Abrasive wheels for semiconductor processing, tools for semiconductor processing, processing methods, and methods for manufacturing semiconductor components

Abstract

The present invention provides a new type of semiconductor processing grinding wheel that can be used to process articles containing semiconductors as a material, a semiconductor processing tool using the same, a processing method, and a method for manufacturing semiconductor components. [Solution] The present invention relates to a semiconductor processing grinding wheel, which has abrasive grains and a binder for fixing the abrasive grains, and is used for processing workpieces made of semiconductor material, wherein the binder includes magnesium oxide and magnesium salt.

Description

Technical Field

[0001] The present invention relates to a semiconductor processing grinding wheel and a semiconductor processing tool used for processing a workpiece made of semiconductor such as a semiconductor wafer. Further, the present invention relates to a processing method using the semiconductor processing grinding wheel and a manufacturing method of semiconductor parts.

Background Art

[0002] Device chips mounted on electronic devices such as mobile phones and personal computers are manufactured by processing semiconductor wafers.

[0003] On one surface of a plate-shaped semiconductor wafer, a plurality of division planned lines (streets) are set in a lattice pattern, and devices such as IC (Integrated Circuit) and LSI (Large Scale Integration) are formed in each rectangular region partitioned by the division planned lines. By cutting the semiconductor wafer on which the devices are formed along each division planned line, the semiconductor wafer is divided into a plurality of device chips.

[0004] In recent years, in the manufacture of such device chips, thinning of the wafer has been carried out in order to reduce the size and weight of the chip. For example, in the manufacturing process of the device chips as described above, the entire wafer is thinned by grinding the back surface of the wafer on which the devices are formed on the surface with a grinding wheel.

[0005] The grinding wheel used for grinding the wafer includes abrasive grains and a binder, and is formed by fixing the abrasive grains with the binder. There are various types of binders used for grinding wheels. For example, Patent Document 1 discloses a type of grinding wheel called a vitrified bond grinding wheel formed by a binder mainly composed of glass such as silicon dioxide (SiO2).

[0006] In addition, a resin bond grinding wheel in which the binder contains resin, a metal bond grinding wheel in which the binder contains metal, etc. may be used for processing semiconductor parts.

[0007] By the way, each type of grinding wheel has its advantages, but also its disadvantages. For example, resin-bonded grinding wheels are easy to sharpen and maintain machining quality, but they are not very durable. Metal-bonded grinding wheels are very durable, but they have low self-sharpening ability and are prone to wear and clogging. Vitrified-bonded grinding wheels are hard and wear-resistant, but they are not very self-sharpening. Also, because vitrified-bonded grinding wheels are sintered at high temperatures during manufacturing, there are problems such as deterioration of abrasive grains and energy consumption due to heating. [Prior art documents] [Patent Documents]

[0008] [Patent Document 1] Japanese Patent Publication No. 2023-83679 [Overview of the project] [Problems that the invention aims to solve]

[0009] The object of the present invention is to provide a new type of semiconductor processing grinding wheel that can be used for processing articles having semiconductors as a material, a semiconductor processing tool using the same, a processing method, and a method for manufacturing semiconductor components. [Means for solving the problem]

[0010] According to one aspect of the present invention, a semiconductor processing grinding wheel is provided, which has abrasive grains and a binder for fixing the abrasive grains, and is used for processing a workpiece made of a semiconductor, wherein the binder contains magnesium oxide and a magnesium salt.

[0011] Preferably, the semiconductor processing grinding wheel is used for cutting the workpiece, grinding the workpiece, or polishing the workpiece.

[0012] According to another aspect of the present invention, a semiconductor processing tool is provided that includes the above-described semiconductor processing grinding wheel.

[0013] According to yet another aspect of the present invention, a processing method is provided for processing a workpiece using the above-described semiconductor processing grinding wheel, comprising: a preparation step of preparing the semiconductor processing grinding wheel; a support step of supporting the workpiece; and a processing step of processing the supported workpiece using the semiconductor processing grinding wheel.

[0014] Preferably, the processing step involves at least one of the following: cutting the workpiece, grinding the workpiece, or polishing the workpiece.

[0015] Preferably, in the processing step, water is supplied to at least one of the workpiece or the grinding wheel for semiconductor processing.

[0016] Preferably, in the processing step, the binder is brought into contact with the supplied water, thereby changing the pH of the water to between 8 and 14.

[0017] According to yet another aspect of the present invention, a method for manufacturing semiconductor components is provided, which involves manufacturing semiconductor components using the processing method described above. [Effects of the Invention]

[0018] The present invention provides a new type of abrasive wheel for semiconductor processing, which contains magnesia cement as a binder and can be used in semiconductor processing. Furthermore, the invention provides a semiconductor processing tool, a processing method, and a method for manufacturing semiconductor components using the same. [Brief explanation of the drawing]

[0019] [Figure 1] Figure 1 is a schematic perspective view showing the configuration of a grinding wheel. [Figure 2] Figure 2 is a schematic side view illustrating the grinding process of a workpiece using a grinding machine. [Figure 3] Figure 3 is a flowchart for explaining an example of a procedure related to a method for processing a workpiece and a method for manufacturing a semiconductor component. [Figure 4] Figure 4 is an exploded perspective view schematically showing the form of a cutting unit. [Figure 5] Figure 5 is a side view schematically showing the mode of cutting a workpiece by a cutting device.

Mode for Carrying Out the Invention

[0020] Embodiments of the present invention will be described with reference to the accompanying drawings. Figure 1 is a perspective view schematically showing the form of a semiconductor processing tool (grinding wheel) 2 equipped with a semiconductor processing grinding wheel 6 according to the present embodiment.

[0021] As shown in Figure 1, the grinding wheel 2, which is a semiconductor processing tool, includes a wheel base 4 formed of a metal such as stainless steel or aluminum, and a semiconductor processing grinding wheel 6.

[0022] The wheel base 4 is a component formed in an annular shape. The first surface 4a and the second surface 4b forming both ends in the axial direction of the annular wheel base 4 are formed parallel to each other. At the center of the wheel base 4, a circular opening 4c penetrating the wheel base 4 from the first surface 4a to the second surface 4b is formed along the axis of the wheel base 4. A groove (not shown) is provided along the circumferential direction on the second surface 4b, and a plurality of grinding wheels (semiconductor processing grinding wheels) 6 are arranged in an annular shape in the groove.

[0023] The semiconductor processing grinding wheel 6 will be described. The semiconductor processing grinding wheel 6 according to the present embodiment has a large number of abrasive grains and a binder for fixing the abrasive grains.

[0024] The abrasive grains are formed of, for example, diamond, CBN (Cubic Boron Nitride), etc. Note that the material, average particle size, shape, etc. of the abrasive grains can be appropriately selected according to the specifications of the semiconductor processing grinding wheel 6.

[0025] The semiconductor processing grinding wheel 6 is obtained, for example, by mixing the materials shown in the following composition example and hardening the binder material (materials other than abrasive grains; water, magnesium chloride, and magnesium oxide). The numerical values ​​are volume ratios. (Example composition) Abrasive grains 24: Magnesium chloride (MgCl2) 32: Water 31: Magnesium oxide (MgO) 13

[0026] A more specific procedure is as follows: Magnesium oxide and abrasive grains are mixed in an aqueous solution of magnesium chloride, and the mixture is poured into a mold. The magnesium chloride and magnesium oxide react with water, which is the binder material, and harden naturally in a period of time of, for example, 14 hours to 10 days. After hardening, when the hardened material is removed from the mold, a semiconductor processing grinding wheel 6 is obtained in which the abrasive grains are fixed to the binder.

[0027] The mold has a cavity with dimensions of, for example, a few millimeters to a few centimeters, and the semiconductor processing grinding wheel 6 is formed in the same shape as this internal space. For example, the cavity and the semiconductor processing grinding wheel 6 are formed in the shape of a rectangular parallelepiped approximately 4 mm × 20 mm × 5 mm.

[0028] The semiconductor processing grinding wheels 6 thus formed are attached to the wheel base 4, and a grinding wheel 2 as shown in Figure 1 is manufactured. The number of semiconductor processing grinding wheels 6 attached to one wheel base 4 is determined according to the size of the wheel base 4, etc. For example, 28 semiconductor processing grinding wheels 6 of the above dimensions are attached to a wheel base 4 with a diameter of approximately 200 mm, and 42 are attached to a wheel base 4 with a diameter of approximately 300 mm.

[0029] The material composition of the semiconductor processing grinding wheel 6 listed above is merely an example, and the type of material used for the binder, the content of each material, and the ratio of abrasive grains to the binder are not limited to the composition listed above. For example, regarding the content of each material, if the same materials as above are used, and the total volume of the semiconductor processing grinding wheel 6 including all the abrasive grains and binder materials is taken as 100, the abrasive grain content should be set appropriately within the range of 5 to 50 by volume, the magnesium chloride content within the range of 10 to 50 by volume, the water content within the range of 10 to 50 by volume, and the magnesium oxide content within the range of 5 to 50 by volume. More preferably, the abrasive grain content should be 15 to 35 by volume, the magnesium chloride content within the range of 20 to 40 by volume, the water content within the range of 20 to 40 by volume, and the magnesium oxide content within the range of 5 to 30 by volume.

[0030] The binder for the semiconductor processing grinding wheel 6 manufactured using the above materials and method is a material called magnesia cement. Magnesia cement is a material obtained by mixing magnesium oxide, water, and a magnesium salt and hardening the mixture. The hardened binder contains magnesium oxide and a magnesium salt.

[0031] In addition to magnesium chloride, other magnesium salts such as magnesium sulfate (MgSO4) in appropriate amounts, or other types of magnesium salts, can be used. The binder may contain only one type of magnesium salt, or multiple types of magnesium salts may be used as part of the binder material.

[0032] When a magnesium salt other than magnesium chloride is used as a binder, the amount of magnesium salt should be adjusted so that, if the magnesium salt is replaced with the same number of moles of magnesium chloride, the ratio of magnesium chloride to the total volume of the grinding wheel material falls within the range described above.

[0033] Furthermore, magnesium hydroxide (MgOH) can be used instead of magnesium oxide as a material for magnesia cement. Therefore, the binder material may contain magnesium hydroxide instead of magnesium oxide, or it may contain both magnesium oxide and magnesium hydroxide.

[0034] When magnesium hydroxide is used as a binder in place of or in addition to magnesium oxide, the amount of magnesium hydroxide should be adjusted so that, when magnesium hydroxide is replaced by the same number of moles of magnesium oxide, the ratio of magnesium oxide to the total volume of the grinding wheel material falls within the range described above.

[0035] In addition, other appropriate substances not listed above may be included in the semiconductor processing grinding wheel 6 as binder materials or for other purposes.

[0036] The hardening reaction of the binder material begins and proceeds upon mixing of the above-mentioned substances, and no processes such as sintering are required for hardening. Therefore, unlike vitrified bonds, glassy materials (such as silicon dioxide) are not included in the binder unless they are mixed separately.

[0037] The grinding wheel 2, equipped with the semiconductor processing grinding wheel 6 and wheel base 4 described above, is used, for example, by being attached to the grinding unit of a grinding device. Figure 2 is a schematic side view showing the grinding process of a workpiece 10 by the grinding device 8.

[0038] The workpiece 10 is an article that has a semiconductor as its material and is to be processed, for example, a wafer made of silicon. In addition, the workpiece 10 may contain a semiconductor as its material in part, or the entire workpiece 10 may be made of a semiconductor as its material.

[0039] The grinding device 8, which is a processing device, comprises a chuck table 12 for holding the workpiece 10 and a grinding unit 14 for grinding the workpiece 10 held on the chuck table 12.

[0040] The chuck table 12 is connected to a suction source (not shown), and by applying the negative pressure generated by the suction source to the workpiece 10 placed on its upper surface 12a, the chuck table 12 sucks the workpiece 10 and holds it on its upper surface 12a. In this way, the upper surface 12a of the chuck table 12 functions as a holding surface for the workpiece 10. The chuck table 12 is also capable of rotating around a rotation axis that intersects the upper surface 12a, by a rotation drive source (not shown).

[0041] The grinding unit 14 comprises a substantially cylindrical spindle 16, a housing 18 that accommodates the spindle 16, and a wheel mount 20 connected to the lower end of the spindle 16.

[0042] In the grinding apparatus 8, the chuck table 12 is mounted in a position where its upper surface (holding surface) 12a is generally aligned horizontally, and the spindle 16 is mounted on the grinding unit 14 such that its axial direction extends in a direction generally perpendicular to the upper surface of the chuck table 12. The orientation of the spindle 16's axis is generally aligned vertically. A rotational drive source, such as a motor (not shown), is connected to one end (upper end) of the spindle 16, and the operation of this rotational drive source causes the spindle 16 to rotate around an axis generally aligned vertically.

[0043] The grinding wheel 2 is fixed to the wheel mount 20 with the first surface 4a of the wheel base 4 in contact with the lower surface of the wheel mount 20. The second surface 4b of the wheel base 4, on which the semiconductor processing grinding wheel 6 is mounted, faces downward and faces the upper surface (holding surface 12a) of the chuck table 12.

[0044] A processing fluid supply unit 22, which is a nozzle, is provided above the upper surface (holding surface) 12a of the chuck table 12. During grinding, a liquid such as pure water is supplied from this processing fluid supply unit 22 to the upper surface of the workpiece 10 and the grinding wheel 2 as processing fluid. The processing fluid from the processing fluid supply unit 22 may be supplied to the upper surface of the workpiece 10, to the grinding wheel 2, or to both. In addition, the processing fluid supply unit may be provided in the grinding device 8 as a mechanism that supplies the processing fluid to the upper surface of the workpiece 10 or the grinding wheel 2 through a flow path (not shown) provided inside the grinding unit 14, rather than as a nozzle as shown in Figure 2.

[0045] Next, the procedure for grinding the workpiece 10 using the semiconductor processing grinding wheel 6 and grinding apparatus 8 described above will be explained. Figure 3 is a flowchart illustrating an example of the procedure for processing the workpiece 10 and manufacturing semiconductor components.

[0046] First, a semiconductor processing grinding wheel 6 is manufactured using the materials and procedures described above, and this semiconductor processing grinding wheel 6 is mounted on a wheel base 4 to produce a grinding wheel 2, which is a semiconductor processing tool (see Figure 1). This grinding wheel 2 is then mounted on a wheel mount 20 of a spindle 16 provided in a grinding unit 14 of a grinding device 8 (see Figure 2). In this way, the semiconductor processing grinding wheel 6 is prepared (preparation step S10).

[0047] Next, the workpiece 10 is supported by the chuck table 12 (support step S20). The workpiece 10 is placed on the holding surface 12a, and negative pressure is supplied to the workpiece 10 on the holding surface 12a from a suction source (not shown), causing the workpiece 10 to be attracted to and held by the holding surface 12a.

[0048] Grinding is performed on the workpiece 10 supported by the chuck table 12 using a semiconductor grinding wheel 6 (processing step S30; see Figure 2). The chuck table 12 and the grinding unit 14 are positioned relative to each other so that the semiconductor grinding wheel 6 is positioned above the workpiece 10, and the chuck table 12 rotates around a rotation axis that is roughly aligned vertically. Meanwhile, the spindle 16 rotates together with the grinding wheel 2 around a rotation axis that is roughly aligned vertically due to the operation of a rotation drive source (not shown). The semiconductor grinding wheel 6 attached to the grinding wheel 2 rotates in an annular trajectory.

[0049] From this position, the grinding unit 14 descends. When the semiconductor processing grinding wheel 6 comes into contact with the workpiece 10, the upper surface of the workpiece 10 is ground. Due to the grinding, the height of the upper surface of the workpiece 10 gradually decreases, and the grinding unit 14 descends further in accordance with this (grinding feed).

[0050] At this time, the workpiece 10 is ground by the abrasive grains, and the abrasive grains of the semiconductor processing grinding wheel 6 are gradually worn down. Simultaneously, the binder is also gradually worn down, causing the abrasive grains embedded in the binder to be exposed one after another. This process is called self-sharpening, and as a result, the grinding capacity of the semiconductor processing grinding wheel 6 is maintained at a certain level.

[0051] During grinding, machining debris and heat are generated from the workpiece 10 and the semiconductor grinding wheel 6, which are in contact and sliding against each other. Therefore, during the grinding process, a liquid such as pure water is supplied as a machining fluid from the machining fluid supply unit 22, which is a nozzle, to the upper surface of the workpiece 10 and the grinding wheel 2, and the machining debris and heat are removed by the machining fluid.

[0052] Once the workpiece 10 has been ground to the desired thickness, the grinding of the workpiece 10 is complete. After grinding, the workpiece 10, for example, a wafer, is subjected to further processing such as splitting or other treatments to manufacture semiconductor components such as chips.

[0053] In processing step S30, as described above, water (pure water) is supplied as a processing fluid to at least one of the workpiece 10 or the semiconductor processing grinding wheel 6. The supplied water mixes with the processing debris generated during the grinding process. The binder of the semiconductor processing grinding wheel 6 is magnesia cement, and when the processing debris generated by the wear of the binder comes into contact with water, the pH of the water becomes alkaline, with a pH of approximately 8 to 14 (for example, a pH of approximately 12, as shown in the results of a demonstration test conducted by the inventors of this application). This is thought to be due to the magnesium oxide contained in the binder dissolving in water to produce magnesium hydroxide (Mg(OH)2).

[0054] In other words, when a workpiece 10 is processed using a semiconductor processing grinding wheel 6 containing magnesia cement as a binder, if water is supplied as the processing fluid, the processing will ultimately be carried out with an alkaline processing fluid. This can result in several advantageous effects on the processing of the workpiece 10.

[0055] For example, if the processing waste generated during processing contains a substance that dissolves in an alkaline aqueous solution, the particles made of that substance will dissolve in the aqueous solution and be recovered into the solution. This reduces the amount of solid particles adhering to the workpiece 10 and surrounding equipment, thereby suppressing contamination of the workpiece 10 and surrounding equipment.

[0056] Furthermore, if the workpiece 10 contains substances that dissolve in alkaline aqueous solutions, the effect of etching its surface can also be expected. For example, during processing, the force applied from the semiconductor processing grinding wheel 6 may cause fine cracks or irregularities on the surface of the workpiece 10. By etching the surface of the workpiece 10 with an alkaline processing solution, these cracks and irregularities can be removed, potentially improving the strength and surface smoothness of the workpiece 10.

[0057] During processing, parts of the material that make up the surface of the workpiece 10 may break off and become particles, which can become foreign matter to the workpiece 10. In such cases, if the processing fluid is alkaline, its corrosive action can cause these particles to dissolve in the processing fluid or be easily removed from the surface of the workpiece 10.

[0058] Furthermore, as mentioned above, when manufacturing the semiconductor processing grinding wheel 6, processes such as high-temperature sintering are not required. The binder material hardens naturally simply by pouring the material mixture into a mold and leaving it to stand. Therefore, there is no need for significant energy consumption for heating, making it possible to manufacture grinding wheels inexpensively and with energy savings.

[0059] The workpiece 10, which is the object to be processed by the semiconductor processing grinding wheel 6 and is an article containing a semiconductor as a material, can be a variety of articles such as substrates, wafers, and ingots. However, when considering obtaining the above-mentioned effects with an alkaline processing solution, the semiconductor contained in the workpiece 10 is preferably a type of semiconductor that is particularly susceptible to corrosion by alkali. Specific examples of such semiconductors include silicon (Si), silicon carbide (SiC), germanium (Ge), gallium arsenide (GaAs), and gallium nitride (GaN).

[0060] In particular, when the workpiece contains silicon carbide as a semiconductor, vitrified bond grinding wheels have traditionally been mainly used for processing due to its hardness. However, vitrified bond grinding wheels have the disadvantage of low self-sharpening ability. The aforementioned semiconductor processing grinding wheel 6, which contains magnesia cement as a binder, allows for efficient processing while maintaining processing quality with high self-sharpening ability.

[0061] Grinding wheels manufactured by mixing magnesium oxide or magnesium hydroxide, an aqueous solution of a magnesium salt, and abrasive grains are a well-known technology, often referred to as magnesia cement grinding wheels. However, magnesia cement grinding wheels have not been used in the field of semiconductor processing until now. One possible reason for this is that magnesia cement, which is not sintered during manufacturing, has a lower abrasive grain retention capacity compared to vitrified bonds and metal bonds, resulting in a shorter grinding wheel lifespan.

[0062] However, in recent years, with the widespread availability of inexpensive and fine abrasive grains, running costs have not increased significantly even if the lifespan of the grinding wheel is short. Furthermore, as mentioned above, magnesia cement grinding wheels offer advantages such as the effect of making the processing fluid alkaline and energy saving. If these advantages outweigh the disadvantages, then the semiconductor processing grinding wheel 6 containing magnesia cement as a binder is considered to be a new type of grinding wheel that can be used for processing articles containing semiconductors as a material and is fully practical.

[0063] In addition, the above explanation described the case where the processing of the workpiece 10 is grinding. However, other processing methods using a similar semiconductor processing grinding wheel include polishing and cutting.

[0064] A polishing apparatus, which is a processing device used for polishing, is, for example, similar to the grinding apparatus 8 shown in Figure 2, and comprises a chuck table for holding a workpiece and a polishing unit as a processing unit for performing polishing on the workpiece held on the chuck table.

[0065] The polishing unit comprises a spindle to which a polishing pad, which serves as a tool for semiconductor processing, is mounted and which rotates together with the polishing pad. Polishing of the workpiece is performed by bringing the polishing pad into contact with the workpiece while rotating it. During the polishing process (processing step), water as a processing fluid is supplied from a processing fluid supply unit, such as a nozzle, to at least one of the workpiece or the polishing pad. The polishing pad is formed, for example, in the shape of a disc, using a semiconductor processing grinding wheel containing magnesia cement as a binder, similar to the semiconductor processing grinding wheel 6 described above.

[0066] The form of the cutting device, which is a processing device used for cutting, and the form of the cutting blade, which is a semiconductor processing tool attached to the cutting device, will also be described. Figure 4 is an exploded perspective view of the cutting unit 40, which schematically shows the form of the cutting blade 32 and the cutting unit 40 to which it is attached. Figure 5 is a schematic side view showing the manner in which the workpiece 10 is cut by the cutting device (processing device) 38.

[0067] The cutting blade 32 is, for example, a hub-type cutting blade (hub blade). The hub blade cutting blade 32 comprises an annular hub base 34 made of metal or the like, and a cutting edge 36 attached along the outer edge of the hub base. The cutting edge 36 is a semiconductor processing grinding wheel formed of abrasive grains made of diamond or the like and a binder containing magnesia cement, but unlike the semiconductor processing grinding wheel 6 shown in Figures 1 and 2, it is formed in an annular shape. The hub base 34, which forms the central part of the cutting blade 32, is provided with a circular opening 34a that penetrates the region including the center of the hub base 34 in the axial direction.

[0068] Furthermore, a washer-type cutting blade (washer blade) can also be used as the cutting blade. A washer blade does not have a hub base and consists only of an annular cutting edge.

[0069] The cutting device 38, which is a processing device for cutting a workpiece 10, comprises a cutting unit 40, which is a processing unit, and a chuck table 54. The cutting unit 40 has a cylindrical housing 42, which houses a cylindrical spindle 44 arranged horizontally. One end (tip) of the spindle 44 is exposed to the outside of the housing 42, and a rotational drive source (not shown), such as a motor, is connected to the other end (base) of the spindle 44. When the rotational drive source is driven, the cylindrical spindle 44 rotates around its axis.

[0070] A blade mount 46 is attached to the tip of the spindle 44. The blade mount 46 is fixed to the tip of the spindle 44, for example by fastening bolts, and rotates integrally with the spindle 44.

[0071] The blade mount 46 comprises a disc-shaped flange portion 48 and a cylindrical support shaft 50 protruding from the center of the surface of the flange portion 48, to which the cutting blade 32 is attached. When the cutting blade 32 is attached to the blade mount 46, the outer circumference of the flange portion 48 is in contact with the back side of the cutting blade 32, and the support shaft 50 fits into the opening 34a of the hub base 34.

[0072] A screw groove (not shown) is formed on the outer circumferential surface of the tip of the support shaft 50, and an annular nut 52 is fastened to this screw groove. This fixes the cutting blade 32 to the blade mount 46.

[0073] As shown in Figure 5, a chuck table 54 is provided below the cutting unit 40 in the cutting apparatus 38. The chuck table 54 is connected to a suction source (not shown), and the chuck table 54 holds the workpiece 10 on its upper surface 54a by applying the negative pressure generated by the suction source to the workpiece 10 placed on its upper surface 54a. The chuck table 54 is also capable of rotating around a rotation axis that intersects the upper surface 54a, by a rotation drive source (not shown).

[0074] Above the upper surface (holding surface) 54a of the chuck table 54, there is a processing fluid supply unit 56, which is a nozzle for spraying water as a processing fluid.

[0075] During the cutting process (machining step), the workpiece 10 is held on the holding surface 54a of the chuck table 54, and the spindle 44 attached to the cutting unit 40 rotates together with the cutting blade 32 by the operation of a rotational drive source (not shown). The spindle 44 and the chuck table 54 move relative to each other by a moving mechanism (not shown). The cutting edge 36 of the cutting blade 32 cuts into the workpiece 10 on the chuck table 54, and the workpiece 10 is cut as shown in Figure 5. A liquid such as pure water is sprayed from the machining fluid supply unit 56 and supplied to the cutting blade 32 and the workpiece 10 as machining fluid.

[0076] The depth of cut of the cutting blade 32 into the workpiece 10 can be adjusted by the distance between the spindle 44 and the chuck table 54 during cutting. When the cutting edge 36 partially cuts into the workpiece 10 in the thickness direction, a cutting groove is formed on the surface of the workpiece 10.

[0077] When the cutting blade 36 cuts into the entire thickness of the workpiece 10, the workpiece 10 is cut and divided at that point (full cut). In this case, in processing step S30 (see Figure 3), the workpiece 10 is cut and divided at the same time. When a full cut is performed, it is advisable to attach a protective member (support member) such as resin tape to the workpiece 10 to prevent the cutting blade 32 from cutting into the chuck table 54 and to facilitate handling of the divided workpiece 10.

[0078] During machining, processing debris originating from the binder containing magnesia cement is generated from the cutting edge 36 of the cutting blade 32. This debris mixes with the water supplied as the processing fluid, making the processing fluid alkaline. The alkaline processing fluid provides a cleaning effect by dissolving the processing debris as described above. If the workpiece 10 contains a semiconductor that dissolves in alkali, an etching effect can also be obtained.

[0079] As described above, semiconductor processing grinding wheels containing magnesia cement as a binder can be used for various processing applications other than grinding.

[0080] Furthermore, the structures, methods, etc., according to the embodiments described above are not limited to those embodiments and may be modified as appropriate without departing from the scope of the object of the present invention. [Explanation of symbols]

[0081] 2: Tools for semiconductor processing (grinding wheels) 4: Wheel base, 4a: 1st surface, 4b: 2nd surface, 4c: Opening 6: Grinding wheels for semiconductor processing 8: Processing equipment (grinding equipment) 10: Workpiece 12: Chuck table, 12a: Holding surface (top surface) 14: Grinding unit, 16: Spindle, 18: Housing, 20: Wheel mount 22: Machining fluid supply section 32: Semiconductor processing tools (cutting blades) 34: Hub base, 34a: Opening, 36: Grinding wheel for semiconductor processing (cutting edge) 38: Processing equipment (cutting equipment) 40: Cutting unit, 42: Housing, 44: Spindle, 46: Blade mount 48: Flange section, 50: Support shaft, 52: Nut 54: Chuck table, 54a: Holding surface (top surface) 56: Processing fluid supply section

Claims

1. A semiconductor processing grinding wheel comprising abrasive grains and a binder for fixing the abrasive grains, used for processing workpieces made of semiconductor material, The binder is characterized by containing magnesium oxide and a magnesium salt, and is used in the semiconductor processing grinding wheel.

2. A semiconductor processing grinding wheel according to claim 1, used in at least one of the following processes: cutting the workpiece, grinding the workpiece, or polishing the workpiece.

3. A semiconductor processing tool comprising a semiconductor processing grinding wheel according to claim 1 or 2.

4. A machining method for machining a workpiece using a semiconductor machining grinding wheel as described in claim 1, Preparation step for preparing the grinding wheel for semiconductor processing, A support step for supporting the workpiece, A machining step of machining the supported workpiece using the semiconductor machining grinding wheel, A processing method equipped with [a specific feature / equipment].

5. The processing method according to claim 4, wherein the processing step includes at least one of cutting, grinding, or polishing the workpiece.

6. The machining method according to claim 4, wherein in the machining step, water is supplied to at least one of the workpiece or the semiconductor machining grinding wheel.

7. The processing method according to claim 6, wherein in the processing step, the binder is brought into contact with the supplied water to change the pH of the water to pH 8 or higher and pH 14 or lower.

8. A method for manufacturing a semiconductor component, comprising manufacturing a semiconductor component using the processing method described in any one of claims 4 to 7.

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