Deposition apparatus, deposition method, method for packaging dies into chip packages

Abstract

A deposition apparatus (1) for depositing a material (Ma, Mb, ..., Mn) onto a target (T) is provided herein. The apparatus is configured to initiate the injection of a portion of the material from the injection position of the donor plate (2) at a point in time when the spatial vector defined between the deposition position (ps) and the injection position (pe) coincides with the movement of the donor plate (2) relative to the target (T). A corresponding deposition method is also provided.

Description

[Technical Field]

[0001] The present invention relates to a deposition apparatus for depositing material onto a target. The present invention further relates to a method for depositing a material onto a target. [Background technology]

[0002] Additive manufacturing of multi-material functional components is an attractive manufacturing method for devices such as electronic equipment and micro-LED displays, as well as for chip packaging. In mass production, controlling the high-speed superposition of multiple layers on a substrate remains a persistent challenge. One promising technology for this application is so-called Impulse Printing (trademark). This technology allows for rapid heating of the surface on which the material to be deposited is placed. During this rapid heating, a portion of the material in contact with the heated surface evaporates, and the resulting vapor pressure pushes the remaining unevaporated portion toward the target to which it will be deposited. [Overview of the project] [Problems that the invention aims to solve]

[0003] Further development of this technology is necessary to enable the efficient deposition of different materials and to form laminates on target surfaces as needed. [Means for solving the problem]

[0004] According to a first aspect of this disclosure, an improved deposition apparatus for depositing material onto a target is provided.

[0005] A second aspect of this disclosure provides an improved method for depositing a material onto a target.

[0006] An improved deposit apparatus according to the first embodiment is defined in claim 1. An embodiment of the improved deposition apparatus comprises a donor plate, a heater facility, a carrier, a displacement unit, a memory unit, and a controller. The donor plate has a first major surface having each donor material zone for the material. The heater facility is provided for locally heating the donor plate. The heater facility is, for example, a resistive heater layer integrated into the donor plate, or a photon radiation source, such as a flash or a laser, irradiating the donor plate or the material present thereon. When a location on the donor plate is heated, a piece of the donor material present at that location on the first major surface is heated to a temperature that causes evaporation of the portion of the piece that is in contact with the major surface. The resulting vapor pressure causes the remainder of the piece to be transferred towards the target. The carrier transports the target such that the target surface faces the first major surface of the donor plate with a gap distance therebetween, whereby the remaining pieces are deposited on the target surface. The displacement unit is configured to displace the carrier and the donor plate relative to each other, for example, by displacing the carrier, or displacing the donor plate, or displacing both. The memory unit is configured to store a deposition plan that specifies a deposition pattern of deposition positions where material portions are deposited on the target surface. The controller is provided for controlling the heater facility and the displacement unit, and is configured to read the deposition plan and perform the following sub-steps for each material portion to be deposited. 1) Determine the ejection position on the donor plate where the material portion to be deposited is present. 2) Determine the speed of the relative movement between the donor plate and the target. 3) Calculate the resulting relative movement that occurs during the time interval in which the ejected material traverses the gap distance, based on the speed and the speed at which the material is ejected. 4) Start the ejection of the material portion from the ejection position on the donor plate when the spatial vector defined between the deposition position (ps) and the ejection position (pe) coincides with the relative movement.

[0007] In some embodiments, one or more of Steps 1, 2, and 3 are performed in advance with respect to a completed deposition plan, after which Step 4 can be performed to implement the deposition plan by injecting a material portion from an injection position of a donor plate at each time point determined in Steps 1, 2, and 3 in advance.

[0008] In other embodiments, Steps 1, 2, and 3 are performed in situ. That is, when a material portion is being deposited in Step 4, Steps 1, 2, and 3 are performed for subsequent deposition of the material portion.

[0009] Even other hybrid approaches are possible, where calculations are performed partly in advance and partly while depositing. For example, an expected velocity at which a material portion is to be injected can be calculated in advance and stored as an input value for a calculation step. As another example, all of Steps 1, 2, and 3 are performed in advance with respect to a completed deposition plan, but in addition during deposition, the calculation results are fine-tuned to account for a measured deviation in relative movement.

[0010] An improved deposition method according to a second aspect includes the following steps. A deposition plan is prepared that specifies a pattern of deposition positions where material portions of a material are to be deposited on a target surface of a target. A donor plate having a first major surface covered with the material to be deposited is prepared. The first major surface of the donor plate may be divided into respective zones for each of the materials for which portions are to be deposited. Alternatively, the first major surface of the donor plate may comprise one zone having a plurality of material species that can be of different compositions from one another. If the donor plate has a predetermined division for the material to be deposited, it can be provided prior to the deposition plan. Thereafter, the target and the donor plate are moved relative to each other such that the target surface of the target faces the first major surface of the donor plate with a gap distance therebetween. While the donor plate and target are moving relative to each other, an area of ​​the donor plate is rapidly heated to eject the material present in the zone of the first main surface toward the target surface. In one example, the zone is uniformly covered with a single material. For example, the first main surface is divided into sections, each covered with its own material, and the heated zone is part of one of these sections. Rapid heating of the donor plate ejects the material present in that zone. Alternatively or additionally, the zone of the first main surface of the rapidly heated donor plate may be provided with multiple distinct material species, which may have different material compositions. Rapid heating of the zone ejects the distinct material species simultaneously. In one embodiment, rapid heating of the donor plate is achieved by resistance heating. In another embodiment, rapid heating is achieved by irradiation with photon emission, such as a laser beam or flash. For this purpose, the donor plate may be provided with a photon emission absorbing layer. Alternatively, rapid heating may be achieved by the absorption of photon radiation by the material to be deposited.

[0011] In this procedure, the position from which the material is injected is determined as follows, by rapidly heating it as a function of time while performing the relative movement described above. For each part of the material to be deposited, follow these substeps: A substep to determine the injection position of the donor plate containing the material to be deposited; A substep to determine the relative velocity of movement between the donor plate and the target; A substep to calculate the resulting relative movement that occurs during the time interval in which the injected material traverses the gap distance; A substep in which the material portion is injected from the injection position of the donor plate at the point when the spatial vector defined between the deposition position and the injection position coincides with this relative movement. It will take place.

[0012] Typically, the decision-making and calculation steps are performed prior to the actual deposition process. Alternatively, these steps may be performed during the deposition process. For example, calculations may be performed while depositing one or more pattern elements to plan the timing of subsequent material depositions. Feedback calculations may also be performed to fine-tune the injection timing.

[0013] These and other aspects of the present disclosure will be described in more detail with reference to the following drawings. [Brief explanation of the drawing]

[0014] [Figure 1] This diagram schematically shows an overview of one embodiment of an improved sedimentation apparatus. [Figure 2A] This diagram schematically illustrates another embodiment of the improved sedimentation apparatus. [Figure 2B] Figure 2A shows one stage of the deposition process in cross-section BB. [Figure 3] This figure shows an aspect of a further embodiment of the improved depositing apparatus. [Figure 4] This figure shows exemplary products that can be obtained using improved sedimentation equipment. [Figure 5A] This is an explanatory diagram of a method not according to the present invention. [Figure 5B] This is an explanatory diagram of a method not according to the present invention. [Figure 5C] This is an explanatory diagram of a method not according to the present invention. [Figure 6A] This is an explanatory diagram of one embodiment of an improved deposition method. [Figure 6B] This is an explanatory diagram of one embodiment of an improved deposition method. [Figure 6C] This is an explanatory diagram of one embodiment of an improved deposition method. [Figure 7A] This figure shows examples of applications for improved devices and / or methods. [Figure 7B] This figure shows examples of applications for improved devices and / or methods. [Figure 8A] This figure shows examples of applications for improved devices and / or methods. [Figure 8B] This figure shows examples of applications for improved devices and / or methods. [Figure 9A] This is an explanatory diagram of the calibration method. [Figure 9B] This is an explanatory diagram of the calibration method. [Figure 9C] This is an explanatory diagram of the calibration method. [Figure 9D] This is an explanatory diagram of the calibration method. [Figure 10A] This is an explanatory diagram of an alternative calibration method. [Figure 10B] This is an explanatory diagram of an alternative calibration method. [Figure 10C] This is an explanatory diagram of an alternative calibration method. [Figure 11] This diagram provides a schematic overview of the improved deposition method. [Figure 12] This figure shows an exemplary example of the first main surface or a portion thereof of a donor plate on which material to be deposited is provided. [Figure 13] Further application examples are shown in the figure. [Figure 14] This figure shows another application example. [Modes for carrying out the invention]

[0015] Similar reference numerals in various drawings indicate the same element unless otherwise specified.

[0016] Figure 1 shows an overview of one embodiment of an improved deposition apparatus 1 for depositing materials Ma, Mb, ..., Mn onto a target T. As shown in Figure 1, the device 1 comprises a donor plate 2, a heating apparatus 22, a transport body 3, a displacement unit 4, a storage unit 5, and a controller 6.

[0017] The donor plate 2 has a first main surface 21 comprising donor material zones 21a, 21b, ..., 21n for donor materials Ma, Mb, ..., Mn. Preferred donor materials are inks or pastes containing functional agents dissolved in a solvent or suspended in a suspension. The donor materials typically have a viscosity in the range of 10 to 5000 Pa*s, generally in the range of 100 to 1000 Pa*s.

[0018] Functional agents can be any component for a specific purpose in the workpiece provided on the target surface. For example, a suspension of metal particles, such as copper ink, silver ink, or carbon ink, can serve to print conductive elements onto the target surface. Solder is also suitable for this purpose. In one example, solder has a solid content formed by 85±5 wt% of a metal alloy, such as SAC305, 5-15% of an oxide remover, and components to improve printability. Metal complex inks are also suitable for the purpose of forming electrically connected elements. For the purpose of forming electrically or thermally insulating elements, suspensions or solutions of ceramic materials such as silicon dioxide, silicon nitride, titanium dioxide, and aluminum oxide are suitable. Other examples include adhesive inks for forming adhesive elements on a target, such as a component, and underfill materials for forming underfill at the target location.

[0019] The heating device 22 is provided to locally heat the donor plate 2. In the example shown in the figure, the heating device is a resistance heating layer 22 integrated with the donor plate 2 and coupled to the power supply unit 7.

[0020] The transporter 3 is provided for transporting the target T, such that its target surface TS faces the first main surface 21 of the donor plate 2 with a gap distance between them.

[0021] The displacement unit 4 is provided to displace the conveyor 3 together with the target T relative to the donor plate 2. This relative displacement can be achieved by the displacement of the conveyor together with the target T, the displacement of the donor plate 2, or a combination thereof. For example, the displacement unit 4 may be configured to displace the conveyor 3 in a first lateral direction and the donor plate 2 in a second lateral direction that is perpendicular to the first lateral direction. In one embodiment, the displacement unit 4 is further configured to control the gap distance between the target surface TS of the target and the first main surface 21 of the donor plate 2. In some embodiments, the displacement unit 4 is configured to change the relative orientation between the target surface TS of the target and the first main surface 21 of the donor plate 2.

[0022] The memory unit 5 is located at the deposition position p where the material portions of the materials Ma, Mb, ..., Mn are deposited on the target surface TS. s It is provided for storing a sedimentation plan that specifies the pattern. This can be any storage medium such as a hard disk, flash memory, or RAM, from which the sedimentation plan is downloaded from an external data source.

[0023] The controller 6 is provided to control the heater equipment 22 and the displacement unit 4, and is configured to read the deposition plan and perform the following steps for each portion of material to be deposited.

[0024] The controller determines the injection position p of the donor plate 2 where the material to be deposited is located. e To decide.

[0025] The controller controls the relative movement velocity v between donor plate 2 and target T. dt To decide.

[0026] The controller controls speed v dtBased on the injection velocity of the material portion, the resulting relative displacement Δl that occurs during the time interval in which the injected material portion traverses the gap distance dg is calculated. The controller only needs to calculate the injection velocity of the material portion once. The calculated value of the injection velocity can then be used for further calculations. The injection velocity depends on various factors, including the material properties of the donor material such as specific gravity, viscosity, and the evaporation temperature of the solvent used in the donor material, as well as the power density at which the first main surface of the donor plate is heated. The injection velocity also depends on whether the donor material is injected as a lateral portion of the donor layer or as an independent fragment of the material. Furthermore, the injection velocity depends on the thickness of the material piece or the thickness of the layer from which it is injected. Although there are many dependencies, the injection velocity can be easily determined in a calibration step for a predetermined set of conditions, and for deviation conditions, the injection velocity can be estimated by interpolation.

[0027] While donor plate 2 and the target are controlled to move relative to each other, the controller controls the deposition position p s and ejection position p e At the point when the spatial vector defined between the two points coincides with the relative movement, the injection of the material portion from the injection position of the donor plate 2 is initiated. To this end, the controller directs the donor plate injection position p to the heater equipment 22. e This locally heats the donor material piece located at that position on the first main surface, causing it to heat up to a temperature that causes evaporation of the portion of the piece in contact with the main surface. The resulting vapor pressure is then applied to the injection position p e The material portion, consisting of the remaining fragments, is transported toward the target.

[0028] In some embodiments, the deposition pattern not only specifies the deposition positions ps where the material portions of materials Ma, Mb, …, Mn are to be deposited on the target surface TS, but also specifies the order in which the material portions are to be stacked on the target surface TS, and the controller 5 is configured to control the deposition apparatus to perform the deposition in the specified order. This is shown in FIGS. 2A and 2B. FIG. 2A shows the first main surface 21 of an exemplary donor plate 2. FIG. 2B shows one stage of the deposition process. It shows the donor plate 2 on the opposite side of the target T, and the plate is as in the cross-section BB shown in FIG. 2A.

[0029] At the stage shown in FIG. 2B, the deposition device 1 has partially completed the deposition of the laminate at the position indicated by ps on the target surface TS. The layers of the laminate already deposited at the indicated deposition positions include the first layer La of material Ma and the second layer of material Mb. In FIG. 2B, the donor plate 2 is shown moving at a velocity v r in the direction indicated by the arrow.

[0030] The controller determines the resulting relative movement Δl that occurs during the time interval in which the ejected material portion traverses the gap distance d g based on the velocity v [[ID=1?]] r and the velocity v m at which the material portion is ejected, according to the following formula [[ID=?9]]

Equation

[0031] When it is determined that the spatial vector defined between the deposition position p s and the ejection position p e coincides with the relative movement Δl, the controller causes the heater equipment 22 to locally heat the position p e of the donor plate 2 to initiate the ejection of the material portion from that position. After traversing the gap distance dg, the ejected material portion Mn forms a further layer Ln on top of the laminate at the position ps.

[0032] To further improve the accuracy of the deposition, the fact that the rate at which relative displacement occurs varies as a function of time is taken into consideration. This is shown in Figure 3.

[0033] In Figure 3, the vertical axis represents the velocity v of the transporter 3 relative to the donor plate. r The values ​​are shown in m / s units, and the horizontal axis represents the position of the object stage relative to the donor plate p. r The values ​​are shown in millimeters. The dashed curve represents the transverse distance p. r The planned velocity Vd is shown as a function of , and the solid curve represents the actual velocity Va. The white circles indicate the measured position / velocity state. In reality, the actual velocity Va deviates from the planned velocity Vd due to the mechanical behavior of the transporter and the actuators that actuate it.

[0034] In this example, actuator 4 is controlled to move the transporter 3 relative to the donor plate 2 with a constant acceleration up to a target speed of 4 m / s, and to maintain that speed until the transporter 3 reaches a predetermined relative position to the donor plate 2, which in this example is 8 mm. From that position, actuator 4 is controlled to move the transporter 3 further relative to the donor plate 2 with a constant deceleration until it stops.

[0035] In this case, it is assumed that the donor plate has a fixed position. For example, if material M1 is injected from the position of donor plate 2 which is opposite position p1e in the reference frame of the transporter, then due to the relative movement of the transporter 3 and donor plate (2), the material will be on the surface of the target.

number

[0036] Here

number

[0037] Similarly, the relationship between positions p2e and p2s, and the relationship between positions p3e and p3s can be calculated.

[0038] In these calculations, the ejected material is assumed to have a constant velocity v m It can be assumed that the material is moved in this manner. This assumption is possible because the material injection is essentially performed in a pulsed manner.

[0039] speed v m It is calculated as follows:

number

[0040] Here, E k This is the energy used to perform the emission. For example, by supplying pulses of electrical power to the resistance heater layer in the donor plate, or by supplying pulses of optical power to the optical radiance absorption layer in the heater plate.

[0041] Energy Ek is calculated as a function of the heat flux setting and material properties, namely the evaporation temperature, absorption, and intrinsic evaporation energy of the material.

[0042] The mass m is calculated as a function of material density and average layer thickness.

[0043] Figure 4 shows an exemplary product that can be obtained with this improved deposition apparatus. The exemplary product is a component package PCK, for example, as shown in Figure 4, comprising a component CP, for example, a die, on a carrier C1 having conductive tracks C1a, C1b, C1c formed of, for example, copper, and having a contact-enhancing coating made of, for example, Ag or Sn. The component CP is bonded to the carrier C1 by a thermally conductive adhesive C2, such as silver paste in this case, to facilitate heat dissipation between the track C1b and the carrier C1. The electrical contacts Cpa, Cpb of the component are electrically connected to the respective conductive tracks C1a, C1b by electrical conductors C3a, C3b. The component CP and electrical conductors C3a, C3b are insulated from the conductive track C1c by dielectric materials C4a, C4b. The package is formed in a molding material C5.

[0044] In one embodiment, the component package PCK has a material on its first main surface: Bonding / conductivity improving material Ma; Dielectric material Mb; Conductive ink Mc; Using a donor plate having separate donor material zones for each, the following steps are taken to form the donor material.

[0045] During the deposition method, the bonding / conductivity improving material Ma is first deposited in the area of ​​the transport body C1 where the conductive track C1c is located, forming a thermally conductive adhesive C2.

[0046] Next, component CP is also injected from a dedicated material zone on the donor plate. This can also be achieved by impulse printing. That is, the location where component CP is first bonded to the donor plate is heated to a temperature exceeding the threshold temperature of the adhesive on the donor plate, and the resulting vapor pressure injects component CP toward the location of the thermally conductive adhesive C2. Then, dielectric material Mb is injected from the corresponding material zone on the donor plate 2 to form patterns of dielectric materials C4a and C4b. Subsequently, conductive ink Mc is injected from its material zone to form electrical conductors C3a and C3b. During these deposition processes, the carrier C1 is displaced relative to the donor plate in a continuous motion, and the timing of injection is selected taking into account the displacement of the carrier relative to the donor plate while the injected material traverses the deposition gap.

[0047] Following these deposition steps, the component package PCK is formed by molding the thus formed semi-finished product with molding material.

[0048] The rate at which the material is transported may further depend on the size of the material piece being transported. In fact, the transport rate is positively correlated with the size. Larger pieces tend to be transported at a higher rate than smaller pieces. This is shown in Figures 5A, 5B, and 5C, which illustrate the subsequent stages of the pattern of the deposited piece. During the deposition process, the target T is moved at a velocity vdr relative to the deposition plate 2, which is held in a fixed position. Figures 5A–5C show the patterned region 2R of the donor plate and the target region TR of the target, on which the target pattern will be formed, while the target is moved at a velocity Vdr relative to the donor plate.

[0049] Figure 5A shows a first state in which the donor plate has a patterned region 2R on its first main surface, where the donor pattern of donor pattern elements is provided. All donor pattern elements may be formed from the same material, but alternatively, they may be made of donor pattern elements of different materials.

[0050] In this example, a pattern of material species must be deposited on a moving target at target positions Tm1, Tm2, ​​..., Tm6 in a single process step. Figures 5A-5C show embodiments not according to the present invention, where, as shown in Figure 5A, this is attempted to be achieved using a donor plate 2 having material species Pm1, Pm2, ..., Pm6 positioned laterally to each other, corresponding to the relative positions of each target position. As the target T moves relative to the donor plate 2 at a velocity vdr, as shown in Figure 5B, the donor plate is heated locally in areas where material species Pm1, Pm2, ..., Pm6 are located. However, converting thermal energy into kinetic energy is relatively less efficient for smaller species than for larger species. This is because, in the case of smaller species, a relatively larger amount of vapor escapes at the interface boundary between the species and the donor plate surface 21. As a result, after the heating step, the smaller species have a relatively lower transport velocity in the direction toward the target T compared to larger species. Therefore, as shown in Figure 5C, the patterns of deposited material species Dm1, Dm2, ..., Dm6 formed after the completion of the deposition step deviate from the species patterns on donor plate 2.

[0051] In the embodiments of the present invention shown in Figures 6A to 6C, this is avoided. For this purpose, a pattern compensation step is performed prior to the deposition step. For each material species in the pattern, the relative displacement of the target T that occurs when that material species is transported toward the target surface is calculated, and the corresponding position on the donor plate 2 is calculated, starting from various desired positions on the target. Therefore, if material species Pmj is to be deposited at position Tmj, the position(Pmj) of this type on the plate is:

number

[0052] This ensures that even if different material types are injected at the same time, they arrive at their respective designated positions within the formed pattern, despite having different transport times. This procedure is also applicable when the transport times differ due to the different material properties of the material types deposited in a single deposition step.

[0053] Figures 7A, 7B and 8A, 8B illustrate further application examples. Figure 7A shows the main surface 21 of the donor plate 2. As shown in Figure 7A, in this example, the donor plate 2 comprises a plurality of material zones {A1, ..., A12; ..., L1, ..., L12} arranged as a grid having rows A to L and columns 1 to 12, each independently heatable. Figure 7B shows the donor plate 2 in cross-section by BB of Figure 7A, with its main surface 21 positioned opposite the target surface TS of the target T. As shown in Figure 7B, in this example, each of the material zones A1, ..., L12 is controlled by its respective controllable resistance heater element, for example, heater element 22 for material zone A1. A1 , and heater element 22 for material zone A12 A12 It has. However, alternatively, each material zone may be heated by a controllable laser beam. Each zone may have its own piece of material to be deposited. The material present in each zone is M xy This is expressed as follows, where x and y are the row and column of the zone, respectively. In this example, all zones in rows A to D contain the first type of material, all zones in rows E to H contain the second type of material, and all zones in rows I to L contain the third type of material. For example, as shown in Figure 7B, material zone A1 contains material M A1 Equipped with seeds, material zone A12 is material M A12 It contains seeds. The size of the seeds on donor plate 2 decreases gradually with column indices 1-6, and then increases again gradually from column indices 7-12.

[0054] In Figure 8A, the meandering arrow P T This is the position p on target T. s This shows the path through which the material is moved relative to the donor plate 2. At the appropriate time, each material zone is heated to transfer the material from that material zone to the target T, and as shown in Figure 8B, the injected material piece is moved to a predetermined position p on the target surface. s The formation of a laminate is achieved. As shown, material M A1 The seed is located at position p s Before it is moved below target zone A1, at point t A1 Material M is injected from material zone A1, thereby... A1 The seeds are located at position p on the target surface. s It is deposited so as to be centered relative to it. Similarly, material M E1 The seed is at point t before position ps is moved below target zone E1. E1 The material is injected from material zone E1, thereby the injected material M E1 The seeds are already deposited in material M A1 It is deposited so that the center is placed on top of the seeds. Similarly, material M I1 The seeds are injected from material zone I1 in a timely manner. Then, this procedure continues at time t A2 Then, from material zone A2, smaller seeds M A2 It shoots out, Seed M A2 is type M I1 The procedure involves landing on the sedimentary layer of species M. A12 This process continues until it is deposited as the final layer of the laminate.

[0055] Subsequently, a second laminate can be constructed by depositing the material species in material zones B, F, and J; a third laminate can be constructed with the material species in material zones C, G, and K; and a fourth laminate can be constructed with the material species in material zones D, H, and L. Furthermore, other types of laminates can be obtained by selecting the corresponding material zones and corresponding injection times. For example, if a laminate with all layers of the same size is desired, the movement of the target T is performed in the forward and backward direction along a single column having the desired size of material species, resulting in a laminate position p s It is controlled to move together with the others. For example, if the selected row is 4, then material types from zones A4, E4, I4, B4, F4, J4, C4, G4, K4, D4, H4, and J4 are injected at each point in time so that the injected material types are deposited at the stacking position ps.

[0056] In the application described with reference to Figures 7A, 7B, 8A, and 8B, the material zone has a fixed size, while the material species have different sizes. In this case, the relatively smaller species have a relatively higher transfer rate compared to the larger species for a given power density. This can be explained by the fact that if the material species completely covers the material zone, the power density at which the species is heated is approximately the same as the power density of the material zone. However, if the species covers only a small portion of the material zone, the power induced in the portion of the material zone outside the portion covered by the species flows partially into the portion covered by the species. This results in a somewhat higher power density in the latter portion.

[0057] Figures 9A to 9D illustrate a measurement method for determining the transfer speed of material species M1, ..., M6 according to the size of the material species. Furthermore, it is possible to determine the dependence of other characteristics of the species, such as the material from which the species is composed, the shape of the material species, etc. Firstly, as shown in Figure 9A, a first set of material species M1, ..., M6 having different sizes Ds are injected with the target stationary on the opposite side of the donor plate 2. Secondly, as shown in Figure 9B, the target T moves at a constant relative velocity v with respect to the donor plate (2).r So, a certain print gap d g With space remaining, a second set of material types M1', ..., M6' is injected. In this second step, when the previously deposited material types M1, ..., M6 are on the exact opposite side of the material types M1', ..., M6' that are about to be injected, the heater elements are activated simultaneously. Then, as shown in Figure 9C, the distance D between the deposit position of each injected material type M1', ..., M6' and the previously deposited material types M1, ..., M6 is determined. k This is measured.

[0058] And the transfer speed v of a specific material type Mk mk teeth,

number

[0059] This allows the transfer speed v to be expressed as a function of the size of the piece and the power density to which heat is supplied to the material zone. m The dependence of can be determined. As shown in Figure 9D, a continuously decreasing relationship can be assumed for the transport velocity as a function of the seed size Ds. This means that it is sufficient to perform measurements for a limited number of sizes, and the transport velocity of seeds of deviant sizes can be estimated by interpolation. Furthermore, a continuously increasing relationship can be assumed for the transport velocity as a function of the power density. Therefore, similarly, it is sufficient to perform measurements for a limited number of power density values, and the transport velocity corresponding to intermediate power densities can be estimated by interpolation. In this case, it should be noted that the material species are assumed to be provided in a laterally symmetrical shape. The measurements can be similarly applied to other shapes.

[0060] Figures 10A, 10B, and 10C illustrate an alternative method for measuring the transfer rate as a function of the power density at which the material zone containing the piece is heated, and the properties of the piece being transferred, such as its size and the type of material it is composed of.

[0061] Similarly, in this method, the donor plate 2 comprises multiple material species M1a, M1b, ..., M1n; M2a, M2b, ..., M2n in each locally heatable material zone. For example, M1a, M1b, ..., M1n are different sized species of the first material M1, and M2a, M2b, ..., M2n are different sized species of the second material M2.

[0062] Donor plate 2 is made of a type of material, for example M1a, with a gap distance d g It is positioned in front of the detector DT, which emits a detection pulse Sdet (see Figure 10C) when the object crosses the object. Figure 10A shows the measurement configuration at time Ttr when the crossing of species M1a is detected. Figure 10B shows the measurement configuration at a subsequent time. When the detection pulse Sdet is emitted, the transport speed v m teeth

number

[0063] Here, Ttr is the time when the seed is ejected. The ejected material is collected in the gutter GT. In the example shown in the figure, the detector DT is a laser (LS) / sensor (SN) combination. Alternative examples include capacitive and inductive sensors.

[0064] Figure 11 schematically illustrates a deposition method for depositing material. The method includes step S1 of preparing a deposition plan that specifies a pattern of deposition locations ps in which material pieces are deposited on a target. The deposition plan may specify each location in which a piece is deposited directly on the target surface TS. However, the deposition plan may also specify longitudinal positions, i.e., the order in which two or more pieces are stacked on the target surface TS.

[0065] In step S2, a donor plate 2 is prepared having a first main surface 21 covered with the material to which the piece will be deposited. The material may be supplied to a material area from which the piece is injected by locally heating a portion of the material area. Alternatively, the pieces to be injected are supplied separately from each other. In some examples, multiple separate pieces within a single pattern area, for example, pieces of different materials, are injected simultaneously by heating the pattern area.

[0066] During operation, while the target surface TS of the target T faces the first main surface 21 of the donor plate 2 with a gap distance dg between them, the target and the donor plate are displaced relative to each other in a controllable manner, as shown in step S3.

[0067] In step S4, which takes place while the target and the donor plate are displaced in a controllable manner relative to each other, the heater equipment 22 is operated in a controllable manner for each piece to be deposited according to the deposition plan. The heater equipment is operated in a controllable manner to eject the piece from the injection position pe of the donor plate 2 at the point in time when the spatial vector defined between the deposition position ps and the injection position pe specified for that piece coincides with the relative movement Δl resulting from the controllable displacement of the target and the donor plate during the time interval in which the injected piece traverses the gap distance dg.

[0068] As described above, in some examples, multiple distinct material species may be supplied to a common, controllably heated zone on the first main surface of a donor plate. This suggests that the material species are injected simultaneously. However, in practice, the material species may be injected at different rates depending on their size and / or material properties. As a result, the pattern in which the species are deposited on the target surface will differ from the pattern in which the species are supplied to the common, controllably heated zone. In one embodiment, this improved method includes a donor plate preparation step in which the positions of each of the distinct material species on the donor plate are calculated based on the pattern of deposition locations ps to be deposited on the target surface TS of the target T and the expected transport rates of each of the injected species. The expected transport rates of the species can be predicted based on data regarding their properties, such as size, shape, and material properties. One method involves simulating the transport of species with the same properties to determine the expected transport rates. Another method involves experimentally determining the expected transport rates using test samples. In addition, the expected transport rates may be predicted based on interpolation of transport rate estimates obtained by simulation or experiment. During transport, deformation of the seeds may occur, resulting in the deposited seeds having a different shape than their original shape on the donor plate. Simulation or test procedures can determine which seed shape on the donor plate best approximates the desired shape of the transported seeds. In this case, too, the results of the simulation or test procedures can be interpolated.

[0069] Alternatively, it should be noted that the injection time may be delayed relative to the time when the heating pulse is supplied by providing a thermal buffer layer between the first main surface and the injected seed. As a result of this thermal buffer layer, the transfer of heat to the seed is delayed, thereby compensating for the relatively high transfer rate of the seed. The thermal buffer layer is a thin layer of insulating material, for example, a ceramic layer (e.g., SiO2 or TiO2) with a thickness of about 0.1 to 10 microns. Donor plate preparation eliminates the need for a thermal buffer layer pattern to compensate for the difference in transfer rates. Nevertheless, a combination of these methods—adjusting the deposition location in the donor plate preparation step and compensating for the transfer rate by providing a thermal buffer layer element—may be considered.

[0070] Figure 12 shows an exemplary example of the first main surface or a portion thereof of a donor plate on which the material to be deposited is provided.

[0071] Example a) shows the surface of a donor plate with stripes of copper ink, for example, a suspension of copper particles in a suspension agent. The stripes are approximately 150 microns wide and approximately 2 mm long. In this example, the heating equipment comprises a plurality of individually addressable resistance heating layer elements 22a1, 22a2, 22a3, ... provided in a resistance heating layer beneath the first main surface of the donor plate. Each individually addressable resistance heating layer element is provided beneath its respective stripe. This allows the selected stripes of copper ink to be individually injected toward the target by resistively heating the corresponding resistance heating layer element with pulses of power during operation. Alternatively, it is also possible to eject two or more or all of the stripes by resistively heating the corresponding resistance heating layer elements simultaneously.

[0072] Example b) shows a donor plate surface provided with stripes of silver ink, for example, a suspension of silver particles in a suspension. In this example, the heater equipment comprises a plurality of individually addressable resistance heater layer elements 22b1, ..., 22bn provided in a resistance heater layer beneath the first main surface of the donor plate. The resistance heater layer elements 22b1, ..., 22bn are tile-shaped with a size of approximately 150 × 150 microns. Each stripe has a corresponding subset of individually addressable resistance heater layer elements.

[0073] This allows a selected resistance heating element to be resistively heated with a pulse of power, causing a silver ink fragment from the corresponding surface area of ​​the donor plate to be ejected towards the target. Alternatively, two or more fragments can be ejected simultaneously by resistively heating the corresponding resistance heating elements at the same time.

[0074] Example c) shows a donor plate surface provided with stripes of dielectric ink, a suspension in a suspension of particles of a dielectric material, such as ceramic material such as SiO2 or TiO2. In this example, the heater equipment comprises a plurality of individually addressable resistance heater layer elements, which include linear resistance heater elements 22c1-3 and tile-shaped resistance heater elements 22c4-m, provided in the resistance heater layer beneath the first main surface of the donor plate. This makes it possible to extrude one or more individual lines of dielectric ink as described in a), for example, and / or one or more parts of dielectric ink as described in b), for example.

[0075] Example d) shows a donor plate surface with stripes of carbon ink, for example, a suspension of carbon particles in a suspension agent. The donor plate may have heating equipment as specified, for example, in a), b), or c). It should be noted that in any example of a donor plate, any type of donor material may be provided with any implementation of heating equipment.

[0076] Example e) shows a donor plate surface provided with separate pieces of carbon ink solder, for example, solder based on SAC305 as specified above. In this example, the heating equipment comprises a common addressable resistance heating layer element 22e provided in a resistance heating layer beneath an area of ​​the first main surface of the donor plate on which the solder pieces are provided. When the resistance heating layer element 22e is resistively heated with a pulse of power, the solder pieces in that area are simultaneously ejected toward the target.

[0077] Example f) shows a donor plate surface provided with separate pieces of an adhesive material containing a conductive adhesive, e.g., conductive particles, e.g., metal particles. The heating equipment comprises individually addressable resistance heating layer elements 22f1, ..., 22f6, each provided in a resistance heating layer beneath each sub-area where the conductive adhesive pieces are provided. When a selected of the individually addressable resistance heating layer elements 22f1, ..., 22f6 is resistively heated with a pulse of power, the conductive adhesive pieces of the corresponding sub-area are ejected toward the target. Alternatively, by simultaneously providing pulses of power to the associated individually addressable resistance heating layer elements, it is possible to eject two or more or all of the conductive adhesive pieces simultaneously.

[0078] Example g) shows a donor plate surface on which separate pieces of die-attachment material are provided, such as an adhesive material that is electrically insulating but has good thermal conductivity. In this example, the heating equipment includes a common addressable resistance heating element 22g1 provided in the resistance heating layer below the area of ​​the first main surface of the donor plate on which the four pieces of die-attachment material are provided. The heating equipment also includes individually addressable resistance heating elements 22g2, 22g3 provided in the resistance heating layer below each sub-area on which a single piece of die-attachment material is provided. This makes it possible to simultaneously eject the four die-attachment pieces by providing a power pulse to the common addressable resistance heating element 22g1. Alternatively, the die-attachment pieces can be ejected individually by providing a power pulse to a selected individual among the individually addressable resistance heating elements 22g2, 22g3. Another option is to simultaneously provide power pulses to two or more of the commonly addressable resistor heater layer element 22g1 and the individually addressable resistor heater layer elements 22g2, 22g3.

[0079] Example h) shows a donor plate surface with separate sections of underfill material such as Henkel EP3RRLV. Regardless of the donor material provided on the first main surface of the donor plate, the heater equipment may be mounted in various ways as shown in examples e) to g).

[0080] It should be noted that the donor plate may have sub-areas depending on two or more, or all, of the combinations of examples a) to h).

[0081] Figure 13 shows an example where the target surface TS is a region including the edge of a glass plate T and the surrounding bottom and top surfaces. Using the donor plate shown in Example a) of Figure 12, a stripe of copper ink was deposited on the edge. Upon contact with the edge surface, the copper ink stripe bent across the bottom and top surfaces. This process was repeated to form electrical conductors M1, M2, M3, and M4, which form electrical connections between the electronic circuits on the bottom and top surfaces, respectively. Each of the electrical conductors M1, M2, M3, and M4 is formed as a laminate of copper ink stripes.

[0082] Figure 14 shows an application example where the target T is a carrier having multiple components C1, ..., Cm to be wire-bonded. This is achieved using a donor plate 2 having multiple wire patterns W1, ..., Wn, each wire pattern consisting of a pattern of conductive ink lines, each provided in a sub-area having individually addressable resistance heater layer elements 22-1, ..., 22-n. As shown in the right-hand portion of Figure 14, the components C1, ..., Cm to be wire-bonded are not all perfectly aligned. For example, component Ck is clearly out of alignment. In an exemplary embodiment of the improved deposition device, a displacement unit 4 for displacing the carrier and the donor plate relative to each other is further configured to dynamically change the orientation of the donor plate 2 relative to the target T about a rotation axis transverse to the main surface of the donor plate. During operation, the controller dynamically adjusts the orientation of the donor plate 2 relative to the target T according to the orientation of the components to which the line patterns are to be deposited. This makes it possible to provide aligned wire bonds to components even if the components are not aligned on the carrier. In one embodiment of this method, the components to be wire-bonded are first grouped into alignment sets, each alignment set containing components having substantially the same misalignment. For each alignment set, the wire bonding process is performed using a common orientation of the donor plate 2 relative to the target T, according to the average misalignment of the components in that alignment set. This makes the wire bonding process very efficient, even if there are misaligned components on the carrier.

[0083] In the claims, the phrase “~ comprising” does not exclude other elements or steps, and the indefinite article “a” or “an” does not exclude plurals. A single component or other unit may accomplish the functions of several items described in the claims. The mere fact that certain means are described in different claims does not mean that combinations of those means cannot be used advantageously. Reference numerals in the claims should not be construed as limiting the scope.

Claims

1. A deposition apparatus (1) for depositing materials (Ma, Mb, ..., Mn) on a target (T), A donor plate (2) having a first main surface (21) covered with each of the materials (Ma, Mb, ..., Mn) in each material zone (21a, 21b, ..., 21n), A heating device (22) for locally heating the area of ​​the first main surface (21) in order to inject the material present in that area toward the target, With the target surface (TS) facing the first main surface (21) of the donor plate (2) with a gap distance (dg), a transporter (3) for transporting the target (T) is provided. A displacement unit (4) for displacing the transporter and the donor plate relative to each other, The material portion of the aforementioned material (Ma, Mb, ..., Mn) is deposited on the target surface (TS) at the deposition position (p ｓ A memory unit (5) for storing a sedimentation plan that specifies the pattern of ) The system includes a controller (6) for controlling the heating equipment (22) and the displacement unit (4), and the controller (6) After reviewing the aforementioned deposition plan, For each portion of the material to be deposited, follow these steps: The injection position (p ｅ ) and The relative lateral movement velocity (v) between the donor plate (2) and the target (T) ｄｔ ) and The resulting relative lateral movement (Δl) that occurs during the time interval in which the injected material portion traverses the gap distance (dg) is defined as the velocity (v ｄｔ ) and the velocity at which the material portion is injected (v ｍ Based on the following formula [Math 1] The steps to be calculated by, The deposition position (p ｓ ) and the injection position (p ｅ A deposition apparatus configured to perform the steps of: initiating the injection of the material portion from the injection position of the donor plate (2) at the point in time when the spatial vector defined between ) coincides with the relative lateral movement, wherein the heating equipment (22) is configured to locally heat a region of the donor plate comprising a plurality of distinct material species, wherein the distinct material species comprises at least two species of materials that are different from each other, and / or comprises at least two species of materials that are different from each other in size and / or shape.

2. The deposition apparatus according to claim 1, wherein the heating equipment (22) is configured to locally heat a region of the donor plate that is part of a larger region having a homogeneous layer of a single material.

3. The deposition apparatus according to claim 1, wherein the pattern further specifies the order in which the material portions are stacked on the target surface (TS), and the controller (6) is configured to control the deposition apparatus so that deposition is performed in the order specified.

4. The deposition apparatus according to any one of claims 1 to 3, wherein the heating equipment comprises a resistance heating layer (22) divided into individually controllable resistance heating layer sections, and a power source (7) controlled by the controller (6) to supply power to a selected resistance heating layer section.

5. The deposition apparatus according to any one of claims 1 to 4, wherein the heating equipment comprises a photon emission source controlled by the controller to direct a ray of photon emission to a selected position on the donor plate.

6. A deposition apparatus according to any one of claims 1 to 5, configured to simultaneously heat regions of the donor plate having one or more patterns of the materials to be deposited (Ma, Mb, ..., Mn).

7. A deposition method for depositing materials (Ma, Mb, ..., Mn) on a target (T), Step (S1) of preparing a deposition plan that specifies the pattern of deposition locations (ps) in which pieces of the material (Ma, Mb, ..., Mn) are deposited on the target (T), Step (S2) is to prepare a donor plate (2) having a first main surface (21) covered with the aforementioned material, Step (S3) of controllingly displacing the target and the donor plate relative to each other while the target surface (TS) of the target (T) is facing the first main surface (21) of the donor plate (2) with a gap distance (dg) between them, The method includes, while displacing in a controllable manner, for each piece to be deposited according to the deposition plan, controlling the heater equipment (22) to inject the piece from the injection position (pe) at a time when a spatial vector defined between the deposition position (ps) designated for the piece and the injection position (pe) of the donor plate (2) coincides with the lateral movement (Δl) that occurs during the time interval in which the injected piece traverses the gap distance (dg), wherein, according to the first option, the donor plate (2) is provided with a plurality of distinct material types in the donor plate zone, the plurality of distinct materials are injected simultaneously by heating the donor plate zone, and the deposition method is such that the donor plate The donor plate preparation step includes a preparation step, in which the position and / or shape of each of the distinct material species on the donor plate is calculated based on the shape of the pattern and / or material species at the deposition location (ps) to be deposited on the target surface (TS) of the target (T), and the expected transport rate of each of the injected species predicted according to the size and / or shape and / or material properties of the species, or, if a second option is followed, the deposition plan includes a target pattern having two or more target pattern elements to be formed by depositing one or more of the materials (Ma, Mb, ..., Mn) on the target surface, and the deposition method is A step of preparing a donor plate (2) having a patterned region (2R) on its first main surface (21) with donor patterns of donor pattern elements, wherein each donor pattern element corresponds to each of the target pattern elements and includes the material of the corresponding target pattern element to be formed. The step includes moving the donor plate (2) and the target (T) relative to each other, integrally heating the patterned region of the donor plate to simultaneously inject the donor pattern elements onto the target surface, thereby forming each of the target pattern elements of the target, A deposition method comprising preparing the donor plate (2), which includes determining the position of each donor pattern element in the donor pattern according to the position of each target pattern element in the target pattern to be formed, and the expected transport time of each donor pattern element to the target surface, which depends on the material that constitutes the donor pattern element and the size of the donor pattern element.

8. The deposition method according to claim 7, comprising dynamically changing the orientation of the donor plate (2) relative to the target (T) about a rotation axis transverse to the first main surface (21) of the donor plate (2), thereby adapting the orientation of the donor plate (2) relative to the target (T) according to the orientation of the component (Ck) on which a wire pattern is to be deposited for wire bonding.

9. A method for packaging a die (CP) into a chip package (PCK), The steps include printing a bonding / conductivity improving material (C2) onto a carrier (C1), The steps include placing the die (CP) on the printed bonding / conductivity improving material (C2), The steps include printing dielectric material (C4a, C4b) on the side of the die and on the gap between the electrical contacts (Cpa, Cpb) of the die and the respective external electrical contacts (C1a, C1b) that will be electrically connected to the electrical contacts of the die, The steps include printing conductive inks (C3a, C3b) onto the dielectric material in order to electrically connect the electrical contacts of the die to the respective external electrical contacts, The steps include printing a mold compound (C5) to form an encapsulation of the die with the mold compound and the carrier, thereby forming the chip package (PCK), Includes, A method wherein one or more of the printing steps are performed using the deposition method described in claim 7.

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