Solar cell submodule, solar cell module, and method for manufacturing a solar cell submodule

Abstract

To provide a see-through type solar cell with high photoelectric conversion efficiency per unit area. [Solution] A solar cell submodule 1 according to one aspect of the present invention comprises a substrate layer 11, a first electrode layer 12, a photoelectric conversion layer 13, and a second electrode layer 14 in this order, and has a first separation groove 21 formed to cut through the first electrode layer 12, a second separation groove 22 formed to cut through the photoelectric conversion layer 13 and filled with the second electrode layer 14, and a third separation groove formed to cut through the photoelectric conversion layer 13 and the second electrode layer 14, wherein the second separation groove and the third separation groove are formed adjacent to each other without the photoelectric conversion layer in between, and the width of the third separation groove is greater than the width of the second separation groove.

Description

Technical Field

[0001] The present invention relates to a solar cell sub-module, a solar cell module, and a method for manufacturing a solar cell sub-module.

Background Art

[0002] A solar cell sub-module formed by electrically connecting a plurality of solar cell sub-cells in series on a single substrate is known. By modularizing the solar cell, the effective area decreases because the area between the sub-cells becomes an inactive area, but particularly, the resistance loss at the electrodes on the light-receiving surface side can be reduced. If the solar cell is appropriately modularized, the effect of improving the photoelectric conversion efficiency due to reducing the resistance loss exceeds the effect of reducing the effective area.

[0003] A solar cell sub-module can be manufactured by a method of forming a plurality of solar cell sub-cells electrically connected in series by performing, in this order, a step of laminating a first electrode layer on a substrate, a step of forming a first separation groove for cutting the first electrode layer, a step of laminating a photoelectric conversion layer, a step of forming a second separation groove for cutting the photoelectric conversion layer, a step of laminating a second electrode layer, and a step of forming a third separation groove for cutting the photoelectric conversion layer and the second electrode layer (see, for example, Patent Document 1).

[0004] In addition, for example, assuming that a solar cell is disposed on a window or the like for use, a through-sheet type solar cell that transmits a certain amount of light to the back side has also been studied. As an example, a solar cell has been proposed in which the first electrode layer, the photoelectric conversion layer, and the second electrode layer are cut perpendicular to the separation groove, and a light transmission groove for transmitting light to the back side is formed (see, for example, Patent Document 2).

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Summary of the Invention

[0006] When light-transmitting grooves are formed in a solar cell, the effective area decreases, and consequently, the amount of photoelectric conversion decreases. As mentioned above, the effective area also decreases when solar cells are modularized. For this reason, the object of the present invention is to provide a see-through type solar cell submodule and solar cell module that have high photoelectric conversion efficiency per unit area. [Means for solving the problem]

[0007] A solar cell submodule according to one aspect of the present invention comprises a substrate layer, a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order, and includes a first separation groove formed to cut the first electrode layer, a second separation groove formed to cut the photoelectric conversion layer and filled with the second electrode layer, and a third separation groove formed to cut the photoelectric conversion layer and the second electrode layer, wherein the second separation groove and the third separation groove are formed adjacent to each other without the photoelectric conversion layer in between, and the width of the third separation groove is greater than the width of the second separation groove.

[0008] In the solar cell submodule described above, the width of the third separation groove may be 1.1 times or more and 3 times or less the width of the second separation groove.

[0009] A solar cell module according to one aspect of the present invention comprises the above-described solar cell submodule and a crystalline silicon photoelectric conversion submodule laminated on the back side of the solar cell submodule, wherein the solar cell submodule and the crystalline silicon photoelectric conversion submodule each independently output power to the outside.

[0010] A solar cell submodule manufacturing method according to another aspect of the present invention comprises the steps of: laminating a first electrode layer on a substrate layer; forming a first separation groove that cuts the first electrode layer by laser irradiation; laminating a photoelectric conversion layer on the first electrode layer; forming a second separation groove that cuts the photoelectric conversion layer by laser irradiation; laminating a second electrode layer on the photoelectric conversion layer; and forming a third separation groove that cuts the photoelectric conversion layer and the second electrode layer by laser irradiation, wherein in the step of forming the third separation groove, a laser with a spot diameter larger than the spot diameter of the laser irradiated in the step of forming the second separation groove is irradiated so as to partially overlap the second separation groove.

[0011] In the solar cell submodule manufacturing method described above, the steps of forming the second separation groove and forming the third separation groove may be irradiated with a laser having a wavelength that does not remove the material of the first electrode layer. [Effects of the Invention]

[0012] According to the present invention, it is possible to provide a see-through type solar cell submodule and solar cell module with high photoelectric conversion efficiency per unit area. [Brief explanation of the drawing]

[0013] [Figure 1] This is a schematic plan view showing the configuration of a solar cell according to one embodiment of the present invention. [Figure 2] Figure 1 is a magnified view of a section of the solar cell along line XX. [Figure 3] This flowchart shows the steps for a solar cell manufacturing method according to one embodiment of the present invention. [Figure 4] This is a schematic cross-sectional view showing the configuration of a solar cell module according to one embodiment of the present invention. [Modes for carrying out the invention]

[0014] Embodiments of the present invention will be described below with reference to the drawings. For convenience, hatching and component reference numerals may be omitted in some cases; in such cases, refer to other drawings. Also, the dimensions of various components in the drawings have been adjusted for ease of viewing.

[0015] The solar cell submodule 1 comprises a substrate layer 11, a first electrode layer 12, a photoelectric conversion layer 13, and a second electrode layer 14 in this order. The solar cell submodule 1 has a plurality of first separation grooves 21 formed to cut through the first electrode layer 12, a plurality of second separation grooves 22 formed to cut through the photoelectric conversion layer 13 and filled with the second electrode layer 14, and a plurality of third separation grooves 23 formed to cut through the photoelectric conversion layer 13 and the second electrode layer 14. In the solar cell submodule 1, the area between the third separation groove 23 and the first separation groove 21, without the second separation groove 22 in between, is a subcell region C, each of which is a single subcell that independently performs photoelectric conversion. The area between the subcell regions C, where the first separation groove 21, the second separation groove 22, and the third separation groove 23 exist, is an internal connection region E that electrically connects two adjacent subcell regions C in series. The area further outside the internal connection regions E at both ends is an external connection region T used to connect wiring that outputs power from the solar cell submodule 1 to the outside.

[0016] The base layer 11 is a structural member that ensures the strength of the solar cell submodule 1. The base layer 11 can be formed from a transparent material such as a resin like polyimide, polyamide, or polyethylene terephthalate, or glass. Alternatively, the base layer 11 may be another photoelectric converter (bottom cell), such as a crystalline silicon solar cell. When the base layer 11 is a bottom cell, the solar cell submodule 1 is used with light incident from the side of the second electrode layer 14, but when the base layer 11 is formed from a transparent material, light may be incident from either side.

[0017] The first electrode layer 12 collects charges of one polarity among the photo carriers (holes and electrons) generated in the photoelectric conversion layer 13 and outputs them to the adjacent sub-cell region C or to the outside. In the present embodiment, the first electrode layer 12 is a positive electrode that collects holes. Also, in the present embodiment, the first electrode layer 12 can be formed of a transparent conductive oxide (TCO: Transparent Conductive Oxide) having conductivity and light transmissivity, a semiconductor thin layer, or the like. As the transparent conductive oxide forming the first electrode layer 12, for example, indium oxide, tin oxide, zinc oxide, titanium oxide, and their composite oxides can be used. Among these, indium-based composite oxides mainly composed of indium oxide are preferable. From the viewpoints of high conductivity and transparency, indium oxide is particularly preferable. Further, in order to ensure reliability or higher conductivity, it is preferable to add a dopant to the indium oxide. Examples of the dopant include Sn, W, Zn, Ti, Ce, Zr, Mo, Al, Ga, Ge, As, Si, S, etc. As a particularly suitable example, ITO (Indium Tin Oxide) in which tin is added to indium oxide is widely known. Also, when the solar cell sub-module 1 receives light from the side of the second electrode layer 14, the first electrode layer 12 may have a metal layer containing, for example, copper in order to reduce the electrical resistance.

[0018] As the lower limit of the thickness of the first electrode layer 12, 5 nm is preferable, and 10 nm is more preferable. On the other hand, as the upper limit of the thickness of the first electrode layer 12, 300 nm is preferable, and 200 nm is more preferable. By setting the thickness of the first electrode layer 12 to be not less than the lower limit, the electrical resistance can be reduced to improve the photoelectric conversion efficiency. Further, by setting the thickness of the first electrode layer 12 to be not more than the above condition, the light absorption in the first electrode layer 12 can be suppressed, and the amount of light transmitted to the back side of the solar cell sub-module 1 can be increased. The first electrode layer 12 may have a multilayer structure such as a laminated structure of a polycrystalline ITO layer and an amorphous ITO layer, for example. Further, in order to improve the formability of the photoelectric conversion layer 13, the first electrode layer 12 is preferably subjected to a surface treatment such as ozone treatment, and may have a multilayer structure having a layer of a p-type oxide semiconductor mainly composed of, for example, nickel oxide, niobium oxide, etc. on the surface.

[0019] The photoelectric conversion layer 13 absorbs incident light to generate photo carriers, selectively transfers charges of one polarity to the first electrode layer 12, and selectively transfers charges of the other polarity to the second electrode layer 14. The photoelectric conversion layer 13 may be configured to include a perovskite layer 131 that absorbs incident light to generate photo carriers, a first charge transport layer 132 that selectively allows charges of one polarity to pass through from the perovskite layer 131, and a second charge transport layer 133 that selectively allows charges of the other polarity to pass through from the perovskite layer 131. Further, although not shown, the photoelectric conversion layer 13 may have an additional layer such as a passivation layer that suppresses the recombination of photo carriers at the interface of the perovskite layer 131, for example.

[0020] The perovskite layer 131 contains a perovskite compound that performs photoelectric conversion, absorbing incident light and generating photocarriers. The perovskite compound contained in the perovskite layer 131 may be a compound represented by ABX3, which includes an organic atomic group A containing at least one of monovalent organic ammonium ions and amidinium-based ions, a metal atom B that generates a divalent metal ion, and a halogen atom X containing at least one of iodide ions I, bromide ions Br, chloride ions Cl, and fluoride ions F. Furthermore, substituting part or all of the organic atomic group A with an alkali metal Am has also been considered, and such perovskite compounds are not excluded from the present invention.

[0021] Examples of organic atomic group A include methylammonium MA (CH3NH3) and formamidinium FA (CH3N2). Examples of alkali metal Am include potassium K, cesium Cs, and rubidium Rb. Among these, cesium Cs and rubidium Rb are preferred as alkali metal Am when durability and water resistance of the solar cell submodule 1 are important, and cesium Cs is particularly preferred from the viewpoint of cost and availability. Examples of metal atom B include lead Pb and tin Sn. When the power generation efficiency of the solar cell submodule 1 is important, it is preferable that metal atom B is mainly lead. The lower limit of the lead content in metal atom B is preferably 50% by weight, more preferably 80% by weight, and even more preferably 90% by weight, in order to achieve the desired performance. On the other hand, when the environmental impact of lead is important, it is preferable that metal atom B is mainly tin Sn. The lower limit of the tin content in metal atom B is preferably 50% by weight, more preferably 80% by weight, and particularly preferably 90% by weight, in order to achieve the desired performance. The halogen atom X is preferably at least one of iodide I, bromide Br, and chloride Cl.

[0022] Specifically, preferred perovskite compounds include, for example, methylammonium lead halides (MAPbX3) such as MAPbI3, MAPbBr3, and MAPbCl3, and formamidinium lead halides (FAPbX3) such as FAPbI3, FAPbBr3, and FAPbCl3. Note that the halogen atom X may contain multiple types, and the organic atomic group A may contain both methylammonium and formamidinium. y MA 1-y PbX3 may also be used. Furthermore, if it contains the alkali metal Am, Am y FA z MA 1-y-z PbIX, Am y FA 1-y Examples include PbIX. Am may be a single type of Cs, Rb, or K, or it may contain multiple types (where y and z are any positive integers).

[0023] The thickness of the perovskite layer 131 is preferably between 100 nm and 1000 nm, although this depends on the forming material and other factors, in order to increase the light absorption rate while minimizing the distance the generated charge travels.

[0024] The first charge transport layer 132 is a layer that allows the first polarity charge generated in the perovskite layer 131 to pass through, and in this embodiment, a hole transport layer (HTL) that transfers holes to the first electrode layer 12 is intended. The main material of the first charge transport layer 132, which is a hole transport layer, is preferably a material whose highest occupied orbital is close to the valence band of the perovskite compound that performs photoelectric conversion, in order to facilitate the transfer of holes, and is also preferably a material whose lowest unoccupied orbital is smaller than the conduction band in order to block electrons. The main material of the specific first charge transport layer 132 may be metal oxides such as nickel oxide (NiO) and copper oxide (Cu2O), or organic materials that form self-assembled monolayers (SAMs) such as 2PACz ([2-(9H-Carbazol-9-yl)ethyl]phosphonic acid), MeO-2PACz ([2-(3,6-Dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid), Me-4PACz ([4-(3,6-Dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid), DMAcPA ((4-(2,7-dibromo-9,9-dimethylacridin-10(9H)-yl)butyl)phosphonic acid), such as PTAA (poly(triaryl amine)) and Spiro-MeOTAD ([2,2',7,7'-Tetrakis(N,N Examples of organic substances include [-di-p-methoxyphenylamino)-9,9'-spirobifluorene]). The first charge transport layer 132 may also have a multilayer structure.

[0025] The thickness of the first charge transport layer 132 can vary greatly depending on its material, the composition of adjacent layers, etc., but can be, for example, between 1 nm and 200 nm, and especially when formed from a material that forms a self-assembled monolayer, it can be the thickness of a single layer or several layers of material molecules.

[0026] The second charge transport layer 133 is a layer that allows the second polar charge generated in the perovskite layer 131 to pass through, and in this embodiment, an electron transport layer (ETL) that transfers electrons to the second electrode layer 14 is intended. The second charge transport layer 133, which is the electron transport layer, can be formed from a material mainly composed of, for example, fullerene. Examples of fullerenes include C60, C70, their hydrides, oxides, metal complexes, alkyl groups, etc., derivatives to which such as PCBM ([6,6]-Phenyl-C61-Butyric Acid Methyl Ester) can be added. Furthermore, a hole-blocking layer of pasocuproine (BCP), lithium fluoride (LiF), tin oxide (SnO2), aluminum-doped zinc oxide (ZnO), or titanium oxide (TiO2) may be included between the second charge transport layer 133 and the second electrode layer 14. The inorganic oxide layer may be doped with another metal material.

[0027] The thickness of the second charge transport layer 133 can vary greatly depending on its material, the composition of adjacent layers, etc., but it can be, for example, between 3 nm and 50 nm.

[0028] The second electrode layer 14 is an electrode paired with the first electrode layer 12, and in this embodiment, it is the negative electrode. The second electrode layer 14 is formed from the same transparent conductive oxide as the first electrode layer 12. Furthermore, when the solar cell submodule 1 receives light from the side of the first electrode layer 12, the second electrode layer 14 may have a metal layer containing, for example, copper, to reduce electrical resistance.

[0029] The lower limit of the thickness of the second electrode layer 14 is preferably 10 nm, and more preferably 20 nm. On the other hand, the upper limit of the thickness of the second electrode layer 14 is preferably 300 nm, and more preferably 200 nm. By making the thickness of the second electrode layer 14 above the lower limit, the current collection resistance can be sufficiently reduced. Furthermore, by making the thickness of the second electrode layer 14 below the upper limit, the formation of the third separation groove 23 becomes easier.

[0030] The first separation groove 21 separates the first electrode layer 12 between the subcell regions C. The first separation groove 21 is filled with a first charge transport layer 132 to prevent short circuits between the subcell regions C. The width of the first separation groove 21 is preferably 10 μm to 200 μm, more preferably 20 μm to 150 μm, and particularly preferably 50 μm to 100 μm, considering that it will be formed by laser ablation as described later. This ensures reliable separation between the subcell regions C and secures the effective area of ​​the subcell regions C.

[0031] The second separation groove 22 separates the photoelectric conversion layer 13 between subcell regions C. The second separation groove 22 is formed adjacent to and parallel to the first separation groove 21, and may partially overlap with the first separation groove 21. The second separation groove 22 is also filled with the second electrode layer 14 to electrically connect the first electrode layer 12 and the second electrode layer 14. The width of the second separation groove 22 may be the same as the width of the first separation groove 21.

[0032] The third separation groove 23 separates the photoelectric conversion layer 13 and the second electrode layer 14 between the subcell regions C. The third separation groove 23 is formed adjacent to the second separation groove 22 without passing through the photoelectric conversion layer 13. The width of the third separation groove 23 is greater than the width of the second separation groove 22. Specifically, the width of the third separation groove 23 is preferably 1.1 to 3 times the width of the second separation groove 22, and more preferably 1.2 to 2 times. Specifically, the width of the third separation groove 23 is preferably 15 μm to 500 μm, more preferably 50 μm to 200 μm, and particularly preferably 100 μm to 150 μm. By making the width of the third separation groove 23 greater than the lower limit, it becomes easier to form the third separation groove 23 without leaving the photoelectric conversion layer 13 between it and the second separation groove 22. Furthermore, by setting the width of the third separation groove 23 to less than or equal to the upper limit, it becomes possible to form the third separation groove 23 with a single laser irradiation pass.

[0033] As described above, the solar cell submodule 1 allows light to pass through the third separation groove 23 to the back side (opposite side from the light source) by increasing the width of the third separation groove 23. Furthermore, because the second separation groove 22 and the third separation groove 23 of the solar cell submodule 1 are adjacent to each other without the photoelectric conversion layer 13 in between, no inactive region is formed between the second separation groove 22 and the third separation groove 23, and the effective area can be increased, resulting in a relatively high photoelectric conversion efficiency.

[0034] The solar cell submodule 1 can be manufactured by one embodiment of the solar cell submodule manufacturing method according to the present invention, as shown in Figure 3.

[0035] The solar cell submodule manufacturing method according to this embodiment comprises the steps of: laminating a first electrode layer 12 onto a substrate layer 11 (S1: first electrode layer lamination step); forming a first separation groove 21 that cuts the first electrode layer 12 by laser irradiation (S2: first separation groove formation step); laminating a photoelectric conversion layer 13 onto the first electrode layer 12 (S3: photoelectric conversion layer lamination step); forming a second separation groove 22 that cuts the photoelectric conversion layer 13 by laser irradiation (S4: second separation groove formation step); laminating a second electrode layer 14 onto the photoelectric conversion layer 13 (S5: second electrode layer lamination step); and forming a third separation groove 23 that cuts the photoelectric conversion layer 13 and the second electrode layer 14 by laser irradiation (S6: third separation groove formation step).

[0036] In the first electrode layer lamination process of S1, the first electrode layer 12 is laminated onto the entire main surface of one of the substrate layers 11. The first electrode layer 12 can be laminated onto the substrate layer 11 by methods such as sputtering or vacuum deposition.

[0037] In the first separation groove formation step of S2, multiple first separation grooves 21 are formed by removing the first electrode layer 12 in multiple parallel linear shapes by laser ablation. An infrared laser with a high absorption rate by the first electrode layer 12 is preferably used as the laser irradiated in the first separation groove formation step. The spot diameter of the laser irradiated in the first separation groove formation step can be 10 μm to 200 μm. While it is preferable to perform laser irradiation in a single pass, multiple laser passes may be performed depending on conditions such as the thickness of the first electrode layer 12 and the laser spot diameter.

[0038] In the photoelectric conversion layer formation step S3, a photoelectric conversion layer 13 (first charge transport layer 132, perovskite layer 131, and second charge transport layer 133) is laminated onto the first electrode layer 12 on which the first separation groove 21 is formed. The first charge transport layer 132, which is formed from inorganic material, can be formed by methods such as sputtering or vacuum deposition. The first charge transport layer 132, which contains organic material, can be formed by methods such as coating and drying of an organic solution. The perovskite layer 131 can be formed by methods such as the sol-gel method, which synthesizes a perovskite compound in a liquid phase coating film, or the coating method, which involves coating a solution containing a pre-synthesized perovskite compound. Alternatively, the first charge transport layer 132 and the perovskite layer 131 may be formed simultaneously by coating a solution containing the organic material that forms the first charge transport layer 132 and the perovskite compound or its precursor that forms the perovskite layer 131. The second charge transport layer 133 can be formed by methods such as the sol-gel method or coating method when using organic materials such as fullerenes, or by methods such as sputtering or vacuum deposition when using inorganic materials.

[0039] In the second separation groove formation step of S4, multiple second separation grooves 22 are formed by removing the photoelectric conversion layer 13 in multiple parallel linear shapes by laser ablation. Preferably, the laser used in the second separation groove formation step has a wavelength that selectively removes the photoelectric conversion layer 13 but does not remove the first electrode layer 12. Specifically, in the second separation groove formation step, a green laser with a relatively high absorption rate by the perovskite layer 131 and a relatively low absorption rate by the first electrode layer 12 can be used. The spot diameter of the laser used in the second separation groove formation step can be 10 μm to 200 μm. In the second separation groove formation step as well, it is preferable to perform the laser irradiation in a single pass.

[0040] In the second electrode layer lamination process of S5, the second electrode layer 14 is laminated over the entire surface of the laminate of the base layer 11, the first electrode layer 12, and the photoelectric conversion layer 13 on the side where the second separation groove 22 is formed. Therefore, the second electrode layer 14 is laminated so as to contact the first electrode layer 12 at the back of the second separation groove 22. The second electrode layer 14 can be laminated by methods such as sputtering, vacuum deposition, or plating.

[0041] In the third separation groove formation step of S6, multiple third separation grooves 23 are formed by removing the photoelectric conversion layer 13 and the second electrode layer 14 in multiple parallel lines by laser ablation. In the third separation groove formation step, a laser with a spot diameter larger than that of the laser irradiated in the second separation groove formation step is irradiated so as to partially overlap with the second separation groove 22. In the third separation groove formation step, it is preferable to use a laser with a wavelength that selectively removes the photoelectric conversion layer 13 and does not remove the first electrode layer 12, similar to the second separation groove formation step, so as not to remove the second electrode layer 14 that is filled in the second separation groove 22. Note that a laser with such a wavelength cannot directly ablate the second electrode layer 14 which is formed from the same material as the first electrode layer 12, but by ablating the photoelectric conversion layer 13 directly beneath it, the second electrode layer 14 above it can also be lifted off. By irradiating with such a laser, the second separation groove 22 and the third separation groove 23 can be formed side by side without any gaps between them, while reliably separating the cell C. In the third separation groove formation step, the spot diameter of the laser used for irradiation can be 15 μm to 300 μm. In the third separation groove formation step, it is preferable to perform the laser irradiation in a single pass.

[0042] As described above, in the solar cell submodule manufacturing method of this embodiment, in the third separation groove formation step, a laser with a spot diameter larger than the spot diameter of the laser irradiated in the second separation groove formation step is irradiated so as to partially overlap with the second separation groove 22 to form the third separation groove 23. As a result, the third separation groove 23 can be formed without leaving the photoelectric conversion layer 13 between it and the second separation groove 22 and having a large width. Therefore, the solar cell submodule manufacturing method of this embodiment can manufacture a see-through type solar cell submodule 1 with relatively high photoelectric conversion efficiency and high light transmittance.

[0043] Figure 4 shows the configuration of one embodiment of the solar cell module M according to the present invention. The solar cell module M comprises the solar cell submodule 1 described above, a crystalline silicon photoelectric conversion submodule 200 disposed on the back side of the solar cell submodule 1, a surface protective material 300 disposed on the front side of the solar cell submodule 1, an insulating member 400 disposed between the solar cell submodule 1 and the crystalline silicon photoelectric conversion submodule 200, a back surface protective material 500 disposed on the back side of the crystalline silicon photoelectric conversion submodule 200, and a sealing material 600 that fills the space between the surface protective material 300 and the insulating member 400 and between the insulating member 400 and the back surface protective material 500, that is, the space around the solar cell submodule 1 and the space around the crystalline silicon photoelectric conversion submodule 200. A pair of first lead wires W1 extend outward from the solar cell submodule 1, and a pair of second lead wires W2 extend outward from the crystalline silicon photoelectric conversion submodule 200. As a result, the solar cell submodule 1 and the crystalline silicon photoelectric conversion submodule 200 each output power to the outside independently.

[0044] The crystalline silicon photoelectric conversion submodule 200 is formed from one or more crystalline silicon photoelectric conversion cells and absorbs light transmitted through the solar cell submodule 1 to perform photoelectric conversion. The surface protective material 300 is formed from a transparent plate material and protects the solar cell submodule 1. The insulating member 400 is formed from a transparent film or sheet and prevents short circuits between the solar cell submodule 1 and the crystalline silicon photoelectric conversion submodule 200. The back protective material 500 is formed from a plate material, film or sheet and protects the crystalline silicon photoelectric conversion submodule 200. The sealing material is formed from a transparent resin composition and prevents moisture and other substances that could degrade the solar cell submodule 1 and the crystalline silicon photoelectric conversion submodule 200 from entering.

[0045] Although embodiments of the present invention have been described above, the present invention is not limited to the embodiments described above, and various modifications and variations are possible. For example, the solar cell according to the present invention may have further components such as an anti-reflective film or a protective film, and may have further grooves formed perpendicular to the third separation groove and intended solely for light transmission. [Explanation of symbols]

[0046] 1. Solar cell submodule 11 Base material layer 12 1st electrode layer 13 Photoelectric conversion layer 131 Perovskite layer 132 First charge transport layer 133 Second charge transport layer 14 Second electrode layer 21 1st separation groove 22 2nd separation groove 23 Third separation groove 200 Crystalline Silicon Photoelectric Conversion Submodule 300 Surface protection material 400 Insulating material 500 Backing protective material 600 sealing material C Subcell Area E Internal connection area M Solar cell module T External connection area W1 1st leader line W2 Second Lead Line

Claims

1. The substrate layer, first electrode layer, photoelectric conversion layer, and second electrode layer are provided in this order. A first separation groove formed to cut through the first electrode layer, A second separation groove is formed to cut through the photoelectric conversion layer and is filled with the second electrode layer, A third separation groove is formed to cut the photoelectric conversion layer and the second electrode layer, It has, The second separation groove and the third separation groove are formed adjacent to each other without the photoelectric conversion layer in between. A solar cell submodule in which the width of the third separation groove is greater than the width of the second separation groove.

2. The solar cell submodule according to claim 1, wherein the width of the third separation groove is 1.1 times or more and 3 times or less the width of the second separation groove.

3. A solar cell submodule according to claim 1 or 2, A crystalline silicon photoelectric conversion submodule is stacked on the back side of the aforementioned solar cell submodule, Equipped with, The solar cell submodule and the crystalline silicon photoelectric conversion submodule each independently output power to the outside, forming a solar cell module.

4. A step of laminating a first electrode layer onto a substrate layer, A step of forming a first separation groove that cuts the first electrode layer by laser irradiation, The process of laminating a photoelectric conversion layer onto the first electrode layer, A step of forming a second separation groove that cuts the photoelectric conversion layer by laser irradiation, The process of laminating a second electrode layer onto the aforementioned photoelectric conversion layer, A step of forming a third separation groove that cuts the photoelectric conversion layer and the second electrode layer by laser irradiation, Equipped with, A method for manufacturing a solar cell submodule, wherein, in the step of forming the third separation groove, a laser with a spot diameter larger than the spot diameter of the laser irradiated in the step of forming the second separation groove is irradiated so as to partially overlap with the second separation groove.

5. The solar cell submodule manufacturing method according to claim 4, wherein in the steps of forming the second separation groove and forming the third separation groove, a laser having a wavelength that does not remove the material of the first electrode layer is irradiated.

Images