Semiconductor equipment

Abstract

To impart stable electrical characteristics to transistors using oxide semiconductor films. To impart excellent electrical properties to transistors using a synthetic semiconductor film. To provide a highly reliable semiconductor device with a tactile function. [Solution] A multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate Regarding a transistor having an insulating film, the multilayer film has the gate insulating film through which the gate electrical The electrode is superimposed on the multilayer film, and the multilayer film is formed by the lower surface of the oxide semiconductor film and the side surface of the oxide semiconductor film. The shape has an angle 1 and a second angle formed by the bottom surface of the oxide film and the side surface of the oxide film. Furthermore, the first angle is smaller and more acute than the second angle. A semiconductor device is fabricated using this method.

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