Indication device

Abstract

To provide a high-definition or high-resolution display device. [Solution] A display device having a first light-emitting device and a second light-emitting device. The light-emitting device comprises a first pixel electrode, a first hole injection layer, a first hole transport layer, and a first The light-emitting layer, the first electron transport layer, the second electron transport layer, and the common electrode are stacked in this order. The second light-emitting device includes a second pixel electrode, a second hole injection layer, and a second hole A transport layer, a second light-emitting layer, a third electron transport layer, a second electron transport layer, and a common electrode, They are stacked in this order. The first light-emitting device and the second light-emitting device are different from each other. It has the function of emitting colored light. The second electron transport layer is at least on the side of the first pixel electrode. The material covers the side surface of the second pixel electrode, the side surface of the first light-emitting layer, and the side surface of the second light-emitting layer.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a method for manufacturing a display device. One aspect of the present invention relates to a display device, display model Regarding Joule and electronic equipment.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. For example, semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, Input devices (e.g., touch sensors), input / output devices (e.g., touch panels), and Examples of these driving methods, or methods for manufacturing them, can be given. [Background technology]

[0003] In recent years, display devices have been expected to have applications in a variety of fields. For example, applications of large-scale display devices. Examples include household television equipment (also called television or television receiver), and Digital signage (electronic billboards), and PID (Pu Examples include public information displays. Also, mobile information Development of devices such as smartphones and tablet devices equipped with touch panels is progressing. It is being done.

[0004] Furthermore, there is a demand for higher resolution display devices. As for devices that require high-resolution display devices... For example, virtual reality (VR), augmented reality (AR) Substitutional Reality (SR) Devices for Reality and Mixed Reality (MR) are It is being actively developed.

[0005] As a display device, for example, a light-emitting device (also referred to as a light-emitting element) having a light-emitting device has been developed. It is. A light-emitting device (also referred to as an EL device or an EL element) that utilizes the electroluminescence (hereinafter referred to as EL) phenomenon is thin. It is easy to reduce weight, can respond quickly to an input signal, and has characteristics such as being drivable using a DC constant voltage power supply, and is applied to a display device. Patent Document 1 discloses a display device for VR using an organic EL device (also referred to as an organic EL element).

[0006]

Prior Art Documents

Patent Documents

[0007]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0008] When manufacturing a display device having a plurality of organic EL devices with different emission colors in the light-emitting layer, it is necessary to form the light-emitting layers with different emission colors in an island shape.

[0009] For example, an island-shaped light-emitting layer can be formed by a vacuum evaporation method using a metal mask (also referred to as a shadow mask). However, during evaporation, the contour of the layer may become blurred and the thickness at the end may become thin. That is, the thickness of the island-shaped light-emitting layer may vary depending on the location. In addition, when manufacturing a large-sized, high-resolution, or high-definition display device, there is a concern that the manufacturing yield may be low due to the low dimensional accuracy of the metal mask and deformation due to heat or the like. ​​​​​​​​

[0010] Furthermore, when manufacturing a display device using a vacuum deposition method with a metal mask, multiple manufacturing devices are required. There are challenges, such as the need for multiple lines. For example, the metal mask needs to be cleaned regularly. Therefore, prepare at least two production lines and maintain one of the production lines. During production, it is necessary to use the other manufacturing equipment, and considering mass production, multiple manufacturing equipment is required. A production line is required. Therefore, the initial investment required to introduce manufacturing equipment will be very large. These are some of the challenges.

[0011] One aspect of the present invention aims to provide a method for manufacturing a high-resolution display device. One aspect of the invention aims to provide a method for manufacturing a high-resolution display device. One aspect of the invention aims to provide a method for manufacturing a large-scale display device. One aspect of this invention aims to provide a method for manufacturing a highly reliable display device. One aspect of the present invention aims to provide a method for manufacturing a display device with a high yield.

[0012] One aspect of the present invention aims to provide a high-resolution display device. One of the objectives of this invention is to provide a high-resolution display device. One aspect of this invention is a large One of the objectives of the present invention is to provide a display device. One of the objectives is to provide a suitable location.

[0013] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention is It is not necessarily required to resolve all of these issues. Specifications, drawings, invoices. It is possible to extract other issues from the descriptions in the sections. [Means for solving the problem]

[0014] One aspect of the present invention is a display device having a first light-emitting device and a second light-emitting device. The first light-emitting device includes a first pixel electrode and a first hole injection layer on the first pixel electrode, A first hole transport layer on a first hole injection layer, a first light-emitting layer on the first hole transport layer, and a first A first electron transport layer on the light-emitting layer, a second electron transport layer on the first electron transport layer, and a second electron The second light-emitting device has an electron injection layer on a electron transport layer and a common electrode on the electron injection layer. This includes a second pixel electrode, a second hole injection layer on the second pixel electrode, and on the second hole injection layer A second hole transport layer, a second light-emitting layer on the second hole transport layer, and a third electric layer on the second light-emitting layer A sub-transport layer, a second electron transport layer on the third electron transport layer, and electron injection on the second electron transport layer It has a layer and a common electrode on the electron injection layer. First light-emitting device and second light-emitting device These have the function of emitting light of different colors from each other. The second electron transport layer has at least the The side surface of the first pixel electrode, the side surface of the second pixel electrode, the side surface of the first light-emitting layer, and the second light-emitting layer Cover the sides.

[0015] The above-mentioned display device preferably has a protective layer on the common electrode.

[0016] Preferably, the first light-emitting device and the second light-emitting device are provided on an insulating layer. The insulating layer may have recesses. A second electron transport layer may be in contact with the recesses.

[0017] There may be a gap between the second electron transport layer and the electron injection layer. Or, the second electron An insulator may be present between the electron transport layer and the electron injection layer.

[0018] One aspect of the present invention has a display device having any of the above configurations, and a flexible printed circuit board A board (Flexible Printed Circuit, hereinafter referred to as FPC) or This is equipped with connectors such as TCP (Tape Carrier Package). Display module, or COG (Chip On Glass) method or COF (C Display modules etc. with integrated circuits (ICs) mounted using methods such as hip-on-film. This is the display module.

[0019] One aspect of the present invention includes the above-mentioned display module, housing, battery, camera, speaker, and An electronic device having at least one microphone.

[0020] One aspect of the present invention involves forming an insulating layer, forming a conductive film on the insulating layer, and applying a first positive film on the conductive film. A hole injection layer is formed, and a first hole transport layer is formed on the first hole injection layer, and the first hole transport A first light-emitting layer is formed on the layer, and a first electron transport layer is formed on the first light-emitting layer, and the first A first sacrificial layer is formed on the electron transport layer, and a first hole injection layer, a first hole transport layer, and a first The light-emitting layer, the first electron transport layer, and the first sacrificial layer are processed to expose a portion of the conductive film, A second hole injection layer is formed on the sacrificial layer and the conductive film of the first layer, and a second hole injection layer is formed on the second hole injection layer. A hole transport layer is formed, and a second light-emitting layer is formed on the second hole transport layer, and on the second light-emitting layer A second electron transport layer is formed on the second electron transport layer, and a second sacrificial layer is formed on the second electron transport layer. The hole injection layer, the second hole transport layer, the second light emission layer, the second electron transport layer, and the second sacrificial layer The conductive film is processed to expose a portion of it, and the first and second sacrificial layers are used as a hard mask. By processing the conductive film, the first pixel electrode overlaps with the first sacrificial layer, and the second sacrificial layer A second overlapping pixel electrode is formed, the first sacrificial layer and the second sacrificial layer are removed, and the first electron transport A third electron transport layer is formed on the transport layer and on the second electron transport layer, and on the third electron transport layer, This is a method for manufacturing a display device, which involves forming an electron injection layer and then forming a common electrode on the electron injection layer. .

[0021] Furthermore, it is preferable to form a protective layer on the common electrode.

[0022] In the method for manufacturing the above-described display device, the third electron transport layer comprises at least the first pixel electrode To cover the sides, the sides of the second pixel electrode, the sides of the first light-emitting layer, and the sides of the second light-emitting layer. It is preferable that it be provided in [location].

[0023] In the method for manufacturing the above-described display device, before forming the electron injection layer, the recess of the third electron transport layer The gap may be filled with insulating material.

[0024] In the processing step of the conductive film, recesses may be formed in the insulating layer. [Effects of the Invention]

[0025] According to one aspect of the present invention, a method for manufacturing a high-resolution display device can be provided. According to one aspect of the present invention This provides a method for manufacturing a high-resolution display device. According to one aspect of the present invention, a large display device A method for manufacturing a device can be provided. According to one aspect of the present invention, a method for manufacturing a highly reliable display device is provided. It is possible to provide this. According to one aspect of the present invention, a method for manufacturing a display device with a high yield can be provided.

[0026] According to one aspect of the present invention, a high-resolution display device can be provided. According to one aspect of the present invention, high resolution A large-scale display device can be provided. According to one aspect of the present invention, a large-scale display device can be provided. In one aspect, a highly reliable display device can be provided.

[0027] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention is It is not necessarily required to have all of these effects. It is possible to extract effects other than those listed above. [Brief explanation of the drawing]

[0028] [Figure 1] Figure 1A is a top view showing an example of a display device. Figure 1B is a cross-sectional view showing an example of a display device. [Figure 2] Figures 2A to 2C are top views showing an example of a display device. [Figure 3] Figures 3A to 3C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 4] Figures 4A to 4C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 5] Figures 5A to 5C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 6] Figures 6A to 6C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 7] Figures 7A to 7C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 8] Figures 8A and 8B are perspective views showing an example of a display module. [Figure 9] Figure 9 is a cross-sectional view showing an example of a display device. [Figure 10] Figure 10 is a cross-sectional view showing an example of a display device. [Figure 11] Figure 11 is a cross-sectional view showing an example of a display device. [Figure 12] Figures 12A to 12D show examples of the configuration of a light-emitting device. [Figure 13]Figures 13A and 13B show examples of electronic devices. [Figure 14] Figures 14A and 14B show examples of electronic devices. [Figure 15] Figures 15A and 15B show examples of electronic devices. [Figure 16] Figures 16A to 16D show examples of electronic devices. [Figure 17] Figures 17A to 17F show examples of electronic devices. [Modes for carrying out the invention]

[0029] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. It will be easily understood by those skilled in the art to obtain this. Therefore, the present invention is as shown in the embodiments below. The interpretation is not limited to the content stated herein.

[0030] In the configuration of the invention described below, the same part or part having a similar function is used. The same symbol is used consistently across different drawings, and explanations of its repetition are omitted. When referring to a function, the same hatch pattern may be used, and a specific symbol may not be assigned.

[0031] Furthermore, the position, size, and extent of each component shown in the drawings are, for the sake of ease of understanding, actually The location, size, and range may not be described. Therefore, the disclosed invention is not always Furthermore, it is not limited to the location, size, scope, etc., disclosed in the drawings.

[0032] In this specification, the ordinal numbers "1st" and "2nd" are used for convenience only. This limits the number of components or the order of the components (for example, process order or stacking order). It is not the case that the ordinal numbers attached to the constituent elements in certain parts of this specification and In other parts of the text or claims, the ordinal numbers attached to the component do not match. There are cases where this is not the case. Also, the words "membrane" and "layer" can be used interchangeably in some cases. These can be interchanged depending on the situation. For example, the term "conductive layer" It is possible to change the term to "conductive film." Or, for example, "insulating film" It is possible to change the term "insulating layer" to "insulating layer".

[0033] In this specification, etc., metal mask, or FMM (Fine Metal Mask, High-Definition Metal Mask) Devices fabricated using a metal mask are called MM (metal mask) structured devices. In some cases, this may occur. Also, in this specification, etc., if a metal mask or FMM is used Devices manufactured without a metal mask are sometimes referred to as MML (Metal Maskless) devices. be.

[0034] (Embodiment 1) In this embodiment, Figures 1 to 7 are used to describe a display device according to one aspect of the present invention and a method for manufacturing the same. I will explain.

[0035] In a method for manufacturing a display device according to one aspect of the present invention, a conductive film is formed, and a light-emitting device that emits light of a first color is formed. A first layer containing the layer (which can be called an EL layer, or a part of an EL layer) is formed on one surface. After that, a first sacrificial layer is formed on the first layer. Then, a first resist is formed on the first sacrificial layer. A mask is formed, and the first layer and the first sacrificial layer are processed using the first resist mask. This forms an island-like first layer. Subsequently, similar to the first layer, a second color of light is emitted. The second layer containing the optical layer (which can be called the EL layer, or a part of the EL layer) is the second sacrifice The layers are formed in an island-like manner using the sacrificial layer and the second resist mask.

[0036] Thus, in the method for manufacturing a display device according to one embodiment of the present invention, the island-shaped EL layer is made of fine metal Instead of being formed using a mask, the EL layer is deposited on one surface and then processed to create the shape. Therefore, island-shaped EL layers can be formed with a uniform thickness. By providing a protective layer, damage to the EL layer during the manufacturing process of the display device is reduced, and the light emission This can improve the reliability of the vise.

[0037] After forming EL layers that emit light of each color, the sacrificial layer remaining on each EL layer is used as a hard mask. By processing the conductive film described above, pixel electrodes can be formed. Since there is no need to separately prepare a mask for forming the shape, the manufacturing cost of the display device is reduced. This is possible. Furthermore, an insulating layer covering the ends of the pixel electrodes is provided between the pixel electrodes and the EL layer. Because there is no need to do so, the spacing between adjacent light-emitting devices can be made extremely narrow. This allows for higher resolution or higher definition of display devices.

[0038] Here, the first layer and the second layer each include at least one light-emitting layer, preferably multiple layers. It consists of layers. Specifically, it is preferable to have one or more layers on the light-emitting layer. By having other layers between the sacrificial layer and the light-emitting layer, the light-emitting layer is exposed to the outermost surface during the manufacturing process of the display device. This suppresses the process and reduces the damage the light-emitting layer receives. The reliability of the vice can be increased. Therefore, the first layer and the second layer are, It is preferable to have a light-emitting layer and a carrier transport layer on the light-emitting layer.

[0039] Furthermore, in light-emitting devices that emit light of different colors, all layers that make up the EL layer There is no need to create different layers, and some layers can be formed in the same process. One aspect of the present invention In the method for manufacturing the display device, after forming some of the layers constituting the EL layer in island-like structures for each color, The sacrificial layer is removed, and the remaining layers that make up the EL layer, along with the common electrode (which can also be called the upper electrode), are each This is formed in common in color light-emitting devices. For example, a carrier injection layer and a common electrode are formed for each color. It can be formed in common in the light-emitting devices. On the other hand, the carrier injection layer is the EL layer In the middle, it is often a layer with relatively high conductivity. Therefore, the carrier injection layer is island-like. By contacting the side surface of a portion of the formed EL layer, or the side surface of the pixel electrode, the light-emitting device There is a risk of the chair short-circuiting. Furthermore, the carrier injection layer is arranged in an island-like configuration, and common electrodes are provided in different colors. Even when formed in common across light-emitting devices, the common electrode and the side surface of the EL layer, or Contact with the side of the pixel electrode could cause a short circuit in the light-emitting device.

[0040] Therefore, in one aspect of the present invention, a display device is provided with an island-shaped light-emitting layer and light-emitting devices of each color that are common to each other. Between the carrier injection layer and the island-shaped first carrier transport layer, and light-emitting devices of each color, It has two layers, including a second carrier transport layer that is provided in common to all of them.

[0041] As a result, some layers of the island-shaped EL layer and the pixel electrodes are connected to the carrier injection layer. Contact can be suppressed. Therefore, short circuits in light-emitting devices can be suppressed. This can improve the reliability of optical devices.

[0042] A display device according to one aspect of the present invention includes a pixel electrode that functions as an anode, and arranged in this order on the pixel electrode. The following are island-shaped layers: a hole injection layer, a hole transport layer, a light-emitting layer, and a first electron transport layer. And, covering the pixel electrode, hole injection layer, hole transport layer, light-emitting layer, and first electron transport layer A second electron transport layer is provided, and an electron injection layer is provided on the second electron transport layer, and electron injection It has a common electrode provided on the layer and functioning as a cathode.

[0043] Alternatively, a display device according to one aspect of the present invention includes a pixel electrode that functions as a cathode, and on the pixel electrode The following are arranged in this order, each island-shaped: electron injection layer, electron transport layer, light emission layer, and the first positive The pore transport layer, pixel electrodes, electron injection layer, electron transport layer, light-emitting layer, and the first hole transport layer are covered. A second hole transport layer provided in such a manner, and a hole injection layer provided on the second hole transport layer It has a common electrode provided on the hole injection layer and functioning as an anode.

[0044] By adopting this configuration, a display device with high detail or resolution and high reliability can be created. It can be manufactured.

[0045] [Example of a display device configuration] Figures 1A and 1B show a display device according to one embodiment of the present invention.

[0046] Figure 1A shows a top view of the display device 100. The display device 100 has multiple pixels 110 matrix It has a display section arranged in a cubic shape and a connection section 140 on the outside of the display section. One pixel 1 10 is composed of three sub-pixels: sub-pixels 110a, 110b, and 110c. Connection part Part 140 can also be called the cathode contact section.

[0047] The top surface shape of the subpixel shown in Figure 1A corresponds to the top surface shape of the light-emitting region.

[0048] Furthermore, the circuit layout constituting the subpixel is not limited to the subpixel range shown in Figure 1A, and It may be located outside of it. For example, the transistor of subpixel 110a is shown in Figure 1. It may be located within the range of subpixel 110b shown in A, and some or all of it may be subpixel 110a It is acceptable for it to be located outside the range.

[0049] Figure 1A shows the aperture ratio (size, size of light-emitting area) of subpixels 110a, 110b, and 110c. This also represents (or can be said to represent) equally or substantially equally, but one aspect of the present invention is not limited thereto. The aperture ratios of the sub-pixels 110a, 110b, and 110c can be determined as appropriate. The aperture ratios of the sub-pixels 110a, 110b, and 110c may each be different, and there are two of them. The above may be equal or approximately equal.

[0050] In Figure 1A, subpixels of different colors are arranged in the X direction, and subpixels of the same color are arranged in the Y direction. An example of arrangement in the direction is shown. Note that subpixels of different colors are arranged in the Y direction. Furthermore, subpixels of the same color may be arranged side by side in the X direction.

[0051] Figure 1A shows an example in which the connection part 140 is located below the display part in a top view, but is not particularly limited. It is not possible. The connection part 140 is located on the upper, right, left, and lower sides of the display unit, as viewed from above. It is sufficient that it is provided in a location, and it may also be provided so as to surround all four sides of the display unit.

[0052] Figure 1B shows a cross-sectional view between the dashed line X1 and X2 in Figure 1A.

[0053] As shown in Figure 1B, the display device 100 has a light-emitting device on a layer 101 that includes a transistor. Sections 130a, 130b, and 130c are provided, and a protective layer is provided to cover these light-emitting devices. Layers 131 and 132 are provided. On the protective layer 132, a resin layer 119 is provided on the substrate 12 Zeros are glued together.

[0054] A display device according to one aspect of the present invention emits light in the direction opposite to the substrate on which the light-emitting device is formed. In the top-emission type, the light-emitting device is formed on the substrate side. Bottom emission type (which emits light from the bottom), double emission type (which emits light from both sides) Any of the following types (alternative emission type) may be used.

[0055] In the layer 101 containing the transistors, for example, multiple transistors are provided on the substrate, A laminated structure can be applied in which an insulating layer is provided to cover the transistors. The layer 101 containing the lampistor may have a recess between adjacent light-emitting devices. For example, even if a recess is provided in the insulating layer located on the outermost surface of layer 101 containing the transistor Good. An example of the configuration of layer 101 including the transistor will be described later in Embodiment 2.

[0056] Light-emitting devices 130a, 130b, and 130c each emit light of a different color. Devices 130a, 130b, and 130c are, for example, red (R), green (G), and blue (B). It is preferable that the combination emits three colors of light.

[0057] The light-emitting device has an EL layer between a pair of electrodes. In this specification, one of the pair of electrodes is It is sometimes referred to as a pixel electrode, and the other as a common electrode.

[0058] Of the pair of electrodes in the light-emitting device, one electrode functions as the anode, and the other electrode is It functions as a cathode. Below, the pixel electrode functions as an anode and the common electrode functions as a cathode. Let's explain using an example of a case where it is possible.

[0059] The light-emitting device 130a has a pixel electrode 111a on a layer 101 containing a transistor, and a pixel electrode The island-shaped first layer 113a on pole 111a, and the upper and side surfaces of the island-shaped first layer 113a are covered. A fourth electron transport layer 116, an electron injection layer 114 on the fourth electron transport layer 116, and an electron injection layer The first layer 113a has a common electrode 115 on the inlet layer 114. The first hole injection layer 181a and the first hole transport layer 182 on the first hole injection layer 181a a, the first light-emitting layer 183a on the first hole transport layer 182a, and on the first light-emitting layer 183a The light-emitting device 130a has a first electron transport layer 184a. 13a. The fourth electron transport layer 116 and the electron injection layer 114 are collectively referred to as the EL layer. It is possible.

[0060] The light-emitting device 130b has a pixel electrode 111b on a layer 101 containing a transistor, and a pixel electrode The island-shaped second layer 113b on pole 111b, and the upper and side surfaces of the island-shaped second layer 113b are covered. A fourth electron transport layer 116, an electron injection layer 114 on the fourth electron transport layer 116, and an electron injection layer The second layer 113b has a common electrode 115 on the first layer 114. The second hole injection layer 181b and the second hole transport layer 182 on the second hole injection layer 181b b, the second light-emitting layer 183b on the second hole transport layer 182b, and on the second light-emitting layer 183b The light-emitting device 130b has a second electron transport layer 184b. 13b. The fourth electron transport layer 116 and the electron injection layer 114 are collectively referred to as the EL layer. It is possible.

[0061] The light-emitting device 130c has a pixel electrode 111c on a layer 101 containing a transistor, and a pixel electrode The island-like third layer 113c on pole 111c, and the upper and side surfaces of the island-like third layer 113c are covered. A fourth electron transport layer 116, an electron injection layer 114 on the fourth electron transport layer 116, and an electron injection layer The third layer 113c has a common electrode 115 on the inlet layer 114. The third hole injection layer 181c and the third hole transport layer 182 on the third hole injection layer 181c c, the third light-emitting layer 183c on the third hole transport layer 182c, and on the third light-emitting layer 183c The light-emitting device 130c has a third electron transport layer 184c. 13c, the fourth electron transport layer 116, and the electron injection layer 114 are collectively referred to as the EL layer. It is possible.

[0062] The common electrode shared by each color light-emitting device is connected to a conductive layer provided in the connection part 140 and an electrical electrode. They are connected electrically.

[0063] Of the pixel electrodes and common electrodes, the electrode that extracts light uses a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light. It's nice.

[0064] The materials used to form the pair of electrodes (pixel electrode and common electrode) of a light-emitting device include metals and alloys. Electrically conductive compounds and mixtures thereof can be used as appropriate. Specifically, Indium tin oxide (also known as In-Sn oxide or ITO), In-Si-Sn oxide (Also known as ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn acid Aluminum alloys such as alloys of aluminum, nickel, and lanthanum (Al-Ni-La) Alloys containing um (aluminum alloys), and alloys of silver, palladium, and copper (Ag-Pd- Examples include Cu (also written as APC). Others include aluminum (Al) and titanium (Ti). Chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni ), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn) Molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), Gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), etc. Metals and alloys containing them in appropriate combinations can also be used. Other examples include those mentioned above. Elements belonging to Group 1 or Group 2 of the periodic table that do not contain (e.g., lithium (Li), cesium) Cs (C), Calcium (Ca), Strontium (Sr), Europium (Eu) , rare earth metals such as ytterbium (Yb) and alloys containing these in appropriate combinations, Rafen and the like can be used.

[0065] It is preferable that the light-emitting device employs a microcavity structure. Therefore, one of the pair of electrodes in the light-emitting device is transparent to visible light. It is preferable that the other side has a reflective electrode (semitransparent / semireflective electrode), and the other side is visible It is preferable to have electrodes that are reflective to light (reflective electrodes). By having a microcavity structure, the light emitted from the light-emitting layer is made to resonate between the two electrodes. It is possible to intensify the light emitted from the light-emitting device.

[0066] Furthermore, semi-transmissive / semi-reflective electrodes are electrodes that transmit visible light (transparent electrodes) and reflective electrodes. It can be made into a laminated structure (also known as).

[0067] The light transmittance of the transparent electrode shall be 40% or more. For example, the light-emitting device shall emit visible light (wavelength It is preferable to use electrodes with a transmittance of 40% or more for light (between 400 nm and less than 750 nm). The reflectance of the semi-transparent / semi-reflective electrode for visible light is 10% to 95%, preferably 3%. The visible light reflectance of the reflective electrode should be between 0% and 80%. The resistivity should be between 70% and 100%. Furthermore, the resistivity of these electrodes should be 1 × 10⁻⁶. -2 A value of Ωcm or less is preferable.

[0068] The first layer 113a, the second layer 113b, and the third layer 113c are each arranged in an island-like manner. The first layer 113a, the second layer 113b, and the third layer 113c are, respectively , has an emissive layer. The first layer 113a, the second layer 113b, and the third layer 113c are, It is preferable that each component has a light-emitting layer that emits light of a different color.

[0069] The luminescent layer is a layer containing a luminescent substance. The luminescent layer may have one or more types of luminescent substances. This is possible. The luminescent materials include blue, purple, bluish-purple, green, yellowish-green, yellow, orange, and red. Substances that exhibit emission colors such as the above are used as appropriate. In addition, substances that emit near-infrared light are used as emission materials. You can also use this.

[0070] Examples of luminescent materials include fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence (ATF). tivated delayed fluorescence (TADF) materials, quantum do Examples include batting materials.

[0071] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, and triphenylene derivatives. fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran Derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidi Examples include phenanthrene derivatives, naphthalene derivatives, and naphthalene derivatives.

[0072] Examples of phosphorescent materials include 4H-triazole skeletons, 1H-triazole skeletons, and imida. Organometallic complexes having a zole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton. (Especially iridium complexes), ligands of phenylpyridine derivatives having electron-withdrawing groups Examples include metallochemical complexes (especially iridium complexes), platinum complexes, and rare earth metal complexes.

[0073] The luminescent layer consists of one or more organic compounds (host material) in addition to the luminescent substance (guest material). It may contain (materials, assisting materials, etc.). One or more types of organic compounds may be correct One or both of pore-transporting materials and electron-transporting materials can be used. Alternatively, multiple types of organic compounds, such as bipolar materials or TADF materials, may be used. .

[0074] The light-emitting layer is, for example, a combination of a phosphorescent material and a hole-transporting material that readily forms an excitation complex. It is preferable to have a material and an electron transport material. By having such a configuration, ExTET (Excipl) is the energy transfer from an excited complex to a light-emitting material (phosphorescent material). Efficiently obtain luminescence using ex-triplet energy transfer. It is possible to emit light that overlaps with the wavelength of the lowest-energy absorption band of the luminescent material. By selecting combinations that form excitation complexes, energy transfer becomes smoother. This allows for efficient emission of light. This configuration enables high efficiency and low power consumption of the light-emitting device. It can achieve both pressure drive and long life simultaneously.

[0075] The first layer 113a, the second layer 113b, and the third layer 113c are layers other than the light-emitting layer. Therefore, materials with high hole injection properties, materials with high hole transport properties, hole blocking materials, and materials with high electron transport properties. Materials with high electron injection, materials with high electron injection, electron blocking materials, or bipolar materials (electron injection The system may further include a layer containing a substance with high transportability and hole transportability.

[0076] Light-emitting devices can use either low-molecular-weight compounds or high-molecular-weight compounds, inorganic It may contain compounds. Each layer constituting the light-emitting device is deposited by a vapor deposition method (vacuum deposition). It can be formed by methods such as (including) transfer, printing, inkjet, and coating. ru.

[0077] For example, the first layer 113a, the second layer 113b, and the third layer 113c are, respectively, Hole injection layer, hole transport layer, hole blocking layer, electron blocking layer, electron transport layer, and electron injection It may have one or more layers.

[0078] Among the EL layers, the layers commonly formed in each color light-emitting device are the hole injection layer and the hole One or more of the following: transport layer, hole blocking layer, electron blocking layer, electron transport layer, and electron injection layer. This can be applied.

[0079] In the display device 100 shown in Figure 1B, the first layer 113a is the first light-emitting layer 183a, It has a first electron transport layer 184a on the first light-emitting layer 183a, and similarly a second layer 1 13b is a second light-emitting layer 183b and a second electron transport layer 184 on the second light-emitting layer 183b. b and the third layer 113c is a third light-emitting layer 183c and on the third light-emitting layer 183c It has a third electron transport layer 184c, and this allows during the manufacturing process of the display device 100 This suppresses the exposure of the light-emitting layer to the outermost surface, thereby reducing the damage the light-emitting layer receives. This allows for increased reliability of light-emitting devices.

[0080] The first layer 113a, the second layer 113b, and the third layer 113c are part of the fourth electron transport layer 1 Covered by 16, the electron injection layer 114 and common electrode are on the fourth electron transport layer 116. 115 is provided. This allows the electron injection layer 114 or the common electrode 115 to be used in the pixel Electrodes 111a, 111b, 111c, and the first layer 113a, the second layer 113b, and This prevents contact with any side of the third layer 113c and prevents a short circuit in the light-emitting device. It can be suppressed.

[0081] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and materials with high hole injection capabilities are used. It is a layer containing. Materials with high hole implantation properties include aromatic amine compounds and hole transport properties. Examples include composite materials containing a material and an acceptor material (electron-accepting material).

[0082] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 1 × 10⁻¹⁶. -6 cm 2 A material having a hole mobility of / Vs or higher is preferred. Note that hole mobility is higher than electron mobility. Other materials with high hole transport properties can also be used. For example, π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, Hole transport properties of furan derivatives, aromatic amines (compounds with an aromatic amine skeleton), etc. Materials with high quality are preferred.

[0083] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron transport material. The electron transport material is 1 × 10⁻¹⁶. -6 cm 2 A material having an electron mobility of / Vs or higher is preferred. Other materials with high electron transport properties can also be used. For example, metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, oxazo In addition to metal complexes with a thiazole skeleton and metal complexes with a thiazole skeleton, oxadiazole Derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives Conductors, phenanthroline derivatives, quinoline derivatives having quinoline ligands, benzoquinol Dibenzoquinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyri Zin derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds Materials with high electron transport properties, such as aromatic compounds, can be used.

[0084] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is made of a material with high electron injection properties. It is a layer containing electrons. Materials with high electron injection include alkali metals, alkaline earth metals, and These compounds can be used. Materials with high electron injection properties include electron transport materials. Composite materials containing both a material and a donor material (electron-donating material) can also be used.

[0085] Examples of electron injection layers include lithium, cesium, lithium fluoride (LiF), and fluoride. Cesium (CsF), calcium fluoride (CaF2), 8-(quinolinolato)lithium ( Abbreviation: Liq), 2-(2-pyridyl)phenolatritium (Abbreviation: LiPP), 2-( 2-pyridyl)-3-pyridinolatritium (abbreviation: LiPPy), 4-phenyl-2- (2-pyridyl)phenolatritium (abbreviation: LiPPP), lithium oxide (LiO x ), alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof It can be used.

[0086] Alternatively, an electron transport material may be used as the electron injection layer. For example, a lone pair of electrons Therefore, compounds having electron-deficient heteroaromatic rings can be used as electron transport materials. Specifically, pyridine rings, diazine rings (pyrimidine rings, pyrazine rings, pyridazine rings), Compounds having at least one liadin ring can be used.

[0087] Furthermore, the lowest unoccupied orbital (LUMO) of organic compounds that have lone pairs of electrons (LOMO) (Cupid Molecular Orbital) -3.6 eV or higher -2.3 It is preferable that the value is less than or equal to eV. In addition, generally, CV (cyclic voltammetry) and photoelectron Spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, etc., can be used to determine the highest occupied orbital (HOM) of organic compounds. O: Highest Occupied Molecular Orbital) level The LUMO level can be estimated.

[0088] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2, 9-Bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (Abbreviation: NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine ( Abbreviation: HATNA), 2,4,6-tris[3'-(pyridine-3-yl)biphenyl- 3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), etc., have lone pairs of electrons It can be used in organic compounds that possess the following properties. Furthermore, NBPhen is different from BPhen in that it is It has a high glass transition temperature (Tg) and excellent heat resistance.

[0089] It is preferable to have protective layers 131 and 132 on the light-emitting devices 130a, 130b, and 130c. It is possible to improve the reliability of the light-emitting device by providing protective layers 131 and 132. Cut.

[0090] The conductivity of protective layers 131 and 132 is not required. Protective layers 131 and 132 can be insulating films, semiconductors, etc. A conductive film and at least one of the conductive films can be used.

[0091] The protective layers 131 and 132 have inorganic films, which prevents oxidation of the common electrode 115 and reduces light emission. This prevents impurities (such as moisture and oxygen) from entering devices 130a, 130b, and 130c. By controlling and suppressing the degradation of light-emitting devices, the reliability of display devices can be improved.

[0092] The protective layers 131 and 132 include, for example, an oxide insulating film, a nitride insulating film, an oxide-nitride insulating film, and nitrogen Inorganic insulating films such as silicic oxide insulating films can be used. Aluminum oxide film, gallium oxide film, germanium oxide film, yttrium oxide film , zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and oxidation Examples include tantalum films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples include aluminum films. Examples of oxidative nitride insulating films include silicon oxidative nitride films and aluminum oxidative nitride films. Examples include nium films. Examples of nitride oxide insulating films include silicon nitride oxide films and aluminium nitride oxide films. Examples include luminium films.

[0093] In this specification, an oxidized nitride is defined as a compound whose composition contains more oxygen than nitrogen. This refers to materials that are present in large quantities, and nitride oxides, in terms of their composition, have a higher nitrogen content than oxygen. It refers to the material.

[0094] The protective layers 131 and 132 preferably each have a nitride insulating film or a nitride oxide insulating film. It is preferable to have a nitride insulating film.

[0095] Furthermore, protective layers 131 and 132 contain In-Sn oxide (also known as ITO) and In-Zn acid Indium gallium zinc oxide (I Inorganic films containing n-Ga-Zn oxide (also known as IGZO) can also be used. The inorganic film is preferably highly resistive, specifically, it is more resistive than the common electrode 115. It is preferable that it contains nitrogen. The inorganic film may further contain nitrogen.

[0096] When the light emitted from the light-emitting device is extracted via protective layers 131 and 132, protective layers 131 and 1 32 is preferably highly transparent to visible light. For example, ITO, IGZO, and Aluminum oxide is an inorganic material with high transmittance to visible light, therefore it is preferred. It seems so.

[0097] Examples of protective layers 131 and 132 include an aluminum oxide film and an aluminum oxide film. A silicon nitride film and a laminated structure, or an aluminum oxide film and an aluminum oxide film A laminated structure of the IGZO film on top can be used. This prevents impurities (such as water and oxygen) from entering the EL layer.

[0098] Furthermore, protective layers 131 and 132 may have an organic film. For example, protective layer 132 is It may have both an organic film and an inorganic film.

[0099] Different film deposition methods may be used for protective layer 131 and protective layer 132. Specifically, atomic layer stack A protective layer 13 was created using the Atomic Layer Deposition (ALD) method. Form 1 and then form a protective layer 132 using a sputtering method.

[0100] Each end of the pixel electrodes 111a, 111b, and 111c is covered by an insulating layer. No. Therefore, the spacing between adjacent light-emitting devices can be made extremely narrow. This allows for the creation of a high-definition or high-resolution display device.

[0101] In this embodiment, the light-emitting layer for each color is provided in an island-like manner for each light-emitting device. It is manufactured using the so-called side-by-side painting method (SBS (Side By Side) method). Therefore, compared to a configuration that combines a white light-emitting device and a color filter, This enables the creation of display devices with high extraction efficiency. Furthermore, by applying a single-structure light-emitting device... Therefore, compared to a configuration using a tandem structure light-emitting device, a display device with a lower drive voltage is possible. This can be achieved. In addition, by using the SBS method, a white light-emitting device and a color filter can be used. Compared to configurations combining and tandem structures, and configurations using light-emitting devices, This enables the creation of low-power display devices.

[0102] The display device of this embodiment can reduce the distance between light-emitting devices. Specifically, The distance between light-emitting devices is 1 μm or less, preferably 500 nm or less, and more preferably , 200nm or less, 100nm or less, 90nm or less, 70nm or less, 50nm or less, 30 It can be less than or equal to nm, less than or equal to 20 nm, less than or equal to 15 nm, or less than or equal to 10 nm. Then, the distance between the side of the first layer 113a and the side of the second layer 113b, or the second layer 1 The distance between the side surface of 13b and the side surface of the third layer 113c is 1 μm or less in a region, preferably Having a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less. To possess.

[0103] A light-shielding layer may be provided on the surface of the substrate 120 facing the resin layer 119. Also, on the outside of the substrate 120 Various optical components can be placed in it. Optical components include polarizers, phase difference plates, and light expanding plates. Examples include diffused layers (such as diffusion films), anti-reflective layers, and light-gathering films. Also, substrates. The outside of the 120 has an antistatic coating to suppress the adhesion of dust and a water-repellent coating to make it difficult for dirt to adhere. A film, a hard coat film to suppress the occurrence of scratches during use, an impact-absorbing layer, etc., may be provided.

[0104] The substrate 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc. These can be used. The substrate on the side that extracts light from the light-emitting device has a light-transmitting material. A flexible material is used. Using a flexible material for the substrate 120 enhances the flexibility of the display device. This enables the realization of a flexible display. In addition, a polarizing plate can be used as the substrate 120. You may use it.

[0105] The substrate 120 is made of polyethylene terephthalate (PET) or polyethylene naphthalate. Polyester resins such as PEN, polyacrylonitrile resin, acrylic resin, poly Mid resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyether Sulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane Resins, cycloolefin resins, polystyrene resins, polyamide-imide resins, polyurethanes Resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetra Fluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. are used. This is possible. The substrate 120 may be made of glass of a thickness that is flexible.

[0106] Furthermore, when a circular polarizing plate is superimposed on a display device, the substrate of the display device must have high optical isotropy. It is preferable to use a substrate. A substrate with high optical isotropy has low birefringence (low birefringence). (It could also be called a sai.)

[0107] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less. More preferably 20 nm or less, and even more preferably 10 nm or less.

[0108] Examples of films with high optical isotropy include triacetylcellulose (TAC, cellulose tri Acetate film, cycloolefin polymer (COP) film, cyclo Examples include olefin copolymer (COC) films and acrylic films.

[0109] Furthermore, when using film as the substrate, the film absorbs water, causing wrinkles in the display panel. Shape changes such as the occurrence of [unclear] may occur. Therefore, the substrate should be made of [unclear] with low water absorption. It is preferable to use a film. For example, it is preferable to use a film with a water absorption rate of 1% or less. Furthermore, it is more preferable to use a film with a concentration of 0.1% or less, and a film with a concentration of 0.01% or less. It is even more preferable to use [this].

[0110] The resin layer 119 can be a photocuring adhesive such as an ultraviolet curing type, a reaction curing adhesive, or a thermocuring type Various types of curing adhesives, such as adhesives and anaerobic adhesives, can be used. For example, epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, Imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin Examples include EVA (ethylene vinyl acetate) resin, etc. In particular, epoxy resins and other permeable materials. Materials with low moisture content are preferred. A two-component resin may also be used. Adhesive sheets are also available. You may also use the following:

[0111] Furthermore, a void may exist between the fourth electron transport layer 116 and the electron injection layer 114. Figure 1B shows an example in which an insulating material 134 is filled in the area that could become a void. The distance between the light-emitting devices, the thickness of the fourth electron transport layer 116, and the electron injection layer 11 Depending on the thickness of 4, the gap may not be formed, and filling with the insulating material 134 may not be necessary. In this case, the space between adjacent light-emitting devices is the fourth electron transport layer 116 and the electron injection layer 1 The structure will be filled with at least one of the 14.

[0112] The voids are, for example, filled with air, nitrogen, oxygen, carbon dioxide, and Group 18 elements (typically, helicopters). One of the following (e.g., um, neon, argon, xenon, krypton) It has multiple voids. Furthermore, the voids contain, for example, the gas used during the deposition of the electron injection layer 114. In some cases, the voids may decrease. For example, when forming an electron injection layer 114 by vacuum deposition, the voids may decrease. The atmosphere may be under pressure. Furthermore, if gas is present in the void, gas chromatography may be used. Identification of gases can be performed according to laws and regulations.

[0113] Furthermore, if the refractive index of the void is lower than that of the fourth electron transport layer 116, the first layer 113 a. Light emitted from the second layer 113b or the third layer 113c reaches the fourth electron transport layer It is reflected at the interface between 116 and the void. As a result, the first layer 113a, the second layer 113b, Alternatively, light emitted from the third layer 113c may be incident on an adjacent pixel (or sub-pixel). This can suppress the mixing of different colored lights. Therefore, the display quality of the display device can be improved.

[0114] Furthermore, the materials for the insulating material 134 that can fill the gaps include organic insulating materials and One or both of the inorganic insulating materials can be used. The insulator 134 may be a solid substance, At least one of a gel-like substance and a liquid substance can be used.

[0115] Examples of organic insulating materials include acrylic resin, epoxy resin, polyimide resin, and polyamide resin. , polyimideamide resins, polysiloxane resins, benzocyclobutene resins, and pheno Examples include resins. Furthermore, various resins that can be used in the above resin layer 119 can be used. That's fine.

[0116] Inorganic insulating materials include oxide insulating materials, nitride insulating materials, oxidogenic nitride insulating materials, and nitride oxide Insulating materials are one example. In addition, insulating materials that can be used in the protective layers 131 and 132 are also available. Materials may be used.

[0117] In addition to the gate, source, and drain of a transistor, various wirings and electrical components that make up the display device. Materials that can be used for conductive layers such as electrodes include aluminum, titanium, chromium, and nickel. Copper, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten Examples include metals such as tungsten, and alloys in which such metals are the main component. The film containing the material can be used as a single layer or as a multilayer structure.

[0118] Furthermore, examples of conductive materials that are translucent include indium oxide, indium tin oxide, and indium Conductive oxides or graphite such as zinc oxide, zinc oxide, and zinc oxide containing gallium You can use gold, silver, platinum, magnesium, nickel, or tungsten. Metal materials such as chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, Alternatively, an alloy material containing the metal material can be used. Or, a nitride of the metal material. (For example, titanium nitride) may be used. Also, metal materials or alloy materials (and When using these nitrides, it is preferable to make them thin enough to be translucent. Furthermore, the laminated film of the above materials can be used as a conductive layer. For example, silver and magnesium. Using a laminated film of an alloy or indium tin oxide can enhance conductivity, which is preferable. These can also be used for conductive layers such as various wirings and electrodes constituting a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting devices.

[0119] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0120] [Example of manufacturing method of display device] Next, an example of the manufacturing method of a display device will be described using FIGS. 2 to 7. FIGS. 2A to 2C are top views showing the manufacturing method of the display device. FIGS. 3A to 3C show side-by-side cross-sectional views between the dashed-dotted line X1-X2 and between the dashed-dotted line Y1-Y2 in FIG. 1A. The same applies to FIGS. 4 to 7 as in FIG. 3.

[0121] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed using sputtering, chemical vapor deposition (CVD), vacuum evaporation, pulsed laser deposition (PLD), ALD, etc. Examples of CVD methods include plasma enhanced chemical vapor deposition (PECVD) and thermal CVD. Also, one type of thermal CVD method is metal organic chemical vapor deposition (MOCVD).

[0122] ​​​​​​​​​​​​​​In addition, the thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device are spin-coated , dip, spray coating, inkjet, dispense, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, knife coating and can be formed by methods such as etc.

[0123] In particular, for the fabrication of light-emitting devices, vacuum processes such as evaporation methods, and solution processes such as spin coating method, inkjet method, etc. can be used. As the evaporation method, physical evaporation methods (PVD methods) such as sputtering method, ion plating method, ion beam evaporation method, molecular beam evaporation method, vacuum evaporation method, etc., and chemical vapor deposition method (CVD method), etc. can be mentioned. In particular, for the functional layers (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, etc.) contained in the EL layer , they can be formed by methods such as evaporation method (vacuum evaporation method, etc.), coating method (dip coating method, die coating method, bar coating method , spin coating method, spray coating method, etc.), printing method (inkjet method, screen (stencil printing) method, offset (lithographic printing) method, flexo (letterpress printing) method, gravure method, or , microcontact method, etc.).

[0124] In addition, when processing the thin films that make up the display device, methods such as photolithography can be used . Or, the thin film may be processed by methods such as nanoimprint method, sandblasting method, lift-off method, etc. Also, an island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0125] Typically, there are two representative methods for photolithography. One is the processed ​​​​A resist mask is formed on a thin film, and the thin film is processed by etching or the like, and the resist This is a method for removing the mask. Another method involves forming a photosensitive thin film and then exposing it to light. This method involves developing the film and then processing it into a desired shape.

[0126] In photolithography, the light used for exposure is, for example, the i-line (wavelength 365 nm), g The light used is a linear light (wavelength 436 nm), an h-line (wavelength 405 nm), or a mixture of these. This can be done by using ultraviolet light, KrF laser light, or ArF laser light, etc. This can also be done. Alternatively, exposure may be performed using immersion lithography. Furthermore, the light used for exposure may be... Extreme ultraviolet (EUV) light, or X-rays It may be used. Alternatively, an electron beam can be used instead of the light used for exposure. (Extreme) Using ultraviolet light, X-rays, or electron beams is preferable because it allows for extremely fine processing. Furthermore, when exposure is performed by scanning a beam such as an electron beam, photomass The "ku" is unnecessary.

[0127] Thin film etching can be performed using dry etching, wet etching, or sandblasting. These can be used.

[0128] First, as shown in Figure 3A, a conductive film 111 is formed on the layer 101 containing the transistor. .

[0129] Then, on the conductive film 111, a first hole injection layer 181A, a first hole transport layer 182A, and The first light-emitting layer 183A and the first electron transport layer 184A are formed in this order, and the first electron transport A first sacrificial layer 118A is formed on layer 184A. As shown in Figure 3A, between Y1 and Y2 In the cross-sectional view, the end portions of the first positive hole injection layer 181A, the first positive hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A on the connection portion 140 side are located inside the end portion of the first sacrificial layer 11 8A. For example, by using a mask for defining a film formation area (also referred to as an area mask or a rough metal mask, etc., distinguished from a fine metal mask), the area formed by the first positive hole injection layer 181A, the first positive hole transport layer 182A, the first light-emitting layer 18 3A, and the first electron transport layer 184A and the first sacrificial layer 118A can be changed. In one aspect of the present invention, a light-emitting device is formed using a resist mask, but by combining it with the area mask as described above, a light-emitting device can be manufactured through a relatively simple process. The conductive film 111 is a layer that is later processed to become the pixel electrodes 111a, 111b, 111c, and the conductive layer 123. Therefore, the configuration applicable to the pixel electrodes described above can be applied to the conductive film 111. For the formation of the conductive film 111, for example, a sputtering method or

[0130] a vacuum evaporation method can be used.

[0131] The first positive hole injection layer 181A, the first positive hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A are each a layer that later becomes the first positive hole injection layer 181a, the first positive hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a. Therefore, the configurations applicable to the first positive hole injection layer 181a, the first positive hole transport layer 182a ​. First hole injection layer 181A, first hole transport layer 182A, first light-emitting layer 183A, and The first electron transport layer 184A is produced by the following methods: vapor deposition (including vacuum deposition), transfer, and printing. It can be formed by methods such as inkjet printing and coating. 181A, first hole transport layer 182A, first light-emitting layer 183A, and first electron transport layer 1 Each of the 84A components may be formed using a premixed material.

[0132] The first sacrificial layer 118A includes the first hole injection layer 181A, the first hole transport layer 182A, and the The first light-emitting layer 183A, the first electron transport layer 184A, and the second layer formed in a later step The hole injection layer 181B, the second hole transport layer 182B, the second light-emitting layer 183B, and the second Electron transport layer 184B, third hole injection layer 181C, third hole transport layer 182C, third A film with high resistance to processing conditions, such as the light layer 183C and the third electron transport layer 184C. In general, a film with a high etching selectivity is used. The first sacrificial layer 118A has a single-layer structure. However, a laminated structure is also acceptable.

[0133] For the formation of the first sacrificial layer 118A, for example, sputtering, ALD (thermal ALD), (Including the PEALD method) or vacuum deposition method can be used. Note that damage to the EL layer may occur. A formation method with minimal bleed is preferred, and ALD or vacuum deposition methods are preferred over sputtering. It is preferable to use this to form the first sacrificial layer 118A.

[0134] For the first sacrificial layer 118A, it is preferable to use a film that can be removed by wet etching. It seems that using the wet etching method is more effective than using the dry etching method. Then, during processing of the first sacrificial layer 118A, the first hole injection layer 181A and the first hole transport layer 1 Reduces damage to 82A, the first light-emitting layer 183A, and the first electron transport layer 184A. It is possible.

[0135] In the processing steps for various sacrificial layers in the method for manufacturing the display device of this embodiment, the EL layer is constructed Each of the constituent layers (hole injection layer, hole transport layer, light-emitting layer, and electron transport layer, etc.) is difficult to process. Furthermore, in the processing steps of each layer constituting the EL layer, various sacrificial layers are less likely to be processed. This is desirable. Regarding the material and processing method of the sacrificial layer, and the processing method of the EL layer, these It is advisable to make your selection with this in mind.

[0136] The first sacrificial layer 118A may be, for example, a metal film, an alloy film, a metal oxide film, a semiconductor film, or a non-metallic film. Inorganic films such as thermal insulating films can be used.

[0137] The first sacrificial layer 118A contains, for example, gold, silver, platinum, magnesium, nickel, tungsten. Chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, t Metallic materials such as thorium, zirconium, and tantalum, or alloy materials containing such metallic materials You can use the fee.

[0138] Furthermore, the first sacrificial layer 118A can be made of a metal oxide such as In-Ga-Zn oxide. This can be done. As the first sacrificial layer 118A, for example, using the sputtering method, In- A Ga-Zn oxide film can be formed. Furthermore, indium oxide and In-Zn oxide can be formed. Indium tin oxide, In-Sn oxide, Indium titanium oxide (In-Ti oxide), Indium tin Zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Z Examples include indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), etc. Alternatively, indium tin oxide containing silicon can be used. can.

[0139] Note that the above gallium can be replaced with element M (where M is aluminum, silicon, boron, yttrium). Umium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium Molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten Alternatively, one or more types of magnesium may be used.

[0140] Furthermore, the first sacrificial layer 118A can be various materials that can be used for the protective layers 131 and 132. Inorganic insulating films can be used. In particular, oxide insulating films have better interlocking properties with the EL layer compared to nitride insulating films. It is preferable to have high adhesion. For example, the first sacrificial layer 118A contains aluminum oxide and haloxide. Inorganic insulating materials such as humic acid and silicon oxide can be used. First sacrificial layer 118 For example, an aluminum oxide film can be formed using the ALD method. Using the LD method is preferable because it reduces damage to the substrate (especially the EL layer). .

[0141] Next, as shown in Figure 3B, a resist mask 190a is formed on the first sacrificial layer 118A. The resist mask is coated with a photosensitive resin (photoresist), and then exposed and developed. It can be formed by doing so.

[0142] As shown in Figure 2A, the resist mask 190a overlaps with the region that will later become the subpixel 110a. It is placed in a position where it will later become the connection part 140. It is also preferable to provide it in the position where the conductive film 111 is later the conductive layer 12 The region designated as 3 can be prevented from being damaged during the manufacturing process of the display device. As the mask 190a, one island-shaped pattern is provided for one subpixel 110a. It is preferable that they are arranged in a row as the resist mask 190a (Figure 2A). Alternatively, a single band-shaped pattern can be formed using multiple subpixels 110a (aligned in the Y direction). stomach.

[0143] Then, as shown in Figure 3C, the first hole injection layer 18 is formed using the resist mask 190a. Part of 1A, part of the first hole transport layer 182A, part of the first light-emitting layer 183A, the first electric A portion of the subtransport layer 184A and a portion of the first sacrificial layer 118A are removed. 1 hole injection layer 181A, 1 hole transport layer 182A, 1 light-emitting layer 183A, 1 electric The child transport layer 184A and the first sacrificial layer 118A overlap with the resist mask 190a. The areas that are not present can be removed. Therefore, a portion of the conductive film 111 is exposed. In the region corresponding to the sub-pixel 110a, a first hole injection layer 181a is formed on the conductive film 111. First hole transport layer 182a, first light-emitting layer 183a, first electron transport layer 184a, first The layered structure of the sacrificial layer 118a and the resist mask 190a remains. Also, the connection part 1 In the region corresponding to 40, a first sacrificial layer 118a and a resist mask 1 are placed on the conductive film 111. The laminated structure with 90a remains. Note that the first hole injection layer 181a and the first hole transport layer 1 The laminated structure of 82a, the first light-emitting layer 183a, and the first electron transport layer 184a is the first layer Also written as 113a. Afterwards, remove the resist mask 190a.

[0144] The first sacrificial layer 118A is processed by a wet etching method or a dry etching method. This can be done. The processing of the first sacrificial layer 118A is preferably carried out by anisotropic etching. It seems so.

[0145] By using the wet etching method, compared to the dry etching method, the first During the processing of the sacrificial layer 118A, the first hole injection layer 181A, the first hole transport layer 182A, To reduce damage to the first light-emitting layer 183A and the first electron transport layer 184A. This can be done. When using the wet etching method, for example, a developer, tetramethyl hydroxide, etc. Aqueous solution of ammonium (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or It is preferable to use a chemical solution containing these mixed liquids.

[0146] Furthermore, when using the dry etching method, do not use an etching gas that contains oxygen. As a result, the first hole injection layer 181A, the first hole transport layer 182A, and the first light-emitting layer 183A Furthermore, degradation of the first electron transport layer 184A can be suppressed. Dry etching method When using these, for example, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl 3. Using a gas containing noble gases (also called rare gases) such as He as the etching gas. This is preferable.

[0147] In Figure 3C, the first hole injection layer 181A is shown with the resist mask 190a remaining. , first hole transport layer 182A, first light-emitting layer 183A, and first electron transport layer 184A The following is an example of processing the first sacrificial layer 118A, but is not limited to this. If the sacrificial layer 118A has a multilayer structure, a resist mask 190a is used to add some of the layers. After processing and removing the resist mask 190a, the remaining portion of the layer is used as a hard mask. The layer may be processed.

[0148] For example, after processing a portion of the first sacrificial layer 118A using the resist mask 190a The resist mask 190a is removed by ashing using oxygen plasma, etc. At this time, the remaining layer of the first sacrificial layer 118A is located on the outermost surface, and the first hole injection layer 181A, The first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A are Since it is not exposed, in the removal process of the resist mask 190a, the first hole injection layer 1 81A, first hole transport layer 182A, first light-emitting layer 183A, and first electron transport layer 1 This can prevent damage to the 84A. And the processed first sacrifice layer Using a portion of the 118A layer as a hard mask, the remaining layers of the first sacrificial layer 118A and the first The hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first The electron transport layer 184A and can be processed accordingly.

[0149] A first hole injection layer 181A, a first hole transport layer 182A, a first light-emitting layer 183A, and The processing of the first electron transport layer 184A is preferably carried out by anisotropic etching. Anisotropic dry etching is preferred. The etching gas can be a gas containing nitrogen or water. Gases containing elements, gases containing noble gases, gases containing nitrogen and argon, or nitrogen and hydrogen It is preferable to use a gas containing [specific element]. It is preferable not to use an oxygen-containing gas as the etching gas. And so, the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, Furthermore, the degradation of the first electron transport layer 184A can be suppressed.

[0150] Furthermore, an etching gas containing oxygen may be used. This allows the etching speed to be increased. Therefore, the etching speed can be increased to a sufficient speed. It is possible to perform etching under low power conditions while maintaining the same performance. Therefore, the first positive Hole injection layer 181A, first hole transport layer 182A, first light-emitting layer 183A, and first electric Damage to the subtransport layer 184A can be suppressed. Furthermore, during etching, This can suppress problems such as the adhesion of reaction products.

[0151] Next, as shown in Figure 4A, the first sacrificial layer 118a and the second positive film 111 are placed on top of the conductive film 111. Hole injection layer 181B, second hole transport layer 182B, second light-emitting layer 183B, and second electron The transport layer 184B is formed in this order, and the second sacrificial layer 118B is placed on the second electron transport layer 184B. This forms the second hole injection layer 1 in the cross-sectional view between Y1 and Y2 as shown in Figure 4A. 81B, second hole transport layer 182B, second light-emitting layer 183B, and second electron transport layer 18 The end of 4B on the connection point 140 side is located inward from the end of the second sacrificial layer 118B.

[0152] The second hole injection layer 181B, the second hole transport layer 182B, the second light-emitting layer 183B, and The two electron transport layers 184B are later used to form the second hole injection layer 181b and the second hole transport layer, respectively. These layers are the transmitting layer 182b, the second light-emitting layer 183b, and the second electron transport layer 184b. The second light-emitting layer 183b emits light of a different color from the first light-emitting layer 183a. Inlet layer 181b, second hole transport layer 182b, second light-emitting layer 183b, and second electron transport layer The configurations and materials applicable to layer 184b are, respectively, the first hole injection layer 181a and the first Similar to the hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a. There are: a second hole transport layer 182B, a second light-emitting layer 183B, and a second electron transport layer 184 B consists of a first hole injection layer 181A, a first hole transport layer 182A, and a first light-emitting layer, respectively. The film can be formed using the same method as for 183A and the first electron transport layer 184A.

[0153] The second sacrificial layer 118B is formed using a material applicable to the first sacrificial layer 118A. It is possible.

[0154] Next, as shown in Figure 4B, a resist mask 190b is formed on the second sacrificial layer 118B. ru.

[0155] As shown in Figure 2B, the resist mask 190b overlaps with the region that will later become the subpixel 110b. It is placed in a position where it will later become the connection part 140. Furthermore, the resist mask 190b overlaps with the region that will later become the connection part 140. It is also preferable to provide it in the position where the conductive film 111 is later the conductive layer 12 The region designated as 3 can be prevented from being damaged during the manufacturing process of the display device. If a first sacrificial layer 118a is provided in the region that becomes the connection part 140, then the resist mask 1 It is not necessary to provide 90b in that region. As the resist mask 190b, one subpixel 1 It is preferable that one island-shaped pattern is provided for 10b. Alternatively, As a stock mask 190b, one band-shaped pattern is applied to multiple subpixels 110b arranged in a row. They may form a line.

[0156] Then, as shown in Figure 4C, the second hole injection layer 18 is created using the resist mask 190b. Part of 1B, part of the second hole transport layer 182B, part of the second light-emitting layer 183B, and 2 A portion of the electron transport layer 184B and a portion of the second sacrificial layer 118B are removed. , second hole injection layer 181B, second hole transport layer 182B, second light emission layer 183B, second The electron transport layer 184B and the second sacrificial layer 118B overlap with the resist mask 190b. The areas that are not exposed can be removed. Therefore, a portion of the conductive film 111 is exposed. Then, in the region corresponding to the sub-pixel 110b, a second hole injection layer 181 is formed on the conductive film 111. b, second hole transport layer 182b, second light-emitting layer 183b, second electron transport layer 184b, The stacked structure of the sacrificial layer 118b and the resist mask 190b remains. In the region corresponding to part 140, a first sacrificial layer 118a and a second sacrificial layer are placed on the conductive film 111. The layered structure of 118b and the resist mask 190b remains. Furthermore, the second hole injection... Layer 181b, second hole transport layer 182b, second light-emitting layer 183b, and second electron transport layer The layered structure of layer 184b is also referred to as the second layer 113b. Subsequently, the resist mask 190b Remove.

[0157] The second sacrificial layer 118B is processed using a method applicable to the processing of the first sacrificial layer 118A. This is possible. Second hole injection layer 181B, second hole transport layer 182B, second light-emitting layer 183B, and the second electron transport layer 184B are connected to the first hole injection layer 181A and the first hole transport layer Applicable to the processing of the electron transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A. It can be processed using a suitable method. The resist mask 190b is resist mask 1 90a can be removed in a manner and timing applicable to its removal.

[0158] Next, as shown in Figure 5A, the first sacrificial layer 118a, the second sacrificial layer 118b, and the conductive On the film 111, a third hole injection layer 181C, a third hole transport layer 182C, and a third light-emitting layer 1 83C and the third electron transport layer 184C are formed in this order, and on the third electron transport layer 184C A third sacrificial layer 118C is formed. As shown in Figure 5A, in the cross-sectional view between Y1 and Y2, The third hole injection layer 181C, the third hole transport layer 182C, the third light-emitting layer 183C, and The end of the third electron transport layer 184C on the connection portion 140 side is adjacent to the end of the third sacrificial layer 118C. It is located further inside.

[0159] The third hole injection layer 181C, the third hole transport layer 182C, the third light-emitting layer 183C, and The three electron transport layers 184C are later replaced by the third hole injection layer 181c and the third hole transport layer, respectively. These layers are the transmitting layer 182c, the third light-emitting layer 183c, and the third electron transport layer 184c. The third light-emitting layer 183c is a different color from the first light-emitting layer 183a and the second light-emitting layer 183b. It emits light. Third hole injection layer 181c, third hole transport layer 182c, third light-emitting layer 18 The configurations and materials applicable to 3c and the third electron transport layer 184c are, respectively, the first Hole injection layer 181a, first hole transport layer 182a, first light-emitting layer 183a, and first electric This is similar to the third hole injection layer 184a. Third hole injection layer 181C, third hole transport layer 182C The third light-emitting layer 183C and the third electron transport layer 184C are, respectively, first hole injection Layer 181A, first hole transport layer 182A, first light-emitting layer 183A, and first electron transport layer The film can be formed using the same method as 184A.

[0160] The third sacrificial layer 118C is formed using a material applicable to the first sacrificial layer 118A. It is possible.

[0161] Next, as shown in Figure 5B, a resist mask 190c is formed on the third sacrificial layer 118C. ru.

[0162] As shown in Figure 2C, the resist mask 190c overlaps with the region that will later become the subpixel 110c. It is placed in the position. As the resist mask 190c, one subpixel 110c is used. It is preferable that an island-like pattern is provided. Alternatively, the resist mask 190c and A single band-shaped pattern may be formed for multiple subpixels 110c arranged in a row. Furthermore, the resist mask 190c is also provided in a position that overlaps with the area that will later become the connection part 140. It is preferable to do so. Furthermore, in the region that will later become the connection portion 140, the first sacrificial layer 118a and If at least one of the second sacrificial layers 118b is provided, the resist mask 190c It is not necessary to include it in the area.

[0163] Then, as shown in Figure 5C, the third hole injection layer 18 is created using the resist mask 190c. Part of 1C, part of the third hole transport layer 182C, part of the third light-emitting layer 183C, third electric A portion of the child transport layer 184C and a portion of the third sacrificial layer 118C are removed. 3 hole injection layer 181C, 3 hole transport layer 182C, 3 light emitting layer 183C, 3 electric The child transport layer 184C and the third sacrificial layer 118C overlap with the resist mask 190c. The areas that are not present can be removed. And in the area corresponding to sub-pixel 110c, the conductive film On top of 111, a third hole injection layer 181c, a third hole transport layer 182c, and a third light-emitting layer 18 3c, third electron transport layer 184c, third sacrificial layer 118c, and resist mask 190 The layered structure of c remains. Also, in the region corresponding to the connection part 140, on the conductive film 111, A first sacrificial layer 118a, a second sacrificial layer 118b, a third sacrificial layer 118c, and a resist The layered structure of mask 190c remains. Furthermore, the third hole injection layer 181c and the third hole injection layer... The laminated structure of the electron transport layer 182c, the third light-emitting layer 183c, and the third electron transport layer 184c is This is also referred to as layer 113c. Then, as shown in Figure 6A, the resist mask 190c is removed. do.

[0164] The third sacrificial layer 118C is processed using a method applicable to the processing of the first sacrificial layer 118A. This is possible. Third hole injection layer 181C, third hole transport layer 182C, third light-emitting layer 183C, and the third electron transport layer 184C are the first hole injection layer 181A, and the first hole transport layer Applicable to the processing of the electron transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A. It can be processed using a suitable method. The resist mask 190c is resist mask 1 90a can be removed in a manner and timing applicable to its removal.

[0165] Next, as shown in Figure 6B, the first sacrificial layer 118a, the second sacrificial layer 118b, and the third Using the sacrificial layer 118c as a hard mask, the conductive film 111 is processed, and the pixel electrode 111a, Layers 111b, 111c, and the conductive layer 123 are formed.

[0166] During the processing of the conductive film 111, a portion of the layer 101 containing the transistor (specifically, the outermost surface) The insulating layer (located therein) may be processed, and a recess may be formed. In the following explanation, transient The following example will be given where a recess is provided in the layer 101 containing the star, but It doesn't have to be included.

[0167] Here, in order to form the conductive layer 123, at least the third sacrificial layer 118c is connected to the connection portion 1 It is sufficient if it is provided at 40. On the other hand, as mentioned above, the second victim layer 118b and the third victim A laminated structure of layer 118c, or a first sacrificial layer 118a, a second sacrificial layer 118b, and By providing the laminated structure of the sacrificial layer 118c 3 at the connection part 140, among the conductive film 111, This makes it possible to suppress damage to the region that becomes the electrolytic layer 123 during the manufacturing process of the display device. That's good.

[0168] The conductive film 111 can be processed by a wet etching method or a dry etching method. Yes, it is possible. The conductive film 111 is preferably processed by anisotropic etching.

[0169] Next, as shown in Figure 6C, the first sacrificial layer 118a, the second sacrificial layer 118b, and the third The sacrificial layer 118c is removed. As a result, the first electron transport layer 1 on the pixel electrode 111a is removed. 84a is exposed, and on the pixel electrode 111b, the second electron transport layer 184b is exposed, and the pixel electrode On 111c, the third electron transport layer 184c is exposed, and at the connection portion 140, the conductive layer 1 Number 23 is exposed.

[0170] The same method as the sacrificial layer processing method can be used for the sacrificial layer removal process. In particular, By using the wet etching method, compared to the dry etching method, the first When removing the sacrificial layer 118a, the second sacrificial layer 118b, and the third sacrificial layer 118c, Reduces the damage applied to the first layer 113a, the second layer 113b, and the third layer 113c. It is possible.

[0171] Next, as shown in Figure 7A, the first layer 113a, the second layer 113b, and the third layer 11 A fourth electron transport layer 116 is formed so as to cover 3c. As shown in Figure 7A, Y1-Y In the cross-sectional view between the two, the end of the fourth electron transport layer 116 on the connection portion 140 side is the connection portion 14 Located inside of 0, the conductive layer 123 remains exposed.

[0172] The materials that can be used as the fourth electron transport layer 116 are as described above. The transport layer 116 can be transported by vapor deposition (including vacuum deposition), transfer, printing, inkjet, or coating. It can be formed by methods such as weaving. In addition, the fourth electron transport layer 116 is premix It may be formed using materials.

[0173] The fourth electron transport layer 116 uses a material with higher insulating properties than the electron injection layer 114 that will be formed next. The fourth electron transport layer 116 is formed by the first layer 113a, the second layer 113b, and , the upper and side surfaces of the third layer 113c, and the pixel electrodes 111a, 111b, 111c Because it is provided so as to cover the sides, the highly conductive electron injection layer 114 is in contact with these layers. This suppresses the occurrence of short circuits in the light-emitting device. This can improve the reliability of light-emitting devices.

[0174] In particular, a recess in a part of layer 101 containing the transistor (specifically, the insulating layer located on the outermost surface) If a section is provided, the entire side surface of the pixel electrodes 111a, 111b, and 111c is provided by the fourth electrode It is preferable that it can be covered with the sub-transport layer 116.

[0175] Next, as shown in Figure 7B, an electron injection layer 114 is formed on the fourth electron transport layer 116. As shown in Figure 7B, in the cross-sectional view between Y1 and Y2, the connection portion 140 of the electron injection layer 114 The end of the side is located inside the connection part 140, and the conductive layer 123 remains exposed.

[0176] The materials that can be used as the electron injection layer 114 are as described above. Electron injection layer 114 This includes methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating. It can be formed using [a specific method]. Furthermore, the electron injection layer 114 is formed using a premixed material. It's okay.

[0177] Here, we show an example in which a void 133 is formed by the deposition of an electron injection layer 114, but the void 13 Layer 3 does not need to be formed. In this case, the electron injection layer 114 is between the two light-emitting devices. A packed structure is formed. Alternatively, two light-emitting devices are formed before the deposition of the electron injection layer 114. The space between the particles may be filled with a fourth electron transport layer 116.

[0178] Furthermore, as shown in Figure 7C, insulating material 134 is pre-filled in the areas that may become voids 133. It may be filled. Details of the void 133 and the insulator 134 are as described above.

[0179] Then, a common electrode 115 is formed on the electron injection layer 114.

[0180] The materials that can be used as the common electrode 115 are as described above. The shape of the common electrode 115 For the process, for example, sputtering or vacuum deposition can be used.

[0181] Subsequently, a protective layer 131 is formed on the common electrode 115, and a protective layer 132 is formed on the protective layer 131. Furthermore, the substrate 120 is bonded onto the protective layer 132 using the resin layer 119. This allows us to manufacture the display device 100 shown in Figure 1B.

[0182] The materials and film formation methods that can be used for protective layers 131 and 132 are as described above. The film deposition methods for layers 131 and 132 include vacuum deposition, sputtering, CVD, and Examples include the ALD method. Protective layer 131 and protective layer 132 are deposited using different film deposition methods. It may also be a film formed using the same method. Furthermore, the protective layers 131 and 132 are each single-layer structures. It may be a single-layer structure, or it may be a laminated structure.

[0183] As described above, in the method for manufacturing the display device of this embodiment, the island-shaped EL layer is made of fine metal Instead of being formed using a mask, the EL layer is deposited on one surface and then processed to create the shape. Therefore, island-shaped EL layers can be formed with a uniform thickness.

[0184] The first, second, and third layers that make up each color of light-emitting device are formed in separate processes. Therefore, each EL layer is configured (materials, film thickness, etc.) to suit the light-emitting device of each color. This allows for the fabrication of light-emitting devices with excellent properties. ru.

[0185] A display device according to one aspect of the present invention has an island-shaped first electron transport layer on a light-emitting layer, and further comprises pixels It comprises an electrode, a light-emitting layer, and a second electron transport layer covering each of the sides of the first electron transport layer. In the manufacturing process of the display device, the light-emitting layer and the first electron transport layer are stacked. Because the EL layer is processed in this way, the display device has a configuration that reduces damage to the light-emitting layer. Furthermore, the second electron transport layer brings the pixel electrode into contact with the electron injection layer or common electrode. This configuration suppresses the occurrence of short circuits in the light-emitting device.

[0186] This embodiment can be appropriately combined with other embodiments. Furthermore, this specification Furthermore, if multiple configuration examples are shown within a single embodiment, the configuration examples may be combined as appropriate. It is possible to do so.

[0187] (Embodiment 2) In this embodiment, a display device according to one aspect of the present invention will be described using Figures 8 to 11. .

[0188] The display device of this embodiment can be a high-resolution display device. Therefore, this embodiment Display devices in this form include, for example, wristwatch-type and bracelet-type information terminals (wearable devices). VR equipment, as well as VR devices such as head-mounted displays and AR glasses. It can be used in the display section of wearable devices that can be worn on the head, such as headgear.

[0189] [Display Module] Figure 8A shows a perspective view of the display module 280. The display module 280 is connected to the display device 1 It has 00A and FPC290. The display device that the display module 280 has is This is not limited to display device 100A, but also applies to display device 100B or display device 100C as described later. That's fine.

[0190] The display module 280 has substrates 291 and 292. It has a display unit 281. The display unit 281 displays the image in the display module 280. This is a region in which light from each pixel provided in the pixel section 284, which will be described later, can be seen. ru.

[0191] Figure 8B shows a schematic perspective view illustrating the configuration of the substrate 291. On the substrate 291 are , circuit section 282, pixel circuit section 283 on circuit section 282, pixel section on pixel circuit section 283 284 and are stacked. Also, in the portion of the substrate 291 that does not overlap with the pixel portion 284, A terminal section 285 is provided for connecting to the FPC290. Terminal section 285 and circuit section 2 82 is electrically connected by a wiring section 286 which is composed of multiple wires.

[0192] The pixel section 284 has a plurality of pixels 284a arranged periodically. On the right side of Figure 8B, there is one This shows a magnified view of pixel 284a. Pixel 284a is a light-emitting device with different emission colors. It has chairs 130a, 130b, and 130c. In this embodiment, it emits red light. Device 130a, light-emitting device 130b that emits green light, and light-emitting device that emits blue light Let's take the case where pixel 284a is composed of optical device 130c as an example. The devices can be arranged in a stripe array as shown in Figure 8B. Also, delta Various array methods for light-emitting devices, such as arrays or pentile arrays, can be applied. ru.

[0193] Here, the pixels of the display device have subpixels that have light-emitting devices that emit light of different colors from each other. If there are three types, these three subpixels are the three color subpixels R, G, and B, and yellow (Y). Examples include sub-pixels of three colors: cyan (C) and magenta (M). These sub-pixels are 4 If there are four subpixels, these four subpixels are R, G, B, and white (W), R Examples include sub-pixels of four colors: G, B, and Y.

[0194] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0195] One pixel circuit 283a controls the light emission of the three light-emitting devices of one pixel 284a. It is a control circuit. One pixel circuit 283a controls the light emission of one light-emitting device. A configuration with three paths may also be used. For example, the pixel circuit 283a has one light-emitting device Each unit has one selection transistor and one current control transistor (drive transistor). The configuration can include at least a (T) and a capacitive element. In this case, the selected tr The gate of the inverter receives the gate signal, and either the source or the drain receives the source signal. Each input is received separately. This enables the realization of an active-matrix display device.

[0196] The structure of the transistors in the display device of this embodiment is not particularly limited. For example, Uses na-type transistors, staggered transistors, inverse staggered transistors, etc. It is possible to do this. Also, either top-gate or bottom-gate transistor structure Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed. That's good too.

[0197] The crystallinity of semiconductor materials used in transistors is not particularly limited; amorphous semiconductors, monocrystalline semiconductors, etc. Crystalline semiconductors, or semiconductors having crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors) Either a single-crystal semiconductor or a semiconductor having a crystalline region in part may be used. Using a crystalline semiconductor is preferable because it suppresses the degradation of transistor characteristics.

[0198] The semiconductor layer of a transistor preferably contains a metal oxide (also called an oxide semiconductor). i. In other words, the display device of this embodiment uses a metal oxide in the channel formation region It is preferable to use a zista (hereinafter referred to as an OS transistor). Alternatively, half of a transistor The conductive layer preferably contains silicon. Amorphous silicon is preferred as the silicon. Examples include crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0199] The semiconductor layer is, for example, made of indium and M (where M is gallium, aluminum, silicon, and chlorine). Calcium, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, gel Manium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium, Ta (One or more selected from tungsten, magnesium, and zinc) It is preferable that it has the following. In particular, M is aluminum, gallium, yttrium, and s It is preferable that it be one or more types selected from the group.

[0200] In particular, the semiconductor layer contains indium (In), gallium (Ga), and zinc (Zn). It is preferable to use an oxide (also written as IGZO).

[0201] If the semiconductor layer is an In-M-Zn oxide, then the atoms of In in the In-M-Zn oxide... The numerical ratio is preferably greater than or equal to the atomic ratio of M. As for the atomic ratio of elements, In:M:Zn = 1:1:1 or close to it, In:M: Zn=1:1:1.2 or near that composition, In:M:Zn=2:1:3 or near that composition Nearby compositions: In:M:Zn=3:1:2 or compositions in the vicinity: In:M:Zn=4:2 :3 or a composition in its vicinity, In:M:Zn=4:2:4.1 or a composition in its vicinity, I n:M:Zn=5:1:3 or a similar composition, In:M:Zn=5:1:6 or something else Compositions in the vicinity of In:M:Zn=5:1:7 or in the vicinity of In:M:Zn=5 :1:8 or a composition close to it, In:M:Zn=6:1:6 or a composition close to it, I Compositions such as n:M:Zn=5:2:5 or nearby compositions are examples. This includes a range of ±30% of the desired atomic ratio.

[0202] For example, when describing the composition as having an atomic ratio of In:Ga:Zn = 4:2:3 or close to it. This includes the case where, when In is set to 4, Ga is between 1 and 3, and Zn is between 2 and 4. Also, when describing the composition as having an atomic ratio of In:Ga:Zn=5:1:6 or close to it... When In is set to 5, Ga is greater than 0.1 and less than or equal to 2, and Zn is between 5 and 7. This includes cases where the atomic ratio is In:Ga:Zn=1:1:1 or a set of similar values. When written as "composition", if In is set to 1, Ga is greater than 0.1 and less than or equal to 2, and Zn This includes cases where the value is greater than 0.1 and less than or equal to 2.

[0203] The transistor in circuit section 282 and the transistor in pixel circuit section 283 are the same The same structure may be used, or it may be a different structure. The circuit section 282 has multiple transistors The structure of the zistor may all be the same, or there may be two or more different types. Similarly, the pixel circuit The structures of the multiple transistors in part 283 may all be the same, or there may be two or more different structures. That's fine.

[0204] The circuit section 282 has circuits that drive each pixel circuit 283a of the pixel circuit section 283. It is preferable to have one or both of the gate line drive circuit and the source line drive circuit. i. In addition, even if it has at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit good.

[0205] The FPC290 is for supplying video signals or power potential, etc., to the circuit section 282 from an external source. It functions as wiring. Additionally, an IC (integrated circuit) may be mounted on the FPC290. .

[0206] The display module 280 has a pixel circuit section 283 and a circuit section 282 located below the pixel section 284. Since one or both can be arranged in an overlapping configuration, the aperture ratio of the display unit 281 ( The effective display area ratio can be made extremely high. For example, the aperture ratio of the display unit 281 is 40 % or more but less than 100%, preferably 50% or more and 95% or less, more preferably 60% or more and 95% or less It can be reduced to less than %. Furthermore, it is possible to arrange the 284a pixels at extremely high density. This makes it possible to make the resolution of the display unit 281 extremely high. For example, the display unit 281 has 2 000 ppi or higher, preferably 3000 ppi or higher, more preferably 5000 ppi or higher More preferably 6000 ppi or more, and 20000 ppi or less, or 300 It is preferable that the pixels 284a are arranged at a resolution of 00ppi or less.

[0207] Because such a display module 280 is extremely high-resolution, it is suitable for head-mounted displays. It can be suitably used in VR devices such as screens, or in glasses-type AR devices. For example, in a configuration where the display unit of the display module 280 is viewed through a lens... However, the display module 280 has an extremely high-resolution display section 281, so the lens can display Even when the area is magnified, the pixels are not visible, allowing for a highly immersive display. Joule 280 is not limited to this, and is suitably used in electronic devices having a relatively small display unit. It can be used, for example, in the display section of wearable electronic devices such as wristwatches. ru.

[0208] [Display device 100A] The display device 100A shown in Figure 9 consists of a substrate 301 and light-emitting devices 130a, 130b, and 130 It has a capacitor c, a capacitance of 240, and a transistor 310.

[0209] Substrate 301 corresponds to substrate 291 in Figures 8A and 8B. The insulating layer is located from substrate 301. The stacked structure up to 255 corresponds to layer 101 containing the transistor in Embodiment 1. .

[0210] Transistor 310 is a transistor having a channel formation region on substrate 301. For plate 301, a semiconductor substrate such as a single-crystal silicon substrate can be used. Transistor 310 is located in part of substrate 301, conductive layer 311, low-resistance region 312, insulating layer 3 13 and an insulating layer 314 are included. The conductive layer 311 functions as a gate electrode. Layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The resistive region 312 is a region of substrate 301 doped with impurities, and is source or drained. It functions as one of the components. The insulating layer 314 is provided covering the side surface of the conductive layer 311.

[0211] Furthermore, an element is placed between two adjacent transistors 310 so as to be embedded in the substrate 301. A separation layer 315 is provided.

[0212] Furthermore, an insulating layer 261 is provided covering the transistor 310, and a capacitance 24 is placed on the insulating layer 261. A value of 0 is provided.

[0213] Capacity 240 consists of a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. It has. Conductive layer 241 functions as one electrode of capacitance 240, and conductive layer 245 functions as one electrode of capacitance 24 The other electrode of 0 functions, and the insulating layer 243 functions as a dielectric with capacitance 240.

[0214] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. 41 is the source of transistor 310 by plug 271 embedded in insulating layer 261 Alternatively, it is electrically connected to one of the drains. The insulating layer 243 covers the conductive layer 241. The conductive layer 245 is provided in the region that overlaps with the conductive layer 241 via the insulating layer 243. It is being done.

[0215] An insulating layer 255 is provided covering the capacitance 240, and a light-emitting device 130a is placed on the insulating layer 255. , 130b, 130c, etc. are provided. In this embodiment, the light-emitting device 130a, Examples of 130b and 130c having the same structure as the layered structure shown in Figure 1B are shown. A protective layer 131 is provided on each of the devices 130a, 130b, and 130c. A protective layer 132 is provided on the protective layer 131, and a resin layer 11 is provided on the protective layer 132. The substrate 120 is bonded by 9. The fourth electron transport layer 116 and electron injection layer 11 An insulator 134 is filled between 4. The configuration from the light-emitting device to the substrate 120. For details about the elements, refer to Embodiment 1. The substrate 120 is shown in Figure 8A. This corresponds to substrate 292.

[0216] The pixel electrodes of the light-emitting device are plugs 256 embedded in the insulating layer 255 and in the insulating layer 254. The embedded conductive layer 241 and the plug 271 embedded in the insulating layer 261 It is electrically connected to either the source or drain of the transistor 310.

[0217] [Display device 100B] Display device 100B shown in Figure 10 differs from display device 100A in that it has a different transistor configuration. It differs primarily from the above. Note that explanations for parts similar to the display device 100A will be omitted. be.

[0218] Transistor 320 has a semiconductor layer in which a channel is formed, which contains a metal oxide (oxide semiconductor and It is a transistor (OS transistor) to which the following principle is applied.

[0219] The transistor 320 consists of a semiconductor layer 321, an insulating layer 323, a conductive layer 324, and a pair of conductive layers 3 25 has an insulating layer 326 and a conductive layer 327.

[0220] Substrate 331 corresponds to substrate 291 in Figures 8A and 8B. The insulating layer is located from substrate 331. The stacked structure up to 255 corresponds to layer 101 containing the transistor in Embodiment 1. An insulating substrate or a semiconductor substrate can be used as the substrate 331.

[0221] An insulating layer 332 is provided on the substrate 331. The insulating layer 332 is protected from water from the substrate 331. Alternatively, impurities such as hydrogen may diffuse into the transistor 320, and the semiconductor layer 321 may escape. It functions as a barrier layer to prevent oxygen from escaping to the edge layer 332 side. For example, aluminum oxide films, hafnium oxide films, silicon nitride films, etc. A membrane that inhibits the diffusion of hydrogen or oxygen more effectively than a standard membrane can be used.

[0222] A conductive layer 327 is provided on the insulating layer 332, and an insulating layer 326 is provided covering the conductive layer 327. The conductive layer 327 functions as the first gate electrode of the transistor 320 and provides insulation. A portion of layer 326 functions as the first gate insulating layer. At least the semiconductor of the insulating layer 326 It is preferable to use an oxide insulating film, such as a silicon oxide film, in the portion that is in contact with the body layer 321. The upper surface of the insulating layer 326 is preferably flattened.

[0223] The semiconductor layer 321 is provided on the insulating layer 326. The semiconductor layer 321 has semiconductor properties. It is preferable that the semiconductor layer 321 has a metal oxide (also called an oxide semiconductor) film. Details of the materials that can be used appropriately will be described later.

[0224] A pair of conductive layers 325 are provided in contact with the semiconductor layer 321, and the source electrode and drain electrode are located on the semiconductor layer 321. It functions as a pole.

[0225] Furthermore, the top and side surfaces of the pair of conductive layers 325, as well as the side surfaces of the semiconductor layer 321, are covered and insulated. A layer 328 is provided, and an insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 is , the diffusion of impurities such as water or hydrogen from the insulating layer 264 into the semiconductor layer 321, and It functions as a barrier layer that prevents oxygen from detaching from the semiconductor layer 321. In this case, an insulating film similar to the insulating layer 332 described above can be used.

[0226] The insulating layer 328 and the insulating layer 264 are provided with openings that reach the semiconductor layer 321. Inside the opening, the sides of the insulating layer 264, the insulating layer 328, and the conductive layer 325, and the semi An insulating layer 323 and a conductive layer 324 are embedded in contact with the upper surface of the conductive layer 321. Layer 324 functions as a second gate electrode, and insulating layer 323 functions as a second gate insulating layer. It works.

[0227] The upper surface of the conductive layer 324, the upper surface of the insulating layer 323, and the upper surface of the insulating layer 264 each have a height The layers are planarized to roughly match, and then an insulating layer 329 and an insulating layer 265 are provided to cover them. It's being kicked.

[0228] Insulating layers 264 and 265 function as interlayer insulating layers. Insulating layer 329 is a transistor A burr prevents impurities such as water or hydrogen from diffusing from the insulating layer 265, etc., onto the ZISTA 320. It functions as an insulating layer. The insulating layer 329 is the same as the insulating layer 328 and insulating layer 332 described above. An insulating film can be used.

[0229] The plug 274, which is electrically connected to one of the pair of conductive layers 325, has an insulating layer 265 and an insulating layer 3 29, and are provided to be embedded in the insulating layer 264. Here, the plug 274 is , the sides of the openings of insulating layer 265, insulating layer 329, insulating layer 264, and insulating layer 328 A conductive layer 274a covering the surface and a portion of the upper surface of the conductive layer 325, and a contact with the upper surface of the conductive layer 274a. It is preferable to have a conductive layer 274b as the conductive layer 274a. Furthermore, it is preferable to use a conductive material that does not easily allow oxygen to diffuse.

[0230] In addition, the layer 101 containing the transistor may have various inorganic insulating films. Examples of films include silicon nitride films, silicon oxide nitride films, silicon oxide films, silicon nitride oxide films, and silicon oxide films. Silicon films, aluminum oxide films, aluminum nitride films, etc., can be used. Hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, oxide Tantalum film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide A film or the like may be used. Alternatively, two or more of the above-mentioned insulating films may be stacked and used.

[0231] The configuration from the insulating layer 254 to the substrate 120 in the display device 100B is as follows: It is the same as A.

[0232] [Display device 100C] The display device 100C shown in Figure 11 has a transistor 31 on the substrate 301 that forms a channel. A transistor 320 containing a metal oxide is stacked in a semiconductor layer where a channel is formed. It has the following configuration. Note that the same parts as those in the display devices 100A and 100B are omitted from the explanation. It is sometimes abbreviated.

[0233] An insulating layer 261 is provided covering the transistor 310, and a conductive layer 251 is provided on the insulating layer 261. It is provided. Furthermore, an insulating layer 262 is provided covering the conductive layer 251, and on the insulating layer 262 A conductive layer 252 is provided. The conductive layer 251 and the conductive layer 252 are, respectively, wiring. It functions. In addition, insulating layers 263 and 332 are provided covering the conductive layer 252, and insulation A transistor 320 is provided on layer 332. Also, covering the transistor 320 An insulating layer 265 is provided, and a capacitance 240 is provided on the insulating layer 265. Transistor 320 is electrically connected via plug 274.

[0234] Transistor 320 can be used as a transistor that constitutes a pixel circuit. Furthermore, transistor 310 is a transistor that constitutes a pixel circuit, or drives the pixel circuit. Transistors that constitute the drive circuits (gate line drive circuit, source line drive circuit) for operation It can be used as such. In addition, transistors 310 and 320 are used for calculations. It can be used as a transistor to constitute various circuits, such as circuits or memory circuits.

[0235] This configuration allows for the formation of not only pixel circuits but also drive circuits, etc., directly beneath the light-emitting device. Because this can be achieved, the display device can be operated more efficiently compared to when a drive circuit is provided around the display area. This makes miniaturization possible.

[0236] This embodiment can be combined with other embodiments as appropriate.

[0237] (Embodiment 3) In this embodiment, regarding the light-emitting device that can be used in a display device according to one aspect of the present invention, I will explain.

[0238] The light-emitting device shown in Figure 12A has an electrode 772, an EL layer 786, and an electrode 788. Of electrodes 772 and 788, one functions as the anode and the other as the cathode. Furthermore, of electrodes 772 and 788, one functions as a pixel electrode, and the other is a common electrode. It functions as such. Also, of electrodes 772 and 788, the electrode that extracts light is the visible light electrode. Preferably, the electrode has transparency to visible light, and the other electrode reflects visible light.

[0239] The EL layer 786 of the light-emitting device consists of layer 4420 and light-emitting layer 44, as shown in Figure 12A. 11. It can be composed of multiple layers, such as layer 4430. Layer 4420 is, for example, an electron ray A layer containing a material with high electron injection properties (electron injection layer) and a layer containing a material with high electron transport properties (electron transport layer) ) and the like may be present. The light-emitting layer 4411 has, for example, a light-emitting compound. 430 is, for example, a layer containing a material with high hole injection potential (hole injection layer) and a material with high hole transport potential. It may have a layer containing quality (a hole transport layer).

[0240] A configuration having a layer 4420, an emissive layer 4411, and a layer 4430 provided between a pair of electrodes. It can function as a single light-emitting unit, and in this specification, the configuration shown in Figure 12A is a single This is called a 'ru' structure.

[0241] Furthermore, Figure 12B shows a modified example of the EL layer 786 of the light-emitting device shown in Figure 12A. Specifically, the light-emitting device shown in Figure 12B has layer 4431 on electrode 772 and layer 4431 The upper layer 4432, the light-emitting layer 4411 on layer 4432, and the layer 4421 on the light-emitting layer 4411 It has a layer 4422 on layer 4421 and an electrode 788 on layer 4422. For example, the electrode When electrode 772 is the anode and electrode 788 is the cathode, layer 4431 functions as a hole injection layer. Layer 4432 functions as a hole transport layer, layer 4421 functions as an electron transport layer, and layer 44 22 functions as an electron injection layer. Alternatively, electrode 772 is used as the cathode and electrode 788 as the anode. In this case, layer 4431 functions as an electron injection layer and layer 4432 functions as an electron transport layer. Layer 4421 functions as a hole transport layer, and layer 4422 functions as a hole injection layer. By using such a layered structure, carriers are efficiently injected into the light-emitting layer 4411, and the light-emitting layer 441 This makes it possible to improve the efficiency of carrier recombination within a single unit.

[0242] As shown in Figure 12C, there are multiple light-emitting layers (light-emitting layer 44) between layer 4420 and layer 4430. Configurations that include 11, 4412, and 4413 are also variations of the single structure.

[0243] Furthermore, as shown in Figure 12D, multiple light-emitting units (EL layers 786a, 786b) are located in the middle. In this specification, a configuration connected in series via layer 4440 (also called the charge generation layer) is referred to as tandem. This is called a tandem structure. However, it is not limited to this; for example, a tandem structure can be called a stack structure. This is also good. Furthermore, by using a tandem structure, it is possible to create a light-emitting device that can emit high-brightness light. It is possible.

[0244] Furthermore, in Figures 12C and 12D, as shown in Figure 12B, layer 4420 and layer 443 Each instance of 0 can represent a laminated structure consisting of two or more layers.

[0245] The light-emitting color of the light-emitting device depends on the material that makes up the EL layer 786, and can be red, green, blue, cyan, The color can be magenta, yellow, or white, etc. Also, a microcavity can be added to the light-emitting device. By adding a structure, the color purity can be further enhanced.

[0246] A light-emitting device that emits white light shall have a configuration that includes two or more types of light-emitting materials in the light-emitting layer. This is preferable. To obtain white light emission, the light emitted by two or more light-emitting materials must be in a complementary color relationship. You can select a suitable luminescent material. For example, the luminescent color of the first luminescent layer and the luminescent color of the second luminescent layer. By making the colors complementary, the entire light-emitting device emits white light. This can be achieved. The same applies to light-emitting devices having three or more light-emitting layers. For example, if the light-emitting colors of the light-emitting layers 4411, 4412, and 4413 shown in Figure 12C are complementary colors Having this makes it possible to realize a single-structure white light-emitting device.

[0247] The light-emitting layer contains light-emitting materials that emit light in colors such as R (red), G (green), B (blue), Y (yellow), and O (orange). It is preferable to have two or more qualities. Alternatively, it may have two or more luminescent substances, and each of the luminescent substances The emission preferably includes spectral components of two or more colors from R, G, and B.

[0248] This embodiment can be combined with other embodiments as appropriate.

[0249] (Embodiment 4) In this embodiment, the OS transistor described in the above embodiment can be used. This section explains metal oxides (also known as oxide semiconductors).

[0250] The metal oxide preferably contains at least indium or zinc. In particular, indium It is preferable that it also contains aluminum, gallium, and zinc. It is preferable that it contains thorium, tin, etc. Also, boron, silicon, titanium, Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium One of the following materials is selected from: luminous, hafnium, tantalum, tungsten, magnesium, cobalt, etc. It may contain one or more species.

[0251] Furthermore, metal oxides can be produced by sputtering, metal-organic chemical vapor deposition (MOCVD), and other methods. (e.g., Organic Chemical Vapor Deposition) Chemical vapor deposition (CVD) method, or, methods such as atomic layer deposition (ALD). It can be formed by [this method].

[0252] <Classification of crystal structures> The crystal structure of oxide semiconductors is amorphous (completely amorphous). (including ous), CAAC (c-axis-aligned crystalline) , nc(nanocrystalline), CAC(cloud-aligned c Polycrystalline materials include polycrystalline materials, single crystals, and polycrystalline materials. Examples include crystal, etc.

[0253] The crystal structure of the film or substrate is determined by X-ray diffraction (XRD). It can be evaluated using the (on) spectrum. For example, GIXD (Grazing- The evaluation can be performed using the XRD spectrum obtained from the Incidence XRD measurement. Yes, it is possible. The GIXD method is also known as the thin-film method or the Seemann-Bohlin method.

[0254] For example, in a quartz glass substrate, the peak shape of the XRD spectrum is almost symmetrical. On the other hand, in IGZO films with a crystalline structure, the peak shapes of the XRD spectra are asymmetrical. It is a term used. The asymmetrical shape of the peaks in the XRD spectrum indicates that the film or substrate is affected. This clearly indicates the presence of crystals inside. In other words, the shape of the peaks in the XRD spectrum is symmetrical. If it is not amorphous, the film or substrate cannot be said to be in an amorphous state.

[0255] Furthermore, the crystal structure of the film or substrate is determined by nano-beam diffraction (NBED). Diffraction patterns observed by electron diffraction (extremely low-voltage electrons) This can be evaluated using the sub-ray diffraction pattern (also called the sub-ray diffraction pattern). For example, diffraction of a quartz glass substrate. The pattern shows a halo, confirming that the quartz glass is in an amorphous state. Furthermore, the diffraction pattern of the IGZO film deposited at room temperature showed a spot-like pattern rather than a halo. A pattern is observed. Therefore, the IGZO film deposited at room temperature is neither crystalline nor amorphous. It is not a state, but an intermediate state, and it cannot be concluded that it is an amorphous state. .

[0256] <<Oxide semiconductor structure>> Note that oxide semiconductors may be classified differently from those described above when considering their structure. Example For example, oxide semiconductors include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. They can be separated. Examples of non-single-crystal oxide semiconductors include the aforementioned CAAC-OS and nc -OS exists. In addition, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors and pseudo-amorphous oxides. Amorphous-like oxide semiconductor (a-like OS) This includes conductors, amorphous oxide semiconductors, and so on.

[0257] Here, we will provide details on the CAAC-OS, nc-OS, and a-like OS mentioned above. Give an explanation.

[0258] [CAAC-OS] CAAC-OS has multiple crystalline regions, and these multiple crystalline regions are arranged with their c-axis in a specific direction. It is an oxide semiconductor that is oriented in a particular direction. Note that the specific direction refers to the thickness direction of the CAAC-OS film. The direction normal to the surface on which the CAAC-OS film is formed, or the direction normal to the surface of the CAAC-OS film. Furthermore, a crystalline region is a region in which the atomic arrangement has periodicity. If considered as an arrangement, a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC-O S has a region in the ab-plane direction where multiple crystalline regions are connected, and this region is strained. This can sometimes occur. Note that strain refers to the deformation of the lattice arrangement in a region where multiple crystal regions are connected. Areas where the orientation of the grid arrangement changes between aligned regions and aligned regions with a different grid arrangement. This refers to the fact that CAAC-OS is c-axis oriented and has a clear orientation in the ab-plane direction. It is an oxide semiconductor that does not exist.

[0259] Each of the above multiple crystalline regions consists of one or more minute crystals (with a maximum diameter of 10n It is composed of crystals that are less than m in size. If the crystalline region is composed of one minute crystal, The maximum diameter of the crystalline region is less than 10 nm. Furthermore, the crystalline region is composed of numerous tiny crystals. If this is the case, the size of the crystalline region may be around several tens of nanometers.

[0260] In addition, In-M-Zn oxide (where M is aluminum, gallium, yttrium, and tin) In one or more types selected from titanium, etc., CAAC-OS is indigenous A layer containing ions (In) and oxygen (hereinafter referred to as the In layer), and an element M, zinc (Zn), and oxygen A layered crystalline structure (also called a layered structure) is formed by stacking layers containing (M,Zn) layers. ) tends to have. Furthermore, indium and element M are mutually substitutable. Therefore, The (M,Zn) layer may contain indium. Additionally, the In layer contains the element M. This may occur. Furthermore, the In layer may also contain Zn. This layered structure is, for example, High-resolution TEM (Transmission Electron Microscope) In the image, it is observed as a grid pattern.

[0261] When structural analysis of a CAAC-OS film is performed using, for example, an XRD instrument, the θ / 2θ skid is observed. Out-of-plane XRD measurements using a champ showed a peak indicating c-axis orientation at 2θ. It is detected at 31° or near that angle. Note that the position of the peak indicating c-axis orientation (value of 2θ) This may vary depending on the type and composition of the metal elements that make up CAAC-OS.

[0262] Furthermore, for example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots (spots) may be observed. ) is observed. Note that one spot and another spot are determined by the incident electron beam that has passed through the sample. Observed at a point-symmetric position with respect to the spot (also called a direct spot) as the center of symmetry. .

[0263] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is a hexagonal lattice. While this is the basic principle, the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. Also, In the distortion described, there may be grid arrangements such as pentagons and heptagons. Note that CAAC- In OS, clear grain boundaries can be observed even near strain. It is not possible. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This can be seen. This is because CAAC-OS has a dense arrangement of oxygen atoms in the ab-plane direction. The absence of this, and the change in the bond distance between atoms due to the substitution of metal atoms, can lead to strain. This is thought to be because it allows for tolerance.

[0264] Furthermore, a crystal structure in which clear grain boundaries can be observed is known as polycrystalline. It is called l). The grain boundaries become recombination centers, where carriers are trapped and the transistor is formed This is highly likely to cause a decrease in current, a decrease in field-effect mobility, etc. Therefore, a clear conclusion is reached. CAAC-OS, which lacks visible grain boundaries, has a crystal structure suitable for the semiconductor layer of transistors. It is one of the crystalline oxides. Note that CAAC-OS requires the presence of Zn. The configuration is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are In oxide It is preferable because it can suppress the generation of grain boundaries more effectively than other materials.

[0265] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less prone to a decrease in electron mobility caused by grain boundaries. Furthermore, the crystallinity of oxide semiconductors can decrease due to impurities, defects, etc. Therefore, CAAC-OS is an oxide semiconductor with few impurities and defects (such as oxygen vacancies) It can also be said that oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are heat-resistant and highly reliable. C-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors expands the degree of freedom in the manufacturing process. This becomes possible.

[0266] [nc-OS] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially between 1 nm and 3 nm). It has periodicity in the atomic arrangement in the region of less than nm. In other words, nc-OS is minute It has crystals. The size of these minute crystals is, for example, between 1 nm and 10 nm. In particular, because they are between 1 nm and 3 nm in size, these minute crystals are also called nanocrystals. In nc-OS, no regularity is observed in the crystal orientation between different nanocrystals. Therefore, across the entire film... No orientation is observed. Therefore, nc-OS is a-like OS depending on the analysis method. Alternatively, it may be indistinguishable from amorphous oxide semiconductors. For example, with respect to an nc-OS film, When performing structural analysis using an XRD device, out-of-pla scans using θ / 2θ scans are performed. In ne XRD measurements, no peak indicating crystallinity is detected. Furthermore, compared to nc-OS films... Electron diffraction using electron beams with probe diameters larger than nanocrystals (e.g., 50 nm or larger). When electron diffraction (also called limited-field diffraction) is performed, a diffraction pattern resembling a halo pattern can be observed. It is measured. On the other hand, for the nc-OS film, the size is close to or smaller than that of the nanocrystals. Electron diffraction (nanobeam electron diffraction) using an electron beam with a lobe diameter (e.g., 1 nm to 30 nm) Also called sub-ray diffraction, when this is performed, multiple particles are found within a ring-shaped region centered on the direct spot. In some cases, electron diffraction patterns with multiple spots observed may be obtained.

[0267] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. It is a conductor. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, it has a-like properties. OS has a higher hydrogen concentration in the membrane compared to nc-OS and CAAC-OS.

[0268] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS is a material composition. Regarding.

[0269] [CAC-OS] CAC-OS refers to, for example, metal oxides in which the elements constituting the metal oxide are between 0.5 nm and 10 nm in size. Preferably, a composition of material that is unevenly distributed with a size of 1 nm to 3 nm or near that size. In addition, in the following, in a metal oxide, one or more metal elements are unevenly distributed, The region containing the metallic element is 0.5 nm to 10 nm, preferably 1 nm to 3 nm. The following state, where particles of similar or near-similar size are mixed, is also referred to as a mosaic or patchy appearance.

[0270] Furthermore, CAC-OS is a system where the material separates into a first region and a second region, resulting in a mosaic effect. This results in a cloud-like structure, where the first region is distributed within the membrane (hereinafter also referred to as a cloud-like structure). Therefore, CAC-OS is a mixture of the first region and the second region. It is a composite metal oxide having the following configuration.

[0271] Here, In for the metal elements constituting CAC-OS in In-Ga-Zn oxide The atomic ratios of , Ga, and Zn are denoted as [In], [Ga], and [Zn], respectively. For example, in CAC-OS in In-Ga-Zn oxide, the first region is [ The region where [In] is greater than [In] in the composition of CAC-OS. Also, the second The region is the area where [Ga] is greater than the [Ga] in the composition of CAC-OS. For example, in the first region, [In] is greater than [In] in the second region. Furthermore, the region where [Ga] is smaller than the region where [Ga] is smaller. The region is defined as one in which [Ga] is greater than the [Ga] in the first region, and [In] is greater than the [Ga] in the second region. This is a region smaller than [In] in the region of 1.

[0272] Specifically, the first region mentioned above is mainly composed of indium oxide, indium zinc oxide, etc. This is the region. Furthermore, the second region mentioned above includes gallium oxide, gallium zinc oxide, etc. This is the region in which is the principal component. In other words, the first region described above is called the region in which In is the principal component. It can be replaced. Furthermore, the second region mentioned above can be rephrased as the region with Ga as the main component. It is possible.

[0273] Furthermore, a clear boundary may not be observed between the first region and the second region described above.

[0274] Furthermore, CAC-OS in In-Ga-Zn oxide refers to In, Ga, Zn, and O In the material composition, there is a region where Ga is the main component and a region where In is the main component. This refers to a configuration in which each region is mosaic-like, and these regions exist randomly. Therefore, it is presumed that CAC-OS has a structure in which metallic elements are unevenly distributed. .

[0275] CAC-OS is formed, for example, by sputtering under conditions where the substrate is not heated. This is possible. Also, when forming CAC-OS by sputtering, the film deposition gas is not Select one of the following gases: active gas (typically argon), oxygen gas, and nitrogen gas. One or more may be used. Also, the flow rate of oxygen gas relative to the total flow rate of the film deposition gas during film formation. A lower ratio is preferable; for example, the ratio of the oxygen gas flow rate to the total flow rate of the film deposition gas during film formation is It is preferable that the amount be 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0276] Furthermore, for example, in CAC-OS in In-Ga-Zn oxide, energy-dispersive X Linear spectroscopy (EDX: Energy Dispersive X-ray spectrometer) EDX mapping obtained using scopy revealed a region with In as its main component (1st A structure in which a region (the first region) and a region mainly composed of Ga (the second region) are unevenly distributed and mixed. It can be confirmed that they possess it.

[0277] Here, the first region is a region with higher conductivity compared to the second region. In other words, the first region The flow of carriers through this region causes the metal oxide to exhibit conductivity. Therefore The first region is distributed in a cloud-like manner within the metal oxide, resulting in a high field-effect mobility (μ This can be achieved.

[0278] On the other hand, the second region is a region with higher insulating properties compared to the first region. In other words, the second region By distributing the region within the metal oxide, leakage current can be suppressed.

[0279] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the second region The insulating properties originating from region 2 work complementaryly to create a switching function. (The function to turn it on / off) can be added to CAC-OS. In other words, CAC- An OS has a conductive function in part of the material and an insulating function in part of the material, and has a semiconductor function as a whole. By separating the conductive function and the insulating function, both functions can be enhanced to the maximum extent. Therefore, by using CAC-OS in a transistor, a high on-current (I ), a high field-effect mobility (μ), and a good switching operation can be realized. Moreover, a transistor using CAC-OS has high reliability. Therefore, CAC-OS is optimal for various semiconductor devices including display devices. ), a high field-effect mobility (μ), and a good switching operation can be realized. on )、高い電界効果移動度(μ)、及び良好なスイ ッチング動作を実現することができる。

[0280] また、CAC-OSを用いたトランジスタは、信頼性が高い。従って、CAC-OSは、 表示装置をはじめとするさまざまな半導体装置に最適である。

[0281] Oxide semiconductors have various structures and each has different characteristics. The oxide semiconductor of one aspect of the present invention may have two or more of amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CA C-OS, nc-OS, CAAC-OS. C-OS、nc-OS、CAAC-OSのうち、二種以上を有していてもよい。

[0282] <Transistor having an oxide semiconductor> Next, the case of using the above oxide semiconductor in a transistor will be described.

[0283] By using the above oxide semiconductor in a transistor, a transistor with high field-effect mobility can be realized. Also, a highly reliable transistor can be realized.

[0284] For a transistor, it is preferable to use an oxide semiconductor with a low carrier concentration. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 or less, preferably 1×10 15 cm -3 以下、さらに好ましくは1×10 13 cm-3 More preferably 1 × 10 11 c m -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm -3 That concludes the explanation. Furthermore, when lowering the carrier concentration of the oxide semiconductor film, The impurity concentration in the conductive film can be reduced to lower the defect level density. In this specification, High-purity intrinsic or substantially high-purity intrinsic refers to a substance with a low impurity concentration and a low defect level density. Furthermore, oxide semiconductors with low carrier concentrations are made of high-purity intrinsic or substantially high-purity intrinsic material. It is sometimes called an oxide semiconductor.

[0285] Furthermore, oxide semiconductor films that are high-purity intrinsic or substantially high-purity intrinsic have a low defect level density. Therefore, the trap level density may also be low.

[0286] Furthermore, the time required for charges trapped in the trap levels of oxide semiconductors to disappear is long. Furthermore, it can behave as if it were a fixed charge. Therefore, it can behave as if it were a fixed charge. Transistors in which a channel formation region is formed in an oxide semiconductor exhibit unstable electrical properties. There are cases where this is the case.

[0287] Therefore, in order to stabilize the electrical characteristics of the transistor, the impurity concentration in the oxide semiconductor must be Reducing it is effective. Also, in order to reduce the impurity concentration in oxide semiconductors, It is also preferable to reduce the concentration of impurities in the contacting film. Examples of impurities include hydrogen, nitrogen, and aluminum. Examples include potash metals, alkaline earth metals, iron, nickel, and silicon.

[0288] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0289] In oxide semiconductors, if silicon or carbon, which are among the Group 14 elements, are present, acid Defect levels are formed in oxide semiconductors. Therefore, silicon in oxide semiconductors... Or the concentration of carbon and the concentration of silicon or carbon near the interface with the oxide semiconductor (secondary ions) Secondary Ion Mass Spectrometer (SIMS) The concentration obtained by (ry) is 2 × 10 18 atoms / cm 3 The following is preferably 2× 10 17 atoms / cm 3 The following applies:

[0290] Furthermore, if alkali metals or alkaline earth metals are present in the oxide semiconductor, defect levels are formed. This can result in the generation of carriers. Therefore, alkali metals or alkaline earth metals Transistors using oxide semiconductors containing this material tend to exhibit normally-on characteristics. Therefore, alkali metals or alkaline earth metals in oxide semiconductors obtained by SIMS The concentration of 1 × 10 18 atoms / cm 3 The following is preferably 2 × 10 16 atom / cm 3 Do the following:

[0291] Furthermore, in oxide semiconductors, when nitrogen is present, electrons, which are carriers, are generated. The concentration increases, making it easier to convert to n-type. As a result, oxide semiconductors containing nitrogen become semiconductors. The transistor used tends to exhibit normally-on characteristics. Alternatively, in oxide semiconductors... If nitrogen is present, a trap level may be formed. As a result, the transistor Electrical properties may become unstable. For this reason, in oxide semiconductors obtained by SIMS... The nitrogen concentration is 5 × 10 19 atoms / cm 3 Less than 5 × 10 18 Atom s / cm 3 More preferably 1 × 10 18 atoms / cm 3 More preferably, is 5 x 10 17 atoms / cm 3 Do the following:

[0292] Furthermore, the hydrogen contained in oxide semiconductors reacts with the oxygen bonded to the metal atoms to form water. This can sometimes form an oxygen vacancy. When hydrogen enters this oxygen vacancy, the electrons, which are carriers, In some cases, this can be generated. Also, some of the hydrogen combines with oxygen that is bonded to a metal atom, resulting in a It can generate electrons, which are rear electrons. Therefore, using an oxide semiconductor containing hydrogen... Transistors tend to exhibit normally-on characteristics. Therefore, hydrogen in oxide semiconductors It is preferable that it be reduced as much as possible. Specifically, in oxide semiconductors, SIM The hydrogen concentration obtained by S is 1 × 10 20 atoms / cm 3 Less than 1 × 1 0 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 less than, More preferably 1 × 10 18 atoms / cm 3 Make it less than.

[0293] Using oxide semiconductors with sufficiently reduced impurities in the channel formation region of transistors. This allows for the provision of stable electrical characteristics.

[0294] This embodiment can be combined with other embodiments as appropriate.

[0295] (Embodiment 5) In this embodiment, an electronic device according to one aspect of the present invention will be described using Figures 13 to 17. do.

[0296] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. Such display devices can be easily made higher resolution and higher definition. Therefore, various electronic devices It can be used in the display unit.

[0297] Examples of electronic devices include television equipment, desktop or notebook computers, etc. Sony Computer, monitors for computers, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, and digital cameras Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples include sound reproduction devices.

[0298] In particular, the display device according to one aspect of the present invention is capable of increasing resolution, making it suitable for relatively small displays. It can be suitably used in electronic devices having an indicator. For example, For example, a wristwatch-type and bracelet-type information terminal (wearable device), and a headset VR devices such as monitor displays, AR devices in the form of glasses, and MR devices. Examples include wearable devices that can be attached to the head.

[0299] A display device according to one aspect of the present invention is HD (1280 x 720 pixels) and FHD (192 pixels). 0x1080), WQHD (2560x1440 pixels), WQXGA (2560 pixels) 1600x1600, 4K (3840x2160 pixels), 8K (7680x4320 pixels) It is preferable to have an extremely high resolution, such as 4K, 8K, or higher. The resolution shown above is preferable. Also, the pixel density in a display device according to one aspect of the present invention ( The resolution is preferably 100 ppi or higher, preferably 300 ppi or higher, and 500 ppi. The above is more preferable, 1000 ppi or more is more preferable, and 2000 ppi or more is more preferable. More preferably 3000ppi or higher, more preferably 5000ppi or higher, 70 00ppi or higher is even more preferable. Thus, high resolution and high detail, or both. By using a display device that has this method, portable or personal-use devices such as those for home use can be developed. In sub-devices, it becomes possible to further enhance the sense of presence and depth. There are no particular limitations on the aspect ratio of the display device in one embodiment. For example, The display device supports various aspect ratios such as 1:1 (square), 4:3, 16:9, and 16:10. I can respond.

[0300] The electronic device of this embodiment has sensors (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation (including functions for measuring radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation) It's fine if you do that.

[0301] The electronic device of this embodiment can have various functions. For example, it can display various information (static Functions to display still images, videos, text images, etc. on the display unit, touch panel function, calendar - Functions to display the date or time, and to run various software (programs) Functions, wireless communication functions, and functions to read programs or data recorded on recording media. It may have the following:

[0302] Using Figures 13A, 13B, 14A, and 14B, a wearable device that can be worn on the head. Let me explain an example of a device. These wearable devices have the function of displaying AR content, and It has one or both of the functions of displaying VR content. The device has the ability to display SR or MR content in addition to AR and VR. This is also good. Electronic devices have the ability to display content such as AR, VR, SR, and MR. This makes it possible to enhance the user's sense of immersion.

[0303] Electronic device 700A shown in Figure 13A and electronic device 700B shown in Figure 13B are, respectively , a pair of display panels 751, a pair of housings 721, a communication unit (not shown), and a pair of mounting units The mounting section 723, the control unit (not shown), the imaging unit (not shown), and a pair of optical members 75 It comprises 3, a frame 757, and a pair of nose pads 758.

[0304] A display device according to one aspect of the present invention can be applied to the display panel 751. This allows for the creation of electronic devices capable of displaying extremely high resolution.

[0305] Electronic equipment 700A and electronic equipment 700B each have a display area 7 of the optical element 753. The image displayed on the display panel 751 can be projected onto 56. The optical element 753 is transparent. Because it is luminescent, the user superimposes the displayed area onto the transmitted image visible through the optical element 753. Images displayed in the area can be viewed. Therefore, electronic equipment 700A, and electronic equipment Each of the 700B devices is an electronic device capable of displaying augmented reality (AR).

[0306] Electronic equipment 700A and electronic equipment 700B are equipped with an imaging unit that captures images of the area in front. A camera capable of doing so may be provided. Also, electronic equipment 700A and electronic equipment 700 Each of the B units is equipped with an accelerometer such as a gyroscope, which detects the direction of the user's head. It can also detect movement and display an image corresponding to its orientation in the display area 756.

[0307] The communications unit has a wireless communication device, which can supply video signals and the like. Furthermore, video signals and power potential are supplied in place of, or in addition to, the wireless communication device. It may be equipped with a connector to which a cable can be connected.

[0308] Furthermore, electronic devices 700A and 700B are equipped with batteries, It can be charged by either a wire or a cable, or both.

[0309] The housing 721 may be provided with a touch sensor module. The sensor has the function of detecting when the outer surface of the housing 721 is touched. The submodule detects user tap or slide operations and performs various processes. It is possible to perform actions such as pausing or resuming a video by tapping. The process can then be executed, and the slide operation can be used to fast-forward or rewind. This makes it possible to perform actions such as [specific actions]. In addition, each of the two housings 721 has a touch sensor module. By adding a loop, the range of operations can be broadened.

[0310] Various touch sensors can be applied to the touch sensor module. For example, Capacitive type, resistive type, infrared type, electromagnetic induction type, surface acoustic wave type, optical type, etc. Various methods can be employed. In particular, capacitive or optical sensors can be used. It is preferable to apply it to a touch sensor module.

[0311] When using an optical touch sensor, the light-receiving device (also called a light-receiving element) is: Photoelectric conversion devices (also called photoelectric conversion elements) can be used. The active layer can be made of either an inorganic semiconductor or an organic semiconductor, or both.

[0312] Electronic device 800A shown in Figure 14A and electronic device 800B shown in Figure 14B are, respectively , a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, control It has a section 824, a pair of imaging sections 825, and a pair of lenses 832.

[0313] A display device according to one aspect of the present invention can be applied to the display unit 820. This allows for the creation of electronic devices capable of displaying high resolution. This enables users to experience high levels of immersion. It can give the impression of being present.

[0314] The display unit 820 is located inside the housing 821 in a position where it can be seen through the lens 832. Furthermore, by displaying different images on a pair of display units 820, a 3D display using parallax can be created. It is also possible to perform demonstrations.

[0315] Electronic devices 800A and 800B are electronic devices designed for VR. This is possible. Users with electronic device 800A or electronic device 800B attached can use lens 83 Through 2, the image displayed on the display unit 820 can be viewed.

[0316] Electronic equipment 800A and electronic equipment 800B each include a lens 832 and a display unit 82 The left and right positions of these points can be adjusted so that point 0 is in the optimal position according to the user's eye position. It is preferable to have a mechanism that can change the distance between the lens 832 and the display unit 820. It is preferable that the device has a mechanism for adjusting the focus.

[0317] The attachment part 823 allows the user to attach the electronic device 800A or electronic device 800B to their head. This is possible. Note that in Figure 14A, etc., the temples of the glasses (joints, temples) The example shown is a shape like (also known as), but it is not limited to this. The mounting part 823 is It is sufficient that the user can wear it; for example, it may be in the shape of a helmet or a band. .

[0318] The imaging unit 825 has the function of acquiring external information. The data acquired by the imaging unit 825 The display unit 820 can output the data. The imaging unit 825 uses an image sensor. This is possible. Furthermore, multiple cameras are provided to accommodate multiple focal lengths such as telephoto and wide-angle. That's fine.

[0319] Although an example with an imaging unit 825 is shown here, it is possible to measure the distance of an object. A distance measuring sensor (hereinafter also referred to as the detection unit) should be provided. That is, the imaging unit 825 detects This is one aspect of the detection unit. The detection unit may be, for example, an image sensor or a LiDAR sensor. DAR (Light Detection and Ranging) and other distance imaging systems A sensor can be used. Images obtained by the camera and images obtained by the depth image sensor By using the images, more information can be obtained, and gestures can be made with higher accuracy. It can be made possible to operate it.

[0320] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, the vibration is transmitted to one or more of the display unit 820, housing 821, and mounting unit 823. A configuration with a moving mechanism can be applied. This allows for the separate use of headphones, earphones, etc. It does not require any audio equipment such as headphones or speakers; simply by attaching the electronic device 800A... You can enjoy the video and audio.

[0321] Electronic equipment 800A and electronic equipment 800B may each have an input terminal. The input terminal receives video signals from video output devices, etc., and batteries located within the electronic device. A cable can be connected to supply power for charging the device.

[0322] An electronic device according to one aspect of the present invention may have a function for wireless communication with earphones 750. The earphone 750 has a communication unit (not shown) and has wireless communication capabilities. The 0WON 750 receives information (e.g., voice data) from electronic devices via wireless communication. For example, the electronic device 700A shown in Figure 13A can communicate via wireless communication. It has the function of transmitting information to the Yahoo! 750. Also, for example, the electronic device shown in Figure 14A. The 800A has the function of transmitting information to the earphone 750 via wireless communication.

[0323] Furthermore, the electronic device may have an earphone section. The electronic device 700B shown in Figure 13B is It has an earphone unit 727. For example, the earphone unit 727 and the control unit are wired to each other. The connected configuration can be configured. The wiring connecting the earphone unit 727 and the control unit Some of them may be located inside the housing 721 or the mounting portion 723.

[0324] Similarly, the electronic device 800B shown in Figure 14B has an earphone unit 827. For example, The earphone unit 827 and the control unit 824 can be configured to be connected to each other by a wire. A portion of the wiring connecting the earphone unit 827 and the control unit 824 is connected to the housing 821 or the mounting It may be located inside part 823. Also, the earphone part 827 and the mounting part 823 It may have a magnet. This allows the earphone part 827 to be magnetically attached to the mounting part 823. This allows for secure fastening, making storage easier and thus preferable.

[0325] Furthermore, electronic devices have an audio output that can connect to earphones or headphones. It may have terminals. Also, electronic devices may have either an audio input terminal or an audio input mechanism. It may have both. As an audio input mechanism, for example, a sound collection device such as a microphone may be used. It is possible. By having an electronic device with an audio input mechanism, the electronic device can have a so-called headset. You may also add functionality as a doset.

[0326] Thus, as an electronic device according to one aspect of the present invention, there is a spectacle-type (electronic device 700A, and, Electronic equipment 700B, etc.) and goggle type (electronic equipment 800A, and electronic equipment 800B, etc.) Both (1) and (2) are preferable.

[0327] Furthermore, an electronic device according to one aspect of the present invention transmits information to earphones via wired or wireless means. It is possible.

[0328] The electronic device 6500 shown in Figure 15A is a portable information device that can be used as a smartphone. It is a terminal device.

[0329] The electronic device 6500 consists of a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, includes speaker 6505, microphone 6506, camera 6507, and light source 6508, etc. The display unit 6502 is equipped with a touch panel function.

[0330] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0331] Figure 15B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0332] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. Within the space surrounded by the protective member 6510, there is a display panel 6511, an optical member 6512, and a touch The sensor panel 6513, printed circuit board 6517, battery 6518, etc. are located here. .

[0333] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The 6513 is fixed by an adhesive layer (not shown).

[0334] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back. The FPC6515 is connected to the folded portion. C6516 is mounted. FPC6515 is located on the edge of the printed circuit board 6517. It is connected to the child.

[0335] A flexible display according to one aspect of the present invention can be applied to the display panel 6511. This makes it possible to create extremely lightweight electronic devices. Also, the display panel 6511 is extremely Because it is thin, it is possible to keep the thickness of electronic devices down while also equipping them with a large-capacity 6518 battery. Also, a part of the display panel 6511 is folded back, and the FPC6515 is attached to the back of the pixel area. By positioning the connection points, it is possible to realize electronic devices with narrow bezels.

[0336] Figure 16A shows an example of a television system. The television system 7100 is housed in a casing 7101 The display unit 7000 is incorporated into it. Here, the stand 7103 connects to the housing 7101. This shows a configuration that supports this.

[0337] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0338] The television device 7100 shown in Figure 16A is operated using the control switches provided on the housing 7101. , and can be performed by a separate remote control unit 7111. Alternatively, the display unit 700 It may also be equipped with a touch sensor, and by touching the display unit 7000 with a finger, etc., the TV will The control device 7100 may be operated. The remote control operator 7111 is the remote control operator 71 It may have a display unit that displays the information output from 11. The channel and volume can be controlled using the built-in control keys or touch panel. The video displayed on the display unit 7000 can be operated.

[0339] The television system 7100 will consist of a receiver and a modem, etc. This allows you to receive regular television broadcasts. Additionally, you can receive them via a modem using either a wired or wireless connection. By connecting to a line communication network, one-way (sender to receiver) or bidirectional communication is possible. It is also possible to communicate information in a direction (between a sender and receiver, or between receivers). ru.

[0340] Figure 16B shows an example of a notebook personal computer. The computer 7200 consists of a chassis 7211, a keyboard 7212, and a pointing device 721. 3. It has external connection ports 7214, etc. The display unit 7000 is incorporated into the housing 7211. It is.

[0341] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0342] Figures 16C and 16D show examples of digital signage.

[0343] The digital signage 7300 shown in Figure 16C consists of a housing 7301, a display unit 7000, and a screen. It has a Pika 7303, etc. Furthermore, it has an LED lamp, an operation key (power switch, or operation key). It may include a switch, connection terminals, various sensors, a microphone, etc.

[0344] Figure 16D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is installed along the curved surface of the column 7401. do.

[0345] In Figures 16C and 16D, a display device according to one embodiment of the present invention is applied to the display unit 7000. It is possible.

[0346] The larger the display area 7000, the more information can be provided at once. The wider the area (7000), the more easily it catches people's attention, which can, for example, enhance the effectiveness of advertising. Cut.

[0347] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is desirable that it not only displays information but also allows users to operate it intuitively. Furthermore, route information is also available. Or, when used for purposes such as providing traffic information, intuitive operation is possible. It can improve usability.

[0348] Furthermore, as shown in Figures 16C and 16D, the digital signage 7300 or digital signage Inage 7400 is an information terminal 7311 or other information device owned by the user, such as a smartphone. It is preferable that the information terminal 7411 can be communicated with wirelessly. For example, the display unit 70 The advertisement information displayed at 00 is shown on the screen of information terminal 7311 or information terminal 7411. It can be displayed. Also, by operating the information terminal 7311 or information terminal 7411 This allows you to switch the display on the 7000 display unit.

[0349] In addition, the information terminal 7 is connected to the digital signage 7300 or digital signage 7400. Execute a game using the screen of either the 311 or the information terminal 7411 as the control device (controller). It is also possible to allow this. This allows an unspecified number of users to participate in the game and enjoy it simultaneously. It is possible.

[0350] The electronic equipment shown in Figures 17A to 17F consists of a housing 9000, a display unit 9001, and a speaker 90 03. Operation key 9005 (including power switch or operation switch), connection terminal 900 6. Sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, Magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow rate, humidity (Including functions for measuring degrees, incline, vibration, odor, or infrared radiation), Microphone 90 It has 08, etc.

[0351] In Figures 17A to 17F, a display device according to one embodiment of the present invention is applied to the display unit 9001. It is possible.

[0352] The electronic devices shown in Figures 17A to 17F have various functions. For example, they can display various information (static Functions to display still images, videos, text images, etc. on the display unit, touch panel function, calendar - Functions that display the date or time, etc., processed by various software (programs) Functions to control the system, wireless communication functions, programs or data recorded on the recording medium. It may have functions such as reading and processing data. However, the functions of electronic devices are not limited to these. It is not limited to having multiple displays, and can have various functions. Furthermore, an electronic device may be equipped with a camera, etc., to capture still images or videos, and the recording medium (external or It has functions such as saving to the camera (built into the camera), and displaying the captured image on the display unit. That's fine.

[0353] The details of the electronic equipment shown in Figures 17A to 17F will be explained below.

[0354] Figure 17A is a perspective view showing the personal digital assistant 9101. The personal digital assistant 9101 is, for example, It can be used as a smartphone. Note that the mobile information terminal 9101 has a speaker. 9003, connection terminal 9006, sensor 9007, etc. may be provided. Also, portable information terminal 9 101 can display text and image information on its multiple surfaces. In Figure 17A, there are three This shows an example of displaying icon 9050. Also, information 9051, indicated by a dashed rectangle, is shown. The information can also be displayed on other sides of the display unit 9001. An example of information 9051 is electronic data. Notifications of incoming calls, SNS messages, and phone calls; subject and sender name of emails or SNS messages; It includes the date, time, battery level, signal strength, etc. Or, information 9051 is displayed. You may display an icon such as 9050 at the location where the character is located.

[0355] Figure 17B is a perspective view showing the personal digital assistant 9102. The personal digital assistant 9102 displays It has the function of displaying information on three or more sides of section 9001. Here, information 9052, information 9 This shows an example where information 053 and 9054 are displayed on different sides. For example, the user: With the mobile information terminal 9102 stored in the breast pocket of clothing, on top of the mobile information terminal 9102 The information 9053 displayed in a position visible from the user can also be viewed. You can check the display without taking the 9102 mobile information terminal out of your pocket, for example, to answer a phone call. It is possible to determine whether or not this is true.

[0356] Figure 17C is a perspective view showing a wristwatch-type personal information terminal 9200. Personal information terminal 920 0 can be used, for example, as a smartwatch (registered trademark). Also, the display unit 9 001 has a curved display surface, and can display along the curved display surface. Furthermore, the portable information terminal 9200 can communicate with, for example, a wireless communication headset. This allows for hands-free calling. Furthermore, the 9200 mobile information terminal... The connection terminal 9006 allows for mutual data transmission with other information terminals and for charging. It is also possible to do so. Furthermore, charging can be performed via wireless power supply.

[0357] Figures 17D to 17F are perspective views showing a foldable portable information terminal 9201. Figure 17D shows the mobile information terminal 9201 in its unfolded state, Figure 17F shows it in its folded state, and Figure 1 Figure 7E is a perspective view showing the transitional state from one of Figure 17D to the other. The 9201 information terminal offers excellent portability when folded and a seamless, wide design when unfolded. The display area provides excellent readability. The display unit 9001 of the portable information terminal 9201 It is supported by three housings 9000 connected by hinges 9055. For example, The display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0358] This embodiment can be combined with other embodiments as appropriate. [Explanation of symbols]

[0359] 100A: Display device, 100B: Display device, 100C: Display device, 100: Display device, 1 01: Layer containing transistors, 110a: Sub-pixel, 110b: Sub-pixel, 110c: Sub-pixel , 110: pixel, 111a: pixel electrode, 111b: pixel electrode, 111c: pixel electrode, 11 1: conductive film, 113a: first layer, 113b: second layer, 113c: third layer, 114: Electron injection layer, 115: common electrode, 116: fourth electron transport layer, 118A: first sacrificial layer, 118a: First layer of sacrifice, 118B: Second layer of sacrifice, 118b: Second layer of sacrifice, 118C : Third sacrificial layer, 118c: Third sacrificial layer, 119: Resin layer, 120: Substrate, 123: Conductor Layer, 130a: light-emitting device, 130b: light-emitting device, 130c: light-emitting device, 1 31: Protective layer, 132: Protective layer, 133: Gap, 134: Insulator, 140: Connection, 18 1A: First hole injection layer, 181a: First hole injection layer, 181B: Second hole injection layer, 181b: Second hole injection layer, 181C: Third hole injection layer, 181c: Third hole injection Layer, 182A: First hole transport layer, 182a: First hole transport layer, 182B: Second hole Transport layer, 182b: second hole transport layer, 182C: third hole transport layer, 182c: third Hole transport layer, 183A: first light-emitting layer, 183a: first light-emitting layer, 183B: second light-emitting layer Layer, 183b: second light-emitting layer, 183C: third light-emitting layer, 183c: third light-emitting layer, 18 4A: First electron transport layer, 184a: First electron transport layer, 184B: Second electron transport layer, 184b: Second electron transport layer, 184C: Third electron transport layer, 184c: Third electron transport layer Layer, 190a: Resist mask, 190b: Resist mask, 190c: Resist mask , 240: capacitance, 241: conductive layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 271: plug, 274a: conductive layer, 274b: conductive layer, 274: plug, 280: display module, 28 1: Display unit, 282: Circuit unit, 283a: Pixel circuit, 283: Pixel circuit unit, 284a: Image Element, 284: Pixel section, 285: Terminal section, 286: Wiring section, 290: FPC, 291: Circuit board 292: substrate, 301: substrate, 310: transistor, 311: conductive layer, 312: low resistor Anti-region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 320: transistor 321: Semiconductor layer, 323: Insulating layer, 324: Conductive layer, 325: Conductive layer, 326: Insulation Layer, 327: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: insulating layer , 700A: Electronic equipment, 700B: Electronic equipment, 721: Housing, 723: Mounting part, 727: Earphone section, 750: Earphone, 751: Display panel, 753: Optical components, 756: Display area, 757: Frame, 758: Nose pad, 772: Electrode, 786a: EL layer, 7 86b:EL layer, 786:EL layer, 788:electrode, 800A:electronic device, 800B:electronic Equipment, 820: Display unit, 821: Housing, 822: Communication unit, 823: Mounting unit, 824: Control Section, 825: Imaging section, 827: Earphone section, 832: Lens, 4411: Light-emitting layer, 44 12: Emitting layer, 4413: Emitting layer, 4420: Layer, 4421: Layer, 4422: Layer, 443 0: layer, 4431: layer, 4432: layer, 4440: intermediate layer, 6500: electronic device, 650 1: Enclosure, 6502: Display unit, 6503: Power button, 6504: Button, 6505: S Pika, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective component, 6511: Display panel, 6512: Optical component, 6513: Touch sensor panel, 6515 :FPC, 6516:IC, 6517:Printed circuit board, 6518:Battery, 7000: Display unit, 7100: Television equipment, 7101: Housing, 7103: Stand, 7111 : Remote control unit, 7200: Notebook personal computer, 7211: Enclosure, 72 12: Keyboard, 7213: Pointing device, 7214: External connection port, 7 300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal Last unit, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000 : Enclosure, 9001: Display unit, 9003: Speaker, 9005: Operation keys, 9006: Connection Terminals, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101 : Mobile information terminal, 9102: Mobile information terminal, 9200: Mobile information terminal, 9201: Mobile information Information terminal

Claims

1. It comprises an insulating layer, a first light-emitting device having a region in contact with the upper surface of the insulating layer, and a second light-emitting device having a region in contact with the upper surface of the insulating layer, The first light-emitting device described above includes at least a first pixel electrode and an electron transport layer, The second light-emitting device comprises at least a second pixel electrode and the electron transport layer, The electron transport layer comprises at least a region in contact with the upper surface of the insulating layer, a region in contact with the side surface of the insulating layer, a region in contact with the side surface of the first pixel electrode, and a region in contact with the side surface of the second pixel electrode.

2. It comprises an insulating layer, a first light-emitting device having a region in contact with the upper surface of the insulating layer, and a second light-emitting device having a region in contact with the upper surface of the insulating layer, The first light-emitting device described above includes at least a first pixel electrode and an electron transport layer, The second light-emitting device comprises at least a second pixel electrode and the electron transport layer, The electron transport layer has at least a region in contact with the upper surface of the insulating layer, a region in contact with the side surface of the insulating layer, a region in contact with the side surface of the first pixel electrode, and a region in contact with the side surface of the second pixel electrode. A display device having an insulating material in contact with the upper surface of the electron transport layer in a region where the electron transport layer is in contact with the upper surface of the insulating layer.

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