Materials for atomic layer deposition and methods for forming silicon oxide films using the same
A novel atomic layer deposition material with halogen and isocyanate compounds forms high-quality silicon oxide films at high temperatures, addressing thermal decomposition issues and ensuring excellent adhesion and coverage.
JP2026105216APending Publication Date: 2026-06-26AIR WATER INC
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- AIR WATER INC
- Filing Date
- 2024-12-16
- Publication Date
- 2026-06-26
AI Technical Summary
Technical Problem
Conventional atomic layer deposition materials degrade at high temperatures, leading to thermal decomposition and unsuitable film formation for fine patterns due to poor adhesion and coverage.
Method used
A material for atomic layer deposition comprising compounds represented by specific formulas, including halogen atoms and isocyanate groups, is used to form silicon oxide films at temperatures between 25°C to 800°C, with a pressure of 7.6 Pa to 100 kPa, involving multiple introduction and purging steps to achieve high-quality film formation.
Benefits of technology
The material exhibits excellent heat resistance, enabling the formation of silicon oxide films with high adhesion and good coverage, even at elevated temperatures, suitable for fine patterns.
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Figure 2026105216000001_ABST
Abstract
To provide a material for atomic layer deposition with excellent heat resistance, and a method for forming a silicon oxide film with excellent film quality using the atomic layer deposition material. [Solution] A material for atomic layer deposition comprising at least one compound selected from the group consisting of compounds represented by formula (1) and compounds represented by formula (2), and a method for forming a silicon oxide film using the same. 1 , R 5 and R 6 Each is independently a halogen atom or an isocyanate group, R 2 , R 3 and R 4 These are independently either a methoxy group or an ethoxy group.
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