Method for manufacturing electronic devices and optical inspection system

Abstract

This invention provides an optical inspection system and a method for manufacturing electronic devices that can determine the risk of potential microcracks and other defects in the internally modified regions of a transparent substrate. [Solution] A method for manufacturing an electronic device includes: preparing a substrate; performing a first modification step on at least a portion of the substrate; generating a first lateral incident light and introducing the first lateral incident light into the interior of the substrate; inspecting the substrate after the first modification step to obtain detection information regarding the state of the substrate; and determining whether a reprocessing process is necessary based on the detection information.

Description

Technical Field

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 737,800, filed on December 23, 2024. The content of this application is incorporated herein by reference.

[0002] The present invention relates to a method for manufacturing an electronic device and an optical inspection system, and particularly to a method for manufacturing an electronic device that supports a transparent substrate and an optical inspection system.

Background Art

[0003] Laser modification technology is commonly used to form glass through vias (TGVs) on a glass substrate. Since the quality of this process is related to the reliability of subsequent processes and the final product, strict inspection is required. To determine the risk of potential microcracks and other defects in the internal modification region of a transparent substrate, it may not be sufficient to rely solely on automatic optical inspection (AOI) from the top surface to observe the surface shape. Therefore, providing an efficient inspection method for transparent substrates is an issue to be addressed.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Patent Document 6

Patent Document 7

Patent Document 8

[0005] In one embodiment, a method for manufacturing an electronic device is disclosed. This method includes preparing a substrate, performing a first modification step on at least a portion of the substrate, generating a first lateral incident light and introducing the first lateral incident light into the interior of the substrate, inspecting the substrate after the first modification step to obtain detection information regarding the condition of the substrate, and determining, based on the detection information, whether a reprocessing process for the substrate is necessary.

[0006] In another embodiment, an optical inspection system is disclosed. The optical inspection system includes a measurement object, a first light source disposed on the side of the measurement object and configured to provide first lateral incident light, and a lens disposed above the measurement object. After a first modification step is performed on at least a part of the measurement object, the first light source generates the first lateral incident light and introduces the first lateral incident light into the measurement object. The lens inspects an image of the measurement object after the first modification step. The image is formed on a photosensitive element to obtain detection information regarding the state of the measurement object. The detection information is used to determine whether a reprocessing process is required for the measurement object.

[0007] These and other objects of the present disclosure will become clearly apparent to those skilled in the art after reading the following detailed description of the embodiments shown in various drawings.

Brief Description of the Drawings

[0008] [Figure 1] It is a flowchart of a method for manufacturing an electronic device according to an embodiment of the present disclosure. [Figure 2] It is a schematic diagram showing a laser modification step in the method for manufacturing the electronic device of FIG. 1. [Figure 3] It is a schematic diagram showing an etching step in the method for manufacturing the electronic device of FIG. 1. [Figure 4] It is a schematic diagram showing detection of the outline of a laser modification region using the first lateral incident light and scratches on a substrate in the method for manufacturing the electronic device of FIG. 1. [Figure 5] It is a schematic diagram showing detection of a through-hole region using the first lateral incident light and defects on a substrate in the method for manufacturing the electronic device of FIG. 1. [Figure 6] It is a block diagram of an optical inspection system according to a first embodiment of the present disclosure. [Figure 7] It is a block diagram of an optical inspection system according to a second embodiment of the present disclosure. [Figure 8]This is a block diagram of an optical inspection system according to a third embodiment of the present disclosure. [Figure 9] This is a structural diagram of an electronic device according to one embodiment of the present disclosure. [Figure 10] This is a structural diagram of an electronic device according to another embodiment of the present disclosure. [Modes for carrying out the invention]

[0009] This disclosure can be understood by referring to the following detailed description and accompanying drawings. For the convenience of the reader and for the simplification of the drawings, some of the drawings in this disclosure show only a portion of the electronic device, and certain components in the drawings are not depicted to actual scale. Furthermore, the quantities and dimensions of each component in the drawings are for illustrative purposes only and do not limit the scope of this disclosure.

[0010] Throughout the specification and claims of this disclosure, specific terms are used to refer to certain components. Those skilled in the art should understand that manufacturers of electronic devices may use different names for the same component. This document is not intended to distinguish components that have the same function but different names.

[0011] In the following specification and claims, terms such as “includes,” “contains,” “has,” and “possesses” are not limiting terms and should therefore be interpreted as “includes, but not limited to.” Accordingly, where terms such as “includes,” “contains,” and / or “possesses” are used in the description of this disclosure, they identify the presence of corresponding features, areas, steps, operations, and / or components, and do not exclude the presence of one or more other corresponding features, areas, steps, operations, and / or components.

[0012] The directional terms such as “up,” “down,” “front,” “back,” “left,” and “right” used herein are solely for the purpose of indicating the orientation of the drawings. Therefore, the directional terms used are for illustrative purposes only and are not intended to limit this disclosure. In the drawings, each figure illustrates the general characteristics of the methods, structures, and / or materials used in a particular embodiment. However, these drawings should not be construed as defining or limiting the scope or properties covered by these embodiments. For example, the relative dimensions, thicknesses, and locations of various layers, areas, and / or structures may be reduced or exaggerated for clarity.

[0013] When a corresponding component (e.g., a layer or region) is described as being "on top" of another component, that component may be directly above the other component, or there may be an intervening component. On the other hand, when a component is described as being "directly above" another component, there is no intervening component. Furthermore, when one component is described as being "on top" of another, there is a vertical relationship between the two components, and that component may be positioned above or below the other component, and this vertical relationship depends on the orientation of the device.

[0014] Furthermore, when one component or layer is described as being "connected" to another component or layer, that component or layer may be directly connected to that other component or layer, or there may be an intervening component or layer. When one component is described as being "directly connected" to another component or layer, there is no intervening component or layer. Additionally, when one component is described as being "combined with another component (or a variation thereof)," it may be directly electrically connected to the other component, or it may be indirectly connected to the other component through one or more components (for example, indirectly electrically connected).

[0015] In this disclosure, when one component is "disconnected" from another component, it becomes impossible for an electrical signal to flow between the two components within a specified time.

[0016] The terms "approximately" or "about" are usually interpreted as being within ±10% of a given value, or within ±5%, ±3%, ±2%, ±1%, or ±0.5% of a given value.

[0017] The ordinal numbers such as "first," "second," etc., used to modify components in the specification and claims do not imply or indicate that a component has a preceding ordinal number, nor do they represent the order of one component relative to another, or the order in a manufacturing method. These ordinal numbers are used solely to clearly distinguish a component with a specific name from another component with the same name. Claims and specifications do not use the same terminology. Therefore, a first component in the specification may be a second component in a claim.

[0018] The features of the various embodiments described below can be substituted, recombined, and mixed to form other embodiments without departing from the spirit of this disclosure. Features between embodiments can be mixed and combined as they see fit, as long as they do not contradict the spirit of the invention or conflict with each other.

[0019] In this disclosure, electronic devices may include, but are not limited to, power modules, semiconductor devices, display devices, light-emitting devices, antenna devices, sensing devices, medical devices, connection devices, or any combination thereof. Display devices may be non-self-emissive displays or self-emissive displays, as required. Antenna devices may be liquid crystal antenna devices or non-liquid crystal antenna devices. Sensing devices may be sensing devices that detect capacitance, light, thermal energy, or ultrasound. Medical devices may be medical detection devices. Connection devices may be, but are not limited to, display connection devices or antenna connection devices. Electronic devices may include electronic components, which may include passive and active components such as capacitors, resistors, inductors, diodes, electrowetting elements, switching elements, dies, chips, and high-bandwidth memory (HBM), and may refer to electronic components that include semiconductor layers or are manufactured by semiconductor processes. Diodes may be dies or chips and may include, but are not limited to, light-emitting diodes (LEDs), photodiodes, or varactors. The switching element can be a transistor, which may include, but is not limited to, a top-gate thin-film transistor, a bottom-gate thin-film transistor, or a dual-gate thin-film transistor. The electronic device may have peripheral systems such as drive systems, control systems, and light source systems to support the components within the electronic device.

[0020] The technical features of the different embodiments described below can be substituted, recombined, and mixed with each other to form other embodiments without departing from the spirit of this disclosure.

[0021] Figure 1 is a flowchart of a method for manufacturing an electronic device according to one embodiment of the present invention. The method for manufacturing an electronic device disclosed in this embodiment further improves the detection of the substrate condition before and after internal modification by using side-incident light technology. By performing real-time non-destructive internal and surface inspections before etching, and combining these inspections with artificial intelligence algorithms for precise analysis and comparison, multiple defects such as scratches, cracks, roughness, and pitch between through-holes can be effectively identified. The method of this embodiment not only allows for real-time determination of whether rework is necessary, but also allows for adjustment of laser parameters accordingly, thereby significantly improving yield and efficiency. Therefore, this method can be widely applied to quality monitoring in high-precision laser microfabrication processes for transparent substrates such as glass through-vias (TGVs), tip packaging, and display panels, and provides a more reliable and cost-effective solution, especially in the processing of transparent substrates such as glass. As shown in Figure 1, the flow of the method for manufacturing an electronic device may include steps S101 to S109. Any reasonable technical changes or hardware replacements are included within the scope of this disclosure. Steps S101 to S109 are described as follows: Step S101: Prepare the circuit board; Step S102: Perform laser modification; Step S103: Inspect the substrate using the optical inspection system; Step S104: A comparison is made using a graphics processing unit (GPU) server, rule-based and artificial intelligence (AI) algorithms to determine whether the laser modification is acceptable. If it is acceptable, proceed to step S105; otherwise, proceed to step S107. Step S105: Perform glass etching; Step S106: After glass etching, the substrate is inspected, and the photosensitive element data is re-entered into the processing unit to verify the similarity of the etching; Step S107: Add a manual review mechanism to re-evaluate whether the laser modification is acceptable. If it is acceptable, proceed to step S105 for glass etching; otherwise, proceed to step S108. Step S108: Determine whether the substrate can undergo a reprocessing process. If yes, return to step S102, which indicates a defect in the laser modification and the substrate undergoes additional processing; otherwise, proceed to step S109. Step S109: Laser modification fails, the substrate cannot be repaired, and it is discarded.

[0022] In step S101, the substrate to be processed can be prepared. The substrate can be a glass substrate, a sapphire substrate, a quartz substrate, a silicon substrate, or other transparent or translucent substrate suitable for semiconductor or display processes. In this embodiment, a glass substrate is a preferred example. The dimensions and thickness of the substrate can be determined based on actual product requirements. In some embodiments, a protective layer (described below) can be placed on one side of the substrate (e.g., the side opposite to the laser incidence side) before the subsequent laser modification. The protective layer can be adhesive tape, another piece of glass, a printed circuit board (PCB), bismaleimide triazine (BT) material, or FR-4 (flame retardant resin 4), and the main purpose of the protective layer is to protect the substrate surface during the laser modification process, reduce debris generation, or help absorb laser energy. Furthermore, depending on process requirements, a step of thinning the substrate may be performed at or before this stage in order to prepare the substrate for sending to a processing or inspection device.

[0023] In step S102, a first modification step can be performed on at least a portion of the substrate. In this embodiment, the first modification step can be laser modification. Laser modification involves irradiating specific areas of the substrate with a laser beam emitted from a laser light source, changing the material properties of these areas, and forming multiple laser-modified regions. These laser-modified regions are typically used to pre-define paths for subsequent etching steps and to facilitate removal of the laser-modified regions by the etching solution.

[0024] After the laser modification in step S102 is completed and before etching in step S105 is performed, the optical inspection system proposed in this invention can perform a non-destructive optical inspection of the substrate according to step S103. This step is one of the important steps of this invention, and its purpose is to evaluate the quality of the laser modification in real time. The principle of step S103 is to use side-incident light to explore the inside of the substrate (especially transparent or translucent substrates) and obtain condition information of the laser-modified area and the entire substrate. Furthermore, to obtain richer information, a second side-incident light can also be provided from another side of the substrate.

[0025] As the initial side-incident light propagates through the substrate, its optical properties (intensity, direction, phase, etc.) are altered by interactions with the laser-modified region (scattering, refraction, reflection, absorption, etc.) and, in some cases, by pre-existing defects (scratch, crack, minute pimples, dimples, etc.), resulting in discernible optical changes. Furthermore, the contours and dimensions of the laser-modified region (inner and outer apertures, etc.) also affect the outcome of light propagation.

[0026] The system captures the output light after interaction via a lens and camera (which may include a photosensitive element) from above the substrate or another suitable location, and converts the output light into an image (hereinafter referred to as "photosensitive element imaging data"). The photosensitive element imaging data contains rich detection information about the state of the substrate. To achieve comprehensive inspection, this inspection step can be designed to be performed sequentially on multiple areas of the substrate, thereby facilitating subsequent comprehensive evaluation (such as the generation of an inspection map). Further details will be provided later.

[0027] In step S104, the method for manufacturing an electronic device can perform comparisons using a GPU server, rule-based algorithms, and AI algorithms to determine whether the laser modification is acceptable. In this step, the acquired detection information (i.e., photosensitive element imaging data) is transmitted to a processing unit (in this disclosure, any computing mechanism such as a GPU server, cloud processor, or AI accelerator may be collectively referred to as a processing unit). The processing unit can read pre-stored rule-based or reference laser pattern data from memory. Next, the processing unit can execute an AI algorithm. The AI ​​algorithm performs a detailed analysis and comparison of the received detection information. For example, this analysis includes, but is not limited to, (a) comparing real-time images with reference laser pattern data to determine whether the morphology of the modified area is as expected; (b) detecting whether there are scratches or cracks on the substrate; (c) evaluating the surface roughness of the substrate; and (d) measuring the pitch between two adjacent through-hole areas to determine whether the pitch conforms to a preset standard. Based on the comparison and analysis results of the AI ​​algorithm, the processing unit determines whether the current laser modification is acceptable. If the result is "pass," the flow proceeds to step S105; if the result is "fail," the flow proceeds to step S107.

[0028] In step S105, if the substrate passes the AI ​​evaluation and it is indicated that the laser modification quality meets the requirements, the subsequent process can be executed. In this embodiment, the subsequent process is a glass etching step. If a protective layer has already been formed before this step, it is necessary to first perform a step to remove the protective layer. Next, the substrate is etched using an etching solution (wet or dry). Because the material properties of the laser-modified areas have changed, the etching solution preferentially etches along these areas, ultimately forming the required through-holes.

[0029] After etching is complete, in step S106, the substrate is inspected again as needed. The purpose of this inspection is to confirm that through-holes are properly formed, that openings meet specifications, and that no new defects have been introduced during the etching process. This step also includes re-entering the photosensitive element data into the processing unit for comparison and similarity matching of the etched morphology, as a final quality check.

[0030] If the AI ​​algorithm determines in step S104 that the laser modification is "failure," the flow proceeds to step S107. To avoid AI misjudgments or to address edge cases, a manual review mechanism is introduced in step S107. An operator or engineer reviews the substrate that failed the AI ​​judgment and the associated detection information (images, AI analysis data, etc.) and makes a re-judgment based on experience and criteria. If the manual re-judgment reveals that the substrate quality is actually within acceptable limits, or that the AI ​​judgment was too strict or inaccurate, the judgment can be corrected to "pass," and the flow proceeds to step S105 for etching. If the manual re-judgment confirms that there is indeed a problem with the laser modification, the judgment remains "failure," and the flow proceeds to step S108.

[0031] If the substrate is found to be unacceptable in step S107, step S108 determines whether the defect can be repaired by a reworking process. This depends on the type and severity of the defect and the feasibility of the process. If the result is "yes" (reworkable), it indicates that the laser modification parameters were slightly off, or there may have been a localized defect or mis-shot, and that additional processing or other modifications can be performed. At this point, the flow returns to step S102 and performs the "laser re-modification step". It is understood that the first modification step is performed using first laser conditions. The laser re-modification step is performed using second laser conditions. Furthermore, the second laser conditions may differ from the first laser conditions. For example, the first laser conditions include a femtosecond laser, a wavelength of 1030 nanometers (nm), a pulse energy of 1.5 microjoules (μJ), a repetition frequency of 500 kilohertz (kHz), and a scanning speed of 250 millimeters / second (mm / s), employing, but not limited to, high-speed dot matrix scanning or large-area spiral scanning. The first laser conditions are designed to maximize production efficiency while maintaining a certain level of quality.

[0032] After inspection, the system may detect, among the multiple modified spots, spots with insufficient modification depth due to slight non-uniformity of the substrate material or instantaneous fluctuations in laser power, or spots that are "missed shots" because the laser beam was obstructed by minute dust particles. These are determined to be "defects in laser modification" and are deemed reprocessable in step S108. Therefore, the second laser condition can be set to include, but is not limited to, a femtosecond laser with a wavelength of 1030 nm. For spots with insufficient depth, the pulse energy can be reduced to 0.8 μJ while increasing the number of pulses applied to the spot (e.g., reducing the scanning speed or repeatedly irradiating the spot) to more precisely control the energy application, deepen the modification layer by layer, and avoid over-modification. For "missed shots," the same pulse energy as the first laser condition (1.5 μJ) can be used, but only that single spot is irradiated. The repetition frequency can be maintained at 500 kHz or adjusted according to the required number of pulses. For spots requiring reinforcement, the scanning speed is significantly reduced, or precise single-spot dwell irradiation is used instead. Furthermore, the scanning method is no longer large-area scanning, but rather high-precision point-to-point positioning and target irradiation. In other words, when performing laser re-modification, defects can be corrected using a "second laser condition" different from the first laser condition, for example, by adjusting the laser parameters. If the determination is "no" (re-modification is not possible), the flow proceeds to step S109.

[0033] If, in step S109, it is determined that the defects in the substrate cannot be repaired by rework, this indicates that the current laser modification has failed. To avoid wasting resources in subsequent processes, the substrate is considered waste and removed from the production line.

[0034] Figure 2 is a schematic diagram showing the laser modification step in the manufacturing method of an electronic device. Figure 3 is a schematic diagram showing the etching step in the manufacturing method of an electronic device. Details of the manufacturing steps of glass through vias (TGVs), including the pretreatment step, are described below so that those skilled in the art can easily understand the disclosure. First, substrate loading (substrate-in) is performed. This step corresponds to step S101 described above, and the substrate to be processed is prepared. The substrate is typically a transparent or translucent material such as glass. Next, this embodiment further includes providing a protective layer on the sides of the substrate before performing the main laser modification step. The main purpose of providing the protective layer is to reduce defects that may occur in subsequent processes. The protective layer can be bonded or coated onto the top or side of the substrate. In some embodiments, the protective layer can be omitted.

[0035] Next, a substrate thinning step is performed. In some embodiments, a thinning process may be performed on the substrate 10 after the protective layer 20 has been applied, or as part of the pretreatment of the substrate 10. The purpose of the thinning process is to adjust the substrate 10 to a specific thickness required for the final product. The thinning process can be carried out by grinding, polishing, or chemical etching in preparation for subsequent laser modification. Next, a laser modification step is performed. Referring to Figure 2, the laser modification step corresponds to the first modification step described in the previous flowchart S102. In this stage, the substrate 10 covered with the protective layer 20 can be irradiated with a laser light source to form a laser-modified region 10a within the substrate 10. The protective layer 20 protects the surface of the substrate 10 from thermal damage and debris contamination caused by direct laser irradiation in this step, and can suppress the occurrence of surface defects. The laser beam penetrates the substrate 10 and forms the desired laser-modified region 10a. The laser-modified region 10a becomes a predetermined path for forming through holes by subsequent etching.

[0036] Next, a step to remove the protective layer is performed. After the laser modification step is completed, it is necessary to remove the protective layer 20 that has covered the substrate 10. The removal method can be determined according to the material properties of the protective layer 20. For example, removal can be carried out by ultraviolet (UV) irradiation, heating, or other suitable method. Once the protective layer 20 is removed from the substrate 10, the laser-modified substrate 10 and the laser-modified region 10a inside the substrate 10 are exposed. The step of removing the protective layer allows the subsequent etching process to act directly on the laser-modified region 10a. Next, an etching step is performed to form through holes. Referring to Figure 3, after the protective layer 20 has been removed, an etching step is performed on the substrate 10. This step corresponds to step S105 described in the previous flowchart. Using a suitable etching solution (wet or dry), the laser-modified region 10a is selectively removed to form through holes 10b in the substrate 10. Because the material properties of the laser-modified region 10a are altered, its etching rate is much higher than that of the unmodified substrate material, allowing for the precise formation of through-holes 10b with a desired aspect ratio.

[0037] During the processing of a glass substrate, especially without adequate protection, multiple surface defects may occur. The protective layer 20 of this embodiment helps to suppress the occurrence of these defects. However, these defects may include bubbles, dimples, pimples, and scratches. Bubbles may be caused by gases generated within the material or by gases adhering to the surface during the process. Dimples are small indentations on the substrate surface. Pimples are small protrusions on the substrate surface. Scratches are linear damage to the substrate surface caused by mechanical action. The inspection system and method of this disclosure can detect these and other internal defects before etching and determine whether reprocessing is necessary.

[0038] Figure 4 is a schematic diagram showing the detection of the contour of a laser-modified region 10a and scratches on the substrate using a first side-incident light E1 in a method for manufacturing an electronic device. Figure 4 illustrates part of the principle by which the inspection system acquires detection information regarding the condition of the substrate in step S103. As shown in Figure 4, when the first side-incident light E1 is introduced into the interior of the substrate 10 from the side of the substrate 10, the light propagates inside the substrate 10. If scratches are present on or inside the substrate 10, the propagation path of the first side-incident light E1 changes significantly when it encounters the scratches. Due to the rough surface or cross-sectional shape of the scratches, some of the light may be scattered. For example, scattered light paths L1 and L2 are schematically shown in Figure 4. The scattered light may exit the substrate upward or in other directions and be captured by a photosensitive element in a lens 12 positioned above the substrate. Other parts of the light may not be transmitted along the expected path or their intensity may be attenuated due to shielding or refraction by the scratches.

[0039] Furthermore, since the material properties of the laser-modified region 10a itself are altered by the laser, its optical properties (refractive index, absorptivity, etc.) differ from those of the surrounding unmodified substrate material. Therefore, when the first lateral incident light E1 is incident on the boundary or interior of the laser-modified region 10a, refraction, reflection, or scattering also occurs. This enhances the contour of the laser-modified region 10a. The enlarged view on the right side of Figure 4 schematically shows the contour of the modified region, whose edges may form a specific optical contrast, facilitating identification and measurement by the inspection system. By analyzing the distribution, intensity changes, or specific patterns formed by the light received by the photosensitive element, the processing unit 70 (shown in Figures 6 to 8, but not in Figure 4) can determine whether scratches are present, their location, and their approximate severity, and can also evaluate whether the contour of the laser-modified region 10a is as expected.

[0040] Figure 5 is a schematic diagram illustrating the detection of through-hole regions and defects on a substrate using first side-incident light in a method for manufacturing electronic devices. Figure 5 further illustrates in detail how the inspection system acquires detection information regarding the state of the substrate 10 in step S103. As shown in Figure 5, after the first side-incident light E1 is introduced into the substrate 10 from the side, the propagation of the first side-incident light E1 is affected by various features and defects on the substrate 10. Figure 5 schematically illustrates several situations. For example, if a crack exists on the substrate 10, when the first side-incident light E1 encounters the crack, its optical path is blocked, scattered, or refracted, forming detectable optical features. If there are minute surface morphological changes, such as pimples or dimples, on the substrate 10, even at the micrometer level, these changes cause disturbances to the first side-incident light E1, for example, by generating specific scattering patterns or shadow effects.

[0041] The through-holes 10b formed by etching, or the laser-modified regions formed after laser modification, have optical properties that differ from the surrounding substrate material due to their boundaries and internal structure. Therefore, when the first side-incident light E1 passes through or bypasses these regions, its light intensity and optical path change. The enlarged view on the right side of Figure 5 shows the inner opening (W), which is an important parameter for evaluating the quality of the through-holes or modified regions by utilizing this optical change. small ) and the outer opening (W largeThis schematically illustrates a method for measuring the through-holes. Similar to the principle in Figure 4, some of the light may be scattered above the substrate 10 by these defects or features and captured by the photosensitive element of the lens 12. By analyzing these optical changes, the processing unit 70 (shown in Figures 6 to 8, but not in Figure 5) can not only identify and locate defects such as cracks, pimples, and dimples, but also measure the main dimensions of the through-hole regions to determine whether the main dimensions conform to process specifications. Furthermore, the inspection method described in this embodiment can be used not only to evaluate the dimensions of a single through-hole region but also to measure the pitch between multiple adjacent through-hole regions. The processing unit can identify the center position or edge contour of each of the multiple through-hole regions 10b (or laser-modified regions 10a) through the first side-incident light E1 and the overall image acquired by the lens 12, which may contain multiple feature points. The processing unit can then calculate the relative distance between these located feature points to accurately obtain the pitch value between the feature points and compare this measurement to a preset design criterion to determine whether the pitch conforms to specifications.

[0042] Figure 6 is a block diagram of an optical inspection system 100 according to a first embodiment of the present disclosure. As shown in Figure 6, the optical inspection system 100 includes at least one first light source 11 positioned to the side of the substrate 10. In this disclosure, the substrate 10 can be considered as a specific example of a "transparent object to be measured". Therefore, the measurement of the substrate 10 by the optical inspection system 100 may generally be referred to as the measurement of any transparent object to be measured that satisfies certain conditions. In one embodiment, a "transparent object to be measured" can be defined as a material that is a medium with a white light transmittance of more than 75%. For convenience of the following explanation, the substrate 10 will continue to be described as a typical transparent object to be measured in the following embodiments.

[0043] In this embodiment, the first light source 11 can be an LED light bar. The LED light bar can include multiple LEDs of different colors, such as red, green, and blue LEDs. By adjusting the intensity ratio of each color of the LEDs, a mixture of light source colors can be performed to generate a first side-incident light E1 with optimal transmittance or contrast depending on the material properties of the substrate 10 and the type of defect to be detected. The wavelength of the first side-incident light E1 generated by the first light source 11 is selectable, for example, the wavelength range of the first side-incident light E1 can be from 360 nanometers to 830 nanometers. Furthermore, the height of the first light source 11 along the normal direction of the substrate 10 (Z direction shown in Figure 6) is adjustable and can be fine-tuned within a range of 0 to 2 millimeters to optimize the angle and position of the light introduced onto the substrate 10. To ensure inspection stability and avoid direct contact between the substrate 10 and the fixture, the height of the exposed edge of the fixture on which the substrate 10 is mounted is at least 1 centimeter. Furthermore, as shown in Figure 6, the optical inspection system 100 may optionally include a second light source 11 that provides illumination from another side of the substrate 10 in order to achieve a more comprehensive inspection.

[0044] The optical inspection system 100 may further include a lens 12 and a camera 30 (including a photosensitive element) positioned above the substrate 10 or at other suitable light-receiving locations. The lens 12 is for focusing output light E2 emitted or reflected from the inside or surface of the substrate 10 to form an image. The optical inspection system 100 further includes a processing unit 70 and a memory 80. The processing unit 70 is coupled to the camera 30 and the memory 80. During operation, after a first lateral incident light E1 generated by a first light source 11 is introduced into the substrate 10, the first lateral incident light E1 interacts with the laser-modified region 10a or any defects present inside the substrate 10. In this disclosure, the lateral incident light is perpendicular to the Z direction. Because the refractive index of the laser-modified region or defect differs from that of the substrate 10 body, or due to scattering or absorption of light by the defect, a discernible change occurs in the optical properties (intensity, distribution pattern, etc.) of the output light E2. Therefore, after the photosensitive element captures an image formed by the output light E2, it can transmit the detection information represented by the image to the processing unit 70. The processing unit 70 then analyzes the detection information by executing a rule-based or artificial intelligence algorithm stored in the memory 80 to determine whether there is an abnormality in the quality of the laser-modified area 10a or the substrate 10, that is, whether the laser modification has passed inspection.

[0045] Figure 7 is a block diagram of an optical inspection system 200 according to a second embodiment of the present disclosure. As shown in Figure 7, the optical inspection system 200 also includes at least one first light source 11. In this embodiment, the first light source 11 can be a light-emitting diode (LED) light bar having similar characteristics to the embodiment in Figure 6 described above. For example, the LED light bar includes multiple light-emitting diodes of different colors such as red, green, and blue, and by adjusting the intensity ratio of each color of the light-emitting diodes, a mixture of light source colors can be performed to generate an optimized first side-incident light E1 depending on the material properties of the substrate 10 and the type of defect to be detected. The wavelength of the first side-incident light E1 is also selectable, for example, the wavelength range can be from 360 nanometers to 830 nanometers.

[0046] Unlike the optical inspection system 100, the optical inspection system 200 has a collimating lens 40 and an optical grating structure 50 arranged in sequence along the optical path between the first light source 11 and the substrate 10. The collimating lens 40 collimates the light emitted from the first light source 11, making it parallel light or a ray with a specific divergence angle, thereby ensuring uniformity and stability of the light illuminating the side edge of the substrate 10. The optical grating structure 50, located downstream of the collimating lens 40, is for further adjusting or shaping the light pattern or spot characteristics of the first side incident light E1. For example, the optical grating structure 50 can generate a point-like spot (circular), a one-dimensional linear spot, or a two-dimensional planar spot. This is beneficial for detecting certain types of defects and improving the efficiency of scanning inspections. The optical inspection system 200 also includes a lens 12, a camera 30 (including a photosensitive element), a processing unit 70, and a memory 80. The functions of these components are similar to those of the optical inspection system 100 in the embodiment of Figure 6, and are used for capturing output light E2, forming images, and performing analysis and determination by AI algorithms. Similarly, the height of the first light source 11 (LED light bar) along the normal direction of the substrate 10 (Z direction shown in Figure 7) is adjustable, and the height can be finely adjusted in the range of 0 to 2 millimeters to optimize the angle and position of the light introduced onto the substrate 10, for example. To ensure inspection stability and avoid direct contact between the substrate 10 and the fixture, the height of the exposed end of the fixture on which the substrate 10 is mounted is greater than at least 1 centimeter. Furthermore, as shown in Figure 7, the optical inspection system 200 may optionally include a second light source 11 that provides illumination from another side of the substrate 10 to achieve a more comprehensive inspection.

[0047] To comprehensively inspect the entire substrate 10 or multiple laser-modified regions 10a on it, the optical inspection system 200 can be configured with a scanning mechanism. For example, in some embodiments, if the light spot formed by optical components such as an optical grating structure 50 is dot-shaped (circular), the first light source 11 (and associated optical components such as the collimating lens 40 and the optical grating structure 50) can be designed to perform a moving scan along one direction (e.g., the Y-axis direction) of the substrate 10, while the camera 30 and its lens 12 perform a synchronous moving scan along another orthogonal direction (e.g., the X-axis direction) of the substrate 10. Alternatively, the light source and camera can be fixed, and the substrate 10 can be transported by a moving platform to perform a two-dimensional scan in the XY plane. In this way, all target regions on the substrate 10 can be inspected sequentially, and detection information for each region can be transmitted to a processing unit to generate an overall inspection map. The detection principle in Figure 7 utilizes a formed first lateral incident light E1 that interacts with the internal structure and defects of the substrate to generate analyzable output light E2, and is similar to the embodiments described above, so details will not be repeated here.

[0048] Figure 8 is a block diagram of an optical inspection system 300 according to a third embodiment of the present disclosure. As shown in Figure 8, the optical inspection system 300 comprises at least one first light source 11, which in this embodiment is a laser light source. Compared to a light-emitting diode light bar, the laser light source can provide a light beam with higher intensity, better directivity, and better monochromaticity. The wavelength of the first side-incident light E1 produced by the laser light source is also selectable and can range, for example, from 360 nanometers to 830 nanometers to suit the different material properties and inspection requirements of the substrate 10. Similar to the embodiments described above, the height of the first light source 11 along the normal direction (Z direction) of the substrate 10 can also be adjusted, for example, in the range of 0 to 2 millimeters to optimize the light introduction angle. Furthermore, the height of the exposed end of the fixture on which the substrate 10 is mounted is at least 1 centimeter to avoid unwanted contact. Furthermore, as shown in Figure 8, the optical inspection system 300 may optionally include a second light source 111 that provides illumination from another side of the substrate 10 to achieve a more comprehensive inspection.

[0049] The optical inspection system 300 has optical components, including a beam expander 60, a collimating lens 40, and an optical grating structure 50, arranged in sequence along the optical path between the first light source 11 (laser light source) and the substrate 10. First, the beam expander 60 expands the original laser beam emitted from the laser light source 11 and adjusts it to a beam diameter suitable for subsequent optical component processing and meeting specific illumination area requirements. Next, the expanded beam is incident on the collimating lens 40 and collimated into a parallel beam with the minimum divergence angle to ensure uniformity in long-distance propagation and the operation of the subsequent optical grating. Finally, the collimated laser beam passes through the optical grating structure 50. The optical grating structure 50 modulates the wavefront of the beam and generates a first side-incident light E1 with specific spot characteristics. For example, the beam can be shaped into a very fine linear spot or a point spot to facilitate high-resolution scanning, or into a specific two-dimensional rectangular pattern to increase sensitivity to specific shapes or defects.

[0050] The optical inspection system 300 also includes a lens 12, a camera 30 (including a photosensitive element), a processing unit 70, and a memory 80. The functions of these components are the same as in the previously described embodiments (for example, Figures 6 and 7), and are used to capture the output light E2 after interaction within the substrate 10, form an image, and perform analysis and determination by artificial intelligence algorithms.

[0051] Similarly, the optical inspection system 300 can also be configured with a scanning mechanism to comprehensively inspect the entire substrate 10 or multiple laser-modified regions 10a on it. For example, if the light spot formed by the light source system (including a beam expander 60, a collimating lens 40, and an optical grating structure 50) is dot-shaped (circular), the first light source 11 (and its series-connected optical components) can be designed to perform a moving scan along one direction of the substrate 10 (e.g., the Y-axis direction), while the camera 30 and its lens 12 perform a synchronous moving scan along another orthogonal direction of the substrate 10 (e.g., the X-axis direction), scanning all laser-modified regions 10a one row at a time. Alternatively, a fixed light source and a fixed camera can be employed, and the substrate 10 can be transported by a moving platform to perform a two-dimensional scan in the XY plane. The detection information for each collected region is then integrated by a processing unit to generate an overall inspection map. The basic principle of inspection utilizing a precisely shaped first side-incident light E1 is the same as in the embodiments described above. The detection principle in Figure 8 utilizes a molded first lateral incident light E1, which interacts with the internal structure and defects of the substrate to generate an analyzable output light E2. This is the same as in the previously described embodiment, so we will not repeat the details here.

[0052] In the various embodiments described above, as shown in Figures 6 to 8, the lens 12 paired with the camera 30 defines a specific field of view (FOV). The FOV refers to the actual area range that the lens 12 can image clearly at a specific working distance, and the size of the FOV determines the area of ​​the substrate 10 that can be observed in a single image. In actual applications, the size of the FOV is designed according to the required resolution, the optical magnification of the lens, and the size of the photosensitive element. Since the area of ​​the substrate 10 to be inspected, or the total area of ​​multiple laser-modified areas 10a distributed thereon, is usually wider than the range of the FOV that the lens 12 can image in a single image, the scanning mechanism described above (for example, moving the substrate 10, or moving the first light source 11 and the camera 30 in sync) uses this FOV as the basic imaging unit. The lens 12 can sequentially acquire multiple partial images of the entire target surface by continuously moving the relative position of the FOV in steps for each area. These sequentially acquired region images are then transmitted to a processing unit 70 for individual analysis, defect identification, or further stitching and integration, thereby enabling comprehensive inspection of large-area substrates and the generation of an overall inspection map. In another embodiment for achieving region-by-region scanning, a more efficient scanning strategy can be employed when a first side-incident light E1 generated by a first light source 11 and optionally configured optical components (e.g., Figure 7 or Figure 8) forms a linear spot on or within the substrate 10. In this case, the linear spot is typically designed to extend along one dimension of the substrate 10 (e.g., the Y-axis direction, i.e., the width or part of the width of the substrate) and provide illumination. Thus, the lens 12 can scan and acquire images of regions of the substrate illuminated by or interacting with the linear spot, one region at a time, simply by moving along a single axis of another dimension substantially perpendicular to the direction of extension of the linear spot (e.g., the X-axis direction). This scanning method can effectively improve the inspection speed and efficiency of large-area substrates because it can acquire region information over a wider bandwidth with each movement of the lens.

[0053] In other embodiments, the optical inspection system may consist of multiple cameras. The cameras may be arranged in a one-dimensional array, for example, along a direction perpendicular to the primary scanning direction of the substrate, or in a two-dimensional array to cover a wider inspection area. By using multiple cameras, the optical inspection system can simultaneously capture images of a wider area of ​​the substrate or a wider angle of view in a single scanning path (when moving) or a single exposure (for static large-area inspection). Thus, the overall inspection throughput and substrate coverage can be effectively improved without significantly increasing the overall scanning time, and in some cases while reducing the requirements for the travel speed of a single scanning axis.

[0054] The optical inspection systems 100 to 300 of this disclosure (shown in Figures 6 to 8) and the corresponding inspection methods are capable of detecting the aforementioned scratches, cracks, dimensions, and contours, as well as evaluating the surface roughness of the substrate 10. Examples of measurable roughness parameters and their detection ranges include arithmetic mean roughness from approximately 0.01 micrometers (μm) to 0.5 micrometers, or average roughness at multiple points. These parameters can be used as indicators to characterize changes in the fine shape of the surface of the substrate 10. The principle of detecting surface roughness can also utilize the interaction between lateral incident light and the surface of the substrate 10. When a first lateral incident light E1 (or a second lateral incident light) is irradiated onto the surface of the substrate 10, the incident light is scattered to various degrees and angles due to the fine irregularities (i.e., roughness) of the surface. Generally, the rougher the surface, the more widely the light is scattered, and the more diffuse the intensity distribution of the scattered light. On the other hand, if the surface is smooth, mainly specular reflection or scattering occurs, and its direction is more concentrated. The lens 12 and camera 30 (including the photosensitive element) play a role in collecting scattered or reflected light modulated by surface roughness to form an image. Subsequently, the processing unit 70 can quantify the surface roughness value by analyzing the spatial distribution of light intensity in the image, the spread of light spots, and the light intensity at specific scattering angles, or by using more complex image texture analysis, artificial intelligence algorithms, etc. In one embodiment, the optical inspection system can finally present the analyzed roughness information visually. For example, a roughness distribution map can be generated in which different color or grayscale levels directly correspond to different measured roughness values ​​or roughness grades. By generating a roughness distribution map, an operator or automated system can intuitively understand the overall state, uniformity, and spatial distribution of the substrate surface roughness in a specific area.

[0055] Figure 9 is a structural diagram of an electronic device according to one embodiment of the present disclosure. Referring to Figure 9, Figure 9 is a schematic cross-sectional view of the structure of the electronic device. This structure can be an electronic package provided by, for example, a wafer-level package (WLP) process, a panel-level package (PLP) process, a system-in-package (SiP), or other similar multilayer heterogeneous integrated modules. This structure can be a chip-first process or a chip-last / RDL-first process, and multiple components are integrated to realize a specific electronic function. As shown in Figure 9, the overall structure of the electronic device can be constructed by stacking from bottom to top. The bottom layer can be a circuit board, such as a printed circuit board, which provides a mechanical support base for the entire device and is equipped with circuits for external connections. The electronic device can be electrically and mechanically connected to the circuit board PCB via a lower connector CE1, such as a solder ball grid array (BGA) or other surface mount technology (SMT) contacts. A buffer section BFF1 can cover the connector CE1. The buffer section BFF1 is an insulating material consisting of an elastic material or a specific structure that can absorb mechanical or thermal stress to protect the reliability of the solder joint of the connector CE1. The structure extending upward from connector CE1 may include a multilayer sub-substrate SS. A conductive material M3P and an insulating layer IL2 for interlayer insulation can be placed on the sub-substrate SS.

[0056] The electronic device further comprises a sub-substrate PL. A redistribution layer (RDL) can be placed beneath (or around) the sub-substrate PL. The main function of the RDL is to redistribute narrow-pitch contacts of the upper active and passive components to wide-pitch contacts on the sub-substrate PL or sub-substrate SS, thereby achieving high-density interconnection. The RDL can be formed by alternately laminating multiple conductive material layers, such as conductive material MP and conductive material M2P, and multiple insulating material layers, such as insulating layer IL and insulating layer IL1. Conductive material CL and conductive material CV, shown in Figure 9, can function as vertical electrical connections between these different conductive layers, for example, as fillers in vias or to form pillars. To further protect the structure, the electronic device may also be configured with other buffer sections. For example, a buffer section BFF2 can surround the edges of through-holes in the multilayer sub-substrate SS to protect the through-holes. A buffer section BFF3 can be placed between the sub-substrate PL and the RDL and cover the connector CE3. Multiple active and / or passive components (collectively referred to as active component EUs and passive component SEs) can be mounted or incorporated onto a sub-board PL. For example, an active component EU is an integrated circuit (IC) chip, and passive component SEs are resistors, capacitors, inductors, etc. These active component EUs and passive component SEs can be electrically connected to the RDL or other underlying circuit layers via connectors CE3. Furthermore, an intermediate layer IST can be placed on or around the sub-board PL and active / passive component SEs. The top of the intermediate layer IST also includes connectors CE2 for connecting to other modules, test points, or as part of the package. In addition, in electronic devices, the outermost layer can be a encapsulation layer, which can seal and protect all internal electronic components from the external environment (moisture, dust, mechanical damage, etc.).

[0057] Furthermore, the sub-substrate PL and multilayer sub-substrate SS of electronic devices can be applied to the glass through-via manufacturing method and optical inspection method described in the above embodiments. For example, the sub-substrate PL and multilayer sub-substrate SS themselves can be used as the target substrate 10 for performing the "first modification step" (as shown in step S102 and Figure 2). For example, multiple laser-modified regions 10a can be formed on the sub-substrate PL and multilayer sub-substrate SS using a laser, in preparation for subsequent etching for glass through-via formation. After the laser modification is complete and before the etching process, the laser-modified regions 10a on the sub-substrate PL and multilayer sub-substrate SS can be inspected using the optical inspection system (100, 200, or 300) and method disclosed in step S103 and Figures 4 to 8. In other words, the manufacturing method and inspection method of the above embodiments can be effectively applied to the processing and quality control processes of internal substrates (such as sub-substrate PL and multilayer sub-substrate SS) in electronic devices as shown in Figure 9.

[0058] In Figure 9, the edges of the sub-substrate PL can be designed in an arc shape or curved shape. Compared to conventional right angles or acute angles, adopting such arc shape or curved edge designs offers the following advantages: Firstly, arc shape or curved edge designs can reduce stress concentration. Acute angles tend to be stress concentration points, and cracks are more likely to occur, especially when subjected to thermal expansion and contraction due to temperature changes or external mechanical stress. Arc shape edges distribute stress more uniformly, significantly reducing the risk of cracking and failure at the edges of the sub-substrate PL (especially when the sub-substrate PL is made of brittle material such as glass). Secondly, arc shape or curved edge designs can improve packaging reliability. By reducing potential crack initiation points and stress failure points, arc shape or curved edge designs can improve the overall mechanical strength, fatigue resistance, and long-term reliability of the electronic device. Thirdly, arc shape or curved edge designs can improve the yield of the molding process. When performing injection molding or other overmolding processes, arc-shaped or curved edges improve the fluidity of the molding material (e.g., epoxy resin), reducing the occurrence of defects such as bubbles, voids, and uneven filling, thereby improving package quality and yield. Therefore, in the embodiment shown in Figure 9, the arc-shaped or curved edge design of the sub-substrate PL can improve the structural stability, durability, and process yield of electronic devices, making them particularly suitable for high-end packaging applications with higher reliability requirements or greater process stress. According to several embodiments, the electronic devices referred to in this disclosure may include, but are not limited to, chip-on-wafer-on-substrate (CoWoS) package structures, system-on-a-chip (SoC), system-in-a-package (SiP), antenna-in-package (AiP), co-packaged optics (CPO), or various combinations of the aforementioned devices.

[0059] Figure 10 is a structural diagram of an electronic device according to another embodiment of the present disclosure. Referring to Figure 10, Figure 10 is a schematic cross-sectional view of the structure of an electronic device according to another embodiment of the present disclosure. The overall configuration, main components, and basic functions of the electronic device shown in Figure 10 are similar in many respects to the electronic device shown in Figure 9. For the sake of brevity, the detailed structure and connection relationships of these components, which are identical or functionally corresponding to those of the embodiment in Figure 9, will not be repeated here, and the preceding description of Figure 9 can be referenced. The most significant difference between the electronic device shown in Figure 10 and the previously described embodiment lies in the edge design of the sub-substrate PL. In the electronic device of Figure 10, the edges of the sub-substrate PL are designed to be wavy or undulating / uneven. This edge contour is an undulating, nonlinear geometric feature that replaces the conventional straight cut edges or simple arcuate / curved edges described in the embodiment of Figure 9. The technical advantages of adopting a wavy or undulating design for the edges of the sub-substrate PL are similar to the advantages of the arcuate edges in the embodiment of Figure 9, and may result in further improvements in several aspects. In one embodiment, employing a wavy or undulating design at the edge provides superior stress distribution and reduction. Due to their geometric discontinuities and multiple curvature changes, wavy or undulating edge contours more effectively block stress propagation paths than simple arcs, allowing for more uniform distribution of concentrated stresses over a wider edge area during the manufacturing process (substrate dicing, package molding, etc.) or subsequent use (temperature cycling, mechanical loading, etc.). This design significantly reduces the initial probability and propagation tendency of microcracks at the sub-substrate PL edges by increasing stress relaxation points and altering stress concentration patterns (especially in the case of brittle materials such as glass). Furthermore, employing a wavy or undulating design at the edge can improve crack propagation resistance. Even under extreme stress conditions, if initial microcracks occur at the sub-substrate PL edges, the wavy or undulating surface shape may cause the crack propagation path to become more winding and irregular.This increases the fracture energy required for crack propagation, potentially causing cracks to change direction or terminate during propagation, suppressing or effectively delaying overall crack propagation, and further improving the device's durability and reliability in harsh environments. Therefore, in the embodiment shown in Figure 10, the wavy or undulating edge design of the sub-substrate PL can also improve the structural stability, durability, and process yield of the electronic device, making it particularly suitable for application scenarios with extremely high requirements for mechanical reliability, impact resistance, or long lifespan.

[0060] In summary, the embodiments disclose a method for manufacturing electronic devices and an optical inspection system. The optical inspection system uses a combination of side-incident light technology and artificial intelligence algorithms to inspect the interior and surface of a substrate in real time after a first laser modification step and before etching. The optical inspection system may include specific light sources (such as light-emitting diode light bars or laser light sources), optically molded parts (such as collimating lenses, beam expanders, and optical grating structures), lenses, and processing units. The optical inspection system can be combined with various spot lighting and multi-camera configurations to effectively address and complete the comprehensive inspection requirements of large substrates, thereby achieving efficient and highly accurate inspection. Furthermore, the arcuate, wavy, or undulating edge design of sub-substrates in electronic devices helps reduce stress concentration and improve structural reliability. In addition, the optical inspection system can accurately identify multiple features such as scratches, cracks, surface roughness, and key dimensions, determine whether rework is necessary based on these features, and adjust process parameters, thereby effectively overcoming the shortcomings of conventional top-surface inspection and significantly improving production yield and overall efficiency.

[0061] Those skilled in the art will readily understand that numerous modifications and changes can be made to the devices and methods while maintaining the teachings of this disclosure. Accordingly, the foregoing disclosure is construed to be limited only by the boundaries and scope of the appended claims.

Claims

1. A method for manufacturing electronic devices, Prepare the circuit board, Performing a first modification step on at least a portion of the substrate, To generate a first lateral incident light and introduce the first lateral incident light into the interior of the substrate, After the first modification step, the substrate is inspected to obtain detection information regarding the state of the substrate, Based on the detection information, it is determined whether a reprocessing process for the substrate is necessary. A method that includes this.

2. If it is determined that the reprocessing process of the substrate is necessary, the laser re-modification step is performed on the substrate. The method according to claim 1, further comprising:

3. The method according to claim 2, wherein the first modification step is performed using first laser conditions, and the laser re-modification step is performed using second laser conditions, the second laser conditions being different from the first laser conditions.

4. The method according to claim 1, wherein the wavelength range of the first side-incident light is 360 nanometers to 830 nanometers.

5. If it is determined that the substrate does not require the reprocessing process, an etching step is performed on the substrate to form at least one through-hole in the substrate. The method according to claim 1, further comprising:

6. To generate a second lateral incident light that enters the substrate from another side and introduce the second lateral incident light into the interior of the substrate. The method according to claim 1, further comprising:

7. The optical pattern of the first side-incident light is adjusted using an optical lattice structure. The method according to claim 1, further comprising:

8. The step of inspecting the substrate is performed sequentially on multiple regions of the substrate. The detection information obtained for the aforementioned multiple regions is integrated to generate an overall inspection map of the substrate. The method according to claim 1, further comprising:

9. The method according to claim 1, wherein the first lateral incident light is generated by a light-emitting diode (LED) light bar, and a collimating lens is positioned between the LED light bar and the substrate to collimate the first lateral incident light.

10. The method according to claim 1, wherein the first side-incident light is generated by a laser light source, and a beam expander and a collimating lens are arranged between the laser light source and the substrate to enhance the expansion characteristics of the first side-incident light.

11. An optical inspection system, The object to be measured and, A first light source is positioned to the side of the object to be measured and configured to provide first lateral incident light, A lens positioned above the object to be measured and Equipped with, A system in which, after a first modification step is performed on at least a portion of the object to be measured, the first light source generates the first side incident light and introduces the first side incident light into the object to be measured, the lens inspects an image of the object to be measured after the first modification step, the image is formed on a photosensitive element to obtain detection information regarding the state of the object to be measured, and the detection information is used to determine whether a reprocessing process is required for the object to be measured.

12. The system further comprises a memory configured to store at least one reference laser pattern data, and a processing unit coupled to the lens and the memory, The system according to claim 11, wherein the processing unit is configured to receive the detection information and execute an artificial intelligence (AI) algorithm for determining whether the object to be measured requires the reprocessing process by comparing the detection information with the at least one reference laser pattern data.

13. If the object to be measured requires a reprocessing process, the object to be measured undergoes a laser re-modification step, the first modification step is performed using first laser conditions, and the laser re-modification step is performed using second laser conditions, the second laser conditions being different from the first laser conditions, according to claim 12.

14. The system according to claim 12, wherein the lens is configured to sequentially inspect a plurality of regions of the object to be measured, and the processing unit is configured to integrate the detection information acquired for the plurality of regions to generate an overall inspection map of the object to be measured.

15. The system according to claim 12, wherein the processing unit is configured to determine whether at least one scratch exists on the object to be measured, whether at least one crack exists on the object to be measured, based on the detection information, evaluate the surface roughness of the object to be measured, and measure the pitch between two adjacent through-hole regions after the first modification step to determine whether the pitch conforms to a preset standard.

16. The system according to claim 11, wherein the wavelength range of the first side incident light provided by the first light source is 360 nanometers to 830 nanometers.

17. The system further comprises a second light source positioned to another side of the object to be measured and configured to provide a second lateral incident light introduced into the interior of the object to be measured, The system according to claim 11, wherein the lens is further configured to inspect the image of the second side-incident light formed on the photosensitive element.

18. The system according to claim 11, further comprising an optical lattice structure positioned between the first light source and the object to be measured and configured to adjust the light pattern of the first side-incident light.

19. The system further comprises a collimating lens positioned between the first light source and the object to be measured, configured to collimate the first side-incident light, The system according to claim 11, wherein the first light source is a light-emitting diode (LED) light bar.

20. The system further comprises a collimating lens disposed between the first light source and the object to be measured, and a beam expander disposed between the collimating lens and the first light source. The system according to claim 11, wherein the first light source is a laser light source.

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