Light-emitting element and light-emitting device
The semiconductor structure with a silver-containing conductive member and overlapping insulating and metal layers addresses crack issues in light-emitting elements, enhancing reliability by reducing cracks and short circuits.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- NICHIA CORP
- Filing Date
- 2024-11-27
- Publication Date
- 2026-06-08
Smart Images
Figure 2026092857000001_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to a light-emitting element and a light-emitting device.
Background Art
[0002] A light-emitting element has been proposed in which silver having a high reflectance is used as a material for a p-side conductive layer in contact with a p-type semiconductor layer (see Patent Document 1).
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] In a conventional light-emitting element, cracks may occur in an insulating layer covering the p-side conductive layer. When cracks occur in the insulating layer, migration of metal atoms contained in the p-side conductive layer is likely to occur.
[0005] An object of the present disclosure is to provide a light-emitting element and a light-emitting device capable of reducing the occurrence of cracks in an insulating layer.
Means for Solving the Problems
[0006] According to one aspect of the disclosed technology, the light-emitting element includes a semiconductor structure having a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer; a conductive member disposed on the second semiconductor layer and containing silver or aluminum; a first insulating layer disposed on the conductive member; a first electrode disposed on the first insulating layer and electrically connected to the first semiconductor layer; a second electrode disposed on the first insulating layer and electrically connected to the conductive member; a second insulating layer disposed on the first electrode and the second electrode; a first external connection portion disposed on the second insulating layer and electrically connected to the first electrode; a second external connection portion disposed on the second insulating layer and electrically connected to the second electrode; and a metal layer disposed on the second insulating layer and separated from the first and second external connection portions, wherein, in a top view, at least a portion of the edge of the conductive member overlaps with the first insulating layer, the first electrode, the second insulating layer, and the metal layer. [Effects of the Invention]
[0007] According to this disclosure, it is possible to provide a light-emitting element and a light-emitting device that can reduce the occurrence of cracks in the insulating layer. [Brief explanation of the drawing]
[0008] [Figure 1] This is a top view showing a light-emitting element according to the first embodiment. [Figure 2] This is a cross-sectional view showing a light-emitting element according to the first embodiment. [Figure 3] This is a top view showing the substrate and the semiconductor structure. [Figure 4] This is a top view showing the substrate, the translucent conductive layer, and the dielectric layer. [Figure 5] This is a top view showing the substrate and the conductive material. [Figure 6] This is a top view showing the substrate, the n-side electrode and p-side electrode, the first insulating layer, and the conductive member. [Figure 7] This is a top view showing the first external connection part, the second external connection part and metal layer, the second insulating layer, the n-side electrode and the p-side electrode. [Figure 8] This is a top view showing the substrate, the first external connection part, the second external connection part and metal layer, the conductive member and semiconductor structure. [Figure 9] This is a top view showing a substrate, a first external connection part, a second external connection part, a metal layer, a conductive member, and a semiconductor structure in a light-emitting element according to a modified example of the first embodiment. [Figure 10] This is a cross-sectional view showing a light-emitting device according to the second embodiment. [Modes for carrying out the invention]
[0009] The following describes embodiments for implementing this disclosure with reference to the drawings. The following description is intended to embody the technical concept of this disclosure and, unless otherwise specified, does not limit this disclosure to the following description.
[0010] In each drawing, components with the same function may be denoted by the same reference numeral. For convenience, the drawings may be divided into embodiments to facilitate explanation or understanding of key points, but partial substitution or combination of configurations shown in different embodiments or examples is possible. In later embodiments, the differences from the earlier embodiments will be mainly explained, and redundant explanations of common aspects may be omitted. The size and positional relationships of components shown in each drawing may be exaggerated to clarify the explanation. To avoid making the drawings excessively complex, some elements may be omitted from the illustration, or end views showing only the cross-section may be used as cross-sectional views. In addition, the following explanation uses the XYZ Cartesian coordinate system, but this coordinate system is defined for explanatory purposes and does not limit the orientation of the substrate, etc. Also, from any point, the +Z side may be referred to as upward, upper, or top, and the -Z side may be referred to as downward, lower, or bottom. Viewing along the Z direction is referred to as a "plan view".
[0011] (First Embodiment) First, the light-emitting element according to the first embodiment will be described. Figure 1 is a top view showing the light-emitting element according to the first embodiment. Figure 2 is a cross-sectional view showing the light-emitting element according to the first embodiment. Figure 2 corresponds to the cross-sectional view along line II-II in Figure 1.
[0012] As shown in Figures 1 and 2, the light-emitting element 1 according to the first embodiment includes a substrate 10, a semiconductor structure 20, a light-transmitting conductive layer 31, a conductive member 32, a first insulating layer 41, a second insulating layer 42, a dielectric layer 43, an n-side electrode 51 as a first electrode, a p-side electrode 52 as a second electrode, a first external connection part 61, a second external connection part 62, a metal layer 70, a first conductive post 81, and a second conductive post 82.
[0013] The substrate 10 is an insulating substrate, such as a sapphire substrate. The shape of the substrate 10 when viewed from above is, for example, square. When the shape of the substrate 10 when viewed from above is square, the length of one side of the substrate 10 is, for example, 500 μm or more and 2000 μm or less. The semiconductor structure 20 is placed on the substrate 10. When viewed from above, the edge of the semiconductor structure 20 is inside the edge of the substrate 10. The semiconductor structure 20 has a first semiconductor layer 21, an active layer 22, and a second semiconductor layer 23. The first semiconductor layer 21 is placed on the substrate 10, the active layer 22 is placed on the first semiconductor layer 21, and the second semiconductor layer 23 is placed on the active layer 22. The active layer 22 is a light-emitting layer that emits light, for example, light with an emission peak wavelength of 210 nm or more and 580 nm or less. The active layer 22 can have a multiple quantum well (MQW) structure, for example, including a plurality of barrier layers and a plurality of well layers. The first semiconductor layer 21 has a semiconductor layer containing n-type impurities. The second semiconductor layer 23 has a semiconductor layer containing p-type impurities.
[0014] For example, the material used for the semiconductor structure 20 is a compound semiconductor such as a III-V compound semiconductor or a II-VI compound semiconductor. For example, a nitride semiconductor is used for the semiconductor structure 20. In this specification, "nitride semiconductor" means, for example, In x Al y Ga1-x-y It shall include semiconductors of all compositions in which the composition ratios x and y are varied within their respective ranges in the chemical formula N(0≦x≦1, 0≦y≦1, x + y≦1). Also, in the above chemical formula, those further containing group V elements other than N (nitrogen), and those further containing various elements added to control various physical properties such as conductivity type shall also be included in the "nitride semiconductor".
[0015] Figure 3 is a top view showing the substrate 10 and the semiconductor structure 20. As shown in FIGS. 2 and 3, the semiconductor structure 20 has a mesa portion 25. The mesa portion 25 is a portion of the semiconductor structure 20 in which the first semiconductor layer 21, the active layer 22, and the second semiconductor layer 23 are stacked in the thickness direction (Z direction). In a top view, there is a first semiconductor layer 21 around the mesa portion 25 where the active layer 22 and the second semiconductor layer 23 are not disposed. Also, the mesa portion 25 has a plurality of, in this example, 25 openings 20A reaching the first semiconductor layer 21. At the bottom of the openings 20A, there is the first semiconductor layer 21. The 25 openings 20A are arranged in a 5-row and 5-column matrix in a top view. Five of the openings 20A are arranged on a center line CL parallel to the Y axis that bisects the substrate 10 in the X-axis direction, ten of the openings 20A are arranged in a region 10A on the +X side of the center line CL, and ten of the openings 20A are arranged in a region 10B on the -X side of the center line CL.
[0016] Figure 4 is a top view showing the substrate 10, the transparent conductive layer 31, and the dielectric layer 43. As shown in FIG. 2, the transparent conductive layer 31 is disposed on the second semiconductor layer 23 and is electrically connected to the second semiconductor layer 23. The transparent conductive layer 31 diffuses the current supplied from the p-side electrode 52 described later in the plane direction of the second semiconductor layer 23. The transparent conductive layer 31 has a plurality of, in this example, 25 openings 31A each overlapping with the opening 20A in a top view. As the material of the transparent conductive layer 31, for example, indium tin oxide (ITO) is used.
[0017] As shown in FIG. 2, the dielectric layer 43 covers the upper surface and the side surface of the translucent conductive layer 31, the side surface of the mesa portion 25, and the upper surface of the first semiconductor layer 21. The dielectric layer 43 has a plurality of openings 43A and 43C reaching the upper surface of the first semiconductor layer 21, and a plurality of openings 43B reaching the translucent conductive layer 31. As shown in FIG. 4, in a top view, the opening 43A is located inside the opening 31A, and the opening 43C is located outside the translucent conductive layer 31. As the material of the dielectric layer 43, for example, at least one oxide or nitride selected from the group consisting of silicon (Si), titanium (Ti), zirconium (Zr), niobium (Nb), tantalum (Ta), and aluminum (Al) is used.
[0018] FIG. 5 is a top view showing the substrate 10 and the conductive member 32. As shown in FIG. 2, the conductive member 32 is disposed on the dielectric layer 43 located above the translucent conductive layer 31. That is, the conductive member 32 is disposed on the second semiconductor layer 23. The conductive member 32 contains silver (Ag) or aluminum (Al). The conductive member 32 is in contact with the translucent conductive layer 31 through the opening 43B. The conductive member 32 is electrically connected to the second semiconductor layer 23 through the translucent conductive layer 31.
[0019] The conductive member 32 has an edge 110. The edge 110 has a first edge portion 111 respectively located between the outer edge of the semiconductor structure 20 and the outer edge of the first external connection portion 61 described later, and between the outer edge of the semiconductor structure 20 and the outer edge of the second external connection portion 62 described later (see FIG. 8). The conductive member 32 has a plurality of, in this example, 25 openings 32A each of which overlaps with the opening 20A in a top view. As shown in FIG. 8, five openings 32A are arranged on the center line CL and are located between the first external connection portion 61 and the second external connection portion 62 in a top view. Ten openings 32A are arranged in the region 10A and overlap with the first external connection portion 61 in a top view. Ten openings 32A are arranged in the region 10B and overlap with the second external connection portion 62 in a top view. The opening 32A has a second edge portion 112. The conductive member 32 is located between the first external connection portion 61 and the second external connection portion 62 in a top view and has an opening 32A having a second edge portion 112. The second edge portion 112 is included in the edge 110.
[0020] Figure 6 is a top view showing the substrate 10, the n-side electrode 51 and the p-side electrode 52, the first insulating layer 41, and the conductive member 32. As shown in Figure 2, the first insulating layer 41 is placed on the conductive member 32. The first insulating layer 41 covers the top and side surfaces of the conductive member 32 and the top and side surfaces of the dielectric layer 43. In a top view, the first insulating layer 41 overlaps with the first edge 111 and the second edge 112 of the conductive member 32. The first insulating layer 41 has a plurality of openings 41A, each of which is inside the opening 20A and connected to the opening 43A (in this example, 25 openings 41A), a plurality of openings 41B, each of which is reaching the conductive member 32 (in this example, 6 openings 41B), and a plurality of openings 41C, each of which is around the mesa portion 25 and connected to the opening 43C. The 6 openings 41B are arranged along the Y-axis within region 10B. In a top view, two openings 32A aligned in the X-axis direction are positioned between two adjacent openings 41B in the Y-axis direction. As the material for the first insulating layer 41, for example, at least one oxide or nitride selected from the group consisting of silicon, titanium, zirconium, niobium, tantalum, and aluminum is used.
[0021] The n-side electrode 51 and the p-side electrode 52 are arranged on the first insulating layer 41, spaced apart from each other. In a top view, the shape of the p-side electrode 52 is, for example, a rectangle with a long side parallel to the X-axis and a short side parallel to the Y-axis. The corners of the rectangular p-side electrode 52 may be rounded. Multiple p-side electrodes 52 are arranged in a row along the Y-axis within region 10B; in this example, there are six. Each p-side electrode 52 contacts the conductive member 32 through one opening 41B and is electrically connected to the conductive member 32. The n-side electrode 51 is arranged on the first insulating layer 41. In a top view, the n-side electrode 51 overlaps with the first edge 111 and the second edge 112 of the conductive member 32. The n-side electrode 51 contacts the first semiconductor layer 21 through openings 41A and 43A and is electrically connected to the first semiconductor layer 21.
[0022] Figure 7 is a top view showing the first external connection part 61, the second external connection part 62 and the metal layer 70, the second insulating layer 42, the n-side electrode 51 and the p-side electrode 52. Figure 8 is a top view showing the substrate 10, the first external connection part 61, the second external connection part 62 and the metal layer 70, the conductive member 32 and the semiconductor structure 20. As shown in Figure 2, the second insulating layer 42 is placed on the n-side electrode 51 and the p-side electrode 52. The second insulating layer 42 covers the top and side surfaces of the n-side electrode 51 and the p-side electrode 52, the surface of the first insulating layer 41 and the dielectric layer 43, the top and side surfaces of the first semiconductor layer 21 and the top surface of the substrate 10. In a top view, the second insulating layer 42 overlaps with the first edge 111 and the second edge 112 of the conductive member 32. The second insulating layer 42 has an opening 42A that reaches the n-side electrode 51 within region 10A, and a plurality of openings 42B within region 10B, each reaching the p-side electrode 52, in this example, six openings 42B. As the material for the second insulating layer 42, for example, at least one oxide or nitride selected from the group consisting of silicon, titanium, zirconium, niobium, tantalum, and aluminum is used.
[0023] The first external connection portion 61 is positioned on the second insulating layer 42 within region 10A and contacts the n-side electrode 51 through an opening 42A. The second external connection portion 62 is positioned on the second insulating layer 42 within region 10B and contacts multiple p-side electrodes 52 through multiple openings 42B. The first external connection portion 61 is electrically connected to the n-side electrode 51, and the second external connection portion 62 is electrically connected to the p-side electrode 52. A portion of the n-side electrode 51 is located below the first external connection portion 61, and a portion of the n-side electrode 51 and the p-side electrode 52 are located below the second external connection portion 62. In a top view, the first external connection portion 61 overlaps with the second edges 112 of the 10 openings 32A within region 10A of the conductive member 32. In a top view, the second external connection portion 62 overlaps with the second edges 112 of the 10 openings 32A within region 10B of the conductive member 32.
[0024] The metal layer 70 is positioned on the second insulating layer 42 and is separated from the first external connection portion 61 and the second external connection portion 62. As shown in Figures 2 and 8, the metal layer 70 has a first portion 71 and a third portion 73. As described above, the edge 110 of the conductive member 32 has a first edge portion 111 located between the outer edge of the semiconductor structure 20 and the outer edge of the first external connection portion 61, and between the outer edge of the semiconductor structure 20 and the outer edge of the second external connection portion 62, respectively, in a top view. The first portion 71 overlaps with the first edge portion 111 in a top view. In a top view, the first portion 71 is positioned along the edge of the substrate 10. The third portion 73 overlaps with the second edge portion 112 of the opening 32A in a top view. In this example, the third portion 73 extends along the Y-axis between the first external connection portion 61 and the second external connection portion 62 in a top view and overlaps with the second edges 112 of the five openings 32A on the center line CL. In a top view, the first portion 71 and the third portion 73 are connected to each other. Thus, in a top view, the metal layer 70 overlaps with the first edges 111 and the second edges 112 of the conductive member 32.
[0025] As shown in Figures 2 and 8, the first semiconductor layer 21 is located outside the first edge portion 111 in a top view and has a first region 121 where the active layer 22 and the second semiconductor layer 23 are not located, and the n-side electrode 51 is in contact with the first region 121 through openings 41A and 43A. The metal layer 70 has a second portion 72 that overlaps with the first region 121 in a top view. The second portion 72 overlaps with the region where the n-side electrode 51 and the first region 121 are in contact in a top view. In a top view, the first portion 71, the second portion 72 and the third portion 73 are connected to each other. The second portion 72 is located outside the first external connection portion 61 and the second external connection portion 62 in a top view.
[0026] Furthermore, as shown in Figures 2 and 8, the first semiconductor layer 21 is located inside the second edge portion 112 in a top view and has a second region 122 where the active layer 22 and the second semiconductor layer 23 are not located, and the n-side electrode 51 is in contact with the second region 122 through openings 41A and 43A. The metal layer 70 has a fourth portion 74 that overlaps with the second region 122 in a top view. The fourth portion 74 overlaps with the region where the n-side electrode 51 and the second region 122 are in contact in a top view. In a top view, the first portion 71, the second portion 72, the third portion 73 and the fourth portion 74 are connected to each other. The fourth portion 74 is located between the first external connection portion 61 and the second external connection portion 62 in a top view.
[0027] The materials used for the first external connection part 61, the second external connection part 62, and the metal layer 70 include, for example, metals such as gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), nickel (Ni), tungsten (W), molybdenum (Mo), chromium (Cr), titanium (Ti), aluminum (Al), and copper (Cu), or alloys of these metals. The first external connection part 61, the second external connection part 62, and the metal layer 70 can be formed, for example, simultaneously.
[0028] The first conductive post 81 is positioned on the first external connection part 61. The second conductive post 82 is positioned on the second external connection part 62. For example, copper and gold can be used as materials for the first conductive post 81 and the second conductive post 82.
[0029] Thus, in the light-emitting element 1 according to the first embodiment, when viewed from above, the edge 110 of the conductive member 32 overlaps with the first insulating layer 41, the n-side electrode 51, the second insulating layer 42, and the metal layer 70. Therefore, the first insulating layer 41 and the second insulating layer 42 are mechanically reinforced by the n-side electrode 51 and the metal layer 70 near the edge 110 of the conductive member 32, and the occurrence of cracks in the first insulating layer 41 and the second insulating layer 42 near the edge 110 of the conductive member 32 can be reduced. If a crack occurs in the first insulating layer 41, migration of metal atoms contained in the conductive member 32, such as Ag atoms or Al atoms, is likely to occur, and there is a risk of a short circuit occurring between the conductive member 32 and the n-side electrode 51. However, according to this embodiment, such a short circuit can be reduced.
[0030] Furthermore, in a top view, it is not necessary for the entire edge 110 of the conductive member 32 to overlap with the first insulating layer 41, the n-side electrode 51, the second insulating layer 42, and the metal layer 70; it is sufficient if at least a portion of the edge 110 overlaps with the first insulating layer 41, the n-side electrode 51, the second insulating layer 42, and the metal layer 70. By having at least a portion of the edge 110 of the conductive member 32 overlap with the first insulating layer 41, the n-side electrode 51, the second insulating layer 42, and the metal layer 70, the occurrence of cracks in the first insulating layer 41 and the second insulating layer 42 in the portion overlapping with the edge 110 of the conductive member 32 and in its vicinity can be reduced.
[0031] The first edge 111 is a part that is prone to large stresses when mounting the light-emitting element 1, but by having a first portion 71 of the metal layer 70 that overlaps with the first edge 111 in a top view, the occurrence of cracks near the first edge 111 can be reduced. Furthermore, by having a third portion 73 of the metal layer 70 that overlaps with the second edge 112 in a top view, the occurrence of cracks near the second edge 112 can be reduced. Moreover, by having the first portion 71 and the third portion 73 connected in a top view, it is easier to obtain high mechanical strength in the metal layer 70 itself. However, the first portion 71 and the third portion 73 do not need to be connected to each other, and as shown in Figure 9, the first portion 71 and the third portion 73 may be separated from each other in a top view. Also, the third portion 73 may be individually arranged for each opening 32A.
[0032] Furthermore, the metal layer 70 can reduce the intrusion of moisture from the outside into the second insulating layer 42 and the first insulating layer 41. The intrusion of moisture into the second insulating layer 42 and the first insulating layer 41 can cause ionization of metal atoms contained in the conductive member 32 and the resulting migration, as well as oxidation of the semiconductor structure 20. In contrast, in this embodiment, the metal layer 70 has a first portion 71 and a second portion 72, which reduces the intrusion of moisture from the outside into the second insulating layer 42 and the first insulating layer 41 compared to, for example, a case where the metal layer 70 does not have the first portion 71. Also, by having a third portion 73 and a fourth portion 74, the intrusion of moisture from the outside into the second insulating layer 42 and the first insulating layer 41 can be reduced compared to, for example, a case where the metal layer 70 does not have the fourth portion 74.
[0033] The translucent conductive layer 31 and the dielectric layer 43 do not necessarily have to be arranged. In this case, the conductive member 32 is in direct contact with the second semiconductor layer 23.
[0034] (Second Embodiment) Next, a light-emitting device according to the second embodiment will be described. Figure 10 is a cross-sectional view showing the light-emitting device according to the second embodiment.
[0035] As shown in Figure 10, the light-emitting device 200 according to the second embodiment includes a support substrate 90, a light-emitting element 1 according to the first embodiment, an n-side external terminal 201, a p-side external terminal 202, a bonding layer 203, a bonding layer 204, and a resin member 210.
[0036] The support substrate 90 has an n-side terminal 91 as a first terminal and a p-side terminal 92 as a second terminal on its upper surface 90A. The light-emitting element 1 is bonded to the support substrate 90 by bonding layers 93 and 94.
[0037] The n-side external terminal 201 is joined to the first conductive post 81 by a bonding layer 203, and the p-side external terminal 202 is joined to the second conductive post 82 by a bonding layer 204. The n-side external terminal 201 and the p-side external terminal 202 are, for example, metal members. The bonding layers 203 and 204 are, for example, solder layers. The light-emitting element 1, the n-side external terminal 201, the p-side external terminal 202, the bonding layer 203, and the bonding layer 204 are sealed by a resin member 210. The resin member 210 is, for example, a light-reflective resin.
[0038] The n-side external terminal 201 is joined to the n-side terminal 91 by a bonding layer 93, and the n-side external terminal 201 is electrically connected to the n-side terminal 91. The p-side external terminal 202 is joined to the p-side terminal 92 by a bonding layer 94, and the p-side external terminal 202 is electrically connected to the p-side terminal 92. The bonding layers 93 and 94 are, for example, solder layers.
[0039] Although preferred embodiments have been described in detail above, the invention is not limited to the embodiments described above, and various modifications and substitutions can be made to the embodiments described above without departing from the scope of the claims.
[0040] This specification includes the following embodiments. 1. A semiconductor structure having a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer, Displaced on the second semiconductor layer is a conductive member containing silver or aluminum, A first insulating layer disposed on the conductive member, A first electrode is disposed on the first insulating layer and electrically connected to the first semiconductor layer, A second electrode is disposed on the first insulating layer and electrically connected to the conductive member, A second insulating layer disposed on the first electrode and the second electrode, A first external connection portion is disposed on the second insulating layer and electrically connected to the first electrode, A second external connection portion is disposed on the second insulating layer and electrically connected to the second electrode, It has a metal layer disposed on the second insulating layer and separated from the first external connection portion and the second external connection portion, In a top view, at least a portion of the edge of the conductive member overlaps with the first insulating layer, the first electrode, the second insulating layer, and the metal layer, respectively, in a light-emitting element. 2. The edge of the conductive member has a first edge portion located between the outer edge of the semiconductor structure and the outer edge of the first external connection portion, and between the outer edge of the semiconductor structure and the outer edge of the second external connection portion, respectively, when viewed from above. The light-emitting element according to claim 1, wherein the metal layer has a first portion that overlaps with the first edge when viewed from above. 3. The first semiconductor layer has a first region located outside the first edge when viewed from above, in which the active layer and the second semiconductor layer are not disposed. The first electrode is in contact with the first region, The light-emitting element according to claim 2, wherein the metal layer has a second portion that overlaps with the first region when viewed from above. 4. The conductive member is located between the first external connection portion and the second external connection portion in a top view and has an opening with a second edge portion. The light-emitting element according to claim 2 or 3, wherein the metal layer has a third portion that overlaps with the second edge when viewed from above. 5. The first semiconductor layer has a second region located inside the second edge when viewed from above, in which the active layer and the second semiconductor layer are not disposed. The first electrode is in contact with the second region, The light-emitting element according to claim 4, wherein the metal layer has a fourth portion that overlaps with the second region when viewed from above. 6. The light-emitting element according to 4 or 5 above, wherein the first part and the third part are connected when viewed from above. 7. The light-emitting element according to 4 or 5 above, wherein, in a top view, the first part and the third part are separated from each other. 8. A light-emitting element as described in any one of items 1 to 7 above, A support substrate having a first terminal and a second terminal on its upper surface, It has, The first external connection part is electrically connected to the first terminal, The second external connection part is a light-emitting device that is electrically connected to the second terminal. [Explanation of Symbols]
[0041] 1 Light-emitting element 10 circuit boards 20 Semiconductor Structures 20A aperture 21 First Semiconductor Layer 22 Active layer 23 Second Semiconductor Layer 25 Mesa 31 Transparent conductive layer 32 Conductive members 32A aperture 41. First insulating layer 41A, 41B opening 42 Second insulating layer 42A, 42B opening 51 n-side electrode 52 p side electrode 61 First external connection section 62 Second external connection section 70 metal layer 71 Part 1 72 Part 2 73 Part 3 74 Part 4 90 Support substrate 90A top 91 n-side terminal 92 p side terminal 110 yen 111 First edge 112 Second edge 121 1st area 122 Second area 200 Light-emitting devices
Claims
1. A semiconductor structure having a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer, A conductive member comprising silver or aluminum is disposed on the second semiconductor layer, A first insulating layer disposed on the conductive member, A first electrode is disposed on the first insulating layer and electrically connected to the first semiconductor layer, A second electrode is disposed on the first insulating layer and electrically connected to the conductive member, A second insulating layer disposed on the first electrode and the second electrode, A first external connection portion is disposed on the second insulating layer and electrically connected to the first electrode, A second external connection portion is disposed on the second insulating layer and electrically connected to the second electrode, It has a metal layer disposed on the second insulating layer and separated from the first external connection portion and the second external connection portion, A light-emitting element, in a top view, wherein at least a portion of the edge of the conductive member overlaps with the first insulating layer, the first electrode, the second insulating layer, and the metal layer.
2. The edge of the conductive member has a first edge portion located between the outer edge of the semiconductor structure and the outer edge of the first external connection portion, and between the outer edge of the semiconductor structure and the outer edge of the second external connection portion, respectively, when viewed from above. The light-emitting element according to claim 1, wherein the metal layer has a first portion that overlaps with the first edge when viewed from above.
3. The first semiconductor layer has a first region located outside the first edge when viewed from above, in which the active layer and the second semiconductor layer are not disposed. The first electrode is in contact with the first region, The light-emitting element according to claim 2, wherein the metal layer has a second portion that overlaps with the first region when viewed from above.
4. The conductive member is located between the first external connection portion and the second external connection portion in a top view and has an opening with a second edge portion. The light-emitting element according to claim 2 or 3, wherein the metal layer has a third portion that overlaps with the second edge when viewed from above.
5. The first semiconductor layer, when viewed from above, is located inside the second edge and has a second region where the active layer and the second semiconductor layer are not disposed. The first electrode is in contact with the second region, The light-emitting element according to claim 4, wherein the metal layer has a fourth portion that overlaps with the second region in a top view.
6. The light-emitting element according to claim 4, wherein the first part and the third part are connected in a top view.
7. The light-emitting element according to claim 4, wherein, in a top view, the first part and the third part are separated from each other.
8. A light-emitting element according to any one of claims 1 to 3, A support substrate having a first terminal and a second terminal on its upper surface, It has, The first external connection part is electrically connected to the first terminal, The second external connection part is a light-emitting device that is electrically connected to the second terminal.