Circuits, memory devices, and calibration methods
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- YANGTZE MEMORY TECH CO LTD
- Filing Date
- 2026-03-05
- Publication Date
- 2026-06-02
AI Technical Summary
Conventional resistance offset calibration (RXOC) procedures in static dynamic random access memory (SDRAM) require a full-rate write clock (WCK) with a large frequency range, necessitating additional circuitry and synchronization states, which complicates design and reduces calibration accuracy.
A fully synchronous RXOC training strategy using a local oscillator in the RXOC circuit to synchronize DFE selection and control logic, eliminating the need for CAS commands and reducing silicon footprint while improving calibration stability.
The solution simplifies RXOC control logic operations, enhances calibration accuracy, and reduces the silicon footprint by using an internal clock source for precise DFE component calibration without requiring additional synchronization states.
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