Layered structure, method for manufacturing the same, device, and particle dispersion.

Abstract

This provides a structure that exhibits a high degree of balance between durability, conductivity, and quantum efficiency. [Solution] A layered structure comprising a substrate and a high-density particle layer on the substrate, wherein the high-density particle layer contains nanoparticles with an inorganic film formed on its surface, the nanoparticles having a particle size of 1 nm to 50 nm, the high-density particle layer having a packing density of nanoparticles per unit volume of 30 vol% to 80 vol%, the inorganic film having a thickness of 0.1 nm to 5 nm, the energy level at the upper end of the valence band of the inorganic film being the same as or lower than the energy level at the upper end of the valence band of the nanoparticles, and the energy level at the lower end of the conduction band of the inorganic film being the same as or higher than the energy level at the lower end of the conduction band of the nanoparticles.

Claims

1. The device comprises a substrate and a high-density particle layer on the substrate, The high-density particle layer contains nanoparticles on which an inorganic film is formed on the surface. The aforementioned nanoparticles have a particle size of 1 nm or more and 50 nm or less. The high-density particle layer has a filling rate of nanoparticles per unit volume of 30 vol% or more and 80 vol% or less. The inorganic film has a thickness of 0.1 nm or more and 5 nm or less. The energy level at the upper end of the valence band of the inorganic film is the same as or lower than the energy level at the upper end of the valence band of the nanoparticles, and the energy level at the lower end of the conduction band of the inorganic film is the same as or higher than the energy level at the lower end of the conduction band of the nanoparticles. A layered structure characterized by the following features.

2. A method for manufacturing a layered structure according to claim 1, Preparation step A involves preparing a particle dispersion A1 in which nanoparticles to which ligands that can react with at least one of light, heat, and moisture are bound are dispersed in solvent S1, A coating step A1 involves applying the particle dispersion A1 to the substrate, After the coating step A1, a film-forming step A is performed, in which at least one of light, heat, and moisture is applied to the coated surface to form a coating film. After the film formation step A, a removal step A1 is performed to remove the reacted ligand and the solvent S1 from the coating film. A coating step A2 is performed by applying a dispersion A2, in which an inorganic film-forming element is dispersed in a solvent S2, to the coating film after the removal step A1. A method for manufacturing a layered structure, characterized by comprising:

3. A method for manufacturing a layered structure according to claim 1, Preparation step B involves preparing a particle dispersion B in solvent S3, which comprises nanoparticles to which ligands that can react with at least one of light, heat, and moisture are bound, one or more first elements selected from metal elements and silicon (Si), and one or more second elements selected from elements belonging to Group 16 of the periodic table, phosphorus (P), arsenic (As), and antimony (Sb). Coating step B involves applying the particle dispersion B to the substrate, After the coating step B, a film-forming step B is performed, in which at least one of light, heat, and moisture is applied to the coated surface to form a coating film. A method for manufacturing a layered structure, characterized by comprising:

4. The method for manufacturing a layered structure according to claim 3, further comprising a sulfidation step of subjecting the inorganic film on the surface of the nanoparticles to a sulfidation treatment after the film formation step B.

5. A method for manufacturing a layered structure according to claim 1, Preparation step C involves preparing a particle dispersion C1 in which nanoparticles bound to a non-reactive ligand are dispersed in solvent S4, A coating step C1 involves applying the particle dispersion C1 to the substrate, After the coating step C1, a removal step C1 is performed to remove the solvent S4 from the particle dispersion C1 applied to the substrate to form a coating film. A film-forming step C is performed to form an inorganic-forming element on the aforementioned coating film, A method for manufacturing a layered structure, characterized by comprising:

6. A method for manufacturing a layered structure according to claim 1, Preparation step D: Prepare a particle dispersion D in solvent S6, comprising: nanoparticles bound to a non-reactive ligand, one or more first elements selected from metal elements and silicon (Si), and one or more second elements selected from elements belonging to Group 16 of the periodic table, phosphorus (P), arsenic (As), and antimony (Sb); A coating step D involves applying the particle dispersion D to the substrate, After the coating step D, a removal step D is performed to remove the solvent S6 from the particle dispersion D coated on the substrate. A method for manufacturing a layered structure, characterized by comprising:

7. A device characterized by comprising the layered structure described in claim 1.

8. The device according to claim 7, further comprising, in addition to the substrate and the high-density particle layer, at least one selected from an electrode layer, an electron transport layer, and a hole transport layer.

9. A particle dispersion characterized by comprising nanoparticles to which a ligand that is reactive or non-reactive in response to at least one of light, heat, and moisture is bound, one or more first elements selected from metal elements and silicon (Si), and one or more second elements selected from elements belonging to Group 16 of the periodic table, phosphorus (P), arsenic (As), and antimony (Sb), dispersed in a solvent.

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