Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and program
By non-simultaneously supplying metal and nitrogen/carbon-containing gases to form a titanium nitride film, the fluorine diffusion issue in metal films is addressed, resulting in improved barrier film properties and semiconductor device performance.
JP2026094407APending Publication Date: 2026-06-09KOKUSAI DENKI KK
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- KOKUSAI DENKI KK
- Filing Date
- 2026-03-10
- Publication Date
- 2026-06-09
AI Technical Summary
Technical Problem
The formation of a metal film using fluorine-containing gases like WF6 can lead to fluorine diffusion into underlying silicon oxide films, degrading semiconductor device performance, necessitating a barrier film to suppress this diffusion.
Method used
A method involving the non-simultaneous supply of metal-containing and nitrogen/carbon-containing gases to form a film that includes titanium nitride, enhancing the barrier properties by overlapping supply periods and performing multiple cycles to incorporate nitrogen and carbon into the film.
Benefits of technology
Improves the properties of the barrier film, reducing fluorine diffusion and enhancing the performance of semiconductor devices by forming a titanium nitride film with improved conductivity and diffusion suppression.
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Smart Images
Figure 2026094407000001_ABST
Abstract
This invention provides a technology to improve the properties of barrier films formed on a substrate. [Solution] The method includes the steps of (a) introducing a first gas containing a first element and a second gas containing a second element different from the first element into a first gas nozzle to mix them, and supplying the mixed gas containing the first gas and the second gas to a substrate from the first gas nozzle, and (b) after (a), supplying a third gas containing a third element different from both the first and second elements to the substrate from a second gas nozzle different from the first gas nozzle, and performing this cycle a predetermined number of times to form a film on the substrate containing the first element, the second element and the third element.
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