Substrate processing equipment

Abstract

The present invention provides a substrate processing apparatus that can improve temperature uniformity in the circumferential direction of a substrate. [Solution] The substrate processing apparatus 1 of the embodiment has a rotating table 11 that rotates the substrate W held by the holding member 12, which is separated from the substrate W and has a larger diameter than the substrate W, and has a processing liquid supply unit 20 that supplies processing liquid Lp to the side of the rotating substrate W opposite to the opposing surface 11a, and a heating unit 50 that irradiates heating light from above the side of the substrate W to which the processing liquid Lp is supplied, and the opposing surface 11a has a light absorption rate of 90% or more in a region that does not overlap with the substrate W in a plan view.

Description

Technical Field

[0004] , ,

[0006] , ,

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[0001] The present invention relates to a substrate processing apparatus.

Background Art

[0002] There is known a single-wafer substrate processing apparatus that holds the outer peripheral edge of a substrate such as a semiconductor wafer by a holding portion, rotates the held substrate by a rotating table, supplies a processing liquid to the substrate, and performs an etching process, a resist removal process, or the like. In such a substrate processing apparatus, the temperature of the processing liquid is increased by heating the substrate being processed or the processing liquid on the substrate during processing, thereby improving the processing efficiency.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] As an example of a heating method in a substrate processing apparatus, there is heating by light irradiation. For example, there is a substrate processing apparatus in which a light source that emits heating light is arranged so as to face a substrate held on a rotating table. Since the substrate or the processing liquid on the substrate is heated by the light emitted from the light source, the processing efficiency can be improved.

[0005] In a substrate processing apparatus using a heating method by light, part of the light emitted from the light source travels outward from the substrate and enters a structure around the substrate. Then, the light is reflected by the structure, and the reflected light enters the substrate. For example, since the outer peripheral region of the rotating table, which is a structure, is not blocked by the substrate, the rotating table reflects the light from the light source. As a result, the substrate or the processing liquid on the substrate is heated not only by the light from the light source but also by the reflected light from the structure.

[0006] However, in the area where the retaining member that holds the outer edge of the substrate is provided, reflected light is blocked. As a result, in the outer region of the substrate, there are areas that are heated by reflected light and areas that are not heated by reflected light. In other words, since there is no heating by reflected light near the retaining member, the temperature becomes lower than in other areas, and the uniformity of the circumferential processing rate (amount processed per unit time) in the outer region of the substrate decreases.

[0007] Embodiments of the present invention have been proposed to solve the above-mentioned problems, and their objective is to provide a substrate processing apparatus that can improve temperature uniformity in the circumferential direction of the substrate. [Means for solving the problem]

[0008] The substrate processing apparatus according to the embodiment includes a rotating table that rotates the substrate held by the holding member, which is positioned at a distance from the substrate and has an opposing surface with a larger diameter than the substrate, and whose outer peripheral end is held by a holding member; a processing liquid supply unit that supplies processing liquid to the surface of the rotating substrate opposite to the opposing surface; and a heating unit that irradiates heating light from above the surface of the substrate to which the processing liquid is supplied, wherein at least the region of the opposing surface that does not overlap with the substrate in a plan view has a light absorption rate of 90% or more.

[0009] Furthermore, the substrate processing apparatus according to the embodiment includes a rotating holding unit that rotates the substrate held by a holding member, a processing liquid supply unit that supplies processing liquid to the upper surface of the rotating substrate, a heating unit that irradiates heating light from above the upper surface of the substrate, and a cup that covers the outer circumference of the rotating substrate at a distance from the substrate, wherein at least the inner wall of the cup has a light absorption rate of 90% or more. [Effects of the Invention]

[0010] According to embodiments of the present invention, it is possible to improve the temperature uniformity in the circumferential direction of the substrate. [Brief explanation of the drawing]

[0011] [Figure 1] This is a partial axial cross-sectional view showing the supply of processing liquid in the substrate processing apparatus of the first embodiment. [Figure 2] This is a partial cross-sectional view in the axial direction showing the supply of rinsing solution in the substrate processing apparatus shown in Figure 1. [Figure 3] This is a partial axial cross-sectional view showing the loading and unloading of substrates in the substrate processing apparatus shown in Figure 1. [Figure 4] These are plan views (A) showing the open position of the retaining member in the rotary table and (B) showing the closed position. [Figure 5] This is a flowchart showing the processing procedure of the embodiment. [Figure 6] This is a partial cross-sectional view in the axial direction showing the supply of processing liquid to the substrate processing apparatus of the second embodiment. [Figure 7] This is a partial cross-sectional view in the axial direction showing the supply of processing liquid to the substrate processing apparatus of the third embodiment. [Figure 8] Plan view (A) shows a modified version in which the ring-shaped area that does not overlap the substrate of the rotating table is black, and plan view (B) shows a modified version in which the ring-shaped area inside (A) is also black. [Figure 9] This table shows the properties of general PTFE (white) and conductive PTFE (black) in relation to light. [Figure 10] This graph shows the difference in etching amount at different circumferential positions when the rotary table is made of white PTFE. [Figure 11] This graph shows the difference in etching amount at different circumferential positions when the rotary table is made of black conductive PTFE. [Modes for carrying out the invention]

[0012] Hereinafter, embodiments of the present invention will be described with reference to the drawings. [overview] As shown in FIG. 1, the substrate processing apparatus 1 according to the embodiment processes the substrate W by rotating the substrate W held by the rotation holding unit 10 and supplying the processing liquid Lp from the processing liquid supply unit 20 to the substrate W. The substrate processing apparatus 1 is a single-wafer apparatus that supplies a processing liquid Lp having etching ability to the substrate W to perform an etching process. As shown in FIG. 2, the substrate processing apparatus 1 performs a rinsing process by supplying the rinsing liquid Lc from the rinsing liquid supply unit 30 to the substrate W before and after the supply of the processing liquid Lp.

[0013] The substrate processing apparatus 1 has a heating unit 50 that heats the substrate W by irradiating light. The heating unit 50 has a light source that irradiates light having a wavelength for heating the substrate W to heat the substrate W itself. That is, the object heated by the heating unit 50 is the substrate W.

[0014] The substrate W to be processed is, for example, a disk-shaped silicon wafer (hereinafter referred to as a Si substrate) having a silicon nitride film and a silicon oxide film formed on its surface. The processing liquid Lp is, for example, an aqueous solution containing phosphoric acid (hereinafter referred to as a phosphoric acid solution). The concentration of phosphoric acid in the processing liquid Lp is, for example, 85 to 94 wt%. The rinsing liquid Lc is, for example, pure water (H2O).

[0015] [First Embodiment] First, the substrate processing apparatus 1 according to the first embodiment will be described. [Configuration] As shown in FIG. 1, the substrate processing apparatus 1 according to the first embodiment has a rotation holding unit 10, a processing liquid supply unit 20, a rinsing liquid supply unit 30, a recovery unit 40, a heating unit 50, a lifting mechanism 60, and a control device 70.

[0016] <时间戳:2024-07-15 10:30:00> (Rotation Holding Unit) The rotation holding unit 10 holds the substrate W by a holding member 12 to be described later and rotates the held substrate W. The rotation holding unit 10 has a rotation table 11, a holding member 12, a housing unit 13, and a driving unit 14.

[0017] <Rotation Table> The rotary table 11 has an opposing surface 11a that is spaced apart from the substrate W held by the holding member 12. The rotary table 11 is a cylindrical member, and its upper end is closed by the circular opposing surface 11a. The opposing surface 11a has a larger diameter than the substrate W.

[0018] The opposing surface 11a has a high light (electromagnetic wave) absorption rate. A high light absorption rate means that the light absorption rate is 90% or higher. The light referred to here is the light irradiated by the heating unit 50, which will be described later. The opposing surface 11a only needs to have a light absorption rate of 90% or higher in areas that do not overlap with the substrate W in a plan view. However, in this embodiment, as shown in Figures 4(A) and (B), the entire opposing surface 11a has a light absorption rate of 90% or higher. In Figures 1 to 4, configurations with a light absorption rate of 90% or higher are indicated by cross hatching.

[0019] The opposing surface 11a has the light absorption rate described above because it is made of a black material. For example, by making the opposing surface 11a black with a carbon-containing material, the light absorption rate can be made 90% or more. More specifically, conductive PTFE (polytetrafluoroethylene) containing carbon can be used for the opposing surface 11a. Alternatively, a black material may be applied to the opposing surface 11a.

[0020] In this embodiment, as shown in Figure 1, not only the opposing surface 11a but also the side surface 11b of the rotary table 11 has a light absorption rate of 90% or more. To achieve this, both the opposing surface 11a and the side surface 11b should be configured to be black, as described above.

[0021] <Retaining member> The holding member 12 is a member that holds the outer edge of the substrate W so as to face the opposing surface 11a with a gap between them. As shown in Figures 1, 4(A), and (B), the holding member 12 protrudes from the rotary table 11 and is provided in multiples at equal intervals along positions corresponding to the outer edge of the substrate W. The holding member 12 is provided to be movable between a closed position, which is in contact with the outer edge of the substrate W and holds the substrate W, and an open position, which is away from the outer edge of the substrate W and releases the substrate W, by an opening and closing mechanism (not shown).

[0022] The retaining member 12, like the opposing surface 11a, has a light absorption rate of 90% or more. In this embodiment, the entire retaining member 12 has a light absorption rate of 90% or more. The retaining member 12 is made black by using a carbon-containing material to achieve a light absorption rate of 90% or more. For example, conductive PTFE (polytetrafluoroethylene) containing carbon is used for the retaining member 12.

[0023] The retaining member 12 has a base 121, a guide 122, and a pin 123. All of these components—base 121, guide 122, and pin 123—have a light absorption rate of 90% or more.

[0024] The base 121 is a cylindrical member that can rotate around an axis parallel to the axis of the rotary table 11. Three or more bases 121 are arranged along a circle centered on the axis of the rotary table 11. This circle corresponds to the outer circumference of the substrate W positioned around the axis. In this embodiment, as shown in Figures 4(A) and (B), six bases 121 are arranged at equal intervals in the circumferential direction. The top surface of each base 121 is exposed from the rotary table 11. Each base 121 is provided to be synchronously rotatable by an opening and closing mechanism (not shown).

[0025] As shown in Figures 1 to 3, the guide 122 is a plate-like structure raised from the top surface of the base 121. The guide 122 has an inclined surface that rises towards the outer circumference of the rotary table 11. The pin 123 is a cylinder located eccentrically from the axis of the base 121 and is provided on the top of the guide 122. The pin 123 widens in diameter upwards, so its outer surface is an inverse tapered surface.

[0026] The pin 123 moves between an open position and a closed position in accordance with the rotation of the base 121. In the closed position shown in Figure 4(B), the pin 123 holds the substrate W by contacting the outer edge of the substrate W. In the open position shown in Figure 4(A), the pin 123 releases the substrate W by moving away from it. In this embodiment, the six pins 123 contact the substrate W in a synchronous manner, holding the substrate W so that its center coincides with the axis of the rotary table 11.

[0027] Furthermore, with pin 123 in the open position, the substrate W is placed on the inclined surface of guide 122 (see Figures 3 and 4(A)). Then, as base 121 rotates, the inclined surface of guide 122 moves, lifting the substrate W, and the outer edge of the substrate W is held by pin 123, which is now in the closed position (see Figure 4(B)).

[0028] <Storage Area> The housing section 13 houses the opening and closing mechanism of the holding member 12. The housing section 13 is a cylindrical member. The housing section 13 is housed in the lower part of the rotary table 11 and houses the opening and closing mechanism of the holding member 12.

[0029] <Drive Unit> The drive unit 14 is a drive source (motor) that rotates the rotary table 11. By rotating the rotary table 11, the drive unit 14 rotates the substrate W held by the pins 123.

[0030] (Processing liquid supply unit) As shown in Figure 1, the processing liquid supply unit 20 supplies processing liquid Lp to the side of the rotating substrate W opposite to the opposing surface 11a. In other words, the processing liquid supply unit 20 processes the substrate W by supplying processing liquid Lp to the upper surface (surface to be processed) of the substrate W, which is held by the holding member 12 and rotated by the rotary table 11. The processing liquid supply unit 20 includes a processing liquid nozzle 21, a processing liquid supply pipe 22, a heater 23, and a valve 24.

[0031] The processing liquid nozzle 21 is inserted through the support portion 52 and the transparent window 53 of the heating portion 50, which will be described later, and the discharge port 21a at the tip is positioned to face the vicinity of the center of the substrate W held by the rotating holding portion 10.

[0032] The processing liquid nozzle 21 is connected to a processing liquid supply source 25, such as a tank in which the processing liquid Lp is stored, via a processing liquid supply pipe 22. In this embodiment, the processing liquid Lp supplied from the processing liquid supply source 25 is preheated. A heater 23 is provided in the middle of the processing liquid supply pipe 22. The processing liquid Lp supplied from the processing liquid supply source 25 passes through the processing liquid supply pipe 22, is heated by the heater 23, and is then discharged from the discharge port 21a of the processing liquid nozzle 21 to the vicinity of the center of the substrate W.

[0033] The temperature of the processing liquid Lp discharged from the processing liquid nozzle 21 is, for example, 160°C. Furthermore, a valve 24 is provided in the middle of the processing liquid supply pipe 22. By opening and closing the valve 24, the discharge of the processing liquid Lp from the processing liquid nozzle 21 is started and stopped. The valve 24 is electrically connected to a control device 70, which will be described later, and its opening and closing is controlled by the control device 70.

[0034] (Rinsing liquid supply unit) As shown in Figure 2, the rinse liquid supply unit 30 supplies rinse liquid Lc to the side of the rotating substrate W opposite to the opposing surface 11a. In other words, the rinse liquid supply unit 30 cleans the substrate W by supplying rinse liquid Lc to the upper surface of the substrate W, which is held by the holding member 12 and rotated by the rotary table 11. For example, pure water can be used as the rinse liquid Lc.

[0035] The rinse liquid supply unit 30 includes a rinse liquid nozzle 31, a rinse liquid supply pipe 32, and a valve 33. The rinse liquid nozzle 31 is inserted through the support portion 52 and the transparent window 53 of the heating unit 50, which will be described later, and the discharge port 31a at its tip is positioned to face the vicinity of the center of the substrate W held by the rotating holding unit 10.

[0036] The rinse liquid nozzle 31 is connected to a rinse liquid supply source 34, such as a tank, where the rinse liquid Lc is stored, via a rinse liquid supply pipe 32. The rinse liquid Lc supplied from the rinse liquid supply source 34 passes through the rinse liquid supply pipe 32 and is discharged from the discharge port 31a of the rinse liquid nozzle 31 to the vicinity of the center of the substrate W. A valve 33 is provided in the middle of the rinse liquid supply pipe 32. By opening and closing the valve 33, the discharge of the rinse liquid Lc from the rinse liquid nozzle 31 is started and stopped. The valve 33 is electrically connected to a control device 70, which will be described later, and its opening and closing are controlled by the control device 70.

[0037] (Liquid receiving section) As shown in Figure 1, the recovery unit 40 is provided so as to surround the rotating holding unit 10 and receives the processing liquid Lp and rinsing liquid Lc scattered from the rotating substrate W. The recovery unit 40 discharges the received processing liquid Lp and rinsing liquid Lc to the outside of the substrate processing apparatus 1.

[0038] The collection unit 40 includes a first cup 41, a second cup 42, a lifting mechanism 43, a first liquid receiving section 44, and a second liquid receiving section 45. The first cup 41 and the second cup 42 cover the outer circumference of the rotating substrate W, spaced apart from the substrate W and the rotary table 11. The first cup 41 and the second cup 42 are cylindrical bodies bent so that their diameters narrow at the top. The first cup 41 has a smaller diameter than the second cup 42 and is positioned inside the second cup 42.

[0039] The first cup 41 has a skirt portion 41a on its side facing the second cup 42. The skirt portion 41a is a cylindrical body bent so that its upper diameter narrows, and its upper end is fixed to the side of the first cup 41. This skirt portion 41a forms an annular space below the first cup 41 that is closed at the top and open at the bottom.

[0040] The first cup 41 is provided to be movable between a standby position SB1 and a cover position CB1. The standby position SB1 is the lowered position that allows the substrate W to be loaded and unloaded (see Figure 3). This standby position SB1 is at or below the height of the opposing surface 11a of the rotary table 11. The cover position CB1 is the raised position that allows the first cup 41 to receive the processing liquid Lp splashed from the substrate W (see Figure 1). When the substrate W is being processed with the processing liquid Lp, light is irradiated from the heating unit 50, so when the heating unit 50 is irradiating light, the first cup 41 is in the cover position CB1. In the cover position CB1, the height of the upper end of the inner wall of the first cup 41 is at or above the height of the position from which the heating unit 50 emits light. In other words, the height of the upper end of the inner wall of the first cup 41 is at or above the height of the bottom surface of the transparent window 53 of the heating unit 50.

[0041] The second cup 42 is provided to be movable between a standby position SB2 and a cover position CB2. The standby position SB2 is the lowered position that allows the substrate W to be loaded and unloaded (see Figure 3). The cover position CB2 is the raised position that allows the second cup 42 to receive the rinse liquid Lc splashed from the substrate W (see Figure 2) or the raised position when the first cup 41 is in the cover position CB1 (see Figure 1).

[0042] The lifting mechanism 43 is a mechanism that individually raises and lowers the first cup 41 and the second cup 42. Various mechanisms can be applied as the lifting mechanism 43, such as a cylinder or a ball screw mechanism, which move the first cup 41 and the second cup 42 in a direction parallel to the axis of the rotary table 11, but details are omitted. Note that the lifting mechanism 43 may be configured separately for the first cup 41 and the second cup 42.

[0043] The first cup 41 moves to cover position CB1 when processing with processing liquid Lp, and moves to standby position SB1 when rinsing with rinsing liquid Lc or when loading / unloading the substrate W. The second cup 42 moves to cover position CB2 when rinsing with rinsing liquid Lc or processing with processing liquid Lp, and moves to standby position SB2 when loading / unloading the substrate W.

[0044] The first liquid receiving section 44 is an annular container located below the first cup 41 and has an open top. The second liquid receiving section 45 is an annular container located below the second cup 42 and has an open top. The first liquid receiving section 44 and the second liquid receiving section 45 are constructed by dividing the inside of the annular container into an inner and outer section by a cylindrical partition wall 46. The first liquid receiving section 44 receives the processing liquid Lp that falls downward from the first cup 41. The second liquid receiving section 45 receives the rinsing liquid Lc that falls downward from the second cup 42.

[0045] Since the partition wall 46 is interposed non-contact between the side wall of the first cup 41 and the inner wall of the skirt portion 41a, a labyrinth structure with a curved path is formed, making it difficult for the processing liquid Lp to enter the second liquid receiving portion 45. Drain ports 44a and 45a are formed at the bottom of the first liquid receiving portion 44 and the second liquid receiving portion 45, respectively. Drain port 44a is connected to the recovery path of the processing liquid Lp via a drain pipe (not shown) for discharging the processing liquid Lp. Drain port 45a is connected to the recovery path of the rinse liquid Lc via a drain pipe (not shown) for discharging the rinse liquid Lc.

[0046] (heating part) As shown in Figure 1, the heating unit 50 irradiates heating light from above the surface of the substrate W to which the processing liquid Lp is supplied. In other words, the heating unit 50 heats the substrate W, which is held and rotated by the rotating holding unit 10, by irradiating it with light from the light source.

[0047] The processing liquid Lp supplied to the vicinity of the center of the substrate W flows outwards towards the outer edge of the substrate W due to centrifugal force. In this case, without further heating, the supplied high-temperature (160°C) processing liquid Lp will decrease in temperature as it flows over the substrate W due to heat conduction and heat dissipation. Therefore, by heating the substrate W, the processing liquid Lp on the substrate W can be heated by heat conduction from the substrate W, and the processing liquid Lp on the substrate W can be maintained at a high temperature. In addition to maintaining the temperature of the processing liquid Lp, the output of the heating unit 50 may be controlled to further increase the temperature on the substrate W.

[0048] A light-emitting element 51 is used as the light source. The light-emitting element 51 emits light (electromagnetic waves) of a wavelength that heats the substrate W when absorbed by the substrate W. The light emitted by the light-emitting element 51 is light of a wavelength that penetrates the processing liquid Lp. Here, "absorbed by the substrate W" means that the light incident on the substrate W is absorbed to the extent that it can sufficiently heat the substrate W, and this includes not only complete absorption by the substrate W, but also partial reflection or transmission of the light by the substrate W. "Transmitted through the processing liquid Lp" means that the light incident on the processing liquid Lp penetrates the processing liquid Lp to the extent that it can sufficiently heat the substrate W, and this also includes partial absorption or reflection of the light by the processing liquid Lp.

[0049] As the light-emitting element 51, for example, an LED that emits heating light is used. The wavelength of the light emitted by this LED is, for example, 350 to 1060 nm (350 nm or more, and 1060 nm or less). More preferably, the central wavelength is 395 to 940 nm (395 nm or more, and 940 nm or less). In this embodiment, an LED with a central wavelength of 395 nm is used. The output of the light-emitting element 51 is controlled by a control device 70, which will be described later.

[0050] As a result, even if light from the light-emitting element 51 is irradiated from above the space in which the substrate W is held, that is, from above the processing solution Lp supplied to the substrate W, the light will pass through the processing solution Lp on the substrate W, be absorbed by the substrate W, and heat the substrate W. Then, the temperature of the processing solution Lp rises due to heat conduction from the substrate W, and the etching rate (processing rate) increases.

[0051] As described above, in this embodiment, the entire opposing surface 11a and side surface 11b of the rotary table 11, and the entire holding member 12, have a light absorption rate of 90% or more from the heating section 50. Therefore, reflection of light from the heating section 50 by structures not blocked by the substrate W is suppressed. As a result, heating of the substrate W due to reflected light is reduced.

[0052] The heating unit 50 has, in addition to the light-emitting elements 51, a support unit 52 and a transmissive window 53. The support unit 52 is a member that supports multiple light-emitting elements 51. The support unit 52 is a cylindrical member whose upper end is closed by a top plate 52a. The diameter of the support unit 52 is the same as or larger than the diameter of the substrate W. The support unit 52 is positioned above the rotary table 11, facing the opposing surface 11a with a gap between them. As a result, the heating unit 50 is configured to irradiate light from the light-emitting elements 51 from above the space in which the substrate W is held by the rotating holding unit 10.

[0053] The transmissive window 53 is a disc-shaped member that covers the end of the support portion 52 facing the rotary table 11. The transmissive window 53 is made of a material that is resistant to the processing liquid Lp and through which light emitted from the light-emitting element 51 can pass. For example, a transmissive window 53 made of quartz glass may be used.

[0054] The transmissive window 53 is larger than or equal to the substrate W. In other words, the transmissive window 53 has the same diameter as the substrate W or a larger diameter than the substrate W. Furthermore, in this embodiment, the transmissive window 53 has a smaller diameter than the opposing surface 11a of the rotary table 11, thereby suppressing the irradiation of light to structures outside the substrate W. Light from the light-emitting element 51 is irradiated onto the substrate W through the transmissive window 53. As described above, when light is irradiated by the heating unit 50, the height of the upper end of the inner wall of the first cup 41 is higher than the position from which the heating unit 50 emits light. In other words, the height of the upper end of the inner wall of the first cup 41 in cover position CB1 is above the height of the bottom surface of the transmissive window 53.

[0055] As shown in Figure 1, two through holes are provided near the center of the top plate 52a of the support section 52, and through holes are provided in the transparent window 53 at positions opposite to the through holes in the top plate 52a. A processing liquid nozzle 21 and a rinsing liquid nozzle 31 are inserted through each of the two pairs of opposing through holes in the top plate 52a and the transparent window 53, and the discharge ports 21a and 31a of their respective tips are exposed from the transparent window 53 and directed toward the substrate W.

[0056] Multiple light-emitting elements 51 are mounted on the support section 52 so as to face the rotary table 11 with a translucent window 53 in between. The heating section 50 has multiple regions where the light-emitting elements 51 are arranged. In other words, the multiple light-emitting elements 51 are arranged in multiple regions. In this embodiment, the light-emitting elements 51 are provided in regions corresponding to different radial positions on the substrate W, and the output of the light-emitting elements 51 can be controlled for each region. Furthermore, the multiple light-emitting elements 51 are arranged so that light can be irradiated onto the entire surface of the substrate W to be processed.

[0057] (Lifting mechanism) As shown in Figure 1, the lifting mechanism 60 supports and raises the heating section 50. The lifting mechanism 60 has an arm 61 and a support column 62. The arm 61 is a member that extends in a direction parallel to the substrate W, and the outer circumference of the support section 52 is connected to one end of it. The support column 62 is erected in a direction perpendicular to the substrate W and supports the other end of the arm 61. The support column 62 is provided to be movable up and down by a drive source such as a ball screw mechanism or a cylinder (not shown).

[0058] The heating unit 50 is positioned at one of the following heights: the loading / unloading position P1, the heating position P2, or the rinsing position P3, by the drive of the lifting mechanism 60. The respective positions are as follows: Loading / unloading position P1: A height position (see Figure 3) that is separated above the rotary table 11 so that the hand H of the transport robot can be inserted. Heating position P2: A height position closer to the substrate W than the loading / unloading position P1 (see Figure 1). However, it does not come into contact with the processing liquid Lp on the substrate W. Rinse position P3: Height position between the loading / unloading position P1 and the heating position P2 (see Figure 2).

[0059] (Control device) The control device 70 controls various parts of the substrate processing apparatus 1. The control device 70 has a processor that executes programs to realize various functions of the substrate processing apparatus 1, a memory that stores various information such as programs and operating conditions, and drive circuits that drive each element. In other words, the control device 70 controls the rotation holding unit 10, the processing liquid supply unit 20, the rinsing liquid supply unit 30, the recovery unit 40, the heating unit 50, the lifting mechanism 60, and so on.

[0060] More specifically, the control device 70 controls the operation of the opening and closing mechanism of the rotation holding unit 10, the drive unit 14, the heater 23 and valve 24 of the processing liquid supply unit 20, the valve 33 of the rinsing liquid supply unit 30, the lifting mechanism 43 and lifting mechanism 60 of the recovery unit 40, and so on.

[0061] [Operation] The operation of the substrate processing apparatus 1 of this embodiment, as described above, will be explained with reference to the flowchart in Figure 5, in addition to Figures 1 to 4 above. Note that a substrate processing method that processes the substrate W according to the following procedure is also one aspect of this embodiment.

[0062] As shown in Figure 3, the heating unit 50 is pre-positioned at the loading / unloading position P1, the first cup 41 is positioned at the standby position SB1, and the second cup 42 is positioned at the standby position SB2. The valve 24 of the processing liquid supply unit 20 and the valve 33 of the rinsing liquid supply unit 30 are closed.

[0063] In this state, the pin 123 is in the open position, and the substrate W held by the hand H of the transport robot is moved between the heating unit 50 and the rotary table 11. Then, the pin 123 closes, and the outer edge of the substrate W is supported by the pin 123 (see Figure 4(B)). As a result, the substrate W is held on the opposing surface 11a of the rotary table 11, with a gap between it and the opposing surface 11a (step S01). At this time, the substrate W is positioned so that its center coincides with the rotation axis of the rotary table 11. Subsequently, as shown in Figure 2, the second cup 42 rises and is positioned in the cover position CB2 (step S02).

[0064] Next, as the rotary table 11 rotates, the substrate W held by the pins 123 begins to rotate, and the heating unit 50 descends and is positioned at the rinsing position P3 (step S03).

[0065] Then, the valve 33 of the rinse liquid supply unit 30 opens, and rinse liquid Lc is discharged from the rinse liquid nozzle 31 to the vicinity of the center of the substrate W (step S04). As the rinse liquid Lc is supplied to the rotating substrate W, it moves sequentially toward the outer circumference of the substrate W and spreads across the entire surface of the substrate W being processed. The rinse liquid Lc that splashes outward from the substrate W hits the inner wall of the second cup 42 and falls downward, flowing into the second liquid receiving unit 45. It is then discharged from the drain port 45a formed in the second liquid receiving unit 45.

[0066] Without the supply of rinsing liquid Lc, when the processing liquid Lp is supplied, surface tension prevents the processing liquid Lp from spreading evenly across the entire surface of the substrate W to be processed, resulting in uneven processing. In this embodiment, to prevent such uneven processing, rinsing liquid Lc is supplied in this step before supplying the processing liquid Lp. When the preset rinsing time has elapsed (YES in step S05), the valve 33 of the rinsing liquid supply unit 30 is closed, and the discharge of rinsing liquid Lc from the rinsing liquid nozzle 31 stops (step S06).

[0067] Next, as shown in Figure 1, the first cup 41 rises and is positioned at the cover position CB1 (step S07), the heating unit 50 begins to descend and stops when it reaches the heating position P2 (step S08). Then, the valve 24 of the processing liquid supply unit 20 is opened, and the processing liquid Lp is discharged from the processing liquid nozzle 21 to the vicinity of the center of the substrate W, and heating of the substrate W by irradiation with light from the light-emitting element 51 begins (step S09).

[0068] When the processing liquid Lp is supplied to the rotating substrate W, the processing liquid Lp moves sequentially toward the outer circumference of the substrate W and spreads across the entire surface of the substrate W to be processed, thereby allowing the processing by the processing liquid Lp to proceed. The processing liquid Lp that splashes outward from the substrate W hits the inner wall of the first cup 41 and falls downward, flowing into the first liquid receiving section 44. It is then discharged from the drain port 44a formed in the first liquid receiving section 44.

[0069] Since the rinsing liquid Lc is supplied to the surface of the substrate W beforehand, the processing liquid Lp spreads evenly across the entire surface of the substrate W, preventing uneven processing. Also, since the substrate W is heated by light from the heating unit 50, the temperature drop of the processing liquid Lp on the substrate W is suppressed. However, since reflected light from the opposing surface 11a and side surface 11b of the rotary table 11 and the holding member 12 is suppressed, heating of the substrate W due to reflected light is suppressed. This processing with the processing liquid Lp is continued until a preset processing time has elapsed (NO in step S10).

[0070] When the preset processing time has elapsed (YES in step S10), the valve 24 of the processing liquid supply unit 20 is closed to stop the supply of processing liquid Lp from the processing liquid nozzle 21 and to stop the irradiation of light from the light-emitting element 51 (step S11).

[0071] As shown in Figure 2, the first cup 41 is positioned at the standby position SB1 (step S12), the heating unit 50 starts to rise, reaches the rinsing position P3 and stops (step S13). Then, the valve 33 of the rinsing liquid supply unit 30 is opened, and rinsing liquid Lc is discharged from the rinsing liquid nozzle 31 to the vicinity of the center of the substrate W (step S14). As the rinsing liquid Lc is supplied to the rotating substrate W, it moves sequentially toward the outer circumference of the substrate W and spreads over the entire surface of the substrate W to be processed.

[0072] When rinsing solution Lc is supplied to the processing solution Lp, which is a phosphoric acid solution, a large amount of water vapor is generated. At this time, since the heating unit 50 is located at the rinsing position P3, which is further away from the substrate W than the heating position P2, the adhesion of water vapor to the heating unit 50 can be suppressed. Also, since the rinsing position P3 is closer to the substrate W than the loading / unloading position P1, liquid splashing can be suppressed, and the adhesion of liquid droplets to the heating unit 50 can be suppressed.

[0073] When the preset rinsing time has elapsed (YES in step S15), the valve 33 of the rinsing fluid supply unit 30 is closed, and the discharge of rinsing fluid Lc from the rinsing fluid nozzle 31 stops (step S16). As the rotary table 11 stops, the substrate W held by the pin 123 stops rotating (step S17). Subsequently, the second cup 42 descends and is positioned in the standby position SB2 (step S18).

[0074] As shown in Figure 3, the heating unit 50 rises and is positioned at the loading / unloading position P1 (step S19). In this state, the hand H of the transport robot is inserted below the substrate W, and the pin 123 opens, allowing the substrate W to be placed on the hand H of the transport robot and unloaded (step S20). At this time, the rinsing liquid Lc is held on the substrate W.

[0075] [effect] (1) The substrate processing apparatus 1 of this embodiment has a rotating table 11 that rotates the substrate W held by the holding member 12, which is separated from the substrate W and has a larger diameter than the substrate W, a processing liquid supply unit 20 that supplies processing liquid Lp to the side of the rotating substrate W opposite to the opposing surface 11a, and a heating unit 50 that irradiates heating light from above the surface of the substrate W to which the processing liquid Lp is supplied, and the opposing surface 11a has a light absorption rate of 90% or more in a region that does not overlap with the substrate W in a plan view.

[0076] If light emitted from the heating unit 50 is reflected by the rotating table 11, reflected light is generated. As the resulting reflected light is blocked by the holding member 12, the amount of light incident on the area near the holding member 12 decreases, while reflected light is incident on other areas, resulting in an uneven amount of light incident on the substrate W in the circumferential direction.

[0077] In this embodiment, even if the light emitted from the heating unit 50 is incident on a region of the rotary table 11 that does not overlap with the substrate W, it is absorbed by the rotary table 11. Therefore, it is possible to suppress the reflection of light by the rotary table 11 and the resulting incident of reflected light on the back surface of the substrate W. Consequently, the difference in the amount of incident light in the circumferential direction of the outer peripheral region within the plane of the substrate W is reduced, improving temperature uniformity, and thus improving the uniformity of the processing rate in the circumferential direction.

[0078] In this embodiment, the entire opposing surface 11a of the rotary table 11 has a light absorption rate of 90% or more. Therefore, reflection can be reliably suppressed, and since the entire surface can be formed from a common material, the manufacturing process of the rotary table 11 becomes easier.

[0079] (2) The holding member 12 has a light absorption rate of 90% or more. Therefore, the reflection of light by the holding member 12 can be suppressed, and the local difference in light intensity caused by light reflected by the holding member 12 being incident on the substrate W can be reduced. Consequently, the difference in the amount of incident light in the circumferential direction of the outer peripheral region within the plane of the substrate W is reduced, and the uniformity of temperature is improved, thereby increasing the uniformity of the processing rate in the circumferential direction. In particular, in this embodiment, the holding member 12 is equipped with a base 121 having a top surface facing the substrate W. Since this base 121 also has a light absorption rate of 90% or more, it can more reliably suppress light incident on the back surface of the substrate W.

[0080] (3) The heating unit 50 has a transparent window 53 that is larger than or equal to the substrate W, and irradiates the substrate W with light through the transparent window 53. This allows the entire surface of the substrate W to be irradiated with light and heated while suppressing the reflection of light from areas of the rotary table 11 that do not overlap with the substrate W.

[0081] (4) The parts with a light absorption rate of 90% or more are black. In this way, by forming it with a black material, it is easy to make the light absorption rate 90% or more.

[0082] (5) The black parts are conductive PTFE. This allows for a light absorption rate of 90% or more while maintaining resistance to the treatment solution Lp. Figure 9 shows a table of the optical properties of general PTFE (white) and conductive PTFE (black). The values ​​shown in Figure 9 are the absorption rate, reflectance, and transmittance of each sample at a wavelength of 395 nm. A UV-VIS-NIR spectrophotometer (PerkinElmer Lambda950) was used to measure the reflectance and transmittance. The absorption rate was calculated as (100 - (reflectance + transmittance)). As shown in Figure 9, conductive PTFE has a higher absorption rate and lower reflectance compared to PTFE. Therefore, by using conductive PTFE as in this embodiment, reflection can be sufficiently suppressed.

[0083] Figures 10 and 11 show graphs illustrating an example of measuring the etching amount in the outer peripheral region of the substrate W over one full rotation (360°). Figure 10 shows the case where the rotary table 11 is made of white PTFE, and Figure 11 shows the case where the rotary table 11 is made of black conductive PTFE. In Figures 10 and 11, the horizontal axis represents the circumferential position (rotation angle), and the vertical axis represents the etching amount. Since the scales of the vertical and horizontal axes in Figures 10 and 11 are the same, the magnitude of the difference in etching amount can be compared. In Figures 10 and 11, a decrease in etching amount can be seen at a 60° period. The positions where the etching amount decreases correspond to the positions where the six holding members 12 are provided. As can be seen from Figures 10 and 11, the rotary table 11 made of conductive PTFE can suppress light reflection, so the difference between areas with high and low circumferential etching is smaller compared to the rotary table 11 made of PTFE.

[0084] (6) The heating unit 50 has multiple LEDs as light-emitting elements 51. As a result, the entire substrate W can be heated uniformly by the multiple LEDs, but light is more likely to be irradiated to areas that do not overlap the substrate W. However, since the light absorption rate of these areas is set to 90% or more, reflection can be suppressed.

[0085] [Second Embodiment] [composition] A second embodiment will be described with reference to Figure 6. This embodiment has basically the same configuration as the first embodiment and operates similarly, so the common aspects will not be explained. However, in this embodiment, at least the inner wall of the first cup 41 has an absorption rate of 90% or more of the light irradiated by the heating unit 50.

[0086] In this embodiment, the entire first cup 41 has a light absorption rate of 90% or more. The first cup 41 is made of a black material. For example, the light absorption rate of the first cup 41 is made 90% or more by making it black with a carbon-containing material. More specifically, conductive PTFE containing carbon is used for the first cup 41. Alternatively, a black material component may be assembled to the inner wall of the first cup 41, or a black material may be applied. Note that the opposing surface 11a in this embodiment does not necessarily have to be configured to reduce light reflection.

[0087] [Operation] The operation of this embodiment is the same as that of the first embodiment described in accordance with steps S01 to S20 above. However, in step S09, when the processing liquid Lp is discharged from the processing liquid nozzle 21 to the vicinity of the center of the substrate W and heating of the substrate W by irradiation with light from the light-emitting element 51 begins, the reflected light from the first cup 41 at the cover position CB1 is suppressed, and thus heating of the substrate W by reflected light is suppressed.

[0088] [effect] The substrate processing apparatus 1 of this embodiment includes a rotating holding unit 10 that rotates a substrate W held by a holding member 12, a processing liquid supply unit 20 that supplies processing liquid Lp to the upper surface of the rotating substrate W, a heating unit 50 that irradiates heating light from above the upper surface of the substrate W, and a cup (first cup 41) that covers the outer circumference of the rotating substrate W at a distance from the substrate W, wherein at least the inner wall of the first cup 41 has a light absorption rate of 90% or more.

[0089] If light emitted from the heating section 50 is reflected by the first cup 41, reflected light is generated. This reflected light is blocked by the holding member 12, which reduces the amount of light incident on the area near the holding member 12, resulting in uneven light intensity in the circumferential direction of the substrate W.

[0090] In this embodiment, when heating while supplying the processing liquid Lp, the inner wall of the first cup 41 surrounding the substrate W is formed of a material with high light absorption, so that light reflected by the first cup 41 can be suppressed. Therefore, the amount of light reflected by the first cup 41 before incident on the substrate W is reduced, the difference in the amount of incident light in the circumferential direction of the outer peripheral region within the plane of the substrate W is reduced, and the uniformity of the temperature is improved, thus increasing the uniformity of the processing rate in the circumferential direction.

[0091] Furthermore, similar to the first embodiment described above, when light is irradiated by the heating unit 50, the height of the upper end of the inner wall of the first cup 41 is higher than the position from which the heating unit 50 emits light, so the processing liquid Lp can be efficiently recovered.

[0092] [Third Embodiment] [composition] A third embodiment will be described with reference to Figure 7. This embodiment is basically the same as the first and second embodiments in configuration and operation. That is, as with the first embodiment, the light absorption rate of the opposing surface 11a and side surface 11b of the rotary table 11 and the holding member 12 is 90% or more. In addition, as with the second embodiment, the light absorption rate of the first cup 41 is 90% or more. Other matters common to the first and second embodiments will not be described.

[0093] [Operation] The operation of this embodiment is the same as that of the first embodiment described in accordance with steps S01 to S20 above. However, in step S09, when the processing liquid Lp is discharged from the processing liquid nozzle 21 to the vicinity of the center of the substrate W and heating of the substrate W by irradiation with light from the light-emitting element 51 begins, reflected light from the opposing surface 11a of the rotary table 11, the holding member 12, and the first cup 41 is suppressed, so the irradiation of reflected light onto the substrate W is reduced.

[0094] [effect] In this embodiment, the substrate processing apparatus 1 has a light absorption rate of 90% or more on the opposing surface 11a of the rotary table 11, at least in the area that does not overlap with the substrate W in a plan view, and at least the inner wall of the first cup 41 has a light absorption rate of 90% or more. In addition, the holding member 12 has a light absorption rate of 90% or more.

[0095] In this embodiment, when heating while supplying the processing liquid Lp, the reflection of light from the opposing surface 11a, the holding member 12, and the first cup 41 is suppressed. Therefore, the amount of light that is reflected and incident on the substrate W is further reduced, which improves the uniformity of the temperature in the circumferential direction and enhances the uniformity of the processing rate in the circumferential direction.

[0096] [Differentiation] (1) In the first and third embodiments, the opposing surface 11a does not need to have a light absorption rate of 90% or more throughout its entirety. It is sufficient that at least the region that does not overlap with the substrate W in a plan view has a light absorption rate of 90% or more.

[0097] For example, as shown in Figure 8(A), a ring-shaped region that does not overlap the substrate W in a plan view (the region indicated by cross hatching) may have a light absorption rate of 90% or more. For example, such an opposing surface 11a can be constructed by fitting a ring-shaped black component or by applying a black material. Since the ring-shaped region is heated by absorbing light, the effect of heating the outer peripheral region of the substrate W is obtained.

[0098] Furthermore, the ring-shaped region may extend to the area that overlaps with the substrate W in a plan view, as shown in Figure 8(B). By making it overlap with the substrate W in a plan view, reflected light can be suppressed more reliably.

[0099] (2) The light source of the heating unit 50 is not limited to LEDs. Any light source that can heat the object to be heated is acceptable. For example, a halogen lamp or a flash lamp may be used. However, arranging multiple LEDs allows for more uniform heating.

[0100] (3) The area in which light reflection can be reduced is not limited to being black. It is sufficient if the light absorption rate from the heating section 50 is 90% or more.

[0101] (4) In order to make the rotating table 11, the holding member 12, and the first cup 41 have a light absorption rate of 90% or more, in addition to forming them from a material with a light absorption rate of 90% or more, coating or attaching other members may be performed as described above. In other words, it is also possible to coat a material with the absorption rate, assemble a member with the absorption rate, or attach a sheet with the absorption rate. In the case of the rotating table 11, a plate formed from the material with the absorption rate may be placed on the rotating table 11. In this case, the upper surface of the plate also becomes the opposing surface 11a. In the case of the holding member 12, it is sufficient that the portion exposed from the opposing surface 11a of the rotating table 11 has the absorption rate.

[0102] (5) The holding member 12 only needs to be able to hold the outer edge of the substrate W, and is not limited to being held by an eccentrically rotating pin 123. For example, it may be a hook-shaped member that rotates in a direction toward and toward the outer edge of the substrate W about a horizontal axis. Depending on the form of the holding member 12, the opposing surface 11a may be smaller than the substrate W, or there may be no rotating table 11 or anything that can be called an opposing surface 11a. In that case, it is sufficient that both or one of the holding member 12 and the first cup 41 have a region with a light absorption rate of 90% or more, as described above.

[0103] (6) The processing performed by the substrate processing apparatus 1 is not limited to etching. Any apparatus that processes the substrate W by supplying a processing solution Lp while heating the substrate W is acceptable. For example, it may be a resist removal process that removes a resist film formed on the substrate W.

[0104] (7) The treatment solution Lp is not limited to phosphoric acid solution. Any treatment solution Lp that requires heating is acceptable. For example, hydrofluoric acid can be used. In the case of resist removal treatment, SPM (hydrogen peroxide sulfate aqueous solution) can also be used as the treatment solution Lp.

[0105] (8) The substrate W to be processed may be a Si substrate with a resist formed on its surface. Furthermore, the substrate W is not limited to a Si substrate. For example, it may be a SiC substrate (silicon carbide wafer).

[0106] (9) The number and placement of the light-emitting elements 51 are not limited to the embodiments exemplified above. The light from the light source may be guided onto the substrate W via an optical fiber and emitted. For this reason, the light-emitting elements 51 do not need to be placed above the substrate W.

[0107] (10) In the above embodiment, the rinse liquid nozzle 31 is configured to penetrate the support portion 52 and the transparent window 53. However, a mechanism for moving the rinse liquid nozzle 31 in the horizontal direction may be provided so that when supplying the rinse liquid Lc, the rinse liquid nozzle 31 is moved to an upper position near the center of the substrate W.

[0108] (11) The support portion 52 on which the light-emitting element 51 is placed is a circular member with a diameter equal to or greater than the diameter of the substrate W, but is not limited to this. It is sufficient that the entire surface of the substrate W can be illuminated as the substrate W rotates. For example, it may be a rectangular member large enough to cover the radius of the substrate W. If the area corresponding to the radius of the substrate W can be illuminated, the entire surface of the substrate W can be illuminated as the substrate W rotates. Alternatively, the support portion 52 may be provided so as to be able to swing horizontally, and the entire surface of the substrate W can be illuminated by swinging while emitting light from the light-emitting element 51.

[0109] Thus, if the support portion 52 is smaller than the diameter of the substrate W, a mechanism for moving the processing liquid nozzle 21 horizontally may be provided so that it is moved upwards on the substrate W when supplying the processing liquid. In other words, the placement of the processing liquid nozzle 21 is not limited as long as it can supply the processing liquid Lp toward the center of the substrate W while irradiating it with light from the light-emitting element 51.

[0110] [Other embodiments] Although embodiments and modifications of the present invention have been described above, these embodiments and modifications are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, combinations, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the invention described in the claims. [Explanation of symbols]

[0111] 1. Substrate processing apparatus 10 Rotating holding part 11 Rotating Table 11a Opposite side 11b Side 12 Retaining member 13. Detention Unit 14 Drive Unit 20 Processing liquid supply unit 21 Processing liquid nozzle 21a Discharge port 22 Processing liquid supply pipe 23 Heater 24 valves 25 Processing liquid supply source 30 Rinse liquid supply unit 31 Rinse solution nozzle 31a Discharge port 32 Rinse liquid supply pipe 33 valves 34. Rinse solution supply source 40. Recovery Section 41 The First Cup 41a Skirt section 42 The Second Cup 43 Lifting mechanism 44 First liquid receiving section 44a Drain port 45 Second liquid receiving section 45a Drain port 46 Partition Wall 50 Heating section 51 Light-emitting element 52 Support part 52a Top plate 53 Transparent window 60 Lifting mechanism 61 Arm 62 Pillar 70 Control device 121 Bass 122 Guide 123 pins

Claims

1. A rotating table that rotates the substrate held by the holding member, with a gap between it and the substrate, and having an opposing surface with a larger diameter than the substrate, the substrate being held by the holding member, A processing liquid supply unit supplies processing liquid to the surface of the rotating substrate opposite to the opposing surface, A heating unit that irradiates heating light from above the surface to which the processing liquid of the substrate is supplied, It has, The substrate processing apparatus is characterized in that the opposing surface has a light absorption rate of 90% or more in a region that does not overlap with the substrate in a plan view.

2. The substrate processing apparatus according to claim 1, characterized in that the holding member has a light absorption rate of 90% or more.

3. The rotating substrate has a cup that covers its outer circumference at a distance from the substrate and the rotating table, The substrate processing apparatus according to claim 1, characterized in that at least the inner wall of the cup has a light absorption rate of 90% or more.

4. The substrate processing apparatus according to claim 3, characterized in that the holding member has a light absorption rate of 90% or more.

5. A rotating holding unit that rotates the substrate held by the holding member, A processing liquid supply unit that supplies processing liquid to the upper surface of the rotating substrate, A heating unit that irradiates heating light from above the upper surface of the substrate, A cup that covers the outer circumference of the rotating substrate at a distance from the substrate, It has, A substrate processing apparatus characterized in that at least the inner wall of the cup has a light absorption rate of 90% or more.

6. The substrate processing apparatus according to claim 5, characterized in that the holding member has a light absorption rate of 90% or more.

7. The substrate processing apparatus according to any one of claims 1 to 6, characterized in that the portion having a light absorption rate of 90% or more is made of a black material.

8. The substrate processing apparatus according to claim 7, characterized in that the black portion is made of conductive PTFE.

9. The substrate processing apparatus according to claim 3 or 5, characterized in that when light is irradiated by the heating unit, the height of the upper end of the inner wall of the cup is greater than or equal to the position from which the heating unit emits light.

10. The substrate processing apparatus according to any one of claims 1 to 6, characterized in that the heating unit has a transparent window larger than or equal to the size of the substrate, and irradiates the substrate with light through the transparent window.

11. The substrate processing apparatus according to any one of claims 1 to 6, characterized in that the heating unit has a plurality of LEDs as a light source.

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