Wafer for temperature measurement, and substrate processing system using the same

Abstract

This invention provides a temperature-measuring wafer that can improve operational efficiency, and a substrate processing system using the same. [Solution] The temperature measuring wafer 1 comprises a temperature sensor 3, a transmitting unit 8, a battery substrate 7, and a power generation substrate 9. The transmitting unit 8 transmits temperature data of the object to be measured by the temperature sensor 3. The power generation substrate 9 generates electricity using the heat of the object to be measured. The battery substrate 7 supplies the power generated by the power generation substrate 9 to the transmitting unit. Since the power consumed by the transmitting unit 8 and other components is supplemented by the power generated by the power generation substrate 9, the rate at which the power of the battery substrate 7 decreases can be slowed down. Therefore, the temperature measuring wafer 1 can be operated continuously for a longer period of time. In addition, since electricity is generated using the heat of the object to be measured, there is no need to supply new energy for power generation. Thus, the decrease in energy efficiency due to thermoelectric power generation can be avoided.

Description

Technical Field

[0001] The present invention relates to a wafer for temperature measurement that measures the temperature of a heating plate, and a substrate processing system using the same.

Background Art

[0002] Conventional substrate processing apparatuses include a plurality of heat treatment units stacked in multiple stages, and each of the plurality of heat treatment units includes a heating plate on which a substrate is placed for heat treatment. For the heating plate, strict in-plane temperature uniformity is required. Therefore, in order to individually adjust the individual differences of the heating plates, it is necessary to measure the temperature characteristics of each heating plate and appropriately control the temperature of the heating plate, particularly at the time of startup of the apparatus and during periodic maintenance.

[0003] As a method for measuring the temperature characteristics of a heating plate, a method is used in which a wafer for temperature measurement provided with a temperature sensor is placed on the heating plate, and the temperature of the heating plate is measured at predetermined time intervals. Examples of the conventional methods for wafers for temperature measurement include a wired type of wafer for temperature measurement using a wire and a wireless type of wafer for temperature measurement not using a wire. The wired type of wafer for temperature measurement has problems that full automation is difficult because operations such as connecting a communication wire need to be performed manually, and a conveyance error of the sensor substrate may occur due to twisting of the communication wire or the like. Therefore, in recent years, attention has been paid to the wireless type of wafer for temperature measurement.

[0004] The wireless type of wafer for temperature measurement includes a wireless wafer on which a temperature sensor, a secondary battery, a memory, and a controller are mounted (see, for example, Patent Document 1). When using a conventional wireless wafer, a base station for data collection is installed in the substrate processing apparatus. That is, when using the wireless type of wafer for temperature measurement, the wireless wafer is placed on the heating plate, and the temperature characteristics of the heating plate are measured by the temperature sensor. The measurement data obtained by the measurement is stored in the memory.

[0005] After measuring the temperature characteristics of each of the multiple heating plates and storing the measurement data, the wireless wafer is transported from the heating plates to the base station. Once the wireless wafer has been transported to the base station, the controller reads each of the measurement data from memory and transmits the measurement data to the outside of the wireless wafer. The transmitted measurement data is received by the data acquisition unit located in the base station. The temperature control unit located in the substrate processing device adjusts the temperature of each of the heating plates based on the received measurement data. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2011-091435 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] However, conventional examples with such a configuration have the following problems. Specifically, in conventional wireless temperature measurement wafers, the power of the secondary battery decreases as temperature characteristics are measured. Therefore, even when measuring temperature characteristics, if the power of the secondary battery falls below a predetermined value, it is necessary to move the temperature measurement wafer to a base station equipped with a charging unit and charge the secondary battery using the charging unit of the base station. During this charging of the secondary battery, it is not possible to measure the temperature of the heating plate. As a result, the operating efficiency of the temperature measurement wafer decreases, raising concerns that the time required to collect temperature data for each heating plate will be prolonged.

[0008] This invention has been made in view of these circumstances, and aims to provide a temperature measuring wafer that can improve operational efficiency, and a substrate processing system using the same. [Means for solving the problem]

[0009] To achieve this objective, the present invention has the following configuration. In other words, the temperature measuring wafer according to the present invention comprises a wafer body that can be placed on a temperature to be measured, a plurality of temperature sensors disposed on the wafer body, a transmitting unit capable of transmitting temperature data detected by the temperature sensors, a power supply unit disposed on the wafer body and supplying power to the transmitting unit, and a power generation unit disposed on the wafer body and generating electricity from the heat of the temperature to be measured, wherein the power supply unit supplies the power generated by the power generation unit from the heat of the temperature to be measured to the transmitting unit.

[0010] [Function / Effect] According to the temperature measuring wafer of the present invention, the wafer body comprises a temperature sensor, a transmitting unit, a power supply unit, and a power generation unit. The transmitting unit transmits temperature data of the object to be measured detected by the temperature sensor. The power generation unit generates electricity using the heat of the object to be measured. The power supply unit supplies the electricity generated by the power generation unit using the heat of the object to be measured to the transmitting unit.

[0011] By equipping the wafer body with a power generation unit, while the temperature-measuring wafer is placed on a temperature-measuring object and its temperature is being measured, the power generation unit generates electricity using the heat from the temperature-measuring object. The power generated by the power generation unit is then supplied to the transmission unit by the power supply unit. In other words, at least a portion of the power consumed by the temperature-measuring wafer as it measures the temperature of the temperature-measuring object is supplemented by the power generated by the power generation unit.

[0012] In other words, by incorporating a power generation unit, electricity is generated by effectively utilizing the heat of the object being measured while its temperature is being measured. Therefore, while the temperature measuring wafer is placed on the object and its temperature is being measured, the rate at which the power stored in the temperature measuring wafer decreases can be slowed down. As a result, the frequency at which the power of the temperature measuring wafer falls below a predetermined value can be reduced. That is, at the very least, the frequency at which the temperature measuring wafer needs to be moved to the base station for charging can be reduced, thereby improving the operating efficiency of the temperature measuring wafer. Consequently, the measurement of the object being measured can be completed in a shorter time.

[0013] Furthermore, in the invention described above, it is preferable that the transmitting unit is configured to wirelessly transmit temperature data detected by the temperature sensor while the wafer body is placed on the object to be measured for temperature.

[0014] The transmitting unit wirelessly transmits temperature data while the wafer body is placed on the object to be measured. In other words, it can transmit temperature data of the object measured by the temperature sensor in real time. Therefore, with the temperature measurement wafer placed on the object to be measured, the following steps can be performed: measuring the temperature of the object, acquiring the temperature data of the object, adjusting the temperature of the object based on the temperature data, and measuring the temperature of the object again. As a result, the operation of adjusting the temperature of the object using the temperature measurement wafer can be performed more quickly and with higher accuracy.

[0015] Furthermore, since the transmitting unit transmits the temperature data of the object to be measured to the outside of the temperature measurement wafer in real time, the process of transporting the temperature measurement wafer to the base station for the purpose of reading the temperature data of the object to be measured stored on the temperature measurement wafer becomes unnecessary. In other words, the frequency of transporting the temperature measurement wafer to the base station can be further reduced, thereby further improving the operating efficiency of the temperature measurement wafer.

[0016] In particular, if the power generated by the power generation unit can prevent the stored power of the temperature measurement wafer from being depleted before the measurement of all temperature targets is completed, the process of transporting the temperature measurement wafer to the base station for charging becomes unnecessary. As a result, the process of transporting the temperature measurement wafer to the base station itself can be omitted, further significantly improving the operating efficiency of the temperature measurement wafer.

[0017] Furthermore, in the invention described above, it is preferable that the power generation unit has a thermoelectric conversion element that generates electricity based on the temperature difference between the temperature to be measured and the atmosphere of the power generation unit.

[0018] [Function / Effect] According to the temperature measuring wafer of the present invention, the power generation unit has a thermoelectric conversion element that generates electricity based on the temperature difference between the object to be measured and the atmosphere of the power generation unit. The object to be measured is relatively hot, while the atmosphere of the power generation unit is relatively cold. By performing thermoelectric power generation using the temperature difference between the object to be measured and the atmosphere of the power generation unit, the power generation efficiency in the power generation unit can be further improved.

[0019] Furthermore, in the invention described above, it is preferable that the power generation unit is arranged in contact with the wafer body, and the power supply unit is arranged with respect to the wafer body via a heat insulating member.

[0020] [Function / Effect] In the temperature measuring wafer according to the present invention, the power generation unit is arranged so as to be in contact with the wafer body. In this case, since there is nothing obstructing the power generation unit and the wafer body, the efficiency of heat conduction from the temperature measurement target to the power generation unit can be improved. Therefore, the power generation efficiency in the power generation unit can be further improved.

[0021] Furthermore, in the invention described above, it is preferable that the overall thickness of the power supply unit and the wafer body, as well as the overall thickness of the power generation unit and the wafer body, are both 4 mm or less.

[0022] [Operation and Effect] According to the wafer for temperature measurement of the present invention, the total thickness of the power supply unit and the wafer main body unit is 4 mm or less. Also, the total thickness of the power generation unit and the wafer main body unit is 4 mm or less. As a result, the thickness of the wafer for temperature measurement can be made smaller than the thickness of the transfer port of the apparatus where the temperature measurement target is arranged. As a result, with the wafer for temperature measurement held by a transfer arm or the like, the wafer for temperature measurement can be automatically transferred to the temperature measurement target via the transfer port. Therefore, it becomes easier to fully automate the operation of measuring the temperature of the temperature measurement target with the wafer for temperature measurement, so the process of measuring the temperature of the temperature measurement target using the wafer for temperature measurement can be further shortened.

[0023] Also, in the above-described invention, it is preferable that the transmission unit is disposed on the outer peripheral portion of the wafer main body unit.

[0024] [Operation and Effect] According to the wafer for temperature measurement of the present invention, since the transmission unit is disposed on the outer peripheral portion of the wafer main body unit, when wirelessly transmitting temperature data from the transmission unit, the distance between the transmission unit and the temperature data transmission target can be made shorter. Also, it is possible to avoid the presence of obstacles to wireless communication between the transmission unit and the transmission target. Therefore, the accuracy of wireless communication by the transmission unit can be further improved.

[0025] In order to achieve such an object, the present invention may adopt the following configuration. That is, the present invention is a substrate processing system including a substrate processing apparatus that performs at least heat treatment on a substrate, wherein the substrate processing apparatus includes a heat treatment unit having a heating plate that performs heat treatment on the substrate on which the temperature measurement target is mounted, a holding unit that holds the wafer for temperature measurement according to any one of claims 1 to 4, and a standby unit that causes the wafer for temperature measurement held by the holding unit to standby inside the substrate processing apparatus, and a transfer unit that transfers the wafer for temperature measurement between the heat treatment unit and the standby unit, and is characterized by including these.

[0026] [Function / Effect] According to the substrate processing system of the present invention, in a substrate processing unit equipped with a substrate processing apparatus, the substrate processing apparatus comprises a heat treatment unit, a transport unit, and a holding unit. The transport unit transports a wafer for temperature measurement between the heat treatment unit and a standby unit. The heat treatment unit is equipped with a heating plate and performs heat treatment on a substrate mounted on the heating plate. The wafer for temperature measurement measures the temperature characteristics using the heating plate as the temperature measurement target.

[0027] The holding unit holds the wafer for temperature measurement. As described above, the wafer for temperature measurement has a configuration in which a temperature sensor, a transmitting unit, a power supply unit, and a power generation unit are arranged in the wafer body. The transmitting unit transmits the temperature data of the object to be measured detected by the temperature sensor. The power generation unit generates electricity using the heat of the object to be measured. The power supply unit supplies the power generated by the power generation unit using the heat of the object to be measured to the transmitting unit.

[0028] By equipping the wafer body with a power generation unit, while the temperature-measuring wafer is placed on a temperature-measuring object and its temperature is being measured, the power generation unit generates electricity using the heat from the temperature-measuring object. The power generated by the power generation unit is then supplied to the transmission unit by the power supply unit. In other words, at least a portion of the power consumed by the temperature-measuring wafer as it measures the temperature of the temperature-measuring object is supplemented by the power generated by the power generation unit.

[0029] In other words, by incorporating a power generation unit, electricity is generated by effectively utilizing the heat of the object being measured while its temperature is being measured. Therefore, while the temperature measuring wafer is placed on the object and its temperature is being measured, the rate at which the power stored in the temperature measuring wafer decreases can be slowed down. As a result, the frequency at which the power of the temperature measuring wafer falls below a predetermined value can be reduced. That is, at the very least, the frequency at which the temperature measuring wafer needs to be moved to the base station for charging can be reduced, thereby improving the operating efficiency of the temperature measuring wafer. Consequently, the measurement of the object being measured can be completed in a shorter time.

[0030] Furthermore, in the above-described invention, it is preferable to include a receiving unit which is disposed outside the heat treatment unit and receives the temperature data transmitted wirelessly from the transmitting unit.

[0031] [Function / Effect] According to the substrate processing system of the present invention, the receiving unit receives temperature data wirelessly transmitted from the transmitting unit of the temperature measuring wafer. By equipping the substrate processing apparatus with a receiving unit, real-time wireless communication of temperature data can be performed inside the substrate processing apparatus while the temperature measuring wafer is mounted on the heating plate. As a result, wireless communication of the heating plate's temperature data can be performed even more quickly and accurately.

[0032] Furthermore, in the invention described above, a rotation mechanism is provided to rotate the temperature measuring wafer being transported to the standby unit so that when the temperature measuring wafer is mounted on the heating plate, the transmitting unit faces the direction of the receiving unit, It is preferable to include the following.

[0033] [Function and Effects] The substrate processing system according to the present invention is equipped with a rotation mechanism for rotating the temperature-measuring wafer being transported to the standby unit. The rotation mechanism rotates the temperature-measuring wafer so that the transmitting unit faces the receiving unit when the temperature-measuring wafer is mounted on the heating plate. By rotating the temperature-measuring wafer with the rotation mechanism, the distance between the transmitting unit and the receiving unit can be shortened when transmitting temperature data wirelessly while the temperature-measuring wafer is mounted on the heating plate. Furthermore, the presence of obstacles between the transmitting unit and the receiving unit can be avoided. Therefore, the accuracy of wireless communication using the temperature-measuring wafer can be further improved.

[0034] Furthermore, in the above-described invention, the substrate processing apparatus is preferably equipped with a temperature control unit that adjusts the temperature of the heating plate based on the temperature data of the heating plate transmitted from the transmitting unit, and the temperature control unit adjusts the temperature of the heating plate based on the temperature data of the heating plate while the temperature measuring wafer is placed on the heating plate.

[0035] [Function / Effect] According to the substrate processing system of the present invention, the substrate processing apparatus includes a temperature control unit. The temperature control unit adjusts the temperature of the heating plate based on the temperature data of the heating plate transmitted from the temperature measurement wafer transmission unit. The temperature control unit adjusts the temperature of the heating plate based on the temperature data of the heating plate while the temperature measurement wafer is placed on the heating plate.

[0036] In this case, with the temperature measurement wafer placed on the heating plate, three steps can be performed in sequence: measuring the temperature data of the heating plate; transmitting the temperature data of the heating plate from the temperature measurement wafer to the substrate processing apparatus; and the temperature control unit adjusting the temperature of the heating plate on which the temperature measurement wafer is placed based on the temperature data.

[0037] Since these processes are performed continuously while the temperature measurement wafer is placed on the heating plate, the temperature control unit can quickly adjust the temperature of the heating plate and then quickly measure the temperature data of the heating plate again using the temperature measurement wafer that remains on the heating plate. In other words, the temperature control unit can quickly confirm whether the temperature of the heating plate has been accurately adjusted. As a result, by configuring the system to repeatedly perform these processes while the temperature measurement wafer is placed on the heating plate, the temperature of the heating plate can be adjusted quickly and accurately. [Effects of the Invention]

[0038] According to the temperature measuring wafer and the substrate processing system using the same according to the present invention, it is possible to improve operating efficiency. [Brief explanation of the drawing]

[0039] [Figure 1] This figure illustrates the configuration of a temperature measuring wafer according to Example 1. (a) is a plan view of the temperature measuring wafer, and (b) is a front view of the temperature measuring wafer. [Figure 2] This is a longitudinal cross-sectional view of the battery substrate according to Example 1. [Figure 3] This is a longitudinal cross-sectional view of the power generation substrate according to Example 1. [Figure 4] This is a functional block diagram of the substrate processing system according to Example 1. [Figure 5] This is a cross-sectional view of the substrate processing apparatus according to Example 1. [Figure 6] This is a longitudinal cross-sectional view of the substrate processing apparatus according to Example 1. [Figure 7] This diagram illustrates the configuration of the substrate transport mechanism according to Example 1. (a) is a front view of the substrate transport mechanism, and (b) is a top view of the substrate transport mechanism. [Figure 8] This is a longitudinal cross-sectional view of a substrate processing apparatus showing the arrangement of the heat treatment unit according to Example 1. [Figure 9] This is a longitudinal cross-sectional view of the heat treatment unit according to Example 1. [Figure 10] This is a cross-sectional view of the heat treatment unit according to Example 1. [Figure 11] This is a flowchart showing the operation of the substrate processing system according to Example 1. [Figure 12] This is a cross-sectional view illustrating step S2 according to Example 1. [Figure 13] (a) to (c) are longitudinal cross-sectional views illustrating step S3 according to Example 1. [Figure 14] (a) to (c) are longitudinal cross-sectional views illustrating step S3 according to Example 1. [Figure 15] This is a cross-sectional view illustrating step S4 in Example 1. [Figure 16] (a) and (b) are longitudinal cross-sectional views illustrating step S6 according to Example 1. [Figure 17] This is a longitudinal cross-sectional view illustrating step S7 in Example 1. [Figure 18] This is a functional block diagram of the substrate processing system according to Example 2. [Figure 19] This figure illustrates the holding and rotating part according to Example 2. (a) is a longitudinal cross-sectional view of the holding and rotating part, and (b) is a plan view of the holding and rotating part. [Figure 20] This is a flowchart showing the operation of the substrate processing system according to Example 2. [Figure 21] (a) to (c) are plan views illustrating step S10 according to Example 2. [Figure 22] This is a cross-sectional view illustrating step S4 according to Example 2. [Figure 23] This is a cross-sectional view illustrating step S4 in relation to the comparative example. [Figure 24] This is a cross-sectional view illustrating step S4 according to Example 2. [Figure 25] This is a cross-sectional view illustrating step S4 according to Example 2. [Figure 26] This is a functional block diagram of the substrate processing system according to Example 3. [Figure 27] This is a longitudinal cross-sectional view of the base station according to Example 3. [Figure 28] This is a longitudinal cross-sectional view of a substrate processing apparatus showing the arrangement of base stations according to Embodiment 3. [Figure 29] This is a flowchart showing the operation of the substrate processing system according to Example 3. [Figure 30] This is a cross-sectional view illustrating step S107 according to Example 3. [Modes for carrying out the invention] [Examples]

[0040] Hereinafter, Embodiment 1 of this invention will be described with reference to the drawings.

[0041] As shown in Figure 3, the substrate processing system 100 according to Embodiment 1 comprises a temperature-measuring wafer 1 and a substrate processing apparatus 30. The temperature-measuring wafer 1 measures the temperature of a heating plate 54 (see Figure 4) in a heat treatment unit 43 provided in the substrate processing apparatus 30. The substrate processing apparatus 30 performs various processes on a normal semiconductor wafer W (hereinafter referred to as "wafer W"). These various processes include at least heat treatment.

[0042] <Configuration of a wafer for temperature measurement> First, the temperature measuring wafer 1 will be described using Figure 1 and other figures. Figure 1(a) is a plan view of the temperature measuring wafer 1 according to Example 1. Figure 1(b) is a front view of the temperature measuring wafer 1 according to Example 1.

[0043] The temperature measuring wafer 1 comprises a wafer body 2, a plurality of temperature sensors 3, a measurement substrate 5, a battery substrate 7, and a power generation substrate 9. The wafer body 2 is formed in a disc shape. The wafer body 2 is made of silicon or ceramic, for example. The wafer body 2 is formed with approximately the same diameter as the wafer W (for example, 300 mm).

[0044] Each of the temperature sensors 3 is positioned on the surface of the wafer body 2. Each of the temperature sensors 3 measures the temperature of the wafer body 2. In Figure 1(a), for the sake of explanation, 17 temperature sensors 3 are provided on the wafer body 2. The multiple temperature sensors 3 can be arranged radially, concentrically, or in combination thereof on the surface of the wafer body 2, for example. In Example 1, one temperature sensor 3 is positioned at the center of the wafer body 2, and eight temperature sensors are positioned on the outer periphery of the wafer body 2. Eight temperature sensors are positioned between the outer periphery and the center of the wafer body 2. It is preferable that the multiple temperature sensors 3 are evenly distributed on the surface of the wafer body 2. Examples of temperature sensors 3 include thermocouples, resistance thermometers, and quartz crystal oscillators. In Example 1, it is preferable that the outer periphery of the wafer body 2 corresponds to the portion outside the concentric circles, which are approximately 2 / 3 of the diameter of the wafer body 2.

[0045] The measurement board 5 performs various information processing, such as digitizing the data measured on the temperature measurement wafer 1, and communicates with the outside of the temperature measurement wafer 1. The measurement board 5 is located on a part of the outer periphery of the wafer body 2. Figure 1(a) shows an example where the measurement board 5 is located on the right end of the outer periphery of the wafer body 2. As shown in Figure 3, the measurement board 5 includes an A / D converter 6 and a transmission unit 8.

[0046] The A / D converter 6 is electrically connected to the temperature sensor 3 and the transmitter 8. The A / D converter 6 digitally converts the temperature data measured by the temperature sensor 3 and transmits it to the transmitter 8. The transmitter 8 transmits the temperature data and other information to the outside of the temperature measuring wafer 1. The information is transmitted wirelessly by the transmitter 8. In other words, the temperature measuring wafer 1 is a wireless temperature measuring wafer that communicates with the outside wirelessly in real time. A wireless communication method such as Bluetooth (registered trademark) or Wi-Fi (registered trademark) is used as the transmitter 8.

[0047] The battery board 7 supplies power to the temperature sensor 3 and the measurement board 5, respectively. In other words, the battery board 7 supplies power to the transmission unit 8. The battery board 7 is disposed on the surface of the wafer body 2. Figure 1(a) shows an example in which the battery board 7 is disposed on the left end side of the wafer body 2. The battery board 7 corresponds to the power supply unit in this invention.

[0048] Figure 2 is a longitudinal cross-sectional view of the battery substrate 7 disposed on the wafer body 2. The battery substrate 7 comprises a heat insulating sheet 15 and a housing 17. The heat insulating sheet 15 is positioned to be in contact with the surface (top surface) of the wafer body 2. The housing 17 is positioned to be in contact with the surface of the heat insulating sheet 15. The heat insulating sheet 15 corresponds to the first heat insulating sheet in the present invention.

[0049] The heat insulating sheet 15 prevents heat from the wafer body 2 from being transferred to the housing 17 and the interior of the housing 17. In other words, the heat insulating sheet 15 prevents the temperature inside the housing 17 from rising due to the temperature rise of the wafer body 2. It is preferable to use a fibrous material such as glass fiber or carbon fiber as the material that makes up the heat insulating sheet 15. It is even more preferable to use silicone glass cloth as the material that makes up the heat insulating sheet 15. By using these materials, the heat insulating properties of the heat insulating sheet 15 can be improved while making the battery substrate 7 thinner.

[0050] The housing 17 houses the battery unit 19 and other components. The housing 17 can be made of materials such as stainless steel or other metals. The internal space of the housing 17 is sealed by the upper plate 17a, lower plate 17b, and side plates 17c. The housing 17 protects the built-in battery board 7 and other components.

[0051] The battery unit 19 comprises a base substrate 20 and a secondary battery 21. The base substrate 20 is a plate-shaped member, for example, made of silicon or the like. The secondary battery 21 is disposed on the upper surface of the base substrate 20. For example, the battery unit 19 has a configuration in which multiple secondary batteries 21 are arranged in a two-dimensional matrix on the base substrate 20. Examples of secondary batteries 21 include lithium-ion batteries and all-solid-state batteries. In particular, when an all-solid-state battery without an electrolyte is used as the secondary battery 21 in the battery substrate 7, performance degradation caused by high temperatures of the battery substrate 7 can be more effectively suppressed. Therefore, the operating limit temperature of the battery substrate 7 can be further improved.

[0052] As shown in Figure 2, an insulating sheet 23 is provided on the lower surface of the battery unit 19, and an insulating sheet 25 is provided on the upper surface of the battery unit 19. That is, the insulating sheet 23 is in contact with the lower surface of the base substrate 20, and the insulating sheet 25 is in contact with the upper surface of the secondary battery 21. The insulating sheets 23 and 25 are made of the same material as the insulating sheet 15. Inside the housing 17, the insulating sheets 23 and 25 suppress the transfer of heat to the secondary battery 21.

[0053] As shown in Figure 2, tape 27 is attached to the lower surface of the heat insulating sheet 23, and tape 29 is attached to the upper surface of the heat insulating sheet 25. In other words, a battery stack 40 is arranged inside the housing 17, in which tape 27, heat insulating sheet 23, base substrate 20, secondary battery 21, heat insulating sheet 25, and tape 29 are stacked in that order.

[0054] The tape 27 has an adhesive surface on its upper side, which is in contact with the heat insulating sheet 23. The lower side of the tape 27 is a flat surface. Therefore, by attaching the tape 27 to the lower surface of the heat insulating sheet 23, the heat insulating sheet 23 can be fixed to the battery unit 19, and the flatness of the lower surface of the battery stack 40 can be improved. Preferably, the tape 27 is a heat-resistant tape made of a polyimide-based material, such as Kapton tape (Kapton: registered trademark). By using a heat-resistant tape as the tape 27, the rise in temperature of the secondary battery 21 can be more effectively suppressed.

[0055] The tape 29 has an adhesive surface on its lower side, which is in contact with the heat insulation sheet 25. The upper surface of the tape 29 is a flat surface. Therefore, by attaching the tape 29 to the upper surface of the heat insulation sheet 25, the heat insulation sheet 25 can be fixed to the battery unit 19, and the flatness of the upper surface of the battery stack 40 can be improved. The tape 29 is made of the same material as the tape 27. By using a heat-resistant tape as the tape 27, the rise in temperature of the secondary battery 21 can be more effectively suppressed.

[0056] Thus, the battery substrate 7 has a structure in which the heat insulating sheet 15, the lower plate 17b of the housing 17, the tape 27, the heat insulating sheet 23, the battery unit 19, the heat insulating sheet 25, the tape 29, and the upper plate 17a of the housing 17 are stacked in order from the side closest to the wafer body 2 in the thickness direction (z direction in Figure 2). The thickness d of the temperature measuring wafer 1 in the area where the battery substrate 7 is installed is configured to be 4 mm or less. The thickness d corresponds to the sum of the thickness of the wafer body 2 and the thickness of the battery substrate 7. Of the entire temperature measuring wafer 1, the part where the battery portion 7 is formed is the thickest. That is, because the thickness d is 4 mm or less, the overall thickness of the temperature measuring wafer 1 is 4 mm or less. By having such a stacked structure in which a flat secondary battery 21 is sandwiched between multiple heat insulating sheets, the heat resistance of the battery substrate 7 can be improved while further reducing the thickness of the battery substrate 7 equipped with the secondary battery 21.

[0057] The configuration of the measurement board 5 in its vertical section is the same as that of the battery board 7 shown in Figure 2, except that it has mounted components (not shown) instead of the secondary battery 21. Therefore, the description of the vertical section of the measurement board 5 is omitted. In other words, the mounted components of the measurement board 5 are arranged on the wafer body 2 via an insulating sheet, similar to the secondary battery 21 of the battery board 7. Therefore, when the temperature measurement wafer 1 is placed on the heating plate 54 to measure the temperature, the efficiency of heat conduction from the heating plate 54 to the mounted components of the measurement board can be reduced by the insulating sheet. As a result, when measuring the temperature of the heating plate 54, the rise in the temperature of the mounted components can be more effectively suppressed.

[0058] The thickness of the temperature measuring wafer 1 in the area where the measurement substrate 5 is installed is configured to be 4 mm or less. In other words, the sum of the thickness of the wafer body 2 and the thickness of the measurement substrate 5 is configured to be 4 mm or less.

[0059] As shown in Figure 1 and other figures, the battery board 7 is equipped with a battery temperature detection unit 11. The battery temperature detection unit 11 is a temperature sensor built into the battery board 7. The battery temperature detection unit 11 detects the temperature of the battery board 7. As shown in Figure 4, the battery temperature detection unit 11 is electrically connected to the measurement board 5. The temperature data of the battery board 7 detected by the battery temperature detection unit 11 is transmitted to the measurement board 5. The transmitted temperature data of the battery board 7 is digitally converted by the A / D converter 6 and made available for transmission to the outside of the temperature measurement wafer 1 by the transmission unit 8.

[0060] The power generation substrate 9 is disposed on the surface of the wafer body 2. Figure 1(a) shows an example where the power generation substrate 9 is disposed on the lower end side of the wafer body 2. The power generation substrate 9 is electrically connected to the battery substrate 7 and the measurement substrate 5, respectively. The power generation substrate 9 is configured to generate electricity using heat. The power generation substrate 9 includes a thermoelectric power generation module 13 and a substrate temperature sensing unit 14.

[0061] The thermoelectric power generation module 13 generates electricity using thermal energy. That is, when the temperature measuring wafer 1 is placed on the heating plate 54, the thermoelectric power generation module 13 generates electricity using the heat from the heated plate 54, which is at a high temperature. An example of a thermoelectric power generation module 13 is a thermoelectric conversion element that generates electricity using the temperature difference of an object. In Example 1, a thermoelectric conversion element is used as the thermoelectric power generation module 13.

[0062] The power generation board 9 is configured to transmit power generated in the thermoelectric power generation module 13 to the battery board 7. That is, a power transmission unit (not shown) provided on the power generation board 9 receives the power generated by the thermoelectric power generation module 13 using heat and transmits it to the battery board 7. The power transmitted to the battery board 7 is stored in the secondary battery 21, and this power is supplied to the transmission unit 8, etc. The method of transmitting power generated in the power generation board 9 to the battery board 7 may be wireless or wired. By providing the power generation board 9 to the temperature measuring wafer 1, at least a portion of the power consumed in the temperature measuring wafer 1 can be supplemented by the power generated in the temperature measuring wafer 1. The thermoelectric power generation module 13 corresponds to the power generation unit in this invention.

[0063] Note that the configuration of the power generation substrate 9 in the vertical section differs from that of the battery substrate 7. Figure 3 is a vertical cross-sectional view of the power generation substrate 9. The power generation substrate 9 has a configuration in which a thermoelectric power generation module 13 and a base substrate 111 are stacked. The base substrate 111 is placed on the upper surface of the thermoelectric power generation module 13. The thermoelectric power generation module 13 is positioned so as to be in contact with the wafer body portion 2.

[0064] In other words, the secondary battery 21 of the battery substrate 7 is indirectly in contact with the wafer body 2 via an insulating sheet 15, while the thermoelectric power generation module 13 of the power generation substrate 9 is in direct contact with the wafer body 2. Because the thermoelectric power generation module 13 is in direct contact with the wafer body 2, when the temperature measurement wafer 1 is placed on the heating plate 54, the heat from the heating plate 54 that has been conducted to the wafer body 2 is efficiently transferred to the thermoelectric power generation module 13. As a result, the power generation efficiency of the thermoelectric power generation module 13 can be improved.

[0065] Furthermore, the power generation substrate 9 is configured such that the side surface of the thermoelectric power generation module 13 is exposed to the outside of the power generation substrate 9. As shown in Figure 3, the thermoelectric power generation module 13 is exposed to the atmosphere Am. By the thermoelectric power generation module 13 being in direct contact with the atmosphere Am, the heat from the low-temperature atmosphere Am is efficiently transferred to the thermoelectric power generation module 13.

[0066] In Example 1, one end of the thermoelectric element constituting the thermoelectric power generation module 13 is positioned close to the contact surface with the wafer body 2. The other end of the thermoelectric element constituting the thermoelectric power generation module 13 is positioned close to the contact surface with the atmosphere Am. For example, one end of the thermoelectric element is positioned near the back surface of the thermoelectric power generation module 13, and the other end of the thermoelectric element is positioned near the side surface of the thermoelectric power generation module 13. In this case, the heat from the relatively high-temperature heating plate 54 is efficiently transferred to one end of the thermoelectric element, and the heat from the relatively low-temperature atmosphere Am is efficiently transferred to the other end of the thermoelectric element. As a result, the temperature difference between both ends of the thermoelectric element of the thermoelectric power generation module 13 becomes larger, so the power generation efficiency of the thermoelectric power generation module 13 can be further improved.

[0067] As shown in Figure 3, the thickness V of the temperature measuring wafer 1 in the portion where the power generation substrate 9 is installed is configured to be 4 mm or less. In other words, the sum of the thickness of the wafer body 2 and the thickness of the power generation substrate 9 is configured to be 4 mm or less.

[0068] The substrate temperature detection unit 14 is a temperature sensor built into the power generation substrate 9. The substrate temperature detection unit 14 detects the temperature of the power generation substrate 9. As shown in Figure 4, the substrate temperature detection unit 14 is electrically connected to the measurement substrate 5. The temperature data of the power generation substrate 9 detected by the substrate temperature detection unit 14 is transmitted to the measurement substrate 5. The transmitted temperature data of the power generation substrate 9 is digitally converted by the A / D converter 6 and made available for transmission to the outside of the temperature measurement wafer 1 by the transmission unit 8.

[0069] As shown in Figure 1, a notch 10 is formed on the outer edge of the temperature measuring wafer 1. The notch 10 functions as a reference for adjusting the orientation of the measurement substrate 5 on the temperature measuring wafer 1. The depth of the notch 10 is approximately 1 mm, for example. In Figure 1(a), the notch 10 is formed on the upper side of the temperature measuring wafer 1. By rotating the temperature measuring wafer 1 appropriately using the notch 10 as a reference, the orientation of the measurement substrate 5 in a plan view can be adjusted to a predetermined angle. Note that the temperature measuring wafer 1 may have a different configuration than the notch 10, as long as it serves as a reference for adjusting the orientation of the measurement substrate 5. That is, instead of the notch 10, an orientation flat or mark may be formed on the temperature measuring wafer 1.

[0070] <Configuration of substrate processing equipment> Next, the substrate processing apparatus 30 will be described using Figure 5 and other figures. Figure 5 is a cross-sectional view of the substrate processing apparatus 30 according to Example 1. Figure 6 is a longitudinal cross-sectional view of the substrate processing apparatus 30. Figure 6 corresponds to the cross-sectional view taken along arrow aa in Figure 5. The substrate processing apparatus 30 according to Example 1 performs coating and heat treatment on a wafer W. In the substrate processing apparatus 30, the left-right direction is defined as the x-direction, the front-back direction as the y-direction, and the up-down direction as the z-direction.

[0071] The substrate processing apparatus 30 comprises an indexer block 31 and a processing block 32. The indexer block 31 is equipped with two openers 33 and 34 and two substrate transport mechanisms TR1 and TR2. The two openers 33 and 34 (carrier mounting sections) on the indexer block 31 each mount a carrier C capable of accommodating multiple wafers W. For example, a hoop (FOUP: Front Open Unified Pod) is used as the carrier C. The carrier C is configured to accommodate a temperature measurement wafer 1 in addition to the wafers W.

[0072] Each of the openers 33 and 34 includes a mounting table 35 on which the carrier C is placed, an opening 36 for passing the wafer W or temperature measuring wafer 1 through, a shutter member (not shown) for opening and closing the opening 36 and attaching and detaching the lid to the carrier body, and a shutter member drive mechanism (not shown) for driving the shutter member.

[0073] Each of the substrate transport mechanisms TR1 and TR2 comprises two hands 37, a forward / backward drive unit 38, and a lifting / rotating drive unit 39. Each hand 37 holds a wafer W. Each hand 37 is movably mounted on the forward / backward drive unit 38. The forward / backward drive unit 38 can move the two hands 37 individually. The two hands 37 are configured similarly to the two hands 47 provided in the substrate transport mechanism TR3. Each hand 37 is configured to hold a wafer 1 for temperature measurement.

[0074] The lifting and rotating drive unit 39 lifts and rotates each of the hands 37 by lifting and rotating the forward and backward drive unit 38. That is, as shown in Figure 5, the lifting and rotating drive unit 39 can move the forward and backward drive unit 38 in the vertical direction (z direction) and can also rotate the forward and backward drive unit 38 around the vertical axis AX1. The forward and backward drive unit 38 and the lifting and rotating drive unit 39 are each equipped with, for example, an electric motor. The two substrate transport mechanisms TR1 and TR2 are fixed to the floor of the indexer block 31 so that they cannot move in the horizontal direction. Alternatively, the two substrate transport mechanisms TR1 and TR2 may each be provided to be movable in the horizontal direction. Also, one of the two substrate transport mechanisms TR1 and TR2 may be omitted.

[0075] A substrate mounting section PS1 is provided between the indexer block 31 and the upper processing layer 32A of the processing block 32. A substrate mounting section PS2 is provided between the indexer block 31 and the lower processing layer 32B of the processing block 32. Each of the substrate mounting sections PS1 and PS2 is configured to accommodate one or more wafers W.

[0076] The substrate mounting sections PS1 to PS2 are configured to accommodate the temperature measurement wafer 1. When the substrate mounting section is configured to accommodate multiple wafers W, the substrate mounting sections PS1 to PS2 include multiple mounting members arranged vertically. In this case, due to the size of the gap between two mounting members, the temperature measurement wafer 1 may be configured to be placed on the uppermost mounting member. Alternatively, the temperature measurement wafer 1 may be placed on a level other than the uppermost one.

[0077] The substrate transport mechanism TR1 transports the wafer W from the carrier C placed on the opener 33 to one of the two substrate mounting sections PS1 and PS2. The substrate transport mechanism TR2 transports the wafer W from the carrier C placed on the opener 34 to one of the two substrate mounting sections PS1 and PS2. Note that there may be two or more openers 33 and 34 in the vertical direction. In this case, for example, the substrate transport mechanism TR1 can retrieve the wafer W from the carrier C placed on two or more openers 33 arranged in the vertical direction.

[0078] The processing block 32 comprises a coating unit 41, a transport space 42, and a heat treatment block 97. In Example 1, the processing block 32 has a configuration in which two processing layers having the same configuration are stacked. That is, as shown in Figure 5, the processing block 32 has a configuration in which an upper processing layer 32A and a lower processing layer 32B are stacked vertically.

[0079] The coating unit 41 performs a coating process by applying a processing liquid to the wafer W. Examples of processing liquids include photoresist liquid or liquid for forming an anti-reflective film. One coating unit 41 is provided in each of the processing layers 32A and 32B. Of the two coating units 41, the one provided in processing layer 32A is referred to as coating unit 41A, and the one provided in processing layer 32B is referred to as coating unit 41B to distinguish between the two. Each of the coating units 41A and 41B is equipped with a series of mechanisms used in the coating process, such as a nozzle for applying the processing liquid to the wafer W and a spin chuck for holding the wafer W.

[0080] The transport space 42 is a rectangular space that extends linearly in the left-right direction (x-direction) in a plan view. The coating unit 41 and the heat treatment unit 43 are arranged so as to sandwich the transport space 42 from front to back. That is, the coating unit 41 is located on the front side of the transport space 42, and the heat treatment unit 43 is located on the back side (rear side) of the transport space 42.

[0081] One transport space 42 is provided in each of the processing layers 32A and 32B. Of the two transport spaces 42, the one provided in processing layer 32A will be referred to as transport space 42A, and the one provided in processing layer 32B will be referred to as transport space 42B to distinguish between the two.

[0082] Each of the transport spaces 42A and 42B is equipped with a receiving unit 46 and a substrate transport mechanism TR3. Details of the receiving unit 46 will be described later.

[0083] Figure 7(a) is a side view of the substrate transport mechanism TR3. Figure 7(b) is a top view of the substrate transport mechanism TR3. The substrate transport mechanism TR3 transports wafers W or temperature measurement wafers 1 in each of the transport spaces 42A and 42B. That is, the substrate transport mechanism TR3 can load and unload wafers W into and out of the coating unit 41. The substrate transport mechanism TR3 can also load and unload wafers W into and out of the heat treatment unit 43. The substrate transport mechanism TR3 can also load and unload wafers W into and out of the standby unit 45.

[0084] The substrate transport mechanism TR3 comprises two hands 47, a forward / backward drive unit 48, and a rotation drive unit 49. The substrate transport mechanism TR3 further comprises a first movement mechanism 51 and a second movement mechanism 52. Of the two hands 47, one is referred to as hand 47A and the other as hand 47B to distinguish them.

[0085] Each of the hands 47A and 47B holds a wafer W. Each of the two hands 47A and 47B has one base portion 50 and two tip portions 93 that branch off from the base portion 50. Three protrusions 95 are provided on the inside of the base portion 50 and the two tip portions 93. The wafer W is placed on the three protrusions 95. Each of the three protrusions 95 has a suction portion 96. The suction portion 96 is connected to an intake system (not shown). Note that the two hands 47A and 47B are not limited to the shape shown in Figure 7(b).

[0086] The two hands 47A and 47B are individually movable horizontally. The forward / backward drive unit 48 supports the hands 47A and 47B so that they can move, and moves each of the hands 47A and 47B forward and backward. To drive one hand 47A, the forward / backward drive unit 48 includes, for example, an electric motor, a linear screw shaft, a movable member having a hole that engages with the screw shaft, and a guide part that guides the movable member. The rotary drive unit 49 rotates the forward / backward drive unit 48 around the vertical axis AX2. This allows the orientation of the two hands 47A and 47B to be changed. The rotary drive unit 49 includes an electric motor.

[0087] The first moving mechanism 51 moves the rotary drive unit 49 in the x-direction. This allows the two hands 47A, 47B and the forward / backward drive unit 48 to move in the x-direction. The second moving mechanism 52 moves the rotary drive unit 49 in the vertical direction (z-direction). This allows the two hands 47A, 47B and the forward / backward drive unit 48 to move in the z-direction. In other words, each of the first moving mechanism 51 and the second moving mechanism 52 can move the two hands 47A, 47B and the forward / backward drive unit 48 in the xz direction. Each of the first moving mechanism 51 and the second moving mechanism 52 is equipped with an electric motor. Each of the first moving mechanism 51 and the second moving mechanism 52 may be mounted on the floor.

[0088] The heat treatment block 97 has heat treatment units 43 stacked in multiple layers and arranged in parallel in the x direction. Each of the heat treatment units 43 performs heat treatment on the wafer W. Figure 8 is a diagram showing the arrangement of the heat treatment units 43 in the processing block 32. Figure 8 corresponds to the cross-sectional view taken along arrow bb in Figure 5. Each of the processing layers 32A and 32B of the processing block 32 has one heat treatment block 97. Of the two heat treatment blocks 97 in the processing block 32, the one located in the upper processing layer 32A is referred to as heat treatment block 97A, and the one located in the lower processing layer 32B is referred to as heat treatment block 97B to distinguish between the two.

[0089] In each of the two heat treatment blocks 97A and 97B, the heat treatment units 43 are configured to be arranged in a 3x5 grid. As shown in Figures 5 and 6, the heat treatment units 43 located in the left column are designated as heat treatment unit 43A, the heat treatment units 43 located in the middle column are designated as heat treatment unit 43B, and the heat treatment units 43 located in the right column are designated as heat treatment unit 43C to distinguish them from the other columns.

[0090] <Configuration of the heat treatment unit> The configuration of the heat treatment unit 43 will now be described using Figures 9 and 10. Figure 9 is a longitudinal cross-sectional view of the heat treatment unit 43 in a right-side view. Figure 10 is a plan view of the heat treatment unit 43. Each component of the heat treatment unit 43 includes a cooling plate 53, a heating plate 54, a first support pin 55, a first pin lifting mechanism 56, a second support pin 57, a second pin lifting mechanism 58, and a local transport mechanism 59. These are located inside the casing 60.

[0091] The cooling plate 53 cools the wafer W on which it is placed. The cooling plate 53 is plate-shaped and made of, for example, metal or ceramic. The cooling plate 53 is provided with a circulation channel (not shown) inside which cooling water adjusted to a predetermined temperature (for example, 23°C) circulates. Cooling water is circulated through the circulation channel inside the cooling plate 53 by an external pump. The cooling plate 53 may also incorporate a Peltier element as a cooling mechanism.

[0092] The cooling plate 53 is provided with three holes 61 in the vertical direction (z-direction). A rod-shaped first support pin 55 is passed through each of the three holes 61. That is, the three first support pins 55 are provided so as to penetrate the cooling plate 53. The lower ends of the three first support pins 55 are fixed to the lifting member 63. The first pin lifting mechanism 56 raises and lowers the three first support pins 55 fixed to the lifting member 63 by raising and lowering the lifting member 63. The first pin lifting mechanism 56 and the second pin lifting mechanism 58, which will be described later, are each composed of actuators driven by an electric motor or air.

[0093] For example, the wafer W comes into contact with the cooling plate 53 via a transport arm 65, which will be described later. That is, the wafer W is cooled indirectly. In this regard, the wafer W may be configured to be placed directly on the cooling plate 53. Alternatively, the transport arm 65 may have a cooling function similar to the cooling plate 53. In this case, the cooling plate 53 may not be provided. If a cooling mechanism (not shown) is provided on the transport arm 65, the temperature measuring wafer 1 can be cooled by the transport arm 65 holding the temperature measuring wafer 1.

[0094] The heating plate 54 heats the wafer W on which it is placed to a predetermined temperature. The heating plate 54 is arranged horizontally (y-direction) relative to the cooling plate 53. The heating plate 54 is plate-shaped and made of metal or ceramic. The heating plate 54 is equipped with a heater (e.g., an electric heater).

[0095] The heating plate 54 is provided with three vertical holes 66. A rod-shaped second support pin 57 is passed through each of the three holes 66. That is, the three second support pins 57 are provided so as to penetrate the heating plate 54. The lower ends of the three second support pins 57 are fixed to the lifting member 67. The second pin lifting mechanism 58 raises and lowers the three second support pins 57 fixed to the lifting member 67 by raising and lowering the lifting member 67.

[0096] The heating plate 54 is provided with a cover 68 to cover the wafer W on its upper surface 54A. A cover lifting mechanism 69 is connected to the cover 68 and moves the cover 68 up and down. The cover lifting mechanism 69 is composed of an actuator driven by an electric motor or air. In Figure 9, a ring-shaped exhaust port 71 is provided on the upper surface 54A of the heating plate 54 so as to surround the wafer W on which it is placed. When the cover 68 is in the lower position covering the wafer W, the exhaust port 71 can exhaust gas from the processing space SP.

[0097] Refer to Figure 10. The local transport mechanism 59 transports the temperature measuring wafer 1 between the cooling plate 53 and the heating plate 54 inside the heat treatment unit 43. The local transport mechanism 59 includes a transport arm 65 and an arm drive mechanism 73.

[0098] The transport arm 65 is a flat plate-shaped member made of a material with good heat conductivity (e.g., aluminum). Three proximity balls 74 are provided on the upper surface of the transport arm 65. The three proximity balls 74 protrude upward from the upper surface. Therefore, when a wafer W is placed on the upper surface of the transport arm 65, the three proximity balls 74 create a small gap between the lower surface of the wafer W and the upper surface of the transport arm 65. Two slits 75 are formed in the transport arm 65. The two slits 75 are formed on the heating plate 54 side of the transport arm 65 and extend parallel to each other in the front-rear direction (y-direction). For example, three first support pins 55 in a raised state are positioned to fit into the two slits 75.

[0099] The arm drive mechanism 73 can move the transport arm 65 linearly between above the cooling plate 53 and above the heating plate 54. The arm drive mechanism 73 comprises a horizontal movement section 73H and a vertical movement section 73V. The horizontal movement section 73H moves the transport arm 65 in the horizontal direction (y direction). The horizontal movement section 73H comprises, for example, an electric motor, a guide rail, and a timing belt. The vertical movement section 73V moves the transport arm 65 in the vertical direction (z direction). The vertical movement section 73V comprises, for example, an electric motor or an air cylinder.

[0100] As shown in Figure 9, the casing 60 is provided with an inlet / outlet 62. The substrate transport mechanism TR3 loads and unloads wafers W by inserting at least one of the two hands 47A and 47B from the inlet / outlet 62. As shown in Figure 9, exhaust is performed inside the casing 60. The substrate transport mechanism TR3 is also configured to load and unload temperature measurement wafers 1 by inserting at least one of the two hands 47A and 47B from the inlet / outlet 62. In Embodiment 1, the temperature measurement wafers 1 are transported between the heating plate 54 and the standby unit 45 by using the substrate transport mechanism TR3 and the local transport mechanism 59. In Embodiment 1, the substrate transport mechanism TR3 and the local transport mechanism 59 correspond to the transport unit in the present invention.

[0101] The receiving unit 46 receives information transmitted wirelessly from the transmitting unit 8 of the temperature measuring wafer 1. The receiving unit 46 is positioned, for example, on the ceiling of the transport space 42A and the ceiling of the transport space 42B. In Embodiment 1, the receiving unit 46 is positioned in the center of the ceiling of the transport space 42 in the x-direction. That is, as shown in Figure 4, the receiving unit 46 is positioned on the front side (bottom side in Figure 4) of the heat treatment unit 43B in a plan view.

[0102] As shown in Figure 4, the substrate processing apparatus 30 further includes a control unit 85, an operation unit 87, a storage unit 89, and a notification unit 91.

[0103] The control unit 85 includes information processing means such as a central processing unit (CPU). The control unit 85 comprehensively controls the operation of each part that constitutes the substrate processing apparatus 30. The control unit 85 includes a temperature control unit 86 and a cooling control unit 88. The temperature control unit 86 controls the operation of the heater disposed on the heating plate 54. By controlling the operation of the heater, the temperature of the heating plate 54 is adjusted. The temperature control unit 86 adjusts the temperature of the heating plate 54 based on the temperature data of the heating plate 54 transmitted from the transmission unit 8. The cooling control unit 88 controls each component of the substrate processing apparatus 1 so as to cool the temperature measuring wafer 1 when the temperature of the battery unit 7 exceeds the operating threshold F1. The cooling control unit 88 also controls each component of the substrate processing apparatus 1 so as to cool the temperature measuring wafer 1 when the temperature of the passive substrate 9 exceeds the operating threshold F1. As an example, the cooling control unit 88 controls the operation of the cooling plate 53 and the substrate transport mechanism TR3.

[0104] The operation unit 87 includes a display unit for displaying various information and an input unit for receiving input operations. An example of the display unit is a liquid crystal monitor. An example of the input unit is a keyboard, mouse, touch panel, various buttons, or a combination thereof. Information of input operations received by the operation unit 87 is transmitted to the control unit 85. The control unit 85 is configured to be able to comprehensively control the operation of each part constituting the substrate processing apparatus 30 in response to the input operations received by the operation unit 87.

[0105] The storage unit 89 includes, for example, at least one of ROM (Read-Only Memory), RAM (Random-Access Memory), and a hard disk. The storage unit 89 stores various conditions for the heating and cooling processes, operation programs necessary for controlling the substrate processing apparatus 30, and operation programs necessary for controlling the temperature measuring wafer 1, etc.

[0106] Furthermore, the memory unit 89 has pre-stored information on a predetermined value F4, an operating threshold F1, and an ideal temperature F3. The predetermined value F4 is a threshold related to the remaining power of the temperature measuring wafer 1. As will be described later, when the remaining power in the secondary battery 21 of the temperature measuring wafer 1 falls below the predetermined value F4, the control unit 85 controls each part of the substrate processing apparatus 30 to transport the temperature measuring wafer 1 to the standby unit 45 for charging.

[0107] The operating threshold F1 is a threshold value related to the temperature of the temperature measurement wafer 1. As described later, if the temperature of at least one of the battery substrate 7 and the power generation substrate 9 exceeds the operating threshold F1, the control unit 85 controls each part of the substrate processing apparatus 30 to prevent the temperature of the temperature measurement wafer 1 from rising.

[0108] The ideal temperature F3 is information regarding the ideal temperature of the heating plate 54. The control unit 85 adjusts the temperature of the heating plate 54 to the ideal temperature F3 based on the actual temperature data of the heating plate 54 obtained by the temperature measuring wafer 1.

[0109] The notification unit 91 notifies the user that the temperature of the battery board 7 or the power generation board 9 is above the operating threshold F1 by using sound, light, text, etc. Examples of the notification unit 91 include an alarm device that generates an alarm sound, or a display unit of the operation unit 87 that displays text information.

[0110] <Overview of substrate processing method> The following is an overview of the processing steps for wafer W performed using the substrate processing apparatus 30. First, the wafer W is transported from the indexer block 31 to the processing block 32. That is, in the indexer block 31, the substrate transport mechanism TR1 unloads the wafer W from the carrier C placed on the opener 33. The substrate transport mechanism TR1 then places the wafer W unloaded from the carrier C onto the substrate mounting section PS1 (or substrate mounting section PS2).

[0111] Next, the substrate transport mechanism TR3 transports the wafer W, which is placed on the substrate mounting section PS1 (or substrate mounting section PS2), to the coating unit 41 of the processing block 32. A coating process is performed on the wafer W transported to the coating unit 41, in which a processing liquid, such as a photoresist liquid, is applied. After the coating process is completed, the substrate transport mechanism TR3 transports the coated wafer W to the heat treatment unit 43. The wafer W transported to the heat treatment unit 43 is placed on a cooling plate 53 for cooling, and then placed on a heating plate 54 for heating.

[0112] After the cooling and heating processes, i.e., the heat treatment, are completed, the substrate transport mechanism TR3 removes the wafer W from the heat treatment unit 43 and places it on the substrate mounting section PS1 (or substrate mounting section PS2). The substrate transport mechanism TR2 then loads the wafer W onto the carrier C, which is mounted on the opener 34. With the coating and heat treatments completed in this manner, the processing steps for the wafer W are finished.

[0113] When performing heat treatment on a wafer W, it is required that the temperature of the heating plate 54 be strictly uniform throughout. Therefore, during startup of the substrate processing apparatus 30 and during periodic maintenance of the substrate processing apparatus 30, the temperature of each heating plate 54 is measured using the temperature measurement wafer 1. Then, the temperature of the heating plate 54 is adjusted according to the temperature data measured by the temperature measurement wafer 1.

[0114] <Temperature measurement method using a temperature-measuring wafer> Here, we will describe the process of measuring temperature using the temperature measuring wafer 1 in the substrate processing unit 100 according to Example 1. Figure 11 is a flowchart illustrating the series of steps for measuring temperature using the temperature measuring wafer 1.

[0115] Step S1 (Loading wafers into the substrate processing device) When the temperature measurement process begins, the temperature measurement wafer 1 is first brought into the substrate processing apparatus 30. The process of bringing the temperature measurement wafer 1 into the substrate processing apparatus 30 is the same as the process of bringing the wafer W into the substrate processing apparatus 30. That is, the temperature measurement wafer 1 is placed in the carrier C and placed on the mounting table 35. The substrate transport mechanism TR1 unloads the temperature measurement wafer 1 from the carrier C and brings it into the indexer block 31 through the opening 36. Note that the process of bringing the temperature measurement wafer 1 from outside the substrate processing apparatus 30 into the indexer block 31 may be performed using the substrate transport mechanism TR2.

[0116] In step S1, the temperature measuring wafer 1 is loaded into the substrate processing apparatus 30, and the secondary battery 21 is assumed to be fully charged beforehand using a commercial power supply or the like. That is, in step S1, the charge level of the secondary battery 21 is assumed to be 100%.

[0117] Step S2 (Transport the wafer to the heat treatment unit) When the temperature measurement wafer 1 is loaded into the indexer block 31, the process of transporting the temperature measurement wafer 1 to the heat treatment unit 43 is performed. Here, of the three rows of heat treatment units 43A to 43C arranged in the x direction, the temperature measurement of heat treatment unit 43A is performed first.

[0118] When measuring the temperature of the heat treatment unit 43 located in the upper processing block 32A, the substrate transport mechanism TR1 places the temperature measurement wafer 1 on the substrate mounting section PS1. The substrate transport mechanism TR3, located in the transport space 42A of the processing block 32A, holds the wafer body 2 of the temperature measurement wafer 1 placed on the substrate mounting section PS1 with its hand 47. Then, as shown in Figure 12, the substrate transport mechanism TR3 transports the temperature measurement wafer 1 from the substrate mounting section PS1 to the heat treatment unit 43. Figure 12 shows the state in which the temperature measurement wafer 1 has been transported from the substrate mounting section PS1 to the input / output port 62 of the heat treatment unit 43. In plan views such as Figure 12, the configuration of the temperature measurement wafer 1, excluding the notch 10 and the measurement substrate 5, is omitted.

[0119] When measuring the temperature of the heat treatment unit 43 located in the lower processing block 32B, the substrate transport mechanism TR1 places the temperature measurement wafer 1 on the substrate mounting section PS2. The substrate transport mechanism TR3, located in the transport space 42B of the processing block 32B, holds the wafer body 2 of the temperature measurement wafer 1 placed on the substrate mounting section PS1 with its hand 47 and transports it to the heat treatment unit 43.

[0120] Step S3 (Measure the temperature of the heating plate) After transporting the temperature measurement wafer 1 to the heat treatment unit 43, the temperature measurement wafer 1 is placed on the heating plate 54, and the temperature of the heating plate 54 is measured. Figures 13(a) to 13(c) and 14(a) to 14(c) illustrate the operation of measuring the temperature of the heating plate 54 in a predetermined heat treatment unit 43. The substrate transport mechanism TR3 is assumed to be holding the temperature measurement wafer 1 with its lower hand 47B. Also, for the sake of clarity, the temperature sensor 3 and measurement substrate 5 on the temperature measurement wafer 1 are omitted in Figure 13(a) and other figures.

[0121] Refer to Figure 13(a). The substrate transport mechanism TR3 is assumed to be holding the temperature measurement wafer 1 with its lower hand 47B. While holding the temperature measurement wafer 1, the substrate transport mechanism TR3 transports the temperature measurement wafer 1 into the internal space of the heat treatment unit 43 via the loading / unloading port 62 of the casing 60.

[0122] Refer to Figure 13(b). The substrate transport mechanism TR3 moves the lower hand 47B that holds the temperature measuring wafer 1 above the cooling plate 53. Then, it transfers the temperature measuring wafer 1 onto the three first support pins 55 that are provided so as to penetrate the cooling plate 53. That is, the first pin lifting mechanism 56 (see Figure 9) raises the three first support pins 55, thereby placing the temperature measuring wafer 1 on the three first support pins 55. Note that in Figure 13(b), the transport arm 65 of the local transport mechanism 59 is in contact with the cooling plate 53.

[0123] Refer to Figure 13(c). After transferring the temperature measurement wafer 1 onto the three first support pins 55, the lower hand 47B is retracted (retracted) from above the cooling plate 53. After the lower hand 47B has retracted, the local transport mechanism 59 raises the transport arm 65 so that it is away from the cooling plate 53.

[0124] Refer to Figure 14(a). By raising the transport arm 65, the temperature measuring wafer 1 is placed on the transport arm 65. Then, the first pin lifting mechanism 56 (see Figure 8) lowers the three first support pins 55. As a result, the temperature measuring wafer 1, which was placed on the three first support pins 55, is transferred to the transport arm 65 of the local transport mechanism 59. The transport arm 65 of the local transport mechanism 59 is movable between above the cooling plate 53 and above the heating plate 54. In Embodiment 1, a cooling mechanism is also provided on the transport arm 65. Therefore, while the transport arm 65 holds and transports the temperature measuring wafer 1, the temperature measuring wafer 1 is cooled by the transport arm 65.

[0125] Refer to Figure 14(b). Subsequently, the local transport mechanism 59 moves the transport arm 65, which holds the temperature measuring wafer 1, from above the cooling plate 53 to above the heating plate 54. After moving the transport arm 65 above the heating plate 54, the temperature measuring wafer 1 is transferred onto the three second support pins 57 that are provided to penetrate the heating plate 54. That is, the second pin lifting mechanism 58 (see Figure 9) raises the three second support pins 57, thereby placing the temperature measuring wafer 1 on the three second support pins 57.

[0126] Refer to Figure 14(c). After the temperature-measuring wafer 1 is placed on the three second support pins 57, the local transport mechanism 59 first moves the transport arm 65 from above the heating plate 54 to above the cooling plate 53, and then lowers the transport arm 65 to bring it into contact with the cooling plate 53. Then, the second pin lifting mechanism 58 (see Figure 9) lowers the three second support pins 57. This places the temperature-measuring wafer 1 on the heating plate 54. After that, the cover lifting mechanism 69 (see Figure 9) may lower the cover 68 to the extent that the position of the temperature-measuring wafer 1 does not move. Figure 15 is a plan view showing the state in which the temperature-measuring wafer 1 is placed on the heating plate 54 of the heat treatment unit 43A.

[0127] After the temperature measurement wafer 1 is placed on the heating plate 54, temperature measurement is performed on the heating plate 54. That is, the temperature of the heating plate 54, which is being heated under the control of the control unit 85, is measured by the temperature sensor 3 of the temperature measurement wafer 1. Each of the multiple temperature sensors 3 shown in Figure 1(a) detects the temperature of the heating plate 54. The signal from each of the multiple temperature sensors 3 is sent to the A / D converter 6 provided on the measurement board 5. The A / D converter 6 converts the signals sent from the temperature sensors 3 into temperature data. The multiple temperature sensors 3 are evenly distributed across the entire surface of the temperature measurement wafer 1. Therefore, temperature data is acquired at multiple locations across the entire surface of the heating plate 54.

[0128] Step S4 (Send temperature data) When temperature data of the heating plate 54 is acquired by temperature measurement, this temperature data is transmitted to the outside of the temperature measurement wafer 1. That is, the temperature data acquired by the digital conversion of the A / D converter 6 is sent to the transmission unit 8 of the measurement substrate 5. The transmission unit 8 transmits the temperature data of the heating plate 54 to the receiving unit 46 of the substrate processing apparatus 30 in real time. In other words, in Embodiment 1, with the temperature measurement wafer 1 placed on the heating plate 54, the steps of measuring the temperature of the heating plate 54 and transmitting the temperature data of the heating plate 54 to the outside of the temperature measurement wafer 1 are performed in succession. Furthermore, communication from the transmission unit 8 to the receiving unit 46 is performed wirelessly (see the symbol TL in Figure 15).

[0129] Step S5 (Adjust the heating plate temperature) When temperature data is transmitted from the temperature measurement wafer 1 to the substrate processing apparatus 30, the substrate processing apparatus 30 adjusts the temperature of the heating plate 54 based on the acquired temperature data. The temperature data received by the receiving unit 46 is transmitted to the control unit 85 of the substrate processing apparatus 30. The control unit 85 compares the actual temperature data of the heating plate 54 obtained by the temperature measurement wafer 1 with the information of the ideal temperature F3 stored in the storage unit 89. Then, the temperature control unit 86 of the control unit 85 controls the operation of the heater installed on the heating plate 54 so that the temperature of the heating plate 54 becomes the ideal temperature F3.

[0130] The heater's operation is controlled in real time, allowing the temperature of the heating plate 54 to be quickly reset. The temperature-measuring wafer 1, which is placed on the heating plate 54, measures the reset temperature of the heating plate 54 again and acquires temperature data. The reset temperature data is transmitted wirelessly from the transmitting unit 8 to the receiving unit 46, and then sent to the control unit 85. In this way, with the temperature-measuring wafer 1 placed on the heating plate 54, the operation of measuring the temperature of the heating plate 54 and the operation of resetting the temperature of the heating plate 54 are repeated in real time, allowing the temperature of the heating plate 54 to be quickly adjusted to the ideal temperature F3.

[0131] The temperature measurement wafer 1 is configured to transmit temperature data from the heating plate 54 to an external source wirelessly. The temperature measurement wafer 1 is configured to transmit temperature data while it is placed on the heating plate 54, which is the object of measurement. As a result, the control unit 85 of the substrate processing apparatus 30 can acquire temperature data from the heating plate 54 in real time and can repeatedly measure and reset the temperature of the heating plate 54 in real time. Consequently, the temperature of the heating plate 54 can be adjusted to the ideal temperature F3 quickly and accurately.

[0132] By performing the various processes up to step S5, power is consumed in each part of the temperature measuring wafer 1. Specifically, by performing operations such as measuring the temperature of the heating plate 54 and transmitting the temperature data of the heating plate 54, the power stored in the secondary battery 21 of the battery substrate 7 is reduced.

[0133] By the time of step S5, the process of measuring and adjusting the temperature of the heating plate 54 for one heat treatment unit 43 is completed. While the temperature measurement wafer 1 is placed on the heating plate 54, the process of generating electricity on the power generation substrate 9 (step S6) and the process of supplying the power generated on the power generation substrate 9 to the battery substrate 7 (step S7) are performed. In other words, steps S6 and S7 are performed in parallel while steps S3 to S5 are being executed. Steps S6 and S7 will be described below.

[0134] Step S6 (Generating electricity using the heat from the heating plate) When the temperature-measuring wafer 1 is placed on the heating plate 54, the process of step S6 begins. That is, power generation is performed in the power generation module 13 provided on the power generation substrate 9 using the heat from the heating plate 54. When the temperature-measuring wafer 1 is placed on the heating plate 54, as shown in Figure 16, the heat Ht from the heating plate 54, which is adjusted to a high temperature, is transmitted to the power generation module 13 via the wafer holding section 2.

[0135] As shown in Figure 16(a), in step S3, the wafer holder 2 is placed directly on the heating plate 54. The power generation module 13 is also in contact with the wafer holder 2. Therefore, the heat Ht from the heating plate 54 is efficiently transferred to the power generation module 13. Due to the transfer of heat Ht from the heating plate 54, the lower surface of the power generation module 13 becomes relatively hot. As a result, one end of the thermoelectric conversion element, which is located on the lower side of the power generation module 13, becomes hot.

[0136] On the other hand, the sides of the power generation module 13 are exposed to the atmosphere Am. Therefore, the heat Ct from the relatively low temperature atmosphere Am is transferred to the sides of the power generation module 13. As a result, the sides of the power generation module 13 become relatively cold. Also, since the top surface of the power generation module 13 is far from the heating plate 54 and close to the atmosphere Am, the top surface of the power generation module 13 also becomes relatively cold. As a result, the other ends of the thermoelectric conversion elements, which are arranged on the sides and top of the power generation module 13, become cold.

[0137] In Example 1, the power generation module 13 generates electricity by utilizing the difference between the heat Ht of the heating plate 54 and the heat Ct of the atmosphere Am. In other words, the power generation module 13 generates electricity by utilizing the temperature difference between the heating plate 54 and the atmosphere Am. By generating electricity using the heat Ht of the heating plate 54, power EL is generated in the power generation module 13, as shown in Figure 16(b). Step S6 is completed when the power generation module 13 generates power EL using the heat Ht of the heating plate 54.

[0138] In Embodiment 1, while the transport arm 65 holds and transports the temperature-measuring wafer 1, the temperature-measuring wafer 1 is cooled by the transport arm 65, which has a built-in cooling mechanism. Therefore, the atmosphere Am is cooled by the temperature-measuring wafer 1, which is at a low temperature. As a result, when the transport arm 65 places the temperature-measuring wafer 1 on the heating plate 54, the temperature difference between the heating plate 54 and the atmosphere Am becomes even larger. By increasing the temperature difference between the heating plate 54 and the atmosphere Am, the power EL generated by the power generation module 13 can be increased. In other words, by placing the temperature-measuring wafer 1 on the heating plate 54 while it is cooled, the power EL generated by the power generation module 13 can be increased.

[0139] Step S7 (Supplying the generated electricity) When the power generation module 13 generates electricity EL using the heat Ht of the heating plate 54, it supplies the electricity EL generated by thermoelectric power generation to the battery board 7. That is, as indicated by the symbol Se in Figure 17, the power generation board 9 uses a power transmission unit (not shown) to supply the electricity EL generated in the power generation module 13 from the power generation board 9 to the battery board 7. The electricity EL supplied to the battery board 7 is stored in the secondary battery 21, as shown in Figure 17. The secondary battery 21 supplies the stored electricity to the transmission unit 8, etc. That is, the secondary battery 21 supplies the electricity EL generated in the power generation module 13 to the transmission unit 8, etc.

[0140] In this way, the stored power of the secondary battery is consumed by the processes up to step S5, while in steps S6 to S7, thermoelectric power generation is performed on the power generation substrate 9, and the power EL generated by this thermoelectric power generation charges the secondary battery 21. That is, the temperature measuring wafer 1 according to Embodiment 1 has a configuration in which, while placed on the heating plate 54, the stored power of the secondary battery 21 consumed in the transmitting unit 8 and the like is supplemented by the power EL generated on the power generation substrate 9. Therefore, the rate at which the charge rate of the secondary battery 21 decreases in the processes up to step S5 can be reduced at least. In particular, if the amount of power EL generated on the power generation substrate 9 is equal to or greater than the amount of power consumed in the processes up to step S5, a reduction in the stored power of the secondary battery 21 can be avoided. In Embodiment 1, all of the power consumed in the temperature measuring wafer 1 is to be supplemented by the power EL generated by the power generation substrate 9.

[0141] After the process up to step S7 is completed, the subsequent process branches depending on the selection of steps Q1 and QF shown in Figure 11. In other words, the subsequent process branches depending on the state of the temperature measurement wafer 1.

[0142] In step Q1, the selection is branched based on the temperatures of the battery substrate 7 and the power generation substrate 9 on the temperature measurement wafer 1. The temperature of the battery substrate 7 is measured by the battery temperature detection unit 11 at appropriate intervals. The temperature of the power generation substrate 9 is measured by the substrate temperature detection unit 14 at appropriate intervals. The temperature data of the battery substrate 7 is transmitted from the battery temperature detection unit 11 to the transmission unit 8 of the measurement substrate 5. The temperature data of the power generation substrate 9 is transmitted from the substrate temperature detection unit 14 to the transmission unit 8 of the measurement substrate 5. The transmission unit 8 wirelessly transmits the temperature data of the battery substrate 7 and the temperature data of the power generation substrate 9 to the receiving unit 46. The control unit 85 can make the selection in step Q1 by comparing this temperature data with the operating threshold F1 stored in the storage unit 89.

[0143] If the temperature of both the battery substrate 7 and the power generation substrate 9 is below the operating threshold F1, it is determined that the temperatures of the battery substrate 7 and the power generation substrate 9 are sufficiently low, and it is possible to move to the next heat treatment unit 43 and continue measuring the temperature of the heating plate 54. In this case, the selection of step Q1 is "No". On the other hand, if at least one of the temperatures of the battery substrate 7 and the power generation substrate 9 is above the operating threshold F1, it is determined that the temperature of either the battery substrate 7 or the power generation substrate 9 is excessively high, and if the operation to move to the next heat treatment unit 43 and continue measuring the temperature of the heating plate 54 is continued, the operation of the temperature measurement wafer 1 may stop due to the high temperature of either the battery substrate 7 or the power generation substrate 9, making temperature measurement impossible. In this case, the selection of step Q1 is "Yes".

[0144] Step QF branches the selection based on whether the temperature measurement process using the temperature measurement wafer 1 has been completed for all heat treatment units 43 whose temperatures are scheduled to be measured. If there are any heat treatment units 43 for which the temperature measurement and temperature adjustment of the heating plate 54 have not been completed, the selection in Step QF is "No". On the other hand, if the temperature measurement and temperature adjustment of the heating plate 54 have been completed for all heat treatment units 43, the selection in Step QF is "Yes".

[0145] The operation of the temperature measurement wafer 1, which is performed according to the selection of step Q1 and step QF, will be described below.

[0146] (A) When performing temperature measurements on the following heat treatment unit First, let's explain the case where both Step Q1 and Step QF are selected as "No". If both Step Q1 and Step QF are selected as "No", the temperature measurement wafer 1 moves to the next heat treatment unit 43 to perform tasks such as temperature measurement. In other words, if all selections in Step Q1 are "No", it is determined that the temperature measurement wafer 1 can continue operating in its current state. Then, because Step QF is selected as "No", it is determined that there is a heat treatment unit 43 that needs to perform tasks such as temperature measurement. Here, we will explain the case where the wafer moves from the top heat treatment unit 43A to the second heat treatment unit 43A from the top to continue temperature measurement (see Figure 8).

[0147] If both step Q1 and step QF are selected as "No", the process returns to step S2 and steps S2 to S7 are repeated. That is, while the process of charging the secondary battery 21 with power EL generated by the heat Ht of the heating plate 54 (steps S6 to S7) is performed, once the process of adjusting the temperature of the heating plate 54 in step S5 is completed, the temperature measurement wafer 1 is transported from the top heat treatment unit 43A to the second heat treatment unit 43A from the top (step S2).

[0148] If step S2 is to be performed again after steps S2 to S7 have been completed, the temperature measurement wafer 1 is first removed from the heat treatment unit 43. The operation of removing the temperature measurement wafer 1 from the heat treatment unit 43 is performed in the reverse order of the explanation in Figures 13(a) to 13(d) and Figures 14(a) to 14(b). After the substrate transport mechanism TR3 removes the temperature measurement wafer 1 from the uppermost heat treatment unit 43A, the substrate transport mechanism TR3 moves from the uppermost heat treatment unit 43A to the second-highest heat treatment unit 43A while holding the temperature measurement wafer 1. The second moving mechanism 52 lowers the substrate transport mechanism TR3 in the z direction, allowing the substrate transport mechanism TR3 to move to the second-highest heat treatment unit 43A from the top.

[0149] After the substrate transport mechanism TR3 is moved by the second moving mechanism 52, the temperature measurement wafer 1 is placed on the heating plate 54 located in the second heat treatment unit 43A from the top. The process of placing the temperature measurement wafer 1 on the heating plate 54 is as described using Figures 13(a) to 13(d) and Figures 14(a) to 14(b). After placing the temperature measurement wafer 1 on the heating plate 54, the heating plate 54 located in the second heat treatment unit 43A from the top is subjected to temperature measurement, temperature data transmission, and temperature adjustment (steps S3 to S5). In parallel with steps S3 to S5, the process of generating power EL and the process of charging the secondary battery 21 with power EL are performed (steps S6 to S7).

[0150] After the process up to step S5 is completed for the second heat treatment unit 43A from the top, the process branches again according to the selection of steps Q1 and QF. Thereafter, the series of processes is repeated until the selection of step QF is "Yes".

[0151] (B) When the temperature of the wafer used for temperature measurement rises Next, we will explain the case where the selection in step Q1 is "Yes". If the selection in step Q1 is "Yes", then steps S8 and S9 are performed.

[0152] By repeating steps S2 to S7 for multiple heat treatment units 43, the temperature of the temperature measuring wafer 1 rises. In particular, placing the temperature measuring wafer 1 on the heating plate 54, which is in a high-temperature state, makes it easier for the temperature of the temperature measuring wafer 1 to rise. If the temperature of the temperature measuring wafer 1 rises excessively, the operating efficiency of the temperature measuring wafer 1 decreases. In particular, if the temperatures of the battery substrate 7 and the power generation substrate 9 rise excessively, the secondary battery 21 and various integrated circuits deteriorate, which tends to reduce the performance of the temperature measuring wafer 1.

[0153] Therefore, the substrate processing system 100 according to Embodiment 1 is configured to continuously detect the temperatures of the battery substrate 7 and the power generation substrate 9, which are arranged on the temperature measurement wafer 1. The substrate processing system 100 is configured to cool the temperature measurement wafer 1 when the temperature of either the battery substrate 7 or the power generation substrate 9 exceeds the operating threshold F1 (step S8), and to notify information that the battery substrate 7 or the power generation substrate 9 is at a high temperature (step S9).

[0154] The following describes the steps S8 and S9, which are performed when the selection in step Q1 is "Yes".

[0155] Step S8 (Wafer Cooling) If the temperature of either the battery board 7 or the power generation board 9 exceeds the operating threshold F1, the control unit 85 controls various configurations to cool the temperature measuring wafer 1. The operation for cooling the temperature measuring wafer 1 may be selected as appropriate. For example, a cooling mechanism can be provided on the transport arm 65, and the temperature measuring wafer 1 can be cooled by the transport arm 65 holding the temperature measuring wafer 1.

[0156] Another example is to perform the cooling process on the cooling plate 53. The situation in which the temperature of the battery substrate 7 and the power generation substrate 9 exceeds the operating threshold F1 almost always occurs when the temperature measurement wafer 1 is placed on the heating plate 54. Therefore, if the selection of step Q1 is "Yes", the cooling control unit 88 of the control unit 85 can quickly transport the temperature measurement wafer 1 from the heating plate 54 to the cooling plate 53 and rapidly cool the temperature measurement wafer 1 on the cooling plate 53. By performing such a cooling process, the temperature of both the battery substrate 7 and the power generation substrate 9 will quickly fall below the operating threshold F1.

[0157] Step S9 (Notification of temperature rise) In Embodiment 1, step S9 is performed in parallel with the process related to step S8. When step S11 is started, the control unit 85 activates the notification unit 91. The notification unit 91 generates a warning sound or light to notify the operator that the temperature of the battery board 7 or the power generation board 9 has risen to or above the operating threshold F1. As another example of a configuration in which the notification unit 91 notifies information regarding the temperature rise, characters or images indicating that the temperature of the battery board 7 or the power generation board 9 has risen to or above the operating threshold F1 may be displayed on the display unit of the operation unit 87.

[0158] The notification unit 91 notifies the operator of information regarding the temperature rise, allowing the operator to quickly know that the temperature of the battery substrate 7 or the power generation substrate 9 has risen above the operating threshold F1. When the operator receives the information notified by the notification unit 91, they may, for example, perform an operation to remove the temperature measuring wafer 1 from the substrate processing apparatus 30, retrieve the temperature measuring wafer 1 whose temperature has risen, and bring a new temperature measuring wafer 1 into the substrate processing apparatus 30.

[0159] As described above, the substrate processing unit 100 according to Embodiment 1 is configured to perform steps S10 and S11 when the temperature of the battery substrate 7 or the power generation substrate 9 on the temperature measuring wafer 1 rises to or above the operating threshold F1. By performing steps S10 and S11, even if the temperature of the temperature measuring wafer 1 rises to or above the operating threshold F1, the temperature of the temperature measuring wafer 1 can be rapidly reduced. As a result, the situation in which the performance of the temperature measuring wafer 1 deteriorates due to the temperature of the temperature measuring wafer 1 rising to or above the operating threshold F1 can be more reliably avoided.

[0160] (C) When temperature measurement has been completed for all heating plates 54 Finally, the case where step QF is selected as "Yes" will be explained. Step QF is selected as "Yes" when steps S2 to S7 have been completed for all heat treatment units 43 selected as targets for temperature measurement. In this case, the control unit 85 controls the substrate transport mechanisms TR1 to TR3 to transport the temperature measurement wafer 1 to the outside of the substrate processing apparatus 30. Specifically, the substrate transport mechanism TR3 holds the temperature measurement wafer 1 and transports it from the holding block 32 to the substrate mounting section PS1 of the indexer block 31.

[0161] The substrate transport mechanism TR1 holds the temperature measurement wafer 1 placed on the substrate mounting section PS1 and transports it to the outside of the indexer block 31 through the opening 36. Then the substrate transport mechanism TR1 loads the temperature measurement wafer 1 into the carrier C. The operator retrieves the temperature measurement wafer 1 loaded into the carrier C. The series of operations is completed with the above steps.

[0162] <Effects of the configuration in Example 1> The temperature measuring wafer 1 according to Example 1 includes a temperature sensor 3 for measuring the temperature of the heating plate 54, a transmitting unit 8 for transmitting temperature data from the heating plate 54, a battery board 7 for supplying power to the transmitting unit 8 and the like, and a power generation board 9. The power generation board 9 includes a power generation module 13, which generates electricity using the heat from the heating plate 54. The power EL generated by the thermoelectric power generation in the power generation module 13 is stored in the secondary battery 21 of the battery board 7, and the battery board 7 supplies the power EL to the transmitting unit 8 and the like. In other words, Example 1 has a configuration that enables power generation in the temperature measuring wafer 1. Furthermore, the power consumed by the temperature measuring wafer 1 through the processes up to step S5 is compensated for by the power EL generated by the power generation board 9 of the temperature measuring wafer 1. By compensating for the power consumption of the temperature measuring wafer 1 with power EL, the rate at which the charge level of the secondary battery 21 of the temperature measuring wafer 1 decreases can be slowed down. As a result, it is possible to more reliably avoid the temperature measuring operation of the temperature measuring wafer 1 being hindered due to the depletion of power stored in the secondary battery 21.

[0163] In Example 1, the power generation module 13 generates electricity using the heat Ht of the heating plate 54. In other words, in Example 1, the power EL is generated by effectively utilizing the heat Ht of the heating plate 54, which is essential for operating the substrate processing apparatus 30. In this case, there is no need to install a new device to supply the energy necessary for the power generation module 13 to generate electricity. Therefore, by arranging the power generation substrate 9 on the temperature measurement wafer 1, the operating efficiency of the temperature measurement wafer 1 can be greatly improved while utilizing the existing configuration. In addition, it is possible to avoid a decrease in the energy efficiency of the temperature measurement wafer 1 due to power generation in the power generation module 13.

[0164] Conventional temperature-measuring wafers, such as the one described in Patent Document 1, have difficulty supplying power to the secondary battery while measuring the temperature of the heating plate. Therefore, in conventional configurations, the stored power of the secondary battery decreases rapidly when measuring the temperature of the heating plate. In other words, in conventional configurations, in addition to the process of transporting the temperature-measuring wafer to the base station for the purpose of reading out temperature data, a process of transporting the temperature-measuring wafer to the base station for the purpose of charging the secondary battery is also required. As a result, there is a concern that the operating efficiency of the temperature-measuring wafer will further decrease.

[0165] On the other hand, in Embodiment 1, the power consumed by the transmitting unit 8 and other components is supplemented by power EL generated by the power generation module 13. This configuration allows for a longer operating time of the temperature measurement wafer 1. In particular, if the power generation efficiency of the power generation module 13 is sufficiently high, it is possible to avoid depleting the stored power of the secondary battery 21 before completing steps S2 to S7 for all heating plates 54. In this case, the step of transporting the temperature measurement wafer 1 to the base station for the purpose of charging the secondary battery 21 becomes unnecessary.

[0166] In Embodiment 1, the power generation substrate 9 is placed on the wafer holding portion 2 of the temperature measurement wafer 1. That is, when sequentially moving to multiple heat treatment units 43 to measure the temperature of each heating plate 54, by using one power generation substrate 9, it is possible to repeatedly perform thermoelectric power generation on the heating plate 54 to charge the secondary battery 21 while measuring the temperature of the heating plate 54. In this case, it is not necessary to place a mechanism for charging the secondary battery 21 in each heat treatment unit 43. Therefore, it is possible to realize a configuration that reduces the power consumption rate of the secondary battery 21 while avoiding complexity of the substrate processing apparatus 30.

[0167] Furthermore, the substrate processing system 100 according to Example 1 improves the accuracy of temperature adjustment of the heating plate 54 and enables rapid temperature adjustment compared to conventional systems. Conventional temperature measuring wafers, as shown in Patent Document 1, are equipped with memory and store the temperature data of the heating plate in the memory after measuring the temperature of the heating plate. After storing the temperature data for multiple heating plates in the memory, the temperature measuring wafer is removed from the heating plate and transported to the base station. After transporting the temperature measuring wafer to the base station, all temperature data is read from the memory of the temperature measuring wafer using a data reading unit installed in the base station. Then, the temperature of each heating plate is adjusted using the read temperature data for each heating plate.

[0168] In this conventional configuration, temperature data cannot be read until the temperature of all heating plates has been measured, making it difficult to quickly adjust the temperature of the heating plates. Furthermore, in this conventional configuration, the temperature measurement wafer has been removed from the heating plate by the time the temperature data is read, so even if temperature adjustments are made according to the temperature data, it is difficult to quickly confirm whether the heating plate has been accurately adjusted to the intended temperature.

[0169] Furthermore, in conventional configurations, such as that described in Patent Document 1, a process is required to transport the temperature-measuring wafer to a base station for the purpose of reading the temperature data stored on the temperature-measuring wafer. During the transport of the temperature-measuring wafer to the base station, the temperature of the heating plate cannot be measured. In other words, the proportion of the time spent measuring the temperature of the heating plate relative to the total operating time of the temperature-measuring wafer decreases. As a result, there is a concern that the operating efficiency of the temperature-measuring wafer will decrease in conventional configurations.

[0170] In contrast to the conventional configuration, in Embodiment 1, with the temperature measurement wafer 1 placed on the heating plate 54, the transmitting unit 8 transmits temperature data to the outside of the temperature measurement wafer 1. That is, immediately after placing the temperature measurement wafer 1 on the heating plate 54 and measuring the temperature of the heating plate 54, the transmitting unit 8 can quickly transmit the temperature data of the heating plate 54 in real time. Therefore, temperature data of the heating plate 54 can be quickly acquired using the temperature measurement wafer 1. Furthermore, with the temperature measurement wafer 1 placed on the heating plate 54, which is the temperature to be measured, the process of acquiring temperature data of the heating plate 54 and the process of adjusting the temperature of the heating plate 54 based on said temperature data are performed. That is, after performing the process of adjusting the temperature of the heating plate 54 based on the temperature data, the temperature data of the heating plate 54 can be measured again with the temperature measurement wafer 1 still placed on the heating plate 54, so it is possible to quickly confirm whether the heating plate has been accurately adjusted to the expected temperature. As a result, in Embodiment 1, the temperature of the heating plate 54 can be adjusted quickly and accurately.

[0171] In this configuration of Embodiment 1, since the temperature data of the heating plate 54 is transmitted in real time, there is no need to place storage electronic devices, such as memory, on the temperature measurement wafer 1. Therefore, it is possible to avoid situations in which electronic devices such as memory malfunction due to high temperatures. As a result, the heat resistance of the temperature measurement wafer 1 can be improved.

[0172] In Example 1, the process of transporting the temperature measurement wafer to the base station for the purpose of reading temperature data is unnecessary. Therefore, if the power generation efficiency of the power generation module 13 of the power generation substrate 9 is sufficiently high, and the process of transporting it to the base station for the purpose of charging the secondary battery 21 is unnecessary, it becomes unnecessary to place a base station in the substrate processing apparatus 30. As a result, the configuration of the substrate processing apparatus 30 can be further simplified. In addition, by eliminating the process of transporting the temperature measurement wafer 1 to the base station, the operating efficiency of the temperature measurement wafer 1 can be greatly improved.

[0173] In Example 1, the battery substrate 7 is equipped with a secondary battery 21. That is, the battery substrate 7 uses the secondary battery 21 to supply power to various components of the temperature measuring wafer 1, such as the transmitting unit 8. Furthermore, the secondary battery 21 on the battery substrate 7 has a flattened shape. In this case, the thickness of the temperature measuring wafer 1 on which the battery substrate 7 is installed can be reduced, so the temperature measuring wafer 1 can be automatically transported using the substrate transport mechanisms TR1 to TR3, just like the wafer W. Specifically, in the substrate processing apparatus 30, the heat treatment unit 43 tends to be stacked in more layers, so the slit width (width in the z direction) of the loading / unloading port 62 of the heat treatment unit 43 tends to be smaller. Therefore, in order to realize a configuration in which the substrate transport mechanism TR3 automatically transports the temperature measuring wafer 1 via the loading / unloading port 62 of the heat treatment unit 43, the thickness of the temperature measuring wafer 1 must be 4 mm or less throughout. Conventionally, it has been difficult to miniaturize secondary batteries and the like, so it has been difficult to make the temperature measuring wafer equipped with a secondary battery thin enough to be automatically transported.

[0174] In contrast, in Example 1, the secondary battery 21 has a flattened shape. For example, multiple secondary batteries 21 are electrically connected in series and arranged along the surface of the wafer body 2. This allows for a larger capacity of the battery substrate 7 while making the battery substrate 7 thinner. As a result, automatic transport of the temperature measuring wafer 1 equipped with the secondary battery 21 becomes possible, improving the heat resistance and operating efficiency of the temperature measuring wafer 1. In particular, the battery substrate 7 has a structure in which the heat insulating sheet 15, the lower plate 17b of the housing 17, the tape 27, the heat insulating sheet 23, the battery unit 19, the heat insulating sheet 25, and the tape 29 are stacked in order from the side closest to the wafer body 2 in the thickness direction. With this structure, the heat resistance of the battery substrate 7 can be improved while reducing the thickness d of the battery substrate 7, including the portion of the wafer body 2, to 4 mm or less. That is, by having a stacked structure in which the secondary battery 21 is sandwiched between multiple heat insulating sheets, the heat resistance of the battery substrate 7 can be improved while reducing the thickness of the battery substrate 7 equipped with the secondary battery 21.

[0175] Furthermore, with the temperature-measuring wafer 1 placed on the heating plate 54, the transmitting unit 8 wirelessly transmits the temperature data of the heating plate 54, measured by the temperature sensor 3, to the outside of the temperature-measuring wafer 1. The temperature data transmitted from the transmitting unit 8 is received by the receiving unit 46 of the substrate processing apparatus 30. In other words, the substrate measurement unit 100 is configured to communicate wirelessly between the temperature-measuring wafer 1 and the substrate processing apparatus 30.

[0176] Since the temperature measurement wafer 1 is equipped with a transmitting unit 8, a communication wire is not required. In other words, the temperature measurement wafer 1 can be operated wirelessly. With wired temperature measurement wafers that use a communication wire, the range in which the temperature measurement wafer can be transported is limited by the length of the communication wire, which reduces the versatility of the temperature measurement wafer. Furthermore, when transporting wired temperature measurement wafers, twisting or breakage of the communication wire may occur, raising concerns that it may become difficult to transmit information from the temperature measurement wafer to an external source. In addition, it is difficult to automate the process of loading wired temperature measurement wafers into the substrate processing equipment, requiring manual loading of the temperature measurement wafer into the substrate processing equipment. Unlike such conventional temperature measurement wafers, in Embodiment 1, the temperature measurement wafer 1 is operated wirelessly, thus avoiding the decrease in operational efficiency caused by the communication wire. Therefore, the operational efficiency of the temperature measurement wafer 1 can be improved.

[0177] In Embodiment 1, the temperature measuring wafer 1 includes a battery temperature detection unit 11 and a substrate temperature detection unit 14. The battery temperature detection unit 11 measures the temperature of the battery substrate 7 and transmits the temperature data of the battery substrate 7 to the transmission unit 8. The substrate temperature detection unit 14 measures the temperature of the power generation substrate 9 and transmits the temperature data of the power generation substrate 9 to the transmission unit 8. The transmission unit 8 is configured to wirelessly transmit the temperature data of the battery substrate 7 and the temperature data of the power generation substrate 9 to the receiving unit 46. In other words, the temperature measuring wafer 1 can transmit not only the temperature data of the heating plate 54, but also the temperature data of the battery substrate 7 and the temperature data of the power generation substrate 9 to the outside of the temperature measuring wafer 1.

[0178] Each temperature data received by the receiving unit 46 is transmitted to the control unit 85. Based on the received temperature data, the control unit 85 controls each part of the substrate processing apparatus 30 to prevent the temperature measuring wafer 1 from overheating if the temperature of either the battery substrate 7 or the power generation substrate 9 exceeds the operating threshold F1. One example of control to prevent the temperature measuring wafer 1 from overheating is to move the temperature measuring wafer 1 away from the heating plate 54 and cool it on the cooling plate 53. In Embodiment 1, by providing a configuration that measures the temperatures of the battery substrate 7 and the power generation substrate 9, the situation in which the temperature measuring wafer 1 overheats and its performance deteriorates can be quickly and reliably avoided.

[0179] Furthermore, in Embodiment 1, the substrate processing apparatus 30 is equipped with a notification unit 91. When the temperature of either the battery substrate 7 or the power generation substrate 9 exceeds the operating threshold F1, the notification unit 91 notifies the operator of this information. The operator can quickly learn from the notification unit 91 that the temperature of either the battery substrate 7 or the power generation substrate 9 has exceeded the operating threshold F1, and can quickly perform operations to avoid overheating of the temperature measurement wafer 1. Therefore, it is possible to more reliably avoid deterioration of the performance of the temperature measurement wafer 1 caused by the battery substrate 7 or the power generation substrate 9 being heated above the operating threshold F1. [Examples]

[0180] Next, Embodiment 2 of the present invention will be described with reference to the drawings. Note that components that overlap with those in Embodiment 1 are denoted by the same reference numerals, and detailed descriptions are omitted. The substrate processing system 100A according to Embodiment 2 consists of a temperature measuring wafer 1 and a substrate processing apparatus 30A. The substrate processing apparatus 30A according to Embodiment 2 differs from the substrate processing apparatus 30 according to Embodiment 1 in that it includes a holding and rotating section 76, as shown in Figure 18.

[0181] The holding and rotating unit 76 rotates while holding the temperature measuring wafer 1, thereby changing the direction in which the measurement substrate 5 of the temperature measuring wafer 1 faces. Figure 19(a) is a longitudinal cross-sectional view showing the holding and rotating unit 76. Figure 19(b) is a plan view showing the holding and rotating unit 76. As an example, the holding and rotating unit 76 includes a notch detection unit 78, a centering mechanism 79, a spin chuck 81, and a rotation drive unit 83.

[0182] The spin chuck 81 holds the back surface of the temperature measuring wafer 1, for example, by vacuum suction. The spin chuck 81 may also hold the edge of the temperature measuring wafer 1 with three or more holding pins (not shown). The rotation drive unit 83 rotates the spin chuck 81 around the vertical axis AX3. The rotation drive unit 83 is equipped with an electric motor (for example, a stepping motor). The holding and rotating unit 76 corresponds to the rotation mechanism in this invention.

[0183] The notch detection unit 78 is composed of, for example, a transmissive or reflective optical sensor. The notch detection unit 78 detects the presence or absence of a notch 10 provided on the temperature measuring wafer 1. In Figure 19(a), the notch detection unit 78 performs the detection operation at the left edge of the temperature measuring wafer 1. The detection position by the notch detection unit 78 can be any position on the outer edge of the temperature measuring wafer 1. The notch detection unit 78 is configured to move above the temperature measuring wafer 1 along the outer edge of the temperature measuring wafer 1. By moving the notch detection unit 78 to an appropriate position and detecting the presence or absence of the notch 10, the orientation of the temperature measuring wafer 1 can be appropriately adjusted so that the notch 10 on the temperature measuring wafer 1 is located in an appropriate direction relative to the center of the temperature measuring wafer 1.

[0184] The centering mechanism 79 aligns the vertical axis AX3, which is the rotation center of the holding and rotating part 76, with the center of the temperature measuring wafer 1. As shown in Figure 19(b), the centering mechanism 79 may include, for example, two members 79A and 79B for clamping the temperature measuring wafer 1 from two horizontal directions. Each of the members 79A and 79B is driven by, for example, an electric motor (not shown).

[0185] The location where the holding and rotating part 76 is positioned in the substrate processing apparatus 30A can be selected as appropriate. For example, the holding and rotating part 76 may be positioned in the heat treatment unit 43. Alternatively, if the substrate mounting section PS1 or the like is equipped with a configuration that adjusts the position of the substrate W by rotating it around the z-axis, this configuration may be used as the holding and rotating part 76. In this case, there is no need to install a new device for adjusting the orientation of the measurement substrate 5 on the temperature measurement wafer 1, thus avoiding complexity in the substrate processing apparatus 30A.

[0186] <Temperature measurement method in Example 2> Here, we will describe the process of measuring temperature using the temperature measuring wafer 1 in the substrate processing unit 100A according to Example 2. Figure 20 is a flowchart illustrating the series of steps for measuring temperature using the temperature measuring wafer 1 in Example 2. Steps S1 to S9 in Example 2 are the same as in Example 1, so a detailed explanation will be omitted. However, the process in Example 2 differs from the process in Example 1 in that a selection in step Q2 is made between step S1 and step S2.

[0187] In step Q2, the selection branches depending on whether or not to change the orientation of the measurement substrate 5 on the temperature measurement wafer 1. For example, schedule data regarding the order in which the temperature measurement wafer 1 measures multiple heat treatment units 43 can be stored in the storage unit 89, and the control unit 85 can make a decision using this schedule data to make the selection in step Q1.

[0188] Next, if the heat treatment unit 43 to be measured on the temperature measurement wafer 1 is in the same row as the heat treatment unit 43 that was most recently measured, the positional relationship between the measurement substrate 5 and the receiving unit 46 in a plan view does not change, so there is no need to change the orientation of the measurement substrate 5. In this case, the selection for step Q1 is "No". As a specific example, if the temperature of a heat treatment unit 43A located in the top row of the left column is measured, and then the temperature of a heat treatment unit 43A located in the second row from the top of the left column is measured, the selection for step Q1 is "No".

[0189] On the other hand, when the temperature measurement wafer 1 performs temperature measurement on the first heat treatment unit 43, it is necessary to change the orientation of the measurement substrate 5 according to the position of the heating plate 54 in the heat treatment unit 43. Therefore, when steps S2 to S7 are performed first, the selection for step Q1 is "Yes".

[0190] Furthermore, if the next heat treatment unit 43 to be measured on the temperature measurement wafer 1 is in a different column than the heat treatment unit 43 that was most recently measured, the positional relationship between the measurement substrate 5 and the receiving unit 46 in a plan view changes, so it is preferable to change the orientation of the measurement substrate 5. In this case, the selection of step Q1 is "Yes". As a specific example, if the temperature of heat treatment unit 43A located in the left column is measured, and then the temperature of heat treatment unit 43B located in the center column is measured, the selection of step Q1 is "Yes".

[0191] (D) When changing the orientation of the measurement board Here, we will explain the behavior when the selection in step Q2 is "Yes". If the selection in step Q2 is "Yes", the process in step S10 is performed before the process in step S2 is started.

[0192] As a first example, the operation when steps S2 to S7 are performed on the heat treatment unit 43A first will be described. In this case, the heat treatment unit 43 that will be the next to be measured on the temperature measurement wafer 1 is the heat treatment unit 43A. Therefore, after the temperature measurement wafer 1 is loaded into the substrate processing apparatus 30 in step S1, the orientation of the measurement substrate 5 is adjusted to match the position of the heating plate 54 in the heat treatment unit 43A by performing the process in step S10.

[0193] Step S10 (The wafer is rotated in the holding and rotating section) In step S10, the orientation of the measurement substrate 5 is adjusted using the holding and rotating unit 76. That is, when step S10 begins, the temperature measurement wafer 1 is transported to the holding and rotating unit 76 using an appropriate transport device, such as the substrate transport mechanism TR3. After the temperature measurement wafer 1 is placed on the holding and rotating unit 76, the centering mechanism 79 aligns the center of the temperature measurement wafer 1 with the vertical axis AX3, which is the rotation center of the holding and rotating unit 76, by having two members 79A and 79B sandwich the temperature measurement wafer 1 from the horizontal direction. After that, the two members 79A and 79B move away from the temperature measurement wafer 1. Also, the spin chuck 81 of the holding and rotating unit 76 enables the holding of the temperature measurement wafer 1 by vacuum suction. As shown in Figure 19, after the temperature measurement wafer 1 is placed and held in the spin chuck 81, the hand 47 of the substrate transport mechanism TR3 retracts from the standby unit 45.

[0194] After the temperature measurement wafer 1 is held in the holding and rotating part 76, the temperature measurement wafer 1 is rotated. That is, with the temperature measurement wafer 1 mounted and held in the spin chuck 81, the control unit 85 rotates the holding and rotating part 76 around the vertical axis AX3 (z-axis). The orientation of the measurement substrate 5 changes according to the direction and angle of rotation of the holding and rotating part 76 around the vertical axis AX3.

[0195] Subsequently, while the temperature measuring wafer 1 is rotated by the holding and rotating unit 76, the notch detection unit 78 detects the position of the notch 10 on the temperature measuring wafer 1. This rotation is performed, for example, one or more times. Based on the detected position (angle) of the notch 10, the control unit 85 adjusts the angle of the temperature measuring wafer 1. That is, the control unit 85 adjusts the orientation of the measurement substrate 5 on the temperature measuring wafer 1, using the notch 10 of the temperature measuring wafer 1 as a reference.

[0196] When the next object to be measured by the temperature measuring wafer 1 is the heating plate 54 of the heat treatment unit 43A, the control unit 85 controls the rotation drive of the holding and rotating unit 76, thereby adjusting the orientation Ph of the measurement substrate 5 in plan view from the initial state shown in Figure 21(a) to the state shown in Figure 21(b). The orientation Ph of the measurement substrate 5 shown in Figure 21(b) is the direction suitable for the operation of transmitting temperature data of the heating plate 54 in the heat treatment unit 43A. By adjusting the orientation Ph of the measurement substrate 5, the process of step S10 is completed.

[0197] As shown in Figure 20, once step S10 is completed, steps S2 to S7 begin. Specifically, the substrate transport mechanism TR3 transports the temperature measurement wafer 1 from the holding and rotating section 76 to the heat treatment unit 43A (step S2). The temperature measurement wafer 1 is then placed on the heating plate 54 of the heat treatment unit 43A, and the temperature of the heating plate 54 is measured using the temperature sensor 3 (step S3). Figure 22 shows the temperature measurement wafer 1, with the orientation Ph of the measurement substrate 5 adjusted to the direction shown in Figure 21(b), placed on the heating plate 54 of the heat treatment unit 43A. For ease of explanation, in plan views such as Figure 22, the components of the temperature measurement wafer 1 other than the notch 10 and the measurement substrate 5 are omitted from the description.

[0198] After the temperature of the heating plate 54 is measured, and with the temperature measurement wafer 1 placed on the heating plate 54, the transmitting unit 8 transmits the temperature data of the heating plate 54 to the receiving unit 46 (step S4).

[0199] When the orientation Ph of the measurement substrate 5 is adjusted to the direction shown in Figure 21(b), when the temperature measurement wafer 1 is placed on the heating plate 54 of the heat treatment unit 43A, the measurement substrate 5 of the temperature measurement wafer 1 will be facing the receiving unit 46. Note that "the measurement substrate 5 is facing the receiving unit 46" means "the orientation of the temperature measurement wafer 1 around the z-axis is determined so that the distance between the measurement substrate 5 and the receiving unit 46 is minimized." In other words, as shown in Figure 22, when the temperature measurement wafer 1 is placed on the heating plate 54 of the heat treatment unit 43A, the distance T1 between the measurement substrate 5 and the receiving unit 46 is minimized.

[0200] By placing the temperature measuring wafer 1 on the heating plate 54 so that the measurement board 5 faces the receiving unit 46, the temperature data transmitted from the transmitting unit 8 of the temperature measuring wafer 1 is transmitted to the receiving unit 46 of the substrate processing device 30 with greater accuracy. In other words, by shortening the distance between the measurement board 5 and the receiving unit 46, the accuracy of wireless communication between the temperature measuring wafer 1 and the substrate processing device 30 can be improved.

[0201] When temperature data is transmitted from the transmitting unit 8 to the receiving unit 46, the substrate processing device 30 adjusts the temperature of the heating plate 54 based on the acquired temperature data (step S5). In parallel with steps S3 to S5, the power generation module 13 of the power generation substrate 9 generates electricity using the heat of the heating plate 54 (steps S6 and S7). In other words, the power stored in the secondary battery 21 decreases as power is consumed in the steps up to step S5, while the power EL generated by the power generation module 13 in steps S6 and S7 charges the secondary battery 21.

[0202] Subsequently, steps S2 to S7 are repeated for each of the five heat treatment units 43A arranged in parallel in the z direction. If the temperature of the battery substrate 7 or the like exceeds the operating threshold F1, the temperature measurement wafer 1 is cooled and a process to notify that the temperature has risen is performed as appropriate (steps S8 and S9).

[0203] Next, as a second example, we will describe the case where steps S2 to S7 have been completed for five heat treatment units 43A arranged in parallel in the z direction. Once steps S2 to S7 have been completed for the five heat treatment units 43A arranged in parallel in the z direction, it is then necessary to perform steps S2 to S7 on the heat treatment unit 43B located in the center in the x direction.

[0204] However, when the temperature measurement wafer 1 is placed on the heating plate 54 of the heat treatment unit 43B while the orientation Ph of the measurement substrate 5 is maintained in the direction shown in Figure 21(b), the positional relationship between the measurement substrate 5 and the receiving unit 46 in a plan view is as shown in Figure 23. In this case, the measurement substrate 5 is not facing the receiving unit 46, so the distance Tf between the measurement substrate 5 and the receiving unit 46 is large. Therefore, there is a concern that the accuracy of wireless communication from the transmitting unit 8 of the measurement substrate 5 to the receiving unit 46 will decrease.

[0205] Furthermore, since the measurement board 5 is not facing the receiving unit 46 (not opposite it), there may be a temperature sensor 3 or other sensor located on the temperature measurement wafer 1 between the measurement board 5 and the receiving unit 46. As a result, it is possible that the temperature sensor 3 or other sensor may interfere with the wireless communication between the measurement board 5 and the receiving unit 46. From the viewpoint of further improving the accuracy of wireless communication from the measurement board 5 to the receiving unit 46, when measuring the heating plate 54 of the heat treatment unit 43B, it is desirable that the positional relationship between the measurement board 5 and the receiving unit 46 in a plan view is as shown in Figure 24.

[0206] As shown in Figure 24, when the temperature measurement wafer 1 is placed on the heating plate 54 of the heat treatment unit 43B, the measurement substrate 5 is positioned towards the front. Therefore, the distance T2 between the measurement substrate 5 and the receiving unit 46 is minimized, improving the accuracy of wireless communication. Thus, when moving to the heat treatment units 43, which are arranged in different rows in the x-direction, to measure the temperature of the heating plate 54, it is preferable to rotate the temperature measurement wafer 1 around the z-axis to change the orientation of the measurement substrate 5.

[0207] Therefore, when the measurement target is changed from heat treatment unit 43A to heat treatment unit 43B, it is necessary to change the orientation Ph of the measurement substrate 5 on the temperature measurement wafer 1, so the selection of step Q1 becomes "Yes". For this reason, after the processes up to step S7 are completed in the last heat treatment unit 43A, step S10 is performed before the process of step S2 is performed for the heat treatment unit 43B. That is, the temperature measurement wafer 1 is transported from heat treatment unit 43B to the holding and rotating unit 76, and the temperature measurement wafer 1 is rotated around the vertical axis AX3 (z-axis).

[0208] When the temperature measurement wafer 1's next target for temperature measurement is the heating plate 54 of the heat treatment unit 43B, the control unit 85 controls the rotation drive of the holding and rotating unit 76, thereby adjusting the orientation Ph of the measurement substrate 5 in plan view from the initial state shown in Figure 21(b) to the state shown in Figure 21(c). When the orientation Ph of the measurement substrate 5 is adjusted to the direction shown in Figure 21(c), the measurement substrate 5 of the temperature measurement wafer 1 will face the receiving unit 46 when the temperature measurement wafer 1 is placed on the heating plate 54 of the heat treatment unit 43B.

[0209] Once step S10 is completed and the orientation Ph of the measurement substrate 5 is adjusted to the direction shown in Figure 21(c), steps S2 to S7 are started. Since the orientation Ph of the measurement substrate 5 is adjusted to the direction shown in Figure 21(c), when the temperature measurement wafer 1 is placed on the heat treatment unit 43B, the orientation Ph of the measurement substrate 5 will be as shown in Figure 24. In other words, the distance T2 between the measurement substrate 5 and the receiving unit 46 will be the shortest, thus improving the accuracy of wireless communication.

[0210] After steps S2 to S7 are completed for the heating plate 54 of the heat treatment unit 43B, steps S2 to S7 are repeated for the other four heat treatment units 43B arranged in parallel in the z direction. For each of the five heat treatment units 43B, the optimal orientation of the measurement substrate 5 is the same when wireless communication is performed from the transmitting unit 8 to the receiving unit 46 on the heating plate 54. Therefore, there is no need to change the orientation of the temperature measurement wafer 1 while repeating steps S2 to S7 for the heating plates 54 of the five heat treatment units 43B.

[0211] However, once steps S2 to S7 are completed for the five heat treatment units 43B, the next step is to perform operations such as temperature measurement on the heating plate 54 of the heat treatment unit 43C. The positional relationship between the heat treatment unit 43B and the receiving unit 46 in a plan view is different from the positional relationship between the heat treatment unit 43C and the receiving unit 46. In other words, the orientation of the measurement board 5 suitable for wireless communication on the heating plate 54 of the heat treatment unit 43B is different from the orientation of the measurement board 5 suitable for wireless communication on the heating plate 54 of the heat treatment unit 43C.

[0212] Therefore, after performing steps S2 to S7 for the heat treatment unit 43B, it is preferable to perform step S10 to adjust the orientation of the measurement substrate 5 to a direction suitable for the heat treatment unit 43C before performing steps S2 to S7 for the heat treatment unit 43C.

[0213] In other words, after performing steps S2 to S7 for all heat treatment units 43B, the temperature measurement wafer 1 is transported from the heat treatment unit 43B to the holding and rotating unit 76. With the temperature measurement wafer 1 held in the holding and rotating unit 76 of the standby unit 45, the control unit 85 rotates the holding and rotating unit 76 around its z-axis (step S10). By rotating the holding and rotating unit 76 at an appropriate angle, the orientation Ph of the measurement substrate 5 on the temperature measurement wafer 1 is adjusted to a direction suitable for the heat treatment unit 43C.

[0214] After the process in step S10 is completed, the process returns to step S2. That is, the process of transporting the temperature measurement wafer 1 from the holding and rotating section 76 to the heat treatment unit 43C is started. The substrate transport mechanism TR3 holds the temperature measurement wafer 1 and transports it to the loading / unloading port 62 of the heat treatment unit 43C. The temperature measurement wafer 1 is loaded into the heat treatment unit 43C via the loading / unloading port 62 and placed on the heating plate 54 of the heat treatment unit 43C (step S2).

[0215] Figure 25 shows a temperature measuring wafer 1, with the orientation of the measurement substrate 5 adjusted to a direction suitable for the heat treatment unit 43C, placed on the heating plate 54 of the heat treatment unit 43C. In this case, the distance T3 from the measurement substrate 5 to the receiving unit 46 is minimized.

[0216] After the process in step S2 is completed by placing the temperature measurement wafer 1 on the heating plate 54 of the heat treatment unit 43C, the temperature of the heating plate 54 of the heat treatment unit 43C is measured (step S3). The temperature data of the heating plate 54 is transmitted wirelessly from the transmitting unit 8 of the temperature measurement wafer 1 to the receiving unit 46 of the substrate processing apparatus 30, and then sent to the control unit 85 (step S4). The control unit 85 adjusts the temperature of the heating plate 54 of the heat treatment unit 43C based on the received temperature data (step S5). Steps S6 to S7 are performed in parallel with steps S3 to S5.

[0217] Thus, the substrate processing unit 100 according to Example 2 is configured so that when changing the orientation of the measurement substrate 5 on the temperature measuring wafer 1, the orientation Ph of the measurement substrate 5 can be appropriately adjusted by performing the process in step S10.

[0218] The substrate processing apparatus 30A according to Embodiment 2 includes a holding and rotating part 76 that can rotate around an axis in the z direction. The holding and rotating part 76 can change the orientation of the temperature measuring wafer 1 around the z direction by rotating while holding the wafer 1. That is, by rotating around the z direction, the holding and rotating part 76 can change the orientation Ph of the measurement substrate 5 on the temperature measuring wafer 1. The measurement substrate 5, which includes a transmitting unit 8, is arranged on the outer periphery of the temperature measuring wafer 1. When the orientation of the temperature measuring wafer 1 is changed, the orientation of the transmitting unit 8 is changed in the horizontal direction (x direction and y direction) perpendicular to the z direction.

[0219] In other words, in Embodiment 2, by providing a holding and rotating part 76, the orientation of the temperature measuring wafer 1 can be adjusted so that the orientation of the transmitting unit 8 faces the receiving unit 46. That is, even if the substrate processing apparatus 30 is configured in which multiple heating plates 54 are arranged in parallel in the x or y direction, the temperature measuring wafer 1 can be adjusted to the optimal direction on each heating plate 54 so that the orientation of the transmitting unit 8 faces the receiving unit 46. Therefore, regardless of which heating plate 54 the temperature measuring wafer 1 is placed on, wireless communication from the transmitting unit 8 of the temperature measuring wafer 1 to the receiving unit 46 of the substrate processing apparatus 30 can be performed with high accuracy. [Examples]

[0220] Next, Embodiment 3 of the present invention will be described with reference to the drawings. Components that overlap with those in Embodiment 1 are denoted by the same reference numerals, and detailed descriptions are omitted. The substrate processing system 100B according to Embodiment 3 consists of a temperature measurement wafer 1B and a substrate processing apparatus 30B. Figure 26 is a functional block diagram of the substrate processing system 100B according to Embodiment 3.

[0221] The temperature measuring wafer 1B according to Example 3 differs from the temperature measuring wafer 1 according to Example 1 in that it is equipped with a memory 113. Furthermore, the substrate processing apparatus 30B according to Example 3 differs from the substrate processing apparatus 30 according to Example 1 in that it is equipped with a base station 115 and a charging unit 117. Figure 27 is a longitudinal cross-sectional view of the base station 115 according to Example 3. Figure 28 is a longitudinal cross-sectional view showing the substrate processing apparatus 30B according to Example 3.

[0222] The memory 113 is, for example, located on the measurement board 5. The memory 113 stores the temperature data of the heating plate 54 acquired by the digital conversion of the A / D converter 6. The transmitting unit 8B of the temperature measurement wafer 1B is configured to read the temperature data stored in the memory 113 and transmit it to the receiving unit 46B when the temperature measurement wafer 1B is transported to the base station 115.

[0223] As shown in Figure 27, the base station 115 is equipped with a mounting table 119. The mounting table 119 is configured to hold a temperature measurement wafer 1B. The mounting table 119 is located inside the casing 121. The casing 121 is provided with an inlet / outlet 123. The substrate transport mechanism TR3 inserts at least one of two hands 47A and 47B through the inlet / outlet 123 to load and unload the temperature measurement wafer 1B.

[0224] The mounting table 119 is equipped with an interface (not shown). The receiving unit 46B of the substrate processing apparatus 30B according to Embodiment 3 is electrically connected to the interface of the mounting table 119. By placing the temperature measuring wafer 1B on the mounting table 119, the transmitting unit 8B of the temperature measuring wafer 1B is connected to the interface of the mounting table 119. With the transmitting unit 8B of the temperature measuring wafer 1B connected to the interface of the mounting table 119, the transmitting unit 8B can read the data stored in the memory 113 and transmit it to the receiving unit 46B.

[0225] Thus, the transmitting unit 8B in Embodiment 3 differs from the transmitting unit 8 in Embodiment 1 in its method of transmitting the temperature data of the heating plate 54. Specifically, the transmitting unit 8 in Embodiment 1 transmits data by sequentially sending the temperature data of the heating plate 54 to the receiving unit 46 while the temperature measurement wafer 1 is placed on the heating plate 54. On the other hand, the transmitting unit 8B in Embodiment 3 temporarily stores the temperature data of the heating plate 54 in the memory 113, and reads the temperature data from the memory 113 and transmits it to the receiving unit 46B when the temperature measurement wafer 1B has been transported from the heating plate 54 to the base station 115. In other words, the transmitting unit 8B in Embodiment 3 transmits the temperature data to the receiving unit 46B using a memory-stored method. The base station 115 corresponds to the standby unit in the present invention.

[0226] In the substrate processing apparatus 30B according to Embodiment 3, as shown in Figure 28, the base station 115 is located in the heat treatment block section 97 of the processing block 32. Figure 28 shows the arrangement of the heat treatment unit 43 and the base station 115 in the processing block 32. In Embodiment 3, as in Embodiment 1, the heat treatment block section 97 is provided with a space for arranging the heat treatment unit 43 in a 3x5 grid. In Embodiment 3, the base station 115 is located in one of the spaces provided in the 3x5 grid.

[0227] In Figure 28, as an example, the base station 115 is positioned in the bottom row of the row in which the heat treatment units 43C are located. That is, in Embodiment 3, the heat treatment block section 97A and the heat treatment block section 97B each consist of five heat treatment units 43A, five heat treatment units 43B, and four heat treatment units 43C. Thus, in the substrate processing apparatus 30B according to Embodiment 3, the standby unit 45 is positioned in the empty space of the heat treatment block 97. Note that the position in which the base station 115 is positioned in the substrate processing apparatus 30B may be changed as appropriate.

[0228] The charging unit 117 supplies power to the temperature measuring wafer 1B, which is waiting at the base station 115. The charging unit 117 wirelessly supplies power to the battery board 7 of the temperature measuring wafer 1. In other words, the charging unit 117 and the battery board 7 enable charging of the secondary battery 21 while the temperature measuring wafer 1B is waiting at the base station 115. The charging unit 117 is embedded in the mounting base 119 of the base station 115, for example. The location where the charging unit 117 is placed is not limited to this, and it may be placed outside the base station 115. A disc-shaped wireless charger or the like can be used as the charging unit 123. As the wireless power supply method, an electromagnetic induction method, an electric field coupling method, or an electromagnetic wave method may be used as appropriate.

[0229] The charging efficiency when charging the secondary battery 21 using the charging unit 117 is configured to be higher than the charging efficiency when charging the secondary battery 21 using the power generated by the power generation module 13. In other words, the charging unit 117 is configured to be able to supply more power to the secondary battery 21 more quickly than the power generation module 13.

[0230] <Temperature measurement method in Example 3> Here, we will describe the process of measuring the temperature using the temperature measuring wafer 1B in the substrate processing unit 100B according to Example 3. Figure 29 is a flowchart illustrating the series of steps for measuring the temperature using the temperature measuring wafer 1B.

[0231] Step S101 (Loading wafers into the substrate processing device) When the temperature measurement process begins, step S101 is executed to transport the temperature measurement wafer 1B into the substrate processing apparatus 30. Step S101 in Example 3 is the same as step S1 in Example 1. That is, the temperature measurement wafer 1B is transported from outside the substrate processing apparatus 30B into the indexer block 31 using the substrate transport mechanism TR1 or the substrate transport mechanism TR2.

[0232] Step S102 (Transport the wafer to the heat treatment unit) When the temperature measurement wafer 1B is loaded into the indexer block 31, the process of step S102 is executed to transport the temperature measurement wafer 1B to the heat treatment unit 43. The process of step S102 in Example 3 is the same as the process of step S2 in Example 1. That is, the substrate transport mechanism TR3 is used to transport the temperature measurement wafer 1B to the heat treatment unit 43 where the heating plate 54 to be measured for temperature is located.

[0233] Step S103 (Measure the temperature of the heating plate) After transporting the temperature measurement wafer 1B to the heat treatment unit 43, the process of step S103 is performed to measure the temperature of the heating plate 54. The process of step S103 in Example 3 is the same as the process of step S3 in Example 1. That is, the temperature measurement wafer 1B is placed on the heating plate 54 using the substrate transport mechanism TR3 and the local transport mechanism 59 (see Figures 13 and 14). After the temperature measurement wafer 1B is placed on the heating plate 54, the temperature of the heating plate 54 is measured by the temperature sensor 3. The signals from each of the multiple temperature sensors 3 are digitally converted by the A / D converter 6 to obtain temperature data.

[0234] Step S104 (Store temperature data) In Example 3, once temperature data of the heating plate 54 is acquired by temperature measurement, the process in step S104 is executed to store the temperature data. That is, the temperature data acquired by the digital conversion of the A / D converter 6 is transmitted to the memory 113 located on the temperature measuring wafer 1B. The memory 113 stores the temperature data of the heating plate 54. In other words, while the temperature measuring wafer 1B is placed on the heating plate 54, the temperature data of the heating plate 54 is not transmitted to the outside of the temperature measuring wafer 1B.

[0235] By performing the various processes up to step S104, power is consumed in each part of the temperature measuring wafer 1B. Specifically, by performing operations such as measuring the temperature of the heating plate 54 and transmitting and storing the temperature data of the heating plate 54 inside the temperature measuring wafer 1B, the power stored in the secondary battery 21 of the battery substrate 7 is reduced.

[0236] By the steps up to step S104, the process of measuring and storing the temperature of the heating plate 54 for one heat treatment unit 43 is completed. While the temperature measurement wafer 1 is placed on the heating plate 54, the process of generating electricity in the power generation substrate 9 (step S105) and the process of supplying the power generated in the power generation substrate 9 to the battery substrate 7 (step S106) are performed. In other words, while steps S103 to S104 are being executed, steps S105 and S106 are performed in parallel.

[0237] Step S105 (Generating electricity using the heat from the heating plate) When the temperature measurement wafer 1 is placed on the heating plate 54, the process of step S105 begins. The process of step S105 in Example 3 is the same as the process of step S6 in Example 1. That is, power generation is performed in the power generation module 13 provided on the power generation substrate 9 using the heat of the heating plate 54. Power EL is generated in the power generation module 13 by power generation using the heat Ht of the heating plate 54 (see Figures 16(a) and 16(b)).

[0238] Step S106 (Supplying the generated electricity) When the power generation module 13 generates power EL using the heat Ht of the heating plate 54, the process of step S106 begins. The process of step S106 in Embodiment 3 is the same as the process of step S7 in Embodiment 1. That is, the power generation board 9 uses a power transmission unit (not shown) to supply the power EL generated in the power generation module 13 from the power generation board 9 to the secondary battery 21 of the battery board 7 (see Figure 17). The secondary battery 21 supplies the stored power to the transmission unit 8, etc. That is, the secondary battery 21 supplies the power EL generated in the power generation module 13 to the transmission unit 8, etc.

[0239] In this way, the stored power of the secondary battery 21 is consumed by the process up to step S104, while in steps S105 to S106, thermoelectric power generation is performed on the power generation substrate 9, and the power EL generated by this thermoelectric power generation is used to charge the secondary battery 21. In other words, the temperature measuring wafer 1B according to Embodiment 3 has a configuration in which, while placed on the heating plate 54, the stored power of the secondary battery 21 consumed in the transmitting unit 8B and the like is supplemented by the power EL generated on the power generation substrate 9. Therefore, the rate at which the charge level of the secondary battery 21 decreases can be slowed down in the process up to step S104.

[0240] In Example 3, the amount of power EL generated by thermoelectric power generation in the power generation substrate 9 is assumed to be less than in Example 1. That is, in Example 3, a portion of the power consumption of the temperature measuring wafer 1B is supplemented by the power EL generated by thermoelectric power generation in the power generation substrate 9. In this case, the secondary battery 21 of the temperature measuring wafer 1B will deplete its charge at a slower rate compared to the secondary battery of a conventional temperature measuring wafer.

[0241] After the process up to step S106 is completed, the subsequent process branches depending on the selection of steps R1 to R3 shown in Figure 29. In other words, the subsequent process branches depending on the state of the temperature measurement wafer 1B.

[0242] In step R1, the selection is branched based on the temperatures of the battery substrate 7 and the power generation substrate 9 on the temperature measurement wafer 1B. Step R1 in Example 3 is the same as step Q1 in Example 1. That is, the temperature data of the battery substrate 7 and the temperature data of the power generation substrate 9 are compared with the operating threshold F1. If the temperature of both the battery substrate 7 and the power generation substrate 9 is less than the operating threshold F1, the selection in step Q1 is "No". On the other hand, if at least one of the temperatures of the battery substrate 7 and the power generation substrate 9 is greater than or equal to the operating threshold F1, the selection in step Q1 is "Yes".

[0243] In step R2, the selection is branched based on the remaining power of the secondary battery 21 on the temperature measurement wafer 1B. For example, the selection in step R2 can be made by comparing the data on the remaining power of the secondary battery 21 (charge rate data) with a predetermined value F2 stored in the memory unit 89.

[0244] If the remaining power of the secondary battery 21 is greater than a predetermined value F2, it is determined that it is possible to move to the next heat treatment unit 43 and continue the operation of measuring the temperature of the heating plate 54. In this case, the selection in step R2 is "No". On the other hand, if the remaining power of the secondary battery 21 is less than or equal to the predetermined value F2, it is determined that if the operation of moving to the next heat treatment unit 43 and continuing the operation of measuring the temperature of the heating plate 54 may stop due to insufficient power from the secondary battery 21, making temperature measurement impossible. In this case, the selection in step R2 is "Yes".

[0245] In step R3, the selection branches depending on whether temperature measurements have been taken using the temperature measurement wafer 1B for all of the heat treatment units 43 whose temperatures are scheduled to be measured. In other words, the selection branches depending on whether the temperature data of the heating plate 54 has been stored in the memory 113 for all of the heat treatment units 43 whose temperatures are scheduled to be measured. If there are any heat treatment units 43 for which the temperature data of the heating plate 54 has not been stored in the memory 113, the selection in step R3 is "No". On the other hand, if the temperature data of the heating plate 54 has been stored in the memory 113 for all of the heat treatment units 43, the selection in step R3 is "Yes".

[0246] The operation of the temperature measurement wafer 1B, which is performed according to the selection of steps R1, R2, and R3, will be described below.

[0247] (E) When performing temperature measurements on the following heat treatment unit First, let's explain the case where all selections in steps R1 to R3 are "No". If the selections in steps R1 and R2 are "No", the temperature of the battery substrate 7 and the charging substrate 9 are low, and the charge level of the secondary battery 21 is high. In this case, it is determined that it is possible to continue operating the temperature measurement wafer 1B. If the selection in step R3 is "No", it is determined that there is a heat treatment unit 43 that needs to acquire temperature data of the heating plate 54.

[0248] Therefore, if the selections in steps R1 to R3 are all "No", the process returns to step S102 and steps S102 to S106 are repeated. That is, after the process up to step S106 is completed and the temperature data of the first heating plate 54 installed in the first heat treatment unit 43 is stored in the memory 113, the process returns to step S102 and the temperature measurement wafer 1B is transported to the second heat treatment unit 43.

[0249] Then, a temperature measuring wafer 1B is placed on the second heating plate 54 located in the second heat treatment unit 43, and the temperature of the second heating plate 54 is measured (step S103). The temperature data of the second heating plate 54 obtained by the measurement is stored in the memory 113 (step S104). When the temperature measuring wafer 1B is placed on the second heating plate 54, power generation using the heat of the heating plate 54 is started (step S105), and the power EL generated by the power generation using heat is stored in the secondary battery 21 (step S106).

[0250] After the process up to step S106 is completed for the second heat treatment unit 43, the process branches again according to the selection of steps R1 to R3. Thereafter, the process from steps S102 to S106 is repeated until the selection of step R3 is "Yes", thereby acquiring the temperature data of each heating plate 54 that is the target of measurement and storing it in memory 113.

[0251] (F) When transmitting stored temperature data to an external location on the wafer. Next, we will explain the case where both step R1 and step R2 are selected as "No," while step R3 is selected as "Yes." When both step R1 and step R2 are selected as "No," it is determined that the operation of the temperature measurement wafer 1B can be continued. When step R3 is selected as "Yes," it is determined that temperature data has been stored in memory 113 for all of the heating plates 54 that were predetermined as the measurement targets.

[0252] When the temperature data for all heating plates 54 is stored in the memory 113, each of the temperature data is transmitted to the control unit 85 of the substrate processing device 30B. The control unit 85 then adjusts the temperature of the heating plates 54 based on the temperature data. In other words, if the selection in step R3 is "Yes", steps S107 to S109 are performed. Steps S107 to S109 will be described below.

[0253] Step S107 (Transport the wafer to the base station) Once the temperature data for all heating plates 54 has been stored in the memory 113, the process of step S107 is started. Specifically, the temperature measurement wafer 1B is transported to the base station 115 with the aim of transmitting the temperature data stored in the memory 113 to the outside of the temperature measurement wafer 1B. Figure 30 shows the state in which the temperature measurement wafer 1B is being transported from the heat treatment unit 43A to the base station 115 in Embodiment 3.

[0254] When step S107 is initiated, the substrate transport mechanism TR3 removes the temperature measurement wafer 1B from the heat treatment unit 43 (see symbol PE). The operation of removing the temperature measurement wafer 1B from the heat treatment unit 43 is performed in the reverse order of the description in Figures 13(a) to 13(d) and Figures 14(a) to 14(b).

[0255] After the temperature measurement wafer 1B is removed from the heat treatment unit 43, the substrate transport mechanism TR3 moves to the base station 115 while holding the temperature measurement wafer 1B. The substrate transport mechanism TR3 then places the temperature measurement wafer 1B on the mounting table 119 of the base station 115.

[0256] By placing the temperature measuring wafer 1B on the mounting base 119, the transmitting unit 8B of the temperature measuring wafer 1B is connected to the interface of the mounting base 119. This connection allows the transmitting unit 8B to read data stored in the memory 113 and transmit it to the receiving unit 46B. In other words, in Embodiment 3, by placing the temperature measuring wafer 1B on the mounting base 119, the data stored in the memory 113 can be transmitted to the outside of the temperature measuring wafer 1B.

[0257] Step S108 (Transmission of temperature data) After placing the wafer 1B for temperature measurement on the stage 119 of the base station 115, the process of step S108 is started. That is, in the wafer 1B for temperature measurement, the transmission unit 8B reads out all the temperature data of the heating plate 54 stored in the memory 113. Then, the transmission unit 8B transmits each temperature data of the heating plate 54 to the receiving unit 46B of the substrate processing apparatus 30B. The method of transmitting the temperature data from the transmission unit 8B to the receiving unit 46B may be a wireless method or a wired method.

[0258] Step S109 (Adjusting the temperature of the heating plate) When the temperature data is transmitted from the transmission unit 8B of the wafer 1B for temperature measurement to the receiving unit 46B of the substrate processing apparatus 30B, the process of step S109 is started. That is, the substrate processing apparatus 30B adjusts the temperature of the heating plate 54 based on the acquired temperature data.

[0259] The temperature data received by the receiving unit 46B is transmitted to the control unit 85 of the substrate processing apparatus 30B. The control unit 85 compares the actual temperature data of the heating plate 54 obtained by measuring the wafer 1B for temperature measurement with the information on the ideal temperature F3 stored in the storage unit 89. Then, the temperature control unit 86 possessed by the control unit 85 controls the operation of the heater disposed on the heating plate 54 so that the temperature of the heating plate 54 becomes the ideal temperature F3. By controlling the operation of the heater in real time, the temperature of the heating plate 54 is adjusted. By adjusting the temperature of the heating plate 54, the process of step S109 is completed.

[0260] As described above, in Examples 1 and 2, with the temperature measurement wafer 1 placed on the heating plate 54, the steps of measuring the temperature of the heating plate 54, transmitting the temperature data of the heating plate 54 to the outside of the temperature measurement wafer 1, and adjusting the temperature of the heating plate 54 based on the temperature data are performed (steps S3 to S5). On the other hand, in Example 3, with the temperature measurement wafer 1B placed on the heating plate 54 of the heat treatment unit 43, the steps of measuring the temperature of the heating plate 54 and temporarily storing the temperature data of the heating plate 54 are performed (steps S103 to S104). Then, with the temperature measurement wafer 1B transported to the mounting table 119 of the base station 115, the steps of transmitting the temperature data of the heating plate 54 to the outside of the temperature measurement wafer 1B, and adjusting the temperature of the heating plate 54 based on the temperature data are performed (steps S107 to S109).

[0261] After steps S107 to S109 are completed, the subsequent process branches depending on the selection of step RF shown in Figure 29.

[0262] Step RF branches the selection depending on whether or not to measure the temperature of the heated plate 54 again after its temperature has been adjusted. If it is not necessary to measure the temperature of the heated plate 54 again, the selection in Step RF is "No". For example, if the temperature data obtained for each of the heated plates 54 accurately matches the ideal temperature F3, the selection in Step RF is "No". On the other hand, if the control unit 85 determines that it is necessary to measure the temperature of any of the heated plates 54 again, the selection in Step RF is "Yes".

[0263] If step RF is selected as "Yes", the process returns to step S102 and steps S102 to S109 are repeated. That is, the substrate transport mechanism TR3 unloads the temperature measurement wafer 1B from the base station 115. The substrate transport mechanism TR3 then transports the temperature measurement wafer 1B to the heat treatment unit 43 where the heating plate 54, whose temperature is to be measured again, is located (step S102). The temperature of the heating plate 54, whose temperature has been adjusted, is measured and the temperature data is stored in the memory 113 (steps S103, S104). In parallel with the process of measuring the temperature and storing the temperature data, power generation using the heat of the heating plate 54 and charging of the secondary battery 21 are performed (steps S105, S106). After the temperature data for the heating plate 54 after temperature adjustment is stored in the memory 113, the temperature measurement wafer 1B is transported back to the base station 115, the temperature data is transmitted, and the temperature of the heating plate 54 is adjusted again (steps S107 to S109).

[0264] If step RF is selected as "No", the control unit 85 controls the substrate transport mechanisms TR1 to TR3 to transport the temperature measuring wafer 1 to the outside of the substrate processing apparatus 30. Specifically, the substrate transport mechanism TR3 holds the temperature measuring wafer 1 and transports it from the holding block 32 to the substrate mounting section PS1 of the indexer block 31. The substrate transport mechanism TR1 holds the temperature measuring wafer 1 placed on the substrate mounting section PS1 and transports it to the outside of the indexer block 31 through the opening 91. Then the substrate transport mechanism TR1 loads the temperature measuring wafer 1 into the carrier C. The operator retrieves the temperature measuring wafer 1 loaded into the carrier C. The series of operations is completed with the above steps.

[0265] (G) When the temperature of the wafer used for temperature measurement rises Next, we will describe the case where the selection in step R2 is "Yes". If the selection in step R2 is "Yes", steps S110 and S111 are performed. Step S110 in Example 3 is the same as step S8 in Example 1. Step S111 in Example 3 is the same as step S9 in Example 1. That is, if the selection in step R2 is "Yes", the temperature of the battery substrate 7 or the power generation substrate 9 has risen to above the operating threshold F1. Therefore, the control unit 85 controls various components to cool the temperature measuring wafer 1B (step S110), and the notification unit 91 notifies that the temperature of the battery substrate 7 or the power generation substrate 9 has risen (step S111).

[0266] (H) When charging a wafer used for temperature measurement Next, we will explain the case where the selection in step R2 is "Yes". If the power consumed from the secondary battery 21 by the processes up to step S104 exceeds the power EL charged to the secondary battery 21 by steps S105 to S106, the charge level of the secondary battery 21 will gradually decrease by continuing to operate the temperature measuring wafer 1B. Therefore, although the rate of decrease in the charge level of the secondary battery 21 is slowed by the power generation module 13, the power stored in the secondary battery 21 may fall below a predetermined value F2 by measuring the temperature of a large number of heating plates 54.

[0267] If the power stored in the secondary battery 21 is below a predetermined value F2, in order to prevent the temperature measuring wafer 1 from becoming inoperable due to the depletion of the power stored in the secondary battery 21, a charging operation is required that rapidly supplies power to the secondary battery 21 with a higher charging efficiency than the charging in step S106. For this reason, in Embodiment 3, the base station 115 is configured to enable a charging operation for the temperature measuring wafer 1B. Specifically, steps S112 and S113 are performed as a trigger when the power remaining in the secondary battery 21 is below a predetermined value F2, and the temperature measuring wafer 1B is charged from outside the wafer 1B.

[0268] The following describes the steps S112 and S113, which are performed when the selection in step R2 is "Yes".

[0269] Step S112 (Transport the wafer to the base station) If the selection in step R2 is "Yes", the process in step S112 is initiated. Specifically, the temperature measurement wafer 1B is transported to the base station 115 with the aim of charging the secondary battery 21 with a higher charging efficiency than the power generation module 13.

[0270] Step S112 is the same as step S107. That is, the substrate transport mechanism TR3 moves to the base station 115 while holding the temperature measurement wafer 1B, and places the temperature measurement wafer 1B on the mounting table 119 of the base station 115. By placing the temperature measurement wafer 1B on the mounting table 119, charging by the charging unit 117 becomes possible.

[0271] Step S113 (Supplying power to the wafer) After transporting the temperature measurement wafer 1B to the base station 115 and holding it on the mounting table 119, the temperature measurement wafer 1B is charged. That is, with the temperature measurement wafer 1B mounted and held on the mounting table 119, the control unit 85 controls the charging unit 117 to supply power from the charging unit 117 to the battery board 7 (see Figure 26).

[0272] In Example 3, as shown in Figure 28, the charging unit 117 is embedded in the mounting base 119. Therefore, when the temperature measuring wafer 1B is placed on the mounting base 119, the charging unit 117 is in close proximity to the temperature measuring wafer 1B. As a result, power can be supplied more efficiently from the charging unit 117 to the battery substrate 7 of the temperature measuring wafer 1B. In this way, by operating the charging unit 117 with the temperature measuring wafer 1B placed on the mounting base 119, power is supplied to the secondary battery 21 of the temperature measuring wafer 1B, and charging is completed. Once the charging of the temperature measuring wafer 1B is complete, the process in step S113 is completed.

[0273] After the completion of step S113, the operation of steps S102 to S106 on the heating plate 54 of the heat treatment unit 43 is resumed. Specifically, the control unit 85 controls the substrate transport mechanism TR3, etc., and the substrate transport mechanism TR3 transports the temperature measurement wafer 1B from the base station 115 to the heat treatment unit 43 (step S102). With the temperature measurement wafer 1B placed on the heating plate 54 of the heat treatment unit 43, the temperature of the heating plate 54 is measured and the temperature data is stored (steps S103 to S104). Also, by placing the temperature measurement wafer 1B on the heating plate 54, the power generation module 13 generates electricity using the heat of the heating plate 54, and charges the secondary battery 21 with the generated power EL (steps S105 to S106).

[0274] As described above, the substrate processing unit 100B according to Embodiment 3 is configured to efficiently charge the temperature measuring wafer 1B from outside the wafer by performing steps S112 and S113 when the remaining power of the secondary battery 21 in the temperature measuring wafer 1B falls below a predetermined value F2. In Embodiment 3, by arranging the charging unit 117 in the base station 115, it becomes possible to charge the temperature measuring wafer 1B without removing the temperature measuring wafer 1B from the substrate processing apparatus 30B. Therefore, the operating efficiency of the temperature measuring wafer 1B can be further improved.

[0275] As shown in Example 3, even in the case of a temperature measuring wafer 1B equipped with a memory 113 and employing a method of transmitting temperature data of the heating plate 54 to the outside at the base station 115, the advantageous effects of the present invention can be obtained by arranging the power generation substrate 9 on the wafer body 2. The operating efficiency of the temperature measuring wafer 1B can be improved. That is, while the temperature measuring wafer 1B is placed on the heating plate 54, the power generation module 13 of the power generation substrate 9 can generate electric EL by utilizing the heat of the heating plate 54.

[0276] The power EL generated by the power generation module 13 is used to charge the secondary battery 21. The secondary battery 21 supplies the power EL generated by the power generation module 13 to the transmitter 8B and other components. By placing the temperature measurement wafer 1B on the heating plate 54, the secondary battery 21 can be charged, thus slowing down the rate at which the charge level of the secondary battery 21 decreases. As a result, the frequency of transporting the temperature measurement wafer 1B to the base station 115 for the purpose of charging the secondary battery 21 can be reduced, thus shortening the time during which the temperature of the heating plate 54 cannot be measured. Therefore, the operating efficiency of the temperature measurement wafer 1B can be improved.

[0277] In Example 3, if the power generation efficiency of the power generation module 13 is sufficiently high, the entire power consumption of the temperature measurement wafer 1B can be covered by the power EL generated by the power generation module 13. In this case, it becomes unnecessary to transport the temperature measurement wafer 1B to the base station 115 for the purpose of charging the secondary battery 21. Therefore, the operating efficiency of the temperature measurement wafer 1B can be further improved.

[0278] This invention is not limited to the above embodiments and can be modified and implemented as follows.

[0279] (1) In each of the above-described embodiments, the processing block 32 is composed of two processing layers 32A and 32B stacked in the z direction, but is not limited thereto. That is, the processing block 32 may have one processing layer, or may have three or more processing layers. Similarly, in Embodiment 3, the processing block 98 may be configured to have one or three or more processing layers.

[0280] (2) In each of the above-described embodiments, the substrate processing apparatuses 30, 30A, and 30B may be configured to include a heat treatment unit 43, and the configurations of other processing blocks may be appropriately changed. As an example, in the substrate processing apparatus 30 according to Embodiment 1, a processing block that performs a development process may be disposed instead of the processing block 32 that performs a coating process. That is, the substrate processing apparatus 30 may be configured to include an index block 31 and a processing block that performs a development process. Further, in the substrate processing apparatus 30, a processing block that performs a development process, an exposure apparatus that performs an exposure process, etc. may be appropriately added.

[0281] (3) In Embodiment 3 described above, the number and positions of the base stations 115 disposed in the substrate processing apparatus 30B may be appropriately changed. As an example, the base stations 115 are not limited to being arranged one by one in each of the processing layers 32A and 32B, and may be arranged in one of the processing layers 32A and 32B. Further, each of the processing layers 32A and 32B may include two or more base stations 115. Also, the base stations 115 are not limited to being arranged in the heat treatment block 97, and may be arranged in the transfer space 42 or the index block 31.

[0282] (4) In the above-described embodiments 1 and 2, the power generation efficiency of the power generation module 13 is high, and the substrate processing apparatus 30 and substrate processing apparatus 30A are shown as examples in which there is no base station 115. However, the substrate processing apparatus 30 and substrate processing apparatus 30A may have a base station 115. For example, if the power consumption of the temperature measurement wafer 1 is greater than the power EL generated by the power generation module 13, it is preferable to place a base station 115 equipped with a charging unit 117 in the substrate processing apparatus 30 or the like to avoid the depletion of the stored power of the secondary battery 21 and the resulting disruption to the operation of the temperature measurement wafer 1. Then, by performing the processes of steps S112 and S113 triggered by the charge rate of the secondary battery 21 falling below a predetermined value F2, a large amount of power can be rapidly charged to the secondary battery 21.

[0283] (5) In the embodiments described above, the power generation module 13 was shown as an example in which it generates power EL by the temperature difference between the heating plate 54 and the atmosphere Am, but it is not limited to this. That is, any method that generates power using the heat of the heating plate 54, which is the object of temperature measurement, may be used for the power generation module 13 other than the method that uses a thermoelectric conversion element that utilizes the temperature difference.

[0284] (6) In each of the embodiments described above, the battery temperature detection unit 11, the substrate temperature detection unit 14, and the notification unit 91 may be omitted. In this case, steps S8 and S9 can be omitted.

[0285] (7) In each of the embodiments described above, the location and number of receiving units 46 that receive temperature data transmitted from the transmitting unit 8 may be changed as appropriate. That is, the receiving units 46 may be located in a place other than the transport space 42. Alternatively, the substrate processing apparatus 30 may not have receiving units 46, and the receiving units 46 may be located outside the substrate processing apparatus 30. In a modified example in which the substrate processing apparatus 30 does not have receiving units 46, the temperature data of the heating plate 54 acquired while it is placed on the heating plate 54 is transmitted wirelessly from the temperature measuring wafer 1 to the outside of the substrate processing apparatus 30. The transmitted temperature data is then received by the receiving unit 46 located outside the substrate processing apparatus 30.

[0286] (8) In the above-described embodiments 1 and 2, if the configuration allows information to be communicated wirelessly from the transmitting unit 8 of the temperature measuring wafer 1 to the outside of the temperature measuring wafer 1, the method of communicating information inside the temperature measuring wafer 1 is not limited to wireless. For example, the temperature sensor 3 and the measurement board 5 may be connected by a communication cable, and temperature data may be transmitted from the temperature sensor 3 to the measurement board 5 via the communication cable. In other words, communication from the temperature sensor 3 to the measurement board 5 may be wired. Similarly, information may be communicated from the battery board 7 to the measurement board 5 by wire, and information may be communicated from the power generation board 9 to the measurement board 5 by wire.

[0287] (9) In each of the embodiments described above, the substrate transport mechanism TR3 is equipped with two hands 47, but it may be equipped with one or more hands 47. Similarly, the substrate transport mechanisms TR1 and TR2 are equipped with two hands 37, but they may be equipped with one or more hands 37.

[0288] (10) In each of the embodiments described above, one end of a gas pipe (not shown) may be connected to the cover 68. In this case, any gas can be supplied into the processing space SP surrounded by the heating plate 54 and the cover 68. Any gas can be, for example, an inert gas (e.g., nitrogen gas) and a processing gas (e.g., HMDS (hexamethyldisilazane)).

[0289] (11) In each of the embodiments described above, the local transport mechanism 59 may be omitted. That is, the wafer 1 for temperature measurement may be transported to the heating plate 54 by using only the substrate transport mechanism TR3. In this modified example, the substrate transport mechanism TR3 transports the wafer 1 for temperature measurement from outside the heat treatment unit 43 to the input / output port 62 of the heat treatment unit 43, and then inserts the hand 47 into the heat treatment unit 43. The hand 47, which is holding the wafer 1 for temperature measurement, then transports the wafer 1 for temperature measurement to the heating plate 54 and places it on it.

[0290] In such modified examples, it is preferable that the hand 47 is equipped with a cooling mechanism. In this case, while the hand 47 holds and transports the temperature measuring wafer 1, the temperature measuring wafer 1 is cooled by the hand 47, which has a built-in cooling mechanism. Therefore, when the hand 47 places the temperature measuring wafer 1 on the heating plate 54, the atmosphere Am of the temperature measuring wafer 1 is cooled by the temperature measuring wafer 1, which is at a lower temperature. As a result, when the hand 47 places the temperature measuring wafer 1 on the heating plate 54, the temperature difference between the heating plate 54 and the atmosphere Am becomes even larger, so that the power EL generated by the power generation module 13 can be increased. In other words, by providing a cooling mechanism in the transport mechanism that transports the temperature measuring wafer 1 to the heating plate 54, the power EL generated by the power generation module 13 can be increased. As a result, the power generation efficiency of the power generation module 13 can be improved.

[0291] (12) In the embodiments described above, the transport arm 65 is shown to be equipped with a cooling mechanism, but the transport arm 65 does not have to have a cooling mechanism. Even if the mechanism for transporting the temperature measuring wafer 1 to the heating plate 54 does not have a cooling mechanism, the temperature of the atmosphere Am is lower than that of the heating plate 54 which is heated to a high temperature. Therefore, the power generation module 13 can generate power EL by utilizing the temperature difference between the heating plate 54 and the atmosphere Am. In a modified example in which the local transport mechanism 59 is omitted and the temperature measuring wafer 1 is transported to the heating plate 54 using only the substrate transport mechanism TR3, the hand 47 does not have to have a cooling mechanism. That is, even if the mechanism for transporting the temperature measuring wafer 1 to the heating plate 54 does not have a cooling mechanism, the power generation module 13 can generate power EL by utilizing the heat of the heating plate 54. [Explanation of Symbols]

[0292] 1 ...Wafer for temperature measurement 2 ... Wafer body 3. Temperature sensor 5 ... Measurement board 6. A / D converter 7 ... Battery board 8 ...Transmitter 9...Power generation board 10... Notch 11 ... Battery temperature detection unit 13 ... Power generation module 14 ... Substrate temperature detection unit 15…Insulation sheet 17… cabinet 19 ... Battery Unit 20 ... base board 21...Secondary battery 23… Insulation sheet 25… Insulation sheet 27... Tape 29... Tape 30 ... Substrate processing equipment 31… Indexer Block 32 ... Processing block 33... Opener 34... Opener 36…Opening 37…Hand 38 ... Reverse drive unit 39 ... Rotary drive unit 41 ... Coating unit 42 ... Transport space 43 ... Heat treatment unit 46 ... Receiving unit 47... Hand 48 ... Reverse drive unit 49 ... Rotary drive unit 51...First movement mechanism 52...Second movement mechanism 53 ... Cooling plate 54 ... Heating plate 55 ...First support pin 56 ...First pin lifting mechanism 57 ...Second support pin 58 ...Second pin lifting mechanism 59 ... Local transport mechanism 60 ... Casing 61...hole 63 ... Lifting member 65 ... Transport arm 66...hole 67 ... Lifting member 68...cover 69... Cover lifting mechanism 71 ... Exhaust port 73 ... Arm drive mechanism 74… Proximity Ball 75…Slit 76 ... Holding and rotating part 77 ... Base part 78 ... Notch detection unit 79... Centering mechanism 85 ... Control Unit 86 ... Temperature control unit 87...Operation unit 88 ... Cooling control unit 89...Storage section 91 ... Hochi Department 97… Heat treatment block 100 ... Circuit board processing system 113 ...memory 115 ... Base station 117 ... Charging unit C... Career W... circuit board TR1~TR3 ... Circuit board transport mechanism PS1~PS2... Circuit board mounting section

Claims

1. A wafer body that can be placed on top of the object to be measured for temperature, Multiple temperature sensors are disposed on the wafer body, A transmitting unit capable of transmitting temperature data detected by the temperature sensor, A power supply unit is disposed in the wafer body and supplies power to the transmission unit, The wafer body is equipped with a power generation unit that generates electricity using the heat of the object whose temperature is being measured, Equipped with, The power supply unit supplies the power generated by the power generation unit using the heat of the temperature-measured object to the transmission unit. A wafer for temperature measurement characterized by the following features.

2. In the temperature measuring wafer according to claim 1, The transmitting unit is configured to wirelessly transmit temperature data detected by the temperature sensor while the wafer body is placed on the object to be measured for temperature. A wafer for temperature measurement characterized by the following features.

3. In the temperature measuring wafer according to claim 1, The power generation unit has a thermoelectric conversion element that generates electricity based on the temperature difference between the temperature object to be measured and the atmosphere of the power generation unit. A wafer for temperature measurement characterized by the following features.

4. In the temperature measuring wafer according to claim 1, The power generation unit is arranged so as to be in contact with the wafer body, The power supply unit is disposed on the wafer body via an insulating member. A wafer for temperature measurement characterized by the following features.

5. In the temperature measuring wafer according to claim 1, The overall thickness of the power supply unit and the wafer body, and the overall thickness of the power generation unit and the wafer body, are both 4 mm or less. A wafer for temperature measurement characterized by the following features.

6. In the temperature measuring wafer according to claim 1, The aforementioned transmitting unit Displaced on the outer periphery of the wafer body A wafer for temperature measurement characterized by the following features.

7. In a substrate processing system comprising a substrate processing apparatus that performs at least heat treatment on a substrate, The substrate processing apparatus is The aforementioned temperature measurement target, comprising a heat treatment unit having a heating plate that performs heat treatment on the mounted substrate, A standby unit comprising a holding section for holding a temperature measuring wafer according to any one of claims 1 to 6, and for keeping the temperature measuring wafer held by the holding section on standby inside the substrate processing apparatus, A transport unit for transporting the temperature measuring wafer between the heat treatment unit and the standby unit, A substrate processing system characterized by comprising the following:

8. In the substrate processing system according to claim 7, A receiving unit is disposed outside the heat treatment unit and receives the temperature data transmitted wirelessly from the transmitting unit, A substrate processing system characterized by comprising the following:

9. In the substrate processing system according to claim 8, A rotation mechanism for rotating the temperature measuring wafer being transported to the standby unit so that the transmitting unit faces the receiving unit when the temperature measuring wafer is mounted on the heating plate, A substrate processing system characterized by comprising the following:

10. In the substrate processing system according to claim 7, The substrate processing apparatus is The system includes a temperature control unit that adjusts the temperature of the heating plate based on the temperature data of the heating plate transmitted from the transmitting unit, The temperature control unit, With the temperature measuring wafer placed on the heating plate, the temperature of the heating plate is adjusted based on the temperature data of the heating plate. A substrate processing system characterized by the following features.

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