Light-emitting element

The light-emitting element design with a recessed reflective film and layered semiconductor structure addresses absorption issues, improving light extraction efficiency and brightness uniformity while reducing forward voltage.

JP2026100978APending Publication Date: 2026-06-22NICHIA CORP

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
NICHIA CORP
Filing Date
2024-12-10
Publication Date
2026-06-22

AI Technical Summary

Technical Problem

Existing light-emitting devices suffer from reduced light extraction efficiency due to absorption of emitted light by the n-side semiconductor layer.

Method used

A light-emitting element design featuring a semiconductor structure with a recess and an insulating reflective film, where the n-side semiconductor layer is divided into layers with different bandgap energies, and a reflective region positioned within the recess to reduce light absorption.

Benefits of technology

Improves light extraction efficiency by minimizing absorption of emitted light, enhancing brightness uniformity, and reducing forward voltage.

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Abstract

To provide a light-emitting element that can improve light extraction efficiency. [Solution] The light-emitting element comprises a p-side electrode, a semiconductor structure, an n-side electrode, and an insulating reflective film. The semiconductor structure has a p-side semiconductor layer, an active layer, and an n-side semiconductor layer. The semiconductor structure has a recess that opens to the lower side of the p-side semiconductor layer and penetrates the p-side semiconductor layer and the active layer. The insulating reflective film is located below the semiconductor structure. The insulating reflective film has a first reflective region and a second reflective region. The first reflective region is located below the p-side semiconductor layer. The second reflective region is continuous with the first reflective region and is located within the recess. The second reflective region is located in a position that overlaps with the second layer in the vertical direction. The upper surface of the second reflective region is located below the upper surface of the first layer.
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