Photoelectric conversion panel, method for manufacturing a photoelectric conversion panel, X-ray imaging apparatus

Abstract

To improve the conversion accuracy of photoelectric conversion panels. [Solution] This photoelectric conversion panel comprises a photodiode including a lower electrode layer and an upper electrode layer, and a first insulating film located on the photodiode, wherein the upper electrode layer has an electrode portion and an opening, and the first insulating film covers the opening.

Description

Technical Field

[0001] The present disclosure relates to a photoelectric conversion panel.

Background Art

[0002] [[ID= twelve]]Patent Document 1 discloses a photoelectric conversion panel obtained by laminating an n-type silicon layer, an i-type silicon layer, a p-type silicon layer, a transparent electrode layer, and a transparent insulating layer in this order.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Conventional photoelectric conversion panels have a problem that the photoelectric conversion accuracy decreases due to the transparent insulating layer floating from the transparent electrode layer.

Means for Solving the Problems

[0005] The photoelectric conversion panel according to one aspect of the present disclosure includes a photodiode including a lower electrode layer and an upper electrode layer, and a first insulating film located on the photodiode. The upper electrode layer has an electrode portion and an opening, and the first insulating film covers the opening. The photoelectric conversion panel according to one aspect of the present disclosure includes a photodiode including a lower electrode layer and an upper electrode layer, and a first insulating film located on the photodiode. The upper electrode layer has a plurality of electrically connected electrode portions adjacent to each other through a gap portion, and the first insulating film covers the gap portion.

Effects of the Invention

[0006] The photoelectric conversion accuracy is improved.

Brief Description of the Drawings

[0007] [Figure 1] This is a cross-sectional view showing an example of the configuration of a photoelectric conversion panel according to this embodiment. [Figure 2] This is a plan view showing an example configuration of a photoelectric conversion panel according to this embodiment. [Figure 3] This is a schematic diagram showing an example configuration of the photoelectric conversion device according to this embodiment. [Figure 4] This is a schematic diagram showing an example of the configuration of an X-ray imaging apparatus according to this embodiment. [Figure 5] This table shows the relationship between the structure of the upper electrode layer and the external quantum efficiency. [Figure 6] This is a flowchart showing a method for manufacturing a photoelectric conversion panel according to this embodiment. [Figure 7] This is a cross-sectional view showing a method for manufacturing a photoelectric conversion panel according to this embodiment. [Figure 8] This is a cross-sectional view showing a method for manufacturing a photoelectric conversion panel according to this embodiment. [Figure 9] This is a cross-sectional view showing a method for manufacturing a photoelectric conversion panel according to this embodiment. [Figure 10] This is a cross-sectional view showing a method for manufacturing a photoelectric conversion panel according to this embodiment. [Figure 11] This is a cross-sectional view showing a method for manufacturing a photoelectric conversion panel according to this embodiment. [Figure 12] This is a cross-sectional view showing an example of the configuration of a photoelectric conversion panel according to this embodiment. [Figure 13] This is a cross-sectional view showing an example of the configuration of a photoelectric conversion panel according to this embodiment. [Figure 14] This is a plan view showing an example configuration of a photoelectric conversion panel according to this embodiment. [Figure 15] Figures 13 and 14 are flowcharts showing the manufacturing method of the photoelectric conversion panel. [Modes for carrying out the invention]

[0008] Figure 1 is a cross-sectional view showing an example of the configuration of a photoelectric conversion panel according to this embodiment. Figure 2 is a plan view showing an example of the configuration of a photoelectric conversion panel according to this embodiment. As shown in Figures 1 and 2, the photoelectric conversion panel 7 according to this embodiment comprises a photodiode 8 including a lower electrode layer CA and an upper electrode layer AN, and a first insulating film Z1 located above the photodiode 8. The upper electrode layer AN has an electrode portion EB and an opening K, and the first insulating film Z1 covers the opening K. In this way, the electrode portion EB and the substrate of the upper electrode layer AN (for example, the third type layer DP of the photodiode D) are in direct contact within the opening K, so that the adhesion between the first insulating film Z1 and the upper electrode layer AN is improved. As a result, the first insulating film Z1 is less likely to lift away from the upper electrode layer AN, and the photoelectric conversion accuracy of the photoelectric conversion panel 7 is improved.

[0009] In the photoelectric conversion panel 7 shown in Figures 1 and 2, the following are arranged on the substrate ST in this order: scan line GL, gate insulating film 9, semiconductor layer SF, first and second conductive electrodes E1 and E2, lower passivation film 11, interlayer insulating film 12, first and second relay electrodes R1 and R2, upper passivation film 13, lower electrode layer CA, functional layer F containing semiconductor, upper electrode layer AN, first insulating film Z1, second insulating film Z2, planarization film 17, third insulating film Z3, bias line BL and data line SL, transparent electrodes PB and PS, fourth insulating film Z4, and protective film 19.

[0010] The photodiode 8 includes a lower electrode layer CA and an upper electrode layer AN, and a functional layer F located between the lower electrode layer CA and the upper electrode layer AN. The functional layer F is formed by stacking a first-type layer DN, a second-type layer DI, and a third-type layer DP in that order from the bottom. The first-type layer DN may be an N-type doped N-type semiconductor layer, the second-type layer DI may be an undoped true semiconductor layer, and the third-type layer DP may be a P-type doped P-type semiconductor layer. The functional layer F may be a semiconductor layer containing silicon.

[0011] A part of the scanning line GL (gate electrode), the semiconductor layer SF (channel), and the first and second conduction electrodes E1 and E2 constitute the transistor TR. The lower electrode layer CA may be connected to the first conduction electrode E1 via the first relay electrode R1 and the contact hole HC. The contact hole HC penetrates the lower passivation film 11 and the interlayer insulation film 12. The second conduction electrode E2 may be connected to the data line SL via the second relay electrode R2 and the contact hole HS. The contact hole HS penetrates the upper passivation film 13, the second insulation film Z2, the planarization film 17, and the third insulation film Z3. The semiconductor layer SF may contain an oxide semiconductor (for example, indium gallium zinc oxide).

[0012] The lower electrode layer CA may function as the cathode of the photodiode 8. The electrode portion EB of the upper electrode layer AN is electrically connected to the bias line BL via the contact hole HB. The contact hole HB penetrates the first insulation film Z1, the second insulation film Z2, the planarization film 17, and the third insulation film Z3. The electrode portion EB may function as the anode of the photodiode 8. The electrode portion EB of the upper electrode layer AN has light transmissivity. The transparent electrode PB may be located on the bias line BL, and the transparent electrode PS may be located on the data line SL. The electrode portion EB and the transparent electrodes PB and PS may be ITO (indium tin oxide) or IZO (indium zinc oxide).

[0013] The gate insulation film, the lower passivation film 11, and the upper passivation film 13 may be inorganic insulation films (for example, silicon nitride film, silicon oxide film). The first to fourth insulation films may be inorganic insulation films (for example, an insulation film containing at least one of silicon nitride and silicon oxide). The interlayer insulation film 12, the planarization film 17, and the protection film 19 may be organic insulation films (for example, a resin film such as polyimide). The bias line BL and the data line SL may be metal films (for example, containing at least one of titanium, aluminum, molybdenum, copper, and gold). The third type layer DP of the functional layer F may be a p-type silicon layer.

[0014] As shown in FIG. 1, in the photoelectric conversion panel 7, the first insulating film Z1 and the third-type layer DP of the functional layer F may contact at the opening K of the upper electrode layer AN. As shown in FIG. 2, the upper electrode layer AN may have an opening group KA including the opening K, and the opening group KA may be arranged in a matrix. As shown in FIGS. 1 and 2, the upper electrode layer AN includes a mesh region MA including a plurality of openings K and a solid electrode region BA not including the opening K, and the solid electrode region BA may be connected to the bias line BL via the contact hole HB. The solid electrode region BA may be smaller than the mesh region MA. The solid electrode region BA may be surrounded by the mesh region MA. As shown in FIG. 1, in the photoelectric conversion panel 7, the second insulating film Z2 may cover the side surface of the functional layer F (the first to third-type layers DN, DI, DP).

[0015] FIG. 3 is a schematic diagram showing a configuration example of the photoelectric conversion device according to the present embodiment. The photoelectric conversion device 2 according to the present embodiment includes a photoelectric conversion panel 7, a readout circuit RC connected to the data line SL, a scanning circuit SC connected to the scanning line GL, and a voltage supply circuit BC connected to the bias line BL. In the photoelectric conversion device 2, during the period when the scanning line GL is selected, a current corresponding to the light reception amount of the photodiode 8 is output to the readout circuit RC via the lower electrode layer CE and the transistor TR (the first conduction electrode E1, the semiconductor layer SF, and the second conduction electrode E2).

[0016] FIG. 4 is a schematic diagram showing a configuration example of the X-ray imaging device according to the present embodiment. The X-ray imaging device 4 according to the present embodiment includes the photoelectric conversion device 2 and the scintillator 3. The X-ray L transmitted through the subject is converted into light (scintillation light) in a predetermined wavelength range by the scintillator 3, and the scintillation light is incident on the photoelectric conversion device 2 (passing through the upper electrode layer AN of the photoelectric conversion panel 7 and reaching the functional layer F).

[0017] Figure 5 is a table showing the relationship between the structure of the upper electrode layer and the external quantum efficiency. As shown in Figure 5, for light with a wavelength of 550 [nm], the external quantum efficiency of mesh electrode A (aperture ratio 25 percent) and mesh electrode B (aperture ratio 50 percent) is no different from the external quantum efficiency of the planar electrode (aperture ratio 0 percent). In other words, it can be seen that even if an aperture K is provided in the upper electrode layer AN to reduce the floating of the first insulating film Z1, it does not have a substantial adverse effect on the conversion efficiency.

[0018] Figure 6 is a flowchart showing the method for manufacturing a photoelectric conversion panel according to this embodiment. Figures 7 to 11 are cross-sectional views showing the method for manufacturing a photoelectric conversion panel according to this embodiment. The following patterning may include a photolithography step. In S5, the scanning line GL is formed (metal film deposition and patterning). In S10, the gate insulating film 9 is formed (inorganic insulating film deposition and patterning). In S15, the semiconductor layer SF is formed (oxide semiconductor film deposition and patterning). In S20, the first and second conductive electrodes E1 and E2 are formed (metal film deposition and patterning).

[0019] In S25, the lower passivation film 11 is formed (deposition and patterning of an inorganic insulating film). In S30, the interlayer insulating film 12 is formed (deposition and patterning of an organic insulating film). In S35, the first and second relay electrodes R1 and R2 are formed (deposition and patterning of a metal film). In S40, the upper passivation film 13 is formed (deposition and patterning of an inorganic insulating film).

[0020] In S45, the lower electrode layer CE is formed (metal film deposition and patterning). In S50, the functional layer F (n-type layer, i-type layer, p-type layer) is deposited. In S55, the upper electrode layer AN is formed (transparent conductive film TL in Figure 7 is deposited and patterning).

[0021] As shown in Figure 8, in S60, the first insulating film Z1 is deposited (deposition of an inorganic insulating film), and in S65, the functional layer F and the first insulating film Z1 are patterned. At this stage, the side surface of the functional layer F is exposed. As shown in Figure 9, in S70, the second insulating film Z2 is deposited (deposition of an inorganic insulating film), and in S75, the planarization film 17 is formed (deposition and patterning of an organic insulating film).

[0022] As shown in Figure 10, in S80, etching of the first insulating film Z1 and the second insulating film Z2 is performed; in S82, the third insulating film Z3 is formed (deposition and patterning of inorganic insulating film); in S84, the wiring layer is formed (deposition of metal film); in S86, the transparent conductive layer is formed; and in S88, the data line SL, bias line BL, and transparent electrodes PB and PS are formed (patterning).

[0023] As shown in Figure 11, in S96, the fourth insulating film Z4 is formed (deposition and patterning of an inorganic insulating film), and in S98, the protective film 19 is formed (deposition and patterning of an organic insulating film).

[0024] In this embodiment, as shown in Figures 7 and 8, the process includes forming an upper electrode layer AN having an electrode portion EB and an opening K, and forming a first insulating film Z1 covering the opening K. As shown in Figure 8, the upper electrode layer AN is formed after the functional layer F is formed (metal film formation and patterning are performed), and the functional layer F is patterned after the upper electrode layer AN is formed. This reduces the risk of lateral deterioration and lateral short circuits of the functional layer F. As shown in Figure 9, after the functional layer F is patterned, a second insulating film Z2 is formed to cover the sides of the functional layer F, and a planarization film 17 is formed on the second insulating film Z2.

[0025] Although the adhesion between the ITO used in the upper electrode layer AN and the silicon nitride film is not high, if an acrylic resin film is used for the interlayer insulating film 12, high-temperature film formation is not possible, and a first insulating film Z1 (for example, a silicon nitride film) that is formed at low temperatures must be used. Furthermore, tensile stress (tensiles) is generated in the process after the formation of the first insulating film Z1 (formation of the planarization film 17 and the protective film 19). In other words, if a solid electrode is used as the anode layer and a silicon nitride film is formed on the solid electrode, a phenomenon called floating of the silicon nitride film may occur. When applied to an X-ray imaging device, floating of the silicon nitride film can cause a decrease in diode performance and variations in sensitivity between diodes. In this embodiment, by providing an opening K in the upper electrode layer AN (anode layer), the first insulating film Z1 is less likely to float away from the upper electrode layer AN, and these problems can be resolved.

[0026] Figure 12 is a cross-sectional view showing an example of the configuration of a photoelectric conversion panel according to this embodiment. As shown in Figure 12, the first insulating film Z1 may be a laminated structure including a lower film X and an upper film Y that are in contact with the functional layer F (third type layer DP). In this case, the lower film X of the first insulating film Z1 may be a silicon oxide film with higher adhesion to the third type layer DP (than a silicon nitride film), and the upper film Y may be a silicon nitride film with higher insulating performance (than a silicon oxide film). The lower film X may be an extremely thin film of about 10 nm. If a resin (heat resistance temperature of about 200°C) is used for the interlayer insulating film 12, the silicon oxide film of the lower film X is formed at a low temperature (below 200°C).

[0027] Figure 13 is a cross-sectional view showing an example of the configuration of a photoelectric conversion panel according to this embodiment. Figure 14 is a plan view showing an example of the configuration of a photoelectric conversion panel according to this embodiment. As shown in Figures 13 and 14, the photoelectric conversion panel 7 according to this embodiment comprises a photodiode 8 including a lower electrode layer CA and an upper electrode layer AN, and a first insulating film Z1 located above the photodiode 8. The upper electrode layer AN has a plurality of electrically connected electrode portions EB adjacent to each other via a gap portion J, and the first insulating film Z1 covers the gap portion J.

[0028] In this way, the electrode portion EB and the substrate of the upper electrode layer AN (for example, the third type layer DP of the photodiode D) come into direct contact within the gap J, thereby increasing the adhesion between the first insulating film Z1 and the upper electrode layer AN. As a result, the first insulating film Z1 is less likely to lift away from the upper electrode layer AN, improving the photoelectric conversion accuracy of the photoelectric conversion panel 7. As shown in Figure 14, multiple electrode portions EB may be arranged in a matrix.

[0029] In Figures 13 and 14, the first insulating film Z1 and the third type layer DP of the functional layer F are in contact at the gap J. The photoelectric conversion panel 7 in Figures 13 and 14 is located above the multiple electrode sections EB and includes a transparent electrode PC that is connected to the multiple electrode sections EB. Specifically, the multiple electrode sections EB are connected to the transparent electrode PC via contact holes HE, and the multiple electrode sections EB and the bias wire BL are electrically connected by contact between the transparent electrode PC and the bias wire BL. The transparent electrode PC may be a translucent metal oxide such as ITO.

[0030] Figure 15 is a flowchart showing the method for manufacturing the photoelectric conversion panel shown in Figures 13 and 14. In this embodiment, as shown in Figures 13 to 15, the method includes the steps of forming an upper electrode layer AN having a plurality of electrically connected electrode portions EB adjacent to each other via a gap portion J (S55), and forming a first insulating film Z1 covering the gap portion J (S60-S80).

[0031] In S84, the wiring layer is deposited (metal film deposition), and in S87, the data line SL and bias line BL are formed (metal film patterning). In S90, the transparent conductive layer is deposited, and in S92, the transparent electrode PC is formed (transparent conductive layer patterning).

[0032] In S96, the fourth insulating film Z4 is formed (deposition and patterning of an inorganic insulating film), and in S98, the protective film 19 is formed (deposition and patterning of an organic insulating film).

[0033] The foregoing disclosures are for illustrative and explanatory purposes only, and not for limitation. Many variations will be obvious to those skilled in the art based on these examples and descriptions, and these variations are also included in the embodiments.

[0034] [summary] The photoelectric conversion panel of Embodiment 1 comprises a photodiode including a lower electrode layer and an upper electrode layer, and a first insulating film located on the photodiode, wherein the upper electrode layer has an electrode portion and an opening, and the first insulating film covers the opening.

[0035] The photoelectric conversion panel of the second form comprises a photodiode including a lower electrode layer and an upper electrode layer, and a first insulating film located on the photodiode. The upper electrode layer has a plurality of electrically connected electrode portions adjacent to each other via a gap, and the first insulating film covers the gap.

[0036] In the photoelectric conversion panel of Embodiment 3, the photodiode is located between the lower electrode and the upper electrode and has a functional layer containing a semiconductor, in which a first type layer, a second type layer and a third type layer are stacked in order from the bottom, and the first insulating film and the third type layer are in contact at the opening.

[0037] In the photoelectric conversion panel of form 4, in form 2, the photodiode is located between the lower electrode layer and the upper electrode layer and has a functional layer containing a semiconductor, in which a first type layer, a second type layer and a third type layer are stacked in order from the bottom layer, and the first insulating film and the third type layer are in contact at the gap.

[0038] In the photoelectric conversion panel of form 5, as in form 1, the upper electrode layer has a group of openings including the opening, and the group of openings is arranged in a matrix.

[0039] The photoelectric conversion panel of form 6, in form 2, is located above the plurality of electrode sections and includes a transparent electrode that is connected to the plurality of electrode sections.

[0040] The photoelectric conversion panel of form 7 includes a bias line electrically connected to the electrode portion in form 1, and the upper electrode layer includes a mesh region including the opening and a solid electrode region not including the opening, and the solid electrode region is connected to the bias line via a contact hole.

[0041] The photoelectric conversion panel of form 8 is the photoelectric conversion panel according to claim 6, wherein in form 6, a bias wire is electrically connected to the plurality of electrode portions, and the bias wire is in contact with the transparent electrode.

[0042] The photoelectric conversion panel of form 9 includes a planarization film located above the first insulating film, in any one of forms 1 to 8.

[0043] The photoelectric conversion panel of form 10 includes a second insulating film covering the side surface of the functional layer in any one of forms 3 to 4.

[0044] In the photoelectric conversion panel of form 11, in any one of forms 1 to 10, the first insulating film is a silicon nitride film.

[0045] In the photoelectric conversion panel of form 12, in any one of forms 3 to 4, the first insulating film has a laminated structure including a lower film and an upper film that are in contact with the functional layer.

[0046] In the photoelectric conversion panel of form 13, the lower film is a silicon oxide film and the upper film is a silicon oxide film, as in form 12.

[0047] In the photoelectric conversion panel of form 14, in any one of forms 3 to 4, the third type layer is a p-type silicon layer.

[0048] In the photoelectric conversion panel of form 15, in any one of forms 1 to 14, the lower electrode layer is the cathode layer and the upper electrode layer is the anode layer.

[0049] The X-ray imaging apparatus of form 16 is equipped with one of the photoelectric conversion panels of forms 1 to 15.

[0050] The method for manufacturing a photoelectric conversion panel of Embodiment 17 comprises a photodiode including a lower electrode layer, an upper electrode layer, and a functional layer, and a first insulating film located on the photodiode, and includes the steps of forming the upper electrode layer having an electrode portion and an opening, and forming the first insulating film covering the opening.

[0051] A method for manufacturing a photoelectric conversion panel of Embodiment 18 comprises a photodiode including a lower electrode layer, an upper electrode layer, and a functional layer, and a first insulating film located on the photodiode, and includes the steps of forming the upper electrode layer having a plurality of electrically connected electrode portions adjacent to each other via a gap, and forming the first insulating film covering the gap.

[0052] The manufacturing method for the photoelectric conversion panel of form 19 is as follows: in any one of forms 17 to 18, the functional layer is formed first, then the upper electrode layer is formed, and then the functional layer is patterned after the upper electrode layer has been formed.

[0053] The manufacturing method for the photoelectric conversion panel of Embodiment 20 involves, in Embodiment 19, forming a second insulating film that covers the side surface of the functional layer after patterning the functional layer.

[0054] In the method for manufacturing the photoelectric conversion panel of Embodiment 21, a planarization film is formed on the second insulating film in Embodiment 20. [Explanation of Symbols]

[0055] 2. Photoelectric converter 3. Scintillator 4 X-ray imaging device 7. Photoelectric conversion panel 8 Photodiodes K opening F Functional Layer J Gap Section CE lower electrode layer AN upper electrode layer EB electrode part Z1 First insulating film Z2 Second insulating film

Claims

1. The photodiode comprises a lower electrode layer and an upper electrode layer, and a first insulating film located on the photodiode. The upper electrode layer has an electrode portion and an opening, A photoelectric conversion panel in which the first insulating film covers the opening.

2. The photodiode comprises a lower electrode layer and an upper electrode layer, and a first insulating film located on the photodiode. The upper electrode layer has a plurality of electrically connected electrode portions adjacent to each other via a gap, A photoelectric conversion panel in which the first insulating film covers the gap portion.

3. The photodiode is located between the lower electrode layer and the upper electrode layer and has a functional layer containing a semiconductor. In the aforementioned functional layer, the first type layer, the second type layer, and the third type layer are stacked in order from the bottom. The photoelectric conversion panel according to claim 1, wherein the first insulating film and the third type layer are in contact at the opening.

4. The photodiode is located between the lower electrode layer and the upper electrode layer and has a functional layer containing a semiconductor. In the aforementioned functional layer, the first type layer, the second type layer, and the third type layer are stacked in order from the bottom. The photoelectric conversion panel according to claim 2, wherein the first insulating film and the third type layer are in contact in the gap portion.

5. The upper electrode layer has a group of openings including the opening, The photoelectric conversion panel according to claim 1, wherein the group of openings is arranged in a matrix.

6. The photoelectric conversion panel according to claim 2, further comprising a transparent electrode located above the plurality of electrode portions and connected to the plurality of electrode portions.

7. The electrode portion is equipped with a bias wire that is electrically connected to it. The upper electrode layer includes a mesh region containing the opening and a solid electrode region not containing the opening. The photoelectric conversion panel according to claim 1, wherein the solid electrode region is connected to the bias line via a contact hole.

8. The system includes a bias wire that is electrically connected to the plurality of electrode sections, The photoelectric conversion panel according to claim 6, wherein the bias wire is in contact with the transparent electrode.

9. A photoelectric conversion panel according to any one of claims 1 to 8, comprising a planarization film located above the first insulating film.

10. The photoelectric conversion panel according to claim 3 or 4, further comprising a second insulating film covering the side surface of the functional layer.

11. The photoelectric conversion panel according to any one of claims 1 to 8, wherein the first insulating film is a silicon nitride film.

12. The photoelectric conversion panel according to claim 3 or 4, wherein the first insulating film has a laminated structure including a lower film and an upper film in contact with the functional layer.

13. The photoelectric conversion panel according to claim 12, wherein the lower film is a silicon oxide film and the upper film is a silicon oxide film.

14. The photoelectric conversion panel according to claim 3 or 4, wherein the third layer is a p-type silicon layer.

15. The photoelectric conversion panel according to any one of claims 1 to 8, wherein the lower electrode layer is a cathode layer and the upper electrode layer is an anode layer.

16. An X-ray imaging apparatus comprising a photoelectric conversion panel according to any one of claims 1 to 15.

17. A method for manufacturing a photoelectric conversion panel comprising a photodiode including a lower electrode layer, an upper electrode layer, and a functional layer, and a first insulating film located on the photodiode, A step of forming the upper electrode layer having an electrode portion and an opening, A method for manufacturing a photoelectric conversion panel, comprising the step of forming a first insulating film that covers the opening.

18. A method for manufacturing a photoelectric conversion panel comprising a photodiode including a lower electrode layer, an upper electrode layer, and a functional layer, and a first insulating film located on the photodiode, The process of forming the upper electrode layer having multiple electrically connected electrode portions adjacent to each other via a gap, A method for manufacturing a photoelectric conversion panel, comprising the step of forming the first insulating film that covers the gap portion.

19. After forming the functional layer, the upper electrode layer is formed. A method for manufacturing a photoelectric conversion panel according to claim 17 or 18, wherein the functional layer is patterned after the upper electrode layer is formed.

20. A method for manufacturing a photoelectric conversion panel according to claim 19, wherein after patterning the functional layer, a second insulating film is formed to cover the side surface of the functional layer.

21. A method for manufacturing a photoelectric conversion panel according to claim 20, wherein a planarization film is formed on the second insulating film.

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