Ion source
By heating the plasma generation chamber to match or exceed the crucible temperature before gas generation, the ion source prevents nozzle clogging and enhances vaporizer lifespan during startup.
JP2026098965APending Publication Date: 2026-06-18NISSIN ION EQUIPMENT CO LTD
Patent Information
- Application Number
- JP2024212988
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-12-06
- Publication Date
- 2026-06-18
AI Technical Summary
Technical Problem
Nozzle clogging occurs in ion sources due to recrystallization of gas during startup when the nozzle temperature is lower than the plasma generation chamber temperature, leading to reduced lifespan and operational inefficiency.
Method used
A warm-up process is implemented where the plasma generation chamber is heated to a temperature equal to or higher than the crucible temperature before gas generation, maintaining the nozzle temperature above the crucible temperature during startup to prevent recrystallization.
Benefits of technology
Prevents nozzle clogging and extends the lifespan of the vaporizer by ensuring the nozzle remains above the crucible temperature during startup, maintaining operational efficiency.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure 2026098965000001_ABST
Abstract
It prevents nozzle clogging and improves the lifespan of the vaporizer. [Solution] The ion sources IS1, IS2, and IS3 are ion sources having vaporizers C1, C2, and C3 that supply gas generated inside crucibles 2 and 32 to the plasma generation chamber 1 through nozzles 3. When the ion sources IS1, IS2, and IS3 are operated from a stopped state, the plasma generation chamber 1 is heated up before gas is generated inside crucibles C1, C2, and C3, so that the temperature of the plasma generation chamber 1 is equal to or higher than the crucible temperature during ion source operation.
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Citation Information
Patent Citations
Oven for ion source
JP2002324493A