Light-emitting devices, projectors, and electronic devices

Abstract

To provide a light-emitting device that can improve brightness. [Solution] A light-emitting device comprising: a first laminate having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a first light-emitting layer; a second laminate having a third semiconductor layer of a first conductivity type, a fourth semiconductor layer of a second conductivity type, and a second light-emitting layer; a fifth semiconductor layer of a second conductivity type provided between the second semiconductor layer and the fourth semiconductor layer and in contact with the second semiconductor layer and the fourth semiconductor layer; a reflective portion provided between the first light-emitting layer and the second light-emitting layer; a first electrode provided on the side of the first semiconductor layer opposite to the first light-emitting layer side; a second electrode provided on the side of the third semiconductor layer opposite to the second light-emitting layer side; and a common electrode provided on the side of the second semiconductor layer opposite to the first light-emitting layer side, the side of the fourth semiconductor layer opposite to the second light-emitting layer side, and the side of the fifth semiconductor layer opposite to the reflective portion side, which transmits light generated in the first light-emitting layer and the second light-emitting layer.

Description

Technical Field

[0001] The present invention relates to a light-emitting device, a projector, and an electronic device.

Background Art

[0002] Light-emitting elements such as LEDs (Light Emitting Diodes) are applied to electronic devices such as displays.

[0003] For example, Patent Document 1 describes a micro LED element including a nitride semiconductor layer composed of an N-type layer, a light-emitting layer, and a P-type layer, an embedded layer, a P-side electrode layer, and a common N-side electrode layer. As the common N-side electrode layer, a transparent conductive film such as ITO is adopted.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] ITO (Indium Tin Oxide) has a higher resistivity than general metals used for wiring. Therefore, the injection current into the light-emitting layer may be reduced and the luminance may decrease.

Means for Solving the Problems

[0006] One aspect of the light-emitting device according to the present invention is a first laminate including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and a first light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; A second laminate comprising a third semiconductor layer having the first conductivity type, a fourth semiconductor layer having the second conductivity type, and a second light-emitting layer provided between the third semiconductor layer and the fourth semiconductor layer, A fifth semiconductor layer is provided between the second semiconductor layer and the fourth semiconductor layer, is in contact with the second semiconductor layer and the fourth semiconductor layer, and has the second conductivity type, A reflective portion provided between the first light-emitting layer and the second light-emitting layer, A first electrode provided on the side of the first semiconductor layer opposite to the first light-emitting layer, A second electrode provided on the side of the third semiconductor layer opposite to the second light-emitting layer, A common electrode is provided on the side of the second semiconductor layer opposite to the first light-emitting layer, on the side of the fourth semiconductor layer opposite to the second light-emitting layer, and on the side of the fifth semiconductor layer opposite to the reflective portion, which transmits light generated in the first light-emitting layer and light generated in the second light-emitting layer. It holds.

[0007] One aspect of the projector according to the present invention is: This includes the aforementioned light-emitting device.

[0008] One aspect of the electronic device according to the present invention is: This includes the aforementioned light-emitting device. [Brief explanation of the drawing]

[0009] [Figure 1] A schematic cross-sectional view showing the light-emitting device according to this embodiment. [Figure 2] A schematic cross-sectional view showing the manufacturing process of the light-emitting device according to this embodiment. [Figure 3] A schematic cross-sectional view showing the manufacturing process of the light-emitting device according to this embodiment. [Figure 4] A schematic cross-sectional view showing the manufacturing process of the light-emitting device according to this embodiment. [Figure 5] A schematic cross-sectional view showing a light-emitting device according to a first modified example of this embodiment. [Figure 6] A schematic cross-sectional view showing a light-emitting device according to a second modified example of this embodiment. [Figure 7] A diagram schematically showing the projector according to this embodiment. [Figure 8] A plan view schematically showing the display according to this embodiment. [Figure 9] A cross-sectional view schematically showing the display according to this embodiment. [Figure 10] A perspective view schematically showing the head-mounted display according to this embodiment. [Figure 11] A diagram schematically showing the image forming device and the light guiding device of the head-mounted display according to this embodiment. [Figure 12] A diagram schematically showing the model used in the simulation. [Figure 13] A table showing the results of the simulation.

Mode for Carrying Out the Invention

[0010] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. The embodiments described below do not unduly limit the content of the present invention described in the claims. Also, not all of the configurations described below are essential constituent elements of the present invention.

[0011] 1. Light-emitting device 1.1 Overall configuration First, the light-emitting device according to this embodiment will be described while referring to the drawings. FIG. 1 is a diagram schematically showing the light-emitting device 100 according to this embodiment.

[0012] As shown in FIG. 1, for example, the light-emitting device 100 has a plurality of light-emitting elements 102. The plurality of light-emitting elements 102, for example, have the same structure as each other. In the illustrated example, as the plurality of light-emitting elements 102, a first light-emitting element 102a and a second light-emitting element 102b are provided. The first light-emitting element 102a and the second light-emitting element 102b are provided side by side when viewed in the stacking direction. The plurality of light-emitting elements 102 may be arranged in a matrix when viewed in the stacking direction. The light-emitting element 102, for example, has a stacked structure 10, a p electrode 20, a metal layer 30, an n electrode 40, and a lens layer 50. The light-emitting element 102 is, for example, an LED. Further, the light-emitting device 100 has a reflection part 60 and a connection semiconductor layer 70.

[0013] Note that the "stacking direction" refers to the stacking direction of the p-type semiconductor layer 12 and the light-emitting layer 14 of the stacked structure 10.

[0014] The stacked structure 10 is provided between the p electrode 20 and the n electrode 40. In the illustrated example, the stacked structure 10 is provided on the p electrode 20. The stacked structure 10 has a tapered portion 11 having a tapered shape in which the width increases from the p electrode 20 side toward the n electrode 40 side. The diameter D1 of the end of the tapered portion 11 on the n electrode 40 side is larger than the diameter D2 of the end of the tapered portion 11 on the p electrode 20 side. In the illustrated example, the shape of the tapered portion 11 is trapezoidal. The side surface 11a of the tapered portion 11 is inclined with respect to the stacking direction. The inclination angle θ of the side surface 11a with respect to the stacking direction is, for example, 5° or more and 33° or less, and more preferably 10° or more and 30° or less in consideration of process tolerances.

[0015] Note that in this specification, in the stacking direction, when the light-emitting layer 14 of the stacked structure 10 is used as a reference, the direction from the light-emitting layer 14 toward the n-type semiconductor layer 16 of the stacked structure 10 is described as "up", and the direction from the light-emitting layer 14 toward the p-type semiconductor layer 12 of the stacked structure 10 is described as "down".

[0016] Furthermore, the "diameter of the tapered portion 11" refers to the diameter if the planar shape of the tapered portion 11 is a circle, and to the diameter of the smallest inclusion circle if the planar shape of the tapered portion 11 is not a circle. For example, if the planar shape of the tapered portion 11 is a polygon, the diameter of the smallest circle that contains the polygon is the diameter of the smallest circle that contains the ellipse is the diameter of the ellipse. The same applies to the diameter of the light-emitting layer 14 and the diameter of the convex lens portion 52, which will be described later.

[0017] The laminated structure 10 includes a p-type semiconductor layer 12, an emissive layer 14, and an n-type semiconductor layer 16. The p-type semiconductor layer 12, the emissive layer 14, and the n-type semiconductor layer 16 constitute a tapered portion 11. The p-type semiconductor layer 12, the emissive layer 14, and the n-type semiconductor layer 16 are, for example, group III nitride semiconductors and have a wurtzite crystal structure.

[0018] The p-type semiconductor layer 12 is provided on the p-electrode 20. The p-type semiconductor layer 12 is provided between the p-electrode 20 and the light-emitting layer 14. The p-type semiconductor layer 12 is, for example, a Mg-doped p-type GaN layer.

[0019] The light-emitting layer 14 is provided on the p-type semiconductor layer 12. The light-emitting layer 14 is provided between the p-type semiconductor layer 12 and the n-type semiconductor layer 16. The diameter D3 of the light-emitting layer 14 is, for example, 0.5 μm or more and 3 μm or less. The light-emitting layer 14 has an i-type conductivity that is not intentionally doped with impurities. The light-emitting layer 14 generates light when an electric current is injected. The light-emitting layer 14 has, for example, a well layer and a barrier layer. The well layer and the barrier layer are i-type semiconductor layers. The well layer is, for example, an InGaN layer. The barrier layer is, for example, a GaN layer. The light-emitting layer 14 is composed of a well layer and a barrier layer and is MQW (Multiple It has a Quantum Well structure.

[0020] The number of well layers and barrier layers constituting the light-emitting layer 14 is not particularly limited. For example, there may be only one well layer, in which case the light-emitting layer 14 has an SQW (Single Quantum Well) structure.

[0021] The n-type semiconductor layer 16 is provided on the light-emitting layer 14. The n-type semiconductor layer 16 is provided between the light-emitting layer 14 and the n-electrode 40. In the illustrated example, the size of the n-type semiconductor layer 16 in the stacking direction is larger than the size of the p-type semiconductor layer 12 in the stacking direction and the size of the light-emitting layer 14 in the stacking direction. The n-type semiconductor layer 16 has a portion that constitutes a tapered portion 11 and a portion that does not constitute a tapered portion 11. The portion that does not constitute a tapered portion 11 is provided between the portion that constitutes a tapered portion 11 and the n-electrode 40. The n-type semiconductor layer 16 is, for example, a Si-doped n-type GaN layer.

[0022] The n-type semiconductor layer 16 has a contact surface 17 that contacts the n electrode 40. The contact surface 17 has an uneven surface structure 18. The shape of the contact surface 17 is uneven. The uneven surface structure 18 is provided, for example, across the entire surface of the contact surface 17. The protrusions 19 form the uneven surface structure 18. Multiple protrusions 19 are provided. The multiple protrusions 19 are provided, for example, periodically. The height H of the protrusions 19 is, for example, 400 nm or more. The distance G between the tips of adjacent protrusions 19 is, for example, 230 nm or less. The uneven surface structure 18 may be a moth-eye structure. Although not shown in the figures, the multiple protrusions 19 may be arranged randomly.

[0023] In the light-emitting element 102, a PIN diode is formed by a p-type semiconductor layer 12, an i-type light-emitting layer 14, and an n-type semiconductor layer 16. When the forward bias voltage of the PIN diode is applied between the p-electrode 20 and the n-electrode 40 of the light-emitting element 102, a current is injected into the light-emitting layer 14, causing recombination of electrons and holes in the light-emitting layer 14. This recombination causes the light-emitting layer 14 to generate light.

[0024] The p electrode 20 is located on the side of the p-type semiconductor layer 12 opposite to the light-emitting layer 14. The p-type semiconductor layer 12 may be in ohmic contact with the p electrode 20. The p electrode 20 is electrically connected to the p-type semiconductor layer 12. The p electrode 20 reflects the light generated in the light-emitting layer 14 towards the n electrode 40. The material of the p electrode 20 is, for example, gold (Au). The p electrode 20 is one of the electrodes for injecting current into the light-emitting layer 14. For example, the potential of a data signal is applied to the p electrode 20. The p electrode 20 is an independent electrode in a plurality of light-emitting elements 102.

[0025] The metal layer 30 is provided to the side of the tapered portion 11. The metal layer 30 is provided to the side of the light-emitting layer 14. The metal layer 30 is provided on the side surface 11a of the tapered portion 11 via the first layer 62 of the reflecting portion 60. When viewed from the stacking direction, the metal layer 30 surrounds the tapered portion 11. The metal layer 30 is separated from the tapered portion 11. The first layer 62 of the reflecting portion 60 is provided between the metal layer 30 and the tapered portion 11. In the illustrated example, the metal layer 30 is connected to the p electrode 20. The size N of the metal layer 30 in the stacking direction is, for example, about 1 μm. The material of the metal layer 30 is, for example, an Au layer or an Ag layer. Even if light generated in the light-emitting layer 14 passes through the first layer 62 of the reflecting portion 60, the metal layer 30 reflects the transmitted light toward the n electrode 40.

[0026] The reflective portion 60 is provided between the tapered portions 11 of adjacent light-emitting elements 102. The reflective portion 60 is provided between the light-emitting layers 14 of adjacent light-emitting elements 102. When viewed from the stacking direction, the reflective portion 60 surrounds the tapered portions 11. The reflective portion 60 is in contact with the side surface 11a of the tapered portions 11. The refractive index of the reflective portion 60 is lower than the refractive index of the stacked structure 10. Specifically, the refractive index of the reflective portion 60 is lower than the refractive index of the p-type semiconductor layer 12, the refractive index of the light-emitting layer 14, and the refractive index of the n-type semiconductor layer 16. The difference between the refractive index of GaN and the refractive index of the material constituting the reflective portion 60 is, for example, 0.8 or more. The material of the reflective portion 60 is, for example, SiO2 or Al2O3. The reflective portion 60 reflects the light generated in the light-emitting layer 14 toward the n-electrode 40.

[0027] The distance L in the stacking direction between the n-electrode 40 side end of the reflective portion 60 and the n-electrode 40 side end of the light-emitting layer 14 is, for example, greater than 0.8 times the diameter D3 of the light-emitting layer 14. In the illustrated example, the distance L is the distance between the upper end of the reflective portion 60 and the upper end of the light-emitting layer 14. The distance L is, for example, greater than the diameter D3 of the light-emitting layer 14. The distance L is, for example, between 2.5 μm and 6 μm.

[0028] The reflective portion 60 includes, for example, a first layer 62 and a second layer 64. The first layer 62 is provided on the side surface 11a of the tapered portion 11. The first layer 62 surrounds the tapered portion 11 when viewed from the stacking direction. The second layer 34 is provided on the first layer 62 and the metal layer 30. The second layer 64 surrounds the first layer 62, the metal layer 30, and the tapered portion 11 when viewed from the stacking direction.

[0029] The connecting semiconductor layer 70 is provided between the n-type semiconductor layers 16 of adjacent light-emitting elements 102. The connecting semiconductor layer 70 is in contact with the n-type semiconductor layers 16 of adjacent light-emitting elements 102. In the illustrated example, the connecting semiconductor layer 70 is provided between the n-type semiconductor layer 16 of the first light-emitting element 102a and the n-type semiconductor layer 16 of the second light-emitting element 102b. More specifically, the connecting semiconductor layer 70 is provided between the portion of the n-type semiconductor layer 16 of the first light-emitting element 102a that does not constitute the tapered portion 11 and the portion of the n-type semiconductor layer 16 of the second light-emitting element 102b that does not constitute the tapered portion 11. The connecting semiconductor layer 70 is in contact with the n-type semiconductor layer 16 of the first light-emitting element 102a and the n-type semiconductor layer 16 of the second light-emitting element 102b. The connecting semiconductor layer 70 is continuous with the n-type semiconductor layer 16. The connecting semiconductor layer 70 is provided integrally with the n-type semiconductor layer 16. It may be integrated, or it may be provided as a separate component. The material of the connecting semiconductor layer 70 is, for example, the same as the material of the n-type semiconductor layer 16. The impurity concentration of the connecting semiconductor layer 70 may be higher than that of the n-type semiconductor layer 16.

[0030] The connecting semiconductor layer 70 is provided on the reflective portion 60. The connecting semiconductor layer 70 is provided between the reflective portion 60 and the n electrode 40. The connecting semiconductor layer 70 has a contact surface 72 that contacts the n electrode 40. The contact surface 72 does not have an uneven structure. The contact surface 72 is a flat surface.

[0031] The n-electrode 40 is provided on the n-type semiconductor layer 16 and the connecting semiconductor layer 70. The n-electrode 40 is provided between the n-type semiconductor layer 16 and the connecting semiconductor layer 70 and the lens layer 50. The n-electrode 40 is provided on the side of the n-type semiconductor layer 16 opposite to the light-emitting layer 14 and on the side of the connecting semiconductor layer 70 opposite to the reflective portion 60. The n-electrode 40 may be in ohmic contact with the n-type semiconductor layer 16 and the connecting semiconductor layer 70. The n-electrode 40 is electrically connected to the n-type semiconductor layer 16 and the connecting semiconductor layer 70.

[0032] The n-electrode 40 constitutes a common electrode shared by multiple light-emitting elements 102. The n-electrode 40 transmits light generated in the light-emitting layer 14. The light generated in the light-emitting layer 14 is emitted from the n-electrode 40 side. The n-electrode 40 is a transparent electrode such as ITO. The n-electrode 40 is the other electrode for injecting current into the light-emitting layer 14.

[0033] The lens layer 50 is provided on the n electrode 40. In the illustrated example, the lens layer 50 is continuous with adjacent light-emitting elements 102. The lens layer 50 constitutes, for example, a lens array. The lens layer 50 is, for example, a SiON layer. The lens layer 50 has a convex lens portion 52. The convex lens portion 52 overlaps with the light-emitting layer 14 when viewed from the stacking direction. The diameter D4 of the convex lens portion 52 is, for example, about 6.8 μm. Light generated in the light-emitting layer 14 is emitted from the convex lens portion 52. The convex lens portion 52 can narrow the angle of illumination of the emitted light and improve projection efficiency.

[0034] In the above example, the n-type semiconductor layer 16 is provided on the lens layer 50 side of the light-emitting layer 14, and the p-type semiconductor layer 12 is provided on the opposite side of the light-emitting layer 14 from the lens layer 50 side. However, the p-type and n-type can be reversed. That is, although not shown in the figures, the p-type semiconductor layer may be provided on the lens layer of the light-emitting layer, and the n-type semiconductor layer may be provided on the opposite side of the light-emitting layer from the lens layer side. In this case, the electrode provided on the lens layer side of the p-type semiconductor layer becomes the p-electrode, and the electrode provided on the opposite side of the lens layer side of the n-type semiconductor layer becomes the n-electrode.

[0035] Furthermore, although the InGaN-based light-emitting layer 24 was described above, various material systems capable of emitting light when current is injected according to the wavelength of the emitted light can be used as the light-emitting layer 24. For example, semiconductor materials such as AlGaN-based, AlGaAs-based, InGaAs-based, InGaAsP-based, InP-based, GaP-based, and AlGaP-based materials can be used.

[0036] 1.2. Effects The light-emitting device 100 has a first laminated structure 10 of the first light-emitting element 102a, and a second laminated structure 10 of the second light-emitting element 102b. The laminated structure 10 of the first light-emitting element 102a has a p-type semiconductor layer 12 as a first semiconductor layer, an n-type semiconductor layer 16 as a second semiconductor layer, and a light-emitting layer 14 as a first light-emitting layer provided between the p-type semiconductor layer 12 and the n-type semiconductor layer 16. The laminated structure 10 of the second light-emitting element 102b has a p-type semiconductor layer 12 as a third semiconductor layer, an n-type semiconductor layer 16 as a fourth semiconductor layer, and a light-emitting layer 14 as a second light-emitting layer provided between the p-type semiconductor layer 12 and the n-type semiconductor layer 16. Furthermore, the light-emitting device 100 has an n-type semiconductor layer 16 of the first light-emitting element 102a The light-emitting device 100 has a connecting semiconductor layer 70 as a fifth semiconductor layer having n-type properties, which is provided between the n-type semiconductor layer 16 of the first light-emitting element 102a and the n-type semiconductor layer 16 of the second light-emitting element 102b, and is in contact with the n-type semiconductor layer 16 of the first light-emitting element 102a and the n-type semiconductor layer 16 of the second light-emitting element 102b. Furthermore, the light-emitting device 100 has a reflecting portion 60 provided between the light-emitting layer 14 of the first light-emitting element 102a and the light-emitting layer 14 of the second light-emitting element 102b. Furthermore, the light-emitting device 100 has an n-electrode 40 as a common electrode that transmits light generated in the light-emitting layer 14 of the first light-emitting element 102a and the light-emitting layer 14 of the second light-emitting element 102b, which is provided on the side of the n-type semiconductor layer 16 of the first light-emitting element 102a that is on the side of the light-emitting layer 14 of the second light-emitting element 102b, which is on the side of the n-type semiconductor layer 16 of the first light-emitting element 102b that is on the side of the n-type semiconductor layer 16 of the second light-emitting element 102b, and which is on the side of the reflecting portion 60 of the connecting semiconductor layer 70. Furthermore, the first light-emitting element 102a has a p-electrode 20 as a first electrode provided on the side of the p-type semiconductor layer 12 opposite to the light-emitting layer 14, and the second light-emitting element 102b has a p-electrode 20 as a second electrode provided on the side of the p-type semiconductor layer 12 opposite to the light-emitting layer 14.

[0037] Therefore, in the light-emitting device 100, the resistance of the wiring composed of the n electrode 40 and the connecting semiconductor layer 70 can be reduced compared to a case where the connecting semiconductor layer is not provided. This allows for an increase in the amount of current injected into the light-emitting layer 14, thereby improving brightness. Furthermore, it is possible to improve light utilization efficiency, reduce heat generation, miniaturize the housing (not shown) that houses the light-emitting device 100, and reduce costs.

[0038] In the light-emitting device 100, the contact surface 17 of the n-type semiconductor layer 16 that contacts the n-electrode 40 has an uneven structure 18, while the contact surface 72 of the connecting semiconductor layer 70 that contacts the n-electrode 40 is a flat surface. Therefore, in the light-emitting device 100, the change in refractive index at the interface between the n-type semiconductor layer 16 and the n-electrode 40 can be made smoother in the direction from the n-type semiconductor layer 16 towards the n-electrode 40. This reduces the light reflected at the interface between the n-type semiconductor layer 16 and the n-electrode 40. Consequently, the light extraction efficiency can be improved. Furthermore, because the contact surface 72 is a flat surface, the light emitted from above the connecting semiconductor layer 70 can be reduced, thereby reducing crosstalk between adjacent light-emitting elements 102.

[0039] In the light-emitting device 100, the p-type semiconductor layer 12, the n-type semiconductor layer 16, and the light-emitting layer 14 form a tapered portion 11. The diameter D1 at the end of the n-electrode 40 of the tapered portion 11 is larger than the diameter D2 on the p-electrode 20 side of the tapered portion 11. The refractive index of the reflective portion 60 is lower than the refractive index of the laminated structure 10, and the reflective portion 60 is in contact with the side surface 11a of the tapered portion 11. Therefore, in the light-emitting device 100, the reflective portion 60 can reflect the light generated in the light-emitting layer 14 towards the n-electrode 40.

[0040] In the light-emitting device 100, the inclination angle θ of the side surface 11a of the tapered portion 11 with respect to the stacking direction is between 5° and 33°. Therefore, the light-emitting device 100 can improve screen efficiency, as shown in "6. Experimental Example" described later. The screen efficiency is calculated by the following formula (1).

[0041] Screen efficiency = (Amount of light projected onto the screen) / (Amount of light generated by the light-emitting layer) ...(1)

[0042] In the light-emitting device 100, the distance L in the stacking direction between the n-electrode 40 side end of the reflective section 60 and the n-electrode 40 side end of the light-emitting layer 14 is greater than 0.8 times the diameter D3 of the light-emitting layer 14. Therefore, the screen efficiency can be improved in the light-emitting device 100, as shown in "7. Experimental Example" described later.

[0043] 2. Method for manufacturing a light-emitting device Next, the manufacturing method of the light-emitting device 100 according to this embodiment will be described with reference to the drawings. Figures 2 to 4 are schematic cross-sectional views illustrating the manufacturing process of the light-emitting device 100 according to this embodiment.

[0044] As shown in Figure 2, an n-type semiconductor layer 16, an emissive layer 14, and a p-type semiconductor layer 12 are epitaxially grown on a growth substrate 80 in this order. Examples of epitaxial growth methods include MOCVD (Metal Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy). This process forms the laminated structure 10. The growth substrate 80 can be, for example, a GaN substrate, a sapphire substrate, a silicon substrate, or a SiC substrate. The growth substrate 80 is a substrate for epitaxial growth of the laminated structure 10.

[0045] Next, the laminated structure 10 is patterned to form a tapered portion 11. The patterning is performed so that the side surface 11a of the tapered portion 11 is inclined with respect to the stacking direction. The patterning is performed so that a portion of the n-type semiconductor layer 16 remains as a connecting semiconductor layer 70. The patterning is performed, for example, by photolithography and etching.

[0046] As shown in Figure 3, a first layer 62 of the reflective portion 60 is formed on the side surface 11a of the tapered portion 11. The first layer 62 is formed, for example, by CVD (Chemical Vapor Deposition) or sputtering.

[0047] Next, a metal layer 30 is formed on the first layer 62. The metal layer 30 is formed, for example, by sputtering, CVD, or vacuum deposition.

[0048] Next, a second layer 64 of the reflective portion 60 is formed between adjacent tapered portions 11. The second layer 64 is formed by, for example, CVD, sputtering, or spin coating. This process forms a reflective portion 60 having a first layer 62 and a second layer 64.

[0049] Next, a p-electrode 20 is formed on the p-type semiconductor layer 12. The p-electrode 20 is formed, for example, by sputtering, CVD, or vacuum deposition.

[0050] As shown in Figure 4, the structure consisting of the laminated structure 10, p electrode 20, metal layer 30, reflective portion 60, connecting semiconductor layer 70, and growth substrate 80 is inverted, and then the growth substrate 80 is removed. Then, the upper surface of the n-type semiconductor layer 16 is patterned to form the uneven structure 18. The patterning is performed, for example, by photolithography and etching. The upper surface of the connecting semiconductor layer 70 is covered with a resist layer (not shown) and is therefore not etched.

[0051] As shown in Figure 1, n electrodes 40 are formed on the n-type semiconductor layer 16 and the connecting semiconductor layer 70. The n electrodes 40 are formed, for example, by sputtering, CVD, or vacuum deposition.

[0052] Next, a lens layer 50 is formed on the n electrode 40. The lens layer 50 is formed, for example, by sputtering or CVD. Then, the lens layer 50 is patterned to form a convex lens portion 52. Patterning is performed, for example, by photolithography and etching.

[0053] The light-emitting device 100 can be manufactured through the above process.

[0054] 3. Modified examples of light-emitting devices 3.1. First Variation Next, a light-emitting device according to the first modified example of this embodiment will be described with reference to the drawings. Figure 5 is a schematic cross-sectional view showing the light-emitting device 200 according to the first modified example of this embodiment.

[0055] Hereinafter, in the first modified light-emitting device 200 of this embodiment, components having the same function as the components of the light-emitting device 100 according to the above embodiment will be denoted by the same reference numerals, and their detailed descriptions will be omitted. The same applies to the second modified light-emitting device of this embodiment, which will be described later.

[0056] In the light-emitting device 100 described above, as shown in Figure 1, the contact surface 72 of the connecting semiconductor layer 70 with the n electrode 40 was a flat surface.

[0057] In contrast, in the light-emitting device 200, as shown in Figure 5, the contact surface 72 of the connecting semiconductor layer 70 has a bumpy structure 74. The shape of the bumpy structure 74 is, for example, the same as the shape of the bumpy structure 18 of the n-type semiconductor layer 16. The bumpy structure 74 is continuous with the bumpy structure 18 and has a plurality of protrusions 76 with the same period as the protrusions 19 of the bumpy structure 18. The bumpy structure 74 is formed by patterning the upper surface of the connecting semiconductor layer 70, similar to the bumpy structure 18.

[0058] In the light-emitting device 200, the contact surface 17 of the n-type semiconductor layer 16 that contacts the n-electrode 40, and the contact surface 72 of the connecting semiconductor layer 70 that contacts the n-electrode 40, have an uneven structure. Therefore, in the light-emitting device 200, the uneven structure 18, 74 can be easily formed by etching the entire upper surface of the n-type semiconductor layer 16 and the upper surface of the connecting semiconductor layer 70.

[0059] 3.2. Second Variation Next, a light-emitting device according to a second modified example of this embodiment will be described with reference to the drawings. Figure 6 is a schematic cross-sectional view showing a light-emitting device 300 according to a second modified example of this embodiment.

[0060] As shown in Figure 6, the light-emitting device 300 differs from the light-emitting device 100 described above in that it has a wiring layer 90.

[0061] The wiring layer 90 is provided on the n electrode 40. The wiring layer 90 is provided on the side of the n electrode 40 opposite to the connecting semiconductor layer 70. When viewed from the stacking direction, the wiring layer 90 overlaps with the connecting semiconductor layer 70. In the illustrated example, the wiring layer 90 is in contact with the side surface of the lens layer 50. In adjacent light-emitting elements 102, the lens layer 50 is not continuous. When viewed from the stacking direction, for example, the wiring layer 90 surrounds the convex lens portion 52.

[0062] The resistivity of the wiring layer 90 is lower than that of the n electrode 40. The thickness of the wiring layer 90 is greater than the thickness of the n electrode 40. The wiring layer 90 blocks the light generated by the light-emitting layer 14. The wiring layer 90 is, for example, an Al layer, a W layer, a Cu layer, or a laminate thereof.

[0063] The light-emitting device 300 has a wiring layer 90 provided on the opposite side of the n electrode 40 from the connecting semiconductor layer 70, and the resistivity of the wiring layer 90 is lower than that of the n electrode 40. Therefore, the amount of current injected into the light-emitting layer 14 can be increased in the light-emitting device 300, and the brightness can be improved.

[0064] In the light-emitting device 300, the wiring layer 90 blocks the light generated in the light-emitting layer 14. Therefore, crosstalk between adjacent light-emitting elements 102 can be reduced.

[0065] 4. Projector Next, the projector according to this embodiment will be described with reference to the drawings. Figure 7 is a schematic diagram showing the projector 700 according to this embodiment.

[0066] The projector 700 has, for example, a light-emitting device 100 as a light source. For convenience, the light-emitting device 100 is shown in a simplified form in Figure 7.

[0067] The projector 700 includes a housing (not shown) and red light source 100R, green light source 100G, and blue light source 100B located inside the housing, which emit red light, green light, and blue light, respectively. For convenience, the red light source 100R, green light source 100G, and blue light source 100B are shown in a simplified form in Figure 7.

[0068] The projector 700 further includes, for example, a first optical element 702R, a second optical element 702G, a third optical element 702B, a first optical modulator 704R, a second optical modulator 704G, a third optical modulator 704B, and a projection device 708, all of which are provided within the housing. The first optical modulator 704R, the second optical modulator 704G, and the third optical modulator 704B are, for example, transmissive liquid crystal light bulbs. The projection device 708 is, for example, a projection lens.

[0069] Light emitted from the red light source 100R is incident on the first optical element 702R. The light emitted from the red light source 100R is focused by the first optical element 702R. The first optical element 702R may have functions other than focusing. The second optical element 702G and the third optical element 702B may also have functions other than focusing.

[0070] Light focused by the first optical element 702R is incident on the first optical modulator 704R. The first optical modulator 704R modulates the incident light according to the image information. The projection device 708 then magnifies the image formed by the first optical modulator 704R and projects it onto the screen 710.

[0071] Light emitted from the green light source 100G enters the second optical element 702G. The light emitted from the green light source 100G is focused by the second optical element 702G.

[0072] The light focused by the second optical element 702G is incident on the second optical modulator 704G. The second optical modulator 704G modulates the incident light according to the image information. Then, the projection device 708 magnifies the image formed by the second optical modulator 704G and projects it onto the screen 710.

[0073] Light emitted from the blue light source 100B enters the third optical element 702B. The light emitted from the blue light source 100B is focused by the third optical element 702B.

[0074] The light focused by the third optical element 702B is incident on the third optical modulator 704B. The third optical modulator 704B modulates the incident light according to the image information. Then, the projection device 708 magnifies the image formed by the third optical modulator 704B and projects it onto the screen 710.

[0075] The projector 700 further includes, for example, a cross dichroic prism 706 that synthesizes the light emitted from the first light modulator 704R, the second light modulator 704G, and the third light modulator 704B and directs it to the projection device 708.

[0076] Three colored lights modulated by the first light modulator 704R, the second light modulator 704G, and the third light modulator 704B are incident on the cross dichroic prism 706. The cross dichroic prism 706 is formed by bonding together four right-angle prisms, and its inner surface is arranged with a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light. The three colored lights are combined by these dielectric multilayer films to form light that represents a color image. The combined light is then projected onto the screen 710 by the projection device 708, and an enlarged image is displayed.

[0077] Furthermore, the red light source 100R, the green light source 100G, and the blue light source 100B may directly form an image without using the first optical modulator 704R, the second optical modulator 704G, and the third optical modulator 704B by controlling the light-emitting device 100 as pixels of the image according to the image information. The projection device 708 may then enlarge the image formed by the red light source 100R, the green light source 100G, and the blue light source 100B and project it onto the screen 710.

[0078] Furthermore, while a transmissive liquid crystal light bulb was used as the light modulation device in the above example, other types of light bulbs may be used, as well as reflective light bulbs. Examples of such light bulbs include reflective liquid crystal light bulbs and digital micro mirror devices. The configuration of the projection device will be appropriately modified depending on the type of light bulb used.

[0079] Furthermore, this can also be applied to the light source device of a scanning type image display device, which has a scanning means that displays an image of a desired size on a display surface by scanning the light from the light source across a screen.

[0080] 5. Display Next, the display as an electronic device according to this embodiment will be described with reference to the drawings. Figure 8 is a schematic plan view showing the display 800 according to this embodiment. Figure 9 is a schematic cross-sectional view showing the display 800 according to this embodiment. In Figure 8, the X-axis and Y-axis are shown as two mutually orthogonal axes. Also, for convenience, the light-emitting device 100 is shown in a simplified manner in Figures 8 and 9.

[0081] The display 800 has, for example, a light-emitting device 100 as a light source. For convenience, the light-emitting device 100 is shown in a simplified form in Figures 17 and 18.

[0082] The display 800 is a display device that displays images. The images include those that display only text information. The display 800 is a self-emissive display. As shown in Figures 8 and 9, the display 800 includes, for example, a circuit board 810 and a heat sink 820.

[0083] The circuit board 810 is equipped with a drive circuit for driving the light-emitting device 100. The drive circuit is a circuit that includes, for example, a CMOS (Complementary Metal Oxide Semiconductor). The drive circuit drives the light-emitting device 100 based on input image information, for example. Although not shown in the diagram, a translucent substrate is placed on the circuit board 810 to protect the circuit board 810.

[0084] The circuit board 810 includes, for example, a display area 812, a data line drive circuit 814, a scan line drive circuit 816, and a control circuit 818.

[0085] The display area 812 is composed of multiple pixels P. In the illustrated example, the pixels P are arranged along the X and Y axes.

[0086] Although not shown in the diagram, the circuit board 810 is provided with multiple scan lines and multiple data lines. For example, the scan lines extend along the X-axis, and the data lines extend along the Y-axis. The scan lines are connected to the scan line drive circuit 816. The data lines are connected to the data line drive circuit 814. Pixels P are provided corresponding to the intersections of the scan lines and data lines.

[0087] One pixel P has, for example, one light-emitting element 102 and a pixel circuit (not shown). The pixel circuit has a switching transistor that functions as a switch for the pixel P, with the gate of the switching transistor connected to the scan line and either the source or drain connected to the data line. The data line drive circuit 814 and the scan line drive circuit 816 are circuits that control the driving of the light-emitting devices 100 that constitute the pixels P. The control circuit 818 controls the display of the image.

[0088] Image data is supplied to the control circuit 818 from the higher-level circuit. The control circuit 818 supplies various signals based on the image data to the data line drive circuit 814 and the scan line drive circuit 816.

[0089] When the scan line drive circuit 816 activates the scan signal and a scan line is selected, the switching transistor of the selected pixel P turns on. At this time, the data line drive circuit 814 supplies a data signal to the selected pixel P from the data line, causing the light-emitting device 100 of the selected pixel P to emit light in accordance with the data signal.

[0090] The heatsink 820 is in contact with the circuit board 810. The material of the heatsink 820 is, for example, a metal such as Cu or Al. The heatsink 820 dissipates the heat generated by the light-emitting device 100.

[0091] 6. Head-mounted display 6.1. Overall Structure Next, the head-mounted display as an electronic device according to this embodiment will be described with reference to the drawings. Figure 10 is a schematic perspective view showing the head-mounted display 900 according to this embodiment.

[0092] The head-mounted display 900, as shown in Figure 10, is a head-worn display with the appearance of eyeglasses. The head-mounted display 900 is worn on the observer's head. The observer is the user of the head-mounted display 900. The head-mounted display 900 allows the observer to see a virtual image and also allows them to see the external world through the display.

[0093] The head-mounted display 900 includes, for example, a first display unit 910a, a second display unit 910b, a frame 920, a first temple 930a, and a second temple 930b.

[0094] The first display unit 910a and the second display unit 910b display images. Specifically, the first display unit 910a displays a virtual image for the observer's right eye. The second display unit 910b displays a virtual image for the observer's left eye. The display units 910a and 910b include, for example, an image forming apparatus 911 and a light guide apparatus 915.

[0095] The image forming apparatus 911 forms image light. The image forming apparatus 911 includes, for example, an optical system such as a light source and a projection device, and an external member 912. The external member 912 houses the light source and the projection device.

[0096] The light guide device 915 covers the area in front of the observer's eyes. The light guide device 915 guides the image light formed by the image forming device 911, and also allows the observer to see the external light and the image light overlapping. Details of the image forming device 911 and the light guide device 915 will be described later.

[0097] Frame 920 supports the first display unit 910a and the second display unit 910b. Frame 920 surrounds, for example, the display units 910a and 910b. In the illustrated example, the first The image forming apparatus 911 of the display unit 910a is attached to one end of the frame 920. The image forming apparatus 911 of the second display unit 910b is attached to the other end of the frame 920.

[0098] The first temple 930a and the second temple 930b extend from the frame 920. In the illustrated example, the first temple 930a extends from one end of the frame 920, and the second temple 930b extends from the other end of the frame 920.

[0099] The first temple 930a and the second temple 930b are suspended over the observer's ears when the head-mounted display 900 is worn by the observer. The observer's head is positioned between the temples 930a and 930b.

[0100] 6.2. Image forming apparatus and light guide apparatus Figure 11 schematically shows the image forming apparatus 911 and light guide apparatus 915 of the first display unit 910a of the head-mounted display 900. The first display unit 910a and the second display unit 910b have basically the same configuration. Therefore, the following description of the first display unit 910a can also be applied to the second display unit 910b.

[0101] As shown in Figure 11, the image forming apparatus 911 includes, for example, a light-emitting device 100 as a light source, a light modulation device 913, and a projection device 914 for image formation. For convenience, the light-emitting device 100 is shown in a simplified form in Figure 11.

[0102] The light modulator 913 modulates the light incident from the light emitter 100 according to the image information and emits image light. The light modulator 913 is a transmissive liquid crystal light bulb. The light emitter 100 may be a self-emitting light emitter that emits light according to the input image information. In this case, the light modulator 913 is not provided.

[0103] The projection device 914 projects the image light emitted from the optical modulator 913 toward the light guide device 915. The projection device 914 is, for example, a projection lens. A lens with an axially symmetric plane as its lens surface may be used as the lens component of the projection device 914.

[0104] The light guide device 915 is precisely positioned relative to the projection device 914, for example, by being screwed to the lens barrel of the projection device 914. The light guide device 915 includes, for example, an image light guide member 916 for guiding image light and a transparent member 918 for viewing.

[0105] The image light guide member 916 receives image light emitted from the projection device 914. The image light guide member 916 is a prism that guides the image light towards the observer's eye. The image light that enters the image light guide member 916 is reflected repeatedly on the inner surface of the image light guide member 916, then reflected by the reflective layer 917 and emitted from the image light guide member 916. The image light emitted from the image light guide member 916 reaches the observer's eye. The reflective layer 917 is made of, for example, a metal or a dielectric multilayer film. The reflective layer 917 may also be a half-mirror.

[0106] The transparent member 918 is adjacent to the image light guide member 916. The transparent member 918 is fixed to the image light guide member 916. The outer surface of the transparent member 918 is continuous with, for example, the outer surface of the image light guide member 916. The transparent member 918 allows the observer to see through to the outside light. In addition to the function of guiding image light, the image light guide member 916 also has the function of allowing the observer to see through to the outside light. However, the head-mounted display 900 may also be configured so that the observer does not see through to the outside light.

[0107] The electronic devices to which the light-emitting device according to this embodiment is applied include displays and heads. The light-emitting device according to this embodiment is applicable to devices having a display device positioned close to the eye, such as personal computers, digital scopes, digital binoculars, digital still cameras, and video cameras, as well as mobile phones, smartphones, PDAs (Personal Digital Assistants), car navigation systems, in-vehicle displays, lighting, flexible displays, and the like.

[0108] 7. Experimental Examples A simulation was performed using a light-emitting element corresponding to the light-emitting element 102 shown in Figure 1, and the screen efficiency was calculated based on equation (1) described above. Light Tools from SYNOPSYS was used as the simulation software. Figure 12 is a schematic diagram of the model M used in the simulation. As shown in Figure 12, the light emitted from the light-emitting element E is reflected by the cross dichroic prism C and then projected onto the screen S by the projection lens R.

[0109] In the light-emitting element E, the diameter D1 at the upper end of the tapered portion was set to 6.8 μm or less. The diameter D3 of the light-emitting layer was set to 3 μm. The diameter D4 of the convex lens shown in Figure 1 was set to 6.8 μm. The size N in the stacking direction of the metal layer was set to 1 μm. The screen efficiency was calculated by varying the distance L between the upper end of the reflective portion and the upper end of the light-emitting layer shown in Figure 1, and the inclination angle θ of the side surface of the tapered portion with respect to the stacking direction.

[0110] Figure 13 is a table showing the simulation results. The screen efficiency in Figure 13 is mapped to a normalized value relative to the maximum value. In Figure 13, the range where the screen efficiency is 0.95 or higher is enclosed by a dashed line. Also in Figure 13, the case where the diameter of the upper end of the tapered section exceeds the value corresponding to the diameter D4 of the convex lens is indicated by "-".

[0111] As shown in Figure 13, it was found that the screen efficiency can be very high, above 0.95, in the range where the distance L is 2.5 μm or more, that is, in the range where the distance L is greater than 0.8 times the diameter of the light-emitting layer, and in the range where θ is between 5° and 33°.

[0112] The embodiments and variations described above are examples only and are not limited thereto. For example, each embodiment and each variation can be combined as appropriate.

[0113] The present invention includes configurations substantially identical to those described in the embodiments, for example, configurations with the same function, method, and results, or configurations with the same purpose and effect. Furthermore, the present invention includes configurations in which non-essential parts of the configurations described in the embodiments are replaced. Furthermore, the present invention includes configurations that produce the same effects or achieve the same purpose as those described in the embodiments. Finally, the present invention includes configurations that add known technology to the configurations described in the embodiments.

[0114] The following can be derived from the embodiments and modifications described above.

[0115] One embodiment of a light-emitting device is: A first laminate comprising: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type different from the first conductivity type; and a first light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; A second laminate comprising a third semiconductor layer having the first conductivity type, a fourth semiconductor layer having the second conductivity type, and a second light-emitting layer provided between the third semiconductor layer and the fourth semiconductor layer, Provided between the second semiconductor layer and the fourth semiconductor layer, and the second semiconductor layer and the A fifth semiconductor layer having the second conductivity type is in contact with the fourth semiconductor layer, A reflective portion provided between the first light-emitting layer and the second light-emitting layer, A first electrode provided on the side of the first semiconductor layer opposite to the first light-emitting layer, A second electrode provided on the side of the third semiconductor layer opposite to the second light-emitting layer, A common electrode is provided on the side of the second semiconductor layer opposite to the first light-emitting layer, on the side of the fourth semiconductor layer opposite to the second light-emitting layer, and on the side of the fifth semiconductor layer opposite to the reflective portion, which transmits light generated in the first light-emitting layer and light generated in the second light-emitting layer. It holds.

[0116] This light-emitting device can improve brightness.

[0117] In one embodiment of the light-emitting device, The surface of the second semiconductor layer in contact with the common electrode and the surface of the fourth semiconductor layer in contact with the common electrode have an uneven structure. The surface of the fifth semiconductor layer that is in contact with the common electrode may be a flat surface.

[0118] This light-emitting device can improve the efficiency of light extraction and further reduce crosstalk.

[0119] In one embodiment of the light-emitting device, The surface of the second semiconductor layer in contact with the common electrode, the surface of the fourth semiconductor layer in contact with the common electrode, and the surface of the fifth semiconductor layer in contact with the common electrode may have an uneven surface structure.

[0120] This light-emitting device makes it easy to form uneven structures.

[0121] In one embodiment of the light-emitting device, The first semiconductor layer, the second semiconductor layer, and the first light-emitting layer constitute a tapered portion. The diameter of the tapered portion at the end on the common electrode side is greater than the width of the tapered portion on the first electrode side. The refractive index of the reflective portion is lower than the refractive index of the first laminate. The reflective portion may be in contact with the side surface of the tapered portion.

[0122] According to this light-emitting device, the reflective section can reflect the light generated in the first light-emitting layer toward the common electrode.

[0123] In one embodiment of the light-emitting device, The inclination angle of the side surface of the tapered portion with respect to the stacking direction of the first semiconductor layer and the first light-emitting layer may be 5° or more and 33° or less.

[0124] This light-emitting device can improve screen efficiency.

[0125] In one embodiment of the light-emitting device, The distance in the stacking direction between the end of the reflective portion on the common electrode side and the end of the first light-emitting layer on the common electrode side may be greater than 0.8 times the diameter of the first light-emitting layer.

[0126] This light-emitting device can improve screen efficiency.

[0127] In one embodiment of the light-emitting device, The common electrode has a wiring layer provided on the side opposite to the fifth semiconductor layer, The resistivity of the wiring layer may be lower than the resistivity of the common electrode.

[0128] This light-emitting device allows for a greater increase in the amount of current injected into the first and second light-emitting layers.

[0129] In one embodiment of the light-emitting device, The wiring layer may block the light generated by the first light-emitting layer and the light generated by the second light-emitting layer.

[0130] This light-emitting device can reduce crosstalk.

[0131] One form of projector is, Having one embodiment of the light-emitting element

[0132] One aspect of electronic equipment is, Having one embodiment of the light-emitting element [Explanation of Symbols]

[0133] 10…Laminated structure, 11…Tapered portion, 11a…Side surface, 12…p-type semiconductor layer, 14…Light-emitting layer, 16…n-type semiconductor layer, 17…Contact surface, 18…Rubbered structure, 19…Convex portion, 20…p-electrode, 30…Metal layer, 40…n-electrode, 50…Lens layer, 52…Convex lens portion, 60…Reflective portion, 62…First layer, 64…Second layer, 70…Connecting semiconductor layer, 72…Contact surface, 74… Uneven structure, 76... protrusions, 80... growth substrate, 90... wiring layer, 100... light-emitting device, 100R... red light source, 100G... green light source, 100B... blue light source, 102... light-emitting element, 102a... first light-emitting element, 102b... second light-emitting element, 200, 300... light-emitting device, 700... projector, 702R... first optical element, 702G... second optical element, 702B... 3 Optical elements, 704R…First optical modulator, 704G…Second optical modulator, 704B…Third optical modulator, 706…Cross dichroic prism, 708…Projection device, 710…Screen, 800…Display, 810…Circuit board, 812…Display area, 814…Data line drive circuit, 816…Scan line drive circuit, 818…Control circuit, 820…Heat sink, 900…Head-mounted display, 910a…First display unit, 910b…Second display unit, 911…Image forming device, 912…External components, 913…Optical modulator, 914…Projection device, 915…Light guide device, 916…Image light guide member, 917…Reflective layer, 918…Transparent member, 920…Frame, 930a…First temple, 930b…Second temple

Claims

1. A first laminate comprising: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type different from the first conductivity type; and a first light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; A second laminate comprising a third semiconductor layer having the first conductivity type, a fourth semiconductor layer having the second conductivity type, and a second light-emitting layer provided between the third semiconductor layer and the fourth semiconductor layer, A fifth semiconductor layer is provided between the second semiconductor layer and the fourth semiconductor layer, is in contact with the second semiconductor layer and the fourth semiconductor layer, and has the second conductivity type, A reflective portion provided between the first light-emitting layer and the second light-emitting layer, A first electrode provided on the side of the first semiconductor layer opposite to the first light-emitting layer, A second electrode provided on the side of the third semiconductor layer opposite to the second light-emitting layer, A common electrode is provided on the side of the second semiconductor layer opposite to the first light-emitting layer, on the side of the fourth semiconductor layer opposite to the second light-emitting layer, and on the side of the fifth semiconductor layer opposite to the reflective portion, which transmits light generated in the first light-emitting layer and light generated in the second light-emitting layer. A light-emitting device having the following features.

2. In claim 1, The surface of the second semiconductor layer in contact with the common electrode and the surface of the fourth semiconductor layer in contact with the common electrode have an uneven structure. A light-emitting device wherein the surface of the fifth semiconductor layer in contact with the common electrode is a flat surface.

3. In claim 1, A light-emitting device wherein the surface of the second semiconductor layer in contact with the common electrode, the surface of the fourth semiconductor layer in contact with the common electrode, and the surface of the fifth semiconductor layer in contact with the common electrode have an uneven surface structure.

4. In claim 1, The first semiconductor layer, the second semiconductor layer, and the first light-emitting layer constitute a tapered portion. The diameter of the tapered portion at the end on the common electrode side is greater than the width of the diameter of the tapered portion on the first electrode side. The refractive index of the reflective portion is lower than the refractive index of the first laminate. The reflective portion is a light-emitting device that is in contact with the side surface of the tapered portion.

5. In claim 4, A light-emitting device in which the inclination angle of the side surface of the tapered portion with respect to the stacking direction of the first semiconductor layer and the first light-emitting layer is 5° or more and 33° or less.

6. In claim 5, A light-emitting device in which the distance in the stacking direction between the end of the reflecting portion on the common electrode side and the end of the first light-emitting layer on the common electrode side is greater than 0.8 times the diameter of the first light-emitting layer.

7. In claim 1, The common electrode has a wiring layer provided on the side opposite to the fifth semiconductor layer, A light-emitting device wherein the resistivity of the wiring layer is lower than the resistivity of the common electrode.

8. In claim 7, The wiring layer blocks the light generated by the first light-emitting layer and the light generated by the second light-emitting layer. A device that emits light, a light-emitting device.

9. A projector having a light-emitting device according to any one of claims 1 to 8.

10. An electronic device having a light-emitting device according to any one of claims 1 to 8.

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