Light-emitting element
The light-emitting element design with a recessed reflective film and layered semiconductor structure addresses absorption issues, improving light extraction efficiency and brightness uniformity while reducing forward voltage.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- NICHIA CORP
- Filing Date
- 2024-12-10
- Publication Date
- 2026-06-22
AI Technical Summary
Existing light-emitting devices suffer from reduced light extraction efficiency due to absorption of emitted light by the n-side semiconductor layer.
A light-emitting element design featuring a semiconductor structure with a recess and an insulating reflective film, where the n-side semiconductor layer is divided into layers with different bandgap energies, and a reflective region positioned within the recess to reduce light absorption.
Improves light extraction efficiency by minimizing absorption of emitted light, enhancing brightness uniformity, and reducing forward voltage.
Smart Images

Figure 2026100978000001_ABST