for the electrodes 1410, 1412.

[0111] Electrodes 1410 and 1412 are connected to matching networks 1418 and 1420, respectively. Different RF voltages may be supplied to each of the RF electrodes 1410 and 1412, for example, Vb1 and Vb2. The base plate 1402 may also act as an RF electrode and receive an RF voltage from a third RF matching network 1422. Electrodes 1410 and 1412 and the base plate 1402 provide corresponding RF regions (e.g., three RF regions).

[0112] The base plate 1402 also includes a dielectric layer 1430. The dielectric layer 1430 may include a plurality of dielectric separators (dielectric separators 1432 and 1434 are shown). A dielectric separator may refer to at least a portion of a layer of dielectric material provided between the RF electrode and the substrate. In one embodiment, a dielectric separator is implemented as a region of the dielectric layer containing dielectric (or nonconductive) material. Other regions of the dielectric layer may contain conductive material. For example, a region 1440 provided between dielectric separators 1432 and 1434 may be formed from a conductive material (e.g., aluminum). The base plate 1402 may include a concave region (two concave regions 1450 and 1452 are shown) extending across the entire top of the base plate on which the dielectric separators are provided. The dielectric separators 1432, 1434 and the cover may be formed from the same material and have the same or similar impedance, or they may be formed from different materials and have different impedances. This also applies to dielectric separators and covers of other embodiments disclosed herein. In one embodiment, dielectric separator 1432 is formed from a different dielectric material than dielectric separator 1434.

[0113] In one embodiment, the base plate 1402 is formed from a conductive material (e.g., aluminum). A portion of the conductive material may be provided between the dielectric separators 1432, 1434 and the cover (or dielectric cover). In the illustrated embodiment, the dielectric cover is in contact with the dielectric separators 1432, 1434, and no conductive material is provided between the dielectric cover and the dielectric separators 1432, 1434.

[0114] Figure 15 shows a schematic diagram of the RF circuit in portion 1400 of the substrate support in Figure 14. The RF circuit consists of each RF voltage V AC1 , V AC2 , and V AC3(Bias) The system includes three RF sources 1500, 1502, and 1504. The RF sources 1500, 1502, and 1504 are connected to a substrate 1404 to provide their respective RF voltages. The RF sources 1500, 1502, and 1504 may be connected to a ground reference 1506. Dielectric separators 1432 and 1434 in Figure 14 are represented by capacitors 1532 and 1534 connected in series with the RF sources 1500 and 1502.

[0115] Dielectric separator 1432 and RF source 1500 operate as a first voltage divider. Dielectric separator 1434 and RF source 1502 operate as a second voltage divider. When power is applied, the RF voltage as seen from the substrate, provided by the voltage dividers and the third RF source 1504, may vary depending on the voltages of RF sources 1500, 1502, and 1504 and the materials of the dielectric separators.

[0116] Figure 16 shows an exemplary plot of ion flux versus substrate radius for the substrate support in Figure 14. In the exemplary plot of Figure 16, the plasma heterogeneity is 7%, but it can be lower. In the exemplary plot of Figure 16, the voltage of the first RF source 1500 is 600V, and the voltage of the second RF source 1502 is 300V.

[0117] Figure 17 shows an example of a portion of a substrate support containing an RF circuit having multiple RF regions having dielectric layers but no bias RF electrodes. The portion 1700 includes a base plate 1702 supporting a substrate 1704 and having one or more edge rings 1706. The base plate 1702 may be referred to as the cathode and includes a first RF electrode 1710 and a second RF electrode 1712, which may be located within cavities 1714, 1716. The cavities 1714, 1716 may be filled with air and / or dielectric material to enclose the electrodes 1710, 1712. If the cavities 1714, 1716 are filled with air, the electrodes 1710, 1712 may be separated from the base plate 1702 via the dielectric material. The dielectric material may be referred to as the cover. The electrodes 1710, 1712 are connected to matching networks 1718, 1720, respectively. Each of the RF electrodes 1710 and 1712 may be provided with a different RF voltage, for example, Vb1 and Vb2. In this example, the base plate 1702 is not directly provided with an RF voltage, such as an RF bias voltage. The electrodes 1710 and 1712 provide corresponding RF regions (e.g., two RF regions). The base plate 1702 also includes a dielectric layer 1730 covering the top surface of the base plate 1702. The dielectric layer 1730 is formed of a non-conductive material, which may be the same as or different from the material of the cover.

[0118] Figure 18 shows a schematic diagram of the RF circuit in a portion of the substrate support shown in Figure 17. The RF circuit consists of the respective RF voltages V AC1 , V AC2The system includes two RF sources 1800 and 1802. Initially, when power is applied, the dielectric layer 1730 in Figure 17 is almost short-circuited and becomes part of an open circuit over time. As a result, initially, equivalent RF circuit representations may include capacitors 1806 and 1808, and over time, they may include capacitor 1810 instead of capacitors 1806 and 1808. Thus, initially, two different RF voltages are supplied to the substrate 1704 through multiple regions of the dielectric layer 1730 (represented by capacitors 1806 and 1808), and over time, and as this arrangement approaches a steady state, a single RF voltage is supplied through the dielectric layer 1730 (represented by capacitor 1810). The RF sources 1800 and 1802 are connected to a ground reference 1812.

[0119] Capacitors 1806, 1808 and RF sources 1800, 1802 initially operate as two voltage dividers, and over time, capacitor 1810 and RF sources 1800, 1802, connected in parallel, operate as a single voltage divider. At power-up, the RF voltages supplied by the two voltage dividers, as seen from the substrate, may be different. This corresponds to a period of 200–900 milliseconds and / or until the substrate reaches a steady state. By setting and supplying different voltages during this initial period, the corresponding plasma density profile is controlled, the ion gradient angle is improved during this initial period, and etching rate uniformity across the substrate is enhanced. Similar voltage differences may also be observed in the initial transient substrate of other embodiments disclosed herein. These voltage differences may be provided by the RF electrodes and / or bias RF electrodes.

[0120] Figure 19 shows an exemplary plot of ion flux versus substrate radius for the substrate support in Figure 17. In the exemplary plot of Figure 19, the plasma heterogeneity is 6%, but it can be lower. In the exemplary plot of Figure 19, the voltage of the first RF source 1800 is 600V, and the voltage of the second RF source 1802 is 300V.

[0121] As shown in the examples in Figures 14 and 17, by providing two or three RF regions and one or more dielectric layers and / or separators, ions can have similar potentials across the entire wafer, as shown in Figures 20A-21B. Figures 20A and 20B correspond to the arrangement in Figure 14. Figures 21A and 21B correspond to the arrangement in Figure 17. Figures 20A and 20B show plots of energy versus ion diffusion angles for two RF regions provided by RF electrodes 1410 and 1412 of the substrate support in Figure 14. Figures 21A and 21B show plots of energy versus ion diffusion angles for two RF regions provided by RF electrodes 1710 and 1712 of the substrate support in Figure 17. The arrangements in Figures 14 and 17, combined with adjustments to the radii of the inner and outer coils (e.g., coil 240 in Figure 2) and / or adjustments to the power, voltage, and / or current supplied to coil 240, improve plasma density profile uniformity, and consequently improve etching rate uniformity across the entire substrate. As an example, the amount of current supplied to the outer coil may be twice the amount of current supplied to the inner coil, such that the TCCT ratio is 0.5.

[0122] Figure 22 shows feature 2200 of substrate 2202, illustrating the perpendicular angle of ion incidence and aspect ratio parameters. The feature has a width A and a depth D. The aspect ratio is equal to the depth D divided by the width A. The angle of incidence is 0°, so that the direction of the ions (represented by vector 2204) colliding with the substrate is perpendicular to the surface of substrate 2202.

[0123] Figure 23 shows a feature 2300 of substrate 2302 created by acute-angle ion incidence, represented by vector 2304. When this occurs, continued etching at this acute-angle ion incidence may be required. Continuing etching at this angle may require a plasma shift. This acute-angle ion incidence can be provided by utilizing the arrangements in Figures 14 and 17, supplying a high RF voltage to the central (or first) RF region and applying a lower RF voltage to the outer (or second) RF region. The outer region may refer to the region near the periphery of the substrate. Furthermore, the corresponding outer coil set (e.g., outer coil set 282 in Figure 2) receives more power than the corresponding inner coil set (e.g., inner coil set 280 in Figure 2). This provides the edge-heavy plasma with equal ion energy across the entire substrate. The ion energy is shown in Figures 24A and 24B. Figures 2A and 24B show exemplary plots of energy versus ion diffusion angles for two RF regions provided by the substrate support of Figure 17, where the central potential is significantly higher than the edge potential.

[0124] Figure 25 shows an exemplary plot of ion flux versus substrate radius for the substrate support of Figure 17, where the central potential is significantly higher than the edge potential. In the illustrated example, the radially inner region receives 900 V and the radially outer region receives 180 V, with a TCCT ratio of 0.5 and an edge-heavy plasma where plasma density heterogeneity is 24% across the entire top surface of the substrate.

[0125] Figure 26 shows a top view of the base plate 2600 of the substrate support. In the illustrated example, three rings 2601, 2602, and 2604 with RF electrodes 2606, 2608, and 2610 are shown, which may be embedded in the base plate 2600. Any number of rings of RF electrodes may be included, and each ring may have any number of RF electrodes. An exemplary pattern of RF electrodes is illustrated. Other patterns may be implemented. Each of the rings 2601, 2602, and 2604 may point to a specific RF region and / or include multiple different RF regions. Each RF voltage may be supplied independently to the RF electrodes 2606, 2608, and 2610. In one embodiment, the RF electrodes in each of the rings 2601, 2602, and 2604 receive the same RF voltage, while the RF electrodes in different rings of 2601, 2602, and 2604 receive different RF voltages. Although the RF electrodes 2606, 2608, and 2610 are shown positioned within a ring, they may be in other arrangements and may have different sizes and / or shapes than those shown. The RF electrodes may have the same size and shape as shown, or they may have different sizes and shapes.

[0126] In one embodiment, each of the rings 2601, 2602, and 2604 corresponds to one of the RF regions in the example of Figure 14. For example, the first of the rings 2601, 2602, and 2604 provides a first RF region, the second of the rings 2601, 2602, and 2604 provides a second RF region, and the third of the rings 2601, 2602, and 2604 provides a third RF region. In one embodiment, the third RF region receives a bias RF voltage provided by the center ring 2602, and the bias RF voltage is provided to the RF electrode 2608 in the center ring 2602 but not to the base plate of the substrate support. In another embodiment, the bias RF voltage is provided to the RF electrode of the radially innermost ring 2604 or the RF electrode of the radially outermost ring 2601. In one embodiment, the RF electrodes of the rings are encased in a dielectric material (or cover) as described above and surrounded by a conductive material.

[0127] Each of the RF electrodes 2606, 2608, and 2610 may have its own dielectric separator 2620, 2622, and 2624. The dielectric separators 2620, 2622, and 2624 may be non-conductive "islands" separated and / or surrounded by a conductive material and located above the RF electrodes 2606, 2608, and 2610, or they may be the upper portion of a dielectric cover enclosing the RF electrodes 2606, 2608, and 2610. In one embodiment, the dielectric separators 2620, 2622, and 2624 may be in contact with the substrate when the substrate is placed on the substrate support. In another embodiment, the substrate support and / or base plate may include a layer of conductive or non-conductive material between the dielectric separator and the substrate.

[0128] In yet another embodiment, a single dielectric layer replaces dielectric separators 2620, 2622, and 2624 and covers the base plate 2600 of the corresponding substrate support. In yet another embodiment, a single uniform dielectric layer covers all of the RF electrodes 2606, 2608, and 2610 and is provided between the RF electrodes 2606, 2608, and 2610 and the substrate. The dielectric layer may be the top layer of the base plate and / or substrate support, or it may be an intermediate layer of the base plate and / or substrate support.

[0129] In another embodiment, one or more of the RF electrodes 2606, 2608, 2610 and / or the RF electrode rings 2601, 2602, 2604 are configured to operate as heating elements in addition to supplying an RF voltage to the substrate. For example, the RF electrode of one of the rings 2601, 2602, 2604 (e.g., the outer ring 2601) is supplied with both high-frequency and low-frequency currents, and operates as both a heating element and an RF source. As an example, the power supply 255 in Figure 2 may supply a low-frequency current to the RF electrode operating as a heating element. The RF electrode may receive low-frequency power while receiving high-frequency RF signals. The controller 220 in Figure 2 may adjust the current to the heating element based on temperature signals from, for example, temperature sensors (e.g., temperature sensors 432, 434 in Figure 4).

[0130] Figure 27 shows an example of a portion 2700 of a substrate support containing multiple layers 2702, 2704 of RF electrodes for multiple RF regions. The substrate support includes a base plate 2710 containing RF electrodes 2712, 2714, 2716 arranged in layers 2702, 2704, and one or more edge rings 2718. Layers 2702, 2704 may contain any number of RF electrodes of various patterns. RF electrode 2716 may be located below one or more of the RF electrodes 2712, 2714, or it may be horizontally offset so as to be in a layer below the RF electrodes 2712, 2714, rather than directly below them.

[0131] The RF electrodes 2712, 2714, and 2716 are provided in cavities 2720, 2722, and 2724, surrounded by air and / or wrapped in a dielectric material (called a cover). If cavities 2720, 2722, and 2724 are filled with air, the electrodes 2712, 2714, and 2716 may be separated from the base plate 2710 via the dielectric material. The dielectric material is provided between cavities 2720, 2722, and 2724 and can separate the cavities 2720, 2722, and 2724. In another embodiment, the RF electrodes 2712, 2714, and 2716 are not wrapped in a dielectric material. The substrate 2730 is provided on a substrate support above the RF electrodes 2712, 2714, and 2716. RF electrodes 2712, 2714, and 2716 receive RF voltages via matching networks 2732, 2734, and 2736.

[0132] Although the RF electrode examples in Figures 14, 17, 26, and 27 are shown mounted within the base plate of the substrate support, the RF electrode may also be mounted within the top plate of the substrate support (e.g., top plate 420 in Figure 4).

[0133] Examples disclosed herein enable control of the plasma density distribution profile across the lateral direction of the substrate. The parameters of the inner and outer coils, RF electrode parameters, and / or dielectric separator parameters are adjustable to (i) provide a more uniform plasma density distribution across the entire substrate, or (ii) provide a plasma density (or ion flux on the substrate) distribution profile that is center-heavy or radially outer edge-heavy. A center-heavy distribution is when the plasma density near the center of the substrate is higher than that near the radially outer edge of the substrate. A radially outer edge-heavy distribution is when the plasma density near the radially outer edge of the substrate is higher than that near the center of the substrate.

[0134] The parameters for the inner and outer coils may include the radii of the inner and outer coils, the positions of the inner and outer coils relative to a reference point in the processing chamber and / or relative to each other, and the power, voltage, and / or current supplied to the inner and outer coils. The RF electrode parameters may include the power, voltage, and / or current supplied to the RF electrodes, the size and shape of the RF electrodes, the number of RF electrodes per RF area, the number of RF areas of the RF electrodes, and the positions of the RF electrodes. The dielectric separator parameters may include the size and shape of the dielectric separators, the number of dielectric separators, the material of the dielectric separators, and the positions of the dielectric separators.

[0135] Figure 28 shows a method for adjusting etching rate uniformity. This method is applicable to the systems in Figures 2-4, embodiments in Figures 5, 12, 14, 17, 26, and 27, and other embodiments disclosed herein. At least some of the following operations are performed by the controller 220 in Figure 2 and may be repeated. The method may begin at 2800. At 2802, the controller 220 may determine the recipe and operating parameters. At 2804, the substrate is placed on a substrate support (e.g., one of the substrate supports described above). At 2806, process gases are supplied to the processing chamber according to the recipe to generate plasma.

[0136] In step 2808, the controller 220 may (i) determine the current level specified by the determined recipe and supply the corresponding amount of current to the inner and outer coils 240, and (ii) determine the RF voltage level specified by the determined recipe and supply the determined RF voltage to the RF electrodes of the substrate support. In step 2810, the controller 220 etches the substrate for a predetermined time.

[0137] In 2812, a metrological process may be performed to determine the etching rate across the entire substrate. This includes evacuating the processing chamber, removing the substrate, and measuring the features of the substrate. The etching depth and / or feature dimensions across the entire substrate may be measured and recorded for comparison with other previously measured dimensions of the substrate.

[0138] In 2813, the controller 220 may determine whether the etching rate uniformity has improved. The controller 220 may determine the current etching rate uniformity by comparing the current etching depth and / or feature dimensions across the entire substrate with the dimensions of the substrate before operation 2810. This etching rate uniformity may be compared with the previous etching rate uniformity to determine whether the etching rate uniformity has improved. Operation 2813 may be skipped in the first iteration of this method. The controller 220 may compare the current etching rate uniformity (or etching rate non-uniformity) with the previous etching rate uniformity (or etching rate non-uniformity) from a previous iteration of this method. If the etching rate uniformity has improved, operation 2814 may be performed; otherwise, operation 2820 may be performed.

[0139] In step 2814, the controller 220 may determine whether the etching rate non-uniformity is below a predetermined threshold. If yes, operation 2822 is performed, and the current level and RF voltage values ​​may be stored in the controller 220's memory as updated values ​​for the determined recipe or as values ​​for a different recipe. If the predetermined threshold is not met, operation 2816 may be performed.

[0140] In 2816, the controller 220 may adjust one or more current levels of the inner and outer coils 240 and adjust the power supplied to one or more of the coils 240, and then return to operation 2804. The ion density is proportional to the power supplied to the coils 240, which is related to the level of plasma density. Operations 2804, 2806, 2808, 2810, and 2812 may then be performed on a different substrate. In one embodiment, operations 2804, 2806, 2808, 2810, and 2812 are repeated on the same substrate.

[0141] In 2820, the controller 220 may adjust the RF voltage of the RF electrode and then return to operation 2804. The higher the applied RF voltage, the higher the ion energy and the associated etching rate. The etching rate is proportional to the square root of the ion energy. Operations 2804, 2806, 2808, 2810, and 2812 may then be performed on a different substrate. In one embodiment, operations 2804, 2806, 2808, 2810, and 2812 are repeated on the same substrate.

[0142] While operations 2816 and 2820 describe the adjustment of specific parameters, other parameters may also be adjusted, including any of the inner and outer coil parameters, RF electrode parameters, and dielectric separator parameters described above. The processing system may be modified based on the adjusted parameters, and the operations described above may be repeated to evaluate the updated configuration.

[0143] The operations described above are illustrative examples. Depending on the application, operations may be performed sequentially, synchronously, simultaneously, consecutively, during overlapping periods, or in different orders. Depending on the implementation and / or the order of events, some operations may not be performed or may be skipped.

[0144] The foregoing description is for illustrative purposes only and is not intended to limit the Disclosure, its applications, or uses. The broad teachings of this Disclosure can be implemented in various forms. Therefore, although this Disclosure includes certain embodiments, the true scope of this Disclosure should not be limited in this way, as other modifications will become apparent upon consideration of the drawings, specification, and the following claims. It should be understood that one or more steps within a method may be performed in a different order (or simultaneously) without altering the principles of this Disclosure. Furthermore, although each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of this Disclosure can be implemented and / or combined with features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and substituting one or more embodiments with one another remains within the scope of this Disclosure.

[0145] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using a variety of terms such as “connected,” “engaged,” “joined,” “adjacent,” “next to,” “above,” “below,” and “provided.” Unless explicitly stated to be “direct,” where a relationship between first and second elements is described in the above disclosure, that relationship may be a direct relationship in which no other intervening elements exist between the first and second elements, or it may be an indirect relationship in which one or more intervening elements exist between the first and second elements (spatially or functionally). Where used herein, the expression “at least one of A, B, and C” should be interpreted using a non-exclusive logic OR to mean a logic (A or B or C), and not to mean “at least one of A, at least one of B, and at least one of C.”

[0146] In some implementations, the controller is part of a system that may be part of the examples described above. Such a system may include semiconductor processing equipment such as one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronic equipment for controlling the operation of the system before, during, and after processing semiconductor wafers or substrates. This electronic equipment may be referred to as a “controller” capable of controlling various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein, such as supplying processing gases, setting temperature (e.g., heating and / or cooling), setting pressure, setting vacuum, setting power, setting radio frequency (RF) generators, setting RF matching circuits, setting frequency, setting flow rates, setting fluid supply, setting position and operation, loading and unloading wafers to and from tools and other transport tools and / or load locks that connect to or interface with the specific system.

[0147] Broadly speaking, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that, for example, receive and issue commands, control operations, enable cleaning operations, enable endpoint measurement, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers (e.g., software) that execute program instructions. Program instructions are instructions transmitted to the controller in the form of various individual settings (or program files) that define operational parameters for performing a specific process on or for a semiconductor wafer, or for a system. In some embodiments, operational parameters may be part of a recipe defined by a process engineer to achieve one or more processing steps during the manufacturing of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0148] In several implementations, the controller may be part of a computer that is integrated into the system, connected to the system, or otherwise networked to the system, or a combination thereof, or connected to such a computer. For example, the controller may be in the “cloud” or all or part of a host computer system in a manufacturing plant that enables remote access to wafer processing. By enabling remote access to the system, the computer can monitor the current progress of an assembly operation, verify the history of past assembly operations, verify trends or performance criteria from multiple assembly operations, modify the parameters of the current process, set processing steps following the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system via a network that may include a local network or the internet. The remote computer may include a user interface that enables the input or programming of parameters and / or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data that define the parameters of each processing step performed during one or more operations. It should be understood that these parameters may be specific to the type of process being performed and the type of tool to which the controller is configured to interface or control. Therefore, as described above, the controllers may be distributed by including one or more separate controllers that are networked together and work toward a common purpose such as the processes and control described herein. An example of controllers distributed for such purposes is one or more integrated circuits on the chamber that are combined to control a process on the chamber and communicate with one or more integrated circuits that are remotely located (e.g., at the platform level or as part of a remote computer).

[0149] Exemplary systems, though not limited to them, may include plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, clean chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems associated with or used in the assembly and / or manufacture of semiconductor wafers.

[0150] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a main computer, other controllers, or tools used for material transport to move wafer containers to tool locations and / or into and out of load ports within the semiconductor manufacturing plant.

Claims

1. A substrate processing system, A substrate support disposed within a processing chamber, configured to support a substrate on the upper surface of the substrate support, A base plate made from conductive material, A substrate support including M electrodes (where M is an integer of 2 or more) provided within the base plate, N radio frequency (RF) sources (where N is an integer of 2 or more) are configured to supply each RF signal to one or more of the M electrodes, wherein each RF signal is supplied to a different set of the M electrodes, and each set includes one or more different electrodes from the M electrodes. A controller configured to cause one or more coils to independently generate and maintain plasma within the processing chamber from the N RF sources, and to individually control the voltage output of the N RF sources to adjust the plasma within the processing chamber, A substrate processing system including the following.

2. A substrate processing system according to claim 1, wherein M is N or greater.

3. A substrate processing system according to claim 1, wherein N is M or greater.

4. A substrate processing system according to claim 1, The aforementioned controller, Selecting which one or more of the N RF sources will provide one or more of the respective RF signals to one of the M electrodes, or For each set of M electrodes, select which of the N RF sources provides one or more of the respective RF signals to that set of M electrodes. A substrate processing system configured to perform at least one of the following.

5. A substrate processing system according to claim 4, wherein M is N or greater.

6. A substrate processing system according to claim 1, The base plate further includes N cavities located on the upper surface of the base plate, A substrate processing system in which the M electrodes are arranged within the N cavities.

7. A substrate processing system according to claim 6, A substrate processing system in which the M electrodes are embedded in a dielectric material located within the N cavities.

8. A substrate processing system according to claim 1, Located on the upper surface of the base plate, N cavities in which the M electrodes are arranged, One or more dielectric separators are disposed between the M electrodes and the substrate, A substrate processing system, further including the above.

9. A substrate processing system according to claim 1, A substrate processing system further comprising a dielectric layer disposed between the M electrodes and the base plate.

10. A substrate processing system according to claim 1, A substrate processing system in which the frequencies of the N RF signals are the same as the frequencies used to generate the plasma.

11. A substrate processing system according to claim 1, A substrate processing system wherein the frequencies of the N RF signals are different from the frequencies used to generate the plasma.

12. A substrate processing system according to claim 1, The processing chamber, The one or more coils include an inner coil and an outer coil, The inner coil is positioned outside the processing chamber, adjacent to the window of the processing chamber. The outer coil is located outside the processing chamber, adjacent to the window, and radially outward from the inner coil, and is positioned relative to the processing chamber. An RF source configured to supply power to the inner coil and the outer coil, It further includes, A substrate processing system, wherein the controller is further configured to control the RF source in order to adjust the current supplied to the inner coil relative to the current supplied to the outer coil.

13. A substrate processing system according to claim 12, The aforementioned controller, To supply more current to the outer coil than to the inner coil, or To supply more current to the inner coil than to the outer coil, A substrate processing system configured to control the RF source in order to perform one of the following actions.

14. A substrate processing system according to claim 1, A substrate processing system further includes an RF source configured to supply a bias voltage to the base plate.

15. A substrate processing system according to claim 1, A substrate processing system wherein at least one of the N RF signals has a different frequency from at least one other of the N RF signals.

16. A substrate processing system according to claim 1, wherein the N RF signals have the same frequency.

17. A substrate processing system according to claim 1, A substrate processing system further comprising N matching networks arranged between the N RF sources and the M electrodes.

18. A substrate processing system, A processing chamber including a window, A substrate support disposed within a processing chamber, configured to support a substrate on the upper surface of the substrate support, base plate and A substrate support including M electrodes (where M is an integer of 2 or more) provided within the base plate, Outside the processing chamber, adjacent to the window, is an inner coil, An outer coil is positioned outside the processing chamber, adjacent to the window, and radially outward from the inner coil, N radio frequency (RF) sources (where N is an integer of 2 or more) are configured to supply each RF signal to one or more of the M electrodes, wherein each RF signal is supplied to a different set of the M electrodes, and each set includes one or more different electrodes from the M electrodes. N matching networks are arranged between the N RF sources and the M electrodes, A controller configured to generate plasma by supplying RF power to the inner coil and the outer coil, and to change the plasma density distribution profile in the processing chamber by (i) changing the power supplied to the inner coil with respect to the outer coil, and (ii) changing the power supplied to at least one of the M electrodes with respect to at least one other of the M electrodes, A substrate processing system including the following.

19. A substrate processing system according to claim 18, wherein M is N or greater.

20. A substrate processing system according to claim 18, wherein N is M or greater.

21. A substrate processing system according to claim 18, The aforementioned controller, Selecting which one or more of the N RF sources will provide one or more of the respective RF signals to one of the M electrodes, or For each set of M electrodes, select which of the N RF sources provides one or more of the respective RF signals to that set of M electrodes. A substrate processing system configured to perform at least one of the following.

22. A substrate processing system according to claim 21, wherein M is N or greater.

23. A substrate processing system according to claim 18, The base plate further includes N cavities located on the upper surface of the base plate, A substrate processing system in which the M electrodes are arranged within the N cavities.

24. A substrate processing system according to claim 23, A substrate processing system in which the M electrodes are embedded in a dielectric material located within the N cavities.

25. A substrate processing system according to claim 18, Located on the upper surface of the base plate, N cavities in which the M electrodes are arranged, One or more dielectric separators are disposed between the M electrodes and the substrate, A substrate processing system further including the above.

26. A substrate processing system according to claim 18, A substrate processing system further comprising a dielectric layer disposed between the M electrodes and the base plate.

27. A substrate processing system according to claim 18, A substrate processing system in which the frequencies of the N RF signals are the same as the frequencies used to generate the plasma.

28. A substrate processing system according to claim 18, A substrate processing system wherein the frequencies of the N RF signals are different from the frequencies used to generate the plasma.

29. A substrate processing system according to claim 18, A substrate processing system further comprising an RF source and a matching network connected between the inner coil and the outer coil.

30. A substrate processing system according to claim 18, A substrate processing system wherein the controller is configured to control the RF source in order to supply more current to the outer coil than to the inner coil.

31. A substrate processing system according to claim 18, A substrate processing system further includes an RF source configured to supply a bias voltage to the base plate.

32. A substrate processing system according to claim 18, A substrate processing system wherein at least one of the N RF signals has a different frequency from at least one other of the N RF signals.

33. A substrate processing system according to claim 18, wherein the N RF signals have the same frequency.

34. A substrate processing system according to claim 18, The M electrodes include a first electrode and a second electrode, The aforementioned controller, A first amount of power is supplied to the inner coil, a second amount of power is supplied to the outer coil, such that the first amount of power is different from the second amount of power, A first RF voltage is supplied to the first electrode, and a second RF voltage is supplied to the second electrode, such that the first RF voltage is greater than the second RF voltage. A system configured to control the supply of the RF signal, PCB processing system.

35. A substrate processing system according to claim 34, A substrate processing system wherein the first electrode is provided radially inward from the second electrode on the base plate and receives a higher RF voltage than the second electrode.

36. A substrate processing system according to claim 34, A substrate processing system wherein the first electrode is provided on the base plate radially outward from the second electrode and receives a higher RF voltage than the second electrode.

37. A substrate processing system according to claim 18, The M electrodes include a first set of electrodes and a second set of electrodes. The electrodes of the first set correspond to the first RF region, The electrodes of the second set correspond to the second RF region, The second RF area is located radially inward from the first RF area, PCB processing system.

38. A substrate processing system according to claim 18, A substrate processing system in which the M electrodes are provided in a plane that is parallel to and offset from the upper surface of the substrate support.

39. A substrate processing system according to claim 18, A substrate processing system in which the M electrodes are provided on separate layers of the base plate.

40. A substrate processing system according to claim 18, A substrate processing system in which the controller is configured to control the N RF signals to adjust the plasma and to improve plasma uniformity during the transient period when the N RF sources are started.

41. A substrate processing system according to claim 18, A substrate processing system in which one or more of the M electrodes also function as heating elements.

42. A substrate processing system, A processing chamber including a window, A substrate support disposed within the processing chamber, configured to support the substrate on the upper surface of the substrate support, base plate and A substrate support comprising: a dielectric layer disposed above the base plate and provided with M electrodes (where M is an integer of 2 or more); Outside the processing chamber, adjacent to the window, is an inner coil, An outer coil is positioned outside the processing chamber, adjacent to the window, and radially outward from the inner coil, N radio frequency (RF) sources (where N is an integer of 2 or more) are configured to supply each RF signal to one or more of the M electrodes, wherein each RF signal is supplied to a different set of the M electrodes, and each set includes one or more different electrodes from the M electrodes. N matching networks are arranged between the N RF sources and the M electrodes, A controller configured to strike plasma by supplying RF power to the inner coil and the outer coil, and to change the plasma density distribution profile in the processing chamber by (i) changing the power supplied to the inner coil with respect to the outer coil, and (ii) changing the power supplied to at least one of the M electrodes with respect to the power supplied to at least one other of the M electrodes, A substrate processing system including the following.

43. A substrate processing system according to claim 42, wherein M is N or greater.

44. A substrate processing system according to claim 42, wherein N is M or greater.

45. A substrate processing system according to claim 42, The aforementioned controller, Selecting which one or more of the N RF sources will provide one or more of the respective RF signals to one of the M electrodes, or For each set of M electrodes, select which of the N RF sources provides one or more of the respective RF signals to that set of M electrodes. A substrate processing system configured to perform at least one of the following.

46. A substrate processing system according to claim 45, wherein M is N or greater.

47. A substrate processing system according to claim 42, A substrate processing system in which the frequencies of the N RF signals are the same as the frequencies used to generate the plasma.

48. A substrate processing system according to claim 42, A substrate processing system wherein the frequencies of the N RF signals are different from the frequencies used to generate the plasma.

49. A substrate processing system according to claim 42, A substrate processing system further comprising an RF source and a matching network connected between the inner coil and the outer coil.

50. A substrate processing system according to claim 42, A substrate processing system wherein the controller is configured to control the RF source in order to supply more current to the outer coil than to the inner coil.

51. A substrate processing system according to claim 42, A substrate processing system further includes an RF source configured to supply a bias voltage to the base plate.

52. A substrate processing system according to claim 42, A substrate processing system wherein at least one of the N RF signals has a different frequency from at least one other of the N RF signals.

53. A substrate processing system according to claim 42, The aforementioned N RF signals have the same frequency, and this is a substrate processing system.

54. A substrate processing system according to claim 42, The M electrodes include a first electrode and a second electrode, The aforementioned controller, A first amount of power is supplied to the inner coil, a second amount of power is supplied to the outer coil, such that the first amount of power is different from the second amount of power, A first RF voltage is supplied to the first electrode, and a second RF voltage is supplied to the second electrode, such that the first RF voltage is greater than the second RF voltage. A system configured to control the supply of the RF signal, PCB processing system.

55. A substrate processing system according to claim 54, A substrate processing system wherein the first electrode is provided radially inward from the second electrode on the base plate and receives a higher RF voltage than the second electrode.

56. A substrate processing system according to claim 54, A substrate processing system wherein the first electrode is provided on the base plate radially outward from the second electrode and receives a higher RF voltage than the second electrode.

57. A substrate processing system according to claim 42, The M electrodes include a first set of electrodes and a second set of electrodes. The electrodes of the first set correspond to the first RF region, The electrodes of the second set correspond to the second RF region, The second RF area is located radially inward from the first RF area, PCB processing system.

58. A substrate processing system according to claim 42, A substrate processing system wherein the M electrodes are provided in the dielectric layer in a plane parallel to and below the upper surface of the substrate support.

59. A substrate processing system according to claim 42, A substrate processing system in which the M electrodes are provided on separate layers of the base plate.

60. A substrate processing system according to claim 42, A substrate processing system in which the controller is configured to control the N RF signals to adjust the plasma and to improve plasma uniformity during the transient period when the N RF sources are started.

61. A substrate processing system according to claim 42, A substrate processing system in which one or more of the M electrodes also function as heating elements.

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