Plasma processing apparatus and plasma generation method

The plasma processing apparatus enhances plasma density control through a resonator with slots and impedance adjustment, improving plasma processing efficiency by controlling electromagnetic wave intensity and interference.

JP2026101453APending Publication Date: 2026-06-22TOKYO ELECTRON LTD

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
TOKYO ELECTRON LTD
Filing Date
2024-12-10
Publication Date
2026-06-22

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Abstract

This improves the controllability of the plasma density distribution generated inside the chamber. [Solution] The plasma processing apparatus comprises a chamber containing a plasma generation space U, an annular outer emission section positioned above the chamber, and a resonator that supplies electromagnetic waves to the outer emission section. The resonator has a waveguide through which electromagnetic waves generated based on high-frequency power supplied by a high-frequency power supply propagate, and a plurality of outer slots that electromagnetically couple the waveguide and the outer emission section together. The plurality of outer slots consist of a plurality of partial grooves extending along the circumferential direction of the outer emission section above the outer emission section. A switching mechanism is provided for changing the impedance of each of the plurality of outer slots. A coaxial tube is provided between the switching mechanism and the corresponding outer slot, and the switching mechanism is attached to the end of the coaxial tube opposite to the corresponding outer slot.
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