Light-emitting element

Abstract

To provide a light-emitting element that can improve light extraction efficiency. [Solution] The light-emitting element comprises a p-side electrode, a conductive film, a first insulating film, a semiconductor structure, and an n-side electrode. The conductive film is electrically connected to the p-side electrode. The first insulating film is placed on the conductive film and has through holes penetrating in the vertical direction. The semiconductor structure comprises a p-side semiconductor layer, an active layer, and an n-side semiconductor layer. The p-side semiconductor layer is placed on the first insulating film and is electrically connected to the conductive film via through holes. The active layer is placed on the p-side semiconductor layer. The n-side semiconductor layer is placed on the active layer. The n-side electrode is placed on a portion of the n-side semiconductor layer at a position that does not overlap with the through holes in the vertical direction and is electrically connected to the n-side semiconductor layer. The semiconductor structure has a recess that opens on the upper side of the n-side semiconductor layer and penetrates the n-side semiconductor layer and the active layer. The recess is placed at a position that overlaps with the through holes in the vertical direction.

Claims

1. p-side electrode and, A conductive film electrically connected to the p-side electrode, A first insulating film is disposed on the conductive film and has through holes that penetrate in the vertical direction, A semiconductor structure comprising: a p-side semiconductor layer disposed on the first insulating film and electrically connected to the conductive film through the through-hole; an active layer disposed on the p-side semiconductor layer and emitting light having a peak wavelength of 610 nm to 700 nm; and an n-side semiconductor layer disposed on the active layer; An n-side electrode is positioned on a portion of the n-side semiconductor layer, in a position that does not overlap with the through-hole in the vertical direction, and is electrically connected to the n-side semiconductor layer. Equipped with, The semiconductor structure has a recess that opens on the upper surface side of the n-side semiconductor layer and penetrates the n-side semiconductor layer and the active layer. The recess is a light-emitting element positioned in the vertical direction, overlapping with the through-hole.

2. The light-emitting element according to claim 1, wherein the bottom surface of the recess is located above the bottom surface of the p-side semiconductor layer.

3. The light-emitting element according to claim 1, wherein the recess penetrates the p-side semiconductor layer.

4. The light-emitting element according to claim 1, wherein the width of the recess is the same as the width of the through hole.

5. The light-emitting element according to claim 1, wherein the width of the recess is greater than the width of the through hole.

6. The light-emitting element according to claim 1, wherein the width of the recess is smaller than the width of the through hole.

7. The light-emitting element according to claim 1, further comprising a second insulating film covering the bottom and side surfaces of the recess.

8. The light-emitting element according to claim 7, wherein the refractive index of the second insulating film is smaller than the refractive index of the n-side semiconductor layer.

9. The first insulating film has a plurality of through holes, The light-emitting element according to claim 1, wherein the semiconductor structure has a plurality of recesses arranged in positions that overlap with each of the plurality of through holes in the vertical direction.

10. The first insulating film has a plurality of through holes, The light-emitting element according to claim 1, wherein the plurality of through holes include a first through hole that overlaps with the recess in the vertical direction and a second through hole that does not overlap with the recess in the vertical direction.

11. The light-emitting element according to claim 10, wherein the first through-hole is located between the p-side electrode and the n-side electrode in a plan view.

12. In a plan view, the center of the recess coincides with the center of the through hole, as described in claim 1.

13. The light-emitting element according to claim 1, wherein, in a plan view, the center of the recess is located between the center of the through-hole and the n-side electrode, on a straight line connecting the center of the through-hole and the n-side electrode by the shortest distance.

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