High frequency power supply system and semiconductor process equipment

Abstract

This application relates to the technical field of high frequency applications and discloses a high frequency power supply system and a semiconductor processing apparatus. The high frequency power supply system includes: a high frequency power generating circuit connected to an external AC voltage source and configured to output high frequency power; a switching circuit connected to an output end of the high frequency power generating circuit, the switching circuit having a first output branch and a second output branch, and configured to output the high frequency power generated by the high frequency power generating circuit through either the first output branch or the second output branch; and an impedance matching circuit having at least two sets of impedance matching branches for providing impedance matching for the high frequency power generated by the high frequency power generating circuit, the impedance matching branches being connected to the output end of the first output branch, and the impedance values ​​of the impedance matching branches being different from each other. The embodiments of this application can reduce the time required for impedance matching between the high frequency power generating circuit and a reaction chamber, thereby further improving process efficiency.

Description

[Technical Field]

[0001] The present application relates to the technical field of high frequency applications, particularly to high frequency power supply systems and semiconductor processing equipment. [Background technology]

[0002] A high frequency power supply system is a device for generating high frequency power signals, and is a core component of semiconductor processing equipment. It is used to generate plasma and provide energy to equipment for material processing.

[0003] In the related art, a radio frequency power supply system provides radio frequency signal energy to a reaction chamber to generate plasma. To match the output impedance of a radio frequency power generating circuit with the impedance of the reaction chamber, an impedance matcher must be installed between the radio frequency power generating circuit and the reaction chamber, and the radio frequency power generating circuit must provide radio frequency signal energy to the reaction chamber through the impedance matcher. However, in conventional radio frequency power supply systems, for processes requiring a fixed impedance matching amount, the conventional matcher must be used to perform a wide range of impedance matching, which takes a long time to match the impedance and reduces process efficiency. Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present application is to provide a high frequency power supply system and a semiconductor processing apparatus to reduce the time for impedance matching between a high frequency power generating circuit and a reaction chamber, and further improve process efficiency. [Means for solving the problem]

[0005] The present embodiment is a high frequency power supply system, a high frequency power generating circuit connected to an external AC voltage source and configured to output high frequency power; a switching circuit connected to an output end of the high frequency power generating circuit, having a first output branch and a second output branch, and capable of outputting the high frequency power output by the high frequency power generating circuit via the first output branch or the second output branch; an impedance matching circuit having at least two sets of impedance matching branches for providing impedance matching for the high frequency power output to the high frequency power generating circuit, wherein each of the impedance matching branches is connected to an output end of the first output branch, and the impedance values ​​of the impedance matching branches are different from each other.

[0006] Furthermore, the impedance matching circuit a resonant sub-circuit; a multi-stage inductance having at least two sets of impedance coil segments, a first end of one of the impedance coil segments being connected to a second end of another of the impedance coil segments or to a first end of the resonant sub-circuit; and a switch device, the number of which is equal to the number of the impedance coil segments, the switch device having a first end connected to the second end of the impedance coil segment and a second end connected to the second end of the resonant sub-circuit.

[0007] Furthermore, the switch device may be a circuit selection device, a relay, a crystal transistor, and / or a MOS transistor.

[0008] Furthermore, the impedance values ​​of each of the impedance matching branches monotonically increase according to a preset sequence.

[0009] Furthermore, the high frequency power generating circuit a rectification subcircuit for receiving external AC power and rectifying it to DC power; a first filtering sub-circuit connected to an output end of the rectifying sub-circuit, for filtering the rectified DC power and obtaining filtered DC power; an inversion sub-circuit connected to the output end of the first filtering sub-circuit for inverting the filtered DC power into AC power; a voltage conversion subcircuit connected to an output terminal of the inverse conversion subcircuit for performing voltage conversion on the AC power obtained by the inverse conversion; and a second filtering subcircuit connected to the output terminal of the voltage converting subcircuit for filtering the AC power obtained by the voltage conversion and obtaining high frequency power.

[0010] Furthermore, an input end of the first output branch is connected to an output end of the high frequency power generating circuit, and an output end of the first output branch is connected to an output end of the impedance matching circuit, The input end of the second output branch is connected to the output end of the high frequency power generating circuit, and the output end of the second output branch is used to connect to an external reaction chamber or an external matching box.

[0011] Furthermore, the high frequency power supply system further includes a power adjustment circuit; The power adjustment circuit is connected to the output terminal of the high frequency power generation circuit, and is used to collect the high frequency power output by the high frequency power generation circuit and output a first adjustment signal, so that the high frequency power generation circuit outputs high frequency power corresponding to the first adjustment signal.

[0012] Furthermore, the power adjustment circuit a power sensor connected to an output terminal of the high-frequency power generating circuit; an analog-to-digital converter connected to an output end of the power sensor; and a power adjustment module connected to an output end of the analog-to-digital converter for outputting a corresponding adjustment signal based on the collected high frequency power.

[0013] Furthermore, the power adjustment module is connected to the impedance matching circuit and is used to collect the matched power output by the impedance matching circuit and output a second adjustment signal, thereby conducting the impedance matching branch corresponding to the second adjustment signal.

[0014] The present application further provides a semiconductor processing device including the above-described high frequency power supply system. [Effects of the Invention]

[0015] The beneficial effects of the present invention are as follows: By receiving the high-frequency power output from the high-frequency power generating circuit via a switching circuit and using an impedance matching circuit with a multi-stage impedance matching structure, in a process environment where the impedance matching amount is constant, a switching circuit is provided to output the high-frequency power to the impedance matching circuit, and impedance matching for the high-frequency power output from the high-frequency power generating circuit is provided via the impedance matching circuit, thereby adapting to process environments where various impedance matching amounts are constant, reducing the time required for impedance matching between the high-frequency power generating circuit and the reaction chamber, and further improving process efficiency. In a process environment where the impedance matching amount varies greatly, a switching circuit can be provided to disconnect the impedance matching circuit, allowing a conventional matcher to be used to perform a wide range of impedance matching tasks or for direct output of high-frequency power. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is a structural schematic diagram of a high frequency power supply system according to a first embodiment of the present invention; [Figure 2] 1 is a structural schematic diagram of an impedance matching circuit according to an embodiment of the present application; [Figure 3] 1 is a structural schematic diagram of a high-frequency power generating circuit according to a first embodiment of the present invention; [Figure 4]FIG. 4 is a structural schematic diagram of a high-frequency power generating circuit according to a second embodiment of the present invention. [Figure 5] FIG. 10 is a structural schematic diagram of a high frequency power supply system according to a second embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0017] In order to more clearly understand the objectives, technical solutions and advantages of the present application, the present application will be described in more detail below in conjunction with the drawings and examples. It should be understood that the specific examples described in this specification are only used to illustrate the present application, and are not used to limit the present application.

[0018] It should be noted that the terms "first," "second," "third," "fourth," etc. (when present) in the specification and drawings of this application are intended to distinguish between similar objects and are not intended to describe a particular order or sequence. It should be understood that such terms, as used herein, may be interchanged under appropriate circumstances so that the embodiments of the application described herein may be performed in orders other than those illustrated or described herein. Furthermore, the terms "comprise" and "have," and any variations thereof, are intended to cover exclusive inclusions; for example, a process, method, system, product, or device that includes a series of steps or circuits is not necessarily limited to those steps or circuits expressly recited, but may include other steps or circuits not expressly recited or inherent to the process, method, product, or device.

[0019] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art. The terms used herein are only for the purpose of describing the embodiments of the present application and are not intended to limit the present application.

[0020] A radio frequency power supply system is a device for generating radio frequency power signals and is a core component of semiconductor processing equipment. All equipment that generates plasma to process materials requires a radio frequency power supply system to supply energy. Integrated circuit, solar cell, and LED (light emitting diode) process manufacturing equipment, such as etching machines, PVD (physical vapor deposition), PECVD (plasma enhanced chemical vapor deposition), and ALD (atomic layer deposition), all use radio frequency power supplies with different power specifications.

[0021] A high frequency power supply system for a plasma process typically includes a high frequency power generating circuit and an impedance matching device. The high frequency power generating circuit is used to generate a high frequency signal having a certain power level and a certain frequency. The impedance matching device is disposed between the plasma reaction chamber and the high frequency power generator and is used to match the load impedance presented by the plasma reaction chamber with the output impedance of the high frequency power generating circuit, thereby effectively transporting the power generated by the high frequency power generator to the plasma chamber and thereby exciting a sufficient amount of plasma to achieve the process requirements.

[0022] However, in the related art, when a high-frequency power supply system operates in a process environment where the impedance matching amount is constant or where the impedance matching amount varies greatly, a conventional impedance matcher is used to perform a wide range of impedance matching work. In a process environment where the impedance matching amount is constant, the use of a conventional impedance matcher not only extends the impedance matching time, but is also likely to reduce the process efficiency and ultimately hinder the process.

[0023] Based on this, the present application provides a high frequency power supply system and a semiconductor processing device, which realizes multi-stage impedance matching in a multi-stage impedance matcher structure, thereby adapting to various process environments with a constant impedance matching amount, thereby reducing the time required for impedance matching between the high frequency power generating circuit and the reaction chamber.

[0024] Referring to FIG. 1, in one embodiment, a high frequency power supply system includes a high frequency power generating circuit 1, a switching circuit 2 and an impedance matching circuit 3.

[0025] The high frequency power generating circuit 1 is connected to an external AC voltage source and is used to output high frequency power. Specifically, the high frequency power generating circuit 1 is connected to an external AC voltage source to receive electricity and operate, and outputs high frequency power having a constant power level and a constant frequency to the switching circuit 2.

[0026] The switching circuit 2 is connected to the output end of the high frequency power generation circuit 1, has a first output branch and a second output branch, and can output the high frequency power output by the high frequency power generation circuit 1 via the first output branch or the second output branch. Specifically, the switching circuit 2 has two power output methods, one of which outputs the high frequency power output by the high frequency power generation circuit 1 via the first output branch, and the other of which outputs the high frequency power output by the high frequency power generation circuit 1 via the second output branch. When the switching circuit 2 outputs the high frequency power output by the high frequency power generation circuit 1 via the first output branch, the impedance matching circuit 3 receives the high frequency power output by the high frequency power generation circuit 1.

[0027] The impedance matching circuit 3 is used to provide impedance matching for the high frequency power output by the high frequency power generating circuit 1. It has at least two sets of impedance matching branches, each connected to the output end of the first output branch, and each impedance matching branch has a different impedance value. Specifically, the impedance matching branches are connected between the high frequency power generating circuit 1 and the external reaction chamber to provide impedance matching for the communication path. Each impedance matching branch has a different impedance value. The matched power output by the impedance matching circuit 3 can be switched by switching the impedance matching branches to conduction. By detecting the matched power output by the impedance matching circuit 3 when each impedance matching branch is conducted independently, the impedance matching branch that optimally matches the high frequency power generating circuit 1 and the external reaction chamber can be identified, and the impedance matching branch is maintained to provide impedance matching for the high frequency power output by the high frequency power generating circuit 1.

[0028] In actual use, the RF power generating circuit 1 outputs RF power having a constant power level and a constant frequency to the switching circuit 2. When the RF power system operates in a process environment with a constant impedance matching amount, the switching circuit 2 is provided to output the RF power output by the RF power generating circuit 1 through the first output branch, and impedance matching for the RF power output by the RF power generating circuit 1 is further provided through the impedance matching circuit 3. This realizes multi-stage impedance matching in a multi-stage impedance matching structure, thereby adapting to various process environments with a constant impedance matching amount and achieving the technical effect of quickly matching to a process environment with a constant impedance matching amount. When the RF power system operates in a process environment with a large change in impedance matching amount, the switching circuit 2 is provided to output the RF power output by the RF power generating circuit 1 through the second output branch, and the impedance matching circuit 3 is further disconnected. The output end of the second output branch may be connected to a conventional matching box, which performs a wide range of impedance matching to adapt to a process environment with a large change in impedance matching amount. In some embodiments, the output end of the second output branch may be further directly connected to an external reaction chamber.

[0029] In some embodiments, specifically, the input end of the first output branch is connected to the output end of the high frequency power generating circuit 1, the output end of the first output branch is connected to the output end of the impedance matching circuit 3, the input end of the second output branch is connected to the output end of the high frequency power generating circuit 1, and the output end of the second output branch is used to connect to an external reaction chamber or an external matching box.

[0030] 2 , in one embodiment, the impedance matching circuit 3 includes a multi-stage inductance 31, a switch device 32, and a resonant sub-circuit 33. The number of impedance coil segments is at least two sets, the number of switch devices 32 is the same as the number of impedance coil segments, a first end of an impedance coil segment is connected to a second end of another impedance coil segment or a first end of the resonant sub-circuit 33, a first end of the switch device 32 is connected to a second end of the impedance coil segment, and a second end of the switch device 32 is connected to a second end of the resonant sub-circuit 33.

[0031] Specifically, the multi-stage inductance 31 is a separated inductance structure, the input side coil of the multi-stage inductance 31 is connected to the output end of the switching circuit 2, and the output side coil of the multi-stage inductance 31 consists of at least two sets of impedance coil segments, each of which has a certain amount of impedance, and each impedance coil segment, the switch device 32, and the resonant sub-circuit 33 are connected in the above manner, so that one set of switch devices 32 and at least one set of impedance coil segments form one set of impedance matching branches. For example, the first set of impedance matching branches may consist of a first set of switch devices 32 and a first set of impedance coil segments (first ends of the first set of impedance coil segments are connected to first ends of the resonant sub-circuit 33), the second set of impedance matching branches may consist of a second set of switch devices 32, a first set of impedance coil segments and a second set of impedance coil segments (first ends of the second set of impedance coil segments are connected to second ends of the first set of impedance coil segments), and the third set of impedance matching branches may consist of a third set of switch devices 32, a first set of impedance coil segments, a second set of impedance coil segments and a third set of impedance coil segments (first ends of the third set of impedance coil segments are connected to second ends of the second set of impedance coil segments).By this analogy, since each set of impedance matching branches has a different impedance, the last set of impedance matching branches may consist of the last set of switch devices 32 and all of the impedance coil segments.In actual use, by closing one set of switch devices 32, the impedance matching branch corresponding to the switch device 32 is made conductive, and the resonant sub-circuit 33 is made conductive with the made-up impedance matching branch, and the impedance matching branch provides impedance matching to the external reaction chamber through the resonant sub-circuit 33, and by mutual conversion between the electric field energy in the capacitance and the magnetic field energy in the inductance, the sum of the electric field energy and the magnetic field energy is maintained constant, so that the high-frequency power generating circuit 1 does not need to repeatedly convert the capacitance or inductance and energy, and only needs to supply the electrical energy consumed by the external reaction chamber. For example, when only the first set of switch devices 32 are closed, the first set of impedance matching branches are conductive, i.e., the first set of impedance coil segments are conductive with the resonant sub-circuit 33, and the first set of impedance coil segments provide impedance matching to the external reaction chamber via the resonant sub-circuit 33, and when only the second set of switch devices 32 are closed, the second set of impedance matching branches are conductive, i.e., the second set of impedance coil segments and the second set of impedance coil segments are conductive with the resonant sub-circuit 33, and the second set of impedance coil segments and the second set of impedance coil segments provide impedance matching to the external reaction chamber via the resonant sub-circuit 33.

[0032] More specifically, each set of impedance coil segments constitutes the output side of the multi-stage inductance 31, and the first end of the i-th impedance coil segment is directly connected to the first end of the resonant sub-circuit 33 (when i=1) or connected to the first end of the resonant sub-circuit 33 via the i-1, i-2, ..., 1st impedance coil segments in sequence (when i>1), and connected to the external reaction chamber via the first end of the resonant sub-circuit 33, and the second end of the i-th impedance coil segment is connected to the first end of the i+1th impedance coil segment and the first end of the i-th switch device 32, respectively, and the second end of the i-th switch device 32 is connected to the external reaction chamber via the second end of the resonant sub-circuit 33, and when the i-th switch device 32 is closed, the i-th set of impedance matching branches (consisting of the i-th switch device 32 and the i, i-1, i-2, ..., 1st impedance coil segments) is conductive with the resonant sub-circuit 33.Illustratively, the first ends of the first set of impedance coil segments are connected to the external reaction chamber via the first ends of the resonant sub-circuits 33, the second ends of the first set of impedance coil segments are respectively connected to the first ends of the second set of impedance coil segments and the first ends of the first set of switch devices 32, the second ends of the first set of switch devices 32 are respectively connected to the external reaction chamber via the second ends of the resonant sub-circuits 33, the first ends of the second set of impedance coil segments are respectively connected to the first ends of the resonant sub-circuits 33 and indirectly connected to the external reaction chamber, and the second ends of the second set of impedance coil segments are respectively connected to the third end of the resonant sub-circuits 32. The first ends of the impedance coil segments of the set are connected to the first ends of the second set of switch devices 32, and the second ends of the second set of switch devices 32 are connected to the external reaction chamber via the second ends of the resonant sub-circuits 33; by analogy, the first ends of the impedance coil segments of the last set are connected to the first ends of the resonant sub-circuits 33 via all the other impedance coil segments and are indirectly connected to the external reaction chamber; the second ends of the impedance coil segments of the last set are connected to the first ends of the last set of switch devices 32, and the second ends of the last set of switch devices 32 are connected to the external reaction chamber via the second ends of the resonant sub-circuits 33. The resonant subcircuit 33 includes a first inductance L1, a first capacitance C1 and a second capacitance C2, one end of the first capacitance C1 is connected to the first end of the first set of impedance coil segments as the first end of the resonant subcircuit 33, one end of the second capacitance C2 is connected to the second end of each switch device 32 as the second end of the resonant subcircuit 33, the other end of the second capacitance C2 is connected to one end of the first inductance L1, the other end of the first inductance L1 and the other end of the first capacitance C1 are respectively connected to the external reaction chamber, the first capacitance C1 and the second capacitance C2 are used to provide electric field energy, and the first inductance L1 is used to provide magnetic field energy.

[0033] In some embodiments, switch device 32 selects a circuit selection device, a relay, a crystal transistor, and / or a MOS transistor.

[0034] In some embodiments, the impedance values ​​of the impedance matching branches increase monotonically in a predetermined order. For example, the impedance values ​​of the seven sets of impedance matching branches, the first set to the seventh set of anti-matching branches, may be 10 ohms, 20 ohms, 30 ohms, 40 ohms, 50 ohms, 60 ohms, and 70 ohms, respectively.

[0035] 3 and 4, in a more specific embodiment, the high-frequency power generating circuit 1 includes a rectifier subcircuit 11, a first filtering subcircuit 12, an inverter subcircuit 13, a voltage converter subcircuit 14, and a second filtering subcircuit 15. The rectifier subcircuit 11 is used to receive external AC power and rectify it into DC power. The first filtering subcircuit 12 is connected to the output terminal of the rectifier subcircuit 11 and is used to filter the rectified DC power and obtain filtered DC power. The inverter subcircuit 13 is connected to the output terminal of the first filtering subcircuit 12 and is used to invert the filtered DC power back into AC power. The voltage converter subcircuit 14 is connected to the output terminal of the inverter subcircuit 13 and is used to perform voltage conversion on the inverted AC power. The second filtering subcircuit 15 is connected to the output terminal of the voltage converter subcircuit 14 and is used to filter the voltage-converted AC power and obtain high-frequency power.

[0036] Specifically, the rectification subcircuit 11 receives external AC power and rectifies it into DC power. The external AC power may be single-phase input AC power (SINGLE PHASE) or three-phase input AC power (THREE PHASE). The DC power obtained after the rectification process is filtered by the first filtering subcircuit 12, which fifties the AC interference in the DC power. The DC power filtered by the first filtering subcircuit 12 is input to the inversion subcircuit 13 and inverted into AC power. The voltage conversion subcircuit 14 performs voltage conversion (boosting or bucking) on ​​the AC power obtained by the inversion process to obtain voltage-converted AC power. The voltage-converted AC power is filtered by the second filtering subcircuit 15, which fifties the interference signal in the voltage conversion. The AC power filtered and output by the second filtering subcircuit 15 is high-frequency power.

[0037] As shown in FIG. 3, in this embodiment, the rectifier subcircuit 11 is used to receive single-phase input AC power and includes a first diode D1, a second diode D2, a third diode D3, and a fourth diode D4, where the first diode D1, the second diode D2, the third diode D3, and the fourth diode D4 form a bridge rectifier structure for receiving the single-phase input, and the bridge rectifier structure outputs DC power via the bus.

[0038] As shown in FIG. 4 , in this embodiment, the rectifier sub-circuit 11 is used to receive three-phase input AC power, and the rectifier sub-circuit 11 includes a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, and a sixth diode D6, where the first diode D1, the second diode D2, the third diode D3, the fourth diode D4, the fifth diode D5, and the sixth diode D6 form a bridge rectifier structure for receiving the three-phase input, and the bridge rectifier structure outputs DC power via the bus.

[0039] The first filtering subcircuit 12 includes a second inductance L2 and a third capacitance C3, where the second inductance L2 is connected in series between the rectifier subcircuit 11 and the inverter subcircuit 13, and the third capacitance C3 spans both ends of the rectifier subcircuit 11. The second inductance L2 functions as a filtering inductance, and the third capacitance C3 functions as a filtering capacitance. The combination of the second inductance L2 and the third capacitance C3 constitutes a composite filtering structure.

[0040] The inverter sub-circuit 13 includes a first switch transistor Q1, a second switch transistor Q2, a third switch transistor Q3, and a fourth switch transistor Q4, which form an H-bridge inverter structure.

[0041] The voltage conversion subcircuit 14 includes a transformer T1 and a fourth capacitor C4, one end of the input side of the transformer T1 is connected to the first switch transistor Q1 and the second switch transistor Q2 via the fourth capacitor C4, the other end of the input side of the transformer T1 is connected to the third switch transistor Q3 and the fourth switch transistor Q4, and the output side of the transformer T1 is connected to the second filtering subcircuit 15.

[0042] The second filtering sub-circuit 15 includes a third inductance L3 and a fifth capacitance C5, where the third inductance L3 is connected in series between the output side of the transformer T1 and the switching circuit 2, and the fifth capacitance C5 spans across the output side of the transformer T1, where the third inductance L3 functions as a filtering inductance and the fifth capacitance C5 functions as a filtering capacitance, and the combination of the third inductance L3 and the fifth capacitance C5 constitutes a composite filtering structure.

[0043] 5, the high frequency power supply system further includes a power adjusting circuit 4. The power adjusting circuit 4 is connected to the output terminal of the high frequency power generating circuit 1, and is used to collect the high frequency power output by the high frequency power generating circuit 1 and output a first adjusting signal so that the high frequency power generating circuit 1 outputs high frequency power corresponding to the first adjusting signal.

[0044] Specifically, the power adjustment circuit 4 collects the high-frequency power output by the high-frequency power generation circuit 1 and outputs a first adjustment signal based on the value of the high-frequency power; if the value of the high-frequency power is greater than a preset upper power threshold, the power adjustment circuit 4 outputs a first adjustment signal that reduces the high-frequency power; and if the value of the high-frequency power is less than a preset lower power threshold, the power adjustment circuit 4 outputs a first adjustment signal that increases the high-frequency power.

[0045] More specifically, the power adjustment circuit 4 includes a power sensor 41, an analog-to-digital converter 42, and a power adjustment module 43. The power sensor 41 is connected to the output end of the high frequency power generation circuit 1, the analog-to-digital converter 42 is connected to the output end of the power sensor 41, and the power adjustment module 43 is connected to the output end of the analog-to-digital converter 42, and is used to output a corresponding adjustment signal based on the collected high frequency power.

[0046] In actual use, the power sensor 41 collects the power output by the output terminal of the high frequency power generating circuit 1 and obtains collected signals in the form of voltage and current; the analog-to-digital converter 42 obtains the signal collected by the power sensor 41 and performs analog-to-digital conversion of the collected signal to obtain a digital signal; the power adjusting module 43 receives the digital signal and determines the current output high frequency power of the high frequency power generating circuit 1 based on the specific value of the digital signal; and further outputs a corresponding first adjusting signal to the high frequency power generating circuit 1 based on the digital signal, so that the high frequency power generating circuit 1 outputs a high frequency power corresponding to the first adjusting signal.

[0047] More specifically, the power adjustment module 43 is connected to the impedance matching circuit 3 and is used to collect the matched power output by the impedance matching circuit 3 and output a second adjustment signal to conduct the impedance matching branch corresponding to the second adjustment signal.

[0048] In actual use, the power adjustment module 43 sweeps the matching power signal output by the impedance matching circuit 3. The sweeping refers to obtaining the matching power output by the impedance matching circuit 3. The matching power output by the impedance matching circuit 3 is collected through a corresponding sensor, and then the collected signal of the sensor is obtained to obtain the matching power output by the impedance matching circuit 3. The obtained matching power output by the impedance matching circuit 3 is compared with a preset matching power range. If the obtained matching power is not within the matching power range, the power adjustment module 43 outputs a second adjustment signal to control the impedance matching branch to switch the impedance matching branch to conduct until the obtained matching power is within the matching power range. If none of the impedance matching branches can provide impedance matching that meets the requirements, the power adjustment module 43 outputs an alarm signal or controls the impedance matching circuit 3 to stop operating.

[0049] The embodiments of the present application further provide a semiconductor processing apparatus including the above-mentioned high frequency power supply system, and the specific configuration of the high frequency power supply system refers to the above-mentioned embodiments. The semiconductor processing apparatus provided by the embodiments of the present application adopts all the technical solutions of all the above-mentioned embodiments, and therefore has at least all the beneficial effects brought about by the technical solutions of the above-mentioned embodiments, and therefore will not be described in general terms here.

[0050] In summary, in the RF power supply system and semiconductor processing apparatus according to the present embodiment, the RF power output from the RF power generation circuit is received via a switching circuit, and the multi-stage impedance matching circuit is used to output the RF power to the impedance matching circuit in a process environment where the impedance matching amount is constant. Furthermore, impedance matching for the RF power output from the RF power generation circuit is provided via the impedance matching circuit, thereby adapting to process environments where the impedance matching amount varies, reducing the time required for impedance matching between the RF power generation circuit and the reaction chamber, and further improving process efficiency. In a process environment where the impedance matching amount varies greatly, the switching circuit can be provided to shut down the impedance matching circuit, allowing a conventional matcher to be used to perform impedance matching over a wide range, or RF power can be output directly.

[0051] In this application, "at least one" refers to one or more, and "plurality" refers to two or more. "And / or" is used to describe a relationship between related objects and indicates that a three-way relationship may exist. For example, "A and / or B" may refer to three cases: A only exists, B only exists, or both A and B exist simultaneously, and A and B may be singular or plural. The character " / " generally indicates that the related objects before and after it are in an "or" relationship. "At least one of" or similar expressions refers to any combination of these items, including any combination of a single item or multiple items. For example, at least one of a, b, or c may represent a, b, c, "a and b," "a and c," "b and c," or "a, b, and c," where a, b, and c may be singular or plural. The above describes the preferred embodiments of the present invention with reference to the drawings, but the present invention does not limit the scope of the claims of the present invention. Any modifications, equivalent substitutions, and improvements made by those skilled in the art without departing from the scope and essence of the present invention should fall within the scope of the claims of the present invention.

Claims

1. A high frequency power supply system, a high frequency power generating circuit connected to an external AC voltage source and configured to output high frequency power; a switching circuit connected to an output end of the high frequency power generating circuit, having a first output branch and a second output branch, and capable of outputting the high frequency power output by the high frequency power generating circuit via the first output branch or the second output branch; an impedance matching circuit having at least two sets of impedance matching branches for providing impedance matching of the high frequency power output to the high frequency power generating circuit, wherein each of the impedance matching branches is connected to an output end of the first output branch, and the impedance values ​​of the impedance matching branches are different from each other; A high frequency power supply system.

2. The impedance matching circuit includes: a resonant sub-circuit; a multi-stage inductance having at least two sets of impedance coil segments, a first end of one of the impedance coil segments being connected to a second end of another of the impedance coil segments or to a first end of the resonant sub-circuit; a switch device, the number of which is equal to the number of the impedance coil segments, the switch device having a first end connected to the second end of the impedance coil segment and a second end connected to the second end of the resonant sub-circuit; 2. The high frequency power supply system according to claim 1.

3. The switch device selects at least one of a circuit selection device, a relay, a crystal transistor, and a MOS transistor.

3. The high frequency power supply system according to claim 2.

4. the impedance values ​​of each of the impedance matching branches monotonically increase in a predetermined order; 4. The high frequency power supply system according to claim 1, wherein the high frequency power supply system is a power supply system for supplying a high frequency electric power to a power source.

5. The high frequency power generating circuit includes: a rectification subcircuit for receiving external AC power and rectifying it to DC power; a first filtering sub-circuit connected to an output end of the rectifying sub-circuit for filtering the rectified DC power and obtaining a filtered DC power; an inversion subcircuit connected to the output end of the first filtering subcircuit for inverting the filtered DC power into AC power; a voltage conversion subcircuit connected to an output terminal of the inverse conversion subcircuit for performing voltage conversion on the AC power obtained by the inverse conversion; a second filtering subcircuit connected to an output terminal of the voltage conversion subcircuit for filtering the AC power obtained by voltage conversion and obtaining high frequency power; 2. The high frequency power supply system according to claim 1.

6. an input end of the first output branch is connected to an output end of the high frequency power generating circuit, and an output end of the first output branch is connected to an output end of the impedance matching circuit; an input end of the second output branch is connected to an output end of the high frequency power generating circuit, and an output end of the second output branch is used to connect to an external reaction chamber or an external matching box; 2. The high frequency power supply system according to claim 1.

7. further comprising a power adjustment circuit; the power adjustment circuit is connected to the output terminal of the high frequency power generation circuit, and is used to collect the high frequency power output by the high frequency power generation circuit and output a first adjustment signal, so that the high frequency power generation circuit outputs high frequency power corresponding to the first adjustment signal; 2. The high frequency power supply system according to claim 1.

8. The power adjustment circuit a power sensor connected to an output terminal of the high-frequency power generating circuit; an analog-to-digital converter connected to an output terminal of the power sensor; a power adjustment module connected to the output end of the analog-to-digital converter, for outputting a corresponding adjustment signal according to the collected high frequency power; 8. The high frequency power supply system according to claim 7.

9. the power adjustment module is connected to the impedance matching circuit, and is used to collect the matched power output by the impedance matching circuit and output a second adjustment signal to make the impedance matching branch corresponding to the second adjustment signal conductive; 9. The high frequency power supply system according to claim 8.

10. A semiconductor process device comprising the high frequency power supply system according to any one of claims 1 to 9. A semiconductor processing device characterized by:

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