Semiconductor light-emitting device and semiconductor light-emitting module

Abstract

The present invention provides a semiconductor light-emitting device and a semiconductor light-emitting module that exhibit improved luminous flux and brightness, and suppressed angular dependence of chromaticity. [Solution] The device comprises a semiconductor light-emitting element 11, a wavelength conversion member 15 bonded to the upper surface of the semiconductor light-emitting element by a translucent adhesive layer 13, and a translucent coating layer 17 provided on the upper surface of the wavelength conversion member, having a refractive index between the refractive index of the wavelength conversion member and the refractive index of the air layer. The translucent coating layer is either a glass coating layer with a surface roughness in the range of 0.1 to 0.4 μm, or a nanoparticle sintered body coating layer.

Description

Technical Field

[0001] The present invention relates to a semiconductor light-emitting device and a semiconductor light-emitting module, and particularly to a semiconductor light-emitting device provided with a wavelength conversion element and a semiconductor light-emitting module having the semiconductor light-emitting device.

[0002] There is known a semiconductor light-emitting device that wavelength-converts the emitted light from a semiconductor light-emitting element by a wavelength conversion member and irradiates white light or light having color rendering properties. Such a semiconductor light-emitting device is used as a light source for lighting fixtures such as general lighting and exterior / interior lighting, and lamp devices such as vehicle lamps.

[0003] For example, Patent Document 1 discloses a semiconductor light-emitting device provided with an uncured light reflecting member that is provided on the outermost surface from which the wavelength-converted light of a wavelength conversion layer exits and has a property of repelling the light reflecting member that covers the side surface of the wavelength conversion layer, and having a rough thin film whose surface is formed following the rough surface of the wavelength conversion layer. In such a semiconductor light-emitting device, it is described that an improvement in light emission efficiency is achieved by suppressing the creeping of the coating member onto the light-emitting layer surface.

[0004] Further, Patent Document 2 discloses a semiconductor light-emitting device provided with a moisture-proof thin film on the surface of a wavelength conversion layer. In such a semiconductor light-emitting device, it is described that the occurrence of cracks in the coating member is suppressed, and thus suppression of light leakage is achieved.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0006] In semiconductor light-emitting devices equipped with wavelength conversion elements on semiconductor light-emitting elements, further improvements in luminous flux and brightness are required. Furthermore, conventional semiconductor light-emitting devices have had issues such as the angular dependence of chromaticity in the light emitted from the wavelength conversion element. Additionally, when the sides of the wavelength conversion element are covered with a coating material such as white resin, the coating material can creep up onto the surface of the wavelength conversion element, leading to problems such as reduced luminous efficiency.

[0007] The present invention has been made in view of the above-mentioned points, and aims to provide a semiconductor light-emitting device and a semiconductor light-emitting module in which luminous flux and brightness are improved and the angle dependence of chromaticity is suppressed. Furthermore, it aims to provide a semiconductor light-emitting device and a semiconductor light-emitting module having said semiconductor light-emitting device in which, even when the side surface of the semiconductor light-emitting device is covered with a covering member, the covering member is prevented from creeping up onto the surface of the wavelength conversion member. [Means for solving the problem]

[0008] Semiconductor light-emitting device of the present invention, Semiconductor light-emitting element and A wavelength conversion member bonded to the upper surface of the semiconductor light-emitting element by a translucent adhesive layer, The wavelength conversion member has a translucent coating layer provided on its upper surface, having a refractive index between the refractive index of the wavelength conversion member and the refractive index of the air layer, The translucent coating layer is either a glass coating layer having a surface roughness in the range of 0.1 to 0.4 μm, or a nanoparticle sintered coating layer.

[0009] The semiconductor light-emitting module of the present invention The aforementioned semiconductor light-emitting device, A circuit board on which the aforementioned semiconductor light-emitting device is mounted, The semiconductor light-emitting device has a covering resin that covers the entire side surface of the semiconductor light-emitting device while exposing the entire upper surface of the semiconductor light-emitting device. [Brief explanation of the drawing]

[0010] [Figure 1]This is a schematic cross-sectional view showing a semiconductor light-emitting device according to the first embodiment. [Figure 2] This diagram schematically shows a cross-section of the interface between the phosphor plate and the translucent coating layer. [Figure 3] This graph shows the rate of increase in luminous flux when a translucent coating layer is applied to a phosphor plate, with the case without the translucent coating layer as the baseline (REF). [Figure 4] This graph shows the angular dependence of the chromaticity of emitted light when a translucent coating layer is provided, compared to the angular dependence of the chromaticity when no translucent coating layer is provided. [Figure 5] This graph shows the difference Δccx of the average values ​​of the ccx coordinates at angles of ±70° for EX1-3 and CX1-3. [Figure 6] This graph shows the brightness of the emitted light when a translucent coating layer is provided, compared to the brightness of the emitted light from a semiconductor light-emitting device without a translucent coating layer. [Figure 7] This is a schematic cross-sectional view showing a semiconductor light-emitting device according to a second embodiment. [Figure 8] This is a schematic cross-sectional view showing a semiconductor light-emitting module according to the third embodiment. [Figure 9] This is a schematic cross-sectional view showing a semiconductor light-emitting module according to the fourth embodiment. [Figure 10A] This is a schematic cross-sectional view showing a semiconductor light-emitting module according to the fifth embodiment. [Figure 10B] This is a schematic plan view of the semiconductor light-emitting device of the fifth embodiment, as seen from above. [Modes for carrying out the invention]

[0011] Preferred embodiments of the present invention will be described below, but these may be modified and combined as appropriate. In the following description and accompanying drawings, substantially identical or equivalent parts will be denoted by the same reference numerals.

[0012] [First Embodiment] FIG. 1 is a cross-sectional view schematically showing a semiconductor light-emitting device 10 according to a first embodiment of the present invention. The semiconductor light-emitting device 10 of the present embodiment includes a semiconductor light-emitting element 11, a phosphor plate 15 which is a wavelength conversion member adhered onto the upper surface of the semiconductor light-emitting element 11 by an adhesive layer 13, and a translucent coating layer 17 provided on the upper surface 15S of the phosphor plate 15.

[0013] The semiconductor light-emitting element 11 is a light-emitting diode (LED) having a blue emission color. Specifically, the semiconductor light-emitting element 11 is an LED having a flip-chip structure with a rectangular parallelepiped shape. On the back surface of the semiconductor light-emitting element 11, a p electrode 12A and an n electrode 12B which are drive electrodes of the semiconductor light-emitting element 11 are provided. Note that an LED having a metal bonding structure instead of a flip-chip structure may be used.

[0014] The phosphor plate 15 is a sheet-sintered phosphor plate in which a phosphor (for example, YAG) is dispersed in an alumina base material. The phosphor plate 15 has a rectangular parallelepiped shape substantially the same size as the semiconductor light-emitting element 11. The phosphor plate 15 converts blue light from the semiconductor light-emitting element 11 into yellow light, and white light is emitted from the upper surface 15S of the phosphor plate 15.

[0015] More specifically, the phosphor plate 15 has a ceramic (alumina: Al2O3) as a base material, the phosphor composition is YAG: Ce, and the particle size of the phosphor is 3 to 5 μm. Also, the phosphor concentration (= phosphor / (phosphor + alumina)) was 20 to 3ο% by weight ratio.

[0016] The phosphor plate 15 is adhered to the semiconductor light-emitting element 11 in close contact by an adhesive layer 13 made of a material transparent to the radiation light from the semiconductor light-emitting element 11. As the adhesive layer 13, for example, an adhesive made of a silicone resin or the like can be used, but is not limited thereto.

[0017] The translucent coating layer 17 on the phosphor plate 15 is a glass coating, has a rectangular film shape, and is formed over the entire upper surface of the phosphor plate 15, that is, extending to the outer edge of the phosphor plate 15. The translucent coating layer 17 is formed by applying a solvent containing quartz (liquid) as the coating agent to the upper surface 15S (light-emitting surface) of the phosphor plate 15 and baking it. The coating agent is applied by spin coating, and the sintering temperature and time are, for example, 500°C and 1 to 10 hours. A volatile solvent such as alcohol can be used as the solvent.

[0018] The translucent coating layer 17 is not limited to quartz. For example, borosilicate glass can also be suitably used.

[0019] Figure 2 schematically shows a cross-section of the interface between the phosphor plate 15 and the translucent coating layer 17. The phosphor plate 15 contains phosphor particles 15P in a ceramic substrate 15C. A translucent coating layer 17 having an average thickness TG is provided on the phosphor plate 15. Here, the average thickness TG is the average value of the thickness of the translucent coating layer 17 in the region where the translucent coating layer 17 is formed. In this embodiment, it is the average value of the thickness of the translucent coating layer 17 in the region where it is formed up to the outer edge of the phosphor plate 15.

[0020] The surface of the phosphor plate 15 had irregularities, and its arithmetic mean surface roughness, Ra, exceeded 0.4 μm. Specifically, it was between 0.4 and 0.5 μm. The surface roughness Ra of the translucent coating layer 17 was between 0.1 and 0.4 μm. In other words, the arithmetic mean surface roughness (Ra) was reduced by providing the translucent coating layer 17. The average thickness TG of the translucent coating layer 17 was between 0.2 and 0.8 μm.

[0021] Figure 3 is a graph showing the increase in luminous flux when a translucent coating layer 17 is provided on the phosphor plate 15, with the case without the translucent coating layer 17 as the baseline (REF). The graph shows the increase in luminous flux for five cases where the average thickness of the translucent coating layer 17 is TG = 0.2 μm to 0.8 μm.

[0022] The translucent coating layer 17 has a refractive index between the refractive index of the phosphor plate 15 and the refractive index of the air layer. Specifically, for the phosphor plate 15, the refractive index of the ceramic (alumina) is 1.77, and the refractive index of the YAG phosphor is 1.82.

[0023] Therefore, if the translucent coating layer 17 is not provided on the phosphor plate 15 (REF in the figure), the light extraction efficiency decreases due to the large difference in refractive index with air. The surface roughness Ra of the phosphor plate 15 at this time was 0.47 μm.

[0024] Furthermore, when the upper surface 15S of the phosphor plate 15 and the surface 17S of the translucent coating layer 17 are flat, the luminous flux decreases compared to when the translucent coating layer 17 is not provided. Specifically, according to a simulation in which the refractive index of the phosphor plate 15 is 1.77 and the refractive index of the translucent coating layer 17 is 1.5, the luminous flux decreases by 13% compared to when the translucent coating layer 17 is not provided (REF).

[0025] On the other hand, the upper surface 17S (light-emitting surface) of the translucent coating layer 17 has a predetermined surface roughness Ra. That is, by having a surface roughness Ra (rough surface) smaller than the wavelength of the emitted light of the surface 17 of the translucent coating layer 17, the refractive index between the translucent coating layer 17 and the air can be continuously changed, thereby improving the light extraction efficiency and increasing the luminous flux.

[0026] As shown in Figure 3, it was found that a luminous flux increase of 0.8 to 11% was obtained when the average layer thickness TG of the translucent coating layer 17 was between 0.2 μm and 0.8 μm. Furthermore, as the average layer thickness TG of the translucent coating layer 17 increased from 0.2 μm to 0.8 μm, the surface roughness Ra of the translucent coating layer 17 decreased from Ra = 0.34 (μm) to Ra = 0.16 (μm).

[0027] In other words, the surface roughness Ra of the translucent coating layer 17 is preferably in the range of 0.1 to 0.4 μm, and more preferably in the range of 0.16 to 0.34 μm.

[0028] The average layer thickness TG of the translucent coating layer 17 is preferably in the range of 0.2 to 0.8 μm. If the average layer thickness TG exceeds 0.8 μm, cracks may occur in the glass after baking, and if it is less than 0.2 μm, there is a possibility that parts of the translucent coating layer 17 will not be formed on the phosphor plate 15 during spin coating.

[0029] According to the semiconductor light-emitting device 10, the luminous flux of the emitted light is large, resulting in low power consumption. Furthermore, when multiple semiconductor light-emitting devices 10 are mounted on a substrate or the like, the number of devices can be reduced, leading to miniaturization and cost reduction.

[0030] Figure 4 shows the angular dependence of the chromaticity of the emitted light from a semiconductor light-emitting device 10 with a translucent coating layer 17, compared to the angular dependence of the chromaticity of the emitted light from a semiconductor light-emitting device without a translucent coating layer 17. The vertical axis represents the x(ccx) coordinate on the CIE chromaticity diagram. Three samples, EX1-3 and CX1-3, are shown. EX1-3 each have a translucent coating layer 17 on the phosphor plate 15, while CX1-3 each do not have a translucent coating layer 17, and the phosphor plate 15 is exposed on the upper surface of the light-emitting device.

[0031] Furthermore, Figure 5 shows the difference Δccx of the average values ​​of the ccx coordinates at angles of ±70° for EX1-3 and CX1-3.

[0032] When the translucent coating layer 17 is provided (EX1-3), the angular dependence of chromaticity and Δccx are improved and color separation is reduced compared to when the translucent coating layer 17 is not provided. Scattering occurs at the interface between the phosphor plate 15 and the translucent coating layer 17, and at the interface between the translucent coating layer 17 and the air layer, improving the angular dependence of chromaticity. Because color separation is reduced, phenomena such as yellowing of the peripheral area (yellow ring) when assembled in a lamp device can be reduced.

[0033] Figure 6 shows the brightness (cd / mm²) of the emitted light from the semiconductor light-emitting device 10 when a translucent coating layer 17 is provided. 2 This is shown by comparing the brightness of the emitted light from a semiconductor light-emitting device that does not have the translucent coating layer 17.

[0034] In the case where the translucent coating layer 17 is provided (EX1-3), the brightness is improved by approximately 3.2% compared to the case where the translucent coating layer 17 is not provided. Note that the increase in brightness is greater than the increase in luminous flux (see Figure 3).

[0035] In other words, by providing the translucent coating layer 17, the angle dependence of chromaticity is reduced, and the light directly above becomes more yellowish, resulting in higher brightness.

[0036] According to the semiconductor light-emitting device 10, the brightness of the emitted light is high, resulting in low power consumption. Furthermore, when multiple semiconductor light-emitting devices 10 are mounted on a substrate or the like, the number of devices can be reduced, leading to miniaturization and cost reduction.

[0037] As described above, this disclosure provides a semiconductor light-emitting device in which luminous flux and brightness are improved and the angle dependence of chromaticity is suppressed.

[0038] [Second Embodiment] Figure 7 is a schematic cross-sectional view showing a semiconductor light-emitting device 30 according to a second embodiment of the present invention. The semiconductor light-emitting device 30 of this embodiment differs from the semiconductor light-emitting device 10 of the first embodiment in that it has a translucent coating layer 31, which is a nanoparticle sintered body, on the upper surface 15S of the phosphor plate 15. The translucent coating layer 31 has a refractive index between the refractive index of the phosphor plate 15 and the refractive index of the air layer.

[0039] More specifically, the translucent coating layer 31 of the semiconductor light-emitting device 30 is a nanoparticle sintered body formed by sintering nano-sized quartz particles (nanoparticles). More precisely, quartz particles with a particle size of 1 to 100 nm were impregnated with a solvent, applied by spin coating onto the upper surface 15S of the phosphor plate 15, and then sintered to form the coating layer. The sintering temperature was 1,000°C to 3,000°C, and the sintering time was approximately 3 hours. The translucent coating layer 31 is formed over the entire upper surface of the phosphor plate 15.

[0040] An ideal anti-reflective film can be constructed by using a translucent coating layer 31 made of nanoparticle sintered material. The anti-reflective effect is achieved by nanoparticles having a particle size that cannot be detected by the excitation light and wavelength-converted light. In other words, by forming the translucent coating layer 31 with a sintered body of nanoparticles having a particle size shorter than the excitation light and wavelength-converted light, an effect is created that continuously changes the refractive index between the air and the phosphor plate 15, improving the light extraction efficiency. For the translucent coating layer 31 made of nanoparticle sintered material, the particle size of the nanoparticles and the diameter of the voids formed in the translucent coating layer 31 by the sintering of the nanoparticles must be shorter than the wavelength of the excitation light.

[0041] On the other hand, the coating material with the lowest refractive index is MgF2, with a refractive index of 1.38. In other words, a nanoparticle sintered body can form a coating layer with a refractive index substantially lower than that of MgF2. Therefore, a nanoparticle sintered body coating layer can form a coating layer with a refractive index intermediate between that of nanoparticles and air, thereby realizing a non-reflective or extremely low-reflective translucent coating layer 31.

[0042] Furthermore, since the nanoparticles fill the unevenness (see Figure 2) caused by the phosphor particles 15P and ceramic 15C on the upper surface 15S of the phosphor plate 15 without any gaps and are sintered, it is possible to prevent the generation of bubbles (voids) at the interface between the phosphor plate 15 and the translucent coating layer 31.

[0043] The translucent coating layer 31 may be either porous or non-porous.

[0044] Therefore, by using the translucent coating layer 31, which is a nanoparticle sintered body coating layer, a semiconductor light-emitting device can be obtained with high light extraction efficiency and improved luminous flux and brightness.

[0045] [Third Embodiment] Figure 8 is a schematic cross-sectional view showing a semiconductor light-emitting module 50 according to a third embodiment of the present invention. The semiconductor light-emitting module 50 includes a module substrate 51, a semiconductor light-emitting device 10 according to the first embodiment housed within the module substrate 51, and a coating resin 55 that covers the side surface of the semiconductor light-emitting device 10.

[0046] More specifically, the module board 51 has a circuit board 51A and a frame 51B erected on the circuit board 51A. The semiconductor light-emitting device 10 is mounted on the circuit board 51A.

[0047] Specifically, p-mount electrodes 53A and n-mount electrodes 53B are provided on the circuit board 51A, and the p-electrode 12A and n-electrode 12B of the semiconductor light-emitting element 11 are joined to the p-mount electrodes 53A and n-mount electrodes 53B, respectively, and are electrically connected.

[0048] The four sides of the semiconductor light-emitting device 10 are covered with a coating resin 55. More specifically, the space between the module substrate 51 and the semiconductor light-emitting device 10 is filled with the coating resin 55, and the coating resin 55 surrounds and covers the sides of the semiconductor light-emitting device 10. The top surface of the semiconductor light-emitting device 10, i.e., the top surface of the translucent coating layer 17, is entirely exposed from the coating resin 55.

[0049] The coating resin 55 can be, for example, a light-reflective resin (so-called white resin) containing particles such as TiO2. Furthermore, the coating resin 55 is not limited to a light-reflective resin; a light-absorbing resin (so-called black resin) can also be used.

[0050] Conventionally, the surface of the phosphor plate 15 has irregularities, and there is a problem that the coating resin creeps up to the surface due to capillary action, making it difficult to form a resin portion that covers the side of the semiconductor light-emitting device. In this embodiment, the surface roughness Ra of the translucent coating layer 17 of the semiconductor light-emitting device 10 is smaller than the surface roughness Ra of the phosphor plate 15, so the coating resin 55 can be formed without creeping up onto the translucent coating layer 17. That is, the inner edge of the surface of the coating resin 55 coincides with the outer edge of the translucent coating layer 17. This makes it possible to suppress the creeping of the coating resin 55 onto the upper surface of the translucent coating layer 17 and the resulting decrease in light extraction efficiency.

[0051] Furthermore, since the surface roughness Ra of the translucent coating layer 17 is low, dust is less likely to adhere to it. In addition, because the surface of the phosphor plate 15 is covered with the translucent coating layer 17, its moisture resistance is improved.

[0052] Although the first embodiment describes the case in which the semiconductor light-emitting device 10 is mounted on the module substrate 51, the second embodiment may also be mounted.

[0053] Furthermore, although the case in which the module board 51 consists of a circuit board 51A and a frame 51B has been described, the circuit board 51A and the frame 51B may be integrally formed to constitute the module board 51. Alternatively, the frame 51B may not be provided. For example, the module board 51 may be a lead frame.

[0054] As described above, the semiconductor light-emitting module 50 provides a semiconductor light-emitting device of the above embodiment with improved luminous flux and brightness, reduced angular dependence of chromaticity, and a semiconductor light-emitting module without the coating resin creeping up onto the upper surface (light-emitting surface) of the semiconductor light-emitting device.

[0055] [Fourth Embodiment] Figure 9 is a schematic cross-sectional view showing a semiconductor light-emitting module 60 according to a fourth embodiment of the present invention. The semiconductor light-emitting module 60 includes a module substrate 51, a plurality of semiconductor light-emitting devices 10 according to the first embodiment, and a coating resin 55 that covers the sides of the plurality of semiconductor light-emitting devices 10.

[0056] Multiple semiconductor light-emitting devices 10 are electrically connected to and mounted on p-mount electrodes and n-mount electrodes (not shown) provided on a circuit board 51A.

[0057] Furthermore, the space between the module substrate 51 and the multiple semiconductor light-emitting devices 10, and between adjacent semiconductor light-emitting devices 10, is filled with coating resin 55, so that the entire sides of the multiple semiconductor light-emitting devices 10 are covered with coating resin 55.

[0058] As described above, the coating resin 55 is a light-reflective resin. Furthermore, the coating resin 55 is formed without creeping up onto the translucent coating layer 17 of each of the multiple semiconductor light-emitting devices 10. In addition, the semiconductor light-emitting device 30 of the second embodiment may be implemented instead of the semiconductor light-emitting device 10.

[0059] The semiconductor light-emitting module 60 of the fourth embodiment has similar advantages to the semiconductor light-emitting module 50 of the third embodiment. The semiconductor light-emitting module 60 provides a semiconductor light-emitting device of the above embodiment with improved luminous flux and brightness, reduced angle dependence of chromaticity, and a semiconductor light-emitting module without the coating resin creeping up onto the upper surface (light-emitting surface) of the semiconductor light-emitting device.

[0060] Furthermore, because the semiconductor light-emitting devices 10 and 30 have a large luminous flux and high brightness, they consume little power. This allows for a reduction in the number of semiconductor light-emitting devices mounted on the semiconductor light-emitting module 60, leading to miniaturization and cost reduction.

[0061] [Fifth Embodiment] Figure 10A is a schematic cross-sectional view showing a semiconductor light-emitting module 70 according to a fifth embodiment of the present invention. The semiconductor light-emitting module 70 includes a module substrate 51, a semiconductor light-emitting device 10P having a plurality of semiconductor light-emitting elements, and a coating resin 55 that covers the sides of the semiconductor light-emitting device 10P.

[0062] Figure 10B is a schematic plan view of the semiconductor light-emitting device 10P as seen from above. In this embodiment, the semiconductor light-emitting device 10P has two semiconductor light-emitting elements 11A and 11B that are rectangular in shape and of the same size.

[0063] The two semiconductor light-emitting elements 11A and 11B are spaced apart from each other and have an aligned positional relationship, and when viewed from above, the semiconductor light-emitting elements 11A and 11B have a rectangular shape. A phosphor plate 15A common to both semiconductor light-emitting elements 11A and 11B is bonded to the upper surface of the semiconductor light-emitting elements 11A and 11B by an adhesive layer (not shown) in a manner that coincides with the overall outer edge of the semiconductor light-emitting elements 11A and 11B.

[0064] A translucent coating layer 17A is provided on the phosphor plate 15A. The translucent coating layer 17A is a glass coating, has a rectangular film shape, and is formed over the entire upper surface of the phosphor plate 15A.

[0065] As shown in Figure 10A, the semiconductor light-emitting elements 11A and 11B are electrically connected to and mounted on p-mount electrodes and n-mount electrodes (not shown) provided on the circuit board 51A.

[0066] Furthermore, the space between the module substrate 51 and the semiconductor light-emitting device 10P, and the space between the semiconductor light-emitting element 11A and the semiconductor light-emitting element 11B are filled with coating resin 55, so that the entire side surface of the semiconductor light-emitting device 10P is covered with coating resin 55.

[0067] The coating resin 55 is formed without creeping up onto the translucent coating layer 17A of the semiconductor light-emitting device 10P. The translucent coating layer 17A can be the same glass coating as the translucent coating layer 17 of the first embodiment. Alternatively, the same nanoparticle sintered coating layer as the translucent coating layer 31 of the second embodiment can be used.

[0068] Furthermore, although the case in which the semiconductor light-emitting device 10P has two semiconductor light-emitting elements 11A and 11B of the same size has been described, it is sufficient to have multiple semiconductor light-emitting elements and a common phosphor plate of a size and shape that matches the outer edge of the entire upper surface of the multiple semiconductor light-emitting elements. In this case, the multiple semiconductor light-emitting elements do not necessarily have to be of the same size.

[0069] The semiconductor light-emitting module 70 of the fifth embodiment has the same advantages as the semiconductor light-emitting modules 50 and 60 of the third and fourth embodiments. In addition, since a common phosphor plate is provided for multiple semiconductor light-emitting elements, it is possible to provide a semiconductor light-emitting module with even smaller angular dependence of chromaticity, a larger luminous flux, and higher brightness.

[0070] It should be noted that the present invention is not limited to the embodiments described above, and can be modified and applied without departing from the scope of this disclosure.

[0071] For example, the above-described embodiment of the semiconductor light-emitting device has a rectangular shape, but it is not limited to this. For example, it may have a cylindrical shape, an elliptical shape, or the like. [Explanation of Symbols]

[0072] 10,10P,30: Semiconductor light-emitting device 11, 11A, 11B: Semiconductor light-emitting element 12A:p electrode 12B:n electrode 13: Adhesive layer 15,15A: Phosphor plate 15C: Ceramic 15P: Phosphorescent particles 17,17A,31: Transparent coating layer 50, 60, 70: Semiconductor light-emitting modules 51: Module board 51A: Circuit board 51B:Frame body 53A, 53B: Mounted electrodes 55: Coating resin

Claims

1. Semiconductor light-emitting element and A wavelength conversion member bonded to the upper surface of the semiconductor light-emitting element by a translucent adhesive layer, The wavelength conversion member has a translucent coating layer provided on its upper surface, having a refractive index between the refractive index of the wavelength conversion member and the refractive index of the air layer, The aforementioned translucent coating layer is either a glass coating layer having a surface roughness in the range of 0.1 to 0.4 μm, or a nanoparticle sintered coating layer, in a semiconductor light-emitting device.

2. The semiconductor light-emitting apparatus according to claim 1, wherein the wavelength conversion member is a phosphor plate made of ceramic containing phosphor particles, and the phosphor plate has a surface roughness of 0.4 μm or more.

3. The semiconductor light-emitting apparatus according to claim 1, wherein the glass coating layer is made of quartz or borosilicate glass.

4. The semiconductor light-emitting apparatus according to claim 1, wherein the average thickness of the glass coating layer is in the range of 0.2 to 0.8 μm.

5. The aforementioned nanoparticle sintered body coating layer is MgF ２ A semiconductor light-emitting device according to claim 1, having a refractive index lower than that of the semiconductor light-emitting device.

6. Having a plurality of the aforementioned semiconductor light-emitting elements, The wavelength conversion member is bonded to the upper surface of the plurality of semiconductor light-emitting elements in a manner that matches the overall outer edge of the plurality of semiconductor light-emitting elements. The semiconductor light-emitting apparatus according to claim 1.

7. A semiconductor light-emitting apparatus according to any one of claims 1 to 6, A circuit board on which the aforementioned semiconductor light-emitting device is mounted, A covering resin that covers the entire side surface of the semiconductor light-emitting device while exposing the entire upper surface of the semiconductor light-emitting device, A semiconductor light-emitting module having [a certain feature].

8. The semiconductor light-emitting module according to claim 7, wherein a plurality of the semiconductor light-emitting devices are mounted on the circuit board.

9. The semiconductor light-emitting module according to claim 7, wherein the circuit board includes a frame erected on the circuit board, and the coating resin fills the space between the semiconductor light-emitting device and the frame.

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